Multi-beam optical fiber electronic exposure machine

Abstract

The invention relates to a multi-beam optical fiber electronic exposure machine for exposing a sample, which comprises a light source for emitting laser, an electron source and an electron optical component, the electron source comprises an optical fiber component coupled with the light source and an electron emission layer, the electron emission layer at least comprises an electron excitation layer, and the optical fiber component comprises a plurality of fiber cores for transmitting laser; the electron excitation layer is arranged on a light emitting path of laser emitted by the fiber cores, so that the electron excitation layer can emit electron beams under excitation of the laser, the electron excitation layer comprises at least one of a zero-dimensional material, a one-dimensional material and a two-dimensional material, one end of the light modulation part is connected to the light source, and the other end of the light modulation part is connected with the multiple fiber cores. The light modulator is used for controlling whether the laser emitted by the light source is propagated into the corresponding fiber cores or not. The electron optical assembly is arranged on the electron beam emergent side of the electron source and used for adjusting the deflection direction of the electron beam so that the electron beam can be incident to the sample. The exposure efficiency of sample exposure can be improved.

Description

Technical Field

[0001] This application relates to the technical field of electron exposure machines, and particularly to a multi-beam fiber optic electron exposure machine. Background Art

[0002] An electron exposure machine is a patterning means applied in semiconductor processes. The electron beam excited by the electron exposure machine can denature the photoresist on the surface of the sample, cause cross-linking or decomposition of the organic chain structure of the photoresist, or transfer the designed pattern to the photoresist based on other mechanisms, so that the photoresist becomes a temporary mask for subsequent patterning operations.

[0003] The exposure efficiency of the electron exposure machine in the related art is relatively low. Summary of the Invention

[0004] Based on this, in view of the problem of relatively low exposure efficiency of the electron exposure machine in the related art, it is necessary to provide a multi-beam fiber optic electron exposure machine.

[0005] A multi-beam fiber optic electron exposure machine for exposing a sample, the multi-beam fiber optic electron exposure machine comprising:

[0006] A light source for emitting laser light;

[0007] An electron source including an optical fiber assembly coupled to the light source and an electron emission layer, the electron emission layer including at least an electron excitation layer, the optical fiber assembly including a plurality of cores for transmitting the laser light; the electron excitation layer is disposed on the light output path of the core emitting the laser light so that the electron excitation layer can emit an electron beam under the excitation of the laser light; the electron excitation layer includes at least one of a zero-dimensional material, a one-dimensional material, and a two-dimensional material;

[0008] The electron source further includes an optical modulator, one end of the optical modulator is connected to the light source, the other end of the optical modulator is respectively connected to the plurality of cores of the optical fiber assembly, and the optical modulator is used to control whether the laser light emitted by the light source respectively propagates into the corresponding cores; and

[0009] An electron optical assembly disposed on the electron beam output side of the electron source, the electron optical assembly being used to adjust the focusing and deflection directions of the electron beam so that the electron beam is incident on the sample to form a preset exposure pattern on the sample.

[0010] In one embodiment, the optical fiber assembly includes a plurality of optical fibers arranged in an array, and an electron excitation layer is provided on the end surface of one end of each optical fiber that emits laser light, so that the electron excitation layer is located on the light output path of the core of the corresponding optical fiber that emits the laser light.

[0011] In one embodiment, the end face of the light-emitting end of the optical fiber assembly is arranged at an angle with respect to the extending direction of the fiber core;

[0012] The electron-emitting layer is disposed on the end face of the light-emitting end of the optical fiber assembly, and the electron-exciting layer covers the fiber core of the optical fiber assembly. The laser emitted from the fiber core can directly irradiate the electron-emitting layer, so that the electron-exciting layer is excited by the laser emitted from the fiber core and emits electrons.

[0013] In one embodiment, the optical fiber assembly is configured to include a plurality of perforated optical fibers, and the perforated optical fibers have light-guiding holes;

[0014] The electron-exciting layer is at least disposed on the side wall of the light-guiding hole and extends along the longitudinal extension direction of the light-guiding hole to the light-emitting end of the optical fiber assembly.

[0015] In one embodiment, the optical fiber assembly is configured to include a plurality of perforated optical fibers, and the perforated optical fibers have light-guiding holes;

[0016] The electron-emitting layer is disposed on the end face of the light-emitting end of the perforated optical fiber, and the electron-exciting layer covers one end of the light-guiding hole located at the end face of the light-emitting end;

[0017] The laser emitted from the perforated optical fiber can directly irradiate the electron-emitting layer, so that the electron-exciting layer is excited by the laser emitted from the perforated optical fiber and emits electrons.

[0018] In one embodiment, a pointed end portion is provided at one end of the optical fiber where the laser is emitted;

[0019] The electron-exciting layer covers the surface of the pointed end portion of the optical fiber;

[0020] The optical fiber includes the fiber core for transmitting the laser. The laser emitted from the fiber core can directly irradiate the electron-emitting layer, so that the electron-exciting layer is excited by the laser emitted from the fiber core and emits electrons.

[0021] In one embodiment, the optical fiber assembly includes a plurality of cladding layers corresponding to the fiber cores one by one. The cladding layers are correspondingly wrapped around the fiber cores to form the optical fibers with the fiber cores;

[0022] One end of the optical fiber where the laser is emitted is provided with a light leakage notch along the radial direction of the optical fiber;

[0023] The electron-emitting layer is disposed on the bottom wall surface of the light leakage notch. The bottom wall surface of the light leakage notch is configured as a plane, and the projection of the electron-exciting layer on the bottom wall surface covers the projection of the fiber core on the bottom wall surface;

[0024] The electron excitation layer also extends to the light output end of the optical fiber.

[0025] In one embodiment, the optical fiber assembly includes a plurality of the cores and a cladding layer wrapping the plurality of cores;

[0026] The electron excitation layer is disposed on the light output end of the optical fiber assembly, so that the electron excitation layer is located on the light output path where the plurality of cores emit the laser.

[0027] In one embodiment, the electron excitation layer is disposed on the end face of the light output end of the optical fiber assembly;

[0028] The laser emitted by the optical fiber assembly can directly irradiate on the electron emission layer, so that the electron excitation layer is excited by the laser emitted by the optical fiber assembly and emits electrons.

[0029] In one embodiment, the end face of the light output end of the optical fiber assembly is disposed at an angle with respect to the extending direction of the core;

[0030] The laser emitted by the optical fiber assembly can directly irradiate on the electron emission layer, so that the electron excitation layer is excited by the laser emitted by the optical fiber assembly and emits electrons.

[0031] In one embodiment, a pointed end portion is provided at one end of the optical fiber assembly that emits laser;

[0032] The electron excitation layer covers the surface of the pointed end portion of the optical fiber assembly;

[0033] The laser emitted by the optical fiber assembly can directly irradiate on the electron emission layer, so that the electron excitation layer is excited by the laser emitted by the optical fiber assembly and emits electrons.

[0034] In one embodiment, the light modulation member includes one of a spatial light modulator, an optical switch, and an electro-optic modulator.

[0035] In one embodiment, the electron optical assembly includes a focusing magnetic lens and a deflection coil, and the focusing magnetic lens and the deflection coil are disposed at intervals along the emission direction of the electron beam on the electron beam emission side of the electron source.

[0036] In one embodiment, the multi-beam fiber electron exposure machine further includes a housing;

[0037] The housing has a vacuum chamber, and the electron source and the electron optical assembly are sequentially disposed in the vacuum chamber;

[0038] The housing is provided with an opening communicating with the vacuum chamber, and the light incident end of the optical fiber assembly of the electron source is exposed through the opening and coupled to the light source;

[0039] The outer peripheral wall of the optical fiber assembly is sealingly connected to the inner side wall of the opening.

[0040] In one embodiment, the electron source further includes a conductive connection layer disposed on the optical fiber assembly and electrically connected to the electron excitation layer.

[0041] In one embodiment, the electron source further includes an anode having a first electron channel, and the electron optical assembly has a second electron channel communicating with the first electron channel;

[0042] A preset electric field is provided between the anode and the electron excitation layer, and the electron beam can pass through the first electron channel and the second electron channel under the drive of the preset electric field and be incident on the sample.

[0043] In one embodiment, the thickness of the electron excitation layer is less than or equal to 50 nm.

[0044] In one embodiment, the included angle between the axial direction of the one-dimensional material in the electron excitation layer and the outgoing direction of the laser is 0 to 90°.

[0045] In one embodiment, the electron excitation layer includes at least two two-dimensional materials stacked in sequence along the laser outgoing direction; or

[0046] The electron excitation layer includes at least two two-dimensional materials with different materials connected to each other on the same plane.

[0047] In one embodiment, the electron excitation layer includes zero-dimensional materials and zero-dimensional materials disposed at the ends and / or sides of the one-dimensional materials.

[0048] In one embodiment, the electron excitation layer includes zero-dimensional materials and two-dimensional materials, and the zero-dimensional materials are disposed on the surfaces of the two-dimensional materials.

[0049] In one embodiment, the electron excitation layer includes one-dimensional materials and two-dimensional materials, and the one-dimensional materials are disposed on the surfaces of the two-dimensional materials.

[0050] The above multi-beam fiber optic electron exposure machine uses a fiber optic component including multiple cores to be able to transmit multiple laser beams simultaneously, so as to be able to excite multiple electron beams, and then the multiple electron beams are adjusted to the sample by the electron optical component, and then multiple focused electron beam spots can be formed on the sample, and the sample is exposed simultaneously through the multiple focused electron beam spots, thereby improving the exposure efficiency. And the electron source of the present application uses at least one of three low-dimensional materials, namely zero-dimensional materials, one-dimensional materials and two-dimensional materials, as the material for emitting electrons, without considering the transfer and scattering process of electrons in the low-dimensional material between the front and rear cross-sections of the low-dimensional material, that is, the process of electrons in the low-dimensional material being excited by laser and emitted into the vacuum is an ultrafast process on the femtosecond scale, which is convenient for forming an electron beam with a better shape, can reduce the need for additional modulation of the electron beam, and thus improve the exposure efficiency. And the excitation of electrons in the low-dimensional material is affected by the laser, and by adjusting the laser through the optical modulation component, the emission of the electron beam in each core can be sensitively modulated, so as to control the exposure dose of the electron beam and improve the exposure efficiency. Description of the Drawings

[0051] Figure 1 The structural schematic diagram of a multi-beam fiber optic electron exposure machine of the present application is shown.

[0052] Figure 2 Shows Figure 1 The enlarged schematic diagram of part A of

[0053] Figure 3 Shows Figure 1 The structural schematic diagram of the electron beam of the multi-beam fiber optic electron exposure machine shown focusing on the sample to form multiple focused electron beam spots.

[0054] Figure 4 The structural schematic diagram of an embodiment in which the cores in the fiber optic component of the present application are arranged in an array is shown.

[0055] Figure 5 The structural schematic diagram of an embodiment in which the cores in the fiber optic component of the present application are closely arranged to form a pixel fiber is shown.

[0056] Figure 6 Shows Figure 4 The structural schematic diagram of the end face of the light-emitting end of the fiber in the embodiment being arranged at an angle with the extending direction of the core.

[0057] Figure 7 Shows Figure 4 The structural schematic diagram of the light-emitting end of the fiber in the embodiment being provided with a light leakage notch.

[0058] Figure 8 Shows Figure 7 The side view of

[0059] Figure 9 Shows Figure 4Schematic diagram of the structure where the electron excitation layer is disposed on the sidewall of the light guiding hole of the fiber with holes in the embodiment.

[0060] Figure 10 Shows Figure 9 An enlarged schematic diagram of part C of

[0061] Figure 11 Shows Figure 4 Schematic diagram of the structure where the electron excitation layer is disposed on the end face of the light output end of the fiber with holes in the embodiment.

[0062] Figure 12 Shows Figure 11 An enlarged schematic diagram of part D of

[0063] Figure 13 Shows Figure 4 Schematic diagram of the structure where the light output end of the fiber in the embodiment is provided with a pointed end portion.

[0064] Figure 14 Shows Figure 13 An enlarged schematic diagram of part E of

[0065] Figure 15 Schematic diagram of the structure where the auxiliary layer is disposed on one side of the end face of the electron excitation layer close to the light output end.

[0066] Figure 16 Shows Figure 4 Schematic diagram of the process of the preparation method of the electron source in the embodiment.

[0067] Explanation of reference numerals:

[0068] 10. Multi-beam fiber electron exposure machine;

[0069] 100. Electron source; 101. Fiber component; 110. Fiber; 111. Core; 112. Cladding layer; 1101. Light input end; 1102. Light output end; 11021. End face; h. Light leakage notch; h1. Bottom wall surface; h2. Side wall surface; k. Side wall of the light guiding hole; j. Pointed end portion; j1. Surface; 120. Electron emission layer; 121. Electron excitation layer; 1211. First part; 1212. Second part; 122. Auxiliary layer; 130. Conductive connection layer; 131. First conductive part; 132. Second conductive part;

[0070] 200. Light source;

[0071] 300. Outer shell; 310. Vacuum chamber;

[0072] 400. Sample stage; 410. Sample;

[0073] 500. Light modulation component;

[0074] 600, Electron-optical component; 610, Focusing magnetic lens; 620, Deflection coil;

[0075] 20, Temporary substrate;

[0076] 30, Perforated slide;

[0077] 40, Annular heating sheet. Detailed implementation manner

[0078] To make the above objects, features, and advantages of the present application more apparent and understandable, the following describes the detailed implementation manner of the present application in conjunction with the accompanying drawings. Many specific details are set forth in the following description to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0079] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation of the present application.

[0080] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present application, "a plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0081] In the present application, unless otherwise clearly defined and limited, the terms "mount", "connect", "connection", "fixation", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0082] In this application, unless otherwise clearly defined and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or simply means that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or simply means that the horizontal height of the first feature is less than that of the second feature.

[0083] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are only for the purpose of illustration and do not represent the only implementation.

[0084] An electron exposure machine is a patterning means applied to semiconductor processes. Similar to ultraviolet exposure, an electron beam can denature the photoresist on the processing surface, causing cross-linking or decomposition of its organic branched-chain structure, or based on other mechanisms, transferring the designed pattern onto the photoresist. At this time, the photoresist becomes a temporary mask for subsequent patterning operations, and this step is a core step in the integrated circuit process. Electron beam exposure has outstanding advantages in terms of lithography accuracy and the ultimate line width. Using electron beam exposure, it is relatively easy to achieve exposure with nanometer-level accuracy.

[0085] The increase in the complexity of the exposed pattern and the increase in the size of the exposed pattern will both lead to a low exposure efficiency of the electron exposure machine in the related art. The prior art usually forms multiple groups of electron beam arrays for simultaneous exposure by setting up a diaphragm array, a beam shutter array and a microlens array to improve the exposure efficiency. However, due to factors such as volume, it is easily restricted, and the components such as the diaphragm array and the beam shutter array it sets up have a relatively complex structure and occupy a large amount of space in the vacuum chamber, which is not conducive to the miniaturization design of the electron exposure machine. Moreover, the array operation is extremely vulnerable to the environment, with a high failure rate and poor fault tolerance, and it is relatively difficult to repair.

[0086] In traditional technologies, for thermionic electron sources, materials with metallic properties such as tungsten filaments and lanthanum hexaboride are mainly selected. When heated to thousands of degrees Celsius, electrons are thermally excited and escape from the material surface to form vacuum electrons. For field emission electron sources, metallic tips such as tungsten are mainly selected. Under the action of a strong external electric field, a tip discharge effect is generated. Among them, the electron beam emitted by the thermionic electron source can operate in a relatively poor vacuum environment, has good environmental adaptability and stability, but has a low brightness and poor coherence. The electron beam of the field emission electron source has a high brightness and good coherence, but has high requirements for vacuum degree and is very sensitive to vibrations. Whether it is a thermionic electron source or a field emission electron source, the regulation of electron emission properties is limited, and it is impossible to balance the emission efficiency and stability.

[0087] In traditional technologies, for photoemission electron sources, metallic materials such as Au are used as the materials for the electron emission layer, with a thickness of more than 50 nm, even reaching hundreds of nanometers. However, the inventors of the present application have found through research that the electron emission layer of metallic materials has a relatively large thickness, and the distance between the bottom layer directly interacting with the laser and the surface layer for electron emission is relatively far (50 nm to hundreds of nanometers). During the process of electrons excited from the bottom layer passing through the electron emission layer, they are easily affected by metal lattice scattering, thereby affecting the emission efficiency. Moreover, metallic materials are prone to damage under high-power laser irradiation, affecting the service life of the electron emission layer, and thus affecting the electron emission efficiency and stability.

[0088] In traditional technologies, there is also a type of photoemission electron source that excites electrons by external laser incident on the surface of a metallic tip. The size of the metallic tip is on the nanometer scale, resulting in a relatively high difficulty in aligning the laser spot to the metallic tip. If a high-magnification microscope is set up to align the external laser to the metallic tip, the tolerance to environmental vibrations is poor.

[0089] In addition, in traditional technologies, graphene is used as a saturable absorber. Graphene has broadband saturable absorption characteristics and a fast recovery time, and is used in the Q-switching and mode-locking of lasers, or the laser spectrum is adjusted by graphene to achieve sensing detection.

[0090] Based on this, it is necessary to provide an electron source that can balance electron emission efficiency and stability.

[0091] The present application uses low-dimensional materials such as zero-dimensional materials, one-dimensional materials, or two-dimensional materials as the materials for the electron emission layer. The low-dimensional materials emit electrons under the action of effects such as the photoelectric effect, multi-photon emission, and optical field emission under laser irradiation. The low-dimensional materials have an atomic thickness, no dangling bonds, and stable properties, thus having characteristics such as good stability and high service life. Moreover, the low-dimensional materials can be directly integrated with optical fibers, and the optical fibers can provide a stable excitation source with adjustable wavelength, polarization, and optical mode, and can be applied to different application scenarios, such as the multi-beam fiber electron exposure machine 10 described below.

[0092] Refer to Figure 1 and Figure 2 As shown, the present application provides a multi-beam fiber optic electron exposure machine 10 for exposing a sample 410, which can achieve the advantages of improving exposure efficiency, precise regulation, improving exposure quality, and facilitating miniaturized design.

[0093] The multi-beam fiber optic electron exposure machine 10 includes a light source 200, an electron source 100, and an electron optical component 600. The light source 200 can emit laser light for excitation. The laser light propagates to the electron source 100 to excite the electron source 100 to form an electron beam. The electron beam is modulated by the electron optical component 600 and projected onto the sample 410 to expose the sample 410.

[0094] The electron source 100 includes an optical fiber component 101 coupled to the light source, and an electron emission layer 120. The electron emission layer at least includes an electron excitation layer 121. The optical fiber component 101 has a light input end 1101 coupled to the light source 200 and a light output end 1102 relative to the light input end 1101. The laser light emitted by the light source 200 enters the optical fiber component 101 from the light input end 1101 and exits from the light output end 1102 after propagating through the optical fiber component 101. The optical fiber component 101 includes a plurality of cores 111 for transmitting laser light. The electron excitation layer 121 is disposed on the light output path of the laser light emitted from the cores 111 of the optical fiber component 101 so that the electron excitation layer 121 can emit an electron beam under the excitation of the laser light. In other words, the electron emission layer 120 is configured to be able to emit an electron beam outward from the light output end 1102 under the excitation of the laser light transmitted by the cores 111. The laser light propagates in the cores 111 and exits from the light output end 1102 onto the electron excitation layer 121, and the electron excitation layer 121 emits an electron beam under excitation.

[0095] It should be noted that the wavelength of the laser light can be a wavelength that enables electrons in the electron excitation layer 121 to absorb a photon and transition, for example, within the visible light-near infrared-ultraviolet range, or it can be a wavelength that enables electrons in the electron excitation layer 121 to absorb multiple photons and transition, for example, outside the visible light-near infrared-ultraviolet range. No specific limitation is made here.

[0096] The electron excitation layer 121 includes at least one of low-dimensional materials such as zero-dimensional materials, one-dimensional materials, and two-dimensional materials. These low-dimensional materials have atomic-level thickness, no dangling bonds, and stable properties, thus having characteristics such as good stability and high service life. Moreover, the low-dimensional materials can be directly integrated with the optical fiber, and the optical fiber can provide a stable excitation source with adjustable wavelength, polarization, and optical mode, and can be applied to different application scenarios. In addition, the stability of the electron beam emitted by the interaction between the laser and the low-dimensional material is higher. Compared with the ordinary electron excitation layer 121, the moving distance of electrons in the low-dimensional material is shorter, and it is not easily affected by the thickness of the electron excitation layer 121, thereby improving the controllability of the formed electron beam, further making the electron beam more stable and the detection quality higher. By using the low-dimensional material as the electron excitation layer 121 and setting it on the optical fiber assembly 101 to realize the excitation of electrons, the complex spatial light coupling structure set due to the introduction of external laser is abandoned, and the high-magnification microscope set to solve the alignment problem of the metal tip is also abandoned, which can reduce the process cost of the multi-beam fiber electron exposure machine 10 and improve the stability.

[0097] Compared with setting a metal layer on the optical fiber tip and directly interacting the laser transmitted in the optical fiber with the metal layer to excite electrons (during the process of electrons passing through the metal layer, they are easily affected by lattice scattering, resulting in low electron emission efficiency, wide energy dispersion, and serious heat accumulation), this application uses low-dimensional materials such as zero-dimensional materials, one-dimensional materials, or two-dimensional materials as the material of the electron excitation layer 121. The low-dimensional materials have atomic-level thickness, and the back-incident electrons can be emitted without passing through in-body transmission, with high electron emission efficiency. Moreover, the low-dimensional materials have no dangling bonds, stable properties, and high melting points, are not easily damaged, and can be applied to scenarios with high-power excitation, having characteristics such as good stability and high service life. In addition, the low-dimensional materials also have strong light-material interaction and rich electron band gaps, enabling the laser to better interact with the electron excitation layer 121 to excite the electrons in the electron excitation layer 121. These electrons are excited and detached into the vacuum to form an electron beam, and the electron beam tunneling and emitting from the electron excitation layer 121 has the characteristics of small energy dispersion, high brightness, and high stability.

[0098] In addition, the low-dimensional materials and the optical fiber assembly 101 can be directly integrated. The optical fiber assembly 101 transmits the laser and serves as the carrier of the low-dimensional materials, can provide a stable excitation source with adjustable wavelength, polarization, and optical mode, can be applied to different application scenarios, and does not require a complex optical path, having characteristics such as small volume and high integration.

[0099] Zero-dimensional materials refer to materials whose dimensions in the three spatial scale directions are in the nanoscale, such as nanoparticles, atomic clusters, and quantum dots, etc., which are generally composed of a small number of atoms and molecules. There are many zero-dimensional carbon nanomaterials, such as carbon black, nanodiamond, diamond color center, nanometer fullerene C 60or carbon-coated nano-metal particles, etc. Zero-dimensional materials have typical discrete energy levels. Under the action of laser excitation, electrons are mainly excited by tunneling from discrete energy levels, so that the electron beam tunneling and emitting from the electron excitation layer 121 has the characteristics of small energy dispersion, high brightness and high stability.

[0100] Electrons in one-dimensional materials can be transmitted along the linear chain of one-dimensional materials. Combining with the electron excitation layer 121 being disposed on the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 is conducive to the efficient emission of electrons emitted by the electron source 100 along the longitudinal extension direction of the optical fiber assembly 101. One-dimensional materials have the characteristics of a small curvature radius (nanoscale), can enhance the interaction between light and matter and provide a large field enhancement factor, ensure multi-photon emission, light field emission, etc., and are applied to scenarios where a high-brightness electron source 100 is required.

[0101] One-dimensional materials can be nanotubes, nanorods or nanowires, nanoribbons or coaxial nanocables, etc.

[0102] The nanotube can be a carbon nanotube. A carbon nanotube can be regarded as a seamless tubular structure formed by winding single-layer or multi-layer graphite according to certain rules. The nanotube can also be a silicon (Si) nanotube, a selenium (Se) nanotube, a tellurium (Te) nanotube, a bismuth (Bi) nanotube, a boron nitride (BN) nanotube, a boron and nitrogen co-doped carbon nanotube (BCN nanotube), a tungsten disulfide (WS2) nanotube, a molybdenum disulfide (MoS2) nanotube or a titanium dioxide (TiO2) nanotube, etc.

[0103] The material of the nanowire can be silicon (Si) or germanium (Ge); the nanowire can also be an oxide nanowire, such as tin oxide (SnO) or zinc oxide (ZnO), etc.; of course, the nanowire can also be a nitride nanowire, such as gallium nitride (GaN) or silicon nitride (Si3N4), etc.; the nanowire can also be a sulfide nanowire, such as cadmium sulfide (CdS) and zinc sulfide (ZnS), etc.; the nanowire can also be a ternary compound nanowire, such as barium titanate (BaTiO3) and lead titanate (PbTiO3), etc.

[0104] The nanoribbon is quite different from the above two nanoscale structures (nanotubes and nanowires). Its cross-section is different from the nearly circular shape of nanotubes or nanowires, but is quadrilateral, and its aspect ratio distribution range is generally from several to more than a dozen. The material of the nanoribbon can be an oxide, such as tin oxide (SnO) or zinc oxide (ZnO), etc.

[0105] The coaxial nanocable can be a graphite / boron nitride (C / BN) coaxial nanocable or a silicon carbide / sulfur dioxide (CSi / SiO2) coaxial nanocable, etc.

[0106] In some embodiments, the angle between the axial direction of the one-dimensional material in the electron excitation layer 121 and the emission direction of the emitted laser is 0 to 90°, for example, it can be 0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80° or 90°.

[0107] In some embodiments, the axial direction of the one-dimensional material is the same as the emission direction of the laser, so that point emission of the electron source 100 can be achieved, and the resolution is high. If a low-density arrangement of one-dimensional materials is adopted, the energy dispersion of the emitted electrons is low and the brightness is high. If a high-density arrangement of one-dimensional materials is adopted, a large electron beam of the electron source 100 can be achieved. Among them, low density refers to the number of one-dimensional materials per unit area. For example, a density less than 1 per nm 2 is low density, and greater than 1 per nm 2 is high density.

[0108] In some embodiments, there is an angle between the axial direction of the one-dimensional material and the emission direction of the laser, and the angle can be a right angle or an acute angle. Laser excitation of the one-dimensional material can generate a linear electron source.

[0109] Optionally, the electron excitation layer 121 may also include a two-dimensional material. The electrons in the two-dimensional material can be transmitted along the two-dimensional plane. Combined with the fact that the electron excitation layer 121 is provided on the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101, in this way, it is beneficial for the electrons emitted by the electron source 100 to be emitted efficiently along the longitudinal extension direction of the optical fiber assembly 101; and compared with setting a thinner metal layer on the optical fiber assembly 101, it will cause the melting point of the metal layer to decrease, and then lead to the problem that the metal layer is easily damaged. The two-dimensional material selected in this application has no dangling bonds, is relatively stable, has a high melting point, is not easily damaged, and is suitable for high-power excitation and large electron beams of the electron source 100. In addition, the energy levels of the two-dimensional material are more discrete, and the energy of the electron beam emitted by tunneling is more concentrated and the energy dispersion is smaller.

[0110] The two-dimensional material has the characteristic of including different atomic layer thicknesses. The thickness of the two-dimensional material can be the thickness of a single atomic layer or the thickness of multiple atomic layers. During the process of the laser acting on the two-dimensional material, it hardly affects the light transmission mode and has high stability; moreover, the excited electrons can be directly emitted without internal scattering in the material, ensuring the purity of the properties of the emitted electrons and an extremely narrow pulse width.

[0111] The two-dimensional material can be graphene, transition metal sulfide, two-dimensional perovskite, two-dimensional diamond or boron nitride, etc.

[0112] Taking two-dimensional material selected as graphene as an example for illustration, the carbon atoms of graphene are bonded in the plane in the form of covalent bonds to form a hexagonal honeycomb planar structure. The electron excitation layer 121 can have an atomic thickness of about 0.34 nanometers, or the electron excitation layer 121 can also have several or dozens of atomic thicknesses.

[0113] Of course, this application is not limited thereto, and the electron excitation layer 121 also includes two or more of zero-dimensional materials, one-dimensional materials and two-dimensional materials.

[0114] In some embodiments, the electron excitation layer 121 includes at least two two-dimensional materials stacked in sequence along the laser emission direction, or the electron excitation layer 121 includes at least two two-dimensional materials with different materials connected to each other on the same plane. In some embodiments, at least two two-dimensional materials are stacked, or at least two two-dimensional materials are spliced to form the same plane. Further, the materials of two adjacent two-dimensional materials are different, thereby forming a vertical heterojunction or a planar heterojunction. The heterojunction structure can enhance the interaction between light and two-dimensional materials, realize efficient electron emission under low laser power, and the heterojunction has the function of interfacial energy band regulation. Through material design and twist angle regulation, special interfacial states can be obtained to realize high-brightness and low-energy-dispersion electron emission.

[0115] In some embodiments, the materials in the electron excitation layer 121 include one-dimensional materials and zero-dimensional materials disposed at the ends and / or sides of the one-dimensional materials.

[0116] In this application, by combining zero-dimensional materials with one-dimensional materials and disposing the zero-dimensional materials at the ends or sides of the one-dimensional materials, that is, using zero-dimensional materials to modify the surface structure of one-dimensional materials. Both zero-dimensional materials and one-dimensional materials have typical discrete energy levels. Under the action of laser, electrons are mainly tunneling-excited from the discrete energy levels, and the emitted electrons have the characteristics of concentrated energy, small energy dispersion and high emission efficiency.

[0117] In some embodiments, the electron excitation layer 121 includes zero-dimensional materials and two-dimensional materials, and the zero-dimensional materials are disposed on the surface of the two-dimensional materials.

[0118] In this application, the zero-dimensional materials are disposed on the surface of the two-dimensional materials. The two-dimensional materials can not only serve as a support layer for carrying the zero-dimensional materials, but also avoid the addition of a conductive layer by using conductive two-dimensional materials, that is, the two-dimensional materials can serve as an auxiliary layer for the zero-dimensional materials to achieve the functions of support and conduction.

[0119] In some embodiments, the electron excitation layer 121 includes one-dimensional materials and two-dimensional materials, and the one-dimensional materials are disposed on the surface of the two-dimensional materials. Optionally, the angle between the axial direction of the one-dimensional materials and the surface of the two-dimensional materials is 0 to 90°.

[0120] In this application, a one-dimensional material is disposed on the surface of a two-dimensional material. The two-dimensional material can not only serve as a support layer for carrying the one-dimensional material, but also avoid the addition of a conductive layer by using a conductive two-dimensional material. That is, the two-dimensional material can serve as an auxiliary layer for the one-dimensional material, achieving the functions of support and conduction.

[0121] In some embodiments, the thickness of the electron excitation layer 121 is less than or equal to 50 nm.

[0122] It can be understood that the thickness of the electron excitation layer 121 is in the nanometer range and the thickness of the electron excitation layer 121 is small. Thus, it is more beneficial to reduce the process of in-body transmission of the excited electrons in the electron excitation layer 121, more beneficial to improve the electron emission efficiency and emission density, and then an electron beam with ultra-short pulses can be realized by using this electron source 100.

[0123] In some embodiments, the zero-dimensional material, one-dimensional material or two-dimensional material independently includes a doping element respectively.

[0124] In this application, by doping elements into the low-dimensional material, the conductivity of the low-dimensional material is improved, the work function is changed, and the electron emission performance is adjusted. For example, alkali metals and alkaline earth metal elements can improve the conductivity of the low-dimensional material and reduce the work function of the low-dimensional material to increase the emission beam current. Elements such as B, C, N, O, F and rare earths can create discrete energy levels to obtain an electron beam with a narrow energy range.

[0125] Optionally, the doping element includes at least one of alkali metals, alkaline earth metals, transition metals, rare earth elements, halogen elements and light elements (B, C, N, O, F).

[0126] Continue to refer to Figure 1 As shown, the electron source 100 further includes an optical modulator 500. One end of the optical modulator 500 is connected to the light source 200, and the other end of the optical modulator 500 is respectively connected to a plurality of cores 111 of the optical fiber assembly 101, for respectively controlling whether the laser in each core 111 propagates. In some embodiments, the optical modulator 500 includes one of a spatial light modulator, an optical switch and an electro-optic modulator. The optical switch can control whether the laser emitted by the light source 200 propagates into each core 111 of the optical fiber assembly 101. The electro-optic modulator and the spatial light modulator can, while controlling whether the laser emitted by the light source 200 propagates into each core 111 of the optical fiber assembly 101, adjust the phase of the laser emitted by the light source 200, etc. That is, the optical modulator 500 is used to control whether the laser emitted by the light source 200 respectively propagates into the corresponding core 111 to respectively control whether light is transmitted in each core 111.

[0127] Since the electron beam is controlled by controlling the laser through the optical modulator 500, there is no need to set an electron beam shutter to modulate the electron beam. Moreover, an existing electron microscope can be modified to form the electron exposure machine 10 of the present application. During the modification, since the electron beam can be controlled through the optical modulator 500, there is no need to consider the influence of adding an electron beam shutter structure and the corresponding electric and magnetic field distributions and wiring problems. After using the electron source 100 of the present application, an optical modulator 500 can be directly added to an external optical path, such as an optical fiber assembly 101, to complete the hardware modification of the electron exposure function.

[0128] Refer to Figure 1 As shown, the multi-beam fiber optic electron exposure machine 10 further includes an electron optical assembly 600. The electron optical assembly 600 is disposed on the electron beam output side of the electron source 100. The electron optical assembly 600 is used to adjust the focusing and deflection directions of the multi-beam electron beams so that the multi-beam electron beams are incident on the sample 410. Combining Figure 3 As shown, it can be regarded as an array structure that divides the sample 410 into multiple regions. The electron optical assembly 600 focuses the multi-beam electron beams onto the corresponding regions respectively, and the multi-beam electron beams expose the corresponding regions simultaneously, thereby improving the exposure efficiency of the entire sample 410. In some embodiments, the electron optical assembly 600 includes a focusing magnetic lens 610 and a deflection coil 620. The focusing magnetic lens 610 and the deflection coil 620 are arranged at intervals along the electron beam output direction on the electron beam output side of the electron source 100, and are mainly used to modulate the deflection direction of the electron beam so that it can be projected onto different regions of the sample 410.

[0129] Refer to Figure 4 As shown, Figure 4 The figure shows a schematic structural diagram of an embodiment in which the cores 111 in the optical fiber assembly 101 of the present application are arranged in an array. Combining and referring to Figure 2 As shown, Figure 4The optical fiber component 101 in the described embodiment includes a plurality of optical fibers 110 arranged in an array. An electron excitation layer 121 is provided on the end face of one end of the emitted laser of each optical fiber 110, so that the electron excitation layer 121 is located on the light-emitting path of the laser emitted from the core 111 of the corresponding optical fiber 110. In other words, in some embodiments, the optical fiber component 101 can be arranged in the form of an array of optical fibers. The array of optical fibers includes a plurality of optical fibers 110. One end of the optical fiber 110 is connected to the optical modulation member 500, and the other end of the optical fiber is covered with the electron excitation layer 121. The optical modulation member 500 is respectively connected to a plurality of optical fibers 110 in the array of optical fibers to control the propagation of the laser in each optical fiber 110 respectively, or to control whether light passes through the core 111 of each optical fiber 110. It can be understood that the optical modulation member 500 controls the passage of light through a plurality of cores 111 at the same time, excites the electron excitation layer 121 to form multiple electron beams, and then the electron optical component 600 controls the multiple electron beams to be respectively focused on different regions of the sample 410, and the multiple electron beams expose the corresponding regions at the same time, that is, dot matrix exposure is realized, thereby improving the exposure efficiency of the entire sample 410.

[0130] The present application has various embodiments for the setting manners of the optical fiber component 101 and the electron excitation layer 121.

[0131] Referring to Figure 6 As shown, in some embodiments, the end face 11021 of the light-emitting end 1102 of the optical fiber component 101 is arranged at an angle α with the extending direction of the core 111, and the angle α is selected between 0 and 90 degrees. The electron emission layer 120 is provided on the end face 11021 of the light-emitting end 1102 of the optical fiber component 101, and the electron excitation layer 121 covers the core 111 of the optical fiber component 101. The laser emitted from the core 111 can directly irradiate the electron emission layer 120, so that the electron excitation layer 121 is excited by the laser emitted from the core 111 and emits electrons.

[0132] It can be understood that the electron excitation layer 121 is located on the light-emitting path of the laser emitted from the core 111.

[0133] Since the end face 11021 of the light-emitting end 1102 is arranged at an angle with the longitudinal extension direction of the optical fiber component 101, in this way, oblique incidence on the electron excitation layer 121 can be realized, and an optical electric field perpendicular to the end face 11021 of the light-emitting end 1102 can be realized. The emission angle of electrons can be changed by changing the tilt angle of the end face 11021 of the light-emitting end 1102, or the emission angle of electrons can be adjusted by adjusting the polarization state of the laser in the core 111 of the optical fiber component 101, so as to improve the adjustment convenience of the electron beam in the multi-fiber electron exposure machine 10, and is beneficial to broadening the application range of the electron source 100.

[0134] Referring to Figure 7 andFigure 8 As shown, in some embodiments, the optical fiber assembly 101 includes a plurality of cladding layers 112 corresponding one-to-one to the core 111. The cladding layers 112 are correspondingly wrapped around the core 111 to form corresponding optical fibers 110 with the core 111. A light leakage notch h is formed in the light-emitting end 1102 of the optical fiber 110 along the radial direction of the optical fiber 110. The electron excitation layer 121 is disposed on the bottom wall surface h1 of the light leakage notch h, and the bottom wall surface h1 of the light leakage notch h is configured as a plane. The projection of the electron excitation layer 121 on the bottom wall surface h1 covers the projection of the core 111 on the bottom wall surface h1. The electron excitation layer 121 also extends to the light-emitting end 1102 of the optical fiber 110.

[0135] Optionally, the light leakage notch h further has a side wall surface h2 extending along the radial direction of the optical fiber 110. The bottom wall surface h1 and the side wall surface h2 together define the light leakage notch h.

[0136] Optionally, the bottom wall surface h1 of the light leakage notch h is configured as a plane, and the bottom wall surface h1 of the light leakage notch h extends along the extending direction of the optical fiber 110.

[0137] It can be that the bottom wall surface h1 of the light leakage notch h is spaced from the core 111, and the bottom wall surface h1 of the light leakage notch h is parallel to the tangent plane of the outer surface of the core 111; it can also be that the bottom wall surface h1 of the light leakage notch h is tangent to the outer surface of the core 111 (as Figure 8 shown); of course, it can also be that the bottom wall surface h1 of the light leakage notch h is configured as a plane partially formed on the core 111. For example, by cutting the core 111 and the cladding layer 112 simultaneously to form the light leakage notch h, and making a part of the bottom wall surface h1 of the light leakage notch h be formed on the core 111, and the other part of the bottom wall surface h1 of the light leakage notch h be formed on the cladding layer 112.

[0138] In this way, the laser transmitted in the core 111 of the optical fiber 110 can generate an evanescent wave at the bottom wall surface h1 of the light leakage notch h. And since the electron excitation layer 121 is disposed on the bottom wall surface h1 of the light leakage notch h, and the projection of the electron excitation layer 121 in the plane parallel to the bottom wall surface h1 covers the projection of the core 111 in the bottom wall surface h1, therefore, the laser transmitted in the core 111 of the optical fiber 110 can interact with the electron excitation layer 121 through the evanescent wave, so that the electrons in the electron excitation layer 121 absorb the energy of the evanescent wave and transition. These electrons can escape outside the electron excitation layer 121, and thus the excitation of electrons can be realized.

[0139] Refer to Figure 9 and Figure 10As shown, in some embodiments, the optical fiber assembly 101 is configured to include a plurality of perforated optical fibers. The perforated optical fibers have light guiding holes. The perforated optical fibers may include hollow perforated optical fibers, and the hollow perforated optical fibers may be single-hole or multi-hole hollow optical fibers. Of course, the perforated optical fibers may also include solid-core perforated optical fibers, and the solid-core perforated optical fibers may be single-hole or multi-hole solid-core optical fibers, which are not specifically limited herein.

[0140] A core 111 composed of air is provided in the light guiding hole. The perforated optical fiber further includes a cladding 112 surrounding the core 111. In some embodiments, the cladding 112 is an annular light guiding tube body, and the side wall k of the light guiding hole is formed on the inner side wall of the annular light guiding tube body. Specifically, the material of the annular light guiding tube body may be borosilicate, glass or quartz, etc. More specifically, the perforated optical fiber is a capillary optical fiber.

[0141] The electron excitation layer 121 may be provided at least on the side wall k of the light guiding holes of different optical fibers, and the electron excitation layer 121 extends along the extending direction of the light guiding hole to the light emitting end 1102 of the optical fiber 110.

[0142] It can be understood that the laser can be transmitted in the light guiding hole of the optical fiber assembly 101 by means of the light guiding medium, and an evanescent wave is generated at the side wall k of the light guiding hole. Since the electron excitation layer 121 is provided on the side wall k of the light guiding hole, the laser can interact with the electron excitation layer 121 through the evanescent wave, so that the electrons in the electron excitation layer 121 absorb the energy of the evanescent wave and transition. These electrons can escape outside the electron excitation layer 121, and thus the excitation of electrons can be realized.

[0143] Refer to Figure 11 and Figure 12 As shown, in some embodiments, the optical fiber 110 includes a perforated optical fiber. The perforated optical fiber has a light guiding hole. The perforated optical fiber may include a hollow perforated optical fiber, and the hollow perforated optical fiber may be a single-hole or multi-hole hollow optical fiber. Of course, the perforated optical fiber may also include a solid-core perforated optical fiber, and the solid-core perforated optical fiber may be a single-hole or multi-hole solid-core optical fiber, which is not specifically limited herein.

[0144] A core 111 composed of air is provided in the light guiding hole. The perforated optical fiber further includes a cladding 112 surrounding the core 111. In some embodiments, the cladding 112 is an annular light guiding tube body, and the side wall k of the light guiding hole is formed on the inner side wall of the annular light guiding tube body. Specifically, the material of the annular light guiding tube body may be borosilicate, glass or quartz, etc. More specifically, the perforated optical fiber is a capillary optical fiber.

[0145] The electron emission layer 120 is disposed on the end face 11021 of the light output end 1102 of the optical fiber assembly 101, and the electron excitation layer 121 covers one end of the light guiding hole located at the end face 11021 of the light output end 1102. The laser emitted from the holey optical fiber can directly irradiate on the electron emission layer 120, so that the electron excitation layer 121 is excited by the laser emitted from the holey optical fiber and emits electrons.

[0146] It can be understood that the end face of one end of the laser emitted from the holey optical fiber coincides with the end face 11021 of the light output end 1102 of the optical fiber assembly 101.

[0147] Exemplarily, the holey optical fiber is a capillary optical fiber, and the electron excitation layer 121 covers the core 111 of the holey optical fiber. It can be that the electron excitation layer 121 directly covers the core 111 of the holey optical fiber, or it can be that the electron excitation layer 121 indirectly covers the core 111 of the holey optical fiber, and no specific limitation is made here.

[0148] In this way, during the process that the laser transmitted in the core 111 propagates to the end face 11021 of the light output end 1102 and exits, this part of the laser can interact with the electron excitation layer 121, so that the electrons in the electron excitation layer 121 absorb the photons of the laser, and undergo energy transition to escape outside the electron excitation layer 121, realizing the excitation of electrons.

[0149] Refer to Figure 13 and Figure 14 As shown, in some embodiments, a pointed end portion j is provided at one end of the optical fiber 110 from which the laser exits. The end face of one end of the optical fiber 110 from which the laser exits coincides with the end face 11021 of the light output end 1102 of the optical fiber assembly 101. In other words, a plurality of pointed end portions j are provided at the light output end 1102 of the optical fiber assembly 101. The electron excitation layer 121 covers the surface j1 of the corresponding pointed end portion j, and the electron excitation layer 121 is located on the light output path of the core 111. The laser emitted from the core 111 can directly irradiate on the electron emission layer 120, so that the electron excitation layer 121 is excited by the laser emitted from the core 111 and emits electrons.

[0150] During the process that the laser transmitted in the core 111 of the optical fiber 110 transmits to the pointed end portion j and exits, this part of the laser can interact with the electron excitation layer 121, so that the electrons in the electron excitation layer 121 absorb the photons of the laser, and undergo energy transition to escape outside the electron excitation layer 121, and thus the excitation of electrons can be realized.

[0151] Optionally, along the extending direction of the core 111, the radial dimension of the pointed end portion j gradually decreases.

[0152] The electron excitation layer 121 of the present application is provided at the tip j of the optical fiber 110 and covers the surface j1 of the tip j of the optical fiber 110. Since the tip j of the optical fiber 110 has a geometric structure similar to that of a needle tip, the field emission enhancement factor is improved, and a higher-brightness electron source 100 can be obtained. The setting of the tip j can increase the light-emitting area of the core 111. Combining with the low-dimensional material having no dangling bonds, stable properties, high melting point, and not being easily damaged, it can be applied to the scenario of high-power excitation, has the characteristics of good stability and high service life, and can realize high-power excitation of electron beams.

[0153] Optionally, in this embodiment, along the extending direction of the core 111, the size of the tip j is L1, and the size of the electron excitation layer 121 is L2, where L1 is greater than L2. Specifically, the sizes of the tip j and the electron excitation layer 121 satisfy the following relationship: L2 > 1 / 2 * L1.

[0154] The electron excitation layer 121 covers the surface j1 of the tip j, and the electron excitation layer 121 is disposed around the tip j. Since L2 > 1 / 2 * L1, in this way, the contact area between the electron excitation layer 121 and the surface j1 of the tip j can be increased, the bonding strength between the electron excitation layer 121 and the optical fiber 110 can be improved, and it is also beneficial to use the laser transmitted by the core 111 to excite the electron excitation layer 121 to emit electrons outward.

[0155] In some embodiments, the electron source 100 further includes a conductive connection layer 130. The conductive connection layer 130 is at least disposed on the optical fiber assembly 101 and is electrically connected to the electron excitation layer 121.

[0156] The conductive connection layer 130 is at least partially disposed on the cladding layer 112. The conductive connection layer 130 can be a conductive thin film. Specifically, the conductive connection layer 130 can be a metal thin film, a graphite thin film, or a low-dimensional material thin film, etc. It should be supplemented that the conductive connection layer 130 is not disposed on the light-emitting path of the laser emitted from the core 111.

[0157] The electron excitation layer 121 can be electrically connected to the negative electrode of a power supply through the conductive connection layer 130. On the one hand, the power supply can be used to supplement electrons to the electron excitation layer 121, which is beneficial for the electron excitation layer 121 to continuously emit electrons under the excitation of the laser. On the other hand, the direction and convergence of the electrons emitted from the electron excitation layer 121 can be regulated by the voltage applied to the conductive connection layer 130 by the power supply.

[0158] Optionally, the electron excitation layer 121 includes a first portion 1211 located on the light output path of the laser emitted from the core 111, and a second portion 1212 connected to the periphery of the first portion 1211, and the second portion 1212 is electrically connected to the conductive connection layer 130. Among them, the second portion 1212 can be directly in electrical contact with the conductive connection layer 130 to be electrically connected to the conductive connection layer 130; the second portion 1212 can also be electrically connected to the conductive connection layer 130 through other conductive structures.

[0159] Specifically, in the embodiments such as Figure 6 shown, the first portion 1211 and the second portion 1212 are provided on the end face 11021 of the light output end 1102. The first portion 1211 covers the core 111 of the optical fiber 110, and the second portion 1212 is disposed around the first portion 1211 and is electrically connected to the conductive connection layer 130.

[0160] The first portion 1211 can directly cover the core 111 of the optical fiber 110, or the first portion 1211 can indirectly cover the core 111 of the optical fiber 110, and no specific limitation is made here.

[0161] Specifically, in the embodiments such as Figure 7 and Figure 8 shown, the first portion 1211 and the second portion 1212 are provided on the bottom wall surface h1 of the light leakage notch h. The projection of the first portion 1211 on the bottom wall surface h1 covers the projection of the core 111 on the bottom wall surface h1. The second portion 1212 is located on the periphery of the first portion 1211 and is electrically connected to the conductive connection layer 130.

[0162] Specifically, in the embodiments such as Figure 9 and Figure 10 shown, the electron excitation layer 121 includes a first portion 1211 that completely covers the side wall k of the light guiding hole, and a second portion 1212 provided on the end face 11021 of the light output end 1102 of the fiber with holes. The first portion 1211 is connected to the second portion 1212, and the second portion 1212 is electrically connected to the conductive connection layer 130.

[0163] Specifically, in the embodiments such as Figure 11 and Figure 12 shown, the electron excitation layer 121 includes a first portion 1211 and a second portion 1212 that are provided on the end face 11021 of the light output end 1102 and are connected to each other. The first portion 1211 covers one end of the light guiding hole located on the end face 11021 of the light output end 1102. The second portion 1212 is disposed around the first portion 1211 and is electrically connected to the conductive connection layer 130.

[0164] Specifically, in the embodiments such as Figure 13 and Figure 14In the illustrated embodiment, the electron excitation layer 121 includes a first portion 1211 and a second portion 1212 connected to each other, wherein the projection of the first portion 1211 in a target plane perpendicular to the extension direction of the fiber core 111 covers the projection of the fiber core 111 in the target plane. The projection of the second portion 1212 in the target plane is located at the periphery of the projection of the first portion 1211 in the target plane, and the second portion 1212 overlaps the conductive connection layer 130.

[0165] In this way, the conductive connection layer 130 is electrically connected to the second part 1212 of the electron excitation layer 121, and the second part 1212 is located outside the first part 1211, so that the conductive connection layer 130 can replenish electrons to the electron excitation layer 121 without affecting the interaction between the fiber core 111 and the electron excitation layer 121, which is conducive to the electron excitation layer 121 to continuously emit electrons under the excitation of the laser.

[0166] Optionally, the conductive connection layer 130 includes a first conductive portion 131 disposed on the light output end 1102 and a second conductive portion 132 disposed on the outer peripheral surface of the optical fiber 110 , the first conductive portion 131 is connected to the second conductive portion 132 , and the first conductive portion 131 overlaps with the second portion 1212 of the electron excitation layer 121 .

[0167] Specific to Figure 6 , Figures 11 - 12 In the embodiment shown, the first conductive portion 131 is disposed on the end surface 11021 of the light emitting end 1102 and overlaps with the second portion 1212 of the electron excitation layer 121. Figure 7 and Figure 8 In the embodiment shown, the first conductive portion 131 is disposed on the bottom wall surface h1 of the light leakage gap h and overlaps with the second portion 1212 of the electron excitation layer 121. The first conductive portion 131 also extends to the light output end 1102. Figure 13 and Figure 14 In the illustrated embodiment, the first conductive portion 131 is disposed on the tip portion j on the light emitting end 1102 and overlaps with the second portion 1212 of the electron excitation layer 121 .

[0168] In this way, the conductive connection layer 130 can cover more of the optical fiber 110 , thereby improving the bonding strength between the conductive connection layer 130 and the optical fiber 110 , and also facilitating better use of the conductive connection layer 130 to supplement electrons to the electron excitation layer 121 .

[0169] Optionally, the conductive connection layer 130 includes a first metal layer and a second metal layer which are stacked, the adhesion of the first metal layer is greater than that of the second metal layer, and the corrosion resistance of the first metal layer is less than that of the second metal layer.

[0170] For example, the first metal layer is made of titanium, and the second metal layer is made of gold.

[0171] In this way, the first metal layer with higher adhesion can make the conductive connection layer 130 better adhere to the optical fiber 110, and the second metal layer with better corrosion resistance can protect the first metal layer, thereby improving the bonding strength between the conductive connection layer 130 and the optical fiber 110, which is also beneficial to improving the service life of the conductive connection layer 130.

[0172] In some embodiments, the electron emission layer 120 further includes an auxiliary layer 122 , which is stacked on a side of the electron excitation layer 121 close to the optical fiber 110 , or stacked on a side of the electron excitation layer 121 away from the optical fiber 110 .

[0173] The auxiliary layer 122 may be stacked on a side of the electron excitation layer 121 close to the end face 11021 of the light output end 1102 of the optical fiber 110 , or may be stacked on a side of the electron excitation layer 121 away from the end face 11021 of the light output end 1102 of the optical fiber 110 .

[0174] Of course, the auxiliary layer 122 may also be stacked on a side of the electron excitation layer 121 close to or far from the bottom wall surface h1 of the light leakage gap h.

[0175] Of course, the auxiliary layer 122 may also be stacked on a side of the electron excitation layer 121 close to or away from the surface j1 of the tip j of the optical fiber 110 .

[0176] Figure 11 , Figure 12 and Figure 15 An example is given in which the auxiliary layer 122 is stacked on one side of the end surface 11021 of the electron excitation layer 121 close to the light output end 1102 .

[0177] In the present application, an auxiliary layer 122 is additionally provided. When the electron excitation layer 121 requires structural support, the auxiliary layer 122 is used to provide structural support for the electron excitation layer 121, that is, the electron excitation layer 121 is provided on the auxiliary layer 122; or, when the electron excitation layer 121 cannot be directly connected to the conductive connection layer 130 for conduction, the conductive auxiliary layer 122 is used to connect the conductive connection layer 130, and the auxiliary layer 122 is used to achieve electronic conduction between the electron excitation layer 121 and the conductive connection layer 130.

[0178] Optionally, the auxiliary layer 122 includes at least one of a conductive support layer and a heat dissipation support layer.

[0179] Optionally, the auxiliary layer 122 has a thickness of 0.1 nm to 100 nm.

[0180] Optionally, the light transmittance of the auxiliary layer 122 is 10% or more, such as 15%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90% or 100%.

[0181] Optionally, the auxiliary layer 122 includes a conductive support layer, and the conductive support layer is electrically connected to the conductive connection layer 130.

[0182] In some embodiments, the auxiliary layer 122 includes a conductive support layer, the material of the conductive support layer includes a conductive metal, the laser wavelength in the optical fiber 110 is 200 nm to 10 μm, the pulse power is 1 nw to 1 w, and the repetition frequency is 0 Hz to 10 GHz.

[0183] In this application, the auxiliary layer 122 uses a conductive metal and controls the laser parameters, thereby avoiding the problem of melting caused by laser irradiation of the conductive metal and ensuring that the auxiliary layer has the functions of support and conduction.

[0184] The auxiliary layer 122 may also include a conductive support layer, such as Figure 11 and Figure 12 As shown, the electron excitation layer 121 is disposed on the end face 11021 of the light output end 1102 through the auxiliary layer 122, and the auxiliary layer 122 has a bearing plane for bearing the electron excitation layer 121. The auxiliary layer 122 may be a light-transmitting material; the auxiliary layer 122 may also be a non-light-transmitting material, and the auxiliary layer 122 has an annular structure, and the orthographic projection of the auxiliary layer 122 on the end face 11021 of the light output end 1102 is located outside the core 111 of the optical fiber 110.

[0185] In this way, the bearing plane of the auxiliary layer 122 can be used to make the electron excitation layer 121 more flatly disposed on the end face 11021 of the light output end 1102, and the interaction between the electron excitation layer 121 and the core 111 of the optical fiber 110 is not affected, which is beneficial to the formation of an electron beam with concentrated energy and small energy dispersion from the electrons tunneling and emitting within the electron excitation layer 121.

[0186] The auxiliary layer 122 may also include a heat dissipation support layer. Exemplarily, the material of the auxiliary layer 122 may be hexagonal boron nitride. Of course, the material of the auxiliary layer 122 may also be other materials that can dissipate heat for the electron excitation layer 121 and enable the electron excitation layer 121 to be flatly disposed on the end face 11021 of the light output end 1102. In this way, the heat dissipation efficiency of the electron excitation layer 121 can be increased by using the auxiliary layer 122, so that the electron excitation layer 121 can emit a larger electron beam current.

[0187] Refer to Figure 5 As shown, in Figure 5In the illustrated embodiment, the optical fiber assembly 101 includes a plurality of cores 111 and a cladding layer 112 that wraps around the plurality of cores 111. The plurality of cores 111 are parallel to each other radially, and the plurality of cores 111 are closely arranged along the axial direction of the cores 111 to form a pixel optical fiber. In other words, the optical fiber assembly 101 of the present application can adopt the setting of a pixel optical fiber. The electron excitation layer 121 is disposed on the light output end 1102 of the optical fiber assembly 101 so that the electron excitation layer 121 is located on the light output path of the laser beams emitted from the plurality of cores 111, that is, one end of the pixel optical fiber is connected to the light modulation member 500, and the other end of the pixel optical fiber is covered with the electron excitation layer 121. By controlling the light passing through the plurality of cores 111 in the optical fiber assembly 101 simultaneously through the light modulation member 500, a plurality of electron beams are excited in the electron excitation layer 121, and then the plurality of electron beams are respectively focused on different regions of the sample 410 by the electron optical assembly 600, and the plurality of electron beams simultaneously expose the corresponding regions, that is, dot matrix exposure is achieved, thereby improving the exposure efficiency of the entire sample 410.

[0188] By modulating whether the light passes through the plurality of cores 111 in the pixel optical fiber through the light modulation member 500, patterned exposure can also be achieved. It can be understood that the light modulation member 500 controls the corresponding cores 111 in the optical fiber assembly 101 to be in a light-passing or non-light-passing state, so that the laser beams emitted from the optical fiber assembly 101 can form corresponding spot shapes, and the axial pattern of the electron beams excited on the electron excitation layer 121 by the laser irradiation will also change correspondingly. The electron beams are then modulated by the electron optical assembly 600 and irradiated on the sample 410 to finally form a corresponding exposure pattern, thereby achieving patterned exposure. The above setting can directly form an exposure pattern without the need for a single electron beam to expose the required exposure pattern for a long time, relatively improving the exposure efficiency. And combined with the setting of the electron source 100 of the present application, the accuracy of the exposure pattern can be relatively improved.

[0189] The cores in the pixel optical fiber are arranged more closely, so it can be considered that the electron beams excited by the light of each core in the pixel optical fiber cooperate with each other and finally focus into a closed figure. Therefore, by controlling whether each core passes light, a patterned setting can be achieved, and then a complete figure can be scanned with electron beams of different shapes.

[0190] In Figure 5In the illustrated embodiment, that is, in the embodiment of the pixel optical fiber, the electron excitation layer 121 may be disposed on the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101, and the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 is disposed at an angle with respect to the extending direction of the fiber core 111. The laser emitted from the fiber core 111 can directly irradiate the electron emission layer 120, so that the electron excitation layer 121 is excited by the laser emitted from the fiber core 111 and emits electrons. In other words, for the pixel optical fiber, the end face 11021 of its light-emitting end 1102 can also be set to be inclined with respect to the extending direction of the fiber core 111, or at an angle. In this way, the oblique incidence on the electron excitation layer 121 can be realized, and the photoelectric field perpendicular to the end face 11021 of the light-emitting end 1102 can be realized. In some embodiments, the included angle range between the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 and the extending direction of the fiber core 111 is 0-90°. When the included angle is 90°, the laser propagated in the optical fiber assembly 101 perpendicularly exits the end face 11021 of the light-emitting end 1102. Thus, the emission angle of electrons can be changed by changing the inclination angle of the end face 11021 of the light-emitting end 1102, and the emission angle of electrons can also be adjusted by adjusting the polarization state of the laser in the fiber core 111 of the optical fiber assembly 101, so as to improve the adjustment convenience of the electron beam in the multi-beam fiber electron exposure machine 10, and is beneficial to broadening the application range of the electron source 100.

[0191] Referring to Figure 5 In the illustrated embodiment, that is, in the embodiment of the pixel optical fiber, in some embodiments, a pointed end portion j is provided at one end of the optical fiber assembly 101 that emits laser. The electron excitation layer 121 covers the surface j1 of the pointed end portion j of the optical fiber assembly 101. The laser emitted from the fiber core 111 of the optical fiber assembly 101 can directly irradiate the electron emission layer 120, so that the electron excitation layer 121 is excited by the laser emitted from the fiber core 111 and emits electrons. That is to say, one end of the pixel optical fiber that emits laser can also be set in the form of a tip. It can be understood that the electron excitation layer 121 is located on the light-emitting path of the fiber core 111 to facilitate receiving the laser emitted from the fiber core 111. The pointed end portion j has a geometric structure similar to that of a needle tip, which improves the field emission enhancement factor, can obtain an electron source 100 with higher brightness, and relatively increases the light-emitting area of the fiber core 111, facilitating the realization of high-power excitation of the electron beam.

[0192] In some embodiments, the electron source 100 further includes an anode and a grid. A preset electric field is provided between the anode and the electron excitation layer 121. The electron beam can be incident on the sample 410 under the drive of the preset electric field. That is to say, the electron excitation layer 121 emits an electron beam under the excitation of a laser, forming a cathode opposite to the anode. Electrons can move towards the sample 410 under the action of the electric field between the anode and the electron excitation layer 121. The grid cooperates with the electron source 100 and the anode to form a fiber optic electron gun, and the grid can be used to control the direction of the electron beam. The combined electron optical component 600 is disposed on one side of the electron source 100 where the electron beam exits, and is used to adjust the focusing and deflection direction of the electron beam, so that the electron beam emitted from the electron excitation layer 121 can be incident on the sample 410 for exposure. In some embodiments, the anode has a first electron channel, and the electron optical component 600 has a second electron channel communicating with the first electron channel, so that the electron beam can pass through the first electron channel and the second electron channel under the drive of the preset electric field and be incident on the sample 410. That is, the electron beam is driven by the electric field to pass through the first electron channel and is regulated by the electron optical component 600 when passing through the second electron channel, and the deflection direction of the electron beam changes and finally is incident on the sample 410. It can be understood that the anode can be set as a hollow ring, and the middle of the ring-shaped anode is the first electron channel for the electron beam to pass through. Thus, the anode can cooperate with the electron excitation layer 121 to form an electric field for driving the electron beam and does not affect the passage of the electron beam.

[0193] In some embodiments, the electron exposure machine 10 further includes a sample stage 400. The sample stage 400 is disposed on the side of the electron optical component 600 away from the electron source 100 along the propagation direction of the electron beam and is used to carry the sample 410. In some embodiments, a Faraday cup is further provided on the sample stage 400 to measure the beam current of the electron beam, that is, to measure the intensity of the electron beam incident on the sample 410, so as to regulate the electron beam and control the exposure effect.

[0194] In some embodiments, the electron exposure machine 10 further includes a housing 300 having a vacuum chamber 310. The light-emitting end 1102 of the optical fiber assembly 101 of the electron source 100, the electron optical assembly 600, and the sample stage 400 are sequentially arranged at intervals in the vacuum chamber 310. The electron excitation layer 121 is disposed on the light-emitting end 1102 of the optical fiber 110 to be located on the light-emitting path of the laser emitted from the core 111, so that the electron source 100 emits an electron beam into the vacuum chamber 310. In other words, the electron source 100 penetrates through one end of the housing 300 along its longitudinal direction. An opening communicating with the vacuum chamber 310 is provided on the housing 300. The light-incident end 1101 of the optical fiber assembly 101 of the electron source 100 is exposed through the opening and is coupled to the light source 200. And the outer peripheral wall of the optical fiber is hermetically connected to the inner side wall of the opening, thereby ensuring the airtightness of the cavity and improving the overall quality of the cavity. This application can modify the existing electron microscope. When modifying, only the electron source 100 needs to be replaced to realize the output of the electron beam, and there is no need to open an optical window on the housing 300 near the electron source 100, and there is no need to damage the cavity of the existing electron exposure machine. That is, the modification is simple, the modification cost is low, and the detection effect after modification is good.

[0195] When the electron source 100 of this application is in use, the laser can be transmitted along multiple cores 111 of the optical fiber assembly 101, so that the laser transmitted in the core 111 can propagate to the end face 11021 of the light-emitting end 1102 and be emitted, and interact with the electron excitation layer 121, so that the electrons in the electron excitation layer 121 absorb the photons of the laser and undergo energy transition to escape outside the electron excitation layer 121, realizing the excitation of electrons. This electron source 100 realizes the excitation of electrons by disposing the electron excitation layer 121 on the optical fiber assembly 101, and abandons the complex spatial light coupling structure set due to the introduction of external laser, which can reduce the process cost of the electron source 100; in addition, the electron source 100 of this application uses a low-dimensional material including at least one of zero-dimensional materials, one-dimensional materials, and two-dimensional materials as the material for emitting electrons. Since the electron excitation layer 121 has strong light-material interaction and rich electron band gaps, the laser can better interact with the electron excitation layer 121 to excite the electrons in the electron excitation layer 121, and the electrons tunneling and emitting from the electron excitation layer 121 have the characteristics of small energy dispersion, high brightness, and high stability.

[0196] It may be, such as Figures 1 - 2As shown, the light input end 1101 of the optical fiber component 101 extends to the outside of the vacuum chamber 310 through the opening, so that the optical fiber component 101 is coupled to the light source 200. Of course, it is also possible that the end face of the light input end 1101 of the optical fiber component 101 is flush with the plane where the opening is located. In this way, the optical fiber component 101 can be roughly encapsulated in the housing 300, and the end face of the light input end 1101 of the optical fiber component 101 is exposed through the opening, so that the light source 200 can be coupled to the light input end 1101 of the optical fiber component 101. While better protecting the optical fiber component 101, it is also convenient for the laser emitted by the light source 200 to be transmitted through the optical fiber component 101.

[0197] When the electron source 100 of the present application is in use, the laser can be transmitted along the core 111 of the optical fiber component 101, so that the laser transmitted in the core 111 can propagate to the end face 11021 of the light output end 1102 and exit, and interact with the electron excitation layer 121, so that the electrons in the electron excitation layer 121 absorb the photons of the laser and undergo an energy transition to escape outside the electron excitation layer 121, realizing the excitation of electrons. The electron source 100 realizes the excitation of electrons by arranging the electron excitation layer 121 on the optical fiber component 101, and abandons the complex spatial light coupling structure set due to the introduction of external laser, which can reduce the process cost of the electron source 100; in addition, the electron source 100 of the present application uses low-dimensional materials as the materials for emitting electrons. Since the electron excitation layer 121 has a high optical nonlinear effect and a rich electron band gap, the laser can better interact with the electron excitation layer 121 to excite the electrons in the electron excitation layer 121, and the electrons tunneling and emitting from the electron excitation layer 121 have the characteristics of small energy dispersion, high brightness and high stability.

[0198] The electron source 100 of the present application can be prepared through the following steps:

[0199] S210. Provide the optical fiber component 101. Among them, the optical fiber component 101 includes a plurality of cores 111 for transmitting laser.

[0200] Optionally, an appropriate length of array optical fiber or pixel optical fiber can be intercepted, the end coating layer of the array optical fiber or pixel optical fiber is removed, and one end of the array optical fiber or pixel optical fiber is cut to form the light output end 1102, thereby forming the optical fiber component 101. Specifically, a cutting mechanism can be used to cut one end of the optical fiber component 101 to form the light output end 1102. By using the cutting method to form the light output end 1102, the cross section where the end face 11021 of the light output end 1102 is located can be made relatively flat, which is beneficial to forming a flat electron excitation layer 121 on the end face 11021 of the light output end 1102.

[0201] S220. Form an electron excitation layer 121 on the end face 11021 of the light output end 1102 of the optical fiber component 101. The electron excitation layer 121 covers the optical fiber core 111 of the optical fiber component 101, so that the electron excitation layer 121 is located on the light output path of the laser emitted from the optical fiber core 111. The electron excitation layer 121 includes at least one of zero-dimensional materials, one-dimensional materials, and two-dimensional materials.

[0202] The electron excitation layer 121 can be formed by at least one of dry transfer, wet transfer, and direct growth.

[0203] In some embodiments, the electron excitation layer 121 is prepared by dry transfer. The preparation method includes: transferring zero-dimensional materials, one-dimensional materials, and / or two-dimensional materials to a tape by mechanical exfoliation, and transferring the zero-dimensional materials, one-dimensional materials, and / or two-dimensional materials to the end face 11021 of the light output end 1102 of the optical fiber component 101.

[0204] Refer to Figure 16 as shown in Figure 16 which is a schematic flow chart of the preparation method of the electron source 100 according to an embodiment of the present application.

[0205] Taking two-dimensional materials as an example for illustration, the preparation process of forming the electron excitation layer 121 by dry transfer is as follows:

[0206] (1) The two-dimensional material can be thinned by mechanical exfoliation until the electron excitation layer 121 with a preset thickness is formed. Specifically, the two-dimensional material is adhered to a highly viscous tape A, and a highly viscous tape B can be used to mechanically exfoliate along the crystal cleavage plane of the two-dimensional material repeatedly until the electron excitation layer 121 with a preset thickness is formed.

[0207] (2) Transfer the electron excitation layer 121 with a preset thickness to a temporary substrate 20, and remove the tape B on the electron excitation layer 121. Specifically, the tape B can be easily peeled off by heating, and the tape B is peeled off from the electron excitation layer 121. Or the tape B can be directly peeled off from the electron excitation layer 121.

[0208] (3) Transfer the electron excitation layer 121 on the temporary substrate 20 to the end face 11021 of the light output end 1102 of the optical fiber component 101.

[0209] Optionally, the electron excitation layer 121 is selected as a two-dimensional material, and the material of the temporary substrate 20 can be selected as a polycarbonate propylene film.

[0210] Of course, the present application is not limited to this. The dry transfer method can also be combined with the direct growth method (such as chemical vapor deposition). For example, an electron excitation layer 121 with a preset thickness is grown on the substrate to be peeled off, and then the electron excitation layer 121 is transferred from the substrate to be peeled off to the temporary substrate 20 by etching the substrate to be peeled off with acid or tearing it by hand, and then the electron excitation layer 121 on the temporary substrate 20 is transferred to the end face 11021 of the light output end 1102 of the optical fiber assembly 101. Among them, the substrate to be peeled off can be metal or other materials that can be etched with acid or torn by hand.

[0211] In some other embodiments, the electron excitation layer 121 is prepared by a wet transfer method. The preparation method includes: directly preparing zero-dimensional materials, one-dimensional materials or two-dimensional materials in a solution and floating them on the liquid surface, making the end face 11021 of the light output end 1102 of the optical fiber assembly 101 contact the zero-dimensional materials, one-dimensional materials or two-dimensional materials on the liquid surface, and drying the zero-dimensional materials, one-dimensional materials and / or two-dimensional materials on the end face 11021 of the light output end 1102 of the optical fiber assembly 101.

[0212] In still some other embodiments, the electron excitation layer 121 is prepared by a direct growth method. The preparation method includes: directly preparing the electron excitation layer 121 on the end face 11021 of the light output end 1102 of the optical fiber assembly 101 by at least one of chemical vapor deposition, physical vapor deposition, molecular beam epitaxy and liquid filling.

[0213] Optionally, before or after forming the electron excitation layer 121 on the end face 11021 of the light output end 1102 of the optical fiber assembly 101, the preparation method of the electron source 100 further includes:

[0214] S230. Form a conductive connection layer 130 on the end face 11021 of the light output end 1102 of the optical fiber assembly 101 so that the conductive connection layer 130 overlaps with the electron excitation layer 121.

[0215] That is to say, the conductive connection layer 130 can be formed first and then the electron excitation layer 121; or the electron excitation layer 121 can be formed first and then the conductive connection layer 130; as long as the electron excitation layer 121 and the conductive connection layer 130 are electrically connected to each other, in this way, electrons can be supplied to the electron excitation layer 121 by means of the conductive connection layer 130, which is beneficial to the continuous emission of electrons from the electron excitation layer 121 under the excitation of laser.

[0216] Optionally, forming a conductive connection layer 130 on the end face 11021 of the light output end 1102 of the optical fiber assembly 101 so that the conductive connection layer 130 overlaps with the electron excitation layer 121 specifically includes:

[0217] S231. Form a core protection layer on the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101, and the core protection layer covers a plurality of cores 111 of the optical fiber assembly 101.

[0218] It can be that the core protection layer directly covers the cores 111 of the optical fiber assembly 101, or it can be that the core protection layer indirectly covers the cores 111 of the optical fiber assembly 101, and no specific limitation is made here.

[0219] Optionally, a polymer microsphere solution can be coated on the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 to form a core protection layer covering the cores 111. Exemplarily, the polymer microsphere solution is a polymethyl methacrylate suspension.

[0220] S232. Form a conductive material layer covering the core protection layer on the optical fiber assembly 101.

[0221] The conductive material layer can be formed by evaporation coating. Specifically, a metal evaporation coating device can be used to form the conductive material layer on the optical fiber assembly 101.

[0222] S233. Remove the core protection layer and the part of the conductive material layer disposed on the core protection layer to form a conductive connection layer 130.

[0223] Optionally, a solvent that can dissolve the core protection layer and does not interact with the conductive material layer can be used to remove the core protection layer. Specifically, the light-emitting end 1102 of the optical fiber assembly 101 can be soaked in acetone, so that the core protection layer (polymer microspheres) is dissolved, and the part of the conductive material layer disposed on the core protection layer (part of the metal coating) flakes off to obtain the conductive connection layer 130.

[0224] It can be understood that the core protection layer can be used to make the orthographic projection of the conductive connection layer 130 on the end face 11021 of the light-emitting end 1102 not coincide with the orthographic projection of the cores 111 of the optical fiber assembly 101 on the end face 11021 of the light-emitting end 1102, so that the laser transmitted in the cores 111 of the optical fiber assembly 101 can better interact with the electron excitation layer 121 covering the cores 111 of the optical fiber assembly 101.

[0225] In some embodiments, please refer to Figure 16 , the steps of forming the electron excitation layer 121 on the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 specifically include the following steps. Specifically, the specific steps of transferring the electron excitation layer 121 on the temporary substrate 20 to the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 are as follows:

[0226] S221. Set the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 opposite to and parallel to the electron excitation layer 121 in the first direction.

[0227] Specifically, observe the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 and the electron excitation layer 121 under a microscope, and set the electron excitation layer 121 opposite to and parallel to the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 in the first direction, and make the center connection line of the two extend in the first direction.

[0228] S222. Drive the optical fiber assembly 101 to move in the first direction to contact the electron excitation layer 121.

[0229] S223. At a preset temperature, make the electron excitation layer 121 adhere to the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101.

[0230] In this way, the center of the electron excitation layer 121 can be aligned with the center of the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 by using a microscope, and the two are adhered to each other at a certain temperature, so that the electron excitation layer 121 and the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 can be closely adhered under the action of van der Waals force, improving the bonding strength of the electron excitation layer 121 on the optical fiber assembly 101, and also facilitating the electron excitation layer 121 to completely cover the optical fiber core 111 of the optical fiber assembly 101, so that the laser transmitted by the optical fiber core 111 can better interact with the electron excitation layer 121.

[0231] In some specific embodiments, step S220 of forming the electron excitation layer 121 on the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 specifically includes the following steps. Specifically, the specific steps of transferring the electron excitation layer 121 on the temporary substrate 20 to the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 are as follows:

[0232] S2201. Stick an annular heating sheet 40 on the back of the perforated glass slide 30 of the microscope, fix the temporary substrate 20 with the electron excitation layer 121 on the bottom side of the annular heating sheet 40 (the temporary substrate 20 can be fixed on the bottom side of the annular heating sheet 40 by an adhesive fixing method), and make the electron excitation layer 121 on the temporary substrate 20 face downward, and fix the optical fiber assembly 101 below the electron excitation layer 121, so that the central axes of the objective lens of the microscope, the perforated glass slide 30, the annular heating sheet 40, the center of the electron excitation layer 121, and the center of the optical fiber core 111 coincide and are arranged in sequence from top to bottom.

[0233] Optionally, a fixture can be used to fix the optical fiber assembly 101 on the moving platform, and the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 is arranged upward. The moving platform is used to adjust the position of the optical fiber assembly 101 in the first direction and to adjust the angle of the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 relative to the horizontal plane to make it horizontally arranged.

[0234] Optionally, the fixture can be a pneumatic gripper or an electric gripper.

[0235] Optionally, the moving platform can be a six-degree-of-freedom platform. The moving platform can also include a linear drive mechanism and a rotary drive mechanism connected to the linear drive mechanism. The output end of the rotary drive mechanism is connected to the fixture to drive the fixture and the optical fiber assembly 101 clamped by the fixture to rotate around an axis parallel to the horizontal plane so that the end face 11021 of the light-emitting end 1102 is horizontally arranged. The linear drive mechanism is used to drive the rotary drive mechanism, the fixture, and the optical fiber assembly 101 to move in the first direction.

[0236] Wherein, the linear drive mechanism can be a motor or a cylinder, and the rotary drive mechanism can be a motor or a rotary cylinder.

[0237] S2202. Observe the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 and the electron excitation layer 121 under the microscope, and make the electron excitation layer 121 and the end face 11021 of the light-emitting end 1102 of the optical fiber assembly 101 arranged opposite to each other in the first direction and parallel to each other, and make the center connection line of the two extend in the first direction.

[0238] The center alignment of the end face 11021 of the light-emitting end 1102 and the electron excitation layer 121 can be completed with the aid of a microscope.

[0239] S2203. Connect the annular heating sheet 40 to an external power supply to apply a first preset voltage to the annular heating sheet 40 and preheat the electron excitation layer 121 on the temporary substrate 20 (heat it to the preheating temperature), which is beneficial for the electron excitation layer 121 to be more flat.

[0240] Optionally, the first preset voltage is 1V - 1.5V, and the preheating temperature is 50 - 60°C.

[0241] S2204. Drive the optical fiber assembly 101 to move in the first direction to contact the electron excitation layer 121. Newton's rings can appear when the end face 11021 of the light-emitting end 1102 and the electron excitation layer 121 are in contact.

[0242] S2205. At a preset temperature, closely attach the electron excitation layer 121 to the end face 11021 of the light output end 1102 of the optical fiber assembly 101. Specifically, apply a second preset voltage to the annular heating sheet 40, and heat the electron excitation layer 121 on the temporary substrate 20 to the preset temperature, which is conducive to more closely attaching the electron excitation layer 121 to the end face 11021 of the light output end 1102.

[0243] Optionally, the second preset voltage is 2.5V - 4V, and the preset temperature is 90 - 100°C.

[0244] S2206. Remove the temporary substrate 20. The temporary substrate 20 can be removed by a method combining melting heating and solvent immersion. Specifically, apply a third preset voltage to the annular heating sheet 40, and heat the temporary substrate 20 to the melting temperature until it melts. It should be noted that the melting point of the electron excitation layer 121 is much higher than that of the temporary substrate 20.

[0245] Optionally, the third preset voltage is 5.5V - 6V, and the melting temperature is 130 - 150°C.

[0246] After the electron excitation layer 121 is closely attached to the end face 11021 of the light output end 1102, the part of the temporary substrate 20 in contact with the annular heating sheet 40 can be melted by melting heating, and the electron excitation layer 121 can be separated from the annular heating sheet 40 and closely attached to the end face 11021 of the light output end 1102 of the optical fiber assembly 101, which is convenient for subsequently removing the temporary substrate 20 remaining on the electron excitation layer 121. The part of the temporary substrate 20 not in contact with the annular heating sheet 40 remains on the electron excitation layer 121. The optical fiber assembly 101 can be taken off the fixture and the light output end 1102 of the optical fiber assembly 101 can be immersed in acetone to dissolve the temporary substrate 20 remaining on the electron excitation layer 121 and completely remove the temporary substrate 20.

[0247] After the electron source 100 is prepared, the electron exposure machine 10 can be prepared by setting up structures such as the outer shell 300 and the control system. The vacuum chamber 310 inside the outer shell 300 is connected to an external vacuum system to keep the vacuum chamber 310 inside the outer shell 300 in a vacuum state. Along the axis of the vacuum chamber 310 of the outer shell 300 from top to bottom, an electron source 100, a focusing magnetic lens 610, and a deflection coil 620 are sequentially arranged in the vacuum chamber 310, and then a sample stage 400 is correspondingly set so that the electron beam emitted by the electron source 100 can be projected onto the position of the sample stage 400 to facilitate the exposure of the sample 410 on the sample stage 400. The sample stage 400 can be set on an electronically controlled displacement stage to facilitate driving the sample stage 400 to move through the electronically controlled displacement stage, thereby facilitating the picking and placing of the sample 410. After the hardware assembly is completed, the electron source 100, the focusing magnetic lens 610, the deflection coil 620, and the Faraday cup can be respectively connected to the control system to facilitate the control system to control them.

[0248] The control system can realize the connection between the above components through software such as Labview, input the patterned data to be exposed into the control system, and the control system converts the received patterned data into an exposure unit, and automatically calculates the scanning path of the electron beam and the switching light time of the electron source 100 according to the beam current intensity of the electron beam during exposure, the vacuum state of the vacuum chamber 310 inside the outer shell 300, and the focusing effect of the electron beam, forming two sets of commands for focusing deflection and electro-optical modulation, that is, controlling the focusing magnetic lens 610 and the deflection coil 620 to adjust the focusing and deflection states of the electron beam, and controlling the light modulation component 500 to control the passing situation of the laser in the optical fiber 110, so as to obtain a better exposure effect. The two sets of commands for focusing deflection and electro-optical modulation can also be calibrated to make them highly consistent in time to avoid mismatch of the control system during the exposure operation. And multiple optical switches can be correspondingly set on the optical fiber assembly 101 or a spatial light modulator can be correspondingly set, and then the optical switches or the spatial light modulator are correspondingly connected to the control system to respectively control the propagation of light in multiple fiber cores 111.

[0249] The embodiments of the present invention will be described in detail below in conjunction with the embodiments. It should be understood that these embodiments are only used to illustrate the present invention and not to limit the scope of the present invention. For the experimental methods without specific conditions in the following embodiments, the guidance given in the present invention is preferentially referred to, and it can also be carried out according to the experimental manuals or conventional conditions in the art, or according to the conditions recommended by the manufacturers, or referring to the experimental methods known in the art.

[0250] Example 1

[0251] The optical fiber component 101 selects an array of optical fibers. The diameter of the core 111 of the optical fiber 110 in the array of optical fibers is 8.2 μm, the diameter of the optical fiber 110 is 125 μm, the angle ɑ is selected to be 30 degrees, that is, the bevel angle of the optical fiber 110 forms a 30-degree angle with the axis of the optical fiber 110, and the wavelength of the laser transmitted in the optical fiber 110 is 1550 nm. The conductive connection layer 130 includes 5 nm of titanium and 60 nm of gold laminated on the optical fiber 110. Among them, the core 111 at the end face 11021 of the light-emitting end 1102 is exposed (without being covered by the conductive connection layer 130). The electron excitation layer 121 selects a two-dimensional graphene material (the thickness of the two-dimensional graphene material is 1 nm). The shape of the two-dimensional graphene material is not limited and can be a polygon, a circle, an ellipse, etc. The electron excitation layer 121 is disposed on the end face 11021 of the light-emitting end 1102 of the optical fiber 110 and completely covers the core 111 of the optical fiber 110. Exemplarily, in the radial direction of the optical fiber 110, the size of the electron excitation layer 121 is 30 - 60 μm (much larger than the diameter of the core 111. In this embodiment, in the radial direction of the optical fiber 110, the size of the electron excitation layer 121 is 50 μm).

[0252] Example 2

[0253] The optical fiber component 101 selects the pixel optical fiber FIGH-06-300S of Fujikura Corporation. The diameter of the core 111 of the optical fiber component 101 is 270 μm, which is composed of a densely arranged multi-mode optical fiber with a diameter of 5 μm. The diameter of the optical fiber component 101 is 300 μm. The conductive connection layer 130 includes 5 nm of titanium and 60 nm of gold laminated on the optical fiber component 101. Among them, the core 111 at the light-emitting end 1102 is exposed (without being covered by the conductive connection layer 130). The electron excitation layer 121 selects a two-dimensional graphene material (the thickness of the two-dimensional graphene material is 1 nm). The shape of the two-dimensional graphene material is not limited and can be a polygon, a circle, an ellipse, etc. The electron excitation layer 121 is disposed on the end face 11021 of the light-emitting end 1102 of the optical fiber component 101 and completely covers the core 111 of the optical fiber component 101. Exemplarily, in the radial direction of the pixel optical fiber, the size of the electron excitation layer 121 is 30 - 60 μm (much larger than the diameter of the core 111. In this embodiment, in the radial direction of the optical fiber component 101, the size of the electron excitation layer 121 is 50 μm).

[0254] Example 3

[0255] The optical fiber component 101 selects an array of optical fibers. In the array of optical fibers, the diameter of the core 111 of the optical fiber 110 is 8.2 μm, the diameter of the optical fiber 110 is 125 μm, and the wavelength of the laser transmitted in the optical fiber 110 is 1550 nm. The above-mentioned conductive connection layer 130 is formed on the outer surface of the optical fiber 110. The conductive connection layer 130 includes 5 nm of titanium and 50 nm of gold laminated on the light-emitting end 1102 of the optical fiber 110. Among them, the core 111 at the light-emitting end 1102 is exposed (without being covered by the conductive connection layer 130). An auxiliary layer 122 with a thickness of 1 nm and made of graphene is deposited on the end face 11021 of the light-emitting end 1102 of the optical fiber 110; then a plurality of nanotubes are deposited on the auxiliary layer 122, and the axial direction of the nanotubes is parallel to the extension direction of the core 111 to obtain an electron excitation layer 121, and then an electron source 100 is obtained. Among them, the first conductive part 131 of the conductive connection layer 130 is arranged on the end face 11021 of the light-emitting end 1102 of the optical fiber 110 and overlaps with the auxiliary layer 122, and the second conductive part 132 of the conductive connection layer 130 is arranged on the outer peripheral surface of the optical fiber 110.

[0256] Comparative Example 1

[0257] The electron source 100 is prepared according to the structure of Example 1, and the only difference is that the electron excitation layer 121 in Example 1 is replaced by a gold layer with a thickness of 100 nm, and the preparation method of the gold layer is obtained by deposition.

[0258] Comparative Example 2

[0259] The electron source 100 is prepared according to the structure of Comparative Example 1, and the only difference is that the electron excitation layer 121 in Comparative Example 1 is replaced by a gold layer with a thickness of 1 nm.

[0260] The electron source 100 is prepared by using the above-mentioned examples and comparative examples, and the performance of the prepared electron source 100 is tested. The test results are as follows in the table:

[0261] Table 1

[0262] Number Stability Lifetime Operating vacuum degree Example 1 1％ 2000h 10 Pa Example 2 1％ 2000h 10 Pa Example 3 2％ 500 h <![CDATA[10 -3 Pa]]> Comparative Example 1 10％ 100 h <![CDATA[10 -5 Pa]]> Comparative Example 2 20％ 20 h <![CDATA[10 -5 Pa]]>

[0263] Among them, stability refers to when the excitation power of the electron source 100 is 50% or more of the damage power, the vacuum degree is 2X10 -5 Pa, the continuous emission current is 1 hour. After removing the bad points, the ratio of the difference between the maximum current and the minimum current to the average current is the stability. The stability can reflect the working stability of the electron source 100. Lifetime refers to when the excitation power of the electron source 100 is 50% or more of the damage power, the vacuum degree is 2X10 -5Pa, continuously emit current until the current decays to less than 10% of the initial value, which is defined as the lifetime. The working vacuum degree refers to the continuous emission current when the excitation power of the electron source 100 is 50% or more of the damage power. The vacuum degree gradually increases until a rapid decay of the current occurs (the rapid decay is defined as the current decaying by more than 50% within 1 minute). The vacuum degree at this time is defined as the working vacuum degree. It can be seen from the above table that the electron source 100 of the present application has good stability, a long lifetime, and a good working vacuum degree.

[0264] In the present application, low-dimensional materials such as zero-dimensional materials, one-dimensional materials, and two-dimensional materials have atomic-level dimensions. Electrons incident from the back can be emitted into the vacuum without passing through in-body transmission, which is very suitable for ultrafast electron sources with narrow pulse widths. Moreover, low-dimensional materials and different types of optical fibers can be directly integrated, bringing ultra-high stability and integration. In addition, low-dimensional materials have no dangling bonds, are stable, have a high melting point, and are not easily damaged, making them suitable for high-power-excited large-beam electron sources. When low-dimensional materials are integrated with the tip, very sharp optical fiber tips can be obtained, which have large optical field and electric field enhancement factors and provide a large emission beam current. There are many combinations of low-dimensional materials, suitable for optoelectronic sources with various properties. Finally, the fiber-integrated low-dimensional material electron source and the low-dimensional material integration have significant advantages. The optical fiber can not only transmit laser light, but also, as a carrier of low-dimensional materials, provide a stable excitation source with adjustable wavelength, polarization, and optical mode, can be applied to different application scenarios, and does not require a complex optical path. It has the characteristics of small volume and high integration. When integrated with other devices, stable integration can be achieved without cracking and transforming the vacuum electronic device.

[0265] The setting of the laser-excited electron excitation layer 121 in the present application to form an electron beam abandons the complex spatial light coupling structure set due to the introduction of external laser light, making the multi-beam fiber electron exposure machine 10 less affected by the environment, having a stable-excited electron beam, and thus being able to improve the scanning stability of the sample 410 to be measured. In addition, the electron source 100 of the present application uses low-dimensional materials as the materials for emitting electrons. Since the electron excitation layer 121 has a high optical nonlinear effect and a rich electron bandgap, the laser can better interact with the electron excitation layer 121 to excite the electrons in the electron excitation layer 121, and the electrons tunneling and emitting from the electron excitation layer 121 have the characteristics of small energy dispersion, high brightness, and high stability. Moreover, in the present application, an electron beam with a pulsed nature can be formed by laser-exciting the electron excitation layer 121, without opening an additional window on the electron microscope to provide a pulsed electron beam, without damaging the electron microscope cavity, facilitating miniaturized design, and by modulating the laser through the electron optical component 600, the electron beam it excites can be modulated, thereby reducing the impact on the scanning quality when modulating the electron beam, and thus being able to stably expose the sample 410 to be measured.

[0266] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as falling within the scope described in this specification.

[0267] The above-described embodiments only express several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims

1. A multi-beam fiber optic electron exposure machine for exposing a sample, characterized in that, The multi-beam fiber optic electron exposure machine includes: A light source for emitting laser light; An electron source including a fiber optic component coupled to the light source and an electron emission layer. The electron emission layer at least includes an electron excitation layer. The fiber optic component includes a plurality of cores for transmitting the laser light. The electron excitation layer is disposed on the light output path of the cores emitting the laser light so that the electron excitation layer can emit an electron beam under the excitation of the laser light. The electron excitation layer includes at least one of zero-dimensional materials, one-dimensional materials, and two-dimensional materials; The electron source further includes an optical modulator. One end of the optical modulator is connected to the light source, and the other end of the optical modulator is respectively connected to the plurality of cores of the fiber optic component. The optical modulator is used to control whether the laser light emitted by the light source is respectively transmitted into the corresponding cores; and An electron optical component is disposed on the electron beam output side of the electron source. The electron optical component is used to adjust the focusing and deflection direction of the electron beam so that the electron beam is incident on the sample to form a preset exposure pattern on the sample.

2. The multi-beam optical fiber electron exposure machine according to claim 1, wherein The fiber optic component includes a plurality of optical fibers arranged in an array. The electron excitation layer is provided on the end face of one end of each optical fiber that emits laser light so that the electron excitation layer is located on the light output path of the core of the corresponding optical fiber emitting the laser light.

3. The multi-beam fiber optic electron exposure machine according to claim 2, wherein The end face of the light output end of the fiber optic component is arranged at an angle with the extending direction of the core; The electron emission layer is disposed on the end face of the light output end of the fiber optic component, and the electron excitation layer covers the core of the fiber optic component. The laser light emitted by the core can directly irradiate on the electron emission layer so that the electron excitation layer is excited by the laser light emitted by the core and emits electrons.

4. The multi-beam fiber optic electron exposure machine according to claim 2, wherein The fiber optic component is configured to include a plurality of perforated optical fibers, and the perforated optical fibers have light guiding holes; The electron excitation layer is at least disposed on the side wall of the light guiding hole and extends along the longitudinal extension direction of the light guiding hole to the light output end of the fiber optic component.

5. The multi-beam fiber optic electron exposure machine according to claim 2, wherein, The fiber optic component is configured to include a plurality of perforated optical fibers, and the perforated optical fibers have light guiding holes; The electron emission layer is disposed on the end face of the light output end of the perforated optical fiber, and the electron excitation layer covers one end of the light guiding hole located on the end face of the light output end; The laser light emitted by the perforated optical fiber can directly irradiate on the electron emission layer so that the electron excitation layer is excited by the laser light emitted by the perforated optical fiber and emits electrons.

6. The multi-beam fiber optic electron exposure machine according to claim 2, wherein One end of the optical fiber that emits laser light is provided with a pointed end portion; The electron excitation layer covers the surface of the pointed end portion of the optical fiber; The optical fiber includes the core for transmitting laser light. The laser light emitted by the core can directly irradiate on the electron emission layer so that the electron excitation layer is excited by the laser light emitted by the core and emits electrons.

7. The multi-beam optical fiber electron exposure machine according to claim 2, characterized in that, The fiber optic component includes a plurality of cladding layers corresponding to the cores one by one. The cladding layers are correspondingly wrapped around the cores to form the optical fibers with the cores; One end of the optical fiber that emits laser light is radially configured with a light leakage notch along the optical fiber; The electron emission layer is disposed on the bottom wall surface of the light leakage notch, the bottom wall surface of the light leakage notch is configured as a plane, and the projection of the electron excitation layer on the bottom wall surface covers the projection of the fiber core on the bottom wall surface; The electron excitation layer further extends to the light-emitting end of the optical fiber.

8. The multi-beam optical fiber electron exposure machine according to claim 1, wherein, The optical fiber assembly includes a plurality of the fiber cores and a cladding layer wrapping the plurality of the fiber cores; The electron excitation layer is disposed on the light-emitting end of the optical fiber assembly so that the electron excitation layer is located on the light-emitting path of the laser emitted by the plurality of the fiber cores.

9. The multi-beam optical fiber electron exposure machine according to claim 8, characterized in that, The electron excitation layer is disposed on the end face of the light-emitting end of the optical fiber assembly; The laser emitted by the optical fiber assembly can directly irradiate the electron emission layer, so that the electron excitation layer is excited by the laser emitted by the optical fiber assembly and emits electrons.

10. The multi-beam optical fiber electron exposure machine according to claim 9, characterized in that, The end face of the light-emitting end of the optical fiber assembly is arranged at an angle with the extending direction of the fiber core; The laser emitted by the optical fiber assembly can directly irradiate the electron emission layer, so that the electron excitation layer is excited by the laser emitted by the optical fiber assembly and emits electrons.

11. The multi-beam fiber optic electron exposure machine according to claim 8, characterized in that, A pointed end portion is provided at one end of the optical fiber assembly where the laser is emitted; The electron excitation layer covers the surface of the pointed end portion of the optical fiber assembly; The laser emitted by the optical fiber assembly can directly irradiate the electron emission layer, so that the electron excitation layer is excited by the laser emitted by the optical fiber assembly and emits electrons.

12. The multi-beam optical fiber electron exposure machine according to any one of claims 1-11, characterized in that, The optical modulation member includes one of a spatial light modulator, an optical switch, and an electro-optic modulator.

13. The multi-beam fiber optic electron exposure machine according to any one of claims 1-11, characterized in that, The electron optical assembly includes a focusing magnetic lens and a deflection coil, and the focusing magnetic lens and the deflection coil are arranged at intervals along the emission direction of the electron beam on the electron beam emission side of the electron source.

14. The multi-beam optical fiber electron exposure machine according to any one of claims 1-11, characterized in that, The multi-beam fiber electron exposure machine further includes a housing; The housing has a vacuum chamber, and the electron source and the electron optical assembly are sequentially disposed in the vacuum chamber; An opening communicating with the vacuum chamber is provided on the housing, and the light-incident end of the fiber assembly of the electron source is exposed through the opening and is coupled to the light source; The outer peripheral wall of the fiber assembly is hermetically connected to the inner side wall of the opening.

15. The multi-beam optical fiber electron exposure machine according to any one of claims 7-11, characterized in that, The electron source further includes a conductive connection layer, and the conductive connection layer is disposed on the fiber assembly and is electrically connected to the electron excitation layer.

16. The multi-beam optical fiber electron exposure machine according to any one of claims 1-11, characterized in that, The electron source further includes an anode, the anode has a first electron channel, and the electron optical assembly has a second electron channel communicating with the first electron channel; A preset electric field is provided between the anode and the electron excitation layer, and the electron beam can pass through the first electron channel and the second electron channel under the drive of the preset electric field and is incident on the sample.

17. The electronic exposure machine according to claim 1, characterized in that The thickness of the electron excitation layer is less than or equal to 50 nm.

18. The electronic exposure machine according to claim 1, characterized in that, The included angle between the axial direction of the one-dimensional material in the electron excitation layer and the emission direction of the laser is 0 to 90°; 19. The electronic exposure machine according to claim 1, characterized in that, The electron excitation layer includes at least two two-dimensional materials stacked in sequence along the laser emission direction; or The electron excitation layer includes at least two two-dimensional materials with different materials connected to each other on the same plane.

20. The electronic exposure machine according to claim 1, characterized in that, The electron excitation layer includes zero-dimensional materials and zero-dimensional materials disposed at the end and / or side of the one-dimensional material.

21. The electronic exposure machine according to claim 1, characterized in that, The electron excitation layer includes a zero-dimensional material and a two-dimensional material, and the zero-dimensional material is disposed on the surface of the two-dimensional material.

22. The electronic exposure machine according to claim 1, characterized in that, The electron excitation layer includes a one-dimensional material and a two-dimensional material, and the one-dimensional material is disposed on the surface of the two-dimensional material.

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