Power detection device

Abstract

A power detection device comprises a group of power detectors, a group of voltage-current converters, a temperature compensation circuit, a current-voltage converter and a potential converter. The group of power detectors is used for generating a group of power detection voltages according to an input signal. The group of voltage-current converters is coupled to the group of power detectors and is used for generating a group of power detection currents according to the group of power detection voltages. The temperature compensation circuit is used for generating temperature compensation current according to temperature. The current-to-voltage converter is coupled to the set of voltage-to-current converters and the temperature compensation circuit for summing the set of power detection current and the temperature compensation current to generate a summed current and converting the summed current into a summed voltage. The potential converter is coupled to the current-to-voltage converter for receiving the summing voltage to generate a power output voltage.

Description

Technical Field

[0001] The present invention relates to a radio frequency circuit, and more particularly to a power detection device. Background Art

[0002] A power detection device is an electronic circuit used to detect the power of the input / output signals of an amplifier, and is commonly applied in wireless communication, audio devices, and radio frequency transmission. Power detection devices are often implemented using transistors or diodes. However, the performance of transistors and diodes (such as turn-on voltage or output current) is affected by temperature changes, resulting in drift of the output power detection signal. Summary of the Invention

[0003] An embodiment of the present invention discloses a power detection device, including a group of power detectors, a group of voltage-current converters, a temperature compensation circuit, a current-voltage converter, and a potential converter. The group of power detectors is used to generate a group of power detection voltages according to an input signal. The group of voltage-current converters is coupled to the group of power detectors and is used to generate a group of power detection currents according to the group of power detection voltages. The temperature compensation circuit includes a group of compensation diodes and / or a group of compensation transistors and is used to generate a temperature compensation current according to temperature. The current-voltage converter is coupled to the group of voltage-current converters and the temperature compensation circuit and is used to sum the group of power detection currents and the temperature compensation current to generate a total current, and convert the total current into a total voltage. The potential converter is coupled to the current-voltage converter and includes a group of conversion transistors and is used to receive the total voltage to generate a power output voltage. Brief Description of the Drawings

[0004] Figure 1 is a block diagram of a power detection device in an embodiment of the present invention.

[0005] Figure 2 is Figure 1 a signal diagram of the group of power detectors in

[0006] Figure 3 is Figure 1 a circuit schematic diagram of the group of power detectors in

[0007] Figure 4 is a circuit schematic diagram of a group of power detection circuits in an embodiment of the present invention.

[0008] Figure 5 is another circuit schematic diagram of a group of power detectors in an embodiment of the present invention.

[0009] Figure 6 is Figure 1 a circuit schematic diagram of the group of voltage-current converters, the temperature compensation circuit, and the current-voltage converter in

[0010] Figure 7 For Figure 1 the signal diagram of the group of voltage-current converters in

[0011] Figure 8 For Figure 1 another circuit schematic diagram of the group of voltage-current converters, temperature compensation circuit, and current-voltage converter in

[0012] Figure 9 For Figure 1 another circuit schematic diagram of the group of voltage-current converters, temperature compensation circuit, and current-voltage converter in

[0013] Figure 10 For Figure 1 a circuit schematic diagram of the envelope detector in

[0014] Figure 11 For Figure 1 another circuit schematic diagram of the envelope detector in

[0015] Figure 12 For Figure 1 another circuit schematic diagram of the envelope detector in

[0016] Figure 13 a module diagram of a power amplifier in an embodiment of the present invention.

[0017] Symbol Explanation:

[0018] 1: Power detection device

[0019] 10: Power detector

[0020] 101 to 103: Attenuator

[0021] 111 to 113, 411 to 413, 511 to 513: Power detection circuit

[0022] 12, 121 to 123: Harmonic filter

[0023] 14, 141 to 143: Voltage-current converter

[0024] 15, 85, 95: Temperature compensation circuit

[0025] 16: Current-voltage converter

[0026] 160: Current node

[0027] 162: Current-voltage conversion circuit

[0028] 18: Envelope detector

[0029] 181: Potential converter

[0030] 182: Low-pass filter

[0031] 90: Noise filter

[0032] 13: Power amplifier circuit

[0033] B1 to B3: Bias circuit

[0034] Ca1 to Ca3, Cag1 to Cag3, Cvi1 to Cvi3, Cfilter, Cn, Ce, Cbf1, Cbf2: Capacitor D1 to D3, D: Diode

[0035] Dt: Compensation diode

[0036] I, II, III: Power range

[0037] IPD1 to IPD3: Power detection current

[0038] Ib, Ic: Current

[0039] Itemp: Temperature compensation current

[0040] M1 to M6, Mtc1, Mtc2, Md: Transistor

[0041] MC1 to MC4 Matching circuit

[0042] Mt: Compensation transistor

[0043] PA1 to PA3: Power amplifier

[0044] PDIN: Input signal

[0045] PDOUT: Power output signal

[0046] PIN: Input signal

[0047] POUT: Output signal

[0048] Ra1 to Ra3, Rd1 to Rd3, Rde1 to Rde3, Rref1, Rref2, Rvi1 to Rvi3, Rvie1 to Rvie3, Riv, Rt, Rn, Re: Resistor

[0049] VCCB, VREF, VR: Reference voltage

[0050] VCC1 to VCC3: Supply voltage

[0051] VD1, VD2, VD3: Attenuation signal

[0052] VDF1, VDF2, VDF3: Filter voltage

[0053] VDO1, VDO2, VDO3: Power detection voltage

[0054] VH, VL: Level

[0055] VSUM: Sum voltage Detailed implementation manners

[0056] The transistor mentioned in the embodiments of the present invention may be a bipolar junction transistor (BJT) or a metal oxide semiconductor field-effect transistor (MOSFET). When the transistor is a bipolar junction transistor, the control terminal may be the base, the first terminal may be the collector, and the second terminal may be the emitter. When the transistor is a metal oxide semiconductor field-effect transistor, the control terminal may be the gate, the first terminal may be the drain, and the second terminal may be the source.

[0057] Figure 1 It is a block diagram of a power detection device 1 in the embodiments of the present invention. The power detection device 1 can receive an input signal PDIN and detect the amplitude of the input signal PDIN to generate a power output signal PDOUT that is substantially independent of temperature or has only a slight change with temperature. The input signal PDIN may be an alternating voltage, especially a radio frequency (RF) voltage. The power output signal PDOUT may be a direct current voltage corresponding to the power level of the input signal PDIN. The input signal PDIN may be the input signal or the output signal of a power amplifier.

[0058] The power detection device 1 may include a set of power detectors 10, a set of harmonic filters 12, a set of voltage-to-current converters (V2I) 14, a temperature compensation circuit 15, a current-to-voltage converter 16, and an envelope detector 18. The set of power detectors 10, the set of harmonic filters 12, and the set of voltage-to-current converters 14 may be coupled in sequence. The set of voltage-to-current converters 14 and the temperature compensation circuit 15 may be coupled to the current-to-voltage converter 16. The envelope detector 18 may be coupled to the current-to-voltage converter 16. The set of power detectors 10 may generate a set of power detection voltages (VDO1, VDO2, VDO3) according to the input signal PDIN. Each of the set of harmonic filters 12 may be a resistor-capacitor (RC) low-pass filter for selectively filtering out the harmonic frequencies in the set of power detection voltages (VDO1, VDO2, VDO3) to generate a set of filtered voltages (VDF1, VDF2, VDF3), thereby improving the signal quality. The set of voltage-to-current converters 14 may generate a set of power detection currents (IPD1, IPD2, IPD3) according to the set of filtered voltages (VDF1, VDF2, VDF3) after filtering out the harmonic frequencies. The temperature compensation circuit 15 may generate a temperature compensation current Itemp according to the temperature. The temperature compensation circuit 15 may include a set of compensation diodes and / or a set of compensation transistors. The current-to-voltage converter 16 may include a current node 160 and a current-to-voltage conversion circuit (I2V) 162. The current node 160 may sum up the set of power detection currents (IPD1, IPD2, IPD3) and the temperature compensation current Itemp to generate a summed current (IPD1 + IPD2 + IPD3 + Itemp), and the current-to-voltage conversion circuit 162 may sum up and convert the current (IPD1 + IPD2 + IPD3 + Itemp) into a summed voltage VSUM. The envelope detector 18 may receive the summed voltage VSUM to generate a power output voltage PDOUT. The envelope detector 18 may include a potential converter 181 and a low-pass filter 182. The potential converter 181 may include a set of conversion transistors for adjusting the level of the summed voltage VSUM, and the low-pass filter 182 may filter out the AC component in the summed voltage VSUM to generate a DC power output voltage PDOUT.

[0059] The components in the power detection device 1 can be implemented using bipolar junction transistors (BJTs) or metal oxide semiconductor field-effect transistors (MOSFETs). However, the electrical characteristics of BJTs and MOSFETs are affected by temperature. Therefore, the power detection device 1 uses a temperature compensation circuit 15 to compensate for the temperature effect, so that the power output signal PDOUT does not change with temperature or only changes slightly. In other words, the temperature compensation circuit 15 can make the sum voltage VSUM have a negative temperature coefficient, thereby compensating for the temperature drift of the potential converter 181 in the envelope detector 18 to reduce the temperature drift of the power output signal PDOUT. For example, the set of compensation transistors in the temperature compensation circuit 15 and the set of conversion transistors in the potential converter 181 can both be BJTs. Therefore, the PN junctions of the set of compensation diodes and / or the set of compensation transistors and the set of conversion transistors are made of the same material, and the set of compensation diodes and / or the set of compensation transistors generate a temperature compensation current Itemp through the PN junction. Since the PN of the set of compensation diodes / set of compensation transistors and the set of conversion transistors is formed of the same material (e.g., the same n+ / p doping composition and concentration), they have the same temperature coefficient. Therefore, the temperature compensation current Itemp generated by the set of compensation transistors can compensate for the temperature change of the set of conversion transistors. In some embodiments, the temperature compensation current Itemp can have a positive temperature coefficient, and the sum voltage VSUM can have a negative temperature coefficient.

[0060] The set of power detectors 10 may include N power detectors to detect power in segments for improving the linearity of the detected power, where N is a positive integer greater than 1. The N power detectors may generate N power detection voltages according to an input signal PDIN. Each power detector may include an attenuator and a power detection circuit, and may determine the power detection voltage generated by each power detector. Correspondingly, the set of harmonic filters 12 may include N harmonic filters, each harmonic filter being coupled to a corresponding one of the N power detectors, and may filter out harmonic components (such as a first harmonic component sin(ωt) and a second harmonic component sin(2ωt), where ω is the fundamental frequency and t is time) in the power detection voltage of the corresponding power detector to generate a filtered voltage. The filtered voltage may include a DC component and / or a baseband component. The set of voltage-current converters 14 may include N voltage-current converters, each voltage-current converter being coupled to a corresponding one of the N power detectors through a corresponding one of the N harmonic filters, and may generate a power detection current based at least on the filtered voltage of the corresponding harmonic filter. For example, if N = 3, the set of power detectors 10 may include three power detectors, the set of harmonic filters 12 may include harmonic filters 121 to 123, and the set of voltage-current converters 14 may include voltage-current converters 141 to 143, as Figure 1 shown.

[0061] In Figure 1Among them, the first power detector may include an attenuator 101 and a power detection circuit 111 for generating a power detection voltage VDO1. The second power detector may include an attenuator 102 and a power detection circuit 112 for generating a power detection voltage VDO2. The third power detector may include an attenuator 103 and a power detection circuit 113 for generating a power detection voltage VDO3. The attenuators 101 to 103 may include resistors and / or capacitors for adjusting the attenuation amount of the input signal PDIN and controlling the impedance matching of the signal source. The attenuators 101 to 103 may receive the input signal PDIN and have different attenuation amounts to generate attenuated signals VD1 to VD3. In one embodiment, the attenuators 101 to 103 may sequentially attenuate the input signal PDIN, and the signal intensities of the attenuated signals VD1 to VD3 corresponding to the input signal PDIN may increase sequentially. The power detection circuits 111 to 113 may respectively perform half-wave rectification on the attenuated signals VD1 to VD3 to generate the power detection voltages VDO1 to VDO3. When the attenuated signals VD1, VD2, and / or VD3 are less than the linear operating range of the power detection circuits 111, 112, and / or 113, the power detection voltages VDO1, VDO2, and / or VDO3 may be maintained at a low level. When the attenuated signals VD1, VD2, and / or VD3 fall within the linear operating range of the power detection circuits 111, 112, and / or 113, the power detection voltages VDO1, VDO2, and / or VDO3 may linearly increase as the attenuated signals VD1, VD2, and / or VD3 increase. When the attenuated signals VD1, VD2, and / or VD3 are respectively greater than the linear operating range of the power detection circuits 111, 112, and / or 113, the power detection voltages VDO1, VDO2, and / or VDO3 may be maintained at a high level.

[0062] Figure 2 It is a signal diagram of the set of power detectors 10, where the horizontal axis represents the power of the input signal PDIN in decibel-milliwatts (dBm), and the vertical axis represents the power output voltage PDOUT component affected by the power detection voltages VDO1 to VDO3 and the sum voltage (VDO1 + VDO2 + VDO3) in volts (V). In the operating power range, the power output voltage PDOUT may be linearly related to the power of the input signal PDIN.

[0063] When the power of the input signal PDIN falls within the low power range I, the component of the power output voltage PDOUT affected by the power detection voltage VDO1 can linearly increase from the low level VL to the high level VH as the power of the input signal PDIN increases. The components of the power output voltage PDOUT affected by the power detection voltages VDO2 and VDO3 can be maintained at the low level VL. At this time, the component of the power output voltage PDOUT affected by the sum voltage (VDO1 + VDO2 + VDO3) can linearly increase from 3VL to (2VL + VH) as the power detection voltage VDO1 increases. When the power of the input signal PDIN falls within the medium power range II, the component of the power output voltage PDOUT affected by the power detection voltage VDO1 can be maintained at the high level VH. The component of the power output voltage PDOUT affected by the power detection voltage VDO2 can linearly increase from the low level VL to the high level VH as the power of the input signal PDIN increases. The component of the power output voltage PDOUT affected by the power detection voltage VDO3 can be maintained at the low level VL. At this time, the component of the power output voltage PDOUT affected by the sum voltage (VDO1 + VDO2 + VDO3) can linearly increase from (2VL + VH) to (VL + 2VH) as the power detection voltage VDO2 increases. When the power of the input signal PDIN falls within the high power range III, the components of the power output voltage PDOUT affected by the power detection voltages VDO1 and VDO2 can be maintained at the high level VH. The component of the power output voltage PDOUT affected by the power detection voltage VDO3 can linearly increase from the low level VL to the high level VH as the power of the input signal PDIN increases. At this time, the component of the power output voltage PDOUT affected by the sum voltage (VDO1 + VDO2 + VDO3) can linearly increase from (VL + 2VH) to 3VH as the power detection voltage VDO3 increases. Therefore, the power detection circuits 111, 112, and 113 can achieve a wide range of linear power detection within their respective linear operating ranges.

[0064] In one embodiment, at least two of the attenuators 101 to 103 can be connected in parallel with each other and at least two of the attenuators can be connected in series with each other, as Figure 3 shown. Figure 3It is a circuit schematic diagram of the group of power detectors 10. The group of power detectors 10 may include attenuators 101 to 103, power detection circuits 111 to 113, and a resistor Rref1. The resistor Rref1 includes a first end and a second end. The first end is coupled to the second reference voltage terminal for receiving a reference voltage VREF; the second end is used to provide a voltage VREFD. The attenuators 102 and 103 may be connected in series with each other, and the attenuator 101 may be connected in parallel with the series-connected attenuators 102 and 103. The attenuator 101 may be coupled to the power detection circuit 111, the attenuator 102 may be coupled to the power detection circuit 112, the attenuator 103 may be coupled to the power detection circuit 113, and the power detection circuits 111 to 113 may be coupled to the first end of the resistor Rref1. In some embodiments, the resistor Rref1 may be omitted, and the power detection circuits 111 to 113 may be coupled to the second reference voltage terminal for receiving the reference voltage VREF. The attenuator 101 may receive an input signal PDIN and generate an attenuated signal VD1, the attenuator 102 may receive the input signal PDIN and generate an attenuated signal VD2, and the attenuator 103 may receive the attenuated signal VD2 and generate an attenuated signal VD3. The power detection circuit 111 may receive the attenuated signal VD1 and generate a power detection voltage VDO1, the power detection circuit 112 may receive the attenuated signal VD2 and generate a power detection voltage VDO2, and the power detection circuit 113 may receive the attenuated signal VD3 and generate a power detection voltage VDO3.

[0065] The attenuator 101 may include a resistor Ra1, and capacitors Ca1 and Cag1. The resistor Ra1 includes a first end and a second end, and the first end is used to receive the input signal PDIN. The capacitor Ca1 includes a first end and a second end, and the first end is coupled to the second end of the resistor Ra1. The capacitor Cag1 includes a first end and a second end, the first end is coupled to the second end of the capacitor Ca1 for generating the attenuated signal VD1; the second end is coupled to the first reference voltage terminal for receiving the reference voltage VR. The reference voltage VR may be a ground voltage, such as 0V.

[0066] The attenuator 102 may include a resistor Ra2, and capacitors Ca2 and Cag2. The resistor Ra2 includes a first end and a second end, and the first end is used to receive the input signal PDIN. The capacitor Ca2 includes a first end and a second end, and the first end is coupled to the second end of the resistor Ra2. The capacitor Cag2 includes a first end and a second end, the first end is coupled to the second end of the capacitor Ca2 for generating the attenuated signal VD2; the second end is coupled to the first reference voltage terminal for receiving the reference voltage VR.

[0067] The attenuator 103 may include a resistor Ra3, and capacitors Ca3 and Cag3. The resistor Ra3 includes a first end and a second end, and the first end is coupled to the second end of the capacitor Ca2. The capacitor Ca3 includes a first end and a second end, and the first end is coupled to the second end of the resistor Ra3. The capacitor Cag3 includes a first end and a second end, the first end is coupled to the second end of the capacitor Ca3 to generate an attenuation signal VD3; the second end is coupled to a first reference voltage terminal to receive a reference voltage VR.

[0068] The resistors Ra1 to Ra3 may attenuate the input signal PDIN and increase the input impedance of the power detection device 1. The capacitors Ca1 to Ca3 may remove the DC offset error between the attenuators 101 to 103 and only allow the AC component to pass through, thereby ensuring the accuracy of the signal. The capacitors Cag1 to Cag3 may attenuate the AC component of the input signal PDIN and adjust the input impedance of the power detection device 1. In some embodiments, the attenuators 101 to 103 may be serially connected in sequence. Therefore, the attenuators 101 to 103 may weaken the input signal PDIN to generate attenuation signals VD1 to VD3 with different attenuation amounts. At the same time, the attenuators 101 to 103 may use resistor elements and capacitor elements to optimize the real part and the imaginary part of the input signal PDIN respectively, so as to improve the error vector magnitude (EVM) of the power amplifier, thereby improving the performance and efficiency.

[0069] The resistor Rref1 includes a first end, coupled to a second reference voltage terminal to receive a reference voltage VREF; and a second end for providing a voltage VREFD. The reference voltage VREF may be greater than the reference voltage VR. For example, the reference voltage VREF is 3V.

[0070] The power detection circuit 111 may include a resistor Rd1 and a transistor M1. The resistor Rd1 includes a first end and a second end, the first end is coupled to the second end of the resistor Rref1; the second end is coupled to the first end of the capacitor Cag1 to receive the attenuation signal VD1 and generate a power detection voltage VDO1. The transistor M1 includes a control end, a first end and a second end; the first end is coupled to the control end of the transistor M1 and the second end of the resistor Rd1; the second end is coupled to a first reference voltage terminal to receive a reference voltage VR.

[0071] The power detection circuit 112 may include a resistor Rd2 and a transistor M2. The resistor Rd2 includes a first end and a second end, the first end is coupled to the first end of the resistor Rd1, and the second end is coupled to the first end of the capacitor Cag2 to receive the attenuation signal VD2 and generate a power detection voltage VDO2. The transistor M2 includes a control end, a first end and a second end; the first end is coupled to the control end of the transistor M2 and the second end of the resistor Rd2; the second end is coupled to a first reference voltage terminal to receive a reference voltage VR.

[0072] The power detection circuit 113 may include a resistor Rd3 and a transistor M3. The resistor Rd3 includes a first end and a second end. The first end is coupled to the first end of the resistor Rd1; the second end is coupled to the first end of the capacitor Cag3 for receiving the attenuation signal VD3 and generating a power detection voltage VDO3. The transistor M3 includes a control end, a first end, and a second end; the first end is coupled to the control end of the transistor M3 and the second end of the resistor Rd3; the second end is coupled to the first reference voltage terminal for receiving a reference voltage VR.

[0073] The transistors M1 to M3 may be bipolar junction transistors or metal oxide semiconductor field effect transistors. The transistors M1 to M3 are arranged in diode form. When the attenuation signals VD1, VD2, or VD3 are less than the turn-on voltages of the transistors M1, M2, or M3 (e.g., 0.7V), the transistors M1, M2, or M3 may be turned off, and the power detection voltages VDO1, VDO2, or VDO3 may be equal to the attenuation signals VD1, VD2, or VD3. When the attenuation signals VD1, VD2, or VD3 are greater than or equal to the turn-on voltages of the transistors M1, M2, or M3, the transistors M1, M2, or M3 may be turned on, and the power detection voltages VDO1, VDO2, or VDO3 may be equal to the turn-on voltages of the transistors M1, M2, or M3. Therefore, the transistors M1 to M3 can be regarded as a half-wave rectifier that passes the negative half-wave and cuts off the positive half-wave. In some embodiments, the transistors M1 to M3 may also be arranged as a half-wave rectifier that passes the positive half-wave and cuts off the negative half-wave.

[0074] Figure 4 It is a circuit schematic diagram of a group of power detection circuits. This group of power detection circuits may include power detection circuits 411 to 413 to replace Figure 3 the power detection circuits 111 to 113 in Figure 3 The resistor Rref1 can be removed from the group of power detectors 10 in

[0075] The power detection circuit 411 may include a resistor Rd1, a diode D1, and a resistor Rde1. The resistor Rd1 includes a first end and a second end. The first end is coupled to the second reference voltage terminal for receiving a reference voltage VREF; the second end is for receiving the attenuation signal VD1 and generating a power detection voltage VDO1. The diode D1 includes a first end (anode) and a second end (cathode), and the first end is coupled to the second end of the resistor Rd1. The resistor Rde1 includes a first end and a second end. The first end is coupled to the second end of the diode D1; the second end is coupled to the first reference voltage terminal for receiving a reference voltage VR.

[0076] The power detection circuit 412 may include a resistor Rd2, a diode D2, and a resistor Rde2. The resistor Rd2 includes a first end and a second end. The first end is coupled to the second reference voltage terminal for receiving a reference voltage VREF. The second end is for receiving an attenuation signal VD2 and generating a power detection voltage VDO2. The diode D2 includes a first end (anode) and a second end (cathode). The first end is coupled to the second end of the resistor Rd2. The resistor Rde2 includes a first end and a second end. The first end is coupled to the second end of the diode D2. The second end is coupled to the first reference voltage terminal for receiving a reference voltage VR.

[0077] The power detection circuit 413 may include a resistor Rd3, a diode D3, and a resistor Rde3. The resistor Rd3 includes a first end and a second end. The first end is coupled to the second reference voltage terminal for receiving a reference voltage VREF. The second end is for receiving an attenuation signal VD3 and generating a power detection voltage VDO3. The diode D3 includes a first end (anode) and a second end (cathode). The first end is coupled to the second end of the resistor Rd3. The resistor Rde3 includes a first end and a second end. The first end is coupled to the second end of the diode D3. The second end is coupled to the first reference voltage terminal for receiving a reference voltage VR.

[0078] The power detection circuits 411 to 413 operate in a similar manner to the power detection circuits 111 to 113. The power detection circuits 411 to 413 may respectively perform half-wave rectification on the attenuation signals VD1 to VD3 to generate power detection voltages VDO1 to VDO3. The resistors Rd1 to Rd3 may respectively control the bias points of the diodes D1 to D3. The resistors Rde1 to Rde3 may serve as emitter degeneration resistors for respectively increasing the linearity of the power of the input signal PDIN with respect to the power detection voltages VDO1 to VDO3. In one embodiment, the second ends of the diodes D1 to D3 are directly coupled to the reference voltage VR.

[0079] In the power detection circuit 411, the resistor Rd1, the diode D1, and the resistor Rde1 can be regarded as a voltage divider. The voltage at the first end of the diode D1 can be a voltage division of the reference voltage VREF, which is determined by the resistance values of the resistor Rd1 and Rde1 and the turn-on voltage (e.g., 0.7V) of the diode D1. In this embodiment, the voltage Vdiv at the first end of the diode D1 can be represented by Equation (1):

[0080] Vdiv1 = (VREF - THD1) * Rde1 / (Rde1 + Rd1) + THD1 Equation (1)

[0081] where Vdiv1 is the voltage at the first end of the diode D1;

[0082] VREF is the reference voltage;

[0083] Rde1 is the resistance value of resistor Rde1;

[0084] Rd1 is the resistance value of resistor Rd1; and

[0085] THD1 is the turn-on voltage of diode D1.

[0086] When the attenuation signal VD1 is less than the divided voltage Vdiv1, diode D1 can be turned off, and the power detection voltage VDO1 can be equal to the attenuation signal VD1. When the attenuation signal VD1 is greater than or equal to the divided voltage Vdiv1, diode D1 can be turned on, and the power detection voltage VDO1 can be equal to the divided voltage Vdiv1. The operation modes of power detection circuits 412 and 413 can be similar to that of power detection circuit 411, and the description thereof will not be repeated herein. According to the foregoing, power detection circuits 411 to 413 can be regarded as half-wave rectifiers that pass the negative half-wave and cut off the positive half-wave. In some embodiments, power detection circuits 411 to 413 can also be arranged as half-wave rectifiers that pass the positive half-wave and cut off the negative half-wave. The turn-on voltages of diodes D1 to D3 can change with temperature, for example, decrease as the temperature rises. For example, the temperature coefficient of the turn-on voltages of diodes D1 to D3 can be -2 mV / °C, that is, when the temperature rises by 1 degree Celsius, the turn-on voltages of diodes D1 to D3 will decrease by 2 millivolts.

[0087] Figure 5 is another circuit schematic diagram of a group of power detection circuits. This group of power detection circuits can include power detection circuits 511 to 513 to replace Figure 3 the power detection circuits 111 to 113 therein. Resistor Rref1 includes a first end and a second end. The first end is coupled to the second reference voltage terminal to receive the reference voltage VREF; the second end is used to provide the voltage VREFD.

[0088] Transistors M1 to M3 of power detection circuits 511 to 513 can be arranged in diode form to replace diodes D1 to D3 of power detection circuits 411 to 413. The other circuit arrangements and operation modes of power detection circuits 511 to 513 can be similar to those of power detection circuits 411 to 413, and the description thereof will not be repeated herein.

[0089] Please continue to refer to Figure 1 , the harmonic filter 12 can include N harmonic filters, and each harmonic filter is coupled to the corresponding power detector among the N power detectors.

[0090] The harmonic filter 121 may include a first harmonic resistor and a first harmonic capacitor. The first harmonic resistor receives the power detection voltage VDO1, and the first harmonic capacitor is coupled between the first harmonic resistor and the first reference voltage terminal to output a filtered voltage VDF1. The harmonic filter 121 may filter out the first and second harmonic components in the power detection voltage VDO1 to generate the filtered voltage VDF1. The filtered voltage VDF1 includes a static component and a variable component. The static component corresponds to the voltage generated by the power detection circuit 111 at a static bias (i.e., no input signal PDIN), and the variable component changes as the power of the input signal PDIN increases, reflecting the voltage change of the power detection circuit 111 for the input signal PDIN.

[0091] The harmonic filter 122 may include a second harmonic resistor and a second harmonic capacitor. The second harmonic resistor receives the power detection voltage VDO2, and the second harmonic capacitor is coupled between the second harmonic resistor and the first reference voltage terminal to output a filtered voltage VDF2. The harmonic filter 122 may filter out the first and second harmonic components in the power detection voltage VDO2 to generate the filtered voltage VDF2. The filtered voltage VDF2 includes a static component and a variable component. The static component corresponds to the voltage generated by the power detection circuit 112 at a static bias (i.e., no input signal PDIN), and the variable component changes as the power of the input signal PDIN increases, reflecting the voltage change of the power detection circuit 112 for the input signal PDIN.

[0092] The harmonic filter 123 may include a third harmonic resistor and a third harmonic capacitor. The third harmonic resistor receives the power detection voltage VDO3, and the third harmonic capacitor is coupled between the third harmonic resistor and the first reference voltage terminal to output a filtered voltage VDF3. The harmonic filter 123 may filter out the first and second harmonic components in the power detection voltage VDO3 to generate the filtered voltage VDF3. The filtered voltage VDF3 includes a static component and a variable component. The static component corresponds to the voltage generated by the power detection circuit 113 at a static bias (i.e., no input signal PDIN), and the variable component changes as the power of the input signal PDIN increases, reflecting the voltage change of the power detection circuit 113 for the input signal PDIN. In one embodiment, the harmonic filters 121, 122, 123 may be replaced by other suitable filters according to the designer's requirements.

[0093] Changing with the input signal PDIN. The filtered voltages VDF1 to VDF3 exhibit a piecewise continuous linear relationship in the low power range I, medium power range II, and high power range III. Specifically, as the power of the input signal PDIN increases, the negative DC voltage of the filtered voltage VDF1 / VDF2 / VDF3 decreases, indicating an inverse relationship between the power of the input signal PDIN and the filtered voltage VDF1 / VDF2 / VDF3.

[0094] Figure 6 It is a circuit schematic diagram of the group of voltage-current converters 14, temperature compensation circuit 15 and current-voltage converter 16.

[0095] The voltage-current converter 141 may include a resistor Rvi1, a capacitor Cvi1, a transistor M4 and a resistor Rvie1. The resistor Rvi1 includes a first end and a second end, and the first end is coupled to the harmonic filter 121 to receive the filtered voltage VDF1. The capacitor Cvi1 includes a first end and a second end, the first end is coupled to the second end of the resistor Rvi1; the second end is coupled to the first reference voltage terminal to receive the reference voltage VR. The transistor M4 includes a control end, a first end and a second end; the control end is coupled to the first end of the capacitor Cvi1; the first end is coupled to the current node 160. The resistor Rvie1 includes a first end and a second end, the first end is coupled to the second end of the transistor M4; the second end is coupled to the first reference voltage terminal to receive the reference voltage VR.

[0096] The voltage-current converter 142 may include a resistor Rvi2, a capacitor Cvi2, a transistor M5 and a resistor Rvie2. The resistor Rvi2 includes a first end and a second end, and the first end is coupled to the harmonic filter 122 to receive the filtered voltage VDF2. The capacitor Cvi2 includes a first end and a second end, the first end is coupled to the second end of the resistor Rvi2; the second end is coupled to the first reference voltage terminal to receive the reference voltage VR. The transistor M5 includes a control end, a first end and a second end; the control end is coupled to the first end of the capacitor Cvi2; the first end is coupled to the current node 160. The resistor Rvie2 includes a first end and a second end, the first end is coupled to the second end of the transistor M5; the second end is coupled to the first reference voltage terminal to receive the reference voltage VR.

[0097] The voltage-current converter 143 may include a resistor Rvi3, a capacitor Cvi3, a transistor M6 and a resistor Rvie3. The resistor Rvi3 includes a first end and a second end, and the first end is coupled to the harmonic filter 123 to receive the filtered voltage VDF3. The capacitor Cvi3 includes a first end and a second end, the first end is coupled to the second end of the resistor Rvi3; the second end is coupled to the first reference voltage terminal to receive the reference voltage VR. The transistor M6 includes a control end, a first end and a second end; the control end is coupled to the first end of the capacitor Cvi3; the first end is coupled to the current node 160. The resistor Rvie3 includes a first end and a second end, the first end is coupled to the second end of the transistor M6; the second end is coupled to the first reference voltage terminal to receive the reference voltage VR.

[0098] The resistor Rvi1 and capacitor Cvi1, resistor Rvi2 and capacitor Cvi2, and resistor Rvi3 and capacitor Cvi3 can respectively form low-pass filters for filtering the noise of the filtered voltages VDF1 to VDF3. These filtered voltages VDF1 to VDF3 are respectively output to the control terminals of transistors M4 to M6. In some embodiments, the resistor Rvi1 and capacitor Cvi1, resistor Rvi2 and capacitor Cvi2, and resistor Rvi3 and capacitor Cvi3 can be omitted from the voltage-current converters 141 to 143.

[0099] Figure 6 The voltage-current converters 141 to 143 respectively include emitter degeneration resistors Rvie1 to Rvie3, which can be used in conjunction with Figure 4 and Figure 5 this set of power detection circuits. The resistors Rvie1 to Rvie3 can serve as emitter degeneration resistors for respectively setting the minimum voltages of the filtered voltages VDF1 to VDF3. The transistors M4 to M6 can be bipolar junction transistors or metal-oxide-semiconductor field-effect transistors. If the transistors M4 to M6 are bipolar junction transistors, the transistors M4 to M6 can receive a bias voltage to operate in the active region.

[0100] The voltage-current converters 141 to 143 can respectively generate power detection currents IPD1 to IPD3 according to the filtered voltages VDF1 to VDF3, as shown in Formulas (2)-(4):

[0101] IPD1 = N4 * β * [(VDF1 - VBEM4) / (N4 * β * Rvie1 + Rvi1)] Formula (2)

[0102] IPD2 = N5 * β * [(VDF2 - VBEM5) / (N5 * β * Rvie2 + Rvi2)] Formula (3)

[0103] IPD3 = N6 * β * [(VDF3 - VBEM6) / (N6 * β * Rvie3 + Rvi3)] Formula (4)

[0104] where IPD1 to IPD3 are respectively the power detection currents generated by the voltage-current converters 141 to 143;

[0105] N4 to N6 are respectively the voltage-to-current conversion ratios of transistors M4, M5, and M6;

[0106] β is the gain of transistors M4, M5, and M6;

[0107] VBEM4 to VBEM6 are respectively the turn-on voltages of transistors M4, M5, and M6;

[0108] Rvie1, Rvie2, and Rvie3 are the resistance values of resistors Rvie1, Rvie2, and Rvie3 respectively; and

[0109] Rvi1, Rvi2, and Rvi3 are the resistance values of resistors Rvi1, Rvi2, and Rvi3 respectively.

[0110] According to Equation (2), the filtered voltage VDF1 and the power detection current IPD1 are positively correlated. In the low power range I, when the input signal PDIN increases, the filtered voltage VDF1 decreases accordingly, and the power detection current IPD1 also decreases. According to Equation (3), the filtered voltage VDF2 and the power detection current IPD2 are positively correlated. In the medium power range II, when the input signal PDIN increases, the filtered voltage VDF2 decreases accordingly, and the power detection current IPD2 also decreases. According to Equation (4), the filtered voltage VDF3 and the power detection current IPD3 are positively correlated. In the high power range III, when the input signal PDIN increases, the filtered voltage VDF3 decreases accordingly, and the power detection current IPD3 also decreases.

[0111] In some embodiments, the emitter degeneration resistors Rvie1 to Rvie3 can be omitted, and the power detection currents IPD1 to IPD3 can be expressed as in Equations (5)-(7):

[0112] IPD1 = N4 * β * [(VDF1 - VBEM4) / Rvi1] Equation (5)

[0113] IPD2 = N5 * β * [(VDF2 - VBEM5) / Rvi2] Equation (6)

[0114] IPD3 = N6 * β * [(VDF3 - VBEM6) / Rvi3] Equation (7)

[0115] The current-voltage conversion circuit 162 can include a resistor Riv and a capacitor Cfilter. The resistor Riv includes a first terminal and a second terminal. The first terminal is coupled to the second reference voltage terminal to receive the reference voltage VREF; the second terminal is coupled to the current node 160 to generate the summing voltage VSUM. The capacitor Cfilter includes a first terminal and a second terminal. The first terminal is coupled to the second terminal of the resistor Riv; the second terminal is coupled to the first reference voltage terminal to receive the reference voltage VR.

[0116] Since the power detection currents IPD1 to IPD3 all flow through the resistor Riv from the second reference voltage terminal, the summing voltage VSUM can be negatively correlated with the sum (IPD1 + IPD2 + IPD3) of the power detection currents IPD1 to IPD3, as Figure 7 shown. Figure 7It is the signal diagram of the group of voltage-current converters 14, where the horizontal axis represents the power of the input signal PDIN in dBm, and the vertical axis represents the sum of currents (IPD1 + IPD2 + IPD3) in amperes (A) and the sum of voltages VSUM in volts (V). When the power of the input signal PDIN gradually increases, the sum of the power detection currents IPD1 to IPD3 (IPD1 + IPD2 + IPD3) will decrease accordingly, causing the voltage across the resistor Riv to decrease. Since the reference voltage VREF remains fixed, the sum of voltages VSUM will increase accordingly.

[0117] Please continue to refer to Figure 6 , since the power detection device 1 is implemented using bipolar junction transistors and / or metal-oxide-semiconductor field-effect transistors, the sum of currents (IPD1 + IPD2 + IPD3) will vary with temperature. The temperature compensation circuit 15 can generate a temperature compensation current Itemp for temperature compensation.

[0118] The temperature compensation circuit 15 includes a resistor Rt and a group of compensation transistors Mt. The resistor Rt includes a first end and a second end, and the first end is coupled to the current-voltage conversion circuit 162. The group of compensation transistors Mt includes a control end, a first end, and a second end; the control end and the first end are coupled to the second end of the resistor Rt; the second end is coupled to the first reference voltage terminal to receive the reference voltage VR.

[0119] The group of compensation transistors Mt may include one or more compensation transistors Mt, and each compensation transistor Mt is arranged in the form of a diode. In Figure 6 , the group of compensation transistors Mt includes a compensation transistor Mt arranged in the form of a diode, and the turn-on voltage of the compensation transistor Mt can decrease as the temperature rises. For example, the temperature coefficient of the turn-on voltage of the compensation transistor Mt can be -2 mV / °C, that is, when the temperature rises by 1 degree Celsius, the turn-on voltage of the compensation transistor Mt will decrease by 2 millivolts, resulting in an increase in the voltage across the resistor Rt, and further causing an increase in the temperature compensation current Itemp. Since the increase in the temperature compensation current Itemp will reduce the sum of voltages VSUM / the power output signal PDOUT, the group of compensation transistors Mt can be regarded as a negative temperature coefficient element in the power detection device 1.

[0120] In some embodiments, the set of compensation transistors Mt may include a plurality of stacked compensation transistors Mt. The plurality of stacked compensation transistors Mt includes a first end and a second end. The first end is coupled to the second end of the compensation resistor Rt; the second end is coupled to the first reference voltage terminal for receiving the reference voltage VR. Specifically, each compensation transistor Mt of the plurality of stacked compensation transistors Mt includes a control end, a first end, and a second end. The first end of the compensation transistor Mt is coupled to the control end of the compensation transistor Mt; the second end is coupled to the first end of the next stacked compensation transistor Mt. When the temperature rises, the decrease in the total turn-on voltage of the plurality of stacked compensation transistors Mt will exceed that of a single compensation transistor Mt, further increasing the voltage across the resistor Rt, resulting in a further increase in the temperature compensation current Itemp, and further reducing the total voltage VSUM / power output signal PDOUT, achieving the effect of increased temperature compensation.

[0121] Figure 8 It is another circuit schematic diagram of the set of voltage-current converters 14, temperature compensation circuit 15, and current-voltage converter 16. Figure 8 The circuit elements of are similar to Figure 6 , but a set of compensation diodes Dt is used in the temperature compensation circuit 85 instead of Figure 6 the set of compensation transistors Mt in. The following details the set of compensation diodes Dt in Figure 8 . The descriptions of other circuit elements can refer to the foregoing paragraphs and will not be repeated here.

[0122] The set of compensation diodes Dt includes a first end and a second end. The first end is coupled to the second end of the resistor Rt; the second end is coupled to the first reference voltage terminal for receiving the reference voltage VR. In one embodiment, the first end of the compensation diode Dt is the anode and the second end is the cathode. In one embodiment, the set of compensation diodes Dt may include one or more compensation diodes Dt. In Figure 8 , the set of compensation diodes Dt includes one compensation diode Dt, and the turn-on voltage VDt of the compensation diode Dt can decrease as the temperature rises. For example, the temperature coefficient of the turn-on voltage VDt of the compensation diode Dt can be -2 mV / °C, that is, when the temperature rises by 1 degree Celsius, the turn-on voltage VDt of the compensation diode Dt will decrease by 2 millivolts, resulting in an increase in the voltage across the resistor Rt, and then causing an increase in the temperature compensation current Itemp. Since the increase in the temperature compensation current Itemp will reduce the total voltage VSUM / power output signal PDOUT, the set of compensation diodes Dt can be regarded as a negative temperature coefficient element in the power detection device 1.

[0123] In some embodiments, the set of compensation diodes Dt may include a plurality of serially connected compensation diodes Dt, including a first end and a second end. The first end is coupled to the second end of the compensation resistor Rt; the second end is coupled to the first reference voltage terminal for receiving the reference voltage VR. Each compensation diode Dt includes a first end (anode) and a second end (cathode). When the temperature rises, the decrease in the total turn-on voltage of the plurality of serially connected compensation diodes Dt will exceed that of a single compensation diode Dt, further increasing the voltage across the resistor Rt, resulting in a further increase in the temperature compensation current Itemp, and further reducing the total voltage VSUM / power output signal PDOUT, achieving the effect of increased temperature compensation.

[0124] Figure 9 It is another circuit schematic diagram of the set of voltage-current converters 14, temperature compensation circuit 15, and current-voltage converter 16. Figure 9 The circuit elements are similar to Figure 6 , but another set of compensation diodes Dt is further included in the temperature compensation circuit 95. The set of compensation diodes Dt and the set of compensation transistors Mt are serially connected to each other. In Figure 9 , the set of compensation diodes Dt includes one compensation diode Dt, and the set of compensation transistors Mt may include one compensation transistor Mt. The turn-on voltages of both the compensation diode Dt and the compensation transistor Mt can decrease as the temperature rises. When the temperature rises, the turn-on voltages of both the compensation diode Dt and the compensation transistor Mt will decrease, resulting in an increase in the voltage across the resistor Rt, and then causing an increase in the temperature compensation current Itemp, and reducing the total voltage VSUM / power output signal PDOUT. Therefore, both the set of compensation transistors Mt and the set of compensation diodes Dt can be regarded as negative temperature coefficient elements in the power detection device 1. In one embodiment, Figure 9 the set of compensation transistors Mt in Figure 9 can be directly coupled to the set of compensation diodes Dt. In one embodiment, the compensation resistor Rt, the set of compensation diodes Dt, and the set of compensation transistors Mt can be serially connected in sequence as

[0125] Figure 10 It is Figure 1 a circuit schematic diagram of the envelope detector 18 in Figure 10, the set of conversion transistors Me includes a conversion transistor Me. The conversion transistor Me includes a control terminal, a first terminal, and a second terminal. The control terminal is used to receive the sum voltage VSUM. In some embodiments, the set of conversion transistors Me may include a plurality of conversion transistors Me connected in parallel with each other, where each conversion transistor Me includes a control terminal, a first terminal, and a second terminal. The control terminal is used to receive the sum voltage VSUM; the first terminal is coupled to the first terminal of the conversion transistor Me; the second terminal is coupled to the second terminal of the conversion transistor Me. The set of conversion transistors Me can receive a bias voltage to operate in the active region. The potential converter 181 can also serve as a unity gain buffer. The conversion transistor Me can be arranged in a common collector configuration to provide a high input impedance and a low output impedance, and at the same time subtract the turn-on voltage of the conversion transistor Me from the sum voltage VSUM to generate a conversion voltage, thereby achieving potential conversion and effectively isolating the circuit.

[0126] The resistor Re includes a first terminal and a second terminal. The first terminal is coupled to the second terminal of the set of conversion transistors Me; the second terminal is coupled to a first reference voltage terminal to receive the reference voltage VR. The capacitor Ce includes a first terminal and a second terminal. The first terminal is coupled to the first terminal of the resistor Re to receive the conversion voltage; and the second terminal is coupled to the first reference voltage terminal to receive the reference voltage VR. The capacitor Ce can filter out the ripple in the conversion voltage to generate a filtered signal, and the filtered signal can still include an envelope component. The magnitude of the envelope component in the conversion voltage can be positively correlated with the magnitude of the input signal PDIN. The larger the input signal PDIN, the larger the envelope component in the conversion voltage.

[0127] In some embodiments, the set of conversion transistors Me can be replaced by a set of conversion diodes. The set of conversion diodes can include a first terminal and a second terminal. The first terminal is used to receive the sum voltage VSUM; the second terminal is coupled to the first terminal of the resistor Re and the first terminal of the capacitor Ce. The set of conversion diodes can include one or more parallel conversion diodes.

[0128] The potential converter 181 can further include a noise filter 90, which includes a first terminal and a second terminal. The first terminal is coupled to a second reference voltage terminal to receive the reference voltage VREF; the second terminal is coupled to the first terminal of the conversion transistor Me. The noise filter 90 includes a resistor Rn and a capacitor Cn. The resistor Rn includes a first terminal and a second terminal. The first terminal is coupled to the second reference voltage terminal to receive the reference voltage VREF; the second terminal is coupled to the set of conversion transistors Me. The capacitor Cn includes a first terminal and a second terminal. The first terminal is coupled to the first terminal of the set of conversion transistors Me; the second terminal is coupled to the first reference voltage terminal to receive the reference voltage VR. The noise filter 90 can filter out the noise in the reference voltage VREF. In some embodiments, the noise filter 90 can be omitted.

[0129] The low-pass filter 182 in the envelope detector 18 may include a resistor Rbf1 and a capacitor C1bf1. The resistor Rbf1 includes a first end and a second end, and the first end is used to receive a filtered signal. The capacitor Cbf1 includes a first end and a second end, the first end is coupled to the second end of the resistor Rbf1; and the second end is coupled to a first reference voltage terminal for receiving a reference voltage VR. The low-pass filter 182 can filter out the envelope component in the conversion voltage to generate a DC output voltage.

[0130] The envelope detector 18 may further include an output capacitor Cbf2. The capacitor Cbf2 includes a first end and a second end, the first end is coupled to the first end of the capacitor Cbf1; the second end is coupled to a first reference voltage terminal for receiving a reference voltage VR. The capacitor Cbf2 can receive the DC output voltage via a bonding wire and regulate the DC output voltage to generate a power output signal PDOUT.

[0131] Figure 11 is Figure 1 Another circuit schematic diagram of the envelope detector 18 in Figure 11 The circuit elements of Figure 10 are similar to Figure 11 , but further includes at least one stacked transistor Md. The following details a single stacked transistor Md in Figure 11 . For the description of other circuit elements, reference can be made to the foregoing paragraphs and will not be elaborated herein. The stacked transistor Md includes a control terminal, a first end and a second end; the first end is coupled to the second end of the set of conversion transistors Me and the control terminal of the stacked transistor Md; and the second end is coupled to the first end of the resistor Re. Figure 11 Only one stacked transistor Md is shown, but the present invention is not limited thereto. Those skilled in the art can change the number of stacked transistors Md according to actual needs. In some embodiments, the number of stacked transistors Md may be greater than 1, and each stacked transistor Md includes a control terminal, a first end and a second end; the first end is coupled to the control terminal of each stacked transistor Md; and the second end is coupled to the first end of the next stacked transistor.

[0132] The set of conversion transistors Me and the stacked transistor Md in the envelope detector 18 and the set of compensation transistors Mt in the temperature compensation circuit 15 are all bipolar junction transistors. Therefore, the set of conversion transistors Me, the stacked transistor Md, the compensation transistors Mt and the compensation diode Dt all have the same temperature coefficient, so that the negative temperature coefficient of the total voltage VSUM of the temperature compensation circuit 15 can be achieved to compensate for the temperature drift of the power output signal PDOUT.

[0133] The number of stacked transistors Md in the envelope detector 18 may be equal to the number of compensation transistors Mt or compensation diodes Dt in the temperature compensation circuit 15 minus one, or may be equal to the total number of compensation transistors Mt and compensation diodes Dt in the temperature compensation circuit 15 minus one. For example, if the power detection device 1 simultaneously employs Figure 6 's temperature compensation circuit 15 and Figure 11 's envelope detector 18, and Figure 6 the number of compensation transistors Mt is 2, then Figure 11 the number of stacked transistors Md may be 1. Similarly, if the power detection device 1 simultaneously employs Figure 8 's temperature compensation circuit 15 and Figure 11 's envelope detector 18, and Figure 8 the number of compensation diodes Dt is 2, then Figure 11 the number of stacked transistors Md may be 1. If the power detection device 1 simultaneously employs Figure 9 's temperature compensation circuit 15 and Figure 11 's envelope detector 18, and Figure 9 the total number of compensation transistors Mt and compensation diodes Dt is 2 (= 1 + 1), then Figure 11 the number of stacked transistors Md may be 1. In one embodiment, Figure 11 the set of switching transistors Me may be directly coupled to the stacked transistor Md. Since the number of PN junction devices (compensation transistors Mt and / or compensation diodes Dt) in the temperature compensation circuit is the same as the number of PN junction devices (switching transistors Me and stacked transistors Md) in the envelope detector 18, the power detection device 1 can achieve accurate temperature drift compensation.

[0134] Figure 12 is Figure 1 another circuit schematic diagram of the envelope detector 18 in Figure 12 The circuit elements of Figure 10 are similar to Figure 12 , but further includes at least one series diode D. The following details the single series diode D in Figure 12 . The description of other circuit elements can refer to the previous paragraphs and will not be repeated here. The series diode D includes a first end and a second end. The first end is coupled to the second end of the set of switching transistors Me; the second end is coupled to the first end of the resistor Re. Figure 12 Only one series diode D is shown, but the present invention is not limited thereto. Those skilled in the art can change the number of series diodes D according to actual needs. In some embodiments, the number of series diodes D may be greater than 1. In one embodiment, the set of switching transistors Me in the potential converter 181 may be directly coupled to the stacked transistor Md and / or the series diode D.

[0135] The number of series diodes D in the envelope detector 18 may be equal to the number of compensation transistors Mt or compensation diodes Dt in the temperature compensation circuit 15 minus one, or may be equal to the total number of compensation transistors Mt and compensation diodes Dt in the temperature compensation circuit 15 minus one. For example, if the power detection device 1 simultaneously employs Figure 6 's temperature compensation circuit 15 and Figure 12 's envelope detector 18, and Figure 6 the number of compensation transistors Mt therein is 2, then Figure 12 the number of series diodes D therein may be 1. Similarly, if the power detection device 1 simultaneously employs Figure 8 's temperature compensation circuit 15 and Figure 12 's envelope detector 18, and Figure 8 the number of compensation diodes Dt therein is 2, then Figure 12 the number of series diodes D therein may be 1. If the power detection device 1 simultaneously employs Figure 9 's temperature compensation circuit 15 and Figure 12 's envelope detector 18, and Figure 9 the total number of compensation transistors Mt and compensation diodes Dt therein is 2 (= 1 + 1), then Figure 12 the number of series diodes D therein may be 1. Since the number of PN junction devices (compensation transistors Mt and / or compensation diodes Dt) in the temperature compensation circuit is the same as the number of PN junction devices (conversion transistor Me and series diodes D) in the envelope detector 18, the power detection device 1 can achieve accurate temperature drift compensation.

[0136] Figure 13 is a block diagram of a power amplifier circuit 13 in an embodiment of the present invention. The power amplifier circuit 13 can receive an input signal PIN, amplify the power, and generate an output signal POUT for signal transmission. The power amplifier circuit 13 may include bias circuits B1 to B3, matching circuits MC1 to MC4, and power amplifiers PA1 to PA3. The bias circuit B1 and the matching circuit MC1 may be coupled to the power amplifier PA1, the power amplifier PA1 may be coupled to the matching circuit MC2, the bias circuit B2 and the matching circuit MC2 may be coupled to the power amplifier PA2, the power amplifier PA2 may be coupled to the matching circuit MC3, the bias circuit B3 and the matching circuit MC3 may be coupled to the power amplifier PA3, and the power amplifier PA3 may be coupled to the matching circuit MC4. The bias circuits B1 to B3 may respectively provide bias voltages to the power amplifiers PA1 to PA3 according to the reference voltage VCCB to maintain the normal operation of the power amplifiers PA1 to PA3. The power amplifiers PA1 to PA3 may respectively drive the output signal according to the supply voltages VCC1 to VCC3. The matching circuits MC1 to MC4 may provide impedance matching for the front and rear two-stage circuits, increase power transmission, reduce reflection loss, and avoid signal distortion and performance degradation.

[0137] The power detection device 1 can be coupled to the input end of the power amplifier PA3 to receive the input signal of the power amplifier PA3 as the input signal PDIN, and detect the power of the input signal PDIN to generate a power output signal PDOUT. Since the input signal PDIN is isolated by the power amplifier PA3, the influence of signal reflection caused by impedance mismatch can be reduced, thereby improving the accuracy of power detection. In some embodiments, the power amplifier circuit 13 can adjust the power amplifiers PA1 to PA3 (such as gain) according to the power output signal PDOUT to increase the linearity of the power amplifiers PA1 to PA3. The power detection device 1 is not limited to being coupled to the input end of the power amplifier PA3, and can also be coupled to other signal ends of the power amplifiers PA1 to PA3, such as the input end or output end of the power amplifier PA1, the input end or output end of the power amplifier PA2, or the output end of the power amplifier PA3.

[0138] The bias circuits B1 to B3 and the power detection device 1 can be coupled to the second reference voltage terminal to receive the reference signal VREF, so as to synchronously enable or disable the power amplifier circuit 13 and the power detection device 1 according to the reference signal VREF. When the reference signal VREF is set to the on state, the amplifier circuit 13 and the power detection device 1 can be synchronously enabled to detect the power of the input signal PDIN. When the reference signal VREF is set to the off state, the amplifier circuit 13 and the power detection device 1 can be synchronously disabled to reduce power consumption.

[0139] The power detection device disclosed in the embodiments of the present invention uses a temperature compensation circuit for temperature compensation to generate a power output signal that does not substantially change with temperature or only changes slightly, thereby improving the correctness of power detection. In addition, the number of PN junction devices in the temperature compensation circuit of the power detection device disclosed in the embodiments of the present invention is the same as that in the envelope detector, so as to accurately compensate the temperature drift of the power output signal.

[0140] The above are only the preferred embodiments of the present invention, and all equivalent changes and modifications made according to the claims of the present invention shall fall within the scope of the present invention.

Claims

1. A power detection device, characterized in that: include: A power detector is used to generate a power detection voltage according to an input signal; A set of voltage-to-current converters, coupled to the set of power detectors, for generating a set of power detection currents according to the set of power detection voltages; A temperature compensation circuit, comprising a set of compensation diodes and / or a set of compensation transistors, for generating a temperature compensation current according to a temperature; a current-to-voltage converter coupled to the set of voltage-to-current converters and the temperature compensation circuit, for summing the set of power detection currents and the temperature compensation current to generate a summed current, and converting the summed current into a summed voltage; and A potential converter is coupled to the current-voltage converter and includes a group of conversion transistors for receiving the summed voltage to generate a power output voltage.

2. The power detection device according to claim 1, characterized in that: The PN junctions of the group of compensation diodes and / or the group of compensation transistors and the group of conversion transistors have the same material, and the group of compensation diodes and / or the group of compensation transistors generate the temperature compensation current through the PN junctions.

3. The power detection device according to claim 1, characterized in that: The temperature compensation current has a positive temperature coefficient, and the sum voltage has a negative temperature coefficient.

4. The power detection device according to claim 1, characterized in that: The temperature compensation circuit further includes a resistor, wherein the resistor includes a first end coupled to the current-voltage converter; and a second end; and The set of compensation diodes includes a first terminal coupled to the second terminal of the resistor; and a second terminal coupled to a first reference voltage terminal; or The group of compensation transistors includes a control terminal, a first terminal coupled to the control terminal and the second terminal of the resistor, and a second terminal coupled to the first reference voltage terminal.

5. The power detection device according to claim 1, characterized in that: The group of conversion transistors of the potential converter generates a conversion voltage according to the sum voltage.

6. The power detection device according to claim 1, characterized in that: The group of conversion transistors includes a control terminal for receiving the summed voltage; a first terminal; and a second terminal; and The potential converter further comprises a resistor, comprising a first end coupled to the second end of the set of conversion transistors for outputting the power output voltage; and a second end coupled to a first reference voltage end.

7. The power detection device according to claim 1, characterized in that: The group of conversion transistors includes a control terminal for receiving the summed voltage; a first terminal; and a second terminal; and The potential converter further comprises: a resistor, comprising a first terminal for outputting the power output voltage; and a second terminal coupled to a first reference voltage terminal; and At least one cascaded transistor includes a first end coupled to the second end of the group of conversion transistors; and a second end coupled to the first end of the resistor, wherein each of the at least one cascaded transistor includes a control end; a first end coupled to the control end of each; and a second end.

8. The power detection device according to claim 1, characterized in that: The group of conversion transistors includes a control terminal for receiving the summed voltage; a first terminal; and a second terminal; and The potential converter further comprises: a resistor, comprising a first terminal for outputting the power output voltage; and a second terminal coupled to a first reference voltage terminal; and At least one series-connected diode includes a first end coupled to the second end of the group of conversion transistors; and a second end coupled to the first end of the resistor.

9. The power detection device according to any one of claims 7 or 8, characterized in that: The temperature compensation circuit further includes a compensation resistor including a first end coupled to the current-voltage converter; and a second end; The group of compensation transistors includes a plurality of cascaded compensation transistors, including a first terminal coupled to the second terminal of the compensation resistor; and a second terminal coupled to the first reference voltage terminal, wherein each compensation transistor includes a control terminal; a first terminal coupled to the control terminal of each compensation transistor; and a second terminal; and A number of the at least one cascaded transistor or a number of the at least one series-connected diode is equal to a number of the plurality of cascaded compensation transistors minus one.

10. The power detection device according to claim 9, characterized in that: The plurality of cascaded compensation transistors and the group of conversion transistors are both bipolar junction transistors.

11. The power detection device according to any one of claims 7 or 8, characterized in that: The temperature compensation circuit further includes a compensation resistor including a first end coupled to the current-voltage converter; and a second end; The group of compensation diodes includes a plurality of compensation diodes connected in series, including a first end coupled to the second end of the compensation resistor; and a second end coupled to the first reference voltage end; and A number of the at least one cascaded transistor or a number of the at least one series-connected diode is equal to a number of compensation diodes of the plurality of series-connected sets of compensation diodes minus one.

12. The power detection device according to any one of claims 7 or 8, characterized in that: The temperature compensation circuit includes the group of compensation diodes and the group of compensation transistors connected in series with each other; The temperature compensation circuit further includes a compensation resistor including a first end coupled to the current-voltage converter; and a second end; Each compensation diode in the set of compensation diodes includes a first end and a second end; Each compensation transistor in the group of compensation transistors includes a control terminal; a first terminal coupled to the control terminal of each compensation transistor; and a second terminal; and The number of the at least one cascaded transistor or the number of the at least one series-connected diode is equal to the total number of compensation diodes in the group of compensation diodes and the total number of compensation transistors in the group of compensation transistors minus one.

13. The power detection device according to claim 1, characterized in that: The group of conversion transistors includes a plurality of conversion transistors connected in parallel, wherein each conversion transistor includes a control terminal for receiving the summed voltage; a first terminal; and a second terminal; and The potential converter further comprises a resistor, comprising a first end coupled to the second end of each conversion transistor for outputting the power output voltage; and a second end coupled to a first reference voltage end.

14. The power detection device according to claim 1, characterized in that: The temperature compensation circuit further includes a resistor, including a first end coupled to the current-to-voltage converter; and a second end; and The group of compensation transistors includes a plurality of compensation transistors connected in parallel, wherein each compensation transistor includes a control terminal; a first terminal coupled to the second terminal of the resistor and the control terminal of each compensation transistor; and a second terminal coupled to a first reference voltage terminal.

15. The power detection device according to claim 1, characterized in that: The temperature compensation circuit further includes a resistor, including a first end coupled to the current-to-voltage converter; and a second end; and The group of compensation diodes includes a plurality of compensation diodes connected in parallel with each other, wherein each compensation diode includes a first end coupled to the second end of the resistor; and a second end coupled to a first reference voltage end.

16. The power detection device according to claim 1, characterized in that: The potential converter further comprises: a noise filter, comprising a first terminal coupled to a second reference voltage terminal; and a second terminal coupled to the set of conversion transistors.

17. The power detection device according to claim 16, characterized in that: The noise filter further comprises: a resistor, comprising a first terminal coupled to the second reference voltage terminal; and a second terminal coupled to the set of switching transistors; and A capacitor includes a first terminal coupled to the group of conversion transistors; and a second terminal coupled to a first reference voltage terminal.

18. The power detection device according to claim 1, characterized in that: The power detector is further coupled to a power amplifier circuit for receiving the input signal from the power amplifier circuit; and The power amplifier circuit and the power detector group receive a second reference voltage for synchronously disabling the power amplifier circuit and the power detector group according to the second reference voltage.

19. The power detection device according to claim 1, characterized in that: The power detector group includes N power detectors for generating N power detection voltages according to the input signal, each power detector includes an attenuator for determining a power detection voltage generated by each power detector, wherein At least two attenuators are connected in parallel with each other and at least two attenuators are connected in series with each other; The set of voltage-to-current converters includes N voltage-to-current converters, each of which is coupled to a corresponding power detector among the N power detectors and is used to generate a power detection current at least according to a power detection voltage of the corresponding power detector; and The current-to-voltage converter is used for summing up the N power detection currents of the N voltage-to-current converters and the temperature compensation current to generate the summed current, and converting the summed current into the summed voltage.

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