Solar cell modification material, solar cell, preparation method and electric equipment

Abstract

The invention discloses a solar cell modification material, a solar cell, a preparation method of the solar cell, a photovoltaic module and electric equipment. The solar cell modification material comprises camphor sulfonate, and anions of the camphor sulfonate comprise at least one of camphor sulfonic acid groups and camphor derivative sulfonic acid groups. The camphor sulfonic group of camphor sulfonate and / or the camphor derivative sulfonic group act on the anion vacancy defect of perovskite, so that the modification of the perovskite interface is realized, the non-radiative recombination caused by the defect is improved, the open-circuit voltage and fill factor of the solar cell are improved, and the stability of the solar cell is improved. And ion migration in the perovskite solar cell is also improved.

Description

Technical Field

[0001] The present application relates to the technical field of batteries, and particularly to a solar cell modification material, a solar cell and its preparation method, a photovoltaic module, and an electrical device. Background Art

[0002] Developing new energy materials and devices meets the current development needs and can effectively solve the environmental problems caused by the use of fossil fuels.

[0003] Solar cells have received extensive attention due to their characteristics of directly converting sunlight into electrical energy without causing environmental pollution, and can be applied to various fields, including military, aerospace, industrial, commercial, agricultural, and communication fields.

[0004] Defects on the surface and interface of the light absorption layer of solar cells affect the performance of solar cells. Summary of the Invention

[0005] The present application provides a solar cell modification material, a solar cell and its preparation method, a photovoltaic module, and an electrical device, which passivate the defects of the light absorption layer of the solar cell and improve the performance of the solar cell.

[0006] To solve the above technical problems, one technical solution adopted by the present application is: to provide a solar cell modification material, including camphorsulfonate, and the anion of the camphorsulfonate includes at least one of camphorsulfonic acid group and camphor derivative sulfonic acid group.

[0007] When the material of the light absorption layer of the solar cell includes perovskite, the camphorsulfonic acid group and / or camphor derivative sulfonic acid group of the camphorsulfonate act on the anion vacancy defects of perovskite (when the perovskite material includes halide perovskite, the anion vacancy defect can be a halogen vacancy defect, such as iodine vacancy defect), realizing the modification of the perovskite interface, improving the non-radiative recombination caused by defects, increasing the open circuit voltage and fill factor of the solar cell, improving the stability of the solar cell, and also improving the ion migration in the perovskite solar cell. The structure of the camphorsulfonic acid group and / or camphor derivative sulfonic acid group of the camphorsulfonate is relatively stable and has hydrophobicity, which can improve the humidity stability of the perovskite material.

[0008] Compared with using ammonium halide salts to passivate perovskite, the embodiments of the present application use camphorsulfonate to passivate perovskite, which can improve the halogen ion migration phenomenon, and further improve the photo-electrical instability of the perovskite solar cell caused by halogen ion migration.

[0009] In one embodiment, the cation structural formula of the camphorsulfonate is R1, R2, and R3 are each independently selected from at least one of a substituted or unsubstituted alkane group, a substituted or unsubstituted aromatic group, and a hydrogen atom, and at most two of R1, R2, and R3 are hydrogen atoms. The cations of the camphorsulfonate passivate the cation vacancy defects of the perovskite, improving the non-radiative recombination caused by the defects. The cations of the camphorsulfonate are hydrophobic, which can improve the humidity stability of the perovskite material.

[0010] In one embodiment, R1, R2, and R3 are each independently selected from at least one of a C1-C10 substituted or unsubstituted alkane group and a C6-C10 substituted or unsubstituted aromatic group, such that the molecular weight of the R group is appropriate, the steric effect of the cation of the camphorsulfonate is small, and the binding force between the cation of the camphorsulfonate and the cation vacancy defect of the perovskite is strong, achieving a better passivation effect.

[0011] In one embodiment, the alkane group includes at least one of a branched alkane group and a straight-chain alkane group; and / or, the aromatic group includes at least one of a phenyl group, an alkyl-substituted phenyl group, and a heteroatom-substituted aromatic group, achieving a better passivation effect on the cation vacancy defects of the perovskite.

[0012] In one embodiment, the solar cell modifying material includes at least one of phenformin camphorsulfonate, n-octylammonium camphorsulfonate, n-hexylammonium camphorsulfonate, and phenylpropylammonium camphorsulfonate. The camphorsulfonic acid group acts on the anion vacancy defects of the perovskite, and the amine-containing alkane group or aromatic group acts on the cation vacancy defects of the perovskite, achieving passivation of the perovskite and suppressing non-radiative recombination.

[0013] To solve the above technical problems, another technical solution adopted by this application is: to provide a solar cell, including the solar cell modifying material described in any one of the above, which can modify the defects of the light absorption layer of the solar cell, improve the non-radiative recombination caused by the defects, increase the open-circuit voltage and fill factor of the solar cell, and improve the stability of the solar cell.

[0014] In one embodiment, the solar cell includes a first electrode layer, a first transport layer, a light absorption layer, a second transport layer, and a second electrode layer stacked in sequence; the solar cell further includes an interface modification layer, the interface modification layer is disposed on the surface of the light absorption layer facing the first transport layer side, and / or the interface modification layer is disposed on the surface of the light absorption layer facing the second transport layer side, and the interface modification layer includes the solar cell modifying material.

[0015] When the material of the light absorption layer includes a halide perovskite material, by forming a solar cell modifying material on the surface of the perovskite in the light absorption layer facing the first transport layer and / or the surface facing the second transport layer, the camphorsulfonic acid group of the camphorsulfonate acts on the halogen vacancy defects of the perovskite, and the cationic amine group of the camphorsulfonate acts on the cation vacancy defects of the perovskite, realizing the interface modification of the perovskite, improving the non-radiative recombination caused by defects, inhibiting the ion migration in the solar cell, improving the stability of the solar cell, and at the same time, the hydrophobicity of the camphorsulfonate can improve the humidity stability of the solar cell.

[0016] In one embodiment, the solar cell is a normal structure, and the solar cell includes a first electrode layer, a first transport layer, a light absorption layer, an interface modification layer, a second transport layer, and a second electrode layer that are sequentially stacked. The first transport layer is an electron transport layer, the second transport layer is a hole transport layer, the light absorption layer is a perovskite layer, and the interface modification layer includes the solar cell modifying material. By forming an interface modification layer between the hole transport layer and the perovskite layer, the camphorsulfonic acid group of the camphorsulfonate acts on the halogen vacancy defects of the perovskite, and the cationic amine group of the camphorsulfonate acts on the cation vacancy defects of the perovskite, realizing the interface modification of the perovskite, improving the non-radiative recombination caused by defects, inhibiting the ion migration in the solar cell, improving the stability of the solar cell, and at the same time, the hydrophobicity of the camphorsulfonate can improve the humidity stability of the solar cell.

[0017] In one embodiment, the solar cell is a reverse structure, and the solar cell includes a first electrode layer, a first transport layer, an interface modification layer, a light absorption layer, a second transport layer, and a second electrode layer that are sequentially stacked. The first transport layer is a hole transport layer, the second transport layer is an electron transport layer, the light absorption layer is a perovskite layer, and the interface modification layer includes the solar cell modifying material. By forming an interface modification layer between the hole transport layer and the perovskite layer, the camphorsulfonic acid group of the camphorsulfonate acts on the halogen vacancy defects of the perovskite, and the cationic amine group of the camphorsulfonate acts on the cation vacancy defects of the perovskite, realizing the interface modification of the perovskite, improving the non-radiative recombination caused by defects, inhibiting the ion migration in the solar cell, improving the stability of the solar cell, and at the same time, the hydrophobicity of the camphorsulfonate can improve the humidity stability of the solar cell.

[0018] In one embodiment, the thickness of the interface modification layer is 5 nm to 10 nm. The thickness of the interface modification layer is set to have a small impact on the current while achieving the passivation effect, which is beneficial to improving the photoelectric conversion efficiency.

[0019] In one embodiment, the solar cell includes a hole transport layer, and the hole transport layer includes the solar cell modification material. The solar cell modification material is mixed in the hole transport material to passivate the perovskite interface and improve the performance of the solar cell; meanwhile, the coating step of the solar cell modification material film layer is omitted.

[0020] To solve the above technical problems, another technical solution adopted in this application is: to provide a method for preparing a solar cell, including providing a solar cell modification slurry, where the solar cell modification slurry includes camphorsulfonate; coating the solar cell modification slurry on one side of the light absorption layer to form an interface modification layer. The camphorsulfonate modifies the perovskite interface, improves the non-radiative recombination caused by defects, inhibits the ion migration in the solar cell, improves the stability of the solar cell, and at the same time, the hydrophobicity of the camphorsulfonate can improve the humidity stability of the solar cell.

[0021] In one embodiment, the concentration of the camphorsulfonate in the solar cell modification slurry is 5 mmol / L - 10 mmol / L, achieving a better passivation effect, and both the fill factor and open-circuit voltage of the solar cell are significantly improved.

[0022] To solve the above technical problems, another technical solution adopted in this application is: to provide a method for preparing a solar cell, including providing a hole transport slurry, where the hole transport slurry includes a hole transport material and a solar cell modification material; coating the hole transport slurry on one side of the first electrode layer or the light absorption layer to form a hole transport layer. The solar cell modification material is mixed in the hole transport material to passivate the perovskite interface and improve the performance of the solar cell; meanwhile, the coating step of the material layer including the solar cell modification material is omitted.

[0023] In one embodiment, the doping amount of the solar cell modification material in the hole transport slurry is 0.3% - 0.7%, achieving a very good passivation effect, and both the fill factor and open-circuit voltage of the solar cell are significantly improved.

[0024] To solve the above technical problems, another technical solution adopted in this application is: to provide a photovoltaic module, including the solar cell described in any one of the above or the solar cell prepared by the method for preparing a solar cell described in any one of the above. The photovoltaic module has at least the same advantages as the solar cell.

[0025] To solve the above technical problems, another technical solution adopted in this application is: to provide an electrical device, including the solar cell described in any one of the above or the solar cell prepared by the method for preparing a solar cell described in any one of the above or including the photovoltaic module described above. The electrical device has at least the same advantages as the solar cell or the photovoltaic module.

[0026] To solve the above technical problems, another technical solution adopted by this application is: to provide a power generation device, including the solar cell described in any one of the above or the solar cell prepared by the preparation method of the solar cell described in any one of the above, or including the photovoltaic module described above. The power generation device has at least the same advantages as the solar cell or the photovoltaic module.

[0027] The above description is only an overview of the technical solution of this application. In order to be able to understand the technical means of this application more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features and advantages of this application more obvious and understandable, the specific implementation manners of this application are specifically given below. Description of the Drawings

[0028] In order to more clearly illustrate the technical solutions in the embodiments of this application, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of this application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0029] Figure 1 It is a schematic diagram of the action mechanism of camphorsulfonate on the perovskite interface modification provided by the embodiment of this application;

[0030] Figure 2 It is a schematic diagram of the structure of the solar cell provided by the embodiment of this application;

[0031] Figure 3 It is a schematic diagram of the ion migration activation energy and its fitting results of Example 1, Example 2 and Comparative Example 1;

[0032] Figure 4 It is a schematic diagram of the ion migration activation energy and its fitting results of Comparative Example 1, Comparative Example 2 and Comparative Example 3. Detailed Description of the Invention

[0033] To make the purpose, technical solution and effect of this application clearer and more definite, the embodiments of the technical solution of this application will be described in detail below with reference to the drawings. The following embodiments are only used to illustrate the technical solution of this application more clearly, so they are only examples and cannot be used to limit the protection scope of this application.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs; the terms used herein are for the purpose of describing specific embodiments only and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above drawings are intended to cover non-exclusive inclusion.

[0035] In the description of the embodiments of this application, technical terms such as "first" and "second" are only used to distinguish different objects and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity, specific order or primary-secondary relationship of the indicated technical features. In the description of the embodiments of this application, the term "plurality" means two or more (including two). Similarly, "multiple groups" means two or more groups (including two groups), and "multiple pieces" means two or more pieces (including two pieces), unless otherwise specifically defined.

[0036] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in connection with the embodiments can be included in at least one embodiment of this application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0037] In the description of the embodiments of this application, the term "and / or" is merely a description of the association relationship of associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " herein generally represents an "or" relationship between the associated objects before and after.

[0038] Quantities, ratios, and other numerical values are presented herein in a range format. It should be understood that such range formats are for convenience and brevity and should be understood flexibly, including not only the explicitly specified numerical values as range limits, but also all individual numerical values or sub-ranges subsumed within the said range as if each numerical value and sub-range were explicitly specified.

[0039] Unless otherwise specified, all steps of this application can be carried out sequentially, randomly, or in parallel, and preferably sequentially. For example, the method includes steps (a) and (b), which means that the method may include steps (a) and (b) carried out sequentially, or steps (b) and (a) carried out sequentially, or steps (a) and (b) carried out in parallel simultaneously. For example, it is mentioned that the method may further include step (c), which means that step (c) can be added to the method in any order. For example, the method may include steps (a), (b), and (c), or steps (a), (c), and (b), or steps (c), (a), and (b), etc.

[0040] Perovskite solar cells are among the best in the third-generation new photovoltaic technologies. Taking lead iodide-based perovskite solar cells as an example, perovskite film layers are usually prepared by the solution method, and the efficiency of lead iodide-based perovskite solar cells prepared by the solution method has exceeded 26%. However, due to the characteristics of non-uniform growth and crystallization stress during low-temperature deposition by the solution method, various defects exist in the perovskite polycrystalline thin film, which may cause non-radiative recombination, resulting in a decline in the performance of perovskite solar cells. At the same time, iodine vacancies enriched at grain boundary defects are prone to induce ion migration under the action of an electric field and light, gradually leading to the decomposition and phase change of perovskite, and reducing the stability of perovskite cells. Defect treatment of the surface and interface of the perovskite film (the upper surface of the perovskite film layer, the upper surface of the perovskite film layer, and the grain boundaries of perovskite) is a necessary treatment strategy during the application process of perovskite solar cells.

[0041] Currently, ammonium halide salts are commonly used to passivate the surface and interface of perovskite, but the passivation effect of ammonium halide salts is not good. In view of this, this application provides a solar cell modification material, a solar cell and its preparation method, a photovoltaic module, and an electrical device.

[0042] The embodiment of this application provides a solar cell modification material, which includes camphorsulfonate, and the anion of the camphorsulfonate includes at least one of camphorsulfonic acid group and camphor derivative sulfonic acid group.

[0043] When the material of the light absorption layer of the solar cell includes perovskite, the camphorsulfonic acid group and / or camphor derivative sulfonic acid group of the camphorsulfonate act on the anion vacancy defects of perovskite (when the perovskite material includes halide perovskite, the anion vacancy defect can be an iodine vacancy defect), realizing the modification of the perovskite interface, improving the non-radiative recombination caused by defects, increasing the open-circuit voltage and fill factor of the solar cell, improving the stability of the solar cell, and also improving the ion migration in the perovskite solar cell. The structure of the camphorsulfonic acid group and / or camphor derivative sulfonic acid group of the camphorsulfonate is relatively stable and has hydrophobicity, which can improve the humidity stability of the perovskite material.

[0044] It can be understood that after the halogen in the existing passivation material ammonium halide salt is irradiated by light, the chemical activity of the halogen increases and it is prone to migration. The modification of the perovskite interface with the ammonium halide salt material will bring additional halogen ions (for example, I - ), which will exacerbate the movement of halogen ions on the perovskite interface and even lead to irreversible perovskite decomposition. However, the camphorsulfonate adopted in the embodiment of the present application does not contain halogen, which can avoid the introduction of halogen ions. The chemical activity of the groups of the camphorsulfonate is less affected by light and is not prone to migration; the molecular weight of the camphorsulfonic acid group and / or the camphor derivative sulfonic acid group in the camphorsulfonate is greater than the molecular weight of the halogen in the ammonium halide salt, which further illustrates that the camphorsulfonate is not prone to migration. At the same time, the strong anchoring effect of the camphorsulfonate on the perovskite defect sites greatly inhibits the ion movement at the perovskite interface. That is to say, compared with using ammonium halide salt to passivate perovskite, the embodiment of the present application uses camphorsulfonate to passivate perovskite, which can improve the halogen ion migration phenomenon, and further improve the photoelectric instability of the perovskite solar cell caused by the migration of halogen ions.

[0045] In addition, when the embodiment of the present application uses camphorsulfonate to passivate perovskite, the binding force between the camphorsulfonic acid group and / or the camphor derivative sulfonic acid group in the camphorsulfonate and the perovskite defect sites is stronger than the binding force between the halogen of the ammonium halide salt and the perovskite defect sites. Compared with using ammonium halide salt to passivate perovskite, a better passivation effect can be achieved.

[0046] In one embodiment, the cation structural formula of the camphorsulfonate is R1, R2, and R3 are each independently selected from at least one of a substituted or unsubstituted alkane group, a substituted or unsubstituted aromatic group, and a hydrogen atom, and at most two of R1, R2, and R3 are hydrogen atoms. The cation of the camphorsulfonate passivates the cation vacancy defect of the perovskite and improves the non-radiative recombination caused by the defect. The cation of the camphorsulfonate has hydrophobicity, which can improve the humidity stability of the perovskite material.

[0047] Optionally, taking primary amine as an example, the cation structural formula of the camphorsulfonate is + NH3—R1, R1 includes at least one of a substituted or unsubstituted alkane group and a substituted or unsubstituted aromatic group, and R2, R3 are H.

[0048] Optionally, R1, R2, and R3 are each independently selected from at least one of C1-C10 substituted or unsubstituted alkane groups and C6-C10 substituted or unsubstituted aromatic groups, such that the molecular weight of the R group is appropriate, the steric effect of the cation of the camphorsulfonate is small, and the binding force between the cation of the camphorsulfonate and the cation vacancy defect of the perovskite is strong, achieving a better passivation effect. Further optionally, R1, R2, and R3 are each independently selected from at least one of C1-C8 substituted or unsubstituted alkane groups and C6-C8 substituted or unsubstituted aromatic groups, achieving a better passivation effect.

[0049] Optionally, the alkane subunit includes at least one of a branched alkane group and a straight-chain alkane group; and / or, the aromatic group includes at least one of a phenyl group, an alkyl-substituted phenyl group, and a heteroatom-substituted aromatic group, achieving a better passivation effect on the cation vacancy defect of the perovskite. Among them, the straight-chain alkane group includes but is not limited to n-butyl, tert-butyl, n-hexyl, and n-octyl.

[0050] In one embodiment, the camphor derivative sulfonic acid group includes: (borneol sulfonic acid group).

[0051] By acting on the anion vacancy defect of the perovskite with the camphor derivative sulfonic acid group (when the perovskite material is a halide perovskite, the anion vacancy defect can be an iodine vacancy defect), the modification of the perovskite interface is achieved, the non-radiative recombination caused by defects is improved, the open-circuit voltage and fill factor of the solar cell are increased, the stability of the solar cell is improved, and the ion migration in the perovskite solar cell is also improved.

[0052] In one embodiment, the solar cell modification material includes at least one of phenformin camphorsulfonate (PFCA), n-octylammonium camphorsulfonate (OACA), n-hexylammonium camphorsulfonate (HACA), and phenylpropylammonium camphorsulfonate (PPACA). The camphorsulfonic acid group acts on the anion vacancy defect of the perovskite, and the amine-containing alkane group or aromatic group acts on the cation vacancy defect of the perovskite, achieving the passivation of the perovskite and inhibiting non-radiative recombination.

[0053] The molecular formula of phenformin camphorsulfonate is:

[0054]

[0055] The molecular formula of n-octylammonium camphorsulfonate is:

[0056]

[0057] The molecular formula of n-hexylammonium camphorsulfonate is:

[0058]

[0059] The molecular formula of phenylpropanammonium camphorsulfonate is:

[0060]

[0061] Taking OACA as an example to illustrate the principle of the modification of the perovskite interface by camphorsulfonate. Please refer to Figure 1 , Figure 1 which is a schematic diagram of the mechanism of the modification of the perovskite interface by the camphorsulfonate provided in the embodiment of the present application.

[0062] The anionic camphorsulfonic acid group of the camphorsulfonate introduced into the perovskite interface acts on the halogen vacancy defects of the perovskite (exemplarily, when the main body of the perovskite is formamidinium lead iodide, the defects of the perovskite are mainly iodine defects, and the anionic camphorsulfonic acid group of the camphorsulfonate acts on the iodine vacancy defects of the perovskite, as well as acts on other halogen defects), while the cationic amine group acts on the cation vacancy defects of the perovskite. By modifying the perovskite interface through this method, the non-radiative recombination caused by defects is improved.

[0063] The embodiment of the present application also provides a preparation method of a solar cell modification material, specifically:

[0064]

[0065] Among them, R1, R2 and R3 are each independently selected from at least one of a substituted or unsubstituted alkane group, a substituted or unsubstituted aromatic group, and an H atom, corresponding to generate different ammonium salts of camphorsulfonic acid.

[0066] The embodiment of the present application also provides a solar cell. The solar cell includes the solar cell modification material introduced in the above embodiment, which can modify the perovskite interface, improve the non-radiative recombination caused by defects, increase the open-circuit voltage and fill factor of the solar cell, and improve the stability of the solar cell. Please refer to Figure 2 , Figure 2 which is a schematic diagram of the structure of the solar cell provided in the embodiment of the present application.

[0067] The solar cell includes a first electrode layer 14, a first transport layer 12, a light absorption layer 11, a second transport layer 13, and a second electrode layer 15 that are sequentially stacked. The first transport layer 12 and the second transport layer 13 are respectively disposed on opposite sides of the light absorption layer 11. The first electrode layer 14 is disposed on the side of the first transport layer 12 away from the light absorption layer 11. The second electrode layer 15 is disposed on the side of the second transport layer 13 away from the light absorption layer 11. When the solar cell is a normal structure, the first transport layer 12 is an electron transport layer, and the second transport layer 13 is a hole transport layer; when the solar cell is a reverse structure, the first transport layer 12 is a hole transport layer, and the second transport layer 13 is an electron transport layer.

[0068] Taking a solar cell as an example of the formal structure, the setting methods of each film layer of the solar cell will be introduced in detail.

[0069] The light absorption layer 11 is used to absorb light and directly convert light energy into electrical energy through the photovoltaic effect or the photochemical effect. The light absorption layer 11 includes a light-absorbing material with a photovoltaic conversion function. The light-absorbing material absorbs photons of sunlight to generate excitation, and the electrons in the valence band are excited to generate photo-generated holes and electron pairs. The function of the electron transport layer is to efficiently transport the free electrons generated by the light absorption layer 11, transport the free electrons to the first electrode layer 14, effectively block the passage of free holes, and form an ohmic contact at the interface with the light absorption layer 11. The hole transport layer is used to transport the holes generated by the light absorption layer 11 to the second electrode layer 15 and prevent the holes from diffusing in the opposite direction.

[0070] The material of the light absorption layer 11 includes but is not limited to perovskite materials, and perovskite has a photovoltaic conversion function. In one embodiment, the chemical formula of perovskite is ABX3, where A is an inorganic cation and / or an organic amine cation, B is an inorganic cation and / or an organic cation, and X is an inorganic anion and / or an organic anion.

[0071] Among them, A is an inorganic cation, or an organic cation, or a mixture of an inorganic cation and an organic cation. Optionally, A is methylammonium (CH3NH3 + , abbreviated as MA + ), formamidinium (HC(NH2)2 + , abbreviated as FA + ), cesium ion (Cs + ) and rubidium (Rb + ) at least one of them.

[0072] B is an inorganic cation, or an organic cation, or a mixture of an inorganic cation and an organic cation. Optionally, B is a divalent metal ion Pb 2+ and Sn 2+ at least one of them.

[0073] X is an inorganic anion, or an organic anion, or a mixture of an inorganic anion and an organic anion. Optionally, X is a halogen anion, which can be bromide ion (Br - ) or iodide ion (I - ) at least one of them.

[0074] In this embodiment, the light absorption layer 11 includes a halide perovskite material. Exemplarily, the material of the light absorption layer 11 includes FAPbI3.

[0075] The material of the electron transport layer is at least one of the following materials and their derivatives and materials obtained by doping or passivation. The electron transport material includes but is not limited to at least one of imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor material oxides, titanates, and fluorides. Iide compounds include at least one of phthalimide, succinimide, N-bromosuccinimide, glutarimide or maleimide. Quinone compounds include at least one of benzoquinone, naphthoquinone, phenanthrenequinone or anthraquinone. Fullerenes and their derivatives include [6,6]-phenyl-C 61 -Methyl butyrate (PC 61 BM), [6,6]-phenyl-C 71 -Methyl butyrate (PC 71 BM), fullerene C60 (C 60 ), Fullerene C70 (C 70 ). The metal element in the metal oxide includes at least one of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga and Cr; exemplarily, zinc oxide (ZnO) and tin dioxide (SnO2). The semiconductor material oxide includes silicon oxide. The titanate includes at least one of strontium titanate and calcium titanate. The fluoride includes at least one of lithium fluoride and calcium fluoride.

[0076] The material of the hole transport layer is, for example but not limited to, at least one of 2,2',7,7'-tetrakis(N,N-p-methoxyanilino)-9,9'-spirobifluorene (Spiro-OMeTAD), methoxytriphenylamine-fluoroformamidine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3,4-ethylenedioxythiophene), polystyrene sulfonic acid, poly-3-hexylthiophene, triphenylamine with triptycene as the core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-anilino)carbazole-spirobifluorene, polythiophene, phosphate-based monomers, carbazole-based monomers, sulfonic acid-based monomers, triphenylamine-based monomers, aromatic monomers, metal oxides and cuprous thiocyanate, wherein the metal element in the metal oxide selected in the hole transport material includes at least one of Ni, Mo and Cu.

[0077] When the first transport layer 12 is an electron transport layer, the first electrode layer 14 functions to collect free electrons. The first electrode layer 14 is generally an organic conductive material, an inorganic conductive material, or a mixture of an organic conductive material and an inorganic conductive material. Among them, the organic conductive material is, for example, a conductive polymer, and the conductive polymer includes but is not limited to at least one of poly(3,4-ethylenedioxythiophene) (PEDOT), polythiophene, and polyacetylene; the inorganic conductive material is, for example but not limited to, at least one of a transparent conductive oxide, a metal, and a carbon derivative. Specifically, the inorganic conductive material is, for example, Ag, Cu, C, Au, Al, ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium zinc oxide), FTO (fluorine-doped tin oxide), etc.

[0078] When the second transport layer 13 is a hole transport layer, the material of the second electrode layer 15 is, for example but not limited to, FTO (fluorine-doped tin oxide transparent conductive glass), ITO (indium tin oxide transparent conductive glass), AZO (aluminum-doped zinc oxide transparent conductive glass), BZO (boron-doped zinc oxide transparent conductive glass), IZO (indium zinc oxide transparent conductive glass), a metal electrode (for example, gold Au), etc.

[0079] The solar cell further includes a substrate layer 16, and the substrate layer 16 is a transparent substrate layer. The material of the substrate layer 16 includes glass and / or a polymer; optionally, the polymer includes one or more of poly(vinyl alcohol) (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), and polydimethylsiloxane (PDMS). When the solar cell is a normal structure, the substrate layer 16 is disposed on the side of the first electrode layer 14 away from the first transport layer 12. When the solar cell is a reverse structure, the substrate layer 16 is disposed on the side of the first electrode layer 14 away from the first transport layer 12. In some embodiments, the substrate layer 16 may also not be provided; that is to say, the substrate layer 16 is an optional structure.

[0080] In one embodiment, the solar cell further includes an interface modification layer 17, and the interface modification layer 17 is disposed on the surface of the light absorption layer 11. The interface modification layer 17 includes the solar cell modification material introduced in the above embodiments. When the material of the light absorption layer 11 includes a halide perovskite material, by forming a solar cell modification material on the surface of the perovskite of the light absorption layer 11, the camphorsulfonic acid group of the camphorsulfonate acts on the halogen vacancy defects of the perovskite, and the cationic amine group of the camphorsulfonate acts on the cation vacancy defects of the perovskite, so as to realize the interface modification of the perovskite, improve the non-radiative recombination caused by defects, inhibit the ion migration in the solar cell, improve the stability of the solar cell, and at the same time, the hydrophobicity of the camphorsulfonate can improve the humidity stability of the solar cell.

[0081] Optionally, when the solar cell has a normal structure, the interface modification layer 17 is disposed between the light absorption layer 11 and the hole transport layer (the second transport layer 13). The interface modification layer 17 is disposed on the surface of the light absorption layer 11 facing the hole transport layer (the second transport layer 13) to passivate the interface between the light absorption layer 11 and the hole transport layer. Optionally, when the solar cell has an inverted structure, the interface modification layer 17 is disposed between the light absorption layer 11 and the hole transport layer (the first transport layer 12). The interface modification layer 17 is disposed on the surface of the light absorption layer 11 facing the hole transport layer (the first transport layer 12) to passivate the interface between the light absorption layer 11 and the hole transport layer. Optionally, regardless of whether the solar cell has a normal structure or an inverted structure, interface modification layers 17 are provided on the surface of the light absorption layer 11 facing the electron transport layer and on the surface of the light absorption layer 11 facing the hole transport layer to passivate the interface between the light absorption layer 11 and the hole transport layer and the interface between the light absorption layer 11 and the electron transport layer.

[0082] Optionally, the thickness of the interface modification layer 17 is 5 nm to 10 nm. The thickness setting of the interface modification layer 17 has a relatively small impact on the current while achieving the passivation effect, which is beneficial to improving the photoelectric conversion efficiency.

[0083] In one embodiment, the hole transport layer includes the solar cell modification material introduced in the above embodiments. The solar cell modification material is mixed in the hole transport material and coated together to form the hole transport layer. The solar cell modification material in the hole transport layer can passivate the defects at the interface between the hole transport layer and the light absorption layer 11, improving the performance of the solar cell. At the same time, the coating step of one layer of film is omitted. Among them, the principle of the solar cell modification material passivating perovskite can be referred to the relevant introduction above. The electric field after the interaction between the solar cell modification material and perovskite is beneficial to the passage of holes. Therefore, the hole transport layer formed by mixing the solar cell modification material in the hole transport material can passivate perovskite and promote the transport of holes at the same time.

[0084] In one embodiment, the thickness of the light absorption layer 11 is 600 nm - 900 nm.

[0085] In one embodiment, the thickness of the electron transport layer is 20 nm - 100 nm.

[0086] In one embodiment, the thickness of the hole transport layer is 100 nm - 200 nm.

[0087] In one embodiment, the thickness of the second electrode layer 15 is 60 nm - 150 nm.

[0088] The embodiment of the present application also provides a method for preparing a solar cell, including: providing a solar cell modification paste, the solar cell modification paste includes camphorsulfonate; coating the solar cell modification paste on one side of the light absorption layer to form an interface modification layer. Among them, the specific structure of the camphorsulfonate can refer to the introduction of the camphorsulfonate in the above embodiment, and the principle of the camphorsulfonate passivating perovskite can refer to the above introduction, which will not be elaborated here.

[0089] In one embodiment, the main body of the light absorption layer is formamidinium lead iodide, and the preparation method is formed by two-step solution spin coating: in the first step, a lead iodide solution is spin-coated on the first transport layer, and after the first annealing treatment, a lead iodide thin film is obtained; in the second step, an organic ammonium salt solution is spin-coated on the lead iodide thin film, and after the second annealing treatment, a perovskite light absorption layer with the main body of formamidinium lead iodide is obtained. Among them, the organic ammonium salt solution includes an organic solution of formamidinium iodide and methylammonium chloride; the temperature of the first annealing treatment is 50°C - 100°C; the temperature of the second annealing treatment is 100°C - 150°C. The concentration range of the lead iodide solution is: 1.0 mol / L - 1.7 mol / L.

[0090] It should be noted that other functional layers of the solar cell are prepared by solution method and thermal deposition. The materials of the first transport layer, the second transport layer, the first electrode layer and the second electrode layer can be selected according to needs, and reference can be made to the prior art. Optionally, the solar cell is a normal structure, and the preparation method of the solar cell includes: preparing an electron transport layer on the first electrode layer; preparing a perovskite light absorption layer on the electron transport layer; preparing an interface modification layer formed by camphorsulfonate on the perovskite light absorption layer; preparing a hole transport layer on the interface modification layer; preparing a second electrode layer on the hole transport layer. Optionally, the thickness of the light absorption layer 11 is 600 nm - 900 nm, the thickness of the electron transport layer is 20 nm - 100 nm, the thickness of the hole transport layer is 100 nm - 200 nm, and the thickness of the second electrode layer 15 is 60 nm - 150 nm.

[0091] In one embodiment, the concentration of camphorsulfonate in the solar cell modification paste is 5 mmol / L - 10 mmol / L, achieving a good passivation effect, and both the fill factor and the open circuit voltage of the solar cell are significantly improved. It should be noted that mmol / L can also be expressed as mM.

[0092] The embodiment of the present application also provides a method for preparing a solar cell, including: providing a hole transport paste, the hole transport paste includes a hole transport material and a solar cell modification material; coating the hole transport paste on one side of the first electrode layer or the light absorption layer to form a hole transport layer. Among them, the specific structure of the solar cell modification material can refer to the introduction of the solar cell modification material in the above embodiment, and the principle of the solar cell modification material passivating perovskite can refer to the above introduction, which will not be elaborated here.

[0093] In one embodiment, the doping amount of the solar cell modification material in the hole transport paste is 0.3%-0.7%, achieving a good passivation effect, and both the fill factor and open circuit voltage of the solar cell are significantly improved.

[0094] The embodiment of the present application also provides a photovoltaic module, which includes the solar cell provided in the above embodiment of the present application or the solar cell prepared by using the preparation method of the solar cell provided in any of the above embodiments. It should be noted that the specific setting method of the structure of the photovoltaic module other than the solar cell can refer to the prior art and will not be elaborated here.

[0095] The embodiment of the present application also provides an electrical device, which includes the solar cell provided in the above embodiment of the present application or the solar cell prepared by using the preparation method of the solar cell provided in any of the above embodiments or a common device including the photovoltaic module provided in the above embodiment, such as those in the communication field, transportation field, industrial and agricultural fields, lighting field, etc. The electrical device may include, for example, satellites, communication devices, traffic lights, lighthouses, wireless phone booths, monitoring devices in the oil drilling field, power systems, camping lights, electric vehicles, electronic device chargers, etc.

[0096] The embodiment of the present application also provides a power generation device, which includes the solar cell provided in the above embodiment of the present application or the solar cell prepared by using the preparation method of the solar cell provided in any of the above embodiments or includes the photovoltaic module provided in the above embodiment.

[0097] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application clearer, the following will be further described in detail in combination with the embodiments and the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and in no way limits the present application and its application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.

[0098] Example 1:

[0099] Step S1: Clean the FTO substrate successively with detergent, deionized water, acetone and isopropanol.

[0100] Step S2: After drying the cleaned FTO glass in an oven at 70°C, perform ultraviolet-ozone treatment (UV-ozone) on its surface for 15 minutes.

[0101] Step S3: Spin-coat the SnO2 nanoparticle solution (a dispersion with a mass ratio of 7.5%) on the treated FTO glass at 6000 revolutions per minute, and then perform thermal annealing on it at 150 °C for 30 minutes to form a tin oxide film with a thickness of 30 nm.

[0102] Step S4: Perform UV-ozone treatment on the electron transport layer of tin oxide for 20 minutes.

[0103] Step S5: Spin-coat a lead iodide solution with a total concentration of 1.5 M and a solvent of dimethylformamide and dimethyl sulfoxide (the volume ratio of the two is 9:1) on the SnO2 electron transport layer at 1500 revolutions per minute. After annealing at 70 °C for 1 minute, a lead iodide film is obtained. Then, spin-coat a mixed solution of the organic salts formamidinium iodide and methylammonium chloride (where the concentration of formamidinium iodide is 90 mg / mL, the concentration of methylammonium chloride is 12 mg / mL, and the solvent is isopropanol) on the lead iodide film at 1800 revolutions per minute. After annealing at 150 °C for 15 minutes, a formamidinium lead iodide perovskite light-absorbing layer with an average thickness of 650 nm is formed.

[0104] Step S6: Spin-coat a certain concentration of camphorsulfonate solution (the camphorsulfonate is PFCA, with a concentration of 10 mmol / L and a solvent of chloroform) on the upper surface of the perovskite light-absorbing layer at 5000 revolutions per minute. After annealing at 100 °C for 5 minutes, an interfacial modification layer with a thickness of 5 nm is obtained.

[0105] Step S7: Spin-coat the Spiro-OMeTAD solution (with a concentration of 72.3 mg / mL, the main solvent is chlorobenzene, containing two additives: lithium bis(trifluoromethanesulfonyl)imide is 751 mg / mL, dissolved in acetonitrile, and this acetonitrile is added to the main solvent at 35 μL / mL; 4-tert-butylpyridine is added to the main solvent at 30 μL / mL) on the surface of the interfacial modification layer to obtain a hole transport layer.

[0106] Step S8: Evaporate Au on the surface of the hole transport layer by vacuum evaporation to obtain a metal electrode Au with a thickness of 100 nm.

[0107] Through steps S1 to S8, a complete perovskite solar cell is obtained.

[0108] The preparation processes of Other Examples 2-8 and Comparative Examples 1-4 are similar to that of Example 1 above, except that: the material of the interfacial modification layer, the material concentration of the interfacial modification layer, and the presence or absence of the interfacial modification layer, and other parameters are the same. For details, see Table 1.

[0109] Among them, in Table 1, OAI is octylamine iodide, and its structural formula is: C8H 17 NH3 + I -。In Table 1, PPAI is phenylamine iodide, and its structural formula is C9H 11 NH3 + I - 。Octylamine iodide and phenylamine iodide are both ammonium halide salts. In Table 1, OACP is n-octylamine camphor phosphate.

[0110] The relevant parameter test processes of the examples and comparative examples of this application are as follows:

[0111] I-V measurement method:

[0112] By changing the bias voltage point and simultaneously measuring the current, the I-V characteristics (current-voltage curve) of the sample to be measured can be obtained.

[0113] a) Place the test fixture with the sample cell on the sample rack so that it is located within the measurement plane, and ensure that the sample cell is located at the center of the exit light spot of the solar simulator (or the normal of the photovoltaic cell is parallel to the center line of the exit light beam of the solar simulator light source);

[0114] b) Under the condition of an irradiance of 1000 W / m 2 , install a mask on the sample cell to be measured, and use a temperature monitoring device to control the temperature of the sample cell so that during the measurement, the temperature of the sample to be measured is maintained at (25 ± 3 °C);

[0115] c) Set the scan direction, voltage range, scan interval voltage, scan interval time, etc. It is recommended that the scan interval is not greater than 0.02 V, and the interval time between adjacent points is not less than 0.3 s. Measure the forward and reverse scan current-voltage characteristics of the sample cell to be measured, and record the open-circuit voltage V OC , short-circuit current J SC .

[0116] Calculation formula: Fill factor FF = J max *V max / (V OC *J SC ), Photovoltaic conversion efficiency (η) = V OC *J SC *FF.

[0117] Table 1 Test parameter table of Examples 1 to 8 and Comparative Examples 1 to 4

[0118]

[0119] As can be seen from Table 1, the effect of passivating perovskite with the camphorsulfonate provided in the embodiment of the present application is better than that of the existing ammonium halide salt for passivating perovskite. And when the concentration is 5 mmol / L - 10 mmol / L, both the fill factor and the open-circuit voltage of the solar cell are significantly improved. Among them, the greater the concentration, the greater the open-circuit voltage; the fill factor reflects the transport situation of carriers in perovskite during the operation of perovskite. When the concentration of camphorsulfonate is 5 mmol / L - 10 mmol / L, while achieving a good passivation effect, the carrier transport speed is relatively fast.

[0120] It should be noted that Comparative Example 4 is n-octylamine camphorphosphonate (OACP), and the anionic part of this material changes from the in-situ sulfonic acid group (—SO2OH) to a phosphoric acid group (—PO(OH)2) with stronger ionic force for Pb 2+ ions. The result of this comparative example shows that an anion species with a moderate ionic interaction strength is also one of the factors that need to be considered for the interfacial modification material.

[0121] In summary, an ammonium cation material with a moderate ionic mass (low insulation), a moderate ionic radius (small steric hindrance effect), and a moderate ionic interaction (non-ionic liquid) should be selected as much as possible to achieve a better interfacial modification effect without damaging the surface structure of perovskite.

[0122] The steps of Examples 9 to 13 are basically the same as those of Example 1, except that: Step S6 and Step S7 are combined; that is, there is no Step S6, but PFCA, OACA or HACA are respectively introduced into the hole transport material in Step S7.

[0123] Table 2 Test parameter table of Examples 9 to 13 and Comparative Example 1

[0124]

[0125] As can be seen from Table 2, taking PFCA as an example, adding it to the hole transport layer to passivate the upper surface of perovskite, the open-circuit voltage and fill factor of the obtained device are both improved. It can be predicted that other camphorsulfonates can also achieve a comparable passivation effect.

[0126] This application quantitatively studies the ion migration phenomenon of perovskite modified by camphorsulfonate and ammonium halide salt respectively. Specifically, the change in the activation energy of ion migration of the modified perovskite film is tested to compare the probability of ion migration under the action of different interface modification materials, where the different interface modification materials refer to camphorsulfonate and ammonium halide salt. It should be noted that the greater the activation energy of ion migration of a semiconductor, the greater the energy required to overcome for ion migration to occur, and the lower the probability of ion migration in the semiconductor, and vice versa. According to the Nernst-Einstein equation of ion conductivity of a semiconductor at high temperature, the change in ion conductivity of perovskite at varying temperatures can be tested to fit and obtain the activation energy of ion migration:

[0127]

[0128] where σ is the measured conductivity, k B is the Boltzmann constant, σ0 is a constant, T is the test temperature, and E a is the activation energy of ion migration to be deduced. The data variables obtained from the following tests are set as The absolute value of the linear slope in the high-temperature region obtained is the activation energy of ion migration Ea:

[0129]

[0130] The results measured according to the above method are as shown in Figure 3 and Figure 4 shown, Figure 3 which is a schematic diagram of the activation energy of ion migration and its fitting results for Examples 1, 2 and Comparative Example 1 above, Figure 4 which is a schematic diagram of the activation energy of ion migration and its fitting results for Comparative Example 1, Comparative Example 2 and Comparative Example 3 above.

[0131] The activation energy of ion migration of perovskite modified by different camphorsulfonates obtained by linear fitting in the high-temperature region is 1.30 eV (Example 1 - PFAC), 1.23 eV (Example 2 - OACA); while the activation energy of ion migration without any modification and with general ammonium halide modification is 0.28 eV (Comparative Example 1 - unmodified), 0.27 eV (Comparative Example 2 - OAI) and 0.26 eV (Comparative Example 3 - PPAI). The above results show that camphorsulfonate significantly increases the "barrier" for ion migration to occur, reduces the probability of ion migration at the same ambient temperature, and significantly inhibits ion migration in perovskite; while the activation energy of ion migration of perovskite without any interface modification and with general ammonium halide modification is relatively small, only about 0.27 eV, indicating that general ammonium halide has no inhibitory effect on ion migration. On the one hand, the camphorsulfonate used in this application improves the performance of perovskite solar cells in terms of interface modification, and on the other hand, it significantly inhibits the ion migration of perovskite and improves the stability of perovskite.

[0132] The above are only the embodiments of the present application, and do not thereby limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be similarly included in the patent protection scope of the present application.

Claims

1. A solar cell modification material, characterized in that, Comprising: A camphorsulfonate, wherein the anion of the camphorsulfonate comprises at least one of a camphorsulfonic acid group and a camphor derivative sulfonic acid group.

2. The solar cell modification material according to claim 1, characterized in that, The cationic structural formula of the camphorsulfonate is R1, R2, and R3 are each independently selected from at least one of a substituted or unsubstituted alkane group, a substituted or unsubstituted aromatic group, and a hydrogen atom, and at most two of R1, R2, and R3 are hydrogen atoms.

3. The solar cell modification material according to claim 2, characterized in that, R1, R2, and R3 are each independently selected from at least one of a C1-C10 substituted or unsubstituted alkane group and a C6-C10 substituted or unsubstituted aromatic group.

4. The solar cell modification material according to claim 2 or 3, characterized in that, The alkane group comprises at least one of a branched-chain alkane group and a straight-chain alkane group; and / or, The aromatic group comprises at least one of a phenyl group, an alkyl-substituted phenyl group, and a heteroatom-substituted aromatic group.

5. The solar cell modification material according to any one of claims 1 to 4, characterized in that, The solar cell modification material comprises at least one of phenformin camphorsulfonate, n-octylammonium camphorsulfonate, n-hexylammonium camphorsulfonate, and phenylpropylammonium camphorsulfonate.

6. A solar cell, characterized in that, Comprising the solar cell modification material according to any one of claims 1 to 5.

7. The solar cell according to claim 6, characterized in that, The solar cell comprises a first electrode layer, a first transport layer, a light absorption layer, a second transport layer, and a second electrode layer which are sequentially stacked; the solar cell further comprises an interface modification layer, the interface modification layer is disposed on the surface of the light absorption layer facing the first transport layer side, and / or the interface modification layer is disposed on the surface of the light absorption layer facing the second transport layer side, and the interface modification layer comprises the solar cell modification material.

8. The solar cell according to claim 6, characterized in that, The solar cell is a normal structure, the solar cell comprises a first electrode layer, a first transport layer, a light absorption layer, an interface modification layer, a second transport layer, and a second electrode layer which are sequentially stacked, the first transport layer is an electron transport layer, the second transport layer is a hole transport layer, the light absorption layer is a perovskite layer, and the interface modification layer comprises the solar cell modification material.

9. The solar cell according to claim 6, characterized in that, The solar cell is a reverse structure, the solar cell comprises a first electrode layer, a first transport layer, an interface modification layer, a light absorption layer, a second transport layer, and a second electrode layer which are sequentially stacked, the first transport layer is a hole transport layer, the second transport layer is an electron transport layer, the light absorption layer is a perovskite layer, and the interface modification layer comprises the solar cell modification material.

10. The solar cell according to any one of claims 7 to 9, characterized in that, The thickness of the interface modification layer is 5 nm to 10 nm.

11. The solar cell according to claim 6, characterized in that, The solar cell comprises a hole transport layer, and the hole transport layer comprises the solar cell modification material.

12. A method for preparing a solar cell according to any one of claims 6 to 10, characterized in that, Comprising: Providing a solar cell modification slurry, the solar cell modification slurry comprising a camphorsulfonate; Coating the solar cell modification slurry on one side of the light absorption layer to form an interface modification layer.

13. The method for preparing a solar cell according to claim 12, characterized in that, The concentration of the camphorsulfonate in the solar cell modification slurry is 5 mmol / L - 10 mmol / L.

14. A method for preparing a solar cell according to claim 6 or 11, characterized in that, Comprising: Providing a hole transport slurry, the hole transport slurry comprising a hole transport material and a solar cell modification material; Coating the hole transport slurry on one side of the first electrode layer or the light absorption layer to form a hole transport layer.

15. The method for preparing a solar cell according to claim 14, characterized in that, The doping amount of the solar cell modification material in the hole transport slurry is 0.3% - 0.7%.

16. A photovoltaic module, characterized in that, Comprising the solar cell according to any one of claims 6 to 11 or the solar cell prepared by the preparation method of the solar cell according to any one of claims 12 to 15.

17. An electrical device, characterized in that, A solar cell according to any one of claims 6 to 11, or a solar cell prepared by a method for preparing a solar cell according to any one of claims 12 to 15, or a photovoltaic module according to claim 16.

18. A power generation device, characterized in that, A solar cell according to any one of claims 6 to 11, or a solar cell prepared by a method for preparing a solar cell according to any one of claims 12 to 15, or a photovoltaic module according to claim 16.

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