Organic compound and light-emitting device

Abstract

Provided are a novel organic compound and a light-emitting device using the same. One embodiment of the present invention is an organic compound having a benzofuranopyrimidine skeleton or a benzothienopyrimidine skeleton, a first substituent and a second substituent, the first substituent representing a carbazole skeleton, the second substituent representing a benzothienopyrimidine skeleton, and the third substituent representing a benzothienopyrimidine skeleton. The second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, and a triphenylene skeleton, the first substituent is bonded to a pyrimidine ring of the benzofuranopyrimidine skeleton or the benzothienopyrimidine skeleton, and the second substituent is bonded to a benzene ring of the benzofuranopyrimidine skeleton or the benzothienopyrimidine skeleton.

Description

Technical Field

[0001] One aspect of the present invention relates to an organic compound, an organic semiconductor element, a light-emitting device, a photodiode sensor, a display module, a lighting module, a display device, an electronic device, a lighting device, and an electronic device. Note that one aspect of the present invention is not limited to the above technical field. One aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. One aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Thus, more specifically, as an example of the technical field of one aspect of the present invention disclosed in this specification, semiconductor devices, display devices, liquid crystal display devices, lighting devices, power storage devices, storage devices, imaging devices, driving methods of these devices, or manufacturing methods of these devices can be cited. Background Art

[0002] Since a light-emitting device (also referred to as an organic EL element) containing an organic compound as a light-emitting substance between a pair of electrodes has characteristics such as being thin and lightweight, having a high response speed, and being able to be driven at a low voltage, development related to displays using the light-emitting device has been underway. When a voltage is applied to the above light-emitting device, electrons and holes injected from the electrodes recombine, so that the light-emitting substance becomes an excited state, and light is emitted when the excited state returns to the ground state. In addition, as types of excited states, singlet excited states (S * ) and triplet excited states (T * ) can be cited. Among them, light emission derived from a singlet excited state is called fluorescence, and light emission derived from a triplet excited state is called phosphorescence. In addition, in a light-emitting device, the statistically generated ratio of singlet excited states and triplet excited states is considered to be S * : T * = 1:3.

[0003] In addition, among the above light-emitting substances, a compound that can convert the energy of a singlet excited state into light emission is called a fluorescent compound (fluorescent material), and a compound that can convert the energy of a triplet excited state into light emission is called a phosphorescent compound (phosphorescent material).

[0004] Therefore, based on the above generation ratio, the theoretical limit of the internal quantum efficiency (the ratio of generated photons to injected carriers) of a light-emitting device using a fluorescent material is considered to be 25%, and the theoretical limit of the internal quantum efficiency of a light-emitting device using a phosphorescent material is considered to be 75%.

[0005] In addition, since the light-emitting layer of this light-emitting device can be continuously formed two-dimensionally, surface light emission can be obtained. Since this is a feature that is difficult to obtain in point light sources typified by incandescent lamps and LEDs or in line light sources typified by fluorescent lamps, the above-described light-emitting device also has high utility value as a surface light source applicable to lighting and the like.

[0006] Regarding such a light-emitting device, material development, improvement of the device structure, etc. are being carried out to improve its device characteristics. For example, Patent Document 1 discloses a light-emitting device in which a novel anthracene derivative is used as a host material in order to form a light-emitting element with high luminous efficiency.

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-76999 Summary of the Invention

[0008] An object of one aspect of the present invention is to provide a novel organic compound. Another object of one aspect of the present invention is to provide an organic compound that can be used in a light-emitting device. Another object of one aspect of the present invention is to provide a light-emitting device with high luminous efficiency. Another object of one aspect of the present invention is to provide a light-emitting device with high color purity. Another object of one aspect of the present invention is to provide a light-emitting device with high reliability. Another object of one aspect of the present invention is to provide any one of a display device, an electronic device, and a lighting device with low power consumption. Another object of one aspect of the present invention is to provide any one of a display device, an electronic device, and a lighting device with high reliability. Another object of one aspect of the present invention is to provide any one of a display device, an electronic device, and a lighting device with high color purity.

[0009] The present invention only needs to achieve any one of the above objects.

[0010] One aspect of the present invention is an organic compound having a benzofuranopyrimidine skeleton or a benzothiophenopyrimidine skeleton, a first substituent, and a second substituent, wherein the first substituent represents a carbazole skeleton, and the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, and a triphenylene skeleton. The first substituent is bonded to the pyrimidine ring of the benzofuranopyrimidine skeleton or the benzothiophenopyrimidine skeleton, and the second substituent is bonded to the benzene ring of the benzofuranopyrimidine skeleton or the benzothiophenopyrimidine skeleton.

[0011] In addition, one embodiment of the present invention is an organic compound having a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent, wherein the first substituent represents a carbazole skeleton, and the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, and a triphenylene skeleton. The first substituent is bonded to the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or the 4-position of the benzothieno[3,2-d]pyrimidine skeleton, and the second substituent is bonded to the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the 8-position of the benzothieno[3,2-d]pyrimidine skeleton.

[0012] In addition, one embodiment of the present invention is an organic compound represented by the general formula (G1).

[0013] [Chemical formula 1]

[0014] In the above formula, R 1 to R 8 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, R 9 to R 11 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. X represents an oxygen atom or a sulfur atom, and A1 represents any one of the substituents represented by the following general formulas (A-1) to (A-5).

[0015] [Chemical formula 2]

[0016] In the above formula, R 12 to R 57 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

[0017] In the above organic compound, the lowest triplet excitation (T1) energy level is 2.95 eV or less and 2.75 eV or more.

[0018] In addition, one embodiment of the present invention is an organic compound represented by the structural formula (100), the structural formula (101), the structural formula (102), or the structural formula (103).

[0019] [Chemical formula 3]

[0020] In addition, one aspect of the present invention is a light-emitting device including a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode. The light-emitting layer contains a first organic compound, a second organic compound, and a light-emitting substance that exhibits blue. The second organic compound has a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent. The first substituent represents a carbazole skeleton, and the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, or a triphenylene skeleton. The first substituent is bonded to the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or the 4-position of the benzothieno[3,2-d]pyrimidine skeleton, and the second substituent is bonded to the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the 8-position of the benzothieno[3,2-d]pyrimidine skeleton. The absolute value of the difference between the HOMO energy level of the first organic compound and the LUMO energy level of the second organic compound is 2.78 eV or more and 2.85 eV or less.

[0021] In addition, one aspect of the present invention is a light-emitting device including a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode. The light-emitting layer contains a first organic compound, a second organic compound represented by the general formula (G1), and a light-emitting substance that exhibits blue. The absolute value of the difference between the HOMO energy level of the first organic compound and the LUMO energy level of the second organic compound is 2.78 eV or more and 2.85 eV or less.

[0022] [Chemical formula 4]

[0023] In the above formula, R 1 to R 8 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, and X represents an oxygen atom or a sulfur atom, and A1 represents any one of the substituents represented by the following general formulas (A-1) to (A-5).

[0024] [Chemical formula 5]

[0025] In the above formula, R 12 to R 57 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

[0026] In addition, one embodiment of the present invention is a light-emitting device including an organic compound represented by Structural Formula (100), Structural Formula (101), Structural Formula (102), or Structural Formula (103).

[0027] [Chemical Formula 6]

[0028] In the above light-emitting device, the first organic compound and the second organic compound are a combination capable of forming an exciplex.

[0029] In the above light-emitting device, the emission spectrum of the light-emitting substance is 400 nm or more and less than 490 nm.

[0030] In the above light-emitting device, the light-emitting substance can obtain phosphorescent emission.

[0031] In the above light-emitting device, the light-emitting layer contains a fluorescence sensitizer.

[0032] In addition, another embodiment of the present invention is a display device including any of the above light-emitting devices.

[0033] In addition, another embodiment of the present invention is an electronic device including: the above light-emitting device; a sensor, an operation button, a speaker, or a microphone.

[0034] In addition, another embodiment of the present invention is a lighting device including: the above light-emitting device; and a housing.

[0035] According to one embodiment of the present invention, a novel organic compound can be provided. In addition, according to one embodiment of the present invention, an organic compound that can be used as a light-emitting device can be provided. In addition, according to one embodiment of the present invention, a light-emitting device with high luminous efficiency can be provided. In addition, according to one embodiment of the present invention, a light-emitting device with high color purity can be provided. In addition, according to one embodiment of the present invention, a light-emitting device with high reliability can be provided. In addition, any one of a display device, an electronic device, and a lighting device with low power consumption can be provided. In addition, any one of a display device, an electronic device, and a lighting device with high reliability can be provided. In addition, any one of a display device, an electronic device, and a lighting device with high color purity can be provided.

[0036] Note that the description of these effects does not preclude the existence of other effects. In addition, one embodiment of the present invention does not need to achieve all of the above effects. In addition, effects other than the above can be known and extracted from the descriptions in the specification, drawings, claims, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1A and Figure 1B is a schematic diagram of the light-emitting device; FIG. 2A to FIG. 2E is a diagram showing the structure of a light-emitting device; Figure 3A and Figure 3B are a top view and a cross-sectional view of a light-emitting device; FIG. 4A to FIG. 4D is a diagram showing a light-emitting device; Figures 5A to 5E is a cross-sectional view showing an example of a manufacturing method of a display device; Fig. 6A and Figure 6B is a cross-sectional view showing an example of a manufacturing method of a display device; 7A to 7D is a cross-sectional view showing an example of a manufacturing method of a display device; FIG. 8A to FIG. 8C is a cross-sectional view showing an example of a manufacturing method of a display device; 9A to 9C is a cross-sectional view showing an example of a manufacturing method of a display device; FIG. 10A to FIG. 10C is a cross-sectional view showing an example of a manufacturing method of a display device; FIG. 11A to FIG. 11G is a top view showing an example of the structure of a pixel; FIG. 12A to FIG. 12I is a top view showing an example of the structure of a pixel; Fig.13A and Fig. 13B is a perspective view showing an example of the structure of a display module; Fig.14A and Fig. 14B is a cross-sectional view showing an example of the structure of a display device; Fig.15 is a perspective view showing an example of the structure of a display device; Fig.16 is a cross-sectional view showing an example of the structure of a display device; Fig.17 is a cross-sectional view showing an example of the structure of a display device; Fig.18A is a cross-sectional view showing an example of the structure of a display device, Fig.18B and Fig.18C is a top view showing the structure of a display device; Fig.19 is a cross-sectional view showing an example of the structure of a display device; Fig. 20A is a cross-sectional view showing an example of the structure of a display device, Fig. 20B and Fig. 20C is a top view showing the structure of a display device; FIG. 21A to FIG. 21Dis a diagram showing an example of an electronic device; FIG. 22A to FIG. 22F is a diagram showing an example of an electronic device; FIG. 23A to FIG. 23G is a diagram showing an example of an electronic device; Fig.24 is of an organic compound 1 1H NMR spectrum; Fig.25 is a diagram illustrating the absorption spectrum and emission spectrum in a toluene solution of an organic compound; Fig.26 is a diagram illustrating the absorption spectrum and emission spectrum of a thin film of an organic compound; Fig. 27 is of an organic compound 1 1H NMR spectrum; Fig.28 is of an organic compound 1 1H NMR spectrum; Fig.29 is a diagram illustrating the absorption spectrum and emission spectrum in a toluene solution of an organic compound; Fig.30 is a diagram illustrating the absorption spectrum and emission spectrum of a thin film of an organic compound; Fig.31 is of an organic compound 1 1H NMR spectrum; Fig.32 is a diagram illustrating the absorption spectrum and emission spectrum in a toluene solution of an organic compound; Fig.33 is a diagram illustrating the absorption spectrum and emission spectrum of a thin film of an organic compound; Fig.34 is a diagram illustrating the photoluminescence (PL) spectrum of an organic compound; Fig.35 is a diagram illustrating the photoluminescence (PL) spectrum of an organic compound; Fig.36 is a diagram illustrating the photoluminescence (PL) spectrum of an organic compound; Fig.37 is a diagram illustrating the photoluminescence (PL) spectrum of an organic compound; Fig.38 is a diagram illustrating the structure of a light-emitting device; Fig.39 is a diagram illustrating the luminance-current density characteristics of a light-emitting device; Fig.40 is a diagram illustrating the luminance-voltage characteristics of a light-emitting device; Fig.41 is a diagram illustrating the current efficiency-current density characteristics of a light-emitting device; Fig.42 It is a diagram showing the current density-voltage characteristics of a light-emitting device; Fig.43 It is a diagram showing the power efficiency-current density characteristics of a light-emitting device; Fig.44 It is a diagram showing the external quantum efficiency-current density characteristics of a light-emitting device; Fig.45 It is a diagram showing the blue index-current density characteristics of a light-emitting device; Fig.46 It is a diagram showing the emission spectrum of a light-emitting device; Fig.47 It is a diagram showing the photoluminescence (PL) spectrum of a mixed film of organic compounds; Fig.48 It is a diagram showing the photoluminescence (PL) spectrum of a mixed film of organic compounds; Fig.49 It is a diagram showing the photoluminescence (PL) spectrum of a mixed film of organic compounds; Fig.50 It is a diagram showing the absorption spectrum and emission spectrum of a luminescent substance. Fig.51 is of an organic compound 1 1H NMR spectrum. Detailed implementation mode

[0038] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and it is easily understood by those of ordinary skill in the art that the manner and details can be changed into various forms without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited only to the content described in the embodiments shown below.

[0039] Note that in this specification, etc., a device manufactured using a metal mask or FMM (Fine Metal Mask) may sometimes be referred to as a device having an MM (Metal Mask) structure. In addition, in this specification, etc., a device not manufactured using a metal mask or FMM may sometimes be referred to as a device having an MML (Metal Mask Less) structure.

[0040] Embodiment 1 In this embodiment, an organic compound of one mode of the present invention will be described.

[0041] <Examples of organic compounds> One embodiment of the present invention is an organic compound having a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent, wherein the first substituent represents a carbazole skeleton, and the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, and a triphenylene skeleton. The first substituent is bonded to the pyrimidine ring of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton, and the second substituent is bonded to the benzene ring of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton.

[0042] In particular, the above-mentioned benzofuro[3,2-d]pyrimidine skeleton or benzothieno[3,2-d]pyrimidine skeleton is preferably a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton. This skeleton has a high triplet excitation energy level (T1 energy level) and high electron transport properties, and is therefore suitable as a material for light-emitting devices in the blue region.

[0043] Therefore, another embodiment of the present invention is an organic compound having a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent, wherein the first substituent represents a carbazole skeleton, and the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, and a triphenylene skeleton. The first substituent is bonded to the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton, and the second substituent is bonded to the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton.

[0044] Note that having a carbazole skeleton at the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton can suppress the expansion of conjugation and maintain an appropriate LUMO (Lowest Unoccupied Molecular Orbital) energy level. In addition, the thermal properties and the stability of the molecule can be improved while maintaining a high triplet excitation energy level (T1 energy level).

[0045] In addition, having a substituent at the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton can improve the thermal properties and the stability of the molecule while maintaining a high triplet excitation energy level (T1 energy level).

[0046] In addition, in the organic compound according to one embodiment of the present invention, the lowest triplet excitation (T1) energy level is 2.95 eV or less and 2.75 eV or more.

[0047] In addition, regarding the lowest triplet excitation energy level (T1) of an organic compound, a tangent line is drawn at the value with the maximum slope on the short-wavelength side of the peak in the phosphorescence spectrum, and the energy of the intersection point of this tangent line with the horizontal axis (wavelength) or the baseline is set as the T1 energy level (for example, refer to Daisaku TANAKA et al., "Ultra High Efficiency Green Organic Light-Emitting Devices", Japanese Journal of Applied Physics, Vol. 46, No. 1, 2007, pp. L10-L12). In addition, as another method, when the ν = 0 → ν = 0 transition (0 → 0 band) between the ground state and the excited state vibrational energy levels is clearly observed in the phosphorescence spectrum, the T1 energy level can also be calculated using this 0 → 0 band (Nicholas J. Turro, V. Ramamurthy, J. C. Scaiano, "MODERN MOLECULAR PHOTOCHEMISTRY OF ORGANIC MOLECULES", UNIVERSITY SCIENCE BOOKS, published on February 10, 2010, pp. 204-208). Additionally, when comparing energy levels, the energy levels calculated by the same method are used for comparison.

[0048] Note that in this specification, the lowest triplet excitation energy level (T1 energy level) can be calculated by measuring the emission spectrum (phosphorescence spectrum) at a measurement temperature of 10 K using a thin film of a 50-nm sample deposited on a quartz substrate. In the measurement, it is preferable to use a microscopic PL device LabRAM HR-PL (manufactured by Horiba, Ltd., Japan), and use a He-Cd laser (325 nm) as the excitation light. Note that a tangent line is drawn at the value with the maximum inclination on the short-wavelength side of the peak (or shoulder peak) observed at the shortest wavelength in the emission spectrum (phosphorescence spectrum), and the emission end is calculated based on the intersection point of this tangent line with the horizontal axis (wavelength) or the baseline.

[0049] <<Example 1 of organic compound>> One embodiment of the present invention is an organic compound represented by the general formula (G1).

[0050] [Chemical formula 7]

[0051] Note that R 1 to R 8 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, R 9 to R 11Each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents an oxygen atom or a sulfur atom, and A1 represents any one of the substituents represented by the following general formulas (A-1) to (A-5).

[0052] [Chemical formula 8]

[0053] Note that R 12 to R 57 Each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

[0054] Specific examples of the alkyl group having 1 to 6 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, tert-butyl, pentyl, isopentyl, sec-pentyl, tert-pentyl, neopentyl, hexyl, isohexyl, 3-methylpentyl, 2-methylpentyl, 2-ethylbutyl, 1,2-dimethylbutyl, and 2,3-dimethylbutyl.

[0055] Specific examples of the cycloalkyl group having 3 to 6 carbon atoms include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclononyl, cyclodecyl, cyclododecyl, and as the cycloalkyl group having 4 to 10 carbon atoms with a crosslinked structure, bicyclobutyl, noradamantyl, adamantyl, norbornyl, tetrahydrodicyclopentadienyl can be cited.

[0056] Specific examples of the aryl group having 6 to 30 carbon atoms include phenyl, tolyl, benzylmethyl, biphenyl, indenyl, naphthyl, fluorenyl, spirofluorenyl, phenanthryl, triphenylenyl.

[0057] Specific examples of the heteroaryl group having 1 to 30 carbon atoms include groups having a triazine ring, a pyrimidine ring, a pyridine ring, a phenanthroline ring, a carbazole ring, a dibenzofuran ring, a dibenzothiophene ring, a benzonaphthofuran ring, a benzonaphthothiophene ring, an indolocarbazole ring, a benzofurancarbazole ring, a benzothiophenecarbazole ring, an indolocarbazole ring, and a dibenzocarbazole ring.

[0058] Note that in the general formulas (G1) and (A-1) to (A-5), hydrogen can also be appropriately replaced with deuterium.

[0059] <Specific examples> Next, specific examples of the organic compound of one embodiment of the present invention having the structure represented by the above general formula (G1) are shown below.

[0060] [Chemical formula 9]

[0061] [Chemical formula 10]

[0062] The organic compounds represented by the above structural formulas (100) to (114) and the above structural formulas (200) to (214) are an example of the organic compound represented by the above general formula (G1), but the organic compound of one embodiment of the present invention is not limited thereto.

[0063] <Synthesis method of organic compound> Hereinafter, a method for synthesizing the organic compound represented by the general formula (G1) will be described. Various reactions can be applied as the method for synthesizing this organic compound.

[0064] [Chemical formula 11]

[0065] In addition, in the organic compound represented by the above general formula (G1), as shown in the following synthesis scheme (S-1), by reacting a dihalogen compound (B1) having a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton with a carbazole compound (B2), and reacting the intermediate (B3) with a boronic acid compound (B4) of A1, an organic compound represented by the general formula (G1) can be obtained.

[0066] [Chemical formula 12]

[0067] In the above general formula (B1), X represents an oxygen atom or a sulfur atom, and Y1 and Y2 represent a halogen. In addition, R 1 to R 8 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, R 9 to R 11 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and A1 represents any one of the substituents represented by the general formulas (A-1) to (A-5). Q represents boric acid, borate ester, cyclic triol borate, etc. As the cyclic triol borate, potassium salt and sodium salt can be used in addition to the lithium salt.

[0068] [Chemical Formula 13]

[0069] Examples of the palladium catalyst that can be used in the coupling reaction represented by the above synthesis scheme (S-1) include palladium(II) acetate, tetrakis(triphenylphosphine)palladium(0), bis(triphenylphosphine)palladium(II) dichloride, allylpalladium(II) chloride dimer, and the like.

[0070] Examples of the ligand of the above palladium catalyst include di(1-adamantyl)-n-butylphosphine, (±)-2,2'-bis(diphenylphosphino)-1,1'-binaphthalene, tris(o-tolyl)phosphine, triphenylphosphine, tricyclohexylphosphine, di-tert-butyl(2,2-diphenyl-1-methyl-1-cyclopropyl)phosphine, and the like.

[0071] Examples of the base that can be used in the coupling reaction represented by the above synthesis scheme (S-1) include organic bases such as potassium tert-butoxide, and inorganic bases such as potassium carbonate, sodium carbonate, and tripotassium phosphate.

[0072] Examples of the solvent that can be used in the coupling reaction represented by the above synthesis scheme (S-1) include toluene, xylene, mesitylene, benzene, tetrahydrofuran, dioxane, diethylene glycol dimethyl ether, and the like. Note that the solvents that can be used are not limited to these.

[0073] In addition, the reaction carried out in the above synthesis scheme (S-1) is not limited to the Suzuki-Miyaura reaction or the Buchwald-Hartwig reaction, and the Negishi-Kosugi-Stille coupling reaction using an organotin compound, the coupling reaction using a Grignard reagent, the Ullmann reaction using copper or a copper compound, the nucleophilic substitution reaction, etc. can also be used.

[0074] In addition, a variety of the above compound (B1), compound (B2), and compound (B4) can be synthesized.

[0075] The organic compound of one embodiment of the present invention can be synthesized as described above, but the present invention is not limited thereto, and it can also be synthesized by other synthesis methods.

[0076] This embodiment can be used in any combination with other embodiments and examples.

[0077] Embodiment 2 In this embodiment, the structure of a light-emitting device using the organic compound shown in Embodiment 1 will be described.

[0078] The practical application of a display (organic EL display) using an organic EL element (hereinafter also referred to as a light-emitting device) as a display element has been around for a long time. In this display, in order to achieve full-color display, it usually includes pixels that emit light of at least three colors: red, green, and blue.

[0079] In this pixel, a light-emitting device is provided for each light-emitting color. In a display using the Side by Side method (so-called separate coating method), each light-emitting device includes different light-emitting materials according to the light-emitting color of the corresponding pixel.

[0080] Here, it is known that in a current-excited organic EL device, the generation probability of singlet excited state and triplet excited state is 1:3, and the theoretical limit of the internal quantum efficiency of a light-emitting device using a fluorescent material that can only use the singlet excited state for light emission is 25%. On the other hand, since a phosphorescent material can convert the singlet excited state into a triplet excited state through intersystem crossing, a light-emitting device with an internal quantum efficiency of 100% can be theoretically realized, and a light-emitting device with a higher light-emitting efficiency can be obtained compared with a fluorescent material.

[0081] In addition, when an organic compound (also called a host material) used to disperse the light-emitting material is used in the light-emitting layer, this host material needs to be a material whose triplet excitation energy level and singlet excitation energy level are higher than those of the light-emitting material (also called a guest material) respectively. On the other hand, the light-emitting energy of blue is higher than that of red or green, so the triplet excitation energy level and singlet excitation energy level of the host material used to disperse the blue light-emitting material need to be higher than those of red or green devices. Therefore, the range of material selection is narrow, and it is difficult to obtain a material with good performance.

[0082] One aspect of the present invention provides a light-emitting device that uses a phosphorescent material as a light-emitting material and uses the organic compound described in Embodiment 1 as a host material. The structure of the light-emitting device according to one aspect of the present invention will be described below.

[0083] <Example of the structure of the light-emitting device> Figure 1A It is a cross-sectional schematic diagram of a light-emitting device 10 according to one aspect of the present invention. The light-emitting device 10 includes a pair of electrodes (a first electrode 101 and a second electrode 102), and includes an organic compound layer 103 disposed between the pair of electrodes. The organic compound layer 103 at least includes a light-emitting layer 113.

[0084] In addition to the light-emitting layer 113, Figure 1A The organic compound layer 103 shown also includes functional layers such as a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer 115.

[0085] Note that, although in this embodiment, the first electrode 101 in a pair of electrodes is described as the anode and the second electrode 102 as the cathode, the structure of the light-emitting device 10 is not limited thereto. That is to say, the first electrode 101 can also be used as the cathode and the second electrode 102 as the anode, so that the stacking order of the respective layers between the electrodes is reversed. That is to say, a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 may be stacked in sequence from the anode side.

[0086] Note that the structure of the organic compound layer 103 is not limited to Figure 1A the structure shown, and it is sufficient if it includes at least one selected from the hole injection layer 111, the hole transport layer 112, the electron transport layer 114, and the electron injection layer 115. Alternatively, the organic compound layer 103 may also include a functional layer having the following functions: capable of reducing the injection barrier of holes or electrons; capable of improving the transportability of holes or electrons; capable of hindering the transportability of holes or electrons; or capable of suppressing the quenching phenomenon caused by the electrodes, etc. Note that the functional layer may be a single layer or a structure in which multiple layers are stacked.

[0087] Figure 1B is a cross-sectional schematic diagram showing Figure 1A an example of the light-emitting layer 113 shown. Figure 1B The light-emitting layer 113 shown includes a host material 118 (organic compound 118_1 and organic compound 118_2) and a guest material 119 (luminescent substance).

[0088] In addition, as the guest material 119, a luminescent organic compound may be used, and as the luminescent organic compound, a substance capable of emitting phosphorescence (hereinafter also referred to as a phosphorescent compound) is preferably used.

[0089] In addition, in the light-emitting layer 113, the host material 118 exists in the largest weight ratio, and the guest material 119 is dispersed in the host material 118. As described above, it is preferable that the lowest triplet excitation energy level (T1 level) of the host material 118 (organic compound 118_1 and organic compound 118_2) of the light-emitting layer 113 is higher than the T1 level of the guest material 119 of the light-emitting layer 113.

[0090] Specifically, for example, when a phosphorescent compound that exhibits blue color is used for the guest material 119, the lowest triplet excitation energy level (T1 level) of at least the organic compound 118_1 is preferably 2.75 eV or more and 2.95 eV or less.

[0091] In addition, the host materials 118 (organic compound 118_1 and organic compound 118_2) in the light-emitting layer 113 preferably form an exciplex (also referred to as Exciplex). An exciplex is an excited state formed by two or more substances. In the case of photoexcitation, the exciplex is formed by the interaction between one substance in the excited state and another substance in the ground state.

[0092] Specifically, for example, when a blue phosphorescent compound is used as the guest material 119, it is difficult to form an exciplex whose emission spectrum (PL spectrum) overlaps with the absorption spectrum of the guest material 119 when the absolute value of the difference between the LUMO energy level of the organic compound 118_1 and the HOMO energy level of the organic compound 118_2 is 2.70 eV or less. In addition, when the LUMO energy level of the organic compound 118_1 is too low, an exciplex with a small energy is formed between the HOMO energy level of the guest material 119 and the LUMO energy level of the organic compound 118_1, and sometimes the emission spectrum becomes broad.

[0093] Thus, by reducing the intermolecular interaction between the organic compound 118_1 and the guest material 119, a sharper emission spectrum can be obtained.

[0094] Therefore, by adopting a structure of a light-emitting device in which the lowest triplet excitation energy level (T1 energy level) of the organic compound 118_1 is 2.75 eV or more and 2.95 eV or less, and the absolute value of the difference between the LUMO energy level of the organic compound 118_1 and the HOMO energy level of the organic compound 118_2 is 2.75 eV or more and 2.85 eV or less, preferably 2.78 eV or more and 2.85 eV or less, a light-emitting device that exhibits good blue color can be provided.

[0095] One mode of the organic compound of the present invention described in Embodiment 1 has a benzofuro[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent. The first substituent represents a carbazole skeleton, and the second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, and a triphenylene skeleton. The first substituent is bonded to the 4-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton, and the second substituent is bonded to the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton. This organic compound can be used as the organic compound 118_1.

[0096] In particular, in the organic compound represented by the general formula (G1), by making the second position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton hydrogen, the organic compound can be prevented from becoming bulky. Therefore, it is easy to interact with the organic compound 118_2, and an exciplex is easily formed.

[0097] In addition, in the organic compound represented by the general formula (G1), by having a substituent at the 8-position of the benzofuro[3,2-d]pyrimidine skeleton or the benzothieno[3,2-d]pyrimidine skeleton, the thermal properties and the stability of the molecule can be improved while maintaining a high triplet excitation energy level (T1 level), and thus the reliability of the light-emitting device can be improved.

[0098] <Basic Structure of Light-Emitting Device> Next, with reference to FIG. 2A to FIG. 2E the basic structure of the light-emitting device will be described in more detail. Figure 2A A light-emitting device having a structure (single-layer structure) in which an organic compound layer (also referred to as an EL layer) having a light-emitting layer is included between a pair of electrodes is shown. Specifically, an organic compound layer 103 is included between a first electrode 101 and a second electrode 102.

[0099] In addition, Figure 2B A light-emitting device having a stacked structure (series structure) in which a plurality of ( Figure 2B two in this case) organic compound layers (103a, 103b) are included between a pair of electrodes and a charge generation layer 106 is included between the organic compound layers is shown. The light-emitting device having a series structure can achieve a high-efficiency light-emitting device without changing the current amount.

[0100] The charge generation layer 106 has the following function: when a potential difference is generated between the first electrode 101 and the second electrode 102, electrons are injected into one organic compound layer (103a or 103b) and holes are injected into the other organic compound layer (103b or 103a). Thus, in Figure 2B this case, when a voltage is applied such that the potential of the first electrode 101 is higher than the potential of the second electrode 102, electrons are injected from the charge generation layer 106 into the organic compound layer 103a and holes are injected into the organic compound layer 103b.

[0101] In addition, from the viewpoint of light extraction efficiency, the charge generation layer 106 preferably has translucency to visible light (specifically, the visible light transmittance of the charge generation layer 106 is 40% or more). In addition, the charge generation layer 106 functions even if its conductivity is lower than that of the first electrode 101 and the second electrode 102.

[0102] In addition, Figure 2CThe stacked structure of the organic compound layer 103 of a light-emitting device showing one embodiment of the present invention is shown. Note that, in this case, the first electrode 101 is used as an anode and the second electrode 102 is used as a cathode. The organic compound layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially stacked on the first electrode 101. Note that multiple light-emitting layers having different light-emitting colors may be stacked in the light-emitting layer 113. For example, a light-emitting layer containing a light-emitting substance that exhibits red, a light-emitting layer containing a light-emitting substance that exhibits green, and a light-emitting layer containing a light-emitting substance that exhibits blue may be stacked with or without a layer containing a charge-transporting material therebetween. Alternatively, a light-emitting layer containing a light-emitting substance that exhibits yellow and a light-emitting layer containing a light-emitting substance that exhibits blue may be combined. Note that the stacked structure of the light-emitting layer 113 is not limited to the above structure. For example, multiple light-emitting layers having the same light-emitting color may be stacked in the light-emitting layer 113. For example, a first light-emitting layer containing a light-emitting substance that exhibits blue and a second light-emitting layer containing a light-emitting substance that exhibits blue may be stacked with or without a layer containing a charge-transporting material therebetween. When multiple light-emitting layers having the same light-emitting color are stacked, the reliability can sometimes be improved compared to a single layer. In addition, in the case of Figure 2B a series structure as shown, when there are multiple light-emitting layers, each light-emitting layer also has a structure sequentially stacked as described above from the anode side. In addition, when the first electrode 101 is a cathode and the second electrode 102 is an anode, the stacking order of the organic compound layer 103 is reversed. Specifically, 111 on the first electrode 101 of the cathode is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0103] The light-emitting layer 113 in the organic compound layers (103, 103a, 103b) appropriately combines a light-emitting substance and multiple substances to obtain fluorescence emission or phosphorescence emission that exhibits a desired light-emitting color. In addition, the light-emitting layer 113 may have a stacked structure with different light-emitting colors. In this case, different materials may be used as the light-emitting substance and other substances for each light-emitting layer to be stacked. In addition, a structure in which different light-emitting colors are obtained from Figure 2B the multiple organic compound layers (103a, 103b) shown may be adopted. In this case, different materials may be used as the light-emitting substance and other substances for each light-emitting layer.

[0104] In addition, in a light-emitting device according to one embodiment of the present invention, for example, by making Figure 2CWhen the first electrode 101 shown is a reflective electrode, the second electrode 102 is a semi-transmissive - semi-reflective electrode, and an optical microcavity resonator (microcavity) structure is adopted, the light emitted from the light-emitting layer 113 in the organic compound layer 103 can resonate between the two electrodes, thereby enhancing the light emitted from the second electrode 102. Thus, high definition can be easily achieved. In addition, since the light emission intensity in the front direction of a specific wavelength can be enhanced, low power consumption can be achieved.

[0105] When the first electrode 101 of the light-emitting device is a reflective electrode composed of a laminated structure of a conductive material having reflectivity and a conductive material having translucency (transparent conductive film), optical adjustment can be performed by adjusting the thickness of the transparent conductive film. Specifically, it is preferably adjusted in the following manner: when the wavelength of the light obtained from the light-emitting layer 113 is λ, the optical distance (the product of the thickness and the refractive index) between the first electrode 101 and the second electrode 102 is mλ / 2 (note that m is an integer of 1 or more) or a value near it.

[0106] In addition, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferably adjusted in the following manner: the optical distance from the first electrode 101 to the region (light-emitting region) in the light-emitting layer 113 where the desired light can be obtained and the optical distance from the second electrode 102 to the region (light-emitting region) in the light-emitting layer 113 where the desired light can be obtained both become (2m'+1)λ / 4 (note that m' is an integer of 1 or more) or a value near it. Note that the "light-emitting region" described here refers to the recombination region of holes and electrons in the light-emitting layer 113.

[0107] By performing the above optical adjustment, the spectrum of a specific monochromatic light that can be obtained from the light-emitting layer 113 can be narrowed, thereby obtaining light emission with good color purity.

[0108] In addition, in the above case, strictly speaking, the optical distance between the first electrode 101 and the second electrode 102 can be said to be the total thickness from the reflection region in the first electrode 101 to the reflection region in the second electrode 102. However, since it is difficult to accurately determine the positions of the reflection regions in the first electrode 101 and the second electrode 102, the above effects can be sufficiently obtained by assuming arbitrary positions in the first electrode 101 and the second electrode 102 as the reflection regions. In addition, strictly speaking, the optical distance between the first electrode 101 and the light-emitting layer that can obtain the desired light can be said to be the optical distance between the reflection region in the first electrode 101 and the light-emitting region in the light-emitting layer that can obtain the desired light. However, since it is difficult to accurately determine the reflection region in the first electrode 101 and the light-emitting region in the light-emitting layer that can obtain the desired light, the above effects can be sufficiently obtained by assuming an arbitrary position in the first electrode 101 as the reflection region and an arbitrary position in the light-emitting layer that can obtain the desired light as the light-emitting region.

[0109] Figure 2D The light-emitting device shown is a light-emitting device having a series structure. By adopting a series structure, a light-emitting device capable of high-brightness light emission can be realized. In addition, since the series structure can reduce the current required to obtain the same brightness compared to a single structure, the reliability can be improved. In addition, the power consumption can be reduced.

[0110] Figure 2E The light-emitting device shown is Figure 2B An example of the light-emitting device having a series structure shown, as shown in the accompanying drawings, has a structure in which three organic compound layers (103a, 103b, 103c) sandwich charge generation layers (106a, 106b) and are stacked. The three organic compound layers (103a, 103b, 103c) each include a light-emitting layer (113a, 113b, 113c), and the light-emitting colors of the respective light-emitting layers can be freely combined. For example, the following structure can be adopted: the light-emitting layer 113a emits blue, the light-emitting layer 113b emits any one of red, green, and yellow, and the light-emitting layer 113c emits blue. However, the following structure can also be adopted: the light-emitting layer 113a emits red, the light-emitting layer 113b emits any one of blue, green, and yellow, and the light-emitting layer 113c emits red.

[0111] In addition, in the light-emitting device according to one embodiment of the present invention described above, at least one of the first electrode 101 and the second electrode 102 is a light-transmissive electrode (such as a transparent electrode, a semi-transmissive semi-reflective electrode, etc.). When the light-transmissive electrode is a transparent electrode, the visible light transmittance of the transparent electrode is 40% or more. In addition, when the electrode is a semi-transmissive semi-reflective electrode, the visible light reflectance of the semi-transmissive semi-reflective electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. In addition, the resistivity of these electrodes is preferably 1×10 -2 Ω·cm or less.

[0112] In addition, in the light-emitting device according to one embodiment of the present invention described above, when one of the first electrode 101 and the second electrode 102 is a reflective electrode, the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. In addition, the resistivity of this electrode is preferably 1×10 -2 Ω·cm or less.

[0113] <Specific structure of the light-emitting device> Next, the specific structure of the light-emitting device according to one embodiment of the present invention will be described. In addition, here, a light-emitting device having a series structure will be referred to for Figure 2D description. Note that Figure 2A and Figure 2C the light-emitting device having a single structure shown also adopts the same structure of the organic compound layer. In addition, when the light-emitting device shown in Figure 2D has a microcavity structure, a reflective electrode is formed as the first electrode 101, and a semi-transmissive semi-reflective electrode is formed as the second electrode 102. Thus, the desired electrode material can be used alone or multiple electrode materials can be used to form the above electrodes in a single layer or a stacked layer. In addition, the second electrode 102 is formed by appropriately selecting a material after forming the organic compound layer 103b.

[0114] <Materials of the light-emitting device> <<Light-emitting layer>> The light-emitting layer (113, 113a, 113b) is a layer containing a light-emitting substance. Note that as the light-emitting substance that can be used for the light-emitting layer (113, 113a, 113b), substances that emit light colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red can be appropriately used. In addition, when including multiple light-emitting layers, by using different light-emitting substances in each light-emitting layer, a structure that emits different light colors can be obtained (for example, white light obtained by combining light colors in a complementary color relationship). Furthermore, a stacked structure in which one light-emitting layer contains different light-emitting substances can also be adopted.

[0115] In addition, the light-emitting layer (113, 113a, 113b) may contain one or more organic compounds (host materials, etc.) in addition to the light-emitting substance (guest material).

[0116] Specifically, as the light-emitting layer 113, the structure described in Reference Example 1 may be adopted. Figure 1B In the light-emitting layer 113, the weight ratio of the host material 118 is the largest, and the guest material 119 (phosphorescent compound) is dispersed in the host material 118. It is preferable that the T1 energy level of the host material 118 (organic compounds 118_1 and 118_2) of the light-emitting layer 113 is higher than the T1 energy level of the guest material (guest material 119) of the light-emitting layer 113.

[0117] As the organic compound 118_1, a material with higher electron transportability than hole transportability can be used, and preferably a material with an electron mobility of 1×10 -6 cm 2 / Vs or more. As a material that easily accepts electrons (a material with electron transportability), compounds having a π-deficient heteroaromatic ring skeleton such as nitrogen-containing heteroaromatic compounds and zinc or aluminum metal complexes can be used. Examples of compounds having a π-deficient heteroaromatic ring skeleton include oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, triazine derivatives, and the like. Examples of zinc or aluminum metal complexes include metal complexes having a quinoline ligand, a benzoquinoline ligand, an oxazole ligand, or a thiazole ligand.

[0118] Specifically, metal complexes having a quinoline skeleton or a benzoquinoline skeleton can be cited, such as tris(8-hydroxyquinoline)aluminum(III) (abbreviation: Alq), tris(4-methyl-8-hydroxyquinoline)aluminum(III) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-hydroxyquinoline)(4-phenylphenylphenol)aluminum(III) (abbreviation: BAlq), bis(8-hydroxyquinoline)zinc(II) (abbreviation: Znq), etc. In addition to the above, metal complexes having oxazole or thiazole ligands such as bis[2-(2-benzoxazolyl)phenylphenol]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenylphenol]zinc(II) (abbreviation: ZnBTZ), etc. can also be used. Furthermore, in addition to metal complexes, heterocyclic compounds such as 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 9-[4-(4,5-diphenyl-4H-1,2,4-triazol-3-yl)phenyl]-9H-carbazole (abbreviation: CzTAZ1), 2,2’,2”-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), etc., 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3’-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3’-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II) and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2-[3-(3,9’-bi-9H-carbazol-9-yl)phenyl]dibenzo[f,h]Heterocyclic compounds with a diazine skeleton such as quinoxaline (abbreviation: 2mCzCzPDBq), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), etc.; heterocyclic compounds with a triazine skeleton such as 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), etc.; heterocyclic compounds with a pyridine skeleton such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tris[3-(pyridin-3-yl)phenyl]benzene (abbreviation: TmPyPB), etc.; heteroaromatic compounds such as 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs). Among the above heterocyclic compounds, heterocyclic compounds with a triazine skeleton, a diazine (pyrimidine, pyrazine, pyridazine) skeleton or a pyridine skeleton are stable and have good reliability, so they are preferred. Heterocyclic compounds with this skeleton have high electron transport properties and also help to reduce the driving voltage. In addition, a polymer compound such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used. The substances described here are mainly substances having an electron mobility of 1×10, -6 cm 2 / Vs or more. Note that any substance other than the above can be used as long as its electron transport property is higher than its hole transport property.

[0119] For example, as the organic compound 118_1, an organic compound represented by the following structural formulas (400) to (415) can be used.

[0120] [Chemical formula 14]

[0121] [Chemical formula 15]

[0122] As the organic compound 118_2, a combination that can form an exciplex with the organic compound 118_1 is preferably used. Specifically, a skeleton having a π-electron-rich heteroaromatic ring skeleton or a highly donor-like skeleton such as an aromatic amine skeleton is preferred. As the compound having a π-electron-rich heteroaromatic ring skeleton, heteroaromatic compounds such as dibenzothiophene derivatives, dibenzofuran derivatives, and carbazole derivatives can be mentioned. At this time, the organic compound 118_1, the organic compound 118_2, and the guest material 119 (phosphorescent compound) are preferably selected such that the emission peak of the exciplex formed by the organic compound 118_1 and the organic compound 118_2 overlaps with the absorption band (more specifically, the absorption band at the longest wavelength) of the triplet MLCT (Metal to Ligand Charge Transfer: charge transfer from metal to ligand) transition of the guest material 119 (phosphorescent compound). Thereby, a light-emitting device with significantly improved luminous efficiency can be achieved. Note that in the case of using a thermally activated delayed fluorescence material instead of the phosphorescent compound, the absorption band at the longest wavelength is preferably the absorption band of the singlet state.

[0123] In addition, as the organic compound 118_2, the following hole-transporting materials can be used.

[0124] As the hole-transporting material, a material having higher hole-transporting property than electron-transporting property can be used, and a material having a hole mobility of 1×10 -6 cm 2 / Vs or more is preferably used. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc. can be used. The above hole-transporting materials can also be polymer compounds.

[0125] As the material having high hole-transporting property, specifically, as the aromatic amine compound, N,N'-bis(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), etc. can be mentioned.

[0126] In addition, as carbazole derivatives, specifically, 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), etc. can be cited.

[0127] In addition, as carbazole derivatives, 4,4'-bis(9H-carbazol-9-yl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, etc. can also be cited.

[0128] In addition, as aromatic hydrocarbons, for example, 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthracene, 10,10'-diphenyl-9,9'-bianthracene, 10,10'-bis(2-phenylphenyl)-9,9'-bianthracene, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthracene, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, etc. can be cited. In addition to these, pentacene, coronene, etc. can also be used. As described above, it is more preferable to use those having 1×10 -6 cm 2An aromatic hydrocarbon having a hole mobility of 1 / Vs or more, 14 or more and 42 or less carbon atoms.

[0129] Note that the aromatic hydrocarbon may also have a vinyl skeleton. Examples of the aromatic hydrocarbon having a vinyl skeleton include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA), and the like.

[0130] In addition, a polymer compound such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), or poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD) may also be used.

[0131] In addition, as a material with high hole-transporting properties, for example, 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), 4,4',4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA), 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: m-MTDATA), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), N-(9,9-spirobi[9H-fluorene]-2-yl)-N,N'N'-triphenyl-1,4-phenylenediamine (abbreviation: DPASF), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-bis(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazol-3-yl)amine (abbreviation: PCA1BP), N,N'-bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: PCAFLP(2)), N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-2-amine (abbreviation: PCAFLP(2)-02), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluorene-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(9,9-spirobi[9H-fluorene]-2-yl)-N,9-diphenylcarbazol-3-amine (abbreviation: PCASF), N,N'-diphenyl-N,N'-bis(4-diphenylaminophenyl)spirobi[9H-fluorene]-2,7-diamine (abbreviation: DPA2SF), N-[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F) and other aromatic amine compounds. In addition, 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]phenanthrene (abbreviation: PCPPn), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 9'-phenyl-9'H-9,3':6',9''-tricarbazole (abbreviation: PhCzGI), 2,8-bis(9H-carbazol-9-yl)dibenzothiophene (abbreviation: Cz2DBT), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviation: DBF3P-II), 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), 4-[3-(triphenylene-2-yl)phenyl]dibenzothiophene (abbreviation: mDBTPTp-II), and other amine compounds, carbazole compounds, thiophene compounds, furan compounds, fluorene compounds, triphenylene compounds, phenanthrene compounds, etc. Among the above compounds, compounds having a pyrrole skeleton, a furan skeleton, a thiophene skeleton, and an aromatic amine skeleton are stable and have good reliability, so they are preferred. In addition, compounds having this skeleton have high hole transportability and also help to reduce the driving voltage.,

[0132] As the guest material 119 (phosphorescent compound), iridium, rhodium, platinum-based organometallic complexes or metal complexes can be cited. Among them, platinum complexes are preferred as metal complexes. In addition, platinum complexes having a nitrogen-containing heterocyclic carbene can also be cited. In addition, organoiridium complexes can also be used, such as iridium orthometallic complexes. As the orthometalated ligand, 4H-triazole ligand, 1H-triazole ligand, imidazole ligand, pyridine ligand, pyrimidine ligand, pyrazine ligand or isoquinoline ligand can be cited, etc.

[0133] In addition, as the guest material 119 (phosphorescent compound), it is preferable to select the organic compound 118_1, the organic compound 118_2, and the guest material 119 (phosphorescent compound) such that the LUMO (Lowest Unoccupied Molecular Orbital) energy level is higher than the LUMO energy level of the organic compound 118_1 and the HOMO (Highest Occupied Molecular Orbital) energy level is lower than the HOMO energy level of the organic compound 118_2.

[0134] In addition, as the guest material 119 (phosphorescent compound), it is preferable to select the organic compound 118_1, the organic compound 118_2, and the guest material 119 (phosphorescent compound) such that the LUMO energy level is higher than the LUMO energy level of the organic compound 118_1 and the HOMO energy level is higher than the HOMO energy level of the organic compound 118_2. Thus, a light-emitting device with high luminous efficiency and capable of being driven at a low voltage can be manufactured.

[0135] In addition, as the guest material 119 (phosphorescent compound), the organic compound 118_1 and the guest material 119 (phosphorescent compound) are preferably selected such that the energy difference between the LUMO energy level of the organic compound 118_1 and the HOMO energy level of the guest material 119 (phosphorescent compound) is equal to or greater than the energy calculated from the absorption edge at the longest wavelength in the absorption spectrum of the guest material 119 (phosphorescent compound). Thereby, a light-emitting device with high luminous efficiency and capable of being driven at a low voltage can be manufactured.

[0136] In addition, the absorption edge at the longest wavelength in the absorption spectrum can be obtained from the Tauc curve assuming direct transition by measuring the absorption spectrum of the target substance in a thin film state or in a thin film doped with the target substance in a matrix material. Alternatively, the absorption edge can be calculated by the following method: measuring the absorption spectrum of a solution of the target substance, drawing a tangent line at half the long-wavelength side of the peak or shoulder peak observed at the longest wavelength in the absorption spectrum, and calculating from the intersection of this tangent line with the horizontal axis (wavelength) or the baseline. There is no particular limitation on the solvent of the solution, but solvents with relatively low polarity such as toluene and chloroform are preferably used.

[0137] Note that the values of the HOMO energy level and the LUMO energy level used in this specification can be calculated by electrochemical measurement. As typical examples of electrochemical measurement, cyclic voltammetry (CV) measurement, differential pulse voltammetry (DPV) measurement, etc. can be cited.

[0138] In cyclic voltammetry (CV) measurement, the values of the HOMO energy level and the LUMO energy level (E) can be calculated based on the oxidation peak potential (E pa ) and the reduction peak potential (E pc ) obtained by changing the potential of the working electrode relative to the reference electrode. In the measurement, the HOMO energy level is calculated from the potential scan in the positive direction, and the LUMO energy level is calculated from the potential scan in the negative direction. In addition, the scan rate in the measurement is 0.1 V / s.

[0139] Describe the specific calculation methods of the HOMO energy level and the LUMO energy level. The standard redox potential (E pa ) is calculated from the oxidation peak potential (E pc ) and the reduction peak potential (E o ) obtained from the cyclic voltammogram of the material (=(E pa +E pc ) / 2). By subtracting this standard redox potential (E x ) from the potential energy (E o ) of the reference electrode relative to the vacuum energy level, the values of the HOMO energy level and the LUMO energy level (E) can be calculated respectively (=E x -E o)。

[0140] Note that the above shows the case of obtaining a reversible redox wave. In the case of obtaining an irreversible redox wave, the value obtained by subtracting a certain value (0.1 eV) from the oxidation peak potential (E pa ) is assumed to be the reduction peak potential (E pc ), and the standard redox potential (E o ) with one decimal place is calculated. Thereby, the HOMO energy level is calculated. In addition, the value obtained by adding a certain value (0.1 eV) to the reduction peak potential (E pc ) is assumed to be the oxidation peak potential (E pa ), and the standard redox potential (E o ) with one decimal place is calculated. Thereby, the LUMO energy level is calculated.

[0141] In addition, as substances having an emission peak in the blue or green wavelength region, examples thereof include tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: Ir(mpptz-dmp)3), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazole)iridium(III) (abbreviation: Ir(Mptz)3), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviation: Ir(iPrptz-3b)3), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviation: Ir(iPr5btz)3) and other organometallic iridium complexes having a 4H-triazole skeleton; tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazole]iridium(III) (abbreviation: Ir(Mptz1-mp)3), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazole)iridium(III) (abbreviation: Ir(Prptz1-Me)3) and other organometallic iridium complexes having a 1H-triazole skeleton; fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: Ir(iPrpmi)3), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: Ir(dmpimpt-Me)3) and other organometallic iridium complexes having an imidazole skeleton; and bis[2-(4’,6’-difluorophenyl)pyridinato-N,C2’]iridium(III) tetra(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4’,6’-difluorophenyl)pyridinato-N,C2’]iridium(III) pyridinecarboxylate (abbreviation: FIrpic), bis{2-[3’,5’-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}iridium(III) pyridinecarboxylate (abbreviation: Ir(CF3ppy)2(pic)), bis[2-(4’,6’-difluorophenyl)pyridinato-N,C 2’Organic metal iridium complexes such as iridium(III) acetylacetonate (abbreviation: FIr(acac)) with phenylpyridine derivatives having an electron-withdrawing group as ligands, organic platinum complexes such as (2-{3-[3-(3,5-di-tert-butylphenyl)benzimidazol-1-yl-2-ylidene-κC2]phenoxy-κC2}-9-(4-tert-butyl-2-pyridyl-κN)carbazole-2,1-diyl-κC1)platinum(II) (abbreviation: PtON-TBBI), etc. Among the above metal complexes, organic metal iridium complexes or organic platinum complexes having a nitrogen-containing five-membered heterocyclic skeleton such as a 4H-triazole skeleton, a 1H-triazole skeleton, and an imidazole skeleton have a very high triplet excitation energy and have good reliability or luminous efficiency, and are therefore particularly preferred.

[0142] As substances having a luminescence peak in the green or yellow wavelength region, for example, tris(4-methyl-6-phenylpyrimidine)iridium(III) (abbreviation: Ir(mppm)3), tris(4-tert-butyl-6-phenylpyrimidine)iridium(III) (abbreviation: Ir(tBuppm)3), (acetylacetonato)bis(6-methyl-4-phenylpyrimidine)iridium(III) (abbreviation: Ir(mppm)2(acac)), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidine)iridium(III) (abbreviation: Ir(tBuppm)2(acac)), (acetylacetonato)bis[4-(2-norbornanyl)-6-phenylpyrimidine]iridium(III) (abbreviation: Ir(nbppm)2(acac)), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidine]iridium(III) (abbreviation: Ir(mpmppm)2(acac)), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation: Ir(dmppm-dmp)2(acac)), (acetylacetonato)bis(4,6-diphenylpyrimidine)iridium(III) (abbreviation: Ir(dppm)2(acac)) and other organic metal iridium complexes having a pyrimidine skeleton, (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazine)iridium(III) (abbreviation: Ir(mppr-Me)2(acac)), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazine)iridium(III) (abbreviation: Ir(mppr-iPr)2(acac)) and other organic metal iridium complexes having a pyrazine skeleton, tris(2-phenylpyridine-N,C 2 ’)iridium(III) (abbreviation: Ir(ppy)3), bis(2-phenylpyridinato-N,C 2’Iridium(III) acetylacetonate (abbreviation: Ir(ppy)2(acac)), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: Ir(bzq)2(acac)), tris(benzo[h]quinolinato)iridium(III) (abbreviation: Ir(bzq)3), tris(2-phenylquinolinato-N,C 2＇ )iridium(III) (abbreviation: Ir(pq)3), bis(2-phenylquinolinato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: Ir(pq)2(acac)) and other organometallic iridium complexes having a pyridine skeleton, bis(2,4-diphenyl-1,3-oxazolato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: Ir(dpo)2(acac)), bis{2-[4'-(perfluorophenyl)phenyl]pyridinato-N,C 2’}iridium(III) acetylacetonate (abbreviation: Ir(p-PF-ph)2(acac)), bis(2-phenylbenzothiazolato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: Ir(bt)2(acac)) and other organometallic iridium complexes, tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: Tb(acac)3(Phen)) and other rare earth organometallic complexes. Among the above metal complexes, organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because of their good reliability or luminescence efficiency.

[0143] In addition, as substances having a luminescence peak in the yellow or red wavelength region, for example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: Ir(5mdppm)2(dibm)), bis[4,6-bis(3-methylphenyl)pyrimidinato](dineopentanoylmethanato)iridium(III) (abbreviation: Ir(5mdppm)2(dpm)), bis[4,6-bis(naphthalen-1-yl)pyrimidinato](dineopentanoylmethanato)iridium(III) (abbreviation: Ir(d1npm)2(dpm)) and other organometallic iridium complexes having a pyrimidine skeleton; (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: Ir(tppr)2(acac)), bis(2,3,5-triphenylpyrazinato)(dineopentanoylmethanato)iridium(III) (abbreviation: Ir(tppr)2(dpm)), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: Ir(Fdpq)2(acac)) and other organometallic iridium complexes having a pyrazine skeleton; tris(1-phenylisoquinolinato-N,C 2’ )iridium(III) (abbreviation: Ir(piq)3), bis(1-phenylisoquinolinato-N,C 2’)Organic metal iridium complexes with a pyridine skeleton such as iridium(III) acetylacetonate (abbreviation: Ir(piq)2(acac)); platinum complexes such as platinum(II) 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin (abbreviation: PtOEP); and rare earth organic metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: Eu(DBM)3(Phen)), tris[1-(2-thiophenecarbonyl)-3,3,3-trifluoroacetone](monophenanthroline)europium(III) (abbreviation: Eu(TTA)3(Phen)). Among the above metal complexes, the organic metal iridium complexes with a pyrimidine skeleton are particularly preferred because of their good reliability or luminescence efficiency. In addition, the organic metal iridium complexes with a pyrazine skeleton can provide red luminescence with good chromaticity.

[0144] As the light-emitting material contained in the light-emitting layer 113, a material capable of converting triplet excitation energy into light emission can be used. As the material capable of converting triplet excitation energy into light emission, in addition to phosphorescent compounds, thermally activated delayed fluorescence (TADF) materials can be cited. Therefore, the description of phosphorescent compounds can be regarded as the description of thermally activated delayed fluorescence materials. Note that the thermally activated delayed fluorescence material refers to a material in which the energy difference between the triplet excitation level and the singlet excitation level is small and has the function of converting energy from the triplet excitation state to the singlet excitation state through reverse intersystem crossing. Therefore, the triplet excitation state can be upconverted to the singlet excitation state (reverse intersystem crossing) by a small amount of thermal energy and the light emission (fluorescence) from the singlet excitation state can be efficiently presented. In addition, the conditions for efficiently obtaining thermally activated delayed fluorescence are as follows: the energy difference between the triplet excitation level and the singlet excitation level is greater than 0 eV and 0.2 eV or less, preferably greater than 0 eV and 0.1 eV or less.

[0145] When the thermally activated delayed fluorescence material is composed of one material, for example, the following materials can be used.

[0146] First, derivatives such as fullerenes, acridine derivatives such as proflavine, eosin, etc. can be cited. In addition, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc. can be cited. As such metal-containing porphyrins, for example, protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), octaethylporphyrin-platinum chloride complex (PtCl2OEP), etc. can also be cited.

[0147] In addition, as a thermally activated delayed fluorescence material composed of one kind of material, a heterocyclic compound having a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring can also be used. Specifically, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[acridine-9,9’-anthracene]-10’-one (abbreviation: ACRSA), etc. can be cited. Since the heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, it has high electron transportability and hole transportability, and thus is preferred. In particular, in the skeleton having a π-electron-deficient heteroaromatic ring, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton) or a triazine skeleton is stable and has good reliability, and thus is preferred. In addition, in the skeleton having a π-electron-rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a thiophene skeleton, a furan skeleton, and a pyrrole skeleton are stable and have good reliability, and thus it is preferred to have any one or more of these skeletons. As the pyrrole skeleton, an indole skeleton, a carbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferably used. In addition, in a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded, the donor property of the π-electron-rich heteroaromatic ring and the acceptor property of the π-electron-deficient heteroaromatic ring are both strong, and the difference between the singlet excitation energy level and the triplet excitation energy level becomes small, and thus it is particularly preferred.

[0148] For example, as the luminescent substance, an organic compound represented by the following structural formulas (500) to (511) can be used.

[0149] [Chemical formula 16]

[0150] The light-emitting layer 113 may also be formed of two or more layers. For example, in the case where the first light-emitting layer and the second light-emitting layer are sequentially stacked from the hole-transporting layer side to form the light-emitting layer 113, a material having hole-transporting properties may be used as the host material of the first light-emitting layer, and a material having electron-transporting properties may be used as the host material of the second light-emitting layer. In addition, the light-emitting materials included in the first light-emitting layer and the second light-emitting layer may be the same or different materials, and may be materials having the function of emitting light of the same color or materials having the function of emitting light of different colors from each other. By using light-emitting materials having the function of emitting light of different colors from each other for the two light-emitting layers, multiple emissions can be obtained simultaneously. In particular, it is preferable to select the light-emitting materials for each light-emitting layer so that white light emission can be obtained by combining the light emitted from the two light-emitting layers.

[0151] In addition, materials other than the host material 118 and the guest material 119 may also be included in the light-emitting layer 113.

[0152] In addition, a material that exhibits fluorescence emission (fluorescent emission material) may be used for the light-emitting layer. At this time, the excitation energy of the phosphorescent emission material in the light-emitting layer moves to the fluorescent emission material, thereby obtaining light emission. Since the fluorescent emission material allows the transition from the singlet excited state to the singlet ground state, the excitation lifetime (light emission lifetime) is shorter than that of the phosphorescent emission material. Thus, when a fluorescent emission material is also used for the light-emitting layer, a light-emitting device that is stable and has good reliability can be manufactured.

[0153] Examples of the fluorescent emission material include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, etc. A fluorescent emission material having a singlet excitation energy level and a triplet excitation energy level lower than the triplet excitation energy level of the phosphorescent emission material may be used.

[0154] As specific examples, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenyldistyrene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyl-di-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,N,N',N',N'',N'',N''',N''' - octaphenyldibenzo[g,p] -2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N,N'-diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), N,N'-diphenyl-N,N'-bis[(9-phenyl-9H-carbazol-2-yl)]naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc.

[0155] In addition, 5,9-diphenyl-5,9-diaza-13b-boraphenanthro[3,2,1-de]anthracene (abbreviation: DABNA1), 9-[(1,1'-diphenyl)-3-yl]-N,N,5,11-tetraphenyl-5,9-dihydro-5,9-diaza-13b-boraphenanthro(3,2,1-de)anthracen-3-amine (abbreviation: DABNA2), 2,12-bis(tert-butyl)-5,9-bis(4-tert-butylphenyl)-N,N-diphenyl-5H,9H-[1,4]benzazaborolo[2,3,4-kl]phenazaborole-7-amine (abbreviation: DPhA-tBu4DABNA), 2,12-bis(tert-butyl)-N,N,5,9-tetrakis(4-tert-butylphenyl)-5H,9H-[1,4]benzazaborolo[2,3,4-kl]benzazaborolo-7-amine (abbreviation: tBuDPhA-tBu4DABNA), 2,12-bis(tert-butyl)-5,9-bis(4-tert-butylphenyl)-7-methyl-5H,9H-[1,4]benzazaborolo[2,3,4-kl]phenazaborole (abbreviation: Me-tBu4DABNA), N 7 , N 7 , N 13 , N13,5,9,11,15-octaphenyl-5H,9H,11H,15H-[1,4]benzazaborolo[2,3,4-kl][1,4]benzazaborolo[4',3',2':4,5][1,4]benzazaborolo[3,2-b]phenazaborole-7,13-diamine (abbreviation: ν-DABNA), 2-(4-tert-butylphenyl)benzo[5,6]indolo[3,2,1-jk]benzo[b]carbazole (abbreviation: tBuPBibc), etc., which are fused heteroaromatic compounds containing nitrogen and boron, especially compounds with a diaza-boraphenanthrene skeleton, have a narrow emission spectrum and can obtain blue light emission with good color purity, and thus can be appropriately used.

[0156] In addition to the above, 9,10,11-tris[3,6-bis(1,1-dimethylethyl)-9H-carbazol-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborolo[2,3,4-kl]phenazaborole (abbreviation: BBCz-G), 9,11-bis[3,6-bis(1,1-dimethylethyl)-9H-carbazol-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborolo[2,3,4-kl]phenazaborole (abbreviation: BBCz-Y), etc. can also be appropriately used.

[0157] In addition, as the luminescent material contained in the light-emitting layer, a thermally activated delayed fluorescence (TADF) material can be used. As the thermally activated delayed fluorescence material, a heterocyclic compound having a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring can be used. As specific examples, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridin)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[acridine-9,9’-anthracene]-10’-one (abbreviation: ACRSA), etc. can be cited. Since the heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, it has high electron transportability and hole transportability, and thus is preferred. In particular, in the skeleton having a π-electron-deficient heteroaromatic ring, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton) or a triazine skeleton is stable and has good reliability, and thus is preferred. In addition, in the skeleton having a π-electron-rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a thiophene skeleton, a furan skeleton, and a pyrrole skeleton are stable and have good reliability, and thus it is preferred to have any one or more selected from these skeletons. As the pyrrole skeleton, an indole skeleton, a carbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferably used. In addition, in a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded, both the donor property of the π-electron-rich heteroaromatic ring and the acceptor property of the π-electron-deficient heteroaromatic ring are strong, and the difference between the singlet excitation energy level and the triplet excitation energy level becomes small, and thus it is particularly preferred. In addition, the above compound having a diaza-boradiazaindacene skeleton has the function of a thermally activated delayed fluorescence material and can obtain blue light emission with good color purity, and thus is preferred.

[0158] In addition, a thermally activated delayed fluorescence material can be used instead of the phosphorescent substance. In the thermally activated delayed fluorescence material, the difference between the triplet excited energy level and the singlet excited energy level is small, so it has the function of converting energy from the triplet excited state to the singlet excited state through reverse intersystem crossing. Therefore, the triplet excited state can be converted (up-converted) to the singlet excited state (reverse intersystem crossing) by a small amount of thermal energy, and the luminescence (fluorescence) from the singlet excited state can be efficiently presented. In addition, the conditions for efficiently obtaining thermally activated delayed fluorescence are as follows: the energy difference between the triplet excited energy level and the singlet excited energy level is greater than 0 eV and 0.2 eV or less, preferably greater than 0 eV and 0.1 eV or less.

[0159] In addition, a method such as evaporation coating (including vacuum evaporation coating), inkjet method, coating method, gravure printing, etc. can be used to form the light-emitting layer 113. In addition, in addition to the above materials, inorganic compounds such as quantum dots or polymer compounds (oligomers, dendrimers, polymers, etc.) can also be included.

[0160] <<Hole injection layer>> The hole injection layers (111, 111a, 111b) are layers for injecting holes from the first electrode 101 of the anode and the charge generation layers (106, 106a, 106b) into the organic compound layers (103, 103a, 103b), and are layers containing an organic acceptor material and a material with high hole injection properties.

[0161] The hole injection layers (111, 111a, 111b) have the function of reducing the injection barrier of holes from one of the pair of electrodes (the first electrode 101 or the second electrode 102) to promote hole injection, and are formed using, for example, transition metal oxides, phthalocyanine derivatives, or aromatic amines. Examples of the transition metal oxide include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, etc. Examples of the phthalocyanine derivative include phthalocyanine or metal phthalocyanine, etc. Examples of the aromatic amine include benzidine derivatives or phenylenediamine derivatives, etc. In addition, polymer compounds such as polythiophene or polyaniline can also be used. Typically, poly(ethylenedioxythiophene) / polystyrene sulfonic acid, which is a self-doped polythiophene, etc.

[0162] As the hole injection layer (111, 111a, 111b), a layer made of a composite material composed of a hole transporting material and a material having the property of receiving electrons from the hole transporting material can be used. Alternatively, a laminate of a layer containing a material exhibiting electron accepting property and a layer containing a hole transporting material can also be used. In a steady state or in a state where an electric field exists, the transfer of charges can occur between these materials. As the material exhibiting electron accepting property, organic acceptors such as quinodimethane derivatives, tetrachlorobenzoquinone derivatives, or hexaazatriphenylene derivatives can be cited. Specifically, compounds having an electron-withdrawing group (halogen group or cyano group) such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloroquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN) can be cited. In addition, transition metal oxides, for example, oxides of metals in Groups 4 to 8 can also be used. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, etc. can be used. Molybdenum oxide is particularly preferably used because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle.

[0163] As the hole transporting material, a material having a higher hole transporting property than electron transporting property can be used, and a material having a hole mobility of 1×10 -6 cm 2 / Vs or more is preferably used. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, etc., which are cited as hole transporting materials that can be used for the light emitting layer 113, can be used. The above hole transporting material can also be a high molecular compound.

[0164] <<Hole Transporting Layer>> The hole transporting layer (112, 112a, 112b) is a layer containing a hole transporting material, and the hole transporting materials exemplified as the materials for the hole injection layer (111, 111a, 111b) can be used. The hole transporting layer (112, 112a, 112b) has a function of transporting the holes injected into the hole injection layer (111, 111a, 111b) to the light emitting layer (113, 113a, 113b), so it preferably has a HOMO energy level that is the same as or close to the HOMO energy level of the hole injection layer (111, 111a, 111b).

[0165] In addition, the above hole transporting material preferably has a hole mobility of 1×10 -6 cm 2A material with a hole mobility of / Vs or higher. However, as long as the material has higher hole transportability than electron transportability, materials other than the above-mentioned materials can be used. In addition, the layer including the material with high hole transportability is not limited to a single layer, and two or more layers composed of the above-mentioned materials can also be stacked.

[0166] <<Electron transport layer>> The electron transport layer (114, 114a, 114b) has the function of transporting electrons injected through the electron injection layer (115, 115a, 115b) from the other of the pair of electrodes (the first electrode 101 or the second electrode 102) to the light-emitting layer 113. As the electron transport material, a material with higher electron transportability than hole transportability can be used, and a material with an electron mobility of 1×10 -6 cm 2 / Vs or higher is preferably used. As a compound that easily accepts electrons (a material with electron transportability), a compound having a π-deficient heteroaromatic ring skeleton such as a nitrogen-containing heteroaromatic compound or a metal complex can be used. Specifically, metal complexes including quinoline ligands, benzoquinoline ligands, oxazole ligands, or thiazole ligands, which are cited as electron transport materials that can be used in the light-emitting layer 113, can be mentioned. In addition, oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, triazine derivatives, etc. can also be mentioned. In addition, a material with an electron mobility of 1×10 -6 cm 2 / Vs or higher is preferably used. As long as the material has higher electron transportability than hole transportability, materials other than the above-mentioned materials can be used. In addition, the electron transport layer (114, 114a, 114b) is not limited to a single layer, and two or more layers composed of the above-mentioned materials can also be stacked.

[0167] In addition, a layer for controlling the movement of electron carriers can be provided between the electron transport layer (114, 114a, 114b) and the light-emitting layer (113, 113a, 113b). This layer is a layer in which a small amount of a substance with high electron capture ability is added to the above-mentioned material with high electron transportability. By suppressing the movement of electron carriers, the carrier balance can be adjusted. Such a structure has a great effect on suppressing problems caused by electrons passing through the light-emitting layer (such as a decrease in the element lifetime).

[0168] <<Electron injection layer>> The electron injection layer (115, 115a, 115b) has the function of reducing the injection barrier of electrons from the second electrode 102 to promote electron injection. For example, Group 1 metals, Group 2 metals, or their oxides, halides, carbonates, etc. can be used. In addition, a composite material of the above-mentioned electron transporting material and a material having the property of supplying electrons to the electron transporting material can also be used. Examples of the material having an electron-donating property include Group 1 metals, Group 2 metals, or their oxides. Specifically, lithium fluoride (LiF), sodium fluoride (NaF), cesium fluoride (CsF), calcium fluoride (CaF2), and lithium oxide (LiO x ) and other alkali metals, alkaline earth metals, or compounds of these metals can be used. In addition, rare earth metal compounds such as erbium fluoride (ErF3) can be used. In addition, an electron salt can also be used for the electron injection layer 115. As this electron salt, for example, a substance that adds electrons to a mixed oxide of calcium and aluminum at a high concentration can be cited. In addition, a substance that can be used for the electron transport layer (114, 114a, 114b) can also be used for the electron injection layer (115, 115a, 115b).

[0169] In addition, a composite material formed by mixing an organic compound and an electron donor can also be used for the electron injection layer (115, 115a, 115b). Since this composite material generates electrons in the organic compound through the electron donor, it has good electron injection properties and electron transport properties. In this case, the organic compound is preferably a material with good performance in transporting the generated electrons. Specifically, for example, the materials constituting the electron transport layer 114 (metal complexes or heteroaromatic compounds, etc.) described above can be used. As the electron donor, any substance that exhibits electron-donating properties to the organic compound can be used. Specifically, alkali metals, alkaline earth metals, or rare earth metals are preferably used, and examples include lithium, sodium, cesium, magnesium, calcium, erbium, ytterbium, etc. In addition, alkali metal oxides or alkaline earth metal oxides are preferably used, and examples include lithium oxide, calcium oxide, barium oxide, etc. In addition, Lewis bases such as magnesium oxide can also be used. In addition, organic compounds such as tetrathiafulvalene (abbreviation: TTF) can also be used.

[0170] In addition, the above-mentioned light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer can all be formed by methods such as evaporation (including vacuum evaporation), inkjet printing, coating, gravure printing, etc. In addition, as the above-mentioned light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer, in addition to the above materials, inorganic compounds such as quantum dots or polymer compounds (oligomers, dendrimers, polymers, etc.) can also be used.

[0171] As quantum dots, colloidal quantum dots, alloy-type quantum dots, core-shell type quantum dots, core-type quantum dots, etc. can be used. In addition, quantum dots containing element groups of Group 2 and Group 16, Group 13 and Group 15, Group 13 and Group 17, Group 11 and Group 17, or Group 14 and Group 15 can also be used. Alternatively, quantum dots containing elements such as cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), phosphorus (P), indium (In), tellurium (Te), lead (Pb), gallium (Ga), arsenic (As), aluminum (Al), etc. can be used.

[0172] <> The first electrode 101 and the second electrode 102 are used as the anode or cathode of the light-emitting device. The first electrode 101 and the second electrode 102 can be formed using metals, alloys, conductive compounds, and their mixtures or laminates, etc.

[0173] One of the first electrode 101 and the second electrode 102 is preferably formed using a conductive material having a function of reflecting light. As such a conductive material, aluminum (Al) or an alloy containing Al, etc. can be mentioned. As an alloy containing Al, an alloy containing Al and L (L represents one or more of titanium (Ti), neodymium (Nd), nickel (Ni), and lanthanum (La)), etc. can be mentioned. For example, it is an alloy containing Al and Ti or an alloy containing Al, Ni, and La, etc. Aluminum has a low resistivity and a high light reflectivity. In addition, since aluminum is abundantly contained in the earth's crust and is not expensive, using aluminum can reduce the manufacturing cost of the light-emitting device. In addition, silver (Ag), an alloy containing Ag and N (N represents one or more of yttrium (Y), Nd, magnesium (Mg), ytterbium (Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In), tungsten (W), manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd), iridium (Ir), and gold (Au)), etc. can also be used. As an alloy containing silver, for example, the following alloys can be mentioned: an alloy containing silver, palladium, and copper; an alloy containing silver and copper; an alloy containing silver and magnesium; an alloy containing silver and nickel; an alloy containing silver and gold; and an alloy containing silver and ytterbium, etc. In addition to the above materials, transition metals such as tungsten, chromium (Cr), molybdenum (Mo), copper, and titanium can be used.

[0174] In addition, the light obtained from the light-emitting layer is extracted through one or both of the first electrode 101 and the second electrode 102. Thus, at least one of the first electrode 101 and the second electrode 102 is preferably formed using a conductive material having a function of transmitting light. As such a conductive material, a conductive material having a visible light transmittance of 40% or more and 100% or less, preferably 60% or more and 100% or less, and a resistivity of 1×10 -2 Ω·cm or less can be mentioned.

[0175] In addition, the first electrode 101 and the second electrode 102 are preferably formed of a conductive material having a function of transmitting light and a function of reflecting light. As such a conductive material, a conductive material having a visible light reflectance of 20% or more and 80% or less, preferably 40% or more and 70% or less, and a resistivity of 1×10 -2 Ω·cm or less can be cited. For example, one or more of a conductive metal, an alloy, and a conductive compound can be used. Specifically, indium tin oxide (Indium Tin Oxide, hereinafter referred to as ITO), indium tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium zinc oxide, indium tin oxide containing titanium, indium titanium oxide, indium oxide containing tungsten oxide and zinc oxide, and other metal oxides. In addition, a metal film having a thickness that allows light to pass through (preferably a thickness of 1 nm or more and 30 nm or less) can be used. As the metal, for example, Ag can be used. In addition, as the alloy, alloys such as Ag and Al, Ag and Mg, Ag and Au, and Ag and Yb can be used.

[0176] Note that in this specification and the like, as a material having a light-transmitting function, a material having a function of transmitting visible light and having conductivity can be used. For example, there are oxide conductors, oxide semiconductors, or organic conductors containing organic substances represented by the above-mentioned ITO (Indium Tin Oxide). As an organic conductor containing an organic substance, for example, a composite material containing a mixed organic compound and an electron donor (donor), a composite material containing a mixed organic compound and an electron acceptor (acceptor), and the like can be cited. In addition, inorganic carbon materials such as graphene can also be used. In addition, the resistivity of this material is preferably 1×10 5 Ω·cm or less, and more preferably 1×10 4 Ω·cm or less.

[0177] In addition, one or both of the first electrode 101 and the second electrode 102 can be formed by laminating a plurality of the above materials.

[0178] In order to improve the light extraction efficiency, a material having a refractive index higher than that of the electrode and having a function of transmitting light can be formed in contact with the electrode. As such a material, as long as it has a function of transmitting visible light, it can be either a conductive material or a non-conductive material. For example, in addition to the above-mentioned oxide conductors, oxide semiconductors and organic substances can also be cited. As organic substances, for example, the materials exemplified as the light-emitting layer, hole injection layer, hole transport layer, electron transport layer or electron injection layer can be cited. In addition, inorganic carbon materials or metal thin films having a thickness that allows light to pass through can also be used, and multiple layers having a thickness of several nm to several tens of nm can also be laminated.

[0179] When the first electrode 101 or the second electrode 102 is used as the cathode, a material having a small work function (3.8 eV or less) is preferably used. For example, elements belonging to Group 1 or Group 2 of the periodic table (e.g., alkali metals such as lithium, sodium, and cesium, alkaline earth metals such as calcium or strontium, magnesium, etc.), alloys containing the above elements (e.g., Ag and Mg or Al and Li), rare earth metals such as europium (Eu) or ytterbium (Yb), alloys containing the above rare earth metals, alloys containing aluminum and silver, etc. can be used.

[0180] When the first electrode 101 or the second electrode 102 is used as the anode, a material having a large work function (4.0 eV or more) is preferably used.

[0181] The first electrode 101 and the second electrode 102 can also be a laminate of a conductive material having a function of reflecting light and a conductive material having a function of transmitting light. In this case, the first electrode 101 and the second electrode 102 have a function of adjusting the optical distance so that the desired light from each light-emitting layer resonates to enhance the light of its wavelength, so it is preferable.

[0182] As a film-forming method for the first electrode 101 and the second electrode 102, a sputtering method, evaporation method, printing method, coating method, MBE (Molecular Beam Epitaxy) method, CVD method, pulsed laser deposition method, ALD (Atomic Layer Deposition) method, etc. can be appropriately used.

[0183] <<Charge Generation Layer>> The charge generation layer 106 has the following functions: when a voltage is applied between the first electrode 101 (anode) and the second electrode 102 (cathode), it has the function of injecting electrons into the organic compound layer 103a and injecting holes into the organic compound layer 103b. The charge generation layer 106 may have a structure in which an electron acceptor (acceptor) is added to a hole-transporting material of an organic compound (also referred to as a P-type layer), or may have a structure in which an electron donor (donor) is added to an electron-transporting material (also referred to as an electron injection buffer layer). Alternatively, these two structures may be laminated. Furthermore, an electron relay layer may be provided between the P-type layer and the electron injection buffer layer. Note that by forming the charge generation layer 106 using the above materials, an increase in the driving voltage caused when laminating the organic compound layer including the light-emitting layer can be suppressed.

[0184] In the case where the charge generation layer 106 has a structure (P-type layer) in which an electron acceptor is added to a hole-transporting material of an organic compound, the materials shown in this embodiment can be used as the hole-transporting material. In addition, as the electron acceptor, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloroquinone, etc. can be cited. In addition, oxides of metals belonging to Groups 4 to 8 of the periodic table can be cited. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, etc. can be cited. In addition, the above acceptor materials can also be used. In addition, a mixed film obtained by mixing the materials constituting the P-type layer can be used, or single films containing each material can be laminated.

[0185] In the case where the charge generation layer 106 has a structure (electron injection buffer layer) in which an electron donor is added to an electron-transporting material, the materials shown in this embodiment can be used as the electron-transporting material. In addition, as the electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Groups 2 or 13 of the periodic table and their oxides or carbonates can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li2O), cesium carbonate, etc. are preferably used. In addition, an organic compound such as tetrathianaphthacene can also be used as the electron donor.

[0186] When an electron relay layer is provided between the P-type layer and the electron injection buffer layer in the charge generation layer 106, the electron relay layer contains at least a substance having electron transport properties and has a function of preventing the interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. The LUMO energy level of the substance having electron transport properties contained in the electron relay layer is preferably located between the LUMO energy level of the acceptor substance in the P-type layer and the LUMO energy level of the substance having electron transport properties contained in the electron transport layer in contact with the charge generation layer 106. The specific value of the LUMO energy level of the substance having electron transport properties in the electron relay layer is preferably -5.0 eV or more, more preferably -5.0 eV or more and -3.0 eV or less. In addition, as the substance having electron transport properties in the electron relay layer, a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.

[0187] Although Figure 2D A structure in which two organic compound layers 103 are stacked is shown, but a stacked structure of an organic compound layer including three or more light-emitting layers can also be adopted by providing a charge generation layer between different light-emitting layers.

[0188] <<Cover layer>> Note that although not shown in FIG. 2A to FIG. 2E a cover layer can also be provided on the second electrode 102 of the light-emitting device. For example, a material having a high refractive index can be used for the cover layer. By providing a cover layer on the second electrode 102, the extraction efficiency of the light emitted from the second electrode 102 can be improved.

[0189] Specific examples of the material that can be used for the cover layer include 5,5'-diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviation: BisBTc), 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviation: DBT3P-II), etc. In addition, the organic compounds described in Embodiment 1 can be used.

[0190] <<Substrate>> In addition, the light-emitting device according to one aspect of the present invention can be manufactured on a substrate made of glass, plastic, etc. As the stacking order on the substrate, it can be stacked sequentially from the first electrode 101 side or sequentially from the second electrode 102 side

[0191] In addition, as a substrate for a light-emitting device that can form one mode of the present invention, for example, glass, quartz, plastic, or the like can be used. Alternatively, a flexible substrate can also be used. A flexible substrate is a substrate that can be bent, such as a plastic substrate made of polycarbonate or polyarylate. In addition, a thin film, an inorganic thin film formed by vapor deposition, or the like can be used. Note that as long as it functions as a support during the manufacturing process of the light-emitting device and the optical element, other materials can be used. Alternatively, as long as it has the function of protecting the light-emitting device and the optical element.

[0192] For example, in this specification and the like, various substrates can be used to form a light-emitting device. There is no particular limitation on the type of substrate. As an example of the substrate, for example, a semiconductor substrate (e.g., a single crystal substrate such as a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate having a stainless steel foil, a tungsten substrate, a substrate having a tungsten foil, a flexible substrate, a bonded film, cellulose nanofibers (CNF) containing fibrous materials, paper, or a base film, etc. can be used. As an example of the glass substrate, there are barium borosilicate glass, aluminosilicate glass, soda-lime glass, etc. As examples of the flexible substrate, the bonded film, the base film, etc., the following can be cited. For example, plastics represented by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE) can be cited. Alternatively, as an example, an acrylic resin or the like can be cited. Alternatively, as an example, polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride, etc. can be cited. Alternatively, as an example, resins such as polyamide, polyimide, aromatic polyamide, or epoxy, inorganic vapor deposition films, papers, etc. can be cited.

[0193] In addition, a flexible substrate can also be used as the substrate, and a light-emitting device can be directly formed on the flexible substrate. Alternatively, a release layer can be provided between the substrate and the light-emitting device. The release layer can be used when a part or all of the light-emitting device is manufactured on the release layer and then separated from the substrate and transferred to another substrate. At this time, the light-emitting device can also be transferred to a substrate with low heat resistance or a flexible substrate. In addition, as the above-mentioned release layer, for example, a laminated structure of an inorganic film of a tungsten film and a silicon oxide film and a structure in which a resin film such as polyimide is formed on the substrate can be used.

[0194] That is to say, a substrate can also be used to form a light-emitting device, and then the light-emitting device can be transferred onto another substrate. As examples of the substrate onto which the light-emitting device is transferred, in addition to the above-mentioned substrates, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (including natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or regenerated fibers (acetate fiber, cuprammonium fiber, rayon, regenerated polyester), etc.), a leather substrate, a rubber substrate, etc. can be cited. By using these substrates, a light-emitting device that is not easily damaged, a light-emitting device with high heat resistance, a light-emitting device that achieves weight reduction or a light-emitting device that achieves thinning can be manufactured.

[0195] In addition, a field effect transistor (FET) can also be formed on the above-mentioned substrate, for example, and a light-emitting device can be manufactured on an electrode electrically connected to the FET. Thereby, an active matrix display device that controls the driving of the light-emitting device through the FET can be manufactured.

[0196] In this embodiment, one aspect of the present invention will be described. In addition, one aspect of the present invention will be described in other embodiments. However, one aspect of the present invention is not limited thereto. That is, various aspects of the invention are described in this embodiment and other embodiments, whereby one aspect of the present invention is not limited to a specific aspect. For example, although an example of applying one aspect of the present invention to a light-emitting device is shown, one aspect of the present invention is not limited thereto. For example, depending on the situation or circumstances, one aspect of the present invention may not be applied to a light-emitting device. In addition, although the following example is shown in one aspect of the present invention, the example includes a first organic compound, a second organic compound, and a guest material having a function of converting triplet excitation energy into light emission, the LUMO energy level of the first organic compound is lower than the LUMO energy level of the second organic compound, and the HOMO energy level of the first organic compound is lower than the HOMO energy level of the second organic compound, one aspect of the present invention is not limited thereto. In one aspect of the present invention, depending on the situation or circumstances, for example, the LUMO energy level of the first organic compound may not be lower than the LUMO energy level of the second organic compound. In addition, the HOMO energy level of the first organic compound may not be lower than the HOMO energy level of the second organic compound. In addition, for example, an example in which the first organic compound forms an exciplex with the second compound is shown in one aspect of the present invention, but one aspect of the present invention is not limited thereto. In one aspect of the present invention, depending on the situation or circumstances, for example, the first organic compound and the second organic compound may not form an exciplex. In addition, although the following example is shown in one aspect of the present invention, in this example, the LUMO energy level of the guest material is higher than the LUMO energy level of the first organic compound, and the HOMO energy level of the guest material is lower than the HOMO energy level of the second organic compound, one aspect of the present invention is not limited thereto. In one aspect of the present invention, depending on the situation or circumstances, for example, the LUMO energy level of the guest material may not be higher than the LUMO energy level of the first organic compound. In addition, the HOMO energy level of the guest material may not be lower than the HOMO energy level of the second organic compound.

[0197] The structure shown in this embodiment can be used in appropriate combination with the structure shown in other embodiments.

[0198] Embodiment 3 As Figure 3A and Figure 3B shown, a plurality of light-emitting devices 130 are formed on the insulating layer 175 to constitute a display device. In this embodiment, a display device according to one aspect of the present invention will be described in detail.

[0199] The display device 100 includes a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 includes a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0200] In this specification and the like, sometimes, for example, the name "sub-pixel 110" is used to describe the common content among the sub-pixel 110R, the sub-pixel 110G, and the sub-pixel 110B. In addition, regarding other components distinguished by letters, sometimes the reference numerals omitting the letters are used to describe the common content among such components.

[0201] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. Thus, an image can be displayed on the pixel section 177. Note that, in the present embodiment, the sub-pixels of three colors, red (R), green (G), and blue (B), are taken as an example for description, and sub-pixels of other colors may also be combined. In addition, the number of sub-pixels is not limited to three and may be four or more. As four sub-pixels, for example, sub-pixels of four colors, R, G, B, and white (W); sub-pixels of four colors, R, G, B, and (Y); and sub-pixels of four colors, R, G, B, and infrared light (IR) can be cited; and so on.

[0202] In this specification and the like, sometimes the row direction is denoted as the X direction and the column direction is denoted as the Y direction. The X direction intersects with the Y direction, for example, perpendicularly.

[0203] In Figure 3A the example shown, sub-pixels of different colors are arranged and configured in the X direction, and sub-pixels of the same color are arranged and configured in the Y direction. Note that sub-pixels of different colors may also be arranged and configured in the Y direction, and sub-pixels of the same color may be arranged and configured in the X direction.

[0204] A connection section 140 is provided outside the pixel section 177, and an area 141 may also be provided. For example, the area 141 is provided between the pixel section 177 and the connection section 140. An organic compound layer 103 is provided in the area 141. In addition, a conductive layer 151C is provided in the connection section 140.

[0205] In Figure 3A and Figure 3B the example shown, the area 141 and the connection section 140 are located on the right side of the pixel section 177, but there is no particular limitation on the positions of the area 141 and the connection section 140. In addition, the area 141 and the connection section 140 may also be one or more.

[0206] Figure 3B is an example of a cross-sectional view along the dotted line A1 - A2 in Figure 3A . As Figure 3AAs shown, the display device 100 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is disposed on a substrate (not shown). The insulating layer 175, the insulating layer 174, and the insulating layer 173 are provided with openings reaching the conductive layer 172, and plugs 176 are disposed in such a manner as to be embedded in the openings.

[0207] In the pixel portion 177, a light-emitting device 130 is disposed on the insulating layer 175 and the plugs 176. A protective layer 131 is disposed so as to cover the light-emitting device 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. In addition, it is preferable to provide an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 between adjacent light-emitting devices 130.

[0208] Figure 3B Cross-sections of a plurality of inorganic insulating layers 125 and a plurality of insulating layers 127 are shown, but when the display device 100 is viewed from above, the inorganic insulating layer 125 and the insulating layer 127 are preferably formed as continuous single layers, respectively. That is, the insulating layer 127 is preferably an insulating layer having an opening portion on the first electrode.

[0209] Figure 3B Light-emitting devices 130R, 130G, and 130B are shown as the light-emitting device 130. The light-emitting devices 130R, 130G, and 130B exhibit different light-emitting colors from each other. For example, the light-emitting device 130R can emit red light, the light-emitting device 130G can emit green light, and the light-emitting device 130B can emit blue light. In addition, the light-emitting device 130R, the light-emitting device 130G, or the light-emitting device 130B can also emit other visible light or infrared light.

[0210] The display device according to one embodiment of the present invention can have, for example, a top emission structure that emits light in a direction opposite to the substrate on which the light-emitting device is formed. In addition, the display device according to one embodiment of the present invention can also have a bottom emission structure.

[0211] Examples of the light-emitting substance contained in the light-emitting device 130 include organic compounds or organometallic complexes such as substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), and substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). In addition, inorganic compounds such as quantum dots can also be used.

[0212] The light-emitting device 130R has the structure as shown in Embodiment 1. The light-emitting device 130R includes a first electrode (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided. However, when the common layer 104 is provided, damage to the organic compound layer 103R during processing can be reduced, so it is preferred. When the common layer 104 is provided, the common layer 104 is preferably an electron injection layer. In addition, when the common layer 104 is provided, the stacked structure of the organic compound layer 103R and the common layer 104 is equivalent to the organic compound layer 103 in Embodiment 2.

[0213] The light-emitting device 130G has the structure as shown in Embodiment 1, and includes a first electrode (pixel electrode) composed of a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided. However, when the common layer 104 is provided, damage to the organic compound layer 103G during processing can be reduced, so it is preferred. When the common layer 104 is provided, the common layer 104 is preferably an electron injection layer. In addition, when the common layer 104 is provided, the stacked structure of the organic compound layer 103G and the common layer 104 is equivalent to the organic compound layer 103 in Embodiment 2.

[0214] The light-emitting device 130B has the structure as shown in Embodiment 1, and includes a first electrode (pixel electrode) composed of a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a second electrode (common electrode) 102 on the common layer. The common layer 104 may or may not be provided. However, when the common layer 104 is provided, damage to the organic compound layer 103B during processing can be reduced, so it is preferred. When the common layer 104 is provided, the common layer 104 is preferably an electron injection layer. In addition, when the common layer 104 is provided, the stacked structure of the organic compound layer 103B and the common layer 104 is equivalent to the organic compound layer 103 in Embodiment 2.

[0215] One of the pixel electrode and the common electrode included in the light-emitting device is used as the anode, and the other is used as the cathode. Hereinafter, unless otherwise specified, the description will be made on the premise that the pixel electrode is used as the anode and the common electrode is used as the cathode.

[0216] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are each independently formed in an island shape for each sub-pixel or emission color. By forming the organic compound layer 103 in an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can also be suppressed in the high-definition display device. Thereby, crosstalk can be suppressed, and a display device with extremely high contrast can be realized. In particular, a display device with high current efficiency at low brightness can be realized.

[0217] The island-shaped organic compound layer 103 is formed by depositing an EL film and processing the EL film using a lithography technique.

[0218] In addition, in the display device according to one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a stacked structure. For example, in Figure 3B the example shown, the first electrode of the light-emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152. For example, when the display device 100 has a top-emission structure and the pixel electrode of the light-emitting device 130 is used as an anode, preferably, the conductive layer 151 is a layer with a high visible light reflectance, and the conductive layer 152 is, for example, a layer with visible light transmissivity and a large work function. When the display device 100 has a top-emission structure, the higher the visible light reflectance of the pixel electrode, the higher the light extraction efficiency of the light emitted from the organic compound layer 103. In addition, when the pixel electrode is used as an anode, the larger the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. Thereby, by the pixel electrode of the light-emitting device 130 having a stacked structure of a conductive layer 151 with a high visible light reflectance and a conductive layer 152 with a large work function, the light-emitting device 130 can be a light-emitting device with high light extraction efficiency and low driving voltage.

[0219] When the conductive layer 151 is a layer with a high visible light reflectance, the visible light reflectance of the conductive layer 151 is preferably, for example, 40% or more and 100% or less, more preferably 70% or more and 100% or less. In addition, when the conductive layer 152 is an electrode with visible light transmissivity, the visible light transmittance is preferably, for example, 40% or more.

[0220] Here, when the pixel electrode has a stacked structure of multiple layers, the pixel electrode deteriorates, for example, due to the reaction between the multiple layers. For example, when removing the film formed after forming the pixel electrode by a wet etching method, galvanic corrosion occurs due to the chemical solution contacting the pixel electrode.

[0221] In view of this, in the display device 100 of the present embodiment, the insulating layer 156 is formed on the sides of the conductive layer 151 and the conductive layer 152. Thus, for example, even when using a wet etching method to remove the film formed after forming the pixel electrodes including the conductive layer 151 and the conductive layer 152, contact of the chemical solution with the conductive layer 151 can be suppressed. Therefore, for example, galvanic corrosion occurring in the pixel electrodes can be suppressed. As a result, the display device 100 can be manufactured by a method with a high yield, so an inexpensive display device can be realized. In addition, occurrence of defects in the display device 100 can be suppressed, so the display device 100 can be a highly reliable display device.

[0222] As the conductive layer 151, for example, a metal material can be used. Specifically, for example, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc. and alloys obtained by appropriately combining them can also be used.

[0223] As the conductive layer 152, an oxide containing any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing any one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, the work function of indium tin oxide containing silicon is relatively large, for example, 4.0 eV or more, so it can be suitably used as the conductive layer 152.

[0224] The conductive layer 151 and the conductive layer 152 may each also have a laminated structure including a plurality of layers containing different materials. In this case, the conductive layer 151 may also include a layer using a material such as a conductive oxide that can be used for the conductive layer 152, and the conductive layer 152 may also include a layer using a material such as a metal material that can be used for the conductive layer 151. For example, when the conductive layer 151 has a laminated structure of two or more layers, the layer in contact with the conductive layer 152 may be a layer using a material that can be used for the conductive layer 152.

[0225] Note that the end of the insulating layer 156 may also have a tapered shape. Specifically, when the end of the insulating layer 156 has a tapered shape with a taper angle less than 90°, the coverage of the structure provided along the side of the insulating layer 156 can be improved.

[0226] Figure 4A It is a diagram when the conductive layer 151 has a laminated structure including a plurality of layers containing different materials. As Figure 4AAs shown, the conductive layer 151 includes a conductive layer 151a, a conductive layer 151b on the conductive layer 151a, and a conductive layer 151c on the conductive layer 151b. That is, Figure 4A the shown conductive layer 151 has a three-layer stacked structure. Thus, in the case where the conductive layer 151 has a stacked structure of multiple layers, it is sufficient that the visible light reflectivity of at least one of the layers constituting the conductive layer 151 is higher than that of the conductive layer 152.

[0227] In Figure 4A the shown example, the conductive layer 151b is sandwiched between the conductive layer 151a and the conductive layer 151c. The conductive layer 151a and the conductive layer 151c can use materials that are less likely to deteriorate compared to the conductive layer 151b. For example, the conductive layer 151a can use a material that is less likely to undergo migration due to contact with the insulating layer 175 compared to the conductive layer 151b. In addition, the conductive layer 151c can use a material that is less likely to be oxidized compared to the conductive layer 151b; and the resistivity of its oxide is lower than that of the oxide of the material used for the conductive layer 151b.

[0228] Thus, by adopting the structure in which the conductive layer 151b is sandwiched between the conductive layer 151a and the conductive layer 151c, the selection range of the material for the conductive layer 151b can be expanded. Thereby, for example, the conductive layer 151b can be made into a layer having a visible light reflectivity higher than at least one of the conductive layer 151a and the conductive layer 151c. For example, aluminum can be used as the conductive layer 151b. In addition, an aluminum-containing alloy can also be used as the conductive layer 151b. In addition, titanium can be used as the conductive layer 151a. Although the visible light reflectivity of titanium is lower than that of aluminum, it is less likely to undergo migration compared to aluminum even when in contact with the insulating layer 175. And, titanium can be used as the conductive layer 151c. Although the visible light reflectivity of titanium is lower than that of aluminum, it is less likely to be oxidized compared to aluminum and the resistivity of its oxide is lower than that of aluminum oxide.

[0229] In addition, silver or a silver-containing alloy can also be used as the conductive layer 151c. Silver has the property of having a higher visible light reflectance than titanium. Furthermore, silver has the following properties: it is less likely to be oxidized compared to aluminum, and the resistivity of silver oxide is lower than that of aluminum oxide. Thus, when silver or a silver-containing alloy is used as the conductive layer 151c, the visible light reflectance of the conductive layer 151 can be appropriately increased while suppressing the increase in the resistance of the pixel electrode due to the oxidation of the conductive layer 151b. Here, as the silver-containing alloy, for example, an alloy of silver, palladium, and copper (Ag-Pd-Cu, also denoted as APC) can be used. In addition, when silver or a silver-containing alloy is used as the conductive layer 151c and aluminum is used as the conductive layer 151b, the visible light reflectance of the conductive layer 151c can be increased compared to that of the conductive layer 151b. Here, silver or a silver-containing alloy can also be used as the conductive layer 151b. In addition, silver or a silver-containing alloy can also be used as the conductive layer 151a.

[0230] On the other hand, the etch processability of a film using titanium is superior to that of a film using silver. Therefore, by using titanium as the conductive layer 151c, the conductive layer 151c can be easily formed. In addition, the etch processability of a film using aluminum is also superior to that of a film using silver.

[0231] Thus, by making the conductive layer 151 have a laminated structure of multiple layers, the characteristics of the display device can be improved. For example, the display device 100 can be made into a display device with high light extraction efficiency and reliability.

[0232] Here, in the case where the light-emitting device 130 adopts a microcavity structure, by using silver or a silver-containing alloy, which is a material with a high visible light reflectance, as the conductive layer 151c, the light extraction efficiency of the display device 100 can be appropriately increased.

[0233] As described above, the side surface of the conductive layer 151 preferably has a tapered shape. Specifically, the side surface of the conductive layer 151 preferably has a tapered shape with a taper angle less than 90°. For example, in Figure 4A the conductive layer 151 having the structure shown, it is preferable that the side surface of at least one of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c has a tapered shape.

[0234] Figure 4AThe conductive layer 151 shown can be formed by lithography. Specifically, first, a conductive film that will become the conductive layer 151a, a conductive film that will become the conductive layer 151b, and a conductive film that will become the conductive layer 151c are sequentially deposited. Next, a resist mask is formed on the conductive film that will become the conductive layer 151c. Then, for example, the conductive film in the region that does not overlap with the resist mask is removed by an etching method. Here, by processing the conductive film under conditions where the resist mask is more likely to retreat (shrink) compared to the case where the conductive layer 151 is formed with a non-tapered shape (i.e., vertical sides), a conductive layer 151 with tapered sides can be formed.

[0235] Here, when processing the conductive film under conditions where the resist mask is likely to retreat (shrink), the conductive film is sometimes likely to be processed in the horizontal direction. In other words, the isotropy of etching is sometimes higher compared to the case where the conductive layer 151 is formed with vertical sides.

[0236] In addition, when the conductive layer 151 has a stacked structure of multiple layers made of different materials, the processability in the horizontal direction of these multiple layers is sometimes different. For example, the processability in the horizontal direction of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c is sometimes different.

[0237] In this case, sometimes after processing the conductive film, as Figure 4A shown, a protrusion is formed with the side surface of the conductive layer 151b located inside the side surfaces of the conductive layer 151a and the conductive layer 151c. As a result, there is a concern that the coverage of the conductive layer 152 over the conductive layer 151 is reduced and disconnection of the conductive layer 152 occurs.

[0238] In view of this, it is preferable to provide the insulating layer 156 as Figure 4A shown. Figure 4A An example is shown in which the insulating layer 156 is provided on the conductive layer 151a so as to have a region overlapping with the side surface of the conductive layer 151b. Thereby, disconnection or thinning of the conductive layer 152 due to the protrusion can be suppressed, and thus connection failure or an increase in driving voltage can be suppressed.

[0239] Note that although Figure 4A shows a structure in which the entire side surface of the conductive layer 151b is covered by the insulating layer 156, a part of the side surface of the conductive layer 151b may not be covered by the insulating layer 156. The same applies to the pixel electrode having the structure shown below, and a part of the side surface of the conductive layer 151b may not be covered by the insulating layer 156.

[0240] When the conductive layer 151 has Figure 4AWhen in the structure shown, the conductive layer 152 covers the conductive layers 151a, 151b, 151c and the insulating layer 156 and is electrically connected to the conductive layers 151a, 151b and 151c. Thus, for example, when removing the film deposited after forming the conductive layer 152 by a wet etching method, the liquid medicine can also be prevented from contacting the conductive layers 151a, 151b and 151c. Therefore, corrosion occurring in the conductive layers 151a, 151b and 151c can be suppressed. Therefore, the display device 100 can be manufactured by a method with a high yield. In addition, the occurrence of defects can be suppressed, whereby a display device 100 with high reliability can be realized.

[0241] Here, as Figure 4A shown, the insulating layer 156 preferably has a curved surface. Thus, for example, disconnection occurring in the conductive layer 152 covering the insulating layer 156 can be suppressed as compared with the case where it is perpendicular to the side surface of the insulating layer 156 (parallel to the Z direction). In addition, when the side surface of the insulating layer 156 has a tapered shape, specifically a tapered shape with a taper angle less than 90°, for example, disconnection occurring in the conductive layer 152 covering the insulating layer 156 can be suppressed as compared with the case where it is perpendicular to the side surface of the insulating layer 156. Thus, the display device 100 can be manufactured by a method with a high yield. In addition, the occurrence of defects is suppressed, and the display device 100 can be made into a display device with high reliability.

[0242] Note that Figure 4A a structure is shown in which the side surface of the conductive layer 151b is located inside the side surfaces of the conductive layer 151a and the conductive layer 151c, but one embodiment of the present invention is not limited thereto. For example, the side surface of the conductive layer 151b may also be located outside the side surface of the conductive layer 151a. In addition, the side surface of the conductive layer 151b may also be located outside the side surface of the conductive layer 151c.

[0243] FIG. 4B to FIG. 4D Another structure of the first electrode 101 is shown. Figure 4B Shown in Figure 4A the first electrode 101 of, a structure in which the insulating layer 156 covers the side surfaces of the conductive layers 151a, 151b and 151c in addition to the side surface of the conductive layer 151b.

[0244] Figure 4C Shown in Figure 4A the first electrode 101 of, a structure in which the insulating layer 156 is not provided.

[0245] Figure 4D Shown is a structure in which Figure 4A in the first electrode 101 of, the conductive layer 151 does not have a stacked structure and the conductive layer 152 has a stacked structure.

[0246] The conductive layer 152a is a layer with a closer adhesion to the conductive layer 152b, for example, higher than that of the insulating layer 175. As the conductive layer 152a, for example, an oxide containing any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing any one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. Thereby, film peeling of the conductive layer 152b can be suppressed. In addition, the conductive layer 152b can be made not to contact the insulating layer 175.

[0247] The conductive layer 152b is a layer having a higher visible light reflectance (for example, the reflectance of light at a specified wavelength in the range of 400 nm or more and less than 750 nm) than the conductive layer 151, the conductive layer 152a, and the conductive layer 152c. The visible light reflectance of the conductive layer 152b can be, for example, 70% or more and 100% or less, preferably 80% or more and 100% or less, and more preferably 90% or more and 100% or less. In addition, as the conductive layer 152b, for example, a material having a higher visible light reflectance than aluminum can be used. Specifically, for example, silver or a silver-containing alloy can be used as the conductive layer 152b. As the silver-containing alloy, for example, an alloy of silver, palladium, and copper (APC) can be cited. Thereby, the display device 100 can be made into a display device with high light extraction efficiency. Note that a metal other than silver can also be used as the conductive layer 152b.

[0248] When the conductive layer 151 and the conductive layer 152 are used as anodes, the conductive layer 152c is preferably a layer having a large work function. The conductive layer 152c is, for example, a layer having a larger work function than the conductive layer 152b. As the conductive layer 152c, for example, the same material as that which can be used for the conductive layer 152a can be used. For example, the same material can be used for the conductive layer 152a and the conductive layer 152c. For example, when indium tin oxide is used for the conductive layer 152a, indium tin oxide can also be used for the conductive layer 152c.

[0249] Note that when the conductive layer 151 and the conductive layer 152 are used as cathodes, the conductive layer 152c is preferably a layer having a small work function. The conductive layer 152c is, for example, a layer having a smaller work function than the conductive layer 152b.

[0250] In addition, the conductive layer 152c is preferably a layer with a high visible light transmittance (e.g., the transmittance of light with a specified wavelength in the range of 400 nm or more and less than 750 nm). For example, the visible light transmittance of the conductive layer 152c is preferably higher than that of the conductive layer 151 and the conductive layer 152b. For example, the visible light transmittance of the conductive layer 152c can be 60% or more and 100% or less, preferably 70% or more and 100% or less, and more preferably 80% or more and 100% or less. Thereby, the light emitted from the organic compound layer 103 and absorbed by the conductive layer 152c can be reduced. In addition, as described above, the conductive layer 152b under the conductive layer 152c can be a layer with a high visible light reflectance. Therefore, the display device 100 can be made into a display device with high light extraction efficiency.

[0251] Next, with reference to FIG. 5A to FIG. 10C an example of a manufacturing method of the display device 100 having the Figure 3A shown structure will be described. The organic layer of the light-emitting device included in the display device 100 is formed through a manufacturing process including water treatment. By using the organic compound of one embodiment of the present invention in the organic layer of the light-emitting device included in the display device of one embodiment of the present invention, even when manufacturing a light-emitting device using the organic compound of one embodiment of the present invention through a manufacturing method including water treatment, problems such as dissolution of the layer containing the organic compound and penetration of the liquid medicine into the layer using the organic compound can be prevented, and thus a light-emitting device with good characteristics can be provided.

[0252] [Example of Manufacturing Method] The thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by sputtering, chemical vapor deposition (CVD: Chemical Vapor Deposition), vacuum evaporation, pulsed laser deposition (PLD: Pulsed Laser Deposition), or ALD method, etc. As the CVD method, there are plasma-enhanced chemical vapor deposition (PECVD: Plasma Enhanced CVD) method and thermal CVD method, etc. In addition, as one of the thermal CVD methods, there is metal organic chemical vapor deposition (MOCVD: Metal Organic CVD) method.

[0253] In addition, the thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by wet deposition methods such as spin coating, dipping, spraying, inkjet, dispenser, screen printing, offset printing, doctor knife method, slot coating method, roll coating method, curtain coating method, or blade coating method.

[0254] In particular, when manufacturing a light-emitting device, vacuum processes such as vapor deposition methods and solution processes such as spin coating and inkjet printing can be utilized. As vapor deposition methods, physical vapor deposition methods (PVD methods) such as sputtering, ion plating, ion beam evaporation, molecular beam epitaxy, and vacuum evaporation, and chemical vapor deposition (CVD) methods can be cited. In particular, methods such as vapor deposition (such as vacuum evaporation), coating (dip coating, dye coating, bar coating, spin coating, spraying), printing (inkjet printing, screen printing (stencil printing), offset printing (lithography), flexography (letterpress printing), gravure printing, or microcontact printing, etc.) can be used to form functional layers (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, etc.) included in the organic compound layer.

[0255] In addition, when processing a thin film constituting a display device, for example, photolithography can be used for processing. Alternatively, nanoimprinting, sandblasting, peeling, etc. can also be used to process the thin film. In addition, island-shaped thin films can be directly formed by a deposition method using a masking mask such as a metal mask.

[0256] As photolithography, for example, lithography can be used. There are typically two methods of lithography. One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching, for example, and removing the resist mask. The other is a method of forming a photosensitive thin film and then performing exposure and development to process the thin film into a desired shape.

[0257] In lithography, as the light for exposure, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or light obtained by mixing these lights can be used. In addition, ultraviolet light, KrF laser, ArF laser, etc. can also be used. In addition, immersion exposure technology can be used for exposure. In addition, as the light for exposure, extreme ultraviolet (EUV) light or X-rays can also be used. In addition, instead of the light for exposure, an electron beam can also be used. When using extreme ultraviolet light, X-rays, or an electron beam, extremely fine processing can be performed, so it is preferred. In addition, when performing exposure by scanning a light beam such as an electron beam, a photomask is not required.

[0258] In the etching of a thin film, dry etching, wet etching, sandblasting, etc. can be utilized.

[0259] First, as Figure 5AAn insulating layer 171 is formed on a substrate (not shown). Next, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layer 172 and the conductive layer 179. Next, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0260] As the substrate, a substrate having at least heat resistance capable of withstanding the subsequent heat treatment can be used. When an insulating substrate is used as the substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. In addition, a single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate made of silicon germanium, an SOI substrate, or the like can also be used.

[0261] Next, as Figure 5A shown, an opening reaching the conductive layer 172 is formed in the insulating layer 175, the insulating layer 174, and the insulating layer 173. Next, a plug 176 is formed so as to fill the opening.

[0262] Next, as Figure 5A shown, a conductive film 151f that will later become the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, and the conductive layer 151C is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed, for example, by a sputtering method or a vacuum evaporation method. In addition, a metal material can be used as the conductive film 151f, for example.

[0263] Next, as Figure 5A shown, a conductive film 152f that will later become the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C is formed on the conductive film 151f. The conductive film 152f can be formed, for example, by a sputtering method or a vacuum evaporation method. In addition, a conductive oxide can be used as the conductive film 152f, for example. Alternatively, a laminated structure of a film using a metal material and a film using a conductive oxide on the film can be adopted as the conductive film 152f. For example, a laminated structure of a film using titanium, silver, or a silver-containing alloy and a film using a conductive oxide on the film can be adopted as the conductive film 152f.

[0264] In addition, the conductive film 152f can be formed by ALD method. Here, as the conductive film 152f, an oxide containing any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. At this time, by repeating the cycle with the introduction of a precursor (generally sometimes referred to as a precursor or metal precursor, etc.), the purge of this precursor, the introduction of an oxidant (generally sometimes referred to as a reactant, reactant, or non-metal precursor, etc.), and the purge of this oxidant as one cycle, the conductive film 152f can be formed. Here, when forming an oxide film containing multiple metals such as indium tin oxide as the conductive film 152f, the metal composition can be controlled by changing the number of cycles according to the type of precursor.

[0265] For example, in the case of depositing an indium tin oxide film as the conductive film 152f, after introducing a precursor containing indium, this precursor is purged and an oxidant is introduced to form an In-O film. Next, after introducing a precursor containing tin, this precursor is purged and an oxidant is introduced to form a Sn-O film. Here, by making the number of cycles when forming the In-O film more than the number of cycles when forming the Sn-O film, the number of In atoms contained in the conductive film 152f can be made more than the number of Sn atoms.

[0266] In addition, for example, in the case of depositing a zinc oxide film as the conductive film 152f, a Zn-O film is formed by the above process. In addition, for example, in the case of depositing an aluminum zinc oxide film as the conductive film 152f, a Zn-O film and an Al-O film are formed by the above process. In addition, for example, in the case of depositing a titanium oxide film as the conductive film 152f, a Ti-O film is formed by the above process. In addition, for example, in the case of depositing an indium tin oxide film containing silicon as the conductive film 152f, an In-O film, a Sn-O film, and a Si-O film are formed by the above process. In addition, for example, in the case of depositing a zinc oxide film containing gallium, a Ga-O film and a Zn-O film are formed by the above process.

[0267] As the precursor containing indium, for example, triethylindium, trimethylindium, or [1,1,1-trimethyl-N-(trimethylsilyl)amide]-indium can be used. As the precursor containing tin, for example, tin chloride or tin tetrakis(dimethylamide) can be used. As the precursor containing zinc, for example, diethylzinc or dimethylzinc can be used. As the precursor containing gallium, for example, triethylgallium can be used. As the precursor containing titanium, for example, titanium chloride, titanium tetrakis(dimethylamide), or tetraisopropyl titanate can be used. As the precursor containing aluminum, for example, aluminum chloride or trimethylaluminum can be used. As the precursor containing silicon, for example, trisilylamine, bis(diethylamino)silane, tris(dimethylamino)silane, bis(tert-butylamino)silane, or bis(ethylmethylamino)silane can be used. In addition, as the oxidant, water vapor, oxygen plasma, or ozone gas can be used.

[0268] Next, as Figure 5A shown, a resist mask 191 is formed on the conductive film 151f and the conductive film 152f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and performing exposure and development.

[0269] Next, as Figure 5B shown, for example, using an etching method, specifically, for example, using a dry etching method, the conductive film 151f and the conductive film 152f in a region not overlapping with the resist mask 191 are removed, and a pixel electrode including the conductive layer 151 and the conductive layer 152 is formed. Note that, in the case where the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer can also be removed using a wet etching method. Thus, the conductive layer 151 and the conductive layer 152 are formed. Note that, for example, in the case of removing a part of the conductive film 151f using a dry etching method, recesses may be formed in a region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0270] Note that, after processing the conductive film 152f using lithography to form the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C, the conductive film 151f can be processed using the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C as masks. Specifically, for example, after forming a resist mask, a part of the conductive film 152f is removed using an etching method. For example, the conductive film 152f can be removed using a wet etching method. Note that the conductive film 152f can also be removed by a dry etching method. Then, it is preferable to remove the conductive film 151f using a wet etching method.

[0271] Here, it is preferable to perform a hydrophobization treatment on the conductive layer 152. By the hydrophobization treatment, the surface state of the object to be treated can be changed from hydrophilic to hydrophobic, or the hydrophobicity of the surface of the object to be treated can be increased. By performing the hydrophobization treatment on the conductive layer 152, the adhesion between the conductive layer 152 and the organic compound layer 103 to be formed in a later process can be improved to suppress film peeling. Note that the hydrophobization treatment may not be performed.

[0272] Next, as Figure 5C shown, the resist mask 191 is removed. The resist mask 191 can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or a Group 18 element such as He can also be used. Alternatively, the resist mask 191 can be removed by wet etching.

[0273] Next, as Figure 5DAs shown, an insulating film 156f that will later become insulating layers 156R, 156G, 156B, and 156C is formed on conductive layer 151R and conductive layer 152R, on conductive layer 151G and conductive layer 152G, on conductive layer 151B and conductive layer 152B, on conductive layer 151C and conductive layer 152C, and on insulating layer 175. The insulating film 156f can be formed, for example, by CVD method, ALD method, sputtering method, or vacuum evaporation method.

[0274] The insulating film 156f can use an inorganic material. As the insulating film 156f, for example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitrogen oxide insulating film can be used. For example, as the insulating film 156f, an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitrogen oxide insulating film containing silicon can be used. For example, silicon oxynitride can be used as the insulating film 156f.

[0275] Next, as Figure 5E shown, the insulating film 156f is processed to form insulating layers 156R, 156G, 156B, and 156C. For example, by etching the top surface of the insulating film 156f substantially uniformly, the insulating layer 156 can be formed. The process of etching uniformly like this for planarization is also called etch-back processing. In addition, the insulating layer 156 can also be formed using lithography technology.

[0276] Next, as Fig. 6A shown, an organic compound film 103Rf that will later become an organic compound layer 103R is formed on conductive layer 152R, conductive layer 152G, conductive layer 152B, insulating layer 156R, insulating layer 156G, insulating layer 156B, and insulating layer 175.

[0277] As Fig. 6A shown, the organic compound film 103Rf is not formed on the conductive layer 152C. For example, by using a mask for defining the deposition range (also called a region mask or a coarse metal mask, etc. to distinguish it from a high-precision metal mask), the organic compound film 103Rf can be deposited only in the desired region. By adopting a deposition process using a region mask and a processing process using a resist mask, a light-emitting device can be manufactured with a relatively simple process.

[0278] The organic compound film 103Rf can be formed, for example, by evaporation method, specifically by vacuum evaporation method. In addition, the organic compound film 103Rf can also be formed by methods such as transfer method, printing method, inkjet method, and coating method.

[0279] Next, as Fig. 6AAs shown, a sacrificial film 158Rf that will later become a sacrificial layer 158R and a mask film 159Rf that will later become a mask layer 159R are sequentially formed on the organic compound film 103Rf, the conductive layer 152C, and the insulating layer 175.

[0280] Note that, in the present embodiment, an example in which the mask film is composed of a two-layer structure of the sacrificial film 158Rf and the mask film 159Rf is shown, but the mask film may have a single-layer structure or a laminated structure of three or more layers.

[0281] By providing a sacrificial layer on the organic compound film 103Rf, damage to the organic compound film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0282] As the sacrificial film 158Rf, a film with high resistance to the processing conditions of the organic compound film 103Rf is used, specifically, a film with a large etching selectivity ratio with respect to the organic compound film 103Rf. As the mask film 159Rf, a film with a large etching selectivity ratio with respect to the sacrificial film 158Rf is used.

[0283] In addition, the sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Rf. The substrate temperature when forming the sacrificial film 158Rf and the sacrificial film 159Rf is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, further preferably 100°C or lower, and even more preferably 80°C or lower.

[0284] As the sacrificial film 158Rf and the mask film 159Rf, a film that can be removed by wet etching is preferably used. By using wet etching, damage to the organic compound film 103Rf during the processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to the case of using dry etching.

[0285] The sacrificial film 158Rf and the mask film 159Rf can be formed, for example, by sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum evaporation. In addition, they can also be formed by the above-mentioned wet deposition methods.

[0286] The sacrificial film 158Rf formed in contact with the organic compound film 103Rf is preferably formed by a forming method that causes less damage to the organic compound film 103Rf compared to when forming the mask film 159Rf. For example, compared to sputtering, it is more preferable to form the sacrificial film 158Rf by ALD or vacuum evaporation.

[0287] As the sacrificial film 158Rf and the mask film 159Rf, for example, one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film can be used.

[0288] As the sacrificial film 158Rf and the mask film 159Rf, for example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metal materials can be used respectively. Low melting point materials such as aluminum or silver are particularly preferably used. By using a metal material capable of shielding ultraviolet rays as one or both of the sacrificial film 158Rf and the mask film 159Rf, irradiation of ultraviolet rays to the organic compound film 103Rf can be suppressed, and deterioration of the organic compound film 103Rf can be suppressed, so it is preferable.

[0289] In addition, as the sacrificial film 158Rf and the mask film 159Rf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium-titanium oxide (In-Ti oxide), indium-tin-zinc oxide (In-Sn-Zn oxide), indium-titanium-zinc oxide (In-Ti-Zn oxide), indium-gallium-tin-zinc oxide (In-Ga-Sn-Zn oxide), or indium-tin oxide containing silicon can be used respectively.

[0290] Note that the above gallium can also be replaced with an element M (M is one or more of aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium).

[0291] In addition, as the sacrificial film and the mask film, a film containing a material having light-shielding properties, particularly ultraviolet light-shielding properties, is preferably used. As the light-shielding material, various materials such as a metal, an insulator, a semiconductor, and a semimetal having ultraviolet light-shielding properties can be used. Since a part or all of the sacrificial film and the mask film will be removed in a later process, the sacrificial film and the mask film are preferably films that can be processed by etching, and particularly preferably films with good processability.

[0292] When a semiconductor material such as silicon or germanium is used as the sacrificial film and the mask film, for example, the affinity of the material for the semiconductor manufacturing process is high, so it is preferable. Alternatively, an oxide or nitride of the above semiconductor material can be used. Alternatively, a non-metal material such as carbon or its compound can be used. In addition, a metal such as titanium, tantalum, tungsten, chromium, aluminum, or an alloy containing one or more of them can be used. In addition, an oxide containing the above metal such as titanium oxide or chromium oxide, or a nitride such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0293] In addition, by using a film made of a material having ultraviolet light-shielding properties as a sacrificial film or a mask film, it is possible to suppress, for example, ultraviolet light from irradiating the organic compound layer in the exposure process. By suppressing damage to the organic compound layer caused by ultraviolet light, the reliability of the light-emitting device can be improved.

[0294] Note that the same effect is also produced when the film containing the material having ultraviolet light-shielding properties is used as the material for the inorganic insulating film 125f described later.

[0295] In addition, various inorganic insulating films can be used as the sacrificial film 158Rf and the mask film 159Rf, respectively. In particular, an oxide insulating film has a higher adhesion to the organic compound film 103Rf than a nitride insulating film, so it is preferred. For example, inorganic insulating materials such as alumina, hafnium oxide, or silicon oxide can be used for the sacrificial film 158Rf and the mask film 159Rf. As the sacrificial film 158Rf and the mask film 159Rf, an alumina film can be formed by ALD method, for example. By using the ALD method, damage to the substrate (especially to the organic compound layer) can be reduced, so it is preferred.

[0296] For example, an inorganic insulating film (e.g., an alumina film) formed by ALD method can be used as the sacrificial film 158Rf, and an inorganic film (e.g., an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed by sputtering method can be used as the mask film 159Rf.

[0297] In addition, the same inorganic insulating film can be used for both the sacrificial layer 158Rf and the inorganic insulating layer 125 to be formed later. For example, an alumina film formed by ALD method can be used for both the sacrificial layer 158Rf and the inorganic insulating layer 125. Here, the sacrificial layer 158Rf and the inorganic insulating layer 125 can be deposited under the same deposition conditions or different deposition conditions. For example, by depositing the sacrificial film 158Rf under the same conditions as the inorganic insulating layer 125, an insulating layer with high barrier properties against at least one of water and oxygen can be formed as the sacrificial film 158Rf. On the other hand, since most or all of the sacrificial film 158Rf will be removed in later processes, it is preferably easy to process. Therefore, the sacrificial layer 158Rf is preferably deposited under conditions with a lower substrate temperature than the inorganic insulating layer 125 during deposition.

[0298] As one or both of the sacrificial film 158Rf and the mask film 159Rf, an organic material can also be used. For example, as the organic material, a material that can be dissolved in a solvent that is at least chemically stable to the film located at the uppermost part of the organic compound film 103Rf can be used. In particular, a material that can be dissolved in water or alcohol can be appropriately used. When depositing the above material, preferably, the material is coated by a wet deposition method in a state where the material is dissolved in a solvent such as water or alcohol, and then a heat treatment for evaporating the solvent is performed. At this time, it is preferable to perform the heat treatment in a reduced-pressure atmosphere, whereby the solvent can be removed at a low temperature and in a short time, and the thermal damage to the organic compound film 103Rf can be reduced.

[0299] As the sacrificial film 158Rf and the mask film 159Rf, organic resins such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, a polyamide resin soluble in alcohol, or a fluororesin such as a perfluoropolymer can also be used.

[0300] For example, as the sacrificial film 158Rf, an organic film (e.g., a PVA film) formed by any one of the evaporation method and the above wet deposition method can be used, and as the mask film 159Rf, an inorganic film (e.g., a silicon nitride film) formed by a sputtering method can be used.

[0301] Next, as shown Fig. 6A An antireflective mask 190R is formed on the mask film 159Rf. The antireflective mask 190R can be formed by coating a photosensitive material (photoresist) and then performing exposure and development.

[0302] The antireflective mask 190R can be manufactured using a positive-type resist material or a negative-type resist material.

[0303] The antireflective mask 190R is provided at a position overlapping the conductive layer 152R. The antireflective mask 190R is preferably also provided at a position overlapping the conductive layer 152C. Thereby, damage to the conductive layer 152C during the manufacturing process of the display device can be suppressed. Note that the antireflective mask 190R may not be provided on the conductive layer 152C. In addition, as shown in the cross-sectional view along B1 - B2 in Fig. 6A , the antireflective mask 190R is preferably provided so as to cover the end of the organic compound film 103Rf to the end of the conductive layer 152C (the end on the organic compound film 103Rf side).

[0304] Next, as shown Figure 6BAs shown, a part of the mask film 159Rf is removed using a resist mask 190R to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. Then, the resist mask 190R is removed. Next, the mask layer 159R is used as a mask (also referred to as a hard mask) to remove a part of the sacrificial film 158Rf to form a sacrificial layer 158R.

[0305] The sacrificial film 158Rf and the mask film 159Rf can be processed using a wet etching method or a dry etching method, respectively. The processing of the sacrificial film 158Rf and the mask film 159Rf is preferably performed by isotropic etching.

[0306] By using a wet etching method, compared with the case of using a dry etching method, the damage to the organic compound film 103Rf during the processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced. When using a wet etching method, for example, it is preferable to use a developing solution, an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a liquid medicine such as a mixed liquid thereof.

[0307] When processing the mask film 159Rf, the organic compound film 103Rf is not exposed, so the range of selection of the processing method is wider compared with the case of processing the sacrificial film 158Rf. Specifically, when processing the mask film 159Rf, even if an oxygen-containing gas is used as the etching gas, the deterioration of the organic compound film 103Rf can be suppressed.

[0308] In addition, when using a dry etching method in the processing of the sacrificial film 158Rf, the deterioration of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas. In the case of using a dry etching method, for example, it is preferable to use a gas containing CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or a Group 18 element such as He as the etching gas.

[0309] For example, when using an aluminum oxide film formed by ALD as the sacrificial film 158Rf, a part of the sacrificial film 158Rf can be removed using CHF3 and He or CHF3, He, and CH4 by dry etching. In addition, when using an In-Ga-Zn oxide film formed by sputtering as the mask film 159Rf, a part of the mask film 159Rf can be removed using dilute phosphoric acid by wet etching. Or, a part of the mask film 159Rf can be removed using CH4 and Ar by dry etching. Or, a part of the mask film 159Rf can be removed using dilute phosphoric acid by wet etching. In addition, in the case of using a tungsten film formed by sputtering as the mask film 159Rf, a part of the mask film 159Rf can be removed using SF6, CF4, and O2 or CF4, Cl2, and O2 by dry etching.

[0310] The resist mask 190R can be removed by the same method as the resist mask 191. The resist mask 190R can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or a Group 18 element such as He can also be used. Alternatively, the resist mask 190R can be removed by wet etching. At this time, since the sacrificial film 158Rf is located on the outermost surface and the organic compound film 103Rf is not exposed, damage to the organic compound film 103Rf can be suppressed in the process of removing the resist mask 190R. In addition, the range of choices for the method of removing the resist mask 190R can be expanded.

[0311] Next, as Figure 6B shown, the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, the mask layer 159R and the sacrificial layer 158R are used as hard masks to remove a part of the organic compound film 103Rf to form the organic compound layer 103R.

[0312] Thus, as Figure 6B shown, a stacked structure of the organic compound layer 103R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R. In addition, the conductive layer 152G and the conductive layer 152B are exposed.

[0313] Figure 6B An example is shown in which the end of the organic compound layer 103R is located inside the end of the conductive layer 152R. By adopting this structure, miniaturization of the pixel can be achieved, and a high-definition display can be manufactured. Note that although not shown in Figure 6B , sometimes recesses are formed in the region of the insulating layer 175 that does not overlap with the organic compound layer 103R by the above-described etching process.

[0314] As described above, the resist mask 190R is preferably provided so as to cover the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side) between B1 - B2. Thus, as Figure 6B shown, the sacrificial layer 158R and the mask layer 159R are provided so as to cover the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side) between the dotted lines B1 - B2. Therefore, exposure of the insulating layer 175, for example, between B1 - B2 can be suppressed. As a result, it is possible to suppress a part of the insulating layer 175, the insulating layer 174, and the insulating layer 173 from being etched away or the like, resulting in exposure of the conductive layer 179. Therefore, unintentional electrical connection of the conductive layer 179 to other conductive layers can be suppressed. For example, a short circuit between the conductive layer 179 and the common electrode 155 to be formed in a later process can be suppressed.

[0315] Preferably, the organic compound film 103Rf is processed by anisotropic etching. More preferably, anisotropic dry etching is used. Alternatively, wet etching may also be used.

[0316] When using the dry etching method, by not using an oxygen-containing gas as the etching gas, deterioration of the organic compound film 103Rf can be suppressed.

[0317] In addition, an oxygen-containing gas may also be used as the etching gas. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low-power conditions while maintaining a sufficient etching rate. Therefore, damage to the organic compound film 103Rf can be suppressed. Also, defects such as adhesion of reaction products generated during etching can be suppressed.

[0318] When using the dry etching method, for example, it is preferable to use a gas containing one or more of H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, and a Group 18 element such as He or Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of the above gases and oxygen as the etching gas. Alternatively, oxygen gas may also be used as the etching gas. Specifically, for example, a gas containing H2 and Ar or a gas containing CF4 and He may be used as the etching gas. In addition, for example, a gas containing CF4, He, and oxygen may be used as the etching gas. Also, for example, a gas containing H2 and Ar and an oxygen-containing gas may be used as the etching gas.

[0319] As described above, in one aspect of the present invention, a mask layer 159R is formed by forming a resist mask 190R on the mask film 159Rf and removing a part of the mask film 159Rf using the resist mask 190R. Then, an organic compound layer 103R is formed by using the mask layer 159R as a mask to remove a part of the organic compound film 103Rf. Therefore, it can be said that the organic compound layer 103R is formed by processing the organic compound film 103Rf using lithography. In addition, a part of the organic compound film 103Rf may be removed using the resist mask 190R. Then, the resist mask 190R may also be removed.

[0320] Next, for example, it is preferable to perform a hydrophobization treatment on the conductive layer 152G. When processing the organic compound film 103Rf, for example, the surface state of the conductive layer 152G sometimes becomes hydrophilic. By performing the hydrophobization treatment on the conductive layer 152G, for example, the adhesion between the conductive layer 152G and the layer (here, the organic compound layer 103G) to be formed in a later process can be improved to suppress film peeling. Note that the hydrophobization treatment may not be performed.

[0321] Next, as Fig. 7AAs shown, an organic compound film 103Gf that will later become the organic compound layer 103G is formed on the conductive layer 152G, the conductive layer 152B, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the mask layer 159R, and the insulating layer 175.

[0322] The organic compound film 103Gf can be formed in the same manner as the method that can be used when forming the organic compound film 103Rf. Additionally, the organic compound film 103Gf can have the same structure as the organic compound film 103Rf.

[0323] Next, as Fig. 7A shown, a sacrificial film 158Gf that will later become the sacrificial layer 158G and a mask film 159Gf that will later become the mask layer 159G are sequentially formed on the organic compound film 103Gf and the mask layer 159R. Then, a resist mask 190G is formed. The materials and formation methods of the sacrificial film 158Gf and the mask film 159Gf are the same as the conditions that can be used for the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods of the resist mask 190G are the same as the conditions that can be applied to the resist mask 190R.

[0324] The resist mask 190G is provided at a position overlapping with the conductive layer 152G.

[0325] Next, as Figure 7B shown, a part of the mask film 159Gf is removed using the resist mask 190G to form the mask layer 159G. The mask layer 159G remains on the conductive layer 152G. Then, the resist mask 190G is removed. Next, a part of the sacrificial film 158Gf is removed using the mask layer 159G as a mask to form the sacrificial layer 158G. Next, the organic compound film 103Gf is processed to form the organic compound layer 103G. For example, a part of the organic compound film 103Gf is removed using the mask layer 159G and the sacrificial layer 158G as hard masks to form the organic compound layer 103G.

[0326] Thus, as Figure 7B shown, a stacked structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G. In addition, the mask layer 159R and the conductive layer 152B are exposed.

[0327] Next, for example, it is preferable to perform a hydrophobization treatment on the conductive layer 152B. When processing the organic compound film 103Gf, for example, the surface state of the conductive layer 152B sometimes becomes hydrophilic. By performing the hydrophobization treatment on the conductive layer 152B, for example, the adhesion between the conductive layer 152B and the layer (here, the organic compound layer 103B) that will be formed in the subsequent process can be improved to suppress film peeling. Note that the hydrophobization treatment may not be performed.

[0328] Next, as Figure 7C shown, an organic compound film 103Bf which will later become the organic compound layer 103B is formed on the conductive layer 152B, the mask layer 159R, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the mask layer 159G, and the insulating layer 175.

[0329] The organic compound film 103Bf can be formed in the same manner as the method that can be used when forming the organic compound film 103Rf. In addition, the organic compound film 103Bf can have the same structure as the organic compound film 103Rf.

[0330] Next, as Figure 7C shown, a sacrificial film 158Bf which will later become the sacrificial layer 158B and a mask film 159Bf which will later become the mask layer 159B are sequentially formed on the organic compound film 103Bf and the mask layer 159R. Then, a resist mask 190B is formed. The materials and formation methods of the sacrificial film 158Bf and the mask film 159Bf are the same as the conditions that can be used for the sacrificial film 158Rf and the mask film 159Rf. The materials and formation methods of the resist mask 190B are the same as the conditions that can be applied to the resist mask 190R.

[0331] The resist mask 190B is provided at a position overlapping with the conductive layer 152B.

[0332] Next, as Fig.7D shown, a part of the mask film 159Bf is removed using the resist mask 190B to form the mask layer 159B. The mask layer 159B remains on the conductive layer 152B. Then, the resist mask 190B is removed. Next, a part of the sacrificial film 158Bf is removed using the mask layer 159B as a mask to form the sacrificial layer 158B. Next, the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, a part of the organic compound film 103Bf is removed using the mask layer 159B and the sacrificial layer 158B as hard masks to form the organic compound layer 103B.

[0333] Thus, as Fig.7D shown, a stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. In addition, the mask layer 159R and the mask layer 159G are exposed.

[0334] Note that the sides of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are each preferably perpendicular or substantially perpendicular to the formation surface. For example, the angle formed by the formation surface and these sides is preferably 60 degrees or more and 90 degrees or less.

[0335] As described above, the distance between two adjacent organic compound layers among the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B formed using lithography technology can be reduced to less than 8 μm, less than 5 μm, less than 3 μm, less than 2 μm, or less than 1 μm. Here, for example, this distance can be defined based on the distance between the opposite ends of two adjacent organic compound layers among the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. In this way, by reducing the distance between the island-shaped organic compound layers, a display device with high clarity and a large aperture ratio can be provided. In addition, the distance between the first electrodes of adjacent light-emitting devices can also be reduced, for example, to less than 10 μm, less than 8 μm, less than 5 μm, less than 3 μm, or less than 2 μm. In addition, the distance between the first electrodes of adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0336] Next, as Fig. 8A shown, it is preferable to remove the mask layer 159R, the mask layer 159G, and the mask layer 159B. Depending on subsequent processes, the sacrificial layer 158R, the sacrificial layer 158G, the sacrificial layer 158B, the mask layer 159R, the mask layer 159G, and the mask layer 159B may remain in the display device. By removing the mask layer 159R, the mask layer 159G, and the mask layer 159B at this stage, it is possible to prevent the mask layer 159R, the mask layer 159G, and the mask layer 159B from remaining in the display device. For example, in the case where a conductive material is used for the mask layer 159R, the mask layer 159G, and the mask layer 159B, by removing the mask layer 159R, the mask layer 159G, and the mask layer 159B in advance, it is possible to prevent leakage current generation and capacitance formation caused by the remaining mask layer 159R, the mask layer 159G, and the mask layer 159B.

[0337] Note that although the case of removing the mask layer 159R, the mask layer 159G, and the mask layer 159B is described as an example in this embodiment, it is also possible not to remove the mask layer 159R, the mask layer 159G, and the mask layer 159B. For example, when the mask layer 159R, the mask layer 159G, and the mask layer 159B contain the above-mentioned material having ultraviolet light-shielding properties, it is preferable to enter the next process without removing the above mask layer, as it can protect the organic compound layer from ultraviolet light.

[0338] As the removal process of the mask layer, the same method as the processing process of the mask film can be used. By using the wet etching method, compared with the case of using the dry etching method, the damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B during the removal of the mask layer can be reduced.

[0339] Alternatively, the mask layer can also be removed by dissolving it in a solvent such as water or alcohol. Examples of the alcohol include ethanol, methanol, isopropyl alcohol (IPA), or glycerin.

[0340] After removing the mask layer, a drying process can also be performed to remove the water contained in the organic compound layers 103R, 103G, and 103B and the water adsorbed on the surfaces of the organic compound layers 103R, 103G, and 103B. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. By using a reduced-pressure atmosphere, drying can be performed at a lower temperature, so it is preferred.

[0341] Next, as Figure 8B shown, an inorganic insulating film 125f that will later become the inorganic insulating layer 125 is formed so as to cover the organic compound layers 103R, 103G, 103B, the sacrificial layers 158R, 158G, and 158B.

[0342] As described later, an insulating film 127f that will later become the insulating layer 127 is formed so as to contact the top surface of the inorganic insulating film 125f. Therefore, the top surface of the inorganic insulating film 125f is preferably highly compatible with the material for this insulating film (for example, a photosensitive resin composition containing an acrylic resin). To improve this compatibility, a surface treatment can also be performed to hydrophobize (or increase its hydrophobicity) the top surface of the inorganic insulating film 125f. For example, it is preferred to perform a treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the top surface of the inorganic insulating film 125f in this way, the insulating film 127f can be formed with high adhesion. In addition, as the surface treatment, the above-mentioned hydrophobization treatment can also be performed.

[0343] Next, as Figure 8C shown, an insulating film 127f that will later become the insulating layer 127 is formed on the inorganic insulating film 125f.

[0344] The inorganic insulating film 125f and the insulating film 127f are preferably deposited by a formation method that causes less damage to the organic compound layers 103R, 103G, and 103B. In particular, since the inorganic insulating film 125f is formed so as to contact the sides of the organic compound layers 103R, 103G, and 103B, the inorganic insulating film 125f is preferably deposited by a formation method that causes less damage to the organic compound layers 103R, 103G, and 103B than when depositing the insulating film 127f.

[0345] In addition, the inorganic insulating film 125f and the insulating film 127f are each formed at a temperature lower than the heat-resistant temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. By increasing the substrate temperature during deposition, an inorganic insulating film 125f with a low impurity concentration and high barrier properties against at least one of water and oxygen can be formed even when its thickness is thin.

[0346] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower.

[0347] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0348] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. By using the ALD method, deposition damage can be reduced, and a film with high coverage can be deposited, so it is preferable. As the inorganic insulating film 125f, it is preferable to form an aluminum oxide film by the ALD method, for example.

[0349] In addition to this, the inorganic insulating film 125f can also be formed by a sputtering method, a CVD method, or a PECVD method with a deposition rate higher than that of the ALD method. Thereby, a display device with high reliability can be manufactured with high productivity.

[0350] The insulating film 127f is preferably formed by the above wet deposition method. The insulating film 127f is preferably formed by spin coating using a photosensitive material, and more specifically, it is preferably formed using a photosensitive resin composition containing an acrylic resin.

[0351] For example, it is preferable to form the insulating film 127f using a resin composition containing a polymer, an acid generator, and a solvent. The polymer is formed using one or more monomers and has a structure in which one or more structural units (also referred to as constituent units) are repeated regularly or irregularly. As the acid generator, one or both of a compound that generates an acid by irradiating light and a compound that generates an acid by heating can be used. The resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0352] In addition, it is preferable to perform a heat treatment (also referred to as pre-baking) after forming the insulating film 127f. This heat treatment is performed at a temperature lower than the heat-resistant temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. The substrate temperature during the heat treatment is preferably 50°C or higher and 200°C or lower, more preferably 60°C or higher and 150°C or lower, and further preferably 70°C or higher and 120°C or lower. Thereby, the solvent in the insulating film 127f can be removed.

[0353] Next, exposure is performed to expose a part of the insulating film 127f with visible light or ultraviolet light. Here, when a positive photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated to the region where the insulating layer 127 will not be formed in the subsequent process. The insulating layer 127 is formed in the region sandwiched by any two of the conductive layers 152R, the conductive layer 152G, and the conductive layer 152B and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated to the conductive layers 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C. Note that when a negative photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated to the region where the insulating layer 127 will be formed.

[0354] By means of the exposed region of the insulating film 127f, the width of the insulating layer 127 to be formed later can be controlled. In the present embodiment, processing is performed such that the insulating layer 127 has a portion overlapping with the top surface of the conductive layer 151.

[0355] The light used for exposure preferably has an i-line (wavelength 365 nm). In addition, the light used for exposure may also have at least one of a g-line (wavelength 436 nm) and an h-line (wavelength 405 nm).

[0356] Here, by providing an oxygen barrier insulating layer (such as an alumina film, etc.) as one or both of the sacrificial layer 158 (sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B) and the inorganic insulating film 125f, oxygen diffusion into the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be suppressed. When light (visible light or ultraviolet light) is irradiated onto the organic compound layer, sometimes the organic compounds contained in the organic compound layer become excited states and promote reactions with oxygen in the atmosphere. Specifically, when light (visible light or ultraviolet light) is irradiated onto the organic compound layer in an oxygen-containing atmosphere, oxygen may bond to the organic compounds contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, oxygen in the atmosphere can be suppressed from bonding to the organic compounds contained in the organic compound layer.

[0357] Next, as Fig. 9AAs shown, the exposed area in the insulating film 127f is removed by development to form the insulating layer 127a. The insulating layer 127a is formed in the area sandwiched by any two of the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B and the area surrounding the conductive layer 152C. Here, in the case of using an acrylic resin for the insulating film 127f, an alkaline solution, such as TMAH, can be used as a developer.

[0358] Next, residues left during development (so-called scum) may be removed. For example, the residues may be removed by ashing using oxygen plasma.

[0359] In addition, etching may be performed to adjust the height of the surface of the insulating layer 127a. The insulating layer 127a may be processed by, for example, ashing using oxygen plasma. In addition, when a non-photosensitive material is used as the insulating film 127f, the height of the surface of the insulating film 127f may also be adjusted by, for example, ashing.

[0360] Then, if Fig. 9B As shown, the insulating layer 127a is used as a mask to perform etching to remove a portion of the inorganic insulating film 125f, thereby reducing the thickness of a portion of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. As a result, the inorganic insulating layer 125 is formed under the insulating layer 127a. In addition, the surface of the thinner portion of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B is exposed. Hereinafter, the etching process using the insulating layer 127a as a mask is sometimes referred to as the first etching process.

[0361] The first etching process can be performed by dry etching or wet etching. When the inorganic insulating film 125f is deposited using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, the first etching process can be performed at once, which is preferable.

[0362] By using the insulating layer 127 a having tapered side surfaces as a mask for etching, the side surfaces of the inorganic insulating layer 125 and the upper end portions of the side surfaces of the sacrificial layers 158R, 158G, and 158B can be easily tapered.

[0363] When dry etching is performed, chlorine-based gas is preferably used. As the chlorine-based gas, one gas selected from Cl2, BCl3, SiCl4, and CCl4, or a mixture of two or more of the above gases, can be used. In addition, one gas selected from oxygen gas, hydrogen gas, helium gas, and argon gas, or a mixture of two or more of the above gases can be appropriately added to the above chlorine-based gas. By utilizing dry etching, thin regions of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B can be formed with excellent in-plane uniformity.

[0364] As a dry etching device, a dry etching device having a high-density plasma source can be used. For example, as a dry etching device having a high-density plasma source, for example, an inductively coupled plasma (ICP: Inductively Coupled Plasma) etching device can be used. Alternatively, a capacitively coupled plasma (CCP: Capacitively Coupled Plasma) etching device including parallel plate electrodes can be used. The capacitively coupled plasma etching device including parallel plate electrodes can also adopt a structure in which a high-frequency voltage is applied to one of the parallel plate electrodes. Alternatively, a structure in which multiple different high-frequency voltages are applied to one of the parallel plate electrodes can also be adopted. Alternatively, a structure in which a high-frequency voltage with the same frequency is applied to each of the parallel plate electrodes can also be adopted. Alternatively, a structure in which high-frequency voltages with different frequencies are applied to each of the parallel plate electrodes can also be adopted.

[0365] In addition, when dry etching is performed, byproducts generated during dry etching may be deposited on the top surface and side surfaces of the insulating layer 127a. As a result, components in the etching gas, components in the inorganic insulating film 125f, components in the sacrificial layers 158R, 158G, and 158B may be included in the insulating layer 127 after the display device is completed.

[0366] In addition, it is preferred to perform the first etching process using wet etching. By using the wet etching method, the damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be further reduced compared to the case of using the dry etching method. For example, wet etching can be performed using an alkaline solution. For example, TMAH, an alkaline solution, can be used in the wet etching of the aluminum oxide film. At this time, wet etching can be performed in a glue coating manner. When the inorganic insulating film 125f is deposited using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, the above-mentioned etching process can be performed at one time, so it is preferred.

[0367] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, and the etching process is stopped in a state where the thickness is reduced. In this way, by leaving the corresponding sacrificial layers 158R, 158G, and 158B on the organic compound layers 103R, 103G, and 103B, the organic compound layers 103R, 103G, and 103B can be prevented from being damaged in the subsequent process.

[0368] Next, the entire substrate is preferably exposed to visible light or ultraviolet light to irradiate the insulating layer 127a. The energy density of this exposure is preferably higher than 0 mJ / cm 2and 800 mJ / cm 2 Hereinafter, it is more preferably higher than 0 mJ / cm 2 and 500 mJ / cm 2 Hereinafter. By performing such exposure after development, the transparency of the insulating layer 127a can sometimes be improved. In addition, the substrate temperature required for the heat treatment for deforming the insulating layer 127a into a tapered shape in the subsequent process can sometimes be reduced.

[0369] Here, by providing an oxygen barrier insulating layer (such as an alumina film or the like) as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, oxygen diffusion into the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be suppressed. When light (visible light or ultraviolet light) is irradiated onto the organic compound layer, sometimes the organic compounds contained in the organic compound layer become excited states and promote reactions with oxygen in the atmosphere. Specifically, when light (visible light or ultraviolet light) is irradiated onto the organic compound layer in an oxygen-containing atmosphere, oxygen may bond to the organic compounds contained in the organic compound layer. By providing the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B on the island-shaped organic compound layer, oxygen in the atmosphere bonding to the organic compounds contained in the organic compound layer can be suppressed.

[0370] Next, a heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be deformed into an insulating layer 127 ( Fig. 9C ) having a tapered shape on its side surface. This heat treatment is performed at a temperature lower than the heat-resistant temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 130°C or lower. The heating atmosphere can be either an atmospheric atmosphere or an inert gas. In addition, the heating atmosphere can be either an atmospheric atmosphere or a reduced-pressure atmosphere. In the heat treatment of this step, it is preferable to increase the substrate temperature compared to the heat treatment (pre-baking) after forming the insulating film 127f. Thereby, the adhesion between the insulating layer 127 and the inorganic insulating layer 125 can be improved, and the corrosion resistance of the insulating layer 127 can also be improved.

[0371] In the first etching process, by not completely removing the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B and leaving the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B in a state where the thickness is thinned, damage and deterioration of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be prevented during this heat treatment. Thereby, the reliability of the light-emitting device can be improved.

[0372] Note that depending on the material of the insulating layer 127 and the temperature, time, and atmosphere of the post-baking, a concave curved surface shape may sometimes be formed on the side surface of the insulating layer 127. For example, the higher the temperature or the longer the time in the post-baking conditions, the more likely the shape of the insulating layer 127 is to change, and thus a concave curved surface shape may sometimes be formed.

[0373] Next, as Fig. 10A shown, an etching process is performed using the insulating layer 127 as a mask to remove a part of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. Note that a part of the inorganic insulating layer 125 may sometimes also be removed. As a result, openings are respectively formed in the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, and the top surfaces of the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, and the conductive layer 152C are exposed. Hereinafter, the etching process using the insulating layer 127 as a mask is sometimes referred to as the second etching process.

[0374] The end portion of the inorganic insulating layer 125 is covered by the insulating layer 127. In addition, Fig. 10A an example is shown in which a part of the end portion of the sacrificial layer 158G (specifically, the tapered shape portion formed by the first etching process) is covered by the insulating layer 127 and the tapered shape portion formed by the second etching process is exposed.

[0375] When the first etching process is not performed and the etching process of the inorganic insulating layer 125 and the mask layer is performed at once after the post-baking, voids may sometimes be formed due to side etching such that the inorganic insulating layer 125 and the mask layer under the end portion of the insulating layer 127 disappear. Due to these voids, unevenness is generated on the surface where the common electrode 155 is formed, and disconnection is likely to occur in the common electrode 155. Even if the inorganic insulating layer 125 and the mask layer are side-etched to form voids after the first etching process, the voids can be filled by the insulating layer 127 through the subsequent post-baking. Then, in the second etching process, the mask layer with a further reduced thickness is etched, so the amount of side etching is less, voids are not easily formed, and the voids that can be formed can also be extremely small. Therefore, the surface where the common electrode 155 is formed can be made flatter.

[0376] The insulating layer 127 may also cover the entire end portion of the sacrificial layer 158G. For example, the end portion of the insulating layer 127 may sometimes droop to cover the end portion of the sacrificial layer 158G. In addition, for example, the end portion of the insulating layer 127 may sometimes contact the top surface of at least one of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. As described above, when the insulating layer 127a after development is not exposed, the shape of the insulating layer 127 may sometimes be easily changed.

[0377] The second etching process is performed using wet etching. By using the wet etching method, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to the case of using the dry etching method. The wet etching can be performed using an alkaline solution such as TMAH.

[0378] On the other hand, when the second etching process is performed using the wet etching method, if there are gaps at the interfaces between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, and between the organic compound layer 103 and the insulating layer 175 due to problems such as the adhesion between the organic compound layer 103 and other layers, the chemical solution used in the second etching process sometimes enters these gaps and contacts the pixel electrode. Here, when the chemical solution contacts both the conductive layer 151 and the conductive layer 152, sometimes the conductive layer with the lower natural potential of the conductive layer 151 and the conductive layer 152 corrodes due to galvanic corrosion. For example, when aluminum is used as the conductive layer 151 and indium tin oxide is used as the conductive layer 152, sometimes the conductive layer 152 corrodes. As a result, the yield of the display device sometimes decreases. In addition, the reliability of the display device sometimes decreases.

[0379] As described above, by forming the insulating layer 156 in such a way that it has a region overlapping the side surface of the conductive layer 151 and forming the insulating layer 156 so as to cover the side surface of the conductive layer 151 and the side surface of the conductive layer 152, disconnection of the inorganic insulating layer 125 can be prevented. Therefore, for example, it is possible to prevent the chemical solution from contacting the underlying structure such as the conductive layer 151 during the second etching process. Thereby, corrosion of the pixel electrode can be prevented.

[0380] As described above, by providing the insulating layer 127, the inorganic insulating layer 125, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, between each light-emitting device, it is possible to suppress poor connection due to disconnection in the common electrode 155 and an increase in resistance due to a portion with a locally thin thickness. Thereby, the display device according to one embodiment of the present invention can improve the display quality.

[0381] In addition, a heat treatment may be performed after a part of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B is exposed. By this heat treatment, water contained in each organic compound layer and water adsorbed on the surface of each organic compound layer can be removed. In addition, the shape of the insulating layer 127 sometimes changes due to this heat treatment. Specifically, the insulating layer 127 sometimes expands so as to cover at least one of the end portion of the inorganic insulating layer 125, the end portions of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, and the top surface of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B.

[0382] When the temperature of the heat treatment is too low, water contained in each organic compound layer and water adsorbed on the surface of each organic compound layer cannot be removed. In addition, when the temperature of the heat treatment is too high, deterioration of the organic compound layer 103 and excessive change in the shape of the insulating layer 127 sometimes occur. Therefore, the heat treatment temperature is preferably higher than the temperature at which water dissociates from the organic compound layer 103 and lower than the glass transition temperature of the organic compound contained in the organic compound layer 103, and preferably lower than the glass transition temperature of the organic compound contained in the top surface of the organic compound layer 103. Specifically, the substrate temperature is preferably 80°C or higher and 130°C or lower, more preferably 90°C or higher and 120°C or lower, further preferably 100°C or higher and 120°C or lower, and still further preferably 100°C or higher and 110°C or lower. The heating atmosphere can be either an air atmosphere or an inert gas. Note that the heating atmosphere can be an atmospheric pressure atmosphere or a reduced pressure atmosphere, and a reduced pressure atmosphere is preferably used to prevent re-adsorption of the water dissociated from the organic compound layer 103.

[0383] Through this heat treatment, water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, etc. can be sufficiently removed without deterioration of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B and excessive change in the shape of the insulating layer 127. Thereby, a decrease in the characteristics of the light-emitting device can be prevented.

[0384] Next, as Fig. 10B shown, a common layer 104 and a common electrode 155 are formed on the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the conductive layer 152C, and the insulating layer 127. The common layer 104 and the common electrode 155 can be formed by methods such as sputtering or vacuum evaporation. Alternatively, the common layer 104 can be formed by evaporation and the common electrode 155 can be formed by sputtering.

[0385] Next, as Fig. 10C shown, a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by methods such as vacuum evaporation, sputtering, CVD, or ALD.

[0386] Next, the substrate 120 is bonded to the protective layer 131 using the resin layer 122, whereby a display device can be manufactured. As described above, in the method for manufacturing a display device according to one embodiment of the present invention, the insulating layer 156 is provided on the sides of the conductive layer 151 and the conductive layer 152. Thereby, the yield of the display device can be improved and the occurrence of defects can be suppressed.

[0387] As described above, in the method for manufacturing a display device according to one embodiment of the present invention, the island-shaped organic compound layer 103R, the island-shaped organic compound layer 103G, and the island-shaped organic compound layer 103B are not formed using a high-precision metal mask but are formed by depositing a film on one surface and then processing it. Therefore, the island-shaped layers can be formed with a uniform thickness. Moreover, a high-definition display device or a display device with a high aperture ratio can be realized. In addition, even when the definition or aperture ratio is high and the distance between sub-pixels is extremely short, contact between the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B in adjacent sub-pixels can be suppressed. Therefore, leakage current between sub-pixels can be suppressed. As a result, crosstalk can be prevented and a display device with an extremely high contrast can be realized. Additionally, a display device that can have good characteristics even when including a tandem light-emitting device manufactured by lithography can be provided.

[0388] The structure of this embodiment can be used in appropriate combination with the structures of other embodiments.

[0389] Embodiment 4 In this embodiment, with reference to FIG. 11A to FIG. 11G and FIG. 12A to FIG. 12I a light-emitting device according to one embodiment of the present invention will be described.

[0390] [Layout of pixels] In this embodiment, a pixel layout different from Figure 3A will be mainly described. The arrangement of sub-pixels is not particularly limited, and various arrangement methods can be adopted. As the arrangement of sub-pixels, for example, stripe arrangement, S-stripe arrangement, matrix arrangement, Delta arrangement, Bayer arrangement, and Pentile arrangement can be cited.

[0391] In this embodiment, the top surface shape of the sub-pixels shown in the drawings corresponds to the top surface shape of the light-emitting region.

[0392] In addition, as the top surface shape of the sub-pixels, for example, polygons such as triangles, quadrangles (including rectangles and squares), pentagons, etc., the above-mentioned polygonal shapes with rounded corners, ellipses, or circles can be cited.

[0393] In addition, the circuit layout constituting the sub-pixels is not limited to the range of the sub-pixels shown in the drawings and can also be arranged outside thereof.

[0394] Fig.11A The pixel 178 shown adopts an S-stripe arrangement. Fig.11A The pixel 178 shown is composed of three sub-pixels: a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0395] Fig. 11BThe pixel 178 shown includes a sub-pixel 110R having a top surface shape of an approximate trapezoid or an approximate triangle with rounded corners, a sub-pixel 110G having a top surface shape of an approximate trapezoid or an approximate triangle with rounded corners, and a sub-pixel 110B having a top surface shape of an approximate quadrilateral or an approximate hexagon with rounded corners. In addition, the light-emitting area of the sub-pixel 110R is larger than that of the sub-pixel 110G. Thus, the shapes and sizes of the respective sub-pixels can be determined independently. For example, the size of a sub-pixel including a highly reliable light-emitting device can be smaller.

[0396] Fig. 11C The pixels 124a and 124b shown adopt a Pentile arrangement. In Fig. 11C the example shown, pixels 124a including sub-pixels 110R and 110G and pixels 124b including sub-pixels 110G and 110B are alternately arranged.

[0397] FIG. 11D to FIG. 11F The pixels 124a and 124b shown adopt a Delta arrangement. Pixel 124a includes two sub-pixels (sub-pixels 110R and 110G) in the upper row (the first row) and one sub-pixel (sub-pixel 110B) in the lower row (the second row). Pixel 124b includes one sub-pixel (sub-pixel 110B) in the upper row (the first row) and two sub-pixels (sub-pixels 110R and 110G) in the lower row (the second row).

[0398] Fig.11D An example is shown where each sub-pixel has a top surface shape of an approximate quadrilateral with rounded corners, Fig.11E An example is shown where each sub-pixel has a circular top surface shape, Fig.11F An example is shown where each sub-pixel has a top surface shape of an approximate hexagon with rounded corners.

[0399] In Fig.11F each sub-pixel is arranged inside a closely arranged hexagonal region. Each sub-pixel is arranged in such a way that when focusing on one sub-pixel, it is surrounded by six sub-pixels. In addition, it is arranged so that sub-pixels emitting light of the same color are not adjacent. For example, each sub-pixel is arranged in such a way that when focusing on the sub-pixel 110R, it is surrounded by three sub-pixels 110G and three sub-pixels 110B that are alternately arranged.

[0400] Fig.11G An example is shown where the sub-pixels of each color are arranged in a zigzag shape. Specifically, when viewed from above, the positions of the upper sides of two sub-pixels (for example, sub-pixel 110R and sub-pixel 110G or sub-pixel 110G and sub-pixel 110B) arranged in the row direction are offset.

[0401] In FIG. 11A to FIG. 11GAmong the pixels shown, for example, it is preferable that the sub-pixel 110R is a sub-pixel R that emits red light, the sub-pixel 110G is a sub-pixel G that emits green light, and the sub-pixel 110B is a sub-pixel B that emits blue light. Note that the structure of the sub-pixels is not limited to this, and the color presented by the sub-pixels and their arrangement order can be appropriately determined. For example, the sub-pixel 110G can be set as the sub-pixel R that emits red light, and the sub-pixel 110R can be set as the sub-pixel G that emits green light.

[0402] In photolithography, the finer the pattern to be processed, the more the influence of light diffraction cannot be ignored. Therefore, when transferring the pattern of the photomask through exposure, its fidelity deteriorates, and it is difficult to process the resist mask into the desired shape. Therefore, even if the pattern of the photomask is rectangular, it is easy to form a pattern with rounded corners. Therefore, the top surface shape of the sub-pixels sometimes has a polygonal shape with rounded corners, an oval shape, or a circular shape, etc.

[0403] Moreover, in the manufacturing method of a light-emitting device according to one embodiment of the present invention, the organic compound layer is processed into an island shape using a resist mask. The resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat-resistant temperature of the organic compound layer. Therefore, depending on the heat-resistant temperature of the material of the organic compound layer and the curing temperature of the resist material, the curing of the resist film may sometimes be insufficient. An insufficiently cured resist film may sometimes take a shape that deviates from the desired shape when being processed. As a result, the top surface shape of the organic compound layer sometimes has a polygonal shape with rounded corners, an oval shape, or a circular shape, etc. For example, when a resist mask with a square top surface shape is to be formed, a resist mask with a circular top surface shape may sometimes be formed and the top surface shape of the organic compound layer is circular.

[0404] In order to make the top surface shape of the organic compound layer take the desired shape, a technique of pre-correcting the mask pattern so that the designed pattern and the transferred pattern are consistent (OPC (Optical Proximity Correction) technique) can also be used. Specifically, in the OPC technique, for example, correction patterns are added to the graphic corners on the mask pattern.

[0405] As FIG. 12A to FIG. 12I shown, a pixel can include four types of sub-pixels.

[0406] FIG. 12A to FIG. 12C The pixel 178 shown adopts a stripe arrangement.

[0407] Fig. 12A An example is shown where each sub-pixel has a rectangular top surface shape. Fig. 12B An example is shown where each sub-pixel has a top surface shape connecting two semi-circles and a rectangle. Fig. 12C An example is shown where each sub-pixel has an oval top surface shape.

[0408] FIG. 12D to FIG. 12F The pixels 178 shown are arranged in a matrix.

[0409] Fig.12D An example is shown in which each sub-pixel has a square top surface shape. Fig.12E An example is shown in which each sub-pixel has an approximately square top surface shape with rounded corners. Fig.12F An example is shown in which each sub-pixel has a circular top surface shape.

[0410] Figure 12G and Fig.12H An example is shown in which one pixel 178 is composed of two rows and three columns.

[0411] Figure 12G The pixel 178 shown includes three sub-pixels (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B) in the upper row (the first row) and one sub-pixel (sub-pixel 110W) in the lower row (the second row). In other words, the pixel 178 includes sub-pixel 110R in the left column (the first column), sub-pixel 110G in the central column (the second column), sub-pixel 110B in the right column (the third column), and sub-pixel 110W spanning these three columns.

[0412] Fig.12H The pixel 178 shown includes three sub-pixels (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B) in the upper row (the first row) and three sub-pixels 110W in the lower row (the second row). In other words, the pixel 178 includes sub-pixel 110R and sub-pixel 110W in the left column (the first column), sub-pixel 110G and sub-pixel 110W in the central column (the second column), and sub-pixel 110B and sub-pixel 110W in the right column (the third column). As Fig.12H shown, by making the configurations of the sub-pixels in the upper and lower rows consistent, for example, it is possible to efficiently remove the debris that may be generated in the manufacturing process. Thereby, a light-emitting device with high display quality can be provided.

[0413] In Figure 12G and Fig.12H In the pixel 178 shown, the sub-pixels 110R, 110G, and 110B are arranged in a stripe pattern, so the display quality can be improved.

[0414] Fig.12I An example is shown in which one pixel 178 is composed of three rows and two columns.

[0415] Fig.12IThe pixel 178 shown includes sub-pixel 110R in the upper row (the first row), sub-pixel 110G in the central row (the second row), sub-pixel 110B spanning the first row to the second row, and one sub-pixel (sub-pixel 110W) in the lower row (the third row). In other words, the pixel 178 includes sub-pixel 110R and sub-pixel 110G in the left column (the first column), sub-pixel 110B in the right column (the second column), and sub-pixel 110W spanning these two columns.

[0416] In Fig.12I In the pixel 178 shown, the layout of sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B is a so-called S stripe arrangement, so the display quality can be improved.

[0417] FIG. 12A to FIG. 12I The pixel 178 shown is composed of four sub-pixels: sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, and sub-pixel 110W. For example, sub-pixel 110R can be set as a sub-pixel that emits red light, sub-pixel 110G can be set as a sub-pixel that emits green light, sub-pixel 110B can be set as a sub-pixel that emits blue light, and sub-pixel 110W can be set as a sub-pixel that emits white light. In addition, at least one of sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, and sub-pixel 110W can be set as a sub-pixel that emits cyan light, magenta light, yellow light, or near-infrared light.

[0418] As described above, in a light-emitting device according to one embodiment of the present invention, various layouts can be adopted for pixels composed of sub-pixels including light-emitting devices.

[0419] This embodiment can be appropriately combined with other embodiments or examples. In addition, in this specification, when multiple structural examples are shown in one embodiment, the structural examples can be appropriately combined.

[0420] Embodiment 5 In this embodiment, a display device according to one embodiment of the present invention will be described.

[0421] The display device of this embodiment can be a high-definition display device. Therefore, for example, the display device of this embodiment can be used as a display unit of information terminal devices (wearable devices) such as watch-type and bracelet-type devices, and a display unit of wearable devices worn on the head such as VR devices (HMD) and glasses-type AR devices.

[0422] In addition, the display device of the present embodiment can be a high-resolution display device or a large display device. Therefore, for example, the display device of the present embodiment can be used as the display unit of the following devices: electronic devices with a large screen such as a television device, a desktop or notebook personal computer, a display for a computer, etc., a digital signage, a large game machine such as a pachinko machine; a digital camera; a digital video camera; a digital photo frame; a mobile phone; a portable game machine; a portable information terminal; and a sound reproduction device.

[0423] [Display module] Fig.13A A perspective view showing the display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any one of the display devices 100B to 100E to be described later.

[0424] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display unit 281. The display unit 281 is an image display area in the display module 280, and light from each pixel provided in the following pixel unit 284 can be seen.

[0425] Fig. 13B It is a perspective schematic view of the structure on the side of the substrate 291. A circuit unit 282 is laminated on the substrate 291, a pixel circuit unit 283 is laminated on the circuit unit 282, and a pixel unit 284 is laminated on the pixel circuit unit 283. In addition, a terminal unit 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel unit 284. The terminal unit 285 and the circuit unit 282 are electrically connected through a wiring unit 286 composed of a plurality of wirings.

[0426] The pixel unit 284 includes a plurality of pixels 284a arranged periodically. Fig. 13B An enlarged view of one pixel 284a is shown on the right side of. The pixel 284a can adopt various structures described in the above embodiment.

[0427] The pixel circuit unit 283 includes a plurality of pixel circuits 283a arranged periodically.

[0428] One pixel circuit 283a controls the driving of a plurality of elements included in one pixel 284a.

[0429] The circuit unit 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit unit 283. For example, it preferably includes one or both of a gate line driving circuit and a source line driving circuit. In addition, it may also have at least one of an arithmetic circuit, a storage circuit, and a power supply circuit, etc.

[0430] The FPC 290 serves as a wiring for supplying a video signal, a power potential, etc. from the outside to the circuit section 282. In addition, an IC can also be mounted on the FPC 290.

[0431] The display module 280 can adopt a structure in which one or both of the pixel circuit section 283 and the circuit section 282 are stacked on the lower side of the pixel section 284, so that the display section 281 can have an extremely high aperture ratio (effective display area ratio).

[0432] Such a high-definition display module 280 is suitable for VR devices such as HMDs or glasses-type AR devices. For example, since the display module 280 has an extremely high-definition display section 281, in the structure of viewing the display section of the display module 280 through a lens, even if the display section is magnified by the lens, the user cannot see the pixels, and thus a highly immersive display can be achieved. In addition, the display module 280 can also be applied to electronic devices with a relatively small display section.

[0433] [Display Device 100A] Fig.14A The shown display device 100A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.

[0434] The substrate 301 corresponds to Fig.13A and Fig. 13B the substrate 291 in

[0435] In addition, an element isolation layer 315 is provided between two adjacent transistors 310 in a manner of being embedded in the substrate 301.

[0436] In addition, an insulating layer 261 is provided to cover the transistor 310, and a capacitor 240 is provided on the insulating layer 261.

[0437] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 serves as one electrode of the capacitor 240, the conductive layer 245 serves as the other electrode of the capacitor 240, and the insulating layer 243 serves as the dielectric of the capacitor 240.

[0438] The conductive layer 241 is disposed on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 through a plug 271 embedded in the insulating layer 261. The insulating layer 243 is disposed so as to cover the conductive layer 241. The conductive layer 245 is disposed in a region overlapping the conductive layer 241 with the insulating layer 243 therebetween.

[0439] An insulating layer 255 is disposed so as to cover the capacitor 240. An insulating layer 174 is disposed on the insulating layer 255, and an insulating layer 175 is disposed on the insulating layer 174. Light-emitting devices 130R, 130G, and 130B are disposed on the insulating layer 175. An insulator is disposed in a region between adjacent light-emitting devices.

[0440] The insulating layer 156R is disposed so as to include a region overlapping the side surface of the conductive layer 151R, the insulating layer 156G is disposed so as to include a region overlapping the side surface of the conductive layer 151G, and the insulating layer 156B is disposed so as to include a region overlapping the side surface of the conductive layer 151B. In addition, the conductive layer 152R is disposed so as to cover the conductive layer 151R and the insulating layer 156R, the conductive layer 152G is disposed so as to cover the conductive layer 151G and the insulating layer 156G, and the conductive layer 152B is disposed so as to cover the conductive layer 151B and the insulating layer 156B. The sacrificial layer 158R is located on the organic compound layer 103R, the sacrificial layer 158G is located on the organic compound layer 103G, and the sacrificial layer 158B is located on the organic compound layer 103B.

[0441] The conductive layers 151R, 151G, and 151B are electrically connected to one of the source and drain of the transistor 310 through plugs 256 embedded in the insulating layers 243, 255, 174, and 175, the conductive layer 241 embedded in the insulating layer 254, and the plug 271 embedded in the insulating layer 261. Various conductive materials can be used for the plugs.

[0442] In addition, a protective layer 131 is disposed on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. Details of the components from the light-emitting devices 130 to the substrate 120 can be referred to in Embodiment 4. The substrate 120 corresponds to Fig.13A the substrate 292.

[0443] Fig. 14B shows Fig.14A a modified example of the display device 100A shown. Fig. 14BThe display device shown includes a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B, and the light-emitting device 130 has an area overlapping one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. In Fig. 14B In the display device shown, the light-emitting device 130 can emit white light, for example. In addition, for example, the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B can transmit red light, green light, and blue light, respectively.

[0444] [Display device 100B] Fig.15 A perspective view showing the display device 100B is shown, Fig.16 A cross-sectional view showing the display device 100C is shown.

[0445] The display device 100B has a structure in which a bonding substrate 352 and a substrate 351 are bonded. In Fig.15 The substrate 352 is shown by a dashed line.

[0446] The display device 100B includes a pixel portion 177, a connection portion 140, a circuit 356, a wiring 355, and the like. Fig.15 An example in which the display device 100B is mounted with an IC 354 and an FPC 353 is shown. Therefore, it is also possible to Fig.15 The structure shown is also referred to as a display module including the display device 100B, an IC (integrated circuit), and an FPC. Here, the substrate of the display device on which a connector such as an FPC is mounted or the substrate on which an IC is mounted is referred to as a display module.

[0447] The connection portion 140 is provided outside the pixel portion 177. The connection portion 140 can be one or more. In the connection portion 140, the common electrode of the light-emitting device is electrically connected to the conductive layer, and power can be supplied to the common electrode.

[0448] As the circuit 356, for example, a scan line driving circuit can be used.

[0449] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or input to the wiring 355 from the IC 354.

[0450] Fig.15 An example in which an IC 354 is provided on the substrate 351 by a COG (Chip On Glass) method or a COF (Chip On Film) method or the like is shown. As the IC 354, for example, an IC including a scan line driving circuit or a signal line driving circuit or the like can be used. Note that the display device 100B and the display module do not necessarily have to be provided with an IC. In addition, for example, the IC can also be mounted on the FPC by the COF method.

[0451] Fig.16 As shown by display device 100C Fig.15 An example of a cross-section of a part of the region including FPC 353, a part of circuit 356, a part of pixel section 177, a part of connection section 140, and a part of the region including the end portion of display device 100B in

[0452] [Display device 100C] Fig.16 The shown display device 100C includes transistor 201, transistor 205, light-emitting device 130R that emits red light, light-emitting device 130G that emits green light, light-emitting device 130B that emits blue light, etc. between substrate 351 and substrate 352.

[0453] Details of light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B can be referred to in Embodiment 4.

[0454] Light-emitting device 130R includes conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R. Light-emitting device 130G includes conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G. Light-emitting device 130B includes conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B.

[0455] Conductive layer 224R is connected to conductive layer 222b included in transistor 205 through an opening provided in insulating layer 214. The end portion of conductive layer 151R is located outside the end portion of conductive layer 224R. Insulating layer 156R is provided in a manner including a region in contact with the side surface of conductive layer 151R, and conductive layer 152R is provided to cover conductive layer 151R and insulating layer 156R.

[0456] Conductive layer 224G, conductive layer 151G, conductive layer 152G, insulating layer 156G in light-emitting device 130G and conductive layer 224B, conductive layer 151B, conductive layer 152B, insulating layer 156B in light-emitting device 130B are the same as conductive layer 224R, conductive layer 151R, conductive layer 152R, insulating layer 156R in light-emitting device 130R, so detailed description thereof is omitted.

[0457] Recesses are formed in conductive layer 224R, conductive layer 224G, and conductive layer 224B so as to cover the openings provided in insulating layer 214. The recesses are filled with layer 128.

[0458] Layer 128 has the function of flattening by having recesses filled with the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B. On the conductive layer 224R, the conductive layer 224G, the conductive layer 224B, and the layer 128, there are provided a conductive layer 151R, a conductive layer 151G, and a conductive layer 151B that are electrically connected to the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B. Therefore, the region overlapping the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B can also be used as a light-emitting region, and the aperture ratio of the pixel can be increased.

[0459] Layer 128 can also be an insulating layer or a conductive layer. Layer 128 can appropriately use various inorganic insulating materials, organic insulating materials, and conductive materials. In particular, layer 128 is preferably formed using an insulating material, and more preferably formed using an organic insulating material. Layer 128 can use, for example, the above-mentioned organic insulating material that can be used for the insulating layer 127.

[0460] On the light-emitting devices 130R, 130G, and 130B, there is provided a protective layer 131. The protective layer 131 and the substrate 352 are bonded by an adhesive layer 142. The substrate 352 is provided with a light-shielding layer 157. The light-emitting device 130 can be sealed using a solid-sealed structure or a hollow-sealed structure, etc. In Fig.16 this case, the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, that is, a solid-sealed structure is adopted. Alternatively, this space can also be filled with an inert gas (such as nitrogen or argon), that is, a hollow-sealed structure is adopted. At this time, the adhesive layer 142 can also be provided in a manner that does not overlap with the light-emitting device. In addition, this space can also be filled with a resin different from the adhesive layer 142 provided in a frame shape.

[0461] Fig.16 An example is shown in which the connection portion 140 includes a conductive layer 224C obtained by processing a conductive film the same as the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, a conductive layer 151C obtained by processing a conductive film the same as the conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, and a conductive layer 152C obtained by processing a conductive film the same as the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B. In addition, Fig.16 an example is shown in which the insulating layer 156C is provided in a manner that includes a region overlapping the side surface of the conductive layer 151C.

[0462] The display device 100C is a top-emission type display device. The light-emitting device emits light to the side of the substrate 352. The substrate 352 is preferably made of a material with high visible light transmittance. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0463] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are sequentially provided on a substrate 351. A part of the insulating layer 211 serves as a gate insulating layer for each transistor. A part of the insulating layer 213 serves as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistors. The insulating layer 214 is provided to cover the transistors and serves as a planarization layer. In addition, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistors, and it can be either one or two or more.

[0464] Preferably, an inorganic insulating film is used as the insulating layer 211, the insulating layer 213, and the insulating layer 215.

[0465] Preferably, an organic insulating layer is used as the insulating layer 214 serving as a planarization layer.

[0466] The transistors 201 and 205 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; conductive layers 222a and 222b serving as source and drain electrodes; a semiconductor layer 231; an insulating layer 213 serving as a gate insulating layer; and a conductive layer 223 serving as a gate.

[0467] A connection portion 204 is provided in a region of the substrate 351 not overlapped by the substrate 352. In the connection portion 204, a source electrode or a drain electrode of the transistor 201 is electrically connected to an FPC 353 through a conductive layer 166 and a connection layer 242. The following example is shown: The conductive layer 166 has a laminated structure of a conductive film obtained by processing a conductive film the same as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing a conductive film the same as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing a conductive film the same as the conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed on the top surface of the connection portion 204. Therefore, the connection portion 204 can be electrically connected to the FPC 353 through the connection layer 242.

[0468] Preferably, a light-shielding layer 157 is provided on a surface of the substrate 352 on the side of the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, in the connection portion 140, the circuit 356, etc. In addition, various optical members can be arranged outside the substrate 352.

[0469] Each of the substrate 351 and the substrate 352 can adopt a material that can be used for the substrate 120.

[0470] As the adhesive layer 142, a material that can be used for the resin layer 122 can be used.

[0471] As the connection layer 242, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

[0472] [Display device 100D] Fig.17 The illustrated display device 100D and Fig.16 The main difference from the illustrated display device 100C is that the display device 100D is a bottom emission type display device.

[0473] The light emitted by the light emitting device is emitted to the side of the substrate 351. The substrate 351 is preferably made of a material having high visible light transmittance. On the other hand, there is no limitation on the light transmittance of the material for the substrate 352.

[0474] It is preferable to form a light shielding layer 317 between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. Fig.17 An example is shown in which a light shielding layer 317 is provided on the substrate 351, an insulating layer 153 is provided on the light shielding layer 317, and transistors 201, 205, etc. are provided on the insulating layer 153.

[0475] The light emitting device 130R includes a conductive layer 112R, a conductive layer 126R on the conductive layer 112R, and a conductive layer 129R on the conductive layer 126R.

[0476] The light emitting device 130B includes a conductive layer 112B, a conductive layer 126B on the conductive layer 112B, and a conductive layer 129B on the conductive layer 126B.

[0477] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are all made of materials having high visible light transmittance. As the second electrode 102, a material that reflects visible light is preferably used.

[0478] Note that although Fig.17 the light emitting device 130G is not shown in the figure, the light emitting device 130G is also provided.

[0479] In addition, Fig.17 Examples such as show that the top surface of the layer 128 has a flat portion, but the shape of the layer 128 is not particularly limited.

[0480] [Display device 100D2] Fig.18A The illustrated display device 100D2 is the same as Fig.17The display device 100D shown is an example of a different bottom emission type display device. The display device 100D2 is different from the display device 100D in that it includes an organic resin layer 180. Note that in the drawings, sometimes the symbols of the same constituent elements are omitted, and for the detailed content thereof, reference can be made to Fig.17 the description of Fig.17 .

[0481] In addition, Fig.18B A top view layout of pixels 178 (pixels 178a and 178b) including sub-pixels 110 (sub-pixels 110R, sub-pixels 110G, sub-pixels 110B, sub-pixels 110W) is shown. Fig.18C A top view of the organic resin layer 180 in the region where the sub-pixels 110R and 110G included in the pixel 178 are formed is shown. In addition, the width 110Rw of the light emitting region of the sub-pixel 110R is between the light shielding layers 317 and 317.

[0482] As Fig.18A shown, the organic resin layer 180 is provided on the insulating layer 214. As Fig.18A the region surrounded by the dotted line in Fig.18C shown, the organic resin layer 180 includes concave portions 181 (concave portions 181a, 181b) having curved surfaces at least in the region where the sub-pixels are formed. Note that the concave portion 181 may also be provided outside the light emitting region as in the concave portion 181c. By providing the concave portion 181c, the light generated in the region overlapping with the light shielding layer 317 or the light traveling toward the region overlapping with the light shielding layer 317 can be refracted and extracted from the light emitting region to the outside, thereby improving the light emitting efficiency.

[0483] In addition, a plurality of concave portions 181 may be formed in a matrix. The concave portions 181a and 181b may be provided in contact with each other, or may be provided with a plane therebetween.

[0484] In addition, although 18A to 18C it is shown that the top surface shape of the concave portion is hexagonal ( Fig.18C ), and the cross-sectional shape is semi-circular ( Fig.18A ), it may have other shapes as needed. For example, the top surface shape of the concave portion may also be a triangle, a quadrangle (including a rectangle, a square), a pentagon, or other polygons, a polygon with rounded corners, an ellipse, or a circle.

[0485] As the organic resin layer 180, an insulating layer containing an organic material can be used. For example, as the organic resin layer 180, an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimide amide resin, a silicone resin, a siloxane resin, a benzocyclobutene resin, a phenolic resin, or a precursor of the above resins can be used. In addition, as the organic resin layer 180, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can also be used.

[0486] In addition, as the organic resin layer 180, a photosensitive resin can also be used. As the photosensitive resin, a photoresist can also be used. The photosensitive resin can be a positive-type material or a negative-type material.

[0487] The organic resin layer 180 can also contain a material that absorbs visible light. For example, the organic resin layer 180 itself can be composed of a material that absorbs visible light, and the organic resin layer 180 can also contain a pigment that absorbs visible light. As the organic resin layer 180, for example, the following resins can be used: a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light; or a resin that contains carbon black as a pigment and is used as a black matrix; etc.

[0488] In addition, a first electrode 101 (first electrodes 101R and 101W) is included on the organic resin layer 180, and an organic compound layer 103 is included on the first electrode 101. The ends of the first electrode 101 and the organic compound layer 103 can be covered by an insulating layer 127.

[0489] In addition, the first electrode 101 formed on the organic resin layer 180 also has a recess along the recess of the organic resin layer 180. In addition, the organic compound layer 103 formed on the first electrode 101 also has a recess along the recess of the first electrode 101. In addition, the common layer 104 formed on the organic compound layer 103 also has a recess along the recess of the organic compound layer 103. In addition, the second electrode 102 formed on the common layer 104 also has a recess along the recess of the common layer 104. That is, the recesses of the organic resin layer 180, the first electrode 101, the organic compound layer 103, the common layer 104, and the second electrode 102 have an overlapping structure with each other.

[0490] In addition, a common layer 104 is included on the organic compound layer 103 and the insulating layer 127, and a second electrode 102 is included on the common layer 104. A protective layer 131 is provided on the second electrode 102 and is bonded to the substrate 352 via an adhesive layer 142.

[0491] Note that although Fig.18AThe light-emitting devices 130G and 130B are not shown in the figure, but the light-emitting devices 130G and 130B are also provided.

[0492] In a light-emitting device according to an embodiment of the present invention including the organic resin layer 180 as described above, as described in Embodiment 1, since the organic compound layer 103 contains an organic compound represented by the general formula (G1), an organic semiconductor device having high luminous efficiency can be provided by the inseparable effect of the organic resin layer 180 and the organic semiconductor device using the organic compound of the present invention, and thus an organic semiconductor device with high reliability, low driving voltage, and low power consumption can be provided.

[0493] [Display device 100E] Fig.19 The shown display device 100E is Fig.16 a modified example of the shown display device 100C. The main difference between the display device 100E and the display device 100C is that it includes a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B.

[0494] In the display device 100E, the light-emitting device 130 has an area overlapping one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. The coloring layer 132R, the coloring layer 132G, and the coloring layer 132B may be provided on the surface of the substrate 351 on the side of the substrate 352. The ends of the coloring layer 132R, the ends of the coloring layer 132G, and the ends of the coloring layer 132B may overlap the light-shielding layer 157.

[0495] In the display device 100E, the light-emitting device 130 can emit white light, for example. In addition, for example, the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B can transmit red light, green light, and blue light, respectively. In addition, the display device 100E may also adopt a structure in which the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B are provided between the protective layer 131 and the adhesive layer 142.

[0496] [Display device 100E2] Fig. 20A The shown display device 100E2 is Fig.19 a modified example of the shown display device 100E, and includes microlenses 182 on the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. Note that in the drawings, the symbols of the same components are sometimes omitted, and for the detailed content thereof, reference can be made to Fig.19 the description of Fig.19 .

[0497] In addition, Fig. 20BA top view layout showing pixels 178 (pixels 178a and 178b) including sub-pixels 110 (sub-pixels 110R, sub-pixels 110G, sub-pixels 110B) is shown. Fig. 20C A top view of a microlens 182 in a region where sub-pixels 110R and sub-pixels 110G included in pixel 178 are formed is shown. Note that the region where the common electrode 155 contacts the organic compound layer 103 is the width 110Gw in the light-emitting region of sub-pixel 110G.

[0498] Fig. 20A In the shown display device 100E2, a planarization film 143 is provided on the protective layer 131, and a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B are provided on the planarization film 143. A planarization film 144 is provided so as to cover the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. The display device 100E2 provides a microlens 182 on the planarization film 144.

[0499] In addition, as Fig. 20C shown, a microlens 182 can be provided in each sub-pixel in the region where sub-pixels are formed.

[0500] Note that although Fig. 20C the top surface shape of the microlens 182 is shown as hexagonal, it can also have other shapes as needed. For example, the top surface shape of the microlens 182 can also be a triangle, a quadrangle (including a rectangle, a square), a pentagon, etc., a polygon with rounded corners, an oval, or a circle.

[0501] The microlens 182 can be formed using the same material as the organic resin layer 180.

[0502] In a light-emitting device according to one aspect of the present invention including the microlens 182 as described above, as described in Embodiment 1, since the organic compound layer 103 contains an organic compound represented by the general formula (G1), by the inseparable effect of the microlens 182 and an organic semiconductor device using the organic compound of the present invention, an organic semiconductor device with high luminous efficiency can be provided, and thus an organic semiconductor device most suitable for a mobile display with high reliability, low driving voltage, and low power consumption can be provided.

[0503] This embodiment can be appropriately combined with other embodiments or examples. In addition, in this specification, when multiple structural examples are shown in one embodiment, the structural examples can be appropriately combined.

[0504] Embodiment 6 In this embodiment, an electronic device according to one aspect of the present invention is described.

[0505] The electronic device of the present embodiment includes, in a display unit, a light-emitting device according to one aspect of the present invention. The light-emitting device according to one aspect of the present invention has high reliability and is easily high-definition and high-resolution. Therefore, it can be used for the display units of various electronic devices.

[0506] Examples of the electronic device include, in addition to electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, monitors for computers, digital signage, and large game machines such as pachinko machines, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, and sound reproduction devices.

[0507] In particular, since the light-emitting device according to one aspect of the present invention can improve clarity, it can be suitably used for electronic devices including relatively small display units. Examples of such electronic devices include watch-type and bracelet-type information terminal devices (wearable devices), wearable devices that can be worn on the head such as VR devices such as head-mounted displays, glasses-type AR devices, and MR (Mixed Reality) devices.

[0508] The light-emitting device according to one aspect of the present invention preferably has an extremely high resolution such as HD (number of pixels: 1280×720), FHD (number of pixels: 1920×1080), WQHD (number of pixels: 2560×1440), WQXGA (number of pixels: 2560×1600), 4K (number of pixels: 3840×2160), 8K (number of pixels: 7680×4320), etc. In particular, it is preferably set to a resolution of 4K, 8K, or higher. In addition, the pixel density (clarity) of the light-emitting device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, further preferably 1000 ppi or more, still further preferably 2000 ppi or more, still further preferably 3000 ppi or more, yet further preferably 5000 ppi or more, and further preferably 7000 ppi or more. By using the light-emitting device having one or both of high resolution and high clarity as described above, the sense of reality and depth can be further improved. In addition, there is no particular limitation on the screen ratio (aspect ratio) of the light-emitting device according to one aspect of the present invention. For example, the light-emitting device can be adapted to various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0509] The electronic device of the present embodiment may also include a sensor (the sensor has a function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electric power, radiation, flow rate, humidity, inclination, vibration, odor, or infrared rays).

[0510] The electronic device of this embodiment can have various functions. For example, it can have the following functions: the function of displaying various information (such as still images, moving images, text images, etc.) on the display unit; the function of a touch panel; the function of displaying a calendar, date, time, etc.; the function of executing various software (programs); the function of performing wireless communication; the function of reading programs or data stored in a storage medium; etc.

[0511] Use FIG. 21A to FIG. 21D An example of a wearable device that can be worn on the head will be described. These wearable devices have at least one of the functions of displaying AR content, displaying VR content, displaying SR (Substitutional Reality) content, and displaying MR content. When the electronic device has the function of displaying at least one of AR, VR, SR, MR, etc. content, the immersion of the user can be improved.

[0512] Fig.21A The illustrated electronic device 700A and Fig. 21B The illustrated electronic device 700B both include a pair of display panels 751, a pair of frames 721, a communication unit (not shown), a pair of mounting portions 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a bezel 757, and a pair of nose pads 758.

[0513] The display panel 751 can apply the light-emitting device of one aspect of the present invention. Thereby, a highly reliable electronic device can be realized.

[0514] Both the electronic device 700A and the electronic device 700B can project the image displayed by the display panel 751 onto the display area 756 in the optical member 753. Since the optical member 753 has translucency, the user can see the image displayed in the display area overlapping with the transmitted image seen through the optical member 753. Therefore, both the electronic device 700A and the electronic device 700B are electronic devices capable of performing AR display.

[0515] A camera capable of photographing the front can also be provided as the imaging unit on the electronic device 700A and the electronic device 700B. In addition, by providing an acceleration sensor such as a gyro sensor on the electronic device 700A and the electronic device 700B, the orientation of the user's head can be detected and the image corresponding to that direction can be displayed on the display area 756.

[0516] The communication unit has a wireless communication device, and an image signal can be supplied through this wireless communication device, for example. In addition, instead of the wireless communication device or in addition to the wireless communication device, a connector capable of connecting a cable for supplying an image signal and a power potential can also be included.

[0517] In addition, the electronic device 700A and the electronic device 700B are provided with a battery and can be charged in one or both of a wireless manner and a wired manner.

[0518] The housing 721 may also be provided with a touch sensor module. The touch sensor module has a function of detecting whether the outer surface of the housing 721 is touched. Through the touch sensor module, various processes can be executed by detecting a tap operation or a swipe operation of the user. For example, processes such as temporarily stopping or playing a moving image can be executed by a tap operation, and processes such as fast forward and rewind can be executed by a swipe operation. In addition, by providing a touch sensor module in each of the two housings 721, the operation range can be expanded.

[0519] As the touch sensor module, various touch sensors can be used. For example, various methods such as a capacitive method, a resistive film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, and an optical method can be adopted. In particular, it is preferable to apply a capacitive method or an optical method sensor to the touch sensor module.

[0520] When using an optical touch sensor, a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as the light receiving element. One or both of an inorganic semiconductor and an organic semiconductor can be used in the active layer of the photoelectric conversion device.

[0521] Fig. 21C The illustrated electronic device 800A and Fig.21D the illustrated electronic device 800B each include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0522] The display unit 820 can apply a light emitting device according to one aspect of the present invention. Thereby, a highly reliable electronic device can be realized.

[0523] The display unit 820 is provided at a position inside the housing 821 where it can be seen through the lens 832. In addition, by displaying different images on each of the pair of display units 820, three-dimensional display using parallax can be performed.

[0524] The electronic device 800A and the electronic device 800B can both be referred to as VR-oriented electronic devices. A user wearing the electronic device 800A or the electronic device 800B can see the image displayed on the display unit 820 through the lens 832.

[0525] The electronic device 800A and the electronic device 800B preferably have a mechanism in which the left - right positions of the lens 832 and the display unit 820 can be adjusted so that the lens 832 and the display unit 820 are located at the most suitable positions according to the position of the user's eyes. In addition, it preferably has a mechanism in which the focus is adjusted by changing the distance between the lens 832 and the display unit 820.

[0526] The user can mount the electronic device 800A or the electronic device 800B on the head using the mounting part 823. For example, in Fig. 21C it, the mounting part 823 has a shape like the temple of glasses (also called temple wire, etc.), but is not limited to this. As long as the user can mount it, the mounting part 823 can have a shape such as a helmet type or a band type, for example.

[0527] The imaging unit 825 has a function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras can also be provided to be able to correspond to multiple perspectives such as telephoto and wide - angle.

[0528] Note that an example including the imaging unit 825 is shown here, and a distance measurement sensor (hereinafter, also called a detection unit) capable of measuring the distance to an object may be provided. In other words, the imaging unit 825 is one form of the detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as a lidar (Light Detection and Ranging) can be used. By using the image acquired by the camera and the image acquired by the distance image sensor, more information can be obtained, and more accurate attitude operations can be realized.

[0529] The electronic device 800A may also include a vibration mechanism used as a bone - conduction headphone. For example, any one or more of the display unit 820, the housing 821, and the mounting part 823 may adopt a structure including this vibration mechanism. Thus, there is no need to separately provide audio devices such as over - the - ear headphones, earphones, or speakers, and the user can enjoy images and sounds just by mounting the electronic device 800A.

[0530] The electronic device 800A and the electronic device 800B may also both include input terminals. For example, a cable for supplying an image signal from an image output device, etc. and power for charging a battery provided in the electronic device can be connected to the input terminals.

[0531] The electronic device according to one aspect of the present invention may also have a function of performing wireless communication with the headphone 750. The headphone 750 includes a communication unit (not shown) and has a wireless communication function. The headphone 750 can receive information (such as sound data) from the electronic device through the wireless communication function. For example, Fig.21A The illustrated electronic device 700A has a function of transmitting information to the earphone 750 through a wireless communication function. Additionally, for example Fig. 21C The illustrated electronic device 800A has a function of transmitting information to the earphone 750 through a wireless communication function.

[0532] Additionally, the electronic device may also include an earphone unit. Fig. 21B The illustrated electronic device 700B includes an earphone unit 727. For example, a structure in which the earphone unit 727 and the control unit are connected in a wired manner may be adopted. A part of the wiring connecting the earphone unit 727 and the control unit may also be disposed inside the housing 721 or the mounting portion 723.

[0533] Similarly, Fig.21D The illustrated electronic device 800B includes an earphone unit 827. For example, a structure in which the earphone unit 827 and the control unit 824 are connected in a wired manner may be adopted. A part of the wiring connecting the earphone unit 827 and the control unit 824 may also be disposed inside the housing 821 or the mounting portion 823. Additionally, the earphone unit 827 and the mounting portion 823 may also include magnets. Thus, the earphone unit 827 can be fixed to the mounting portion 823 by magnetic force, making storage easier, so it is preferable.

[0534] The electronic device may also include a sound output terminal capable of connecting to an earphone, a headset, or the like. Additionally, the electronic device may also include one or both of a sound input terminal and a sound input mechanism. As the sound input mechanism, for example, a sound collection device such as a microphone may be used. By providing the sound input mechanism to the electronic device, the electronic device can have the function of a so-called headset.

[0535] Thus, as an electronic device according to one aspect of the present invention, both the glasses type (such as the electronic devices 700A and 700B) and the goggles type (such as the electronic devices 800A and 800B) are preferable.

[0536] Additionally, an electronic device according to one aspect of the present invention can transmit information to an earphone in a wired or wireless manner.

[0537] Fig.22A The illustrated electronic device 6500 is a portable information terminal device that can be used as a smartphone.

[0538] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display unit 6502 has a touch panel function.

[0539] The display unit 6502 can use a light-emitting device according to one embodiment of the present invention. Thereby, an electronic device with high reliability can be realized.

[0540] Fig. 22B It is a schematic cross-sectional view of the end on the microphone 6506 side including the housing 6501.

[0541] On the display surface side of the housing 6501, a protective member 6510 having translucency is provided, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are provided in the space surrounded by the housing 6501 and the protective member 6510.

[0542] The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 using an adhesive layer (not shown).

[0543] In the region outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded-back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on the printed circuit board 6517.

[0544] The display panel 6511 can use a light-emitting device according to one embodiment of the present invention. Thereby, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic device. Further, by folding a part of the display panel 6511 to provide a connection portion with the FPC 6515 on the back surface of the pixel portion, a narrow-bezel electronic device can be realized.

[0545] Fig. 22C An example of a television device is shown. In the television device 7100, the display unit 7000 is assembled in the housing 7171. A structure in which the housing 7171 is supported by a bracket 7173 is shown here.

[0546] The display unit 7000 can use a light-emitting device according to one embodiment of the present invention. Thereby, an electronic device with high reliability can be realized.

[0547] It can be performed by using the operation switch provided in the housing 7171 and the separately provided remote control unit 7151. Fig. 22COperation of the television apparatus 7100 shown. Alternatively, a touch sensor may be provided in the display unit 7000, and the television apparatus 7100 may be operated by touching the display unit 7000 with a finger or the like. In addition, a display unit for displaying data output from the remote controller 7151 may be provided in the remote controller 7151. By using the operation keys or the touch panel provided in the remote controller 7151, channel and volume operations can be performed, and operations can be performed on the image displayed on the display unit 7000.

[0548] In addition, the television apparatus 7100 includes a receiver, a modem, and the like. General television broadcasts can be received by using the receiver. Furthermore, by connecting to a communication network in a wired or wireless manner through the modem, one-way (from the sender to the receiver) or two-way (between the sender and the receiver or between the receivers, etc.) information communication can be performed.

[0549] Fig.22D An example of a notebook personal computer is shown. The notebook personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. The display unit 7000 is assembled in the housing 7211.

[0550] The display unit 7000 can use the light-emitting device of one mode of the present invention. Thereby, a highly reliable electronic device can be realized.

[0551] Fig.22E and Fig.22F An example of a digital sign is shown.

[0552] Figure 22E The digital sign 7300 shown includes a housing 7301, a display unit 7000, a speaker 7303, and the like. In addition, it may further include an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, and the like.

[0553] Figure 22F A digital sign 7400 provided on a cylindrical column 7401 is shown. The digital sign 7400 includes a display unit 7000 provided along the curved surface of the column 7401.

[0554] In Figure 22E and Figure 22F the light-emitting device of one mode of the present invention can be used for the display unit 7000. Thereby, a highly reliable electronic device can be realized.

[0555] The larger the display unit 7000, the more information can be provided at one time. The larger the display unit 7000, the more likely it is to attract people's attention. For example, the advertising effect can be improved.

[0556] By using the touch panel for the display unit 7000, not only can static images or dynamic images be displayed on the display unit 7000, but also the user can intuitively perform operations, so it is preferred. In addition, when used for providing information such as route information or traffic information, the usability can be improved through intuitive operations.

[0557] As Figure 22E and Figure 22F shown, the digital signage 7300 or the digital signage 7400 preferably can be linked with an information terminal device 7311 or an information terminal device 7411 such as a smart phone carried by the user through wireless communication. For example, the advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal device 7311 or the information terminal device 7411. In addition, by operating the information terminal device 7311 or the information terminal device 7411, the display of the display unit 7000 can be switched.

[0558] In addition, a game can be executed on the digital signage 7300 or the digital signage 7400 with the screen of the information terminal device 7311 or the information terminal device 7411 as an operation unit (controller). Thus, an unspecified number of users can participate in the game simultaneously and enjoy the fun of the game.

[0559] Figures 23A to 23G The electronic device shown includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, a sensor 9007 (the sensor has the function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor or infrared rays), a microphone 9008, etc.

[0560] Figures 23A to 23G The electronic device shown has various functions. For example, it can have the following functions: the function of displaying various information (static images, dynamic images, text images, etc.) on the display unit; the function of a touch panel; the function of displaying a calendar, date or time, etc.; the function of controlling and processing by using various software (programs); the function of performing wireless communication; the function of reading out programs or data stored in a storage medium and processing them; etc. Note that the functions of the electronic device are not limited to the above functions, but can have various functions. The electronic device can include a plurality of display units. In addition, a camera or the like can also be provided in the electronic device to enable it to have the following functions: the function of shooting static images or dynamic images and storing the captured images in a storage medium (an external storage medium or a storage medium built in the camera); the function of displaying the captured images on the display unit; etc.

[0561] Next, a detailed description will be given of Figures 23A to 23G the electronic device shown.

[0562] Figure 23A FIG. is a perspective view showing a portable information terminal 9171. The portable information terminal 9171 can be used as, for example, a smart phone. Note that in the portable information terminal 9171, a speaker 9003, a connection terminal 9006, a sensor 9007, etc. may also be provided. In addition, as the portable information terminal 9171, text or image information can be displayed on a plurality of its faces. In Figure 23A an example of displaying three icons 9050 is shown. In addition, information 9051 shown by a dotted rectangle can be displayed on other faces of the display unit 9001. As an example of the information 9051, there is information prompting receipt of an e-mail, SNS, phone call, etc.; a title of an e-mail or SNS, etc.; a sender name of an e-mail or SNS, etc.; a date; a time; a battery level; a radio wave intensity, etc. Alternatively, an icon 9050, etc. can be displayed at a position where the information 9051 is displayed.

[0563] Figure 23B FIG. is a perspective view showing a portable information terminal 9172. The portable information terminal 9172 has a function of displaying information on three or more faces of the display unit 9001. Here, an example in which information 9052, information 9053, and information 9054 are respectively displayed on different faces is shown. For example, in a state where the portable information terminal 9172 is placed in an upper body pocket, the user can confirm the information 9053 displayed at a position seen from above the portable information terminal 9172. For example, the user can confirm this display without taking out the portable information terminal 9172 from the pocket, and thus can determine whether to answer a call.

[0564] Figure 23C FIG. is a perspective view showing a tablet terminal 9173. The tablet terminal 9173 can execute various application software such as a mobile phone, reading and editing of e-mails and articles, playing music, network communication, computer games, etc. The tablet terminal 9173 includes a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front surface of the housing 9000, operation keys 9005 serving as operation buttons on the left side surface of the housing 9000, and a connection terminal 9006 on the bottom surface.

[0565] Figure 23DFIG. 0 is a perspective view showing a wristwatch-type portable information terminal 9200. The portable information terminal 9200 can be used as, for example, a smart watch (registered trademark). In addition, the display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. Further, the portable information terminal 9200 can perform hands-free calling, for example, by communicating with a headset capable of wireless communication. Further, by using the connection terminal 9006, the portable information terminal 9200 can perform data transfer with other information terminals or can be charged. Charging can also be performed by wireless power supply.

[0566] Figures 23E to 23G FIG. 1 is a perspective view showing a foldable portable information terminal 9201. Further, Figure 23E FIG. 2 is a perspective view of the portable information terminal 9201 in an unfolded state, Figure 23G FIG. 3 is a perspective view of the folded state, Figure 23F FIG. 4 is a perspective view of an intermediate state when converting from one of the state of Figure 23E and the state of Figure 23G to the other. The portable information terminal 9201 has good portability in the folded state, and has strong display browsability in the unfolded state because it has a seamlessly joined large display area. The display unit 9001 included in the portable information terminal 9201 is supported by three frames 9000 connected by a hinge 9055. The display unit 9001 can be curved, for example, in a range of a curvature radius of 0.1 mm or more and 150 mm or less.

[0567] This embodiment can be appropriately combined with other embodiments or examples. Further, in this specification, in the case where a plurality of structural examples are shown in one embodiment, the structural examples can be appropriately combined. Example 1

[0568] [Synthesis Example 1] In this synthesis example, a method for synthesizing 4,8-bis(9H-carbazol-9-yl)-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8Cz2Bfpm), an organic compound represented by the structural formula (100), will be specifically described.

[0569] [Chemical Formula 17]

[0570] <Step 1: Synthesis of 4,8Cz2Bfpm> First, 2.4 g (10 mmol) of 4,8-dichlorobenzo[f][1]benzofuro[3,2-d]pyrimidine, 3.7 g (22 mmol) of 9H-carbazole, 1.9 g (20 mmol) of sodium tert-butoxide (abbreviation: tBuONa), and 0.14 g (0.34 mmol) of di-tert-butyl(2,2-diphenyl-1-methyl-1-cyclopropyl)phosphine (abbreviation: cBRIDP) were placed in a 200 mL three-necked flask. 100 mL of mesitylene was added to the mixture, and the mixture was stirred while reducing the pressure to degas. Then, 62 mg (0.17 mmol) of allyl chloride palladium(II) dimer was added to the mixture, and the mixture was heated and stirred at 140 °C for 31.5 hours under a nitrogen stream. After stirring, toluene was added to the mixture and filtered through diatomaceous earth to obtain a filtrate. The obtained filtrate was concentrated to obtain a solid. The obtained solid was purified by silica gel column chromatography (developing solvent: toluene). The obtained solid was recrystallized with toluene / ethanol to obtain 2.8 g of a pale yellow solid with a yield of 56%. 2.7 g of the obtained solid was sublimated and purified by gradient sublimation. The sublimation purification was carried out by heating at 260 °C under the conditions of a pressure of 3.3 Pa and an argon flow rate of 15 mL / min. After sublimation purification, 2.5 g of a pale yellow solid was obtained with a recovery rate of 91%. The synthesis scheme of Step 1 is shown in the following (a-1).

[0571] [Chemical formula 18]

[0572] <Properties of organic compounds> The following shows the results of analyzing a deuterated chloroform (abbreviation: CDCl3) solution of the pale yellow solid obtained in Step 1 above by nuclear magnetic resonance spectroscopy ( 1 1H-NMR). In addition, Figure 24 the spectrum of nuclear magnetic resonance spectroscopy ( 1 1H-NMR) is shown. From this result, it can be seen that in this synthesis example, 4,8Cz2Bfpm of one embodiment of the present invention represented by the above structural formula (100) was obtained.

[0573] 1 1H NMR (CDCl3, 300 MHz): δ = 7.31 - 7.55 (m, 10H), 7.86 - 7.94 (m, 4H), 8.17 - 8.21 (m, 4H), 8.56 (d, J1 = 1.2 Hz, 1H), 9.31 (s, 1H).

[0574] <Measurement of emission spectrum and absorption spectrum> Next, Figure 25 the measurement results of the absorption spectrum and emission spectrum of 4,8Cz2Bfpm in a toluene solution are shown. In addition,Figure 26 The absorption spectrum and emission spectrum of the thin film are shown. In addition, a solid thin film is formed on a quartz substrate by vacuum evaporation. In addition, the horizontal axis represents the wavelength, and the vertical axis represents the absorption intensity and the luminescence intensity.

[0575] A solid thin film is formed...

Claims

1. An organic compound represented by the general formula (G1): in, R 1 To R 8 Each independently represents hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, R 9 To R 11 each independently represents hydrogen, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, X represents an oxygen atom or a sulfur atom, Furthermore, A1 represents any one of the substituents represented by general formula (A-2) to general formula (A-4): Among them, R 20 To R 57 Each independently represents hydrogen, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. 2 . The organic compound according to claim 1 , wherein the lowest triplet excitation (T1) energy level of the organic compound is 2.95 eV or less and 2.75 eV or more.

3. The organic compound according to claim 1, wherein the organic compound is represented by structural formula (101) or structural formula (102):

4. A light emitting device, comprising: a first electrode; a second electrode; as well as a light-emitting layer between the first electrode and the second electrode, The light-emitting layer includes a first organic compound, a second organic compound and a blue light-emitting substance. The second organic compound has a benzofurano[3,2-d]pyrimidine skeleton or a benzothieno[3,2-d]pyrimidine skeleton, a first substituent, and a second substituent. The first substituent represents a carbazole skeleton, The second substituent represents any one of a carbazole skeleton, a dibenzofuran skeleton, a tetraphenylsilane skeleton, and a triphenylene skeleton, The first substituent is bonded to the 4-position of the benzofurano[3,2-d]pyrimidine skeleton or the 4-position of the benzothieno[3,2-d]pyrimidine skeleton, The second substituent is bonded to the 8-position of the benzofurano[3,2-d]pyrimidine skeleton or the 8-position of the benzothieno[3,2-d]pyrimidine skeleton, Furthermore, an absolute value of a difference between a HOMO energy level of the first organic compound and a LUMO energy level of the second organic compound is greater than or equal to 2.78 eV and less than or equal to 2.85 eV.

5. A light emitting device, comprising: a first electrode; a second electrode; as well as a light-emitting layer between the first electrode and the second electrode, The light-emitting layer comprises a first organic compound, a second organic compound represented by the general formula (G1), and a blue light-emitting substance. The absolute value of the difference between the HOMO energy level of the first organic compound and the LUMO energy level of the second organic compound is 2.78 eV or more and 2.85 eV or less, Among them, R 1 To R 8 Each independently represents hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, X represents an oxygen atom or a sulfur atom, A1 represents any one of the substituents represented by general formula (A-1) to general formula (A-5): And, R 12 To R 57 Each independently represents hydrogen, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

6. The light-emitting device according to claim 5, wherein the second organic compound is represented by structural formula (100), structural formula (101), structural formula (102) or structural formula (103): 7 . The light emitting device according to claim 4 , wherein the first organic compound and the second organic compound are a combination that forms an exciplex. The light-emitting device according to claim 4 , wherein an emission spectrum of the light-emitting substance is greater than or equal to 400 nm and less than 490 nm.

9. The light emitting device according to claim 4, wherein the light emitting substance is a phosphorescent material.

10. The light emitting device according to claim 4, wherein the light emitting layer comprises a fluorescent sensitizer.

11. The light emitting device according to claim 5, wherein the first organic compound and the second organic compound are a combination that forms an exciplex. 12 . The light-emitting device according to claim 5 , wherein an emission spectrum of the light-emitting substance is greater than or equal to 400 nm and less than 490 nm. The light emitting device according to claim 5 , wherein the light emitting substance is a phosphorescent material. The light emitting device according to claim 5 , wherein the light emitting layer comprises a fluorescent sensitizer.

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