Miniature electronic component transfer equipment

Abstract

The invention provides micro electronic component transfer equipment. The micro electronic component transfer equipment comprises a back plate carrying table, a substrate carrying table, a peptizing laser source and a welding laser source, the backboard carrying platform is used for carrying a backboard. The substrate carrying table is used for carrying a substrate. The substrate carrying table and the back plate carrying table are oppositely arranged. The peptizing laser source is arranged on the side, away from the substrate carrying table, of the back plate carrying table. The dispergation laser source is suitable for emitting dispergation laser towards the direction of the substrate carrying table. The welding laser source is arranged on the side, away from the back plate carrying table, of the substrate carrying table. The welding laser source is suitable for emitting welding laser towards the back plate carrying table. The micro electronic component transfer equipment is suitable for transferring micro electronic components on a substrate to a back plate.

Description

Technical Field

[0001] The present invention relates to a transfer device, and more particularly to a transfer device for microelectronic components. Background Art

[0002] In recent years, in the case where the manufacturing cost of organic light-emitting diode (OLED) displays is relatively high and their service life cannot compete with that of current mainstream displays, micro light-emitting diode displays (Micro LED Displays) have gradually attracted the investment attention of major technology companies. In addition to the advantages of low power consumption and long material service life, micro light-emitting diode displays also have excellent optical performance, such as high color saturation, fast response speed, and high contrast.

[0003] On the other hand, in order to achieve lower production costs and greater product design margins, the manufacturing process of micro light-emitting diode displays mostly adopts the method of die transfer (e.g., mass transfer technology). And how to improve the quality and / or yield of die transfer is indeed a research topic. Summary of the Invention

[0004] The present invention is directed to a transfer device for microelectronic components, which has better process quality and / or yield in application.

[0005] According to an embodiment of the present invention, the transfer device for microelectronic components includes a backplane stage, a substrate stage, a debonding laser source, and a welding laser source. The backplane stage is used to carry a backplane. The substrate stage is used to carry a substrate. The substrate stage is disposed opposite to the backplane stage. The debonding laser source is disposed on a side of the backplane stage away from the substrate stage. The debonding laser source is adapted to emit debonding laser towards the substrate stage. The welding laser source is disposed on a side of the substrate stage away from the backplane stage. The welding laser source is adapted to emit welding laser towards the backplane stage. The transfer device for microelectronic components is adapted to transfer microelectronic components located on the substrate to the backplane.

[0006] Based on the above, when performing the transfer process of microelectronic components by the transfer device for microelectronic components of the present invention, due to the corresponding configuration of the debonding laser source and the welding laser source therein, the transfer process can have better process quality and / or yield. Brief Description of the Drawings

[0007] Figure 1 is a partial perspective view of a transfer device for microelectronic components according to an embodiment of the present invention;

[0008] Figure 2APartial side view schematic diagram of a microelectronic component transfer device and a corresponding transfer object according to an embodiment of the present invention;

[0009] Figure 2B Partial bottom view schematic diagram of a microelectronic component transfer device and a corresponding transfer object according to an embodiment of the present invention;

[0010] Figure 3A Partial side view schematic diagram of a microelectronic component transfer device and a corresponding transfer object according to an embodiment of the present invention;

[0011] Figure 3B Partial bottom view schematic diagram of a microelectronic component transfer device and a corresponding transfer object according to an embodiment of the present invention;

[0012] Figure 4A and Figure 4B Partial side view schematic diagram of a microelectronic component transfer device and a corresponding transfer object according to an embodiment of the present invention;

[0013] Figure 5A Partial side view schematic diagram of a microelectronic component transfer device and a corresponding transferred object according to an embodiment of the present invention;

[0014] Figure 5B Partial bottom view schematic diagram of a microelectronic component transfer device and a corresponding transferred object according to an embodiment of the present invention;

[0015] Figure 6A Partial side view schematic diagram of a microelectronic component transfer device and a corresponding transferred object according to an embodiment of the present invention;

[0016] Figure 6B Partial bottom view schematic diagram of a microelectronic component transfer device and a corresponding transferred object according to an embodiment of the present invention;

[0017] Figures 7A to 7C Partial side view schematic diagram of microelectronic component transfer by a microelectronic component transfer device according to an embodiment of the present invention;

[0018] Figures 8A to 8C Partial side view schematic diagram of microelectronic component transfer by a microelectronic component transfer device according to an embodiment of the present invention;

[0019] Figures 9A to 9B Partial side view schematic diagram of microelectronic component transfer by a microelectronic component transfer device according to an embodiment of the present invention;

[0020] Figures 10A to 10BIt is a partial side view schematic diagram of transferring a microelectronic component by a microelectronic component transfer device according to an embodiment of the present invention.

[0021] Description of reference numerals:

[0022] 100: Microelectronic component transfer device;

[0023] 149: Platform;

[0024] 140: Welding laser source;

[0025] 141: Welding laser;

[0026] 170: Light guiding element;

[0027] 139: Two-dimensional translation device;

[0028] 130, 230, 330: Substrate carrier;

[0029] 333: Hollow structure;

[0030] 30: Substrate;

[0031] 35: Adhesive layer;

[0032] 50, 51, 52, 53, 54, 55, 56, 57: Microelectronic components;

[0033] 60: Conductive joint;

[0034] 15: Metal trace;

[0035] 10: Backplane;

[0036] 110, 510, 610: Backplane carrier;

[0037] 119: Two-dimensional translation device;

[0038] 613: Hollow structure;

[0039] 121: Debonding laser;

[0040] 120: Debonding laser source;

[0041] 129: Platform. Detailed implementation manners

[0042] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. However, the present invention may be embodied in various different forms and should not be limited to the embodiments described herein. The dimensions of some of the elements, layers, or regions in the drawings are enlarged for clarity. Whenever possible, the same reference numerals are used in the drawings and the description to denote the same or similar parts, and the following paragraphs will not repeat them one by one. In addition, the directional terms mentioned in the embodiments, such as: up, down, top, or bottom, etc., are only with reference to the directions of the attached drawings. Therefore, unless otherwise specifically stated, the directional terms used are for illustration and not for limiting the present invention. And, in order to clearly show the directional relationship between different drawings, in some of the drawings, the corresponding directions are exemplarily represented by the Cartesian coordinate system (i.e., the XYZ rectangular coordinate system), but the present invention is not limited thereto.

[0043] Figure 1 is a partial perspective view of a microelectronic component transfer device according to an embodiment of the present invention.

[0044] Please refer to Figure 1 , the microelectronic component transfer device 100 includes a backplane stage 110, a substrate stage 130, a debonding laser source 120, and a welding laser source 140. The backplane stage 110 is used to carry the backplane 10 (marked in subsequent other drawings). The substrate stage 130 is disposed opposite to or corresponding to the backplane stage 110. The substrate stage 130 is used to carry the substrate 30 (marked in subsequent other drawings). The debonding laser source 120 is disposed on a side of the backplane stage 110 away from the substrate stage 130. The debonding laser source 120 can emit a debonding laser 121 towards the substrate stage 130. The welding laser source 140 is disposed on a side of the substrate stage 130 away from the backplane stage 110. The welding laser source 140 can emit a welding laser 141 towards the backplane stage 110. And, through the microelectronic component transfer device 100, at least one microelectronic component 50 (marked in Figures 2A to 4B or Figures 7A to 10B ) originally located on the substrate 30 can be transferred to the backplane 10. The process of transferring the microelectronic component 50 originally located on the substrate 30 to the backplane 10 through the microelectronic component transfer device 100 will be described in detail later.

[0045] The backplane stage 110 can be disposed on a corresponding two-dimensional translation device 119, and the two-dimensional translation device 119 can include or be connected to a corresponding movable member (such as, but not limited to, a motor, a roller, a ball, a gear, a toothed rail, a toothed belt, a belt, etc.). The substrate stage 130 can be disposed on a corresponding two-dimensional translation device 139, and the two-dimensional translation device 139 can include or be connected to a corresponding movable member. The debonding laser source 120 can be disposed on a corresponding platform 129, and the platform 129 can include or be connected to a corresponding movable member. The welding laser source 140 can be disposed on a corresponding platform 149, and the platform 149 can include or be connected to a corresponding movable member. The aforementioned backplane stage 110, substrate stage 130, platform 129, and / or platform 149 can be signal-connected to a control unit (not shown). The control unit can include corresponding hardware and / or software. In this way, the backplane stage 110, substrate stage 130, debonding laser source 120, and / or welding laser source 140 can be moved (such as moving in the X direction, Y direction, Z direction, a direction parallel to the XY plane, a direction parallel to the YZ plane, and / or a direction parallel to the XZ plane) and / or rotated (such as rotating clockwise or counterclockwise along an axis) in corresponding directions through the control unit. For example, the backplane stage 110 and the substrate stage 130 can be driven by two-dimensional translation devices parallel to each other respectively to change the relative positions of the backplane stage 110 and the substrate stage 130 with respect to the debonding laser source 120 and the welding laser source 140. For example, the debonding laser source 120 and the welding laser source 140 can be driven by two-dimensional translation devices respectively and can move on a plane (which can be a virtual plane) parallel to the substrate 30 and the backplane 10. In addition, the debonding laser source 120 and / or the welding laser source 140 can also be signal-connected to the control unit. The debonding laser source 120 and / or the welding laser source 140 can be controlled by the control unit to perform corresponding operations (including but not limited to: causing corresponding light beams to be emitted).

[0046] In one embodiment, the debonding laser source 120 is adapted to emit laser light in the ultraviolet (UV) light region. Ultraviolet light is more suitable for decomposing the corresponding polymer. The laser light in the ultraviolet light region is, for example, an excimer (such as KrF) laser with a wavelength of about 248 nanometers, a diode-pumped solid-state laser with a wavelength of about 266 nanometers, or a diode-pumped solid-state laser with a wavelength of about 355 nanometers. In one embodiment, the pulse repetition rate of the debonding laser source 120 is about 1 MHz, and the pulse width of the debonding laser source 120 is about 1 microsecond (μs). In one embodiment, the pulse repetition rate of the debonding laser source 120 is about 1 GHz, and the pulse width of the debonding laser source 120 is about 1 nanosecond (ns). In one embodiment, the transmittance of the laser light emitted by the debonding laser source 120 (such as the debonding laser 121 described below) to the backplane stage 110 can be higher than or approximately equal to 60%; or, higher than or approximately equal to 80%; or, higher than or approximately equal to 90%.

[0047] In one embodiment, the welding laser source 140 is adapted to emit laser light in the infrared (IR) light region. Infrared light is more suitable for being absorbed by the metal material to generate corresponding thermal energy. The laser light in the infrared light region is, for example, a Nd:YAG laser with a wavelength of about 1064 nanometers (nm), an Er:YAG laser with a wavelength of about 2936 nanometers (nm), or an AlGaAs laser with a wavelength of about 905 nanometers (nm). In one embodiment, in order to reduce the accumulation of excessive heat, the pulse width of the welding laser source 140 is short, for example, at the picosecond (ps) or femtosecond (fs) level. In one embodiment, the single-pulse output power of the welding laser source 140 is about 1 mJ / cm 2 to 100 mJ / cm 2 ². In one embodiment, the transmittance of the laser light emitted by the welding laser source 140 (such as the welding laser 141 described below) to the substrate stage 130 can be higher than or approximately equal to 60%; or, higher than or approximately equal to 80%; or, higher than or approximately equal to 90%.

[0048] Figure 2A FIG. 11 is a partial side view schematic diagram of a microelectronic component transfer device and a corresponding transfer object according to an embodiment of the present invention. Figure 2B FIG. 12 is a partial bottom view schematic diagram of a microelectronic component transfer device and a corresponding transfer object according to an embodiment of the present invention. For example, Figure 2A it may be a side view schematic diagram corresponding to the A-A' cross-section line in Figure 2B FIG. 11.

[0049] Please refer to Figure 2A and Figure 2B, the substrate stage 230 (a type of substrate stage 130) may include corresponding clamping members, fastening members, and / or clamping parts to be adapted to carry the corresponding substrate 30. The substrate 30 may include, for example, a glass substrate, a polymer substrate, or a polymer film (such as: ultraviolet tape (UV tape) or blue tape), but the present invention is not limited thereto.

[0050] One side of the substrate 30 facing the backplane 10 has an adhesive layer 35. The adhesive layer 35 can temporarily fix the microelectronic components 50 on the substrate 30 (below in the drawings). The adhesive layer 35 can reduce adhesion or decompose by heating and / or corresponding light beams (such as: the debonding laser 121), so that the microelectronic components 50 with reduced adhesion force and the substrate 30 can be separated from each other. The material of the adhesive layer 35 is a polymer more suitable for being decomposed by ultraviolet light. For example, it may include light to heat conversion (LTHC) release materials, thermally degradable release materials, hot melt release materials, or cold brittle release materials, but the present invention is not limited thereto. In an embodiment, the material of the adhesive layer 35 may include corresponding organic materials (such as: benzocyclobutene, phenol formaldehyde resin, epoxy resin, polyisoprene rubber, or a combination of the above) or inorganic materials (such as: silicon oxide, silicon nitride, silicon oxynitride, or a combination of the above).

[0051] The microelectronic components 50 may include light-emitting grains (such as: micro light-emitting diodes (μLED); but not limited), or integrated circuits (ICs), but the present invention is not limited thereto. Additionally, for the sake of simplicity or clarity, not all of the microelectronic components 50 are labeled in the drawings.

[0052] In an embodiment, one side of the microelectronic component 50 facing the backplane 10 may have a conductive bonding member 60 (such as: solder ball, but not limited thereto) to be adapted to, in subsequent steps, connect the microelectronic component 50 to an appropriate location on the backplane 10 (such as: Figure 5A or Figure 6AIt is joined to the corresponding metal trace 15) of the middle backplane 10. In an embodiment not shown, a conductive joint (which may be the same as or similar to the conductive joint 60) may be disposed on the side of the backplane 10 facing the microelectronic component 50. Additionally, for the sake of brevity or clarity, not all of the conductive joints 60 are marked one by one in the drawings, and the conductive joints 60 are omitted from showing in some of the drawings (such as the subsequent drawings). In some embodiments, the conductive joint 60 is an electrode of the microelectronic component 50, used to provide an electrical connection between the microelectronic component 50 and the metal trace 15.

[0053] It should be noted that the present invention does not limit the plurality of microelectronic components 50 temporarily fixed on the substrate 30 to be the same or different. For example, the plurality of microelectronic components 50 may all be light-emitting grains. For example, the light-emitting grains are red light-emitting grains, the light-emitting grains are green light-emitting grains, and the light-emitting grains are blue light-emitting grains.

[0054] Figure 3A It is a partial side view schematic diagram of a microelectronic component transfer device and a corresponding transfer object according to an embodiment of the present invention. Figure 3B It is a partial bottom view schematic diagram of a microelectronic component transfer device and a corresponding transfer object according to an embodiment of the present invention. For example, Figure 3A It may correspond to Figure 3B The side view schematic diagram on the B-B' section line in

[0055] Please refer to Figure 3A and Figure 3B , the substrate stage 330 (a type of the substrate stage 130) may include corresponding clamping members, fastening members, and / or clamping parts to be suitable for carrying the corresponding substrate 30. In an embodiment, the substrate stage 330 has a corresponding hollow structure 333. The hollow structure 333 may correspond to the irradiation area of the laser emitted by the laser source (such as the welding laser 141 emitted by the welding laser source 140) to be suitable for performing the corresponding microelectronic component 50 transfer step. The number, size, and / or shape of the hollow structure 333 may be adjusted according to the design requirements and are not limited in the present invention. In some embodiments, the hollow structure 333 can reduce the weight of the substrate stage 330.

[0056] Figure 4A and Figure 4B It is a partial side view schematic diagram of a microelectronic component transfer device and a corresponding transfer object according to an embodiment of the present invention.

[0057] In one embodiment, the laser source (e.g., the debonding laser source 120 and / or the welding laser source 140) can change or adjust the optical path and / or the corresponding emission direction of the laser (e.g., the debonding laser 121 and / or the welding laser 141) through an appropriate optical guide device 170. The optical guide device 170 can include a galvo, a prism, a reflector, an optical fiber, an optical tube, or a combination thereof, but the present invention is not limited thereto.

[0058] It is worth noting that the optical path and / or the corresponding emission direction of the laser can be adjusted or integrated by the methods described in one or more of the above embodiments. For example, the corresponding laser source (such as the debonding laser source 120 and / or the welding laser source 140) can be roughly moved or rotated to an appropriate position (which can be called rough alignment) through the movable parts of the carrier (such as the backplane carrier 110 and / or the substrate carrier 130); then, the laser (such as the debonding laser 121 and / or the welding laser 141) can be irradiated to a more precise position (which can be called fine alignment) through the appropriate light-guiding element 170.

[0059] by Figure 4A and Figure 4B For example, since the size of the microelectronic component 50 is relatively small (e.g., it can be at the millimeter (mm) level; or even the micrometer (μm) level), the welding laser 141 emitted by the welding laser source 140 can be irradiated to the corresponding microelectronic component 50 through an appropriate light-guiding element 170 (e.g., a galvanometer); or, it can be adjusted between multiple microelectronic components 50 that are close in distance.

[0060] It is worth noting that in Figure 4A and Figure 4B The welding laser source 140 and the corresponding welding laser 141 are used as examples, and the debonding laser source 120 and the corresponding debonding laser 121 can also be set in a similar manner, which will not be described in detail. Figure 4A and Figure 4B The laser source direction and / or the corresponding light path are shown for exemplary purposes only and are not limited to the present invention.

[0061] Figure 5A It is a partial side view schematic diagram of a microelectronic component transfer device and a corresponding transferred object according to an embodiment of the present invention. Figure 5Bis a partial bottom view schematic diagram of a microelectronic component transfer device and a corresponding object to be transferred according to an embodiment of the present invention. For example, Figure 5A may be a side view schematic diagram corresponding to the Figure 5B C-C' cross-section line in

[0062] Please refer to Figure 5A and Figure 5B , the backplane stage 510 (a type of the backplane stage 110) may include corresponding clamping members, fastening members, and / or clamping parts to be suitable for carrying the corresponding backplane 10. The backplane 10 may include, for example, an intermediate substrate in the transfer process or a display screen in manufacturing, but the present invention is not limited thereto. One side of the backplane 10 facing the substrate 30 has metal traces 15. The metal traces 15 can be used to receive the microelectronic components 50. It should be noted that in Figure 5A and Figure 5B , the metal traces 15 may be schematically shown. In an exemplary application, the metal traces 15 may have corresponding layout patterns to respectively provide driving signals for a plurality of transferred microelectronic components 50.

[0063] Figure 6A is a partial side view schematic diagram of a microelectronic component transfer device and a corresponding object to be transferred according to an embodiment of the present invention. Figure 6B is a partial bottom view schematic diagram of a microelectronic component transfer device and a corresponding object to be transferred according to an embodiment of the present invention. For example, Figure 6A may be a side view schematic diagram corresponding to the Figure 6B D-D' cross-section line in

[0064] Please refer to Figure 6A and Figure 6B , the backplane stage 610 (a type of the backplane stage 110) may include corresponding clamping members, fastening members, and / or clamping parts to be suitable for carrying the corresponding backplane 10. In one embodiment, the backplane stage 110 has a corresponding hollow structure 613. The hollow structure 613 may correspond to the irradiation area of the laser emitted by the laser source (such as the debonding laser 121 emitted by the debonding laser source 120) to be suitable for performing the corresponding microelectronic component 50 transfer step. The number, size, and / or shape of the hollow structure 613 may be adjusted according to the design requirements and are not limited in the present invention. In some embodiments, the hollow structure 613 may reduce the weight of the substrate stage 330.

[0065] [Application of Microelectronic Component Transfer Device]

[0066] The following will give an exemplary description of the process in which the microelectronic component 50 originally located on the substrate 30 is transferred to the backplane 10 by the microelectronic component transfer device 100. It should be noted, however, that the application of the microelectronic component transfer device 100 is not limited to the subsequent description. In addition, for the sake of clarity or conciseness, some components (such as some components of the microelectronic component transfer device 100) are omitted or schematically shown in the drawings.

[0067] Figures 7A to 7C It is a partial side view schematic diagram of transferring a microelectronic component by a microelectronic component transfer device according to an embodiment of the present invention.

[0068] Please refer to Figure 7A , and in a suitable manner, the microelectronic component 51 (one of the microelectronic components 50) temporarily fixed on the substrate 30 can be made to correspond to the corresponding metal trace 15 on the backplane 10. For example, the microelectronic component 51 is temporarily fixed on the surface of the substrate 30 facing the backplane 10 by the adhesive layer 35.

[0069] Please continue to refer to Figure 7A , and the debonding laser source 120 emits a debonding laser 121 from one side of the backplane 10 towards the substrate stage 130. After passing through the backplane 10, the debonding laser 121 irradiates a part of the adhesive layer 35 on the substrate 30. The debonding laser 121 can be focused on a part of the adhesive layer 35 on the substrate 30 through a suitable method or component. The irradiated part of the adhesive layer 35 corresponds to the microelectronic component 51.

[0070] Please refer to Figures 7A to 7B , the adhesive force of the irradiated part of the adhesive layer 35 by the debonding laser 121 is reduced or decomposed, so that the microelectronic component 51 and the substrate 30 can be separated from each other. And, for example, by the way of gravity, the separated microelectronic component 51 can fall onto the corresponding metal trace 15 on the backplane 10.

[0071] Please refer to Figures 7B to 7C, after the microelectronic component 51 lands on the corresponding metal trace 15 on the backplane 10, a welding laser 141 emitted by a welding laser source 140 from one side of the substrate stage 130 towards the backplane stage 110 is made to pass through the substrate 30 and then irradiate the microelectronic component 51 or the conductive bonding member 60 disposed between the microelectronic component 51 and the metal trace 15. The welding laser 141 can be focused on the microelectronic component 51 or the conductive bonding member 60 on the backplane 10 by an appropriate means or element. In this way, the microelectronic component 51 can be fixed to the backplane 10 by welding, and can be electrically connected to the corresponding metal trace 15. In some embodiments, the welding laser 141 is only focused on the conductive bonding member 60 and the metal trace 15, which can reduce the possibility of damage to the microelectronic component 51 caused by the heat energy or high temperature of the welding laser 141.

[0072] In addition, the welding laser 141 emitted by the welding laser source 140 is basically irradiated directly on the corresponding conductive bonding member 60 and / or the metal trace 15 in a manner that does not penetrate the backplane 10. In this way, the area and / or temperature of the metal trace 15 being heated can be reduced, and the influence of excess waste heat on the process quality and / or yield can be reduced.

[0073] In one embodiment, the debonding laser source 120 and the welding laser source 140 are relatively arranged. In one embodiment, for the transferred microelectronic component 51, the welding laser 141 and the debonding laser 121 are in opposite directions but are basically coaxial / coaxial.

[0074] Other microelectronic components 52 temporarily fixed to the substrate 30 (the ones different from the microelectronic component 51 among the microelectronic components 50, not marked one by one) can also be transferred in the same or similar manner as described above, which will not be elaborated here. It should be noted that the present invention does not limit the transfer sequence of the microelectronic components 50 temporarily fixed to the substrate 30.

[0075] Figures 8A to 8C is a partial side view schematic diagram of transferring microelectronic components by a microelectronic component transfer device according to an embodiment of the present invention.

[0076] Please refer to Figure 8A , multiple microelectronic components 53 (a part of the microelectronic components 50) temporarily fixed to the substrate 30 can be made to correspond to the corresponding metal traces 15 on the backplane 10 respectively by an appropriate means first.

[0077] Please continue to refer to Figure 8A, the debonding laser source 120 emits a debonding laser 121 towards the substrate stage 130. The debonding laser 121 can be focused and irradiated onto a part of the adhesive layer 35 on the substrate 30 through an appropriate method or component. The irradiated part of the adhesive layer 35 corresponds to a plurality of microelectronic components 53. That is to say, the light spot formed after focusing the debonding laser 121 can correspond to the area of a plurality of microelectronic components 53.

[0078] Please refer to Figures 8A to 8B , the part of the adhesive layer 35 irradiated by the debonding laser 121 reduces adhesion or decomposes, so that the plurality of microelectronic components 53 and the substrate 30 can be separated from each other. And, for example, by means of gravity, the separated plurality of microelectronic components 53 can respectively fall onto the corresponding metal traces 15 on the backplane 10.

[0079] Please refer to Figures 8B to 8C , after the plurality of microelectronic components 53 fall onto the corresponding metal traces 15 on the backplane 10, the soldering laser source 140 emits a soldering laser 141 towards the backplane stage 110. The soldering laser 141 can be focused and irradiated onto the microelectronic components 53 on the backplane 10 through an appropriate method or component. In this way, the microelectronic components 53 can be fixed on the backplane 10 by soldering and can be electrically connected to the corresponding metal traces 15. In some embodiments, the light spot formed after focusing the debonding laser 121 corresponds to the area of a plurality of microelectronic components 53, while the light spot formed after focusing the soldering laser 141 corresponds to the area of a single microelectronic component 53, which means that the light spot formed after focusing the debonding laser 121 is larger than the light spot formed after focusing the soldering laser 141.

[0080] In one embodiment, different microelectronic components 53 can be soldered sequentially by an appropriate method. For example, the light spot formed after focusing the debonding laser 121 can correspond to the area of a single microelectronic component 53, and each microelectronic component 53 can be soldered sequentially or non-simultaneously.

[0081] Other microelectronic components 54 temporarily fixed on the substrate 30 (the microelectronic components 50 other than the microelectronic component 54 are not marked one by one) can also be transferred in the same or similar manner as described above, which will not be elaborated here.

[0082] Figures 9A to 9B is a partial side view schematic diagram of transferring microelectronic components by a microelectronic component transfer device according to an embodiment of the present invention.

[0083] Please refer to Figure 9A, the substrate stage 130 and the backplane stage 110 can be brought close to each other in a suitable manner, and the microelectronic components 50 temporarily fixed on the substrate 30 are brought close to or even in contact with the corresponding metal traces 15 on the backplane 10. It should be noted that the microelectronic components 50 to be transferred at this time are still temporarily fixed on the substrate 30.

[0084] Please refer to Figures 9A to 9B , in a manner the same as or similar to the foregoing, the debonding laser 121 is focused on irradiating a part of the adhesive layer 35 on the substrate 30, and the welding laser 141 is focused on irradiating the microelectronic component 55 (one of the microelectronic components 50) on the backplane 10. In this way, the corresponding microelectronic component 55 and the substrate 30 can be separated from each other, and the microelectronic component 55 can be fixed on the backplane 10. It should be noted that the present invention does not limit the energization timing of the debonding laser 121 and the welding laser 141. For example, the energization timing of the debonding laser 121 and the energization timing of the welding laser 141 can overlap, so as to improve the efficiency of the microelectronic component transfer device 100.

[0085] The other microelectronic components 56 (the ones different from the microelectronic component 55 among the microelectronic components 50, not marked one by one) temporarily fixed on the substrate 30 can also be transferred in a manner the same as or similar to the foregoing, which will not be elaborated herein.

[0086] Figures 10A to 10B is a partial side view schematic diagram of transferring microelectronic components by a microelectronic component transfer device according to an embodiment of the present invention. For example, Figures 10A to 10B can be the step following Figure 8B afterwards.

[0087] Please refer to Figure 8B and Figure 10A , after the separated multiple microelectronic components 53 respectively fall on the corresponding metal traces 15 on the backplane 10 (as shown in Figure 8B ), in a suitable manner, the debonding laser source 120 and the substrate stage 130 can be made not to overlap other areas of the multiple microelectronic components 53 (as shown in Figure 10A ). For example, the debonding laser source 120 and the substrate stage 130 can be moved on a plane parallel to the substrate 30 and the backplane 10; and / or, the welding laser source 140 and the backplane stage 110 can be moved on a plane parallel to the substrate 30 and the backplane 10.

[0088] Please refer to Figure 10A and Figure 10B , after the debonding laser source 120 and the substrate stage 130 are made not to overlap the multiple microelectronic components 53 (as shown in Figure 10AAs shown, the welding laser 141 emitted by the welding laser source 140 toward the backplane stage 110 can fix the microelectronic component 53 to the backplane 10 by welding and can be electrically connected to the corresponding metal trace 15.

[0089] Please refer to Figure 10A and Figure 10B , after the debonding laser source 120 and the substrate stage 130 do not overlap with the plurality of microelectronic components 53 (as shown in Figure 10A ), the debonding laser 121 can be emitted by the debonding laser source 120 toward the substrate stage 130 in the same or similar manner as described above (as shown in Figures 8A to 8B ) to separate the plurality of microelectronic components 57 (another part of the microelectronic component 50 different from the microelectronic component 53) from the substrate 30.

[0090] It should be noted that the enabling timings of the debonding laser 121 and the welding laser 141 are not limited in Figure 10B . For example, the enabling timings of the debonding laser 121 and the welding laser 141 can overlap, thus improving the efficiency of the microelectronic component transfer device 100.

[0091] In summary, when performing the transfer process of microelectronic components by the microelectronic component transfer device of the present invention, due to the corresponding configuration of the debonding laser source and the welding laser source therein, the transfer process can have better process quality and / or yield.

[0092] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A microelectronic component transfer device, characterized in that, Including: A backplane stage for carrying the backplane; A substrate stage for carrying the substrate, and the substrate stage is disposed opposite to the backplane stage; A debonding laser source disposed on a side of the backplane stage away from the substrate stage and emitting debonding laser in the direction of the substrate stage; and A welding laser source disposed on a side of the substrate stage away from the backplane stage and emitting welding laser in the direction of the backplane stage for transferring the microelectronic components located on the substrate to the backplane.

2. The microelectronic component transfer device according to claim 1, wherein, Wherein the wavelength of the debonding laser source is less than the wavelength of the welding laser source, and the pulse width of the debonding laser source is greater than the pulse width of the welding laser source.

3. The microelectronic component transfer device according to claim 1, characterized in that, Wherein an adhesive layer is provided on a surface of the substrate facing the backplane for temporarily fixing the microelectronic components.

4. The microelectronic component transfer device according to claim 3, characterized in that, Wherein the debonding laser emitted by the debonding laser source in the direction of the substrate stage is focused on the adhesive layer on the substrate to separate the microelectronic components from the substrate.

5. The microelectronic component transfer device according to claim 1, characterized in that, Wherein a metal trace is provided on a surface of the backplane facing the substrate for receiving the microelectronic components.

6. The microelectronic component transfer device according to claim 5, wherein, Wherein the welding laser emitted by the welding laser source in the direction of the backplane stage is focused on the microelectronic components to weld the microelectronic components to the metal trace.

7. The microelectronic component transfer device according to claim 5, characterized in that, Wherein the microelectronic components have conductive joints, the conductive joints are disposed on a side of the microelectronic components facing the backplane, and the welding laser emitted by the welding laser source in the direction of the backplane stage is focused on the conductive joints to weld the microelectronic components to the metal trace.

8. The microelectronic component transfer device according to claim 1, wherein, Wherein the backplane stage has a hollow structure corresponding to the irradiation area of the debonding laser.

9. The microelectronic component transfer device according to claim 1, characterized in that, Wherein the substrate stage has a hollow structure corresponding to the irradiation area of the welding laser.

10. The microelectronic component transfer device according to claim 1, wherein, Wherein the spot formed after focusing the debonding laser is larger than the spot formed after focusing the welding laser.

11. The microelectronic component transfer device according to claim 1, characterized in that, Wherein the backplane stage and the substrate stage are respectively driven by two-dimensional translation devices parallel to each other to change the relative positions of the backplane stage and the substrate stage with respect to the debonding laser source and the welding laser source.

12. The microelectronic component transfer device according to claim 1, wherein Wherein the debonding laser source and the welding laser source are respectively driven by two-dimensional translation devices to move in a plane parallel to the substrate and the backplane.

13. The microelectronic component transfer device according to claim 1, characterized in that, Wherein the debonding laser source and the welding laser source respectively change the emission directions of the debonding laser and the welding laser by light guiding elements.

Images