System and method for measuring three-dimensional information of double-light-source substrate image

Abstract

The invention discloses a double-light-source substrate image three-dimensional information measuring system and method. The double-light-source substrate image three-dimensional information measuring system comprises an exciting light generating device, a white light generating device, an image capturing device and an image measuring device. The exciting light generating device is used for providing exciting light to a substrate in a fluorescence mode, so that the substrate generates fluorescence. The white light generating device is used for providing white light to the substrate in a white light mode. The image capturing device is used for capturing an image of the substrate in a fluorescence mode to obtain a fluorescence image, and / or capturing an image of the substrate in a white light mode to obtain a white light image. The image measuring device is connected or coupled with the image capturing device, and is used for establishing substrate measuring information according to the fluorescence image and / or the white light image and generating three-dimensional line information. According to the invention, three-dimensional detection / measurement is carried out on the substrate through the fluorescence image and / or the white light image, detection / measurement application can be carried out on the substrate through the fluorescence image, and relatively accurate line measurement quality is obtained.

Description

Technical Field

[0001] The present invention relates to a substrate image measurement system and method, and particularly to a dual-light-source substrate image three-dimensional information measurement system and method. Background Art

[0002] Compared with the white-light inspection / measurement method, the fluorescence inspection / measurement method has the advantage of high sensitivity and can detect / measure very fine features, which may be ignored in other types of image detection methods.

[0003] The fluorescence measurement of a circuit board is to irradiate an excitation light on a substrate, and due to the response of the organic substances on the substrate to the excitation light, the substrate emits fluorescence. Since the metal lines do not respond to the excitation light and thus do not emit fluorescence, boundaries are generated between the metal lines and the substrate in the image. The fluorescence measurement is to perform the measurement operation of the metal lines through the boundary differences in the image.

[0004] However, for circuit substrates of specific materials, such as glass substrates and steel substrates, if they do not have organic substances that can respond to the excitation light, boundary differences cannot be generated in the image, and thus the fluorescence cannot be used for the measurement operation.

[0005] In addition, when performing three-dimensional detection on circuits conventionally, mainly confocal microscopy, triangulation reflection technology, white-light interference technology, etc. are used, and three-dimensional models are established by means of point measurement. Not only is the measurement time too slow and it is difficult to perform a large number of detections, but also due to the limitation of point measurement, only local height information can be obtained, and it is difficult to combine it into complete cross-sectional area information of the circuit. Summary of the Invention

[0006] The main object of the present invention is to provide a dual-light-source substrate image three-dimensional information measurement system, including an excitation light generating device, a white light generating device, an image capturing device, and an image measuring device. The excitation light generating device is used to provide an excitation light to a substrate in a fluorescence mode to cause the substrate to emit fluorescence. The white light generating device is used to provide a white light to the substrate in a white light mode. The image capturing device is used to capture an image of the substrate in the fluorescence mode to obtain a fluorescence image, and / or capture an image of the substrate in the white light mode to obtain a white light image. The image measuring device is connected or coupled to the image capturing device, and establishes a substrate measurement information and generates a three-dimensional circuit information according to the fluorescence image and / or the white light image.

[0007] Another object of the present invention is to provide a three-dimensional measurement method for a substrate image with dual light sources, including: providing an excitation light to a substrate in a fluorescence mode to cause the substrate to generate fluorescence; providing a white light to the substrate in a white light mode; capturing an image of the substrate in the fluorescence mode to obtain a fluorescence image, and / or capturing an image of the substrate in the white light mode to obtain a white light image; and establishing a substrate measurement information and generating a three-dimensional circuit information based on the fluorescence image and / or the white light image.

[0008] Therefore, the present invention performs three-dimensional inspection / measurement on the substrate through the fluorescence image and / or the white light image. It can perform inspection / measurement applications on the substrate through the fluorescence image to obtain relatively accurate circuit measurement quality. It also performs corresponding inspection / measurement operations on the circuit board that cannot be inspected / measured by fluorescence through the white light image, so as to achieve accurate three-dimensional inspection / measurement through the mutual complementarity of fluorescence inspection / measurement and / or white light inspection / measurement. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a block diagram (one) of the three-dimensional information measurement system for the image in the present invention.

[0010] Figure 2 It is a block diagram (two) of the three-dimensional information measurement system for the image in the present invention.

[0011] Figure 3 3A - 3D in it are schematic diagrams (one) - (four) of the configuration of the image capture device in the present invention.

[0012] Figure 4 It is a schematic diagram of the distribution of the control points / measurement points of the substrate image.

[0013] Figure 5 (a) to (f) in it are schematic diagrams of the appearances of different circuit types in the present invention.

[0014] Figure 6 It is a top view schematic diagram (one) of an embodiment of a general circuit.

[0015] Figure 7 It is a side view schematic diagram of an embodiment of a general circuit.

[0016] Figure 8 It is a top view schematic diagram of an embodiment of a circuit turn.

[0017] Figure 9 It is a top view schematic diagram of an embodiment of a circular pad area in the present invention.

[0018] Figure 10 It is a top view schematic diagram of an embodiment of a metal ring.

[0019] Figure 11 It is a top view schematic diagram of an embodiment of a round hole on the substrate.

[0020] Figure 12 It is a schematic diagram of the line cross-section.

[0021] Figure 13 It is a top view schematic diagram (II) of an embodiment of a general line.

[0022] Figure 14 It is an information diagram of abnormal line distribution in the present invention.

[0023] Figure 15 It is an information diagram of substrate measurement in the present invention.

[0024] Figure 16 It is a diagram of abnormal distribution of substrate sub-regions in the present invention.

[0025] Figure 17 It is an information diagram of line accuracy distribution in the present invention.

[0026] Figure 18 (a) and (b) in it are schematic diagrams of a cross-comparison image of a fluorescence image and a white light image in the present invention.

[0027] Figure 19 It is a schematic flow diagram of a method for measuring three-dimensional information of an image in the present invention.

[0028] Figure 20 (a), (b) and (c) in it are schematic flow diagrams of a method for analyzing substrate defects in the present invention.

[0029] The markings in the figure are as follows:

[0030] 100 Three-dimensional information measurement system for images

[0031] W Substrate

[0032] BD1 Line

[0033] US Upper surface

[0034] SW Side wall

[0035] BD2 Organic layer

[0036] 10 Excitation light generating device

[0037] Ld1 Excitation light

[0038] J1 Diffused fluorescence

[0039] A Region to be measured

[0040] 20 White light generating device

[0041] 30 Image capture device

[0042] 31 First image capture device

[0043] A1 Arrow

[0044] 32 Second Image Capturing Device

[0045] A2 Arrow

[0046] FL1 Switchable Filter

[0047] 33 Mobile Device

[0048] 34 Image Capturing Device

[0049] 40 Image Measuring Device

[0050] 41 Image Processing Module

[0051] 42 Contour Analysis Module

[0052] 43 Measuring Module

[0053] 44 Substrate Information Visualization Module

[0054] 45 Process Capability Evaluation Module

[0055] 50 Human-Machine Interface

[0056] 51 Host Computer

[0057] 52 Monitor

[0058] 53 Input Device

[0059] 60 Defect Analysis Device

[0060] AR Sub-region

[0061] Y1 Control Point / Measuring Point

[0062] W1 Upper Width of the Line

[0063] W2 Lower Width of the Line

[0064] S1 First Top-View Side Wall Width

[0065] S2 Second Top-View Side Wall Width

[0066] LR Line Length

[0067] W3 Side-View Side Wall Width

[0068] H Line Thickness

[0069] S3 Top-View Side Wall Width

[0070] θ Shooting Angle

[0071] Ar Arc

[0072] AD Arc Center

[0073] R distance

[0074] R1 distance

[0075] R2 distance

[0076] Center of MD

[0077] Outer edge boundary of B1 metal ring

[0078] Inner edge boundary of B2 metal ring

[0079] Center of MD1

[0080] Center of MD2

[0081] DT distance

[0082] Bottom surface characteristic area H1

[0083] Defect area H2

[0084] Wall characteristic area H3

[0085] Top surface characteristic area H4

[0086] Width L1

[0087] Width L2

[0088] Length L4

[0089] Width L5

[0090] Abnormal distribution information diagram of I1 circuit

[0091] Upper area K1

[0092] Lower area K2

[0093] Substrate measurement information diagram of I2

[0094] Abnormal distribution diagram of I3 substrate sub - area

[0095] Line width defect F1

[0096] Arc defect F2

[0097] Concentricity defect F3

[0098] Circuit accuracy distribution information diagram of I4

[0099] Sub - area Sb1

[0100] Characteristic impedance line Rd1

[0101] Fluorescent image FI

[0102] Circuit L

[0103] D defect

[0104] WI white light image

[0105] L’ circuit

[0106] D’ defect Detailed implementation manners

[0107] Regarding the detailed description and technical content of the present invention, it will be described below in conjunction with the accompanying drawings. For the convenience of description, the scale of the drawings in the present invention is not necessarily drawn according to the actual scale and there is an exaggerated situation. These drawings and their scales are not used to limit the scope of the present invention.

[0108] All the materials and data described in the present invention can be stored in any non-transitory storage device, for example, stored on a local server device or a cloud server device, which is not limited in the present invention; or all the materials and data can be stored in the storage device of an individual device or in the database of a central control system, which is also not limited in the present invention.

[0109] The “module” described in the present invention and its corresponding functions can be loaded into the storage device by a single chip or a combination of multiple chips and then executed collaboratively. The number of these chip configurations is not within the scope intended to be limited by the present invention. In addition, the chips can be, but are not limited to, a combination of devices such as a processor, a central processing unit (CPU), a microprocessor, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a programmable logic device (PLD), etc., which is not limited in the present invention. The “storage device” described in the present invention can be, but is not limited to, a combination of devices such as a cache memory, a dynamic random access memory (DRAM), a persistent memory, etc. that can be used for storing and retrieving data, which is not limited in the present invention.

[0110] The "substrate" described in the present invention may include, for example, but is not limited to, a printed circuit board (PCB), a flexible printed circuit (FPC), a ceramic substrate, a multilayer circuit board, or an integrated circuit board such as a wafer or chip, which is not limited in the present invention. The "circuit" described in the present invention may include, for example, but is not limited to, a metal circuit or an etched circuit on the substrate, which is not limited in the present invention. The substrate in the present invention may be a single board including only a set of circuit features or a composite board composed of multiple substrate sub-regions, and these embodiments are not limited in the present invention. In the embodiment of the composite board, the shape and size of each substrate sub-region may be the same or different. Generally, in a large number of processes, multiple substrate sub-regions are usually integrated on a single board, and the substrate sub-regions are cut in the backend process to obtain multiple independent substrate modules.

[0111] Please first refer to the following Figure 1 , the three-dimensional image information measurement system 100 of the present invention selectively provides excitation light and / or white light to a substrate W, and measures the circuit on the substrate W by capturing and processing the fluorescence image and / or white light image of the substrate W, so as to establish substrate measurement information. The three-dimensional image information measurement system 100 mainly includes an excitation light generation device 10, a white light generation device 20, an image capture device 30, an image measurement device 40, and a human-machine operation interface 50.

[0112] The excitation light generation device 10 is used to provide excitation light to the substrate W in the fluorescence mode, so that the substrate W generates fluorescence, and the circuit contour of the substrate W is highlighted by the fluorescence. The white light generation device 20 is used to provide white light to the substrate W in the white light mode. The image capture device 30 is used to capture the image of the substrate W in the fluorescence mode to obtain a fluorescence image and / or capture the image of the substrate W in the white light mode to obtain a white light image. The image measurement device 40 is connected or coupled to the image capture device 30, establishes a substrate measurement information according to the fluorescence image and / or white light image, and generates a three-dimensional circuit information according to the substrate measurement information.

[0113] The human-machine operation interface 50 is used to display the fluorescence image, white light image, three-dimensional circuit image of the substrate W, as well as the measurement information or detection information of the substrate for personnel reference. In one embodiment, the human-machine operation interface 50 includes a computing device, and the computing device includes a main unit 51, a display 52 connected to the main unit 51, and an input device 53 (such as a mouse, keyboard, etc.) connected to the main unit 51 for personnel to operate. In addition to allowing personnel to perform visual inspection, the human-machine operation interface 50 also allows personnel to perform appropriate operations, such as generating a reference image or a quantification chart based on the fluorescence image, white light image, and / or three-dimensional circuit image, and using the reference image or quantification chart to correct and compensate various variables of the substrate process. In one embodiment, the human-machine operation interface 50 can be replaced by an external device connected to the network (such as the Internet) or a network (such as peer-to-peer). These external devices can include, for example, but are not limited to, computers, laptop computers, mobile devices, servers, or network-attached storage devices (NAS), etc. The variations of these embodiments are not limited in the present invention.

[0114] Please also refer to the following Figure 2 , and the principle of the excitation light generation device will be described below in conjunction with the accompanying drawings. The excitation light generated by the excitation light generation device 10 is mainly used to excite the organic matter or fluorescent labeling substance on the substrate W, so that the irradiated area generates fluorescence. Generally speaking, the metal material on the substrate will not generate fluorescence. As Figure 2 shown, the excitation light generation device 10 provides the excitation light Ld1 to irradiate the peripheral area adjacent to the circuit BD1 on the substrate W, so that the organic matter (such as the organic layer BD2) or fluorescent labeling substance on the peripheral surface of the circuit is excited to further generate diffuse fluorescence J1, so that a brightness difference is generated between the peripheral area of the circuit BD1 and the circuit BD1 itself to generate a circuit contour. Since the diffuse fluorescence is generated from the relatively low-potential area on the peripheral surface of the circuit, the diffuse light irradiates one side wall SW of the circuit BD1, so that a brightness difference is generated between the side wall SW and an upper surface US of the circuit BD1, further highlighting the contours of the side wall SW and the upper surface US of the circuit BD1. Through these contours, the region of interest can be segmented from the fluorescence image and detected / measured. In one embodiment, the excitation light provided by the excitation light generation device 10 can include, for example, but is not limited to, ultraviolet light, X-ray, or any other specific light source that can excite organic matter or fluorescent labeling substance to generate fluorescence, and is not limited in the present invention.

[0115] In one embodiment, a substrate W is disposed on a region A to be measured, so that the substrate W is leveled or fixed on a table. It should be noted that the region A to be measured is not necessarily a horizontal region. According to the moving line position of the device, the shooting direction of the camera, and the requirements of detection, the surface of the region A to be measured can also be in any direction (for example, adsorbed by vacuum or fixed at any angle or even inverted by a jig). In one embodiment, the region A to be measured includes but is not limited to a fixed stage or a movable stage. The fixed stage is, for example, but not limited to a flat stage, a vacuum adsorption stage, an air-floating stage, etc. The movable stage can be, for example, but not limited to a linear stage, a track device, a movable vacuum adsorption stage, a movable air-floating stage, etc.

[0116] In one embodiment, as Figure 3 shown in FIGS. 3A to 3D, the image capturing device 30 includes a first image capturing device 31 and a second image capturing device 32, which are respectively used to obtain a top view image and a side view image of the substrate W. In this embodiment, the first image capturing device 31 is disposed on the front surface of the substrate W, and its optical axis direction (arrow A1) is orthogonal to the surface of the substrate W, so as to obtain a front view image of the substrate W; the second image capturing device 32 is disposed on the side surface of the substrate W, and its optical axis direction (arrow A2) forms a shooting angle θ with the surface of the substrate W, so as to obtain a side view image of the substrate W to be measured. In one embodiment, the shooting angle θ can be between 0 degrees and 90 degrees, and the changes of these angles are not limited in the present invention.

[0117] In the above configuration, in one embodiment, as Figure 3 shown in FIG. 3A, in the group of the first image capturing device 31 and the second image capturing device 32, one of the image capturing devices can be used as a camera for shooting a white light image, and the other image capturing device can be used as a camera for shooting a fluorescence image; in another embodiment, as Figure 3 shown in FIG. 3B, in the group of the first image capturing device 31 and the second image capturing device 32, any one or all of the image capturing devices can be configured with a switchable filter FL1. By switching the type of the filter, the image capturing device can shoot a white light image or a fluorescence image of the substrate in the white light mode or the fluorescence mode. In the white light mode, the image capturing device can switch the filter to a transparent wave plate, an RGB wave plate or no filter. In the fluorescence mode, the image capturing device can switch the filter to a fluorescence filter that only allows fluorescence to pass through. The fluorescence filter filters out the reflected excitation light and other ambient light, and allows the fluorescence to pass through, so as to eliminate the noise in the fluorescence image; in another embodiment, as Figure 3As shown in 3C, in the group of the first image capturing device 31 and the second image capturing device 32, at least one moving device 33 (such as a robotic arm, a linear stage, etc.) is provided for one or all of the image capturing devices, so that the image capturing device moves between two positions in the front direction or the side direction of the substrate W to switch the shooting angle of the image capturing device; in one embodiment, in the group of the first image capturing device 31 and the second image capturing device 32, the front image and the side image of the substrate can be captured through the permutation and combination of the above embodiments; in one embodiment, as Figure 3 As shown in 3D, in an embodiment including only a single image capturing device 34, the image capturing device is moved by the moving device 33 and moves between two positions in the front direction or the side direction, and a white light image or a fluorescence image is captured through the switchable filter FL1. These embodiments are not limited in the present invention.

[0118] In one embodiment, the image measuring device 40 includes an image processing module 41, a contour analysis module 42, a measuring module 43, a substrate information visualization module 44, and a process capability evaluation module 45. The image measuring device 40 loads the storage device through the processor and executes the corresponding image processing module 41 to perform the image processing function. The image processing module includes, for example, but is not limited to, an image pre-processing program, image segmentation and positioning, defect detection (gradientation, region growing, growth compensation, etc.), a machine learning system, a deep learning system, etc. Further, in one embodiment, the image processing module 41 can perform an image pre-processing program (such as image enhancement, noise removal, contrast enhancement, edge enhancement, feature capture, image compression, image conversion, etc.), and segment or capture the boundary of the image after the image pre-processing program to divide the region of interest (ROI). The capturing method of the region of interest includes, for example, but is not limited to, binarization processing or separating the image features of different regions from the image through a neural network (such as Mask RCNN, etc.), and this is not limited in the present invention.

[0119] The contour analysis module 42 generates line contour information based on the fluorescence image and / or the white light image, and establishes substrate measurement information based on the line contour information. In one embodiment, the region of interest can be segmented by means of binary processing through the light and dark difference, and then the line contour information is generated. The generation of the light and dark difference can be achieved, for example, by providing light sources with different directivities or by the autofluorescence effect of the substrate; in other embodiments, the line contour information can also be actively generated by a neural network. These embodiments are not limited in the present invention. In one embodiment, the "substrate measurement information" can include, for example, but is not limited to, information such as line width, line pitch, aperture, polygon perimeter, radian, roundness, or concentricity. The measurement module 43 obtains the actual distances in the real space (such as length, width, etc.) through pixel conversion, and further obtains other substrate measurement information based on these parameters.

[0120] In one embodiment, the image measuring device 40 generates a plurality of measurement point information corresponding to the substrate W based on the fluorescence image or the white light image. Specifically, the image measuring device 40 can perform a large number of high-precision measurements on the surface of the substrate W by establishing a plurality of control points in the image. The present invention uses a large number of control point measurements to improve the overall accuracy and details of the measurement. Specifically, for example, a plurality of sampling control points can be set for the object to be measured for measurement, a large number of control points or measurement points can be set, or all measurement points can be set (for all measurement points of the object to be measured, such as the point cloud for constructing a three-dimensional image). The above-mentioned control points refer to several reference points selected on the substrate before the measurement work, and the coordinate positions of the reference points are determined by a precision measuring instrument; the measurement points are control points with arbitrary measurement data attached.

[0121] Specifically, taking one embodiment as an example Figure 4 , the captured substrate image (white light image or fluorescence image) is divided into a plurality of sub-regions AR (such as 2 to the power of N, which is 64 in the figure), and the center of gravity of each sub-region AR is defined as a control point / measurement point Y1 for sampling measurement. In other embodiments, the number of samples can also be determined according to odd or even sub-regions AR or other methods; the control point measurement of the sub-region AR can also be randomly performed according to a percentage of the number of sub-regions AR (for example, 70%). The principle of a large number of control points and sampling measurement is just that the number of sub-regions AR is larger and the measurement is more comprehensive, and all 100% of the sub-regions AR need to be measured. All measurement points are obtained by measuring the plane of the substrate W to establish a point cloud and obtaining the coordinate information of all points (points) corresponding to the substrate W in the substrate image.

[0122] Regarding the line contour information, the partially enlarged top view image can present, for example, but is not limited to Figure 5 the straight line shown in (a) of Figure 5 , the arc bent between the straight lines shown in (b) of Figure 5The circular hole shown in (c) of, such as Figure 5 The rectangular area shown in (d) of, such as Figure 5 The circular area shown in (e) of, or such as Figure 5 The irregular area shown in (f) of, or any other arbitrary form of circuit structure. The present invention does not limit this. The following will describe the method for obtaining the circuit profile information: such as Figure 6 and Figure 7 As shown, the measurement module 43 can measure and obtain a top width W1 of a circuit, a bottom width W2 of a circuit, a first top-view sidewall width S1, a second top-view sidewall width S2, a circuit length LR, and a side-view sidewall width W3 through the circuit profile information. The first top-view sidewall width S1 and the second top-view sidewall width S2 can be obtained by calculating from the top-view image. For example, the boundaries between the sidewall SW and the top surface US and between the sidewall SW and the substrate W in the top-view image can be obtained respectively. Regarding the acquisition of the polygon perimeter and the circuit length LR, it can be directly obtained by pixel conversion after segmenting the polygon area from the image.

[0123] Regarding the acquisition of the radian, please refer to Figure 8 , the radian is a unit for measuring angles, which is basically the ratio of the arc length to the radius. The basic formula can be expressed as follows:

[0124] ;

[0125] where α is the radian, L is the arc length, and r is the radius of the arc. As Figure 8 shown, the image measuring device 40 measures the length of the arc Ar from the top-view image to obtain the arc length L, and then measures the distance R from the arc Ar to the arc center AD to obtain the radius r, so as to calculate the value of the radian according to the position and shape information of the radian.

[0126] Regarding the acquisition of the circularity, please refer to Figure 9 , the circularity is represented by the radial offset of its actual profile relative to the ideal circle, that is, the difference between the maximum radius and the minimum radius with respect to the same center of the circle. Specifically, it can be represented by the following formula:

[0127] ;

[0128] where △ is the circularity, is the maximum radius of the selected center of the circle, is the minimum radius of the selected center of the circle. As Figure 9 shown, the solid line part is the actual circular pad area, and the dotted line part is the virtual circle set with the center of the circular pad area. The image measuring device 40 selects the center of the circle MD from the top-view image and measures the distance R1 from the center of the circle MD to the farthest arc boundary of the circular pad area to obtain , the distance R2 from the center MD of the circle to the nearest arc boundary of the circular pad area is measured and obtained. , the roundness of the circular pad area or the round hole can be obtained by the above method.

[0129] Regarding the acquisition of concentricity, please refer to Figure 10 , concentricity is a measure of whether the centers of two circles are equal or very close. As Figure 10 shown, the center MD1 of the circle formed by the outer edge boundary B1 of the metal ring is selected from the top view of the image measuring device 40, the center MD2 of the circle formed by the inner edge boundary B2 of the metal ring is selected, the distance DT between the center MD1 and the center MD2 is measured, and the concentricity between the outer edge boundary B1 and the inner edge boundary B2 of the metal ring can be obtained by the above method.

[0130] Next, please refer to Figure 11 , according to the reflection characteristics of the round hole on the substrate W for different light sources, the wall characteristic area or the surface characteristic area can be distinguished into two parts in the fluorescence image or the white light image. The image of the area of interest can be segmented by methods such as but not limited to binarization processing and boundary extraction (or algorithms such as detecting step edges, watershed segmentation algorithms, etc. to segment image blocks), and the wall characteristic area and the surface characteristic area can be directly segmented, and further the boundary of the round hole can be obtained from the area characteristics, and then a bottom surface characteristic area H1, a defect area H2, a wall characteristic area H3, and a top surface characteristic area H4 are obtained, and the detection information is obtained from the boundaries of the above areas. Specifically, the value of the lower aperture can be obtained by substituting the width L1 of the boundary of the bottom surface characteristic area H1 into the viewing distance calculation; the value of the upper aperture can be obtained by substituting the width L2 of the boundary of the wall characteristic area H3 into the viewing distance calculation; the defect length, defect width, and defect position can be obtained by substituting the length L4, width L5 of the boundary of the defect area H2 and the position in the two-dimensional image into the viewing distance calculation, and even the defect type can be further obtained from the above values. On the other hand, the wall characteristic area H3 of the round hole can be more clearly presented in the side view image, which is conducive to detecting the defects on the hole wall.

[0131] The above methods for obtaining various line profile information such as line width, line pitch, aperture, polygon perimeter, radian, roundness, concentricity, etc. are only one example of the present invention and are not used to limit the present invention. Other methods for obtaining line profile information also fall within the scope of protection of the present invention.

[0132] In one embodiment, the image measurement device 40 can obtain line profile information such as the upper width W1 of the line, the lower width W2 of the line, and the sidewall width W3 in the side view from images captured in two different directions. Further three-dimensional line information can be obtained from these three sets of data. In one embodiment, the three-dimensional line information includes, but is not limited to, the line thickness, the line cross-sectional area, or the line volume, etc.

[0133] Specifically, please refer to Figure 12 together. After the image measurement device 40 obtains the upper width W1 of the line, the lower width W2 of the line, and the sidewall width W3 in the side view in the image, a line thickness H of the substrate W can be obtained through trigonometric operations. Among them, when the optical axis direction of the camera is orthogonal to the sidewall region of the line, the sidewall projection length of the sidewall entering the camera is equal to the actual length of the sidewall, and the sidewall width W3 in the side view can be directly obtained through distance and ratio calculations, and the line thickness H can be obtained through the sidewall width W3 in the side view. When the optical axis direction of the image capture device is not orthogonal to the sidewall region of the line, the actual sidewall width W3 in the side view can be obtained by using the shooting angle θ of the second image capture device 32 captured from the side, and the line thickness H can be obtained through the sidewall width W3 in the side view, or the line thickness H can be obtained by directly substituting and calculating from a top view sidewall width S3, the shooting angle θ, and the obtained sidewall projection length. This is not limited in the present invention.

[0134] In one embodiment, after the image measurement device 40 confirms the upper width W1 of the line and the top view sidewall width S3, through the Pythagorean theorem, the line thickness H, the sidewall width W3 in the side view, and the top view sidewall width S3 will conform to the following formula: ; Since the sidewall width W3 in the side view and the top view sidewall width S3 are known, the line thickness H can be obtained after calculation. When the line thickness H has been obtained, the line cross-sectional area A of the section can be calculated and obtained through the trapezoidal formula. The calculation formula is as follows: . After obtaining the cross-sectional area, the image processing device 40 can obtain the current-carrying capacity of the line on the substrate W according to the line cross-sectional area; the current-carrying capacity of the line can be obtained through the following equation: ; where I is the maximum current-carrying capacity, k is a correction factor, △T is the maximum temperature difference, and A is the cross-sectional area of the line. In addition, from the captured top view image and side view image of the line, defects on the line can also be found by image recognition to obtain line defect information.

[0135] Although the cross-sectional area shape of the above-mentioned circuit is illustrated by a trapezoid, it can also be a rectangle or other shapes, which is not limited in the present invention; in addition, the above-mentioned current-carrying equation can also be other calculation formulas that can be referenced and comply with relevant standards such as IPC (for example, IPC-2221). Or in another embodiment, the image measurement device 40 can obtain the current-carrying capacity of the circuit through a lookup method via a look-up table. In the look-up table, values not appearing in the look-up table can be calculated through the k-nearest neighbor method or the insertion method, which depends on the design requirements.

[0136] Please refer to Figure 13 as well. The image measurement device 40 can further obtain the target line segment path L of the metal circuit from the image of the substrate W, and further obtain the circuit volume of the target line segment path L based on the circuit cross-sectional area and the target line segment path L. In another feasible embodiment, after obtaining multiple cross-sectional areas, the circuit volume of the target line segment path L can be obtained by multiplying the line segment cross-sectional area on each cross-section by the corresponding line segment length.

[0137] Based on the above method, the image measurement device 40 can obtain the upper width of the circuit, the lower width of the circuit, the sidewall width in side view, the sidewall area, the circuit thickness, the circuit cross-sectional area, and the circuit volume or other two-dimensional and three-dimensional circuit information, thereby completing the circuit measurement.

[0138] In one embodiment, the substrate information visualization module 44 of the image measurement device 40 is used to display the two-dimensional circuit information (i.e., substrate measurement information), three-dimensional circuit information, and circuit electrical information in the form of a heat map or a grayscale map to present the distribution of the two-dimensional circuit information, three-dimensional circuit information, and circuit electrical information on the substrate W. A heat map is a data visualization technique that displays the absolute quantity of a phenomenon in the form of colors in a two-dimensional space. The color form of the heat map is, for example, but not limited to, using rainbow color mapping, colors of different shades, intensities, or hues, or any other way that can allow people to intuitively see the distribution of the circuit information on the substrate W from the image. Through the continuous change of colors or grayscale, the abnormal change amount and distribution of the circuits on the substrate W are presented, and the selection or definition of individual colors is only an example and is not limited in the present invention. According to the difference in the detected target and function, the substrate distribution information can include, for example, but not limited to, the circuit abnormal distribution information map and the circuit accuracy distribution information map. In a preferred embodiment, the circuit abnormal distribution information map and the circuit accuracy distribution information map can be the full-page information obtained after full-page measurement.

[0139] In order to establish standard data for anomaly detection, in one embodiment, before detection, the measurement system of the present invention can first establish two-dimensional circuit information and three-dimensional circuit information based on a standard wafer, and store the two-dimensional circuit information, three-dimensional circuit information, and circuit electrical information of the standard wafer in a database indexed by circuit position (such as coordinates) as the expected circuit information for each circuit coordinate. When the measurement system officially enters the production line, the substrate information visualization module 44 generates two-dimensional circuit information and three-dimensional circuit information based on the fluorescence image and / or white light image, subtracts the expected circuit information at the corresponding position of the standard wafer, obtains the error value information indexed by coordinates, and determines whether the circuit is abnormal based on whether the error value information exceeds a reasonable threshold. In one embodiment, the expected circuit information can be, for example but not limited to, the standard wafer image pre-stored in the database, or the original computer-aided manufacturing file (Computer-Aided Manufacturing, CAM), or other such data; the standard wafer can be, for example, a master wafer or a good wafer, which is not limited in the present invention. In another embodiment, the expected circuit information can be, for example but not limited to, including circuit position, standard circuit size, and / or reasonable threshold (Threshold). In one embodiment, the error value information can be expressed not only as a pure difference value, but also in the form of percentage error, step size, or other ways, which is not limited in the present invention.

[0140] In one embodiment, the substrate information visualization module 44 compares the two-dimensional circuit information, three-dimensional circuit information, or circuit electrical information with the expected circuit information at the corresponding position to obtain the error value information, and generates the abnormal distribution of all circuits on the substrate based on the error value information to establish the circuit abnormal distribution information.

[0141] For example, the substrate information visualization module 44 presents the abnormal distribution of the entire substrate W on the human-machine operation interface for personnel to intuitively observe the circuit abnormal distribution trend of the substrate W. In a selected embodiment, as Figure 14 shown, color marks KA1 (although represented by hatching in the figure of the embodiment, the color is not limited in the present invention) are marked on the circuit abnormal distribution information diagram I1, which can highlight the circuit segments or areas identified as abnormal on the image. When performing a full inspection of the entire substrate W, these color marks can show the overall abnormal distribution of the substrate W, thereby presenting the full-board circuit abnormal distribution trend.

[0142] As can be seen from the circuit anomaly distribution information diagram I1, the number of anomaly points in the upper region K1 of the substrate W is much larger than that in the lower region K2 of the substrate W, and the anomaly points in the upper region K1 of the substrate W are concentrated in the position closer to the lower part in the upper region K1. In addition, from the distribution of the above-mentioned anomaly points, the change of the circuit anomaly can be seen, so as to facilitate subsequent judgment and adjustment of various variables of the substrate process. In a selected embodiment, the circuit anomaly distribution information diagram I1 can not only present the distribution of anomaly points of the substrate W, but also present the distribution of anomaly points in a selected local area, so as to obtain the statistical quantity of the number of anomaly points in the local area of the substrate W, and the present invention does not limit this.

[0143] Figure 14 The display standard of the color markings shown, for example but not limited to, is displayed based on whether the circuit has abnormal line dimensions, abnormal line patterns, abnormal line positions, etc. or other similar differentiation methods. In an embodiment, through Figure 14 the anomaly points presented by the circuit anomaly distribution information diagram I1 (substrate distribution information) described above, statistical quantification can be further performed based on the number of anomaly points of different circuit types, such as Figure 15 shown by the substrate measurement information diagram I2 of the substrate, the histogram part shows that the number of abnormal line widths is about 36,000, the number of abnormal line spacings is about 10,000, the number of abnormal apertures is about 4,000, the number of abnormal polygon perimeters is about 7,000, the number of abnormal arcs is about 4,600, the number of abnormal roundness is about 7,600, the number of abnormal concentricity is about 5,400, the number of abnormal circuit thicknesses is about 9,500, the number of abnormal cross-sectional areas is about 8,200, the number of abnormal resistances is about 5,200, the number of abnormal impedances is about 3,500, and the number of abnormal current-carrying capacities is about 2,200; the pie chart part shows that the abnormal line width accounts for 10% of the total line width quantity, the abnormal line spacing accounts for 1% of the total line spacing quantity, the abnormal aperture accounts for 45% of the total aperture quantity, the abnormal polygon perimeter accounts for 48% of the total polygon perimeter quantity, the abnormal arc accounts for 38% of the total arc quantity, the abnormal roundness accounts for 15% of the total roundness quantity, the abnormal concentricity accounts for 6% of the total concentricity quantity, the abnormal circuit thickness accounts for 3% of the total circuit thickness quantity, the abnormal cross-sectional area accounts for 2% of the total cross-sectional area quantity, the abnormal resistance accounts for 1.4% of the total resistance quantity, the abnormal impedance accounts for 1% of the total impedance quantity, and the abnormal current-carrying capacity accounts for 0.6% of the total circuit. In an embodiment, the substrate measurement information diagram is presented in the form of, for example but not limited to, a bar chart, a pie chart, a histogram or other forms of charts or tables, and the present invention does not limit this.

[0144] Please also refer to Figure 16, in one embodiment, the substrate information visualization module 44 determines whether the line profile information is abnormal based on the error magnitude of the error value information, and colors the corresponding lines determined to be abnormal to establish the substrate sub-region abnormal distribution map I3. Specifically, the substrate information visualization module 44 can mark the line width defect F1, the arc defect F2, and the concentricity defect F3 on the substrate sub-region abnormal distribution map I3. By coloring the lines, analyze the distribution positions of the abnormal lines to evaluate the abnormal distribution trend of the substrate sub-region.

[0145] Please refer to Figure 17 , in one embodiment, the substrate information visualization module 44 takes the measurement targets on the substrate W as a reference to generate the distribution of two-dimensional line information, three-dimensional line information, and line electrical property information of all measurement targets on the substrate W, so as to establish the line accuracy distribution information.

[0146] For example, the substrate information visualization module 44 can present the line accuracy distribution information map of the measurement targets on the human-machine operation interface for personnel to intuitively view the line accuracy distribution trend of the entire substrate W. In one embodiment, personnel can select any type of line segment through the human-machine operation interface 50, and use the two-dimensional line information, three-dimensional line information, and line electrical property information of the selected line segment as the measurement reference, so as to obtain the line accuracy distribution information map I4 of the entire substrate W. Specifically, by selecting any line segment in any substrate sub-region of the substrate W, and using the two-dimensional line information, three-dimensional line information, and line electrical property information of the selected line segment as the measurement reference, quantify the relative values of the two-dimensional line information, three-dimensional line information, and line electrical property information of the corresponding line segments at the positions corresponding to the selected line segment on other substrate sub-regions, and then present the differences in color, so as to analyze the overall accuracy distribution trend of the selected line segment and all corresponding position line segments of the entire substrate W. As Figure 17 shown in the left table, taking the characteristic impedance line Rd1 of the sub-region Sb1 as an example, first select multiple target line segments by means of box selection, and after selecting a line segment among the multiple target line segments, select and confirm to determine the specified line segment (i.e., the characteristic impedance line Rd1); then select the measurement target of the specified line segment (in this embodiment, the lower line width (Lower Width) is selected), the lower line width value of the selected line segment is 54.636, and the maximum value (in this embodiment, 73.12) and the minimum value (in this embodiment, 40.861) of the corresponding line segments of the overall circuit board (i.e., the lower line widths of the corresponding position line segments of other sub-blocks) are respectively used as the limit values for color marking (for example, green is the upper limit value, blue is the lower limit value, and white is the standard value), and map the measured lower line width values of the corresponding line segments of each sub-region to the colors between the upper limit value and the lower limit value to show the full-board trend of the specified line segment.

[0147] In one embodiment, from Figure 17It can be seen that, based on the line profile information of the selected line segment, a line accuracy distribution information diagram I4 of the two-dimensional line information (or three-dimensional line information, line electrical information) corresponding to the entire substrate W for the line segment is established. Among them, the area whose color is closer to gray indicates that the two-dimensional line information (or three-dimensional line information, line electrical information) of its corresponding line segment is closer to the two-dimensional line information (or three-dimensional line information, line electrical information) of the selected line segment. The area whose color is closer to black indicates that the two-dimensional line information (or three-dimensional line information, line electrical information) of its corresponding line segment is greater than the two-dimensional line information (or three-dimensional line information, line electrical information) of the selected line segment, and the area whose color is closer to white indicates that the two-dimensional line information (or three-dimensional line information, line electrical information) of its corresponding line segment is less than the two-dimensional line information (or three-dimensional line information, line electrical information) of the selected line segment. Personnel can intuitively understand the full-board line accuracy distribution trend of the substrate W for a specific line segment from the different color blocks presented in the line accuracy distribution information diagram I4. In an alternative embodiment, Figure 17 the colors in the line accuracy distribution information diagram I4 can be converted into a color image, and the change trend is presented through a gradient color.

[0148] In one embodiment, the process capability assessment module 45 of the image measurement device 40 is used to obtain a process capability index (Capability Process Index, CPK) according to the maximum value, minimum value, and average value of the two-dimensional line information (or three-dimensional line information, line electrical information) of all measurement targets, and in combination with the expected line information of the measurement targets. Specifically, by using the expected line information obtained from the standard wafer as described above, plus the standard deviation (σ) allowed in the process, the upper specification limit (USL) and lower specification limit (LSL) of the selected line segment can be obtained, that is, the maximum and minimum values allowed by the process, and the average value (μ) of the two-dimensional line information (or three-dimensional line information, line electrical information) of the entire substrate W for a specific line segment can be obtained through the full-board line accuracy distribution diagram I4. Substituting the above values into the following calculation formula can calculate the process capability index (CPK):

[0149] ;

[0150] Through the above formula, a unitless CPK value can be obtained to evaluate the process capability. In one embodiment, when the CPK value is greater than or equal to 1.33, it indicates that the process capability is good. If the CPK value is less than 1.33, it indicates that the process needs to be improved. The present invention is not limited thereto.

[0151] Please also refer to Figure 18, in one embodiment, the defect analysis device 60 of the three-dimensional image information measurement system 100 is used to determine whether the fluorescence image and / or the white light image has a circuit defect based on two-dimensional circuit information (or three-dimensional circuit information, circuit electrical information), and generate a circuit defect result. Among them, the circuit defect result is, for example but not limited to, determining that the circuit is short-circuited, open-circuited, or has insufficient current-carrying capacity, etc. For example, the defect analysis device 60 can obtain the expected size of the circuit based on a standard wafer, and compare it with the circuit size measured from the fluorescence image or the white light image. If the error between the expected circuit size and the measured circuit size exceeds a reasonable threshold, the defect analysis device 60 determines that there is a circuit defect in the image. If the error is within the allowable range, the defect analysis device 60 determines that there is no circuit defect in the image; or the defect analysis device 60 can compare the circuit based on the standard wafer and the two-dimensional fluorescence image and / or the two-dimensional white light image to determine whether there is a circuit defect in the two-dimensional fluorescence image and / or the two-dimensional white light image.

[0152] In one embodiment, the defect analysis device 60 can cross-compare the defect area of the fluorescence image with the corresponding defect area of the white light image according to the circuit defect results generated by the fluorescence image and the white light image to determine the authenticity of the defect. In order to perform image comparison, the defect analysis device 60 needs to align the images first. The image alignment steps, for example, include feature extraction of these images. The extracted features are, for example but not limited to, corner points, edges, or specific patterns in the image, etc. According to the result of feature matching, the conversion method of these images is calculated, for example but not limited to, image conversions such as translation, rotation, or scaling, etc., to facilitate subsequent image comparison. The methods of the image conversion are well-known to those with ordinary knowledge in the art and are not limited in the present invention. For example, as Figure 18 (a) shows, the left figure represents Figure 1 the two-dimensional fluorescence image FI of the defect area of the substrate W in, and the right figure represents the two-dimensional white light image WI corresponding to the aforementioned defect area. In the two-dimensional fluorescence image FI, small chemical residues or oxidation and other defects D can be shown on the circuit L. Because such defects are related to changes in chemical components, they will emit fluorescence based on the irradiation of the excitation light, but such defects are difficult to detect by white light detection. Therefore, the circuit L' does not show the above defects D in the two-dimensional white light image WI. Another example, as Figure 18 (b) shows, the difference from the previous embodiment is that the defect D' is, for example, a scratch, a crack, etc. The appearance characteristics of such defects can be highlighted in white light detection. Generally, such defects are difficult to detect in fluorescence detection unless such defects are contaminated or affected by chemical substances or fluorescent materials, so that such defects can be highlighted in fluorescence detection. In the present invention, by cross-comparing the two-dimensional fluorescence image and the two-dimensional white light image, different types of defects are highlighted in different images to improve the accuracy of judging different defects.

[0153] In one embodiment, according to the material of the area to be measured on the substrate W, when performing cross-comparison, the defect analysis device 60 determines to use the defective area of the two-dimensional fluorescence image or the corresponding defective area of the two-dimensional white light image as the standard reference area. Generally, the manufacturing components of the substrate W include multiple materials, such as but not limited to materials such as glass, silicon, and / or metal. For example, if it is desired to detect an area to be measured on the substrate W with a glass material, since defects on the glass surface (such as scratches, cracks, etc.) generally have a low correlation with changes in chemical composition and are difficult to detect in fluorescence detection, therefore, the defect analysis device 60 can select the corresponding defective area of the two-dimensional white light image as the standard reference area to facilitate the judgment of defects in the glass material area. Another example, if it is desired to detect an area to be measured on the substrate W with a silicon material, since there is a high possibility of minute chemical residues or oxidation defects in silicon due to chemical composition changes, such defects are difficult to detect in white light detection but can be clearly highlighted in fluorescence detection. Therefore, the defect analysis device 60 can select the defective area of the two-dimensional fluorescence image as the standard reference area to facilitate the judgment of defects in the silicon material area. In the present invention, according to the material of the area to be measured on the substrate W to be detected, an image that is more conducive to highlighting defects can be selected as the detection reference, improving the accuracy of defect detection.

[0154] Please refer to Figure 19 simultaneously. Based on the above image three-dimensional information measurement system 100, the present invention further discloses an image three-dimensional information measurement method, and the steps will be described in detail below.

[0155] First, in the fluorescence mode, the excitation light generating device 10 provides excitation light to the substrate W to cause the substrate W to generate fluorescence, and the image capturing device 30 captures an image of the substrate W in the fluorescence mode to obtain a fluorescence image (step S01).

[0156] Next, in the white light mode, the white light generating device 20 provides white light to the substrate W, and an image of the substrate W is captured in the white light mode to obtain a white light image (step S02).

[0157] Next, the image measuring device 40 establishes substrate measurement information based on the fluorescence image and / or the white light image (step S03). In one embodiment, the substrate measurement information may include, for example, but not limited to, information such as line width, line pitch, aperture, polygon perimeter, arc, roundness, or concentricity.

[0158] Next, the image measuring device 40 generates three-dimensional circuit information based on the substrate measurement information (step S04). In one embodiment, the three-dimensional circuit information includes, but is not limited to, circuit thickness, circuit cross-sectional area, or circuit volume, etc. After obtaining the three-dimensional circuit information, the image measuring device 40 can obtain circuit electrical information such as resistance, impedance, and current-carrying capacity through these three-dimensional circuit information.

[0159] Finally, using the substrate information visualization module 44 of the image measuring device 40, substrate distribution information is generated by analyzing two-dimensional line information, three-dimensional line information, and line electrical information. In one embodiment, the substrate distribution information is displayed in the form of a heat map or a grayscale map to present the distribution of the two-dimensional line information (three-dimensional line information, line electrical information) of the substrate W. In one embodiment, the substrate distribution information includes a line abnormal distribution information map and a line accuracy distribution information map. Among them, the establishment of the line abnormal distribution information is obtained by comparing the two-dimensional line information (three-dimensional line information, line electrical information) with the expected line information at the corresponding position to obtain the error value information, and based on the error value information, all the line abnormal distribution conditions on the substrate W are generated to establish the line abnormal distribution information map; the establishment of the line accuracy distribution information is based on the measurement target on the substrate W as a reference, and the distribution of the two-dimensional line information (three-dimensional line information, line electrical information) of all the measurement targets on the substrate W is generated to establish the line accuracy distribution information.

[0160] In one embodiment, the process capability evaluation module 45 of the image measuring device 40 can obtain the process capability index (CPK) according to the maximum value, minimum value, and average value in the line profile information of all the measurement targets, and in combination with the expected line information of the measurement targets. When the process capability index is greater than or equal to 1.33, it indicates that the process capability is good. If the CPK value is less than 1.33, it indicates that the process needs to be improved.

[0161] Please also refer to Figure 20 , based on the above image three-dimensional information measurement method, another substrate defect analysis method 300 is disclosed, and the steps will be described in detail below.

[0162] First, the defect analysis device 60 of the image three-dimensional information measurement system 100 can determine whether the fluorescence image and / or the white light image has line defects and generate a line defect result (step S301). In one embodiment, based on the expected line information obtained from the standard wafer, the two-dimensional line information (three-dimensional line information, line electrical information) measured based on the fluorescence image or the white light image can be compared. If the error value obtained by the comparison exceeds a reasonable threshold, the defect analysis device 60 determines that the image has line defects, otherwise it determines that there are no line defects. For example, but not limited to, determining line short circuits, open circuits, insufficient current-carrying capacity and other defects.

[0163] In one embodiment, the defect analysis device 60 can cross-compare the defective area of the fluorescence image with the corresponding defective area of the white light image according to the line defect results generated from the fluorescence image and the white light image to determine the authenticity of the defect (step S302). In the present invention, by cross-comparing the fluorescence image and the white light image and using the differences presented by different defects for different light sources in the image, the defects can be highlighted to facilitate the judgment and confirmation of whether the defects are real defects.

[0164] In one embodiment, the defect analysis device 60 can determine to use the defective area of the fluorescence image or the corresponding defective area of the white light image as the standard reference area during cross-comparison according to the material of the area to be measured on the substrate W (step S303). In the present invention, by selecting the fluorescence image or the white light image as the detection reference according to the different materials of the area to be measured on the substrate W, the respective advantages of fluorescence detection and white light detection can be effectively utilized, and the accuracy of defect detection can be improved.

[0165] In summary, the present invention performs three-dimensional inspection / measurement on the substrate through the fluorescence image and / or the white light image. The inspection / measurement application can be carried out on the substrate through the fluorescence image to obtain relatively accurate line measurement quality. The corresponding inspection / measurement operation can also be performed on the circuit board that cannot be inspected / measured by fluorescence through the white light image. Thus, precise three-dimensional inspection / measurement is achieved through the mutual complementarity of fluorescence inspection / measurement and white light inspection / measurement.

[0166] The present invention has been described in detail above. The above description is only one preferred embodiment of the present invention, and the scope of implementation of the present invention cannot be limited thereby. That is, all equivalent changes and modifications made according to the scope of the patent application of the present invention should still fall within the scope covered by the patent of the present invention.

Claims

1. A dual-light source substrate image three-dimensional information measurement system, characterized in that: include: An excitation light generating device, used for providing an excitation light to a substrate in a fluorescence mode, so that the substrate generates fluorescence; a white light generating device, for providing a white light to the substrate in a white light mode; an image capture device for capturing an image of the substrate in the fluorescence mode to obtain a fluorescence image, and / or capturing an image of the substrate in the white light mode to obtain a white light image; as well as An image measuring device is connected or coupled to the image capturing device, and establishes substrate measurement information and generates three-dimensional line information according to the fluorescent image and / or the white light image.

2. The dual-light source substrate image three-dimensional information measurement system according to claim 1, characterized in that: The excitation light generating device provides the excitation light to illuminate the peripheral area of ​​a circuit adjacent to the substrate, so that the organic matter or fluorescent marking material on the peripheral surface of the circuit is excited to further generate diffuse fluorescence, thereby generating a brightness difference between the peripheral area of ​​the circuit and the circuit itself, and generating a brightness difference between the side wall of the circuit and the upper surface.

3. The dual-light source substrate image three-dimensional information measurement system according to claim 1, characterized in that: The image measuring device obtains a line upper width, a line lower width and a line sidewall width according to the fluorescent image and / or the white light image intercepted from at least two different viewing angles to generate the three-dimensional line information.

4. The dual-light source substrate image three-dimensional information measurement system according to claim 3, characterized in that: The three-dimensional line information includes a line thickness, a line cross-sectional area or a line volume, and the image measuring device obtains the line volume according to the line cross-sectional area and a line length.

5. The dual-light source substrate image three-dimensional information measurement system according to claim 1, characterized in that: The image measuring device analyzes the substrate measurement information to generate substrate distribution information. The substrate distribution information is displayed in a heat map or a grayscale map to present the distribution of the substrate measurement information of the substrate. The substrate distribution information includes a line abnormality distribution information map and a line accuracy distribution information map.

6. The dual-light source substrate image three-dimensional information measurement system according to claim 5, characterized in that: The image measuring device uses a measurement target on the substrate as a reference to generate the distribution of the substrate measurement information or the three-dimensional line information of all the measurement targets on the substrate to establish the line accuracy distribution information map.

7. The dual-light source substrate image three-dimensional information measurement system according to claim 6, characterized in that: The image measuring device obtains a process capability index according to the maximum value, minimum value and average value of the substrate measurement information or the three-dimensional line information of all the measurement targets and combines the expected line information of the measurement targets.

8. The dual-light source substrate image three-dimensional information measurement system according to claim 5, characterized in that: The image measuring device compares the substrate measurement information or the three-dimensional line information with the expected line information of the corresponding position to obtain error value information, and generates all line abnormality distribution conditions on the substrate based on the error value information to establish the line abnormality distribution information map.

9. A dual-light source substrate image three-dimensional measurement method, characterized in that: include: Providing an excitation light to a substrate in a fluorescence mode to cause the substrate to generate fluorescence; Providing a white light to the substrate in a white light mode; capturing an image of the substrate in the fluorescence mode to obtain a fluorescence image, and / or capturing an image of the substrate in the white light mode to obtain a white light image; as well as A substrate measurement information is established according to the fluorescent image and / or the white light image and a three-dimensional line information is generated.

10. The method for three-dimensional measurement of substrate images using dual light sources according to claim 9, characterized in that: The excitation light is provided to illuminate the peripheral area of ​​a circuit adjacent to the substrate, so that the organic matter or fluorescent marking material on the peripheral surface of the circuit is excited to further generate diffuse fluorescence, so that a brightness difference is generated between the peripheral area of ​​the circuit and the circuit itself, and a brightness difference is generated between the side wall of the circuit and the upper surface.

11. The method for three-dimensional measurement of substrate images using dual light sources according to claim 9, wherein: A line upper width, a line lower width and a line sidewall width are obtained according to the fluorescent image and / or the white light image intercepted and obtained from at least two different viewing angles, so as to generate the three-dimensional line information.

12. The method for three-dimensional measurement of substrate images using dual light sources according to claim 9, wherein: The three-dimensional line information includes a line thickness, a line cross-sectional area or a line volume, and the line volume is further obtained according to the line cross-sectional area and a line length.

13. The method for three-dimensional measurement of substrate images using dual light sources according to claim 9, wherein: The substrate measurement information is further analyzed to generate substrate distribution information, which is displayed in the form of a heat map or a grayscale map to present the distribution of the substrate measurement information of the substrate. The substrate distribution information includes a line abnormality distribution information map and a line accuracy distribution information map.

14. The method for three-dimensional measurement of substrate images using dual light sources according to claim 13, wherein: The substrate measurement information or the three-dimensional line information is further compared with the expected line information of the corresponding position to obtain error value information, and the abnormal distribution of all lines on the substrate is generated based on the error value information to establish the abnormal distribution information map of the line.

15. The method for three-dimensional measurement of substrate images using dual light sources according to claim 13, wherein: Taking a measurement target on the substrate as a reference, the distribution of the substrate measurement information or the three-dimensional line information of all the measurement targets on the substrate is generated to establish the line accuracy distribution information map.

16. The method for three-dimensional measurement of substrate images using dual light sources according to claim 15, characterized in that: A process capability index is obtained according to the maximum value, the minimum value and the average value of the substrate measurement information or the three-dimensional line information of all the measurement targets and combined with the expected line information of the measurement target.

Images