Composite material and optoelectronic device comprising composite material

Abstract

The invention discloses a composite material and a photoelectric device comprising the composite material, the composite material comprises a first metal oxide and a metal halide, and the conductivity of the first metal oxide is regulated and controlled by adding the metal halide so as to meet the requirements of different application scenes.

Description

Technical Field

[0001] The present application relates to the technical field of optoelectronic materials, and particularly relates to a composite material and an optoelectronic device comprising the composite material. Background Art

[0002] Metal oxides refer to compounds formed by the combination of metal elements and oxygen elements. According to the type of conductivity, metal oxides are divided into conductors, semiconductors, and insulators. Among them, semiconductor metal oxides include N-type metal oxides and P-type metal oxides. Metal oxides are widely used in optoelectronic devices such as light-emitting devices, photovoltaic cells, supercapacitors, and photodetectors due to their good electrical conductivity, and metal oxides can be used as carrier functional materials or electrode materials.

[0003] The requirements for the electrical conductivity of metal oxides are different in different application scenarios. Therefore, how to achieve the adjustable electrical conductivity of metal oxides is the technical problem to be solved by the present application. Summary of the Invention

[0004] The present application provides a composite material and an optoelectronic device comprising the composite material to achieve the adjustable electrical conductivity of metal oxides.

[0005] The technical solution of the present application is as follows:

[0006] In a first aspect, the present application provides a composite material, which comprises a first metal oxide and a metal halide, and the metal element of the metal halide comprises Mg.

[0007] In a second aspect, the present application provides an optoelectronic device, which comprises an anode and a cathode arranged oppositely, and a plurality of functional layers arranged between the anode and the cathode, and the material of at least one of the plurality of functional layers comprises the composite material as described in the first aspect.

[0008] The present application provides a composite material and an optoelectronic device comprising the composite material, which have the following technical effects:

[0009] In the composite material, the electrical conductivity of the first metal oxide is regulated by adding a metal halide to meet the requirements of different application scenarios.

[0010] In the optoelectronic device, the device efficiency of the optoelectronic device can be improved by regulating the electrical conductivity of the at least one functional layer. Brief Description of the Drawings

[0011] The following, by a detailed description of the specific embodiments of the present application in conjunction with the drawings, will make the technical solutions and other beneficial effects of the present application obvious.

[0012] Figure 1Schematic diagram of the first optoelectronic device provided by the embodiment of the present application.

[0013] Figure 2 Schematic diagram of the second optoelectronic device provided by the embodiment of the present application.

[0014] The reference signs are as follows:

[0015] 10: optoelectronic device, 101: anode, 102: cathode, 103: electron functional layer, 104: light-emitting layer, 105: hole functional layer, 106: auxiliary layer, 1051: hole injection layer, 1052: hole transport layer. Detailed implementation manners

[0016] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present application.

[0017] Unless otherwise defined, all professional and scientific terms used herein have the same meaning as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to the described content can be applied to the present invention. The preferred implementation methods and materials described herein are only for demonstration purposes, but cannot limit the content of the present application.

[0018] It should be noted that the description order of the following embodiments does not limit the preferred order of the embodiments. The various embodiments of the present application may exist in a range form; it should be understood that the description in a range form is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of the present invention; therefore, it should be considered that the described range description has specifically disclosed all possible sub-ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the counted range, such as 1, 2, 3, 4, 5, and 6, which applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0019] In the description of the present application, the term "comprising" means "including but not limited to".

[0020] The term "at least one" means one or more, and "multiple", "plural" mean two or more. The term "at least one", "at least one of the following items" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b or c" or "at least one of a, b and c" can both be expressed as: a, b, c, a - b (i.e., a and b), a - c, b - c or a - b - c, where a, b and c can be single or multiple respectively.

[0021] The selection range of the term "and / or" includes any one of two or more related listed items, and also includes any and all combinations of the related listed items. The said any and all combinations include combinations of any two related listed items, any more related listed items, or all related listed items. For example, "A and / or B" includes three parallel solutions: A, B, and A + B. Another example, for the technical solution of "A, and / or, B, and / or, C, and / or, D", it includes any one of A, B, C, D (i.e., the technical solutions connected by "logical or"), and also includes any and all combinations of A, B, C, D, that is, it includes combinations of any two or any three of A, B, C, D, and also includes the combination of the four items A, B, C, D (i.e., the technical solutions connected by "logical and").

[0022] In this application, descriptions such as "layer A is formed on one side of layer B", "layer A is formed on the side of layer B away from layer C" or similar can be expressed as layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or can be expressed as layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacer structure layers can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B", "layer A is disposed on the side of layer B away from layer C" can be expressed as layer A is in direct contact with layer B, or can be expressed as other spacer structure layers are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can be expressed as layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and layer A is in direct contact with layer C.

[0023] The term "particle size" refers to the diameter of nanoparticles.

[0024] The embodiments of this application provide a composite material. The composite material includes a first metal oxide and a metal halide, and the metal element of the metal halide includes Mg.

[0025] In the composite material, the conductivity of the first metal oxide is regulated by adding a metal halide to meet the requirements of different application scenarios.

[0026] In the composite material of the embodiments of the present application, the first metal oxide can be in the form of nanoparticles, nanosheets, nanoneedles or nanorods. In some embodiments of the present application, the first metal oxide is in the form of nanoparticles, and the average particle size of the first metal oxide is 2 nm to 20 nm, for example, it can be 2 nm, 5 nm, 8 nm, 10 nm, 12 nm, 15 nm, 20 nm, or a value between any two of the foregoing values.

[0027] In some embodiments of the present application, the first metal oxide includes one or more of ZnO and Zn (1-x) Mg x O, where 0 < x ≤ 0.5, for example, 0.05 ≤ x ≤ 0.2, and x is selected from 0.05, 0.1, 0.15, 0.2 or a value between any two of the foregoing values.

[0028] To regulate the conductivity of Zn (1-x) Mg x O, in some embodiments of the present application, the first metal oxide is Zn (1-x) Mg x O, and the metal halide is MgCl2.

[0029] To facilitate the regulation of the conductivity of the composite material, in some embodiments of the present application, in the composite material, the mass ratio of the first metal oxide to the metal halide is 1:(0.01 - 0.1), for example, it can be 1:0.01, 1:0.03, 1:0.05, 1:0.08, 1:0.1 or a value between any two of the foregoing ratios.

[0030] As an example, to appropriately reduce the conductivity of Zn (1-x) Mg x O, in some embodiments of the present application, the first metal oxide is Zn (1-x) Mg x O, 0.05 ≤ x ≤ 0.2, the metal halide is MgCl2, and the mass ratio of Zn (1-x) Mg x O to MgCl2 is 1:(0.01 - 0.1).

[0031] It should be noted that the composite material can be in a solid state, a solution form or a dispersion form. When the composite material is in a solution form or a dispersion form, the solvent in the solution form or the dispersion medium in the dispersion form includes but is not limited to one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds, amide compounds and sulfone compounds. Among them, the alkanes include but are not limited to one or more of nonane, decane, dodecane, terpane, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane; the aromatic hydrocarbons include but are not limited to one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-cumene, butylbenzene and 1-methylnaphthalene or indene; the halogenated alkanes include but are not limited to one or more of dichloromethane, chloroform and carbon tetrachloride; the alcohol compounds include but are not limited to one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol; the ether compounds include but are not limited to ethylene glycol monomethyl ether; the furan compounds include but are not limited to tetrahydrofuran; the pyridine compounds include but are not limited to pyridine; the amide compounds include but are not limited to N,N-dimethylformamide; the sulfone compounds include but are not limited to dimethyl sulfoxide. As an example, the solvent in the solution form or the dispersion medium in the dispersion form is ethanol.

[0032] The embodiment of the present application also provides a preparation method of a composite material, which can be used to prepare any one of the foregoing composite materials. The preparation method of the composite material includes the steps of: mixing a first metal oxide and a metal halide to obtain a composite material. The first metal oxide and the metal halide are both described as above.

[0033] In some embodiments of the present application, in the step of mixing the first metal oxide and the metal halide, the mass ratio of the first metal oxide to the metal halide is 1:(0.01-0.1), for example, it can be 1:0.01, 1:0.03, 1:0.05, 1:0.08, 1:0.1 or a value between any two of the foregoing ratios.

[0034] In some embodiments of the present application, the step of mixing the first metal oxide and the metal halide includes: providing a first dispersion liquid including the first metal oxide, and dispersing (or dissolving) the metal halide in the first dispersion liquid to obtain a composite material. Among them, the dispersion medium of the first dispersion liquid includes but is not limited to one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds, amide compounds and sulfone compounds, and the concentration of the first metal oxide in the first dispersion liquid is 5 mg / mL to 50 mg / mL.

[0035] In some other embodiments of the present application, the step of mixing the first metal oxide and the metal halide includes: providing a second dispersion including the metal halide, and dispersing (or dissolving) the first metal oxide in the second dispersion to obtain a composite material. Wherein, the dispersion medium of the second dispersion includes, but is not limited to, one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds, amide compounds, and sulfone compounds, and the concentration of the metal halide in the second dispersion is 0.05 mg / mL to 5 mg / mL.

[0036] Embodiments of the present application also provide a thin film. The material of the thin film includes the first metal oxide and the metal halide. For example, the material of the thin film is composed of the first metal oxide and the metal halide, and the conductivity of the thin film is regulated by adding the metal halide. Both the first metal oxide and the metal halide are as described above.

[0037] In order to facilitate the regulation of the conductivity of the thin film, in some embodiments of the present application, in the thin film, the mass ratio of the first metal oxide to the metal halide is 1:(0.01 - 0.1), for example, it can be 1:0.01, 1:0.03, 1:0.05, 1:0.08, 1:0.1, or a value between any two of the foregoing ratios.

[0038] In some embodiments of the present application, the thickness of the thin film is 10 nm to 100 nm, for example, it can be 10 nm, 30 nm, 50 nm, 80 nm, 100 nm, or a value between any two of the foregoing values.

[0039] Embodiments of the present application also provide a method for preparing a thin film, which can be used to prepare any of the thin films described above. The method for preparing the thin film includes the following steps:

[0040] S1. Depositing a third dispersion including the first metal oxide and the metal halide, or depositing a solution including the first metal oxide and the metal halide;

[0041] S2. Drying the deposited third dispersion or the solution to obtain a thin film.

[0042] In step S1, the deposition method of the third dispersion or the solution is the solution method, and the solution method includes, but is not limited to, one or more of spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating. The preparation method of the third dispersion or the solution refers to the description of the composite material above.

[0043] In order to facilitate the regulation of the conductivity of the thin film, in some embodiments of the present application, the mass ratio of the first metal oxide to the metal halide in the third dispersion liquid is 1:(0.01 - 0.1), for example, it can be 1:0.01, 1:0.03, 1:0.05, 1:0.08, 1:0.1 or a value between any two of the foregoing ratios.

[0044] In step S2, the drying treatment includes but is not limited to one or more of heat treatment and vacuum drying treatment.

[0045] The embodiments of the present application further provide an optoelectronic device. The optoelectronic device includes but is not limited to a light-emitting device, a solar cell or a photodetector. The optoelectronic device includes an anode and a cathode disposed opposite to each other, and a plurality of functional layers disposed between the anode and the cathode. The material of at least one of the plurality of functional layers includes the composite material described in any one of the foregoing, or the composite material prepared by the preparation method of any one of the foregoing composite materials, or at least one of the plurality of functional layers includes the thin film described in any one of the foregoing, or the thin film prepared by the preparation method of any one of the foregoing thin films, and can improve the device efficiency of the optoelectronic device by regulating the conductivity of the at least one functional layer, thereby improving the optoelectronic performance and performance stability of the optoelectronic device.

[0046] In some embodiments of the present application, as Figure 1 and Figure 2 shown, the optoelectronic device 10 includes an anode 101 and a cathode 102 disposed opposite to each other, and a plurality of functional layers disposed between the anode 101 and the cathode 102. The plurality of functional layers include an electron functional layer 103. The material of the electron functional layer 103 includes the composite material described in any one of the foregoing, or the composite material prepared by the preparation method of any one of the foregoing composite materials, or the electron functional layer 103 includes the thin film described in any one of the foregoing, or the thin film prepared by the preparation method of any one of the foregoing thin films, and can improve the device efficiency of the optoelectronic device by regulating the conductivity of the electron functional layer, thereby improving the optoelectronic performance and performance stability of the optoelectronic device.

[0047] Among them, the electronic functional layer 103 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 103 is, for example, 10 nm to 100 nm. When the electronic functional layer 103 is a multi-layer structure, the electronic functional layer 103 includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 103 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode 102 than the hole blocking layer; for the electronic functional layer 103 including an electron transport layer and a hole blocking layer, the electron transport layer is closer to the cathode 102 than the hole blocking layer; for the electronic functional layer 103 including an electron injection layer and an electron transport layer, the electron injection layer is closer to the cathode 102 than the electron transport layer. It should be noted that when the electronic functional layer 103 is a multi-layer structure, the material of one layer, some layers, or all layers thereof may include the composite material described in any one of the foregoing, or the composite material prepared by the preparation method of any one of the foregoing composite materials, or one layer, some layers, or all layers include the thin film described in any one of the foregoing, or the thin film prepared by the preparation method of any one of the foregoing thin films.

[0048] In some embodiments of the present application, the optoelectronic device 10 is a light-emitting device. Continuing to refer to Figure 1 and Figure 2 , the plurality of functional layers further include a light-emitting layer 104, and the light-emitting layer 104 is disposed between the electronic functional layer 103 and the anode 101. The material of the light-emitting layer 104 includes one or more of an organic light-emitting material and a quantum dot light-emitting material. Among them, the organic light-emitting material includes, but is not limited to, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, polymer containing B-N covalent bond, hybrid local charge transfer excited state material, exciplex light-emitting material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, etc.

[0049] The quantum dot light-emitting material includes, but is not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dot light-emitting material includes, but is not limited to, one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, and the shell layer of the core-shell structure quantum dot is one or more. The average particle size of the quantum dot light-emitting material can be, for example, 2 nm to 20 nm, exemplified by 2 nm, 5 nm, 8 nm, 10 nm, 13 nm, 15 nm, 20 nm, or a value between any two of the foregoing values.

[0050] For single-component quantum dots and core-shell structure quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots, or the material of the shell of the core-shell structure quantum dots includes, but is not limited to, one or more of II-VI group compounds, III-V group compounds, III-VI group compounds, IV-VI group compounds, and I-III-VI group compounds. Among them, the II-VI group compounds include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The III-VI group compounds include, but are not limited to, one or more of In2S3, In2Se3, InGaS3, and InGaSe3. The III-V group compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The IV-VI group compounds include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The I-III-VI group compounds include, but are not limited to, one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.

[0051] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + , M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0052] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, where C is formamidinium, M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0053] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, where B is selected from organic amine cations, and organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe2+ , Ge 2+ , Yb 2+ or Eu 2+ , where X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0054] When the material of the light-emitting layer 104 includes a quantum dot light-emitting material, in order to improve the solution processability of the quantum dot light-emitting material and further enhance the light-emitting efficiency of the optoelectronic device 10, in some embodiments of the present application, a ligand is further connected to the surface of the quantum dot light-emitting material. The ligand can be a common ligand in the art, including but not limited to a C1-C 30 fatty carboxylic acid ligand, a C6-C 30 aromatic carboxylic acid ligand, a C1-C 30 fatty thiol ligand, a C6-C 30 thiol aromatic ligand, a C1-C 30 fatty amine ligand, a C6-C 30 aromatic amine ligand, a C1-C 30 fatty phosphine ligand, a C6-C 30 aromatic phosphine ligand, and a C6-C 30 aromatic phosphate ligand, and one or more of halogen ligands.

[0055] Among them, the C1-C 30 fatty carboxylic acid ligands include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; the C6-C 30 aromatic carboxylic acid ligands include but are not limited to one or more of benzoic acid, dibenzoic acid, and 1-naphthoic acid. The C1-C 30 fatty thiol ligands include but are not limited to one or more of hexanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol, dodecanethiol, hexadecanethiol, and octadecanethiol. The C6-C 30 thiol aromatic ligands include but are not limited to one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. The C1-C 30 fatty amine ligands include but are not limited to one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, octadecylamine, and oleylamine. The C6-C 30 aromatic amine ligands include but are not limited to one or more of aniline, indanpropylamine, 4-octylaniline, and benzidine. C1-C30 The fatty phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6-C 30 The aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, C6-C 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. The halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0056] In some embodiments of the present application, the plurality of functional layers further includes a hole functional layer 105, and the hole functional layer 105 is disposed between the electron functional layer 103 and the anode 101. Continuing to refer to Figure 1 and Figure 2 , the optoelectronic device 10 is a light-emitting device, and the hole functional layer 105 is disposed between the anode 101 and the light-emitting layer 104. The hole functional layer 105 may be a single-layer structure or a multi-layer structure. The thickness of the hole functional layer 105 is, for example, 10 nm to 100 nm. When the hole functional layer 105 is a multi-layer structure, the hole functional layer 105 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 105 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 101 than the electron blocking layer; for the hole functional layer 105 including a hole transport layer and an electron blocking layer, the hole transport layer is closer to the anode 101 than the electron blocking layer; for the hole functional layer 105 including a hole injection layer and a hole transport layer, the hole injection layer is closer to the anode 101 than the hole transport layer.

[0057] The materials of the hole functional layer 105 include, but are not limited to, one or more of organic compounds, a first inorganic compound material, and a second inorganic compound material. Among them, the organic compounds include, but are not limited to, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (abbreviation: PEDOT:PSS, CAS number 155090-83-8), copper phthalocyanine (CAS number 147-14-8), titanium oxyphthalocyanine (CAS number 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (CAS number 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS number 105598-27-4), polyaniline (CAS number 25233-30-1), polypyrrole (CAS number 30604-81-0), 3-hexyl-substituted polythiophene (CAS number 104934-50-1), poly(9-vinylcarbazole) (abbreviation: PVK, CAS number 25067-59-8), 4,4'-bis(9-carbazolyl)biphenyl (abbreviation: CBP, CAS number 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviation: TAPC, CAS number 58473-78-2), poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviation: TFB, CAS number 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorenyl-2,7-diyl)] (CAS number 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS number 124729-98-2), 4,4',4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA, CAS number 139092-78-7), 4,4',4'-tris(2-naphthylphenylamino)triphenylamine (CAS number 185690-41-9), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: NPB, CAS number 123847-85-8), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: TPD, CAS number 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS number 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviation: Spiro-TPD,One or more of the following: (CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (abbreviated as PTTA, CAS No. 1333317-99-9), and 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (abbreviated as Spiro-omeTAD, CAS No. 207739-72-8); and / or, the first inorganic compound material includes but is not limited to one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide; and / or, the second inorganic compound material includes one or more doped second inorganic compounds, the host material of the doped second inorganic compound is selected from graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), p-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2), or tungsten sulfide (such as WS2), the doping element of the doped second inorganic compound is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements, and the proportion of the molar amount of the doping element in the total molar amount of the doped second inorganic compound does not exceed 50%.

[0058] It can be understood that when the hole functional layer 105 contains multiple materials and the hole functional layer 105 is a multi-layer structure, the multiple materials can all be in the same layer, or in different layers respectively, or part of them in the same layer. For example, as Figure 1 and Figure 2 shown, when the hole functional layer 105 is composed of a hole injection layer 1051 and a hole transport layer 1052 arranged in a stacked manner, the materials of the hole functional layer 105 include PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers respectively, the material of the hole injection layer 1051 is PEDOT:PSS, and the material of the hole transport layer 1052 is TFB; or, the materials of the hole functional layer 105 include PEDOT:PSS and poly((9,9-dioctylfluorene-2,7-diyl)-alt-(9-(2-ethylhexyl)-carbazole-3,6-diyl)) (abbreviated as PF8Cz), the material of the hole injection layer 1051 is PEDOT:PSS, and the material of the hole transport layer 1052 is PF8Cz. It should be noted that PF8Cz is more rigid than TFB and can effectively suppress the "electron leakage" problem existing in the optoelectronic device 10, and further improves the device efficiency of the optoelectronic device 10.

[0059] It should be noted that there are problems of unbalanced electron-hole transport in some optoelectronic devices, resulting in poor device efficiency of optoelectronic devices. For example, in QLED devices, there is a problem that the electron injection level is much greater than the hole injection level, especially in blue QLED devices. In order to promote the balance of electron-hole transport, on the one hand, the electron injection level can be appropriately reduced, and on the other hand, the hole injection level can be increased. In the optoelectronic device 10 of the embodiment of the present application, the material of the electron functional layer 103 may include the composite material described in any one of the foregoing, or the composite material prepared by the preparation method of any one of the foregoing composite materials, or the electron functional layer 103 includes the thin film described in any one of the foregoing, or the thin film prepared by the preparation method of any one of the foregoing thin films. By appropriately reducing the conductivity of the electron functional layer 103, the electron injection level is reduced, thereby promoting the balance of electron-hole transport, and further improving the device efficiency of the optoelectronic device 10.

[0060] In order to further reduce the electron injection level of the optoelectronic device 10 to further promote the balance of electron-hole transport, in some embodiments of the present application, as Figure 2 shown, the plurality of functional layers further include an auxiliary layer 106, and the material of the auxiliary layer 106 includes an insulating compound, and the insulating compound is, for example, selected from one or more of polymethyl methacrylate, polyethylene terephthalate, polyvinylpyrrolidone, polyethylene oxide, and polyimide.

[0061] In order to further promote the balance of electron-hole transport of the optoelectronic device 10, in some embodiments of the present application, the average thickness of the auxiliary layer 106 is 1 nm to 5 nm, for example, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, or a value between any two of the foregoing values.

[0062] In some embodiments of the present application, as Figure 1 shown, the plurality of functional layers are composed of an anode 101, a hole functional layer 105, a light-emitting layer 104, an electron functional layer 103, and a cathode 102 which are sequentially stacked.

[0063] In some other embodiments of the present application, as Figure 2 shown, the plurality of functional layers are composed of an anode 101, a hole functional layer 105, a light-emitting layer 104, an auxiliary layer 106, an electron functional layer 103, and a cathode 102 which are sequentially stacked.

[0064] It can be understood that the optoelectronic device 10 may further include a substrate disposed on a side of the bottom electrode away from the plurality of functional layers. The substrate may be a rigid substrate or a flexible substrate. The materials of the rigid substrate include, but are not limited to, one or more of glass, ceramics, and silicon wafers. The materials of the flexible substrate include, but are not limited to, one or more of polyimide, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, and polyethersulfone.

[0065] It should be noted that the preparation methods of the respective functional layers in the optoelectronic device include, but are not limited to, chemical methods and / or physical methods. Among them, the chemical methods include, but are not limited to, one or more of chemical vapor deposition, sequential ionic layer adsorption and reaction, anodic oxidation, electrodeposition, and coprecipitation. The physical methods include, but are not limited to, physical coating methods and solution methods. The physical coating methods include, but are not limited to, one or more of thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. The solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, doctor blading, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating. After the respective functional layers of the optoelectronic device are prepared, a packaging treatment process is also required. The packaging treatment can be performed by using common machine packaging or manual packaging. In the environment of the packaging treatment, the oxygen content and the water content are both lower than 0.1 ppm to ensure the stability of the optoelectronic device. Specifically, the packaging materials used to form the packaging layer are, for example, selected from one or more of ultraviolet light glue, metal thin films, and glass glue. As an example, the packaging material is acrylic resin or epoxy resin.

[0066] The embodiments of the present application further provide an electronic device, which includes any one of the optoelectronic devices described above. The electronic device may be, for example, any electronic product with a display function, including but not limited to smartphones, tablet personal computers, mobile phones, video telephones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, in-vehicle navigators, electronic billboards, automated teller machines, smart bracelets, smart watches, Virtual Reality (VR) devices, or wearable devices.

[0067] The technical solutions and technical effects of the present application will be described in detail below through specific examples, comparative examples, and experimental examples. The following examples are only partial examples of the present application and do not specifically limit the present application.

[0068] Material Example 1

[0069] This example provides a composite material and a preparation method thereof. The composite material includes Zn 0.85 Mg 0.15 O nanoparticles and MgCl2. In the composite material, the mass ratio of Zn 0.85 Mg 0.15 O to MgCl2 is 1:0.02.

[0070] The preparation method of the composite material in this example includes the following steps:

[0071] S1.1. Provide 10 mL of Zn 0.85 Mg 0.15 O-ethanol solution. The concentration of Zn 0.85 Mg 0.15 O in the Zn 0.85 Mg 0.15 O-ethanol solution is 30 mg / mL. Take 6 mg of MgCl2 and dissolve it in the aforementioned Zn 0.85 Mg 0.15 O-ethanol solution to obtain a solution including the composite material;

[0072] S1.2. Under a nitrogen atmosphere at normal temperature and pressure, spin-coat the solution containing the composite material on one side of the substrate, and then place it in a nitrogen atmosphere at 100 °C for constant-temperature heat treatment to cure into a film, obtaining a composite material with a thin-film morphology (average thickness of 35 nm).

[0073] Among them, Zn 0.85 Mg 0.15 The preparation method of the O-ethanol solution includes the following steps:

[0074] S10. Mix 5.5 g of zinc acetate dihydrate, 0.46 g of magnesium acetate tetrahydrate, and 150 mL of ethanol, and stir at 80 °C until the zinc acetate dihydrate is completely dissolved to obtain a mixture;

[0075] S20. Place the mixture in a water bath at 0 °C, and slowly add 20 mL of potassium hydroxide aqueous solution (the concentration of potassium hydroxide is 1.75 mol / L) to the mixture, and stir until it becomes clear to obtain a uniformly transparent solution;

[0076] S30. Add heptane to the solution prepared in step S20 to form a precipitate. The volume ratio of the solution to heptane is 3:1, then centrifuge and collect the precipitate. Dissolve the precipitate in methanol again, add heptane again, centrifuge and collect the precipitate, and repeat 2 times. The finally collected precipitate is Zn 0.85 Mg 0.15 O nanoparticles. Dissolve the Zn 0.85 Mg 0.15 O nanoparticles in ethanol to obtain a nano-ZnO-ethanol solution with a concentration of 30 mg / mL.

[0077] Material Example 2

[0078] This example provides a composite material and its preparation method. The composite material includes Zn 0.85 Mg 0.15 O nanoparticles and MgCl2. In the composite material, the mass ratio of Zn 0.85 Mg 0.15 O to MgCl2 is 1:0.01.

[0079] Compared with the preparation method of the composite material in Material Example 1, the difference in the preparation method of the composite material in this example is that "6 mg of MgCl2" in step S1.1 is replaced with "3 mg of MgCl2".

[0080] Material Example 3

[0081] This example provides a composite material and its preparation method. The composite material includes Zn 0.85 Mg 0.15ZnO nanoparticles and MgCl₂. In the composite material, Zn 0.85 Mg 0.15 The mass ratio of ZnO to MgCl₂ is 1:0.05.

[0082] Compared with the preparation method of the composite material in Material Example 1, the difference in the preparation method of the composite material in this example is that: in step S1.1, "6 mg of MgCl₂" is replaced with "15 mg of MgCl₂".

[0083] Material Example 4

[0084] This example provides a composite material and its preparation method. The composite material includes Zn 0.85 Mg 0.15 O nanoparticles and MgCl₂. In the composite material, Zn 0.85 Mg 0.15 The mass ratio of ZnO to MgCl₂ is 1:0.1.

[0085] Compared with the preparation method of the composite material in Material Example 1, the difference in the preparation method of the composite material in this example is that: in step S1.1, "6 mg of MgCl₂" is replaced with "30 mg of MgCl₂".

[0086] Material Example 5

[0087] This example provides a composite material and its preparation method. The composite material includes Zn 0.8 Mg 0.2 O nanoparticles and MgCl₂. In the composite material, Zn 0.8 Mg 0.2 The mass ratio of ZnO to MgCl₂ is 1:0.02.

[0088] Compared with the preparation method of the composite material in Material Example 1, the difference in the preparation method of the composite material in this example is that: in step S1.1, "Zn 0.85 Mg 0.15 O" is replaced with "Zn 0.8 Mg 0.2 O".

[0089] Among them, compared with the preparation method of the Zn 0.85 Mg 0.15 O-ethanol solution in Material Example 1, the difference in the preparation method of the Zn 0.8 Mg 0.2 O-ethanol solution in this example is that: step S10 is replaced with "Mix 5.5 g of zinc acetate dihydrate, 0.62 g of magnesium acetate tetrahydrate and 150 mL of ethanol, and stir at 80 °C until the zinc acetate dihydrate is completely dissolved to obtain a mixture".

[0090] Material Comparative Example 1

[0091] This comparative example provides a composite material and a preparation method thereof. The composite material includes Zn 0.85 Mg 0.15 O nanoparticles and KCl. In the composite material, the mass ratio of Zn 0.85 Mg 0.15 O to KCl is 1:0.02.

[0092] Compared with the preparation method of the composite material in Material Example 1, the difference in the preparation method of the composite material in this comparative example is that: in step S1.1, "6 mg of MgCl2" is replaced with "6 mg of KCl".

[0093] Material Comparative Example 2

[0094] This comparative example provides a composite material and a preparation method thereof. The composite material includes Zn 0.85 Mg 0.15 O nanoparticles and NaCl. In the composite material, the mass ratio of Zn 0.85 Mg 0.15 O to NaCl is 1:0.02.

[0095] Compared with the preparation method of the composite material in Material Example 1, the difference in the preparation method of the composite material in this comparative example is that: in step S1.1, "6 mg of MgCl2" is replaced with "6 mg of NaCl".

[0096] Device Example 1

[0097] This example provides an optoelectronic device and a preparation method thereof. The optoelectronic device is a quantum dot light-emitting diode with a normal structure, as Figure 1 shown. In the direction from bottom to top, the optoelectronic device 10 includes an anode 101, a hole functional layer 105, a light-emitting layer 104, an auxiliary layer 106, an electron functional layer 103, and a cathode 102 that are sequentially stacked. Among them, the hole functional layer 105 is composed of a hole injection layer 1051 and a hole transport layer 1052 that are stacked, and the hole injection layer 1051 is closer to the anode 101 than the hole transport layer 1052; the electron functional layer 103 is a single-layer structure, and the electron functional layer 103 is an electron transport layer. The light-emitting area of the optoelectronic device 10 is 0.04 cm 2 .

[0098] The structural composition of each layer in the optoelectronic device 10 is as follows:

[0099] The material of the anode 101 is ITO, and the average thickness of the anode 101 is 50 nm;

[0100] The material of the cathode 102 is Ag, and the average thickness of the cathode 102 is 100 nm;

[0101] The material of the electron functional layer 103 is the composite material prepared in Material Example 1, and the average thickness of the electron functional layer 103 is 35 nm;

[0102] The material of the light-emitting layer 104 is light-emitting quantum dots with a core-shell structure. The material of the core of the light-emitting quantum dots is CdZnSe, the material of the shell of the light-emitting quantum dots is CdZnS, the average particle size of the light-emitting quantum dots is 12 nm, the emission color of the light-emitting quantum dots is blue, and the average thickness of the light-emitting layer 104 is 40 nm;

[0103] The material of the hole injection layer 1051 is PEDOT:PSS, and the average thickness of the hole injection layer 1051 is 40 nm;

[0104] The material of the hole transport layer 1052 is TFB, and the average thickness of the hole transport layer 1052 is 30 nm;

[0105] The material of the auxiliary layer 106 is polymethyl methacrylate, and the average thickness of the auxiliary layer 106 is 3 nm.

[0106] The preparation method of the optoelectronic device in this example includes the following steps:

[0107] S10.1. Provide a glass substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove visible impurities on the surface, and then ultrasonically clean the substrate including ITO in deionized water for 15 min, in acetone for 15 min, in ethanol for 15 min, and in isopropanol for 15 min in sequence. After drying, perform ultraviolet-ozone surface treatment for 20 min to obtain a substrate including an anode;

[0108] S10.2. Under the air environment of normal temperature and pressure, spin-coat an aqueous solution of PEDOT:PSS on the side of the anode away from the substrate, and then place it in a nitrogen atmosphere at 150 °C for constant-temperature heat treatment to cure into a film to obtain a hole injection layer;

[0109] S10.3. Under the nitrogen environment of normal temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 8 mg / mL on the side of the hole injection layer away from the anode, and then place it in a nitrogen atmosphere at 150 °C for constant-temperature heat treatment to cure into a film to obtain a hole transport layer;

[0110] S10.4. Under the nitrogen environment of normal temperature and pressure, spin-coat a light-emitting quantum dot-n-hexane solution with a concentration of 25 mg / mL on the side of the hole transport layer away from the hole injection layer, and then place it in a nitrogen atmosphere at 80 °C for constant-temperature heat treatment to cure into a film to obtain a light-emitting layer;

[0111] S10.5. Under a nitrogen environment at normal temperature and pressure, spin-coat a poly(methyl methacrylate)-acetone solution with a concentration of 0.5 mg / mL on the side of the light-emitting layer away from the hole-transporting layer, and then place it in a nitrogen atmosphere at 110 °C for constant-temperature heat treatment to cure into a film, obtaining an auxiliary layer;

[0112] S10.6. Refer to the preparation method of the composite material in Material Example 1 to form an electron functional layer on the side of the auxiliary layer away from the light-emitting layer;

[0113] S10.7. Place the stacked structure completed in Step S10.6 in a vacuum coating machine, evacuate to 4×10 -6 mbar, evaporate Ag on the side of the electron functional layer away from the light-emitting layer through a mask plate to obtain a cathode, and finally encapsulate it with an ultraviolet curable adhesive to obtain an optoelectronic device.

[0114] Device Example 2

[0115] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference of the optoelectronic device in this example is that: the material of the electron functional layer is replaced with the composite material prepared in Material Example 2.

[0116] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference of the preparation method of the optoelectronic device in this example is that: Step S10.6 is replaced with "refer to the preparation method of the composite material in Material Example 2 to form an electron functional layer on the side of the auxiliary layer away from the light-emitting layer".

[0117] Device Example 3

[0118] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference of the optoelectronic device in this example is that: the material of the electron functional layer is replaced with the composite material prepared in Material Example 3.

[0119] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference of the preparation method of the optoelectronic device in this example is that: Step S10.6 is replaced with "refer to the preparation method of the composite material in Material Example 3 to form an electron functional layer on the side of the auxiliary layer away from the light-emitting layer".

[0120] Device Example 4

[0121] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference of the optoelectronic device in this example is that: the material of the electron functional layer is replaced with the composite material prepared in Material Example 4.

[0122] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this example is that step S10.6 is replaced with "forming an electron functional layer on the side of the auxiliary layer away from the light-emitting layer with reference to the preparation method of the composite material in Material Example 4".

[0123] Device Example 5

[0124] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference in the optoelectronic device in this example is that the material of the electron functional layer is replaced with the composite material prepared in Material Example 5.

[0125] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this example is that step S10.6 is replaced with "forming an electron functional layer on the side of the auxiliary layer away from the light-emitting layer with reference to the preparation method of the composite material in Material Example 5".

[0126] Device Example 6

[0127] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference in the optoelectronic device in this example is that the material of the hole transport layer is replaced with "PF8Cz (purchased from Dongguan Fuan Optoelectronic Technology Co., Ltd.)".

[0128] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this example is that in step S10.3, "8 mg / mL TFB-chlorobenzene solution" is replaced with "8 mg / mL PF8Cz-chlorobenzene solution".

[0129] Device Example 7

[0130] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference in the optoelectronic device in this example is that the auxiliary layer is omitted.

[0131] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this example is that step S10.5 is omitted, and step S10.6 is replaced with "forming an electron functional layer on the side of the light-emitting layer away from the hole transport layer with reference to the preparation method of the composite material in Material Example 1".

[0132] Device Example 8

[0133] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference in the optoelectronic device in this example is that the auxiliary layer is omitted, and the material of the hole transport layer is replaced with "PF8Cz".

[0134] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this example lies in: omitting step S10.5, replacing step S10.6 with "forming an electron functional layer on the side of the light-emitting layer away from the hole transport layer with reference to the preparation method of the composite material in Material Example 1", and replacing "8 mg / mL TFB-chlorobenzene solution" in step S10.3 with "8 mg / mL PF8Cz-chlorobenzene solution".

[0135] Device Comparative Example 1

[0136] This comparative example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference in the optoelectronic device in this comparative example lies in: replacing the material of the electron functional layer with Zn 0.85 Mg 0.15 O in Material Example 1, and omitting the auxiliary layer.

[0137] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this comparative example lies in: replacing step S10.6 with "spin-coating a 30 mg / mL Zn 0.85 Mg 0.15 O-ethanol solution on the side of the light-emitting layer away from the hole transport layer under a nitrogen atmosphere at normal temperature and pressure, and then placing it in a nitrogen atmosphere at 100 °C for constant-temperature heat treatment to cure into a film to obtain the electron functional layer", and omitting step S10.5.

[0138] Device Comparative Example 2

[0139] This comparative example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference in the optoelectronic device in this comparative example lies in: replacing the material of the electron functional layer with Zn 0.85 Mg 0.15 O in Material Example 1, omitting the auxiliary layer, and replacing the material of the hole transport layer with "PF8Cz".

[0140] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this comparative example lies in: replacing step S10.6 with "spin-coating a 30 mg / mL Zn 0.85 Mg 0.15An O-ethanol solution, and then placed in a nitrogen atmosphere at 100 °C for isothermal heat treatment to solidify into a film, obtaining an electron functional layer", and omitting step S10.5, and replacing the "8 mg / mL TFB-chlorobenzene solution" in step S10.3 with an "8 mg / mL PF8Cz-chlorobenzene solution".

[0141] Device Comparative Example 3

[0142] This comparative example provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Device Example 1, the difference in the optoelectronic device in this comparative example is that: the material of the electron functional layer is replaced with Zn in Material Example 1 0.85 Mg 0.15 O.

[0143] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this comparative example is that: step S10.6 is replaced with "spin-coating a Zn solution with a concentration of 30 mg / mL on the side of the light-emitting layer away from the hole transport layer in a nitrogen environment at normal temperature and pressure 0.85 Mg 0.15 O-ethanol solution, and then placed in a nitrogen atmosphere at 100 °C for isothermal heat treatment to solidify into a film, obtaining an electron functional layer".

[0144] Device Comparative Example 4

[0145] This comparative example provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Device Example 1, the difference in the optoelectronic device in this comparative example is that: the material of the electron functional layer is replaced with Zn in Material Example 1 0.85 Mg 0.15 O, and the material of the hole transport layer is replaced with "PF8Cz".

[0146] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this comparative example is that: step S10.6 is replaced with "spin-coating a Zn solution with a concentration of 30 mg / mL on the side of the light-emitting layer away from the hole transport layer in a nitrogen environment at normal temperature and pressure 0.85 Mg 0.15 O-ethanol solution, and then placed in a nitrogen atmosphere at 100 °C for isothermal heat treatment to solidify into a film, obtaining an electron functional layer", and replacing the "8 mg / mL TFB-chlorobenzene solution" in step S10.3 with an "8 mg / mL PF8Cz-chlorobenzene solution".

[0147] Device Comparative Example 5

[0148] This comparative example provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Device Example 1, the difference of the optoelectronic device in this comparative example lies in that: the material of the electron functional layer is replaced with the composite material prepared in Material Comparative Example 1.

[0149] Compared with the method for preparing the optoelectronic device in Device Example 1, the difference of the method for preparing the optoelectronic device in this comparative example lies in that: step S10.6 is replaced with "forming an electron functional layer on the side of the auxiliary layer away from the light-emitting layer with reference to the method for preparing the composite material in Material Comparative Example 1".

[0150] Device Comparative Example 6

[0151] This comparative example provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Device Example 1, the difference of the optoelectronic device in this comparative example lies in that: the material of the electron functional layer is replaced with the composite material prepared in Material Comparative Example 2.

[0152] Compared with the method for preparing the optoelectronic device in Device Example 1, the difference of the method for preparing the optoelectronic device in this example lies in that: step S10.6 is replaced with "forming an electron functional layer on the side of the auxiliary layer away from the light-emitting layer with reference to the method for preparing the composite material in Material Comparative Example 2".

[0153] Experimental Example

[0154] The performances of the optoelectronic devices in Device Examples 1 to 11 and Device Comparative Examples 1 to 6 in the state of being encapsulated for 1 h were respectively detected. The performance test was carried out in an environment with a temperature of 25 °C and a relative humidity of 40%.

[0155] The detection of the optoelectronic performance was carried out using a Fosida FPD optical property measurement device (including an efficiency test system built with elements such as Ocean Optics USB2000, LabView-controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley6485, optical fiber with an inner diameter of 50 μm, device test probe and fixture, various related connecting wires and data cards, efficiency test dark box and data acquisition system, etc.) to obtain parameters such as the turn-on voltage, current, brightness, and emission spectrum of each optoelectronic device, and then calculate to obtain key parameters such as the maximum external quantum efficiency (EQE max , %), power efficiency, etc.

[0156] The performance detection data of each optoelectronic device are shown in Table 1 below:

[0157] Table 1

[0158]

[0159]

[0160] As can be seen from Table 2, compared with the optoelectronic devices in Device Comparative Examples 1 to 6, the optoelectronic devices in Device Examples 1 to 8 have higher device efficiency. Taking Device Example 1 and Device Comparative Example 1 as an example, the device efficiency of the optoelectronic device in Device Example 1 is 3.3 times that of the optoelectronic device in Device Comparative Example 1.

[0161] It can be seen therefrom that the material of the electron functional layer includes a first metal oxide and a metal halide, the metal element of the metal halide includes Mg, and the first metal oxide is selected from one or more of ZnO and Zn (1-x) Mg x O, which can appropriately reduce the electron injection level, thereby promoting the electron-hole transport balance, and further improving the device efficiency of the optoelectronic device. Further, an auxiliary layer with an insulating compound as the material is added between the electron functional layer and the light-emitting layer, which can further promote the electron-hole transport balance; in addition, compared with the material of the hole transport layer being selected from TFB, the material of the hole transport layer is selected from PF8Cz, which can further improve the device efficiency of the optoelectronic device. The reason is that PF8Cz is more rigid than TFB and can effectively suppress the problem of electron leakage.

[0162] The device efficiency of the optoelectronic devices in Device Comparative Example 5 and Device Comparative Example 6 is low. The reason is that the metal element in the metal halide is selected from Na or K, which increases the conductivity of the electron functional layer, thereby increasing the electron injection level, and further exacerbating the electron-hole transport imbalance, resulting in a low device efficiency of the optoelectronic device.

[0163] The above has introduced in detail a composite material, a thin film, a preparation method of the thin film, and an optoelectronic device provided by an embodiment of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A composite material, characterized in that, The composite material includes a first metal oxide and a metal halide, and the metal element of the metal halide includes Mg.

2. The composite material according to claim 1, characterized in that, The first metal oxide includes one or more of ZnO, Zn (1-x) , Mg x , and O, where 0 < x ≤ 0.5; (1-x) Mg x O, where 0 < x ≤ 0.5; And / or, the first metal oxide is in the form of nanoparticles, and the average particle size of the first metal oxide is 2 nm to 20 nm.

3. The composite material according to claim 2, wherein, 0.05≤x≤0.2； and / or, the first metal oxide is Zn (1-x) Mg x O, and the metal halide is MgCl2.

4. The composite material according to any one of claims 1 to 3, characterized in that, The mass ratio of the first metal oxide to the metal halide is 1:(0.01 - 0.1).

5. An optoelectronic device includes an anode and a cathode disposed opposite to each other, and a plurality of functional layers disposed between the anode and the cathode, characterized in that, The material of at least one of the plurality of functional layers includes the composite material described in any one of claims 1 to 4.

6. The optoelectronic device according to claim 5, characterized in that, The plurality of functional layers include an electronic functional layer, and the material of the electronic functional layer is the composite material described in any one of claims 1 to 4.

7. The optoelectronic device according to claim 6, wherein, The plurality of functional layers further include a light-emitting layer, the light-emitting layer is disposed between the electronic functional layer and the anode, and the material of the light-emitting layer includes one or more of a quantum dot light-emitting material and an organic light-emitting material; And / or, the plurality of functional layers further include an auxiliary layer, and the auxiliary layer is disposed between the electronic functional layer and the anode; for the optoelectronic device including a light-emitting layer, it is disposed between the electronic functional layer and the light-emitting layer; the material of the auxiliary layer includes a polymer material; And / or, the plurality of functional layers further include a hole functional layer, and the hole functional layer is disposed between the electronic functional layer and the anode.

8. The optoelectronic device according to claim 7, characterized in that, The polymer material is an insulating material; Optionally, the polymer material is selected from one or more of polymethyl methacrylate, polyethylene terephthalate, polyvinylpyrrolidone, polyethylene oxide, and polyimide; And / or, the average thickness of the auxiliary layer is 1 nm to 5 nm.

9. The optoelectronic device according to any one of claims 5 to 8, characterized in that, The material of the hole functional layer includes one or more of an organic compound, a first inorganic compound material, and a second inorganic compound material; Among them, the organic compound is selected from one or more of poly((9,9-dioctylfluorene-2,7-diyl)-alt-(9-(2-ethylhexyl)-carbazole-3,6-diyl)), poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium oxyphthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazolyl)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorene-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4''-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene; and / or, the first inorganic compound material is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide; and / or, the second inorganic compound material includes one or more doped second inorganic compounds, the host material of the doped second inorganic compound is selected from graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide, and the doping element of the doped second inorganic compound is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.

10. The optoelectronic device according to claim 9, characterized in that, The hole functional layer includes a hole injection layer and a hole transport layer which are stacked, the hole injection layer is closer to the anode than the hole transport layer, the material of the hole injection layer is poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), and the material of the hole transport layer is poly((9,9-dioctylfluorene-2,7-diyl)-alt-(9-(2-ethylhexyl)-carbazole-3,6-diyl)).

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