Nonlinear model predictive temperature control method for semiconductor temperature control type synthesis reactor
By establishing a dynamic heat transfer model and constructing a multi-constrained nonlinear predictive control problem, and using the projection gradient descent method to solve the optimal control input, the problem that traditional PID control algorithms cannot effectively control the nonlinear system of semiconductor temperature-controlled synthesis reactors is solved, and high-precision and real-time temperature control are achieved.
Patent Information
- Application Number
- CN202510665132.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-22
- Publication Date
- 2025-06-20
- Estimated Expiration
- 2045-05-22
AI Technical Summary
Traditional PID control algorithms cannot effectively capture and compensate the nonlinear behavior of the system for the nonlinear system of semiconductor temperature-controlled synthesis reactors, resulting in unsatisfactory temperature control effect and lack of predictive ability of future system behavior.
By establishing a dynamic heat transfer model of the reactor, nonlinear predictive control problems with multiple constraints are constructed, and the projection gradient descent method is used to solve the optimal control input online to achieve accurate control and real-time adjustment of the reactor temperature.
This method achieves high precision and real-time control of reactor temperature, meets multiple constraints, is highly robust, and is suitable for high-demand chemical reaction safety testing and automated chemical process control.