Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus, comprising: RF power supplies including a high-frequency RF power supply and a low-frequency RF power supply; an upper electrode coupled to the RF power source; a lower electrode including a plurality of electrode partitions, the RF power source applying power to the plurality of electrode partitions through the upper electrode, respectively; the power detection module is used for detecting high-frequency power and low-frequency power applied to each electrode partition by the high-frequency RF power supply and the low-frequency RF power supply; and the electrode impedance adjusting module is used for adjusting high-frequency impedance and low-frequency impedance from each electrode partition to a grounding end according to a detection signal of the power detection module.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology and relates to a substrate processing device. Background Art

[0002] Semiconductor substrate processing devices are used to process semiconductor substrates through technologies including plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), and plasma enhanced pulsed deposition layer (PEPDL). One type of semiconductor substrate processing device is a plasma processing device including a reaction chamber containing an upper electrode and a lower electrode, where radio frequency (RF) power is applied between the electrodes to excite a process gas into a plasma for processing the semiconductor substrate in the reaction chamber.

[0003] During substrate processing, for example, in PECVD, ion bombardment is an important factor causing stress on the substrate. Too strong local stress on the substrate often leads to a high degree of substrate warping. In addition, due to the non-uniformity of factors such as gas flow, temperature, and plasma distribution, the non-uniformity of film quality or film thickness results in poor uniformity of the film on the substrate surface, and the above problems cannot be precisely controlled and adjusted by known substrate processing devices.

[0004] Therefore, it is necessary to provide a new substrate processing device. Summary of the Invention

[0005] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a substrate processing device for solving the problem that the substrate processing device in the prior art cannot be precisely controlled and adjusted.

[0006] To achieve the above purpose and other related purposes, a substrate processing device includes:

[0007] An RF power supply, including a high-frequency RF power supply and a low-frequency RF power supply;

[0008] An upper electrode, coupled to the RF power supply;

[0009] A lower electrode, including a plurality of electrode partitions, and the RF power supply applies power to the plurality of electrode partitions respectively through the upper electrode;

[0010] A power detection module, configured to detect the high-frequency power and low-frequency power applied by the high-frequency RF power supply and the low-frequency RF power supply to each electrode partition;

[0011] An electrode impedance adjustment module, configured to adjust the high-frequency impedance and low-frequency impedance of each electrode partition to the ground terminal according to the detection signal of the power detection module.

[0012] Optionally, during different processes or different stages of the same process of processing the substrate by the substrate processing apparatus, the electrode impedance adjustment module is configured to adjust the impedance values of the high-frequency impedance and / or low-frequency impedance from the lower electrode to the ground terminal, so that the first current applied by the RF power supply to the upper electrode is switched to the second current.

[0013] Optionally, the electrode impedance adjustment module is configured to adjust the impedance value of the high-frequency impedance or low-frequency impedance from at least one electrode partition to the ground terminal.

[0014] Optionally, the electrode impedance adjustment module is configured to separately adjust the impedance values of the high-frequency impedance and low-frequency impedance from at least one electrode partition to the ground terminal.

[0015] Optionally, the electrode impedance adjustment module includes a high-frequency impedance adjustment circuit and a low-frequency impedance adjustment circuit, and both the high-frequency impedance adjustment circuit and the low-frequency impedance adjustment circuit include capacitors and / or inductors.

[0016] Optionally, the capacitor and / or the inductor is adjustable.

[0017] Optionally, each electrode partition is respectively coupled to the electrode impedance adjustment module through a switch, and the switch is used to control the on / off of each electrode partition.

[0018] Optionally, the lower electrode is equally divided.

[0019] Optionally, the lower electrode includes an inner electrode and at least one outer electrode surrounding the inner electrode, and the inner electrode and the outer electrode are the electrode partitions.

[0020] Optionally, there are multiple outer electrodes, and the multiple outer electrodes are arranged radially outward at intervals in sequence from the outer edge of the inner electrode.

[0021] Optionally, the inner electrode and / or at least one outer electrode is equally divided.

[0022] Optionally, the electrode impedance adjustment module includes a plurality of impedance adjustment circuits, and each impedance adjustment circuit includes a high-frequency impedance circuit and a low-frequency impedance circuit connected in parallel with each other, and is respectively used to adjust the high-frequency impedance and low-frequency impedance from each electrode partition to the ground terminal.

[0023] Optionally, the power detection module includes a voltage and current sensor.

[0024] As described above, in the substrate processing apparatus of the present invention, by partitioning the lower electrode, RF power can be separately applied to each electrode partition corresponding to a local area of the substrate, and by adjusting the high-frequency impedance and low-frequency impedance of each electrode partition to the ground terminal, the high-frequency power and low-frequency power applied to each electrode can be separately adjusted, making the adjustment of the substrate processing apparatus more precise. Furthermore, the film formation properties of the local area of the substrate can be adjusted, optimizing the uniformity of the film on the substrate surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 FIG. is a schematic structural diagram of an embodiment of the substrate processing apparatus in the present invention.

[0026] Figure 2 FIG. is a schematic structural diagram of another embodiment of the substrate processing apparatus in the present invention.

[0027] Figure 3 (a)- Figure 3 (c) are schematic diagrams of the outer electrode of the present invention being one, two, and three ring electrodes respectively.

[0028] Figure 4 (a)- Figure 4 (c) are schematic diagrams of specific embodiments of the inner electrode of the present invention being bisected, trisected, and quadrisected electrodes respectively.

[0029] Figure 5 FIG. is a schematic diagram of another embodiment of the inner electrode of the present invention being a trisected electrode.

[0030] Figure 6 FIG. is a schematic diagram of the lower electrode of the present invention being bisected. DETAILED DESCRIPTION OF THE INVENTION

[0031] The following specifically illustrates the embodiments of the present invention through specific examples. Those skilled in the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0032] When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional views showing the device structure will be enlarged locally out of the general scale, and the schematic diagrams are only examples and should not limit the scope of protection of the present invention here. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.

[0033] For convenience of description, spatial relationship terms such as "below", "beneath", "lower", "less than", "under", "above", "upper", "on" may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatial relationship terms are intended to encompass other orientations of the device in use or operation in addition to the orientations depicted in the drawings. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or there can be one or more intervening layers. As used herein, "between... and..." means including the endpoint values.

[0034] In the context of the present application, the structure in which the first feature is "above" the second feature as described may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0035] It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention schematically. Thus, only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of the components in actual implementation can be arbitrarily changed, and the component layout type may also be more complex. Although the substrate processing apparatus is described below in the context of plasma enhanced chemical vapor deposition, the substrate processing apparatus and the method of zoning control of power can be applied to other types of plasma processing chambers, such as atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), plasma enhanced pulsed deposition layer (PEPDL) techniques for processing semiconductor substrates, and other plasma systems that require plasma tuning.

[0036] As Figure 1 shown, this embodiment provides a substrate processing apparatus for plasma enhanced atomic layer deposition of a substrate. The substrate processing apparatus includes an RF power supply 100, an upper electrode 200 coupled to the RF power supply 100, and a substrate support 800 for supporting the substrate W. In one embodiment, the upper electrode 200 also serves as a showerhead for supplying process gas, and the process gas enters the substrate processing apparatus through the showerhead. The substrate support 800 can be formed of a ceramic material, and its upper surface is used to carry the substrate W. The lower electrode 300 is embedded in the substrate support 800 (for the specific design of the lower electrode 300, please refer specifically to Figures 3 to 5)。The RF power supply 100 outputs current to the upper electrode 200. The lower electrode 300 is coupled to the upper electrode 200, and a radio frequency electric field is formed between the upper and lower electrodes, which is used to excite the process gas to form plasma for depositing a thin film on the substrate surface. The lower electrode 300 includes a plurality of electrode partitions, and each electrode partition is coupled to an electrode impedance adjustment module through a power detection module, and the electrode impedance adjustment module is grounded. The power detection module includes a plurality of sensors 500, and the electrode impedance adjustment module includes a plurality of impedance adjustment circuits 400. The plurality of impedance adjustment circuits 400 are respectively used to adjust the impedance from each electrode partition to the ground terminal to adjust the radio frequency power applied to each electrode partition.

[0037] The RF power supply 100 applies power to the lower electrode 300 through the upper electrode 200 to generate and maintain plasma between the upper and lower electrodes. The RF power supply 100 includes a high-frequency RF power supply 111 and a low-frequency RF power supply 121. Figure 1 The specific implementation manner in which the RF power supply 100 includes a high-frequency RF power supply 111 and a low-frequency RF power supply 121 is shown. The high-frequency RF power supply 111 is coupled to the upper electrode 200 through a matching network 112, and the low-frequency RF power supply 121 is coupled to the upper electrode 200 through a matching network 122. In this setting manner of the RF power supply, the high-frequency RF power supply and the low-frequency RF power supply can apply power to the upper electrode 200 through the matching networks of the corresponding frequencies according to the process requirements to excite the process gas to form plasma. The frequency applied by the high-frequency RF power supply is higher than that of the low-frequency RF power supply. During operation, it is preferred that the frequency ranges of the high-frequency power supply and the low-frequency power supply do not intersect. That is to say, the low-frequency RF power supply 121 always operates at a frequency lower than that of the high-frequency RF power supply 111. For example, the frequencies of commonly used high-frequency RF power supplies are 13.56 MHz and 27.12 MHz, and the frequencies of low-frequency RF power supplies are 370 kHz and 400 kHz.

[0038] The lower electrode 300 is disposed in the substrate support 800. For the specific structure of the lower electrode, please refer to Figures 3 to 6 。The lower electrode 300 is a metal wire mesh and can be formed of aluminum, copper, or other conductive metal materials. The lower electrode is partitioned into a plurality of regions according to the arrangement with intervals from each other in different regions, so that the lower electrode is divided into a plurality of electrode partitions, and the plurality of electrode partitions are spaced apart from each other and insulated from each other. Exemplarily, in one embodiment, the lower electrode is equally divided into a plurality of electrode partitions, such as Figure 6The middle and lower electrodes are bisected. In other embodiments not shown, the lower electrode can be divided in other ways, such as into three equal parts, four equal parts, etc. In another embodiment, the lower electrode is divided into an inner electrode and an outer electrode according to the regions of the inner electrode and the outer electrode. Further, in other embodiments, the inner electrode and / or at least one outer electrode are further divided into equal parts according to different regions to form a plurality of inner electrode partitions and a plurality of outer electrode partitions. Exemplarily, the lower electrode 300 includes an inner electrode and at least one outer electrode surrounding the inner electrode. The outer electrode includes at least one of a first outer electrode and a second outer electrode. Among them, the outer electrode that is not divided is the first outer electrode, and the one that is divided is the second outer electrode. For example Figures 3 to 5 in, for example, the lower electrodes 310, 320, 330, 340, 350, 360, 370 respectively include first outer electrodes 312, 322, 332, 342, 351, 361, 371. Refer to Figure 5 , the second outer electrode 374 is divided into a plurality of outer electrode partitions. The number of the first outer electrodes is at least one. If the number of the first outer electrodes is multiple, the multiple first outer electrodes can be arranged radially outward at intervals in sequence from the outer edge of the inner electrode. For example Figure 3 (a) In the lower electrode 310, 1 first outer electrode 312 is arranged radially outward from the outer edge of the inner electrode 311, and there is a gap (not marked) between the first outer electrode 312 and the inner electrode 311. In another embodiment, such as the lower electrodes 320, 330 in 3(b)-3(c), multiple first outer electrodes 322, 332 are arranged radially outward at intervals in sequence from the outer edge of the inner electrode. In the same lower electrode, the first outer electrode and the second outer electrode can be freely combined, including at least one first outer electrode and / or at least one second outer electrode. Exemplarily, in one embodiment, for example Figure 5 in, the lower electrode 370 has 1 first outer electrode 371 and 1 second outer electrode 374. In other embodiments not shown, the first outer electrode and the second outer electrode can also have other combination ways. In one of the combination ways, for example, the lower electrode includes multiple first outer electrodes 371 and 1 second outer electrode 374, and the multiple first outer electrodes are arranged radially outward at intervals in sequence from the outer edge of the second outer electrode. In another combination way, the lower electrode includes multiple second outer electrodes and does not include a first inner electrode. At this time, the multiple second outer electrodes are arranged radially outward at intervals in sequence from the outer edge of the inner electrode. In yet another combination way, the lower electrode includes multiple first outer electrodes and multiple second outer electrodes. The multiple first outer electrodes are arranged radially outward at intervals in sequence from the outer edge of the inner electrode, and the multiple second outer electrodes are arranged radially outward at intervals in sequence from the outer edge of the outermost one among the multiple first outer electrodes. There are also other combination ways not listed one by one. The inner electrode can be optionally divided or not divided. For example Figure 3 in, the inner electrodes 311, 321, 331 are not divided, Figure 4 and Figure 5The middle inner electrodes 341, 352, 362, and 372 are equally divided into inner electrode partitions. Figure 3 , Figure 5 The gaps between the electrode partitions of the middle lower electrodes 310, 320, and 330 are schematically shown in the figure. Figure 4 The gaps between the electrode partitions of the middle lower electrodes 340, 350, and 360 are not schematically shown in the figure.

[0039] The lower electrode also has a connecting portion. The connecting portion passes through the gaps formed by the intervals between the inner electrode partitions and extends to the inner edge of the outer electrode. For example, Figure 4 in (a), the connecting portion 343 passes through the gap (not shown in the figure) between the two inner electrode partitions of the inner electrode 341, and both ends extend to the inner edge of the outer electrode 342 and do not contact the inner electrode 341. For example, Figure 4 in (b), the connecting portion 353 starts from the central region 354 and passes through the gaps (the gaps are not shown in the figure) formed by the intervals between 3 inner electrode partitions respectively and extends to the inner edge of the outer electrode 351. For example, Figure 4 in (c), the connecting portion 364 starts from the central region 363 and passes through the gaps formed by the intervals between 4 inner electrode partitions of the inner electrode 362 and extends to the inner edge of the outer electrode 361. For example, Figure 5 in, the first connecting portion 375 starts from the central region 376 and passes through the gaps formed by the intervals between 3 inner electrode partitions respectively and extends to the inner edge of the first outer electrode 371, and the second connecting portion 373 starts from the central region 376 and passes through the gaps formed by the intervals between 3 inner electrode partitions and extends to the inner edge of the second outer electrode 374. The central region can be specifically described as not exceeding one-third of the circular radius determined by the outer edge of the inner electrode. By setting the connecting portion to connect from the central region to the inner edge of the outer electrode, it is convenient to electrically connect the inner electrode and the outer electrode to the impedance adjustment circuit 400 in the limited space of the central region.

[0040] In one embodiment, the lower electrode is equally divided to form a plurality of electrode partitions, then ESC (electrostatic chuck) voltage can be applied to the plurality of electrode partitions simultaneously to generate an electrostatic adsorption effect on the substrate. For example, Figure 6 in, the lower electrode 380 includes two equally divided electrode partitions, and ESC voltage is applied to the two electrode partitions simultaneously to generate an electrostatic adsorption effect on the substrate. In another embodiment, the lower electrode includes an inner electrode and an outer electrode, the outer electrode includes at least one first outer electrode and / or at least one second outer electrode, the inner electrode is a whole or equally divided into a plurality of inner electrode partitions, and ESC voltage can be applied to the inner electrode without applying it to the outer electrode to generate an electrostatic adsorption effect on the substrate. When the inner electrode is equally divided into a plurality of inner electrode partitions and arranged at intervals, ESC voltage is applied to the plurality of inner electrode partitions simultaneously to generate an electrostatic adsorption effect on the substrate. For example, Figure 4(a) The lower middle electrode 340 includes two inner electrode partitions, and the ESC voltage application circuit 700 applies the ESC voltage to the two inner electrode partitions simultaneously, as shown in Figure 2 the schematic diagram in. In another embodiment, the inner electrode is an integral body, and the ESC voltage application circuit 700 applies the ESC voltage to an inner electrode to generate an electrostatic adsorption effect on the substrate. For example, Figure 3 (a) The inner electrode 311 of the lower electrode 310 applies the ESC voltage as shown in Figure 1 the schematic diagram in. The ESC voltage application circuit 700 is coupled to the inner electrode and the ground terminal. In one embodiment, the ESC voltage application circuit 700 can be connected between the inner electrode and the impedance adjustment circuit. In another embodiment, the ESC voltage application circuit 700 can also be connected in the impedance adjustment circuit 400, which will be described in detail below.

[0041] The impedance adjustment circuit module includes at least one impedance adjustment circuit 400, which is used to regulate the impedance of at least one of the multiple electrode partitions of the lower electrode to the ground terminal, so as to adjust the power applied by the high-frequency RF power supply 111 and / or the high-frequency RF power supply 111 and the low-frequency RF power supply 121 to at least one electrode partition. The impedance adjustment circuit 400 includes a high-frequency impedance adjustment circuit 410 or includes a high-frequency impedance adjustment circuit 410 and a low-frequency impedance adjustment circuit 420. The high-frequency impedance adjustment circuit 410 adjusts the high-frequency impedance of the electrode partition to the ground terminal to adjust the high-frequency power applied by the high-frequency RF power supply 111 to the electrode partition. The low-frequency impedance adjustment circuit 420 adjusts the low-frequency impedance of the electrode partition to the ground terminal to adjust the low-frequency power applied by the low-frequency RF power supply 121 to the electrode partition. The high-frequency impedance adjustment circuit 410 and the low-frequency impedance adjustment circuit 420 each include at least one of an inductor and a capacitor. Specifically, the high-frequency impedance adjustment circuit 410 includes an inductor 411 and a capacitor 412, and the low-frequency impedance adjustment circuit 420 includes an inductor 421 and a capacitor 422. The ESC voltage application circuit 700 is coupled between the inductor 421 and the capacitor 422 of the low-frequency impedance adjustment circuit 420, and the ESC voltage application circuit 700 applies a voltage to the lower electrode through the inductor 421 to generate an electrostatic adsorption effect on the substrate. In various embodiments, at least one capacitor and / or inductor is adjustable, so that the impedance of each electrode partition to the ground terminal is adjustable. Each electrode partition of the lower electrode is respectively coupled to a high-frequency impedance adjustment circuit and a low-frequency impedance adjustment circuit connected in parallel. The high-frequency impedance adjustment circuit and the low-frequency impedance adjustment circuit are both grounded separately. The high-frequency impedance adjustment circuit only conducts high-frequency current, and the low-frequency impedance adjustment circuit only conducts low-frequency current, realizing high-low frequency shunt, and the high-low frequency RF power is adjustable. The high-low frequency impedance adjustment circuit adjusts the impedance of the electrode partition to the ground terminal by adjusting the inductor or / and capacitor.

[0042] A switch 600 is coupled between each electrode partition and the impedance adjustment circuit 400 respectively. Each switch 600 is used to control whether the high-frequency RF power supply 111 and the low-frequency RF power supply 121 apply power to the electrode partition. In one embodiment, each impedance adjustment circuit 400 is respectively coupled to each electrode partition through each switch 600 in one-to-one correspondence. Each switch 600 can control whether the high-frequency RF power supply 111 and the low-frequency RF power supply 121 apply power to the corresponding electrode partition, as Figure 1 and Figure 2 shown. In the PECVD process, if the film thickness of the substrate area corresponding to the outer electrode is thicker than the film thickness of the substrate area corresponding to the inner electrode, as Figure 2 , the switch 600 corresponding to the outer electrode can be turned on, so that the circuit between the outer electrode and the impedance adjustment circuit becomes an open circuit, and the high-frequency RF power supply 111 and the low-frequency RF power supply 121 do not apply power to the outer electrode.

[0043] The power detection module is used to detect the high-frequency power and low-frequency power applied by the high-frequency RF power supply and the low-frequency RF power supply to each electrode partition. The power detection module includes a plurality of sensors 500. Each electrode partition of the lower electrode is coupled to each impedance adjustment circuit 400 through a corresponding sensor 500. Each sensor 500 is used to simultaneously measure the currents output by both the high-frequency RF power supply 111 and the low-frequency RF power supply 121 in the same electrode partition, so as to monitor the high-frequency RF power and low-frequency power applied to each electrode partition. The sensor 500 can be a voltage and current sensor (for example, a V / I sensor), as Figure 1 and Figure 2 shown. In one embodiment, during the entire process of the RF power supply, such as in PECVD, the current value output to the upper electrode remains unchanged. In another embodiment, during different manufacturing processes or different stages of the same manufacturing process, the electrode impedance adjustment module adjusts the impedance values of the high-frequency impedance and / or low-frequency impedance of at least one of the multiple electrode partitions to the ground terminal, so that the first current applied by the high-frequency RF power supply and the low-frequency RF power supply to the upper electrode is switched to the second current. For example, in the same manufacturing process of PECVD, if the stress of a certain electrode partition is too high, then the low-frequency impedance of the corresponding electrode partition is adjusted. The low-frequency impedance value increases and the high-frequency impedance value remains unchanged, so that the ion bombardment of the electrode partition is weakened, the stress is reduced, and at the same time, the high-frequency impedance is not affected and the film thickness is not affected as much as possible, thereby optimizing the uniformity of the film on the substrate surface. In other embodiments, the high-frequency impedance value corresponding to the same electrode partition can also be adjusted while the low-frequency impedance value remains unchanged. In yet another embodiment, the impedance values of the high-frequency impedance and the low-frequency impedance corresponding to the same electrode partition can also be adjusted simultaneously. For example, in different manufacturing processes of PECVD, silicon nitride and silicon oxide are alternately formed into films on the substrate surface, and it is necessary to simultaneously adjust the high-frequency impedance and the low-frequency impedance corresponding to the same electrode partition.

[0044] When processing a substrate with plasma, when adjusting the plasma in a local area of the substrate (such as adjusting the density or movement speed of the plasma), the radio frequency voltage / current applied to the electrode partition corresponding to the local area of the substrate can be independently controlled, and the high-frequency and low-frequency power applied to each electrode partition can be adjusted separately by adjusting the high-frequency and low-frequency impedances of each electrode partition to the ground terminal, so that the film formation properties (such as film formation rate, film thickness, etc.) of the local area of the substrate can be adjusted, and the uniformity of the film on the substrate surface can be optimized. For example, when the stress in the outer ring of the substrate is relatively high, the capacitor and / or inductor in the low-frequency impedance adjustment circuit of the outer electrode corresponding to the outer ring of the substrate are adjusted to increase the low-frequency impedance of the outer electrode, so that the ion bombardment is weakened, thereby reducing the stress in the outer ring of the substrate, and at the same time not affecting the power applied to the outer electrode by the high-frequency power supply, and the film thickness of the thin film deposited on the substrate surface is not affected.

[0045] The above embodiments are only illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A substrate processing apparatus, characterized in that, Comprising: RF power supplies, including a high-frequency RF power supply and a low-frequency RF power supply; An upper electrode, coupled to the RF power supply; A lower electrode, including a plurality of electrode partitions, and the RF power supply applies power to the plurality of electrode partitions respectively through the upper electrode; A power detection module, configured to detect the high-frequency power and low-frequency power applied by the high-frequency RF power supply and the low-frequency RF power supply to each electrode partition; An electrode impedance adjustment module, configured to adjust the high-frequency impedance and low-frequency impedance of each electrode partition to a ground terminal according to the detection signal of the power detection module.

2. The substrate processing apparatus according to claim 1, wherein During different processes or different stages of the same process of processing a substrate by the substrate processing apparatus, the electrode impedance adjustment module is configured to adjust the impedance values of the high-frequency impedance and / or low-frequency impedance of the lower electrode to the ground terminal, so that a first current applied by the RF power supply to the upper electrode is switched to a second current.

3. The substrate processing apparatus according to claim 2, wherein, The electrode impedance adjustment module is configured to adjust the impedance value of the high-frequency impedance or low-frequency impedance of at least one electrode partition to the ground terminal.

4. The substrate processing apparatus according to claim 2, wherein, The electrode impedance adjustment module is configured to adjust the impedance values of the high-frequency impedance and low-frequency impedance of at least one electrode partition to the ground terminal respectively.

5. The substrate processing apparatus according to claim 1, wherein, The electrode impedance adjustment module includes a high-frequency impedance adjustment circuit and a low-frequency impedance adjustment circuit, and both the high-frequency impedance adjustment circuit and the low-frequency impedance adjustment circuit include capacitors and / or inductors.

6. The substrate processing apparatus according to claim 5, wherein, The capacitor and / or the inductor is adjustable.

7. The substrate processing apparatus according to claim 1, wherein Each electrode partition is respectively coupled to the electrode impedance adjustment module through a switch, and the switch is used to control the on / off of each electrode partition.

8. The substrate processing apparatus according to claim 1, wherein The lower electrode is equally divided.

9. The substrate processing apparatus according to claim 1, wherein The lower electrode includes an inner electrode and at least one outer electrode surrounding the inner electrode, and the inner electrode and the outer electrode are the electrode partitions.

10. The substrate processing apparatus according to claim 9, wherein, There are a plurality of the outer electrodes, and the plurality of outer electrodes are arranged radially outward at intervals in sequence from the outer edge of the inner electrode.

11. The substrate processing apparatus according to claim 9, wherein The inner electrode and / or at least one outer electrode is equally divided.

12. The substrate processing apparatus according to claim 1, wherein The electrode impedance adjustment module includes a plurality of impedance adjustment circuits, and each impedance adjustment circuit includes a high-frequency impedance circuit and a low-frequency impedance circuit connected in parallel with each other, and is respectively used to adjust the high-frequency impedance and low-frequency impedance of each electrode partition to a ground terminal.

13. The substrate processing apparatus according to claim 1, wherein The power detection module includes voltage and current sensors.

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