Plasma processing apparatus

Abstract

A plasma processing apparatus (1) includes: a vacuum container (10) including a peripheral wall (10a) made of a dielectric material and accommodating a table on which an object to be processed (20) is disposed; an antenna (12) which is provided outside the vacuum container so as to be rotatable about the peripheral wall, and which generates a high-frequency magnetic field for generating plasma inside the vacuum container; and a mask (30) provided between the stage and the peripheral wall in the vacuum container and having a plurality of openings (30c) through which the high-frequency magnetic field passes.

Description

Technical Field

[0001] The present invention relates to a plasma processing apparatus that processes an object to be processed using plasma. Background Art

[0002] Conventionally, a technique for processing an object to be processed using plasma has been known. Regarding such a technique, for example, Patent Document 1 discloses a film stripping apparatus that irradiates a coating material (object to be processed) provided on a holder with an ion stream and strips (removes) a film from the coating material. In the film stripping apparatus described in Patent Document 1, the coating material is provided in an ion stream concentration portion where two or more ion streams overlap, and while the coating material is rotated, the ion stream is irradiated, thereby stripping the coating material.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: International Publication No. 2016 / 163278 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] However, in the film stripping apparatus described in Patent Document 1, when performing film stripping, a mechanism for rotating a plurality of ion sources (high-frequency magnetic field generation sources) and the coating material is required. In addition, since the ion stream is concentrated in the center of the vacuum chamber, there is a problem that the number of processes per unit time becomes small.

[0008] An object of an embodiment of the present invention is to improve the processing efficiency of a plasma processing apparatus without using a plurality of high-frequency magnetic field generation sources.

[0009] Technical Means for Solving the Problems

[0010] To solve the above problems, a plasma processing apparatus according to an embodiment of the present invention includes: a vacuum container including a peripheral wall made of a dielectric and housing a worktable on which an object to be processed is disposed inside; an antenna provided outside the vacuum container so as to be rotatable around the peripheral wall and generating a high-frequency magnetic field that generates plasma inside the vacuum container; and a metal cylinder disposed between the worktable and the peripheral wall inside the vacuum container and having a plurality of openings through which the high-frequency magnetic field passes.

[0011] Effects of the Invention

[0012] According to an embodiment of the present invention, the processing efficiency of a plasma processing apparatus can be improved without using a plurality of high-frequency magnetic field generation sources. Brief Description of the Drawings

[0013] Figure 1 ​is a partial cross-sectional perspective view showing the structure of the main part of the plasma processing apparatus according to Embodiment 1.

[0014] Figure 2 is a top view showing Figure 1 the structure of the main part of the plasma processing apparatus shown.

[0015] Figure 3 is a schematic diagram showing the structure of the first capacitor on the power supply side.

[0016] Figure 4 is a schematic diagram showing the structure of the second capacitor on the ground side.

[0017] Figure 5 is a partial cross-sectional perspective view showing the structure of the main part of the plasma processing apparatus according to Embodiment 2.

[0018] Figure 6 is a top view showing Figure 5 the structure of the main part of the plasma processing apparatus shown.

[0019] Figure 7 is a schematic diagram showing an example of the arrangement of the first mask and the second mask.

[0020] Figure 8 is a partial cross-sectional perspective view showing the structure of the main part of the plasma processing apparatus according to Embodiment 3.

[0021] Figure 9 is a partial cross-sectional perspective view showing the structure of the main part of the plasma processing apparatus according to Embodiment 4.

[0022] Figure 10 is a schematic diagram showing the structure of the third capacitor.

[0023] Figure 11 is a partial cross-sectional perspective view showing the structure of the main part of the plasma processing apparatus according to Embodiment 5. DETAILED DESCRIPTION

[0024] [Embodiment 1]

[0025] Hereinafter, an embodiment of one aspect of the present invention (hereinafter, also referred to as "the present embodiment") will be described based on the drawings. In the present embodiment, the plasma processing apparatus of the present invention is applied to an etching apparatus as an example. In addition, the following description is an example of the plasma processing apparatus of the present invention, and the technical scope of the present invention is not limited to the illustrated examples.

[0026] Figure 1 ​​​​​​​​​​This is a partial cross-sectional perspective view showing the structure of the main part of the plasma processing apparatus 1 of the present embodiment. Figure 2 This is a top view showing the structure of the main part of the plasma processing apparatus 1 of the present embodiment.

[0027] [Structure of Plasma Processing Apparatus 1]

[0028] The plasma processing apparatus 1 includes a vacuum chamber 10, an antenna 12, a worktable 21, and a mask 30 (metal cylinder).

[0029] (Vacuum Chamber 10)

[0030] The vacuum chamber 10 is a container that houses the worktable 21 on which the object to be processed 20 is placed. Inside the vacuum chamber 10, vacuum evacuation is performed using a vacuum pump (not shown), and a gas is introduced. The vacuum chamber 10 includes a cylindrical peripheral wall 10a formed of a curved surface, a circular upper wall 10b that closes the upper side of the peripheral wall 10a, and a circular bottom wall 10c that closes the lower side of the peripheral wall 10a. The peripheral wall 10a extends from the upper wall 10b to the bottom wall 10c. The peripheral wall 10a is made of a dielectric. In addition, the upper wall 10b and the bottom wall 10c are made of metal and are electrically grounded.

[0031] (Worktable 21)

[0032] The worktable 21 is a stage on which a plurality of objects to be processed 20 are placed. The worktable 21 is housed inside the vacuum chamber 10. The worktable 21 has a circular plate shape with a circular shape in plan view. A plurality of holders 23 for holding the object to be processed 20 are provided on the worktable 21. The plurality of holders 23 are arranged at regular intervals in the circumferential direction at the outer edge portion of the worktable 21.

[0033] The worktable 21 is electrically connected to a pulse power supply 22. The object to be processed 20 is electrically connected to the worktable 21 via the holder 23, and the bias voltage applied by the pulse power supply 22 is applied to the object to be processed 20 via the worktable 21 and the holder 23.

[0034] Examples of the object to be processed 20 include rotary tools such as drills, end mills, and reamers, and molds. The object to be processed 20 forms a film containing an inorganic substance on the surface of a metal member, for example, to improve the surface hardness.

[0035] (Antenna 12)

[0036] The antenna 12 is connected to the high-frequency power supply 11, generating a high-frequency magnetic field that produces plasma inside the vacuum container 10. The antenna 12 is provided outside the vacuum container 10. One end of the antenna 12 is connected to the first capacitor 13, and the other end is connected to the second capacitor 14. The current output by the high-frequency power supply 11 is input to the antenna 12 via the first capacitor 13 and then flows into the grounded second capacitor 14.

[0037] The antenna 12 is a bent hollow tube that turns back near the bottom wall 10c and bends from the outer periphery of the vacuum container 10 toward the center of the vacuum container 10 in the space above the upper wall 10b. In addition, both ends of the antenna 12 bend again at the center of the vacuum container 10, with one end entering the first capacitor 13 and the other end entering the second capacitor 14. That is, the antenna 12 is arranged to travel back and forth once from the upper part to the lower part of the vacuum container 10 along the peripheral wall 10a.

[0038] The high-frequency power supply 11 can cause a high-frequency current to flow through the antenna 12 via a matching circuit. By the high-frequency current flowing through the antenna 12, a high-frequency magnetic field is generated around the antenna 12, and at least the inside of the vacuum container 10 generates a high-frequency magnetic field via the peripheral wall 10a.

[0039] The antenna 12 can rotate around the peripheral wall 10a with the rotation axis C that coincides with the central axis of the cylindrical peripheral wall 10a as the center. For example, a motor (not shown) is connected to the antenna 12, and by driving the motor, the antenna 12 rotates with the rotation axis C as the center. Therefore, the first capacitor 13 and the second capacitor 14 are configured to allow a high-frequency current to flow through the rotating antenna 12.

[0040] Figure 3 It is a schematic diagram showing the structure of the first capacitor 13 on the power supply side. Figure 4 It is a schematic diagram showing the structure of the second capacitor 14 on the ground side. As Figure 3 shown, the first capacitor 13 is provided with a cylindrical terminal 13a that is connected to the high-frequency power supply 11 and has one end closed, and one end of the antenna 12 is located on the rotation axis C. The space between the terminal 13a and one end of the antenna 12 is filled with a dielectric 13c and is rotatably sealed in a manner that does not allow the dielectric 13c to leak.

[0041] Similarly, as Figure 4 shown, the second capacitor 14 is configured such that the other end of the antenna 12 can rotate around the rotation axis C, and the grounded terminal 14b is arranged in a ring shape at an interval from the other end of the antenna 12. The space between the other end of the antenna 12 and the terminal 14b is filled with a dielectric 14c and is rotatably sealed in a manner that does not allow the dielectric 14c to leak.

[0042] Thus, the first capacitor 13 and the second capacitor 14 are structured as follows: the dielectric is filled in the electrical connection part with the antenna 12, and even when the antenna 12 rotates, a specified capacitive coupling is achieved. In addition, as the dielectric 13c and the dielectric 14c, a refrigerant such as pure water can be used. As the pure water, highly resistive water with a resistivity of, for example, 1 MΩ·cm or more can be used. The range of the resistivity of the pure water is appropriately changed according to the usage conditions of the plasma processing apparatus 1. By using pure water as the dielectric, the pure water functions as a refrigerant, and the antenna 12, the first capacitor 13, and the second capacitor 14 can be cooled. Therefore, by using pure water as the dielectric, the device structure can be simplified.

[0043] In addition, by using pure water as the dielectric, the following advantages are obtained.

[0044] (1) The relative dielectric constant of pure water is very large, and the withstand voltage is large. Therefore, it is easy to exhibit the performance of two electrical components, namely, mechanical parts and capacitors.

[0045] (2) It can be applied to the rotatable part of the antenna 12 without frictional resistance.

[0046] (3) The environmental load is low.

[0047] However, substances other than pure water can also be used as the dielectric. As the dielectric, alumina, glass, etc. can also be cited.

[0048] By rotating the antenna 12, a high-frequency magnetic field that moves along the peripheral wall 10a can be generated inside the vacuum container 10. Since the high-frequency magnetic field is applied inside the vacuum container 10, plasma P is generated at a position corresponding to the high-frequency magnetic field inside the vacuum container 10. Since the density of the plasma P depends on the magnetic field of the high-frequency magnetic field, it varies according to the distance from the antenna 12 (the distance from the part facing the antenna 12 to the peripheral wall). In Figure 2 the example of, the plasma P is generated in the shaded part. As Figure 2 shown, the plasma P is not generated in the entire interior of the vacuum container 10. Only within a range where the distance from the antenna 12 converges to a certain extent, plasma P with a density effective for plasma processing can be obtained.

[0049] (Mask 30)

[0050] The mask 30 is a metal cylinder disposed inside the vacuum chamber 10, near the peripheral wall 10a between the worktable 21 and the peripheral wall 10a. Plasma P is generated inside the vacuum chamber 10, and the film on the surface of the object to be processed 20 is removed by the plasma. The removed film diffuses into the interior of the vacuum chamber 10. If the film that has diffused into the interior of the vacuum chamber 10 (hereinafter sometimes referred to as foreign matter) adheres to the inner surface 10d of the peripheral wall 10a, the generated plasma P weakens due to the induced current flowing through the foreign matter. Therefore, in order to prevent foreign matter from adhering to the inner surface 10d of the peripheral wall 10a, the mask 30 is disposed between the worktable 21 and the peripheral wall 10a.

[0051] The mask 30 is grounded and includes a plurality of annular metal ring portions 30a arranged at intervals in the height direction (direction of the rotation axis C) of the vacuum chamber 10, and a conduction portion 30b that connects adjacent metal ring portions 30a to make the metal ring portions 30a electrically conductive. The mask 30 has a structure in which a plurality of metal ring portions 30a are connected by the conduction portion 30b.

[0052] Each of the plurality of metal ring portions 30a is arranged in a concentric circle with the peripheral wall 10a in a plan view. Each of the plurality of conduction portions 30b is provided between adjacent metal ring portions 30a and is arranged in a line along the height direction (direction of the rotation axis C) of the vacuum chamber 10. That is, the plurality of conduction portions 30b are arranged at positions that overlap each other when the vacuum chamber 10 is viewed from above.

[0053] When the vacuum chamber 10 is viewed from the side, an opening 30c is formed between adjacent metal ring portions 30a through which the high-frequency magnetic field generated by the antenna 12 passes. The high-frequency magnetic field generated by the antenna 12 is introduced into the inside of the mask 30 via the peripheral wall 10a and the opening 30c, and plasma P is generated around the object to be processed 20 inside the vacuum chamber 10. In addition, the opening 30c can be, for example, in the shape of a slit extending along the circumferential direction of the peripheral wall 10a.

[0054] In addition, the mask 30 is not limited to the structure in which the metal ring portions 30a are connected by the conduction portion 30b. For example, the mask 30 may have a plurality of holes formed on the circumferential surface of a cylindrical metal cylinder like a perforated metal.

[0055] [Operation of the plasma processing apparatus 1]

[0056] As described above, in the plasma processing apparatus 1, the antenna 12 can rotate around the peripheral wall 10a with the rotation axis C as the center. As the antenna 12 rotates, the position of the plasma P also rotates and moves with the rotation axis C as the center. Therefore, the object to be processed 20 held by the holder 23 at the outer edge portion of the worktable 21 is sequentially subjected to plasma processing to remove the coating formed on the surface of the object to be processed 20.

[0057] Since the object to be processed 20 is connected to the pulse power supply 22 via the workbench 21 and the fixture 23, a bias voltage generated by the pulse power supply 22 is applied thereto. By adjusting the bias voltage, the energy of ions in the plasma P incident on the object to be processed 20 can be controlled, and efficient film removal can be performed.

[0058] During the film removal process, due to the action of the plasma P, electrons enter the object to be processed 20 and a current flows, so the object to be processed 20 is heated. In the plasma processing apparatus 1, since the plasma P moves, during the period when the plasma processing is not performed on the object to be processed 20 by the plasma P, the object to be processed 20 is not heated and is cooled by a cooling mechanism described later. That is, the plasma processing and cooling of the object to be processed 20 are repeated. Therefore, it is possible to prevent the object to be processed 20 from becoming too hot, and at the same time, film removal can be performed by plasma processing. Here, cooling the object to be processed 20 is to prevent the situation where if the object to be processed 20 is heated and the temperature becomes too high, it will become fragile and easily damaged.

[0059] In addition, in order to forcibly cool the object to be processed 20, a cooling mechanism (not shown) can be provided on the workbench 21. The cooling mechanism can be, for example, a mechanism for introducing a refrigerant into the interior of the workbench 21 for cooling. In the plasma processing apparatus 1, the workbench 21 does not include a rotation mechanism and is fixed relative to the vacuum chamber 10. Therefore, compared with the structure in which the workbench 21 includes a rotation mechanism, it is easier to provide the cooling mechanism on the workbench 21.

[0060] Thus, the plasma processing apparatus 1 according to the first embodiment includes: a vacuum chamber 10 including a peripheral wall 10a made of a dielectric and housing the workbench 21 on which the object to be processed 20 is disposed therein; an antenna 12 provided outside the vacuum chamber 10 so as to be rotatable around the peripheral wall 10a and generating a high-frequency magnetic field that generates a plasma P inside the vacuum chamber 10; and a mask 30 provided between the workbench 21 and the peripheral wall 10a inside the vacuum chamber 10 and having a plurality of openings 30c through which the high-frequency magnetic field passes.

[0061] In the plasma processing apparatus 1, since the antenna 12 can rotate around the vacuum chamber 10, the position of the plasma P moves as the antenna 12 rotates. Therefore, according to the plasma processing apparatus 1, the processing efficiency of the plasma processing apparatus 1 can be improved without using a plurality of high-frequency magnetic field generation sources.

[0062] In addition, in the plasma processing apparatus 1, since there is no need to provide a rotation mechanism on the workbench 21, it is easy to provide the cooling mechanism on the workbench 21. Furthermore, since the processing using the plasma P is performed intermittently, the object to be processed 20 is less likely to become too hot, and breakage caused by the weakening of the object to be processed 20 can be prevented.

[0063] 〔Embodiment 2〕

[0064] Another embodiment of the present invention will be described below. In addition, for the sake of convenience of explanation, components having the same functions as those described in the above embodiment are given the same reference numerals, and their descriptions will not be repeated.

[0065] Figure 5 is a partial cross-sectional perspective view showing the structure of the main part of the plasma processing apparatus 2 according to Embodiment 2. Figure 6 is a top view showing the structure of the main part of the plasma processing apparatus 2 according to Embodiment 2. Figure 7 is a schematic view showing an arrangement example of the first mask 31 (first metal cylinder) and the second mask 32 (second metal cylinder).

[0066] The main difference between the plasma processing apparatus 2 and the plasma processing apparatus 1 of the above embodiment is that it includes two masks, namely, a first mask 31 (first metal cylinder) and a second mask 32 (second metal cylinder).

[0067] As Figures 5 to 7 shown, when the vacuum chamber 10 is observed from the side, the first mask 31 has a plurality of first openings 31c. The first mask 31 has the same structure as the mask 30 of the above embodiment. In addition, when the vacuum chamber 10 is observed from the side, the second mask 32 has a plurality of second openings 32c. The diameters of the first mask 31 and the second mask 32 are different, and the diameter of the second mask 32 is smaller than that of the first mask 31. The first mask 31 is disposed along the inner surface 10d of the peripheral wall 10a, and the second mask 32 is disposed inside the first mask 31, that is, at a position closer to the table 21 than the first mask 31. In addition, the first mask 31 and the second mask 32 are separately disposed so as to form a radial gap G therebetween. Both the first mask 31 and the second mask 32 are grounded.

[0068] Among the first mask 31 and the second mask 32, the height positions of the first openings 31c and the second openings 32c are different from each other. That is, when the vacuum chamber 10 is observed from the side, the metal ring portion 32a of the second mask 32 is disposed at the position of the first openings 31c of the first mask 31, and the second openings 32c of the second mask 32 are covered by the metal ring portion 32a of the first mask 31.

[0069] In the plasma processing apparatus 2, the high frequency magnetic field generated by the antenna 12 is introduced into the inner side of the second mask 32 via the peripheral wall 10a, the first opening 31c, the gap G, and the second opening 32c, so that plasma P is generated inside the vacuum container 10. In addition, in the plasma processing apparatus 2, in addition to the first mask 31, the second mask 32 is also included, so that foreign matter can be more effectively reduced from being attached to the inner surface 10d of the peripheral wall 10a.

[0070] [Implementation method 3]

[0071] Another embodiment of the present invention will be described below. In addition, for the sake of convenience, the same reference numerals are attached to components having the same functions as those described in the above embodiment, and the description thereof will not be repeated.

[0072] Figure 8 1 is a partially cutaway perspective view showing the structure of the main part of the plasma processing apparatus 3 of the present embodiment. The plasma processing apparatus 3 is mainly different from the plasma processing apparatus 1 of the above-described embodiment in that a mask 33 is included instead of the mask 30 .

[0073] Regarding the mask 33, a plurality of metal rings 30a are arranged in the height direction of the vacuum container 10, and the adjacent metal rings 30a are connected to each other by the conductive parts 30b. At this time, the conductive parts 30b are staggered in the circumferential direction of the metal rings 30a so as not to overlap each other when the vacuum container 10 is viewed from above. The conductive parts 30b are arranged at equal intervals at a certain interval of, for example, interval D. By setting the interval D to be 15 mm or more, the reverse current flowing along the direction of the antenna through the conductive parts 30b and across the metal rings 30a can be reduced, and the reduction of the high-frequency magnetic field for generating plasma can be suppressed.

[0074] Therefore, since the conductive portion 30 b is not disposed biasedly at a specific location, a high-frequency magnetic field can be uniformly generated inside the vacuum container 10 , and uniform film removal can be performed using uniform plasma P.

[0075] [Implementation method 4]

[0076] Another embodiment of the present invention will be described below. In addition, for the sake of convenience, the same reference numerals are attached to components having the same functions as those described in the above embodiment, and the description thereof will not be repeated.

[0077] Figure 9 1 is a partially cutaway perspective view showing the structure of the main part of the plasma processing apparatus 4 according to Embodiment 4. In Embodiment 4, the upper wall 10 b is a metal upper wall 15 connected to the ground potential. In addition, the antenna 12 is connected to the third capacitor 16 instead of the second capacitor 14 .

[0078] Figure 10 It is a schematic diagram showing the structure of the third capacitor 16. The third capacitor 16 is arranged in a circular shape on the upper wall 15 and is composed of the other end of the antenna 12 and the dielectric body 16c. The dielectric body 16c is located between and in contact with the other end of the antenna 12 and the upper wall 15. That is, the third capacitor 16 is a capacitor with the other end of the antenna 12 and the upper wall 15 as the electrodes.

[0079] In Embodiment 4, since the other end of the antenna 12 can be grounded only by being connected to the upper wall 15 via the third capacitor 16, the wiring process is easy. In addition, by using pure water as the dielectric of the antenna 12, the first capacitor 13, and the third capacitor 16, pure water can be used as a refrigerant to cool the antenna 12, the first capacitor 13, and the third capacitor 16.

[0080] 〔Embodiment 5〕

[0081] Another embodiment of the present invention will be described below. In addition, for ease of explanation, components having the same functions as those described in the above embodiments are given the same reference numerals, and their descriptions will not be repeated.

[0082] Figure 11 It is a partial cross-sectional perspective view showing the structure of the main part of the plasma processing apparatus 5 of Embodiment 5. In the plasma processing apparatus 5, the holders 23 are provided in multiple stages in the height direction of the vacuum chamber 10 instead of one stage. In addition to the lower-stage holder 23 in contact with the worktable 21, the upper-stage holder 23 is also provided via the legs 24 extending in the height direction of the vacuum chamber 10 from the worktable 21.

[0083] By providing the holders 23 for holding the object to be processed 20 on the worktable 21 in multiple stages in this way, the number of objects to be processed 20 that can be processed at one time increases, and the plasma processing can be performed more efficiently.

[0084] 〔Summary〕

[0085] The plasma processing apparatus according to Aspect 1 of the present invention includes: a vacuum chamber including a peripheral wall made of a dielectric and housing a worktable for arranging an object to be processed therein; an antenna provided outside the vacuum chamber so as to be rotatable around the peripheral wall and generating a high-frequency magnetic field for generating plasma inside the vacuum chamber; and a metal cylinder provided between the worktable and the peripheral wall inside the vacuum chamber and having a plurality of openings for allowing the high-frequency magnetic field to pass through.

[0086] According to the above structure, by only rotating the antenna disposed outside the vacuum container, a high-frequency magnetic field can be generated inside the vacuum container, causing the plasma to be generated inside the vacuum container. Therefore, the processing efficiency of plasma processing the object to be processed can be improved. In addition, the object to be processed is not always subjected to plasma processing, but is processed intermittently, so that the object to be processed can be prevented from becoming high temperature.

[0087] In the plasma processing apparatus according to the second embodiment of the present invention, based on the first embodiment, it is possible that the metal cylinder includes a plurality of annular metal ring portions arranged at intervals in the height direction of the vacuum container, and a conduction portion that connects the adjacent metal ring portions to make the metal ring portions conduct, and the opening portion is formed between the adjacent metal ring portions.

[0088] According to the above structure, an opening portion can be provided between adjacent metal ring portions, and the metal cylinder can be formed with a simple structure.

[0089] In the plasma processing apparatus according to the third embodiment of the present invention, based on the second embodiment, it is possible that the metal cylinder includes a first metal cylinder and a second metal cylinder disposed inside the first metal cylinder, and when observing the vacuum container from the side, the metal ring portion of the second metal cylinder is disposed at the position of the opening portion of the first metal cylinder.

[0090] According to the above structure, when observing the vacuum container from the side, the first metal cylinder and the second metal cylinder are filled without gaps, so the foreign matter removed by the plasma does not adhere to the peripheral wall again, but adheres to the first metal cylinder or the second metal cylinder again, and the deterioration of the dielectric of the peripheral wall can be prevented.

[0091] In the plasma processing apparatus according to the fourth embodiment of the present invention, based on the second or third embodiment, each of the conduction portions may be arranged in a staggered manner in the circumferential direction of the metal ring portion so as not to overlap each other when looking down at the vacuum container.

[0092] According to the above structure, the conduction portions of the metal cylinder are dispersed and not concentrated in a specific part, so the high-frequency magnetic field is not biased and is dispersed. Therefore, the density of the plasma is generated uniformly regardless of the rotation of the antenna, and uniform film removal independent of the position of the object to be processed can be achieved.

[0093] In the plasma processing apparatus according to the fifth embodiment of the present invention, based on any one of the first to fourth embodiments, it may further include a plurality of holders for holding the object to be processed on the workbench, and the plurality of holders are provided in multiple stages in the height direction of the vacuum container.

[0094] According to the above structure, the number of objects to be processed that can be removed at one time increases, so the film can be removed efficiently.

[0095] The plasma processing apparatus according to Embodiment 6 of the present invention is based on any one of Embodiments 1 to 5, and it is possible that the upper wall of the vacuum container is connected to the ground potential, and one end of the antenna is connected to the upper wall via a dielectric body.

[0096] According to the above structure, the antenna can be grounded via the upper wall, so the antenna can be easily arranged.

[0097] The plasma processing apparatus according to Embodiment 7 of the present invention is based on Embodiment 6, and the dielectric body can be pure water.

[0098] According to the above structure, pure water can be used as the dielectric body, so the antenna can be efficiently cooled.

[0099] 〔Supplementary Notes〕

[0100] The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope shown in the claims. Embodiments obtained by appropriately combining technical means separately disclosed in different embodiments are also included in the technical scope of the present invention. Furthermore, by combining the technical means separately disclosed in each embodiment, new technical features can be formed.

[0101] For example, two or more of the structures of Embodiments 1 to 5 can be adopted simultaneously. In such a case, the effects brought by the multiple adopted structures can be obtained simultaneously.

[0102] Explanation of Reference Numerals

[0103] 1, 2, 3, 4, 5: Plasma processing apparatus

[0104] 10: Vacuum container

[0105] 10a: Peripheral wall

[0106] 10b, 15: Upper wall

[0107] 10c: Bottom wall

[0108] 10d: Inner surface

[0109] 11: High-frequency power supply

[0110] 12: Antenna

[0111] 13: First capacitor

[0112] 14: Second capacitor

[0113] 16: Third capacitor

[0114] 20: Object to be processed

[0115] 21: Workbench

[0116] 22: Pulse power supply

[0117] 23: Fixator

[0118] 30, 33: Mask (metal cylinder)

[0119] 31: First mask (first metal cylinder)

[0120] 32: Second mask (second metal cylinder)

[0121] 30a, 32a: Metal ring part

[0122] 30b: Conductive part

[0123] 30c: Opening part

[0124] 31c: First opening part

[0125] 32c: Second opening part

Claims

1. A plasma processing apparatus, comprising: A vacuum container, including a peripheral wall made of a dielectric, and accommodating a worktable for disposing an object to be processed therein; An antenna, provided outside the vacuum container so as to be rotatable around the peripheral wall, and generating a high-frequency magnetic field for generating plasma inside the vacuum container; And A metal cylinder, disposed between the worktable and the peripheral wall inside the vacuum container, and having a plurality of openings through which the high-frequency magnetic field passes.

2. The plasma processing apparatus according to claim 1, wherein, The metal cylinder includes: a ring-shaped metal ring portion, with a plurality of them arranged at intervals in the height direction of the vacuum container; and a conduction portion, connecting the adjacent metal ring portions and making them conduct with each other, The opening is formed between the adjacent metal ring portions.

3. The plasma processing apparatus according to claim 2, wherein, The metal cylinder includes a first metal cylinder and a second metal cylinder disposed inside the first metal cylinder, When observing the vacuum container from the side, the metal ring portion of the second metal cylinder is disposed at the position of the opening of the first metal cylinder.

4. The plasma processing apparatus according to claim 2, wherein, Each of the conduction portions is arranged in a staggered manner in the circumferential direction of the metal ring portion so as not to overlap each other when looking down at the vacuum container.

5. The plasma processing apparatus according to claim 1, further including a plurality of holders for holding the object to be processed on the worktable, The plurality of holders are provided in multiple stages in the height direction of the vacuum container.

6. The plasma processing apparatus according to claim 1, wherein, The upper wall of the vacuum container is connected to the ground potential, One end of the antenna is connected to the upper wall via a dielectric.

7. The plasma processing apparatus according to claim 6, wherein, The dielectric is pure water.

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