Ultraviolet and ozone cleaning device

Abstract

A cleaning apparatus for cleaning a substrate, wherein the substrate is in contact with ozone water and the substrate and ozone water are irradiated with UV electromagnetic radiation from a UV lamp within a cleaning chamber; wherein greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm. A method of cleaning a substrate is also presented.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to a cleaning system, and more particularly, to an ultraviolet and ozone cleaning system. Background Art

[0002] Substrates used in the semiconductor manufacturing industry are often cleaned to remove unwanted materials, such as contaminants or other unwanted particles that are generated thereon during processing. Substrates can include semiconductor wafers, chamber components, photomasks, and the like.

[0003] The substrate can be cleaned with ozone water irradiated with ultraviolet light. Such water can be irradiated through an ultraviolet radiation source that emits ultraviolet radiation. However, the inventors have observed that some ultraviolet ozone water cleaning devices and methods undesirably contribute to the removal or alteration of additional materials other than the contaminants to be cleaned. The removal or alteration of the additional materials may cause defects in the substrate.

[0004] Accordingly, the inventors provide improved cleaning devices and methods for cleaning substrates. Summary of the Invention

[0005] Embodiments of devices and methods for cleaning substrates are provided herein. In some embodiments, a method of cleaning a substrate includes contacting the substrate with ozone water and irradiating the substrate and the ozone water with UV electromagnetic radiation from a UV lamp within a cleaning chamber, wherein greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm.

[0006] In some embodiments, a method of cleaning a substrate includes contacting the substrate with ozone water and irradiating the substrate and the ozone water with UV electromagnetic radiation from a low-pressure mercury UV lamp within a cleaning chamber, the cleaning chamber further including a thermocouple configured to determine the temperature of the UV lamp; and a UV detector, and the UV lamp is arranged in thermally communicating with a controlled flow of a cooling fluid, wherein the flow of the cooling fluid is controlled at least in part based on the temperature of the low-pressure mercury UV lamp and a signal generated by the UV detector such that greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm.

[0007] In an embodiment, a cleaning apparatus for cleaning a substrate includes a UV lamp assembly that includes a UV lamp disposed above a substrate support disposed within a cleaning chamber, wherein the UV lamp assembly is configured such that in operation, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength greater than or equal to about 280 nm, an inlet for receiving supplied ozone water, and an outlet disposed above the substrate support for discharging the ozone water irradiated by the UV lamp assembly to contact the substrate disposed on the substrate support, wherein the UV electromagnetic radiation emitted by the UV lamp assembly contacts the ozone water and the substrate within the cleaning chamber.

[0008] Other and further embodiments of the present disclosure are described below. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Embodiments of the present disclosure, briefly outlined above and discussed in more detail below, may be understood by reference to the illustrative embodiments of the present disclosure depicted in the accompanying drawings. However, the drawings illustrate only typical embodiments of the present invention and are therefore not to be considered limiting of scope, as the present invention may admit to other equally effective embodiments.

[0010] Figure 1 A schematic diagram of a multi-chamber processing tool having a cleaning chamber in accordance with at least some embodiments of the present invention is depicted.

[0011] Figure 2 For Figure 1 A schematic diagram of a cleaning apparatus within the cleaning chamber of the multi-chamber processing tool shown.

[0012] Figure 3 A cleaning workflow employing the Figure 2 cleaning apparatus shown in accordance with at least some embodiments of the present invention is depicted.

[0013] For ease of understanding, where possible, the same reference numerals have been used to indicate identical elements common to the figures. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further recitation. DETAILED DESCRIPTION

[0014] For the purposes herein, the terms UV electromagnetic radiation and UV light are used interchangeably and refer to electromagnetic radiation having a wavelength from about 200 nm to about 400 nm.

[0015] Embodiments of a cleaning chamber for cleaning a substrate are provided. The cleaning chamber is configured to clean a substrate after the substrate has undergone a wet cleaning process to remove unwanted particles or residues. The substrate can be, for example, a semiconductor wafer, a photomask, etc. In the example of a photomask, photoresist can remain on the substrate. Flowing ozonated water irradiated with ultraviolet light over the photoresist causes the photoresist to separate from the photomask. The dissociated residues and water can then be removed from the interior volume of the cleaning chamber.

[0016] In an embodiment, a method of cleaning a substrate includes contacting the substrate with ozonated water and irradiating the substrate and the ozonated water with UV electromagnetic radiation from a UV lamp within a cleaning chamber; wherein greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm.

[0017] In some such embodiments, at least a portion of the ozonated water is irradiated with UV electromagnetic radiation prior to the ozonated water contacting the substrate.

[0018] In an embodiment, the UV lamp is set in thermally communicative connection with a controlled flow of a cooling fluid, and wherein the method further includes controlling the flow of the cooling fluid such that greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp has a wavelength greater than or equal to about 280 nm. In some such embodiments, the cleaning chamber further includes a thermocouple configured to determine the temperature of the UV lamp; and wherein the method further includes controlling the flow of the cooling fluid at least in part based on the temperature of the UV lamp. In some embodiments, the cleaning chamber further includes a UV detector, and wherein the method further includes controlling the flow of the cooling fluid at least in part based on a signal generated by the UV detector. In an embodiment, the cooling fluid makes physical contact with at least a portion of the UV lamp.

[0019] In an embodiment, the UV lamp is configured such that when the temperature of the UV lamp is within a first temperature range, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp will have a wavelength less than or equal to 270 nm; when the temperature of the UV lamp is within an operating temperature range, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp will have a wavelength greater than or equal to 280 nm; wherein the lower limit of the operating temperature range is greater than the upper limit of the first temperature range.

[0020] In an embodiment, the UV lamp includes a coating configured to produce a red shift in the wavelength of the UV electromagnetic radiation. In some embodiments, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the lamp assembly has a wavelength greater than or equal to about 310 nm and less than or equal to about 370 nm. In some embodiments, greater than or equal to about 50% of the UV electromagnetic waves have a wavelength greater than or equal to about 310 nm and less than or equal to about 320 nm. In some embodiments, greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 365 nm and less than or equal to about 375 nm.

[0021] In one embodiment, a method of cleaning a substrate includes contacting the substrate with ozone water and irradiating the substrate and the ozone water with UV electromagnetic radiation from a low-pressure mercury UV lamp within a cleaning chamber; the cleaning chamber further includes a thermocouple configured to determine the temperature of the UV lamp; a UV detector, and the UV lamp is arranged in thermal communication with a controlled flow of a cooling fluid; wherein the flow of the cooling fluid is controlled based at least in part on the temperature of the low-pressure mercury UV lamp and the signal generated by the UV detector such that greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm.

[0022] In some such embodiments, the cleaning apparatus includes a UV lamp assembly that includes a UV lamp disposed above a substrate support disposed within the cleaning chamber, wherein the UV lamp assembly is configured such that greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly during operation has a wavelength greater than or equal to about 280 nm; an inlet for receiving a supply of ozone water; and an outlet disposed above the substrate support for discharging the ozone water irradiated by the UV lamp assembly to contact a substrate disposed on the substrate support; wherein the UV electromagnetic radiation emitted by the UV lamp assembly contacts the ozone water and the substrate within the cleaning chamber.

[0023] In some embodiments, the cleaning apparatus includes a coating disposed on the UV lamp to be configured to produce a red shift in the wavelength of the UV electromagnetic radiation, configured to remove UV electromagnetic radiation having a wavelength below 280 nm; or configured to perform a combination of the foregoing two.

[0024] In some embodiments, the cleaning apparatus includes an optical filter to be configured to produce a red shift in the wavelength of the UV electromagnetic radiation, configured to remove UV electromagnetic radiation having a wavelength below 280 nm; or configured to perform a combination of the foregoing two.

[0025] In some embodiments, the cleaning apparatus includes a UV detector and a UV lamp in thermal communication with a controlled flow of a cooling fluid; configured such that during operation, the flow of the cooling fluid is controlled at least in part based on the response of the UV detector.

[0026] In some embodiments, the apparatus includes a thermocouple configured to determine the temperature of the UV lamp; and is configured such that in operation, the flow of the cooling fluid is controlled at least in part based on the response of the thermocouple (e.g., the temperature of the UV lamp).

[0027] In an embodiment, the UV lamp of the cleaning apparatus is a low-pressure mercury UV lamp.

[0028] Figure 1 Depicted is a schematic diagram of a multi-chamber processing tool 100 having one or more cleaning chambers 130 ( Figure 1 three are shown in) according to at least some embodiments of the present inventive concept. The multi-chamber processing tool 100 described below is shown in an exemplary configuration and other configurations may also be utilized. The multi-chamber processing tool 100 generally includes a factory interface 102, a transfer chamber 106 coupled to the factory interface 102, and a plurality of processing chambers 105, where the processing chambers 105 include cleaning chambers 130 coupled to the transfer chamber 106. The factory interface 102 includes a plurality of load ports 104 for receiving one or more substrates 112. The one or more substrates 112 may be semiconductor wafers, carrier substrates, photomasks, etc. In some embodiments, the plurality of load ports 104 are arranged along a common side of the factory interface 102. A factory interface robot 110 may be disposed within the internal volume 108 of the factory interface 102 to reciprocate or transport the one or more substrates 112 from the plurality of load ports 104 to the transfer chamber 106. The factory interface robot 110 may be configured for rotational movement, lateral movement, or both within the internal volume 108.

[0029] The transfer chamber 106 is coupled to the factory interface 102. In some embodiments, the transfer chamber 106 is disposed on a side of the factory interface 102 opposite to the plurality of load ports 104. The transfer chamber 106 includes a transfer robot 116 disposed therein for reciprocating the one or more substrates 112 received from the factory interface robot 110 to one or more processing chambers 105 coupled to the transfer chamber. The transfer robot 116 may be configured for rotational movement, lateral movement, or both. For example, the lateral movement may be achieved through tracks on the bottom surface of the transfer chamber 106 or through wheels or tracks beneath the transfer robot 116. The arm 122 of the transfer robot 116 may extend and retract to move the one or more substrates 112 into and out of the respective chambers of the plurality of processing chambers 105.

[0030] In some embodiments, transfer robot 116 is configured to receive one or more substrates 112 directly from factory interface robot 110. In some embodiments, transfer robot 116 is configured to receive one or more substrates 112 indirectly from factory interface robot 110. For example, in some embodiments, one of factory interface 102 or transfer chamber 106 includes buffer 120, and buffer 120 is configured to hold one or more of one or more substrates 112. Transfer robot 116 can be configured to transfer one or more substrates 112 to buffer 120, and transfer robot 116 can be configured to transfer one or more substrates 112 from buffer 120 to multiple processing chambers 105 and back to buffer 120 from multiple processing chambers 105.

[0031] Transfer chamber 106 can have one or more environmental control devices. For example, the air flow openings in transfer chamber 106 can include filters to filter the air flow entering transfer chamber 106. Other environmental controls can include one or more of humidity control, static control, temperature control, or pressure control.

[0032] One or more processing chambers 105 can be coupled orthogonally to transfer chamber 106 or can be coupled at an angle relative to transfer chamber 106. Multiple processing chambers 105 can be hermetically joined to transfer chamber 106. Transfer chamber 106 typically operates at atmospheric pressure, but can also be configured to operate at vacuum pressure. Multiple processing chambers 105 are configured to perform one or more processing steps on one or more substrates 112 processed in multi-chamber processing tool 100. For example, multiple processing chambers 105 can include one or more cleaning chambers 130 ( Figure 1 three are shown), which are configured to clean one or more substrates 112 with a liquid (such as water). Multiple processing chambers 105 can include one or more dry cleaning chambers 140 ( Figure 1 two are shown), which are configured to perform a dry cleaning process on one or more substrates 112, for example, by plasma etching or plasma ashing. One or more processing chambers 105 include at least one baking chamber (such as baking chamber 150), which is configured to heat one or more substrates to remove residues or mist left after wet or dry cleaning processes. In some embodiments, one or more cleaning chambers 130 are provided on a different side of transfer chamber 106 from one or more dry cleaning chambers 140.

[0033] Figure 2 is accommodated in Figure 1 Schematic diagram of cleaning device 200 in cleaning chamber 130 (also referred to as wet cleaning chamber) of multi-chamber processing tool 100. In some embodiments, cleaning chamber 130 can form part of cleaning device 200.Figure 2 In the figure, a cleaning apparatus 200 for cleaning a substrate 112 is shown. Although described in connection with a specific cleaning chamber 130 in the multi-chamber processing tool 100 shown above, the cleaning apparatus 200 can be housed in a cleaning chamber having a different configuration than that which can be housed in a processing tool having other configurations, including being used as a stand-alone tool without being coupled to a multi-chamber processing tool.

[0034] The cleaning apparatus 200 for cleaning a substrate includes a UV lamp 202 disposed within a UV lamp assembly 204. The cleaning apparatus 200 also includes an inlet 208 for receiving an ozone water supply, and an outlet 206 (e.g., a nozzle) disposed above the substrate 112 on a substrate support 236 for discharging the ozone water 208 irradiated by the UV lamp assembly 204 into contact with the substrate 112 disposed on the substrate support 236.

[0035] In an embodiment, the UV electromagnetic radiation 212 emitted by the UV lamp assembly 204 contacts the ozone water 208 and the substrate 112 within the cleaning chamber. The inlet for the ozone water, through which the ozone water 208 flows from an external source, then contacts the UV electromagnetic radiation 210 on at least a portion of the substrate in contact with the substrate 112 along a flow path 214. In an embodiment, the UV lamp 202 is configured to emit ultraviolet radiation that contacts both the substrate 112 and the ozone water 208.

[0036] In an embodiment, the UV lamp 202 can be a low-pressure mercury ultraviolet lamp. In Figure 2 the embodiment shown, the UV lamp assembly 204 houses the UV lamp 202. In Figure 2 the embodiment shown, the UV lamp assembly 204 defines a cooling chamber 216 surrounding the UV lamp 202. In Figure 2 the embodiment shown, the UV lamp assembly 204 can include an upper cover 218 and a lower cover 220 that are sealingly joined together. The upper cover 218 can be formed of polytetrafluoroethylene (PTFE), and the lower cover 220 can be formed of quartz, which permits the transmission of the UV electromagnetic radiation 212 emitted by the UV lamp 202. The UV lamp can be set in thermally communicating with a controlled flow of a cooling fluid 222 (e.g., via a flow controller 224), where the flow of the cooling fluid 222 is controlled to control the temperature of the UV lamp 202. The UV lamp assembly 204 can have a cooling fluid inlet 226 that is separated from a cooling fluid outlet 228 along a flow path where the cooling fluid 222 is in physical contact with the UV lamp 202. The cooling fluid inlet 226 and the cooling fluid outlet 228 can be formed in the upper cover 218, as Figure 2As shown in the embodiments. The cooling fluid inlet 226 may be fluidly connected to a source of the cooling fluid 222, such as cold dry air. The cooling fluid outlet 228 may be fluidly connected to a cooling fluid discharge device. The cooling fluid inlet 226 and the cooling fluid outlet 228 are in fluid communication with the cooling chamber 216, which is configured to convey the cooling fluid between the cooling fluid inlet 226 and the cooling fluid outlet 228 and above the UV lamp 202. The flow of the cooling fluid over the UV lamp 202 cools the UV lamp 202 to control the temperature of the UV lamp 202.

[0037] In an embodiment, the UV lamp assembly 204 further includes a thermocouple 230 or other similar element configured to determine the temperature of the UV lamp 202. In other embodiments, the UV lamp 202 may be configured with a thermocouple or other similar element (not shown) to determine the temperature of the UV lamp 202.

[0038] As discussed in more detail below, the temperature of the UV lamp 202 can be controlled by controlling the flow of the cooling fluid 222 to affect the peak amplitude of the emission spectrum emitted by the UV lamp 202. For example, a lower temperature may reduce the peak amplitude, while a higher UV lamp temperature may cause the emitted UV electromagnetic radiation (UV light) to redshift to longer wavelength UV light. In an embodiment, the cleaning device 200 may include a UV detector 232 configured to measure at least a portion of the UV spectrum emitted by the UV lamp assembly 204, such as to monitor the peak amplitude of the emission spectrum of the UV lamp 202, which can be used as feedback to adjust the temperature of the UV lamp 202, i.e., by adjusting parameters of the cooling fluid passing through the cooling chamber 216, such as the cooling fluid flow rate and the inlet temperature of the cooling fluid. The UV detector 232 may be connected to the UV lamp assembly 204, as Figure 2 shown, or may be located elsewhere, as long as the UV detector 232 is capable of measuring (e.g., sensing) at least a portion of the UV spectrum of the UV light emitted by the UV lamp assembly 204 such that the UV detector 232 and the UV lamp 202 are in controlled flow thermal communication (e.g.) via the flow controller 224 of the cooling fluid 222; which is also configured such that in operation, the flow of the cooling fluid 222 is controlled at least in part based on the response of the UV detector 232.

[0039] The cleaning device 200 may further include an upper reflector 234, which may be disposed within the cooling chamber 216 of the UV lamp assembly 204, as Figure 2 shown. The upper reflector 234 extends along and above the UV lamp 202. The upper reflector 234 may be formed of aluminum or an aluminum alloy or any other suitable material capable of reflecting ultraviolet radiation.

[0040] The cleaning apparatus 200 may further include a substrate support 236 located below the UV lamp assembly 204. The substrate support 236 may be rotatably connected to the cleaning chamber 130. The substrate support 236 may be configured to rotate about a central axis, as Figure 2 shown, where the substrate 112 is irradiated with UV electromagnetic radiation 212 and with UV-irradiated ozone water 208a flowing onto the substrate 112.

[0041] The cleaning chamber 130 may have a slit valve 131, which is operable to open and close to allow the substrate 112 (e.g., via a transfer robot 116 ( Figure 1 )) to be introduced into the interior of the cleaning chamber 130 or removed from the interior of the cleaning chamber 130.

[0042] In an embodiment, the UV lamp 202 may be a low-pressure mercury UV lamp, which is configured to operate at about 30 to 150 watts and emit ultraviolet radiation having a spectrum defined by a peak amplitude at wavelengths between 240 nm and 310 nm at a designed operating temperature. In some embodiments, the lamp emits ultraviolet radiation with a peak ultraviolet emission at about 254 nm. In an embodiment, the UV lamp 202 is configured such that when the temperature of the UV lamp is within a first temperature range, which may be a designed temperature range intended as the manufacturer-specified temperature range, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp is less than or equal to 270 nm, e.g., about 254 nm, and when the temperature of the UV lamp is within an operating temperature range (suitable for use according to the embodiments disclosed herein), greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp is greater than or equal to 280 nm, where the lower limit of the operating temperature range is greater than the upper limit of the first temperature range.

[0043] Low-pressure mercury ultraviolet lamps may be characterized as lamps that emit electromagnetic radiation in the UV-C region, which has a peak or maximum intensity of UV light at wavelengths of about 200 nm to 280 nm, where most low-pressure mercury UV lamps emit electromagnetic radiation having a peak or maximum intensity of UV light at a wavelength of about 253 nm to 255 nm (e.g., 254 nm).

[0044] However, the inventors have found that by controlling the temperature of the UV lamp (generally at a temperature higher than the temperature for generating UV-C electromagnetic radiation), these lamps are also capable of emitting UV electromagnetic radiation in the UV-B region, which has a peak or maximum intensity of UV light at wavelengths of about 280 nm to 320 nm, where the maximum intensity is concentrated at ~300 nm or ~315 nm, or in the UV-A region at wavelengths of about 320 nm to 400 nm having a peak or maximum intensity of UV light, where the maximum intensity is concentrated at ~365 nm to 370 nm.

[0045] The inventors have also found that the reaction or interaction of ozone water with UV light increases the reaction rate for removing contaminants on a substrate with light of a lower wavelength, and thus ozone water irradiated with higher energy ultraviolet electromagnetic energy is more reactive. However, in addition to removing organic contaminants from the substrate (e.g., from photoresist or other processes), ozone water / UV irradiation at the UV-C wavelength also removes chromium or other metals that are specifically provided on the surface of the substrate as part of the final product.

[0046] The inventors have observed that by increasing the wavelength of the UV light, i.e., decreasing the energy of the UV light, organic contaminants can be sufficiently removed from the substrate, while the rate of removal or destruction of chromium or other metals present is greatly reduced. Thus, in an embodiment, the cleaning apparatus for cleaning a substrate is configured such that during operation, greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm. In Figure 2 the illustrated embodiment, the UV lamp 202 is provided in thermal communication with a controlled flow of a cooling fluid 222, and the flow of the cooling fluid 222 is controlled (224) such that greater than or equal to about 50% of the UV electromagnetic radiation 212 emitted by the UV lamp 202 has a wavelength greater than or equal to about 280 nm.

[0047] In an embodiment, the cleaning chamber 130 further includes a thermocouple 230 configured to determine the temperature of the UV lamp 202; and the flow of the cooling fluid 222 is controlled at least in part based on the temperature of the UV lamp 202. In other embodiments, the cleaning chamber further includes a UV detector 232, and the cleaning chamber apparatus is configured to control the flow of the cooling fluid 222 at least in part based on a signal generated by the UV detector 232. In some embodiments, the cleaning chamber may include both a thermocouple and a UV detector.

[0048] In some embodiments, the cooling fluid 222 makes physical contact with at least a portion of the UV lamp 202, as Figure 2 illustrated. However, the UV lamp may be in thermal contact with the cooling fluid without making direct physical contact with the cooling fluid.

[0049] In an embodiment, the UV lamp is configured such that when the temperature of the UV lamp is within a first temperature range, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp is less than or equal to 270 nm; when the temperature of the UV lamp is within an operating temperature range, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp is greater than or equal to 280 nm; wherein the lower limit of the operating temperature range is greater than the upper limit of the first temperature range.

[0050] In some embodiments, the cleaning apparatus 200 for cleaning a substrate 112 includes an optical filter 240 configured to produce a red shift in the wavelength of UV electromagnetic radiation, configured to remove UV electromagnetic radiation having a wavelength below 280 nm; or configured to perform a combination of the foregoing two.

[0051] In an embodiment, the UV lamp 202 includes a coating 242 configured to produce a red shift in the wavelength of UV electromagnetic radiation.

[0052] Examples of suitable coatings include phosphors.

[0053] In some embodiments, the UV lamp assembly 204 is configured such that during operation, greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 310 nm and less than or equal to about 370 nm. In some embodiments, greater than or equal to about 50% of the UV electromagnetic waves have a wavelength greater than or equal to about 310 nm and less than or equal to about 320 nm. In some embodiments, greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 365 nm and less than or equal to about 375 nm.

[0054] Figure 3 A method 300 of cleaning a substrate 112 is shown, including contacting the substrate 112 with ozone water 208 and irradiating the substrate and the ozone water, which may include irradiating the ozone water 208a with UV electromagnetic radiation 212 from a UV lamp 202 (low-pressure mercury UV lamp in a cleaning chamber (block 302)), wherein the apparatus is controlled such that greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm (block 304).

[0055] In some embodiments, the control at block 304 includes controlling the flow of a cooling fluid in thermal communication with the UV lamp, wherein the cooling chamber includes a thermocouple configured to determine the temperature of the UV lamp; and a UV detector, and controlling the flow of the cooling fluid based at least in part on the temperature of the low-pressure mercury UV lamp, the signal generated by the UV detector, or both, such that greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm.

[0056] Embodiments

[0057] Accordingly, the present inventive disclosure includes the following embodiments, as well as other embodiments recited in the appended claims.

[0058] E1. A method of cleaning a substrate, comprising:

[0059] contacting the substrate with ozone water and irradiating the substrate and the ozone water with UV electromagnetic radiation from a UV lamp in a cleaning chamber;

[0060] Wherein greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm.

[0061] E2. The method according to embodiment E1, wherein at least a portion of the ozone water is irradiated with UV electromagnetic radiation before the ozone water contacts the substrate.

[0062] E3. The method according to embodiment E1 or E2, wherein the UV lamp is arranged in thermal communication with a controlled flow of a cooling fluid, and wherein the method further comprises controlling the flow of the cooling fluid such that greater than or equal to about 50% of the wavelength of the UV electromagnetic radiation emitted by the UV lamp is greater than or equal to about 280 nm.

[0063] E4. The method according to embodiments E1 to E3, wherein the cleaning chamber further comprises a thermocouple configured to determine the temperature of the UV lamp; and wherein the method further comprises controlling the flow of the cooling fluid at least in part based on the temperature of the UV lamp.

[0064] E5. The method according to embodiments E1 to E4, wherein the cleaning chamber further comprises a UV detector, and wherein the method further comprises controlling the flow of the cooling fluid at least in part based on a signal generated by the UV detector.

[0065] E6. The method according to embodiments E1 to E5, wherein the cooling fluid is in physical contact with at least a portion of the UV lamp.

[0066] E7. The method according to embodiments E1 to E6, wherein the UV lamp is configured such that when the temperature of the UV lamp is within a first temperature range, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp is less than or equal to 270 nm; and

[0067] when the temperature of the UV lamp is within an operating temperature range, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp is greater than or equal to 280 nm;

[0068] wherein the lower limit of the operating temperature range is greater than the upper limit of the first temperature range.

[0069] E8. The method according to embodiments E1 to E7, wherein the UV lamp comprises a coating configured to produce a red shift in the wavelength of the UV electromagnetic radiation.

[0070] E9. The method according to embodiments E1 to E8, wherein greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 310 nm and less than or equal to about 370 nm.

[0071] E10. The method according to embodiments E1 to E9, wherein greater than or equal to about 50% of the UV electromagnetic waves have a wavelength greater than or equal to about 310 nm and less than or equal to about 320 nm.

[0072] E11. The method according to embodiments E1 to E10, wherein greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 365 nm and less than or equal to about 375 nm.

[0073] E12. A method of cleaning a substrate according to embodiments E1 to E11, comprising:

[0074] contacting the substrate with ozone water and irradiating the substrate and the ozone water with UV electromagnetic radiation from a low-pressure mercury UV lamp in a cleaning chamber;

[0075] The cleaning chamber further includes a thermocouple configured to determine the temperature of the UV lamp; and a UV detector, and

[0076] The UV lamp is arranged in thermally communicating with a controlled flow of a cooling fluid;

[0077] wherein the flow of the cooling fluid is controlled at least in part based on the temperature of the low-pressure mercury UV lamp and the signal generated by the UV detector such that greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm.

[0078] E13. A method of cleaning a substrate, comprising:

[0079] contacting the substrate with ozone water and irradiating the substrate and the ozone water with UV electromagnetic radiation from a low-pressure mercury UV lamp in a cleaning chamber;

[0080] The cleaning chamber further includes a thermocouple configured to determine the temperature of the UV lamp; and a UV detector, and

[0081] The UV lamp is arranged in thermally communicating with a controlled flow of a cooling fluid;

[0082] wherein the flow of the cooling fluid is controlled at least in part based on the temperature of the low-pressure mercury UV lamp and the signal generated by the UV detector such that greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm.

[0083] E14. A cleaning apparatus for cleaning a substrate according to embodiments E1 to E13, comprising:

[0084] a UV lamp assembly including a UV lamp disposed above a substrate support disposed in a cleaning chamber, wherein the UV lamp assembly is configured such that in operation, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength greater than or equal to about 280 nm;

[0085] An inlet for receiving a supply of ozone water; and an outlet, disposed above the substrate support, for discharging the ozone water irradiated by the UV lamp assembly to contact a substrate disposed on the substrate support;

[0086] wherein the UV electromagnetic radiation emitted by the UV lamp assembly contacts the ozone water and the substrate in the cleaning chamber.

[0087] E15. The cleaning device for cleaning a substrate according to embodiment E14, comprising a coating disposed on the UV lamp to be configured to produce a red shift in the wavelength of the UV electromagnetic radiation, to be configured to remove UV electromagnetic radiation having a wavelength below 280 nm; or to be configured to perform a combination of the foregoing two.

[0088] E16. The cleaning device for cleaning a substrate according to embodiments E14 to E15, comprising an optical filter to be configured to produce a red shift in the wavelength of the UV electromagnetic radiation, to be configured to remove UV electromagnetic radiation having a wavelength below 280 nm; or to be configured to perform a combination of the foregoing two.

[0089] E17. The cleaning device for cleaning a substrate according to embodiments E14 to E16, comprising a UV detector and a UV lamp in thermal communication with a controlled flow of a cooling fluid; and being configured such that in operation, the flow of the cooling fluid is controlled at least in part based on the response of the UV detector.

[0090] E18. The cleaning device for cleaning a substrate according to embodiments E14 to E17, comprising a thermocouple configured to determine the temperature of the UV lamp; and being configured such that in operation, the flow of the cooling fluid is controlled at least in part based on the response of the UV detector.

[0091] E19. The cleaning device for cleaning a substrate according to embodiments E14 to E18, wherein the UV lamp is a low-pressure mercury UV lamp.

[0092] E20. The cleaning device for cleaning a substrate according to embodiments E14 to E19, being configured such that in operation, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength greater than or equal to about 310 nm and less than or equal to about 320 nm.

[0093] E21. The cleaning device for cleaning a substrate according to embodiments E14 to E19, being configured such that in operation, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength greater than or equal to about 365 nm and less than or equal to about 375 nm.

[0094] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from its basic scope.

Claims

1. A method of cleaning a substrate, the method comprising: contacting the substrate with ozone water and irradiating the substrate and the ozone water with UV electromagnetic radiation from a UV lamp in a cleaning chamber; wherein greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm.

2. The method of claim 1, wherein at least a portion of the ozone water is irradiated with the UV electromagnetic radiation before the ozone water contacts the substrate.

3. The method of claim 1, wherein the UV lamp is arranged in thermally communicating with a controlled flow of a cooling fluid, and wherein the method further comprises controlling the flow of the cooling fluid such that greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp has a wavelength greater than or equal to about 280 nm.

4. The method of claim 3, wherein the cleaning chamber further comprises a thermocouple configured to determine the temperature of the UV lamp; and wherein the method further comprises controlling the flow of the cooling fluid at least in part based on the temperature of the UV lamp.

5. The method of claim 3, wherein the cleaning chamber further comprises a UV detector, and wherein the method further comprises controlling the flow of the cooling fluid at least in part based on a signal generated by the UV detector.

6. The method of claim 3, wherein the cooling fluid is in physical contact with at least a portion of the UV lamp.

7. The method of claim 1, wherein the UV lamp comprises a coating configured to produce a red shift in the wavelength of the UV electromagnetic radiation.

8. The method according to any one of claims 1-7, wherein the UV lamp is configured such that when the temperature of the UV lamp is within a first temperature range, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp is less than or equal to 270 nm; and when the temperature of the UV lamp is within an operating temperature range, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp is greater than or equal to 280 nm; Among them, the lower limit of the operating temperature range is greater than the upper limit of the first temperature range.

9. The method according to any one of claims 1-7, wherein greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 310 nm and less than or equal to about 370 nm.

10. The method according to any one of claims 1-7, wherein greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 310 nm and less than or equal to about 320 nm.

11. The method according to any one of claims 1-7, wherein greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 365 nm and less than or equal to about 375 nm.

12. A method of cleaning a substrate, the method comprising: contacting the substrate with ozone water and irradiating the substrate and the ozone water with UV electromagnetic radiation from a low-pressure mercury UV lamp in a cleaning chamber; the cleaning chamber further comprises a thermocouple configured to determine the temperature of the UV lamp; and a UV detector; and The UV lamp is arranged to be in thermal communication with a controlled flow of a cooling fluid; wherein the flow of the cooling fluid is controlled at least in part based on the temperature of the low-pressure mercury UV lamp and the signal generated by the UV detector such that greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength greater than or equal to about 280 nm.

13. A cleaning apparatus for cleaning a substrate, the cleaning apparatus for cleaning a substrate comprising: a UV lamp assembly including a UV lamp disposed above a substrate support disposed within a cleaning chamber, wherein the UV lamp assembly is configured such that in operation, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength greater than or equal to about 280 nm; a water inlet for receiving a supply of ozone water; and a water outlet disposed above the substrate support for discharging the ozone water irradiated by the UV lamp assembly to contact the substrate when the substrate is disposed on the substrate support; wherein the UV lamp assembly is configured such that in operation, the UV electromagnetic radiation emitted by the UV lamp assembly contacts the ozone water and the substrate within the cleaning chamber.

14. The cleaning apparatus for cleaning a substrate according to claim 13, the cleaning apparatus for cleaning a substrate comprising a coating disposed on the UV lamp, the coating being configured to produce a red shift of the wavelength of the UV electromagnetic radiation, being configured to remove UV electromagnetic radiation having a wavelength below 280 nm; or being configured to perform a combination of the foregoing two.

15. The cleaning apparatus for cleaning a substrate according to claim 13, the cleaning apparatus for cleaning a substrate comprising an optical filter, the optical filter being configured to produce a red shift of the wavelength of the UV electromagnetic radiation, being configured to remove UV electromagnetic radiation having a wavelength below 280 nm, or being configured to perform a combination of the foregoing two.

16. The cleaning apparatus for cleaning a substrate according to claim 13, the cleaning apparatus for cleaning a substrate comprising a UV detector and a UV lamp in thermal communication with a controlled flow of a cooling fluid, the UV detector and the UV lamp being configured such that in operation, the flow of the cooling fluid is controlled at least in part based on the response of the UV detector.

17. The cleaning apparatus for cleaning a substrate according to claim 16, the cleaning apparatus for cleaning a substrate comprising a thermocouple configured to determine the temperature of the UV lamp; the thermocouple being configured such that in operation, the flow of the cooling fluid is controlled at least in part based on the response of the UV detector.

18. The cleaning apparatus for cleaning a substrate according to claim 13, wherein the UV lamp is a low-pressure mercury UV lamp.

19. The cleaning apparatus for cleaning a substrate according to any one of claims 13-18, the cleaning apparatus for cleaning a substrate being configured such that in operation, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength greater than or equal to about 310 nm and less than or equal to about 320 nm.

20. The cleaning device for cleaning a substrate according to any one of claims 13-18, wherein the cleaning device for cleaning a substrate is configured such that in operation, greater than or equal to about 50% of the UV electromagnetic radiation emitted by the UV lamp assembly has a wavelength greater than or equal to about 365 nm and less than or equal to about 375 nm.

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