Gas spray header, vapor deposition equipment and use method of vapor deposition equipment

Abstract

The invention discloses a gas spray header, vapor deposition equipment and a use method of the gas spray header. The gas spray header comprises a gas distribution plate, a plurality of first gas holes and a first conveying channel distributed on the gas distribution plate at intervals. The second gas holes are distributed in the second conveying channel on the gas distribution plate at intervals, and the first gas holes and the second gas holes are used for supplying the first gas and the second gas to the surface of the substrate to be processed. The first gas conveying channel located in the center of the gas distribution plate is called a center first gas conveying channel, and the second gas conveying channel adjacent to the center first gas conveying channel is called a center second gas conveying channel. Outlets of the second gas center gas supplementing holes are distributed in the area where the center first gas conveying channel is located at intervals, and the second gas center gas supplementing holes are used for supplementing second gas to the center area below the gas distribution plate. According to the invention, the distribution uniformity of the gas-phase precursor in the central area of the reaction cavity is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and particularly relates to a gas showerhead, a chemical vapor deposition equipment and a using method thereof. Background Art

[0002] Under vacuum conditions, growing a thin film on the surface of a substrate by chemical vapor deposition technology is an important way to obtain thin film materials with excellent mechanical properties and special physical / chemical properties, and is a research hotspot in the fields of material science, physical science, etc.

[0003] ALD (Atomic Layer Deposition) technology is one of the most widely used thin film growth technologies at present. In essence, it also belongs to a kind of chemical vapor deposition (CVD). It mainly alternately introduces gaseous precursors into a reactor in pulses and adsorbs them on a deposition substrate, and uses the chemical action between atoms to react to form a deposition film. Compared with thin film preparation methods such as physical vapor deposition (PVD) and chemical vapor deposition, ALD has significant advantages in the conformality and uniformity of growing thin films due to its unique reaction mechanism.

[0004] During atomic layer deposition processing, different types of gaseous precursors (referred to as the first gas and the second gas for short) are required to be alternately introduced into a processing chamber containing a substrate through a gas showerhead in a chemical vapor deposition equipment; and a uniform reaction gas needs to be provided to the substrate. That is, different types of gaseous precursors in the gas showerhead are required not to mix with each other, and also to be isolated from each other without gas leakage. Therefore, the structure of the existing gas showerhead includes a plurality of concentric circular air channels. The plurality of concentric circular air channels include a plurality of first gas delivery channels and second gas delivery channels. The plurality of first gas delivery channels and the plurality of second gas delivery channels are alternately arranged. The delivery channels of the same type of gas are connected through a third air channel located on a cover plate between the concentric circles. In the structure of such a gas showerhead, the gas delivery channel located in the central circle can only be used to deliver the first gas. Assuming that the gas delivery channel in the central circle is a first gas delivery channel and its outer side is a second gas delivery channel, this will cause the problem that the concentration of the second gas is significantly reduced in the central region of the reaction chamber, that is, the problem that the first gas and the second gas are unevenly distributed in the central region of the reaction chamber. Summary of the Invention

[0005] The purpose of the present invention is to provide a gas showerhead, a chemical vapor deposition equipment and a using method thereof, so as to provide different types of gaseous precursors with uniform distribution in a reaction chamber under the condition that different types of gaseous precursors are isolated from each other in the gas showerhead.

[0006] In order to achieve the above purpose, the present invention is realized through the following technical solutions:

[0007] A gas shower head, comprising: a gas distribution plate, on which a gas delivery channel is provided, the gas delivery channel including a plurality of first delivery channels for delivering a first gas and a plurality of second delivery channels for delivering a second gas, the plurality of first delivery channels and the plurality of second delivery channels being alternately arranged and concentrically disposed. A plurality of first gas orifices are spaced apart and distributed on the first delivery channels. A plurality of second gas orifices are spaced apart and distributed on the second delivery channels, the first gas orifices and the second gas orifices being used to supply the first gas and the second gas to the surface of a substrate to be processed.

[0008] The first gas delivery channel located at the center of the gas distribution plate is a central first gas delivery channel, and the second gas delivery channel adjacent to the central first gas delivery channel is a central second gas delivery channel.

[0009] A plurality of second gas central supply orifices, the inlets of the plurality of second gas central supply orifices being provided on the central second gas delivery channel, the outlets of the plurality of second gas central supply orifices being spaced apart and distributed between two first gas orifices of the central first gas delivery channel, and being used to supply the second gas to the central region below the gas distribution plate.

[0010] Optionally, there is a spacing area between the first delivery channel and the second delivery channel, and the outlets of the plurality of second gas central supply orifices are spaced apart and distributed on the spacing area between the central first delivery channel and the central second delivery channel, and are used to supply the second gas to the central region below the gas distribution plate.

[0011] Optionally, the outlet direction of each second gas central supply orifice faces the central axis of the gas distribution plate.

[0012] Optionally, the distance between the outlet of each second gas central supply orifice and the outlets of two adjacent first gas orifices is equal.

[0013] Optionally, the range of the angle between the inclination direction of each second gas central supply orifice and the vertical direction is 30° to 60°.

[0014] Optionally, the gas shower head further comprises: a cover plate, which covers the gas distribution plate, and a gas communication channel is provided on the cover plate, the gas communication channel including a plurality of first gas communication channels and a plurality of second gas communication channels. The first gas communication channels cross the second delivery channels to connect two adjacent first delivery channels. The second gas communication channels cross the first delivery channels to connect two adjacent second delivery channels.

[0015] Optionally, each of the first gas delivery channels and each of the second gas delivery channels is a non - communicating C - shaped groove. A plurality of first partition plates, each of the first partition plates is disposed in a corresponding one of the first gas delivery channels. A plurality of second partition plates, each of the second partition plates is disposed in a corresponding one of the second gas delivery channels.

[0016] A plurality of first gas supply holes, the inlet of each of the first gas supply holes is located on the first gas delivery channel and is disposed close to the first partition plate; the outlet of each of the first gas supply holes is located on the spacer area and is disposed close to the intersection between the first partition plate and the spacer area, so as to supply the first gas to the area where the corresponding second gas delivery channel is located.

[0017] A plurality of second gas supply holes, the inlet of each of the second gas supply holes is located on the second gas delivery channel and is disposed close to the second partition plate; the outlet of each of the second gas supply holes is located on the spacer area and is disposed close to the intersection between the second partition plate and the spacer area, so as to supply the second gas to the area where the corresponding first gas delivery channel is located.

[0018] Optionally, the outlet of each of the first gas supply holes is located between the outlets of two of the second gas holes on the corresponding second gas delivery channel. The outlet of each of the second gas supply holes is located between the outlets of two of the first gas holes on the corresponding first gas delivery channel.

[0019] Optionally, the distance between the outlet of each of the first gas supply holes and the outlets of two adjacent second gas holes is equal. The distance between the outlet of each of the second gas supply holes and the outlets of two adjacent first gas holes is equal.

[0020] Optionally, the gas outlet direction of each of the first gas supply holes and the second gas supply holes does not face the central axis of the gas distribution plate.

[0021] Optionally, the included angle between the inclination direction of the first gas supply hole or the second gas supply hole and the vertical direction is less than 45°.

[0022] Optionally, the included angle between the inclination direction of the first gas hole or the second gas hole and the vertical direction is 10° - 30°.

[0023] Optionally, two circles of the first gas pores are provided on the central first gas delivery channel, and the inlets of one circle of the first gas pores are arranged near the inner ring side wall of the first gas delivery channel; the inlets of the other circle of the first gas pores are arranged near the outer ring side wall of the first gas delivery channel. One circle of the second gas pores is further provided on the central second gas delivery channel, and the inlets of the second gas pores are arranged near the outer ring side wall of the second gas delivery channel.

[0024] Optionally, a first inlet end communicating with the first delivery channel is configured to deliver a first gas into the first delivery channel. A first low-pressure source is communicated with the first outlet end of the first delivery channel and is configured to provide a low pressure at the first outlet end. A second inlet end communicating with the second delivery channel is configured to deliver a second gas into the second delivery channel. A second low-pressure source is communicated with the second outlet end of the second delivery channel and is configured to provide a low pressure at the second outlet end.

[0025] On the other hand, the present invention further provides a chemical vapor deposition apparatus, including: a reaction chamber; a susceptor disposed at the inner bottom of the reaction chamber for supporting a substrate; and the gas showerhead as described above, wherein the gas showerhead is disposed at the top of the reaction chamber and is oppositely disposed with respect to the susceptor for providing reaction gases to the surface of the substrate.

[0026] On yet another aspect, the present invention further provides a method of using the chemical vapor deposition apparatus as described above, including: Step a, introducing a first gas into the first delivery channel, and the second low-pressure source is in a closed state.

[0027] Step b, stopping introducing the first gas, introducing a purge gas into the first delivery channel, and the first low-pressure source is in an open state.

[0028] Step c, closing the first low-pressure source, introducing a second gas into the second delivery channel. The second gas is supplemented to the central area below the first gas delivery channel located at the center of the gas distribution plate through a plurality of second gas central supply pores spaced apart on the second gas delivery channel adjacent to the first gas delivery channel located at the center of the gas distribution plate. Step d, stopping introducing the second gas, introducing a purge gas into the second delivery channel, and the second low-pressure source is in an open state. Repeat Steps a to d.

[0029] The present invention has at least one of the following technical effects:

[0030] A gas showerhead provided by the present invention realizes providing different types of gas-phase precursors (a first gas and a second gas) into the reaction chamber while different types of gas-phase precursors are isolated from each other in the gas showerhead through the provided first and second gas delivery channels.

[0031] By providing a plurality of second gas central gas supply holes, the second gas is supplemented to the lower central area of ​​the gas distribution plate, thereby solving the problem that since there is only one type of gas delivery channel (for example, the first gas delivery channel) in the central area of ​​the gas distribution plate, the concentration of such gas (for example, the first gas) in the central area of ​​the gas distribution plate is too high, while the concentration of other types of gases (for example, the second gas) is relatively low, which in turn leads to uneven distribution of gas phase precursors in the central area of ​​the reaction chamber.

[0032] The gas outlet direction of the second gas center gas supply hole of the present invention is toward the central axis of the gas distribution plate, thereby better supplying gas to the central area of ​​the reaction chamber and promoting a more uniform distribution of the gas phase precursor in the central area of ​​the reaction chamber.

[0033] The first gas supply hole and the second gas supply hole of the present invention can be used to supply gas to the interval area where the first gas hole and the second gas hole cannot be opened, and to supply gas to the area where the corresponding first gas delivery channel and the second gas delivery channel are located, thereby improving the uniformity of the gas phase precursor distribution in the area. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 A schematic diagram of a top view of the central area of ​​a gas shower head provided in one embodiment of the present invention;

[0035] Figure 2 A schematic diagram of a longitudinal cross-sectional structure of a gas shower head provided in one embodiment of the present invention;

[0036] Figure 3 A schematic diagram of a top view of a gas shower head provided by an embodiment of the present invention;

[0037] Figure 4 A schematic diagram of the longitudinal cross-sectional structure of various types of pores provided in one embodiment of the present invention;

[0038] Figure 5 A schematic structural diagram of a vapor deposition device provided in one embodiment of the present invention. DETAILED DESCRIPTION

[0039] The following further describes in detail a gas showerhead, a chemical vapor deposition apparatus, and a method for using the same according to the present invention in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the accompanying drawings are in a very simplified form and use non-precise scales, only for conveniently and clearly assisting in explaining the purpose of the embodiments of the present invention. In order to make the purpose, features, and advantages of the present invention more obvious and understandable, please refer to the accompanying drawings. It should be noted that the structures, scales, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those skilled in this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention. Therefore, they do not have technical essential meanings. Any modification of the structure, change of the proportional relationship, or adjustment of the size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope covered by the technical content disclosed in the present invention.

[0040] As Figure 1 shown, a gas showerhead provided in this embodiment includes: a gas distribution plate 10, the gas distribution plate 10 is provided with a gas delivery channel, the gas delivery channel includes a plurality of first delivery channels 100 for delivering a first gas and a plurality of second delivery channels 200 for delivering a second gas, and the plurality of first delivery channels 100 and the plurality of second delivery channels 200 are arranged alternately and concentrically.

[0041] As Figure 2 shown, a cover plate 11 is covered on the gas distribution plate 10, the cover plate 11 is provided with a gas communication channel, the gas communication channel includes a plurality of first gas communication channels 120 and a plurality of second gas communication channels 220; the first gas communication channel 120 crosses the second delivery channel 200 to connect two adjacent first delivery channels 100; the second gas communication channel 220 crosses the first delivery channel 100 to connect two adjacent second delivery channels 200.

[0042] A plurality of first gas pores (as Figure 1 indicated by reference numerals 101 and 102 in

[0043] ), are distributed at intervals on the first delivery channel 100, the inlet of the first gas pore is arranged on the first delivery channel 100, and the outlet of the first gas pore is arranged in the interval area 103 between the first delivery channel 100 and the second delivery channel 200. Figure 1 indicated by reference numeral 203 in Figure 2As shown by reference numerals 204 and 205, they are spaced apart and distributed on the second delivery channel 200. The inlet of the second gas pore is provided on the second delivery channel 200, and the outlet of the second gas pore is provided in the spaced area 103 between the first delivery channel 100 and the second delivery channel 200. The first gas pore and the second gas pore are used to supply the first and second gases to the surface of the substrate to be processed ( Figure 1 not shown in the figure).

[0044] It can be understood that, for the convenience of description, the first gas delivery channel 100 located at the center of the gas distribution plate 10 is referred to as the central first gas delivery channel, and the second gas delivery channel 200 adjacent to the central first gas delivery channel is referred to as the central second gas delivery channel.

[0045] A plurality of second gas central supplementary pores 201. The outlets of the plurality of second gas central supplementary pores 201 are spaced apart and distributed on the gap between the central first gas delivery channel and the central second gas delivery channel, and are used to supplement the second gas to the central area below the gas distribution plate 10.

[0046] Please continue to refer to Figure 2 As shown, in this embodiment, the gas distribution plate 10 is provided with a front surface 12 and a back surface 13 which are oppositely arranged. The back surface 13 is arranged inside the reaction chamber, and the front surface 12 is arranged away from the inside of the reaction chamber. The gas delivery channels which are recessed towards the back surface 13 are provided on the front surface 12 of the gas distribution plate 10. The cover plate 11 is covered on the front surface 12 of the gas distribution plate 10 and is hermetically connected to the gas distribution plate 10 to prevent the first gas and the second gas from mixing in the gas distribution plate, and to prevent the first gas and the second gas from diffusing into the external atmospheric environment through the gap between the two, thus polluting the environment.

[0047] Two circles of the first gas pores are provided on each of the first delivery channels 100. For each of the first gas pores in one circle (such as Figure 2 shown by reference numeral 101), the inlet is arranged close to the inner sidewall of the first delivery channel 100. The outlet of the first gas pore (such as Figure 2 shown by reference numeral 101) is provided on the back surface 13 of the gas distribution plate 10 and faces the central axis of the gas distribution plate 10. For each of the first gas pores in the other circle (such as Figure 2 shown by reference numeral 102), the inlet is arranged close to the outer sidewall of the first delivery channel 100. The outlet of the first gas pore (such as Figure 2 shown by reference numeral 102) is provided on the back surface 13 of the gas distribution plate 10 and is arranged away from the central axis of the gas distribution plate 10.

[0048] Please continue to refer to Figure 2 As shown, in this embodiment, except for the central second gas delivery channel, two circles of the second gas pores are provided on each of the second delivery channels 100 ( Figure 2 as indicated by reference numerals 204 and 205 in Figure 2 ). For each of the second gas pores in one circle (such as Figure 2 reference numeral 204 in Figure 2 ), the inlet is arranged close to the inner circumferential sidewall of the second delivery channel 200, and the outlet of the second gas pore (such as Figure 2 reference numeral 204 in

[0049] is opened on the back surface 13 of the gas distribution plate 10 and faces the central axis of the gas distribution plate 10. For each of the second gas pores in the other circle (such as Figure 1 and Figure 2 reference numeral 205 in Figure 1 ), the inlet is arranged close to the outer circumferential sidewall of the second delivery channel 200, and the outlet of the second gas pore (such as Figure 2 reference numeral 205 in Figure 2 is opened on the back surface 13 of the gas distribution plate 10 and is arranged away from the central axis of the gas distribution plate 10.

[0050] For each of the second gas central compensation pores 201, the inlet is arranged close to the center line of the central second delivery channel, and the outlet of the second gas central compensation pore 201 is opened on the back surface 13 of the gas distribution plate 10 and is arranged close to the central axis of the gas distribution plate 10.

[0051] Combining Figure 1 and Figure 2 as shown, there is a spacing area 103 between the two first delivery channels 100 and the second delivery channel 200. The outlets of multiple second gas central compensation pores 201 are spacedly distributed on the spacing area 103 between the central first gas delivery channel and the central second gas delivery channel to supplement the second gas to the central area below the gas distribution plate 10. The spacing area 103 should be as small as possible to accommodate more first delivery channels 100 and second delivery channels 200.

[0052] Please continue to refer to Figure 1 As shown, the gas outlet direction of each of the second gas central air supplement holes 201 faces the central axis of the gas distribution plate 10. This can facilitate the supplement of the second gas to the central area below the gas distribution plate 10, improve the air supplement effect, and improve the distribution uniformity of various gas-phase precursors in the central area below the gas distribution plate 10.

[0053] Please continue to refer to Figure 1 As shown, in this embodiment, the outlet of each of the second gas central air supplement holes 201 is located between the outlets of two of the first gas holes on the central first gas delivery channel (reference can be made to Figure 1 the reference numeral 102 in). The purpose of this setting is to ensure that the outlet holes of the first gas and the second gas arranged on the same interval area 103 are alternately arranged, ensure that the gas outlets on the circumference at the same radius position of the gas distribution plate 10 can be evenly arranged, and further ensure the distribution uniformity of the first gas and the second gas. The second gas central air supplement hole 201 can also supplement the air in the area between the outlets of the two first gas holes (reference can be made to Figure 1 the reference numeral 102 in), thereby realizing the air supplement to the central area below the gas distribution plate 10 and realizing the improvement of the distribution uniformity of various gas-phase precursors in this area.

[0054] In this embodiment or some other embodiments, the distance between the outlet of each of the second gas central air supplement holes 201 and the outlets of two adjacent first gas holes (reference can be made to Figure 1 the reference numeral 102 in) is equal. This can better realize the uniform air supplement to the area between the outlets of the two first gas holes (reference can be made to Figure 1 the reference numeral 102 in).

[0055] In this embodiment or some other embodiments, the range of the angle β1 between the inclination direction of each of the second gas central air supplement holes 201 and the vertical direction is 30° to 60°, and the outlet of the second gas central air supplement hole 201 faces the central axis direction of the gas distribution plate 10, so as to better supplement the second gas to the central area. Optionally, the inclination angles of the plurality of second gas central air supplement holes 201 are such that the intersection of the center line of the inclined hole and the bottom surface just falls on the center line of the interval area 103.

[0056] As Figure 3As shown, each of the first gas delivery channels 100 and each of the second gas delivery channels 200 are non - communicating C - shaped grooves. Due to the need for rapid exhaust, the first gas delivery channel 100 and the second gas delivery channel 200 are respectively connected to their respective external low - pressure sources (not shown in the figure). To further increase the exhaust speed and enable each delivery gas to have a continuous path from inlet to outlet, thus achieving faster exhaust, each of the first gas delivery channels 100 and each of the second gas delivery channels 200 are non - communicating C - shaped grooves. Adjacent first gas delivery channels 100 are connected by a first gas communication channel 120, and adjacent second gas delivery channels 200 are connected by a second gas communication channel 220.

[0057] A number of first partition plates 110, each of the first partition plates 110 is disposed within the corresponding first gas delivery channel 100. In this embodiment or some other embodiments, the first partition plate 110 may be integrally provided with the first gas delivery channel 100. A number of second partition plates 210, each of the second partition plates 210 is disposed within the corresponding second gas delivery channel 200. In this embodiment or some other embodiments, the second partition plate 210 may be integrally provided with the second gas delivery channel 200. In some embodiments, the first gas communication channel 120 may be disposed in the vertical direction of the first partition plate, and the second gas communication channel 220 may be disposed in the vertical direction of the second partition plate 210.

[0058] Please continue to refer to Figure 3 As shown, a plurality of first gas supply holes 104, the inlet of each of the first gas supply holes 104 is located within the first gas delivery channel 100 and is disposed close to the first partition plate 110; the outlet of each of the first gas supply holes 104 is located on the spacer region 103 and is disposed close to the intersection between the first partition plate 110 and the spacer region 103 to supply the first gas to the region where the corresponding second gas delivery channel 200 is located.

[0059] A plurality of second gas replenishing holes 202, the inlet of each second gas replenishing hole 202 is located in the second gas delivery channel 200 and is disposed close to the second partition plate 210; the outlet of each second gas replenishing hole 202 is located on the spacer 103 and is disposed close to the intersection between the second partition plate 210 and the spacer 103, so as to replenish the second gas to the area where the corresponding first gas delivery channel 100 is located. The arrangement of the first gas replenishing holes 104 and / or the second gas replenishing holes 202 can solve the problem in the prior art that due to the presence of the first partition plate 10 and / or the second partition plate 210, the area where this partition plate is located cannot be provided with first gas holes or second gas holes, that is, there is a problem of missing holes, and further cause the problem that the gas-phase precursor is unevenly distributed in this area.

[0060] Please continue to refer to Figure 3 as shown, the outlet of each first gas replenishing hole 104 is located between the outlets of two second gas holes (which can be referred to the reference numeral 205 shown in Figure 3 ) on the corresponding second gas delivery channel 200.

[0061] The outlet of each second gas replenishing hole 202 is located between the outlets of two first gas holes (which can be referred to the reference numeral 102 shown in Figure 3 ) on the corresponding first gas delivery channel 100.

[0062] It can be understood that the outlets of all types of pores involved in this embodiment are opened on the corresponding spacer 103. Thus, it can be considered that the outlet of each first gas replenishing hole 104 is located between the outlets of two second gas holes (which can be referred to the reference numeral 205 shown in Figure 3 ) on the spacer 103. It can be considered that the outlet of each second gas replenishing hole 202 is located between the outlets of two first gas holes (which can be referred to the reference numeral 102 shown in Figure 3 ) on the spacer 103.

[0063] In some embodiments, the distance between the outlet of each first gas replenishing hole 104 and the outlets of two adjacent second gas holes (which can be referred to the reference numeral 205 shown in Figure 3 ) is equal.

[0064] The distance between the outlet of each second gas replenishing hole 202 and the outlets of two adjacent first gas holes (which can be referred to the reference numeral 102 shown in Figure 3 ) is equal. This arrangement can make the gas-phase precursor more evenly distributed in this area.

[0065] Please continue to refer toFigure 3 As shown, in this embodiment or some other embodiments, the outlet directions of each of the first gas supply holes 104 and the second gas supply holes 202 do not face the central axis of the gas distribution plate 10. Optionally, the included angle between the inclination direction of the first gas supply hole 104 or the second gas supply hole 202 and the vertical direction is less than 45°.

[0066] Please continue to refer to Figure 4 As shown, the included angle β1 between the inclination direction of the second central gas supply hole 201 and the vertical direction is 30° to 60°.

[0067] Please continue to refer to Figure 4 As shown, the first gas hole (such as Figure 4 indicated by reference numeral 101 or 102) or the second gas hole (such as Figure 2 indicated by reference numeral 203) has an included angle β with the vertical direction of 10° to 30°. The arrangement of all types of inclined and staggered holes can avoid the phenomenon of gas curtain generated due to the vertical arrangement of the holes, which is not conducive to the uniform distribution of various gases on the surface of the reaction chamber or the substrate.

[0068] In this embodiment or some other embodiments, please continue to refer to Figure 3 As shown, the first inlet end connected to the first delivery channel 100 is used to deliver the first gas into the first delivery channel 100. A first low-pressure source ( Figure 3 not shown in the figure) is connected to the first outlet end of the first delivery channel 100 and is used to provide a low pressure at the first outlet end. The second inlet end connected to the second delivery channel 200 is used to deliver the second gas into the second delivery channel 200. A second low-pressure source ( Figure 3 not shown in the figure) is connected to the second outlet end of the second delivery channel 200 and is used to provide a low pressure at the second outlet end. It can be understood that in some embodiments, the first low-pressure source and the second low-pressure source may be air extraction pumps.

[0069] Such as Figure 5 As shown, this embodiment further provides a chemical vapor deposition device, including: a reaction chamber 50; a base 51 disposed at the inner bottom of the reaction chamber 50 for supporting a substrate 53; a gas shower head 52 having the gas distribution plate 10 as described in the above embodiment, the gas shower head 52 is disposed at the top of the reaction chamber 50 and is disposed opposite to the base 51 for providing reaction gases to the surface of the substrate 53. Thus, it is possible to provide a variety of reaction gases uniformly to the surface of the substrate 53.

[0070] On the other hand, this embodiment further provides a method for using a chemical vapor deposition device, including:

[0071] Step a: Introduce a first gas into the first conveying channel, and the second low-pressure source is in a closed state.

[0072] Step b: Stop introducing the first gas, introduce a purge gas into the first conveying channel, and the first low-pressure source is in an open state.

[0073] Step c: Close the first low-pressure source, and introduce a second gas into the second conveying channel.

[0074] Through a plurality of second gas central supply holes spaced apart on the second gas conveying channel adjacent to the first gas conveying channel located at the center of the gas distribution plate, the second gas is supplemented to the central region below the first gas conveying channel located at the center of the gas distribution plate.

[0075] Step d: Stop introducing the second gas, introduce a purge gas into the second conveying channel, and the second low-pressure source is in an open state. Repeat steps a to d.

[0076] It can be seen that while introducing a purge gas into the first or second conveying channel and evacuating, the residual reaction gas in the first / second conveying channel can be quickly removed to prevent the two reaction gases from reacting and generating deposits in the gas spray head. Also, when introducing the corresponding reaction gas into the first / second conveying channel, through the provided plurality of second gas central supply holes, the second gas can be supplemented to the central region below the first gas conveying channel located at the center of the gas distribution plate. And / or, by providing a plurality of the first gas supply holes and the second gas supply holes, the area where the first partition plate or the second partition plate is located (or the area where the skip holes exist) is supplemented with gas, thereby further improving the distribution uniformity of various reaction gases on the surface of the substrate.

[0077] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of another identical element in the process, method, article or device including the element.

[0078] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by terms such as "center", "height", "thickness", "upper", "lower", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present invention. In the description of the present invention, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0079] In the description of the present invention, unless otherwise clearly defined and limited, the terms "mounted", "connected", "coupled", "fixed" shall be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral body; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0080] In the present invention, unless otherwise clearly defined and limited, the first feature being "on" or "under" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through other features therebetween. Moreover, the first feature being "above", "over" and "on top of" the second feature includes that the first feature is directly above and obliquely above the second feature, or merely indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature includes that the first feature is directly below and obliquely below the second feature, or merely indicates that the horizontal height of the first feature is lower than that of the second feature.

[0081] Although the content of the present invention has been introduced in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation to the present invention. After those skilled in the art have read the above content, various modifications and substitutions to the present invention will be obvious. Therefore, the protection scope of the present invention should be defined by the appended claims.

Claims

1. A gas spray head, characterized in that, include: A gas distribution plate, wherein the gas distribution plate is provided with a gas delivery channel, wherein the gas delivery channel comprises a plurality of first delivery channels for delivering a first gas and a plurality of second delivery channels for delivering a second gas, wherein the plurality of first delivery channels and the plurality of second delivery channels are alternately arranged and concentrically disposed with each other; A plurality of first gas pores are spaced apart and distributed on the first delivery channel, A plurality of second gas holes are spaced apart and distributed on the second delivery channel, wherein the first gas holes and the second gas holes are used to supply the first gas and the second gas to the surface of the substrate to be processed; The first gas delivery channel located at the center of the gas distribution plate is a central first gas delivery channel, and the second gas delivery channel adjacent to the central first gas delivery channel is a central second gas delivery channel; A plurality of second gas central gas supply holes, wherein the inlets of the plurality of second gas central gas supply holes are arranged on the central second gas delivery channel, and the outlets of the plurality of second gas central gas supply holes are spaced apart and distributed between the two first gas holes of the central first gas delivery channel, for replenishing the second gas to the lower central area of ​​the gas distribution plate.

2. The gas spray head according to claim 1, characterized in that, There is a spacing area between the first conveying channel and the second conveying channel; The outlets of a plurality of the second gas central gas replenishing holes are spaced apart and distributed in the spaced area between the central first delivery channel and the central second delivery channel, so as to replenish the second gas to the central area below the gas distribution plate.

3. The gas spray head according to claim 2, characterized in that, The gas outlet direction of each of the second gas central gas supply holes is toward the central axis of the gas distribution plate.

4. The gas spray head according to claim 3, characterized in that, The distance between the outlet of each of the second gas central gas supplement holes and the outlets of two adjacent first gas holes is equal.

5. The gas spray head according to claim 4, characterized in that, The angle between the inclined direction of each of the second gas central gas supply holes and the vertical direction is in the range of 30° to 60°.

6. The gas spray head according to claim 2, characterized in that, The gas shower head further comprises: a cover plate, which covers the gas distribution plate, and a gas communication channel is provided on the cover plate The gas communication passage comprises a plurality of first gas communication passages and a plurality of second gas communication passages; The first gas communication channel crosses the second delivery channel to communicate with two adjacent first delivery channels; The second gas communication channel crosses the first delivery channel to communicate with two adjacent second delivery channels.

7. The gas spray head according to claim 6, characterized in that, Each of the first gas delivery channels and each of the second gas delivery channels are non-connected C-shaped grooves; A plurality of first partition plates, each of which is disposed in a corresponding first gas delivery channel; A plurality of second partition plates, each of which is disposed in a corresponding second gas delivery channel; A plurality of first gas replenishing holes, wherein the inlet of each first gas replenishing hole is located on the first gas delivery channel and is arranged close to the first partition plate; the outlet of each first gas replenishing hole is located on the spacer area and is arranged close to the intersection between the first partition plate and the spacer area, so as to replenish the first gas to the area where the corresponding second gas delivery channel is located; A plurality of second gas supply holes, the inlet of each of the second gas supply holes is located on the second gas delivery channel and is disposed close to the second partition plate; the outlet of each of the second gas supply holes is located on the spacer area and is disposed close to the intersection between the second partition plate and the spacer area, so as to supply the second gas to the area where the corresponding first gas delivery channel is located.

8. The gas spray head according to claim 7, characterized in that, The outlet of each of the first gas supply holes is located between the outlets of two of the second gas holes on the corresponding second gas delivery channel; The outlet of each of the second gas supply holes is located between the outlets of two of the first gas holes on the corresponding first gas delivery channel.

9. The gas spray head according to claim 8, characterized in that, The distance between the outlet of each of the first gas supply holes and the outlets of two adjacent second gas holes is equal; The distance between the outlet of each of the second gas supply holes and the outlets of two adjacent first gas holes is equal.

10. The gas spray head according to claim 9, characterized in that, The gas outlet direction of each of the first gas supply holes and the second gas supply holes does not face the central axis of the gas distribution plate.

11. The gas spray head according to claim 10, characterized in that, The included angle between the inclination direction of the first gas supply hole or the second gas supply hole and the vertical direction is less than 45°.

12. The gas spray head according to claim 2, characterized in that, The included angle between the inclination direction of the first gas hole or the second gas hole and the vertical direction is 10° to 30°.

13. The gas showerhead according to claim 2, wherein, Two circles of the first gas holes are provided on the central first gas delivery channel, wherein the inlet of one circle of the first gas holes is disposed close to the inner ring side wall of the first gas delivery channel; the inlet of the other circle of the first gas holes is disposed close to the outer ring side wall of the first gas delivery channel; One circle of the second gas holes is further provided on the central second gas delivery channel, and the inlet of the second gas holes is disposed close to the outer ring side wall of the second gas delivery channel.

14. The gas showerhead according to claim 2, wherein, A first inlet end communicating with the first delivery channel, for delivering a first gas into the first delivery channel; A first low-pressure source, communicating with the first outlet end of the first delivery channel, for providing a low pressure at the first outlet end; A second inlet end communicating with the second delivery channel, for delivering a second gas into the second delivery channel; A second low-pressure source, communicating with the second outlet end of the second delivery channel, for providing a low pressure at the second outlet end.

15. A chemical vapor deposition apparatus, wherein, Comprising: A reaction chamber; A susceptor, which is disposed at the inner bottom of the reaction chamber and is used for supporting a substrate; The gas showerhead according to any one of claims 1 to 14, wherein the gas showerhead is disposed at the top of the reaction chamber and is disposed opposite to the susceptor, for providing reaction gases to the surface of the substrate.

16. A method of using the chemical vapor deposition apparatus according to claim 15, wherein, Comprising: Step a, introducing a first gas into the first delivery channel, and the second low-pressure source is in a closed state; Step b, stopping introducing the first gas, introducing a purge gas into the first delivery channel, and the first low-pressure source is in an open state; Step c, closing the first low-pressure source, and introducing a second gas into the second delivery channel; The second gas is supplemented to the lower central region of the first gas delivery channel located at the center of the gas distribution plate through a plurality of second gas central supply holes spaced apart on the second gas delivery channel adjacent to the first gas delivery channel located at the center of the gas distribution plate; Step d: Stop introducing the second gas, introduce a purge gas into the second delivery channel, and the second low-pressure source is in an open state; Repeat steps a to d.

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