Wafer position calibration device and method, calibration chamber and semiconductor process equipment

Abstract

The invention provides a wafer position calibration device and method, a calibration chamber and semiconductor process equipment. The device comprises a base for bearing a wafer; the multiple deviation detection sensors are distributed in the circumferential direction of the base at intervals and can synchronously move in the radial direction of the base; the plurality of deviation detection sensors are used for transmitting detection signals to the base, and an area commonly defined by intersection points of the detection signals transmitted by the plurality of deviation detection sensors and a plane where the bearing surface of the base is located is a detection area; the plurality of deviation detection sensors are used for detecting whether the wafer on the base coincides with or exceeds the boundary of the detection area, and / or detecting the direction of the wafer deviating from the detection area. According to the scheme, the problem that the position of the wafer cannot be identified due to the fact that the offset of the wafer exceeds the calibration range can be solved, and the phenomenon of wafer throwing can be avoided.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor process equipment, and in particular, to a wafer position calibration device, method, calibration chamber, and semiconductor process equipment. Background Art

[0002] With the rapid development of the semiconductor industry, the requirements for the production capacity and precision of semiconductor process equipment for processing wafers in the semiconductor industry have gradually increased. Therefore, the requirements for the precision and stability of wafer transfer have also increased accordingly.

[0003] During the process of transferring wafers, the wafers need to be sent one by one from the cassette to the designated process chamber by the manipulator in the transfer platform equipped with them. Since the wafer transfer precision is affected by various factors, such as the station calibration deviation of the manipulator, the position deviation of the wafer in the cassette, and the difficulty in keeping the placement direction of the wafer feature points (such as flat edges) in the cassette consistent, and there are certain error limits for the loading devices such as electrostatic chucks in the process chamber, etc. After the manipulator takes out the wafers in the cassette, it is usually necessary to first send the wafers to the rotating base of the wafer position calibration device for calibration of the wafer position and direction.

[0004] However, when the existing wafer position calibration device corrects the wafer position, it is easy to have the problem that the wafer position cannot be recognized because the wafer offset exceeds the calibration range, which may cause the machine to alarm and shut down, affecting the production capacity; and sometimes, there will also be a phenomenon of wafer throwing due to excessive wafer offset when the base rotates, which is likely to cause wafer damage. Summary of the Invention

[0005] The present invention aims to at least solve one of the technical problems existing in the prior art, and provides a wafer position calibration device, method, calibration chamber, and semiconductor process equipment, which can not only solve the problem that the wafer position cannot be recognized because the wafer offset exceeds the calibration range, but also avoid the phenomenon of wafer throwing.

[0006] To achieve the above object, as one aspect of the present invention, a wafer position calibration device is provided, including:

[0007] A base for carrying a wafer;

[0008] A plurality of deviation detection sensors, which are distributed at intervals along the circumferential direction of the base and can move synchronously along the radial direction of the base; the plurality of deviation detection sensors are used for emitting detection signals towards the base, and the region defined by the intersection points of the detection signals emitted by the plurality of deviation detection sensors and the plane where the bearing surface of the base is located is the detection region; the plurality of deviation detection sensors are used for detecting whether the wafer on the base coincides with or exceeds the boundary of the detection region, and / or detecting the direction in which the wafer deviates from the detection region.

[0009] Optionally, it further includes a plurality of link rods, a plurality of guiding components and a lifting driving component. Among them, the plurality of guiding components are distributed at intervals along the circumferential direction of the base. Each guiding component includes a guide rail extending along the radial direction of the base and a sliding member capable of sliding relative to the guide rail;

[0010] The first ends of the plurality of link rods are respectively hinged to the sliding members in the plurality of guiding components; the plurality of deviation detection sensors are respectively fixed on the plurality of sliding members; the second ends of the plurality of link rods are all hinged to the lifting driving component;

[0011] The lifting driving component is used to drive the second ends of the plurality of link rods to lift, so that the plurality of link rods can respectively drive the plurality of sliding members and the deviation detection sensors thereon to move synchronously along the radial direction of the base.

[0012] Optionally, the lifting driving component includes a rotary driving member and a transmission structure. Among them, the rotary driving member is used to provide rotary power; the transmission structure is respectively connected to the rotary driving member and the second ends of the plurality of link rods, and is used to convert the rotary power into a lifting motion and transmit it to the second ends of the plurality of link rods.

[0013] Optionally, the rotary driving member includes a rotary motor with an encoder; the encoder is used to detect the rotation angle of the driving shaft of the rotary motor.

[0014] Optionally, the lifting driving component further includes a fixing member extending in the vertical direction and two limit sensors. Among them, a triggering member is arranged on the transmission structure; the two limit sensors are oppositely arranged on the fixing member in the vertical direction, and the signals output by the limit sensors can change when the triggering member passes through the height where the limit sensors are located.

[0015] Optionally, each deviation detection sensor includes a signal transceiver and a signal reflector. Among them, the signal transceiver is located at a position lower than the bearing surface of the base and can move synchronously along the radial direction of the base, and the signal reflector is located at a position higher than the bearing surface of the base and corresponds to the area where the moving track of the signal transceiver is located;

[0016] The signal transceiver is used to transmit the detection signal to the corresponding signal reflector; the signal reflector is used to reflect the detection signal, and the signal transceiver is further used to determine the wafer position offset when it does not receive the reflected signal reflected by the signal reflector from the detection signal.

[0017] Optionally, the base can rotate;

[0018] The wafer position calibration device further includes a wafer detection component, which includes a transmitter and a receiver. Both the transmitter and the receiver are located outside the edge of the bearing surface of the base and on both sides of the bearing surface in the vertical direction. Among them,

[0019] The transmitter is used to emit an imaging signal towards the receiver; the receiver is used to receive the imaging signal not blocked by the wafer on the base to generate an image of the shape of the wafer edge.

[0020] Optionally, it further includes: a controller;

[0021] The controller includes at least one processor and a storage device, and at least one program is stored on the storage device; when the at least one program is executed by the at least one processor, the at least one processor implements a wafer position calibration method, and the wafer position calibration method includes:

[0022] According to a preset wafer position deviation value, control a plurality of the deviation detection sensors to move synchronously along the radius of the base so that the radius of the detection area is equal to the sum of the radius of the wafer and the wafer position deviation value;

[0023] According to the detection results of a plurality of the deviation detection sensors, determine whether the wafer on the base coincides with or exceeds the boundary of the detection area;

[0024] In the case where the wafer on the base coincides with or exceeds the boundary of the detection area, move the wafer into the detection area.

[0025] Optionally, in the case where the wafer on the base coincides with or exceeds the boundary of the detection area, moving the wafer into the detection area includes:

[0026] According to the detection results of a plurality of the deviation detection sensors, determine the offset direction of the wafer, and set the wafer position deviation amount to the wafer position deviation value;

[0027] According to the offset direction of the wafer and the wafer position deviation value, adjust the wafer picking position of the manipulator so that the wafer picking position is offset in the direction opposite to the offset direction of the wafer relative to the center of the bearing surface of the base, and the offset amount is equal to the wafer position deviation value;

[0028] Control the manipulator to pick up the wafer from the adjusted wafer picking position;

[0029] Control the manipulator to place the wafer on the base again from the wafer picking position before adjustment;

[0030] Based on the detection results of multiple deviation detection sensors, determine whether the wafer on the base coincides with or exceeds the boundary of the detection area.

[0031] Optionally, the controller is further configured to:

[0032] When the number of times the wafer is placed on the base is greater than or equal to a preset number of times, send an alarm signal.

[0033] Optionally, the base is rotatable; the wafer position calibration device further includes a wafer detection component, the wafer detection component includes a transmitter and a receiver, both the transmitter and the receiver are located outside the edge of the bearing surface of the base, and are located on both sides of the bearing surface in the vertical direction; wherein, the transmitter is used to emit an imaging signal towards the receiver; the receiver is used to receive the imaging signal not blocked by the wafer on the base to generate an image of the wafer edge shape;

[0034] The controller is further configured to:

[0035] When the wafer on the base is located inside the boundary of the detection area, control the base to drive the wafer to rotate, and control the wafer detection component to detect and obtain an image of the wafer edge shape;

[0036] Determine the position deviation amount of the center of the wafer relative to the center of the bearing surface of the base and / or the position of the characteristic points of the wafer according to the detection results of the wafer detection component.

[0037] Optionally, the controller is further configured to:

[0038] Calibrate the wafer picking position of the manipulator according to the position deviation amount of the wafer;

[0039] Control the manipulator to pick up the wafer from the calibrated wafer picking position.

[0040] Optionally, the controller is further configured to:

[0041] Control the rotation of the base according to the position of the characteristic points of the wafer, so that the position of the characteristic points of the wafer is at a specified angular position.

[0042] As another aspect of the present invention, there is also provided a calibration chamber, including a chamber body, and further including the above-mentioned wafer position calibration device provided by the present invention;

[0043] The base is disposed in the chamber body, a plurality of the deviation detection sensors are disposed outside the chamber body, and a transparent window is provided on the chamber body corresponding to the movement trajectory coverage area of the plurality of deviation detection sensors.

[0044] As another aspect of the present invention, there is also provided a semiconductor processing apparatus, which includes a transfer chamber, a calibration chamber and a processing chamber connected to the transfer chamber. A manipulator is provided in the transfer chamber for transferring a wafer into the calibration chamber to calibrate the wafer picking position of the manipulator, taking out the wafer from the calibrated wafer picking position, and transferring it into the processing chamber for processing. The calibration chamber adopts the above-mentioned calibration chamber provided by the present invention.

[0045] As another aspect of the present invention, there is also provided a wafer position calibration method, which is applied to the above-mentioned wafer position calibration device provided by the present invention; the wafer position calibration method includes:

[0046] According to a preset wafer position deviation value, controlling a plurality of the deviation detection sensors to synchronously move along the radial direction of the base so that the radius of the detection area is equal to the sum of the radius of the wafer and the wafer position deviation value;

[0047] According to the detection results of the plurality of deviation detection sensors, determining whether the wafer on the base coincides with or exceeds the boundary of the detection area;

[0048] In the case where the wafer on the base coincides with or exceeds the boundary of the detection area, moving the wafer into the detection area.

[0049] The present invention has the following beneficial effects:

[0050] The wafer position calibration device and method provided by the present invention can utilize a plurality of deviation detection sensors that are circumferentially spaced apart along the base. By synchronously moving along the radius of the base, the boundary size of the detection areas of the plurality of deviation detection sensors can be adjusted, so that the adjusted detection area can meet a preset condition (for example, the radius of the adjusted detection area is equal to the sum of the radius of the wafer and the required restricted wafer position deviation). Moreover, by adjusting the boundary size of the above detection area, various different preset conditions can also be met, thereby expanding the application scenarios of the device. On this basis, by using a plurality of deviation detection sensors to detect whether the wafer on the base coincides with or exceeds the boundary of the detection area, and / or to detect the direction in which the wafer deviates from the detection area, it is possible to judge whether the wafer on the base coincides with or exceeds the boundary of the detection area according to the detection results of the plurality of deviation detection sensors. And when the wafer on the base coincides with or exceeds the boundary of the detection area, the wafer is moved into the detection area. That is, the wafer position can be corrected according to the detection results of the plurality of deviation detection sensors to ensure that the wafer on the base is completely located within the detection area that meets the above preset conditions, so that the offset amount of the wafer located within the detection area will not exceed the allowable value. That is, the wafer offset amount can be controlled within an allowable range, and this allowable range can be set, for example, to ensure that there is no wafer flinging phenomenon due to excessive wafer offset amount when the base rotates, and / or to ensure that there is no problem of being unable to identify the wafer position due to the wafer offset amount exceeding the calibration range. Furthermore, the incidence of calibration failure can be reduced, the safety of the wafer calibration process can be improved, and the situation of the machine alarm and downtime can be reduced, thereby improving the production capacity.

[0051] The calibration chamber provided by the present invention can reduce the incidence of calibration failure, improve the safety of the wafer calibration process, reduce the situation of machine alarm and downtime, and improve the production capacity by adopting the above-mentioned wafer position calibration device provided by the present invention.

[0052] The semiconductor process equipment provided by the present invention can reduce the incidence of calibration failure, improve the safety of the wafer calibration process, reduce the situation of machine alarm and downtime, and improve the production capacity by adopting the above-mentioned calibration chamber provided by the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] The drawings are used to provide a further understanding of the present invention and constitute a part of the specification. They are used together with the following specific embodiments to explain the present invention, but do not constitute a limitation to the present invention. In the drawings:

[0054] Figure 1 It is a chamber distribution diagram of the semiconductor process equipment provided by the embodiment of the present invention;

[0055] Figure 2Partial cross-sectional view of the calibration chamber provided by an embodiment of the present invention;

[0056] Figure 3 Top view of the wafer position calibration device provided by an embodiment of the present invention;

[0057] Figure 4 Side view of the wafer position calibration device provided by an embodiment of the present invention;

[0058] Figure 5 Position relationship diagram of two limit sensors and a deviation detection sensor adopted by an embodiment of the present invention;

[0059] Figure 6 Dimension relationship diagram of the detection area of the wafer position calibration device provided by an embodiment of the present invention;

[0060] Figure 7 Dimension relationship diagram of the wafer position calibration device at different positions provided by an embodiment of the present invention;

[0061] Figure 8 Principle block diagram of the wafer position calibration device provided by an embodiment of the present invention;

[0062] Figure 9 Flowchart of the wafer position calibration method provided by an embodiment of the present invention;

[0063] Figure 10 Flowchart of step S31 of the wafer position calibration method provided by an embodiment of the present invention;

[0064] Figures 11 to 14 Four different state diagrams of the position of the wafer on the base respectively. Detailed Description of the Invention

[0065] The following will describe the specific embodiments of the present invention in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only for explaining and illustrating the present invention, and are not used to limit the present invention.

[0066] In the related art, the position deviation amount (i.e., the offset amount of the wafer center along the horizontal plane and the deviation amount of the wafer rotation angle) of the wafer relative to the origin position (i.e., the target position of calibration) is usually determined by imaging the edge of the wafer. Specifically: the base is rotated to drive the wafer to rotate one week. During this process, a single imaging device is used to image the edge area of the wafer, and then the distances of each part of the wafer edge relative to the origin position and the orientations of the feature points can be obtained, and further the position deviation amount of the wafer can be determined. For example, when the wafer has a Notch

[0067] When there is a notch (a small notch at the edge of the wafer, such as a V-shaped notch), the feature point of the wafer is the notch; when the wafer has a flat edge (a part of the wafer edge is a straight line segment), the feature point of the wafer is the midpoint of the flat edge.

[0068] However, due to the limited detection range of the imaging device, when the position deviation of the wafer is large and the wafer edge exceeds the imaging area of the imaging device, the imaging device will not be able to identify the wafer deviation or the position of the wafer feature point, resulting in calibration failure. The machine will alarm and cause the machine to shut down. After the shutdown, the wafer needs to be manually taken out and then the machine is restored, which seriously affects the machine productivity.

[0069] Moreover, since the above calibration process needs to rotate the base and drive the wafer to rotate to detect the edges and feature points of the wafer everywhere, and the rotation speed of the base is a fixed value, when the position deviation of the wafer is too large, the center of gravity of the wafer deviates greatly, and the centrifugal force on the wafer when it rotates with the base is greater. When the position deviation of the wafer exceeds a certain value, the wafer is very likely to be thrown off during the rotation process, and there is a risk that the wafer is thrown out and collides with the cavity and is damaged.

[0070] To solve the above technical problems, as an aspect of the present invention, a wafer position calibration device is provided. This device is applied to semiconductor process equipment, for example Figure 1 As shown, the semiconductor process equipment includes, for example, a transfer chamber TM and a plurality of process chambers arranged around the transfer chamber TM. For example Figure 1 shows 5 process chambers PM1 to PM5, and also includes two cassette lifting devices VCE A and VCE B arranged on one side of the transfer chamber TM. The two are also respectively equipped with two cassette loading devices LP A and LP B, where LP is the Load Port. In addition, the semiconductor process equipment further includes a calibration chamber 100 arranged on one side of the transfer chamber TM. A wafer position calibration device (Aligner) is arranged in the calibration chamber 100. Before the robot in the transfer chamber TM takes out the wafer from the cassette lifting device VCE A or VCE B and sends it to the process chamber, the wafer needs to be sent into the calibration chamber 100 first, and the wafer position calibration device (Aligner) is used to calibrate the position deviation amount of the wafer. The specific position calibration process is as follows: the position deviation information of the wafer is obtained through detection and sent to the robot driver; then, the robot driver adjusts the wafer picking position of the robot entering the calibration chamber 100 according to this information to compensate for the position deviation of the wafer, that is, the wafer position calibration process is completed, so that the wafer can be more accurately placed on the carrying device after entering the process chamber. Of course, in practical applications, the wafer position calibration device provided by the embodiments of the present invention can also be applied to other chambers, and the embodiments of the present invention are not limited thereto.

[0071] Taking the application of the wafer position calibration device in the calibration chamber 100 as an example, the specific implementation manner of the wafer position calibration device will be described in detail below.

[0072] Specifically, as Figure 2 , Figure 3 shown, the wafer position calibration device includes a base 210 and a plurality of deviation detection sensors 410. Among them, the plurality of deviation detection sensors 410 are distributed at intervals along the circumferential direction of the base 210 and can move synchronously along the radial direction of the base 210 (i.e., the straight dotted line direction where each deviation detection sensor 410 is located in Figure 3 ). The plurality of deviation detection sensors 410 each include, for example, a signal transceiver 411 and a signal reflector 420. Among them, the signal transceiver 411 is used to emit a detection signal towards the base 210, and the direction of emitting this detection signal needs to form an angle with the plane where the bearing surface of the base 210 for bearing the wafer is located. This angle is, for example, 90°. And, the region defined by the intersection points of the detection signals emitted by the plurality of deviation detection sensors 410 with the plane where the bearing surface of the base 210 is located is the detection region A. Taking the angle of 90° as an example, as Figure 4 shown, the plurality of deviation detection sensors 410 vertically emit detection signals towards the plane where the bearing surface of the base 210 is located. In this case, the circumferential region where the emission ends of the detection signals of the plurality of deviation detection sensors 410 are located on the plane where the bearing surface of the base 210 is located is the above-mentioned detection region A, as shown by the circular dotted line in Figure 3 .

[0073] The plurality of deviation detection sensors 410 are used to detect whether the wafer on the base 210 coincides with or exceeds the boundary of the detection region A, and / or detect the direction in which the wafer deviates from the detection region A. By making the plurality of deviation detection sensors 410 move synchronously along the radial direction of the base 210, the boundary size of the detection region A of the plurality of deviation detection sensors 410 can be adjusted, so that the adjusted detection region A can meet the preset conditions. Moreover, by adjusting the boundary size of the above-mentioned detection region A, various different preset conditions can also be met, thereby expanding the application scenarios of the device. For example, it can be applicable to wafers of various different specifications and sizes. The above-mentioned preset conditions can be set according to specific needs. For example, the radius of the adjusted detection region A is equal to the sum of the radius of the wafer and the required restricted wafer position deviation. The required restricted wafer position deviation can be set in advance. By restricting the wafer position deviation, problems such as wafer slinging due to excessive wafer offset and / or inability to identify the wafer position can be avoided.

[0074] On this basis, by using multiple deviation detection sensors 410 to detect whether the wafer on the base 210 coincides with or exceeds the boundary of the detection area A, and / or to detect the direction in which the wafer deviates from the detection area, it is possible to determine, according to the detection results of the multiple deviation detection sensors 410, whether the wafer on the base 210 coincides with or exceeds the boundary of the detection area A, and in the case where the wafer on the base 210 coincides with or exceeds the boundary of the detection area A, move the wafer into the detection area A. That is, it is possible to correct the position of the wafer according to the detection results of the multiple deviation detection sensors 410 to ensure that the wafer on the base 210 is completely located within the detection area A that meets the above preset conditions, so that the offset of the wafer located within the detection area A does not exceed the allowable value. That is, the wafer offset can be controlled within the allowable range, which can be set, for example, to ensure that there is no wafer throwing phenomenon due to excessive wafer offset when the base 210 rotates, and / or to ensure that there is no problem of inability to identify the wafer position due to the wafer offset exceeding the calibration range, thereby reducing the incidence of calibration failure, improving the safety of the wafer calibration process, and reducing the situation of the machine alarm and downtime, and improving the production capacity.

[0075] It should be noted that using multiple deviation detection sensors 410 to detect whether the wafer on the base 210 coincides with or exceeds the boundary of the detection area A can be used in cooperation with other detection devices. That is, after correcting the position of the wafer according to the detection results of the multiple deviation detection sensors 410 to ensure that the wafer on the base 210 is completely located within the detection area A that meets the above preset conditions, other detection devices can be used to determine the position deviation amount of the wafer relative to the origin position (i.e., the target position of calibration) (i.e., the offset of the wafer center along the horizontal plane and the deviation of the wafer rotation angle). For example, in the case where the base can rotate, by imaging the edge area of the wafer with an imaging device, the distances of each part of the wafer edge relative to the origin position and the orientation of the feature points can be obtained, and then the position deviation amount of the wafer can be determined. That is to say, the position of the wafer can be preliminarily detected by the multiple deviation detection sensors 410, and then the position of the wafer can be accurately detected by other detection devices. The above preliminary detection can avoid the problem of inability to identify the wafer position due to excessive wafer offset exceeding the detection range of other detection devices, and can also avoid the wafer throwing phenomenon due to excessive wafer offset in the case where the base needs to rotate. Of course, the embodiments of the present invention are not limited thereto. In practical applications, in scenarios where the requirement for the wafer position accuracy is not high, the multiple deviation detection sensors 410 can also be used alone to detect the wafer position.

[0076] There can be various driving structures for realizing the synchronous movement of the multiple deviation detection sensors 410 along the radial direction of the base 210. For example, as Figure 2 andFigure 4 As shown, the wafer position calibration device further includes a plurality of connecting rods 433, a plurality of guiding components, and a lifting drive component 430. Among them, the plurality of guiding components are distributed at intervals along the circumferential direction of the base 210. Each guiding component includes a guide rail 441 extending along the radial direction of the base 210, and a slider 442 capable of sliding relative to the guide rail 441; the first ends of the plurality of connecting rods 433 are respectively hinged to the sliders 442 in the plurality of guiding components; the plurality of deviation detection sensors 410 (i.e., signal transceiver 411) are respectively fixed on the plurality of sliders 442; the second ends of the plurality of connecting rods 433 are all hinged to the lifting drive component 430; the lifting drive component 430 is used to drive the second ends of the plurality of connecting rods 433 to lift, so that the plurality of connecting rods 433 can respectively drive the plurality of sliders 442 and the deviation detection sensors 410 thereon to move synchronously along the radial direction of the base 210. Specifically, the above-mentioned connecting rod 433 can transmit the power in the vertical direction provided by the lifting drive component 430 to the slider 442, and under the sliding cooperation of the slider 442 and the guide rail 441, convert the power in the vertical direction into the power in the radial direction of the base 210 and transmit it to the corresponding deviation detection sensor 410. Moreover, since the heights of the second ends of the plurality of connecting rods 433 are the same when lifting, the plurality of deviation detection sensors 410 can be synchronously moved along the radial direction of the base 210.

[0077] In some embodiments, the lifting drive component 430 for realizing the above functions includes, for example, a rotary drive member 434 and a transmission structure. Among them, the rotary drive member 434 is used to provide rotary power; the transmission structure is respectively connected to the rotary drive member 434 and the second ends of the plurality of connecting rods 433, and is used to convert the rotary power provided by the rotary drive member 434 into a lifting motion and transmit it to the second ends of the plurality of connecting rods 433. The transmission structure is, for example, a lead screw nut structure, and specifically may include a vertically arranged lead screw 431 and a nut 432 threadedly connected to the lead screw 431. The second ends of the plurality of connecting rods 433 are all hinged to the nut 432, and the rotary drive member 434 is used to drive the lead screw 431 to rotate to drive the nut 432 to move along the extension direction of the lead screw 431 (i.e., the vertical direction). In addition, in order to support the lead screw 431, as Figure 2 、 Figure 4 shown, the lifting drive component 430 further includes a lead screw base 435, and both ends of the lead screw 431 are rotatably connected to the lead screw base 435. In addition, as Figure 4 shown, the lifting drive component 430 further includes a coupling 436, and the rotary drive member 434 is connected to the lead screw 431 through the coupling 436.

[0078] In some embodiments, considering the length limitations of the guide rail 441 and the lead screw 431, the rotary drive member 434 cannot drive the lead screw 431 to rotate infinitely in the same direction. Based on this, in order to prevent the movement of the nut 432 from exceeding the stroke limited by the lead screw 431 and / or the movement of the sliding member 442 from exceeding the stroke limited by the guide rail 441, and to ensure the safety of the semiconductor process, such as Figure 2 、 Figure 4 and Figure 5 shown, the lifting drive assembly 430 further includes a fixed member 452 extending in the vertical direction and two limit sensors 451. Among them, a trigger member 4321 is provided on the above transmission structure (such as the nut 432). The trigger member 4321 is, for example, a paddle. The two limit sensors 451 are oppositely arranged on the fixed member 452 in the vertical direction. The signal output by the limit sensor 451 can change when the trigger member 4321 passes through the height where the limit sensor 451 is located, so that the controller controls the rotary drive member 434 to stop driving. Specifically, the two limit sensors 451 respectively form an upper limit switch and a lower limit switch. If the trigger member 4321 moves upward continuously with the nut 432, when the trigger member 4321 passes through the upper limit switch formed by the corresponding limit sensor 451, the signal of the limit sensor 451 changes to cut off the enable signal of the rotary drive member 434, so that the rotary drive member 434 cannot continue to rotate, thereby preventing the nut 432 from continuing to move upward, and thus avoiding the movement of the nut 432 from exceeding the stroke limited by the lead screw 431, so as to ensure the safety of the entire semiconductor process equipment. Further optionally, as Figure 5 shown, the limit sensor 451 is a concave photoelectric sensor, and the signal output by the limit sensor 451 can change when the trigger member 4321 passes through the concave groove of the concave photoelectric sensor.

[0079] In a specific embodiment, as Figure 2 shown, taking the wafer position calibration device applied to the calibration chamber 100 as an example, a fixed bracket 460 is provided at the bottom of the calibration chamber 100. The lead screw base 435 and the fixed member 452 are both fixedly arranged on the fixed bracket 460.

[0080] For easy understanding, in combination with Figure 6 and Figure 7A driving structure composed of multiple connecting rods 433, multiple guiding components, and a lifting driving component 430 drives multiple deviation detection sensors 410 to move synchronously along the radial direction of the base 210, and the specific method of adjusting the detection area A is described in detail. Specifically, the center point O of the base 210 is the origin position, and the length of the connecting rod 433 is a fixed value, denoted as L. If the radius of the wafer to be tested is R1, the rotation drive 434 can be controlled to rotate, driving the nut 432 to move up and down, so that the position of the deviation detection sensor 410 is on the pitch circle with a radius of R1. At this time, the height difference between the nut 432 and the center point O is recorded, denoted as H1, and satisfies the following relational expression:

[0081]

[0082] If the allowable position deviation of the wafer is set as △R, the deviation detection sensor 410 needs to be adjusted to the position on the pitch circle with a radius of R2, and R2 satisfies:

[0083] R2 = R1 + ΔR;

[0084] According to the Pythagorean theorem, the distance △H that the nut 432 needs to move upward can be calculated as:

[0085]

[0086] As can be seen from the above, in order to obtain the detection area A that meets the preset conditions (i.e., setting △R), the distance △H can be calculated according to the above parameters and relational expressions. The controller can control the rotation angle of the rotation drive 434 according to this distance △H. In some embodiments, the rotation drive 434 includes a rotary motor with an encoder; the encoder is used to detect the rotation angle of the drive shaft of the rotary motor. In this case, the controller can control the rotation angle of the rotary motor according to the rotation angle fed back by the encoder, so that the upward movement distance of the nut 432 is △H.

[0087] In some embodiments, such as Figure 2As shown, each deviation detection sensor 410 for implementing the above detection function includes, for example, a signal transceiver 411 and a signal reflector 420. Among them, the signal transceiver 411 is located at a position lower than the bearing surface of the base 210, such as the bottom of the calibration chamber 100, and the signal transceiver 411 can move synchronously along the radial direction of the base 210, for example, move under the drive of the above drive structure. The signal reflector 420 is located at a position higher than the bearing surface of the base 210 and corresponds to the area where the movement trajectory of the signal transceiver 411 is located. That is, each position passed by the signal transceiver 411 moving along the radial direction of the base 210 can be opposite to the signal reflector 420 in the direction of the signal emitted by the signal transceiver 411 (such as the vertical direction). The signal transceiver 411 is used to emit a detection signal to the corresponding signal reflector 420; the signal reflector 420 is used to reflect the detection signal, and the signal transceiver 411 is also used to determine the wafer position offset when the reflected signal reflected by the signal reflector 420 of the detection signal is not received. In some alternative embodiments, the detection signal may be an optical signal. In practical applications, the signal transceiver 411 may send a feedback signal to the controller when the reflected signal reflected by the signal reflector 420 of the detection signal is not received, and stop sending the feedback signal when the reflected signal reflected by the signal reflector 420 of the detection signal is received; or, it may also be to send a feedback signal to the controller when the reflected signal reflected by the signal reflector 420 of the detection signal is received, and stop sending the feedback signal when the reflected signal reflected by the signal reflector 420 of the detection signal is received.

[0088] In some embodiments, on the basis of initially detecting the wafer position by using a plurality of deviation detection sensors 410, the wafer position can also be accurately detected by other detection devices. Specifically, the base 210 can rotate, for example, as Figure 2 shown, the wafer position calibration device further includes a rotation motor 220, and the rotation motor 220 is used to drive the base 210 to rotate. Optionally, the rotation motor 220 is equipped with an encoder, so as to be able to feedback its rotation angle to the controller.

[0089] Moreover, the wafer position calibration device further includes a wafer detection component 300, which includes a transmitter 310 and a receiver 320. Both the transmitter 310 and the receiver 320 are located outside the edge of the bearing surface of the base 210 and on both sides of the bearing surface in the vertical direction. Among them, the transmitter 310 is used to emit an imaging signal towards the receiver 320; the receiver 320 is used to receive the imaging signal that is not blocked by the wafer on the base 210 to generate an image of the wafer edge shape. In some alternative embodiments, the imaging signal may be an optical signal. The above-mentioned transmitter 310 is, for example, an LED emission device; the receiver 320 is, for example, a CCD detection device. Through the wafer detection component 300, the wafer position can be accurately detected, so that the controller can adjust the pick-up position of the manipulator to enter the calibration chamber 100 for wafer pick-up through the accurate wafer position deviation information to compensate for the wafer position deviation, so that the wafer can be more accurately placed on the bearing device after entering the process chamber.

[0090] In some embodiments, as Figure 8 shown, the wafer position calibration device further includes a controller 30, which includes at least one processor and a storage device. At least one program is stored on the storage device; when at least one program is executed by at least one processor, the at least one processor is caused to implement the wafer position calibration method.

[0091] Specifically, as Figure 9 shown, the above-mentioned wafer position calibration method includes:

[0092] S1. According to a preset wafer position deviation value, control a plurality of deviation detection sensors 410 to synchronously move along the radial direction of the base 210 so that the radius of the detection area A is equal to the sum of the radius of the wafer 10 and the above-mentioned wafer position deviation value;

[0093] The above-mentioned wafer position deviation value is the wafer position deviation that needs to be restricted, and this value is preset. By restricting this wafer position deviation, problems such as wafer slinging due to excessive wafer offset and / or the wafer detection component 300 being unable to identify the wafer position can be avoided. That is, the above step S1 is used to make the detection area A meet the preset condition by controlling a plurality of deviation detection sensors 410 to synchronously move along the radial direction of the base 210. The preset condition is that the radius of the detection area A is equal to the sum of the radius of the wafer 10 and the above-mentioned wafer position deviation value.

[0094] S2. According to the detection results of the plurality of deviation detection sensors 410, judge whether the wafer 10 on the base 210 coincides with or exceeds the boundary of the detection area A;

[0095] S3. In the case where the wafer 10 on the base 210 coincides with or exceeds the boundary of the detection area A, move the wafer into the detection area A.

[0096] The above-mentioned step S2 and step S3 are used to correct the position of the wafer according to the detection results of multiple deviation detection sensors 410, so as to ensure that the wafer on the base 210 is completely located within the detection area A that meets the above preset conditions, so that the offset of the wafer 10 within the detection area A will not exceed the allowable value, that is, the wafer offset can be controlled within the allowable range. The allowable range can be set, for example, to ensure that there is no wafer throwing phenomenon due to excessive wafer offset when the base 210 rotates, and / or to ensure that there is no problem that the wafer position cannot be recognized due to the wafer offset exceeding the calibration range. Furthermore, the incidence rate of calibration failure can be reduced, the safety of the wafer calibration process can be improved, and the situation of machine alarm shutdown can be reduced, thereby improving production capacity.

[0097] Further, as Figure 8 and Figure 10 shown, the above-mentioned step S3 includes:

[0098] S31. According to the detection results of multiple deviation detection sensors 410, determine the offset direction of the wafer 10, and set the position deviation amount of the wafer 10 as the wafer position deviation value;

[0099] Since there are multiple deviation detection sensors 410, which are distributed at different positions in the circumferential direction, by judging which signal transceiver 411 in the deviation detection sensor 410 stops outputting the optical path signal because the signal reflection member 420 emits a reflection signal and is blocked by the wafer 10, the offset direction of the wafer can be determined. When the controller 30 receives the optical path signal of the deviation detection sensor 410, it can determine that the position deviation amount of the wafer 10 exceeds the detection area A, but cannot accurately identify the specific value of the position deviation amount. Therefore, the position deviation amount of the wafer 10 is set as the preset wafer position deviation value, that is, the wafer position deviation required to be restricted above.

[0100] S32. According to the offset direction of the wafer 10 and the wafer position deviation value, adjust the wafer picking position of the manipulator 20, so that the wafer picking position deviates from the center of the bearing surface of the base 210 in the direction opposite to the offset direction of the wafer 10, and the offset amount is equal to the wafer position deviation value;

[0101] Specifically, the controller 30 obtains the offset direction and the wafer position deviation value of the wafer 10 and sends them to the manipulator driver 21; the manipulator driver 21 adjusts the wafer picking position of the manipulator 20 according to this information, so that the wafer picking position deviates from the center of the bearing surface of the base 210 in the direction opposite to the offset direction of the wafer 10, and the offset amount is equal to the wafer position deviation value, that is, compensating for the position deviation of the wafer 10.

[0102] S33. Control the manipulator to pick up the wafer from the wafer picking position after self - adjustment;

[0103] S34. Control the manipulator to place the wafer on the base again from the wafer picking position before self - adjustment;

[0104] The above steps S33 and S34 can be used to make the current position of the wafer deviate in the direction opposite to the previous deviation direction relative to the position when the wafer was placed on the base last time when the wafer is placed on the base again, so as to eliminate the previous wafer position deviation.

[0105] S35. Return to the above step S2.

[0106] The above step S35 is used to re - judge whether the wafer 10 on the base 210 coincides with or exceeds the boundary of the detection area A, so as to ensure that the wafer 10 does not coincide with or exceed the boundary of the detection area A. If it still coincides with or exceeds the boundary of the detection area A, then repeat the above steps S31 to S35.

[0107] In some embodiments, the wafer position calibration method further includes:

[0108] When the number of times the wafer 10 is placed on the base 210 is greater than or equal to a preset number of times, an alarm signal is sent.

[0109] When the manipulator still cannot move the wafer into the detection area after adjusting the wafer position multiple times, it means that there is a situation where the wafer position deviation is too large and the manipulator cannot correct it. At this time, an alarm needs to be sent to notify the operator for manual inspection to further ensure the safety of the semiconductor process. The above preset number of times is, for example, 3 times. This number can be set according to specific needs.

[0110] Using multiple deviation detection sensors 410 to detect whether the wafer on the base 210 coincides with or exceeds the boundary of the detection area A, it can be used in cooperation with other detection devices. Taking the example that the detection device includes a wafer detection component 300 and the base 210 can rotate, as Figure 8 shown, the wafer position calibration method further includes:

[0111] When the wafer 10 on the base 210 is inside the boundary of the detection area A, control the base 210 to drive the wafer 10 to rotate, and control the wafer detection component 300 (including a transmitter 310 and a receiver 320) to detect and obtain an image of the wafer edge shape;

[0112] Determine the position deviation amount of the center of the wafer 10 relative to the center of the bearing surface of the base 210 and / or the position of the characteristic points of the wafer 10 according to the detection result of the wafer detection component 300.

[0113] When the wafer 10 on the base 210 is located inside the boundary of the detection area A, the probability that the wafer 10 is thrown off during the rotation of the base 210 is relatively low and does not exceed the detection range of the wafer detection component 300. Therefore, the controller 30 can directly control the rotation of the base 210 and at the same time control the wafer detection component 300 to perform detection.

[0114] In some embodiments, the wafer position calibration method further includes:

[0115] Calibrate the wafer picking position of the manipulator 20 according to the position deviation amount of the wafer 10;

[0116] Control the manipulator 20 to pick up the wafer from the calibrated wafer picking position.

[0117] After determining the position deviation amount of the center of the wafer 10 relative to the center of the bearing surface of the base 210 and / or the position of the characteristic points of the wafer 10 through the wafer detection component 300, the controller 30 obtains accurate wafer position deviation information and adjusts the wafer picking position of the manipulator 20 according to this information to compensate for the position deviation of the wafer 10, so that the wafer 10 can be more accurately placed on the bearing device after entering the process chamber.

[0118] In some embodiments, the wafer position calibration method further includes:

[0119] Control the rotation of the base 210 according to the position of the characteristic points of the wafer 10 so that the position of the characteristic points of the wafer 10 is at a specified angular position.

[0120] The above-mentioned specified angular position, for example, makes the placement directions of the characteristic points (such as flat edges) of different wafers in the cassette consistent.

[0121] In a specific embodiment, as Figures 11 to 14 shown, set the center of the bearing surface of the base 210 as the origin, denoted as O, the reaching direction of the manipulator 20 as the negative y-axis direction, and the direction of the receiver 320 in the wafer detection component 300 towards the transmitter 310 as the positive x-axis direction to construct an x, y-axis coordinate system. The center of the wafer 10 is denoted as O1, and the signal transceivers 411 of the 4 deviation detection sensors 410 are evenly distributed on the coordinate system, denoted as a, b, c, d respectively. Taking the detection signals vertically emitted upward by the 4 signal transceivers 411 as an example, as Figure 11 shown, when the center O1 of the wafer 10 coincides with the center O of the bearing surface, the difference between the radius of the pitch circle formed by the emission centers of the signal transceivers 411 and the radius of the wafer 10 is △R, that is, the required restricted wafer position deviation is △R.

[0122] When the manipulator 20 places the wafer 10 on the ejector pin 230 (Pin) of the base 210 after picking up the wafer from the previous station, the position of the wafer 10 on the base 210 can be asFigures 11 to 14 Several different states shown as follows:

[0123] As Figure 11 shown, the center O1 of the wafer 10 coincides with the center O of the bearing surface. At this time, the position of the wafer 10 on the base 210 has no offset, which is the ideal state.

[0124] As Figure 12 shown, the center O1 of the wafer 10 does not coincide with the center O of the bearing surface, that is, there is a deviation in the position of the wafer 10 on the base 210, but the deviation detection sensor 410 is not blocked, that is, it does not coincide with or exceed the boundary of the detection area A. At this time, the controller 30 does not receive the optical path signal of the deviation detection sensor 410, and can directly control the rotation motor 220 to drive the base 210 to rotate and then drive the wafer 10 to rotate. During the rotation, the controller 30 identifies the edge and feature points of the wafer 10 according to the image of the wafer edge shape generated by the receiver 320 in the wafer detection component 300, so as to make the position of the feature points of the wafer 10 at the specified angular position by controlling the rotation of the base 210; and, the controller 30 records the offset direction and the wafer position deviation value of the wafer 10 at this time, and sends them to the manipulator driver 21; the manipulator driver 21 adjusts the wafer picking position of the manipulator 20 according to this information, so that the wafer picking position deviates from the center of the bearing surface of the base 210 in the direction opposite to the offset direction of the wafer 10, and the offset amount is equal to the wafer position deviation value, that is, compensates for the position deviation of the wafer 10.

[0125] As Figure 13 shown, the center O1 of the wafer 10 does not coincide with the center O of the bearing surface, that is, there is a deviation in the position of the wafer 10 on the base 210, and the wafer 10 has blocked the deviation detection sensor 410 marked as b, that is, the wafer 10 coincides with or exceeds the boundary of the detection area A. At this time, the controller 30 receives the optical path signal of the deviation detection sensor 410 marked as b. In this case, to prevent wafer throwing, the base 210 cannot be directly driven to rotate, and the position of the wafer 10 needs to be calibrated, that is, the wafer is moved into the detection area A. Specifically, when the controller 30 receives the optical path signal of the deviation detection sensor 410 marked as b, it is determined that the position deviation amount of the wafer 10 is greater than or equal to △R, and the offset direction is towards the deviation detection sensor 410 marked as b, but the specific value of the position deviation amount cannot be accurately identified. Therefore, the position deviation amount of the wafer 10 is set to the preset wafer position deviation value, that is, △R, and the offset direction is towards the deviation detection sensor 410 marked as b. According to the Pythagorean theorem, the offset amounts △x and △y of the wafer in the x and y directions are respectively:

[0126]

[0127]

[0128] The controller 30 sends the above deviation information to the manipulator driver 21. According to this information, the manipulator driver 21 adjusts the wafer picking position of the manipulator 20. This picking position deviates from the center O of the bearing surface of the base 210 in the direction away from the deviation detection sensor 410 marked as b, and the offset amounts are △x and △y, that is, to compensate for the position deviation of the wafer 10. Then, the manipulator 20 is controlled to pick up the wafer from the adjusted picking position, and the manipulator 20 is controlled to place the wafer 10 on the base 210 again from the picking position before adjustment.

[0129] Under normal circumstances, after the first pre-calibration, the wafer position should be within the pitch circle formed by the emission centers of the four signal transceivers 411 marked as a, b, c, and d, that is, within the detection area A. At this time, the subsequent calibration operations are carried out according to the calibration method corresponding to the state shown in Figure 12 However, if the controller 30 still receives the optical path signal of the deviation detection sensor 410 after the first pre-calibration, pre-calibration needs to be carried out again.

[0130] Figure 14 Compared with the state of the wafer position shown above in Figure 13 The difference is only that, Figure 14 In the state shown in, the wafer 10 simultaneously blocks the two deviation detection sensors 410 marked as a and b. In this case, the offset direction of the wafer 10 can be set to the coordinate axis between the two deviation detection sensors 410 that block the marks a and b, that is, in the -x direction. Figure 14 The pre-calibration process corresponding to the state of the wafer position shown in is the same as the pre-calibration process corresponding to the state of the wafer position shown in the above Figure 13 and will not be elaborated here.

[0131] The controller sends the deviation information to the manipulator driver, and the manipulator driver drives the manipulator to pick up the wafer. The picking position deviates -△R in the x direction from the target station, and remains unchanged in the y direction. Then, the picked-up wafer is placed on the ejector pin 230 at the original station again. Similarly, if the controller still receives the occlusion signal of the deviation detection sensor 210 after the first pre-calibration, multiple calibration operations can also be carried out.

[0132] Another aspect of the present invention, as shown in Figure 2 also provides a calibration chamber 100. The calibration chamber 100 includes a chamber body and the above wafer position calibration device provided by the embodiments of the present invention; wherein, the base 210 is arranged in the chamber body of the calibration chamber 100, and a plurality of deviation detection sensors 410 are arranged outside the chamber body, and a transparent window 110 is arranged on the chamber body corresponding to the movement trajectory coverage area of the plurality of deviation detection sensors 410. The material of the transparent window 110 includes, for example, glass.

[0133] Specifically, in some embodiments, transparent windows 110 are provided at both the top and bottom of the chamber body. The signal transceiver 411 in each deviation detection sensor 410 is located at a position lower than the bearing surface of the base 210, such as the bottom of the calibration chamber 100, and is correspondingly arranged with the transparent window 110 at the bottom. The signal reflector 420 is located at a position higher than the bearing surface of the base 210, such as at the top of the calibration chamber 100, and is correspondingly arranged with the transparent window 110 at the top.

[0134] In some embodiments, when the wafer detection assembly 300 is provided, the emitter 310 can be arranged at the top of the calibration chamber 100 and is correspondingly arranged with the transparent window 110 at the top. The receiver 320 is arranged at the bottom of the calibration chamber 100 and is correspondingly arranged with the transparent window 110 at the bottom.

[0135] The calibration chamber provided by the embodiment of the present invention can reduce the incidence of calibration failure, improve the safety of the wafer calibration process, reduce the situation of machine alarm and downtime, and improve production capacity by adopting the above-mentioned wafer position calibration device provided by the embodiment of the present invention.

[0136] Another aspect of the present invention also provides a semiconductor processing apparatus, including a transfer chamber, a calibration chamber and a process chamber connected to the transfer chamber. A manipulator is provided in the transfer chamber for transferring a wafer into the calibration chamber to calibrate the wafer picking position of the manipulator, taking out the wafer from the calibrated picking position, and transferring it into the process chamber for processing. The calibration chamber adopts the above-mentioned calibration chamber provided by the embodiment of the present invention.

[0137] The semiconductor processing apparatus provided by the embodiment of the present invention can reduce the incidence of calibration failure, improve the safety of the wafer calibration process, reduce the situation of machine alarm and downtime, and improve production capacity by adopting the above-mentioned calibration chamber provided by the embodiment of the present invention.

[0138] Another aspect of the present invention also provides a wafer position calibration method, which is applied to the above-mentioned wafer position calibration device provided by the embodiment of the present invention; as Figure 9 shown, the wafer position calibration method includes:

[0139] S1. According to a preset wafer position deviation value, control a plurality of deviation detection sensors 410 to synchronously move along the radial direction of the base 210 so that the radius of the detection area A is equal to the sum of the radius of the wafer 10 and the above-mentioned wafer position deviation value;

[0140] S2. According to the detection results of the plurality of deviation detection sensors 410, judge whether the wafer 10 on the base 210 coincides with or exceeds the boundary of the detection area A;

[0141] S3. When the wafer 10 on the base 210 coincides with or exceeds the boundary of the detection area A, move the wafer into the detection area A.

[0142] The above wafer position calibration method has been described in detail in the above embodiments of the wafer position calibration device provided in the embodiments of the present invention, and will not be elaborated here.

[0143] In summary, the wafer position calibration device and method provided in the embodiments of the present invention can use a plurality of deviation detection sensors circumferentially spaced along the base, and by synchronously moving radially along the base, adjust the boundary size of the detection areas of the plurality of deviation detection sensors, so that the adjusted detection area meets preset conditions (for example, the radius of the adjusted detection area is equal to the sum of the radius of the wafer and the required limited wafer position deviation). Moreover, by adjusting the boundary size of the above detection area, various different preset conditions can also be met, thereby expanding the application scenarios of the device. On this basis, by using a plurality of deviation detection sensors to detect whether the wafer on the base coincides with or exceeds the boundary of the detection area, and / or detect the direction in which the wafer deviates from the detection area, it is possible to judge whether the wafer on the base coincides with or exceeds the boundary of the detection area according to the detection results of the plurality of deviation detection sensors, and when the wafer on the base coincides with or exceeds the boundary of the detection area, move the wafer into the detection area, that is, the wafer position can be corrected according to the detection results of the plurality of deviation detection sensors to ensure that the wafer on the base is completely located within the detection area that meets the above preset conditions, so that the offset of the wafer within the detection area will not exceed the allowable value, that is, the wafer offset can be controlled within the allowable range, and the allowable range can be set, for example, to ensure that there is no wafer flinging phenomenon due to excessive wafer offset when the base rotates, and / or ensure that there is no problem of being unable to identify the wafer position due to the wafer offset exceeding the calibration range, thereby reducing the incidence of calibration failure, improving the safety of the wafer calibration process, and reducing the situation of machine alarm and downtime, and improving production capacity.

[0144] It can be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principle of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims

1. A wafer position calibration device, characterized in that, Comprising: A base for carrying a wafer; A plurality of deviation detection sensors, which are circumferentially spaced apart along the base and can move synchronously in the radial direction of the base; The plurality of deviation detection sensors are used to emit detection signals towards the base, and the region jointly defined by the intersection points of the detection signals emitted by the plurality of deviation detection sensors and the plane of the bearing surface of the base is the detection region; the plurality of deviation detection sensors are used to detect whether the wafer on the base coincides with or exceeds the boundary of the detection region, and / or detect the direction in which the wafer deviates from the detection region.

2. The wafer position calibration device according to claim 1, wherein It further includes a plurality of connecting rods, a plurality of guiding components and a lifting driving component. Among them, the plurality of guiding components are circumferentially spaced apart along the base, and each guiding component includes a guide rail extending in the radial direction of the base and a sliding member capable of sliding relative to the guide rail; The first ends of the plurality of connecting rods are respectively hinged to the sliding members in the plurality of guiding components; the plurality of deviation detection sensors are respectively fixed to the plurality of sliding members; the second ends of the plurality of connecting rods are all hinged to the lifting driving component; The lifting driving component is used to drive the second ends of the plurality of connecting rods to lift, so that the plurality of connecting rods can respectively drive the plurality of sliding members and the deviation detection sensors thereon to move synchronously in the radial direction of the base.

3. The wafer position calibration device according to claim 2, wherein, The lifting driving component includes a rotation driving member and a transmission structure. Among them, the rotation driving member is used to provide rotational power; the transmission structure is respectively connected to the rotation driving member and the second ends of the plurality of connecting rods, and is used to convert the rotational power into a lifting motion and transmit it to the second ends of the plurality of connecting rods.

4. The wafer position calibration device according to claim 3, wherein The rotation driving member includes a rotary motor with an encoder; the encoder is used to detect the rotation angle of the driving shaft of the rotary motor.

5. The wafer position calibration device according to claim 3, characterized in that, The lifting driving component further includes a fixing member extending in the vertical direction and two limit sensors. Among them, a triggering member is provided on the transmission structure; the two limit sensors are oppositely arranged in the vertical direction on the fixing member, and the signals output by the limit sensors can change when the triggering member passes through the height where the limit sensors are located.

6. The wafer position calibration device according to claim 1, wherein Each deviation detection sensor includes a signal transceiver and a signal reflector. Among them, the signal transceiver is located at a position lower than the bearing surface of the base and can move synchronously in the radial direction of the base, and the signal reflector is located at a position higher than the bearing surface of the base and corresponds to the region where the moving trajectory of the signal transceiver is located; The signal transceiver is used to emit the detection signal to the corresponding signal reflector; the signal reflector is used to reflect the detection signal, and the signal transceiver is further used to determine the position offset of the wafer when it does not receive the reflected signal reflected by the signal reflector from the detection signal.

7. The wafer position calibration device according to claim 1, wherein, The base can rotate; The wafer position calibration device further includes a wafer detection component, which includes a transmitter and a receiver. Both the transmitter and the receiver are located outside the edge of the bearing surface of the base and on both sides of the bearing surface in the vertical direction. Among them, The transmitter is used to emit an imaging signal towards the receiver; the receiver is used to receive the imaging signal not blocked by the wafer on the base to generate an image of the wafer edge shape.

8. The wafer position calibration device according to any one of claims 1-7, characterized in that, It further includes: A controller; The controller includes at least one processor and a storage device, and at least one program is stored on the storage device; When the at least one program is executed by the at least one processor, the at least one processor implements a wafer position calibration method, and the wafer position calibration method includes: According to a preset wafer position deviation value, controlling a plurality of the deviation detection sensors to synchronously move along the radius of the base so that the radius of the detection area is equal to the sum of the radius of the wafer and the wafer position deviation value; According to the detection results of the plurality of deviation detection sensors, determining whether the wafer on the base coincides with or exceeds the boundary of the detection area; In the case where the wafer on the base coincides with or exceeds the boundary of the detection area, moving the wafer into the detection area.

9. The wafer position calibration device according to claim 8, wherein The step of moving the wafer into the detection area in the case where the wafer on the base coincides with or exceeds the boundary of the detection area includes: According to the detection results of the plurality of deviation detection sensors, determining the offset direction of the wafer and setting the wafer position deviation amount to the wafer position deviation value; According to the offset direction of the wafer and the wafer position deviation value, adjusting the wafer picking position of the manipulator so that the wafer picking position is offset in the direction opposite to the offset direction of the wafer relative to the center of the bearing surface of the base, and the offset amount is equal to the wafer position deviation value; Controlling the manipulator to pick up the wafer from the adjusted wafer picking position; Controlling the manipulator to place the wafer on the base again from the wafer picking position before adjustment; Returning to the step of determining whether the wafer on the base coincides with or exceeds the boundary of the detection area according to the detection results of the plurality of deviation detection sensors.

10. The wafer position calibration device according to claim 9, characterized in that, The controller is further used for: When the number of times the wafer is placed on the base is greater than or equal to a preset number of times, sending out an alarm signal.

11. The wafer position calibration device according to claim 8, wherein The base can rotate; the wafer position calibration device further includes a wafer detection component, which includes a transmitter and a receiver. Both the transmitter and the receiver are located outside the edge of the bearing surface of the base and on both sides of the bearing surface in the vertical direction. Among them, the transmitter is used to emit an imaging signal towards the receiver; the receiver is used to receive the imaging signal not blocked by the wafer on the base to generate an image of the wafer edge shape; The controller is further used for: In the case where the wafer on the base is inside the boundary of the detection area, controlling the base to drive the wafer to rotate and controlling the wafer detection component to detect and obtain an image of the wafer edge shape; Determine the position deviation amount of the center of the wafer relative to the center of the bearing surface of the base, and / or the position of the feature points of the wafer, according to the detection result of the wafer detection component.

12. The wafer position calibration device according to claim 11, characterized in that, The controller is further configured to: Calibrate the wafer picking position of the manipulator according to the position deviation amount of the wafer; Control the manipulator to pick up the wafer from the calibrated wafer picking position.

13. The wafer position calibration device according to claim 11, characterized in that, The controller is further configured to: Control the base to rotate according to the position of the feature points of the wafer, so that the position of the feature points of the wafer is at a specified angular position.

14. A calibration chamber, comprising a chamber body, characterized in that, It further includes the wafer position calibration device according to any one of claims 1-13; The base is disposed in the chamber body, and a plurality of the deviation detection sensors are disposed outside the chamber body, and a transparent window is disposed on the chamber body corresponding to the movement trajectory coverage area of the plurality of the deviation detection sensors.

15. A semiconductor process equipment, comprising a transfer chamber, a calibration chamber and a process chamber connected to the transfer chamber. A manipulator is arranged in the transfer chamber, which is used to transfer a wafer into the calibration chamber to calibrate the wafer picking position of the manipulator, take out the wafer from the calibrated wafer picking position, and transfer the wafer into the process chamber for processing. It is characterized in that, The calibration chamber adopts the calibration chamber according to claim 14.

16. A wafer position calibration method, characterized in that, Applied to the wafer position calibration device according to any one of claims 1-13; the wafer position calibration method includes: Control a plurality of the deviation detection sensors to move synchronously along the radial direction of the base according to a preset wafer position deviation value, so that the radius of the detection area is equal to the sum of the radius of the wafer and the wafer position deviation value; Judge whether the wafer on the base coincides with or exceeds the boundary of the detection area according to the detection results of the plurality of the deviation detection sensors; When the wafer on the base coincides with or exceeds the boundary of the detection area, move the wafer into the detection area.

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