Semiconductor component cleaning device and cleaning method thereof

Abstract

The invention discloses a cleaning device and method for semiconductor parts. The cleaning device comprises an outer pipe and an inner pipe which are coaxial. The bottom of the outer tube comprises an outer edge, and the outer edge is used for being attached to a semiconductor part; the inner pipe is sleeved with the outer pipe, a cavity is formed between the outer side wall of the inner pipe and the inner side wall of the outer pipe, and the interior of the cavity communicates with the inner space of the inner pipe; the solution source is communicated with the inner space of the inner pipe through a first solution input pipeline and used for inputting a solution into the inner space of the inner pipe, and gas is dissolved in the solution; and the first vacuum pump communicates with the cavity and is used for reducing the pressure in the cavity, so that part of gas in the solution escapes, a high-pressure gas-liquid mixture is formed on the surface of the semiconductor part, and the high-pressure gas-liquid mixture is used for cleaning the semiconductor part. The cleaning device is high in universality and good in cleaning effect.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and particularly to a cleaning device for semiconductor components and a cleaning method thereof. Background Art

[0002] With the breakthrough of the integrated circuit manufacturing technology node towards the 3nm process, the requirement for the cleaning degree in the reaction chamber of plasma processing equipment is getting higher and higher. The particulate contaminants appearing in the reaction chamber will greatly affect the processing accuracy of the substrate or cause critical defects on the surface of the substrate, further affecting the yield of substrate processing.

[0003] Currently, the cleaning of semiconductor components is usually carried out by means of a tank-type treatment method of impregnating with an acid or alkali solution of a certain ratio and ultrasonic cleaning with ultrapure water. This tank-type cleaning requires a large amount of cleaning liquid and a large amount of reagents, and the ultrasonic energy is not easily reached at the corners or blind holes of special-shaped components, so the cleaning effect on special-shaped components is limited. For components such as gas spray heads with many small through holes, a sealing jig matching the components is usually used, and the through holes are cleaned by introducing high-pressure water or a mixed fluid of high-pressure water and clean air (nitrogen). This pressure cleaning method requires customizing special jigs for components of different shapes and sizes, and the jigs for different components cannot be shared.

[0004] Therefore, there is an urgent need for a cleaning device for semiconductor components, which is not limited by the shape of the semiconductor components, has universality, and has a good cleaning effect. Summary of the Invention

[0005] The technical problem solved by the present invention is to provide a cleaning device for semiconductor components and a cleaning method thereof to meet the cleaning requirements of semiconductor components of different shapes, with high universality and good cleaning effect.

[0006] To solve the above technical problem, the present invention provides a cleaning device for semiconductor components, including: an outer tube, the bottom of which includes an outer edge for fitting with a semiconductor component; an inner tube sleeved inside the outer tube, a cavity is formed between the outer side wall of the inner tube and the inner side wall of the outer tube, and the inside of the cavity is communicated with the internal space of the inner tube; a solution source is communicated with the internal space of the inner tube through a first solution input pipeline for inputting a solution into the internal space of the inner tube, and a gas is dissolved in the solution; a first vacuum pump is communicated with the cavity for reducing the pressure in the cavity, so that part of the gas in the solution escapes, and a high-pressure gas-liquid mixture is formed on the surface of the semiconductor component, and the high-pressure gas-liquid mixture is used for cleaning the semiconductor component.

[0007] Optionally, between the solution source and the first solution input pipe, there are also a high-pressure pump and a connector. Two ends of the first solution input pipe are respectively communicated with the inner pipe and the connector. Between the high-pressure pump and the connector, there is also a first hose which is communicated with the first solution input pipe. Between the high-pressure pump and the solution source, there is also a second solution input pipe.

[0008] Optionally, the first vacuum pump is communicated with the cavity through a first gas-liquid output pipe. There is also a gas-liquid separation tank which is communicated with the first vacuum pump through a second hose, a gas tank which is communicated with the gas-liquid separation tank through a gas delivery pipe, and a liquid tank which is communicated with the gas-liquid separation tank through a liquid delivery pipe.

[0009] Optionally, when the semiconductor component includes a through hole penetrating its thickness, the outer pipe includes an upper part of the outer pipe and a lower part of the outer pipe. The inner pipe is sleeved inside the upper part of the outer pipe. The upper part of the outer pipe has an upper outer edge, and the lower part of the outer pipe has a lower outer edge. The semiconductor component is arranged between the upper part of the outer pipe and the lower part of the outer pipe. The upper outer edge and the lower outer edge are used to respectively fit with the upper and lower surfaces of the semiconductor component.

[0010] Optionally, the cross-sectional area of the inner pipe is greater than or equal to the cross-sectional area of the through hole.

[0011] Optionally, there are also a second gas-liquid output pipe and a third hose. The second gas-liquid output pipe and the third hose are communicated through a second vacuum pump. Two ends of the second gas-liquid output pipe are respectively communicated with the lower part of the outer pipe and the second vacuum pump. The second vacuum pump and the first gas-liquid output pipe are communicated through a third hose.

[0012] Optionally, when the cross-sectional area of the outer pipe is smaller than the surface area of the semiconductor component, there are also a power device and a clamping tool. The clamping tool clamps the outer side wall of the outer pipe. The clamping tool is connected to the power device and is used to move the relative positions of the outer pipe and the inner pipe on the surface of the semiconductor component. During the movement, the relative positional relationship between the outer pipe and the inner pipe remains unchanged.

[0013] Optionally, the power device can move the outer pipe and the inner pipe along the X direction, the Y direction and the Z direction. The X direction and the Y direction are parallel to the surface of the semiconductor component, and the Z direction is perpendicular to the surface of the semiconductor component.

[0014] Optionally, the first solution input pipe is communicated with the top of the inner pipe.

[0015] Optionally, when the outer edge fits with the semiconductor component, there is a gap between the bottom of the inner pipe and the semiconductor component. The gap is communicated with the cavity.

[0016] Optionally, the outer edge surface facing the semiconductor component further includes: a seal for sealing the outer edge and the semiconductor component.

[0017] Optionally, the inner tube and the outer tube are coaxially arranged.

[0018] Correspondingly, the present invention further provides a method for cleaning a semiconductor component, including: providing the above cleaning device; bringing the outer edge into contact with the surface of a semiconductor component; after the contact, conveying the solution in the solution source to the inner space of the inner tube through the first solution input pipe; turning on the first vacuum pump to reduce the pressure in the cavity, so that part of the gas in the solution escapes, and a high-pressure gas-liquid mixture is formed on the surface of the semiconductor component, and the high-pressure gas-liquid mixture can clean the surface of the semiconductor component.

[0019] Optionally, when the cross-sectional area of the outer tube is smaller than the surface area of the semiconductor component, the cleaning device further includes: a power device for moving the relative positions of the outer tube and the inner tube on the surface of the semiconductor component, and during the movement, the relative positional relationship between the outer tube and the inner tube remains unchanged; the method for cleaning the semiconductor component further includes: using the power device to move the relative positions of the outer tube and the inner tube on the surface of the semiconductor component so that the entire surface of the semiconductor component is cleaned.

[0020] Optionally, when the semiconductor component includes a through hole, the outer tube includes an upper part and a lower part of the outer tube, the inner tube is sleeved inside the upper part of the outer tube, the cleaning device further includes: a second gas-liquid output pipe and a second vacuum pump, and the second vacuum pump is connected to the lower part of the outer tube through the second gas-liquid output pipe; the method for cleaning the semiconductor component further includes: turning on the second vacuum pump so that part of the gas in the solution escapes, and a high-pressure gas-liquid mixture is formed on the inner surface of the through hole, and the high-pressure gas-liquid mixture can clean the inner surface of the through hole.

[0021] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0022] In the cleaning device for semiconductor components provided by the technical solution of the present invention, the inner tube is sleeved in the outer tube and is coaxial with the outer tube. A cavity is formed between the outer side wall of the inner tube and the inner side wall of the outer tube, and the inside of the cavity is communicated with the inner space of the inner tube. The first vacuum pump is connected to the cavity and is used to reduce the pressure in the cavity, so that the liquid in the inner tube suddenly drops in pressure when flowing to the bottom of the inner tube, and the gas in the solution escapes to form a high-pressure gas-liquid mixture, and the high-pressure gas-liquid mixture can clean the surface of the semiconductor component.

[0023] Further, it further includes: a power device and a clamping tool. The clamping tool is used to clamp the outer sidewall of the outer tube. The clamping tool is connected to the power device, and the power device is used to provide a driving force to the clamping tool to drive the outer tube and the inner tube to move along the X direction and the Y direction on the surface of the semiconductor component, so as to realize the cleaning of each position on the surface of the semiconductor component. Moreover, since the outer tube and the inner tube can move along the X direction and the Y direction, the cleaning device is not limited by the shape and size of the semiconductor component, and can realize the cleaning of the semiconductor component. There is no need to adaptively change the cleaning device due to the different sizes of the semiconductor components, that is: the cleaning device can realize the cleaning of semiconductor components with different shapes and different sizes, has high universality, and has a good cleaning effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a schematic structural diagram of a cleaning device for a semiconductor component of the present invention;

[0025] Figure 2 is a schematic structural diagram of another cleaning device for a semiconductor component of the present invention;

[0026] Figure 3 is Figure 2 schematic cross-sectional structure diagram of a semiconductor component;

[0027] Figure 4 is a schematic structural diagram of a semiconductor processing device of the present invention;

[0028] Figure 5 is a schematic structural diagram of another semiconductor processing device of the present invention;

[0029] Figure 6 is a flowchart of a method for cleaning a semiconductor component of the present invention;

[0030] Figure 7 is a schematic diagram of a moving trajectory of nozzle 1 of the present invention;

[0031] Figure 8 is a top view of the outer tube and the semiconductor component. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0032] As described in the background art, the existing cleaning devices for semiconductor components are limited by the shape of the semiconductor components, the cleaning devices for different components cannot be shared, and the cleaning effect is not good.

[0033] To solve the above technical problems, the technical solution of the present invention provides a cleaning device for semiconductor components. Through an inner tube and an outer tube which are sleeved inside and outside, a solution is input into the inner tube, and the outer tube is connected to a vacuum pump to reduce the pressure in the cavity between the inner tube and the outer tube, so that some gases in the solution are released to form a high-pressure gas-liquid mixture for cleaning the pollutants on the surface of the semiconductor components.

[0034] To make the above objects, features, and beneficial effects of the present invention more obvious and understandable, the following detailed description of the specific embodiments of the present invention will be given with reference to the accompanying drawings.

[0035] In a plasma processing device, particulate contaminants are likely to accumulate on the surface of the semiconductor component and in the through holes of the semiconductor component. The main reasons for generating these particulate contaminants include:

[0036] 1) In order to resist plasma corrosion on the surface of semiconductor components, a corrosion-resistant coating is usually applied to the surface of semiconductor components. If the bonding force between the corrosion-resistant coating and the semiconductor component is insufficient, particulate contaminants will be generated. For example: The showerhead is one of the core components of a plasma processing device for plasma dry etching. Process gases are uniformly supplied into the reaction chamber through the gas holes of the showerhead. Since process gases are usually highly corrosive gases, a ceramic coating is usually used to protect the showerhead to improve its corrosion resistance. The ceramic coating of the showerhead is usually manufactured by processes such as physical vapor deposition (PVD), chemical vapor deposition (CVD), or plasma spraying. During the deposition process of the ceramic coating, the ceramic is not only deposited on the surface of the showerhead but also deposited into the through holes. Due to the contact angle of the ceramic deposits with the inner wall of the through holes, the bonding force between the ceramic coating deposited in the through holes and the inner wall of the through holes is relatively weak. Especially after the device has been operating for a period of time, ceramic particulate contaminants are likely to fall off.

[0037] 2) During the process manufacturing, a lot of by-products will be generated with the reaction of process gases and different dielectric layers on the substrate surface. These by-products are likely to form particulate contaminants. Part of these particulate contaminants are pumped out of the reaction chamber by the vacuum pump, but some are left in the reaction chamber, which may accumulate on the surface of the semiconductor component or may be deposited in the through holes of the semiconductor component. These particulate contaminants will fall off at any time and contaminate the substrate.

[0038] Since the above particulate contaminants will greatly affect the quality of the substrate if they fall on the surface of the substrate, it is necessary to regularly clean these particulate contaminants to meet the cleanliness requirements in the reaction chamber. The following is a detailed description of the cleaning device:

[0039] Figure 1 It is a schematic structural diagram of a cleaning device for a semiconductor component of the present invention.

[0040] Please refer to Figure 1 , the cleaning device 100 for semiconductor components includes: an outer tube 105, the bottom of which includes an outer edge 111 for fitting with the semiconductor component 150; an inner tube 104 sleeved inside the outer tube 105, a cavity 106 is formed between the outer side wall of the inner tube 104 and the inner side wall of the outer tube 105, and the inside of the cavity 106 is communicated with the inner space of the inner tube 104; a solution source 101 communicated with the inner space of the inner tube 104 through a first solution input pipeline 120 for inputting a solution into the inner space of the inner tube 104, and a gas is dissolved in the solution; a first vacuum pump 107 communicated with the cavity 106 for reducing the pressure in the cavity 106, so that part of the gas in the solution escapes, and a high-pressure gas-liquid mixture is formed on the surface of the semiconductor component 150, and the high-pressure gas-liquid mixture is used for cleaning the surface of the semiconductor component 150.

[0041] In this embodiment, the solution includes: carbon dioxide aqueous solution, chlorine aqueous solution or ammonia water. The mass concentration range of the solution in the inner tube 104 is 30%-70%, and optionally, the mass concentration range of the solution in the inner tube 104 is 40%-60%.

[0042] The materials of the inner tube 104 and the outer tube 105 are stainless steel or stainless steel lined with polytetrafluoroethylene. The materials of the inner tube 104 and the outer tube 105 can withstand the corrosion of the solution. The outer edge 111 of the outer tube 105 facing the surface of the semiconductor component 150 further includes: a seal (not shown in the figure) for sealing the outer edge 111 and the semiconductor component 150.

[0043] It should be noted that Figure 1 The arrow in represents the flow direction of the solution. The solution flows out from the solution source 101 and enters the inner tube 104 through the first solution input pipeline 120. Since there is a certain gap between the bottom of the inner tube 104 and the surface of the semiconductor component 150, therefore, the gap is communicated with the cavity 106, and the cavity 106 is connected to a first vacuum pump 107 for reducing the pressure in the cavity 106, and the pressure in the cavity is less than 100 Pa; correspondingly, the pressure at the gap is also reduced, and the pressure of the solution will drop suddenly when flowing from the bottom of the inner tube 104 to the gap. Since the solubility of the gas is closely related to the pressure, when the pressure decreases, the solubility of the gas in the solution decreases. Therefore, a large amount of gas will escape from the solution, and a high-pressure gas mixture fluid will be formed on the surface of the semiconductor component 150. The high-pressure gas mixture fluid has a strong impact force and can achieve the cleaning effect on the surface of the semiconductor component 150.

[0044] In this embodiment, between the solution source 101 and the first solution input pipeline 120, there are further included: a high-pressure pump 130 and a joint 115. Both ends of the first solution input pipeline 120 are communicated with the inner tube 104 and the joint 115 respectively. Between the high-pressure pump 130 and the joint 115, there is further included: a first hose 103, which is communicated with the first solution input pipeline 120. Between the high-pressure pump 130 and the solution source 101, there is further included: a second solution input pipeline 102. After flowing out from the liquid source 101, the liquid sequentially passes through the second solution input pipeline 102, the high-pressure pump 130, the first hose 103, the joint 115, and the first liquid input pipeline 120, and enters the inner tube 104.

[0045] In this embodiment, the first solution input pipeline 120 and the inner tube 104 are integrally formed, that is: the top of the outer tube 105 has a through opening, and the inner tube 104 is partially inserted into the interior of the outer tube 105 through the opening. The part located outside above the outer tube 105 is the first solution input pipeline. Actually, the first solution input pipeline 120 and the inner tube 104 can also be of a split type, as long as they are communicated with each other.

[0046] In addition, in this embodiment, the top of the first solution input pipeline 120 is communicated with the inner tube 104. Actually, the communication position between the first solution input pipeline 120 and the inner tube 104 is not limited. For example, the first solution input pipeline 120 is communicated with the side wall of the inner tube 104.

[0047] Define the first solution input pipeline 120, the inner tube 104, and the outer tube 105 as the nozzle 1. Since the part between the high-pressure pump 130 and the joint 115 is the first hose 103, when performing a sweeping cleaning on the surface of the semiconductor component 150, the relative position of the nozzle 1 on the semiconductor component 150 can be changed by changing the shape of the first hose 103, so as to realize the cleaning of different areas of the semiconductor component 150.

[0048] The first vacuum pump 107 is communicated with the cavity 106 through a first gas-liquid output pipeline 113; there is further included: a gas-liquid separation tank 108, which is communicated with the first vacuum pump 107 through a second hose 112; a gas tank 109, which is communicated with the gas-liquid separation tank 108 through a gas delivery pipeline 116; a liquid tank 110, which is communicated with the gas-liquid separation tank 108 through a liquid delivery pipeline 117.

[0049] The cleaning device further includes: a power device (not shown in the figure) and a clamping tool (not shown in the figure). The clamping tool clamps the outer wall of the outer tube 105. The clamping tool is connected to the power device and is used to move the relative position of the nozzle 1 on the surface of the semiconductor component 150. During the movement, the relative positional relationship between the outer tube 105 and the inner tube 104 remains unchanged.

[0050] Since the second hose 112 is provided between the gas-liquid separation tank 108 and the first vacuum pump 107, and the first hose 103 is provided between the high-pressure pump 130 and the joint 115, the first hose 103 and the second hose 112 can be bellows. The clamping tool clamps the outer wall of the outer tube 105, and the power device drives the clamping tool to move. For example, the power device drives the clamping tool to move in the X direction or in the Y direction. During the movement, the first hose 103 and the second hose 112 can be bent arbitrarily. Moreover, the lengths of the first hose 103 and the second hose 112 are adapted to the size of the semiconductor component 150, so that by moving the first hose 103 and the second hose 112 to change their shapes, while keeping the positions of the solution source 101, the second solution input pipeline 102, the high-pressure pump 130, the gas-liquid separation tank 108, the gas delivery pipeline 116, the gas tank 109, the liquid delivery pipeline 117, and the liquid tank 110 unchanged, only the relative position of the nozzle 1 on the semiconductor component 150 is changed, thereby realizing the cleaning of different areas of the semiconductor component 150.

[0051] In addition, it should be noted that the power device can also drive the clamping tool to move up and down, that is, to move along the Z direction, so as to realize the sealing between the outer edge 111 and the semiconductor component 150.

[0052] The power device can be: a manipulator.

[0053] Figure 1 The shown cleaning device is applicable to cleaning the surface of semiconductor components.

[0054] Figure 2 It is a schematic structural diagram of another cleaning device for semiconductor components of the present invention.

[0055] In this embodiment, the liquid source 201, the second solution input pipeline 202, the high-pressure pump 230, the first hose 203, the joint 215, the first solution input pipeline 220, the inner tube 104, the first vacuum pump 207, the first gas-liquid output pipeline 213, the cavity 206, the gas-liquid separation tank 208, the second hose 212, the gas tank 209, the gas delivery pipeline 216, the liquid tank 210, and the liquid delivery pipeline 217 are Figure 1 the same as those in the embodiment, and will not be elaborated here.

[0056] In this embodiment, the semiconductor component 250 has a through hole 251 penetrating its thickness. The outer tube includes an upper outer tube portion 205a and a lower outer tube portion 205b. The inner tube 204 is sleeved inside the upper outer tube portion 205a. The upper outer tube portion 205a has an upper outer edge, and the lower outer tube portion 205b has a lower outer edge. The semiconductor component 250 is disposed between the upper outer tube portion 205a and the lower outer tube portion 205b. The upper outer edge and the lower outer edge are used to respectively fit with the upper and lower surfaces of the semiconductor component 250. The cleaning device further includes: a second gas-liquid output pipeline 211 and a third hose 240. The second gas-liquid output pipeline 211 is communicated with the third hose 240 through a second vacuum pump 260. Two ends of the second gas-liquid output pipeline 211 are respectively communicated with the lower outer tube portion 205b and the second vacuum pump 260. The second vacuum pump 260 is communicated with the first gas-liquid output pipeline 212 through a third hose 240.

[0057] When the solution enters the inner tube 204 from the solution source 201 through the second solution input pipeline 202, the high-pressure pump 230, the first hose 203, and the first solution input pipeline 220. Since there is a certain gap between the bottom of the inner tube 204 and the surface of the semiconductor component 250, the gap is communicated with the cavity 206, and the cavity 206 is connected to the first vacuum pump 207 and the second vacuum pump 260. The first vacuum pump 207 and the second vacuum pump 260 are used to reduce the pressure in the cavity 206, so that gas escapes due to the sudden drop in pressure at the gap between the bottom of the inner tube 204 and the surface of the semiconductor component 250, forming a high-pressure gas-liquid mixture. The high-pressure gas-liquid mixture can flush the contaminants on the surface of the semiconductor component 250 and the inner surface of the through hole 251.

[0058] In this embodiment, the nozzle not only includes the first solution input pipeline 120, the inner tube 104, the outer tube 105, and the first gas-liquid output pipeline 213, but also includes: the second gas-liquid output pipeline 211.

[0059] The cleaning device further includes: a power device (not shown in the figure) and a clamping tool (not shown in the figure). The clamping tool clamps the outer side wall of the outer tube. The clamping tool is connected to the power device and is used to move the relative position of the nozzle on the surface of the semiconductor component 250. During the movement, the relative positional relationship between the outer tube and the inner tube 204 remains unchanged.

[0060] Since the first hose 203, the second hose 212, and the third hose 240 can be corrugated hoses, the clamping tool can be driven by the power device, so that the shapes of the first hose 203, the second hose 212, and the third hose 240 can be bent arbitrarily, thereby realizing the movement of the nozzle along the X direction or the Y direction on the surface of the semiconductor component 250, and thus realizing the cleaning of various positions of the semiconductor component.

[0061] In this embodiment, in order to better clean the contaminants on the inner side wall of the through hole 251, the cross-sectional area of the inner tube 204 is greater than or equal to the cross-sectional area of the through hole 251. However, during the cleaning process, it is not necessary to accurately position the inner tube 204. For example, it is not necessary to make the inner tube 204 completely cover the through hole 251. It is only necessary that the inner tube 204 partially covers the through hole 251, because the cleaning device according to the present invention can move along the X direction or the Y direction. Therefore, even if the inner tube 204 does not cover the through hole 251 and cannot be cleaned this time, when the inner tube 204 moves to be opposite to the previously uncovered through hole 251, it can be cleaned. Therefore, it is simpler to use.

[0062] It should be noted that the power device in this embodiment can also drive the clamping tool to move up and down, that is, move along the Z direction, so as to realize the seal between the outer edge and the semiconductor component 250.

[0063] Figure 2 The shown cleaning device is applicable to the semiconductor component 250 having a through hole 251, such as Figure 3 shown Figure 2 The shown cleaning device can not only clean the surface of the semiconductor component, but also clean the inner side wall of the through hole of the semiconductor component.

[0064] The semiconductor components applicable to the present invention are described in detail as follows:

[0065] Please refer to Figure 4, the semiconductor processing apparatus provided by the present invention is a capacitively coupled plasma (CCP) reaction apparatus. The capacitively coupled plasma reaction apparatus includes: a vacuum reaction chamber 401, a gas showerhead 420 is disposed in the vacuum reaction chamber 401, the gas showerhead 420 is connected to a gas supply device 430, and the gas supply device 430 transports reaction gas to the vacuum reaction chamber through a gas pipeline 425 and simultaneously serves as the upper electrode of the vacuum reaction chamber. A susceptor 410 is disposed in the reaction chamber opposite to the gas showerhead 420, and the susceptor 410 is used to support and fix the substrate W to be processed during the process. The susceptor 410 simultaneously serves as the lower electrode of the vacuum reaction chamber, and a reaction region is formed between the upper electrode and the lower electrode. At least one radio frequency power supply 450 is applied to one of the upper electrode or the lower electrode through a matching network 452 to generate a radio frequency electric field between the upper electrode and the lower electrode, so as to dissociate the reaction gas into plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. The above-mentioned active particles can undergo various physical and chemical reactions with the surface of the substrate W to be processed, causing the morphology of the surface of the substrate W to be processed to change, that is, the etching process is completed.

[0066] The capacitively coupled plasma reaction apparatus further includes: a mounting substrate 422 disposed above the gas showerhead 420, mounting through holes 421 are provided in the mounting substrate 422, and the mounting through holes 421 communicate with the through holes 424 in the gas showerhead 420. And, the temperature of the mounting substrate 422 needs to be controlled. Therefore, a heater and a cooling channel are also provided in the mounting substrate 422, and the cooling channel is used to transport coolant. In addition, a susceptor cooling channel 460 is provided in the susceptor 410, and the susceptor cooling channel 460 is used to transport coolant to cool the susceptor 410, and there is also a heat transfer channel in the susceptor 410, and the heat transfer channel is used to transport a heat-conducting gas, for example: helium, to control the temperature of the substrate W to be processed.

[0067] In this embodiment, the semiconductor component can be at least one of the gas showerhead 420, the mounting substrate 422, or the susceptor 410. Correspondingly, the through holes to be cleaned are the cooling channels or the mounting through holes 421 in the mounting substrate 422, the through holes 424 in the gas showerhead 420, the susceptor cooling channel 460 or the heat transfer channel in the susceptor 410.

[0068] Please refer to Figure 5, the semiconductor processing apparatus provided by the present invention is an inductively coupled plasma (ICP) reaction apparatus. The inductively coupled plasma reaction apparatus includes: a vacuum reaction chamber 501, a lining 520 is provided on the side wall of the vacuum reaction chamber 501, and a gas nozzle 503 is provided on the lining 520. An insulating window 517 is provided at the top of the vacuum reaction chamber 501, an inductively coupled coil 515 is connected to the insulating window 517, and a radio frequency power source 518 applies a radio frequency voltage to the inductively coupled coil 515 through a radio frequency matching network 516. The radio frequency power of the radio frequency power source 518 drives the inductively coupled coil 515 to generate a strong high-frequency alternating magnetic field, so that the reaction gas at low pressure in the reaction chamber is ionized to generate plasma. A pedestal 510 is provided at the bottom in the vacuum reaction chamber 501, and the pedestal 510 is used to support and fix the substrate W to be processed during the process. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above active particles can undergo various physical and chemical reactions with the surface of the substrate W to be processed, so that the surface topography of the substrate W to be processed is changed, that is, the etching process is completed.

[0069] A pedestal cooling channel 560 is further provided in the pedestal 510. The pedestal cooling channel 560 is used to transport coolant to cool the pedestal 510, and there is also a heat transfer channel in the pedestal 510. The heat transfer channel is used to transport a heat-conducting gas, such as helium, to control the temperature of the substrate W to be processed.

[0070] In this embodiment, the semiconductor component can be at least one of the nozzle 503, the pedestal 510 or the insulating window 517. Correspondingly, the through hole to be cleaned is the through hole in the nozzle 503, the pedestal cooling channel 560 or the heat transfer channel in the pedestal 410.

[0071] Figure 6 It is a flowchart of the method for cleaning semiconductor components of the present invention.

[0072] Please refer to Figure 6 , step S1: Provide the above cleaning device; step S2: Make the outer edge fit with the surface of a semiconductor component; step S3: After fitting, transport the solution in the solution source to the internal space of the inner tube through the first solution input pipe; step S4: Turn on the first vacuum pump to reduce the pressure in the cavity, so that part of the gas in the solution escapes, and a high-pressure gas-liquid mixed fluid is formed on the surface of the semiconductor component. The gas-liquid mixed fluid can clean the surface of the semiconductor component.

[0073] Combined with Figure 1 , Figure 6 , Figure 7 and Figure 8 The cleaning method of the semiconductor component will be described in detail:

[0074] Please refer to Figure 1 and Figure 7 Define the first solution input pipe 120, the inner pipe 104, the outer pipe 105, and the first gas-liquid output pipe 113 as nozzle 1, define the solution source 101, the second solution input pipe 102, and the high-pressure pump 130 as the first module 2, and define the gas-liquid separation tank 108, the gas delivery pipe 116, the gas tank 109, the liquid delivery pipe 117, and the liquid tank 110 as the second module 3.

[0075] Figure 7 is a schematic diagram of the moving trajectory of nozzle 1; Figure 8 is a top view of the outer pipe and the semiconductor component 150.

[0076] Please refer to Figure 7 and Figure 8 When the cross-sectional area of the outer pipe 105 is smaller than the surface area of the semiconductor component 150, the cleaning device further includes: a clamping tool (not shown in the figure) and a power device (not shown in the figure). The clamping tool is used to clamp the outer side wall of the outer pipe 105. The clamping tool is connected to the power device, and the power device is used to provide a driving force to the clamping tool to drive the nozzle to move along the X direction and the Y direction on the surface of the semiconductor component 150. Figure 7 Schematically shows that the nozzle 1 moves from the solid line position to the dotted line position along the X direction. The power device can also drive the nozzle 1 to move along the Y direction on the surface of the semiconductor component 150 (not shown), so as to realize the cleaning of each position on the surface of the semiconductor component 150. Moreover, during the movement of the nozzle 1, the positions of the first module 2 and the second module 3 do not change. In addition, since the nozzle 1 can move along the X direction and the Y direction, the cleaning device is not limited by the shape and size of the semiconductor component 150, and can realize the cleaning of the semiconductor component 150. There is no need to adaptively change the cleaning device due to the different sizes of the semiconductor components 150, that is: the cleaning device of the present invention can realize the cleaning of semiconductor components with different shapes and different sizes, has high universality, and good cleaning effect.

[0077] When using the cleaning device for Figure 2 the embodiment, the nozzle further includes: the second gas-liquid output pipe 211. The nozzle moves along the X direction and the Y direction on the surface of the semiconductor component, so as to realize the cleaning of each position on the surface of the semiconductor component 150.

[0078] When the semiconductor component includes a through hole, the outer tube includes an upper part and a lower part of the outer tube, the inner tube is sleeved inside the upper part of the outer tube, and the cleaning device further includes: a second gas-liquid output pipeline and a second vacuum pump, and the second vacuum pump is communicated with the lower part of the outer tube through the second gas-liquid output pipeline; the method for cleaning the semiconductor component further includes: turning on the second vacuum pump to enable some gases in the solution to escape, and forming a high-pressure solution on the inner surface of the through hole, and the high-pressure solution can clean the inner surface of the through hole.

[0079] In summary, the inner tube and the outer tube are sleeved with each other, a cavity is formed between the outer side wall of the inner tube and the inner side wall of the outer tube, and the inside of the cavity is communicated with the internal space of the inner tube. The first vacuum pump is connected to the cavity and is used for reducing the pressure in the cavity, so that when the liquid in the inner tube flows to the bottom of the inner tube, the pressure drops suddenly, the gases in the solution escape, and a high-pressure gas-liquid mixture is formed, and the high-pressure gas-liquid mixture can clean the surface of the semiconductor component.

[0080] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

Claims

1. A cleaning device for semiconductor components, characterized in that, Comprising: An outer tube, the bottom of which includes an outer edge for fitting with a semiconductor component; An inner tube sleeved inside the outer tube, a cavity being formed between the outer side wall of the inner tube and the inner side wall of the outer tube, and the interior of the cavity being in communication with the interior space of the inner tube; A solution source in communication with the interior space of the inner tube through a first solution input pipeline for inputting a solution into the interior space of the inner tube, wherein a gas is dissolved in the solution; A first vacuum pump in communication with the cavity for reducing the pressure in the cavity, such that a part of the gas in the solution escapes, forming a high-pressure gas-liquid mixture on the surface of the semiconductor component, and the high-pressure gas-liquid mixture is used for cleaning the semiconductor component.

2. The cleaning device for semiconductor components according to claim 1, characterized in that, Between the solution source and the first solution input pipeline, there are further included: a high-pressure pump and a connector. Two ends of the first solution input pipeline are respectively in communication with the inner tube and the connector; between the high-pressure pump and the connector, there is further included: a first hose in communication with the first solution input pipeline; between the high-pressure pump and the solution source, there is further included: a second solution input pipeline.

3. The cleaning device for semiconductor components according to claim 2, characterized in that, The first vacuum pump is in communication with the cavity through a first gas-liquid output pipeline; there is further included: a gas-liquid separation tank in communication with the first vacuum pump through a second hose; a gas tank in communication with the gas-liquid separation tank through a gas delivery pipeline; a liquid tank in communication with the gas-liquid separation tank through a liquid delivery pipeline.

4. The cleaning device for semiconductor components according to claim 3, characterized in that, When the semiconductor component includes a through hole penetrating its thickness, the outer tube includes an upper part of the outer tube and a lower part of the outer tube, the inner tube is sleeved inside the upper part of the outer tube, the upper part of the outer tube has an upper outer edge, the lower part of the outer tube has a lower outer edge, the semiconductor component is disposed between the upper part of the outer tube and the lower part of the outer tube, and the upper outer edge and the lower outer edge are used for respectively fitting with the upper and lower surfaces of the semiconductor component.

5. The cleaning device for semiconductor components according to claim 4, characterized in that, The cross-sectional area of the inner tube is greater than or equal to the cross-sectional area of the through hole.

6. The cleaning device for semiconductor components according to claim 4, wherein, There is further included: A second gas-liquid output pipeline and a third hose, the second gas-liquid output pipeline and the third hose being in communication through a second vacuum pump, two ends of the second gas-liquid output pipeline being respectively in communication with the lower part of the outer tube and the second vacuum pump, and the second vacuum pump and the first gas-liquid output pipeline being in communication through a third hose.

7. The cleaning device for semiconductor components according to claim 1, wherein When the cross-sectional area of the outer tube is smaller than the surface area of the semiconductor component, there are further included: a power device and a clamping tool. The clamping tool clamps the outer side wall of the outer tube, and the clamping tool is connected to the power device for moving the relative positions of the outer tube and the inner tube on the surface of the semiconductor component, and during the movement, the relative positional relationship between the outer tube and the inner tube remains unchanged.

8. The cleaning device for semiconductor components according to claim 7, wherein, The power device can move the outer tube and the inner tube in the X direction, Y direction, and Z direction, where the X direction and Y direction are parallel to the surface of the semiconductor component, and the Z direction is perpendicular to the surface of the semiconductor component.

9. The cleaning device for semiconductor components according to claim 1, wherein, The first solution input pipeline is in communication with the top of the inner tube.

10. The cleaning device for semiconductor components according to claim 1, characterized in that, When the outer edge fits with the semiconductor component, there is a gap between the bottom of the inner tube and the semiconductor component, and the gap is in communication with the cavity.

11. The cleaning device for semiconductor components according to claim 1, wherein The outer edge surface facing the semiconductor component further includes: a seal for sealing the outer edge and the semiconductor component.

12. The cleaning device for semiconductor components according to claim 1, wherein, The inner tube and the outer tube are coaxially arranged.

13. A method for cleaning semiconductor components, characterized in that, Comprising: Providing a cleaning device according to any one of claims 1 to 12; Bringing the outer edge into contact with the surface of a semiconductor component; After the contact, conveying the solution in the solution source to the internal space of the inner tube through the first solution input pipe; Turning on the first vacuum pump to reduce the pressure in the cavity, so that some gases in the solution escape, forming a high-pressure gas-liquid mixture on the surface of the semiconductor component, and the high-pressure gas-liquid mixture can clean the surface of the semiconductor component.

14. The method for cleaning semiconductor components according to claim 13, characterized in that, When the cross-sectional area of the outer tube is smaller than the surface area of the semiconductor component, the cleaning device further includes: a power device for moving the relative positions of the outer tube and the inner tube on the surface of the semiconductor component, and during the movement, the relative positional relationship between the outer tube and the inner tube remains unchanged; the method for cleaning the semiconductor component further includes: using the power device to move the relative positions of the outer tube and the inner tube on the surface of the semiconductor component so that the entire surface of the semiconductor component is cleaned.

15. The method for cleaning semiconductor components according to claim 13, wherein, When the semiconductor component includes through holes, the outer tube includes an upper part and a lower part of the outer tube, and the inner tube is sleeved inside the upper part of the outer tube. The cleaning device further includes: a second gas-liquid output pipe and a second vacuum pump, and the second vacuum pump is communicated with the lower part of the outer tube through the second gas-liquid output pipe; the method for cleaning the semiconductor component further includes: turning on the second vacuum pump so that some gases in the solution escape, forming a high-pressure gas-liquid mixture on the inner surface of the through holes, and the high-pressure gas-liquid mixture can clean the inner surface of the through holes.

Images