Ferroelectric capacitor modeling method and device

Abstract

The invention relates to a ferroelectric capacitor modeling method and device, and the method comprises the steps: determining a resistance item according to a damping constant, the thickness of a ferroelectric film, and the area of a ferroelectric capacitor; determining a capacitance item according to the area of the ferroelectric capacitor; determining a controlled voltage source item according to the thickness of the ferroelectric film, the capacitor voltage, the first Landau coefficient and the second Landau coefficient; and according to the resistance item, the capacitance item and the controlled voltage source item, establishing a ferroelectric capacitor model for simulating a real ferroelectric capacitor in the circuit design. The ferroelectric capacitor model established in this way is clear in physical significance, and can accurately simulate the electrical performance characteristics and frequency response characteristics of the ferroelectric capacitor in an actual process. Moreover, the ferroelectric capacitor model can be built by using basic electronic components, the modeling process is simple, convenient and rapid, the simulation operation speed is high, and the ferroelectric capacitor model can be realized through various simulation tools and is integrated into a circuit.

Description

Technical Field

[0001] The present disclosure relates to the field of integrated circuit technologies, and in particular, to a ferroelectric capacitor modeling method and apparatus. Background Art

[0002] Memories and circuits based on ferroelectric materials have received extensive attention. However, few current circuit design software can accurately model and simulate ferroelectric capacitors. Therefore, it is crucial to establish a fast and accurate ferroelectric capacitor model for circuit design simulation. Summary of the Invention

[0003] In view of this, the present disclosure provides a ferroelectric capacitor modeling method and apparatus.

[0004] According to one aspect of the present disclosure, there is provided a ferroelectric capacitor modeling method, including: determining a resistance term according to a damping constant, a ferroelectric film thickness, and an area of the ferroelectric capacitor; determining a capacitance term according to the area of the ferroelectric capacitor; determining a controlled voltage source term according to the ferroelectric film thickness, a capacitance voltage, a first Landau coefficient, and a second Landau coefficient; and establishing the ferroelectric capacitor model according to the resistance term, the capacitance term, and the controlled voltage source term, where the ferroelectric capacitor model is used to simulate the ferroelectric capacitor in circuit design.

[0005] In a possible implementation, establishing the ferroelectric capacitor model according to the resistance term, the capacitance term, and the controlled voltage source term includes: establishing the ferroelectric capacitor model according to the resistance term, the capacitance term, the controlled voltage source term, and a bias voltage source term.

[0006] In a possible implementation, the method further includes: paralleling at least two ferroelectric capacitor models to simulate a multi-domain ferroelectric capacitor.

[0007] In a possible implementation, paralleling at least two ferroelectric capacitor models to simulate a multi-domain ferroelectric capacitor includes: paralleling a linear capacitor and at least two ferroelectric capacitor models to simulate a multi-domain ferroelectric capacitor.

[0008] In a possible implementation, the number of paralleled ferroelectric capacitor models is the same as the number of domains of the multi-domain ferroelectric capacitor.

[0009] In a possible implementation, the damping constant is used to adjust the frequency response of the ferroelectric capacitor model.

[0010] According to another aspect of the present disclosure, there is provided a ferroelectric capacitor simulation model system constructed by using the method as described above, where the ferroelectric capacitor simulation model system is composed of a resistance simulation model, a capacitance simulation model, and a controlled voltage source simulation model connected in series.

[0011] According to another aspect of the present disclosure, there is provided a ferroelectric capacitor modeling device, including: a first determination module for determining a resistance term according to a damping constant, a ferroelectric thin film thickness, and an area of the ferroelectric capacitor; a second determination module for determining a capacitance term according to the area of the ferroelectric capacitor; a third determination module for determining a controlled voltage source term according to the ferroelectric thin film thickness, a capacitance voltage, a first Landau coefficient, and a second Landau coefficient; and a building module for building the ferroelectric capacitor model according to the resistance term, the capacitance term, and the controlled voltage source term.

[0012] In a possible implementation manner, the building module is configured to: build the ferroelectric capacitor model according to the resistance term, the capacitance term, the controlled voltage source term, and a deviation voltage source term.

[0013] In a possible implementation manner, the device is further configured to: connect at least two ferroelectric capacitor models in parallel to simulate a multi-domain ferroelectric capacitor.

[0014] In a possible implementation manner, connecting at least two ferroelectric capacitor models in parallel to simulate a multi-domain ferroelectric capacitor includes: connecting a linear capacitor and at least two ferroelectric capacitor models in parallel to simulate a multi-domain ferroelectric capacitor.

[0015] In a possible implementation manner, the number of the parallel-connected ferroelectric capacitor models is the same as the number of domains of the multi-domain ferroelectric capacitor.

[0016] In a possible implementation manner, the damping constant is used to adjust the frequency response of the ferroelectric capacitor model.

[0017] According to another aspect of the present disclosure, there is provided an electronic device, including: a processor; and a memory for storing processor-executable instructions; wherein, the processor is configured to implement the above method when executing the instructions stored in the memory.

[0018] According to another aspect of the present disclosure, there is provided a non-volatile computer-readable storage medium, on which computer program instructions are stored, wherein, the computer program instructions implement the above method when executed by a processor.

[0019] According to another aspect of the present disclosure, there is provided a computer program product, including computer-readable code, or a non-volatile computer-readable storage medium carrying the computer-readable code, when the computer-readable code runs in a processor of an electronic device, the processor in the electronic device executes the above method.

[0020] The ferroelectric capacitor modeling method provided by the embodiments of the present disclosure can establish a ferroelectric capacitor model based on a resistance term determined by a damping constant, a ferroelectric film thickness, and a ferroelectric capacitor area, a capacitance term determined by the ferroelectric capacitor area, and a controlled voltage source term determined by the ferroelectric film thickness, a capacitor voltage, a first Landau coefficient, and a second Landau coefficient. The physical meaning of the ferroelectric capacitor model is clear, and it can accurately simulate the electrical performance characteristics and frequency response characteristics of the ferroelectric capacitor under actual processes. Moreover, the ferroelectric capacitor model can be built using basic electronic components (such as capacitors, resistors, and controlled voltage sources), and its modeling process is simple and fast, and the simulation running speed is fast.

[0021] Other features and aspects of the present disclosure will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 The flowchart showing the ferroelectric capacitor modeling method according to the embodiments of the present disclosure.

[0023] Figure 2 The schematic diagram showing a ferroelectric capacitor modeling method according to the embodiments of the present disclosure.

[0024] Figure 3 The schematic diagram showing another ferroelectric capacitor modeling method according to the embodiments of the present disclosure.

[0025] Figure 4 The schematic diagram showing another ferroelectric capacitor modeling method according to the embodiments of the present disclosure.

[0026] Figure 5 The schematic diagram showing another ferroelectric capacitor modeling method according to the embodiments of the present disclosure.

[0027] Figure 6 The schematic diagram showing the effect of the ferroelectric capacitor modeling method according to the embodiments of the present disclosure.

[0028] Figure 7 The block diagram showing the ferroelectric capacitor modeling device according to the embodiments of the present disclosure.

[0029] Figure 8 The block diagram showing the electronic device according to the embodiments of the present disclosure. DETAILED DESCRIPTION

[0030] Various exemplary embodiments, features, and aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. The same reference numerals in the drawings denote elements having the same or similar functions. Although various aspects of the embodiments are shown in the drawings, the drawings are not necessarily drawn to scale unless otherwise specified.

[0031] As used herein, the term "exemplary" means "serving as an example, embodiment, or illustration". Any embodiment described as "exemplary" herein need not be construed as superior or better than other embodiments.

[0032] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present disclosure, "a plurality" means two or more unless otherwise specifically defined.

[0033] In the present disclosure, unless otherwise clearly specified and defined, terms such as "mounted", "connected", "coupled", "fixed", etc. shall be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0034] As used herein, the term "and / or" is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the term "at least one" as used herein means any one of a plurality or any combination of at least two of a plurality. For example, including at least one of A, B, and C may represent including any one or more elements selected from the set composed of A, B, and C.

[0035] To better illustrate the present disclosure, numerous specific details are given in the following detailed description. Those skilled in the art should understand that the present disclosure can be implemented without some of these specific details. In some instances, methods, means, elements, and circuits well known to those skilled in the art are not described in detail so as to highlight the gist of the present disclosure.

[0036] To ensure the accuracy of circuit design, a model of a semiconductor device is established and simulated before circuit design to obtain semiconductor device parameters in various situations. In the related art, the method of establishing a model may first measure data and obtain an expression that can cover the data as the model expression on the basis of the data, and the model expression is not given actual physical meaning during the modeling process.

[0037] In related technologies, ferroelectric capacitor models used for simulation, such as the hyperbolic sine function model, lack actual physical meaning, making their simulated physical properties inaccurate. For example, the frequency characteristics of ferroelectric capacitors cannot be achieved and can only be realized by using additional means.

[0038] Moreover, the ferroelectric capacitor models in related technologies are not constructed from basic component circuits but are implemented through complex mathematical calculations, resulting in slower simulation speeds. Further, the ferroelectric capacitor models in related technologies can only be used to simulate relatively large ferroelectric devices and cannot be used for scaled-down devices in advanced processes. For example, they cannot simulate the conductance mutation (or threshold voltage mutation) caused by single-domain flipping in ferroelectric capacitors.

[0039] In view of this, embodiments of the present disclosure provide a ferroelectric capacitor modeling method. A ferroelectric capacitor model can be established based on a resistance term determined by a damping constant, a ferroelectric film thickness, and a ferroelectric capacitor area, a capacitance term determined by the ferroelectric capacitor area, and a controlled voltage source term determined by the ferroelectric film thickness, a capacitor voltage, a first Landau coefficient, and a second Landau coefficient. This ferroelectric capacitor model has clear physical meaning and can accurately simulate the electrical performance characteristics and frequency response characteristics of ferroelectric capacitors under actual processes. Moreover, this ferroelectric capacitor model can be built using basic electronic components (such as capacitors, resistors, and controlled voltage sources), and its modeling process is simple and fast, with a fast simulation running speed.

[0040] Figure 1 The flowchart showing the ferroelectric capacitor modeling method according to an embodiment of the present disclosure is as follows. As Figure 1 shown, this ferroelectric capacitor modeling method includes:

[0041] In step S11, a resistance term is determined according to a damping constant, a ferroelectric film thickness, and the area of the ferroelectric capacitor;

[0042] In step S12, a capacitance term is determined according to the area of the ferroelectric capacitor;

[0043] In step S13, a controlled voltage source term is determined according to the ferroelectric film thickness, a capacitor voltage, a first Landau coefficient, and a second Landau coefficient;

[0044] In step S14, the ferroelectric capacitor model is established according to the resistance term, the capacitance term, and the controlled voltage source term. The ferroelectric capacitor model is used to simulate ferroelectric capacitors in circuit design.

[0045] In a possible implementation, the working mechanism of the ferroelectric capacitor model can be illustrated using a model based on the Landau-Khalatnikov (LK) equation. The P-VFE curve of the ferroelectric thin film (for example, the curve of the polarization intensity P of the ferroelectric thin film varying with the voltage VFE of the ferroelectric thin film) can be described using the hydrodynamic LK equation, that is:

[0046]

[0047] In Equation (1), τ represents the kinetic damping constant during the ferroelectric polarization reversal process. The damping constant τ is used to adjust the frequency response of the ferroelectric capacitor model. The larger the value of the damping constant τ, the faster the response speed of the ferroelectric capacitor model to the voltage change across the capacitor. The smaller the value of the damping constant τ, the slower the response speed of the ferroelectric capacitor model to the voltage change across the capacitor. d FE represents the thickness of the ferroelectric thin film, α is the first Landau coefficient, β is the second Landau coefficient, P is the polarization intensity of the ferroelectric thin film, t represents time, d represents the differential symbol, V FE is the voltage across the ferroelectric thin film.

[0048] Equation (1) can be rewritten in the following form:

[0049]

[0050] In Equation (2), τ represents the kinetic damping constant during the ferroelectric polarization reversal process, d FE represents the thickness of the ferroelectric thin film, α is the first Landau coefficient, β is the second Landau coefficient, P is the polarization intensity of the ferroelectric thin film, t represents time, d represents the differential symbol, V FE is the voltage across the ferroelectric thin film.

[0051] Furthermore, the second term αd FE P in Equation (2) can be split into P+(αd FE -1)P. At the same time, considering Q p =A FE P, where Q P is the charge quantity of the ferroelectric capacitor, A FE is the area of the ferroelectric capacitor, and P is the polarization intensity of the ferroelectric thin film. In this way, Equation (2) can be transformed into:

[0052]

[0053] In Equation (3), V FE represents the voltage across the ferroelectric thin film, τ represents the kinetic damping constant during the ferroelectric polarization reversal process, d FE represents the thickness of the ferroelectric thin film, A FE represents the area of the ferroelectric capacitor, Q Pq represents the charge amount of the ferroelectric capacitor, t represents time, d represents the differential symbol, α is the first Landau coefficient, and β is the second Landau coefficient.

[0054] Figure 2 FIG. shows a schematic diagram of a ferroelectric capacitor modeling method according to an embodiment of the present disclosure. Below, in conjunction with Figure 2 and Formula (3), an exemplary description of the ferroelectric capacitor modeling method according to the embodiment of the present disclosure will be given.

[0055] In step S11, according to the damping constant τ, the ferroelectric film thickness d FE , and the area A of the ferroelectric capacitor FE , the first term on the right side of Formula (3) is taken as the resistance term. Among them, as Figure 2 shown, according to Ohm's law, that is, voltage is equal to current multiplied by resistance. Since represents the instantaneous current flowing through the resistor res at a certain moment, the resistance value of the resistor res in the resistance term can be determined as

[0056] In step S12, according to the area A of the ferroelectric capacitor FE , the second term on the right side of Formula (3) is taken as the capacitance term. Among them, as Figure 2 shown, since the ratio of the capacitance charge to the capacitor is equal to the capacitor voltage, the capacitance value of the capacitor cap in the capacitance term can be determined as A FE .

[0057] In step S13, according to the ferroelectric film thickness d FE , the capacitor voltage , the first Landau coefficient α, and the second Landau coefficient β, the third and fourth terms on the right side of Formula (3) are taken as the controlled voltage source term. Among them, as Figure 2 shown, the controlled voltage source sou is controlled by the voltage of the capacitor cap, and the capacitor voltage itself is its The magnitude of the controlled voltage source sou can be expressed as

[0058] It should be understood that the embodiment of the present disclosure does not limit the execution order of steps S11 to S13. Steps S11 to S13 can be executed simultaneously, or any one of steps S11 to S13 can be executed first, and can be flexibly set according to the actual application scenario.

[0059] In steps S11 to S13, the resistance term and the capacitance term and the controlled voltage source term In step S14, based on the resistance term the determined resistance res, based on the capacitance term the determined capacitance cap, and based on the controlled voltage source term the determined controlled voltage source sou can be connected in series to establish a ferroelectric capacitor model as shown in Figure 2 where V FE represents the voltage across the ferroelectric thin film.

[0060] It should be noted that although the ferroelectric capacitor modeling method is introduced above by taking formulas (3) and Figure 2 as examples, those skilled in the art can understand that the present disclosure should not be limited thereto. In fact, users can appropriately modify formulas (3) and Figure 2 completely according to personal preferences and / or actual application scenarios.

[0061] In this way, the established ferroelectric capacitor model has a clear physical meaning and can accurately simulate the electrical performance characteristics and frequency response characteristics of the ferroelectric capacitor under actual processes. Moreover, the ferroelectric capacitor model can be built using basic electronic components (such as capacitors, resistors, and controlled voltage sources), and its modeling process is simple and fast, with a fast simulation running speed. The ferroelectric capacitor model can be implemented through various simulation tools (such as a simulation circuit simulator) and integrated into the circuit.

[0062] In circuit design, when using components with nonlinearity or process dependence such as ferroelectric capacitors, the influence of the offset voltage needs to be considered. This offset voltage may stem from differences in manufacturing processes, changes in material properties, or the influence of environmental factors (such as temperature). To more accurately simulate the ferroelectric capacitor, an offset voltage source can be added to the ferroelectric capacitor model.

[0063] Figure 3 FIG. shows a schematic diagram of another ferroelectric capacitor modeling method according to an embodiment of the present disclosure. As shown in Figure 3 step S14 may include: based on the resistance term the capacitance term the controlled voltage source term the offset voltage source term V sft to establish the ferroelectric capacitor model.

[0064] In the example, considering the influence of the ferroelectric capacitor process, etc., there may be an offset voltage source in formula (3), and a term of the offset voltage source with a magnitude of V sft can be added to formula (3), that is:

[0065]

[0066] In formula (4), VFE V represents the voltage across the ferroelectric thin film, τ represents the kinetic damping constant during the ferroelectric polarization reversal process, and d FE represents the thickness of the ferroelectric thin film, and A FE represents the area of the ferroelectric capacitor, and Q P represents the electric charge of the ferroelectric capacitor, and V sft represents the voltage value of the bias voltage source, t represents time, d represents the differential symbol, α is the first Landau coefficient, and β is the second Landau coefficient.

[0067] The resistor res determined based on the resistance term can be connected in series with the capacitor cap determined based on the capacitance term , the controlled voltage source sou determined based on the controlled voltage source term , and the bias voltage source sft determined based on the bias voltage source term V sft to establish the ferroelectric capacitor model as shown in Figure 3 Figure.

[0068] By introducing the bias voltage source sft into the ferroelectric capacitor model, the electrical performance characteristics of the ferroelectric capacitor can be more accurately simulated in the simulation, and the deviation caused by process influence can be reduced.

[0069] Since both formula (3) and formula (4) are derived based on the Landau equation, and the Landau equation considers the single-domain ferroelectric characteristics, while in actual processes, ferroelectric materials mostly exist in the form of multi-domains. In order to be more in line with the polycrystalline and multi-domain nature of the ferroelectric material itself (such as the more gentle polarization reversal phenomenon with voltage, and the inner loop property of ferroelectric polarization, etc.), multiple single-domain ferroelectric capacitors can be connected in parallel to conform to the property of multi-domain ferroelectric flipping.

[0070] Figure 4 FIG. shows a schematic diagram of another ferroelectric capacitor modeling method according to an embodiment of the present disclosure, as shown in Figure 4 Figure, the method further includes: connecting at least two ferroelectric capacitor models (for example, 8) in parallel to simulate a multi-domain ferroelectric capacitor. In the example, a multi-domain ferroelectric capacitor refers to a capacitor made of a ferroelectric material, in which there are multiple ferroelectric domains. Among them, a ferroelectric domain refers to a region in a ferroelectric body with the same spontaneous polarization direction. The spontaneous polarization direction within each domain is the same, but the spontaneous polarization directions between different domains may be different. These domains can be flipped under the action of an electric field, resulting in a change in polarization.

[0071] Connecting multiple ferroelectric capacitor models in parallel can simulate the change in the domain structure of a multi-domain ferroelectric capacitor. Each ferroelectric capacitor model represents a domain, and its polarization direction can change independently. Under the action of an electric field, the polarization directions of different domains may change, resulting in a change in the overall polarization. This change can be achieved by adjusting the polarization directions of the individual ferroelectric capacitor models in the parallel model.

[0072] In this way, at least two ferroelectric capacitor models are connected in parallel to simulate a multi-domain ferroelectric capacitor. Among them, by reasonably selecting the number of parallel ferroelectric capacitor models and using the fitting method to adjust the parameters of each ferroelectric capacitor model (such as the first Landau coefficient α and the second Landau coefficient β), a parallel model that meets the requirements can be obtained to simulate the multi-domain ferroelectric capacitor for circuit design and simulation.

[0073] In one possible implementation Figure 5 A schematic diagram showing another ferroelectric capacitor modeling method according to an embodiment of the present disclosure is shown in Figure 5 As shown, a linear capacitor and at least two ferroelectric capacitor models can be connected in parallel to simulate a multi-domain ferroelectric capacitor.

[0074] Because the capacitance value of the ferroelectric capacitor in circuit simulation is the superposition of the capacitance value caused by the ferroelectric polarization reversal and the capacitance value of the ferroelectric capacitor itself as a linear capacitor. The Landau equation only shows the capacitance value caused by the ferroelectric polarization reversal. Therefore, in the case of multiple single-domain ferroelectric capacitors connected in parallel, a linear capacitor can be connected in parallel to better simulate the non-ferroelectric reversal part of the ferroelectric capacitor capacitance value and be more in line with the actual data.

[0075] In one possible implementation, the number of parallel ferroelectric capacitor models is the same as the number of domains of the multi-domain ferroelectric capacitor. For example, assume that a certain multi-domain ferroelectric capacitor has N domains. To construct a corresponding multi-domain ferroelectric capacitor model, N independent ferroelectric capacitor models can be constructed and connected in parallel, and each ferroelectric capacitor model represents one domain in the multi-domain ferroelectric capacitor.

[0076] Since the number of parallel ferroelectric capacitor models is the same as the number of domains of the multi-domain ferroelectric capacitor. This correspondence facilitates simulating and analyzing the behavior and characteristics of the multi-domain ferroelectric capacitor under the action of an electric field through the parallel ferroelectric capacitor models.

[0077] It should be understood that the number of domains of the ferroelectric capacitor model simulated in the embodiments of the present disclosure can be determined by itself. More domains can be used to better simulate the polycrystalline multi-domain characteristics, or fewer domains can be used to simulate the physical characteristics of miniaturized devices under advanced processes. The embodiments of the present disclosure do not limit this.

[0078] Figure 6 A schematic diagram showing the effect of the ferroelectric capacitor modeling method according to an embodiment of the present disclosure is shown in Figure 6 As shown, the vertical axis represents the polarization intensity P of the ferroelectric capacitor, with the unit of μQ / cm 2 , and the horizontal axis represents the voltage V of the ferroelectric capacitor FE , with the unit of V.

[0079] The Landau coefficient values of each single-domain ferroelectric capacitor can be given a preset numerical distribution rule to meet the actual process conditions. Figure 6 It is the polarization intensity of the ferroelectric capacitor measured in the actual process (see the red curve) and the polarization intensity of the ferroelectric capacitor model established in the embodiment of the present disclosure (see the green curve). It can be seen that the ferroelectric capacitor model simulated by the ferroelectric capacitor modeling method in the disclosed embodiment can form a good fit with the experimental data.

[0080] In summary, the ferroelectric capacitor modeling method provided by the embodiment of the present disclosure can establish a ferroelectric capacitor model according to the resistance term determined by the damping constant, the ferroelectric film thickness, and the ferroelectric capacitor area, the capacitance term determined by the ferroelectric capacitor area, and the controlled voltage source term determined by the ferroelectric film thickness, the capacitor voltage, the first Landau coefficient, and the second Landau coefficient. The physical meaning of the ferroelectric capacitor model is clear, and it can accurately simulate the electrical performance characteristics and frequency response characteristics of the ferroelectric capacitor under actual processes. Moreover, the ferroelectric capacitor model can be built using basic electronic components (such as capacitors, resistors, and controlled voltage sources), and its modeling process is simple and fast, and the simulation running speed is fast.

[0081] According to another aspect of the present disclosure, a ferroelectric capacitor simulation model system is provided, which is constructed by the method described above. The ferroelectric capacitor simulation model system is composed of a resistor simulation model, a capacitor simulation model, and a controlled voltage source simulation model connected in series.

[0082] In a possible implementation manner, the ferroelectric capacitor simulation model system further includes a bias voltage source simulation model. The ferroelectric capacitor simulation model system is composed of a resistor simulation model, a capacitor simulation model, a controlled voltage source simulation model, and a bias voltage source simulation model connected in series.

[0083] In a possible implementation manner, the system is further configured to: connect at least two ferroelectric capacitor simulation model systems in parallel to simulate a multi-domain ferroelectric capacitor. For example, N (N≥2) ferroelectric capacitor simulation model systems can be connected in parallel to simulate a ferroelectric capacitor with N domains.

[0084] In a possible implementation manner, connecting at least two ferroelectric capacitor simulation model systems in parallel to simulate a multi-domain ferroelectric capacitor includes: connecting a linear capacitor simulation model and at least two ferroelectric capacitor simulation model systems in parallel to simulate a multi-domain ferroelectric capacitor. For example, a linear capacitor and N (N≥2) ferroelectric capacitor simulation model systems can be connected in parallel to simulate a ferroelectric capacitor with N domains.

[0085] In a possible implementation manner, the number of parallel-connected ferroelectric capacitor simulation model systems is the same as the number of domains of the multi-domain ferroelectric capacitor.

[0086] Figure 7A block diagram showing a ferroelectric capacitor modeling device according to an embodiment of the present disclosure is as follows Figure 7 As shown, the ferroelectric capacitor modeling device includes:

[0087] A first determination module 71 for determining a resistance term according to a damping constant, a ferroelectric film thickness, and an area of the ferroelectric capacitor;

[0088] A second determination module 72 for determining a capacitance term according to the area of the ferroelectric capacitor;

[0089] A third determination module 73 for determining a controlled voltage source term according to the ferroelectric film thickness, a capacitance voltage, a first Landau coefficient, and a second Landau coefficient;

[0090] A building module 74 for building the ferroelectric capacitor model according to the resistance term, the capacitance term, and the controlled voltage source term.

[0091] In a possible implementation manner, the building module 74 is configured to: build the ferroelectric capacitor model according to the resistance term, the capacitance term, the controlled voltage source term, and a deviation voltage source term.

[0092] In a possible implementation manner, the device is further configured to: connect at least two ferroelectric capacitor models in parallel to simulate a multi-domain ferroelectric capacitor.

[0093] In a possible implementation manner, connecting at least two ferroelectric capacitor models in parallel to simulate a multi-domain ferroelectric capacitor includes: connecting a linear capacitor and at least two ferroelectric capacitor models in parallel to simulate a multi-domain ferroelectric capacitor.

[0094] In a possible implementation manner, the number of parallel-connected ferroelectric capacitor models is the same as the number of domains of the multi-domain ferroelectric capacitor.

[0095] In a possible implementation manner, the damping constant is used to adjust the frequency response of the ferroelectric capacitor model.

[0096] In some embodiments, the functions or modules included in the device provided by the embodiments of the present disclosure can be used to execute the methods described in the above method embodiments. The specific implementation can refer to the description of the above method embodiments. For the sake of brevity, it will not be repeated here.

[0097] The embodiments of the present disclosure also propose a computer-readable storage medium, on which computer program instructions are stored. When the computer program instructions are executed by a processor, the above methods are implemented. The computer-readable storage medium can be a volatile or non-volatile computer-readable storage medium.

[0098] Embodiments of the present disclosure also provide a computer program product, including computer-readable code, or a non-volatile computer-readable storage medium carrying the computer-readable code. When the computer-readable code runs in a processor of an electronic device, the processor in the electronic device executes the above method.

[0099] Embodiments of the present disclosure also propose an electronic device, including: a processor; a memory for storing instructions executable by the processor; wherein, the processor is configured to implement the above method when executing the instructions stored in the memory.

[0100] Exemplarily, the electronic device in this embodiment includes, but is not limited to, a desktop computer, a television, a mobile device with a large-size screen such as a mobile phone, a tablet computer, and other common electronic devices that require multiple chip-level cascade connections to achieve driving.

[0101] Exemplarily, the electronic device may also be a user equipment (UE), a mobile device, a user terminal, a terminal, a handheld device, a computing device, or a vehicle-mounted device, etc. Exemplarily, some examples of terminals are: a display, a smart phone or a portable device, a mobile phone, a tablet computer, a laptop computer, a palm computer, a mobile internet device (MID), a wearable device, a virtual reality (VR) device, an augmented reality (AR) device, a wireless terminal in industrial control, a wireless terminal in self-driving, a wireless terminal in remote medical surgery, a wireless terminal in a smart grid, a wireless terminal in transportation safety, a wireless terminal in a smart city, a wireless terminal in a smart home, a wireless terminal in a vehicle-to-everything network, etc. For example, the server may be a local server or a cloud server.

[0102] Figure 8 A block diagram of an electronic device 1900 according to an embodiment of the present disclosure is shown. For example, the electronic device 1900 may be provided as a server or a terminal device. Refer to Figure 8, the electronic device 1900 includes a processing component 1922, which further includes one or more processors, and memory resources represented by a memory 1932 for storing instructions executable by the processing component 1922, such as application programs. The application programs stored in the memory 1932 may include one or more modules each corresponding to a set of instructions. In addition, the processing component 1922 is configured to execute instructions to perform the above method.

[0103] The electronic device 1900 may further include a power component 1926 configured to perform power management of the electronic device 1900, a wired or wireless network interface 1950 configured to connect the electronic device 1900 to a network, and an input / output interface 1958. The electronic device 1900 may operate based on an operating system stored in the memory 1932, such as Windows ServerTM, Mac OS XTM, UnixTM, LinuxTM, FreeBSD TM or the like.

[0104] In an exemplary embodiment, a non-volatile computer-readable storage medium is also provided, such as the memory 1932 including computer program instructions, and the above computer program instructions can be executed by the processing component 1922 of the electronic device 1900 to complete the above method.

[0105] The above is only an exemplary embodiment of the present invention and is not used to limit the protection scope of the present invention. The protection scope of the present invention is determined by the appended claims.

[0106] It should be noted that in this text, the term "including", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements but also includes other elements not explicitly listed, or further includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element.

[0107] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present disclosure. In this regard, each block in the flowchart or block diagram may represent a module, a segment of a program, or a portion of an instruction, which contains one or more executable instructions for implementing the specified logical function. In some alternative implementations, the functions noted in the blocks may occur in a different order than noted in the accompanying drawings. For example, two consecutive blocks may in fact be executed substantially in parallel, or they may sometimes be executed in the reverse order, depending on the functions involved. It should also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can be implemented by a dedicated hardware-based system that performs the specified functions or actions, or by a combination of dedicated hardware and computer instructions.

[0108] The embodiments of the present disclosure have been described above. The above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art in the technical field without departing from the scope and spirit of the described embodiments. The selection of the terms used herein is intended to best explain the principles of the embodiments, the practical application, or the improvement of the technology in the market, or to enable other ordinary skill in the technical field to understand the embodiments disclosed herein.

Claims

1. A ferroelectric capacitor modeling method, characterized in that: include: Determine the resistance term based on the damping constant, the thickness of the ferroelectric film, and the area of ​​the ferroelectric capacitor; Determining a capacitance term according to the area of ​​the ferroelectric capacitor; Determining a controlled voltage source term according to the thickness of the ferroelectric film, the capacitor voltage, the first Landau coefficient, and the second Landau coefficient; A ferroelectric capacitor model is established according to the resistance term, the capacitance term and the controlled voltage source term. The ferroelectric capacitor model is used to simulate the ferroelectric capacitor in circuit design.

2. The method according to claim 1, characterized in that The ferroelectric capacitor model is established according to the resistance term, the capacitance term, and the controlled voltage source term, including: The ferroelectric capacitor model is established according to the resistance term, the capacitance term, the controlled voltage source term, and the deviation voltage source term.

3. The method according to claim 1 or 2, characterized in that: The method further comprises: At least two ferroelectric capacitor models are connected in parallel to simulate multi-domain ferroelectric capacitors.

4. The method according to claim 3, characterized in that: At least two ferroelectric capacitor models are connected in parallel to simulate multi-domain ferroelectric capacitors, including: A linear capacitor and at least two ferroelectric capacitor models are connected in parallel to simulate a multi-domain ferroelectric capacitor.

5. The method according to claim 3, characterized in that: The number of the parallel-connected ferroelectric capacitor models is the same as the number of domains of the multi-domain ferroelectric capacitor.

6. The method according to claim 1, characterized in that The damping constant is used to adjust the frequency response of the ferroelectric capacitor model.

7. A ferroelectric capacitor simulation model system, characterized in that: The ferroelectric capacitor simulation model system is constructed by the method described in any one of claims 1 to 6, wherein the ferroelectric capacitor simulation model system is composed of a resistance simulation model, a capacitance simulation model, and a controlled voltage source simulation model connected in series.

8. A ferroelectric capacitor modeling device, characterized in that: include: A first determination module is used to determine the resistance term according to the damping constant, the thickness of the ferroelectric film, and the area of ​​the ferroelectric capacitor; A second determination module, configured to determine a capacitance item according to an area of ​​the ferroelectric capacitor; A third determination module is used to determine a controlled voltage source term according to the ferroelectric film thickness, capacitor voltage, first Landau coefficient, and second Landau coefficient; A building module is used to build a ferroelectric capacitor model according to the resistance term, the capacitance term, and the controlled voltage source term.

9. An electronic device, characterized in that: include: processor; a memory for storing processor-executable instructions; The processor is configured to implement the method described in any one of claims 1 to 6 when executing the instructions stored in the memory.

10. A non-volatile computer-readable storage medium having computer program instructions stored thereon, characterized in that: When the computer program instructions are executed by a processor, the method according to any one of claims 1 to 6 is implemented.

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