Multi-tube semiconductor laser

Abstract

The invention discloses a multi-tube semiconductor laser, which comprises a collimation light path group, a reflector group and a special-shaped prism, and is characterized in that the collimation light path group emits a plurality of collimation light beams along the same direction; the reflecting mirror group is arranged corresponding to the collimation light path group, so that each collimation light beam turns on a plane parallel to the surface of the bottom plate and is lifted relative to the surface of the bottom plate, and collimation light beam groups which are arranged at intervals in the fast axis direction are formed; and the special-shaped prism compensates the inclination of the slow axis of the collimated light beam group and simultaneously enables the collimated light beam group to be emitted in parallel to the surface of the bottom plate. The multi-tube semiconductor laser provided by the invention can correct the inclination of the collimated light beams, so that the beam combination array of the collimated light beams is tightly arranged.

Description

Technical Field

[0001] The present invention relates to the field of lasers, and in particular to a multi-tube semiconductor laser. Background Art

[0002] As a pump source for fiber lasers and a direct light source for industrial processing, there is an increasing demand for the output power of multi-tube high-power semiconductor lasers. In dealing with their output power, it is mainly necessary to solve the heat dissipation problem of single-tube semiconductor lasers and the problem of low beam coupling efficiency.

[0003] There are mainly two schemes in the prior art for designing the beam coupling of multi-tube semiconductor lasers: Scheme ①: Install single-tube semiconductor lasers on steps at different heights and simply superimpose the output beams spatially. Although the above scheme can achieve efficient beam coupling, since the distances between different single-tube semiconductor lasers and the heat dissipation surface are different, the heat dissipation effect is not ideal. In addition, as the number of single-tube semiconductor lasers increases, the number of steps increases, which in turn makes the overall structure of the coupling device larger, the processing difficulty larger, and the use cost higher.

[0004] Scheme ②: Install single-tube semiconductor lasers on the same height plane so that the distances between all single-chip collimation units and the heat dissipation surface are the same, and there is no difference in heat dissipation between different single-tube semiconductor lasers. However, the single-tube semiconductor laser in front of such an array structure will block the collimated light of the single-tube semiconductor laser behind, and beam superposition cannot be performed. To avoid light blocking, the output light of the single-chip collimation unit needs to form a certain elevation angle so that the light output by the latter single-tube semiconductor laser can pass over the optical element of the former single-tube semiconductor laser.

[0005] In the prior art, the elevation angle is formed by adjusting a 45-degree reflector. In this way, when obtaining the superimposed beam, the slow axis direction of the collimated light output by the single-tube semiconductor laser will rotate (beam tilt occurs), resulting in that the combined light of the collimated beam combining array can only form an oblique arrangement and cannot achieve beam close packing.

[0006] To solve this problem, the patent with the application number 201811227514.5 proposes to tilt the bottom plate by a preset angle, and the slow axes of each single-tube semiconductor laser also obtain a preset tilt relative to the horizontal plane. This preset tilt cancels out the slow axis rotation caused by the elevation angle formed by the 45-degree reflector, obtaining a beam arranged parallel to the horizontal plane and achieving beam close packing.

[0007] However, this scheme itself has high requirements for the angle accuracy of the inclined surface of the bottom plate. Due to using inclined surface heat dissipation, under the limitation of the thickness of the laser, the heat dissipation effects of single-tube semiconductor lasers at different inclined surface positions are different. Summary of the Invention

[0008] In view of the disadvantages of the prior art described above, the purpose of the present application is to provide a multi-tube semiconductor laser that can correct the tilt of the collimated beam and make the beam combining array of the collimated beam closely arranged.

[0009] To achieve the above object and other related objects, the present application provides a multi-tube semiconductor laser, including: A collimated optical path group, including a plurality of collimated optical paths arranged at intervals on the surface of the bottom plate, and each collimated optical path emits a plurality of collimated beams in the same direction; A mirror group, correspondingly arranged with the collimated optical path group, turning each of the collimated beams in a plane parallel to the surface of the bottom plate and lifting it relative to the surface of the bottom plate to form a collimated beam group arranged at intervals in the fast axis direction; A special-shaped prism, compensating for the slow axis tilt of the collimated beam group and simultaneously making the collimated beam group emit parallel to the surface of the bottom plate.

[0010] Optionally, the incident surface of the special-shaped prism satisfies the following formulas [1] and [2]:

[0011] Wherein, α represents the turning angle; β represents the lifting angle; ζ represents the angle between the incident surface and the optical axis in a plane parallel to the surface of the bottom plate; δ represents the angle between the incident surface and the surface of the bottom plate in a plane perpendicular to the surface of the bottom plate and perpendicular to the optical axis; n is the ratio of the refractive index of the special-shaped prism to the refractive index of its surrounding environment.

[0012] Optionally, a reflecting surface is further arranged between the incident surface and the exit surface of the special-shaped prism, and when each collimated beam is incident on the reflecting surface, it deflects -α in a plane parallel to the surface of the bottom plate.

[0013] Optionally, a reflecting surface is further arranged between the incident surface and the exit surface of the special-shaped prism, and when each collimated beam is incident on the reflecting surface, it deflects 180° - α in a plane parallel to the surface of the bottom plate.

[0014] Optionally, the mirror group turns each of the collimated beams 90° in a plane parallel to the surface of the bottom plate.

[0015] Optionally, the mirror group turns each of the collimated beams 45° in a plane parallel to the surface of the bottom plate.

[0016] Optionally, the multi-tube semiconductor laser includes a plurality of collimated optical path groups, and the collimated beams emitted by the plurality of collimated optical path groups are located in the same plane.

[0017] Optionally, the bottom plate adopts a stepped structure, the surface of the bottom plate includes a plurality of stepped surfaces, and each collimated light path group is respectively arranged on stepped surfaces at different heights.

[0018] Optionally, the mirror group includes a plurality of mirrors spaced apart on the surface of the bottom plate, and each mirror is arranged corresponding to each collimated light path one by one.

[0019] Optionally, the collimated light path includes a laser diode, a fast-axis collimating mirror and a slow-axis collimating mirror; The laser emitted by the laser diode is fast-axis collimated and slow-axis collimated by the fast-axis collimating mirror and the slow-axis collimating mirror in sequence to form the collimated beam.

[0020] As described above, a multi-tube semiconductor laser provided by the present application is provided with a special-shaped prism, which can not only correct the slow-axis tilt of the collimated beam group caused by the mirror, but also make the collimated beam group incident on the bottom plate surface parallel to the bottom plate surface and exit, effectively solving the problem that the collimated beam group cannot be closely arranged due to the slow-axis tilt. Description of the Drawings

[0021] One or more embodiments are exemplarily illustrated by pictures in the corresponding drawings. These exemplary illustrations do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings are represented as similar elements, unless otherwise stated, the drawings in the drawings do not constitute a proportional limitation.

[0022] Figure 1 It is a schematic structural diagram of the multi-tube semiconductor laser 1A provided in the embodiment.

[0023] Figure 2 It is a schematic optical path diagram of the collimated beam group emitted by the mirror group in the embodiment incident on the special-shaped prism.

[0024] Figure 3 It is a schematic spot diagram of the collimated beam group with slow-axis tilt and trapezoidal spot distribution provided in the embodiment.

[0025] Figure 4 It is a schematic spot diagram of the collimated beam group with slow-axis tilt compensated and trapezoidal spot distribution corrected provided in the embodiment.

[0026] Figure 5 It is a schematic structural diagram of the first special-shaped prism provided in the embodiment.

[0027] Figure 6 It is a schematic diagram of the refraction of light rays on the incident surface of the special-shaped prism viewed from above in the embodiment.

[0028] Figure 7It is a schematic diagram of the light refraction on the incident surface of the special-shaped prism in the front view provided in the embodiment.

[0029] Figure 8 It is a schematic diagram of the structure of the multi-tube semiconductor laser 1B provided in the embodiment.

[0030] Figure 9 It is a schematic diagram of the structure of the second special-shaped prism provided in the embodiment.

[0031] Figure 10 It is a schematic diagram of the optical path when the reflecting surface of the special-shaped prism in the top view deflects the collimated beam by 180-α in the embodiment.

[0032] Figure 11 It is a schematic diagram of the optical path when the reflecting surface of the special-shaped prism in the top view deflects the collimated beam by -α in the embodiment.

[0033] Figure 12 It is a schematic diagram of the structure of the multi-tube semiconductor laser 1C provided in the embodiment.

[0034] Figure 13 It is a schematic diagram of the structure of the multi-tube semiconductor laser 1D provided in the embodiment. Detailed implementation manners

[0035] For the convenience of understanding the present invention, the present invention will be described in more detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that when an element is expressed as "fixed to" another element, it can be directly on the other element, or there can be one or more intermediate elements therebetween. When an element is expressed as "electrically connected to" another element, it can be directly connected to the other element, or there can be one or more intermediate elements therebetween. The terms "upper", "lower", "inner", "outer", "bottom", etc. used in this specification indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention. In addition, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0036] Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by those skilled in the technical field to which the present invention belongs. The terms used in the specification of the present invention are only for the purpose of describing specific embodiments and are not used to limit the present invention. The term "and / or" used in this specification includes any and all combinations of one or more of the related listed items.

[0037] In addition, the technical features involved in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0038] This embodiment first provides a structural decomposition description of a multi-tube semiconductor laser 1A with a collimated optical path group and a mirror group arranged on one bottom plate plane. As Figure 1 shown, the multi-tube semiconductor laser 1 includes a collimated optical path group 10, a mirror group 20, and a special-shaped prism 30. In the application structure, a focusing lens group 40 and an output optical fiber 50 need to be arranged behind the special-shaped prism 30.

[0039] The collimated optical path group 10 is used to form multiple collimated light beams Ib1~Ibn that are distributed in the same plane and have the same propagation direction. As Figure 1 shown, it is usually composed of three parts: laser diodes 111~11n, fast-axis collimating mirrors 121~12n, and slow-axis collimating mirrors 131~13n. The laser diodes 111~11n are arranged at intervals on the surface of the bottom plate and emit laser beams Ia1~Ian in the same plane and in the same direction. After passing through the fast-axis collimating mirrors 121~12n and the slow-axis collimating mirrors 131~13n, the laser beams Ia1~Ian form collimated light beams Ib1~Ibn. For a single collimated light beam Ibn, it includes a fast axis and a slow axis. The fast axis is defined as the direction perpendicular to the laser diode junction plane (the laser diode junction plane is parallel to the bottom plate surface), and the slow axis is defined as the direction parallel to the laser diode junction plane.

[0040] The mirror group 20 combines the collimated light beams Ib1~Ibn emitted from the collimated optical path group 10 in the fast-axis direction of the light beam to form a collimated light beam group Ic. It includes mirrors 201~20n, and the mirrors 201~20n are arranged in one-to-one correspondence with the collimated light beams Ib1~Ibn. As Figure 1 and 2 shown, since it is necessary to combine the beams in the fast-axis direction, the mirrors 201~20n not only need to turn each collimated light beam Ib1~Ibn by a certain angle in a plane parallel to the bottom plate surface relative to the original transmission direction, and this turning angle is named the turning angle α; but also need to lift by an angle β relative to the bottom plate surface, and this lifting angle is named the lifting angle β. Due to the effect of the lifting angle β, when the collimated light beam Ibn is reflected by the mirror 20n, it can obliquely cross the adjacent mirror 20n-1, so that the mirror 20n-1 will not obstruct its optical path transmission, and it can make each collimated light beam Ib1~Ibn be arranged at intervals in the fast-axis direction along the same angular direction to form a collimated light beam group Ic. However, this will also bring the problems mentioned in the background technology. As Figure 3 shown, it will cause the slow axis of the collimated light beam to tilt (deflect).

[0041] The special-shaped prism 30 has multiple functions: For the first function, since the collimated beam group Ic emerging from the mirror combination beam has a lift angle β relative to the bottom plate surface, it is necessary to correct the lift angle β so that, as shown in Figure 2 shown, the collimated beam group Ic can emerge parallel to the bottom plate surface; for the second function, as shown in Figure 4 shown, it is used to solve the problem of slow-axis tilt, so that each collimated beam with slow-axis tilt can be restored to a state where the slow axis is parallel to the bottom plate surface, thereby improving the beam combination density.

[0042] The focusing lens group 40 and the output optical fiber 50 are sequentially arranged behind the special-shaped prism. The collimated beam group Ic emerging from the special-shaped prism 30 is coupled to the output optical fiber 50 by the focusing lens group 40 to form a laser transmitted in the optical fiber.

[0043] As shown in Figure 5 shown, it is a three-dimensional structure schematic diagram of the special-shaped prism 30. The special-shaped prism 30 includes an incident surface S1 (the shaded surface facing the incident light) and an exit surface S2 (the surface opposite to S1); the function of solving the slow-axis tilt is described from a plane P1 parallel to the bottom plate surface (that is, observing the special-shaped prism 30 from the top view direction), and the function of correcting the lift angle β is described from a plane P2 perpendicular to the bottom plate surface and parallel to the optical axis (that is, observing the special-shaped prism 30 from the front view direction).

[0044] As shown in Figure 6 shown, in the plane P1, the incident surface S1 of the special-shaped prism 30 and the turning angle α satisfy ζ = 90 - α / 2 --- Equation [1]; as shown in Figure 7 shown, in the plane P2, the incident surface S1 of the special-shaped prism 30 and the lift angle β satisfy sin(90 + β / 2 - δ) = n * sin(90 - δ) ----- Equation [2]; where β is the lift angle, α is the turning angle, ζ is the angle between the incident surface S1 and the optical axis in the plane P1; δ is the angle between the incident surface S1 and the bottom plate surface in the plane P2, and n is the ratio of the refractive index of the special-shaped prism to the refractive index of the internal gas environment during the laser packaging.

[0045] When the incident surface S1 of the special-shaped prism 30 simultaneously satisfies the above relationships, when each collimated beam is incident on the incident surface S1, the incident surface S1 can simultaneously perform tilt compensation and lift correction, so that the slow axes of each collimated beam are corrected and simultaneously emerge parallel to the bottom plate surface, obtaining a densely arranged collimated beam group, and improving the quality of the laser beam transmitted in the output optical fiber after convergence.

[0046] Based on the above multi-bar semiconductor laser 1A, refer to Figure 8, for the multi-channel semiconductor laser 1B, relative to the multi-channel semiconductor laser 1A, two collimation optical path groups 10a and 10b are arranged side by side, and correspondingly, two mirror groups 20a and 20b are also provided. The two collimation optical path groups emit collimated light beams from the same height plane (assuming the bottom plate plane is horizontal). The collimated light beams are combined into two collimated light beam groups by the two mirror groups respectively. The first collimated light beam group enters the polarization beam combining prism 41 from the negative X direction after passing through the first special-shaped prism 30a, and the second collimated light beam enters the polarization beam combining prism 41 from the positive Y direction after turning through a certain angle again by the second special-shaped prism 30b.

[0047] Relative to the first special-shaped prism 30a, the second special-shaped prism 30b can also turn and emit the collimated light beam. Figure 9 The figure shows a schematic structural diagram of the second special-shaped prism 30b that also has a turning function. From the structural comparison with Figure 5 the shown special-shaped prism 30a, it can be seen that the exit surface S2 of the first special-shaped prism 30a is the surface opposite to the incident surface, and the exit surface S2 of the second special-shaped prism 30b is the surface adjacent to the incident surface. And in the second special-shaped prism 30b, a reflecting surface S3 is also provided.

[0048] In this embodiment, relative to the first special-shaped prism 30a, a mirror is required to cooperate ( Figure 8 the virtual mirror within the dotted box where 30b is located in the figure) to achieve the same turning effect. By setting a reflecting surface S3 on the idle surface of the second special-shaped prism 302, not only can the number of optical elements be reduced and the assembly and adjustment difficulty of the components be reduced, but also, compared with the scheme of setting a mirror behind the special-shaped prism, the optical path structure can be more compact, and the volume of the laser can be effectively reduced.

[0049] Specifically, in the second special-shaped prism 30b, when each collimated light beam is incident on the reflecting surface S3, as Figure 10 and Figure 11 shown, the reflecting surface S3 deflects the collimated light beam by -α or 180° - α and makes the collimated light beam exit perpendicularly to the exit surface S2.

[0050] On the basis of the above Multi-channel semiconductor laser 1B , See Figure 12, in the multi-tube semiconductor laser 1C, the surface of the bottom plate has stepped surfaces with different heights. Among them, the two collimation optical paths 10a and 10b are located on different stepped surfaces, and the laser diodes in each collimation optical path are located on the same horizontal plane. Therefore, the two collimation optical paths are located on different height planes to emit collimated light beams, and the two mirror groups are also located on different height planes to receive the collimated light beams; the corresponding two second special-shaped prisms 302 are also located on different height planes to respectively compensate and correct the incident collimated light beams, so that the two collimated light beam groups can be emitted from different height planes and finally be converged by the focusing lens group into the output optical fiber for emission. Since the two collimated light beam groups enter the focusing lens group from different height planes, compared with the multi-tube semiconductor laser 1B, it no longer sets the polarization beam combining prism 41, and there is no need to make the two collimated light beam groups enter the polarization beam combining prism 41 in mutually perpendicular directions; in the multi-tube semiconductor laser 1C provided in this embodiment, after each collimated light beam group exits from the mirror group and before entering the focusing lens group, only one second special-shaped prism needs to be set on its optical path, and there is no need to set components such as a rhombic prism and a mirror, which can effectively reduce the number of optical elements, reduce the assembly difficulty, and reduce the cumulative energy loss when the laser beam enters different dielectric surfaces.

[0051] The illustration in the above multi-tube semiconductor laser 1A shows the case where the mirror group 20 deflects the collimated light beam group by an angle of 90°. Each collimated light beam Ib1~Ibn is reflected and beam-combined by the mirror group after passing through the same optical path to form a closely arranged collimated light beam group. However, the optical path of the collimated light beam Ib1 from being reflected by the mirror 201 until entering the incident surface S1 of the special-shaped prism 30 is L1, and the optical path of the collimated light beam Ibn from being reflected by the mirror 20n until entering the incident surface S1 of the special-shaped prism 30 is Ln. The optical path difference between L1 and Ln is relatively large. Due to the characteristics of the laser, even the collimated light beam after being collimated by the fast and slow axis collimating mirrors will have a non-negligible divergence angle. When the light beams of the collimated light beams Ib1 and Ibn with a relatively large optical path difference enter the incident surface S1 of the special-shaped prism 30, the beam widths of the slow axes are quite different, which will result in the overall energy distribution shape of the closely arranged collimated light beam group being in the shape of Figure 3 a trapezoidal distribution as shown.

[0052] See Figure 13In the multi-tube semiconductor laser 1D, the reflector group 20 is arranged tilted so that the deflection angle of the collimated beam group is not 90°, but the collimated beams output according to the preset path can be closely arranged in the fast axis direction. In the multi-tube semiconductor laser 1D, the optical path of the collimated light beam Ib1 when incident on the reflector 201 is L11, and the optical path when incident on the incident surface S1 of the special-shaped prism 30 from the reflector 201 is L12. The optical path of the collimated light beam Ibn when incident on the reflector 20n is Ln1, and the optical path when incident on the incident surface S1 of the special-shaped prism 30 from the reflector 20n is Ln2. The optical path difference between (L11+L12) and (Ln1+Ln2) becomes smaller than the optical path difference between L1 and Ln. When the reflector group 20 deflects the collimated light beam group by an angle of 45°, the optical path difference between (L11+L12) and (Ln1+Ln2) can be completely eliminated, so that the energy distribution of the closely packed collimated light beam group is rectangular. Correspondingly, when the reflector group 20 causes the collimated light beam group to deflect at an angle other than 90°, it is necessary to formulate the incident surface parameters of the shaped prism 30 according to the above formulas [1] and [2] so that the steering angle of each collimated light beam can be corrected and the slow axis tilt can be compensated at the same time when it is incident on the incident surface S1 of the shaped prism 30.

[0053] It should be noted that the reflector group 20 is used to output a collimated light beam group densely packed on the fast axis. In practical applications, the reflector group can be composed of a plurality of small reflectors 201~20n arranged in an array, or it can be a reflector group 20 formed by a stepped reflector; each reflective surface of the reflector group 20 is arranged one-to-one corresponding to each collimated light beam.

[0054] The focusing lens group 40 is used to focus the closely packed collimated light beam group onto the output optical fiber 50. In some embodiments, the collimated light beam group needs to be filtered before focusing, so a filter (not shown) is provided to protect the optical path structure.

[0055] In summary, the multi-tube semiconductor laser described in the present invention is provided with a special-shaped prism, which can not only correct the slow axis tilt of the collimated light beam group caused by the reflector, but also make the collimated light beam group that is lifted relative to the bottom plate surface to be emitted parallel to the bottom plate surface, which can effectively solve the problem that the collimated light beam group cannot be closely packed due to the slow axis tilt. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

[0056] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A multi-tube semiconductor laser, characterized in that, Comprising: A collimating optical path group, including a plurality of collimating optical paths arranged at intervals on the surface of the bottom plate, and each collimating optical path emits a plurality of collimated light beams in the same direction; A mirror group, arranged corresponding to the collimating optical path group, turning each of the collimated light beams in a plane parallel to the surface of the bottom plate and lifting it relative to the surface of the bottom plate to form a collimated light beam group arranged at intervals in the fast axis direction; A special-shaped prism, compensating for the slow axis tilt of the collimated light beam group and simultaneously making the collimated light beam group emit parallel to the surface of the bottom plate.

2. The multi-tube semiconductor laser according to claim 1, characterized in that, The incident surface of the special-shaped prism satisfies the following formula [1] and formula [2]: ζ = 90° - α / 2 ------------------------------- Formula [1]; sin(90° + β - δ) = n * sin(90 - δ) ------------ Formula [2]; Wherein, α represents the turning angle of the collimated light beam by the mirror group in a plane parallel to the surface of the bottom plate; β represents the lifting angle of the collimated light beam by the mirror group relative to the surface of the bottom plate; ζ represents the included angle between the incident surface and the collimated light beam in a plane parallel to the surface of the bottom plate; δ represents the included angle between the incident surface and the surface of the bottom plate in a plane perpendicular to the surface of the bottom plate and parallel to the optical axis; n represents the ratio of the refractive index of the special-shaped prism to the refractive index of its surrounding environment.

3. The multi-channel semiconductor laser according to claim 2, wherein A reflecting surface is further arranged between the incident surface and the exit surface of the special-shaped prism. When each collimated light beam is incident on the reflecting surface, it deflects by -α in a plane parallel to the surface of the bottom plate.

4. The multi-channel semiconductor laser according to claim 2, wherein, A reflecting surface is further arranged between the incident surface and the exit surface of the special-shaped prism. When each collimated light beam is incident on the reflecting surface, it deflects by 180° - α in a plane parallel to the surface of the bottom plate.

5. The multi-channel semiconductor laser according to any one of claims 2-4, characterized in that, The mirror group turns each of the collimated light beams by 90° in a plane parallel to the surface of the bottom plate.

6. The multi-channel semiconductor laser according to any one of claims 2-4, characterized in that, The mirror group turns each of the collimated light beams by 45° in a plane parallel to the surface of the bottom plate.

7. The multi-channel semiconductor laser according to claim 1, wherein, The multi-bar semiconductor laser includes a plurality of collimating optical path groups, and the collimated light beams emitted by the plurality of collimating optical path groups are located in the same plane.

8. The multi-channel semiconductor laser according to claim 1, wherein The bottom plate adopts a stepped structure, and the surface of the bottom plate includes a plurality of stepped surfaces, and each collimating optical path group is respectively arranged on stepped surfaces at different heights.

9. The multi-channel semiconductor laser according to claim 1, characterized in that, The mirror group includes a plurality of mirrors arranged at intervals on the surface of the bottom plate, and each mirror is arranged corresponding to each collimating optical path.

10. The multi-tube semiconductor laser according to claim 1, wherein, The collimating optical path includes a laser diode, a fast axis collimating mirror and a slow axis collimating mirror; The laser emitted by the laser diode is subjected to fast axis collimation and slow axis collimation by the fast axis collimating mirror and the slow axis collimating mirror in sequence to form the collimated light beam.

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