Power transistor circuit and integrated power transistor

Abstract

The invention relates to the technical field of power transistor output matching, in particular to a power transistor circuit and an integrated power transistor, the power transistor circuit comprises a power transistor body, a parallel resonance circuit and a second lead; the drain electrode of the power transistor body is electrically connected with the first end of the parallel resonance circuit, and the source electrode of the power transistor body is electrically connected with the second end of the parallel resonance circuit; when the drain electrode of the transistor body outputs a waveform, a standing wave is formed on a resonant circuit formed by a parasitic capacitor between the drain electrode and the source electrode of the transistor body and the parallel resonant circuit. Standing waves are generated through the resonance effect of the parallel resonance circuit, so that the efficiency of the power transistor is improved, and impedance matching is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of power transistor integrated circuits, and particularly to a power transistor circuit and an integrated power transistor. Background Art

[0002] Power transistors usually have an extremely low output impedance, so a matching circuit is required to match their output impedance. The inductance inside the package is generally realized by a bonding wire group, which not only connects the die and the external environment but also is the main means to realize the inductance. The bonding wire group is made of materials such as gold, silver, copper, and aluminum, with low loss. By controlling the length of the bonding wire, the dynamic adjustment range of the inductance is relatively large. By reasonably controlling parameters such as the length, wire type, and spacing of the bonding metal wire, a predetermined inductance value can be achieved, enabling the packaged power device to have better external matching friendliness in the working frequency band and realizing a small volume and high efficiency of the power amplifier module.

[0003] However, limited by the package, device size, and mounting process requirements, the minimum length and width of the wire group are restricted. In the design of power devices, the inductance of some bonding metal wires is often too large and cannot be further reduced by adjusting the bonding wire parameters, resulting in the device being unable to achieve the best match and affecting the realization of the best performance.

[0004] Based on this, it is necessary to develop and design an integrated power transistor circuit and an integrated power transistor. Summary of the Invention

[0005] Embodiments of the present invention provide a power transistor circuit and an integrated power transistor to solve the problems encountered in output impedance matching in the prior art.

[0006] In a first aspect, embodiments of the present invention provide a power transistor circuit, including: a power transistor body, a parallel resonance circuit, and a second lead; the drain of the power transistor body is electrically connected to the first end of the parallel resonance circuit, and the source of the power transistor body is electrically connected to the second end of the parallel resonance circuit; the second lead is electrically connected to the drain of the power transistor body; when a waveform is output at the drain of the transistor body, a standing wave is formed on the resonance circuit formed by the parasitic capacitance between the drain and the source of the transistor body and the parallel resonance circuit.

[0007] In a possible implementation manner, the parallel resonance circuit includes: a first inductor and a blocking capacitor; the first end of the first inductor is electrically connected to the drain of the power transistor body, the second end of the first inductor is electrically connected to the first end of the blocking capacitor, and the second end of the blocking capacitor is electrically connected to the source of the power transistor.

[0008] In a possible implementation manner, the power transistor further includes: a second inductor, and a first end of the second inductor is electrically connected to a first end of the DC-blocking capacitor; When two ends of an external capacitor are respectively electrically connected to a second end of the second inductor and a source electrode of the power transistor body, the second inductor and the external capacitor form a second resonant circuit; When a waveform output from a drain electrode of the transistor body includes a waveform at a resonant point frequency of the second resonant circuit, the waveform at the resonant point frequency of the second resonant circuit is bypassed by the second resonant circuit.

[0009] In a possible implementation manner, the power transistor further includes: a first lead; The second end of the second inductor is electrically connected to one end of the first lead.

[0010] In a possible implementation manner, a second connection wire is provided at a drain electrode of the power transistor body, and the drain electrode of the power transistor body is electrically connected to the second lead through the second connection wire.

[0011] In a second aspect, an embodiment of the present invention provides an integrated power transistor for implementing the power transistor circuit as described in the first aspect. The integrated power transistor includes: a power transistor body, a first output capacitor, a third wire group, and a second lead, where the third wire group includes a plurality of wires; A drain connection end of the power transistor body is electrically connected to a first end of the third wire group, and a second end of the third wire group is electrically connected to a first end of the first output capacitor; The second lead is electrically connected to the drain connection end of the power transistor body.

[0012] In a possible implementation manner, the integrated power transistor further includes: a first grounding block, a sixth wire group, and a seventh wire group; The first grounding block is electrically connected to a source electrode of the power transistor body; Two ends of the sixth wire group are respectively electrically connected to the drain connection end of the power transistor body and the second lead; Two ends of the seventh wire group are both electrically connected to the first grounding block; The seventh wire group is fixedly arranged below the first wire group, and a running direction of the seventh wire group is parallel to a running direction of the sixth wire group.

[0013] In a possible implementation manner, a width of the seventh wire group is not greater than a width of the sixth wire group.

[0014] In a possible implementation manner, the integrated power transistor further includes: a fifth inductor, and a first end of the fifth inductor is electrically connected to a first end of the first output capacitor.

[0015] In a possible implementation manner, the integrated power transistor further includes: a first lead, and a second end of the fifth inductor is electrically connected to the first lead.

[0016] The beneficial effects of the embodiments of the present invention compared with the prior art are as follows: The embodiments of the present invention disclose a power transistor circuit, which includes: a power transistor body, a parallel resonant circuit, and a second lead; a drain of the power transistor body is electrically connected to a first end of the parallel resonant circuit, and a source of the power transistor body is electrically connected to a second end of the parallel resonant circuit; when a waveform is output at the drain of the transistor body, a standing wave is formed on a resonant circuit formed by a parasitic capacitance between the drain and the source of the transistor body and the parallel resonant circuit. By the resonance effect of the parallel resonant circuit, a standing wave is generated, thereby improving the efficiency of the power transistor and achieving impedance matching.

[0017] The embodiments of the present invention also disclose an integrated power transistor, which includes: a power transistor body, a first output capacitor, a third wire group, and a second lead; the integrated power transistor further includes: a first grounding block, a sixth wire group, and a seventh wire group; two ends of the sixth wire group are respectively connected to a drain connection end of the power transistor body and the second lead; both ends of the seventh wire group are electrically connected to the first grounding block; the seventh wire group is fixedly arranged below the first wire group, and the direction of the seventh wire group is parallel to the direction of the sixth wire group. A secondary wire group is provided below the main wire group. By adjusting the number, width, and distance from the wire group of the secondary wire group, the inductance of the wire group is adjusted, so that the inductance of the wire group arranged in a limited space is controllable, thereby achieving a relatively ideal impedance matching. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for use in the embodiments or the description of the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0019] Figure 1 is the schematic diagram of the power transistor circuit provided by the embodiments of the present invention; Figure 2 is the top view of the first output internal matching circuit of the integrated power transistor provided by the embodiments of the present invention; Figure 3It is the front view of the internal matching circuit for the first output of the integrated power transistor provided by the embodiment of the present invention; Figure 4 It is the three-dimensional view of the internal matching circuit for the first output of the integrated power transistor provided by the embodiment of the present invention; Figure 5 It is the top view of the internal matching circuit for the second output of the integrated power transistor provided by the embodiment of the present invention; Figure 6 It is the front view of the internal matching circuit for the second output of the integrated power transistor provided by the embodiment of the present invention; Figure 7 It is the three-dimensional view of the internal matching circuit for the second output of the integrated power transistor provided by the embodiment of the present invention; Figure 8 It is the load-pull optimized output impedance diagram of the internal matching circuit for the first output of the integrated power transistor at 2.6 GHz; Figure 9 It is the load-pull optimized output impedance diagram of the internal matching circuit for the second output of the integrated power transistor at 2.6 GHz; In the figure: Transistor 201; First inductor 203; DC-blocking capacitor 204; Third inductor 205; Fourth inductor 206; Case metal lead 207; Harmonic termination circuit 250; Second inductor element 251; External capacitor element 252; First output internal matching circuit 300; First drain connection terminal 301; First output capacitor 302; First ground block 303; Second lead 304; First insulating ring 305; Third metal wire group 306; Sixth metal wire group 307; Seventh metal wire group 308; First lead 309; Fifth inductor 310; Second output internal matching circuit 400; Second drain connection terminal 401; Second output capacitor 402; Second ground block 403; Fourth lead 404; 405 The second insulating coil; 406 The eighth metal wire group; 407 The ninth metal wire group; 409 The third lead; 410 The sixth inductor. Detailed implementation manners

[0020] In the following description, for the purpose of illustration rather than limitation, specific details such as specific system structures and technologies are presented to thoroughly understand the embodiments of the present invention. However, those skilled in the art should clearly understand that the present invention can also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, and methods are omitted to avoid unnecessary details from interfering with the description of the present invention.

[0021] To make the objectives, technical solutions, and advantages of the present invention clearer, the following will be described through specific implementation manners with reference to the accompanying drawings.

[0022] The following details the embodiments of the present invention. This example is implemented on the premise of the technical solution of the present invention, and detailed implementation manners and specific operation processes are given. However, the protection scope of the present invention is not limited to the following embodiments.

[0023] In a first aspect, an embodiment of the present invention provides a power transistor circuit, including: A power transistor body, a parallel resonance circuit, and a second lead; The drain of the power transistor body is electrically connected to the first end of the parallel resonance circuit, and the source of the power transistor body is electrically connected to the second end of the parallel resonance circuit; The second lead is electrically connected to the drain of the power transistor body; When a waveform is output at the drain of the transistor body, a standing wave is formed on the resonance circuit formed by the parasitic capacitance between the drain and the source of the transistor body and the parallel resonance circuit.

[0024] In a possible implementation manner, the parallel resonance circuit includes: a first inductor and a DC-blocking capacitor; The first end of the first inductor is electrically connected to the drain of the power transistor body, the second end of the first inductor is electrically connected to the first end of the DC-blocking capacitor, and the second end of the DC-blocking capacitor is electrically connected to the source of the power transistor.

[0025] In a possible implementation manner, the power transistor further includes: a second inductor, and the first end of the second inductor is electrically connected to the first end of the DC-blocking capacitor; When the two ends of the external capacitor are electrically connected to the second end of the second inductor and the source electrode of the power transistor body respectively, the second inductor and the external capacitor form a second resonant circuit; When the waveform output from the drain of the transistor body includes the waveform of the resonant point frequency of the second resonant circuit, the waveform of the resonant point frequency of the second resonant circuit is bypassed by the second resonant circuit.

[0026] In a possible implementation manner, the power transistor further includes: a first lead; The second end of the second inductor is electrically connected to one end of the first lead.

[0027] In a possible implementation manner, a second connection wire is provided at the drain of the power transistor body, and the drain of the power transistor body is electrically connected to the second lead through the second connection wire.

[0028] Exemplarily, Figure 1 For the power transistor circuit schematic diagram provided by the embodiment of the present invention, the output impedance of the power transistor 201 is very low, and the impedance of the pre-matching circuit 200 needs to be impedance-matched to a higher impedance, which is easier to perform external matching and more suitable for broadband matching. The transistor can be implemented by gallium nitride (GaN), or can be implemented by materials such as laterally diffused metal oxide semiconductor (LDMOS) and gallium arsenide (GaAs).

[0029] There are two groups of inductors on the transistor 201. The first inductor 203 is connected to the output DC-blocking capacitor 204. The capacitance value of the DC-blocking capacitor 204 can be selected in the range of 1 to 300 pF. The first inductor 203, optionally, has an inductance of 10 to 3000 pH. The first inductor 203 resonates with the equivalent parasitic capacitance Cds of the transistor 201, which can increase the output impedance of the transistor 201, reduce the power loss of the matching circuit, and thus improve the efficiency.

[0030] The first integrated passive matching circuit includes a third inductor 205, which is connected to the case metal lead 207. The inductance of the second inductor 205 is between 10 and 3000 pH. Through this path, the amplified signal of the transistor 201 is transmitted to the external circuit.

[0031] The case is generally composed of a grounding block, an insulating ring and a metal lead. The equivalent radio frequency effect can be analogized by a series inductor cascaded with a parallel capacitor.

[0032] The first integrated passive matching circuit further includes a secondary wire of the third inductor 205: a fourth inductor 206. The fourth inductor 206 can reduce the inductance of the third inductor 205, thereby changing the output impedance of the transistor 201.

[0033] When performing internal matching design for a power device, an overly large inductance value of the third inductor 205 can easily cause the optimized output impedance of the power device to approach the edge of the Smith chart, making it difficult to perform external matching circuit matching.

[0034] Limited by the die of the device assembly process specification and the minimum line spacing requirement for implementing the first inductor 203, the minimum inductance value of the third inductor 205 is limited. At the minimum line length, the inductance value of the third inductor 205 may still significantly exceed the expected value.

[0035] Through the fourth inductor 206, on the basis of maintaining the original structure, the inductance value of the third inductor 205 can be effectively reduced, thereby optimizing the device output impedance.

[0036] The harmonic termination circuit 250 is connected between the DC-blocking capacitor 204 and the ground reference point, and includes a series-connected second inductor element 251 and an external capacitor element 252. The inductance value of the second inductor element 251 is between 0.1 nH and 3 nH, and the capacitance value of the external capacitor 252 is between 0.1 and 20 μF. The second inductor element 251 and the external capacitor element 252 are resonant within the video bandwidth, providing a low-impedance path for video-band signals and ensuring the smoothness of the impedance in the low-frequency region, thereby improving the ability of the device to transmit wide-carrier signals with high linearity.

[0037] In a second aspect, an embodiment of the present invention provides an integrated power transistor for implementing the power transistor circuit as described in the first aspect. The integrated power transistor includes: A power transistor body, a first output capacitor, a third wire group, and a second lead, where the third wire group includes a plurality of wires; The drain connection end of the power transistor body is electrically connected to the first end of the third wire group, and the second end of the third wire group is electrically connected to the first end of the first output capacitor; The second lead is electrically connected to the drain connection end of the power transistor body.

[0038] In a possible implementation manner, the integrated power transistor further includes: a first ground block, a sixth wire group, and a seventh wire group; The first ground block is electrically connected to the source of the power transistor body; Both ends of the sixth wire group are respectively electrically connected to the drain connection end of the power transistor body and the second lead; Both ends of the seventh wire group are electrically connected to the first ground block; The seventh wire group is fixedly arranged below the first wire group, and the direction of the seventh wire group is parallel to the direction of the sixth wire group.

[0039] In a possible implementation, the width of the seventh wire group is not greater than the width of the sixth wire group.

[0040] In a possible implementation, the integrated power transistor further includes: a fifth inductor, and a first end of the fifth inductor is electrically connected to a first end of the first output capacitor.

[0041] In a possible implementation, the integrated power transistor further includes: a first lead, and a second end of the fifth inductor is electrically connected to the first lead.

[0042] Exemplarily, Figure 2 、 Figure 3 、and Figure 4 are respectively a top view, a front view, and a three-dimensional view of the first output internal matching circuit 300 of the integrated power transistor. The output impedance of the first drain connection end 301 is very low. The first output internal matching circuit 300 of the packaged power device matches it to a higher impedance, making it easier to perform external matching and more suitable for broadband matching. The transistor can be implemented by gallium nitride (GaN), or can be implemented by materials such as laterally diffused metal oxide semiconductor (LDMOS), gallium arsenide (GaAs), etc.

[0043] There are two groups of bonding wire groups on the first drain connection end 301. The third metal wire group 306 (the third wire group, hereinafter the third metal wire group is the third wire group without special instructions) is connected to the first output capacitor 302 (the implementation of the DC blocking capacitor in the first output internal matching circuit 300). The capacitance value of the first output capacitor 302 can be selected in the range of 1 to 300 pF. The third metal wire group 306, optionally, has an inductance of 10 to 3000 pH. The third metal wire group 306 resonates with the equivalent parasitic capacitance Cds of the transistor, which can increase the output impedance of the transistor, reduce the power loss of the matching circuit, and thus improve the efficiency.

[0044] In addition, the sixth metal wire group 307 (the implementation of the first metal wire group in the first output internal matching circuit 300) is connected to the second lead 304 (the extension of the second conductive block). The inductance of the sixth metal wire group 307 is between 10 and 3000 pH. Through this path, the amplified signal of the transistor is transmitted to the external circuit.

[0045] The first grounding block 303 provides the overall circuit grounding of the device, and is generally implemented by high-conductivity materials such as copper, silver, and alloys.

[0046] The first insulating circle 305 realizes the isolation between the ground and the signal path. The first insulating circle 305 can be composed of ceramic materials, has a small dielectric loss, and ensures the high efficiency of the device.

[0047] The seventh metal wire group 308 (the second metal wire group is implemented in the first output internal matching circuit 300) is a sub-wire of the sixth metal wire group 307. In this embodiment, the number and spacing of the bonding wires of the seventh metal wire group 308 are the same as those of the sixth metal wire group 307, and the arc height is slightly lower than that of the sixth metal wire group 307. The optional seventh metal wire group 308 can have fewer or more bonding wires than the sixth metal wire group 307, the spacing can be narrower or wider than the sixth metal wire group 307, and the arc height can be adjusted. The seventh metal wire group 308 can reduce the inductance of the sixth metal wire group 307. The more gold wires in the seventh metal wire group 308, the wider the longitudinal width, the closer the wire arc is to the sixth metal wire group 307 in physical space, and the stronger the inductance reduction effect is.

[0048] When used in power devices, the large inductance of the sixth metal wire group 307 easily causes the optimized output impedance of the power device to be close to the edge of the Smith original diagram, which is not easy to match with the external matching circuit. Limited by the device assembly process specifications, there are minimum spacing requirements between the transistor core and the first output capacitor 302, and between the first output capacitor 302 and the first insulating ring 305. In addition, in order to maintain a longer wire length of the third metal wire group 306 to achieve resonance between the third metal wire group 306 and the parasitic capacitance of the core, the spacing between the transistor core and the first output capacitor 302 must be further lengthened. This is because the arc height of the third metal wire group 306 is also limited by the bonding rules, and the wire arc cannot be increased, only the wire spacing can be increased. In this way, the minimum wire length of the sixth metal wire group 307 is limited. At the minimum wire length, the inductance of the sixth metal wire group 307 may still significantly exceed the expected value.

[0049] By means of the seventh metal wire group 308 , the inductance of the sixth metal wire group 307 can be effectively reduced while maintaining the original structure.

[0050] The fifth inductor 310 (realized by a metal wire group) is between the first output capacitor 302 and the first lead 309. The first lead 309 is connected to a uF capacitor to ground in an external matching circuit, and the capacitance is between 0.1 and 20 uF. The inductance of the fifth inductor 310 is between 0.1 nH and 3 nH. The fifth inductor 310 connected in series and the uF capacitor externally connected to the first lead 309 resonate within the video bandwidth (100 Hz-1 GHz), providing a low-resistance path for the video frequency band signal and ensuring the stability of the impedance in the low-frequency region, thereby improving the device's ability to transmit wide carrier signal bandwidth with high linearity.

[0051] Figure 5 , Figure 6 and Figure 7 4 and 5 are respectively a top view, a front view and a three-dimensional view of the second output inner matching circuit 400 .

[0052] The output impedance of the power transistor is very low, and the second output internal matching circuit 400 needs to match the impedance to a higher impedance, which is easier for external matching and more suitable for broadband matching. The transistor can be implemented by gallium nitride (GaN), or by materials such as laterally diffused metal oxide semiconductor (LDMOS), gallium arsenide (GaAs), etc.

[0053] There are two groups of bonding wire groups at the second drain connection end. The eighth metal wire group 406 is connected to the second output capacitor 402. The capacitance value of the second output capacitor 402 is selected in the range of 1 to 300 pF, and the inductance of the eighth metal wire group 406 is 10 to 3000 pH. The eighth metal wire group 406 resonates with the equivalent parasitic capacitance of the transistor, raising the output impedance of the transistor and reducing the power loss of the matching circuit, thereby improving the efficiency.

[0054] The ninth metal wire group 407 is connected to the fourth lead 404. The inductance of the ninth metal wire group 407 is between 10 and 3000 pH. Through this path, the transistor transmits the amplified signal to the external circuit.

[0055] The second ground block 403 provides the overall circuit grounding of the device, which is generally implemented by high-conductivity materials such as copper, silver, and alloys.

[0056] The second insulating circle 405 realizes the isolation between the ground and the signal path. The insulating circle can be composed of ceramic materials, with small dielectric losses, ensuring the high efficiency of the device.

[0057] The sixth inductor 410 is between the second output capacitor 402 and the third lead 409. The third lead 409 connects a uF capacitor to the ground in the external matching circuit, and the capacitance value is between 0.1 and 20 uF. The inductance of the fifth inductor 310 is between 0.1 nH and 3 nH. The sixth inductor 410 resonates with the uF capacitor connected externally to the third lead 409 within the video bandwidth (100 Hz - 1 GHz), providing a low-impedance path for video-band signals and ensuring the smoothness of the impedance in the low-frequency region, thereby improving the device's ability to transmit wide-carrier signals with high linearity over a wide bandwidth.

[0058] The only difference between the second output internal matching circuit 400 and the first output internal matching circuit 300 is that it does not contain the sixth metal wire group and cannot reduce the inductance from the transistor to the lead.

[0059] Figure 8The load-pull optimized output impedance of the first output internal matching circuit 300 at 2.6 GHz is shown by the power circle contour plot and the efficiency circle contour plot of the first output internal matching circuit 300 on the Smith chart. The Smith chart can visually represent complex impedances. The center impedance of the Smith chart in the figure is 10 ohm, and each position in the original chart corresponds to a complex impedance. The solid lines in the figure are the constant efficiency circles of the first output internal matching circuit 300, which are composed of multiple closed curves. Each curve represents a fixed efficiency, and the closer to the inside, the higher the efficiency. The efficiency at different output impedances can be determined through this efficiency circle chart. The dotted lines are the power original charts, which are composed of multiple closed curves. Each curve represents a fixed power, and the closer to the inside, the higher the power. The power at different output impedances can be determined through this power circle chart. The real parts of the impedances at the centers of the best efficiency circle and the best power circle of the first output internal matching circuit 300 both exceed 4 ohm, and the Q values are both less than 1. The Q value is the result of dividing the absolute value of the imaginary part by the real part value. The larger the Q value, the worse the broadband effect of the matching circuit and the less suitable it is for broadband circuit matching.

[0060] Figure 9 The load-pull optimized output impedance of the second output internal matching circuit 400 at 2.6 GHz. The real part of the impedance at the center of the efficiency circle of the second output internal matching circuit 400 is slightly greater than 4 ohm, the impedance at the center of the power circle is only 3 ohm, and the Q values of the impedance at the power point and the efficiency point are greater than 2.

[0061] The radio frequency microwave power amplifier needs to maintain good optimized output impedance friendliness to facilitate the design of the peripheral circuit. Good impedance friendliness means a higher real part of the impedance, such as 4 - 25 ohm, and a lower Q value, such as less than 2. According to the output load-pull data of the two different output internal matching circuits in the Smith chart, it can be seen that through the use of the stub proposed in this patent, the real part of the transistor output impedance is increased, the real part of the impedance is increased from 3 - 4 ohm to 4 - 5 ohm, the Q value at the efficiency point is reduced from greater than 2 to less than 1, and the Q value at the power point is reduced from greater than 1 to less than 1. Through the inductance reduction effect of the stub, the transistor output impedance is more friendly, so the external matching area is smaller, the applicable bandwidth is narrow, and the overall circuit module efficiency is higher. This device has a better design.

[0062] An embodiment of the present invention discloses a power transistor circuit, which includes: a power transistor body, a parallel resonant circuit, and a second lead; the drain of the power transistor body is electrically connected to the first end of the parallel resonant circuit, and the source of the power transistor body is electrically connected to the second end of the parallel resonant circuit; when the drain of the transistor body outputs a waveform, a standing wave is formed on the resonant circuit formed by the parasitic capacitance between the drain and the source of the transistor body and the parallel resonant circuit. By the resonant action of the parallel resonant circuit, a standing wave is generated, thereby improving the efficiency of the power transistor and achieving impedance matching.

[0063] An embodiment of the present invention also discloses an integrated power transistor, which includes: a power transistor body, a first output capacitor, a third wire group, and a second lead; the integrated power transistor further includes: a first grounding block, a sixth wire group, and a seventh wire group; both ends of the sixth wire group are electrically connected to the drain connection end of the power transistor body and the second lead respectively; both ends of the seventh wire group are electrically connected to the first grounding block; the seventh wire group is fixedly arranged below the first wire group, and the running direction of the seventh wire group is parallel to the running direction of the sixth wire group. A secondary wire group is arranged below the main wire group, and the inductance of the wire group is adjusted by the number, width, and distance from the wire group of the secondary wire group, so that the inductance of the wire group arranged in the limited space is controllable, thereby achieving an ideal impedance matching.

[0064] It should be understood that the magnitudes of the sequence numbers of the steps in the above embodiments do not mean the order of execution. The order of execution of each process should be determined by its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.

[0065] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. A power transistor circuit, characterized in that: include: A power transistor body (201), a parallel resonant circuit and a second lead; The drain of the power transistor body (201) is electrically connected to the first end of the parallel resonant circuit, and the source of the power transistor body (201) is electrically connected to the second end of the parallel resonant circuit; The second lead is electrically connected to the drain of the power transistor body (201); When the drain of the transistor body (201) outputs a waveform, a standing wave is formed on a resonant circuit formed by a parasitic capacitance between the drain and source of the transistor body (201) and the parallel resonant circuit.

2. The power transistor circuit according to claim 1, characterized in that: The parallel resonant circuit comprises: a first inductor (203) and a DC blocking capacitor (204); The first end of the first inductor (203) is electrically connected to the drain of the power transistor body (201), the second end of the first inductor (203) is electrically connected to the first end of the DC blocking capacitor (204), and the second end of the DC blocking capacitor (204) is electrically connected to the source of the power transistor body (201).

3. The power transistor circuit according to claim 2, characterized in that: The power transistor further comprises: a second inductor (251), a first end of the second inductor (251) being electrically connected to a first end of the DC blocking capacitor (204); When two ends of the external capacitor are electrically connected to the second end of the second inductor (251) and the source of the power transistor body (201) respectively, the second inductor (251) and the external capacitor form a second resonant circuit; When the waveform outputted by the drain of the transistor body (201) includes the waveform of the resonant point frequency of the second resonant circuit, the waveform of the resonant point frequency of the second resonant circuit is bypassed by the second resonant circuit.

4. The power transistor circuit according to claim 3, characterized in that: The power transistor further comprises: a first lead; The second end of the second inductor is electrically connected to one end of the first lead.

5. The power transistor circuit according to any one of claims 1 to 4, characterized in that: The drain of the power transistor body (201) is provided with a second connecting wire (207), and the drain of the power transistor body (201) is electrically connected to the second lead via the second connecting wire (207).

6. An integrated power transistor, characterized in that: Used to implement the power transistor circuit according to any one of claims 1 to 2, the integrated power transistor comprising: A power transistor body, a first output capacitor (302), a third wire group and a second lead (304), wherein the third wire group includes a plurality of wires; The drain connection end of the power transistor body is electrically connected to the first end of the third wire group, and the second end of the third wire group is electrically connected to the first end of the first output capacitor (302); The second lead (304) is electrically connected to the drain connection end of the power transistor body.

7. The integrated power transistor according to claim 6, characterized in that: The integrated power transistor further comprises: a first grounding block (303), a sixth wire group and a seventh wire group; The first grounding block (303) is electrically connected to the source electrode of the power transistor body; Two ends of the sixth wire group are electrically connected to the drain connection end of the power transistor body and the second lead respectively; Both ends of the seventh wire group are electrically connected to the first grounding block (303); The seventh wire group is fixedly arranged below the first wire group, and the direction of the seventh wire group is parallel to the direction of the sixth wire group.

8. The integrated power transistor according to claim 7, characterized in that: The width of the seventh conductive line group is not greater than the width of the sixth conductive line group.

9. The integrated power transistor according to any one of claims 6 to 8, characterized in that: The integrated power transistor further comprises: a fifth inductor (310), a first end of the fifth inductor (310) being electrically connected to a first end of the first output capacitor (301).

10. The integrated power transistor according to claim 9, characterized in that: The integrated power transistor further comprises: a first lead (309), and the second end of the fifth inductor (310) is electrically connected to the first lead (309).

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