MEMS (Micro Electro Mechanical System) silicon-based atomizing core with capillary micropore double substrates and manufacturing method of MEMS silicon-based atomizing core

Abstract

The invention discloses an MEMS silicon-based atomization core with capillary micropore double substrates and a manufacturing method thereof, and the atomization core comprises a first substrate which is a silicon substrate with high thermal conductivity, is provided with a plurality of atomization holes in an array manner, and is provided with a metal electrode on the top surface; the second substrate is a low-heat-conductivity material substrate and is bonded on the bottom surface of the first substrate through a middle layer, and a plurality of through holes are formed in the second substrate in an array manner; and the atomization hole is communicated with the through hole to form a micro-channel liquid storage cavity. The problems that an existing atomization core is uneven in heating, low in atomization speed, poor in liquid locking and storing performance and prone to explosion can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of heating atomization cores, and more specifically to a MEMS silicon-based atomization core with capillary microporous double substrates and a manufacturing method thereof. Background Art

[0002] As the core component of liquid atomization products, the heating atomization core heats the liquid to make it turn into a misty aerosol form and emit. To ensure that users obtain a good taste and achieve rapid absorption, it is required that the atomization element heats and atomizes the liquid quickly, evenly, consistently, finely, and minimizes the generation of harmful substances.

[0003] The existing e-cigarette heating atomization cores mainly have the following three types:

[0004] First, the ceramic atomization core. The technical solution is mature and is the solution adopted by current mainstream products. It consists of two parts: ceramic and a heating electrode. The ceramic is made into a bowl-shaped structure through high-temperature sintering, and the heating film is designed in a specific shape and attached to the surface of the ceramic. During the working process, the heating film uniformly heats the liquid to form mist, and the mist is emitted through the ceramic honeycomb holes. However, for the existing ceramic atomization cores, due to the use of porous ceramic sintering technology for preparation, it is impossible to ensure the consistency of the pore diameters of the ceramic honeycomb holes, which easily causes uneven liquid atomization, local overheating, and carbonization blockage. At the same time, during the high-temperature atomization process of the liquid on the heating wire, metal elements will be doped into the mist, and the mist will cause certain harm to the human body. And due to the poor thermal conductivity of the ceramic, the atomization speed is slow, which further exacerbates the uneven atomization.

[0005] Second, the cotton atomization core. The technical solution is relatively mature. The structure is that a heating wire is spirally wound around organic cotton, and during operation, the liquid absorbed by the cotton is atomized by heating the heating wire. However, for the existing cotton atomization cores, since the heating wire is in direct contact with the cotton core, high temperature may cause the cotton core material to be atomized and inhaled by the user, posing a risk to health. At the same time, the service life of the cotton core is short, it is easy to dry burn, resulting in poor atomization stability, and this design cannot achieve large-scale automated production and cannot meet the quantity required for its development.

[0006] The third type is the silicon-based atomizing core, which is currently in the R & D and promotion stage. Compared with the ceramic core, it can better achieve processing consistency, structural diversity, and its material itself is relatively environmentally friendly, which is the future development direction of technology. Generally, micro-nano processing technology is used to deposit metal materials on a silicon substrate, pattern them into metal resistance heating wires and electrodes of specific shapes, and etch through holes outside the metal resistance wire and electrode areas on the silicon substrate as channels for liquid atomization. The existing silicon-based atomizing cores have consistent processing pore diameters and good thermal conductivity, overcoming some disadvantages of the ceramic core, but some problems have also arisen. For example, with a single silicon substrate structure, limited by mechanical strength, a relatively thick silicon substrate must be used, with a thickness usually greater than 300μm. Due to process capacity limitations, it is difficult to achieve a through-hole structure with a high aspect ratio. The hole diameter or side length of the atomizing holes is usually greater than 30μm, resulting in non-fine atomization and poor liquid locking performance. Since the atomizing core with this structure has good thermal conductivity, it cannot be in direct contact with the liquid tank, otherwise it may cause the liquid tank to explode. Additionally, due to its poor liquid storage and locking performance, auxiliary liquid separation, storage, and locking materials are required. Summary of the Invention

[0007] The purpose of the present invention is to provide a MEMS silicon-based atomizing core with a capillary microporous double substrate and its manufacturing method to solve the problems of uneven heating, slow atomization speed, poor liquid storage and locking performance, and easy explosion of the existing atomizing cores.

[0008] To achieve the above purpose, the present invention adopts the following technical solutions: A MEMS silicon-based atomizing core with a capillary microporous double substrate includes:

[0009] A first substrate, which is a silicon substrate with high thermal conductivity, on which a plurality of atomizing holes are arranged in an array, and metal electrodes are provided on its top surface;

[0010] A second substrate, which is a substrate of low thermal conductivity material, is bonded to the bottom surface of the first substrate through an intermediate layer, and a plurality of through holes are arranged in an array on it;

[0011] Among them, the atomizing holes are communicated with the through holes to form a microchannel liquid storage cavity.

[0012] As a further description of the above technical solution:

[0013] The thickness of the first substrate is 10μm - 200μm.

[0014] As a further description of the above technical solution:

[0015] The aperture of the atomizing holes is 10μm - 200μm.

[0016] As a further description of the above technical solution:

[0017] The second substrate is a glass sheet, a quartz sheet or a ceramic sheet.

[0018] As a further description of the above technical solution:

[0019] The aperture of the through hole is 10μm - 100μm.

[0020] As a further description of the above technical solution:

[0021] The material of the metal electrode includes any one of Ti / Au, Ti / Pt, Ti / TiN / Au, Ti / TiN / Pt, Ta / Au, Ta / Pt, Ta / TaN / Au, Ta / TaN / Pt.

[0022] The manufacturing method of the above MEMS silicon-based atomization core with a capillary microporous double substrate includes the following steps:

[0023] S1. Prepare a second substrate wafer and drill holes in it to form a number of the through holes penetrating therethrough;

[0024] S2. Prepare a first substrate wafer and bond it to the second substrate formed in step S1;

[0025] S3. Thinning process the first substrate wafer to form a first substrate substrate;

[0026] S4. Deposit the metal electrode on the surface of the first substrate substrate and etch to form a specific pattern;

[0027] S5. Etch the first substrate substrate to form atomization holes communicating with the through holes.

[0028] In summary, due to the adoption of the above technical solution, the present invention has the following beneficial effects compared with the prior art:

[0029] The silicon-based atomizing core of the present invention and the corresponding manufacturing method can improve the consistency of the size and shape of atomizing holes through micro-nano processing technology, thereby ensuring uniform heating atomization and fast heating speed. Adopting a double-substrate structure, based on a silicon substrate with high thermal conductivity, a second substrate of a material with low thermal conductivity is fixed below it. With the support of the second substrate, the thickness of the silicon substrate and the aperture of the atomizing holes thereon can be made very small. While ensuring the structural strength, the liquid introduced into the atomizing core from the liquid storage chamber is stored in the micro-channel liquid storage cavity by the capillary action formed by the through holes, improving the liquid locking effect. The liquid enters the atomizing holes, and by energizing the silicon structure of the first substrate, it generates heat to achieve the heating effect, and then realizes liquid atomization, so as to improve the atomization performance of the silicon-based atomizing core, make the atomization effect more delicate, reduce the difficulty of liquid atomization preparation, and the setting of the second substrate forms a heat buffer zone between the first substrate for heating atomization and the liquid storage chamber, preheating the liquid, so as to improve the overall atomization efficiency while avoiding the phenomenon of explosion of the liquid storage chamber caused by the heat transferred by the first substrate in the atomizing core directly contacting the liquid storage chamber. Description of the Drawings

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other relevant drawings can also be obtained based on these drawings.

[0031] Figure 1 It is a schematic structural diagram of a MEMS silicon-based atomizing core with a capillary microporous double substrate.

[0032] Figure 2 It is a processing schematic diagram of a MEMS silicon-based atomizing core with a capillary microporous double substrate in step S1.

[0033] Figure 3 It is a processing schematic diagram of a MEMS silicon-based atomizing core with a capillary microporous double substrate in step S2.

[0034] Figure 4 It is a processing schematic diagram of a MEMS silicon-based atomizing core with a capillary microporous double substrate in step S3.

[0035] Figure 5 It is a processing schematic diagram of a MEMS silicon-based atomizing core with a capillary microporous double substrate in step S4.

[0036] Figure 6 It is a processing schematic diagram of a MEMS silicon-based atomizing core with a capillary microporous double substrate in step S5.

[0037] Legend Explanation:

[0038] 1. First substrate; 2. Atomization holes; 3. Metal electrodes; 4. Second substrate; 5. Intermediate layer; 6. Through holes; 10. Original wafer of the second substrate; 20. Original wafer of the first substrate; 30. Substrate wafer of the first substrate. Detailed implementation manners

[0039] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. Generally, the components of the embodiments of the present invention described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0040] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed present invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0041] It should be noted that like reference numerals and letters denote like items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0042] In the description of the embodiments of the present invention, it should be noted that the orientation or positional relationship indicated by terms such as "upper", "inner", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of the present invention is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention.

[0043] In the description of the present invention, it should also be noted that unless otherwise clearly defined and limited, the terms "arranged", "installed", "connected", "coupled" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be directly connected, or indirectly connected through an intermediate medium, or the internal communication of two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0044] Embodiment 1:

[0045] Please refer to Figure 1-6 , the present invention provides a technical solution: A MEMS silicon-based atomization core with a capillary microporous double substrate, comprising:

[0046] The first substrate 1, which is a silicon substrate with high thermal conductivity, on which a plurality of atomization holes 2 are arranged in an array, and a metal electrode 3 is provided on its top surface; the first substrate 1 is made of a silicon wafer, and this material has a certain electrical conductivity and can be used as a heating atomization structure layer;

[0047] The second substrate 4, which is a substrate made of a material with low thermal conductivity, is bonded to the bottom surface of the first substrate 1 through an intermediate layer 5, and a plurality of through holes 6 are arranged in an array thereon;

[0048] Wherein, the atomization holes 2 are communicated with the through holes 6 to form a microchannel liquid storage cavity.

[0049] The manufacturing method of the above-mentioned MEMS silicon-based atomization core with a capillary microporous double substrate includes the following steps:

[0050] S1. Prepare the second substrate wafer 10 and punch holes in it to form a plurality of the through holes 6 penetrating therethrough; the punching method can adopt processes such as laser punching, sandblasting punching or etching;

[0051] S2. Prepare the first substrate wafer 20 and bond it to the second substrate 4 formed in step S1; specifically, techniques such as anodic bonding process, glass paste bonding process, metal eutectic or diffusion bonding can be used to achieve the bonding of the structure;

[0052] S3. Perform a thinning treatment on the first substrate wafer 20 to form a first substrate substrate 30; the thinning treatment can specifically use processes such as chemical mechanical thinning and wet etching thinning;

[0053] S4. Deposit the metal electrode 3 on the surface of the first substrate substrate 30 and etch it to form a specific pattern through a dry etching or wet etching process;

[0054] S5. Etch the atomization holes 2 communicating with the through holes 6 on the first substrate substrate 30 to form a heating atomization structure layer.

[0055] This silicon-based atomization core can improve the consistency of the size and shape of the atomization holes through micro-nano processing technology, and further ensure uniform heating atomization and fast heating speed. Adopting a double-substrate structure, on the basis of a silicon substrate with high thermal conductivity, a second substrate made of a material with low thermal conductivity is fixed below it. With the support of the second substrate, the thickness of the silicon substrate and the aperture of the atomization holes thereon can be made very small. While ensuring the structural strength, the liquid introduced into the atomization core from the liquid storage chamber is stored in the microchannel liquid storage cavity by the capillary action formed by the through holes, improving the liquid locking effect. The liquid enters the atomization holes, and by energizing the silicon structure of the first substrate to make it heat, the heating effect is realized, and then the liquid atomization is realized to improve the atomization performance of the silicon-based atomization core, making the atomization effect more delicate and reducing the difficulty of liquid atomization preparation. The specific directions of the above liquid flow and atomization gas movement are as follows Figure 1As shown by the arrow, and the second substrate is arranged such that a heat buffer zone is formed between the first substrate for heating and atomizing and the liquid storage chamber, preheating the liquid, so as to improve the overall atomization efficiency while avoiding the phenomenon of explosion of the liquid storage chamber caused by the heat transferred by the first substrate in the atomization core directly contacting the liquid storage chamber.

[0056] Embodiment 2:

[0057] On the basis of the above Embodiment 1, preferably, the thickness of the first substrate 1 is 10 μm - 200 μm. The aperture of the atomization holes 2 is 10 μm - 200 μm. Compared with common silicon-based atomization cores (with a thickness greater than 300 μm and an aperture of the atomization holes greater than 30 μm), the thickness of the first silicon-based substrate of this atomization core is greatly reduced and has high structural strength, and the aperture of the atomization holes can be as low as 10 μm, enabling a high aspect ratio of the flow-through holes, making the atomization more delicate and improving the liquid storage and liquid locking performance.

[0058] Embodiment 3:

[0059] On the basis of the above Embodiment 1, preferably, the second substrate 4 is a glass sheet, a quartz sheet or a ceramic sheet to achieve a stable heat buffer between the first substrate and the liquid storage chamber, preheating the liquid, so as to improve the overall atomization efficiency while avoiding the phenomenon of explosion of the liquid storage chamber caused by the heat transferred by the first substrate in the atomization core directly contacting the liquid storage chamber. The aperture of the through holes 6 is 10 μm - 100 μm. Thereby, the aspect ratio of the flow-through holes is increased, making the capillary action significant and improving the liquid locking effect.

[0060] Embodiment 4:

[0061] On the basis of the above Embodiment 1, preferably, the material of the metal electrode 3 includes any one of Ti / Au, Ti / Pt, Ti / TiN / Au, Ti / TiN / Pt, Ta / Au, Ta / Pt, Ta / TaN / Au, Ta / TaN / Pt. The above are all metal materials harmless to the human body to reduce the harm of the atomization core to the human body.

[0062] In summary, due to the adoption of the above technical solutions, a MEMS silicon-based atomization core with a capillary microporous double substrate and its manufacturing method in this embodiment have the following beneficial effects compared with the prior art:

[0063] The silicon-based atomizing core of the present invention and the corresponding manufacturing method can improve the consistency of the size and shape of atomizing holes through micro-nano processing technology, thereby ensuring uniform heating atomization and fast heating speed. Adopting a double-substrate structure, based on a silicon substrate with high thermal conductivity, a second substrate made of a material with low thermal conductivity is fixed below it. With the support of the second substrate, the thickness of the silicon substrate and the aperture of the atomizing holes on it can be made very small. While ensuring the structural strength, the liquid introduced into the atomizing core from the liquid storage chamber is stored in the microchannel liquid storage cavity by the capillary action formed by the through holes, improving the liquid locking effect. The liquid enters the atomizing holes, and by energizing the silicon structure of the first substrate, it generates heat to achieve the heating effect, and then realizes liquid atomization, so as to improve the atomization performance of the silicon-based atomizing core, make the atomization effect more delicate, reduce the difficulty of liquid atomization preparation, and the setting of the second substrate forms a heat buffer zone between the first substrate for heating atomization and the liquid storage chamber, preheating the liquid, so as to improve the overall atomization efficiency while avoiding the phenomenon of explosion of the liquid storage chamber caused by the heat transferred by the first substrate in the atomizing core directly contacting the liquid storage chamber.

[0064] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution of the present invention and its inventive concept, makes equivalent substitutions or changes, and should be covered by the protection scope of the present invention.

Claims

1. A MEMS silicon-based atomizer core with a capillary microporous double substrate, characterized in that: include: The first substrate is a silicon substrate with high thermal conductivity, on which a plurality of atomization holes are arranged in an array, and a metal electrode is disposed on the top surface; A second substrate, which is a low thermal conductivity material substrate, is bonded to the bottom surface of the first substrate through an intermediate layer, and has a plurality of through holes arranged in an array; Wherein, the atomization hole is connected with the through hole to form a microchannel liquid storage cavity.

2. A MEMS silicon-based atomizer core with capillary and microporous double substrate according to claim 1, characterized in that: The thickness of the first substrate is 10 μm-200 μm.

3. According to claim 1, a MEMS silicon-based atomizer core with a capillary microporous double substrate is characterized in that: The aperture of the atomization hole is 10 μm-200 μm.

4. A MEMS silicon-based atomizer core with capillary and microporous double substrate according to claim 1, characterized in that: The second substrate is a glass sheet, a quartz sheet or a ceramic sheet.

5. The MEMS silicon-based atomizer core with capillary and microporous double substrate according to claim 1, characterized in that: The through hole has a diameter of 10 μm-100 μm.

6. The MEMS silicon-based atomizer core with capillary and microporous double substrate according to claim 1, characterized in that: The material of the metal electrode includes any one of Ti / Au, Ti / Pt, Ti / TiN / Au, Ti / TiN / Pt, Ta / Au, Ta / Pt, Ta / TaN / Au, and Ta / TaN / Pt.

7. The method for manufacturing a MEMS silicon-based atomizer core having a capillary and microporous double substrate according to claim 1, characterized in that: The following steps are involved: S1, preparing a second substrate original sheet, and punching it so that a plurality of through holes are formed therethrough; S2, preparing a first substrate original sheet, and bonding it to the second substrate formed in step S1; S3, thinning the first substrate original sheet to form a first substrate base sheet; S4, depositing the metal electrode on the surface of the first substrate and etching to form a specific pattern; S5. Atomization holes communicating with the through holes are formed by etching the first substrate.

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