Diamond anvil cell-based two-dimensional device electric transport test structure and test method thereof

By combining two-dimensional device transfer technology and micro-nano electrode preparation technology on diamond-to-top anvil, the problem of difficulty in conducting electrical transport measurement of two-dimensional material devices on diamond-to-top anvil is solved in the existing technology, and the in-situ electrical transport measurement of two-dimensional devices under high voltage is realized, which improves the convenience and success rate of measurement.

CN120195477APending Publication Date: 2025-06-24UNIV OF SCI & TECH OF CHINA
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Patent Information

Application Number
CN202510196534.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-21
Publication Date
2025-06-24

AI Technical Summary

Technical Problem

The prior art is difficult to conduct electrical transport measurements of precision two-dimensional material devices on diamond anvils.

Method used

A test structure for electrical transport of two-dimensional devices based on diamond-to-top anvil is adopted, including diamond-to-top anvil high-voltage device, two-dimensional device transfer device and micro-nano electrode preparation and transfer device. With these devices, the two-dimensional devices and micro-nano electrodes can be transferred neatly and without loss on the diamond-pair anvil and in-situ electrical transport measurements are performed at high voltage.

Benefits of technology

It realizes in-situ electrical transport measurement of two-dimensional devices under high voltage on diamond anvil, which is more convenient and has a higher success rate than traditional methods.

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Abstract

The invention discloses a diamond anvil cell-based two-dimensional device electric transport test structure and a test method thereof. The test structure comprises a diamond anvil cell high-voltage device, a two-dimensional device transfer device and a micro-nano electrode preparation and transfer device, the two-dimensional device transfer device comprises a two-dimensional device mechanism and a device transfer mechanism; the two-dimensional device mechanism comprises a silicon oxide substrate and a two-dimensional device prepared on the silicon oxide substrate; the device transfer mechanism comprises a glass sheet, a device PDMS layer and a device PPC layer which are arranged layer by layer; the micro-nano electrode transfer device comprises a micro-nano electrode substrate, an electrode PDMS layer, an electrode PPC layer and a micro-nano electrode which are arranged layer by layer; and the prepared two-dimensional device and the micro-nano electrode are neatly and nondestructively transferred to the upper anvil surface of the diamond anvil cell by utilizing a transfer technology, so that the in-situ high-voltage electric transport measurement can be carried out on the two-dimensional device under high voltage.
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Citation Information

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