Composite material, light-emitting device, preparation method of light-emitting device and display device

Abstract

The invention discloses a composite material, a light-emitting device, a preparation method of the light-emitting device and a display device. The composite material comprises a P-type semiconductor material and a doping material, and the band gap of the doping material is 1.5-2.5 eV. The composite material disclosed by the invention is relatively long in service life.

Description

Technical Field

[0001] The present application relates to the technical field of light-emitting devices, and particularly to a composite material, a light-emitting device, a preparation method thereof, and a display device. Background Art

[0002] A P-type semiconductor material is a type of semiconductor material that can achieve the controllable migration of carriers in an orderly manner under the action of an electric field when carriers (holes) are injected, thereby transporting charges. Currently, P-type organic semiconductor materials are widely used in hole functional layers.

[0003] However, the existing P-type semiconductor materials have a short lifespan and need to be further improved. Summary of the Invention

[0004] In view of this, the present application provides a composite material, a light-emitting device, a preparation method thereof, and a display device.

[0005] In a first aspect, an embodiment of the present application provides a composite material, including a P-type semiconductor material and a doping material, wherein the band gap of the doping material is 1.5 - 2.5 eV.

[0006] In a second aspect, an embodiment of the present application further provides a light-emitting device, including a cathode, a light-emitting layer, a hole functional layer, and an anode stacked in sequence, wherein,

[0007] the hole functional layer includes a composite material, the composite material includes a P-type semiconductor material and a doping material, wherein the band gap of the doping material is 1.5 - 2.5 eV; and / or

[0008] the light-emitting device further includes an interface layer located between the light-emitting layer and the hole functional layer, the interface layer includes an interface material, and the band gap of the interface material is 1.5 - 2.5 eV.

[0009] In a third aspect, an embodiment of the present application further provides a preparation method of a light-emitting device, including the following steps:

[0010] Provide a first light-emitting device preform, the first light-emitting device preform including a stacked cathode and light-emitting layer;

[0011] Deposit a P-type semiconductor material on the light-emitting layer to obtain a hole functional layer; and

[0012] Prepare an anode on the hole functional layer to obtain a light-emitting device;

[0013] Among them, depositing a P-type semiconductor material on the light-emitting layer includes: depositing a composite material of a P-type semiconductor material and a doping material on the light-emitting layer; and / or, before depositing the P-type semiconductor material on the light-emitting layer, it further includes: depositing an interface material on the light-emitting layer to obtain an interface layer;

[0014] Or,

[0015] Providing a second light-emitting device preform, the second light-emitting device preform includes an anode;

[0016] Depositing a P-type semiconductor material on the anode to obtain a hole functional layer; and

[0017] Successively preparing a stacked light-emitting layer and a cathode on the hole functional layer to obtain a light-emitting device;

[0018] Among them, depositing a P-type semiconductor material on the anode includes: depositing a composite material including a P-type semiconductor material and a doping material on the anode; and / or, before successively preparing a stacked light-emitting layer and a cathode on the hole functional layer, it further includes: depositing an interface material on the hole functional layer to obtain an interface layer.

[0019] In a fourth aspect, an embodiment of the present application further provides a display device, including the light-emitting device described above.

[0020] The composite material described in the present application includes the P-type semiconductor material and the doping material and has a longer lifespan. Description of the Drawings

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0022] Figure 1 is a schematic structural diagram of a light-emitting device provided by an embodiment of the present application;

[0023] Figure 2 is a schematic structural diagram of another light-emitting device provided by an embodiment of the present application;

[0024] Figure 3 is a schematic structural diagram of yet another light-emitting device provided by an embodiment of the present application;

[0025] Figure 4 is a schematic structural diagram of yet another light-emitting device provided by an embodiment of the present application;

[0026] Figure 5It is a flowchart of a method for manufacturing a light-emitting device provided by an embodiment of the present application;

[0027] Figure 6 It is a flowchart of another method for manufacturing a light-emitting device provided by an embodiment of the present application;

[0028] Figure 7 It is a current density-voltage curve graph of the light-emitting devices of Embodiments 1-3 and Comparative Example 1 of the present application;

[0029] Figure 8 It is a current efficiency-luminance curve graph of the light-emitting devices of Embodiments 1-3 and Comparative Example 1 of the present application.

[0030] Reference numerals:

[0031] Light-emitting device 100; cathode 10; light-emitting layer 20; hole functional layer 30; hole transport layer 31; hole injection layer 32; anode 40; interface layer 50; electron transport layer 60. Detailed implementation manners

[0032] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this invention belongs. The terms used in the specification of this invention herein are only for the purpose of describing specific embodiments, and are not intended to limit the invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0034] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels, and do not impose numerical requirements or establish an order.

[0035] In this application, "and / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Wherein A and B can be singular or plural.

[0036] In this application, "at least one" means one or more, and "a plurality" means two or more. "One or more", "at least one of the following (items)" or similar expressions refer to any combination of these items, including any combination of single item (s) or plural item (s). For example, "at least one of a, b, or c", or "at least one of a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0037] In this application, when forming another layer "on" a certain layer, the so-called "on" is a broad concept, which can mean that the formed another layer is adjacent to a certain layer, or there are other spacer structure layers between the another layer and a certain layer. For example, when forming a second electrode "on" the first carrier functional layer, the so-called "on" can mean that the formed second electrode is adjacent to the first carrier functional layer, or there are other spacer structure layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0038] The various embodiments of this application can exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of this application; therefore, it should be considered that the description of the range has specifically disclosed all possible sub-ranges and single values within the range. For example, it should be considered that the description of the range from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0039] The technical solution of this application is as follows:

[0040] In a first aspect, an embodiment of this application provides a composite material, including a P-type semiconductor material and a doping material, wherein the bandgap of the doping material is 1.5 - 2.5 eV.

[0041] It can be understood that the doping material described in this application has a relatively narrow bandgap and is a narrow-bandgap material.

[0042] In some embodiments, the composite material is composed of the P-type semiconductor material and the doping material.

[0043] The composite material of the present application includes the P-type semiconductor material and the doping material. When the composite material is used in an electronic device, the doping material can form electron traps to store electrons entering the composite material due to its relatively narrow bandgap, and can reduce the electron concentration in contact with the P-type semiconductor material, thereby reducing the probability of exciton recombination in the P-type semiconductor material, reducing the aging of the P-type semiconductor material, and enhancing the lifespan of the P-type semiconductor material.

[0044] In some embodiments, in the composite material, the mass ratio of the P-type semiconductor material to the doping material is 1:(0.05 - 1), for example, 1:0.05, 1:0.08, 1:0.1, 1:0.2, 1:0.3, 1:0.4, 1:0.5, 1:0.6, 1:0.7, 1:0.8, 1:0.9, 1:1, etc. Within the range of the mass ratio, the composite material can have a longer lifespan and a higher hole mobility.

[0045] In some embodiments, the doping material includes, but is not limited to, one or more of silicon, silicon carbide, silicon germanium carbide, silicon germanium alloy, amorphous silicon, indium antimonide alloy, indium phosphide alloy, black phosphorus, ferrite perovskite (FeTiO3), cuprite, barium vanadate, copper selenide, cadmium telluride, germanium selenide, gallium arsenide.

[0046] In some embodiments, the doping material includes a first doping element. Further, the first doping element includes, but is not limited to, one or more of B, Al, Ga, In, Zn, Cd, Hg, Cu, Ag, C. The first doping element can regulate the energy level of the doping material, thereby improving the output ability of holes on the interface material, and further improving the ability of holes to be injected into the light-emitting layer. Thus, on the one hand, the electron-hole recombination rate can be increased, thereby enhancing the light-emitting intensity and light-emitting efficiency of the device; on the other hand, the holes entering the light-emitting layer can consume excessive electrons and reduce the accumulation of electrons in the light-emitting layer. When the voltage continuously increases and carriers are continuously injected during the use of the light-emitting device, the accumulation of electrons is often more rapid and shows an exponential increase. The holes entering the light-emitting layer can effectively consume the excess electrons and avoid the accumulation of electrons in the light-emitting layer 20, the interface layer 50, and the hole functional layer 30, thereby enhancing the stability and lifespan of the light-emitting device 100.

[0047] In some embodiments, in the doping material, the doping concentration of the first doping element is 10 16 ~10 20 atoms / cm 3 ,for example, 10 16 atoms / cm 3 、10 17atoms / cm 3 、10 18 atoms / cm 3 、10 19 atoms / cm 3 、10 20 atoms / cm 3 etc. Within the above range, the output ability of holes on the doping material can be effectively improved, and further the ability of holes to be injected into the light-emitting layer can be effectively improved.

[0048] It can be understood that the doping material is a quantum dot material or a non-quantum dot material. In at least some embodiments, the doping material is selected from silicon quantum dots or doped silicon quantum dots. The doping element in the doped silicon quantum dots is the first doping element.

[0049] In some embodiments, the average particle size of the quantum dots is 3 - 20 nm.

[0050] The P-type semiconductor material may be a material known in the art for use in the hole transport layer. For example, it may be selected from, but not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro-NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO, one or more of them.

[0051] The material of the hole injection layer may also be a material known in the art for hole injection layers, and may be selected from, but not limited to, 2,3,6,7,10,11 - hexacyano - 1,4,5,8,9,12 - hexaazatriphenylene (HAT - CN), PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s - MoO3 (PEDOT:PSS:s - MoO3), 4,4',4' - tris(N - (3 - methylphenyl) - N - phenylamino)triphenylamine (m - MTDATA), tetracyanoquinodimethane (F4 - TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide, or one or more of them.

[0052] In a second aspect, please refer to Figure 1 , an embodiment of the present application provides a light - emitting device 100, including a cathode 10, a light - emitting layer 20, a hole - functional layer 30, and an anode 40 stacked in sequence.

[0053] The hole - functional layer 30 includes a P - type semiconductor material.

[0054] The hole - functional layer 30 further includes a second narrow - bandgap material, that is, the hole - functional layer 30 includes the composite material described above; and / or, please further refer to Figure 2 , the light - emitting device 100 further includes an interface layer 50 located between the light - emitting layer 20 and the hole - functional layer 30. The interface layer 50 includes an interface material, and the bandgap of the interface material is 1.5 - 2.5 eV.

[0055] It can be understood that the interface material described in the present application has a relatively narrow bandgap.

[0056] The P - type semiconductor material, the doping material, and the composite material are as described above, and will not be elaborated here.

[0057] As an example, please refer to Figure 1 , in some embodiments, the hole - functional layer 30 further includes a doping material. In other words, the hole - functional layer 30 includes a P - type semiconductor material and a doping material, that is, the composite material described above, and the light - emitting device 100 does not include the interface layer 50.

[0058] As an example, please refer to Figure 2 , in some other embodiments, the light - emitting device 100 further includes an interface layer 50 located between the light - emitting layer 20 and the hole - functional layer 30. The interface layer 50 includes an interface material, and the hole - functional layer 30 does not include a doping material.

[0059] As an example, please refer to Figure 2, in some other embodiments, the hole functional layer 30 includes a P-type semiconductor material and a doping material, and the light-emitting device 100 further includes an interface layer 50 located at the interface between the light-emitting layer 20 and the hole functional layer 30.

[0060] The bandgap of the interface material is 1.5 - 2.5 eV, for example, 1.5 eV, 1.6 eV, 1.7 eV, 1.8 eV, 1.9 eV, 2.0 eV, 2.1 eV, 2.2 eV, 2.3 eV, 2.4 eV, 2.5 eV, etc.

[0061] When the interface layer 50 is provided in the light-emitting device 100 of the present application, when there is an excess of electrons in the light-emitting device 100, the interface material in the interface layer 50 can form electron traps to store the excess electrons that cross the light-emitting layer and reach the hole side due to its relatively narrow bandgap, thereby reducing or even avoiding the problem of damage to the material of the hole functional layer 30 caused by electron leakage to the hole functional layer 30; in addition, the electron traps can also reduce the accumulation of excess electrons on the light-emitting material in the light-emitting layer 20 and avoid the damage to the light-emitting material by the excess electrons, thereby improving the stability and lifespan of the light-emitting device 100.

[0062] In addition, since the interface layer 50 is located at the interface between the hole functional layer 30 and the light-emitting layer 20, the electrons stored and accumulated in the interface layer 50 can form an electric field, which can thus attract holes to be injected quickly, thereby improving the hole injection efficiency and the brightness of the device.

[0063] Furthermore, since the recombination of carriers on the interface material of the interface layer 50 is relatively difficult, most carriers will transfer to the light-emitting layer 20 for recombination; while a small amount of carriers that recombine in the interface layer 50 will release energy in the form of heat, and this heat will cause thermal excitation of the carriers, making the carriers further transfer to the light-emitting layer 20. Thus, the provision of the interface layer 50 can not only reduce the accumulation of electrons at the interface between the hole functional layer 30 and the light-emitting layer 20 and improve the lifespan of the light-emitting device 100, but also improve the light-emitting intensity and light-emitting efficiency of the device.

[0064] When the doping material is doped in the hole functional layer 30 of the light-emitting device 100 of the present application, the doping material can form electron traps to store the electrons entering the hole functional layer 30 due to its relatively narrow bandgap. On the one hand, it can reduce the electron concentration in contact with the P-type semiconductor material, thereby reducing the probability of exciton recombination in the hole material, reducing the aging of the hole material, and further improving the lifespan of the device; on the other hand, the storage of electrons by the doping material can also reduce the carrier concentration at the interface between the hole functional layer and the light-emitting layer, making the heat more dispersed and easier to dissipate, further reducing the aging of the device, and thus improving the lifespan of the device.

[0065] The conduction band energy level of the interface material is lower than that of the material of the light-emitting layer 20.

[0066] In some embodiments, the conduction band energy level of the interface material is 0.1 - 0.8 eV lower than that of the material of the light-emitting layer 20. For example, 0.1 eV, 0.2 eV, 0.3 eV, 0.4 eV, 0.5 eV, 0.6 eV, 0.7 eV, 0.8 eV, etc. Within this range, excess electrons can be stored more effectively, hole injection can be enhanced more effectively, and the accumulation of electrons at the interface between the hole functional layer 30 and the light-emitting layer 20 can be reduced more effectively, thereby effectively improving the performance of the device such as luminous intensity, luminous efficiency, and lifespan.

[0067] The conduction band energy level of the doping material is lower than that of the material of the light-emitting layer 20.

[0068] In some embodiments, the conduction band energy level of the doping material is 0.1 - 0.8 eV lower than that of the material of the light-emitting layer 20. For example, 0.1 eV, 0.2 eV, 0.3 eV, 0.4 eV, 0.5 eV, 0.6 eV, 0.7 eV, 0.8 eV, etc. Within this range, excess electrons can be stored more effectively, hole injection can be enhanced more effectively, and the accumulation of electrons at the interface between the hole functional layer 30 and the light-emitting layer 20 can be reduced more effectively, thereby effectively improving the performance of the device such as luminous intensity, luminous efficiency, and lifespan.

[0069] In some embodiments, the interface material includes, but is not limited to, one or more of silicon, silicon carbide, silicon germanium carbide, silicon germanium alloy, amorphous silicon, indium antimonide alloy, indium phosphide alloy, black phosphorus, ferrite perovskite (FeTiO3), cuprian adamite, barium vanadate, copper selenide, cadmium telluride, germanium selenide, gallium arsenide.

[0070] In some embodiments, the interface material includes a second doping element. Further, the second doping element includes, but is not limited to, one or more of B, Al, Ga, In, Zn, Cd, Hg, Cu, Ag, C. The second doping element can regulate the energy level of the interface material, thereby improving the output ability of holes on the interface material, and further improving the ability of holes to be injected into the light-emitting layer. In this way, on the one hand, the electron-hole recombination rate can be increased, thereby improving the luminous intensity and luminous efficiency of the device; on the other hand, the holes entering the light-emitting layer can consume excessive electrons and reduce the accumulation of electrons in the light-emitting layer. When the voltage continuously increases and carriers are continuously injected during the use of the light-emitting device, the accumulation of electrons is often more rapid and shows an exponential increase. The holes entering the light-emitting layer can effectively consume the excess electrons and avoid the accumulation of electrons in the light-emitting layer 20, the interface layer 50, and the hole functional layer 30, thereby improving the stability and lifespan of the light-emitting device 100.

[0071] It can be understood that the interface material is a quantum dot material or a non - quantum dot material. The average particle size of the quantum dot material is 3 - 20 nm.

[0072] In at least some embodiments, the interface material is selected from silicon quantum dots or doped silicon quantum dots. The doping element in the doped silicon quantum dots is the second doping element.

[0073] In some embodiments, in the interface material, the doping concentration of the second doping element is 10 16 ~10 20 atoms / cm 3 , for example, 10 16 atoms / cm 3 , 10 17 atoms / cm 3 , 10 18 atoms / cm 3 , 10 19 atoms / cm 3 , 10 20 atoms / cm 3 etc. Within this range, the output ability of holes on the interface material can be effectively improved, and thus the ability of holes to be injected into the light - emitting layer can be effectively improved.

[0074] It can be understood that the interface material and the doping material can be the same or different.

[0075] The thickness of the interface layer 50 is related to the band gap of the interface material. In some embodiments, the thickness of the interface layer 50 satisfies the following formula:

[0076]

[0077] where P is the tunneling probability, and 10 -15 ≤P≤10 -8 , m dn is the effective mass of the electron state density, E g is the band gap, Δx is the film layer thickness, is the reduced Planck constant.

[0078] In some embodiments, the thickness of the interface layer 50 is less than or equal to 5 nm, and can be, for example, 1 nm, 1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, etc.

[0079] It can be understood that the hole functional layer 30 described in the present application can be a hole - transporting layer 31, or a hole - injecting layer 32, or a stacked hole - transporting layer 31 and hole - injecting layer 32.

[0080] Please refer to Figures 3 - 4 , in some embodiments, the light-emitting device 100 further includes an electron transport layer 60, and the electron transport layer 60 is located between the cathode 10 and the light-emitting layer 20.

[0081] The cathode 10 and the anode 40 are anodes and cathodes known in the art for light-emitting devices. For example, they can independently include, but are not limited to, doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The materials of the doped metal oxide electrodes can include, but are not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by laminating two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. Here, " / " represents a laminated structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer, and an AZO layer laminated in sequence. The materials of the elemental metal electrodes can include, but are not limited to, one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrodes include, but are not limited to, Au:Mg alloy electrodes and Ag:Mg alloy electrodes.

[0082] In some embodiments, the anode is an electrode with a relatively high work function. For example, it can include, but is not limited to, doped metal oxide electrodes with a relatively high work function, elemental metal electrodes with a relatively high work function, and carbon nanotube electrodes. The elemental metal electrodes with a relatively high work function can be selected from, but are not limited to, Ni, Pt, Au, Ag, Ir, etc.

[0083] In some embodiments, the cathode is an electrode with a relatively low work function, and can include, for example, but not limited to, a single metal electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The single metal electrode with a relatively low work function can be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function can be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrodes with a relatively low work function are Au:Mg and Ag:Mg, etc.

[0084] The material of the light-emitting layer 20 can include, for example, but not limited to, one or more of organic light-emitting materials and quantum dot light-emitting materials.

[0085] The organic light-emitting materials can include, for example, but not limited to, CBP:Ir(mppy)3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy) (4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium]), diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF (thermally activated delayed fluorescence) materials, polymers containing B-N covalent bonds, HLCT (hybrid local charge transfer excited state) materials, Exciplex (excited complex) light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, etc.

[0086] The quantum dot light-emitting materials can include, for example, but not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0087] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots may respectively include, but are not limited to, one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds may include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds may include, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0088] As an example, the quantum dots of the core-shell structure may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0089] The perovskite semiconductor material may include, but is not limited to, doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is a Cs + ion, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of the like, and X is a halogen anion, including Cl - , Br - , I - and one or more of the like. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of the like, and X is a halogen anion, including Cl - , Br - , I - and one or more of the like.

[0090] When the hole functional layer 30 is a hole transport layer, the P-type semiconductor material can be a material known in the art for use in hole transport layers. For example, it can be selected from, but not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro-NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO, one or more of them.

[0091] When the hole functional layer 30 is a hole injection layer, the material of the hole injection layer may also be a material known in the art for hole injection layers, and may be selected from, for example, but not limited to, 2,3,6,7,10,11 - hexacyano - 1,4,5,8,9,12 - hexaazatriphenylene (HAT - CN), PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s - MoO3 (PEDOT:PSS:s - MoO3), 4,4',4' - tris(N - 3 - methylphenyl - N - phenylamino)triphenylamine (m - MTDATA), tetracyanoquinodimethane (F4 - TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide, or one or more of them.

[0092] The material of the electron transport layer 60 is a material known in the art for electron transport layers, and may be selected from, for example, but not limited to, one or more of inorganic electron transport materials and organic electron transport materials. The inorganic electron transport materials include, but are not limited to, one or more of metal oxides, doped metal oxides, IIB - VIA group semiconductor materials, IIIA - VA group semiconductor materials, and IB - IIIA - VIA group semiconductor materials. Specifically, the metal oxides are selected from, for example, but not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5; the metal oxides in the doped metal oxides are selected from, for example, but not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, and the dopants in the doped metal oxides are selected from, for example, but not limited to, one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn. By way of example, the doped metal oxides may be aluminum - doped zinc oxide (AZO), lithium - doped zinc oxide (LZO), magnesium - doped zinc oxide (MZO), tin - doped zinc oxide, etc.; the IIB - VIA group semiconductor materials are selected from, for example, but not limited to, one or more of ZnS, ZnSe, CdS; the IIIA - VA group semiconductor materials are selected from, for example, but not limited to, one or more of InP, GaP; the IB - IIIA - VIA group semiconductor materials are selected from, for example, but not limited to, one or more of CuInS, CuGaS. The organic electron transport materials include, but are not limited to, one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene - containing compounds, and hydroxyquinoline compounds.

[0093] It can be understood that the light - emitting device 100 may also be provided with some functional layers that are commonly used in light - emitting devices and are helpful for improving the performance of the light - emitting device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0094] It can be understood that the materials of the respective layers of the light-emitting device 100 can be adjusted according to the light-emitting requirements of the light-emitting device 100.

[0095] In some embodiments, the light-emitting device 100 further includes a substrate, which is disposed on a side of the cathode 10 away from the light-emitting layer 20, or the substrate is disposed on a side of the anode 40 away from the light-emitting layer 20.

[0096] The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate can include, but is not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0097] It can be understood that the light-emitting device 100 can be a normal light-emitting device or an inverted light-emitting device. The light-emitting device 100 can be a quantum dot light-emitting device (QLED) or an organic light-emitting device (OLED).

[0098] In a third aspect, please refer to Figure 1 and Figure 5 , the embodiments of the present application further provide a method for manufacturing a light-emitting device, including the following steps:

[0099] Step S11: Provide a first light-emitting device preform, where the first light-emitting device preform includes a stacked cathode 10 and a light-emitting layer 20;

[0100] Step S12: Deposit a P-type semiconductor material on the light-emitting layer 20 to obtain a hole functional layer 30;

[0101] Step S13: Fabricate an anode 40 on the hole functional layer 30 to obtain the light-emitting device 100.

[0102] In the manufacturing method, step S12 includes: depositing a composite material including a P-type semiconductor material and a doping material on the light-emitting layer 20 to obtain a hole functional layer 30; and / or, please refer to Figure 2 , between step S11 and step S12, it further includes: depositing an interface material on the light-emitting layer 20 to obtain an interface layer 50.

[0103] It can be understood that when an interface material is further deposited on the light-emitting layer 20 between step S11 and step S12, the P-type semiconductor material in step S12 is deposited on the interface layer 50.

[0104] Please further refer to Figures 3 - 4 , in some embodiments, the first light-emitting device preform further includes an electron transport layer 60 located between the cathode 10 and the light-emitting layer 20.

[0105] In some embodiments, step S13 is as follows: sequentially prepare a stacked hole functional layer 30 and an anode 40 on the interface layer 50 to obtain a light-emitting device 100.

[0106] Please refer to Figure 1 and Figure 6 , the embodiments of the present application further provide another method for preparing a light-emitting device, including the following steps:

[0107] Step S21: Provide a second light-emitting device preform, and the second light-emitting device preform includes an anode 40;

[0108] Step S22: Deposit a P-type semiconductor material on the anode 40 to obtain a hole functional layer 30;

[0109] Step S23: Sequentially prepare a stacked light-emitting layer 20 and a cathode 10 on the hole functional layer 30 to obtain a light-emitting device 100.

[0110] In the preparation method, step S22 includes: depositing a composite material including a P-type semiconductor material and a doping material on the anode 40 to obtain a hole functional layer 30; and / or, please further refer to Figure 2 , between step S22 and step S23, it further includes: depositing an interface material on the hole functional layer 30 to obtain an interface layer 50.

[0111] It can be understood that when depositing the interface material on the hole functional layer 30 is further included between step S22 and step S23, step S23 is: sequentially prepare a stacked light-emitting layer 20 and a cathode 10 on the interface layer 50.

[0112] Please refer to Figures 3 - 4 , in some embodiments, step S23 includes: sequentially prepare a stacked light-emitting layer 20, an electron transport layer 60 and an anode 40 on the hole functional layer 30.

[0113] In some embodiments, the second light-emitting device preform includes a stacked anode 40 and a hole functional layer 30.

[0114] In the above two preparation methods:

[0115] The methods for forming the cathode 10, the light-emitting layer 20, the interface layer 50, the hole functional layer 30, the anode 40, and the electron transport layer 60 can be implemented by conventional techniques in the art, such as chemical methods or physical methods. Among them, chemical methods include chemical vapor deposition, sequential ionic layer adsorption and reaction, anodic oxidation, electrolytic deposition, and coprecipitation. Physical methods include physical coating methods and solution methods. Among them, physical coating methods include: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can be spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating, etc.

[0116] In some embodiments, after depositing the interface material and before obtaining the interface layer 50, it further includes: performing a first doping treatment on the interface material to dope a second doping element into the interface material.

[0117] In some embodiments, the first doping treatment includes: performing a first ion implantation on the interface material.

[0118] It can be understood that the method of the first ion implantation described in this application can be plasma treatment, ion irradiation treatment, low-temperature ion implantation, ion beam implantation, etc.

[0119] In some embodiments, the ions used in the first ion implantation include but are not limited to one or more of B ions, Al ions, Ga ions, In ions, Zn ions, Cd ions, Hg ions, Cu ions, Ag ions, and C ions.

[0120] In some embodiments, the ion energy of the first ion implantation is 0.2 - 5 keV, for example, 0.2 keV, 1 keV, 2 keV, 3 keV, 4 keV, 5 keV, etc.

[0121] In some embodiments, the ion dose of the first ion implantation is 1×10 16 ~1×10 20 ions / cm 2 ,for example, 1×10 16 ions / cm 2 、1×10 17 ions / cm 2 、1×10 18 ions / cm 2 、1×10 19 ions / cm 2 、1×10 20 ions / cm 2 etc.

[0122] Within the range of the ion energy and dose of the first ion implantation, the first narrow bandgap can be effectively ion-doped.

[0123] The interface material and the doping material are as described above and will not be elaborated here.

[0124] In some embodiments, the method for depositing the interface material includes:

[0125] A. Provide the interface material, dissolve the interface material in a first solvent to obtain an interface material dispersion;

[0126] B. Set the interface material dispersion on the light-emitting layer 20 or the hole functional layer 30.

[0127] In some embodiments, the first solvent can be an organic solvent.

[0128] It can be understood that the concentration of the dispersion is not limited as long as the interface material can be fully and uniformly dispersed. In at least some embodiments, the concentration range of the interface material dispersion is 0.1 - 5 mg / mL.

[0129] In some embodiments, the method for depositing the P-type semiconductor material includes:

[0130] a. Mix the P-type semiconductor material and a second solvent to obtain a P-type semiconductor material dispersion;

[0131] b. Set the P-type semiconductor material dispersion on the anode 40 or the interface layer 50 to obtain the hole functional layer 30.

[0132] Further, in some embodiments, mixing the P-type semiconductor material and the second solvent includes: mixing the P-type semiconductor material, the doping material, and the second solvent.

[0133] The types and proportions of the doping material and the P-type semiconductor material are as described above and will not be elaborated here.

[0134] In some embodiments, the second solvent can be an organic solvent.

[0135] It can be understood that the concentration of the P-type semiconductor material dispersion is not limited as long as the solute can be fully and uniformly dispersed. In at least some embodiments, the concentration of the P-type semiconductor material dispersion is 5 - 30 mg / mL.

[0136] In some embodiments, when the P-type semiconductor material is an inorganic P-type semiconductor material, after depositing the composite material including the P-type semiconductor material and the doping material and before obtaining the hole functional layer 30, it further includes: performing a second doping treatment on the doping material to dope a first doping element into the doping material.

[0137] In some embodiments, the second doping treatment includes: performing a second ion implantation on the doping material.

[0138] It can be understood that the method of the second ion implantation described in the present application can be methods such as plasma treatment, ion irradiation treatment, low-temperature ion implantation, ion beam implantation, etc.

[0139] In some embodiments, the ions used in the second ion implantation include but are not limited to one or more of B ions, Al ions, Ga ions, In ions, Zn ions, Cd ions, Hg ions, Cu ions, Ag ions, C ions.

[0140] In some embodiments, the ion energy of the second ion implantation is 0.2 - 5 keV, for example, 0.2 keV, 1 keV, 2 keV, 3 keV, 4 keV, 5 keV, etc.

[0141] In some embodiments, the ion dose of the second ion implantation is 1×10 16 ~1×10 20 ions / cm 2 ,for example, 1×10 16 ions / cm 2 、1×10 17 ions / cm 2 、1×10 18 ions / cm 2 、1×10 19 ions / cm 2 、1×10 20 ions / cm 2 etc.

[0142] Within the range of the ion energy and dose of the second ion implantation, the second narrow bandgap can be effectively ion-doped.

[0143] It can be understood that the light-emitting device 100 can also be provided with some functional layers that are conventionally used in light-emitting devices and are helpful for improving the performance of the light-emitting device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0144] It can be understood that the materials of each layer of the light-emitting device 100 can be adjusted according to the light-emitting requirements of the light-emitting device 100.

[0145] Fourthly, the present application also relates to a display device, and the display device includes the light-emitting device 100.

[0146] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, an in-vehicle display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0147] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application. The raw materials used in the following embodiments are all commercially available products unless otherwise specified.

[0148] Material Example 1

[0149] Mix TFB, silicon quantum dots, and the solvent chlorobenzene to obtain a P-type semiconductor material dispersion with a concentration of 8 mg / mL. Among them, the mass ratio of TFB to silicon quantum dots is 1:0.5. Spin-coat the P-type semiconductor material dispersion on a film-forming substrate at a rotation speed of 3000 rpm for 30 s, and then heat it on a heating plate at 200 °C for 20 min to obtain a composite material.

[0150] Material Example 2

[0151] This example is basically the same as Material Example 1, except that in this example, PVK is used to replace TFB in Material Example 1.

[0152] Material Example 3

[0153] This example is basically the same as Material Example 1, except that in this example, the mass ratio of TFB to silicon quantum dots is 1:0.05.

[0154] Material Example 4

[0155] This example is basically the same as Material Example 1, except that in this example, the mass ratio of TFB to silicon quantum dots is 1:1.

[0156] Material Example 5

[0157] This example is basically the same as Example 1, except that in this example, silicon carbide quantum dots are used to replace the silicon quantum dots in Example 1.

[0158] Material Example 6

[0159] This embodiment is basically the same as Embodiment 1, except that in this embodiment, silicon-germanium alloy quantum dots are used to replace the silicon quantum dots in Embodiment 1.

[0160] Material Embodiment 7

[0161] This embodiment is basically the same as Material Embodiment 1, except that in this embodiment, NiO is used to replace TFB in Material Embodiment 1.

[0162] Material Embodiment 8

[0163] This embodiment is basically the same as Material Embodiment 5, except that the preparation method of the composite material in this embodiment includes:

[0164] Put the substrate into an inert atmosphere, mix NiO, silicon quantum dots and the solvent chlorobenzene to obtain a P-type semiconductor material dispersion with a concentration of 8 mg / mL. Among them, the mass ratio of NiO to silicon quantum dots is 1:0.5. Spin-coat the P-type semiconductor material dispersion on the film-forming substrate at a rotation speed of 3000 rpm for 30 s, and then perform boron ion implantation on the silicon quantum dots to dope boron ions into the silicon quantum dots. The energy of the boron ions is 3 keV, and the dose is 1×10 18 ions / cm 2 , and then heat on a hot plate at 200 °C for 20 min to obtain the composite material.

[0165] Material Comparative Example 1

[0166] The material of this comparative example is TFB in Material Embodiment 1.

[0167] Material Comparative Example 2

[0168] The material of this comparative example is PVK in Material Embodiment 2.

[0169] Material Comparative Example 3

[0170] The material of this comparative example is NiO in Material Embodiment 11.

[0171] Device Embodiment 1

[0172] Step S1: First, ultrasonically clean the substrate coated with the ITO anode with acetone and ethanol for 15 min, then wash it with deionized water and blow it dry. Then dry it on a hot plate at 150 °C for 10 min, and then perform ultraviolet light irradiation for 20 min to increase the ITO work function;

[0173] Step S2: Spin-coat the PEDOT:PSS material with a mass fraction of 2.8% on the cleaned ITO anode substrate at a rotation speed of 3000 rpm for 30 s, and then heat it on a hot plate at 150 °C for 20 min to obtain a hole injection layer with a thickness of 20 nm;

[0174] Step S3: Place the substrate spin-coated with the hole injection layer into an inert atmosphere, spin-coat the TFB material with a concentration of 8 mg / mL at a rotation speed of 3000 rpm for 30 s, and then heat it on a heating plate at 200 °C for 20 min to obtain a hole transport layer with a thickness of 22 nm;

[0175] Step S4: Spin-coat silicon quantum dots with a concentration of 4 mg / mL on the hole transport layer at a rotation speed of 4000 rpm for 30 s, and then heat it on a heating plate at 200 °C for 20 min to obtain an interface layer with a thickness of 7 nm;

[0176] Step S5: Spin-coat the CdZnSe / ZnSe / CdZnS / ZnS blue light quantum dot material with a concentration of 30 mg / mL on the interface layer at a rotation speed of 2000 rpm for 30 s, and then heat it on a heating plate at 80 °C for 5 min to obtain a light-emitting layer with a thickness of 40 nm;

[0177] Step S6: Spin-coat ZnO material with a concentration of 40 mg / mL on the light-emitting layer at a rotation speed of 4000 rpm for 30 s, and then remove the solvent under a low pressure of 0.01 Pa for 20 min to obtain an electron transport layer with a thickness of 40 nm;

[0178] Step S7: Evaporate an Ag-Fe alloy with a Fe content of 10% on the electron transport layer by thermal evaporation at an evaporation rate of 1 Å / s for 1000 s under a vacuum of not higher than 3×10 -4 Pa to obtain a cathode with a thickness of 100 nm, and encapsulate it to obtain a quantum dot light-emitting diode.

[0179] Device Example 2

[0180] This example is basically the same as Device Example 1, except that the preparation method of the interface layer in this example includes:

[0181] Spin-coat silicon quantum dots with a concentration of 4 mg / mL on the hole transport layer at a rotation speed of 4000 rpm for 30 s, and then perform boron ion implantation on the silicon quantum dots to dope boron ions into the silicon quantum dots. The energy of the boron ions is 3 keV and the dose is 1×10 18 ions / cm 2 , and then heat it on a heating plate at 200 °C for 20 min to obtain an interface layer with a thickness of 7 nm.

[0182] In the silicon quantum dots of this example, the doping concentration of boron is 1×10 16 atoms / cm 3 .

[0183] Device Example 3

[0184] This embodiment is basically the same as Device Embodiment 1, except that in this embodiment, silicon carbide quantum dots are used to replace the silicon quantum dots in Device Embodiment 1.

[0185] Device Embodiment 4

[0186] This embodiment is basically the same as Device Embodiment 1, except that in this embodiment, silicon-germanium alloy quantum dots are used to replace the silicon quantum dots in Device Embodiment 1.

[0187] Device Embodiment 5

[0188] This embodiment is basically the same as Device Embodiment 1, except that in this embodiment, amorphous silicon is used to replace the silicon quantum dots in Device Embodiment 1.

[0189] Device Embodiment 6

[0190] This embodiment is basically the same as Device Embodiment 1, except that in this embodiment, black phosphorus is used to replace the silicon quantum dots in Device Embodiment 1.

[0191] Device Embodiment 7

[0192] This embodiment is basically the same as Device Embodiment 1, except that in this embodiment, ferrite perovskite is used to replace the silicon quantum dots in Device Embodiment 1.

[0193] Device Embodiment 8

[0194] This embodiment is basically the same as Device Embodiment 1, except that in this embodiment, conichalcite is used to replace the silicon quantum dots in Device Embodiment 1.

[0195] Device Embodiment 9

[0196] This embodiment is basically the same as Device Embodiment 1, except that in this embodiment, barium vanadate is used to replace the silicon quantum dots in Device Embodiment 1.

[0197] Device Embodiment 10

[0198] This embodiment is basically the same as Device Embodiment 1, except that in this embodiment, cadmium telluride quantum dots are used to replace the silicon quantum dots in Device Embodiment 1.

[0199] Device Embodiment 11

[0200] This embodiment is basically the same as Device Embodiment 2, except that in this embodiment, the energy of the boron ions is 0.2 keV. In the silicon quantum dots of this embodiment, the doping concentration of boron is 1×10 18 atoms / cm 3 .

[0201] Device Embodiment 12

[0202] This embodiment is basically the same as Device Embodiment 2, except that in this embodiment, the energy of the boron ions is 5 keV. In the silicon quantum dots of this embodiment, the doping concentration of oxygen is 1×10 18 atoms / cm 3 .

[0203] Device Embodiment 13

[0204] This embodiment is basically the same as Device Embodiment 2, except that in this embodiment, the dose of the boron ions is 1×10 16 ions / cm 2 . In the silicon quantum dots of this embodiment, the doping concentration of oxygen is 1×10 16 atoms / cm 3 .

[0205] Device Embodiment 14

[0206] This embodiment is basically the same as Device Embodiment 2, except that in this embodiment, the dose of the boron ions is 1×10 20 ions / cm 2 . In the silicon quantum dots of this embodiment, the doping concentration of oxygen is 1×10 20 atoms / cm 3 .

[0207] Device Embodiment 15

[0208] This embodiment is basically the same as Device Embodiment 2, except that in this embodiment, Cu ions (Cu 2+ ) are used to replace the boron ions in Device Embodiment 2.

[0209] Device Embodiment 16

[0210] This embodiment is basically the same as Device Embodiment 2, except that in this embodiment, Ga ions (Ga 3+ ) are used to replace the oxygen ions in Device Embodiment 2.

[0211] Device Embodiment 17

[0212] This embodiment is basically the same as Device Embodiment 2, except that in this embodiment, C ions (C 4+ ) are used to replace the boron ions in Device Embodiment 2.

[0213] Device Embodiment 18

[0214] This embodiment is basically the same as Device Embodiment 2, except that in this embodiment, the material of the hole transport layer is the composite material in Material Embodiment 1. The preparation method of the hole transport layer in this embodiment includes:

[0215] Place the substrate with the spin-coated hole injection layer into an inert atmosphere. Mix TFB, silicon quantum dots, and the solvent chlorobenzene to obtain a dispersion of the p-type semiconductor material. The mass ratio of TFB to silicon quantum dots is 1:0.5. Spin-coat the p-type semiconductor material dispersion with a concentration of 8 mg / mL on the hole injection layer at a rotation speed of 3000 rpm for 30 s. Subsequently, heat it on a hot plate at 200 °C for 20 min to obtain a hole transport layer with a thickness of 22 nm.

[0216] Device Examples 19 - 25

[0217] Device Examples 19 - 25 are basically the same as Device Example 18, except that the materials of the hole transport layers in Device Examples 19 - 25 are the composite materials of Material Examples 2 - 8 respectively.

[0218] Device Example 26

[0219] This example is basically the same as Device Example 11, except that this example does not include the preparation of the interface layer, that is, the device in this example does not include the interface layer.

[0220] Device Example 27

[0221] This example is basically the same as Device Example 12, except that this example does not include the preparation of the interface layer, that is, the device in this example does not include the interface layer.

[0222] Device Comparative Example 1

[0223] This comparative example is basically the same as Device Example 1, except that the interface layer is not provided in the device of this comparative example, and the device structure of this comparative example is anode / PEDOT:PSS / TFB / light-emitting layer / ZnO / cathode.

[0224] Device Comparative Example 2

[0225] This comparative example is basically the same as Device Example 1, except that the interface layer is not provided in the device of this comparative example, and the material of the hole transport layer is PVK. The device structure of this comparative example is anode / PEDOT:PSS / PVK / light-emitting layer / ZnO / cathode.

[0226] Device Comparative Example 3

[0227] This comparative example is basically the same as Device Example 1, except that the interface layer is not provided in the device of this comparative example, and the material of the hole transport layer is NiO. The device structure of this comparative example is anode / PEDOT:PSS / NiO / light-emitting layer / ZnO / cathode.

[0228] Performance Detection

[0229] The devices of Device Examples 1 to 2, 18 and Device Comparative Example 1 were heated at 120 °C for 30 min for aging treatment, and then the light-emitting devices of Device Examples 1 to 2, 18 and Device Comparative Example 1 were subjected to electrical performance tests (JVL data tests) to obtain Figure 7 the J-V curves (current density J-voltage V curves) shown in Figure 8 and the C.E.-L curves (current efficiency η A -luminance L curves) shown in

[0230] The JVL test method is as follows: Measured by an efficiency test system built by controlling a QE PRO spectrometer, a Keithley 2400, and a Keithley 6485 through LabView, the driving voltage is 0 to 8 V, the step size is 0.1 V, and the current density-voltage curve graph and the current efficiency-luminance curve graph are plotted.

[0231] It can be seen from Figure 7 that at the same current density, the voltages of the light-emitting devices of Device Examples 1 to, 18 are higher than those of the light-emitting device of Device Comparative Example 1.

[0232] It can be seen from Figure 8 that at the same luminance, the current efficiencies of the light-emitting devices of Device Examples 2 and 18 are higher than those of the light-emitting device of Device Comparative Example 1; at the same luminance, at low luminance, the current efficiency of the light-emitting device of Device Example 1 is higher than that of the light-emitting device of Device Comparative Example 1.

[0233] The devices of Device Examples 1 to 38 and Device Comparative Examples 1 to 3 were heated at 120 °C for 30 min for aging treatment, and then the maximum luminance L max , lifetime T95, and lifetime T95@1000 nit were tested, and the test results are shown in Table 1.

[0234] The test methods for the lifetime T95 and the lifetime T95@1000 nit are as follows: The time required for the luminance of the device to decrease to a certain proportion of the highest luminance under a constant current drive of 2 mA. The time when the luminance drops to 95% of the highest luminance is defined as T95, and this lifetime is the measured lifetime. To shorten the test cycle, the device lifetime test is usually carried out by accelerating the device aging at high luminance and obtained by fitting with an extended exponential decay luminance decay fitting formula. For example, the lifetime at 1000 nit is denoted as T95@1000 nit. The specific calculation formula is as follows:

[0235]

[0236] where T95 L is the lifetime at low luminance, T95 H is the measured lifetime at high luminance, and LH To accelerate the device to the maximum brightness, L L is 1000 nit, A is the acceleration factor. In this experiment, the value of A is obtained as 1.7 by measuring the lifetimes of several groups of green QLED devices at the rated brightness.

[0237] The maximum brightness is measured using a luminance meter PR650, where the driving current is a constant current of 2 mA.

[0238] The environmental conditions for the above tests are: carried out at room temperature, and the air humidity is 30 - 60%.

[0239] Table 1:

[0240]

[0241]

[0242] As can be seen from Table 1:

[0243] Compared with the light-emitting devices of Device Comparative Example 1, the light-emitting devices of Device Examples 1 - 18, 20 - 23 have higher maximum brightness, higher luminous efficiency, and longer lifetimes; compared with the light-emitting devices of Device Comparative Example 2, the light-emitting device of Device Example 19 has higher maximum brightness, higher luminous efficiency, and longer lifetime. Compared with the light-emitting devices of Device Comparative Example 3, the light-emitting devices of Device Examples 24 - 27 have higher maximum brightness, higher luminous efficiency, and longer lifetimes. It can be seen that setting an interface layer between the light-emitting layer and the hole transport layer can effectively improve the maximum brightness, luminous efficiency, and lifetime of the device. The reason may be that the interface material in the interface layer can form electron traps to store excess electrons, which can reduce or even avoid the problem of the material of the hole transport layer being damaged caused by electron leakage to the hole transport layer. The electron traps can also reduce the accumulation of excess electrons on the luminescent material in the light-emitting layer, avoid the damage of the luminescent material by excess electrons, thereby improving the stability and lifetime of the light-emitting device. The electrons stored and accumulated in the interface layer can form an electric field, which can attract holes to be injected quickly, thereby improving the brightness of the device;

[0244] Compared with the light-emitting devices of Device Comparative Example 3, the light-emitting devices of Device Examples 26 - 27 have higher luminous efficiency and longer lifetimes. It can be seen that doping a doping material in the hole transport layer can effectively improve the lifetime of the light-emitting device. The reason may be that the doping material can form electron traps to store the electrons entering the hole transport layer, can reduce the electron concentration in contact with the P-type semiconductor material, thereby reducing the probability of exciton recombination in the hole material, and can also reduce the carrier concentration at the interface between the hole transport layer and the light-emitting layer, making the heat more dispersed and easier to dissipate, reducing the aging of the device, thereby improving the lifetime of the device;

[0245] Compared with the light-emitting device of Device Embodiment 1, the light-emitting device of Device Embodiment 2 has a higher maximum brightness, higher luminous efficiency, and longer lifespan. It can be seen that heavily doping the interfacial material of the interfacial layer can effectively improve the maximum brightness, luminous efficiency, and lifespan of the device. The reason may be that the P-type doping element can regulate the energy levels of the interfacial material, thereby improving the output ability of holes on the interfacial material, and further enhancing the ability of holes to be injected into the light-emitting layer. Moreover, the holes entering the light-emitting layer can consume excessive electrons, reducing the accumulation of electrons in the light-emitting layer. When the voltage continuously increases and carriers are continuously injected during the use of the light-emitting device, and the accumulation of electrons tends to be more rapid, showing an exponential increase, the holes entering the light-emitting layer can effectively consume the excess electrons, thus improving the stability and lifespan of the light-emitting device.

[0246] The technical solutions provided in the embodiments of the present application have been introduced in detail above. Specific examples have been used herein to elaborate on the principles and implementation manners of the present application. The descriptions of the above embodiments are only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A composite material, characterized in that, It includes a P-type semiconductor material and a doping material, wherein the band gap of the doping material is 1.5 to 2.5 eV.

2. The composite material according to claim 1, characterized in that, The composite material is composed of the P-type semiconductor material and the doping material.

3. The composite material according to claim 1 or 2, characterized in that the mass ratio of the P-type semiconductor material to the doping material is 1:(0.05 to 1); and / or the doping material is a quantum dot material or a non-quantum dot material. Optionally, the average particle size of the quantum dot material is 3 to 20 nm; and / or the doping material includes a first doping element, and the first doping element includes one or more of B, Al, Ga, In, Zn, Cd, Hg, Cu, Ag, C.

4. The composite material according to claim 3, characterized in that the doping material is selected from one or more of silicon, silicon carbide, silicon germanium carbide, silicon germanium alloy, amorphous silicon, indium antimonide alloy, indium phosphide alloy, black phosphorus, ferrite perovskite, cupric arsenite, barium vanadate, copper selenide, cadmium telluride, germanium selenide, gallium arsenide; and / or The P-type semiconductor material includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro-NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, tetracyanoquinodimethane, copper phthalocyanine, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO, doped or undoped molybdenum sulfide, doped or undoped tungsten sulfide; and / or In the doping material, the doping concentration of the first doping element is 10 16 ~10 20 atoms / cm 3 .

5. A light-emitting device, characterized in that, comprises a cathode, a light-emitting layer, a hole functional layer, and an anode stacked in sequence, wherein, the hole functional layer includes a composite material, the composite material includes a P-type semiconductor material and a doping material, wherein the band gap of the doping material is 1.5 - 2.5 eV; and / or The light-emitting device further includes an interface layer located between the light-emitting layer and the hole functional layer. The interface layer includes an interface material, and the bandgap of the interface material is 1.5 to 2.5 eV.

6. The light-emitting device according to claim 5, wherein the conduction band energy level of the interface material is lower than that of the material of the light-emitting layer. Preferably, the conduction band energy level of the interface material is 0.1 to 0.8 eV lower than that of the material of the light-emitting layer; and / or the conduction band energy level of the doping material is lower than that of the material of the light-emitting layer. Preferably, the conduction band energy level of the doping material is 0.1 to 0.8 eV lower than that of the material of the light-emitting layer.

7. The light-emitting device according to claim 5, wherein the interface material and the doping material are each independently selected from one or more of silicon, silicon carbide, silicon germanium carbide, silicon-germanium alloy, amorphous silicon, indium antimonide alloy, indium phosphide alloy, black phosphorus, ferrite perovskite, cupric arsenite, barium vanadate, copper selenide, cadmium telluride, germanium selenide, gallium arsenide; and / or the interface material and the doping material are each independently a quantum dot material or a non-quantum dot material. Optionally, the average particle size of the quantum dot material is 3 to 20 nm.

8. The light-emitting device according to claim 7, wherein the doping material includes a first doping element, and the first doping element includes one or more of B, Al, Ga, In, Zn, Cd, Hg, Cu, Ag, C; and / or the interface material includes a second doping element, and the second doping element includes one or more of B, Al, Ga, In, Zn, Cd, Hg, Cu, Ag, C.

9. The light-emitting device according to claim 8, wherein In the doping material, the doping concentration of the first doping element is 10 16 ~10 20 atoms / cm 3 ; and / or In the interface material, the doping concentration of the second doping element is 10 16 ~10 20 atoms / cm 3 .

10. The light-emitting device according to claim 5, wherein the thickness of the interface layer satisfies the following formula: where P is the tunneling probability, and 10 -15 ≤ P ≤ 10 -8 , m dn is the effective mass of the electron density of states, E g is the band gap, Δx is the film thickness, is the reduced Planck constant.

11. The light-emitting device according to claim 5, wherein the thickness of the interface layer is less than or equal to 5 nm; and / or when the hole functional layer includes the P-type semiconductor material and the doping material, the mass ratio of the P-type semiconductor material to the doping material is 1:(0.05 to 1).

12. The light-emitting device according to claim 5, wherein The cathode and the anode each independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al. The material of the metal elemental electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba. The alloy electrode includes an Au:Mg alloy electrode or an Ag:Mg alloy electrode; and / or The material of the light-emitting layer includes one or more of organic light-emitting materials and quantum dot light-emitting materials. The organic light-emitting materials include 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III), 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence materials, TTA materials, thermally activated delayed materials, polymers containing B-N covalent bonds, hybrid local charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, etc., and one or more of them;The quantum dot luminescent material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + ions, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of, X is a halogen anion, including Cl - 、Br - 、I - one or more of; the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of, X is a halogen anion, including Cl - 、Br - 、I - one or more of; and / or The hole functional layer includes a hole transport layer, and the P-type semiconductor material includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro-NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p)-phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The hole functional layer includes a hole injection layer, and the P-type semiconductor material includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, derivatives of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide; and / or The light-emitting device further includes an electron transport layer located between the cathode and the light-emitting layer. The material of the electron transport layer includes one or more of inorganic electron transport materials and organic electron transport materials. The inorganic electron transport materials include one or more of metal oxides, doped metal oxides, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the doped metal oxides include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3, and the dopants in the doped metal oxides include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS. The organic electron transport materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds.

13. A method for preparing a light-emitting device, characterized in that, comprising the following steps: providing a first light-emitting device preform, the first light-emitting device preform including a stacked cathode and a light-emitting layer; depositing a P-type semiconductor material on the light-emitting layer to obtain a hole functional layer; and fabricating an anode on the hole functional layer to obtain a light-emitting device; wherein depositing the P-type semiconductor material on the light-emitting layer includes: depositing a composite material of a P-type semiconductor material and a doping material on the light-emitting layer; and / or, before depositing the P-type semiconductor material on the light-emitting layer, further including: depositing an interface material on the light-emitting layer to obtain an interface layer; or providing a second light-emitting device preform, the second light-emitting device preform including an anode; depositing a P-type semiconductor material on the anode to obtain a hole functional layer; and successively fabricating a stacked light-emitting layer and a cathode on the hole functional layer to obtain a light-emitting device; wherein depositing the P-type semiconductor material on the anode includes: depositing a composite material including a P-type semiconductor material and a doping material on the anode; and / or, before successively fabricating a stacked light-emitting layer and a cathode on the hole functional layer, further including: depositing an interface material on the hole functional layer to obtain an interface layer.

14. The manufacturing method according to claim 13, wherein before obtaining the interface layer after depositing the interface material, further including: performing a first ion implantation on the interface material, wherein the first ion implantation includes one or more of plasma treatment, ion irradiation treatment, low-temperature ion implantation, and ion beam implantation; and / or The ions used in the first ion implantation include one or more of B ions, Al ions, Ga ions, In ions, Zn ions, Cd ions, Hg ions, Cu ions, Ag ions, and C ions; and / or the ion energy of the first ion implantation is 0.2 to 5 keV; and / or The ion dose of the first ion implantation is 1×10 16 ~1×10 20 ions / cm 2 .

15. The preparation method according to claim 13, characterized in that, the P-type semiconductor material is an inorganic P-type semiconductor material, and before obtaining the hole functional layer after depositing the composite material including the P-type semiconductor material and the doping material, it further includes: performing a second ion implantation on the doping material, wherein the second ion implantation includes one or more of plasma treatment, ion irradiation treatment, low-temperature ion implantation, and ion beam implantation; and / or the ions used in the second ion implantation include one or more of B ions, Al ions, Ga ions, In ions, Zn ions, Cd ions, Hg ions, Cu ions, Ag ions, and C ions; and / or the ion energy of the second ion implantation is 0.2 to 5 keV; and / or The ion dose of the second ion implantation is 1×10 16 ~1×10 20 ions / cm 2 .

16. A display device, characterized in that, including the light-emitting device according to any one of claims 6 to 8, or including the light-emitting device prepared by the preparation method according to any one of claims 9 to 15.

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