High-uniformity on-chip heating device

Abstract

The invention relates to a high-uniformity on-chip heating device, belongs to the technical field of heating devices, and solves the problem that in the prior art, the temperature distribution uniformity of a heating sheet is generally poor. The device comprises a radiation chip and a supporting structure, the radiation chip sequentially comprises a silicon substrate, a heating sheet and an insulating layer from top to bottom; an ultra-black material is plated on the outer surface of the silicon substrate; the heating sheet is made of a metal heating resistor; heating ends are designed on the two sides of the metal heating resistor and used for being connected with electrodes; the part between the two heating ends of the metal heating resistor is structurally designed into a snakelike coiled shape; the radiation chip is installed on the supporting structure to form the high-uniformity on-chip heating device. The high-uniformity on-chip heating device is high in reliability, small in size and light in weight.

Description

Technical Field

[0001] The present invention relates to the technical field of heating devices, and particularly to a high-uniformity on-chip heating device. Background Art

[0002] In recent years, instrument devices have been developing towards the trends of miniaturization, low cost, low power consumption, and high stability. In order to meet the experimental test requirements of instrument devices, some heating devices also need to develop towards miniaturization and low power consumption. For example: (1) By spraying high-emissivity materials on the chip, an on-chip blackbody is made, which has very important applications in the calibration of infrared payloads such as seeker heads, the development of optical test instruments, and infrared stealth measurement. The higher the temperature uniformity on the chip after heating, the closer its radiation characteristics are to an ideal blackbody, and the higher the accuracy of the infrared calibration process. (2) By spraying materials with different emissivities on the chip, the emissivities of different materials at the same temperature are tested, which is of great significance in the field of material identification. The higher the temperature uniformity on the chip after heating, the more accurate the experimental data of the comparison of different materials. (3) The on-chip heating device is used as a heating stage to heat some ultra-fine components. To meet the requirement of uniform heating of ultra-fine components, the heating device itself needs to have a relatively high temperature uniformity.

[0003] Currently, there is relatively little research on on-chip heating circuits. When the area of the heating chip is small, the temperature distribution uniformity is generally poor. In addition, if the circuit resistance is too large, it will cause a significant reduction in the heating efficiency of the heating chip, require too high a voltage to reach the target temperature, and the use environment is extremely harsh.

[0004] Therefore, it is of great significance to study a new design method for high-uniformity on-chip heating circuits to improve the temperature distribution uniformity and working power of the heating chip. Summary of the Invention

[0005] In view of the above analysis, the embodiments of the present invention aim to provide a high-uniformity on-chip heating device to solve the problem that the temperature distribution uniformity is generally poor when the area of the existing on-chip heating circuit is small.

[0006] The embodiments of the present invention provide a high-uniformity on-chip heating device, which includes: a radiation chip and a support structure; the radiation chip sequentially includes a silicon substrate, a heating chip, and an insulating layer from top to bottom; the outer surface of the silicon substrate is coated with a super-black material; the heating chip is made of a metal heating resistor; heating ends are designed on both sides of the metal heating resistor for connecting electrodes; the part between the two heating ends of the metal heating resistor is designed in a serpentine winding shape in structure; the radiation chip is installed on the support structure to form a high-uniformity on-chip heating device.

[0007] Furthermore, the support structure consists of a tray support and a chassis, with the tray support placed on the chassis; there are columns at the four corners of the tray support, and slots are provided on the columns. The radiation chip is fixed on the tray support through the slots, and the slots are potted with heat-resistant inorganic glue.

[0008] Furthermore, the tray support is designed as a square, and a cylinder is provided in the center directly below the tray support. The lower end of the cylinder is inserted into the cylindrical groove of the chassis and potted with high-temperature resistant inorganic glue.

[0009] Furthermore, the heating end of the metal heating resistor is designed as a square; for the part other than the heating end, the metal heating resistor consists of a first edge region, a second edge region, an S-shaped center region, a third edge region, and a fourth edge region connected in sequence; the widths of the first to fourth edge regions are all the first width, the width of the S-shaped center region is the second width, and the first width is less than the second width; the distance between the resistors in the S-shaped center region is less than the first width; for the part of the metal heating resistor other than the heating end, the corners are set as arc-shaped.

[0010] Furthermore, the electrode includes an electrode seat and electrode pins; the electrode seat is set as a square ring; electrode pins and threaded holes are provided at the bottom of the electrode seat.

[0011] Furthermore, electrode pin holes and threaded through holes are provided at the left and right ends of the chassis corresponding to the heating end of the heating resistor for installing the electrode seat; the electrode pins pass through the electrode pin holes and extend out, and screws pass through the threaded through holes and enter the threaded holes at the bottom of the electrode seat to fix the electrode seat on the chassis.

[0012] Furthermore, gold wires are welded to the two heating ends of the metal heating resistor respectively, and the gold wires at both ends are welded to the upper surface of the gold-plated electrode seat, and the gold-plated electrode pins can be powered by a power supply.

[0013] Furthermore, the column is a solid structure, with through holes on the column, and screws pass through the through holes to fix the column on the tray support.

[0014] Furthermore, the column is made of fully stabilized zirconia ceramic material; the tray support is made of zirconia material with a gold-plated surface.

[0015] Furthermore, the size of the radiation chip is from 10mm×10mm to 30mm×30mm.

[0016] Compared with the prior art, the present invention can achieve at least one of the following beneficial effects:

[0017] 1. The heating sheet provided by the present invention is designed in a serpentine coiled shape, with the width of the edge designed to be relatively narrow, increasing the resistance of the edge circuit, raising the relative temperature of the edge of the heating sheet, and having a smaller temperature difference between the edge and the center of the heating sheet after reaching thermal equilibrium through heat dissipation. The heat dissipation at the center of the heating sheet is poor, and the heat conduction rate is slow. To improve the uniformity of the heating sheet after the temperature stabilizes, the present invention designs to increase the width of the central area of the heating sheet, reduce the resistance value of the center, lower the relative temperature of the center, and achieve thermal equilibrium through heat exchange, greatly improving the temperature uniformity of the heating sheet. The temperature distribution uniformity of the heating sheet is achieved to reach 0.1 °C at room temperature; good uniformity is also achieved under medium and high temperature conditions. For example, at 54.06 °C, the uniformity is 0.695 °C; at a high temperature of 117.88 °C, it reaches 2.78 °C.

[0018] 2. For the on-chip heating circuit provided by the present invention, the width of each circuit line is appropriately adjusted, and the resistance value and power can be adjusted according to requirements during the design of the heating sheet. The resistance value of the heating sheet of the present invention can reach 13.384 Ω under the condition of a terminal voltage of 40V.

[0019] 3. Under the condition of an input voltage of 40V, the present invention can achieve a maximum working temperature of 500 °C for the heating sheet.

[0020] 4. In the support structure of this application, by setting the chassis and the tray bracket, the radiation chip can be stably installed. In the electrode, by setting the electrode seat and the electrode pins, welding with the electrode seat through gold wires, and adding an external power supply through the electrode pins, the metal heating resistor can be reliably heated, improving the reliability of the device. At the same time, the chassis is installed in an anti-vibration manner to reduce the influence of external vibration on the radiation chip, further improving the reliability of the device. Therefore, this device can be applied to special environments such as aerospace.

[0021] In the present invention, the above technical solutions can also be combined with each other to achieve more preferred combination schemes. Other features and advantages of the present invention will be described in the subsequent specification, and some advantages can be made obvious from the specification or understood by implementing the present invention. The objectives and other advantages of the present invention can be realized and obtained from the content specifically pointed out in the specification and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The drawings are only for the purpose of showing specific embodiments and are not considered as limiting the present invention. Throughout the drawings, the same reference signs represent the same components.

[0023] Figure 1 It is a schematic diagram of the overall structure of a high-uniformity on-chip heating device;

[0024] Figure 2 It is a two-dimensional diagram of the heating sheet of a high-uniformity on-chip heating device;

[0025] Figure 3 Schematic diagram of the radiation chip structure of a high-uniformity on-chip heating device;

[0026] Figure 4 Schematic diagram of the installation of the radiation chip of a high-uniformity on-chip heating device onto a tray bracket;

[0027] Figure 5 Schematic diagram of the gold-plated electrode structure of a high-uniformity on-chip heating device;

[0028] Figure 6 Schematic diagram of the chassis structure of a high-uniformity on-chip heating device.

[0029] Reference numerals:

[0030] 1 - Radiation chip;

[0031] 2 - Tray;

[0032] 3 - Strut;

[0033] 4 - Heating end;

[0034] 5 - Ultra-black material;

[0035] 6 - Silicon substrate;

[0036] 7 - Heating sheet;

[0037] 8 - Silicon dioxide insulating layer;

[0038] 9 - Electrode;

[0039] 10 - Gold wire;

[0040] 11 - Cylinder;

[0041] 12 - Chassis;

[0042] 13 - Threaded hole;

[0043] 14 - Electrode pin;

[0044] 15 - Ring-shaped gold-plated electrode seat;

[0045] 17 - Electrode pin hole;

[0046] 18 - Threaded through-hole of the chassis;

[0047] 19 - Mounting seat for the support positioning member;

[0048] 20 - Cylindrical groove;

[0049] 21 - Positioning round hole. Detailed implementation method

[0050] The preferred embodiments of the present invention will be specifically described below in conjunction with the accompanying drawings. The accompanying drawings form a part of this application and are used together with the embodiments of the present invention to explain the principles of the present invention, rather than to limit the scope of the present invention.

[0051] A specific embodiment of the present invention discloses a high-uniformity on-chip heating device, as Figure 1 and Figure 3 shown. The device includes: a radiation chip 1 and a support structure; the radiation chip 1 includes a silicon substrate 6, a heating sheet 7, and an insulating layer 8 from top to bottom in sequence; a super-black material 5 is plated on the outer surface of the silicon substrate 6; the heating sheet 7 is made of a metal heating resistor; heating ends 4 are designed on both sides of the metal heating resistor for connecting electrodes 9; the part between the two heating ends 4 of the metal heating resistor is designed in a serpentine winding shape in structure; the radiation chip 1 is installed on the support structure to form a high-uniformity on-chip heating device.

[0052] The two-dimensional diagram of the heating sheet 7 is as Figure 2 shown.

[0053] Specifically, the super-black material 5 has an extremely high emissivity, and the emissivity exceeds 0.99 in the wavelength range of 2μm - 14μm; the super-black material 5 also has advantages such as sprayable molding and a wide temperature resistance range (able to withstand high temperatures exceeding 500°C), and can be heated and used under atmospheric conditions. The structural schematic diagram of the radiation chip 1 is as Figure 3 shown.

[0054] The support structure consists of a tray 2 bracket and a chassis 12, and the tray 2 bracket is placed on the chassis 12; four corners of the tray 2 bracket are provided with pillars 3, and slots are provided on the pillars 3, and the radiation chip 1 is fixed on the tray 2 bracket through the slots; the slots are potted with heat-resistant inorganic glue.

[0055] The tray 2 bracket is designed to be square, and a cylinder 11 is provided in the center of the lower part of the tray 2 bracket. The lower end of the cylinder 11 is inserted into the cylindrical groove 20 of the chassis 12 and potted with high-temperature resistant inorganic glue.

[0056] Specifically, the structure of the cylindrical groove 20 is adapted to the cylinder 11 for accommodating the cylinder 11; all the joint parts of the grooves are potted with high-temperature resistant inorganic glue.

[0057] The heating ends 4 of the metal heating resistor are designed to be square; except for the heating ends 4, the metal heating resistor is composed of a first edge region, a second edge region, an S-shaped center region, a third edge region, and a fourth edge region connected in sequence; the widths of the first to fourth edge regions are all the first width, the width of the S-shaped center region is the second width, and the first width is less than the second width; the distance between the resistors in the S-shaped center region is less than the first width; except for the heating ends 4, the corners of the metal heating resistor are set to be arc-shaped.

[0058] The metal heating resistance material can be selected from platinum, nickel, copper, and iron.

[0059] Specifically, the metal heating resistance realizes the temperature rise of the entire radiation chip 1 through an externally connected input voltage. The selection of the heating resistance needs to meet the conditions of small temperature coefficient, wide operating temperature range, high precision, etc. The heating resistance is preferably a metal resistance. Among the metal resistances, platinum resistance, nickel resistance, copper resistance, and iron resistance are preferred. Platinum resistance is the optimal choice.

[0060] A groove matching the shape of the metal heating resistance is etched on the silicon substrate 6, and a heating sheet 7 is fabricated in the groove; then an insulating layer is fabricated on the heating sheet 7 by physical vapor deposition to form a radiation chip.

[0061] The electrode 9 includes an electrode base 15 and an electrode pin 14; the electrode base 15 is arranged in a square ring shape; electrode pins 14 and threaded holes 13 are provided at the bottom of the electrode base 15.

[0062] Specifically, the electrode base 15 is made of copper and its surface is gold-plated. The gold-plated electrode base 15 is arranged in a square ring shape for weight reduction, and the middle part of the electrode base 15 is hollow. The specific structural schematic diagram is as Figure 5 shown.

[0063] The structural schematic diagram of the chassis 12 is as Figure 6 shown.

[0064] Electrode pin holes 17 and threaded through holes 18 corresponding to the heating ends 4 of the heating resistance are provided at both the left and right ends of the chassis 12 for installing the electrode base 15; the electrode pins 14 pass through the electrode pin holes 17 and extend out, and screws pass through the threaded through holes 18 and enter the threaded holes 13 at the bottom of the electrode base 15 to fix the electrode base 15 on the chassis 12.

[0065] Symmetric support and positioning part mounting seats 19 are also arranged at both the upper and lower ends of the chassis 12 for installing support and positioning parts having the same shape as the gold-plated electrode base 15. The support and positioning parts include a positioning seat and positioning feet. The positioning feet of the support and positioning parts and the electrode pins 14 of the electrode 9 are jointly inserted into the holes of the external structural member, thereby playing a role in fixed connection. Among them, the shape of the positioning seat is the same as that of the electrode base, and the length of the positioning feet is the same as that of the electrode pins to ensure that the device can be stably installed on the external structural member.

[0066] A plurality of positioning round holes 21 are provided at the outer edge of the chassis 12 for installing the entire heating device on the threaded holes 13 of the external structural member. The chassis 12 is fixedly connected to the external structural member through screws with spring washers and flat washers. Thread sealant is applied to the screws during installation to strengthen the fixation of the heating device and reduce the relative shaking between the heating device and the external structural member.

[0067] Both heating ends 4 of the metal heating resistor are respectively welded with gold wires 10, and the gold wires 10 at both ends are respectively welded to the upper surface of the gold-plated electrode seat 15. The gold-plated electrode pins 14 can be powered by a power supply.

[0068] Specifically, due to the property of the gold wire 10 being prone to breakage, multiple gold wires 10 need to be welded to the upper surface of the gold-plated electrode seat 15.

[0069] Specifically, the gold-plated electrode 9 is installed on the chassis 12 by passing the bottom electrode pins 14 of the gold-plated electrode through the electrode pin holes 17; the gold-plated electrode 9 is fixed to the chassis 12 by screws passing through the threaded through holes 18 on the back of the chassis 12. The electrode pins 14 at both ends on the back of the chassis 12 can be used for power supply. The gold wires 10 at both ends of the heating sheet 7 are respectively welded to the gold-plated electrodes 9 on both sides of the chassis 12 by spot welding, and then the heating sheet 7 is powered.

[0070] For the entire heating device, the radiation chip 1 and the electrode 9 seat cannot be affected by additional external current except for normal power supply. However, in the use environment, part of the ambient current will come into contact with the entire heating device. Therefore, it is necessary to make the external ambient current exist only on the support structure of this device as much as possible, and not affect the radiation chip 1 as much as possible. The surface of the tray 2 bracket is gold-plated and the upper surface structure of the chassis 12 is gold-plated for rapid conduction of electricity to lead out the current.

[0071] The support column 3 is of solid structure and has through holes for fixing to the tray 2 bracket by screws.

[0072] The support column 3 is made of fully zirconia ceramic material; the tray 2 bracket is made of zirconia material with a gold-plated surface.

[0073] Specifically, using ceramics as the material of the support column 3 and the tray 2 bracket can effectively avoid heat dissipation on the radiation surface and improve the heat uniformity of the radiation surface. The specific installation schematic diagram of the radiation chip 1 installed on the tray 2 bracket is as Figure 4 shown.

[0074] The insulating layer 8 is made of SiO2.

[0075] Specifically, the present invention realizes high surface temperature uniformity of the radiation chip 1, adjustable resistance of the metal heating resistor, and adjustable heating power through the following methods.

[0076] The size of the radiation chip 1 is 10 mm × 10 mm to 30 mm × 30 mm.

[0077] When the area of the heating sheet 7 is small, the temperature distribution uniformity is generally poor. To ensure high temperature uniformity of the heating sheet 7, the following conditions are designed to be met:

[0078] In the present invention, heating ends 4 are designed on both sides of the chip, which can make the surface temperature of the heated radiation chip 1 more uniform. On the premise of meeting the power supply, each heating end 4 is designed to occupy the smallest chip area, so as not to affect the layout of the part between the two heating ends 4 of the internal metal heating resistor and ensure temperature uniformity. When arranging the metal heating resistor, it is found that the local resistance at the right-angle end is relatively large, and the phenomenon of local overheating will occur, seriously affecting the surface temperature uniformity of the heating sheet 7. Therefore, in the embodiment of the present invention, the right-angle part of the circuit is designed as an arc shape, reducing the resistance at the right-angle end of the circuit and improving the situation of local overheating on the chip, greatly improving the heating uniformity. The heating sheet 7 is designed in a serpentine coiled shape to improve the temperature uniformity of the radiation chip 1.

[0079] Preferably, in the present invention, the circuit width at the edge of the heating sheet 7 is designed to be relatively narrow, increasing the edge circuit resistance, raising the relative temperature at the edge of the heating sheet 7, and having a smaller temperature difference with the center of the heating sheet 7 after reaching thermal equilibrium through heat dissipation, thus improving the temperature uniformity of the heating sheet 7.

[0080] Specifically, to meet the requirements of light weight and miniaturization of the heating device, the radiation chip 1 cannot be equipped with heat insulation materials. Therefore, the edge of the radiation chip 1 is greatly affected by air flow and dissipates heat relatively quickly, and the thermal uniformity of the radiation chip 1 is relatively poor after the temperature stabilizes. To solve this problem, the width of the metal heating resistor at the edge of the heating sheet 7 is designed to be relatively narrow. In the design of the present invention, the width of the metal heating resistor in the central area of the heating sheet 7 is increased, reducing the resistance value of the center, lowering the relative temperature of the center, and achieving thermal equilibrium through heat exchange, which can improve the temperature uniformity of the heating sheet 7. The heat dissipation at the center of the heating sheet 7 is poor and the heat conduction rate is slow. To improve the uniformity of the heating sheet 7 after the temperature stabilizes, the width of the metal heating resistor in the central area of the heating sheet 7 is increased.

[0081] In a specific embodiment of the present invention, as Figure 2 shown, the lengths of each section on the heating sheet are a = 12.47 mm, b = 3.5 mm, c = 4.5 mm, d = 12.45 mm, e = 3.5 mm, f = 4.5 mm, g = 1 mm. According to the resistance calculation formula, where ρ is the resistivity, l is the resistance length, and s is the resistance cross-sectional area; the edge resistance is the resistance of the outermost circle except for the heating end; the central area resistance is the resistance of the S-shaped central area.

[0082] The calculated edge resistance is:

[0083] ρ×12.45÷(3.5h)×2 + ρ×12.47÷(3.5h)×2 ≈ 14.24ρ÷h;

[0084] The central area resistance:

[0085] ρ×12.45÷(4.5h)×3 + ρ×1÷(4.5h)×2 ≈ 8.74ρ÷h;

[0086] where h is the thickness of the heating sheet;

[0087] Edge resistance ÷ Central region resistance ≈ 1.63;

[0088] Since the current in the central region and the edge region of the heating sheet is the same, the power P of the edge resistance is P = 1.63P', where P is the sum of the powers of the first to fourth edge regions, and P' is the power of the S-shaped central region. Therefore, the heat ratio Q = 1.63Q', where Q' is the heat of the S-shaped central region, and Q is the sum of the heats of the first to fourth edge regions.

[0089] Furthermore, to improve the working efficiency of the heating sheet 7, on the premise of a specified size of the radiation chip 1, the chip resistance should be reduced as much as possible. By appropriately adjusting the width of each circuit line, the overall resistance value of the heating sheet 7 can be adjusted according to requirements, and then on the premise of constant voltage, according to the power is adjusted.

[0090] In a specific embodiment of the present invention, for a 25mm×25mm radiation chip 1, the area of the heating sheet 7 accounts for 75% of the entire area of the radiation chip. Under the condition of a terminal voltage of 40V, the circuit resistance can reach 13.384Ω, and the highest heating temperature reaches 500℃. After uniformity testing, when the average temperature is 24.89℃, the uniformity is 0.1℃; when the average temperature is 54.06℃, the uniformity is 0.695℃; when the average temperature is 117.88℃, the uniformity is 2.78℃.

[0091] Compared with the prior art, in this embodiment, the part between the two heating ends 4 of the metal heating resistor is designed in a serpentine coiled shape in structure, and the width of the edge is designed to be relatively narrow, increasing the edge circuit resistance and raising the relative temperature of the edge of the heating sheet 7. After reaching thermal equilibrium through heat dissipation, the temperature difference from the center of the heating sheet 7 is small. The heat dissipation at the center of the heating sheet 7 is poor, and the heat conduction rate is slow. To improve the uniformity of the heating sheet 7 after the temperature stabilizes, the present invention designs to increase the width of the central region of the heating sheet 7, reduce the central resistance value, lower the relative temperature of the center, and achieve thermal equilibrium through heat exchange, which can improve the temperature uniformity of the heating sheet 7. The temperature distribution uniformity of the heating sheet 7 is achieved to reach 0.1℃ at room temperature; good uniformity is also achieved under medium and high temperature conditions. For example, when the temperature is 54.06℃, the uniformity is 0.695℃; at a high temperature of 117.88℃, it reaches 2.78℃. For the heating sheet 7 provided in this embodiment, by appropriately adjusting the width of each circuit line, the resistance value and power of the heating sheet 7 can be adjusted according to requirements. The resistance value of the heating sheet 7 of the present invention can reach 13.384Ω under the condition of a terminal voltage of 40V. In this embodiment, under the condition of an input voltage of 40V, the working temperature of the heating sheet 7 can reach a maximum of 500℃.

[0092] Those skilled in the art can understand that all or part of the processes of implementing the methods in the above embodiments can be completed by instructing relevant hardware through a computer program, and the program can be stored in a computer-readable storage medium. Among them, the computer-readable storage medium is a disk, an optical disc, a read-only memory, a random access memory, etc.

[0093] As mentioned above, the above are only the preferred specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention should be covered by the protection scope of the present invention.

Claims

1. A on-chip heating device with high uniformity, characterized in that The device includes: A radiation chip and a support structure; the radiation chip includes a silicon substrate, a heating sheet, and an insulating layer from top to bottom in sequence; a super-black material is plated on the outer surface of the silicon substrate; the heating sheet is made of a metal heating resistor; heating ends are designed on both sides of the metal heating resistor for connecting electrodes; the part between the two heating ends of the metal heating resistor is designed in a serpentine winding shape in structure; the radiation chip is installed on the support structure to form a high-uniformity on-chip heating device.

2. The heating device according to claim 1, characterized in that The support structure consists of a tray bracket and a chassis; the tray bracket is placed on the chassis; columns are provided at the four corners of the tray bracket, and slots are provided on the columns, and the radiation chip is fixed on the tray bracket through the slots; the slots are potted with heat-resistant inorganic glue.

3. The heating device according to claim 2, characterized in that, The tray bracket is designed to be square, and a cylinder is provided in the middle of the lower part of the tray bracket, and the lower end of the cylinder is inserted into the cylindrical groove of the chassis and potted with high-temperature resistant inorganic glue.

4. The heating device according to claim 1, characterized in that, The heating ends of the metal heating resistor are designed to be square; except for the heating ends, the metal heating resistor consists of a first edge area, a second edge area, an S-shaped central area, a third edge area, and a fourth edge area connected in sequence; the widths of the first to fourth edge areas are all a first width, the width of the S-shaped central area is a second width, and the first width is less than the second width; the resistance distance between the S-shaped central areas is less than the first width; except for the heating ends, the corners of the metal heating resistor are set to be arc-shaped.

5. The heating device according to claim 4, characterized in that, The electrode includes an electrode base and electrode pins; the electrode base is set in a square ring shape; electrode pins and threaded holes are provided at the bottom of the electrode base.

6. The heating device according to claim 5, wherein Electrode pin holes and threaded through holes corresponding to the heating ends of the heating resistor are provided at the left and right ends of the chassis for installing the electrode base; the electrode pins pass through the electrode pin holes and extend out, and screws pass through the threaded through holes and enter the threaded holes at the bottom of the electrode base to fix the electrode base on the chassis.

7. The heating device according to claim 6, characterized in that, Gold wires are respectively welded to the two heating ends of the metal heating resistor, and the gold wires at both ends are respectively welded to the upper surface of the electrode base, and the electrode pins can be powered by a power supply.

8. The heating device according to claim 2, characterized in that The column is a solid structure, and through holes are provided on the column, and screws pass through the through holes to fix the column on the tray bracket.

9. The heating device according to claim 8, characterized in that, The column is made of all-zirconia ceramic material; the tray bracket is made of zirconia material with a gold-plated surface.

10. The heating device according to claim 1, characterized in that, The size of the radiation chip is from 10mm×10mm to 30mm×30mm.

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