Full-color display assembly and preparation method thereof

Abstract

The invention relates to a full-color display assembly and a preparation method thereof. The full-color display assembly comprises a driving backboard which comprises a plurality of first conductive polarity contacts and a second conductive polarity ring; the full-color vertical light-emitting array comprises vertical light-emitting chips with at least three different light-emitting wavelengths, a P-type electrode of each vertical light-emitting chip is electrically connected with one first conductive polarity contact, and an N-type semiconductor layer of each vertical light-emitting chip is connected with the second conductive polarity ring through a cover plate electrode; and the filling rubber material is filled in a space surrounded by the cover plate electrode and the driving back plate and is used for improving the strength of each vertical light-emitting chip in the vertical direction. By means of the technical scheme, full-color display with smaller size and higher density can be achieved, and meanwhile the reliability of the full-color display assembly can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor displays, and particularly to a full-color display component and a preparation method thereof. Background Art

[0002] Compared with other existing display technologies (LCD, PDP, OLED, etc.), Micro / Mini LED technology has the advantages of high brightness, high contrast, wide color gamut, large viewing angle, low power consumption, long lifespan, ultra-thin flexible display, etc., and is considered to be the ultimate technology for future displays.

[0003] Currently, Micro LED has broad application scenarios in the VR / AR field due to its small size, high contrast, high brightness, and independent addressability. Applying smaller-sized vertical Micro LEDs to the VR / AR field can provide a higher PPI. Taking the application of vertical Micro LEDs to the AR field as an example, the current mainstream application solutions are to directly align and bond monochromatic common-N vertical light-emitting chips to the driving backplane, and then directly package them as the display module of AR. However, since the monochromatic common-N vertical light-emitting chips can only achieve monochromatic light emission and cannot achieve full-color display, and at the same time, because the size of the vertical light-emitting chips aligned and bonded to the driving backplane is very small, the intensity in the vertical direction is weak, resulting in easy breakage during the alignment bonding process. Summary of the Invention

[0004] In view of the above deficiencies of the prior art, the purpose of the present application is to provide a full-color display component and a preparation method thereof, aiming to solve the problems that currently full-color AR display cannot be achieved and the intensity of vertical light-emitting chips in the vertical direction is weak.

[0005] The present application provides a full-color display component, including:

[0006] A driving backplane, including a plurality of first conductive polarity contacts and a second conductive polarity ring;

[0007] A full-color vertical light-emitting array, including vertical light-emitting chips having at least three different light-emitting wavelengths, the P-type electrode of each vertical light-emitting chip is electrically connected to one of the first conductive polarity contacts, and the N-type semiconductor layer of each vertical light-emitting chip is connected to the second conductive polarity ring through a cover electrode;

[0008] A filling adhesive material, filled in the space surrounded by the cover electrode and the driving backplane, for improving the intensity of each vertical light-emitting chip in the vertical direction.

[0009] The above full-color display component, on the one hand, realizes the full-color display of small-sized AR products by bonding vertical light-emitting chips with three different light-emitting wavelengths on the driving backplane; on the other hand, since a filling adhesive material is provided in the space surrounded by the cover plate electrode and the driving backplane, the filling adhesive material physically gives effective support to adjacent vertical light-emitting chips, so that their strength is improved without changing the volume and shape, thereby reducing or avoiding the breakage of vertical light-emitting chips during the alignment bonding process.

[0010] In one embodiment, it further includes:

[0011] Solder paste, provided between the P-type electrode and the first conductive polarity contact.

[0012] In one embodiment, the filling adhesive material includes any one of epoxy resin glue, photo-curing glue or spin-on glass.

[0013] In one embodiment, the cover plate electrode includes metal or metal oxide.

[0014] In one embodiment, the cover plate electrode is indium tin oxide.

[0015] In one embodiment, the cross-section of the cover plate electrode is C-shaped.

[0016] In one embodiment, the full-color vertical light-emitting array includes vertical light-emitting chips with three different light-emitting wavelengths of red, green and blue.

[0017] Based on the same inventive concept, the present application also provides a preparation method of a full-color display component, including:

[0018] Providing a driving backplane; wherein, the driving backplane includes a plurality of first conductive polarity contacts and a second conductive polarity ring;

[0019] Transferring vertical light-emitting chips with at least three light-emitting wavelengths to the driving backplane in batches and multiple times, wherein the P-type electrode of each vertical light-emitting chip is electrically connected to a first conductive polarity contact;

[0020] Fabricating a filling adhesive material between the vertical light-emitting chips;

[0021] Fabricating a cover plate electrode on the filling adhesive material to connect the N-type semiconductor layers of the vertical light-emitting chips to the second conductive polarity ring.

[0022] The preparation method of the above full-color display component realizes the full-color display of small-size AR products by bonding vertical light-emitting chips with three different light-emitting wavelengths on the driving backplane on the one hand. On the other hand, since a filling adhesive material is provided in the space surrounded by the cover plate electrode and the driving backplane, the filling adhesive material physically provides effective support for adjacent vertical light-emitting chips, so that their strength is improved without changing the volume and shape, thereby reducing or avoiding the breakage of vertical light-emitting chips during the alignment bonding process.

[0023] In one embodiment, the step of transferring vertical light-emitting chips with at least three light-emitting wavelengths to the driving backplane in batches and multiple times includes:

[0024] Providing a first substrate, a second substrate, and a third substrate; wherein, a plurality of vertical light-emitting chips with a first light-emitting wavelength are carried on the first substrate, a plurality of vertical light-emitting chips with a second light-emitting wavelength are carried on the second substrate, and a plurality of vertical light-emitting chips with a third light-emitting wavelength are carried on the third substrate;

[0025] Using a transfer stamp to transfer the vertical light-emitting chips on the first substrate, the second substrate, and the third substrate to the driving backplane respectively.

[0026] In one embodiment, the first light-emitting wavelength is between 600 nm and 650 nm, the second light-emitting wavelength is between 500 nm and 560 nm, and the third light-emitting wavelength is between 400 nm and 500 nm. Description of the Drawings

[0027] Figure 1 It is a schematic structural diagram of the full-color display component in an embodiment of the present application;

[0028] Figure 2 is Figure 1 a further schematic structural diagram of the full-color display component in

[0029] Figure 3 It is a flowchart of the preparation method of the full-color display component in an embodiment of the present application;

[0030] Figure 4 is Figure 3 a schematic diagram of the sub-step process of step S200 in

[0031] Figure 5 is related to Figure 4 a schematic diagram of the structural change corresponding to the method embodiment part;

[0032] Figure 6 is related to Figure 3 a schematic diagram of the structural change corresponding to steps S300 - S400 in the method embodiment.

[0033] Description of reference numerals:

[0034] 10-driving backplane; S1-first substrate; 102-first conductive polar contact; 104-second conductive polar ring; 202-vertical light-emitting chip of first light-emitting wavelength; 203-vertical light-emitting chip of second light-emitting wavelength; 204-vertical light-emitting chip of third light-emitting wavelength; 210-cover electrode; In-solder paste; 30-filling glue; L1-first temporary substrate; glue-receiving glue; SP-transfer stamp. DETAILED DESCRIPTION

[0035] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thoroughly and comprehensively understood.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0037] It should be understood that spatial relationship terms such as "under", "below", "below", "under", "above", "above", etc., can be used here to describe the relationship between an element or feature shown in the figures and other elements or features. It should be understood that in addition to the orientations shown in the figures, spatial relationship terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, the elements or features described as "under other elements" or "under" or "under" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" can include both upper and lower orientations. In addition, the device can also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0038] As used herein, the singular forms "a", "an" and "the" may also include the plural forms unless the context clearly dictates otherwise. It should also be understood that when the terms "comprising" and / or "including" are used in this specification, the presence of the stated features, integers, steps, operations, elements and / or components can be ascertained, but one or more other features, integers, steps, operations, elements, components and / or groups thereof are not precluded from being present or added. Also, as used herein, the term "and / or" includes any and all combinations of the associated listed items.

[0039] As used herein, the "deposition" process includes, but is not limited to, Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), or Atomic Layer Deposition (ALD).

[0040] Embodiments of the invention are described herein with reference to cross-sectional views that are schematic illustrations of ideal embodiments (and intermediate structures) of the invention, and such variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are to be expected. Thus, embodiments of the invention should not be construed as limited to the particular shapes of regions shown herein, but include shape deviations resulting from, for example, manufacturing techniques. For example, an implantation region shown as rectangular will typically have rounded or curved features at its edges and / or an implantation concentration gradient, rather than a binary change from the implanted region to the non-implanted region. Similarly, a buried region formed by implantation can result in some implantation in the region between the buried region and the surface through which the implantation occurs. Accordingly, the regions shown in the figures are substantially schematic, their shapes do not represent the actual shapes of regions of the device, and do not limit the scope of the invention.

[0041] As described in the background art of this application, Micro / Mini LED technology has the advantages of high brightness, high contrast, wide color gamut, large viewing angle, low power consumption, long lifespan, ultra-thin flexible display, etc. compared with other existing display technologies (LCD, PDP, OLED, etc.), and is considered to be the ultimate technology for future displays.

[0042] Currently, Micro LEDs have broad application scenarios in the VR / AR field due to their advantages such as small size, high contrast, high brightness, and independent addressability. Applying smaller-sized vertical Micro LEDs to the VR / AR field can provide a higher PPI. Taking the application of vertical Micro LEDs to the AR field as an example, the current mainstream application solutions are to directly align and bond monochromatic vertical light-emitting chips with a total of N to the driving backplane, and then directly package them as the display module of the AR. However, since the monochromatic vertical light-emitting chips with a total of N can only achieve monochromatic light emission and cannot achieve full-color display, at the same time, because the size of the vertical light-emitting chips aligned and bonded to the driving backplane is very small, the intensity in the vertical direction is weak, resulting in easy breakage during the alignment bonding process.

[0043] Based on this, this application hopes to provide a solution that can solve the above technical problems, and its detailed content will be elaborated in the subsequent embodiments.

[0044] Reference may also be made to Figure 1 and 2 This application provides a full-color display component that may include: a driving backplane 10, a full-color vertical light-emitting array (not shown in the figure), a cover plate electrode 210, and a filling adhesive material 30. Among them, the driving backplane 10 includes a plurality of first conductive electrode contacts 102 and a second conductive electrode ring 104. The full-color vertical light-emitting array includes vertical light-emitting chips with at least three different light-emitting wavelengths, which can be respectively denoted as the vertical light-emitting chip 202 with the first light-emitting wavelength, the vertical light-emitting chip 203 with the second light-emitting wavelength, and the vertical light-emitting chip 204 with the third light-emitting wavelength; wherein, the P-type electrode (not shown in the figure) of each of the vertical light-emitting chips is electrically connected to one of the first conductive electrode contacts 102, and the N-type semiconductor layer (not shown in the figure) of each of the vertical light-emitting chips is connected to the second conductive electrode ring 104 through a cover plate electrode 210. That is to say, all the N-type semiconductor layers in the full-color vertical light-emitting array of this application are connected together through the cover plate electrode 210 to form a common-N structure.

[0045] The filling adhesive material 30 is filled in the space surrounded by the cover plate electrode 210 and the driving backplane 10, and is used to improve the intensity of each of the vertical light-emitting chips in the vertical direction.

[0046] On the one hand, the above-mentioned full-color display component realizes full-color display of small-sized AR products by bonding vertical light-emitting chips with three different light-emitting wavelengths on the driving backplane 10. On the other hand, since the filling adhesive material 30 is provided in the space surrounded by the cover plate electrode 210 and the driving backplane 10, the filling adhesive material 30 physically gives effective support to adjacent vertical light-emitting chips, so that their strength is improved without changing the volume and shape, thereby reducing or avoiding the situation that the vertical light-emitting chips are broken during the alignment bonding process.

[0047] Such as Figure 2As shown, it is a schematic structural diagram of the full-color vertical light-emitting array of the present application. As shown in the figure, the full-color vertical light-emitting array may include a plurality of vertical light-emitting chips 202 with a first emission wavelength, vertical light-emitting chips 203 with a second emission wavelength, and vertical light-emitting chips 204 with a third emission wavelength. In this specific embodiment, the vertical light-emitting chips 202 with a first emission wavelength, vertical light-emitting chips 203 with a second emission wavelength, and vertical light-emitting chips 204 with a third emission wavelength may be LEDs, specifically Mini LEDs or Micro LEDs. Additionally, the vertical light-emitting chip 202 with a first emission wavelength may be a red LED, and the vertical light-emitting chips 203 with a second emission wavelength and 204 with a third emission wavelength may be a green LED and a blue LED respectively. The vertical light-emitting chip 202 with a first emission wavelength may be a red LED, and both the vertical light-emitting chips 203 with a second emission wavelength and 204 with a third emission wavelength may simultaneously include an N-type semiconductor layer (not shown in the figure), an active layer (not shown in the figure), and a P-type semiconductor layer (not shown in the figure). According to their different emission wavelengths, the materials that can be selected as the N-type semiconductor layer or the P-type semiconductor layer may be group III-V compound semiconductor materials such as GaN, AlGaN, InGaN, AlInP, GaInP, AlGaInP, etc. Additionally, the structure of the selectable active layer may be a single hetero structure (SH), a double hetero structure (DH), a double-side double hetero structure (DDH), or a multi-quantum well structure (MQW), or any one of quantum dots (Quantum Well). Exemplarily, in this specific embodiment, the active layer is a multiple quantum well structure (MQW). Specifically, the quantum wells or quantum layers of the multiple quantum well structure may be InGaN, AlGaN, InN, InAlN, AlInGaN, etc., and the quantum barriers alternately stacked with the quantum well layers may be GaN, AlN, AlGaN, AlInGaN, InAlN, etc.; the multiple quantum well structure may include one or two or three or four or five or six or six or seven or eight quantum wells (or at least one quantum hole).

[0048] Further, the cover plate electrode of the present application may include a metal or a metal oxide; wherein, the metal may be an alloy or a pure metal, for example, it may be formed by a combination of one or more of Cr, Pt, Ti, Ni, Au, Sn, Ag, Cu, Cu, Al. The metal oxide may include but is not limited to indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), zinc oxide (ZnO), indium zinc oxide (IZO), diamond-like carbon film (DLC) or gallium zinc oxide (GZO). Exemplarily, the cover plate electrode 210 of the present application is indium tin oxide, and the cover plate electrode 210 has a C-shaped cross-section.

[0049] In one embodiment, the filling adhesive 30 may include any one of epoxy resin adhesive, photo-curable adhesive or spin-on glass. It can be understood that when selecting the specific filling adhesive 30, an adhesive with less influence or no influence by laser and low resistance should be selected. Exemplarily, an ultraviolet light-curable adhesive can be selected.

[0050] In one embodiment, as Figure 2 shown, the display component may further include: solder paste In, disposed between the P-type electrode and the first conductive electrode contact 102. The solder paste In may be indium or tin.

[0051] Based on the same inventive concept, refer to Figure 3 , the present application further provides a preparation method of a full-color display component, including steps S100-S400;

[0052] Step S100, providing a driving backplane; wherein, the driving backplane includes a plurality of first conductive electrode contacts and a second conductive electrode ring;

[0053] Step S200, transferring at least three vertical light-emitting chips with different light-emitting wavelengths to the driving backplane in batches and multiple times, wherein the P-type electrode of each vertical light-emitting chip is electrically connected to a first conductive electrode contact;

[0054] Step S300, making a filling adhesive between the vertical light-emitting chips;

[0055] Step S400, making a cover plate electrode on the filling adhesive to connect the N-type semiconductor layer of each vertical light-emitting chip to the second conductive electrode ring.

[0056] The preparation method of the above full-color display component, on the one hand, realizes the full-color display of small-size AR products by bonding vertical light-emitting chips with three different light-emitting wavelengths on the driving backplane; on the other hand, since a filling adhesive material is provided in the space surrounded by the cover plate electrode and the driving backplane, the filling adhesive material physically provides effective support for adjacent vertical light-emitting chips, so that their strength is improved without changing the volume and shape, thereby reducing or avoiding the breakage of vertical light-emitting chips during the alignment bonding process.

[0057] In one embodiment, reference may be made to Figure 4 、 Figure 5 and Figure 6 , the step S200 of transferring vertical light-emitting chips with at least three light-emitting wavelengths to the driving backplane in batches and multiple times may include sub-steps S210-S220.

[0058] Step S210, providing a first substrate, a second substrate and a third substrate; wherein, a plurality of vertical light-emitting chips with a first light-emitting wavelength are carried on the first substrate, a plurality of vertical light-emitting chips with a second light-emitting wavelength are carried on the second substrate, and a plurality of vertical light-emitting chips with a third light-emitting wavelength are carried on the third substrate;

[0059] Step S220, using a transfer stamp to transfer the vertical light-emitting chips on the first substrate, the second substrate and the third substrate to the driving backplane respectively.

[0060] As Figure 5 shown, it is a transfer schematic diagram of the vertical light-emitting chip 202 with the first light-emitting wavelength. As shown in the figure, a plurality of vertical light-emitting chips 202 with the first light-emitting wavelength are fabricated on the first substrate S1. Subsequently, these vertical light-emitting chips 202 with the first light-emitting wavelength can be transferred to the first temporary substrate L1, and a receiving adhesive material glue is provided on the first temporary substrate L1. In this specific embodiment, the first substrate S1 is mainly a growth substrate, and the growth substrate can be a transparent substrate, and the material of the transparent substrate includes inorganic materials or III-V semiconductor materials. The inorganic materials include silicon carbide (SiC), germanium (Ge), sapphire (Sapphire), lithium aluminate (LiAlO2), zinc oxide (ZnO), glass or quartz. The III-V semiconductor materials include indium phosphide (InP), gallium phosphide (GaP), gallium nitride (GaN), aluminum nitride (AlN) materials. At the same time, the growth substrate should have sufficient strength to mechanically support the epitaxial layer, and it can also have the property of transmitting the light emitted through the epitaxial layer. In addition, the thickness of the growth substrate can be selected to be more than 50 μm. In addition, in order to facilitate the possible subsequent bonding process to machine (thin) the growth substrate, the selected thickness of the growth substrate generally does not exceed 300 μm.

[0061] In addition, the first temporary substrate L1 may also include an inorganic material or a group III-V semiconductor material. The inorganic materials include silicon carbide (SiC), germanium (Ge), sapphire, lithium aluminate (LiAlO2), zinc oxide (ZnO), glass or quartz. The group III-V semiconductor materials include indium phosphide (InP), gallium nitride (GaN), aluminum nitride (AlN) materials. This application does not make further limitations.

[0062] Subsequently, a transfer stamp SP can be used to selectively pick up the vertical light-emitting chip 202 with the first emission wavelength on the first temporary substrate L1. Among them, the transfer stamp SP can be made of PDMS (Polydimethylsiloxane). Subsequently, the transfer stamp SP transfers the picked-up vertical light-emitting chip 202 with the first emission wavelength to the driving backplane 10. Repeat this process to complete the transfer of the vertical light-emitting chip 203 with the second emission wavelength and the vertical light-emitting chip 204 with the third emission wavelength, obtaining the structure shown in the first sub-drawing in Figure 6 Then, the transfer stamp SP is removed, and a filling adhesive 30 is spin-coated between adjacent vertical light-emitting chips. Among them, the filling adhesive 30 exposes the N-type semiconductor layers of the vertical light-emitting chip 202 with the first emission wavelength, the vertical light-emitting chip 203 with the second emission wavelength, and the vertical light-emitting chip 204 with the third emission wavelength, as well as the second conductive electrode ring 104 on the driving backplane 10. Finally, a cover electrode 210 can be fabricated by evaporation or sputtering and other processes according to the specific material selection on this basis. In this way, the preparation of the full-color display component is completed.

[0063] In one embodiment, the first emission wavelength is between 600 nm and 650 nm, the second emission wavelength is between 500 nm and 560 nm, and the third emission wavelength is between 400 nm and 500 nm. That is, the first emission wavelength of this application is red light, the second emission wavelength is green light, and the third emission wavelength is blue light.

[0064] It should be understood that the application of the present invention is not limited to the above examples. For those of ordinary skill in the art, improvements or transformations can be made according to the above description. All such improvements and transformations should fall within the protection scope of the appended claims of the present invention.

Claims

1. A full-color display component, characterized in that, Comprising: A driving backplane, including a plurality of first conductive polarity contacts and a second conductive polarity ring; A full-color vertical light-emitting array, including vertical light-emitting chips with at least three different light-emitting wavelengths, the P-type electrode of each said vertical light-emitting chip being electrically connected to one of said first conductive polarity contacts, and the N-type semiconductor layer of each said vertical light-emitting chip being connected to said second conductive polarity ring through a cover plate electrode; A filling adhesive material, filled in the space enclosed by the cover plate electrode and the driving backplane, for enhancing the intensity of each said vertical light-emitting chip in the vertical direction.

2. The full-color display component according to claim 1, characterized in that, Further comprising: Solder paste, disposed between the P-type electrode and the first conductive polarity contact.

3. The full-color display component according to claim 1, wherein The filling adhesive material includes any one of epoxy resin glue, photo-curing glue or spin-on glass.

4. The full-color display component according to claim 1, wherein The cover plate electrode includes metal or metal oxide.

5. The full-color display component according to claim 4, characterized in that, The cover plate electrode is indium tin oxide.

6. The full-color display component according to claim 1, wherein The cross-section of the cover plate electrode is C-shaped.

7. The full-color display component according to any one of claims 1-6, characterized in that, The full-color vertical light-emitting array includes vertical light-emitting chips with three different light-emitting wavelengths of red, green and blue.

8. A method for preparing a full-color display component, characterized in that, Comprising: Providing a driving backplane; wherein, the driving backplane includes a plurality of first conductive polarity contacts and a second conductive polarity ring; Transferring vertical light-emitting chips with at least three light-emitting wavelengths to the driving backplane in batches and multiple times, wherein the P-type electrode of each said vertical light-emitting chip is electrically connected to one of said first conductive polarity contacts; Fabricating a filling adhesive material between each said vertical light-emitting chips; Fabricating a cover plate electrode on the filling adhesive material to connect the N-type semiconductor layer of each said vertical light-emitting chip to the second conductive polarity ring.

9. The preparation method of the full-color display component according to claim 8, wherein, The step of transferring vertical light-emitting chips with at least three light-emitting wavelengths to the driving backplane in batches and multiple times includes: Providing a first substrate, a second substrate and a third substrate; wherein, a plurality of vertical light-emitting chips with a first light-emitting wavelength are carried on the first substrate, a plurality of vertical light-emitting chips with a second light-emitting wavelength are carried on the second substrate, and a plurality of vertical light-emitting chips with a third light-emitting wavelength are carried on the third substrate; Using a transfer stamp to transfer the vertical light-emitting chips on the first substrate, the second substrate and the third substrate to the driving backplane respectively.

10. The method for preparing a full-color display component according to claim 9, characterized in that, The first light-emitting wavelength is between 600nm and 650nm, the second light-emitting wavelength is between 500nm and 560nm, and the third light-emitting wavelength is between 400nm and 500nm.

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