Integrated passive matching, pre-matching and output internal matching circuit

Abstract

The invention relates to the technical field of power transistor output matching, in particular to an integrated passive matching, pre-matching and output internal matching circuit, and discloses an integrated passive matching circuit which is characterized in that an auxiliary wire group is arranged below a wire group for connecting two conductive blocks; the conductive block is fixedly arranged above the conductive plane through the insulating support, the two ends of the auxiliary wire group are connected with the conductive plane, and the inductance value of the wire group is adjusted through the number and width of wires of the auxiliary wire group and the distance between the auxiliary wire group and the wire group, so that the inductance value of the wire group arranged in the limited space is controllable. According to the pre-matching circuit disclosed by the embodiment of the invention, the inductor and the capacitor which are connected in series are arranged, and the inductor and the capacitor are set and are connected with the drain electrode of the power transistor, so that the harmonic wave with the preset frequency generates resonance on the inductor, the capacitor and the parasitic capacitor of the power transistor, and the output impedance of the transistor is increased; the power loss of the matching circuit is reduced and the efficiency of the power transistor is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of power transistor output matching, and in particular to an integrated passive matching, pre-matching, and output internal matching circuit. Background Art

[0002] Power transistors usually have extremely low output impedance, and a passive matching circuit is required to match their impedance to a high-impedance terminal load.

[0003] The passive matching circuit consists of capacitors, inductors, integrated passive circuits, device package cases, PCB matching circuits, etc. In practical applications, generally, the power transistor, capacitors, inductors, passive integrated circuits and other passive matching circuits are first packaged into the case to form a power device, which transitions the input and output impedance from an extremely low value to an intermediate value, and then the PCB matching circuit outside the case realizes the transformation from the intermediate impedance to the final load.

[0004] The inductor inside the case is generally realized by a metal bonding wire group. It not only connects the die and the external environment but also is the main means to realize the inductor. The bonding wire group is made of materials such as gold, silver, copper, and aluminum, with low loss. By controlling the length of the bonding wire, the dynamic adjustment range of the inductance is relatively large. By reasonably controlling parameters such as the length, wire type, and spacing of the bonding metal wire, a predetermined inductance value is achieved, enabling the packaged power device to have a better external matching friendliness in the working frequency band and realizing a small volume and high efficiency of the power amplifier module.

[0005] However, limited by the case packaging, device size, and mounting process requirements, both the minimum length and width of the wire group are limited. In the design of power devices, often due to the relatively large inductance of some bonding metal wires and the inability to further reduce it by adjusting the bonding wire parameters, the device cannot achieve the best matching, affecting the realization of the best performance.

[0006] Based on this, it is necessary to develop and design an integrated passive matching circuit. Summary of the Invention

[0007] Embodiments of the present invention provide an integrated passive matching, pre-matching, and output internal matching circuit for solving the problem that the inductance of the bonding metal wire of the power transistor is relatively large due to size limitations in the prior art.

[0008] In a first aspect, embodiments of the present invention provide an integrated passive matching circuit, including: A first conductive block, a second conductive block, a conductive plane, an insulating support, a first wire group, and a second wire group; The first wire group and the second wire group each include a plurality of conductive wires; The first conductive block and the second conductive block are fixedly arranged above the conductive plane through the insulating support; Both ends of the first wire group are electrically connected to the first conductive block and the second conductive block respectively; The second wire group is fixedly arranged below the first wire group, and both ends of the second wire group are electrically connected to the conductive plane.

[0009] In a possible implementation manner, the running direction of the first wire group is parallel to that of the second wire group; the width of the second wire group is not greater than that of the first wire group.

[0010] In a possible implementation manner, when the integrated passive matching circuit is applied to the output matching of a transistor, the conductive plane is electrically connected to the transistor source connection wire; The insulating support is made of ceramic material; The first conductive block, the insulating support and the conductive plane form a first capacitor; The second conductive block, the insulating support and the conductive plane form a second capacitor; The insulating support extends outward to enclose and form a package.

[0011] In a second aspect, an embodiment of the present invention provides a pre-matching circuit, including: a first inductor, a first capacitor, and the integrated passive matching circuit according to any one of the first aspect; The second end of the first inductor is electrically connected to the first end of the first capacitor, and the second end of the first capacitor is grounded; The electrical connection point of the first inductor and the first capacitor is electrically connected to the first conductive block of the integrated passive matching circuit; The conductive plane of the integrated passive matching circuit is grounded.

[0012] In a possible implementation manner, when the first end of the first inductor is connected to the drain of the transistor and the source of the transistor is grounded, the parasitic capacitance between the source and the drain of the transistor, the first inductor and the first capacitor form a first resonant circuit.

[0013] In a possible implementation manner, the power transistor further includes: a second inductor; The first end of the second inductor is electrically connected to the first end of the first capacitor.

[0014] In a possible implementation manner, when an external capacitor is connected between the second end of the second inductor and the ground, the external capacitor and the second inductor form a second resonant circuit, and the resonant point of the second resonant circuit is within the video bandwidth.

[0015] In a third aspect, an output internal matching circuit of a power device is provided in an embodiment of the present invention for implementing the pre-matching circuit as described in the second aspect. The output internal matching circuit of the power device includes: the integrated passive matching circuit as described in any item of the first aspect. The output internal matching circuit of the power device further includes: a third wire group and a first output capacitor; One end of the third wire group is electrically connected to the first conductive block, the other end of the third wire group is electrically connected to the first end of the first output capacitor, and the second end of the first output capacitor is electrically connected to the conductive plane.

[0016] In a possible implementation manner, the output internal matching circuit of the power device further includes: a fourth wire group and a first lead; The first end of the fourth wire group is electrically connected to the first end of the first output capacitor, and the second end of the fourth wire group is electrically connected to the first end of the first lead.

[0017] In a possible implementation manner, the second conductive block extends to form a second lead. When the first conductive block is electrically connected to the drain of the transistor, the second conductive block serves as the output end of the transistor.

[0018] The beneficial effects of the embodiment of the present invention compared with the prior art are as follows: The embodiment of the present invention discloses an integrated passive matching circuit. A secondary wire group is provided below the wire group connecting two conductive blocks. The conductive blocks are fixedly arranged above the conductive plane through insulating supports. The two ends of the secondary wire group are connected to the conductive plane. By adjusting the number, width of the wires of the secondary wire group and the distance from the wire group, the inductance of the wire group is adjusted, so that the inductance of the wire group arranged in the limited space is controllable.

[0019] The pre-matching circuit disclosed in the embodiment of the present invention is provided with a series-connected inductor and capacitor. By setting the values of the inductor and capacitor and connecting them to the drain of the power transistor, resonance is generated on the inductor, capacitor and the parasitic capacitance of the power transistor for a harmonic wave of a predetermined frequency, raising the output impedance of the transistor and reducing the power loss of the matching circuit, thereby improving the efficiency of the power transistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for use in the embodiments or the description of the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0021] Figure 1It is the front view of the first integrated passive matching circuit provided by the embodiment of the present invention; Figure 2 It is the side view of the first integrated passive matching circuit provided by the embodiment of the present invention; Figure 3 It is the front view of the second integrated passive matching circuit provided by the embodiment of the present invention; Figure 4 It is the side view of the second integrated passive matching circuit provided by the embodiment of the present invention; Figure 5 It is the radio frequency effect difference diagram between the first integrated passive matching circuit and the second integrated passive matching circuit provided by the embodiment of the present invention; Figure 6 It is the schematic diagram of the pre-matching circuit provided by the embodiment of the present invention; Figure 7 It is the top view of the first output internal matching circuit provided by the embodiment of the present invention; Figure 8 It is the front view of the first output internal matching circuit provided by the embodiment of the present invention; Figure 9 It is the three-dimensional view of the first output internal matching circuit provided by the embodiment of the present invention; Figure 10 It is the top view of the second output internal matching circuit provided by the embodiment of the present invention; Figure 11 It is the front view of the second output internal matching circuit provided by the embodiment of the present invention; Figure 12 It is the three-dimensional view of the second output internal matching circuit provided by the embodiment of the present invention; Figure 13 It is the load-pull optimized output impedance diagram of the first output internal matching circuit at 2.6 GHz provided by the embodiment of the present invention; Figure 14 It is the load-pull optimized output impedance diagram of the second output internal matching circuit at 2.6 GHz provided by the embodiment of the present invention; In the figure: 100 The first integrated passive matching circuit; 101 The first ground plane; 102 The first conductive block; 103 The first support; 104 The second conductive block; 105 The second support; 106 The first metal wire group; 107 The second metal wire group; 110 The second integrated passive matching circuit; 111 The second ground plane; 112 The third conductive block; 113 Third support; 114 Fourth conductive block; 115 Fourth support; 116 Fifth metal wire group; 201 Transistor; 203 First inductor; 204 First capacitor; 205 Third inductor; 206 Fourth inductor; 207 Package; 250 Harmonic terminal circuit; 251 Second inductor; 252 External capacitor component; 300 First output internal matching circuit; 301 First drain connection terminal; 302 First output capacitor; 303 First ground block; 304 Second lead; 305 First insulating ring; 306 Third metal wire group; 307 Sixth metal wire group; 308 Seventh metal wire group; 309 First lead; 310 Fifth inductor; 400 Second output internal matching circuit; 401 Second drain connection terminal; 402 Second output capacitor; 403 Second ground block; 404 Fourth lead; 405 Second insulating ring; 406 Eighth metal wire group; 407 Ninth metal wire group; 409 Third lead; 410 Sixth inductor. Detailed implementation manners

[0022] In the following description, for the purpose of illustration rather than limitation, specific details such as specific system structures and technologies are presented to thoroughly understand the embodiments of the present invention. However, those skilled in the art should clearly understand that the present invention can also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, and methods are omitted to avoid unnecessary details from interfering with the description of the present invention.

[0023] To make the objectives, technical solutions, and advantages of the present invention clearer, the following will explain through specific embodiments in conjunction with the accompanying drawings.

[0024] The following will elaborate on the embodiments of the present invention. This example is implemented on the premise of the technical solution of the present invention, and detailed implementation manners and specific operation procedures are given. However, the protection scope of the present invention is not limited to the following embodiments.

[0025] In a first aspect, an embodiment of the present invention provides an integrated passive matching circuit, including: A first conductive block, a second conductive block, a conductive plane, an insulating support, a first wire group, and a second wire group; The first wire group and the second wire group each include a plurality of conductive filaments; The first conductive block and the second conductive block are fixedly arranged above the conductive plane through the insulating support; Both ends of the first wire group are electrically connected to the first conductive block and the second conductive block respectively; The second wire group is fixedly arranged below the first wire group, and both ends of the second wire group are electrically connected to the conductive plane respectively.

[0026] In a possible implementation manner, the orientation of the first wire group is parallel to the orientation of the second wire group; the width of the second wire group is not greater than the width of the first wire group.

[0027] In a possible implementation manner, when the integrated passive matching circuit is applied to the output matching of a transistor, the conductive plane is electrically connected to the transistor source connection wire; The insulating support is made of ceramic material; The first conductive block, the insulating support, and the conductive plane form a first capacitor; The second conductive block, the insulating support, and the conductive plane form a second capacitor; The insulating support extends outward to enclose and form a package shell.

[0028] Exemplarily, Figure 1 and Figure 2 are respectively the front view and side view of the first integrated passive matching circuit 100 according to an embodiment of this patent. The first integrated passive matching circuit 100 is a basic unit for realizing inductance by a metal bonding wire group and its auxiliary wire, which can be applied to signal transmission in radio frequency and microwave circuits, can realize signal transmission, and play a role in impedance matching in the transmission path.

[0029] In the packaging of transistor devices, the first integrated passive matching circuit 100 is usually lapped between the die and the capacitor, between the die and the package shell, between the capacitor and the capacitor, or between the capacitor and the package shell.

[0030] The first ground plane 101 is an integral structure (conductive plane, hereinafter the first ground plane refers to the conductive plane without special instructions). The first conductive block 102, the first metal wire group 106 (the first wire group, hereinafter the first metal wire group refers to the first wire group without special instructions), and the second conductive block 104 are electrically connected and provide a signal transmission path. The first support 103 and the second support 105 are both insulators, providing physical support for the first conductive block 102 and the second conductive block 104 of the signal path on the one hand, and achieving electrical isolation between the signal transmission path and the electrical ground plane on the other hand.

[0031] In actual applications, one or all of the first support 103 and the second support 105 can be implemented by ceramic materials. At this time, the first support 103 and the first conductive block 102, and the second support 105 and the second conductive block 104 can be implemented as ceramic capacitors, and the overall circuit constitutes a basic matching structure of capacitor-inductor-capacitor.

[0032] The first support 103 can also be equivalent to the substrate of a transistor. At this time, the first conductive block 102 is the source connection wire of the transistor, and the overall circuit constitutes a basic matching structure of transistor-output capacitor / case.

[0033] The second metal wire group 107 (the second wire group, hereinafter the second metal wire group refers to the second wire group without special instructions) is the secondary wire of the first metal wire group 103. Both sides of its bonding wire are directly connected to the first ground plane 101. The second metal wire group 107 runs parallel to the main wire, and the two groups of wires have no contact in physical space.

[0034] The number of the first metal wire group 106 in the first integrated passive matching circuit 100 is N, the longitudinal width of the wire group is Wn, the number of the secondary wire metal wire group 107 is M, and the longitudinal width of the wire group is Wm.

[0035] The existence of the second metal wire group 107 can reduce the equivalent inductance of the first metal wire group 106. By adjusting the arc height of the second metal wire group 107, the number of gold wires m in the metal wire group, and the longitudinal width Wm of the metal wire group, the inductance influence of the second metal wire group 107 on the first metal wire group 106 can be adjusted.

[0036] The closer the arc of the second metal wire group 107 fits to the first metal wire group 106, the more the number of gold wires m, and the wider the longitudinal width Wm, the stronger the inductance reduction effect on the first metal wire group 106. The number M can be less than N or greater than N. The width Wm is usually less than or equal to Wn, and Wm can also be slightly greater than Wn. Continuing to widen Wm results in a rapid decrease in the radio frequency performance gain.

[0037] The first integrated passive matching circuit 100 realizes the adjustment of the inductance dynamic range of the first metal wire group 106 through the introduction of the second metal wire group 107, and realizes the downward expansion of the inductance adjustment range of the first metal wire group 106.

[0038] Figure 3 and Figure 4 are the front view and side view of the second integrated passive matching circuit 110 without the second metal wire group. There is no secondary wire of the main metal wire group 116 on the signal transmission path, and other parameters are exactly the same as those of the corresponding first integrated passive matching circuit 100. The second integrated passive matching circuit 110 is the basic unit for realizing inductance by the metal bonding wire group, which can be applied to the signal transmission of radio frequency and microwave circuits, can realize signal transmission, and play a role in impedance matching in the transmission path.

[0039] In the packaged transistor device, the first integrated passive matching circuit 100 is usually lapped between the die and the capacitor, between the die and the package, between the capacitors or between the capacitor and the package.

[0040] The second ground plane 111 is of an integral structure. The third conductive block 112, the fifth metal wire group 116 and the fourth conductive block 114 are electrically connected and provide a signal transmission path. The third support 113 and the fourth support 115 are insulators. On the one hand, they provide physical support for the third conductive block 112 and the fourth conductive block 114 of the signal path, and on the other hand, they realize the electrical isolation between the signal transmission path and the electrical ground plane.

[0041] In actual applications, one or all of the third support 113 and the fourth support 115 can be realized by ceramic materials. At this time, the third support 113 and the third conductive block 112, and the fourth support 115 and the fourth conductive block 114 can be realized as ceramic capacitors, and the overall circuit constitutes a basic matching structure of capacitor-inductor-capacitor.

[0042] The third support 113 can also be equivalent to the substrate of the transistor. At this time, the third conductive block 112 is the source connection wire of the transistor, and the overall circuit constitutes a basic matching structure of transistor-output capacitor / package.

[0043] Figure 5 is the difference in the radio frequency effects from 1 to 12 GHz of the metal wire group with a secondary wire and the metal wire group without a secondary wire when 50 ohm terminal loads are placed on both sides.

[0044] The path traversed by the solid line S11 corresponding to the metal wire group with a sub-wire (the second metal wire group 107 is the sub-wire of the first metal wire group 106) is significantly shorter than that of the fifth metal wire group 116 without a sub-wire. This means that the equivalent inductance of the first integrated passive matching circuit 100 is significantly smaller. The second metal wire group 107 can reduce the return current area of the first metal wire group 106, resulting in a lower inductance of the first metal wire group 106 of the first integrated passive matching circuit 100 than that of the fifth metal wire group 116 of the second integrated passive matching circuit 110. Utilizing this characteristic, the inductance reduction of a specific bonding wire group can be achieved.

[0045] In a second aspect, an embodiment of the present invention provides a pre-matching circuit, including: a first inductor, a first capacitor, and the integrated passive matching circuit according to any one of the first aspect; The second end of the first inductor is electrically connected to the first end of the first capacitor, and the second end of the first capacitor is grounded; The electrical connection point of the first inductor and the first capacitor is electrically connected to the first conductive block of the integrated passive matching circuit; The conductive plane of the integrated passive matching circuit is grounded.

[0046] In a possible implementation manner, when the first end of the first inductor is connected to the drain of the transistor and the source of the transistor is grounded, the parasitic capacitance between the source and drain of the transistor, the first inductor, and the first capacitor form a first resonant circuit.

[0047] In a possible implementation manner, the power transistor further includes: a second inductor; The first end of the second inductor is electrically connected to the first end of the first capacitor.

[0048] In a possible implementation manner, when an external capacitor is connected between the second end of the second inductor and the ground, the external capacitor and the second inductor form a second resonant circuit, and the resonant point of the second resonant circuit is within the video bandwidth.

[0049] Exemplarily, Figure 6 This is the schematic diagram of the pre-matching circuit of this patent. The output impedance of the power transistor 201 is very low, and the pre-matching circuit 200 needs to match the impedance to a higher impedance, which is easier for external matching and more suitable for broadband matching. The transistor can be implemented by gallium nitride (GaN), or can be implemented by materials such as laterally diffused metal oxide semiconductor (LDMOS), gallium arsenide (GaAs), etc.

[0050] There are two sets of inductors on the transistor 201. The first inductor 203 is connected to the output first capacitor 204. The capacitance value of the first capacitor 204 is selected in the optional range of 1 to 300 pF. The inductance of the first inductor 203 is, optionally, 10 to 3000 pH. The first inductor 203 resonates with the equivalent parasitic capacitance Cds of the transistor 201, which can increase the output impedance of the transistor 201 and reduce the power loss of the matching circuit, thereby improving the efficiency.

[0051] The first integrated passive matching circuit 100 includes a third inductor 205, which is connected to the metal lead of the package 207. The inductance of the second inductor 205 is between 10 and 3000 pH. Through this transistor 201, the amplified signal is transmitted to the external circuit.

[0052] The package is generally composed of a grounding block, an insulating ring, and a metal lead. The equivalent radio frequency effect can be compared with a series inductor cascaded with a parallel capacitor.

[0053] The first integrated passive matching circuit 100 also includes a secondary wire of the third inductor 205: a fourth inductor 206. The fourth inductor 206 can reduce the inductance of the third inductor 205, thereby changing the output impedance of the transistor 201.

[0054] When performing internal matching design for power devices, a relatively large inductance of the third inductor 205 easily causes the optimized output impedance of the power device to be close to the edge of the Smith chart, making it difficult to match the external matching circuit.

[0055] Limited by the device assembly process specifications of the die and the minimum line spacing requirements for implementing the first inductor 203, the minimum inductance value of the third inductor 205 is limited. At the minimum line length, the inductance of the third inductor 205 may still significantly exceed the expected value.

[0056] Through the fourth inductor 206, on the basis of maintaining the original structure, the inductance of the third inductor 205 can be effectively reduced, thereby optimizing the device output impedance.

[0057] The harmonic termination circuit 250 is connected between the first capacitor 204 and the ground reference point, and includes a series second inductor 251 and an external capacitor element 252. The inductance of the second inductor 251 is between 0.1 nH and 3 nH, and the capacitance value of the external capacitor 252 is between 0.1 and 20 uF. The second inductor 251 resonates with the external capacitor element 252 within the video bandwidth, providing a low-impedance path for video-band signals and ensuring the smoothness of the impedance in the low-frequency region, which can improve the ability of the device to transmit wide-carrier signals with high linearity.

[0058] In a third aspect, an output internal matching circuit of a power device is provided in an embodiment of the present invention, which is used to implement the pre-matching circuit as described in the second aspect. The output internal matching circuit of the power device includes: the integrated passive matching circuit as described in any item of the first aspect. The output internal matching circuit of the power device further includes: a third wire group and a first output capacitor; One end of the third wire group is electrically connected to the first conductive block, the other end of the third wire group is electrically connected to the first end of the first output capacitor, and the second end of the first output capacitor is electrically connected to the conductive plane.

[0059] In a possible implementation manner, the output internal matching circuit of the power device further includes: a fourth wire group and a first lead; The first end of the fourth wire group is electrically connected to the first end of the first output capacitor, and the second end of the fourth wire group is electrically connected to the first end of the first lead.

[0060] In a possible implementation manner, the second conductive block extends to form a second lead. When the first conductive block is electrically connected to the drain of the transistor, the second conductive block serves as the output end of the transistor.

[0061] Exemplarily, Figure 7 、 Figure 8 、and Figure 9 are respectively the top view, front view, and three-dimensional view of the first output internal matching circuit 300 of the packaged power device. The output impedance of the first drain connection end 301 is very low. The first output internal matching circuit 300 of the packaged power device matches it to a higher impedance, making it easier to perform external matching and more suitable for broadband matching. The transistor can be implemented by gallium nitride (GaN), or can be implemented by materials such as laterally diffused metal oxide semiconductor (LDMOS), gallium arsenide (GaAs), etc.

[0062] There are two groups of bonding wire groups on the first drain connection end 301. The third metal wire group 306 (the third wire group, hereinafter the third metal wire group is the third wire group without special instructions) is connected to the first output capacitor 302 (the implementation of the first capacitor in the first output internal matching circuit 300). The capacitance value of the first output capacitor 302 can be selected in the range of 1 to 300 pF. The third metal wire group 306, optionally, has an inductance of 10 to 3000 pH. The third metal wire group 306 resonates with the equivalent parasitic capacitance Cds of the transistor, which can raise the output impedance of the transistor, reduce the power loss of the matching circuit, and thus improve the efficiency.

[0063] In addition, the sixth metal wire group 307 (the implementation of the first metal wire group in the first output matching circuit 300) is connected to the second lead 304 (the extension of the second conductive block). The inductance of the sixth metal wire group 307 is between 10 and 3000 pH. The amplified signal is transmitted to the external circuit through this transistor.

[0064] The first ground block 303 provides the overall circuit ground for the device and is generally made of high-conductivity materials such as copper, silver, and alloys.

[0065] The first insulating circle 305 realizes the isolation between the ground and the signal path. The first insulating circle 305 can be composed of ceramic materials, having a small dielectric loss and ensuring the high efficiency of the device.

[0066] The seventh metal wire group 308 (the implementation of the second metal wire group in the first output matching circuit 300) is the secondary wire of the sixth metal wire group 307. In this embodiment, the number of bonding wires and the spacing of the seventh metal wire group 308 are the same as those of the sixth metal wire group 307, and the arc height is slightly lower than that of the sixth metal wire group 307. Optionally, the number of bonding wire groups of the seventh metal wire group 308 can be less than or more than that of the sixth metal wire group 307, the spacing can be narrower or wider than that of the sixth metal wire group 307, and the arc height can be adjusted. The seventh metal wire group 308 can reduce the inductance of the sixth metal wire group 307. The more the number of gold wires in the seventh metal wire group 308 and the wider the longitudinal width, the closer the wire arc is to the sixth metal wire group 307 in physical space, and the stronger the inductance reduction effect.

[0067] When applied to power devices, a relatively large inductance of the sixth metal wire group 307 easily causes the optimized output impedance of the power device to be close to the edge of the Smith chart, making it difficult to match the external matching circuit. Limited by the device assembly process specifications, there are minimum spacing requirements between the transistor die and the first output capacitor 302, and between the first output capacitor 302 and the first insulating circle 305. In addition, to maintain the relatively long wire length of the third metal wire group 306 to achieve the resonance between the third metal wire group 306 and the parasitic capacitance of the die, the spacing between the transistor die and the first output capacitor 302 needs to be further increased. This is because the arc height of the third metal wire group 306 is also limited by the bonding rules and cannot increase the wire arc, so only the wire spacing can be increased. In this way, the minimum wire length of the sixth metal wire group 307 is limited, and at the minimum wire length, the inductance of the sixth metal wire group 307 may still significantly exceed the expected value.

[0068] Through the seventh metal wire group 308, on the basis of maintaining the original structure, the inductance of the sixth metal wire group 307 can be effectively reduced.

[0069] The fifth inductor 310 (implemented by a metal wire group) is between the first output capacitor 302 and the first lead 309. The first lead 309 connects a uF capacitor to ground on the external matching circuit, with a capacitance value between 0.1 uF and 20 uF. The inductance of the fifth inductor 310 is between 0.1 nH and 3 nH. The series connection of the fifth inductor 310 and the uF capacitor externally connected to the first lead 309 resonates within the video bandwidth (100 Hz - 1 GHz), providing a low-impedance path for video-band signals and ensuring the smoothness of the impedance in the low-frequency region, thereby enhancing the device's ability to transmit wide-carrier signals with high linearity over a wide bandwidth.

[0070] Figure 10 、 Figure 11 and Figure 12 are respectively the top view, front view, and 3D view of the second output internal matching circuit 400.

[0071] The output impedance of the power transistor is very low, and the second output internal matching circuit 400 needs to match the impedance to a higher impedance, making it easier for external matching and more suitable for broadband matching. The transistor can be implemented by gallium nitride (GaN), or by materials such as laterally diffused metal oxide semiconductor (LDMOS), gallium arsenide (GaAs), etc.

[0072] There are two groups of bonding wire groups at the second drain connection end. The eighth metal wire group 406 is connected to the second output capacitor 402. The capacitance value of the second output capacitor 402 is selected in the range of 1 - 300 pF, and the inductance of the eighth metal wire group 406 is 10 - 3000 pH. The eighth metal wire group 406 resonates with the equivalent parasitic capacitance of the transistor, raising the transistor output impedance and reducing the power loss of the matching circuit, thereby enhancing the efficiency.

[0073] The ninth metal wire group 407 is connected to the fourth lead 404. The inductance of the ninth metal wire group 407 is between 10 - 3000 pH. Through this path, the transistor transmits the amplified signal to the external circuit.

[0074] The second ground block 403 provides overall circuit grounding for the device, generally implemented by high-conductivity materials such as copper, silver, and alloys.

[0075] The second insulating circle 405 realizes the isolation between the ground and the signal path. The insulating circle can be composed of ceramic materials, having a small dielectric loss and ensuring the high efficiency of the device.

[0076] The sixth inductor 410 is between the second output capacitor 402 and the third lead 409. The third lead 409 connects a uF capacitor to ground on the external matching circuit, and the capacitance value is between 0.1 uF and 20 uF. The inductance of the fifth inductor 310 is between 0.1 nH and 3 nH. The sixth inductor 410 resonates with the uF capacitor externally connected to the third lead 409 within the video bandwidth (100 Hz - 1 GHz), providing a low-impedance path for video-band signals and ensuring the smoothness of the impedance in the low-frequency region, thereby enhancing the device's ability to transmit wide-carrier signals with high linearity over a wide bandwidth.

[0077] The only difference between the second output internal matching circuit 400 and the first output internal matching circuit 300 is that it does not contain the sixth metal wire group and cannot reduce the inductance from the transistor to the lead.

[0078] Figure 13 To optimize the output impedance of the first output internal matching circuit 300 through load pulling at 2.6 GHz, the power circle contour plot and the efficiency circle contour plot of the first output internal matching circuit 300 on the Smith chart are shown. The Smith chart can visually represent complex impedances. The center impedance of the Smith chart in the figure is 10 ohm, and each position in the original chart corresponds to a complex impedance. The solid lines in the figure are the constant-efficiency circles of the first output internal matching circuit 300, which consist of multiple closed curves. Each curve represents a fixed efficiency, and the closer to the inside, the higher the efficiency. Through this efficiency circle diagram, the efficiency at different output impedances can be determined. The dashed lines are the power original charts, which consist of multiple closed curves. Each curve represents a fixed power, and the closer to the inside, the higher the power. Through this power circle diagram, the power at different output impedances can be determined. The real part of the impedance at the center of the best efficiency circle and the best power circle of the first output internal matching circuit 300 both exceed 4 ohm, and the Q values are both less than 1. The Q value is the result of dividing the absolute value of the imaginary part by the real part value. The larger the Q value, the worse the broadband effect of the matching circuit and the less suitable it is for broadband circuit matching.

[0079] Figure 14 To optimize the output impedance of the second output internal matching circuit 400 through load pulling at 2.6 GHz. The real part of the impedance at the center of the efficiency circle of the second output internal matching circuit 400 is slightly greater than 4 ohm, the impedance at the center of the power circle is only 3 ohm, and the Q value of the impedance at the power point and the efficiency point is greater than 2.

[0080] RF microwave power amplifiers need to maintain good optimized output impedance friendliness to facilitate the design of peripheral circuits. Good impedance friendliness means a higher real part of the impedance, such as 4 - 25 ohm, and a lower Q value, such as less than 2. According to the output load pulling data of two different output internal matching circuits in the Smith chart, by using the secondary line proposed in this patent, the real part of the transistor output impedance is increased. The real part of the impedance is increased from 3 - 4 ohm to 4 - 5 ohm, the Q value at the efficiency point is reduced from greater than 2 to less than 1, and the Q value at the power point is reduced from greater than 1 to less than 1. Through the inductance reduction effect of the secondary line, the transistor output impedance is more friendly, so the external matching area is smaller, the applicable bandwidth is narrow, and the overall circuit module efficiency is higher. This device has a better design.

[0081] It should be understood that the magnitudes of the sequence numbers of the steps in the above embodiments do not imply the order of execution. The order of execution of each process should be determined by its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.

[0082] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included in the protection scope of the present invention.

Claims

1. An integrated passive matching circuit, characterized in that: include: A first conductive block (102), a second conductive block (104), a conductive plane, an insulating support, a first conductive wire group, and a second conductive wire group; The first conductive wire group and the second conductive wire group respectively include a plurality of conductive wires; The first conductive block (102) and the second conductive block (104) are fixedly arranged above the conductive plane via the insulating support; Two ends of the first conductive wire group are electrically connected to the first conductive block (102) and the second conductive block (104) respectively; The second wire group is fixedly arranged below the first wire group, and two ends of the second wire group are electrically connected to the conductive plane respectively.

2. The integrated passive matching circuit according to claim 1, characterized in that: The direction of the first conductive line group is parallel to the direction of the second conductive line group; and the width of the second conductive line group is not greater than the width of the first conductive line group.

3. The integrated passive matching circuit according to any one of claims 1 to 2, characterized in that: When the integrated passive matching circuit is applied to the output matching of the transistor, the conductive plane is electrically connected to the source connection line of the transistor; The insulating support is made of ceramic material; The first conductive block (102), the insulating support and the conductive plane constitute a first capacitor; The second conductive block (104), the insulating support and the conductive plane form a first capacitor; The insulating support extends outward to surround and form a tube shell.

4. A pre-matching circuit, characterized in that: comprising a first inductor (203), a first capacitor (204) and an integrated passive matching circuit as claimed in any one of claims 1 to 3; The second end of the first inductor (203) is electrically connected to the first end of the first capacitor (204), and the second end of the first capacitor (204) is grounded; The electrical connection point between the first inductor (203) and the first capacitor (204) is electrically connected to the first conductive block (102) of the integrated passive matching circuit; The conductive plane of the integrated passive matching circuit is grounded.

5. The pre-matching circuit according to claim 4, characterized in that: When the first end of the first inductor (203) is connected to the drain of the transistor (201) and the source of the transistor (201) is grounded, the parasitic capacitance between the source of the transistor (201), the first inductor (203) and the first capacitor (204) form a first resonant circuit.

6. The pre-matching circuit according to any one of claims 4 to 5, characterized in that: The power transistor further includes: a second inductor (251); The first end of the second inductor (251) is electrically connected to the first end of the first capacitor (204).

7. The pre-matching circuit according to claim 6, characterized in that: When an external capacitor is connected between the second end of the second inductor (251) and the ground, the external capacitor and the second inductor (251) form a second resonant circuit, and the resonance point of the second resonant circuit is within the video bandwidth.

8. An output internal matching circuit of a power device, characterized in that: Used to implement the pre-matching circuit as claimed in claim 4, the output internal matching circuit of the power device comprises: the integrated passive matching circuit as claimed in any one of claims 1 to 3, the output internal matching circuit of the power device further comprises: a third wire group and a first output capacitor (302); One end of the third wire group is electrically connected to the first conductive block, the other end of the third wire group is electrically connected to the first end of the first output capacitor (302), and the second end of the first output capacitor (302) is electrically connected to the conductive plane.

9. The output internal matching circuit according to claim 8, characterized in that: The output internal matching circuit of the power device further includes: a fourth wire group and a first lead (309); The first end of the fourth wire group is electrically connected to the first end of the first output capacitor (302), and the second end of the fourth wire group is electrically connected to the first end of the first lead (309).

10. The output internal matching circuit according to any one of claims 8 to 9, characterized in that: The second conductive block extends to form a second lead (304); when the first conductive block is electrically connected to the drain of the transistor, the second conductive block serves as the output end of the transistor.

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