Beam introduction method and apparatus for ion implanter, ion implantation device, and storage medium

Abstract

The application provides a beam guiding method and device of an ion implanter, an ion implantation equipment and a storage medium, relates to the field of general control and regulation systems, and the method comprises the following steps: obtaining target input parameters of a newly-built beam, the target input parameters comprising a target doping ion type, a target beam energy and a target injection flow intensity; searching for historical beam information from a historical database based on the target input parameters, the historical doping ion type in the historical beam information being the same as the target doping ion type; supplementing beam information of the newly-built beam based on the historical beam information and the target input parameters to obtain initial beam information of the newly-built beam; and performing a beam guiding process based on the initial beam information to obtain a working ion beam indicated by the newly-built beam. The method can improve the efficiency of the newly-built beam of the ion implantation equipment.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of general control and regulation systems, and in particular to a beam guiding method and device for an ion implanter, an ion implantation apparatus, and a storage medium. BACKGROUND

[0002] The rapid development of information technology has made the semiconductor industry a core field that affects national strategic security. With the increasing demand for semiconductor chips, the chip processing industry is developing rapidly, and there is a higher requirement for the automation production capacity of related manufacturing equipment.

[0003] As a core equipment in the production process of semiconductor devices, the ion implanter can perform ion doping on the surface of a semiconductor to change its carrier concentration and conductivity type, and has a high requirement for the level of the operator. In the actual production process, the beam adjustment process of a newly created Recipe (process recipe) often takes a lot of time of the relevant professional personnel. Therefore, how to create a Recipe and perform beam adjustment is a problem to be solved to improve the beam guiding efficiency. SUMMARY

[0004] The present application provides a beam guiding method and device for an ion implanter, an ion implantation apparatus, and a storage medium. The technical solution is as follows:

[0005] According to one aspect of the present application, a beam guiding method for an ion implanter is provided, the method comprising:

[0006] obtaining target input parameters of a newly created beam, the target input parameters comprising a target doping ion type, a target beam energy, and a target implantation current;

[0007] finding historical beam information from a historical database based on the target input parameters, the historical doping ion type in the historical beam information being the same as the target doping ion type;

[0008] complementing beam information of the newly created beam based on the historical beam information and the target input parameters to obtain initial beam information of the newly created beam;

[0009] performing a beam guiding process based on the initial beam information to obtain a working ion beam indicated by the newly created beam.

[0010] According to another aspect of the present application, a beam guiding device for an ion implanter is provided, the device comprising:

[0011] a first obtaining module configured to obtain target input parameters of a newly created beam, the target input parameters comprising a target doping ion type, a target beam energy, and a target implantation current;

[0012] The first searching module is configured to search historical beam information from a historical database based on the target input parameter, wherein a historical doping ion type in the historical beam information is the same as the target doping ion type.

[0013] The parameter complementing module is configured to complement beam information of the new beam based on the historical beam information and the target input parameter, to obtain initial beam information of the new beam.

[0014] The control module is configured to perform a beam guiding process based on the initial beam information, to obtain a working ion beam indicated by the new beam.

[0015] According to an aspect of the present application, there is provided an ion implantation device, comprising a processor and a memory storing a program, the program comprising instructions which, when executed by the processor, cause the processor to perform the beam guiding method of the ion implanter.

[0016] According to another aspect of the present application, there is provided a non-transitory computer-readable storage medium storing computer instructions for causing a computer to perform the beam guiding method of the ion implanter.

[0017] According to another aspect of the present application, there is provided a computer program product comprising computer instructions stored in a computer-readable storage medium. A processor of an ion implantation device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions to cause the ion implantation device to perform the beam guiding method of the ion implanter.

[0018] The technical scheme provided by the embodiments of the present application has at least the following beneficial effects:

[0019] The user only needs to input three parameters of the target doping ion type, the target ion energy and the target injection current, and the ion implantation device can automatically complete and generate all initial beam information of the new beam based on the target input parameter and the historical database, and perform a beam guiding process based on the initial beam information, to obtain the required working ion beam. The technical scheme realizes the purpose of automatic beam information completion, reduces the amount of process parameters input by human beings, and does not require a professional to be proficient in all beam information, thereby reducing the operation difficulty of the ion implantation device and improving the efficiency of the new beam of the ion implantation device. BRIEF DESCRIPTION OF DRAWINGS

[0020] In the following description of exemplary embodiments in conjunction with the accompanying drawings, more details, features and advantages of the present application are disclosed, in which:

[0021] Figure 1A flow chart of a beam introduction method of an ion implanter according to an example embodiment of the present application is shown;

[0022] Figure 2 A flow chart of a beam introduction method of an ion implanter according to an example embodiment of the present application is shown;

[0023] Figure 3 A flow chart of a beam introduction method of an ion implanter according to an example embodiment of the present application is shown;

[0024] Figure 4 A flow chart of a beam introduction method of an ion implanter according to an example embodiment of the present application is shown;

[0025] Figure 5 A flow chart of a beam introduction method of an ion implanter according to an example embodiment of the present application is shown;

[0026] Figure 6 A flow chart of a beam introduction method of an ion implanter according to an example embodiment of the present application is shown;

[0027] Figure 7 A flow chart of a beam introduction method of an ion implanter according to an example embodiment of the present application is shown. DETAILED DESCRIPTION

[0028] Embodiments of the present application will be described in more detail by way of examples with reference to the accompanying drawings. Although certain embodiments of the present application will be described, it is understood that the present application can be carried out in various ways, and that the embodiments are presented for purpose of illustration only and explanation only and are not to be taken as limiting the scope of the present application. It is to be understood that the drawings and the embodiments are for illustrative purposes and are not to be taken as limiting the scope of the present application.

[0029] It is to be understood that the various steps of the method embodiments of the present application can be performed in different orders and / or in parallel. Furthermore, the method embodiments can include additional steps and / or omit performing the steps shown. The scope of the present application is not limited in this respect.

[0030] As used herein, the term "includes" and its variants are to be read to be analogous to "comprises," or "comprising." The term "based on" is to be read as "based, at least in part, on." The term "one embodiment" means "at least one embodiment." The term "another embodiment" means "at least one additional embodiment." The term "some embodiments" means "at least some embodiments." Related terms are to be construed accordingly. It is to be noted that the terms "first," "second," and the like used herein do not necessarily denote any order, quantity, or importance, but are used to distinguish one element from another. It is to be noted that the terms "a" and "an" are used herein to refer to "one or more" of something unless the context clearly indicates otherwise. The names of the messages or information exchanged between the plurality of apparatuses in the embodiments of the present application are used only for illustrative purposes, and are not intended to limit the scope of the messages or information.

[0031] The schemes of the present application are described below with reference to the accompanying drawings, and the technical schemes provided by the embodiments of the present application are described in detail through specific embodiments and application scenarios.

[0032] In actual production and manufacturing processes, there are many process parameters corresponding to newly established beam flows, and a large amount of manual debugging and input time of professional personnel is often required, and subsequent manual debugging of various process parameters is also required, which leads to low automation of the beam introduction process, and requires professional personnel to be proficient in the application of various process parameters, which greatly increases the operation difficulty of the ion implantation equipment.

[0033] In view of the problem of low automation of the beam introduction process in the related art, the embodiments of the present application provide a new beam introduction method of an ion implantation machine, which only needs a user to input a small amount of process parameters, and can automatically generate and complete the remaining required beam flow information, thereby improving the automation of the beam introduction process and effectively reducing the operation difficulty of the ion implantation equipment. Figure 1 A flowchart of a beam introduction method of an ion implantation machine according to an exemplary embodiment of the present application is shown. The method is applied to an ion implantation equipment as an example. As shown in Figure 1 The method comprises the following steps.

[0034] In step 101, target input parameters of a newly established beam flow are obtained, and the target input parameters include a target doping ion type, a target beam energy, and a target implantation current.

[0035] Different from the related art that a user needs to input all beam information when creating a new beam, in the embodiment of the present application, only the three most critical parameters, i.e. the doping ion type, the beam energy and the injection current, need to be input by the user, and the rest of the beam information (or process parameters) required for creating the new beam can be automatically generated and completed by the ion implantation equipment based on the three parameters that have been input. In a possible implementation, after the user creates a new beam in the UI interface of the ion implantation equipment and inputs the target doping ion type, the target beam intensity and the target injection current, the ion implantation equipment can obtain the target input parameters of the new beam, which include the target doping ion type, the target beam energy and the target injection current; and then perform the subsequent process to generate and complete the parameters required for the new beam based on the existing target input parameters.

[0036] In step 102, the historical beam information is searched from the historical database based on the target input parameters, and the historical doping ion type in the historical beam information is the same as the target doping ion type.

[0037] The historical database is pre-set in the ion implantation equipment, and the historical beam information of several different types of ion beams is stored in the historical database. The historical database can be configured for the ion implantation equipment before it is shipped. Alternatively, the historical database can be imported from other ion implantation equipment of the same type. Alternatively, the historical beam information of the ion implantation equipment during use can also be stored in the historical database.

[0038] If the historical beam information matching the target input parameters exists in the historical database, the historical ion beam corresponding to the historical beam information is closer to the ion beam corresponding to the new beam, and the historical beam information can be applied to generate and complete the beam information of the new beam. In a possible implementation, the historical beam information matching the target input parameters can be searched from the historical database based on the target input parameters, so as to complete the beam information required for the new beam using the historical beam information.

[0039] Considering that the historical beam information completely matching the target input parameters can not exist in the historical database, in order to ensure the smooth progress of the subsequent process, at least the historical doping ion type in the historical beam information needs to be the same as the target doping ion type of the new beam.

[0040] In step 103, the beam information of the new beam is supplemented based on the historical beam information and the target input parameters, and the initial beam information of the new beam is obtained.

[0041] After the historical beam information is found, the beam information of the new beam can be supplemented according to the historical beam information and the target input parameters, so as to obtain the complete initial beam information of the new beam.

[0042] Exemplarily, the initial beam information can include a doping ion type, a target ion energy, a target injection current, an initial doping gas flow, an extraction voltage, an extraction suppression voltage, a bias current value, an arc voltage value, a source magnetic field current value, a Q1 current value, a Q2 current value, a Q3 current value, a triode X-axis position, a triode Y-axis position, a triode Z-axis position, a filament current value, a mass analyzer current value, a parallel lens current value, an analysis slit default value, a multi-coil array current default value, a multi-pole array pole default position, and the like.

[0043] In step 104, a beam extraction process is performed based on the initial beam information to obtain a working ion beam indicated by the new beam.

[0044] After the initial beam information of the new beam is obtained, the ion implantation equipment can be set according to the initial beam information, and the beam extraction process is performed to obtain the working ion beam indicated by the new beam.

[0045] In summary, the embodiment of the present application provides a beam extraction method of an ion implantation machine. The user only needs to input three parameters of a target doping ion type, a target ion energy and a target injection current, and the ion implantation equipment can automatically complete and generate all initial beam information of the new beam based on the target input parameters and a historical database, and perform a beam extraction process based on the initial beam information to obtain a required working ion beam. The purpose of automatic beam information completion is achieved, the amount of process parameters input by human is reduced, and professional personnel do not need to be skilled in all beam information, thereby reducing the operation difficulty of the ion implantation equipment and improving the efficiency of the new beam of the ion implantation equipment.

[0046] Considering that the historical beam information that is completely the same as the target input parameters can not be found, in order to ensure the subsequent process to be sequentially performed, a specific query rule is followed when the historical database is searched based on the target input parameters.

[0047] Reference is made to Figure 2 , Figure 2 A flowchart of another beam extraction method of an ion implantation machine according to an exemplary embodiment of the present application is shown. The method is applied to an ion implantation equipment as an example. As shown in Figure 2 , the method includes:

[0048] In step 201, target input parameters of a new beam are obtained, and the target input parameters include a target doping ion type, a target beam energy and a target injection current.

[0049] The implementation of step 201 can refer to step 101, and the embodiment is not described here.

[0050] Step 202, based on the target doping ion type in the target input parameter, find the first candidate beam information from the historical database, the historical doping ion type in the first candidate beam information is same as the target doping ion type.

[0051] Considering that there is a certain correlation between the beam information of the same doping ion type, in order to reduce the workload of subsequent parameter adjustment, when finding and matching from the historical database based on the target input parameter, first, based on the target doping ion type in the target input parameter, find the first candidate beam information with the same historical doping ion type from the historical database.

[0052] Step 203, determine the historical beam information based on the first candidate beam information.

[0053] Further, determine the final matched historical beam information from the found first candidate beam information.

[0054] The number of found first candidate beam information is different, and the subsequent executed steps are also different. Corresponding to an exemplary example, step 203 can also include step 203A and step 203B.

[0055] Step 203A, if there are multiple first candidate beam information, based on the target beam energy in the target input parameter, filter out the second candidate beam information from the first candidate beam information, the energy difference between the historical beam energy of the second candidate beam information and the target beam energy is the smallest; determine the historical beam information based on the second candidate beam information.

[0056] If multiple first candidate beam information is found, that is, there are multiple beam information with the same target doping ion type in the historical database, and only a single beam information is needed for beam information completion, it is necessary to further screen the multiple first candidate beam information to filter out the example beam more similar to the newly built beam. Corresponding to one possible implementation, if there are multiple first candidate beam information, the historical beam energy closest to the target beam energy can be further filtered out from the first candidate beam information based on the target beam energy in the target input parameter; That is, the energy difference between the historical beam energy of the second candidate beam information and the target beam energy is the smallest. Further, determine the final matched historical beam information from the filtered second candidate beam information.

[0057] If multiple second candidate beam information can still be found, and considering that the device state of the ion implantation device can change over time, in order to reduce the workload of subsequent parameter adjustment, and to make the completed beam information more consistent with the current device state of the ion implantation device, historical beam information is also selected from the second candidate beam information based on the target new date of the newly created beam. Corresponding to determining the historical beam information based on the second candidate beam information can also include steps 203A1 and 203A2.

[0058] Step 203A1, if there are multiple second candidate beam information, based on the target new date corresponding to the newly created beam, the historical beam information is selected from the second candidate beam information, and the time difference between the historical creation date of the historical beam information and the target new date is the smallest.

[0059] If there are multiple second candidate beam information, the target new date corresponding to the newly created beam can be obtained, and then the historical beam information is selected from the multiple second candidate beam information according to the target new date, and the time difference between the historical creation date of the historical beam information and the target new date is the smallest. The historical beam information finally obtained through three steps of screening is the beam information with the same type of doping ions, the closest ion energy, and the closest distance to the target new date.

[0060] Step 203A2, if there is only one second candidate beam information, the second candidate beam information is determined as the historical beam information.

[0061] Optionally, if only one second candidate beam information is obtained, the second candidate beam information can be directly determined as the final historical beam information.

[0062] Step 203B, if there is only one first candidate beam information, the first candidate beam information is determined as the historical beam information.

[0063] Optionally, if only one first candidate beam information is obtained, the first candidate beam information can be directly determined as the final historical beam information.

[0064] Step 204, based on the historical beam information and the target input parameter, the beam information of the newly created beam is supplemented to obtain the initial beam information of the newly created beam.

[0065] When the beam information of the newly created beam is supplemented based on the historical beam information and the target input parameter, the specific supplement process can include the following steps, that is, step 204 can include steps 204A-204E.

[0066] Step 204A, based on the target doping gas type in the target input parameter, the target doping gas type corresponding to the newly created beam is determined.

[0067] Wherein, the same doping gas type can correspond to multiple doping ion types, therefore, first, the target doping gas type required for the new beam is determined based on the target doping ion type in the target input parameter, and in combination with the pre-stored corresponding relationship between the doping ion type and the doping gas type.

[0068] Step 204B, based on the historical injection current, the historical beam transmission efficiency and the historical doping gas flow in the historical beam information, the initial doping gas flow required for the new beam is determined.

[0069] In a possible implementation, the historical injection current, the historical beam transmission efficiency and the historical doping gas flow are further obtained from the historical beam information, and the initial doping gas flow required for the new beam is calculated.

[0070] Step 204C, based on the historical beam information, the initial adjustment parameter of the ion implanter is determined.

[0071] Secondly, the historical adjustment parameter is obtained from the historical beam information, and the historical adjustment parameter is determined as the initial adjustment parameter of the ion implanter. The historical adjustment parameter includes: bias current value, arc voltage value, source magnetic field current value, Q1 current value, Q2 current value, Q3 current value, three-electrode X-axis position, three-electrode Y-axis position, three-electrode Z-axis position.

[0072] Step 204D, based on the target input parameter, the first initial current value of the mass analyzer and the second initial current value of the parallel lens in the ion implanter are determined.

[0073] Then, the first initial current value of the mass analyzer and the second initial current value of the parallel lens in the ion implanter are further determined according to the target input parameter.

[0074] For example, the calculation formula of the first initial current value and the second initial current value can be shown in formula (1):

[0075] (1)

[0076] Wherein, E represents the target ion energy, e is the ionization valence of the target ion, m is the ion relative molecular mass of the target ion, N is the number of turns of the coil, is the vacuum permeability. When calculating the first initial current value of the mass analyzer and the second initial current value of the parallel lens, the number of turns of the coils of the two devices can be inconsistent.

[0077] Step 204E, based on the target doping gas type, the target ion energy, the target injection current, the initial doping gas flow, the initial adjustment parameter, the first initial current value and the second initial current value, the initial beam information of the new beam is determined.

[0078] Further, the target doping gas type, the target ion energy, the target implantation current, the initial doping gas flow, the initial adjustment parameter, the first initial current value and the second initial current value are written into the initial beam information of the newly created beam.

[0079] Optionally, in addition to the initial beam information completed based on the target input parameters and the historical beam information, the initial beam information further includes filament current value, default value of analysis slit, multi-coil array current default value, multi-pole array pole default position and the like. The default value of analysis slit, the multi-coil array current default value, the multi-pole array pole default position and the like are pre-stored in the ion implantation equipment. After receiving the target input parameters, the ion implantation equipment can directly obtain the default value of analysis slit, the multi-coil array current default value and the multi-pole array pole default position, and write them into the initial beam information of the newly created input.

[0080] The filament current value corresponding to the newly created beam is also related to the device state of the ion implantation equipment. Therefore, the target new creation date corresponding to the newly created beam is obtained, and the historical filament current value is searched from the historical database based on the target new creation date. The time difference between the historical creation date corresponding to the historical filament current value and the target new creation date is the smallest. That is, the latest historical filament current value is retrieved from the historical database as the filament current value of the newly created beam.

[0081] The initial beam information of the newly created beam is determined based on the target doping gas type, the target ion energy, the target implantation current, the initial doping gas flow, the initial adjustment parameter, the first initial current value, the second initial current value, the historical filament current value, the default value of analysis slit, the multi-coil array current default value and the multi-pole array pole default position.

[0082] Please refer to Figure 3, which is a new beam flow parameter completion process provided by an exemplary embodiment of the present application. The process includes: writing the user-inputted doping ion species, ion energy and injection current into a newly created Recipe (process parameters); according to the user input, writing the doping gas type corresponding to the ion into the newly created Recipe. According to the user input, searching for the most recent beam information of the same ion with the closest ion energy in the historical database; according to the injection current, doping gas flow and beam transmission efficiency in the search result, calculating the required doping gas flow of the newly created Recipe, and writing the calculation result into the Recipe. According to the user input, writing the required extraction voltage and extraction suppression voltage into the newly created Recipe. According to the user input, obtaining beam history adjustment information, and writing the bias current value, arc voltage value, source magnetic field current value, Q1 current value, Q2 current value, Q3 current value, three-electrode X-axis position, three-electrode Y-axis position, three-electrode Z-axis position into the newly created Recipe. According to the user input, calculating the required current value of the mass analyzer and parallel lens, and writing the calculation result into the Recipe. Retrieving the latest filament current value from the historical database and writing it into the newly created Recipe. Writing the default value of the analysis slit, the default value of the multi-coil array current, and the default position of the magnetic poles on both sides of the multi-magnetic pole array parallel lens into the newly created Recipe.

[0083] Step 205, based on the initial beam information, the beam guiding process is performed to obtain a working ion beam indicated by the newly created beam.

[0084] The ion beam generated based on the initial beam information may still differ from the final working ion beam. In order to meet the requirements of the working ion beam, the initial beam information also needs to be automatically adjusted to obtain the final target beam information, and then the working ion beam is generated based on the target beam information.

[0085] The process of specifically adjusting the initial beam information can be referred to in the following embodiments, which will not be described here.

[0086] Optionally, after obtaining the adjusted target beam information, the target beam information can be stored in the historical database to update the historical database, so that the historical beam information in the historical database is more consistent with the equipment state of the ion implantation equipment, and is more conducive to the accuracy of subsequent newly created beams.

[0087] In the present embodiment, a plurality of beam information completion methods are provided, so that the automatic generation of the corresponding beam information of the newly created beam is realized under the condition of inputting fewer parameters by the user; in addition, when the historical beam information is screened from the historical database, the historical beam information is the beam information with the same doping ion type, the closest ion energy and the closest date, which can select the beam information that meets the requirements of the newly created beam as much as possible, and reduce the workload of subsequent parameter adjustment.

[0088] The above embodiments mainly describe the process of how to complete the initial beam information. This embodiment mainly describes the adjustment process of the initial beam information.

[0089] Please refer to Figure 4 , Figure 4 A flowchart of a beam guiding method of another ion implanter according to an example embodiment of the present application is shown. The method is described by taking the application to an ion implantation device as an example. As shown in Figure 4 , the method comprises:

[0090] Step 401: obtaining target input parameters of a new beam, the target input parameters comprising a target doping ion type, a target beam energy and a target implantation current.

[0091] Step 402: searching for historical beam information from a historical database based on the target input parameters, the historical doping ion type in the historical beam information being the same as the target doping ion type.

[0092] Step 403: supplementing the beam information of the new beam based on the historical beam information and the target input parameters to obtain initial beam information of the new beam.

[0093] The implementation of steps 401-403 can refer to the above embodiments, which will not be described here.

[0094] Step 404: setting the ion implanter based on the initial beam information to make the ion implanter generate an initial ion beam.

[0095] First, the ion implanter is set based on each parameter in the initial beam information, and the required gas is input to make the ion implanter generate an initial ion beam. The SetUp current of the initial ion beam is measured to adjust the initial beam information.

[0096] Step 405: adjusting the initial beam information based on the measured value of the initial ion beam to obtain target beam information.

[0097] The measured value mainly comprises the SetUp current, the beam level angle, the beam implantation current, the beam uniformity, etc. The above measured values of the initial ion beam are measured automatically to adjust each initial beam information until each measured value meets the requirements to obtain the target beam information.

[0098] Figure 5 is a beam automatic adjustment flowchart provided by an example embodiment of the present application. As shown in Figure 5 , the flowchart comprises: setting the power supply (ion implanter) according to the information (initial beam information) in the new Recipe, and inputting the required gas.

[0099] Adjusting the mass analyzer current, the three-electrode X-axis position, the three-electrode Y-axis position, the three-electrode Z-axis position, the Q1 current and the Q2 current in sequence so that the ion beam SetUp current reaches the maximum.

[0100] Adjusting the bias current, the arc voltage and the source magnetic field current in sequence so that the SetUp current reaches the maximum.

[0101] Adjusting the mass analyzer current, the three-electrode X-axis position, the three-electrode Y-axis position, the three-electrode Z-axis position, the Q1 current and the Q2 current in sequence so that the SetUp current reaches the maximum.

[0102] Calculating the upper and lower limits of the SetUp current according to the injection current and the beam transmission efficiency.

[0103] Determining whether the SetUp current is within the limited range (the limited range refers to the upper and lower limits of the SetUp current).

[0104] If not, adjusting the dopant gas flow, the source magnetic field current, the mass analyzer current, the three-electrode X-axis position, the three-electrode Y-axis position, the three-electrode Z-axis position, the Q1 current and the Q2 current in sequence until the SetUp current meets the upper and lower limit requirements.

[0105] If yes, i.e. after the SetUp current meets the requirements, the beam is discharged to the backend, and the horizontal angle of the beam is detected by the moving Faraday. When the horizontal angle does not meet the requirements, the parallel lens current is adjusted so that the horizontal angle of the beam meets the requirements.

[0106] The injection current is detected by the moving Faraday. When the injection current does not meet the requirements (not meeting the requirements indicates that the injection current obtained by the test is less than the target injection current), the dopant gas flow is adjusted so that the injection current meets the requirements.

[0107] The beam uniformity is adjusted by the multi-coil array and the multi-pole array until it meets the requirements.

[0108] Wherein, when calculating the upper and lower limits of the SetUp current according to the injection current and the beam transmission efficiency, the upper limit of the SetUp current is calculated according to the injection current and the maximum beam transmission efficiency, and the lower limit of the SetUp current is calculated based on the injection current and the minimum beam transmission efficiency. Moreover, the injection current is the injection current in the target input parameter.

[0109] Moreover, the beam current adjustment link in the embodiment is divided into two parts: the SetUp current adjustment and the end current adjustment. In the adjustment process, some power supplies are repeatedly adjusted, which effectively avoids the problems of excessively high arc current or excessively high extraction suppression current that may be caused by unreasonable Recipe parameters, and has a certain protection effect on the devices in the equipment.

[0110] In step 406, the ion implanter is set based on the target beam information, so that the ion implanter generates a working ion beam.

[0111] After obtaining the target beam information of the adjustment completion, the ion implanter can be set based on the target beam information, and the required gas is introduced to generate a working ion beam.

[0112] In this embodiment, the initial beam information is automatically adjusted by the preset adjustment process, so that the new beam corresponding to the beam information is divided into two parts: the complete beam information and the adjusted beam information, thereby achieving the purpose of obtaining the required working ion beam only by inputting a few parameters, and improving the automation process of the new beam.

[0113] Please refer to Figure 6 , which is a structural schematic diagram of a beam guiding device of an ion implanter provided by an embodiment of the present application. The device comprises:

[0114] The first acquisition module 601 is configured to acquire target input parameters of a new beam, wherein the target input parameters comprise a target doping ion type, a target beam energy, and a target injection current;

[0115] The first finding module 602 is configured to find historical beam information from a historical database based on the target input parameters, wherein the historical doping ion type in the historical beam information is the same as the target doping ion type;

[0116] The parameter completion module 603 is configured to supplement the beam information of the new beam based on the historical beam information and the target input parameters, to obtain initial beam information of the new beam;

[0117] The control module 604 is configured to perform a beam guiding process based on the initial beam information, to obtain a working ion beam indicated by the new beam.

[0118] Optionally, the first finding module 602 is further configured to:

[0119] find first candidate beam information from the historical database based on the target doping ion type in the target input parameters, wherein the historical doping ion type in the first candidate beam information is the same as the target doping ion type;

[0120] determine the historical beam information based on the first candidate beam information.

[0121] Optionally, the first finding module 602 is further configured to:

[0122] If there are multiple first candidate beam information, second candidate beam information is selected from the first candidate beam information based on the target beam energy in the target input parameter, and an energy difference between the historical beam energy of the second candidate beam information and the target beam energy is the smallest; the historical beam information is determined based on the second candidate beam information;

[0123] If there is only one first candidate beam information, the first candidate beam information is determined as the historical beam information.

[0124] Optionally, the first searching module 602 is further configured to:

[0125] If there are multiple second candidate beam information, the historical beam information is selected from the second candidate beam information based on a target new creation date corresponding to the new beam, and a time difference between the historical creation date of the historical beam information and the target new creation date is the smallest;

[0126] If there is only one second candidate beam information, the second candidate beam information is determined as the historical beam information.

[0127] Optionally, the parameter completion module 603 is further configured to:

[0128] Based on the target doping ion type in the target input parameter, a target doping gas type corresponding to the new beam is determined;

[0129] Based on the historical injection current, the historical beam transmission efficiency and the historical doping gas flow in the historical beam information, an initial doping gas flow required by the new beam is determined;

[0130] Based on the historical beam information, initial adjustment parameters of the ion implanter are determined;

[0131] Based on the target input parameter, a first initial current value of a mass analyzer and a second initial current value of a parallel lens in the ion implanter are determined;

[0132] Based on the target doping gas type, the target ion energy, the target injection current, the initial doping gas flow, the initial adjustment parameters, the first initial current value and the second initial current value, the initial beam information of the new beam is determined.

[0133] Optionally, the apparatus further comprises:

[0134] The second acquisition module is configured to acquire a target new creation date corresponding to the new beam;

[0135] The second searching module is configured to search for a historical filament current value from the historical database based on the target newly created date, wherein the historical filament current value corresponds to a historical created date that has a minimum time difference with the target newly created date.

[0136] The parameter completion module 603 is further configured to:

[0137] The initial beam information of the newly created beam is determined based on the target doping gas type, the target ion energy, the target injection flow intensity, the initial doping gas flow, the initial adjustment parameter, the first initial current value, the second initial current value, and the historical filament current value.

[0138] Optionally, the control module 604 is further configured to:

[0139] The ion implanter is set based on the initial beam information, so that the ion implanter generates an initial ion beam.

[0140] The initial beam information is adjusted based on a measured value of the initial ion beam, to obtain target beam information.

[0141] The ion implanter is set based on the target beam information, so that the ion implanter generates the working ion beam.

[0142] The exemplary embodiments of the present application further provide an ion implantation device, comprising at least one processor, and a memory connected with the at least one processor in communication. The memory stores a computer program capable of being executed by the at least one processor, and the computer program, when executed by the at least one processor, is configured to cause the ion implantation device to perform the beam guiding method of the ion implanter according to the embodiments of the present application.

[0143] The exemplary embodiments of the present application further provide a non-transitory computer readable storage medium storing a computer program, wherein the computer program, when executed by a processor of a computer, is configured to cause the computer to perform the beam guiding method of the ion implanter according to the embodiments of the present application.

[0144] The exemplary embodiments of the present application further provide a computer program product comprising a computer program, wherein the computer program, when executed by a processor of a computer, is configured to cause the computer to perform the beam guiding method of the ion implanter according to the embodiments of the present application.

[0145] Reference Figure 7The following is a structural block diagram of an ion implantation device 700 that can serve as a server or client in this application, which is an example of a hardware device that can be applied to various aspects of this application. The ion implantation device is intended to represent various forms of digital electronic computer devices, such as laptop computers, desktop computers, workbenches, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The ion implantation device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the application described and / or claimed herein.

[0146] like Figure 7 As shown, the ion implantation device 700 includes a computing unit 701, which can perform various appropriate actions and processes according to a computer program stored in ROM 702 or a computer program loaded into RAM 703 from storage unit 708. RAM 703 can also store various programs and data required for the operation of device 700. The computing unit 701, ROM 702, and RAM 703 are interconnected via bus 704. I / O interface 705 is also connected to bus 704.

[0147] Multiple components in the ion implantation device 700 are connected to the I / O interface 705, including: an input unit 706, an output unit 707, a storage unit 708, and a communication unit 709. The input unit 706 can be any type of device capable of inputting information into the ion implantation device 700. The input unit 706 can receive input digital or character information and generate key signal inputs related to user settings and / or function control of the beam ion implantation device. The output unit 707 can be any type of device capable of presenting information and may include, but is not limited to, a display, speaker, video / audio output terminal, vibrator, and / or printer. The storage unit 708 may include, but is not limited to, a hard disk or optical disk. The communication unit 709 allows the ion implantation device 700 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks, and may include, but is not limited to, modems, network interface cards, infrared communication devices, wireless communication transceivers, and / or chipsets, such as Bluetooth devices, WiFi devices, WiMax devices, cellular communication devices, and / or the like.

[0148] The computing unit 701 can be various general and / or special purpose processing components with processing and computing capabilities. Some examples of the computing unit 701 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various specialized artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 701 performs various methods and processes described above. For example, in some embodiments, Figure 3 , Figure 4 , Figure 5 The methods shown in FIGS. 1-3 can be implemented as a computer software program tangibly embodied in a machine readable medium, such as the storage unit 708. In some embodiments, portions or all of the computer program can be loaded and / or installed onto the ion implantation apparatus 700 via the ROM 702 and / or the communication unit 709. In some embodiments, the computing unit 701 can be configured to perform the methods shown in FIGS. 1-3 by other suitable means, such as by way of firmware. Figure 3 , Figure 4 , Figure 5

[0149] Program code for carrying out methods of the present application can be written in any combination of one or more programming languages. The program code can be provided to a processor or controller of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the program code, when executed by the processor or controller, produces the functions / operations specified in the flowcharts and / or the block diagrams. The program code can be embodied on one or more non-transitory computer readable media that can be read by a machine, such as a general purpose computer, special purpose computer, or other programmable data processing apparatus. The program code can be executed by the machine to produce the functions / operations specified in the flowcharts and / or the block diagrams.

[0150] In the context of the present application, a machine-readable medium can be a tangible medium that contains or stores a program for use by or in connection with an instruction execution system, apparatus, or device. The machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium can include but is not limited to an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. More specific examples of the machine-readable storage medium will include one or more lines of electrical connections, portable computer disks, hard disk drives, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or Flash memory), optical fibers, portable compact disc read-only memories (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0151] ​As used in this application, the terms "machine-readable medium" and "computer- readable medium" refer to any computer program product, apparatus and / or device (e.g., magnetic discs, optical disks, memory, Programmable Logic Devices (PLDs)) used to provide machine instructions and / or data to a programmable processor, including a machine-readable medium that receives machine instructions as a machine-readable signal. The term "machine-readable signal" refers to any signal used to provide machine instructions and / or data to a programmable processor.

[0152] To provide for interaction with a user, the systems and techniques described here can be implemented on a computer having a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user and a keyboard and a pointing device (e.g., a mouse or a trackball) by which the user can provide input to the computer. Other kinds of devices can be used to provide for interaction with a user as well; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form, including acoustic, speech, or tactile input.

[0153] The systems and techniques described here can be implemented in a computing system that includes a back end component (e.g., as a data server), or that includes a middleware component (e.g., an application server), or that includes a front end component (e.g., a client computer having a graphical user interface or a Web browser through which a user can interact with an implementation of the systems and techniques described here), or any combination of such back end, middleware, or front end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include a local area network (LAN), a wide area network (WAN), and the Internet.

[0154] The computing system can include clients and servers. A client and server are generally remote from each other and typically interact through a communication network. The relationship of client and server arises by virtue of computer programs running on the respective computers and having a client-server relationship to each other.

Claims

1. A beam-attracting method for an ion implanter, characterized in that, The method includes: Obtain the target input parameters for the new beam, including the target dopant ion type, target beam energy, and target injection current. Based on the target input parameters, historical beam information is retrieved from the historical database, and the type of historical doped ions in the historical beam information is the same as the type of target doped ions. The beam information of the newly created beam is supplemented based on the historical beam information and the target input parameters to obtain the initial beam information of the newly created beam. Based on the initial beam information, a beam-initiating process is performed to obtain the working ion beam indicated by the newly created beam. The step of supplementing the beam information of the newly created beam based on the historical beam information and the target input parameters to obtain the initial beam information of the newly created beam includes: Based on the target doped ion type in the target input parameters, determine the target doped gas type corresponding to the new beam; Based on the historical injection current intensity, historical beam transmission efficiency and historical dopant gas flow rate in the historical beam information, the initial dopant gas flow rate required for the new beam is determined. Based on the historical beam information, the initial adjustment parameters of the ion implanter are determined; Based on the target input parameters, determine the first initial current value of the mass analyzer and the second initial current value of the parallel lens in the ion implanter; Based on the target doping gas type, the target beam energy, the target injection current intensity, the initial doping gas flow rate, the initial adjustment parameters, the first initial current value, and the second initial current value, the initial beam information of the newly created beam is determined.

2. The method according to claim 1, characterized in that, The step of retrieving historical beam information from the historical database based on the target input parameters includes: Based on the target doped ion type in the target input parameters, first candidate beam information is retrieved from the historical database, and the historical doped ion type in the first candidate beam information is the same as the target doped ion type. The historical beam information is determined based on the first candidate beam information.

3. The method according to claim 2, characterized in that, Determining the historical beam information based on the first candidate beam information includes: If multiple first candidate beam information exist, based on the target beam energy in the target input parameters, second candidate beam information is selected from the first candidate beam information, wherein the energy difference between the historical beam energy of the second candidate beam information and the target beam energy is the smallest; the historical beam information is determined based on the second candidate beam information. If a single candidate beam information exists, the candidate beam information is determined as the historical beam information.

4. The method according to claim 3, characterized in that, The step of determining the historical beam information based on the second candidate beam information includes: If there are multiple candidate beam information, the historical beam information is selected from the candidate beam information based on the target creation date corresponding to the new beam, and the time difference between the historical creation date and the target creation date of the historical beam information is minimized. If a single candidate beam information exists, the candidate beam information is determined as the historical beam information.

5. The method according to claim 1, characterized in that, The method further includes: Obtain the target creation date corresponding to the newly created beam; Based on the target creation date, retrieve historical filament current values ​​from the historical database, where the time difference between the historical creation date corresponding to the historical filament current value and the target creation date is minimized; The determination of the initial beam information of the newly created beam based on the target doping gas type, the target beam energy, the target injection current intensity, the initial doping gas flow rate, the initial adjustment parameters, the first initial current value, and the second initial current value includes: The initial beam information of the newly created beam is determined based on the target doping gas type, the target beam energy, the target injection current intensity, the initial doping gas flow rate, the initial adjustment parameters, the first initial current value, the second initial current value, and the historical filament current value.

6. The method according to any one of claims 1 to 4, characterized in that, The beam-guiding process based on the initial beam information to obtain the working ion beam indicated by the newly created beam includes: The ion implanter is configured based on the initial beam information so that the ion implanter generates an initial ion beam; The initial beam current information is adjusted based on the measured values ​​of the initial ion beam to obtain the target beam current information; The ion implanter is configured based on the target beam information so that it generates the working ion beam.

7. A beam-attracting device for an ion implanter, characterized in that, The device includes: The first acquisition module is used to acquire the target input parameters of the newly created beam, including the target dopant ion type, the target beam energy, and the target injection current. The first search module is used to search for historical beam information from the historical database based on the target input parameters, wherein the historical doped ion type in the historical beam information is the same as the target doped ion type. The parameter completion module is used to supplement the beam information of the newly created beam based on the historical beam information and the target input parameters to obtain the initial beam information of the newly created beam. The control module is used to perform a beam induction process based on the initial beam information to obtain the working ion beam indicated by the newly created beam. The parameter completion module is further configured to: determine the target doping gas type corresponding to the newly created beam based on the target doped ion type in the target input parameters; determine the initial doping gas flow rate required for the newly created beam based on the historical injection current intensity, historical beam transmission efficiency, and historical doping gas flow rate in the historical beam information; determine the initial adjustment parameters of the ion implanter based on the historical beam information; determine the first initial current value of the mass analyzer and the second initial current value of the parallel lens in the ion implanter based on the target input parameters; and determine the initial beam information of the newly created beam based on the target doping gas type, the target beam energy, the target injection current intensity, the initial doping gas flow rate, the initial adjustment parameters, the first initial current value, and the second initial current value.

8. An ion implantation apparatus, comprising: The processor and the memory that stores the program; The program includes instructions that, when executed by the processor, cause the processor to perform the method according to any one of claims 1-6.

9. A non-transitory computer-readable storage medium storing computer instructions, wherein, The computer instructions are used to cause the computer to perform the method according to any one of claims 1-6.

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