Thin film and preparation method thereof, photoelectric device and display device

Abstract

The invention discloses a thin film and a preparation method thereof, a photoelectric device and a display device, the thin film comprises at least two splicing units, the splicing units are spliced through splicing surfaces, and the material of any splicing unit comprises a semiconductor material. According to the thin film provided by the invention, multi-view-angle refraction of light can be increased through the splicing surfaces, and multi-view-angle light emitting uniformity is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and more particularly, to a thin film, a preparation method thereof, an optoelectronic device, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). Due to their excellent display performances such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display, OLEDs have become the mainstream technology in the field of display technology. QLEDs have the advantages of saturated emission light color and adjustable wavelength, and high photoluminescence and electroluminescence quantum yields. In recent years, they have become strong competitors of OLEDs.

[0003] The structures of traditional OLED and QLED devices generally include an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode. The hole injection layer, the hole transport layer, the light-emitting layer, and the electron transport layer all belong to functional layers. Under the action of an electric field, the holes generated by the anode of the light-emitting diode and the electrons generated by the cathode move, are respectively injected into the hole transport layer and the electron transport layer, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules to finally generate visible light.

[0004] The structure of the existing functional layer thin film makes the light emitted along the thickness direction of the thin film extremely uneven with the light emitted from other viewing angles, resulting in a poor viewing angle and affecting the current efficiency and color saturation of the optoelectronic device. Summary of the Invention

[0005] Based on this, the present application provides a thin film, a preparation method thereof, an optoelectronic device, and a display device.

[0006] To achieve the above object, an embodiment of the present application provides a thin film, including at least two splicing units, the splicing units being spliced through a splicing surface, and the material of any one of the splicing units including a semiconductor material.

[0007] An embodiment of the present application further provides a preparation method of a thin film, including:

[0008] Providing a splicing unit;

[0009] Providing at least one more splicing unit on the splicing unit, splicing with the previous splicing unit through a splicing surface, and the material of any one of the splicing units including a semiconductor material; obtaining a thin film.

[0010] An embodiment of the present application further provides an optoelectronic device, including an anode, a functional layer, and a cathode stacked in sequence; the functional layer includes the above thin film, or includes the thin film prepared by the above preparation method.

[0011] An embodiment of the present application further provides a display device, and the display device includes the above-mentioned optoelectronic device.

[0012] The present application has the following beneficial effects:

[0013] The film prepared by the present application can increase the refraction of light from multiple perspectives through the splicing surface, improve the light emission uniformity from multiple perspectives, thereby enhancing the luminous brightness of the optoelectronic device, and at the same time realizing the selective absorption of the emission wavelength, obtaining an optoelectronic device with higher color saturation. Description of the Drawings

[0014] Figure 1 is a schematic diagram of a film in the prior art;

[0015] Figure 2 is a curve graph of the light emission brightness of the film from each perspective in the prior art;

[0016] Figure 3 is a schematic structural diagram of a film provided by an embodiment of the present application;

[0017] Figure 4 is a side view of another film structure provided by an embodiment of the present application;

[0018] Figure 5 is a side view of another film structure provided by an embodiment of the present application;

[0019] Figure 6 is a schematic structural diagram of another film provided by an embodiment of the present application;

[0020] Figure 7 is a side view of another film structure provided by an embodiment of the present application;

[0021] Figure 8 is a side view of another film structure provided by an embodiment of the present application;

[0022] Figure 9 is a flowchart of the preparation method of the film provided by an embodiment of the present application;

[0023] Figure 10 is a schematic structural diagram of the optoelectronic device provided by the present application.

[0024] Description of the Reference Numerals:

[0025] The first splicing unit 11; the second splicing unit 12; the third splicing unit 13; the fourth splicing unit 14; the fifth splicing unit 15; the sixth splicing unit 16;

[0026] The anode 10; the hole functional layer 30; the active layer 40; the electron functional layer 50; the cathode 20. Detailed Embodiments

[0027] The present application will be further described below in conjunction with specific embodiments.

[0028] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative efforts shall fall within the protection scope of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0029] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0030] In the present application, "and / or" describes the association relationship of associated objects and indicates that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, or B exists alone. Where A and B may be singular or plural.

[0031] In the present application, "at least one" means one or more, and "a plurality" means two or more. "At least one kind", "at least one item (piece) below" or similar expressions refer to any combination of these items, including any combination of single item (piece) or plural items (pieces). For example, "at least one item (piece) among a, b, or c", or, "at least one item (piece) among a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0032] In the present application, when forming another layer "on" a certain layer, the so-called "on" is a broad concept, which may mean that the formed another layer is adjacent to a certain layer, or there may be other spacer structure layers between another layer and a certain layer. For example, when forming a second electrode "on" the first charge carrier functional layer, the so-called "on" may mean that the formed second electrode is adjacent to the first charge carrier functional layer, or there may be other spacer structure layers between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0033] Various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of the present application; therefore, it should be considered that the described range description has specifically disclosed all possible sub-ranges and individual values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and individual numbers within that range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0034] Currently, a microcavity structure is often provided in optoelectronic devices to improve the light extraction efficiency of the optoelectronic devices through the microcavity effect. However, the existing microcavity structure results in a poor viewing angle range of the device. For example, Figures 1 - 2 as shown, the light intensity emitted along the thickness direction of the optoelectronic device is the strongest, while the brightness at other viewing angles decreases significantly, and the brightness is extremely uneven. Moreover, the wavelength difference between the light emitted at other viewing angles and the light at the normal viewing angle is too large, resulting in a large color difference and affecting the visual experience. The existing technologies using a single-layer film or simply stacking multiple-layer films only enhance the light extraction in the vertical direction, while the light extraction at other angles weakens.

[0035] The technical solution of the present application is as follows:

[0036] In a first aspect, please refer to the attached Figures 3 - 6 , an embodiment of the present application provides a film, including at least two splicing units, the splicing units are spliced through a splicing surface, and the material of any one of the splicing units includes a semiconductor material.

[0037] It should be noted that the film may include two or more splicing units, and any two adjacent splicing units are spliced through a splicing surface. In other words, there is at least one splicing surface in the film, and there may also be multiple splicing surfaces.

[0038] It should also be noted that the splicing of the splicing units into a film is seamless splicing, that is, the splicing units are arranged adjacent to each other to ensure the continuity of the conductivity of the film.

[0039] The thin film provided by the present application increases the refraction surface through the splicing surface, thereby having more refraction angles, which can improve the light emission intensity at angles other than the vertical direction and improve the viewing angle; multiple splicing units can be used as a resonant cavity structure to achieve the optical microcavity effect, improve the light emission efficiency of the thin film, and enhance the brightness; it can also achieve selective absorption of the emission wavelength, improve the color saturation and light emission uniformity; multiple splicing units can also improve the stability and reliability of the thin film, reduce the stress distribution, and improve the flexibility of the thin film; the structure of the splicing unit can also improve the heat conduction performance of the thin film, reduce the internal temperature distribution of the thin film, thereby reducing the dissipated heat and further improving the stability of the thin film.

[0040] In some embodiments, the structure of the thin film is a cube, such as a cuboid, etc.

[0041] Further, the length of the thin film is 100 μm to 150 μm, and for example, it can be 110 μm, 120 μm, 130 μm, 140 μm, etc.

[0042] The width of the thin film is 50 μm to 100 μm, and for example, it can be 60 μm, 70 μm, 80 μm, 90 μm, etc.

[0043] The thickness of the thin film is 10 nm to 40 nm, and for example, it can be 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, etc.

[0044] In some embodiments, the surface of the thin film is flat.

[0045] In some embodiments, the splicing surface is a plane.

[0046] In other embodiments, the splicing surface is a curved surface. It should be noted that the curved surface can be a concave curved surface or a convex curved surface.

[0047] It can be understood that in other embodiments, the splicing surface can also be an irregular surface. The irregular surface can be any combination of a plane and a curved surface. In other words, it can be a combination of multiple planes to form an irregular splicing surface, or a combination of multiple curved surfaces to form an irregular splicing surface, or a combination of multiple planes and multiple curved surfaces to form an irregular splicing surface.

[0048] In some embodiments, the angle between the tangent plane of at least one of the splicing surfaces and the thickness direction of the thin film is an acute angle. It should be noted that under certain conditions, there are infinitely many curves passing through a certain point M on the curved surface, and each curve has a tangent line at point M. Under certain conditions, these tangent lines lie in the same plane, and this plane is called the tangent plane of the curved surface at point M. For the planar splicing surface of the present application, the tangent plane of the planar splicing surface is the planar splicing surface itself. For the curved surface splicing surface of the present application, there are multiple tangent planes, and at least one tangent plane has an acute angle with the thickness direction of the thin film.

[0049] In this solution, among all the splicing surfaces, it is sufficient that the tangent plane of at least one splicing surface has an acute angle with the thickness direction of the thin film. Of course, it is also possible that the tangent planes of two or more splicing surfaces have acute angles with the thickness direction of the thin film. That is, the tangent plane of the splicing surface has an angle with the thickness direction of the thin film and is not a right angle to ensure the refraction of light.

[0050] In some embodiments, the splicing unit includes one or more of a prism, a pyramid, and a semi-cylinder.

[0051] Further, the prism includes one or more of a triangular prism, a quadrangular prism, a pseudo-triangular prism, and a pseudo-quadrangular prism.

[0052] The pyramid includes one or more of a triangular pyramid, a quadrangular pyramid, a pseudo-triangular pyramid, and a pseudo-quadrangular pyramid.

[0053] It should be noted that the splicing surfaces of the pseudo-triangular prism, the pseudo-quadrangular prism, the pseudo-triangular pyramid, the pseudo-quadrangular pyramid, and the semi-cylinder are curved surfaces. Exemplarily, the side surface of the pseudo-triangular pyramid is an irregular curved surface, that is, the splicing surface. The plane determined by the vertex and the side of the pseudo-triangular pyramid can form a triangular pyramid with other side surfaces and the bottom surface.

[0054] In some embodiments, please refer to Figure 3 , the thin film includes two first splicing units 11 spliced symmetrically up and down. The first splicing unit 11 is a triangular prism, and the bottom surface of the triangular prism is a right triangle. The two first splicing units 11 are spliced through the side surface of the triangular prism containing the hypotenuse of the right triangle.

[0055] Further, when the thin film includes the first splicing unit 11, the length of one right-angled side of the right triangle is equal to the thickness of the thin film, the length of the other right-angled side is equal to the length or width of the thin film, and the height of the triangular prism is equal to the width or length of the thin film.

[0056] In other words, the length of the other right-angled side can be equal to and corresponding to the length of the film. At this time, the height of the triangular prism is equal to and corresponding to the width of the film. Of course, the length of the other right-angled side can also be equal to and corresponding to the width of the film. At this time, the height of the triangular prism is equal to and corresponding to the length of the film.

[0057] In some other embodiments, please refer to Figure 4 and Figure 5 , the film includes two second splicing units 12 spliced up and down. The second splicing unit 12 is a quadrangular prism, and the bottom surface of the quadrangular prism is a right trapezoid. The two second splicing units 12 are spliced through the side surface of the quadrangular prism containing the inclined waist of the right trapezoid.

[0058] Furthermore, when the film includes the second splicing unit 12, the sum of the upper base length of one right trapezoid and the lower base length of the other right trapezoid is equal to the thickness of the film. The length of the vertical waist of the right trapezoid is equal to the length or width of the film, and the height of the quadrangular prism is equal to the width or length of the film.

[0059] In other words, the length of the vertical waist of the right trapezoid can be equal to and corresponding to the length of the film. At this time, the height of the quadrangular prism is equal to and corresponding to the width of the film. Of course, the length of the vertical waist of the right trapezoid can also be equal to and corresponding to the width of the film. At this time, the height of the quadrangular prism is equal to and corresponding to the length of the film.

[0060] It should be noted that the two second splicing units 12 can be the same or different. Specifically, when the two second splicing units 12 are the same, the upper base lengths of the right trapezoids in the two second splicing units 12 are the same, and the lower base lengths are the same. When the two second splicing units 12 are different, the upper base lengths of the right trapezoids in the two second splicing units 12 are different, and the lower base lengths are also different. But in both cases, the sum of the upper base length of one right trapezoid and the lower base length of the other right trapezoid is equal to the sum of the upper base length of the other right trapezoid and the lower base length of one right trapezoid.

[0061] In some embodiments, the upper base length of the right trapezoid is 3 nm to 5 nm, for example, it can be 3.5 nm, 4 nm, 4.5 nm, etc. The lower base length of the right trapezoid is 7 nm to 20 nm, for example, it can be 10 nm, 12 nm, 15 nm, etc.

[0062] It should be noted that the "up and down symmetric splicing" and the "up and down" in the "up and down splicing" both refer to the thickness direction of the film.

[0063] In some other embodiments, please refer to Figure 6, the thin film includes 4 sequentially spliced third splicing units 13 and 1 fourth splicing unit 14. The 4 third splicing units 13 are symmetrically arranged in pairs. The third splicing unit 13 is a first quadrangular pyramid. The first side surface of the first quadrangular pyramid is perpendicular to the bottom surface of the first quadrangular pyramid. The vertices of the 4 first quadrangular pyramids are in contact, the bottom surfaces form the side surface of the thin film, and the first side surfaces form the bottom surface of the thin film. Two adjacent third splicing units 13 are connected through the side surface adjacent to the first side surface. The 4 third splicing units 13 define a groove, and the fourth splicing unit 14 is a second quadrangular pyramid and fills the groove.

[0064] Further, when the thin film includes the third splicing unit 13 and the fourth splicing unit 14, the height of the second quadrangular pyramid is equal to the thickness of the thin film, and the height of the first quadrangular pyramid is equal to 1 / 2 of the length or width of the thin film. Specifically, the sum of the heights of the two symmetrically arranged first quadrangular pyramids is equal to the length of the thin film. The sum of the heights of the other two symmetrically arranged second quadrangular pyramids is equal to the width of the thin film.

[0065] Please refer to Figure 7 and Figure 8 , in some other embodiments, the thin film includes a fifth splicing unit 15 and a sixth splicing unit 16 that are spliced with each other. The splicing surface of the fifth splicing unit 15 close to the sixth splicing unit 16 has a curved surface depression, and the sixth splicing unit 16 has a curved surface protrusion and fills the curved surface depression. It can be understood that at this time, the sixth splicing unit can be a semi-cylindrical shape. It should be noted that there can be only one corresponding curved surface depression and one curved surface protrusion, or there can be multiple curved surface depressions and multiple curved surface protrusions. The above are partial structural implementation manners of the splicing unit. It can be understood that the number of the splicing units can also be 6, 8, etc.; the structure can also be a pentagonal prism, a hexagonal pyramid, etc. The number and structure can be combined according to needs. For example, 3 triangular prisms spliced up and down, and there is a splicing surface that forms an acute angle with the thickness direction of the thin film, that is, the refraction surface can be increased to improve the viewing angle.

[0066] In some embodiments, the semiconductor material includes one of a light-emitting semiconductor material, a P-type semiconductor material, and an N-type semiconductor material. In some embodiments, the light-emitting semiconductor material includes one or several of an organic light-emitting material and a quantum dot light-emitting material.

[0067] The organic light-emitting materials include one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium], diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF materials, polymers containing B-N covalent bonds, hybrid local charge transfer excited state materials, and exciplex luminescent materials.

[0068] The quantum dot light-emitting materials include one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0069] The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are each selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell of the core-shell structure quantum dots includes one or more layers. Among them, the II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; and the I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2.

[0070] Exemplarily, the core-shell structured quantum dots include one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0071] The perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2 + 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of the .

[0072] In some embodiments, the p-type semiconductor material includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose, and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides, wherein the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, V2O5, and wherein the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfides include one or more of CuS, MoS3, WS3, the metal selenides include one or more of MoSe3, WSe3, and the metal nitrides include p-type gallium nitride.

[0073] In some embodiments, the N-type semiconductor material includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

[0074] In a second aspect, please refer to Figure 9 and an embodiment of the present application provides a method for preparing a thin film, including the following steps:

[0075] S11. Provide a splicing unit;

[0076] S12. Set at least one more splicing unit on the splicing unit, and splice it with the previous splicing unit through a splicing surface. The material of any one of the splicing units includes a semiconductor material; a thin film is obtained.

[0077] The preparation method of any one of the splicing units includes conventional methods in the art, such as chemical vapor deposition, magnetron sputtering, or electron beam evaporation.

[0078] Exemplarily, the temperature of the chemical vapor deposition method is room temperature; the vacuum degree is 10 -5 Torr to 10 -3 Torr; the rate is 0.1 nm / s to 0.5 nm / s.

[0079] The temperature of the magnetron sputtering method is room temperature; the vacuum degree is 10 -4 Torr to 10 -3 Torr; the rate is 0.1 nm / s to 0.2 nm / s.

[0080] The temperature of the electron beam evaporation method is room temperature; the vacuum degree is 10 -7 Torr to 10 -5 Torr; the power is 10 kW to 100 kW; the voltage is 2 kV to 10 kV.

[0081] The wavelength of the ultraviolet treatment is 300 nm to 365 nm; the pulse width is 18 ns to 25 ns; the power is 2 W to 8 W; the frequency is 0.5 Hz to 1.5 Hz; and the time is 30 s to 200 s.

[0082] It should be noted that the specific parameters of the gas-phase deposition method and the magnetron sputtering method can be selected accordingly according to the material, and will not be elaborated here.

[0083] In some embodiments, during the preparation of any one of the splicing units, it further includes moving the previous splicing unit to prepare the splicing units of each structure. It can be understood that since the splicing surface is an inclined surface or a curved surface, the splicing unit at least contains one inclined surface or a curved surface. Therefore, when preparing each splicing unit, the substrate can be moved to make the splicing unit form an inclined surface or a curved surface.

[0084] In some embodiments, before preparing the subsequent splicing unit, it further includes rotating the previous splicing unit so that the subsequent splicing unit is spliced with the previous splicing unit.

[0085] The rotation angle can be arbitrarily selected according to needs. For example, when preparing Figure 2 the shown thin film, after preparing the first first splicing unit 11, the substrate can be rotated by 90°, and the second first splicing unit 11 can be prepared with the same parameters. Another example is that when preparing Figure 5 the shown thin film, after preparing the first third splicing unit 13, the substrate can be rotated by 90°, and the second third splicing unit 13 can be prepared with the same parameters; then rotated by 90° to prepare the third third splicing unit 13, and then rotated by 90° to prepare the fourth third splicing unit 13.

[0086] In some embodiments, after setting a plurality of the splicing units, it further includes ultraviolet treatment.

[0087] Furthermore, the wavelength of the ultraviolet treatment is 300 nm to 365 nm, for example, it can be 310 nm, 320 nm, 330 nm, 340 nm, 350 nm, 360 nm, etc.; the pulse width is 18 ns to 25 ns, for example, it can be 20 ns, 22 ns, etc.; the power is 2 W to 8 W, for example, it can be 4 W, 6 W, etc.; the frequency is 0.5 Hz to 1.5 Hz, for example, it can be 0.8 Hz, 1.2 Hz, 1.5 Hz, etc.; and the time is 30 s to 200 s, for example, it can be 50 s, 80 s, 100 s, 120 s, 150 s, 180 s, etc.

[0088] Thus, under the conditions of the ultraviolet treatment described above, the ultraviolet irradiation with high penetrability and high energy will optimize the interface state of each splicing unit, endowing it with excellent optical performance and good electrical performance while enhancing the performance of the thin film.

[0089] For a third aspect, please refer to Figure 10 , an optoelectronic device provided by an embodiment of the present application includes an anode 10, a functional layer, and a cathode 20 stacked in sequence; the functional layer includes the thin film described above, or includes a thin film prepared by the preparation method described above.

[0090] It should be noted that the thickness direction of the thin film, that is, the thickness direction of the optoelectronic device, is the direction from the anode 10 to the cathode 20.

[0091] In some embodiments, the functional layer includes a hole functional layer 30, an active layer 40, and an electron functional layer 50 arranged in sequence along the direction from the anode 10 to the cathode 20, and one or several of the hole functional layer 30, the active layer 40, and the electron functional layer 50 include the thin film described above.

[0092] In some embodiments, when the active layer 40 includes a light-emitting layer and the light-emitting layer includes the thin film described above, the semiconductor material is a light-emitting semiconductor material.

[0093] In some embodiments, when the hole functional layer 30 includes the thin film described above, the semiconductor material is a P-type semiconductor material.

[0094] In some embodiments, when the electron functional layer 50 includes the thin film described above, the semiconductor material is an N-type semiconductor material.

[0095] In some embodiments, the thickness range of the anode 10 and the cathode 20 can be 7 nm to 20 nm, for example, it can be 10 nm, 12 nm, 15 nm, 18 nm, etc.

[0096] The materials of the anode 10 and the cathode 20 respectively include but are not limited to doped metal oxide particle electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, metal single electrodes or alloy electrodes. The materials of the doped metal oxide particle electrodes may include but are not limited to one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), and aluminum-doped magnesium oxide (AMO). The composite electrode is a composite electrode with a metal sandwiched between doped or undoped transparent metal oxide particles, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, etc. Herein, " / " represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer, and an AZO layer stacked in sequence. The materials of the metal single electrodes may include but are not limited to one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba.

[0097] It can be understood that some functional layers that are conventionally used in optoelectronic devices and are helpful for improving the performance of optoelectronic devices may be additionally provided in the optoelectronic device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0098] It can be understood that the materials of each layer of the optoelectronic device can be adjusted according to the light emission requirements of the optoelectronic device.

[0099] For the optoelectronic device provided in this application, the functional layer uses the above-mentioned thin film, which has the following main functions:

[0100] Improve the light extraction efficiency: The splicing unit of the thin film can be used as the resonant cavity structure of the optoelectronic device to achieve the optical microcavity effect; by optimizing the splicing unit structure and material parameters, the thin film can improve the light extraction efficiency, thereby enhancing the light emission brightness of the optoelectronic device.

[0101] Increase the color saturation: The structure of the splicing unit can achieve selective absorption of the emission wavelength to obtain an optoelectronic device with higher color saturation.

[0102] Improve the device stability and reliability: The thin film can be used as a special encapsulation layer to reduce the sensitivity of the optoelectronic device to the external environment (such as moisture and oxygen), improve the stability and reliability of the optoelectronic device; it can also reduce the stress distribution in the encapsulation material and lower the mechanical stress of the optoelectronic device.

[0103] Achieving flexibility and bendability: The thin film has a certain degree of flexibility, which enables optoelectronic devices to be more easily bent and folded, thus providing the possibility for the development of bendable and foldable displays and lighting devices.

[0104] Reducing heat dissipation: The thin film can improve the thermal conductivity of optoelectronic devices, reduce the internal temperature distribution of optoelectronic devices, thereby reducing the heat dissipation of optoelectronic devices and further improving the operating stability of optoelectronic devices.

[0105] Fourthly, the present application also provides a display device, and the display device includes the above-mentioned optoelectronic device.

[0106] The display device can be any electronic product with a display function, and the electronic product includes but is not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0107] The technical solutions and technical effects of the present application will be described in detail below through specific embodiments and comparative examples. The following embodiments are only partial embodiments of the present application and do not specifically limit the present application.

[0108] Thin Film Embodiment 1

[0109] This thin film embodiment provides a thin film, and its structure is as Figure 3 shown. The preparation method includes:

[0110] Using chemical vapor deposition, deposit CdSe quantum dot material on a substrate, move the substrate, and form a first splicing unit in the shape of a triangular prism, where the starting thickness is 0 and the ending thickness is 12 nm;

[0111] Rotate the above substrate by 180°, and continue to deposit CdSe quantum dot material; then prepare another first splicing unit that is spliced with the above first splicing unit. The starting thickness of this first splicing unit is 0 and the ending thickness is 12 nm; a thin film is obtained.

[0112] Thin Film Embodiment 2

[0113] This thin film embodiment provides a thin film, and its structure is as Figure 4 shown. The preparation method includes:

[0114] Using chemical vapor deposition, deposit CdSe quantum dot material on a substrate, move the substrate, and form a second splicing unit in the shape of a quadrangular prism, where the starting thickness is 5 nm and the ending thickness is 12 nm;

[0115] Rotate the above substrate by 180°, and continue to deposit the CdSe quantum dot material; then prepare another second splicing unit spliced with the above second splicing unit, the starting thickness of this second splicing unit is 5 nm, and the ending thickness is 12 nm; obtain a thin film.

[0116] Thin film Example 3

[0117] This thin film example provides a thin film, the structure of which is as Figure 5 shown, and the preparation method includes:

[0118] Adopt chemical vapor deposition method to deposit CdSe quantum dot material on the substrate, move the substrate to form a second splicing unit in the shape of a quadrangular prism, where the starting thickness is 5 nm and the ending thickness is 12 nm;

[0119] Rotate the above substrate by 180°, and continue to deposit the CdSe quantum dot material; then prepare another second splicing unit spliced with the above second splicing unit, the starting thickness of this second splicing unit is 8 nm, and the ending thickness is 15 nm; obtain a thin film.

[0120] Thin film Example 4

[0121] This thin film example provides a thin film, the structure of which is as Figure 6 shown, and the preparation method includes:

[0122] Adopt chemical vapor deposition method to deposit CdSe quantum dot material on the substrate, move the substrate to form a third splicing unit in the shape of a first quadrangular pyramid, where the starting thickness is 0 nm and the ending thickness is 12 nm;

[0123] Rotate the above substrate by 90°, and continue to deposit the CdSe quantum dot material; then prepare a second third splicing unit spliced with the side surface of the above third splicing unit, the starting thickness of this third splicing unit is 0 nm, and the ending thickness is 12 nm;

[0124] Rotate the above substrate by 90° again, and continue to deposit the CdSe quantum dot material; then prepare a third third splicing unit spliced with the side surface of the above third splicing unit, the starting thickness of this third splicing unit is 0 nm, and the ending thickness is 12 nm;

[0125] Rotate the above substrate by 90° again, and continue to deposit the CdSe quantum dot material; then prepare a fourth third splicing unit spliced with the side surface of the above third splicing unit, the starting thickness of this third splicing unit is 0 nm, and the ending thickness is 12 nm;

[0126] The vertices of the four third splicing units touch each other to define a concave pit, and continue to deposit the CdSe quantum dot material to fill the concave pit to form a fourth splicing unit with the structure of a second quadrangular pyramid, and obtain a thin film.

[0127] Film Example 5

[0128] This film embodiment is basically the same as film embodiment 1, except that, after forming another first splicing unit, this film embodiment further includes ultraviolet irradiation treatment with a wavelength of 365nm, a pulse width of 22ns, a power of 5W, a frequency of 1.2Hz, and a time of 90s to obtain a film.

[0129] Film Examples 6 to 10

[0130] Thin film embodiments 6 to 10 are substantially the same as thin film embodiments 1 to 5, except that in thin film embodiments 6 to 10, the CdSe quantum dot materials in thin film embodiments 1 to 5 are replaced with ZnO inorganic particle materials, respectively.

[0131] Film Examples 11 to 15

[0132] Thin film embodiments 11 to 15 are substantially the same as thin film embodiments 1 to 5, except that in thin film embodiments 11 to 15, the CdSe quantum dot materials in thin film embodiments 1 to 5 are replaced with TFB semiconductor materials, respectively.

[0133] Film Examples 16-17

[0134] Film Examples 16 to 17 are substantially the same as Film Example 1, except that:

[0135] In the film example 16, Figure 7 preparing a splicing unit for splicing curved surfaces;

[0136] In the film example 17, reference Figure 8 Prepare a stitching unit for stitching multiple surfaces.

[0137] Film Examples 18-19

[0138] Thin film embodiments 18 to 19 are substantially the same as thin film embodiment 17, except that in thin film embodiments 18 to 19, the CdSe quantum dot material is replaced by ZnO inorganic particle material and TFB semiconductor material, respectively.

[0139] Film Comparative Example 1:

[0140] This film comparative example provides a film having a rectangular parallelepiped structure, and the preparation method includes:

[0141] CdSe quantum dots (20 mg / mL) were spin-coated at a rotation speed of 2000 r / min for 30 seconds, followed by heating at 80° C. for 30 minutes to obtain a thin film.

[0142] Film Comparative Examples 2-3:

[0143] Film Comparative Examples 2-3 are basically the same as Film Comparative Example 1, except that in Film Comparative Examples 2-3, CdSe quantum dots are replaced with ZnO and TFB, respectively.

[0144] Device Example 1

[0145] This device example provides an optoelectronic device, and its preparation method includes:

[0146] Spin-coat PEDOT:PSS on the ITO substrate at a rotation speed of 5000 r / min for 30 s, and then heat it at 150 °C for 15 min to form a hole injection layer;

[0147] Spin-coat TFB (8 mg / mL) at a rotation speed of 3000 r / min for 30 s, and then heat it at 120 °C for 10 min to form a hole transport layer;

[0148] Prepare the quantum dot light-emitting layer with reference to the method of Film Example 1;

[0149] Spin-coat ZnO (30 mg / mL) on the quantum dot light-emitting layer at a rotation speed of 3000 r / min for 30 s to form an electron transport layer;

[0150] By thermal evaporation, the vacuum degree is not higher than 3x10 -4 Pa, deposit Ag at a speed of 1 Å / s for 200 s to form a cathode with a thickness of 20 nm;

[0151] Encapsulate with epoxy resin to obtain the optoelectronic device.

[0152] Device Examples 2-15

[0153] Device Examples 2-15 are basically the same as Device Example 1, except that

[0154] In Device Examples 2-5, the quantum dot light-emitting layers are prepared with reference to Film Examples 2-5 respectively;

[0155] In Device Examples 6-10, the quantum dot light-emitting layers are prepared with reference to Film Comparative Example 1 respectively, and the electron transport layers are prepared with reference to Film Examples 6-10;

[0156] In Device Examples 11-15, the quantum dot light-emitting layers are prepared with reference to Film Comparative Example 1 respectively, and the hole transport layers are prepared with reference to Film Examples 11-15.

[0157] Device Examples 16-19

[0158] Device Examples 16-19 are basically the same as Device Example 1, except that

[0159] In Device Example 16, the electron transport layer is prepared with reference to Film Example 6;

[0160] In device example 17, a hole transport layer is prepared by referring to thin film example 11;

[0161] In device example 18, the quantum dot light-emitting layer is prepared by referring to thin film comparative example 1, the electron transport layer is prepared by referring to thin film example 6, and the hole transport layer is prepared by referring to thin film example 11;

[0162] In device example 19, the electron transport layer is prepared by referring to thin film example 6, and the hole transport layer is prepared by referring to thin film example 11.

[0163] Device Examples 20 to 24

[0164] Device Examples 20 to 24 are substantially the same as Device Example 1, except that:

[0165] In device embodiments 20-21, the quantum dot light-emitting layer is prepared by referring to thin film embodiments 16-17;

[0166] In device example 22, the quantum dot light-emitting layer is prepared by referring to thin film comparative example 1, and the electron transport layer is prepared by referring to thin film example 18;

[0167] In device example 23, the quantum dot light-emitting layer is prepared by referring to thin film comparative example 1, and the hole transport layer is prepared by referring to thin film example 19;

[0168] In device example 24, the electron transport layer is prepared by referring to thin film example 18, and the hole transport layer is prepared by referring to thin film example 19.

[0169] Device comparison ratio:

[0170] The device comparative example is basically the same as device example 1, except that the quantum dot light-emitting layer is prepared by referring to thin film comparative example 1 in the device comparative example.

[0171] The viewing angle performance (light output uniformity), service life (T95, T95@1000nit) and current efficiency (CE) of device embodiments 1-24 and the device comparison were tested. The specific results are shown in Table 1.

[0172] Among them, the viewing angle performance test includes testing the brightness of light emitted along the thickness direction of the optoelectronic device (L1, ±0°), the brightness of light emitted at an angle of 60° along the thickness direction of the optoelectronic device (L2, ±60°), and the ratio of the two L2 / L1.

[0173] The test method of current efficiency CE (cd / A) is: after the photoelectric device is electrically driven, the brightness is measured using a brightness meter, and the current efficiency is calculated by the brightness and current.

[0174] The test methods for the lifespan T95 and the lifespan T95@1000 nit are as follows: In CDA gas, under constant current drive, the time it takes for the brightness of the device to decay to a certain proportion of the maximum brightness is measured. The time when the brightness decays to 95% of the maximum brightness is defined as T95, and this lifespan is the measured lifespan. To shorten the lifespan test cycle, the device lifespan test is usually carried out by accelerating the device aging at high brightness, and the lifespan at low brightness is obtained by fitting through the decay fitting formula. For example, the lifespan at 1000 nit is denoted as T95@1000 nit, and the calculation formula is:

[0175]

[0176] where T95 L is the lifespan at low brightness, generally taking the lifespan at 1000 nit, and T95 H is the lifespan at high brightness, that is, the measured lifespan, and L H is the maximum brightness to which the device is accelerated, and L L is generally 1000 nit, A is the acceleration factor, taking 1.7. Among them, the constant current is 2 mA.

[0177] T95 represents the time it takes for the brightness of the device to decay from 100% to 95%. Under the same current, the longer the T95 time of the device, the better the performance of the device and the more excellent the stability.

[0178] T95@1000 represents the time it takes for the brightness to decay from 100% to 95% when the device is at a brightness of 1000 nit. This value is calculated from the values of brightness L and T95.

[0179] Table 1

[0180]

[0181]

[0182] As can be seen from Table 1:

[0183] From device examples 1 to 5 and device comparative examples, it can be seen that by adopting the light-emitting layer thin-film structure provided in this application, the viewing angle performance of the optoelectronic device can be effectively improved. The ratio of the light emitted from a 60° viewing angle to the light emitted from a 0° viewing angle has been significantly improved compared with the device comparative example, improving the light extraction uniformity of the optoelectronic device; and it also extends the service life of the optoelectronic device, and at the same time improves the current efficiency of the optoelectronic device through the microcavity effect; among them, when Figure 4 the thin-film structure is adopted, there are more splicing surfaces and more refraction angles, and the improvement effect on the performance of the optoelectronic device is the most obvious;

[0184] As can be seen from Device Examples 6 to 15 and Device Comparative Examples, applying the thin film structure provided by the present application to the carrier functional layer (hole functional layer and electron functional layer) can also effectively improve the viewing angle performance of optoelectronic devices; similar to Device Examples 1 to 5, when the carrier functional layer adopts Figure 4 the thin film structure, the optoelectronic device has relatively higher current efficiency, longer service life, and better viewing angle performance;

[0185] As can be seen from Device Examples 16 to 19 and Device Comparative Examples, when the thin film structure provided by the present application is applied to at least two of the light emitting layer, hole functional layer, and electron functional layer at the same time, compared with the device comparative example, the viewing angle performance, current efficiency, and service life of the optoelectronic device have been better improved, but there is not much difference from the case where only one functional layer adopts the thin film structure provided by the present application.

[0186] As can be seen from Device Examples 20 to 24 and Device Comparative Examples, when the splicing surface of the splicing unit is a curved surface, it can also effectively improve the viewing angle performance of optoelectronic devices, increase the current efficiency and service life of optoelectronic devices, and there is no significant difference in the performance between single-curved and multi-curved optoelectronic devices; when the quantum dot light emitting layer adopts the structure spliced by curved surface splicing units, the effect is slightly better than that of the structure where the electron functional layer and hole functional layer adopt splicing units.

[0187] The technical solutions provided by the embodiments of the present application have been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A film, characterized in that, It includes at least two splicing units, which are spliced through splicing surfaces, and the material of any one of the splicing units includes semiconductor material.

2. The thin film according to claim 1, wherein the surface of the thin film is flat; and / or the splicing surface is one or more of a plane and a curved surface; and / or the included angle between the tangent plane of at least one of the splicing surfaces and the thickness direction of the thin film is an acute angle; and / or the structure of the splicing unit includes one or more of a prism, a pyramid, and a semi-cylinder; the prism includes one or more of a triangular prism, a quadrangular prism, a pseudo-triangular prism, and a pseudo-quadrangular prism; the pyramid includes one or more of a triangular pyramid, a quadrangular pyramid, a pseudo-triangular pyramid, and a pseudo-quadrangular pyramid; the splicing surfaces of the pseudo-triangular prism, the pseudo-quadrangular prism, the pseudo-triangular pyramid, the pseudo-quadrangular pyramid, and the semi-cylinder are curved surfaces.

3. The thin film according to claim 1, wherein the semiconductor material includes one of a light-emitting semiconductor material, a P-type semiconductor material, and an N-type semiconductor material; the light-emitting semiconductor material includes one or more of an organic light-emitting material and a quantum dot light-emitting material; the organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium], diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, TADF material, a polymer containing B-N covalent bonds, a hybrid local charge transfer excited state material, and an exciplex light-emitting material. The quantum dot light-emitting material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials; the materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are respectively selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds, and the shell layer of the core-shell structure quantum dots includes one or more layers; wherein, the II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2;The core-shell structured quantum dots include one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs; + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of; and / or The P-type semiconductor material includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides. The metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, V2O5. Among them, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V. The metal sulfides include one or more of CuS, MoS3, WS3. The metal selenides include one or more of MoSe3, WSe3. The metal nitrides include P-type gallium nitride; and / or The N-type semiconductor material includes one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA group semiconductor material, a IIIA-VA group semiconductor material, and a IB-IIIA-VIA group semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor material includes one or more of InP and GaP. The IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS.

4. The thin film according to claim 2, wherein the thin film includes two first splicing units spliced symmetrically up and down. The first splicing unit is a triangular prism, the bottom surface of the triangular prism is a right triangle, and the two first splicing units are spliced through the side surface of the triangular prism containing the hypotenuse of the right triangle; or the thin film includes two second splicing units spliced up and down. The second splicing unit is a quadrangular prism, the bottom surface of the quadrangular prism is a right trapezoid, and the two second splicing units are spliced through the side surface of the quadrangular prism containing the oblique waist of the right trapezoid; or the thin film includes four third splicing units spliced in sequence and one fourth splicing unit. The four third splicing units are symmetrically arranged in pairs. The third splicing unit is a first quadrangular pyramid, the first side surface of the first quadrangular pyramid is perpendicular to the bottom surface of the first quadrangular pyramid. The vertices of the four first quadrangular pyramids are in contact, the bottom surfaces form the side surface of the thin film, and the first side surfaces form the bottom surface of the thin film. Adjacent two third splicing units are connected through the side surface adjacent to the first side surface. The four third splicing units define a groove, and the fourth splicing unit is a second quadrangular pyramid and fills the groove; or the thin film includes a fifth splicing unit and a sixth splicing unit spliced with each other. The splicing surface of the fifth splicing unit close to the sixth splicing unit has a curved surface depression, and the sixth splicing unit has a curved surface protrusion and fills the curved surface depression.

5. The thin film according to claim 4, wherein the length of the thin film is 100 μm to 150 μm; and / or the width of the thin film is 50 μm to 100 μm; and / or the thickness of the thin film is 10 nm to 40 nm; and / or When the film includes the first splicing unit, the length of one right-angled side of the right-angled triangle is equal to the thickness of the film, the length of the other right-angled side is equal to the length or width of the film, and the height of the triangular prism is equal to the width or length of the film; When the film includes the second splicing unit, the sum of the upper base length of one right-angled trapezoid and the lower base length of the other right-angled trapezoid is equal to the thickness of the film, the length of the vertical waist of the right-angled trapezoid is equal to the length or width of the film, and the height of the quadrangular prism is equal to the width or length of the film; the upper base lengths of the two right-angled trapezoids may be the same or different, and the lower base lengths may be the same or different; and / or When the film includes the third splicing unit and the fourth splicing unit, the height of the second quadrangular pyramid is equal to the thickness of the film, and the height of the first quadrangular pyramid is equal to 1 / 2 of the length or width of the film.

6. A method for preparing a thin film, characterized in that, Including: Providing a splicing unit; Providing at least one more splicing unit on the splicing unit, splicing with the previous splicing unit through a splicing surface, and the material of any splicing unit includes a semiconductor material; thus obtaining a film.

7. The preparation method according to claim 6, wherein the surface of the film is flat; and / or the splicing surface is a plane or a curved surface; and / or the included angle between the tangent plane of at least one splicing surface and the thickness direction of the film is an acute angle; and / or the structure of the splicing unit includes one or more of a prism and a pyramid; the prism includes one or more of a triangular prism, a quadrangular prism, a pseudo-triangular prism, and a pseudo-quadrangular prism; the pyramid includes one or more of a triangular pyramid, a quadrangular pyramid, a pseudo-triangular pyramid, and a pseudo-quadrangular pyramid; the splicing surfaces of the pseudo-triangular prism, the pseudo-quadrangular prism, the pseudo-triangular pyramid, and the pseudo-quadrangular pyramid are curved surfaces.

8. The preparation method according to claim 6, wherein the semiconductor material includes one of a light-emitting semiconductor material, a P-type semiconductor material, and an N-type semiconductor material; the light-emitting semiconductor material includes one or more of an organic light-emitting material and a quantum dot light-emitting material; the organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium], diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, TADF material, a polymer containing B-N covalent bonding, a hybrid local charge transfer excited state material, and an exciplex light-emitting material; The quantum dot luminescent material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials; the materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are respectively selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds, and the shell of the core-shell structure quantum dots includes one or more layers; wherein, the II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2;The quantum dots with core-shell structure include one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS; the perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs + ion, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge 2+ Yb 2+ Eu - one or more of them, and X is a halogen anion selected from - Cl - Br n-2 I + one or more of them; the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation selected from CH3(CH2) n NH3 2+ or [NH3(CH2) 2+ NH3] 2+ where n≥2, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge - Yb - Eu - one or more of them; and / or The P-type semiconductor material includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfide, metal selenide and metal nitride, wherein the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, V2O5, and wherein the doping element in the second doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, the metal nitride includes P-type gallium nitride; and / or The N-type semiconductor material includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

9. The preparation method according to claim 6, wherein during the preparation of any one of the splicing units, it further includes moving the previous splicing unit to prepare the splicing units of each structure; and / or before preparing the subsequent splicing unit, it further includes rotating the previous splicing unit so that the subsequent splicing unit is spliced with the previous splicing unit; the preparation method of any one of the splicing units includes chemical vapor deposition, magnetron sputtering, or electron beam evaporation; and / or after setting a plurality of the splicing units, it further includes ultraviolet treatment.

10. The preparation method according to claim 9, wherein The temperature of the chemical vapor deposition method is room temperature; the vacuum degree is 10 -5 Torr~10 -3 Torr; the rate is 0.1 nm / s~0.5 nm / s; and / or The temperature of the magnetron sputtering method is room temperature; the vacuum degree is 10 -4 Torr~10 -3 Torr; the rate is 0.1nm / s~0.2nm / s; and / or The temperature of the electron beam evaporation method is room temperature; the vacuum degree is 10 -7 Torr to 10 -5 Torr; the power is 10 kW to 100 kW; the voltage is 2 kV to 10 kV; and / or the wavelength of the ultraviolet treatment is 300 nm to 365 nm; the pulse width is 18 ns to 25 ns; the power is 2 W to 8 W; the frequency is 0.5 Hz to 1.5 Hz; and the time is 30 s to 200 s.

11. An optoelectronic device, characterized in that, It includes an anode, a functional layer, and a cathode stacked in sequence; the functional layer includes the thin film according to any one of claims 1 to 5, or includes the thin film prepared by the preparation method according to any one of claims 6 to 10.

12. The optoelectronic device according to claim 11, wherein The functional layer includes a hole functional layer, an active layer, and an electron functional layer arranged in sequence along the direction from the anode to the cathode. One or more of the hole functional layer, the active layer, and the electron functional layer include the thin film; the active layer includes a light-emitting layer. When the light-emitting layer includes the thin film, the semiconductor material is a light-emitting semiconductor material; and / or when the hole functional layer includes the thin film, the semiconductor material is a P-type semiconductor material; and / or when the electron functional layer includes the thin film, the semiconductor material is an N-type semiconductor material.

13. The optoelectronic device according to claim 11, characterized in that, The anode and the cathode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal element electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba.

14. A display device, characterized in that, The display device includes the optoelectronic device according to any one of claims 11 to 13.

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