Aqueous liquid photosensitive photoresist and preparation method thereof

Abstract

The invention relates to the technical field of photoresists, in particular to a water-based liquid photosensitive photoresist and a preparation method of the water-based liquid photosensitive photoresist. Comprising the following raw materials: 50 to 70 parts of an acrylic resin emulsion, 2 to 5 parts of a monomer composition, 8 to 12 parts of ethoxylated trimethylolpropane triacrylate, 3 to 6 parts of a photoacid generator, 0.5 to 1.5 parts of a thickening agent, 1 to 3 parts of modified perfluoropolyether ammonium carboxylate, 0.2 to 0.4 part of an anti-shrinkage agent and 20 to 24 parts of deionized water. The aqueous liquid photosensitive photoresist prepared by the invention has excellent etching resistance and high resolution, and the preparation method is simple.

Description

Technical Field

[0001] The present invention relates to the technical field of photoresists, and particularly relates to an aqueous liquid photosensitive photoresist and a preparation method thereof. Background Art

[0002] A photoresist, also known as a photo resist, refers to a material whose solubility changes after being irradiated or radiated by ultraviolet light, electron beam, ion beam, X-ray, etc. Photoresists are classified into two major categories, positive and negative, according to the images they form. In the photoresist process, after coating exposure and development, the exposed part is dissolved and the unexposed part remains. This coating material is a positive photoresist. Traditional photosensitive photoresists generally use acetone, ethanol, chloroform, etc. as solvents. These organic solvents not only cause environmental pollution but also have high volatility during use, which may pose a hazard to the health of operators. In addition, with the increasingly strict environmental protection regulations, reducing the use of solvents and finding more environmentally friendly alternative solvents are important directions for the research and development of lithography technology. The research on aqueous photoresists is relatively less, and most existing aqueous photoresists have problems such as poor etching resistance and low resolution, making it difficult to meet the high-precision and high-resolution lithography requirements.

[0003] Patent CN117986503A discloses a preparation method of a water-soluble photoresist based on triplet-triplet annihilation photon upconversion. By using amphiphilic surfactant molecules to assemble into micelles, and utilizing the hydrophobicity inside and hydrophilicity outside the micelles, the lipophilic photosensitizer platinum octaethylporphyrin and the annihilator 9,10-dibenzylanthracene are encapsulated in the hydrophobic cavity of the micelles and dispersed in an aqueous solution. Then, the micelle molecules are combined with the water-soluble initiator lithium phenyl(2,4,6-trimethylbenzoyl)phosphate and the monomer polyethylene glycol diacrylate to prepare a water-soluble photoresist based on triplet-triplet annihilation photon upconversion. Finally, the energy of photon upconversion can be transferred to the initiator molecules by continuously laser-exciting the photosensitizer of the upconversion system to initiate the polymerization of the water-soluble monomer. The method of this invention is simple to operate and can be extended to different photosensitizer and annihilator molecules. At the same time, the method of this invention also expands the printing application in the aqueous solution environment. However, the acrylic resin formed by the polymerization of polyethylene glycol diacrylate monomer has poor etching resistance.

[0004] Patent CN114647149A discloses a water-based multi-purpose silk photoresist based on transgenic EvH composite silk and its preparation method. The water-based multi-purpose silk photoresist is prepared from the silk of a silkworm strain with transgenic bagworm repeat motif EvH, and it includes the silk fibroin of transgenic bagworm and an aqueous solvent. This invention industrializes the silkworm silk. Based on the good biocompatibility, biodegradability, physical and chemical stability of silkworm silk, a water-based photoresist is prepared using silkworm silk protein, meeting the environmental friendliness of the processing technology. The photoresist of this invention genetically modifies natural silkworm silk protein and realizes high-resolution micro-nano patterns based on the balance control between mechanical properties and molecular weight. However, the preparation method of this photoresist is complex and difficult to industrialize.

[0005] Therefore, there is an urgent need in the market to develop a water-based liquid photosensitive photoresist with a simple preparation method and excellent etching resistance. Summary of the Invention

[0006] Aiming at the problems existing in the prior art, the purpose of the present invention is to obtain a water-based liquid photosensitive photoresist with excellent etching resistance, high resolution, and a simple preparation method.

[0007] In order to achieve the above purpose, the technical solutions adopted by the present invention are as follows:

[0008] On the one hand, the present invention provides a water-based liquid photosensitive photoresist, which includes the following raw materials in parts by weight: 50 - 70 parts of acrylic resin emulsion, 2 - 5 parts of monomer composition, 8 - 12 parts of ethoxylated trimethylolpropane triacrylate, 3 - 6 parts of photoacid generator, 0.5 - 1.5 parts of thickener, 1 - 3 parts of modified perfluoropolyether carboxylic acid ammonium, 0.2 - 0.4 parts of anti-cratering agent, and 20 - 24 parts of deionized water.

[0009] The water-based liquid photosensitive photoresist obtained by mixing acrylic resin, monomer composition, ethoxylated trimethylolpropane triacrylate, photoacid generator, thickener, modified perfluoropolyether carboxylic acid ammonium, anti-cratering agent, and deionized water in this application has excellent etching resistance, high resolution, and a simple preparation method. By adding ethoxylated trimethylolpropane triacrylate to the photoresist system in this application, a cross-linked structure can be formed during the curing process of the photoresist, which is beneficial to improving the adhesion of the coating to enhance its etching resistance.

[0010] In some embodiments, the acid value of the acrylic resin emulsion is 80 - 100mgKOH / g.

[0011] In some embodiments, the preparation method of the monomer composition includes the following steps: adding octafluoropentyl methacrylate to the amino acrylic monomer and stirring at 30 - 40°C for 1 - 3h to obtain the monomer composition.

[0012] By adding a monomer composition to the photoresist in the present application, the etching resistance and resolution of the acrylate resin can be improved. This may be because the cured acrylate resin segments contain fluorine branches and amino functional groups. The introduction of fluorine branches can increase the transmittance of the photoresist at a specific wavelength, thereby increasing the acidity and sensitivity of the photoresist, and thus achieving higher lithography efficiency. Moreover, the fluorine branches can effectively inhibit the migration of photoacids, thereby reducing defects after development and further improving the resolution of the photoresist. The acrylate resin after lithography contains amino functional groups, which can form chemical bonds with hydroxyl groups or other active groups on the substrate surface, thereby enhancing the adhesion of the photoresist to the substrate and keeping it stable during the etching and cleaning processes. And in the present application, by first co-mixing octafluoropentyl methacrylate and aminoacrylate monomers into a monomer composition and then copolymerizing with the acrylate resin, the adhesion of the fluorinated acrylate resin segments to the substrate can be further improved, which is beneficial to enhancing its etching resistance. This may be because there is a strong hydrogen bond interaction between the fluorine branches and the amino groups. After co-blending octafluoropentyl methacrylate and aminoacrylate monomers, the amino groups tend to be distributed near the fluorine branches, which is beneficial to further enhancing the adhesion of the fluorinated acrylate resin segments to the substrate.

[0013] In some embodiments, the mass ratio of octafluoropentyl methacrylate to aminoacrylate monomer is 1:(0.4 - 0.7).

[0014] By limiting the ratio of octafluoropentyl methacrylate to aminoacrylate monomer in the present application, the photoresist can have good etching resistance and good resolution at the same time.

[0015] In some embodiments, the aminoacrylate monomer is one or more of dimethylaminoethyl methacrylate, dimethylaminoethyl acrylate, diethylaminoethyl methacrylate, diethylaminoethyl acrylate, tert-butylaminoethyl methacrylate, and tert-butylaminoethyl acrylate.

[0016] Preferably, the aminoacrylate monomer is dimethylaminoethyl acrylate.

[0017] In some embodiments, the photoacid generator is an iodonium salt and / or a sulfonium salt.

[0018] Preferably, the photoacid generator is diphenyliodonium hexafluorophosphate.

[0019] In some embodiments, the thickener is one or more of sodium polyacrylate, hydroxyethyl cellulose, carboxymethyl cellulose, and aqueous polyurethane.

[0020] Preferably, the thickener is carboxymethyl cellulose.

[0021] In some embodiments, the preparation method of the modified ammonium perfluoropolyether carboxylate comprises the following steps:

[0022] A1. Add polyethylene glycol to perfluoropolyether carboxylic acid, add a catalyst, react at 70 - 80 °C for 1 - 2 h, add terephthalic acid and react for 1 - 2 h to obtain a compound;

[0023] A2. Add triethylamine to the compound obtained in step A1, raise the temperature to 30 - 40 °C and react for 1 - 2 h, and dry to obtain the modified ammonium perfluoropolyether carboxylate.

[0024] Ammonium perfluoropolyether carboxylate is an ionic fluorosurfactant. When it is used in the photoresist system of the present application, its perfluoropolyether chain segment can have good compatibility with the fluorine side chains on octafluoropentyl methacrylate, thereby enabling octafluoropentyl methacrylate to have good dispersibility in water. However, the perfluoropolyether chain segment has highly fluorinated and low surface energy characteristics, while polyacrylate has relatively high surface energy and polarity. This difference in chemical structure leads to significant differences in the intermolecular interaction forces between the two. The perfluoropolyether chain segment tends to aggregate by itself and is difficult to be uniformly mixed with the polyacrylate chain segment. To address the above problems, in the present application, a polyethylene glycol chain segment is introduced into the perfluoropolyether carboxylic acid chain segment, then it is reacted with terephthalic acid to obtain a compound, and then it is reacted with triethylamine to synthesize a modified ammonium perfluoropolyether carboxylate containing a polyether chain segment and a benzene ring group. Adding it to the aqueous liquid photosensitive photoresist can further improve the corrosion resistance and resolution of the photoresist. This may be because: on the one hand, the introduction of the polyether chain segment can further improve the hydrophilicity of ammonium perfluoropolyether carboxylate; on the other hand, its polyether chain segment can generate stronger hydrogen bond interactions with polyacrylate, aminoacrylate monomer, and ethoxylated trimethylolpropane triacrylate, and the benzene ring chain segment on the modified ammonium perfluoropolyether carboxylate can generate π-π interactions with polyacrylate acrylic acid and monomers containing double bonds, which is beneficial to promoting the dispersion of various substances in deionized water, thereby facilitating the introduction of fluorine side chains and amino groups on the monomer composition into the polyacrylate main chain, and can promote the dispersion of ethoxylated trimethylolpropane triacrylate to make the crosslinked structure more easily formed, which is beneficial to improving the etching resistance and resolution of the photoresist. Secondly, after the photoresist is cured, the perfluoropolyether chain segment and some polyester groups are also beneficial to improving the etching resistance of the photoresist.

[0025] In some embodiments, the mass ratio of the polyethylene glycol to the perfluoropolyether carboxylic acid is 1:(0.5 - 0.8).

[0026] In some embodiments, the mass ratio of the polyethylene glycol to the terephthalic acid is 1:(0.2 - 0.5).

[0027] By limiting the ratio of polyethylene glycol to perfluoropolyether carboxylic acid and the ratio to terephthalic acid, the photoresist of the present application can have better etching resistance and resolution. This may be because under this ratio, the modified ammonium perfluoropolyether carboxylate can have the best dispersibility.

[0028] In some embodiments, the mass ratio of the compound described in step A2 to triethylamine is 1:(0.1 - 0.4).

[0029] In some embodiments, the anti - cratering agent is a polyether silicone anti - cratering agent.

[0030] On the other hand, the present invention provides a method for preparing an aqueous liquid photosensitive photoresist, comprising the following steps:

[0031] S1. Add an acrylic resin emulsion, a photoacid generator, a thickener, a modified ammonium perfluoropolyether carboxylate, and an anti - cratering agent to deionized water, and stir at room temperature for 20 - 30 min to obtain a premix;

[0032] S2. Add a monomer composition and ethoxylated trimethylolpropane triacrylate to the premix obtained in step S1, and stir at room temperature for 30 - 60 min to obtain an aqueous liquid photosensitive photoresist.

[0033] Compared with the prior art, the present invention has the following beneficial effects:

[0034] (1) The aqueous liquid photosensitive photoresist obtained by mixing an acrylic resin, a monomer composition, ethoxylated trimethylolpropane triacrylate, a photoacid generator, a thickener, a modified ammonium perfluoropolyether carboxylate, an anti - cratering agent, and deionized water has excellent etching resistance and high resolution, and the preparation method is simple.

[0035] (2) By adding a monomer composition to the photoresist, the cured acrylic resin chain segments can contain fluorine branches and amino functional groups. The introduction of fluorine branches can improve the etching resistance of the acrylate resin, and the fluorine branches can effectively inhibit the migration of photoacids, thereby reducing defects after development and further improving the resolution of the photoresist. The amino group can form chemical bonds with hydroxyl groups or other active groups on the substrate surface, thereby significantly improving the adhesion of the photoresist to the substrate and keeping the photoresist stable during the etching and cleaning processes. And in this application, by first co - mixing octafluoropentyl methacrylate and amino - acrylic monomers into a monomer composition and then copolymerizing with the acrylate resin, the adhesion of the fluorine - containing acrylate resin chain segments to the substrate can be further improved, which is beneficial to improving its etching resistance and resolution.

[0036] (3) In the present invention, a polyethylene glycol segment is introduced into a perfluoropolyether carboxylic acid segment, and then it is reacted with terephthalic acid to obtain a compound, which is further reacted with triethylamine to synthesize an ammonium modified perfluoropolyether carboxylic acid containing a polyether segment and a benzene ring group. Adding it to an aqueous liquid photosensitive lithographic resin can further improve the corrosion resistance and resolution of the lithographic resin. Detailed implementation manners

[0037] The present invention will be described below in conjunction with specific implementation manners. It should be noted that the following examples are examples of the present invention, only used to illustrate the present invention, and not used to limit the present invention. Other combinations and various improvements within the concept of the present invention can be made without departing from the main idea or scope of the present invention.

[0038] In the following examples and comparative examples, except for the monomer composition, the other compounds and related reagents used can be purchased from the market. Among them, the acid value of the acrylic resin emulsion is 80 mg KOH / g; the number average molecular weights of the perfluoropolyether carboxylic acid and polyethylene glycol are both 1000; the number average molecular weight of the ammonium perfluoropolyether carboxylic acid is 3000 - 6000, purchased from Wuhan Jiangxin Biotechnology Co., Ltd.; the model of the carboxymethyl cellulose is CLHG - 005, purchased from Langfang Changlin Cellulose Co., Ltd.; the model of the polyether silicone anti - cratering agent is Wet270, purchased from Yinhuang (Shanghai) Industrial Co., Ltd.

[0039] Preparation Example 1

[0040] A preparation method of monomer composition - 1, comprising the following steps: Add 10 g of octafluoropentyl methacrylate to 5.5 g of dimethylaminoethyl acrylate and stir at 35 °C for 2 h to obtain monomer composition - 1.

[0041] Preparation Example 2

[0042] A preparation method of monomer composition - 2, the specific implementation manner is the same as that of Preparation Example 1, the difference is that the addition amount of dimethylaminoethyl acrylate is 3 g.

[0043] Preparation Example 3

[0044] A preparation method of ammonium modified perfluoropolyether carboxylic acid - 1, comprising the following steps:

[0045] A1. Add 10 g of polyethylene glycol to 6.5 g of perfluoropolyether carboxylic acid, add 0.1 g of 98 wt% sulfuric acid, react at 75 °C for 1.5 h, and then add 3.5 g of terephthalic acid and react for 1.5 h to obtain a compound;

[0046] A2. Add 2.5 g of triethylamine to 10 g of the compound obtained in step A1, raise the temperature to 35 °C and react for 1.5 h, and then dry to obtain ammonium modified perfluoropolyether carboxylic acid - 1.

[0047] Preparation Example 4

[0048] Method for preparing ammonium modified perfluoropolyether carboxylate - 2. The specific implementation method is the same as that of Preparation Example 3, except that the addition amount of perfluoropolyether carboxylic acid is 10 g.

[0049] Preparation Example 5

[0050] Method for preparing ammonium modified perfluoropolyether carboxylate - 3. The specific implementation method is the same as that of Preparation Example 3, except that the addition amount of terephthalic acid is 1 g.

[0051] Example 1

[0052] An aqueous liquid photosensitive lithographic resist, by weight, comprises the following raw materials: 60 parts of acrylic resin emulsion, 3 parts of monomer composition - 1, 10 parts of ethoxylated trimethylolpropane triacrylate, 4 parts of diphenyliodonium hexafluorophosphate, 1 part of carboxymethyl cellulose, 2 parts of ammonium modified perfluoropolyether carboxylate - 1, 0.3 part of polyether silicone anti - cratering agent, and 22 parts of deionized water.

[0053] The preparation method of the aqueous liquid photosensitive lithographic resist in this example comprises the following steps:

[0054] S1. Add the acrylic resin emulsion, diphenyliodonium hexafluorophosphate, carboxymethyl cellulose, ammonium modified perfluoropolyether carboxylate - 1, and polyether silicone anti - cratering agent into deionized water, and stir at room temperature for 25 min to obtain a premix;

[0055] S2. Add the monomer composition - 1 and ethoxylated trimethylolpropane triacrylate into the premix obtained in step S1, and stir at room temperature for 45 min to obtain the aqueous liquid photosensitive lithographic resist.

[0056] Example 2

[0057] An aqueous liquid photosensitive lithographic resist, by weight, comprises the following raw materials: 50 parts of acrylic resin emulsion, 2 parts of monomer composition - 1, 8 parts of ethoxylated trimethylolpropane triacrylate, 3 parts of diphenyliodonium hexafluorophosphate, 0.5 part of carboxymethyl cellulose, 1 part of ammonium modified perfluoropolyether carboxylate - 1, 0.2 part of polyether silicone anti - cratering agent, and 20 parts of deionized water.

[0058] The preparation method of the aqueous liquid photosensitive lithographic resist in this example comprises the following steps:

[0059] S1. Add the acrylic resin emulsion, diphenyliodonium hexafluorophosphate, carboxymethyl cellulose, ammonium modified perfluoropolyether carboxylate - 1, and polyether silicone anti - cratering agent into deionized water, and stir at room temperature for 20 min to obtain a premix;

[0060] S2. Add the monomer composition - 1 and ethoxylated trimethylolpropane triacrylate to the premix obtained in step S1, and stir at room temperature for 30 min to obtain an aqueous liquid photosensitive lithographic resist.

[0061] Example 3

[0062] An aqueous liquid photosensitive lithographic resist, in parts by weight, comprises the following raw materials: 70 parts of acrylic resin emulsion, 5 parts of monomer composition - 1, 12 parts of ethoxylated trimethylolpropane triacrylate, 6 parts of diphenyliodonium hexafluorophosphate, 1.5 parts of carboxymethyl cellulose, 3 parts of modified perfluoropolyether carboxylate ammonium - 1, 0.4 part of polyether silicone defoamer, and 24 parts of deionized water.

[0063] The preparation method of the aqueous liquid photosensitive lithographic resist in this example comprises the following steps:

[0064] S1. Add the acrylic resin emulsion, diphenyliodonium hexafluorophosphate, carboxymethyl cellulose, modified perfluoropolyether carboxylate ammonium - 1, and polyether silicone defoamer to deionized water, and stir at room temperature for 30 min to obtain a premix;

[0065] S2. Add the monomer composition - 1 and ethoxylated trimethylolpropane triacrylate to the premix obtained in step S1, and stir at room temperature for 60 min to obtain an aqueous liquid photosensitive lithographic resist.

[0066] Example 4

[0067] An aqueous liquid photosensitive lithographic resist and its preparation method, the specific implementation manner is the same as that of Example 1, the difference is that the monomer composition - 1 is equally replaced by the monomer composition - 2.

[0068] Example 5

[0069] An aqueous liquid photosensitive lithographic resist and its preparation method, the specific implementation manner is the same as that of Example 1, the difference is that the modified perfluoropolyether carboxylate ammonium - 1 is equally replaced by the modified perfluoropolyether carboxylate ammonium - 2.

[0070] Example 6

[0071] An aqueous liquid photosensitive lithographic resist and its preparation method, the specific implementation manner is the same as that of Example 1, the difference is that the modified perfluoropolyether carboxylate ammonium - 1 is equally replaced by the modified perfluoropolyether carboxylate ammonium - 3.

[0072] Comparative Example 1

[0073] An aqueous liquid photosensitive lithographic resist and its preparation method, the specific implementation manner is the same as that of Example 1, the difference is that the monomer composition - 1 is equally replaced by dimethylaminoethyl acrylate.

[0074] Comparative Example 2

[0075] An aqueous liquid photosensitive lithography resist and its preparation method. The specific implementation method is the same as that of Example 1, except that ammonium perfluoropolyether carboxylate - 1 is replaced with ammonium perfluoropolyether carboxylate in equal amounts.

[0076] Performance Test

[0077] The aqueous liquid photosensitive lithography resists obtained in the above examples and comparative examples were spin-coated on the treated silicon wafers and pre-baked on a hot plate at 100 °C for 90 s; the spin-coating speed was adjusted so that the thickness of the dried photoresist film was 2.5 μm. Through the mask, it was exposed under i-line ultraviolet light at a light intensity of 100 mJ / cm 2 for 120 s, developed by soaking in an aqueous solution of 2.38 wt% tetramethylammonium hydroxide for 60 s, then washed with deionized water, and baked at 120 °C for 120 s to complete lithography to obtain silicon wafers with respective lithography patterns.

[0078] (1) Etching resistance: The silicon wafers with respective lithography patterns were separately placed in a 95 wt% sulfuric acid aqueous solution at 55 °C with a concentration of 120 mL / L, a copper sulfate aqueous solution at 40 g / L, and a sodium hydroxide aqueous solution at 4 wt%. The longest time for the lithography patterns on the silicon wafers with respective lithography patterns to maintain graphic integrity was recorded as the etching resistance time 1, the etching resistance time 2, and the etching resistance time 3, respectively.

[0079] (2) Resolution: The line resolution status of the silicon wafers with respective lithography patterns was observed using an optical microscope to evaluate the resolution. The smaller the resolution value, the higher the resolution.

[0080] The test results are shown in Table 1:

[0081] Table 1

[0082]

[0083] It can be seen from the data in Table 1 that the aqueous liquid photosensitive lithography resists of Examples 1 - 3 have excellent etching resistance and relatively low resolution values, that is, relatively high resolution. From the comparison between Example 4 and Example 1, it can be seen that changing the ratio of octafluoropentyl methacrylate and amino acrylic acid monomer will reduce the adhesion of the photoresist to the substrate, thereby leading to poor etching resistance and resolution of the photoresist; from the comparison between Examples 5, 6 and Example 1, it can be seen that changing the ratio of polyethylene glycol and perfluoropolyether carboxylic acid or polyethylene glycol and terephthalic acid will deteriorate the dispersibility of ammonium perfluoropolyether carboxylate, and then make it difficult for each monomer to disperse, resulting in poor etching resistance and resolution of the photoresist; from the comparison between Comparative Example 1 and Example 1, it can be seen that the resolution and etching resistance of the photoresist decrease when octafluoropentyl methacrylate is not added; from the comparison between Comparative Example 2 and Example 1, it can be seen that the etching resistance and resolution of the photoresist are poor when ammonium perfluoropolyether carboxylate is directly used.

[0084] The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose is to enable those who are familiar with this technology to understand the content of the present invention and implement it. However, the protection scope of the present invention cannot be limited thereby. Any equivalent changes or modifications made according to the spirit and essence of the present invention should be covered within the protection scope of the present invention.

Claims

1. An aqueous liquid photosensitive photoresist, characterized in that: The invention comprises the following raw materials in parts by weight: 50-70 parts of acrylic resin emulsion, 2-5 parts of monomer composition, 8-12 parts of ethoxylated trimethylolpropane triacrylate, 3-6 parts of photoacid generator, 0.5-1.5 parts of thickener, 1-3 parts of modified perfluoropolyether carboxylic acid ammonium, 0.2-0.4 parts of anti-cratering agent and 20-24 parts of deionized water.

2. The aqueous liquid photosensitive photoresist according to claim 1, characterized in that: The acid value of the acrylic resin emulsion is 80-100 mgKOH / g.

3. The aqueous liquid photosensitive photoresist according to claim 1, characterized in that: The preparation method of the monomer composition is as follows: adding octafluoropentyl methacrylate into aminoacrylic acid monomer and stirring at 30-40° C. for 1-3 hours to obtain the monomer composition.

4. The aqueous liquid photosensitive photoresist according to claim 3, characterized in that: The mass ratio of the octafluoropentyl methacrylate to the aminoacrylic acid monomer is 1:(0.4-0.7).

5. The aqueous liquid photosensitive photoresist according to claim 3, characterized in that: The aminoacrylic acid monomer is one or more of dimethylaminoethyl methacrylate, dimethylaminoethyl acrylate, diethylaminoethyl methacrylate, diethylaminoethyl acrylate, tert-butylaminoethyl methacrylate, and tert-butylaminoethyl acrylate.

6. The aqueous liquid photosensitive photoresist according to claim 1, characterized in that: The photoacid generator is an iodonium salt and / or a sulfonium salt.

7. The aqueous liquid photosensitive photoresist according to claim 1, characterized in that: The preparation method of the modified perfluoropolyether ammonium carboxylate comprises the following steps: A1. Add polyethylene glycol to perfluoropolyether carboxylic acid, add a catalyst, react at 70-80° C. for 1-2 hours, add terephthalic acid and react for 1-2 hours to obtain a compound; A2. Add triethylamine to the compound obtained in step A1, heat to 30-40° C., react for 1-2 hours, and dry to obtain modified perfluoropolyether carboxylate ammonium.

8. The aqueous liquid photosensitive photoresist according to claim 7, characterized in that: The mass ratio of the polyethylene glycol to the perfluoropolyether carboxylic acid is 1:(0.5-0.8).

9. The aqueous liquid photosensitive photoresist according to claim 7, characterized in that: The mass ratio of the polyethylene glycol to terephthalic acid is 1:(0.2-0.5).

10. A method for preparing the aqueous liquid photosensitive photoresist according to any one of claims 1 to 9, characterized in that: The following steps are involved: S1, adding acrylic resin emulsion, photoacid generator, thickener, modified perfluoropolyether carboxylic acid ammonium, and anti-cratering agent into deionized water, stirring at room temperature for 20-30 minutes to obtain a premix; S2. Add the monomer composition and ethoxylated trimethylolpropane triacrylate to the premix obtained in step S1, and stir at room temperature for 30-60 minutes to obtain an aqueous liquid photosensitive photoresist.

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