Anti-counterfeiting mark design method for transparent conductive film

Abstract

The invention relates to the technical field of transparent conductive films, in particular to an anti-counterfeiting mark design method for a transparent conductive film, which comprises the following steps: S1, designing a set of coding system; s2, selecting a proper edge grid area, and drawing a plurality of lines; production information can be identified microcosmically, and several lines are additionally drawn on a part of lines when the mask plate is manufactured through codes designed in advance. The circuits are in an open-circuit state, so that the performance of the product is not influenced, meanwhile, the circuits are short and are generally within 20 microns, so that the circuits are invisible in vision and the optical performance is not influenced, and once legal-related disputes and risks are generated, related areas can be found under a microscope, so that the safety of the product is improved. The length of a related special line is measured, then the production information of the product is recognized, and the anti-counterfeiting performance of the conductive film is further improved by additionally manufacturing two anti-counterfeiting marks.

Description

Technical Field

[0001] The present invention relates to the technical field of transparent conductive films, and particularly to a method for designing anti-counterfeiting marks on a transparent conductive film. Background Art

[0002] A transparent conductive film is a conductive film with high transmittance and low sheet resistance, and is widely used in fields such as touch screens, heating films, electromagnetic shielding films, and solar cells. Common materials include ITO, nano silver, graphene, copper metal grids, etc., and common production processes include 3D printing, inkjet printing, screen printing, direct metal writing, yellow light etching, nanoimprinting, etc. Assuming that products are made of the same materials and by the same methods, it is often difficult to tell the difference macroscopically and microscopically. However, due to differences in engineering levels and the strictness of quality control management, there may be certain differences in performance. For products related to transparent conductive films, such as capacitive touch films, transparent heating films, electromagnetic shielding films, transparent antenna films, etc., if the markings outside the effective area of the product are removed, it is often difficult to microscopically determine which manufacturer produced it. For example, for an electromagnetic shielding film, there is often only a grid structure without any markings, so there is a possibility of passing off inferior products as good ones, or disguising the products of one company as those of another company. When quality problems occur, it is easy to cause disputes. Therefore, it is necessary to set some special marks through the design of the grid, which can not only not affect the performance and appearance, but also quickly identify the products produced by the company in a certain period and batch. Summary of the Invention

[0003] The purpose of the present invention is to provide a method for designing anti-counterfeiting marks on a transparent conductive film to solve the problems raised in the above background art.

[0004] To achieve the above purpose, the present invention provides the following technical solution: A method for designing anti-counterfeiting marks on a transparent conductive film, comprising the following steps:

[0005] S1: Design a set of coding systems;

[0006] S2: Select a suitable edge grid area and draw several lines;

[0007] S3: Make the first anti-counterfeiting mark;

[0008] S4: Make the second anti-counterfeiting mark.

[0009] Preferably, the coding system is used to represent the production-related information of the mask plate.

[0010] Preferably, the production-related information includes manufacturing time, product size, and production site.

[0011] Preferably, the length of the circuit drawn in S2 is less than 20 μm.

[0012] Preferably, the circuit drawn in S2 is in an open state.

[0013] Preferably, the first anti-counterfeiting mark contains hidden information that cannot be directly recognized by the naked eye and displays the hidden information under polarized light irradiation. From top to bottom, it includes a bottom film layer, a marking color layer, an alignment layer, a liquid crystal layer, an adhesive layer, a printing layer, and a pressure-sensitive layer;

[0014] The bottom film layer is a transparent material film with a thickness of 10 - 300 μm. The alignment layer is a coating that induces the alignment of liquid crystal molecules and at least includes four regions with different optical anisotropies. The adhesive layer is a nano-silver photosensitive glue coating, and the printing layer contains two-dimensional codes and variable graphic information.

[0015] Preferably, the manufacturing method of the first anti-counterfeiting mark is specifically as follows:

[0016] S3-1, print the marking color layer on the bottom film layer;

[0017] S3-2, coat and align on the marking color layer to form an alignment layer;

[0018] S3-3, coat a layer of liquid crystal polymer coating on the alignment layer and cure it to form a liquid crystal layer;

[0019] S3-4, coat the bottom of the liquid crystal layer with photosensitive glue, then print the printing layer on a layer of base paper, and stick the liquid crystal layer and the printing layer together to obtain the first anti-counterfeiting mark.

[0020] Preferably, the first anti-counterfeiting mark and the second anti-counterfeiting mark are at different edges of the conductive film.

[0021] Preferably, the manufacturing method of the second anti-counterfeiting mark is specifically as follows:

[0022] S4-1, treat the surface of the conductive film;

[0023] S4-2, coat photoresist on the surface of the conductive film treated in the previous step and bake it at 97 °C for 3 min. Select a mask plate to cover the surface of the conductive film, then expose the patterned photoresist on the surface of the conductive film to expose the patterned surface of the conductive film, transfer the pattern of the mask plate to the surface of the conductive film, and remove the photolithography mask plate for later use;

[0024] S4-3, prepare the electrolyte;

[0025] S4-4, chemical deposition. Place the patterned conductive film and the platinum electrode as two electrodes in the electrolyte for chemical deposition. The deposition potential is 0.6 V - 1.2 V, the deposition time is 2 - 5 min, and the water bath deposition temperature is controlled in the range of 20 - 80 °C;

[0026] S4-5. Remove the excess photoresist. Immerse the patterned upconversion fluorescent film prepared by electrochemical deposition in an acetone solution at room temperature for 10 seconds, rinse it 3 times successively with acetone, alcohol, and deionized water to remove the residual photoresist on the substrate surface, and dry it for standby.

[0027] S4-6. Anneal. Place the prepared conductive film in a tube furnace for annealing for 1 - 5 h, with the annealing temperature being 300 - 600 °C. Or due to the difference in the absorption of near-infrared light by the upconversion fluorescent film and the conductive film, use a low-temperature near-infrared sintering method at 100 - 300 °C to selectively and rapidly heat-treat the conductive film to obtain a second anti-counterfeiting mark with upconversion luminescence characteristics.

[0028] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0029] A method for designing an anti-counterfeiting mark of a transparent conductive film proposed by the present invention can identify production information microscopically. Through a pre-designed code, several additional lines are drawn on some circuits when making the mask plate. These lines are in an open circuit state themselves, so they will not affect the performance of the product. At the same time, due to the short length of the lines, generally within 20 μm, they are also invisible visually and will not affect the optical performance. Once there is a risk of legal disputes, the relevant area can be found under a microscope, and the length of the relevant special lines can be measured to identify the production information of the product. Furthermore, by additionally making two anti-counterfeiting marks, the anti-counterfeiting performance of the conductive film is further enhanced. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a structural diagram at the edge of the present invention.

[0031] Figure 2 is Figure 1 a partial enlarged view in DETAILED DESCRIPTION OF THE EMBODIMENTS

[0032] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0033] Please refer to Figures 1 to 2 , the present invention provides a technical solution: A method for designing an anti-counterfeiting mark of a transparent conductive film, including the following steps:

[0034] S1: Design a coding system. The system should be as simple and easy to understand as possible. The coding system is used to represent the production-related information of the mask plate. The production-related information includes manufacturing time, product size, and production site.

[0035] S2: Select a suitable edge grid area and draw several lines.

[0036] S3: Make the first anti-counterfeiting mark.

[0037] S4: Make the second anti-counterfeiting mark.

[0038] The length of the lines drawn in S2 is less than 20um.

[0039] The lines drawn in S2 are in an open circuit state.

[0040] For example, assuming a product with a size of 86 inches made in August 2024, it can be encoded as 240886. As shown in the figure, copper wires with lengths of 4, 8, 0, 16, 16, and 12um can be drawn in the edge grid area of the product. In this way, the production information can be read by measuring the line length later, and a 2um difference can effectively avoid measurement errors. For the 0um line, even if it is not actually drawn, there will be space left for easy identification.

[0041] The first anti-counterfeiting mark contains hidden information that cannot be directly recognized by the naked eye. The hidden information is displayed under polarized light irradiation. From top to bottom, it includes a bottom film layer, a color marking layer, an alignment layer, a liquid crystal layer, an adhesive layer, a printing layer, and a pressure-sensitive layer.

[0042] The bottom film layer is a transparent material film with a thickness of 10 - 300μm. The alignment layer is a coating that induces the alignment of liquid crystal molecules and at least includes four regions with different optical anisotropies. The adhesive layer is a nano-silver photosensitive glue coating, and the printing layer contains a QR code and variable graphic information.

[0043] The specific method for making the first anti-counterfeiting mark is as follows:

[0044] S3-1: Print the color marking layer on the bottom film layer.

[0045] S3-2: Coat and align on the color marking layer to form the alignment layer.

[0046] S3-3: Coat a layer of liquid crystal polymer coating on the alignment layer and cure it to form the liquid crystal layer.

[0047] S3-4: Coat a photosensitive glue on the bottom of the liquid crystal layer, then print the printing layer on a layer of base paper, and stick the liquid crystal layer and the printing layer together to obtain the first anti-counterfeiting mark.

[0048] The first anti-counterfeiting mark and the second anti-counterfeiting mark are at different edges of the conductive film.

[0049] The manufacturing method of the second anti-counterfeiting mark is specifically as follows:

[0050] S4-1, Treat the surface of the conductive film;

[0051] S4-2, Coat photoresist on the surface of the conductive film treated in the previous step, bake it at 97 °C for 3 min, select a mask plate to cover the surface of the conductive film, then expose the patterned photoresist on the surface of the conductive film, expose the patterned surface of the conductive film, transfer the pattern of the mask plate to the surface of the conductive film, and remove the photolithography mask plate for later use;

[0052] S4-3, Prepare the electrolyte solution. Add a 0.1 mol / L chloride / nitrate solution of rare earth activator and a 0.1 mol / L chloride / nitrate solution of rare earth sensitizer to a 0.1 mol / L solution of yttrium nitrate or yttrium chloride to prepare a rare earth ion mixed solution; Adjust the pH value of a 0.003 - 0.3 mol / L complexing agent solution to 7.0 - 9.0 with a 5 mol / L sodium hydroxide solution and then add it to the rare earth ion mixed solution. The complexing agent reacts with the rare earth ions to form a complex solution, then add a sodium ascorbate solution with a concentration of 0.5 mol / L, adjust the pH of the mixed solution to 7.0 - 8.0 with a 5 mol / L sodium hydroxide solution. The volume ratio of the rare earth ion mixed solution, the complexing agent solution, and the sodium ascorbate solution is 2:1:2. Then add ammonium fluoride or sodium fluoride solution to make the molar ratio of fluoride ions to rare earth ions 4 - 5:1, and adjust the pH value to 5.0 - 7.0 with a 5 mol / L sodium hydroxide solution to obtain a transparent colloidal electrolyte solution for later use;

[0053] S4-4, Chemical deposition. Place the patterned conductive film and the platinum electrode as two electrodes in the electrolyte for chemical deposition. The deposition potential is 0.6 V - 1.2 V, the deposition time is 2 - 5 min, and the water bath deposition temperature is controlled in the range of 20 - 80 °C;

[0054] S4-5, Remove the excess photoresist. Immerse the patterned upconversion fluorescent film prepared by electrochemical deposition in a normal temperature acetone solution for 10 seconds, rinse it 3 times successively with acetone, alcohol, and deionized water to remove the residual photoresist on the substrate surface, and dry it for later use;

[0055] S4-6, Annealing. Place the obtained conductive film in a tube furnace for annealing for 1 - 5 h, the annealing temperature is 300 - 600 °C, or due to the absorption difference of the upconversion fluorescent film and the conductive film for near-infrared light, use a low-temperature near-infrared sintering method at 100 - 300 °C to selectively and rapidly heat-treat the conductive film to obtain the second anti-counterfeiting mark with upconversion luminescence characteristics.

[0056] In actual use, for a method of designing anti-counterfeiting marks for a transparent conductive film proposed by the present invention, the production information that can be recognized microscopically is obtained by means of a pre-designed code. When making a mask plate, several additional circuit lines are drawn on some of the circuit lines. These circuit lines are in an open circuit state themselves, so they will not affect the performance of the product. At the same time, since the circuit lines are short, generally within 20 μm, they are also invisible visually and will not affect the optical performance. Once there is a risk of legal disputes, the relevant area can be found under a microscope, the lengths of the relevant special circuit lines can be measured, and then the production information of the product can be identified. Furthermore, by additionally making two types of anti-counterfeiting marks, the anti-counterfeiting performance of the conductive film is further enhanced.

[0057] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for designing an anti-counterfeiting mark of a transparent conductive film, characterized in that: The following steps are included: S1: Design a coding system; S2: Select a suitable edge grid area and draw several lines; S3: making the first anti-counterfeiting mark; S4: Produce a second anti-counterfeiting mark.

2. The method for designing an anti-counterfeiting mark of a transparent conductive film according to claim 1, characterized in that: The coding system is used to indicate production-related information of the mask plate.

3. The method for designing an anti-counterfeiting mark of a transparent conductive film according to claim 2, characterized in that: The production-related information includes manufacturing time, product size, and production site.

4. The method for designing an anti-counterfeiting mark of a transparent conductive film according to claim 1, characterized in that: The length of the line drawn in S2 is less than 20 um.

5. The method for designing an anti-counterfeiting mark of a transparent conductive film according to claim 1, characterized in that: The circuit drawn in S2 is in an open circuit state.

6. The method for designing an anti-counterfeiting mark of a transparent conductive film according to claim 1, characterized in that: The first anti-counterfeiting mark contains hidden information that cannot be directly identified by the naked eye, and displays the hidden information under polarized light, which includes, from top to bottom, a base film layer, a color marking layer, an orientation layer, a liquid crystal layer, an adhesive layer, a printing layer, and a pressure-sensitive layer; The base film layer is a transparent film with a thickness of 10-300 μm. The orientation layer is a coating that induces directional arrangement of liquid crystal molecules and includes at least four regions with different optical anisotropies. The adhesive layer is a nano-silver photosensitive adhesive coating. The printing layer contains a QR code and variable graphic information.

7. The method for designing an anti-counterfeiting mark of a transparent conductive film according to claim 1, characterized in that: The first anti-counterfeiting mark production method is specifically as follows: S3-1, printing a color layer on the base film layer; S3-2, coating and orienting the color-coded layer to form an orientation layer; S3-3, coating a layer of liquid crystal polymer coating on the alignment layer, and curing the coating to form a liquid crystal layer; S3-4, coating the bottom of the liquid crystal layer with a photosensitive adhesive, then printing a printed layer on a layer of base paper, and gluing the liquid crystal layer and the printed layer together to obtain a first anti-counterfeiting mark.

8. The method for designing an anti-counterfeiting mark of a transparent conductive film according to claim 1, characterized in that: The first anti-counterfeiting mark and the second anti-counterfeiting mark are at different edges of the conductive film.

9. The method for designing an anti-counterfeiting mark of a transparent conductive film according to claim 1, characterized in that: The method for making the second anti-counterfeiting mark is specifically as follows: S4-1, treating the surface of the conductive film; S4-2, coating the surface of the conductive film treated in the previous step with photoresist, and baking at 97° C. for 3 min, selecting a mask to cover the surface of the conductive film, and then exposing the patterned photoresist on the surface of the conductive film to expose the patterned conductive film surface, transferring the pattern of the mask to the surface of the conductive film, removing the photolithography mask, and setting aside; S4-3, preparing electrolyte; S4-4, chemical deposition, placing the patterned conductive film and the platinum electrode as two electrodes in an electrolyte for chemical deposition, the deposition potential is 0.6V-1.2V, the deposition time is 2-5min, and the water bath deposition temperature is controlled in the range of 20-80°C; S4-5, removing excess photoresist, immersing the patterned up-conversion fluorescent film prepared by electrochemical deposition in a room temperature acetone solution for 10 seconds, washing with acetone, alcohol and deionized water three times in sequence to remove residual photoresist on the substrate surface, and drying for later use; S4-6, annealing, placing the conductive film prepared as above in a tubular furnace for annealing for 1-5 hours, the annealing temperature is 300-600℃, or due to the difference in absorption of near-infrared light by the up-conversion fluorescent film and the conductive film, a 100-300℃ low-temperature near-infrared sintering method is used to selectively and rapidly heat treat the conductive film to obtain a second anti-counterfeiting mark with up-conversion luminescence characteristics.

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