Multi-level pulse power supply and semiconductor process equipment

Abstract

The invention relates to a multi-level pulse power supply and semiconductor process equipment. The multi-level pulse power supply comprises a high-frequency isolation conversion module and a switch module, wherein the high-frequency isolation conversion module is electrically connected with the switch module; the high-frequency isolation conversion module is used for accessing a direct-current bus voltage and performing voltage conversion processing on the direct-current bus voltage to generate a plurality of pre-processing voltages; and the switch module is used for responding to an externally input control signal and switching the state of the switch module so as to perform voltage amplitude modulation based on the plurality of pre-processing voltages and output a target voltage. The multi-level pulse power supply can output multi-level pulses.

Description

Technical Field

[0001] This application relates to the field of power supply technology, and in particular to a multi-level pulse power supply and semiconductor process equipment. Background Technology

[0002] Pulse power supplies can convert steady-state DC or AC power into pulse signals with specific waveform parameters. Pulse power supplies are widely used in industrial processing, medical equipment, particle acceleration, high-power microwaves, plasma excitation, and electrochemical processing. However, different applications have different requirements for pulse amplitude, waveform, repetition frequency, and stability.

[0003] For semiconductor applications, the pulse power supplies in related technologies are single-level pulse power supplies. Single-level pulse power supplies use inductors to store energy and then release it directly to the load via a power switch. However, single-level pulse power supplies have only one number of output levels, which cannot meet the needs of complex application scenarios requiring multi-level output.

[0004] Therefore, there is an urgent need for a pulse power supply that can meet the requirements of multi-level output in complex application scenarios. Summary of the Invention

[0005] Therefore, it is necessary to provide a multi-level pulse power supply and semiconductor process equipment that output multi-level pulses.

[0006] In a first aspect, a multi-level pulse power supply is provided, comprising: a high-frequency isolation conversion module and a switching module, wherein the high-frequency isolation conversion module is electrically connected to the switching module;

[0007] The high-frequency isolation conversion module is used to receive the DC bus voltage and perform voltage conversion processing on the DC bus voltage to generate multiple pre-processed voltages.

[0008] The switching module is used to respond to externally input control signals, switch the state of the switching module, and perform voltage amplitude modulation based on multiple pre-processed voltages to output the target voltage.

[0009] In one embodiment, the high-frequency isolation conversion module includes multiple conversion circuits, wherein each conversion circuit is connected to the switching module for receiving the DC bus voltage, performing voltage conversion processing on the DC bus voltage to generate a corresponding pre-processed voltage, and transmitting the pre-processed voltage to the switching module.

[0010] In one embodiment, the high-frequency isolation conversion module includes: a first conversion circuit and a second conversion circuit;

[0011] The first conversion circuit is connected to the switching module and is used to receive the DC bus voltage, perform voltage conversion processing on the DC bus voltage to generate a first pre-processed voltage, and transmit the first pre-processed voltage to the switching module.

[0012] The second conversion circuit is connected to the switching module and is used to receive the DC bus voltage, perform voltage conversion processing on the DC bus voltage to generate a second pre-processed voltage, and transmit the second pre-processed voltage to the switching module.

[0013] In one embodiment, the first conversion circuit comprises a first inverter circuit, a first transformer, and a first rectifier circuit connected in sequence. The first inverter circuit is used to connect to the DC bus voltage and invert the DC bus voltage into a high-frequency voltage. The first transformer is used to isolate and boost the high-frequency voltage to obtain a first voltage after isolation and boosting. The first rectifier circuit is used to rectify the first voltage and output a first pre-processed voltage to the switching module.

[0014] The second conversion circuit consists of a second inverter circuit, a second transformer, and a second rectifier circuit connected in sequence. The second inverter circuit is used to connect to the DC bus voltage and invert the DC bus voltage into a second high-frequency voltage. The second transformer is used to isolate and boost the second high-frequency voltage to obtain the isolated and boosted second voltage. The second rectifier circuit is used to rectify the second voltage and output a second pre-processed voltage to the switching module.

[0015] In one embodiment, the switching module includes at least a plurality of switching circuits, the input terminal of each switching circuit being connected to its corresponding conversion circuit, and the switching circuits being connected sequentially to each other.

[0016] Each of the switching circuits is used to switch the circuit state in response to an externally input control signal, so as to perform voltage amplitude modulation on the corresponding preprocessed voltage and output the target voltage.

[0017] In one embodiment, the switching module includes: a first switching circuit and a second switching circuit; the first switching circuit is connected to the second switching circuit;

[0018] The input terminal of the first switching circuit is connected to the first conversion circuit, and the output terminal of the first switching circuit serves as the positive terminal of the multi-level pulse power supply. It is used to respond to the externally input control signal, switch the state of the first switching circuit, and perform amplitude modulation on the first preprocessed voltage to output the first voltage.

[0019] The input terminal of the second switching circuit is connected to the second conversion circuit, and the output terminal of the second switching circuit serves as the negative terminal of the multi-level pulse power supply. It is used to respond to externally input control signals, switch the state of the second switching circuit, and perform voltage amplitude modulation on the second preprocessed voltage to output the second voltage.

[0020] In one embodiment, the first switching circuit includes a first energy storage element and a first half-bridge circuit;

[0021] The two ends of the first energy storage element are respectively connected to the first conversion circuit and the first half-bridge circuit, for storing energy based on the first preprocessing voltage;

[0022] The output terminal of the first half-bridge circuit serves as the positive terminal of the multi-level pulse power supply. It is used to respond to externally input control signals, switch the state of the first half-bridge circuit, and modulate the voltage amplitude across the first energy storage element to output the first voltage.

[0023] In one embodiment, the first half-bridge circuit includes a first switch and a second switch, one end of the first switch is connected to one end of the second switch, the other end of the first switch is connected to one end of the first energy storage element, and the other end of the second switch is connected to the other end of the first energy storage element.

[0024] In one embodiment, the state of the first half-bridge circuit includes at least one of the following: a first state where the first switch is on and the second switch is off, a second state where the first switch is off and the second switch is on, and a third state where the first switch is off and the second switch is off.

[0025] In the first state, the first voltage is the voltage across the first energy storage element; in the second state, the first voltage is 0; and in the third state, the first voltage is a floating voltage.

[0026] In one embodiment, the second switching circuit includes a second energy storage element and a second half-bridge circuit;

[0027] The two ends of the second energy storage element are respectively connected to the second conversion circuit and the second half-bridge circuit, for storing energy based on the second pre-processing voltage;

[0028] The output terminal of the second half-bridge circuit serves as the negative terminal of the multi-level pulse power supply. It is used to respond to externally input control signals, switch the state of the second half-bridge circuit, and modulate the amplitude of the voltage across the second energy storage element to output a second voltage.

[0029] In one embodiment, the second half-bridge circuit includes a third switch and a fourth switch, one end of the third switch being connected to one end of the fourth switch, the other end of the third switch being connected to one end of the second energy storage element, and the other end of the fourth switch being connected to the other end of the second energy storage element.

[0030] In one embodiment, the state of the second half-bridge circuit includes at least one of the following: a fourth state in which the third switch is on and the fourth switch is off; a fifth state in which the third switch is off and the fourth switch is on; and a sixth state in which the third switch is off and the fourth switch is off.

[0031] In the fourth state, the second voltage is 0; in the fifth state, the second voltage is the voltage across the second energy storage element; and in the sixth state, the second voltage is a floating voltage.

[0032] In one embodiment, the multi-level pulse power supply further includes a filtering module, which is electrically connected to the switching module. The filtering module is used to filter the target voltage to obtain a filtered voltage.

[0033] In one embodiment, the filtering module includes an impedance network and an inductor. One end of the impedance network is electrically connected to the output terminal of the first switching circuit in the switching module, and the other end of the impedance network serves as the positive power supply of the multi-level pulse power supply.

[0034] One end of the inductor is electrically connected to the output terminal of the second switching circuit in the switching module, and the other end of the inductor serves as the negative terminal of the multi-level pulse power supply.

[0035] In one embodiment, the filtering state of the impedance network includes resistance output filtering and inductance output filtering. If the load impedance connected between the positive terminal and the negative terminal of the power supply is greater than a first preset value, the filtering state of the impedance network is switched to resistance output filtering.

[0036] When the load impedance is less than the second preset value, the filtering state of the impedance network switches to inductor output filtering; when the first preset value is greater than the second preset value.

[0037] In a second aspect, a semiconductor process apparatus is provided, comprising the multi-level pulse power supply and the semiconductor process apparatus body described in any one of the above.

[0038] In the aforementioned multi-level pulse power supply and semiconductor process equipment, the switching module switches its state to the state required by the externally input control signal. In this state, the multiple pre-processed voltages output by the high-frequency isolation conversion module are amplitude modulated, thereby outputting multiple pulses of different levels. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1 The module structure of a multi-level pulse power supply is shown in one embodiment.

[0041] Figure 2 for Figure 1 A modular structure for a medium-to-high frequency isolation converter module;

[0042] Figure 3 for Figure 1 Another module structure for the medium-to-high frequency isolation converter module;

[0043] Figure 4 This is a modular structure for the first conversion circuit;

[0044] Figure 5 This is a high-frequency isolation conversion module according to a specific embodiment;

[0045] Figure 6 for Figure 1 A modular structure of a switch module;

[0046] Figure 7 for Figure 1 Another module structure for the switch module;

[0047] Figure 8 This is a first switching circuit in a specific embodiment;

[0048] Figure 9 This is a second switching circuit in a specific embodiment;

[0049] Figure 10 The module structure of a multi-level pulse power supply is shown in another embodiment;

[0050] Figure 11 An impedance network in a specific embodiment;

[0051] Figure 12This is a multi-level pulse power supply in a specific embodiment;

[0052] Figure 13 This is a schematic diagram of the switching state and voltage output state in a specific embodiment.

[0053] Figure 14 This is an example of the equivalent circuit of the filter and the cavity during operation in a specific embodiment.

[0054] Figure 15 This is a schematic diagram of the chamber voltage without an impedance network in a specific embodiment.

[0055] Figure 16 This is a schematic diagram of the chamber voltage in a specific embodiment with an impedance network.

[0056] Explanation of reference numerals in the attached figures: 100, high-frequency isolation conversion module; 200, switching module; 300, filtering module; 102, first conversion circuit; 104, second conversion circuit; 202, first switching circuit; 204, second switching circuit; 302, impedance network. Detailed Implementation

[0057] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0058] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0059] It is understood that the terms "first," "second," etc., used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of this application, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0060] It is understood that the term "connection" in the following embodiments should be understood as "electrical connection," "communication connection," etc., if the connected circuits, modules, units, etc., have electrical signal or data transmission with each other.

[0061] It is understandable that "at least one" refers to one or more, and "multiple" refers to two or more. "At least a part of an element" refers to part or all of an element.

[0062] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, the term “and / or” as used in this specification includes any and all combinations of the associated listed items.

[0063] Understandably, in semiconductor processes such as plasma etching, sputtering, and PEALD, the electrode or target surface is continuously subjected to a negative bias, which attracts high-energy positive ions for bombardment, causing sputtering damage, corrosion, or target poisoning. Simultaneously, the reaction process accumulates a large number of charged particles (ions / electrons) on the surface. If these particles are not removed in time, they can cause arcing, particle defects, or damage to devices during semiconductor etching.

[0064] In related technologies, single-level power supplies are commonly used. However, the switching characteristics, control resolution, load characteristics, and process safety requirements of single-level pulse power supplies limit the pulse width adjustment limit, making it impossible to truly achieve a full-range duty cycle of 0–100%. In semiconductor etching, the duty cycle of the pulse power supply affects etching rate and etching directionality. A duty cycle below 0–100% limits the process window, making it difficult to flexibly set the plasma turn-off / on time, and reducing ion energy distribution, etching selectivity, and surface damage control capabilities, thus affecting etching accuracy and device yield. Therefore, to address the problems of single-level power supplies, a multi-level pulse power supply for semiconductor etching is proposed. This multi-level pulse power supply can output multiple levels, configuring different output levels during etching operations and intervals to achieve electrode protection and charged particle removal.

[0065] like Figure 1 As shown, a multi-level pulse power supply in one embodiment includes a high-frequency isolation conversion module 100 and a switching module 200, which are electrically connected. The high-frequency isolation conversion module 100 is used to receive a DC bus voltage and perform voltage conversion processing on the DC bus voltage to generate multiple pre-processed voltages. The switching module 200 is used to switch the state of the switching module 200 in response to an externally input control signal, so as to perform voltage amplitude modulation based on multiple pre-processed voltages and output a target voltage.

[0066] The high-frequency isolation converter module 100 sequentially inverts, isolates, boosts, and rectifies the input DC bus voltage to obtain multiple pre-processed voltages, which are DC voltages. The high-frequency isolation converter module 100 may include a transformer, power switching devices, and a rectifier. The transformer is used to achieve electrical isolation between the input and output; the power switching devices may be, but are not limited to, MOSFETs, and their corresponding structures are used to invert the input voltage; the rectifier is used to rectify the AC voltage output from the transformer into a DC voltage.

[0067] The switching module 200 can select and combine multiple pre-processed voltages by controlling the on and off states of different power switching devices, thereby forming a multi-level pulse according to a preset pulse sequence. Switching devices generally refer to components that can connect, disconnect, or switch the current path in a circuit. Switching devices can be, but are not limited to, semiconductor electronic switching devices, such as diodes, bipolar transistors, or field-effect transistors. For example, the control terminal of the switching module 200 can respond to externally input control signals to switch the state of the switching module 200 to perform voltage amplitude modulation based on multiple pre-processed voltages and output a target voltage. The states of the switching module include various switching states that enable the multi-level power supply to output multiple levels.

[0068] It is understandable that if the power supply output can be adjusted to different voltage levels (e.g., 0V, 3.3V, 5V, 9V, 12V, etc.), then in pulse modulation, different voltage outputs can be switched within a pulse sequence, thereby forming multi-level pulses.

[0069] In the aforementioned multi-level pulse power supply, the switching module 200 switches its state to the state required by the control signal in response to an externally input control signal. In this state, the voltage amplitude of the multiple pre-processed voltages output by the high-frequency isolation conversion module 100 is modulated to obtain the target state in the corresponding state. Furthermore, the multiple pre-processed voltages can be adjusted to different voltages according to the state of the switching module 200, thereby outputting multiple level pulses.

[0070] The high-frequency isolation converter module 100 can output multiple pre-processed voltages to meet the multi-level requirements of semiconductor processes. The high-frequency isolation converter model contains multiple conversion circuits. In an exemplary embodiment, the high-frequency isolation converter module 100 includes multiple conversion circuits, each connected to a switching module. Each conversion circuit receives a DC bus voltage, performs voltage conversion processing on the DC bus voltage to generate a corresponding pre-processed voltage, and transmits the pre-processed voltage to the switching module. Furthermore, the switching module modulates the voltage amplitude of the pre-processed voltage output by each conversion circuit to obtain different voltages, thereby achieving multi-level output.

[0071] For example, such as Figure 2 As shown, the high-frequency isolation conversion module includes conversion circuit 1, conversion circuit 2, ..., conversion circuit n, where n is a positive integer and can be set according to actual needs.

[0072] In one exemplary embodiment, such as Figure 3 As shown, the high-frequency isolation conversion module 100 includes: a first conversion circuit 102 and a second conversion circuit 104; the first conversion circuit 102 is connected to the switch module 200, and is used to receive the DC bus voltage, perform voltage conversion processing on the DC bus voltage to generate a first pre-processed voltage, and transmit the first pre-processed voltage to the switch module 200; the second conversion circuit 104 is connected to the switch module 200, and is used to receive the DC bus voltage, perform voltage conversion processing on the DC bus voltage to generate a second pre-processed voltage, and transmit the second pre-processed voltage to the switch module 200.

[0073] The inversion, isolation boost, and rectification processes can be implemented based on existing circuit structures and will not be elaborated upon here. The high-frequency isolation converter module 100 includes two converter circuits: a first converter circuit 102 and a second converter circuit 104. The first converter circuit 102 and the second converter circuit 104 are connected in parallel to the same DC bus. The first converter circuit 102 sequentially performs inversion, isolation boost, and rectification on the input DC bus voltage to obtain a first pre-processed voltage. The second converter circuit 104 sequentially performs inversion, isolation boost, and rectification on the input DC bus voltage to obtain a second pre-processed voltage. In other words, the second converter circuit 104 can use the same circuit structure as the first converter circuit 102 to generate the second pre-processed voltage. The second converter circuit 104 and the first converter circuit 102 have the same circuit structure, but the parameters of the two circuits can be the same or different. In different application scenarios, the first preprocessing voltage and the second preprocessing voltage may be equal or unequal. When the first preprocessing voltage and the second preprocessing voltage are unequal, the winding ratio of the transformers in the first conversion circuit 102 and the second conversion circuit 104 may be set differently to output preprocessing voltages of different amplitudes.

[0074] The switching module 200 can achieve multi-level output by controlling different combinations of on / off states of power switches based on the acquired first and second pre-processed voltages. For example, the first conversion circuit 102 can output V1, and the second conversion circuit 104 can output V2. The switching module 200 achieves multi-level output based on V1 and V2. For instance, the multi-level pulse power supply can output different levels of multi-level pulses, such as V1, V2, V1+V2, and 0, within one cycle.

[0075] It is understood that the circuit structure of each of the multiple conversion circuits can be the same as the circuit structure of the first conversion circuit 102 or the second conversion circuit 104 described above.

[0076] Furthermore, in an exemplary embodiment, such as Figure 4 As shown, the first conversion circuit 102 consists of a first inverter circuit, a first transformer, and a first rectifier circuit connected in sequence. The first inverter circuit is used to connect to the DC bus voltage and invert the DC bus voltage into a high-frequency voltage. The first transformer is used to isolate and boost the high-frequency voltage to obtain the first voltage after isolation and boosting. The first rectifier circuit is used to rectify the first voltage and output the first pre-processed voltage to the switching module 200.

[0077] The second conversion circuit 104 consists of a second inverter circuit, a second transformer, and a second rectifier circuit connected in sequence. The second inverter circuit is used to connect to the DC bus voltage and invert the DC bus voltage into a second high-frequency voltage. The second transformer is used to isolate and boost the second high-frequency voltage to obtain the isolated and boosted second voltage. The second rectifier circuit is used to rectify the second voltage and output the second pre-processed voltage to the switching module 200.

[0078] The first inverter circuit can be a circuit structure that converts DC bus voltage into high-frequency AC voltage. This circuit structure can be, but is not limited to, a full-bridge structure, using MOSFETs or IGBTs as switching devices to achieve efficient voltage conversion. The first inverter circuit includes a first inverter bridge and a first resonant circuit, which are electrically connected. The first inverter bridge is used to convert direct current (DC) into alternating current (AC). The first inverter bridge includes multiple power switching devices (such as MOSFETs, IGBTs, GTOs, etc.). The inverter bridge can be multiple power switching devices arranged in a bridge structure, and by controlling their on / off sequence, positive and negative half-cycle AC outputs are formed. The first inverter bridge can be, but is not limited to, an H-bridge topology. In an exemplary embodiment, the first inverter bridge includes four power switching devices, which can be, but are not limited to, transistor-type devices (such as MOSFETs). For example, the first inverter bridge includes four MOSFETs. The implementation principle of the first inverter bridge can be achieved through existing methods, which will not be elaborated here.

[0079] It is understandable that the core purpose of the resonant circuit in this embodiment is not filtering in the traditional sense, but to use the energy exchange between the inductor and capacitor in the resonant circuit during the switching commutation to enable the power device to switch under zero voltage or zero current conditions, avoid instantaneous jumps, and thus reduce switching losses and improve efficiency.

[0080] The inverter bridge outputs a high-frequency square wave voltage. After passing through a resonant circuit, the output current approximates a sinusoidal waveform. The resonant circuit can be a resonant loop, which can be, but is not limited to, an LC loop (i.e., capacitor + inductor). Transformers can be used for voltage transformation, isolation, impedance matching, and energy transfer. A transformer may include an iron core and windings, and the winding ratio can be set according to the required output voltage. Figure 5 As shown, the curved lines on the left and right sides of the first transformer represent windings, i.e., coils, and the vertical line in the middle represents the iron core. This indicates that the first transformer is an iron-core transformer, with the left winding being the input (primary side) and the right winding being the output (secondary side). It can be understood that the structure of a transformer can be, but is not limited to, those described above. Figure 4 The structure shown can also be other existing structures, which will not be elaborated here. Optionally, the first transformer isolates and boosts the voltage output from the first inverter circuit to obtain the first voltage.

[0081] The first rectifier circuit may include a rectifier bridge, which may consist of four diodes connected in a specific bridge structure to convert alternating current (AC) into direct current (DC). That is, the first rectifier circuit rectifies the first voltage and outputs the first pre-processed voltage to the switching module 200. The diodes may be of the same type or different types, and no specific limitation is made here.

[0082] It should be noted that the second inverter circuit includes a second inverter bridge and a second resonant circuit. The specific definitions of the second inverter bridge and the second resonant circuit can be found in the descriptions of the first inverter bridge and the second resonant circuit. However, the models or parameters of the components in the first inverter bridge and the second resonant circuit can be the same or different. The structures of the first transformer and the second transformer can be the same or different; this embodiment uses the example of the first transformer and the second transformer having the same structure. The specific definitions of the second rectifier circuit can be found in the reference to the first rectifier circuit, and will not be repeated here.

[0083] In one exemplary embodiment, such as Figure 5The diagram shows the structure of a high-frequency isolation converter module. The first inverter bridge in the first converter circuit 102 includes four power switching devices and four MOSFETs, namely, a first transistor Q1, a second transistor Q2, a third transistor Q3, and a fourth transistor Q4. The source of the first transistor Q1 and the drain of the second transistor Q2 are connected. The drains of the first transistor Q1 and the third transistor Q3 are both connected to the positive terminal of the DC bus voltage connected to the high-frequency isolation converter module 100. The sources of the second transistor Q2 and the fourth transistor Q4 are both connected to the negative terminal of the DC bus voltage connected to the high-frequency isolation converter module 100. The source of the third transistor Q3 and the drain of the fourth transistor Q4 are connected. The first resonant circuit, formed by connecting an inductor and a capacitor in series, has its output connected to the input of a first transformer. One input of the first resonant circuit is connected to the junction of the source of the first transistor Q1 and the drain of the second transistor Q2, while the other input is connected to the junction of the source of the third transistor Q3 and the drain of the fourth transistor Q4. The output of the first transformer is connected to the input of the first rectifier circuit, which in turn is connected to the input of the first switching circuit. It should be noted that the input of the first resonant circuit can be understood as being connected to one side of the preceding first inverter bridge to receive the high-frequency voltage output from the first inverter bridge; the output of the first resonant circuit can be understood as being connected to one side of the primary winding of the subsequent first transformer, sending the voltage processed by the first resonant circuit to the primary winding of the first transformer.

[0084] The second inverter bridge in the second conversion circuit 104 includes four power switching devices, which can be, but are not limited to, transistor-type devices (such as MOSFETs). The circuit structure is the same as that of the first inverter bridge. The second inverter bridge includes four MOSFETs, namely, the first transistor Q1, the second transistor Q2, the third transistor Q3, and the fourth transistor Q4. The source of the first transistor Q1 and the drain of the second transistor Q2 are connected. The drains of the first transistor Q1 and the third transistor Q3 are both connected to the positive terminal of the DC bus voltage connected to the high-frequency isolation conversion module 100. The sources of the second transistor Q2 and the fourth transistor Q4 are both connected to the negative terminal of the DC bus voltage connected to the high-frequency isolation conversion module 100. The source of the third transistor Q3 and the drain of the fourth transistor Q4 are connected.

[0085] The second resonant circuit, formed by connecting an inductor and a capacitor in series, has its output connected to the input of the second transformer. One input of the second resonant circuit is connected to the junction of the source of the first transistor Q1 and the drain of the second transistor Q2, while the other input is connected to the junction of the source of the third transistor Q3 and the drain of the fourth transistor Q4. The output of the second transformer is connected to the input of the second rectifier circuit, which in turn is connected to the input of the second switching circuit. Both the first and second rectifier circuits are rectifier bridges. It should be noted that the input of the second resonant circuit can be understood as being connected to one side of the preceding second inverter bridge to receive the high-frequency voltage output from it; the output of the second resonant circuit can be understood as being connected to one side of the primary winding of the subsequent second transformer, sending the voltage processed by the second resonant circuit to the primary winding of the second transformer.

[0086] In this method, the first conversion circuit 102 and the second conversion circuit 104 are respectively composed of an inverter circuit, a transformer and a rectifier circuit connected in sequence. The parameters of each component in the two conversion circuits can be set independently according to actual needs, and can output pre-processed voltages with different voltage amplitudes, thereby outputting multi-level pulses.

[0087] Since the high-frequency isolation conversion module 100 outputs multiple pre-processed voltages, in order to achieve multi-level pulse output, the multi-level pulse power supply needs to support different voltage levels. In an exemplary embodiment, the switching module includes at least multiple switching circuits, the input terminal of each switching circuit is connected to its corresponding conversion circuit, and the switching circuits are connected sequentially; each switching circuit is used to respond to an externally input control signal to switch the circuit state of the switching circuit to modulate the voltage amplitude of the corresponding pre-processed voltage to obtain its corresponding modulated voltage. Based on the multiple modulated voltages, a target voltage is output, thereby forming a pulse output circuit with more level combinations.

[0088] like Figure 6 As shown, the high-frequency isolation conversion module includes conversion circuit 1, conversion circuit 2, ..., conversion circuit n, where n is a positive integer and can be determined according to actual needs. Correspondingly, the switching module 200 includes switching circuit 1, switching circuit 2, ..., switching circuit n.

[0089] In one exemplary embodiment, such as Figure 7As shown, the switching module 200 includes a first switching circuit 202 and a second switching circuit 204; the loop terminal of the first switching circuit 202 is connected to the loop terminal of the second switching circuit 204; the input terminal of the first switching circuit 202 is connected to the first conversion circuit 102, and the output terminal of the first switching circuit 202 serves as the positive terminal of the multi-level pulse power supply, used to respond to externally input control signals, switch the state of the first switching circuit 202 to modulate the voltage amplitude of the first pre-processed voltage, and output the first voltage; the input terminal of the second switching circuit 204 is connected to the second conversion circuit 104, and the output terminal of the second switching circuit 204 serves as the negative terminal of the multi-level pulse power supply, used to respond to externally input control signals, switch the state of the second switching circuit 204 to modulate the voltage amplitude of the second pre-processed voltage, and output the second voltage.

[0090] The multiple preprocessing voltages include at least a first preprocessing voltage and a second preprocessing voltage. The first switching circuit 202 and the second switching circuit 204 have the same circuit structure, but the parameters of the components in the circuit structure may be the same or different. Both the first switching circuit 202 and the second switching circuit 204 include multiple switching devices, and the number of switching devices in the first switching circuit 202 and the second switching circuit 204 may be the same. The number of switching devices in each switching circuit may be two, three, or four. The number of switching devices for each switching circuit can be set according to actual needs, as long as it can satisfy the voltage amplitude modulation of the corresponding preprocessing voltage.

[0091] For example, the first switching circuit 202 receives a first pre-processed voltage and switches its switching state according to a control signal to modulate the voltage amplitude of the first pre-processed voltage and output a first voltage. The second switching circuit 204 receives a second pre-processed voltage and switches its switching state according to a control signal to modulate the voltage amplitude of the second pre-processed voltage and output a first voltage. By combining the on and off states of the switching devices in the first switching circuit 202 and the second switching circuit 204, the power supply can output voltages at different levels.

[0092] The following provides a specific circuit structure of the first switching circuit 202 in one embodiment. The first switching circuit 202 includes a first energy storage element and a first half-bridge circuit. The two ends of the first energy storage element are respectively connected to the first conversion circuit 102 and the first half-bridge circuit, and are used to store energy based on the first pre-processing voltage. The output end of the first half-bridge circuit serves as the positive terminal of the multi-level pulse power supply, and is used to respond to the externally input control signal to switch the state of the first half-bridge circuit so as to modulate the amplitude of the voltage across the first energy storage element and output the first voltage.

[0093] The first energy storage element stores energy and releases it when needed. This element can be any type of energy storage device that supports a duty cycle of 0-100%, such as, but not limited to, a capacitor. In this example, a capacitor is used as the first energy storage element. The first energy storage element stores the first pre-processed voltage output from the first conversion circuit 102 in the high-frequency isolation conversion module 100. The input of the first half-bridge circuit is connected to the first energy storage element, and its output serves as the positive terminal of the power supply, outputting the first voltage. The first half-bridge circuit can be composed of two or more power switching devices, such as MOSFETs, IGBTs, or SiC devices. A half-bridge can be understood as a bridge arm with two main on states and one off state, controlling the voltage polarity at the output terminal by switching the upper and lower transistors.

[0094] It should be noted that when both switching devices in a half-bridge circuit are turned on simultaneously, it will cause a direct short circuit between the positive and negative terminals of the multi-level pulse power supply.

[0095] Furthermore, the first half-bridge circuit includes a first switch and a second switch. One end of the first switch is connected to one end of the second switch, and the other end of the first switch is connected to one end of the first energy storage element. The other end of the second switch is connected to the other end of the first energy storage element. That is, the source of the first switch and the drain of the second switch are connected, the drain of the first switch is connected to one end of the first energy storage element, and the source of the second switch is connected to the other end of the first energy storage element.

[0096] The first switch can be a power semiconductor device used to switch the circuit on and off under the action of a control signal. It can be, but is not limited to, a MOSFET. For example, the first switch can be, but is not limited to, a silicon-based or silicon carbide-based field-effect transistor. The second switch can also be a power semiconductor device, with a function corresponding to the first switch, used to switch voltage polarity in conjunction with the first switch. It can be obtained by the same or different types of power switching devices, which will not be elaborated here.

[0097] The source of the first switch is connected to the drain of the second switch, forming an intermediate node. This node serves as the output terminal of the half-bridge circuit and is connected to the positive terminal of the multi-level pulse power supply to output the modulated first voltage. The drain of the first switch is connected to one end of the first energy storage element, and the source of the second switch is connected to the other end of the first energy storage element, so that the two switches are alternately turned on under the action of the control signal, thereby modulating the output voltage.

[0098] For example, the first switch and the second switch are alternately turned on and off according to the drive of an external control signal. When the first switch is on and the second switch is off, one end of the first energy storage element is connected to the output terminal, and the other end is grounded. At this time, the first energy storage element releases energy and outputs a positive voltage. When the second switch is on and the first switch is off, the other end of the first energy storage element is connected to the output terminal, forming a reverse voltage or zero potential output. Furthermore, by controlling the on-time ratio of the two switches, precise adjustment of the output voltage amplitude and pulse width can be achieved. Furthermore, the state of the first half-bridge circuit includes at least one of the following: a first state where the first switch is on and the second switch is off, a second state where the first switch is off and the second switch is on, and a third state where the first switch is off and the second switch is off; wherein, the first voltage in the first state is the voltage across the first energy storage element, the first voltage in the second state is 0, and the first voltage in the third state is a floating voltage.

[0099] The floating state can be understood as the first switch being open and the second switch being open, with both ends of the load isolated from the power supply, and the voltage point in a high-resistance state.

[0100] For example, in the first state, the output terminal is connected to the energy storage element and presents a positive voltage; in the second state, the output terminal is shorted to the reference potential and presents zero voltage; in the third state, the output terminal is in a high-impedance state and presents a floating voltage. In other words, by combining different states, the power supply can output multi-level pulses. This structure maintains good dynamic response and stability even under high-frequency operating conditions, making it suitable for multi-level pulse applications requiring high waveform accuracy and response speed, such as semiconductor manufacturing.

[0101] Furthermore, the first switching circuit 202 also includes a first resistor, the two ends of which are respectively connected to the connection lines of the first energy storage element and the first half-bridge circuit. This first resistor can continuously charge the first energy storage element or stabilize its voltage. In an exemplary embodiment, such as... Figure 8 The diagram shown is a structural diagram of the first switching circuit. The first energy storage element is a capacitor V2, the first resistor is a first switch is a switching transistor SW1, and the second switch is a switching transistor SW2. The specific connection method can be achieved in the manner defined above, and will not be elaborated here.

[0102] The following provides a specific circuit structure of the second switching circuit 204 in one embodiment. The second switching circuit 204 includes a second energy storage element and a second half-bridge circuit. The two ends of the second energy storage element are respectively connected to the second conversion circuit 104 and the second half-bridge circuit for storing energy based on the second preprocessing voltage. The output end of the second half-bridge circuit serves as the negative terminal of the multi-level pulse power supply and is used to switch the state of the second half-bridge circuit in response to the externally input control signal, so as to modulate the voltage amplitude across the second energy storage element and output the second voltage.

[0103] The second energy storage element stores energy and releases it when needed. This second energy storage element can be any element supporting a duty cycle of 0-100%, such as, but not limited to, a capacitor. In this example, a capacitor is used as the second energy storage element. The second energy storage element stores the second pre-processed voltage output from the second conversion circuit 104 in the high-frequency isolation conversion module 100. The input terminal of the second half-bridge circuit is connected to the second energy storage element, and its output terminal serves as the negative terminal of the power supply, used to output the second voltage. The second half-bridge circuit can be composed of two or more power switching devices, such as MOSFETs, IGBTs, or SiC devices. The operating principle of the second half-bridge circuit is the same as that of the second half-bridge circuit, and will not be elaborated further here.

[0104] It should be noted that when both switching devices in a half-bridge circuit are simultaneously turned on, it will cause a direct short circuit between the positive and negative terminals of the multi-level pulse power supply. Since the output terminal of the first switching circuit 202 serves as the positive terminal of the multi-level pulse power supply, and the output terminal of the second switching circuit 204 serves as the negative terminal, the output voltage values ​​will be different when the switching devices at the same position in the first and second half-bridge circuits are turned on or off.

[0105] In one exemplary embodiment, the second half-bridge circuit includes a third switch and a fourth switch. One end of the third switch is connected to one end of the fourth switch, and the other end of the third switch is connected to one end of the second energy storage element. The other end of the fourth switch is also connected to the other end of the second energy storage element. For example, the source of the third switch and the drain of the fourth switch are connected, the drain of the third switch is connected to one end of the second energy storage element, and the source of the fourth switch is connected to the other end of the second energy storage element.

[0106] The third switch can be a power semiconductor device used to switch the circuit on and off under the action of a control signal. It can be, but is not limited to, a MOSFET. For example, the third switch can be, but is not limited to, a silicon-based or silicon carbide-based field-effect transistor. The fourth switch can also be a power semiconductor device, whose function corresponds to the third switch. It is used to switch the voltage polarity in conjunction with the third switch. It can be obtained by the same or different types of power switching devices, which will not be elaborated here.

[0107] One end of the third switch is connected to one end of the fourth switch, forming an intermediate node. This node serves as the output terminal of the second half-bridge circuit and is connected to the negative terminal of the multi-level pulse power supply to output the modulated second voltage. The other end of the third switch is connected to one end of the first energy storage element, and the other end of the fourth switch is connected to the other end of the first energy storage element, so that the two switches are alternately turned on under the action of the control signal, thereby modulating the voltage across the energy storage element.

[0108] For example, the third and fourth switches are alternately turned on and off according to an external control signal. When the third switch is on and the fourth switch is off, one end of the first energy storage element is connected to the output terminal, and the other end is grounded. At this time, the first energy storage element releases energy and outputs a positive voltage. When the fourth switch is on and the third switch is off, the other end of the first energy storage element is connected to the output terminal, forming a reverse voltage or zero potential output. Furthermore, by controlling the on-time ratio of the two switches, precise adjustment of the output voltage amplitude and pulse width can be achieved.

[0109] Furthermore, the state of the second half-bridge circuit includes at least one of the following: a fourth state where the third switch is on and the fourth switch is off, a fifth state where the third switch is off and the fourth switch is on, and a sixth state where the third switch is off and the fourth switch is off; wherein, the second voltage in the fourth state is 0, the second voltage in the fifth state is the voltage across the second energy storage element, and the second voltage in the sixth state is a floating voltage.

[0110] In this embodiment, the power supply can output multi-level pulses through combinations of different states. This structure maintains good dynamic response and stability even under high-frequency operating conditions, making it suitable for multi-level pulse applications requiring high waveform accuracy and response speed, such as semiconductor manufacturing.

[0111] Furthermore, the second switching circuit 204 also includes a second resistor, the two ends of which are respectively connected to the connection lines of the second energy storage element and the second half-bridge circuit. This second resistor can continuously charge the second energy storage element or stabilize its voltage. In an exemplary embodiment, such as... Figure 9 The diagram shown is a structural diagram of the second switching circuit. The second energy storage element is a capacitor V1, the second resistor is a second resistor, the third switch is a switching transistor SW3, and the fourth switch is a switching transistor SW4. The specific connection method can be achieved in the manner defined above, and will not be elaborated here.

[0112] In one exemplary embodiment, such as Figure 10As shown, the multi-level pulse power supply also includes a filter module 300, which is electrically connected to the switch module 200. The filter module 300 is used to filter the target voltage to obtain a filtered voltage. For example, based on the above-described multi-level pulse power supply, the filter module 300 can filter a first voltage and a second voltage.

[0113] Furthermore, the filter module 300 includes an impedance network 302 and an inductor. One end of the impedance network 302 is electrically connected to the output terminal of the first switching circuit 202 in the switching module 200, and the other end of the impedance network 302 serves as the positive terminal of the multi-level pulse power supply. One end of the inductor is electrically connected to the output terminal of the second switching circuit 204 in the switching module 200, and the other end of the inductor serves as the negative terminal of the multi-level pulse power supply.

[0114] Among them, such as Figure 11 As shown, the impedance network 302 includes a resistor R, an inductor L, a diode, and a contactor KM. One end of the resistor R is connected to one end of the inductor, the other end of the inductor L is connected to the cathode of the diode, the anode of the diode is connected to one end of the contactor, and the other end of the contactor KM is connected to the other end of the resistor. The intermediate node formed by the connection of the resistor R and the contactor KM is connected to the connection line between the first switch and the second switch in the switch module 200. The intermediate node formed by the connection of the resistor and the inductor is connected to the positive terminal of the power supply.

[0115] The filtering states of the impedance network 302 include resistive output filtering and inductive output filtering. If the load impedance connected between the positive and negative terminals of the power supply is greater than a first preset value, the filtering state of the impedance network 302 switches to resistive output filtering; if the load impedance is less than a second preset value, the filtering state of the impedance network switches to inductive output filtering; the first preset value is greater than the second preset value. The first and second preset values ​​can be determined according to the actual needs of different application scenarios, for example, they can be determined according to the actual needs of a semiconductor etching positive electrode scenario.

[0116] Understandably, the impedance network 302 can switch the filtering mode according to the load impedance, effectively suppressing the oscillation problem caused by filtering and avoiding the voltage drop and power loss of large current across the resistor.

[0117] In one exemplary embodiment, such as Figure 12As shown, the multi-level pulse power supply includes a high-frequency isolation conversion module 100, a switching module 200, and a filtering module 300. The high-frequency isolation conversion module 100 includes a first conversion circuit 102 and a second conversion circuit 104. The first conversion circuit 102 consists of a first inverter circuit, a first transformer, and a first rectifier circuit connected in sequence. The second conversion circuit 104 consists of a second inverter circuit, a second transformer, and a second rectifier circuit connected in sequence. The first inverter bridge in the first inverter circuit includes four MOSFETs: a first transistor Q1, a second transistor Q2, a third transistor Q3, and a fourth transistor Q4. The first inverter bridge in the second inverter circuit also includes four MOSFETs: a first transistor Q1, a second transistor Q2, a third transistor Q3, and a fourth transistor Q4.

[0118] The switching module 200 includes a first switching circuit 202 and a second switching circuit 204. The loop terminals of the first switching circuit 202 and the second switching circuit 204 are connected. The first switching circuit 202 includes a first energy storage element, a first switch, and a second switch. One end of the first switch is connected to one end of the second switch, and the other end of the first switch is connected to one end of the first energy storage element. The other end of the second switch is connected to the other end of the first energy storage element. The first energy storage element in the first switching circuit 202 is a capacitor V2, a first resistor, a first switch is a switching transistor SW1, and the second switch is a switching transistor SW2.

[0119] The second switching circuit 204 includes a second energy storage element, a third switch, and a fourth switch. One end of the third switch is connected to one end of the fourth switch, and the other end of the third switch is connected to one end of the second energy storage element. The other end of the fourth switch is connected to the other end of the second energy storage element. The second energy storage element in the second switching circuit 204 is a capacitor V1, a second resistor, a switching transistor SW3, and a switching transistor SW4.

[0120] The filtering module includes an impedance network 302 and an inductor. One end of the impedance network 302 is electrically connected to the output terminal of the first switching circuit 202 in the switching module, and the other end of the impedance network 302 serves as the positive terminal of the multi-level pulse power supply. One end of the inductor is electrically connected to the output terminal of the second switching circuit 204 in the switching module, and the other end of the inductor serves as the negative terminal of the multi-level pulse power supply. The impedance network 302 includes a resistor R, an inductor L, a diode, and a contactor KM.

[0121] It is understandable that the connection method of the multi-level pulse power supply in this example can be implemented in the manner defined above, and will not be elaborated here.

[0122] For example, based on the aforementioned multi-level pulse power supply, when a DC bus voltage is connected, the two inverter bridges in the power supply first invert the respective connected DC bus voltages into high-frequency voltages. After being isolated and boosted by a transformer, these voltages are rectified by a rectifier bridge to obtain two voltage sources, V1 and V2, thus obtaining the first pre-processed voltage and the second pre-processed voltage. Then, the two switching circuits in the power supply modulate the voltage amplitude of their respective pre-processed voltages. Specifically, through the combination of switches SW1-SW4, five states can be output: high impedance, V1+V2, V1, V2, and short circuit. Correspondingly, the pulse output by the power supply can switch at high frequency between four levels: 0, V1, V2, and V1+V2, to achieve multi-level pulse output. Figure 13 The diagram shown illustrates the switch states of SW1-SW4 and their corresponding voltage output states. Figure 13 It can be seen that when SW1, SW2, SW3, and SW4 are disconnected, the system is in a high-impedance state; when SW1 is on, SW2 and SW3 are off, and SW4 is on, the output is V1+V2; when SW1 is on, SW2 and SW3 are off, and SW4 is on, the output is V1+V2; when SW1 is off, SW2 and SW3 are on, and SW4 is off, the output is 0; when SW1 is on, SW2 and SW3 are on, and SW4 is off, the output is V2; when SW1 is off, SW2 and SW3 are on, and SW4 is on, the output is V1.

[0123] It should be noted that the circuits corresponding to the first and second preprocessing voltages output in the above multi-level pulse power supply can be controlled independently. Figure 12 The multi-level pulse power supply shown is only a schematic diagram. The high-frequency isolation converter module 100 may contain, but is not limited to, 3, 4, or 5 converter circuits. The number of switch circuits in the switch module 200 is the same as the number of converter circuits, and may also be, but is not limited to, 3, 4, or 5. The connection method is the same as described above and will not be repeated here. Both the high-frequency isolation converter module and the switch module can also adopt other circuit structures.

[0124] Furthermore, the output of the multi-level pulse power supply can reach the output port through a variable output impedance network. The output port (i.e., the positive and negative terminals of the power supply) of the multi-level pulse power supply can be connected to the chamber, and the chamber can be connected to the power output via a coaxial cable. The chamber can be, but is not limited to, a reaction chamber, such as a vacuum chamber used for plasma generation, photolithography, sputtering deposition, and chemical vapor deposition (CVD).

[0125] Understandably, a low-pass filter is usually installed in front of the chamber to prevent leakage of high-frequency radio frequency power. For example... Figure 14The diagram shows the equivalent circuit of the filter and the cavity during operation. When the cavity is unloaded and capacitive or has a large equivalent resistance, if the output impedance network of the aforementioned multi-level pulse power supply is not added, the low-impedance output of the power supply will generate a large voltage oscillation in the cavity and converge slowly. Figure 15 The diagram shown is a schematic of the chamber voltage in an impedance-free network, based on... Figure 16 As shown, taking the purple voltage signal as an example, the waveform oscillation frequency is relatively high, the amplitude is large at the beginning and gradually weakens, indicating an oscillation problem caused by chamber filtering.

[0126] This power supply incorporates an output impedance network that can switch between resistor-based and resistor-inductor output filtering. When the chamber impedance is high, it switches to resistor-based output filtering. This effectively suppresses oscillation problems caused by chamber filtering. Figure 15 The diagram shows a schematic of the chamber voltage with an impedance network. When the chamber impedance is low, the chamber impedance network switches to inductive output mode. In this mode, the voltage drop and power loss across the resistor due to high current are avoided, allowing for high current output conditions.

[0127] The aforementioned multi-level pulse power supply uses capacitors for energy storage. The switching module switches its state to the state required by the externally input control signal in response to the control signal. In this state, the voltage amplitude of the multiple pre-processed voltages stored in the capacitor is modulated to output different voltages. Furthermore, based on the multi-level output characteristics, different level outputs are configured during etching operation and interval to achieve electrode protection and charged particle removal.

[0128] It should be noted that the multi-level pulse power supply in any of the above embodiments can be used in semiconductor processes, such as semiconductor etching.

[0129] It is understood that the above-mentioned multi-level pulse power supply can also take other forms, and is not limited to the forms mentioned in the above embodiments, as long as it can achieve the function of outputting multi-level pulses.

[0130] In one exemplary embodiment, a semiconductor process apparatus is provided, including a multi-level pulse power supply as described in any one of the above embodiments and a semiconductor process apparatus body. The semiconductor process apparatus body can refer to the main structural and functional units of a piece of equipment used in semiconductor production, such as a lithography machine body or an etching machine body. The multi-level pulse power supply can provide multi-level pulses to the semiconductor process apparatus body to achieve semiconductor production.

[0131] In the description of this specification, references to terms such as "some embodiments," "other embodiments," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0132] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0133] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these modifications and improvements all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A multi-level pulse power supply, characterized in that, include: A high-frequency isolation converter module and a switching module, wherein the high-frequency isolation converter module and the switching module are electrically connected; The high-frequency isolation conversion module is used to receive the DC bus voltage and perform voltage conversion processing on the DC bus voltage to generate multiple pre-processed voltages. The switching module is used to respond to externally input control signals, switch the state of the switching module, and perform voltage amplitude modulation based on multiple pre-processed voltages to output the target voltage.

2. The multi-level pulse power supply according to claim 1, characterized in that, The high-frequency isolation conversion module includes multiple conversion circuits, wherein each conversion circuit is connected to the switching module and is used to receive the DC bus voltage, perform voltage conversion processing on the DC bus voltage, generate a corresponding pre-processed voltage, and transmit the pre-processed voltage to the switching module.

3. The multi-level pulse power supply according to claim 2, characterized in that, The high-frequency isolation conversion module includes: a first conversion circuit and a second conversion circuit; The first conversion circuit is connected to the switching module and is used to receive the DC bus voltage, perform voltage conversion processing on the DC bus voltage to generate a first pre-processed voltage, and transmit the first pre-processed voltage to the switching module. The second conversion circuit is connected to the switching module and is used to receive the DC bus voltage, perform voltage conversion processing on the DC bus voltage to generate a second pre-processed voltage, and transmit the second pre-processed voltage to the switching module.

4. The multi-level pulse power supply according to claim 3, characterized in that, The first conversion circuit consists of a first inverter circuit, a first transformer, and a first rectifier circuit connected in sequence. The first inverter circuit is used to connect to the DC bus voltage and invert the DC bus voltage into a high-frequency voltage. The first transformer is used to isolate and boost the high-frequency voltage to obtain a first voltage after isolation and boosting. The first rectifier circuit is used to rectify the first voltage and output a first pre-processed voltage to the switching module. The second conversion circuit consists of a second inverter circuit, a second transformer, and a second rectifier circuit connected in sequence. The second inverter circuit is used to connect to the DC bus voltage and invert the DC bus voltage into a second high-frequency voltage. The second transformer is used to isolate and boost the second high-frequency voltage to obtain the isolated and boosted second voltage. The second rectifier circuit is used to rectify the second voltage and output a second pre-processed voltage to the switching module.

5. The multi-level pulse power supply according to claim 2, characterized in that, The switching module includes at least a plurality of switching circuits, the input terminal of each switching circuit is connected to its corresponding conversion circuit, and the switching circuits are connected in sequence. Each of the switching circuits is used to switch the circuit state in response to an externally input control signal, so as to perform voltage amplitude modulation on the corresponding preprocessed voltage and output the target voltage.

6. The multi-level pulse power supply according to claim 5, characterized in that, The switching module includes: a first switching circuit and a second switching circuit; the first switching circuit and the second switching circuit are connected. The input terminal of the first switching circuit is connected to the first conversion circuit in the high-frequency isolation conversion module. The output terminal of the first switching circuit serves as the positive terminal of the multi-level pulse power supply, and is used to respond to the external input control signal to switch the state of the first switching circuit so as to modulate the voltage amplitude of the first preprocessed voltage of the first conversion circuit and output the first voltage. The input terminal of the second switching circuit is connected to the second conversion circuit in the high-frequency isolation conversion module. The output terminal of the second switching circuit serves as the negative terminal of the multi-level pulse power supply. It is used to respond to the externally input control signal, switch the state of the second switching circuit, and perform voltage amplitude modulation on the second pre-processed voltage of the second conversion circuit to output the second voltage.

7. The multi-level pulse power supply according to claim 6, characterized in that, The first switching circuit includes a first energy storage element and a first half-bridge circuit; The two ends of the first energy storage element are respectively connected to the first conversion circuit and the first half-bridge circuit, for storing energy based on the first preprocessing voltage; The output terminal of the first half-bridge circuit serves as the positive terminal of the multi-level pulse power supply. It is used to respond to externally input control signals, switch the state of the first half-bridge circuit, and modulate the voltage amplitude across the first energy storage element to output the first voltage.

8. The multi-level pulse power supply according to claim 7, characterized in that, The first half-bridge circuit includes a first switch and a second switch. One end of the first switch is connected to one end of the second switch, and the other end of the first switch is connected to one end of the first energy storage element. The other end of the second switch is connected to the other end of the first energy storage element.

9. The multi-level pulse power supply according to claim 8, characterized in that, The state of the first half-bridge circuit includes at least one of the following: a first state where the first switch is on and the second switch is off, a second state where the first switch is off and the second switch is on, and a third state where the first switch is off and the second switch is off. In the first state, the first voltage is the voltage across the first energy storage element; in the second state, the first voltage is 0; and in the third state, the first voltage is a floating voltage.

10. The multi-level pulse power supply according to claim 6, characterized in that, The second switching circuit includes a second energy storage element and a second half-bridge circuit; The two ends of the second energy storage element are respectively connected to the second conversion circuit and the second half-bridge circuit, for storing energy based on the second pre-processing voltage; The output terminal of the second half-bridge circuit serves as the negative terminal of the multi-level pulse power supply. It is used to respond to externally input control signals, switch the state of the second half-bridge circuit, and modulate the voltage amplitude across the second energy storage element to output a second voltage.

11. The multi-level pulse power supply according to claim 10, characterized in that, The second half-bridge circuit includes a third switch and a fourth switch. One end of the third switch is connected to one end of the fourth switch, and the other end of the third switch is connected to one end of the second energy storage element. The other end of the fourth switch is connected to the other end of the second energy storage element.

12. The multi-level pulse power supply according to claim 11, characterized in that, The state of the second half-bridge circuit includes at least one of the following: a fourth state where the third switch is on and the fourth switch is off; a fifth state where the third switch is off and the fourth switch is on; and a sixth state where the third switch is off and the fourth switch is off. In the fourth state, the second voltage is 0; in the fifth state, the second voltage is the voltage across the second energy storage element; and in the sixth state, the second voltage is a floating voltage.

13. The multi-level pulse power supply according to any one of claims 1 to 12, characterized in that, The multi-level pulse power supply also includes a filtering module, which is electrically connected to the switching module. The filtering module is used to filter the target voltage to obtain a filtered voltage.

14. The multi-level pulse power supply according to claim 13, characterized in that, The filtering module includes an impedance network and an inductor. One end of the impedance network is electrically connected to the output terminal of the first switching circuit in the switching module, and the other end of the impedance network serves as the positive power supply of the multi-level pulse power supply. One end of the inductor is electrically connected to the output terminal of the second switching circuit in the switching module, and the other end of the inductor serves as the negative terminal of the multi-level pulse power supply.

15. The multi-level pulse power supply according to claim 14, characterized in that, The filtering states of the impedance network include resistance output filtering and inductance output filtering. If the load impedance connected between the positive terminal and the negative terminal of the power supply is greater than a first preset value, the filtering state of the impedance network is switched to resistance output filtering. When the load impedance is less than the second preset value, the filtering state of the impedance network switches to inductor output filtering; when the first preset value is greater than the second preset value.

16. A semiconductor process apparatus, characterized in that, Includes a multilevel pulse power supply and a semiconductor process equipment body according to any one of claims 1 to 15.

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