Semiconductor process equipment and use method thereof

Abstract

The invention provides semiconductor process equipment and a use method thereof. The semiconductor process equipment comprises a reaction cavity; the evaporator comprises an evaporation cavity, a premixing head, a gas outlet, a carrier gas inlet and an ultrapure water inlet; the premixing head is located at the top of the evaporation cavity, and the carrier gas inlet and the ultrapure water inlet are communicated with the evaporation cavity through the premixing head; the gas outlet is positioned at the bottom of the evaporation cavity; wherein a sleeve structure with a heating function is arranged in the evaporation cavity; the sleeve structure comprises a first sleeve, a second sleeve and a third sleeve; the first sleeve is connected with the top of the evaporation cavity, the lower portion of the first sleeve is located in the evaporation cavity and suspended, and an opening of the premixing head is located in the first sleeve. The second sleeve is connected with the bottom of the evaporation cavity, the upper portion of the second sleeve is located in the evaporation cavity and suspended, and the air outlet is located in the second sleeve. The third sleeve is located in the middle of the evaporation cavity, the upper portion of the third sleeve is inserted into the first sleeve, the lower portion of the third sleeve is inserted into the second sleeve, and the upper portion and the lower portion of the third sleeve are not communicated.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor technology, and in particular to a semiconductor process equipment. Background Art

[0002] The development of dynamic random access memory (DRAM) pursues performance indicators such as high speed, high integration density, and low power consumption. As semiconductor device structures shrink in size, the process complexity continues to increase, leading to increasingly stringent requirements for semiconductor process equipment. Therefore, how to design semiconductor process equipment that can meet the increasing process complexity is an urgent problem to be solved. Summary of the Invention

[0003] According to a first aspect of an embodiment of the present disclosure, there is provided a semiconductor process equipment, comprising:

[0004] Reaction chamber; evaporator, the evaporator includes: evaporation chamber, premixing head, gas outlet, carrier gas inlet, ultrapure water inlet;

[0005] The premixing head is located at the top of the evaporation chamber, and the carrier gas inlet and the ultrapure water inlet are connected to the evaporation chamber through the premixing head; the air outlet is located at the bottom of the evaporation chamber and connected to the reaction chamber; wherein, a sleeve structure with a heating function is provided in the evaporation chamber; the sleeve structure includes a first sleeve, a second sleeve and a third sleeve; the first sleeve is connected to the top of the evaporation chamber, the lower part of the first sleeve is located in the evaporation chamber and suspended, and the premixing head opening is located in the first sleeve; the second sleeve is connected to the bottom of the evaporation chamber, the upper part of the second sleeve is located in the evaporation chamber and suspended, and the air outlet is located in the second sleeve; the third sleeve is located in the middle of the evaporation chamber, the upper part of the third sleeve is interspersed with the first sleeve, the lower part of the third sleeve is interspersed with the second sleeve, and the upper and lower parts of the third sleeve are not connected.

[0006] In some embodiments, the first sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; the upper part of the third sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; wherein the first sleeve and the upper part of the third sleeve are interspersed with each other.

[0007] In some embodiments, the second sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; the lower part of the third sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; wherein the second sleeve and the lower part of the third sleeve are interspersed with each other.

[0008] In some embodiments, the third sleeve upper portion and the third sleeve lower portion are heated independently of each other.

[0009] In some embodiments, the aperture of the upper portion of the innermost layer of the second sleeve is smaller than the diameter of the innermost layer of the second sleeve.

[0010] In some embodiments, the upper overlapping portion of the first sleeve and the third sleeve has four layers in total and / or the lower overlapping portion of the second sleeve and the third sleeve has four layers in total.

[0011] In some embodiments, the premixing head includes a nozzle connected to the evaporation chamber; the ultrapure water inlet extends into the premixing head; the carrier gas inlet is connected to the premixing head, so that the carrier gas flowing into the carrier gas inlet surrounds the ultrapure water inlet, and the carrier gas carries the ultrapure water flowing into the ultrapure water inlet and is sprayed into the evaporation chamber through the nozzle.

[0012] According to a second aspect of an embodiment of the present disclosure, there is provided a method for using the aforementioned semiconductor process equipment, comprising:

[0013] The carrier gas flow rate is within the range of 0 to 10 standard liters per minute; the ultrapure water flow rate is within the range of 5 to 20 grams per minute; and the sleeve structure heating temperature range is within the range of 20 to 200 degrees Celsius.

[0014] In some embodiments, the heating temperature of the sleeve structure is controlled at 160 degrees Celsius; the carrier gas flow rate is 3 standard liters per minute; and the ultrapure water flow rate is 12 grams per minute.

[0015] In some embodiments, the heating temperature of the sleeve structure is controlled at 160 degrees Celsius; the carrier gas flow rate is 6 standard liters per minute; and the ultrapure water flow rate is 15 grams per minute.

[0016] In some embodiments, the heating temperature of the upper part of the first sleeve and the third sleeve is controlled at 100 degrees Celsius; the heating temperature of the lower part of the second sleeve and the third sleeve is controlled at 160 degrees Celsius; the carrier gas flow rate is 3 standard liters per minute; and the ultrapure water flow rate is 12 grams per minute. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a schematic diagram of a semiconductor process equipment according to an exemplary embodiment;

[0018] Figure 2 is a cross-sectional schematic diagram of an evaporator according to an exemplary embodiment;

[0019] Figure 3 is a schematic diagram of internal separation of an evaporator according to an exemplary embodiment;

[0020] Figure 4 is a temperature distribution simulation diagram according to an exemplary embodiment. DETAILED DESCRIPTION

[0021] The technical solutions of the present disclosure will be further described in detail below with reference to the accompanying drawings and examples. Although the accompanying drawings illustrate exemplary implementations of the present disclosure, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. Rather, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0022] The following paragraphs describe the present disclosure in more detail by way of example with reference to the accompanying drawings. The advantages and features of the present disclosure will become more apparent from the following description and claims. It should be noted that the drawings are highly simplified and not to exact scale, and are intended solely to facilitate and clearly illustrate the embodiments of the present disclosure.

[0023] It will be understood that the meanings of “on,” “over,” and “over” throughout this disclosure should be interpreted in the broadest manner, such that “on” not only means being “on” something with no intervening features or layers (i.e., directly on something), but also includes being “on” something with intervening features or layers.

[0024] In the embodiments of the present disclosure, the terms "first," "second," "third," etc. are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.

[0025] In the embodiments of the present disclosure, the term "layer" refers to a portion of a material including an area having a thickness. A layer may extend over the entirety of a lower or upper structure, or may have an extent that is smaller than the extent of the lower or upper structure. In addition, a layer may be an area of ​​a homogeneous or inhomogeneous continuous structure having a thickness that is smaller than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or a layer may be between any horizontal faces at the top and bottom surfaces of a continuous structure. A layer may extend horizontally, vertically, and / or along an inclined surface. A layer may include multiple sublayers.

[0026] It should be noted that the technical solutions described in the embodiments of the present disclosure can be arbitrarily combined without conflict.

[0027] With the development of semiconductor technology, thermal oxide thin film growth is a frequently used process technology in semiconductor manufacturing. Thermal oxide thin film growth is one of the core processes in semiconductor manufacturing, primarily used to grow a silicon dioxide (SiO2) insulating layer on the surface of silicon wafers. It is widely used in gate oxidation, field oxygen isolation, surface passivation, and other processes.

[0028] Basic chemical reactions of thermal oxidation film growth process:

[0029] Dry oxygen oxidation: carried out in a pure oxygen environment (temperature range: 800-1200℃), the reaction formula is:

[0030] Si+O2→SiO2

[0031] Features: The oxidation rate is slow (about 1-10nm / min), but the generated oxide layer is dense, has few defects, and has excellent dielectric properties. It is often used in high-quality insulating structures such as gate oxide layers.

[0032] Wet oxygen oxidation: water vapor (H2O) is introduced as an oxidant (temperature range: 900-1100°C), and the reaction formula is:

[0033] Si+2H2O→SiO2+2H2

[0034] Characteristics of thermal oxidation film growth process: fast oxidation rate (up to 100nm / min or more), but the oxide layer is relatively loose, suitable for thick oxide layers (such as field oxide or passivation layer) because of its high production efficiency.

[0035] Rapid Thermal Oxidation (RTO): An advanced technology that uses radiant heating (e.g., halogen lamps) to complete oxidation in a very short time (10-60 seconds) at temperatures exceeding 1000°C. This technology reduces the thermal budget and is suitable for thin oxide layers and heat-sensitive devices.

[0036] Thermal oxidation film growth process:

[0037] Temperature control: High temperature (usually 800-1200°C) is key to driving the reaction. The higher the temperature, the faster the oxidation rate, but precise control is required to avoid deformation of the silicon wafer.

[0038] Atmosphere control: Oxygen concentration, gas flow uniformity, and pressure directly impact the quality and thickness of the oxide layer. For example, high oxygen flow improves oxidation uniformity, especially in complex structures such as through-silicon vias.

[0039] Silicon wafer pretreatment: Silicon wafers need to be cleaned to remove surface contaminants to ensure a pure oxide layer.

[0040] Oxide layer growth mechanism: The silicon surface absorbs oxygen atoms through diffusion, forming a SiO2 layer. Its thickness is described by the Deal-Grove model: initially controlled by surface reactions and later by the oxygen diffusion rate. The final thickness is typically a few nanometers to a few microns.

[0041] Main applications of thermal oxide thin film growth:

[0042] Preparation of insulating layers: such as gate oxide, used for insulation isolation of MOSFET devices.

[0043] Surface passivation: Repairs surface damage caused by etching or ion implantation (such as scalloping) and smoothes the surface through oxidation-corrosion cycles.

[0044] Isolation structure: Field oxide is formed for electrical isolation between devices.

[0045] Special application: In SOI (Silicon on Insulator) substrate manufacturing, thermal oxidation is used to optimize the thickness and quality of the buried oxide layer.

[0046] The core advantage of the thermal oxidation process is its ability to generate high-quality, stable SiO2 layers, but its success depends on precise control of process parameters.

[0047] The main factors affecting the wet oxygen oxidation process include temperature, gas environment, time, pressure, silicon wafer status and equipment factors.

[0048] 1. Temperature

[0049] Influencing mechanism: Temperature is the key variable driving oxidation reactions. High temperatures (usually 900-1100°C) accelerate the splitting of water molecules, increase the activity of oxygen atoms, and thus increase the oxidation rate.

[0050] Specific impact:

[0051] Positive side: The oxidation rate is fast (up to 100nm / min) at high temperature (such as 1100℃), which is suitable for the efficient production of thick oxide layers (>200nm).

[0052] Negative: Excessively high temperature (>1150°C) may increase thermal stress in the silicon wafer and induce lattice defects (such as dislocations or microcracks); uneven temperature will cause variations in the thickness of the oxide layer (such as thick at the edge and thin in the center).

[0053] 2. H2O Concentration and Flow Rate

[0054] Mechanism of Influence: Water vapor is the source of the oxidant, and its concentration and flow rate directly affect the oxygen atom supply rate. High flow or high concentration of water vapor can accelerate the reaction, but uniform airflow distribution must be ensured.

[0055] Specific impact:

[0056] Positive: High water vapor flow rate (e.g., 2-5 L / min) significantly increases the oxidation rate, and is especially suitable for deep trenches or high aspect ratio structures (e.g., through silicon vias) due to their strong diffusion capabilities.

[0057] Negatives: Unstable flow or uneven concentration can lead to deviations in oxide layer thickness (typical variation ±5%). Residual hydrogen atoms (H) in water vapor may trigger interface traps, reducing the insulation performance of the oxide layer (the breakdown electric field decreases by 10-20%).

[0058] Engineering Optimization:

[0059] Use the bubbler method (Bubbler) or direct water injection method (Pyrolysis) to precisely control the water vapor partial pressure.

[0060] A multi-zone airflow distribution system is designed at the furnace tube inlet to ensure uniform exposure of the silicon wafer surface.

[0061] Nitrogen (N2) is added to dilute the water vapor and reduce the risk of hydrogen contamination.

[0062] 3. Oxidation Time

[0063] Influencing mechanism: Time directly determines the thickness of the oxide layer. The initial stage is controlled by surface reaction, and the later stage is limited by oxygen diffusion.

[0064] Specific impact:

[0065] Positive: Prolonging the oxidation time (e.g. 60-120 minutes) can easily achieve a micron-thick oxide layer.

[0066] Negatives: Too long a time increases the thermal budget, causing the diffusion of dopant impurities (such as boron or phosphorus), and changing the electrical properties of the device (threshold voltage drift); insufficient time will result in the oxide layer being too thin, unable to meet isolation or passivation requirements.

[0067] 4. Pressure

[0068] Influence mechanism: High pressure environment increases the frequency of gas molecule collisions and improves the reaction rate; low pressure slows down the reaction but improves uniformity.

[0069] Specific impact:

[0070] Positive: High pressure (>1atm) can increase the oxidation rate by 20-30%, which is suitable for rapid thick layer growth.

[0071] Negative: High pressure can easily cause airflow turbulence, resulting in an uneven oxide layer; excessive pressure may also aggravate the formation of hydrogen bubbles and introduce microporous defects.

[0072] 5. Wafer Surface Condition

[0073] Impact mechanism: The cleanliness, roughness, and pretreatment of the silicon wafer surface directly affect the quality of the oxidation reaction interface. Contaminants (such as metal ions or organic matter) can hinder oxygen diffusion.

[0074] 6. Equipment Factors

[0075] Influencing mechanism: Furnace tube type, temperature uniformity and maintenance status are the basis of process stability.

[0076] It can be seen that the evaporator in the semiconductor equipment provides the oxidant for the oxidation furnace by converting liquid water (H2O) into gaseous water vapor; therefore, the influence of the evaporator on the control of water vapor partial pressure in the wet oxygen oxidation process is particularly important.

[0077] The main workflow includes:

[0078] Liquid water supply: High-purity deionized water (resistivity>18MΩ·cm) with precise flow control by mass flow meter (MFC).

[0079] Vaporization process:

[0080] Bubbler method: Carrier gas (such as N2 / O2) is introduced into liquid water, carrying saturated water vapor into the reaction chamber.

[0081] Direct water injection method (Pyrolysis): Liquid water is injected into a high-temperature cracking chamber (>400℃) and instantly vaporized into water vapor.

[0082] Partial pressure control: Control the partial pressure of output water vapor by adjusting water temperature, carrier gas flow or cracking temperature.

[0083] The main influence of evaporator on wet oxygen oxidation process,

[0084] 1. Temperature stability → partial pressure fluctuation

[0085] Impact mechanism:

[0086] In the bubbling method, for every ±1°C fluctuation in water temperature (T), the deviation of saturated water vapor partial pressure reaches ±3–5%.

[0087] In the direct water injection method, uneven temperature in the cracking chamber will cause partial condensation of water vapor and a decrease in partial pressure.

[0088] Process consequences:

[0089] Partial pressure is too high → oxidation rate is too fast → oxide layer thickness exceeds the standard;

[0090] The partial pressure is too low → the oxidation rate is insufficient → the thickness is insufficient or the oxidation is uneven in the deep groove.

[0091] 2. Carrier gas flow accuracy → partial pressure dilution

[0092] Impact mechanism:

[0093] In the bubbling method, the carrier gas flow rate determines the water vapor dilution ratio:

[0094] The carrier gas flow rate fluctuation is ±5%, and the partial pressure deviation is ±3–8%.

[0095] Process consequences:

[0096] Excessive carrier gas → reduced H2O → insufficient oxide layer thickness;

[0097] Insufficient carrier gas → too much H2O → the density of the oxide layer decreases.

[0098] Fluctuations in water vapor partial pressure lead to uneven thickness of the prepared oxide layer, resulting in an excessively rough oxide layer. This, in turn, leads to poor product uniformity and reduced yield. Therefore, designing the evaporator structure to ensure stable water vapor delivery is crucial for the wet oxygen oxidation process.

[0099] According to the first aspect of the embodiment of the present disclosure, Figure 1-Figure 3 As shown, a semiconductor process equipment 10 is provided, comprising:

[0100] Reaction chamber 100; evaporator, the evaporator includes: evaporation chamber 200, premixing head 400, gas outlet 300, carrier gas inlet 500, ultrapure water inlet 600;

[0101] The premixing head is located at the top 210 of the evaporation chamber, and the carrier gas inlet and the ultrapure water inlet are connected to the evaporation chamber through the premixing head; the air outlet is located at the bottom of the evaporation chamber and connected to the reaction chamber; wherein, a sleeve structure with a heating function is provided in the evaporation chamber; the sleeve structure includes a first sleeve 610, a second sleeve 620 and a third sleeve 690; the first sleeve is connected to the top of the evaporation chamber, the lower part of the first sleeve is located in the evaporation chamber and suspended, and the premixing head opening 410 is located in the first sleeve; the second sleeve is connected to the bottom 220 of the evaporation chamber, the upper part of the second sleeve is located in the evaporation chamber and suspended, and the air outlet is located in the second sleeve; the third sleeve is located in the middle of the evaporation chamber, the upper part of the third sleeve is interspersed with the first sleeve, the lower part of the third sleeve is interspersed with the second sleeve, and the upper and lower parts of the third sleeve are not connected.

[0102] Because the first, second, and third sleeves intersect, carrier gas G1 carrying ultrapure water L1 enters the evaporation chamber from the top, passes through the first sleeve, encounters the third sleeve baffle 660, then returns to the top of the third sleeve, reaches the top of the evaporation chamber again, then flows along the outside of the third sleeve, through the lower portion of the third sleeve, and reaches the bottom of the evaporation chamber. It then returns to the lower portion of the third sleeve, flows along the second sleeve toward the third sleeve baffle, and then flows into the second sleeve and out to the outlet. During this flow, the carrier gas carrying ultrapure water is evenly heated before flowing out, providing a stable water vapor input to the reaction chamber for oxidizing wafers 1000 therein.

[0103] In some embodiments, the sleeve structure is fixed in the evaporation chamber via a connector 650 .

[0104] In some embodiments, there are multiple connecting members, which are distributed and fixed along the outermost layer of the third sleeve.

[0105] In some embodiments, the connecting piece is arranged at the outermost layer of the third sleeve corresponding to the third sleeve partition.

[0106] In some embodiments, there are three connecting members, which are arranged at the outermost layer of the third sleeve corresponding to the third sleeve partition and are distributed at intervals of 120 degrees.

[0107] In some embodiments, the first sleeve has a multi-layer structure, stacked layer by layer from the center outward; the upper portion of the third sleeve has a multi-layer structure, stacked layer by layer from the center outward; wherein the first sleeve and the upper portion of the third sleeve are interspersed with each other. Due to the interlacing of the multi-layer structure of the first sleeve and the multi-layer structure of the upper portion of the third sleeve, when the carrier gas carrying ultrapure water enters the evaporation chamber from the top, it must pass through the inner layer of the first sleeve, encounter the third sleeve baffle, then return and pass through the inner layer of the upper portion of the third sleeve, reaching the top of the evaporation chamber again. It then travels along the outer layer of the first sleeve's inner layer, passes through the outer layer of the upper portion of the third sleeve's inner layer, encounters the third sleeve baffle again, and then returns. Finally, it travels along the outer layer of the third sleeve, passes through the lower portion of the third sleeve, reaches the bottom of the evaporation chamber, then returns to the lower portion of the third sleeve, flows along the second sleeve, toward the third sleeve baffle, and then flows into the second sleeve to exit at the outlet. During this flow, the carrier gas carrying ultrapure water is uniformly heated before flowing out, providing a stable water vapor input to the reaction chamber for oxidizing the wafers therein. It can be understood that this can extend the gas path and increase the heating time of the gas so that the gas is heated stably, improve the diffusion uniformity, and make the gas heating rate uniform to prevent condensation.

[0108] In some embodiments, the second sleeve is a multi-layer structure, stacked layer by layer from the center to the periphery; the lower portion of the third sleeve is a multi-layer structure, stacked layer by layer from the center to the periphery; wherein the second sleeve and the lower portion of the third sleeve are interspersed with each other. Due to the interspersed multi-layer structure of the second sleeve and the multi-layer structure of the lower portion of the third sleeve, when the carrier gas carrying ultrapure water enters the evaporation chamber from the top of the evaporation chamber, it needs to pass through the first sleeve, encounter the partition of the third sleeve, then turn back and pass through the upper portion of the third sleeve, reach the top of the evaporation chamber again, then pass along the outside of the third sleeve through the lower portion of the third sleeve to reach the bottom of the evaporation chamber, then turn back into the outermost layer of the lower portion of the third sleeve, flow along the outermost layer of the second sleeve toward the partition of the third sleeve, then flow into the outermost layer of the second sleeve toward the bottom of the evaporation chamber, and after reaching the bottom of the evaporation chamber again, turn back into the innermost layer of the outermost layer of the lower portion of the third sleeve, then flow along the innermost layer of the outermost layer of the second sleeve toward the partition of the third sleeve again, and so on, and finally pass through the innermost layer of the second sleeve to reach the gas outlet and flow out. During the flow process, the carrier gas carrying ultrapure water is uniformly heated and then flows out, providing a stable water vapor input to the reaction chamber to oxidize the wafers therein. This can extend the gas path, increase the gas's heating time, ensure stable heating, improve diffusion uniformity, and evenly increase the gas's heating rate to prevent condensation.

[0109] In some embodiments, the first sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; the upper part of the third sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; wherein the first sleeve and the upper part of the third sleeve are interspersed with each other; and the second sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; the lower part of the third sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; wherein the second sleeve and the lower part of the third sleeve are interspersed with each other. Since the multi-layer structure of the first sleeve and the multi-layer structure of the upper part of the third sleeve are interlaced with each other, the carrier gas carrying ultrapure water enters the evaporation chamber from the top of the evaporation chamber, and needs to pass through the inner layer of the first sleeve, encounter the third sleeve partition, and then turn back to pass through the inner layer of the upper part of the third sleeve, and reach the top of the evaporation chamber again, and then pass along the outer layer of the inner layer of the first sleeve through the outer layer of the upper part of the third sleeve and encounter the third sleeve partition again and then turn back, and so on, finally along the outside of the third sleeve through the lower part of the third sleeve to reach the bottom of the evaporation chamber, and then turn back into the outermost layer of the lower part of the third sleeve and flow along the outermost layer of the second sleeve to the third sleeve partition, and then flow into the outermost layer of the second sleeve to flow to the bottom of the evaporation chamber, and after reaching the bottom of the evaporation chamber again, turn back into the inner layer of the outermost layer of the lower part of the third sleeve, and then flow along the inner layer of the outermost layer of the second sleeve to the third sleeve partition again, and so on, and finally pass through the innermost layer of the second sleeve to reach the air outlet and flow out. During the flow process, the carrier gas carrying ultrapure water is evenly heated before flowing out, providing a stable water vapor input to the reaction chamber for oxidation of the wafers therein. This can further extend the gas path, increasing the gas's heating time and ensuring stable heating, improving diffusion uniformity and ensuring a uniform gas heating rate to prevent condensation.

[0110] In some embodiments, the overlapping portion of the first sleeve and the upper portion of the third sleeve comprises four layers. For example, the first sleeve comprises a first sleeve inner layer 612 and a first sleeve outer layer 611; the upper portion of the third sleeve comprises a third sleeve upper inner layer 632 and a third sleeve upper outer layer 631. The first sleeve inner layer and the first sleeve outer layer intersect with the third sleeve upper inner layer and the third sleeve upper outer layer, forming a swirling passage that slowly heats the gas.

[0111] In some embodiments, the overlapping portion of the second sleeve and the lower portion of the third sleeve comprises four layers. For example, the second sleeve comprises a second sleeve inner layer 622 and a second sleeve outer layer 621; the lower portion of the third sleeve comprises a third sleeve lower portion inner layer 642 and a third sleeve lower portion outer layer 641. The second sleeve inner layer and the third sleeve outer layer intersect with the third sleeve lower portion inner layer and the third sleeve lower portion outer layer, forming a swirling passage that slowly heats the gas.

[0112] In some embodiments, the overlapping portions of the first and third sleeves comprise four layers, and the overlapping portions of the second and third sleeves comprise four layers. For example, the first sleeve comprises a first sleeve inner layer 612 and a first sleeve outer layer 611; the upper portion of the third sleeve comprises a third sleeve upper inner layer 632 and a third sleeve upper outer layer 631. The second sleeve comprises a second sleeve inner layer 622 and a second sleeve outer layer 621; and the lower portion of the third sleeve comprises a third sleeve lower inner layer 642 and a third sleeve lower outer layer 641. The first sleeve inner layer and the first sleeve outer layer intersect with the third sleeve upper inner layer and the third sleeve upper outer layer, while the second sleeve inner layer and the third sleeve outer layer intersect with the third sleeve lower inner layer and the third sleeve lower outer layer, forming a longer swirling path that slowly heats the gas.

[0113] In some embodiments, the upper portion of the third sleeve and the lower portion of the third sleeve are heated independently. The upper portion of the third sleeve is set to a corresponding heating temperature in conjunction with the first sleeve, while the lower portion of the third sleeve is set to another corresponding heating temperature in conjunction with the second sleeve. This allows the gas flowing through each portion to be heated in an orderly manner, ensuring stable heat diffusion and a slow temperature rise, further improving temperature control accuracy.

[0114] In some embodiments, the diameter of the innermost upper portion of the second sleeve is smaller than the innermost diameter of the second sleeve. That is, the shielding portion 623 shrinks the diameter of the innermost upper portion of the second sleeve, thereby extending the gas passage as much as possible and stabilizing the gas outlet pressure to provide stable gas pressure for the pipeline.

[0115] In some embodiments, the premixing head includes a nozzle 410 connected to the evaporation chamber, the nozzle having a narrower aperture than the premixing head; an ultrapure water inlet extends into the premixing head; and a carrier gas inlet communicates with the premixing head, such that carrier gas flowing into the carrier gas inlet surrounds the ultrapure water inlet, and the carrier gas carries the ultrapure water flowing into the ultrapure water inlet through the nozzle and is sprayed into the evaporation chamber. It is understood that the premixing head with this structure can allow the carrier gas to surround the ultrapure water flowing out of the ultrapure water inlet and carry it into the evaporation chamber, thereby evenly mixing the carrier gas and ultrapure water. The dispersed water droplets are more easily heated, thus preventing condensation in the evaporation chamber. Furthermore, because the nozzle is narrow, a pressure difference is formed between the premixing head and the evaporation chamber, making it easier for the ultrapure water to vaporize.

[0116] According to a second aspect of an embodiment of the present disclosure, there is provided a method for using the aforementioned semiconductor process equipment, comprising:

[0117] The carrier gas flow rate is within the range of 0 to 10 standard liters per minute; the ultrapure water flow rate is within the range of 5 to 20 grams per minute; and the sleeve structure heating temperature range is within the range of 20 to 200 degrees Celsius.

[0118] In some embodiments, the sleeve heating temperature is controlled at 160 degrees Celsius, the carrier gas flow rate is 3 standard liters per minute, and the ultrapure water flow rate is 12 grams per minute. It is understood that these control parameters can ensure the supply of water vapor and create a pressure difference between the premixing head and the evaporation chamber, thereby improving the evaporation effect of the evaporator.

[0119] In some embodiments, the sleeve heating temperature is controlled at 160 degrees Celsius, the carrier gas flow rate is 6 standard liters per minute, and the ultrapure water flow rate is 15 grams per minute. It is understood that these control parameters can ensure the supply of water vapor and create a pressure difference between the premixing head and the evaporation chamber, thereby improving the evaporation effect of the evaporator.

[0120] In some embodiments, the heating temperature of the upper portions of the first and third sleeves is controlled at 100 degrees Celsius; the heating temperature of the lower portions of the second and third sleeves is controlled at 160 degrees Celsius; the carrier gas flow rate is 3 standard liters per minute; and the ultrapure water flow rate is 12 grams per minute. It is understood that at this flow rate, the gas temperature decreases as it is injected into the evaporation chamber under the action of a pressure differential. Controlling the heating temperature of the upper portions of the first and third sleeves at 100 degrees Celsius prevents uneven heating of the gas due to excessive temperature differences, while controlling the heating temperature of the lower portions of the second and third sleeves at 160 degrees Celsius ensures stable rear-end temperature rise and prevents temperature fluctuations at the gas outlet.

[0121] According to the aforementioned public design of the evaporator, the evaporator includes: an evaporation chamber, a premixing head, an air outlet, a carrier gas inlet, and an ultrapure water inlet; the premixing head is located at the top of the evaporation chamber, and the carrier gas inlet and the ultrapure water inlet are connected to the evaporation chamber through the premixing head; the air outlet is located at the bottom of the evaporation chamber and is connected to the reaction chamber; wherein a sleeve structure with a heating function is provided in the evaporation chamber; the sleeve structure includes a first sleeve, a second sleeve and a third sleeve; the first sleeve is connected to the top of the evaporation chamber, the lower part of the first sleeve is located in the evaporation chamber and is suspended, and the premixing head opening is located in the first sleeve; the second sleeve is connected to the bottom of the evaporation chamber, the upper part of the second sleeve is located in the evaporation chamber and is suspended, and the air outlet is located in the second sleeve; the third sleeve is located in the middle of the evaporation chamber, and the upper part of the third sleeve is interspersed with the first sleeve , the lower part of the third sleeve is interspersed with the second sleeve, and the upper part and the lower part of the third sleeve are not connected; the first sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; the upper part of the third sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; wherein, the first sleeve and the upper part of the third sleeve are interspersed with each other layer by layer; the second sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; the lower part of the third sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; wherein, the second sleeve and the lower part of the third sleeve are interspersed with each other layer by layer; the premixing head includes a nozzle connected to the evaporation chamber; the ultrapure water inlet extends into the premixing head; the carrier gas inlet is connected to the premixing head, so that the carrier gas flowing into the carrier gas inlet surrounds the ultrapure water inlet, and the carrier gas carries the ultrapure water flowing into the ultrapure water inlet and is sprayed into the evaporation chamber through the nozzle.

[0122] The evaporators with different sleeve layers designed above were operated according to the process conditions, with an ultrapure water flow rate of 12 g / min and a carrier gas (nitrogen) flow rate of 3 L / min. The simulation results of the outlet temperature and water vapor fluctuation of four groups of experimental evaporators are shown in the following table. Group 0 is a comparative example of a structure without a heating sleeve; wherein, the number of sleeve layers represents that the upper part of the first sleeve and the third sleeve has the same number of layers as the lower part of the second sleeve and the third sleeve, for example, 4 layers means that the upper part of the first sleeve and the third sleeve has 4 layers in total, and the lower part of the second sleeve and the third sleeve also has 4 layers in total; the overall temperature of the sleeve structure is controlled at 160 degrees Celsius. Group 0 is

[0123] serial number Ultrapure water inlet temperature Outlet temperature Sleeve structure temperature Number of sleeve layers Water vapor fluctuations 0 30℃ 110℃ 160℃ 0 ±2％ 1 30℃ 114℃ 160℃ 1 ±1.1％ 2 30℃ 119℃ 160℃ 2 ±0.3％ 3 30℃ 128℃ 160℃ 3 ±0.06％ 4 30℃ 132℃ 160℃ 4 ±0.04％

[0124] It can be seen that for test group 4, when the number of sleeve layers is 4, the outlet temperature is appropriate, the water vapor fluctuation is small, and a stable water vapor supply can be provided. Figure 4 As shown, the heat distribution is uniform and the temperature rise is stable, with good temperature flow field and vaporization effect.

[0125] Based on the simulation results, an evaporator with a 4-layer sleeve was manufactured. The process conditions were an ultrapure water flow rate of 15g / min, a carrier gas (nitrogen) flow rate of 6L / min, and the overall temperature of the sleeve structure was controlled at 160 degrees Celsius. The actual test results obtained were: the outlet temperature was 140°C, and the water vapor fluctuation was 0.6636% <1%, which had a good evaporation effect and met the process and yield requirements.

[0126] The various semiconductor devices described in this embodiment can be used in electronic devices with storage functions. The electronic devices can be terminal devices such as mobile phones, tablet computers, smart bracelets, or personal computers (PCs), servers, workstations, etc. The storage function in the electronic devices can be implemented using the following memories: dynamic random access memory (DRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), magnetic random access memory (MRAM), or resistive access memory (RRAM).

[0127] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A semiconductor process equipment, characterized in that: include: reaction chamber; An evaporator, comprising: an evaporation chamber, a premixing head, a gas outlet, a carrier gas inlet, and an ultrapure water inlet; The premixing head is located at the top of the evaporation chamber, and the carrier gas inlet and the ultrapure water inlet are connected to the evaporation chamber through the premixing head; the gas outlet is located at the bottom of the evaporation chamber and is connected to the reaction chamber; Wherein, a sleeve structure with a heating function is provided in the evaporation chamber; The sleeve structure includes a first sleeve, a second sleeve and a third sleeve; The first sleeve is connected to the top of the evaporation chamber, the lower portion of the first sleeve is located in the evaporation chamber and is suspended, and the premixing head opening is located in the first sleeve; The second sleeve is connected to the bottom of the evaporation chamber, the upper portion of the second sleeve is located in the evaporation chamber and suspended, and the air outlet is located in the second sleeve; The third sleeve is located in the middle of the evaporation chamber, the upper portion of the third sleeve is interlaced with the first sleeve, the lower portion of the third sleeve is interlaced with the second sleeve, and the upper portion and the lower portion of the third sleeve are not connected.

2. The device according to claim 1, characterized in that The first sleeve is a multi-layer structure, with layers stacked from the center to the periphery; The upper portion of the third sleeve is a multi-layer structure, with layers stacked from the center to the periphery; Wherein, the first sleeve and the upper portion of the third sleeve are interspersed with each other in layers.

3. The device according to claim 1 or 2, characterized in that: The second sleeve is a multi-layer structure, with layers stacked from the center to the periphery; The lower part of the third sleeve is a multi-layer structure, which is stacked layer by layer from the center to the periphery; Wherein, the second sleeve and the lower portion of the third sleeve are interspersed with each other in layers.

4. The device according to claim 1, characterized in that The upper portion of the third sleeve and the lower portion of the third sleeve are heated independently of each other.

5. The device according to claim 3, characterized in that The aperture of the upper portion of the innermost layer of the second sleeve is smaller than the diameter of the innermost layer of the second sleeve.

6. The device according to claim 3, characterized in that The upper overlapping portion of the first sleeve and the third sleeve is four layers in total and / or the lower overlapping portion of the second sleeve and the third sleeve is four layers in total.

7. The device according to claim 1, characterized in that The premixing head includes a nozzle connected to the evaporation chamber; The ultrapure water inlet extends into the premixing head; the carrier gas inlet is connected to the premixing head, so that the carrier gas flowing into the carrier gas inlet surrounds the ultrapure water inlet, and the carrier gas carries the ultrapure water flowing into the ultrapure water inlet and is sprayed into the evaporation chamber through the nozzle.

8. A method for using the semiconductor process equipment according to any one of claims 1 to 7, characterized in that: include: The carrier gas flow rate is in the range of 0 to 10 standard liters per minute; The ultrapure water flow rate is in the range of 5 to 20 grams per minute; The heating temperature range of the sleeve structure is within the range of 20 to 200 degrees Celsius.

9. The method of use according to claim 8, characterized in that: The heating temperature of the sleeve structure is controlled at 160 degrees Celsius; The carrier gas flow rate is 3 standard liters per minute; The ultrapure water flow rate is 12 grams per minute.

10. The method of use according to claim 8, characterized in that: The heating temperature of the sleeve structure is controlled at 160 degrees Celsius; The carrier gas flow rate is 6 standard liters per minute; The ultrapure water flow rate is 15 grams per minute.

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