Tunable absorber based on three-dimensional Dirac semimetal rectangular hole support

Abstract

The invention discloses a tunable absorber based on three-dimensional (3D) Dirac semimetal (DSM) rectangular hole support, and the absorber comprises a metal substrate layer, a polyimide dielectric layer, a semiconductor Si layer, a plurality of SiO2 dielectric layers, and a plurality of 3D DSM layers. Wherein the metal substrate layer, the polyimide dielectric layer, the semiconductor Si layer and the 3D DSM layers are sequentially arranged from bottom to top, the metal substrate layer is arranged on the bottom layer, the 3D DSM layers are arranged on the top layer, and the plurality of 3D DSM layers are arranged at intervals by the plurality of SiO2 dielectric layers. According to the tunable absorber based on three-dimensional Dirac semimetal rectangular hole support provided by the invention, when the bias voltage of each layer of 3D DSM is changed, the absorption peak frequency can be flexibly switched among 220GHz, 345GHz, 460GHz and 650GHz; the three-dimensional Dirac semimetal is simple in structure and good in adjustability, the Fermi level of the three-dimensional Dirac semimetal can be adjusted and controlled by changing the bias voltage of the three-dimensional Dirac semimetal, the absorption frequency and the absorption peak value can be adjusted, and effective adjustment and control can be achieved by changing the incident angle and the polarization angle.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor optoelectronic materials, and particularly to a tunable absorber supported by a three-dimensional Dirac semimetal rectangular hole. Background Art

[0002] Submillimeter wave is an electromagnetic wave located between microwaves and far-infrared waves. Its frequency range is approximately between 300 GHz and 1000 GHz, and its wavelength is between 1.0 millimeter and 0.3 millimeter. Submillimeter waves combine the advantages of microwaves and optical waves. On the one hand, it has good penetration and low energy level similar to microwaves and can penetrate certain non-conductive materials. On the other hand, it has high-resolution characteristics similar to optical waves and is suitable for imaging and spectroscopic analysis. Therefore, submillimeter terahertz waves have great prospects in many applications, such as submillimeter astronomical observations, biomedical sensor detections, and 6G high-speed wireless communications. Water vapor, oxygen, and other gas components in the Earth's atmosphere will have a significant absorption effect on submillimeter waves, causing severe attenuation of the signal during transmission. However, not all submillimeter wave bands are affected to the same extent. In certain specific frequency ranges, such as at 220 GHz, 345 GHz, 460 GHz, and 650 GHz, the atmospheric absorption is relatively small, i.e., the "atmospheric window".

[0003] Metamaterials are artificial materials whose material properties are determined by their structures. By carefully designing periodic or aperiodic microstructures at the sub-wavelength scale, they can provide unprecedented capabilities for the manipulation of electromagnetic waves, such as amplitude, wavefront, phase, and polarization. In addition to the original metamaterial structures, complementary metamaterials can also effectively manipulate the propagation of electromagnetic waves. This design not only simplifies the manufacturing process, reduces costs, but also improves the stability and reliability of the materials. From the perspective of practical applications, in order to enhance the light-matter interaction, it is urgent to develop tunable functional devices with excellent performance, such as absorbers, filters, etc. Currently, emerging three-dimensional Dirac semimetals exhibit excellent characteristics and are widely used in tunable functional devices. The complex conductivity is controlled by changing the Fermi level through chemical doping or applying an additional gate voltage. In addition, compared with graphene, 3D DSM breaks the thickness limit, is more flexible in the device manufacturing process, and is more stable and not easily affected by the environment.

[0004] Patent CN202411681070 disclosed an optically transparent terahertz metamaterial broadband absorber based on all-dielectric materials in 2024. This absorber is composed of multiple periodically arranged units. A single unit uses three layers of all-dielectric materials, namely, a top layer of polydimethylsiloxane, a middle layer of polylactic acid (with a cross-shaped hollow structure), and a bottom layer of zirconium tin oxide thin film layer, jointly constructing a Fabry-Perot cavity. In terms of performance, this absorber has both optical transparency, polarization insensitivity (applicable to X / Y polarization and circularly polarized waves), and wide incident angle adaptability (for example, the Y-polarized wave still maintains high absorption at an incident angle of 60°), and the material thermal stability covers 0 - 55°C. Patent CN202411462015 disclosed a TM-polarized dual-band tunable spectral selective absorber in the THz band and its preparation method in 2024. It mainly consists of a single layer of graphene, a square nanopore array layer, a dielectric thin film layer, an antireflection thin film layer, and a dielectric substrate. When the TM-polarized light in the THz band is incident vertically, dual-band ultra-narrow absorption (full width at half maximum <0.005 THz, absorption efficiency >50%) is achieved at 6.26 THz and 6.32 THz, and the absorption frequency can be dynamically tuned over a wide range. The terahertz absorbers in the aforementioned patents have problems such as a single operating frequency and poor adjustable performance. There is an urgent and extensive demand for absorbers that can achieve flexible switching among multiple frequency bands in practical applications. Summary of the Invention

[0005] In view of the above-mentioned defects of the prior art, the present invention provides a tunable absorber supported by three-dimensional (3D) Dirac semimetal (DSM) rectangular holes. When changing the bias voltage of the 3D DSM in each layer, the absorption peak frequency can be flexibly switched between 220 GHz, 345 GHz, 460 GHz, and 650 GHz; at the same time, it has good tunable performance. The Fermi level can be regulated by changing the bias voltage of the three-dimensional Dirac semimetal, enabling the adjustment of the absorption frequency and absorption peak value, and can also be effectively regulated by changing the incident angle and polarization angle.

[0006] To achieve the above object, the present invention provides a tunable absorber supported by three-dimensional Dirac semimetal rectangular holes, including a metal substrate layer, a polyimide dielectric layer, a semiconductor Si layer, several SiO2 dielectric layers, and several 3D DSM layers; among them, the metal substrate layer, the polyimide dielectric layer, the semiconductor Si layer, and the 3D DSM layer are arranged in sequence from bottom to top, the metal substrate layer is placed at the bottom layer, the 3D DSM layer is placed at the top layer, and several 3D DSM layers are arranged with intervals separated by several SiO2 dielectric layers.

[0007] Furthermore, the 3D DSM layer includes four layers, namely the first 3D DSM layer, the second 3D DSM layer, the third 3D DSM layer, and the fourth 3D DSM layer, and the first 3D DSM layer, the second 3D DSM layer, the third 3D DSM layer, and the fourth 3D DSM layer are arranged successively from bottom to top; the SiO2 dielectric layer includes four layers.

[0008] Furthermore, the four 3D DSM layers are provided with four 3D DSM rectangular hole units, and the thickness is 0.5 μm.

[0009] Furthermore, the rectangular length of the first 3D DSM layer is 430 μm and the width is 90 μm.

[0010] Furthermore, the rectangular length of the second 3D DSM layer is 420 μm and the width is 350 μm.

[0011] Furthermore, the rectangular length of the third 3D DSM layer is 310 μm and the width is 360 μm.

[0012] Furthermore, the rectangular length of the fourth 3D DSM layer is 350 μm and the width is 180 μm.

[0013] Furthermore, the metal substrate layer is set as a copper layer.

[0014] Furthermore, it further includes an electronic control unit for regulating the Fermi level of the 3D DSM so as to adjust the propagation characteristics of the absorber. The positive pole of the electronic control unit is connected to the 3D DSM layer, and the negative pole is connected to the semiconductor Si layer.

[0015] Furthermore, each 3D DSM layer is connected to the positive pole of the electronic control unit and corresponds to regulating a specific frequency point. When it is necessary to activate the target frequency, the Fermi level of the corresponding layer is adjusted to 0.1 eV to activate the response of this frequency point, while keeping other layers at 0 eV in the dielectric state, so as to realize the independent regulation of the target layer.

[0016] Furthermore, the 3D DSM rectangular hole unit is arranged in the middle of the 3D DSM layer.

[0017] Technical effects

[0018] An adjustable absorber based on a three-dimensional Dirac semimetal rectangular hole support proposed by the present invention utilizes four 3D DSM rectangular holes. Under the condition of sub-millimeter wave incidence, when changing the bias voltage of the 3D DSM of each layer, magnetic resonance is generated, and the absorption peak frequency can be freely and quickly switched between 220 GHz, 345 GHz, 460 GHz, and 650 GHz, forming strong resonance absorption, and the peak values are 98.2%, 99.8%, 99.7%, and 97.6% respectively.

[0019] The tunable absorber proposed by the present invention, which is supported by a rectangular hole in a three-dimensional Dirac semimetal, can be effectively regulated by changing the bias voltage to control the Fermi level of the 3D DSM. For example, when the Fermi level of the first 3D DSM layer varies within the range of 0.01 - 0.10 eV, the absorption frequency blueshifts from 180 GHz to 220 GHz at this time, the absorption peak is adjusted within the range of 67.5% - 98.2%, and the modulation depth of the absorption peak is 31.3%.

[0020] The resonance curve of the tunable absorber of the present invention is affected by the incident angle. For example, when the Fermi level of the first 3D DSM layer is 0.10 eV and the Fermi levels of the remaining 3D DSMs are 0 eV, as the incident angle increases from 0° to 90°, the absorption peak is adjusted within the range of 80.0% - 98.2%, and the modulation depth of the absorption peak is 18.5%.

[0021] The resonance curve of the tunable absorber of the present invention is also greatly affected by the polarization angle. The polarization angle of the incident sub-millimeter wave can be adjusted to control the resonance absorption peak frequency and absorption peak value. For example, when the Fermi level of the first 3D DSM layer is 0.10 eV and the Fermi levels of the remaining 3D DSMs are 0 eV, when the polarization angle increases from 0° to 90°, the absorption peak amplitude decreases from nearly perfect absorption, i.e., 98.2%, to zero.

[0022] The following will further illustrate the concept, specific structure and technical effects of the present invention in conjunction with the accompanying drawings to fully understand the purpose, features and effects of the present invention. Brief Description of the Drawings

[0023] Figure 1 is a schematic diagram of a tunable absorber supported by a rectangular hole in a three-dimensional Dirac semimetal according to a preferred embodiment of the present invention;

[0024] Figure 2 is a side view of a tunable absorber supported by a rectangular hole in a three-dimensional Dirac semimetal according to a preferred embodiment of the present invention;

[0025] Figure 3 is a diagram showing the structure of each 3D DSM layer;

[0026] Figure 4 is a diagram showing the absorber in Example 1 at different DSM Fermi levels;

[0027] Figure 5 is a diagram showing the first 3D DSM layer in Example 1 at different Fermi levels;

[0028] Figure 6 is the absorption spectrum of the absorber in Example 1 at different sub-millimeter wave incident angles;

[0029] Figure 7 It is the absorption spectrum of the absorber in Example 1 at different sub-millimeter wave polarization angles.

[0030] Among them, 1 - copper metal layer; 2 - polyimide dielectric layer; 3 - doped Si layer; 4 - SiO2 dielectric layer; A - the first three-dimensional Dirac metal structure layer (3D DSM layer); B - the second three-dimensional Dirac metal structure layer (3D DSM layer); C - the third three-dimensional Dirac metal structure layer (3D DSM layer); D - the fourth three-dimensional Dirac metal structure layer (3D DSM layer). Detailed implementation manners

[0031] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer and more understandable, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0032] In the following description, for the purpose of illustration rather than limitation, specific details such as specific internal programs and technologies are put forward in order to thoroughly understand the embodiments of the present invention. However, those skilled in the art should clearly understand that the present invention can also be implemented in other embodiments without these specific details. In other cases, the detailed descriptions of well-known systems, devices, circuits and methods are omitted to avoid unnecessary details from interfering with the description of the present invention.

[0033] As Figure 1 and 2 shown, the present invention provides a tunable absorber supported by a three-dimensional Dirac semimetal rectangular hole, including a metal substrate layer 1, a polyimide dielectric layer 2, a semiconductor Si layer 3, several SiO2 dielectric layers 4 and several 3D DSM layers; among them, the metal substrate layer 1, the polyimide dielectric layer 2, the semiconductor Si layer 3 and the 3D DSM layers are arranged in sequence from bottom to top, the metal substrate layer is placed at the bottom layer, the 3D DSM layer is placed at the top layer, and several 3D DSM layers are arranged at intervals by several SiO2 dielectric layers 4.

[0034] Further, the 3D DSM layer includes 4 layers, namely the first 3D DSM layer A, the second 3D DSM layer B, the third 3D DSM layer C and the fourth 3D DSM layer D, and the first 3D DSM layer A, the second 3D DSM layer B, the third 3D DSM layer C and the fourth 3D DSM layer D are arranged in sequence from bottom to top; the SiO2 dielectric layer 4 includes 4 layers.

[0035] The 4-layer 3D DSM layer is provided with 4 3D DSM rectangular hole units, and the thickness is 0.5 μm.

[0036] The rectangular hole units of the 3D DSM layer are arranged in the middle of each 3D DSM layer, and the specific structure is as Figure 3 shown. Among them, the length of the rectangular hole in the first 3D DSM layer is 430 μm and the width is 90 μm; the length of the rectangular hole in the second 3D DSM layer is 420 μm and the width is 350 μm; the length of the rectangular hole in the third 3D DSM layer is 310 μm and the width is 360 μm; the length of the rectangular hole in the fourth 3D DSM layer is 350 μm and the width is 180 μm.

[0037] The metal substrate layer is set as a copper layer. The thickness of the polyimide layer is 20 μm - 100 μm, preferably 70 μm. The polyimide dielectric layer provides a resonant cavity for the incident sub-millimeter wave.

[0038] It also includes an electronic control unit, which is used to regulate the Fermi level of the 3D DSM so as to adjust the propagation characteristics of the absorber. The positive electrode of the electronic control unit is connected to the 3D DSM layer, and the negative electrode is connected to the semiconductor Si layer. Each layer of the 3D DSM structure is connected to the positive electrode of the electronic control unit and corresponds to regulating a specific frequency point. When it is necessary to activate the target frequency (such as 220 GHz), the Fermi level of the corresponding layer (such as layer A) is adjusted to 0.1 eV to activate the response of this frequency point, while keeping other layers at 0 eV in the dielectric state, so as to achieve independent regulation of the target layer.

[0039] The present invention uses a 3D DSM material with good tunable performance as the resonant unit structure, and realizes high absorption through the magnetic resonance of the three-dimensional Dirac semimetal rectangular hole.

[0040] The following will use specific embodiments to illustrate a tunable absorber based on a three-dimensional Dirac semimetal rectangular hole of the present invention.

[0041] This embodiment provides a tunable absorber based on a three-dimensional Dirac semimetal rectangular hole, as Figure 1 shown, including a metal substrate layer 1, a polyimide dielectric layer 2, a semiconductor Si layer, a SiO2 dielectric layer 4, 3D DSM structure layers A, B, C, and D connected in sequence. The metal substrate layer is arranged at the bottom layer, and the four 3D DSM layers A, B, C, and D are each separated by a SiO2 dielectric layer. The metal substrate layer is arranged at the bottom layer, which is a copper layer in this embodiment. The 3D DSM layers are arranged on the upper layer, and the connection and combination of each layer are realized through an interlayer bonding method. It also includes an electronic control unit, which is a commonly used product for those skilled in the art and its function is to apply voltage. The positive electrode of the electronic control unit is connected to the 3D DSM structure layers A, B, C, and D, and the negative electrode is connected to the semiconductor Si layer. By applying a bias voltage, the Fermi level of the 3D DSM is changed, so as to realize the regulation of the sub-millimeter wave absorption performance of the absorber. The polyimide dielectric layer 2 provides a resonant cavity for the incident sub-millimeter wave.

[0042] As Figure 1As shown, the metal substrate layer 1 has a thickness of 1 μm; the polyimide dielectric layer 2 has a thickness of 70 μm; the semiconductor Si layer is a doped Si layer 3 with a thickness of 2 μm; the SiO2 dielectric layer 4 has a thickness of 100 nm; the top 3D DSM layer (A, B, C, and D) is composed of four rectangular holes of 3D DSM stacked in sequence and each separated by an SiO2 dielectric layer, with a thickness of 1 μm for all. The rectangle in 3D DSM (A) has a length of 430 μm and a width of 90 μm; the rectangle in 3D DSM (B) has a length of 420 μm and a width of 350 μm; the rectangle in 3D DSM (C) has a length of 310 μm and a width of 360 μm; the rectangle in 3D DSM (D) has a length of 350 μm and a width of 180 μm. The absorber period P is 500 μm.

[0043] As Figure 2 shown, the incident sub-millimeter wave is incident on the absorption surface along the z direction, and the polarization direction is along the x direction.

[0044] As Figure 3 shown, the specific structure of the 3D DSM layer of each layer.

[0045] As Figure 4 shown, as the Fermi level increases, the carrier concentration increases, the metallicity of the three-dimensional Dirac enhances, the resonance enhances, thereby effectively regulating the performance of the absorber. When the Fermi level of 3D DSM (A) varies in the range of 0.01 - 0.10 eV, the absorption frequency blueshifts from 180 GHz to 220 GHz at this time, the absorption peak is adjusted in the range of 67.5% - 98.2%, and the modulation depth of the absorption peak is 31.3%; when the Fermi level of 3D DSM (B) varies in the range of 0.01 - 0.10 eV, the absorption frequency blueshifts from 332 GHz to 345 GHz at this time, the absorption peak is adjusted in the range of 67.7% - 99.8%, and the modulation depth of the absorption peak is 32.2%; when the Fermi level of 3D DSM (C) varies in the range of 0.01 - 0.10 eV, the absorption frequency blueshifts from 424 GHz to 460 GHz at this time, the absorption peak is adjusted in the range of 75.7% - 99.7%, and the modulation depth of the absorption peak is 24.1%; when the Fermi level of 3D DSM (D) varies in the range of 0.01 - 0.10 eV, the absorption frequency blueshifts from 634 GHz to 650 GHz at this time, the absorption peak is adjusted in the range of 51.1% - 97.6%, and the modulation depth of the absorption peak is 47.6%.

[0046] As Figure 5 shown, in order to understand the influence of the change of the Fermi level on the absorption spectrum, taking the case where the Fermi level of 3D DSM (A) varies in the range of 0.01 - 0.10 eV as an example, the surface current density, electric field, and magnetic field distributions at different Fermi level values are shown in the figure. As Figure 5(e - h) and 5(i - l), both the upper and lower parts of the resonator shown are excited in opposite directions, and as the Fermi level increases, the 3D DSM shows better plasmonic properties, resulting in a stronger mode field distribution. And as Figure 5 shown clearly in (a - d), the surface current intensity at 0.10 eV is stronger than that at 0.01 eV.

[0047] As Figure 6 shown, when the Fermi level of 3D DSM (A) is 0.10 eV and the Fermi levels of the remaining 3D DSMs are 0 eV, as the incident angle increases from 0° to 90°, the absorption peak maintains a high absorption rate with only slight changes, and the absorption peak value is adjusted within the range of 80.0% - 98.2%, and the modulation depth of the absorption peak is 18.5%; while when 3D DSM (B) comes into play, as the incident angle increases from 0° to 45°, the absorption peak value is adjusted within the range of 15.5% - 99.8%, and the modulation depth of the absorption peak is 84.5%; while when 3D DSM (C) comes into play, as the incident angle increases from 0° to 60°, the modulation depth of the absorption peak is 15.2%; while when 3D DSM (D) comes into play, as the incident angle increases from 0° to 45°, the modulation depth of the absorption peak is 88.90%.

[0048] As Figure 7 shown, the sub - millimeter - wave polarization angle is the angle ψ between the direction of the incident sub - millimeter - wave electric field and the x - direction. The resonance curve of the absorber is also affected by the polarization angle. When the Fermi level of 3D DSM (A) is 0.10 eV and the Fermi levels of the remaining 3D DSMs are 0 eV, as the polarization angle increases from 0° to 90°, the absorption peak value is adjusted within the range of 0% - 98.2%, and the modulation depth of the absorption peak is 98.2%, with a relatively large influence; while when 3D DSM (B) comes into play, as the polarization angle increases from 0° to 90°, the absorption peak value is adjusted within the range of 17.2% - 99.8%, and the modulation depth of the absorption peak is 82.8%; while when 3D DSM (C) comes into play, as the polarization angle increases from 0° to 90°, the modulation depth of the absorption peak is 7.14%, and there is a redshift phenomenon of the frequency from 430 - 460 GHz; while when 3D DSM (D) comes into play, as the polarization angle increases from 0° to 90°, the absorption peak maintains a high absorption rate with only slight blueshift changes in frequency.

[0049] In this embodiment, four stacked three-dimensional Dirac semimetal rectangular holes are utilized. Under the condition of submillimeter wave incidence, when the bias voltage of the 3D DSM in each layer is changed, the absorption peak frequency can be freely and rapidly switched between 220 GHz, 345 GHz, 460 GHz, and 650 GHz, forming strong resonance absorption. And the resonance curve can be appropriately regulated by changing the Fermi level. For example, when the Fermi level of the 3D DSM (A) is changed by 0.01 - 0.10 eV, the modulation depth is 31.3%. In addition, the absorber exhibits angle sensitivity to the incident angle and polarization angle.

[0050] A rectangular hole absorber based on three-dimensional Dirac semimetal proposed in the embodiment of the present invention belongs to complementary metamaterials. Complementary metamaterials simplify the manufacturing process and improve stability through inverse design (such as hole or hollow structure), which is usually related to extraordinary optical transmission (EOT), that is, in the subwavelength hole array of a metal or metal-like thin film, the incident electromagnetic wave couples with the surface plasmon polaritons (SPPs) or local resonance at the hole edge, resulting in the transmittance in a specific frequency band being much higher than the value predicted by the classical aperture theory. Using this structure can also effectively achieve perfect absorption, and has characteristics such as complementary frequency bands and strong electric field sensitivity, that is, using the complementary structure of the 3D DSM rectangular hole to achieve high absorption efficiency (peak > 97%) at the target frequency. And through the use of the independent bias voltage regulation technology of four 3D DSM layers, the absorption peak frequency can be dynamically switched between 220 GHz, 345 GHz, 460 GHz, and 650 GHz.

[0051] A rectangular hole absorber based on three-dimensional Dirac semimetal provided by the present invention belongs to complementary metamaterials. Through the independent bias voltage control of the four-layer 3D DSM rectangular hole, the Fermi level of each layer can be independently adjusted (0 - 0.10 eV), so as to achieve rapid switching of four absorption peaks in four frequency bands within the range of 220 - 650 GHz, and independent regulation within the four frequency bands. For example, when the Fermi level of the first 3D DSM layer varies within the range of 0.01 - 0.10 eV, at this time the absorption frequency blueshifts from 180 GHz to 220 GHz, the absorption peak value is adjusted within the range of 67.5% - 98.2%, and the modulation depth of the absorption peak is 31.3%.

[0052] The preferred specific embodiments of the present invention have been described in detail above. It should be understood that those of ordinary skill in the art can make many modifications and variations according to the concept of the present invention without creative labor. Therefore, all technical solutions that can be obtained by those skilled in the art in the technical field of the present invention based on the concept of the present invention through logical analysis, reasoning, or limited experiments on the basis of the existing technology should be within the protection scope determined by the claims.

Claims

1. A tunable absorber based on a three-dimensional Dirac semimetal rectangular hole support, characterized in that: It includes a metal substrate layer, a polyimide dielectric layer, a semiconductor Si layer, a plurality of SiO2 dielectric layers and a plurality of 3D DSM layers; wherein the metal substrate layer, the polyimide dielectric layer, the semiconductor Si layer and the 3D DSM layer are arranged in sequence from bottom to top, the metal substrate layer is placed at the bottom layer, the 3D DSM layer is placed at the top layer, and the plurality of 3D DSM layers are arranged separated by the plurality of SiO2 dielectric layers.

2. A tunable absorber based on a three-dimensional Dirac semi-metal rectangular hole support as claimed in claim 1, characterized in that: The 3D DSM layer includes 4 layers, namely a first 3D DSM layer, a second 3D DSM layer, a third 3D DSM layer and a fourth 3D DSM layer, and the first 3D DSM layer, the second 3D DSM layer, the third 3D DSM layer and the fourth 3D DSM layer are arranged sequentially from bottom to top; the SiO2 dielectric layer includes 4 layers.

3. A tunable absorber based on a three-dimensional Dirac semi-metal rectangular hole support as claimed in claim 2, characterized in that: The 4-layer 3D DSM layer is configured with 4 3D DSM rectangular hole units and has a thickness of 0.5 μm.

4. A tunable absorber based on a three-dimensional Dirac semi-metal rectangular hole support as claimed in claim 3, characterized in that: The first 3D DSM layer has a rectangular length of 430 μm and a width of 90 μm.

5. The tunable absorber based on three-dimensional Dirac semi-metal rectangular hole support as claimed in claim 3, characterized in that: The second 3D DSM layer has a rectangular length of 420 μm and a width of 350 μm.

6. The tunable absorber based on three-dimensional Dirac semi-metal rectangular hole support as claimed in claim 3, characterized in that: The rectangular length of the third 3D DSM layer is 310 μm and the width is 360 μm.

7. The tunable absorber based on three-dimensional Dirac semi-metal rectangular hole support as claimed in claim 3, characterized in that: The fourth 3D DSM layer has a rectangular length of 350 μm and a width of 180 μm.

8. The tunable absorber based on three-dimensional Dirac semi-metal rectangular hole support as claimed in claim 1, characterized in that: It also includes an electric control unit for regulating the Fermi level of the 3D DSM to adjust the propagation characteristics of the absorber. The positive electrode of the electric control unit is connected to the 3D DSM layer, and the negative electrode is connected to the semiconductor Si layer.

9. The tunable absorber based on three-dimensional Dirac semi-metal rectangular hole support as claimed in claim 8, characterized in that: Each 3D DSM layer is connected to the positive electrode of the electronic control unit and corresponds to a specific frequency point for regulation. When the target frequency needs to be activated, the Fermi level of the corresponding layer is adjusted to 0.1eV to activate the frequency point response, while keeping the other layers at 0eV in a dielectric state, thereby achieving independent regulation of the target layer.

10. The tunable absorber based on three-dimensional Dirac semi-metal rectangular hole support as claimed in claim 3, characterized in that: The 3D DSM rectangular hole unit is disposed in the middle of the 3D DSM layer.

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