Graphical developing equipment for thin-line-width electrode grid line

Abstract

The invention provides a thin-line-width electrode grid line graphical developing device and a developing method, the developing device comprises two developing sections and a conveying mechanism, and at least one of the two developing sections is provided with a multifunctional developing groove. The multifunctional developing tank comprises an infiltration mechanism and a spraying mechanism; the infiltration mechanism comprises a liquid inlet, a first overflow port, a second overflow port, a third overflow port and an infiltration pipeline; the spraying mechanism comprises a nozzle, supporting frames with different heights and distances, a spraying pipeline and a mounting base. The developing method provided by the invention comprises the steps of soaking and then spraying. The two independent developing sections and the multifunctional developing tank are arranged, and the structure of the developing tank is improved, so that efficient synergy of multiple functions is realized, a developing solution can reach the bottom of a grid line groove more easily, photoresist residues are avoided, and the problem of unclean development is solved; and meanwhile, the development requirements of different silicon wafers and different parts of the silicon wafers can be met, and the graphical development effect of the thin-line-width electrode grid line is improved.

Description

Technical Field

[0001] The present invention belongs to the fields of solar cells and semiconductor manufacturing, and particularly relates to a fine-line-width electrode grid line patterning and developing device. Background Art

[0002] In the field of solar cell manufacturing, the process of forming electrodes on the surface of silicon wafers mainly includes: coating photosensitive resin on the N side and P side of the silicon wafers respectively. After curing the photosensitive resin, an electrode patterning device is used to selectively expose the N side and P side of the silicon wafers respectively to form electrode patterns. Then, the photosensitive resin in the areas corresponding to the electrode patterns is removed in a developing device, so that the metal layers in the areas corresponding to the electrode patterns on the surface of the silicon wafers are exposed. Then, the exposed metal layers are electroplated to increase the thickness to form electrodes. When the height is constant, due to the reason of the light-shielding area, too wide electrode grid lines will seriously reduce the photoelectric conversion efficiency. Therefore, the grid line width can be reduced to reduce the light-shielding area to improve the photoelectric conversion efficiency of the battery. As the line width of the electroplated metal grid lines is continuously reduced, new challenges are also posed to the developing device.

[0003] In the prior art, conventional developing devices usually adopt the methods of spray developing or immersion developing. There are generally problems of unclean developing during fine-line-width developing, that is, there is still photosensitive resin residue at the bottom of the grid line grooves after the silicon wafers are developed. At present, the main solutions are to use excessive developing solution or extend the developing time of the silicon wafers, but the effect is not thorough and it cannot be completely removed; there is also a method of increasing the spray pressure of the developing device, which is likely to cause the bottom of the silicon wafer to be lifted or the grooves at the top of the grid lines to be washed away, thus bringing new problems to the subsequent electroplating process, and at the same time, the applicability is poor and it cannot well meet the developing requirements of different silicon wafers; there are also some methods of adjusting the developing temperature, developing solution concentration, etc., which will inevitably bring new problems, resulting in poor developing effect and a large increase in cost. Summary of the Invention

[0004] To solve the above technical problems, the present invention provides a fine-line-width electrode grid line patterning and developing device and a developing method. By improving the structure of the developing device and the developing method, the problem of unclean developing of fine-line-width electrode grid lines is solved; at the same time, it can more flexibly adapt to the different developing requirements of different silicon wafers.

[0005] The technical solution adopted by the present invention is as follows:

[0006] A fine-line-width electrode grid line patterning and developing device for pattern-developing a silicon wafer, comprising: two developing sections, each provided with an independent developing tank and a control system, and at least one of the two developing sections is provided with a multi-functional developing tank; the multi-functional developing tank can perform immersion developing and spray developing simultaneously; a conveying mechanism, which connects the two developing sections and conveys the silicon wafer from one developing section to the other developing section.

[0007] Further, the multi-functional developing tank is provided with a soaking mechanism and a spraying mechanism, which are respectively connected to a storage tank storing developing solution through a soaking pipeline and a spraying pipeline.

[0008] Further, the soaking mechanism includes a liquid inlet, a first overflow port, a second overflow port, and a third overflow port that are arranged in sequence from top to bottom, and are respectively connected to the soaking pipeline;

[0009] The height of the first overflow port is matched with the height of the silicon wafer, so that the liquid level height of the developing solution is higher than the upper surface of the silicon wafer;

[0010] The height of the second overflow port is matched with the height of the silicon wafer, so that the liquid level height of the developing solution is between the upper surface and the lower surface of the silicon wafer.

[0011] The third overflow port is arranged at the bottom of the multi-functional developing tank and is used to make the developing solution in the multi-functional developing tank flow back to the storage tank.

[0012] Further, the spraying mechanism includes nozzles symmetrically arranged above and below the silicon wafer, and the distances between the nozzles and the silicon wafer are different; the nozzles are respectively detachably connected to the spraying pipeline.

[0013] Further, one end of the spraying pipeline close to the nozzle is detachably connected to a support frame, and the support frame has different heights and is detachably arranged on a mounting seat.

[0014] Further, the height of the support frame is 10 - 150 mm; the distance between the nozzle and the silicon wafer is 20 - 150 mm.

[0015] Further, the spraying pipeline is provided with an independent flow meter and a flow regulating valve; the soaking pipeline is provided with an independent switch valve; both the flow regulating valve and the switch valve are connected to the control system.

[0016] Further, the conveying mechanism includes a plurality of conveying tracks, and the mounting seats are uniformly arranged along the direction perpendicular to the running direction of the conveying tracks; the support frames with different heights are arranged on the same mounting seat.

[0017] Further, several spraying pipelines form a spraying unit for spraying the silicon wafers on the same conveying track; in the spraying unit, the distances between the support frames of adjacent mounting seats are different, so that the nozzles of adjacent mounting seats spray different parts of the silicon wafers respectively.

[0018] A developing method for a fine-line-width electrode grid line pattern uses the above-mentioned developing equipment for the fine-line-width electrode grid line pattern, places a silicon wafer in one of the developing sections for infiltration, and then transfers the silicon wafer to another developing section through a transfer mechanism for spraying.

[0019] The beneficial effects of the present invention are as follows:

[0020] 1. By setting two independent developing sections and a multi-functional developing tank, different developing processes can be selected according to the developing requirements of different silicon wafers, making it more flexible to use and having a wider application range. At the same time, a developing process is realized in which the silicon wafer is infiltrated in one developing section, undergoes a swelling reaction fully, and then is transferred to another developing section through a transfer mechanism for spraying. This makes the developing solution more easily reach the bottom of the grid line groove, avoids the residue of the photosensitive glue, and improves the developing effect of the fine-line-width electrode grid line pattern.

[0021] 2. Through the improvement of the structure of the developing tank, overflow ports with different heights are set to maintain different liquid levels, enabling the developing tank to have functions of single-sided infiltration, double-sided infiltration, and spraying at the same time.

[0022] 3. By designing the support frame to have different heights and controlling the distance between the nozzle and the silicon wafer, the adjustment of different spraying heights and spraying densities is realized. At the same time, the installation distance between the support frames is controlled to make the spraying effect on the electrode grid lines in different parts better, so as to meet the spraying requirements of the fine-line-width electrode grid lines.

[0023] 4. The various functions of the equipment are efficiently coordinated. Based on the developing method of infiltration first and then spraying, with flexible configurations of different infiltration methods, different nozzle heights, different nozzle distances, and different spraying densities, a good developing effect of the fine-line-width electrode grid line pattern is achieved. At the same time, it is convenient to use, more targeted, and more flexible. It can also be used for the pattern developing of ordinary silicon wafers, and has a wider application range. Description of the Drawings

[0024] Figure 1 is a schematic structural diagram of the developing equipment of a specific embodiment of the present invention;

[0025] Figure 2 is a schematic structural diagram of the multi-functional developing tank of a specific embodiment of the present invention;

[0026] Figure 3 is a schematic structural diagram of the support frame of a specific embodiment of the present invention;

[0027] Figure 4 is a schematic diagram of the mounting seat and the spraying unit of a specific embodiment of the present invention;

[0028] Figure 5Schematic diagram of the nozzle mounting structure of a specific embodiment of the present invention;

[0029] Figure 6 Schematic diagram of the use of the nozzle of a specific embodiment of the present invention;

[0030] Figure 7 Schematic diagram of the use of the nozzle of a specific embodiment of the present invention.

[0031] In the figure:

[0032] 1. Multifunctional developing tank 2. Infiltration mechanism 201. Liquid inlet

[0033] 202. First overflow port 203. Second overflow port 204. Third overflow port

[0034] 3. Spraying mechanism 301. Nozzle 302. Support frame

[0035] 303. Spraying pipeline 304. Mounting seat 4. Storage tank

[0036] 5. Silicon wafer 6. Spraying unit 7. Developing section

[0037] 701. Developing tank 8. Conveying mechanism Specific embodiments

[0038] The embodiments of the present invention will be described below with reference to the accompanying drawings.

[0039] First, it should be noted that all directional indications (such as up, down, left, right, front, back...) in the embodiments of the present application are only used to explain the relative position relationship and movement conditions between components in a specific posture (as shown in the drawings). If the specific posture changes, the directional indications will also change accordingly.

[0040] The drawings in this specification are schematic diagrams, which assist in explaining the concept of the present invention and schematically show the shapes of various parts and their mutual relationships. Please note that in order to clearly show the structures of the components in the embodiments of the present invention, the drawings are not drawn according to the same scale. The same reference numerals are used to represent the same parts.

[0041] In the present application, unless otherwise clearly defined and limited, the terms "connection", "fixation", etc. should be understood in a broad sense. For example, "fixation" can be a fixed connection, a detachable connection, or an integral body; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and can be the internal communication of two components or the interaction relationship between two components, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0042] In addition, the descriptions involving "first", "second", etc. in the application are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one such feature.

[0043] The inventors of the present application have found through research that the direct cause of unclean development lies in the "pool effect". When the required electroplating line width is less than 20 μm and spray development is carried out, the fresh developer is sprayed onto the surface of the silicon wafer and is blocked by the original developer already covering the surface of the battery, unable to come into full contact with the photosensitive resin on the silicon wafer surface to complete the swelling reaction, making it difficult to remove the photosensitive resin under spraying. On the other hand, the grooves on the silicon wafer surface are extremely narrow, and it is difficult for the developer to effectively react continuously with the photosensitive resin in the groove part to the bottom of the battery, resulting in the residue of the photosensitive resin at the bottom of the groove, causing a huge adverse impact on the product quality and possibly directly invalidating the electrical performance of the silicon wafer.

[0044] As Figure 1 shown, in the first aspect of the present invention, a fine line width electrode grid line patterning development device is proposed for patterning development of a silicon wafer, including two development sections 7 and a transfer mechanism 8. Each of the two development sections 7 is provided with an independent development tank 701 and a control system (not shown). One of the two development sections 7 is provided with a multi-functional development tank 1; the multi-functional development tank 1 can perform immersion development and spray development simultaneously; the transfer mechanism 8 connects the two development sections 7 and transfers the silicon wafer 5 from one development section 7 to the other development section 7.

[0045] In this embodiment, the two development sections 7 are provided with different developer concentrations, development temperatures, and development pressures. The development tank 701 of one of the development sections 7 is a multi-functional development tank 1; the development tank 701 of the other development section 7 is a spray development tank. During the development process, the silicon wafer 5 is immersed in the multi-functional development tank 701 of one development section 7, enabling the silicon wafer 5 to come into full contact with the developer to complete the swelling reaction. Then, the silicon wafer 5 is transferred to the development tank 701 of the other development section 7 through the transfer mechanism 8 for spraying, making it easier for the developer to reach the bottom of the grid line groove, avoiding the residue of the photosensitive resin, improving the patterning development effect of the fine line width electrode grid line; at the same time, silicon wafers can be developed in batches, ensuring the continuity of the development process and improving the development efficiency.

[0046] In another embodiment of the present invention, the two developing segments 7 are provided with different developing solution concentrations, developing temperatures, and developing pressures. The developing tank 701 of one developing segment 7 is a multi-functional developing tank 1; the developing tank 701 of the other developing segment 7 is an immersion developing tank. During the developing process, the silicon wafer 5 is immersed in the developing tank 701 of one developing segment 7, so that the silicon wafer 5 can be fully contacted with the developing solution for swelling reaction. Then, the silicon wafer 5 is transferred to the multi-functional developing tank 1 of the other developing segment 7 through the transfer mechanism 8 for spraying, making it easier for the developing solution to reach the bottom of the gate line groove, avoiding the residue of the photosensitive resin, and improving the patterning developing effect of the fine line-width electrode gate line.

[0047] In other embodiments of the present invention, the two developing segments 7 are both provided with multi-functional developing tanks 1; the number of multi-functional developing tanks 1 in each developing segment 7 can be one or more.

[0048] By providing two independent developing segments 7, different requirements of the silicon wafer 5 for developing methods, developing solution concentrations, developing humidity, and developing pressures can be met. The developing segment 7 can perform immersion developing or spraying developing in the prior art. By providing the transfer mechanism 8, the developing equipment can realize the secondary developing method of first immersion and then spraying, achieving a better developing effect.

[0049] In order to realize the immersion and spraying functions of the multi-functional developing tank 1, in a preferred embodiment, as Figure 2 shown, the multi-functional developing tank 1 adopts the following design: The multi-functional developing tank 1 is provided with an immersion mechanism 2 and a spraying mechanism 3, which are respectively connected to the storage tank 4 for storing the developing solution through an immersion pipeline (not shown) and a spraying pipeline 303.

[0050] In this embodiment, the storage tank 4 is arranged at the lower part of the developing tank 701; in some other embodiments of the present invention, the storage tank 4 is arranged at other positions.

[0051] The requirements for patterning development of different silicon wafers are different. For example, some silicon wafers need to perform patterning development on the opposite surfaces on both sides, and some other silicon wafers need to perform patterning development on one surface. In order to better realize the single-sided immersion or double-sided immersion of silicon wafers with different developing methods, in a specific embodiment, as Figure 2 shown, the design of the immersion mechanism 2 is as follows: The immersion mechanism 2 includes a liquid inlet 201, a first overflow port 202, a second overflow port 203, and a third overflow port 204 arranged in sequence from top to bottom, and are respectively connected to the immersion pipeline;

[0052] The height of the first overflow port 202 is matched with the height of the silicon wafer 5, so that the developing solution above the first overflow port 202 naturally flows out through the first overflow port 202 and returns to the storage tank 4; thus, the liquid level height of the developing solution is higher than the upper surface of the silicon wafer 5, and the double-sided immersion of the silicon wafer 5 is completed.

[0053] The height of the second overflow port 203 is matched with the height of the silicon wafer 5, so that the developer solution above the second overflow port 203 naturally flows out through the second overflow port 203 and returns to the storage tank 4; thus, the liquid level height of the developer solution is located between the upper surface and the lower surface of the silicon wafer 5, and the single-sided wetting of the lower surface of the silicon wafer 5 is completed.

[0054] The third overflow port 204 is arranged at the bottom of the multi-functional developing tank 1 and is used to return the developer solution inside the multi-functional developing tank 1 to the storage tank 4; this part of the developer solution can be the developer solution remaining from spray developing or the developer solution remaining from immersion developing.

[0055] In this embodiment, when the single-sided wetting function is turned on, the first overflow port 202 and the third overflow port 204 are closed, and the liquid inlet 201 and the second overflow port 203 are opened, so that the liquid level height of the developer solution in the multi-functional developing tank 1 is always maintained between the upper surface and the lower surface of the silicon wafer 5.

[0056] In this embodiment, when the double-sided wetting function is turned on, the second overflow port 203 and the third overflow port 204 are closed, and the liquid inlet 201 and the first overflow port 202 are opened, so that the liquid level height of the developer solution in the multi-functional developing tank 1 is always maintained above the upper surface of the silicon wafer 5.

[0057] When the developing is completed, the third overflow port 204 is opened to drain all the developer solution in the multi-functional developing tank 1.

[0058] In this embodiment, the liquid inlet 201 is set to one, and the first overflow port 202, the second overflow port 203 and the third overflow port 204 are respectively two, and are dispersedly arranged on the side wall of the multi-functional developing tank 1.

[0059] In other embodiments of the present invention, the liquid inlet 201, the first overflow port 202, the second overflow port 203 and the third overflow port 204 can be set to one or more according to needs.

[0060] In order to achieve a better spray developing effect, in a preferred embodiment of the present invention, as Figure 3 shown, the spray mechanism 3 is designed as follows: The spray mechanism 3 includes a nozzle 301, a support frame 302, a spray pipeline 303 and a mounting seat 304; the nozzles 301 are symmetrically arranged above and below the silicon wafer 5 to realize the spraying on the upper surface or the lower surface of the silicon wafer 5; the nozzles 301 are respectively detachably connected to the spray pipeline 303. One end of the spray pipeline 303 close to the nozzle 301 is detachably connected to the support frame 302, and the support frame 302 has different heights, so that the distance between the nozzle 301 and the silicon wafer 5 is different; the support frame 302 is detachably arranged on the mounting seat 304.

[0061] In this embodiment, the nozzle 301, the support frame 302, and the spray pipeline 303 are arranged in one-to-one correspondence. A plurality of support frames 302 are arranged on the same mounting base 304. Specifically, the mounting base 304 is provided with a number of card slots. One end of the support frame 302 is clamped in the card slot, and the other end is provided with an arc-shaped card slot that matches the shape of the spray pipeline 303 to clamp the spray pipeline 303 tightly. The mounting base 304 is respectively installed above and below the silicon wafer 5, so that its card slots face upward or downward respectively. Furthermore, the support frame 302 extends in the direction close to the silicon wafer 5, and the nozzle 301 faces the upper surface or the lower surface of the silicon wafer 5.

[0062] In this embodiment, the heights of the support frames 302 are 20 mm, 60 mm, and 150 mm respectively; in some other embodiments of the present invention, the height of the support frame 302 can be preferably set to 10 - 150 mm; the distance between the nozzle and the silicon wafer can be preferably set to 20 - 150 mm.

[0063] According to the development requirements of the silicon wafer 5, support frames 302 with different heights can be selectively installed and the support frames 302 can be arranged at different positions on the mounting base 304 to meet the requirements of different spray heights and spray densities. For example, when the photosensitive resin on the silicon wafer 5 needs a greater impact force to be removed, a support frame 302 with a smaller height is selected, so that the developing solution can reach the bottom of the electrode grid line groove and remove the residual photosensitive resin in the groove.

[0064] In a preferred embodiment, in order to better control the spray operation and the infiltration operation, the spray pipeline 303 is provided with an independent flow meter and a flow regulating valve. Through more precise adjustment, different requirements of different silicon wafers 5 for the spray pressure are realized; the infiltration pipeline is provided with an independent switch valve for controlling the liquid inlet 201, the first overflow port 202, the second overflow port 203, and the third overflow port 204; the flow regulating valve and the switch valve are both connected to the control system, which is convenient for the operator to operate.

[0065] In a specific embodiment, as Figures 4 - 5 shown, the conveying mechanism 8 includes a plurality of conveying tracks (not shown), and the mounting bases 304 are uniformly arranged along the direction perpendicular to the running direction of the conveying tracks; the same mounting base 304 is provided with support frames 302 of different heights. According to the spray requirements of different silicon wafers 5, support frames 302 of different heights are selectively installed above and below the conveying track where the silicon wafer 5 is located to set the distance between the nozzle 301 and the silicon wafer 5 and meet the requirements of the silicon wafer 5 for the spray height and spray density.

[0066] In this embodiment, a number of spray pipelines 303 form a spray unit 6 for spraying the silicon wafers 5 on the same conveying track; in the spray unit 6, the distances between the support frames 302 of adjacent mounting bases 304 are different, so that the nozzles 301 of adjacent mounting bases 304 spray different parts of the silicon wafer 5 respectively.

[0067] In this embodiment, as Figure 4 shown, the distance a between the nozzles 301 is 50 mm, the distance b between the nozzles 301 is 70 mm, and they are arranged at intervals along the running direction of the conveying track. Since the part of the silicon wafer 5 closer to the nozzle 301 receives a greater impact force, the nozzle 301 with a distance a of 50 mm focuses on spraying the middle part of the silicon wafer 5, and the nozzle 301 with a distance b of 70 mm focuses on spraying the opposite sides of the silicon wafer 5. During the process of the silicon wafer 5 running on the conveying track, it successively passes through the nozzle 301 with a distance a and the nozzle 301 with a distance b, and different parts are alternately sprayed to achieve a better spraying effect.

[0068] In other embodiments of the present invention, the distance between the nozzles 301 can be set according to actual needs.

[0069] Furthermore, in this embodiment, as Figures 5 - 7 shown, according to the spraying angle and spraying height requirements for the development of the silicon wafer 5, the nozzles 301 are installed in different spraying pipelines 302, and other spraying pipelines 303 are blocked, thus avoiding interference between different spraying units 6 or between different nozzles 301 of the same spraying unit 6, as well as problems such as repeated spraying of the same position of the silicon wafer 5 by different nozzles 301, which may damage the opening of the electrode grid line groove and result in low development efficiency.

[0070] As Figure 6 shown, three spraying pipelines 303 are provided on the same mounting seat 304 of the same spraying unit 6. The nozzles 301 are installed on the spraying pipelines 303 located on both sides, with a distance of 30 mm from the silicon wafer 5. The angle of the nozzles 301 is 90°, and the nozzles 301 rotate clockwise by 30° along the direction of the spraying pipeline 303, achieving a good development effect.

[0071] In a specific embodiment, as Figure 7 shown, three spraying pipelines 303 are provided on the same mounting seat 304 of the same spraying unit 6. The nozzles 301 are installed on the spraying pipeline 303 located in the middle, with a distance of 40 mm from the silicon wafer 5. The angle of the nozzles 301 is 110°, and the nozzles 301 rotate clockwise by 24° along the direction of the spraying pipeline 303, achieving a good development effect.

[0072] In some other embodiments of the present invention, 3 - 5 spraying pipelines 303 are provided on the same mounting seat 304 of the same spraying unit 6.

[0073] In the second aspect of the present invention, a development method for patterning a fine-line-width electrode gate line is proposed. By using the development equipment for patterning a fine-line-width electrode gate line proposed by the present invention, the silicon wafer 5 is placed in one of the development segments 7 for infiltration, so that the silicon wafer 5 can be in full contact with the developer for swelling reaction. Then, the silicon wafer 5 is transferred to another development segment 7 by the transfer mechanism 8 for spraying, making it easier for the developer to reach the bottom of the electrode gate line groove, avoiding the residue of the photosensitive resin, and improving the development effect of patterning the fine-line-width electrode gate line.

[0074] By setting two independent development segments and a multi-functional development tank, the present invention can select different development processes according to the development requirements of different silicon wafers, and realizes the development process of infiltration in one development segment to allow the silicon wafer to undergo a full swelling reaction, and then the silicon wafer is transferred to another development segment by the transfer mechanism for spraying, making it easier for the developer to reach the bottom of the gate line groove, avoiding the residue of the photosensitive resin, and improving the development effect of patterning the fine-line-width electrode gate line. At the same time, through the improvement of the structure of the development tank, overflow ports with different heights are set to maintain different liquid levels, enabling the development tank to have single-sided infiltration, double-sided infiltration, and spraying functions at the same time. By designing the support frame to have different heights and controlling the distance between the nozzle and the silicon wafer, the adjustment of different spraying heights and spraying densities is realized. At the same time, the installation distance between the support frames is controlled to achieve a better spraying effect on the electrode gate lines in different parts, better meeting the different spraying requirements of the fine-line-width electrode gate lines. The various functions of the equipment are efficiently coordinated. Based on the development method of infiltration first and then spraying, with flexible configurations of different infiltration methods, different nozzle heights, different nozzle distances, and different spraying densities, a good development effect of patterning the fine-line-width electrode gate line is achieved. At the same time, it is convenient to use, more targeted, and more flexible, and can also be used for the patterning development of ordinary silicon wafers, with a wider scope of application.

[0075] The above has described the embodiments of the present invention in detail, but the content described is only the preferred embodiments of the present invention and cannot be considered as limiting the scope of implementation of the present invention. All equivalent changes and improvements made according to the scope of the application of the present invention should still fall within the scope covered by the patent of the present invention.

Claims

1. A fine-line-width electrode grid line patterning and developing device for patterning and developing a silicon wafer, characterized in that, Comprising: Two developing segments, each provided with an independent developing tank and a control system, and at least one of the two developing segments is provided with a multi-functional developing tank; The multi-functional developing tank is capable of performing immersion development and spray development simultaneously; A conveying mechanism, which connects the two developing segments and conveys the silicon wafer from one developing segment to the other developing segment.

2. The fine-line-width electrode grid line patterning and developing device according to claim 1, characterized in that: The multi-functional developing tank is provided with an immersion mechanism and a spray mechanism, which are respectively connected to a storage tank for storing developing solution through an immersion pipeline and a spray pipeline.

3. The fine-line-width electrode grid line patterning and developing device according to claim 2, characterized in that: The immersion mechanism includes a liquid inlet, a first overflow port, a second overflow port, and a third overflow port arranged in sequence from top to bottom, and are respectively connected to the immersion pipeline; The height of the first overflow port is matched with the height of the silicon wafer, so that the liquid level height of the developing solution is higher than the upper surface of the silicon wafer; The height of the second overflow port is matched with the height of the silicon wafer, so that the liquid level height of the developing solution is between the upper surface and the lower surface of the silicon wafer; The third overflow port is arranged at the bottom of the multi-functional developing tank for returning the developing solution in the multi-functional developing tank to the storage tank.

4. The multifunctional developing tank according to claim 2 or 3, characterized in that: The spray single mechanism includes nozzles symmetrically arranged above and below the silicon wafer, and the distances between the nozzles and the silicon wafer are different; the nozzles are respectively detachably connected to the spray pipeline.

5. The multifunctional developing tank according to claim 4, characterized in that: One end of the spray pipeline close to the nozzle is detachably connected to a support frame, and the support frame has different heights and is detachably arranged on the mounting seat.

6. The multifunctional developing tank according to claim 5, characterized in that: The height of the support frame is 10 - 150 mm; the distance between the nozzle and the silicon wafer is 20 - 150 mm.

7. The multifunctional developing tank according to claim 2 or 6, characterized in that: The spray pipeline is provided with an independent flow meter and a flow regulating valve; the immersion pipeline is provided with an independent switch valve; both the flow regulating valve and the switch valve are connected to the control system.

8. The multifunctional developing tank according to claim 7, characterized in that: The conveying mechanism includes a plurality of conveying tracks, and the mounting seats are uniformly arranged along the direction perpendicular to the running direction of the conveying tracks; the support frames with different heights are arranged on the same mounting seat.

9. The multifunctional developing tank according to claim 8, characterized in that: Several spray pipelines form a spray unit for spraying the silicon wafers on the same conveying track; in the spray unit, the distances between the support frames of adjacent mounting seats are different, so that the nozzles of adjacent mounting seats spray different parts of the silicon wafer respectively.

10. A fine-line-width electrode grid line patterning and developing method, characterized in that: Using the fine line width electrode grid line patterning developing device according to any one of claims 1 - 9, placing the silicon wafer in one of the developing segments for immersion, and then conveying the silicon wafer to the other developing segment for spraying through the conveying mechanism.

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