A method and system for controlling etching rate of laser double-sided etching of quartz crystal

Abstract

The present invention relates to the technical field of laser double-sided etching, and discloses a method and system for controlling the etching rate of laser double-sided etching of a quartz crystal. The system comprises: a rate determination unit configured to determine the initial etching rate of the laser double-sided etching based on an analytical result; a judgment unit configured to collect real-time etching image data of the quartz crystal to be etched, and determine whether to adjust the initial etching rate based on the real-time etching image data; a rate adjustment unit configured to determine an adjustment coefficient of the initial etching rate based on angle data and environmental data, and obtain a final etching rate; and an execution unit configured to perform laser double-sided etching on the quartz crystal to be etched at the final etching rate. The present invention improves the processing accuracy and efficiency of the quartz crystal by precisely controlling the laser double-sided etching rate.

Description

Technical Field

[0001] The present invention relates to the technical field of laser double-sided etching, and in particular to an etching rate control method and system for laser double-sided etching of a quartz crystal. Background Art

[0002] With the continuous advancement of technology, laser etching technology has been widely used in the processing of quartz crystals. Due to its unique physical and chemical properties, quartz crystals play an important role in electronics, communications, optics, and other fields. However, traditional laser etching methods often have difficulty in precisely controlling the etching rate, resulting in unsatisfactory etching results and affecting the performance and application range of quartz crystals.

[0003] Therefore, it is necessary to design an etching rate control method and system for laser double-sided etching of quartz crystals to solve the problems existing in the current technology. Summary of the Invention

[0004] In view of this, the present invention proposes an etching rate control method and system for laser double-sided etching of quartz crystals, aiming to achieve precise control of the laser double-sided etching rate of quartz crystals.

[0005] In one aspect, the present invention provides an etching rate control system for laser double-sided etching of a quartz crystal, comprising:

[0006] a rate determination unit configured to collect quartz crystal characteristic data of the quartz crystal to be etched and target data of laser double-sided etching, analyze the quartz crystal characteristic data and target data, and determine an initial etching rate of laser double-sided etching based on the analysis result;

[0007] a judgment unit configured to perform laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collect real-time etching image data of the quartz crystal to be etched, and judge whether to adjust the initial etching rate according to the real-time etching image data;

[0008] a rate adjustment unit configured to, when determining to adjust the initial etching rate, collect angle data and environmental data of laser double-sided etching, determine an adjustment coefficient of the initial etching rate based on the angle data and environmental data, and obtain a final etching rate;

[0009] The execution unit is configured to perform laser double-sided etching on the quartz crystal to be etched at the final etching rate.

[0010] Furthermore, the rate determination unit analyzes the quartz crystal characteristic data and the target data, and determines the initial etching rate of the laser double-sided etching based on the analysis result, including:

[0011] The quartz crystal characteristic data includes the crystal face index, surface roughness and crystal absorptivity of the quartz crystal to be etched;

[0012] The target data includes etching depth and etching accuracy;

[0013] Determining a basic etching rate of laser double-sided etching according to the crystal plane index and surface roughness;

[0014] Determining whether to modify the basic etching rate according to the crystal absorption rate;

[0015] When it is determined to correct the basic etching rate, an initial vector group is constructed according to the crystal absorption rate, etching depth and etching accuracy, a correction coefficient of the basic etching rate is determined according to the initial vector group, and the initial etching rate is obtained.

[0016] Furthermore, when the rate determination unit determines the basic etching rate of the laser double-sided etching according to the crystal plane index and the surface roughness, it includes:

[0017] Comparing the crystal plane index with a crystal plane index threshold, comparing the surface roughness with a surface roughness threshold, and determining a basic etching rate of laser double-sided etching according to the comparison results;

[0018] When the crystal plane index is greater than or equal to the crystal plane index threshold, and the surface roughness is greater than or equal to the surface roughness threshold, determining the basic etching rate to be a first etching rate;

[0019] When the crystal plane index is greater than or equal to the crystal plane index threshold, and the surface roughness is less than the surface roughness threshold, determining the basic etching rate to be a second etching rate;

[0020] When the crystal plane index is less than the crystal plane index threshold, and the surface roughness is greater than or equal to the surface roughness threshold, determining the basic etching rate to be a third etching rate;

[0021] When the crystal plane index is less than the crystal plane index threshold, and the surface roughness is less than the surface roughness threshold, the basic etching rate is determined to be a fourth etching rate.

[0022] Furthermore, when the rate determination unit determines whether to modify the basic etching rate according to the crystal absorption rate, it includes:

[0023] Comparing the crystal absorption rate with a crystal absorption rate threshold, and determining whether to modify the basic etching rate according to the comparison result;

[0024] When the crystal absorption rate is greater than or equal to the crystal absorption rate threshold, determining to correct the basic etching rate;

[0025] When the crystal absorption rate is less than the crystal absorption rate threshold, it is determined that the basic etching rate is not to be corrected, and the basic etching rate is used as the initial etching rate.

[0026] Furthermore, when the rate determination unit determines the correction coefficient of the basic etching rate according to the initial vector group and obtains the initial etching rate, it includes:

[0027] Comparing the initial vector group with the historical correction group, and determining the correction coefficient of the basic etching rate according to the comparison result;

[0028] When there is a historical vector group identical to the initial vector group in the historical correction group, the historical correction coefficient corresponding to the historical vector group is used as the correction coefficient, and the product of the historical correction coefficient and the basic etching rate is used as the initial etching rate;

[0029] When there is no historical vector group identical to the initial vector group in the historical correction group, the connection strength between the current initial vector group and each historical vector group is calculated, and the maximum connection strength is extracted; the correction coefficient of the basic etching rate is determined according to the maximum connection strength, and the product value of the correction coefficient and the basic etching rate is used as the initial etching rate.

[0030] Furthermore, when the rate determination unit determines the correction coefficient of the basic etching rate according to the maximum connection strength, it includes:

[0031] When the historical vector group corresponding to the maximum connection strength is unique, the historical correction coefficient corresponding to the historical vector group corresponding to the maximum connection strength is used as the correction coefficient;

[0032] When the historical vector group corresponding to the maximum connection strength is not unique, an average correction coefficient is calculated according to multiple historical vector groups corresponding to the maximum connection strength, and the average correction coefficient is used as the correction coefficient.

[0033] Furthermore, when the judgment unit judges whether to adjust the initial etching rate according to the real-time etching image data, it includes:

[0034] Performing feature extraction on the real-time etching image data to obtain etching image feature values;

[0035] Obtaining an etching image standard value corresponding to the etching image characteristic value, and calculating a ratio of the etching image characteristic value to the etching image standard value, which is recorded as an etching ratio;

[0036] Comparing the etching ratio with an etching ratio threshold, and determining whether to adjust the initial etching rate according to the comparison result;

[0037] When the etching ratio is greater than or equal to the etching ratio threshold, determining not to adjust the initial etching rate;

[0038] When the etching ratio is less than the etching ratio threshold, it is determined that the initial etching rate is to be adjusted.

[0039] Furthermore, the rate adjustment unit determines the adjustment coefficient of the initial etching rate based on the angle data and the environmental data, and obtains the final etching rate, including:

[0040] Analyzing the angle data to obtain the laser incident angle and the laser reflection angle;

[0041] Analyzing the environmental data to obtain the ambient temperature and humidity;

[0042] Calculating an angle deviation value based on the laser incident angle and the laser reflection angle, and calculating an environmental deviation value based on the ambient temperature and ambient humidity;

[0043] Calculating a comprehensive deviation value based on the angle deviation value and the environmental deviation value;

[0044] An adjustment coefficient of the initial etching rate is determined according to the comprehensive deviation value, and a product value of the adjustment coefficient and the initial etching rate is used as the final etching rate.

[0045] Furthermore, when the rate adjustment unit determines the adjustment coefficient of the initial etching rate according to the comprehensive deviation value, it includes:

[0046] Comparing the comprehensive deviation value with a first comprehensive deviation value and a second comprehensive deviation value, and determining an adjustment coefficient of the initial etching rate according to the comparison result; wherein the first comprehensive deviation value is smaller than the second comprehensive deviation value;

[0047] When the comprehensive deviation value is less than or equal to the first comprehensive deviation value, determining the adjustment coefficient to be the first adjustment coefficient;

[0048] When the comprehensive deviation value is greater than the first comprehensive deviation value and less than the second comprehensive deviation value, determining the adjustment coefficient to be the second adjustment coefficient;

[0049] When the comprehensive deviation value is greater than or equal to the second comprehensive deviation value, the adjustment coefficient is determined to be a third adjustment coefficient.

[0050] Compared with the prior art, the beneficial effect of the present invention is that the etching rate control system for laser double-sided etching of quartz crystals provided by the present invention improves the processing accuracy and efficiency of quartz crystals by precisely controlling the rate of laser double-sided etching. Specifically, the system can intelligently determine the initial etching rate based on different quartz crystal characteristic data and target data of laser double-sided etching, and collect real-time etching image data for monitoring and adjustment during the etching process. When it is found that the actual etching effect does not meet expectations, the system can automatically collect angle data and environmental data, and correct the initial etching rate to obtain the final accurate etching rate. This intelligent control method not only improves the accuracy and consistency of etching, but also greatly shortens the processing cycle and reduces production costs.

[0051] In another aspect, the present invention further provides a method for controlling the etching rate of laser double-sided etching of a quartz crystal, comprising the following steps:

[0052] S100: collecting quartz crystal characteristic data of a quartz crystal to be etched and target data of laser double-sided etching, analyzing the quartz crystal characteristic data and target data, and determining an initial etching rate of laser double-sided etching based on the analysis results;

[0053] S200: performing laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collecting real-time etching image data of the quartz crystal to be etched, and determining whether to adjust the initial etching rate based on the real-time etching image data;

[0054] S300: When it is determined that the initial etching rate needs to be adjusted, collecting angle data and environmental data of laser double-sided etching, determining an adjustment coefficient of the initial etching rate based on the angle data and environmental data, and obtaining a final etching rate;

[0055] S400: performing laser double-sided etching on the quartz crystal to be etched at the final etching rate.

[0056] It is understandable that the above-mentioned etching rate control method and system for laser double-sided etching of quartz crystal have the same beneficial effects, and will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present invention. The same reference symbols are used throughout the drawings to represent the same components. In the drawings:

[0058] Figure 1A structural block diagram of an etching rate control system for laser double-sided etching of a quartz crystal provided by an embodiment of the present invention;

[0059] Figure 2 A flow chart of an etching rate control method for laser double-sided etching of a quartz crystal provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0060] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art. It should be noted that, unless there is a conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

[0061] See Figure 1 As shown, in some embodiments of the present application, this embodiment provides an etching rate control system for laser double-sided etching of a quartz crystal, comprising:

[0062] a rate determination unit configured to collect quartz crystal characteristic data of the quartz crystal to be etched and target data of laser double-sided etching, analyze the quartz crystal characteristic data and target data, and determine an initial etching rate of laser double-sided etching based on the analysis result;

[0063] a judgment unit configured to perform laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collect real-time etching image data of the quartz crystal to be etched, and judge whether to adjust the initial etching rate according to the real-time etching image data;

[0064] a rate adjustment unit configured to, when determining to adjust the initial etching rate, collect angle data and environmental data of laser double-sided etching, determine an adjustment coefficient of the initial etching rate based on the angle data and environmental data, and obtain a final etching rate;

[0065] The execution unit is configured to perform laser double-sided etching on the quartz crystal to be etched at the final etching rate.

[0066] It can be understood that the etching rate control system for laser double-sided etching of quartz crystals provided in this embodiment improves the processing accuracy and efficiency of quartz crystals by precisely controlling the rate of laser double-sided etching. Specifically, the system can intelligently determine the initial etching rate based on different quartz crystal characteristic data and target data of laser double-sided etching, and collect real-time etching image data in real time for monitoring and adjustment during the etching process. When it is found that the actual etching effect does not meet expectations, the system can automatically collect angle data and environmental data, and correct the initial etching rate to obtain the final accurate etching rate. This intelligent control method not only improves the accuracy and consistency of etching, but also greatly shortens the processing cycle and reduces production costs.

[0067] Specifically, the rate determination unit analyzes the quartz crystal characteristic data and the target data, and determines the initial etching rate of the laser double-sided etching based on the analysis result, including:

[0068] The quartz crystal characteristic data includes the crystal face index, surface roughness and crystal absorptivity of the quartz crystal to be etched;

[0069] The target data includes etching depth and etching accuracy;

[0070] Determining a basic etching rate of laser double-sided etching according to the crystal plane index and surface roughness;

[0071] Determining whether to modify the basic etching rate according to the crystal absorption rate;

[0072] When it is determined to correct the basic etching rate, an initial vector group is constructed according to the crystal absorption rate, etching depth and etching accuracy, a correction coefficient of the basic etching rate is determined according to the initial vector group, and the initial etching rate is obtained.

[0073] It's easy to understand that by comprehensively considering the quartz crystal's crystal facet index, surface roughness, and crystal absorptivity, as well as the target etching depth and etching accuracy, this system can more accurately determine the initial etching rate. Crystal facet index and surface roughness, as fundamental properties of quartz crystal, directly influence the interaction between the laser and the crystal, thereby determining the basic etching rate. Crystal absorptivity, on the other hand, reflects the crystal's ability to absorb laser energy and is a key factor in adjusting the etching rate. If the crystal absorptivity is abnormal, the system intelligently adjusts the basic etching rate based on this parameter, ensuring the stability and accuracy of the etching process.

[0074] Specifically, when the rate determination unit determines the basic etching rate of laser double-sided etching according to the crystal plane index and the surface roughness, it includes:

[0075] Comparing the crystal plane index with a crystal plane index threshold, comparing the surface roughness with a surface roughness threshold, and determining a basic etching rate of laser double-sided etching according to the comparison results;

[0076] When the crystal plane index is greater than or equal to the crystal plane index threshold, and the surface roughness is greater than or equal to the surface roughness threshold, determining the basic etching rate to be a first etching rate;

[0077] When the crystal plane index is greater than or equal to the crystal plane index threshold, and the surface roughness is less than the surface roughness threshold, determining the basic etching rate to be a second etching rate;

[0078] When the crystal plane index is less than the crystal plane index threshold, and the surface roughness is greater than or equal to the surface roughness threshold, determining the basic etching rate to be a third etching rate;

[0079] When the crystal plane index is less than the crystal plane index threshold, and the surface roughness is less than the surface roughness threshold, the basic etching rate is determined to be a fourth etching rate.

[0080] It's understood that the crystal plane index threshold and surface roughness threshold are pre-set standard values ​​based on experimental data and the physical properties of quartz crystals. They are used to distinguish the degree to which different crystal plane indices and surface roughness affect the laser etching rate. By comparing these characteristic values ​​with the preset thresholds, the system can intelligently select the most appropriate basic etching rate to meet the etching requirements of different quartz crystals. This characteristic threshold-based classification method not only simplifies the etching rate determination process but also improves the accuracy and adaptability of the etching rate.

[0081] Specifically, when the rate determination unit determines whether to modify the basic etching rate according to the crystal absorption rate, it includes:

[0082] Comparing the crystal absorption rate with a crystal absorption rate threshold, and determining whether to modify the basic etching rate according to the comparison result;

[0083] When the crystal absorption rate is greater than or equal to the crystal absorption rate threshold, determining to correct the basic etching rate;

[0084] When the crystal absorption rate is less than the crystal absorption rate threshold, it is determined that the basic etching rate is not to be corrected, and the basic etching rate is used as the initial etching rate.

[0085] It is understandable that the crystal absorption rate threshold is also set based on a large amount of experimental data and the physical properties of quartz crystals, and is used to determine whether the crystal's absorption of laser energy has reached a level that requires adjustment of the etching rate. When the crystal absorption rate is higher than or equal to the threshold, it means that the crystal absorbs the laser energy strongly, which may cause the etching rate to be too fast. Therefore, the basic etching rate needs to be corrected to avoid over-etching or damaging the crystal. When the crystal absorption rate is lower than the threshold, it means that the crystal absorbs the laser energy moderately, and there is no need to adjust the basic etching rate to ensure the stability and accuracy of the etching process.

[0086] Specifically, when the rate determination unit determines the correction coefficient of the basic etching rate according to the initial vector group and obtains the initial etching rate, it includes:

[0087] Comparing the initial vector group with the historical correction group, and determining the correction coefficient of the basic etching rate according to the comparison result;

[0088] When there is a historical vector group identical to the initial vector group in the historical correction group, the historical correction coefficient corresponding to the historical vector group is used as the correction coefficient, and the product of the historical correction coefficient and the basic etching rate is used as the initial etching rate;

[0089] When there is no historical vector group identical to the initial vector group in the historical correction group, the connection strength between the current initial vector group and each historical vector group is calculated, and the maximum connection strength is extracted; the correction coefficient of the basic etching rate is determined according to the maximum connection strength, and the product value of the correction coefficient and the basic etching rate is used as the initial etching rate.

[0090] In this embodiment, the connection strength is obtained by the following formula:

[0091] ;

[0092] Among them, S(V,Vi) represents the connection strength between the current initial vector group V and the i-th historical vector group Vi in the historical correction group; ωj represents the weight coefficient of each vector component in the vector group, which is set according to experimental data and the physical properties of quartz crystal; Vj represents the j-th vector component of the current initial vector group; Vij represents the j-th vector component of the i-th historical vector group in the historical correction group.

[0093] It is understandable that when there is a historical vector group in the historical correction group that is exactly the same as the initial vector group, directly using the historical correction coefficient corresponding to the historical vector group for correction can ensure the accuracy and reliability of the correction. Because the historical correction coefficient is based on previous experimental data and etching experience, it has a high reference value. When there is no historical vector group in the historical correction group that is exactly the same as the initial vector group, by calculating the connection strength between the current initial vector group and each historical vector group, and extracting the maximum connection strength, a historical etching situation that is closest to the current etching conditions can be found, and the current basic etching rate can be corrected according to the correction coefficient corresponding to the historical etching situation. This correction method based on connection strength not only improves the flexibility of correction, but also can better adapt to the needs under different etching conditions, ensuring the stability and accuracy of the etching process.

[0094] Specifically, when the rate determination unit determines the correction coefficient of the basic etching rate according to the maximum connection strength, it includes:

[0095] When the historical vector group corresponding to the maximum connection strength is unique, the historical correction coefficient corresponding to the historical vector group corresponding to the maximum connection strength is used as the correction coefficient;

[0096] When the historical vector group corresponding to the maximum connection strength is not unique, an average correction coefficient is calculated according to multiple historical vector groups corresponding to the maximum connection strength, and the average correction coefficient is used as the correction coefficient.

[0097] It's understandable that when the historical vector group corresponding to the maximum connection strength isn't unique, there may be multiple historical etching conditions similar to the current etching conditions. To more accurately determine the correction factor, the system uses the average correction factor of these historical vector groups. This averaging method comprehensively considers the impact of multiple similar historical etching conditions, improving the accuracy and reliability of the correction factor. After determining the correction factor, the system multiplies it by the basic etching rate to obtain the initial etching rate. This initial etching rate provides an important reference for subsequent etching processes.

[0098] Specifically, when the judgment unit judges whether to adjust the initial etching rate according to the real-time etching image data, it includes:

[0099] Performing feature extraction on the real-time etching image data to obtain etching image feature values;

[0100] Obtaining an etching image standard value corresponding to the etching image characteristic value, and calculating a ratio of the etching image characteristic value to the etching image standard value, which is recorded as an etching ratio;

[0101] Comparing the etching ratio with an etching ratio threshold, and determining whether to adjust the initial etching rate according to the comparison result;

[0102] When the etching ratio is greater than or equal to the etching ratio threshold, determining not to adjust the initial etching rate;

[0103] When the etching ratio is less than the etching ratio threshold, it is determined that the initial etching rate is to be adjusted.

[0104] In this embodiment, the etching image characteristic value is preferably edge clarity; the edge clarity uses the Sobel operator to perform edge detection on the real-time etching image data to obtain an edge image; then, the gradient value of the edge pixels in the edge image is calculated, and the average value of the gradient values ​​of all edge pixels is used as the edge clarity.

[0105] In this embodiment, the etching image standard value is pre-set according to the expected etching effect and the physical properties of the quartz crystal, and is used for comparison with the actual etching image characteristic value.

[0106] It is understandable that the judgment unit can monitor the etching effect in real time by extracting the features of the real-time etching image data and comparing it with the standard value, and intelligently decide whether to adjust the initial etching rate based on the comparison result of the etching ratio and the threshold. The etching ratio is an important indicator to measure the degree of closeness between the actual etching effect and the expected target. Its calculation is based on the ratio of the etching image characteristic value to the standard value, which can intuitively reflect the stability and accuracy of the etching process. When the etching ratio reaches or exceeds the threshold, it means that the actual etching effect is consistent with the expected target and there is no need to adjust the initial etching rate. When the etching ratio is lower than the threshold, it means that there is a deviation between the actual etching effect and the expected target. At this time, the system can automatically trigger the rate adjustment mechanism to correct the initial etching rate to ensure the accuracy and consistency of the etching process.

[0107] Specifically, the rate adjustment unit determines the adjustment coefficient of the initial etching rate based on the angle data and the environmental data, and obtains the final etching rate, including:

[0108] Analyzing the angle data to obtain the laser incident angle and the laser reflection angle;

[0109] Analyzing the environmental data to obtain the ambient temperature and humidity;

[0110] Calculating an angle deviation value based on the laser incident angle and the laser reflection angle, and calculating an environmental deviation value based on the ambient temperature and ambient humidity;

[0111] Calculating a comprehensive deviation value based on the angle deviation value and the environmental deviation value;

[0112] An adjustment coefficient of the initial etching rate is determined according to the comprehensive deviation value, and a product value of the adjustment coefficient and the initial etching rate is used as the final etching rate.

[0113] In this embodiment, the calculation formula of the angle deviation value is:

[0114] ;

[0115] Among them, Δθ represents the angle deviation value; θk represents the laser incident angle; θbk represents the standard laser incident angle; θr represents the laser reflection angle; θbr represents the standard laser reflection angle.

[0116] In this embodiment, the calculation formula of the environmental deviation value is:

[0117] ;

[0118] Among them, ΔE represents the environmental deviation value; μT represents the weight coefficient of the environmental temperature, preferably 0.6; T represents the environmental temperature; T0 represents the standard environmental temperature; μH represents the weight coefficient of the environmental humidity, preferably 0.4; H represents the environmental humidity; H0 represents the standard environmental humidity.

[0119] In this embodiment, the calculation formula of the comprehensive deviation value is:

[0120] ;

[0121] Wherein, Z represents the comprehensive deviation value; α represents the weight coefficient of the angle deviation value, preferably 0.45; Δθ represents the angle deviation value; β represents the weight coefficient of the environment deviation value, preferably 0.55; ΔE represents the environment deviation value.

[0122] It is understandable that the rate adjustment unit fine-tunes the initial etching rate by comprehensively considering multiple factors such as the laser incident angle, laser reflection angle, ambient temperature and ambient humidity. Accurate measurement of the laser incident angle and reflection angle is crucial for evaluating the interaction between the laser and the quartz crystal. They directly affect the distribution of laser energy and the uniformity of the etching effect. Ambient temperature and humidity may affect the propagation characteristics of the laser and the physical properties of the quartz crystal, thereby affecting the etching rate. By calculating the angle deviation value and the environmental deviation value and combining them into a comprehensive deviation value, the system can more comprehensively evaluate the various deviations in the etching process, thereby determining a more accurate adjustment coefficient.

[0123] Specifically, when the rate adjustment unit determines the adjustment coefficient of the initial etching rate according to the comprehensive deviation value, it includes:

[0124] Comparing the comprehensive deviation value with a first comprehensive deviation value and a second comprehensive deviation value, and determining an adjustment coefficient of the initial etching rate according to the comparison result; wherein the first comprehensive deviation value is smaller than the second comprehensive deviation value;

[0125] When the comprehensive deviation value is less than or equal to the first comprehensive deviation value, determining the adjustment coefficient to be the first adjustment coefficient;

[0126] When the comprehensive deviation value is greater than the first comprehensive deviation value and less than the second comprehensive deviation value, determining the adjustment coefficient to be the second adjustment coefficient;

[0127] When the comprehensive deviation value is greater than or equal to the second comprehensive deviation value, the adjustment coefficient is determined to be a third adjustment coefficient.

[0128] In this embodiment, the magnitude relationship among the first adjustment coefficient, the second adjustment coefficient, and the third adjustment coefficient is: first adjustment coefficient < second adjustment coefficient < third adjustment coefficient.

[0129] It is understandable that this method based on graded adjustment of the comprehensive deviation value can make different degrees of corrections to the initial etching rate according to the degree of deviation at different levels, thereby more accurately controlling the final etching rate. When the comprehensive deviation value is small, it means that the various deviations in the etching process are small. At this time, a smaller adjustment coefficient is used for fine-tuning to maintain the stability and accuracy of the etching rate. When the comprehensive deviation value is large, it means that the deviation in the etching process is large. At this time, a larger adjustment coefficient is required for a larger correction to ensure that the etching effect meets expectations. This hierarchical adjustment strategy not only improves the control accuracy of the etching rate, but also enhances the adaptability and robustness of the system.

[0130] See Figure 2 As shown, in some embodiments of the present application, this embodiment provides an etching rate control method for laser double-sided etching of a quartz crystal, comprising the following steps:

[0131] S100: collecting quartz crystal characteristic data of a quartz crystal to be etched and target data of laser double-sided etching, analyzing the quartz crystal characteristic data and target data, and determining an initial etching rate of laser double-sided etching based on the analysis results;

[0132] S200: performing laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collecting real-time etching image data of the quartz crystal to be etched, and determining whether to adjust the initial etching rate based on the real-time etching image data;

[0133] S300: When it is determined that the initial etching rate needs to be adjusted, collecting angle data and environmental data of laser double-sided etching, determining an adjustment coefficient of the initial etching rate based on the angle data and environmental data, and obtaining a final etching rate;

[0134] S400: performing laser double-sided etching on the quartz crystal to be etched at the final etching rate.

[0135] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware. Furthermore, the present application may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0136] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems) and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0137] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0138] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0139] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered by the scope of protection of the claims of the present invention.

Claims

1. An etching rate control system for laser double-sided etching of quartz crystal, characterized in that: include: a rate determination unit configured to collect quartz crystal characteristic data of the quartz crystal to be etched and target data of laser double-sided etching, analyze the quartz crystal characteristic data and target data, and determine an initial etching rate of laser double-sided etching based on the analysis result; a judgment unit configured to perform laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collect real-time etching image data of the quartz crystal to be etched, and judge whether to adjust the initial etching rate according to the real-time etching image data; a rate adjustment unit configured to, when determining to adjust the initial etching rate, collect angle data and environmental data of laser double-sided etching, determine an adjustment coefficient of the initial etching rate based on the angle data and environmental data, and obtain a final etching rate; an execution unit configured to perform laser double-sided etching on the quartz crystal to be etched at the final etching rate; The rate determination unit analyzes the quartz crystal characteristic data and the target data, and determines the initial etching rate of the laser double-sided etching based on the analysis result, including: The quartz crystal characteristic data includes the crystal face index, surface roughness and crystal absorptivity of the quartz crystal to be etched; The target data includes etching depth and etching accuracy; Determining a basic etching rate of laser double-sided etching according to the crystal plane index and surface roughness; Determining whether to modify the basic etching rate according to the crystal absorption rate; When it is determined that the basic etching rate is to be corrected, an initial vector group is constructed according to the crystal absorption rate, etching depth and etching accuracy, a correction coefficient of the basic etching rate is determined according to the initial vector group, and the initial etching rate is obtained; When the rate determination unit determines the correction coefficient of the basic etching rate according to the initial vector group and obtains the initial etching rate, it includes: Comparing the initial vector group with the historical correction group, and determining the correction coefficient of the basic etching rate according to the comparison result; When there is a historical vector group identical to the initial vector group in the historical correction group, the historical correction coefficient corresponding to the historical vector group is used as the correction coefficient, and the product of the historical correction coefficient and the basic etching rate is used as the initial etching rate; When there is no historical vector group identical to the initial vector group in the historical correction group, calculating the connection strength between the current initial vector group and each historical vector group, and extracting the maximum connection strength; determining a correction coefficient for the basic etching rate based on the maximum connection strength, and taking the product of the correction coefficient and the basic etching rate as the initial etching rate; When the rate determination unit determines the correction coefficient of the basic etching rate according to the maximum connection strength, it includes: When the historical vector group corresponding to the maximum connection strength is unique, the historical correction coefficient corresponding to the historical vector group corresponding to the maximum connection strength is used as the correction coefficient; When the historical vector group corresponding to the maximum connection strength is not unique, an average correction coefficient is calculated according to multiple historical vector groups corresponding to the maximum connection strength, and the average correction coefficient is used as the correction coefficient.

2. The etching rate control system for laser double-sided etching of quartz crystal according to claim 1, characterized in that: When the rate determination unit determines the basic etching rate of the laser double-sided etching according to the crystal plane index and the surface roughness, it includes: Comparing the crystal plane index with a crystal plane index threshold, comparing the surface roughness with a surface roughness threshold, and determining a basic etching rate of laser double-sided etching according to the comparison results; When the crystal plane index is greater than or equal to the crystal plane index threshold, and the surface roughness is greater than or equal to the surface roughness threshold, determining the basic etching rate to be a first etching rate; When the crystal plane index is greater than or equal to the crystal plane index threshold, and the surface roughness is less than the surface roughness threshold, determining the basic etching rate to be a second etching rate; When the crystal plane index is less than the crystal plane index threshold, and the surface roughness is greater than or equal to the surface roughness threshold, determining the basic etching rate to be a third etching rate; When the crystal plane index is less than the crystal plane index threshold, and the surface roughness is less than the surface roughness threshold, the basic etching rate is determined to be a fourth etching rate.

3. The etching rate control system for laser double-sided etching of quartz crystal according to claim 2, characterized in that: When the rate determination unit determines whether to modify the basic etching rate according to the crystal absorption rate, it includes: Comparing the crystal absorption rate with a crystal absorption rate threshold, and determining whether to modify the basic etching rate according to the comparison result; When the crystal absorption rate is greater than or equal to the crystal absorption rate threshold, determining to correct the basic etching rate; When the crystal absorption rate is less than the crystal absorption rate threshold, it is determined that the basic etching rate is not to be corrected, and the basic etching rate is used as the initial etching rate.

4. The etching rate control system for laser double-sided etching of quartz crystal according to claim 1, characterized in that: When the judging unit judges whether to adjust the initial etching rate according to the real-time etching image data, it includes: Performing feature extraction on the real-time etching image data to obtain etching image feature values; Obtaining an etching image standard value corresponding to the etching image characteristic value, and calculating a ratio of the etching image characteristic value to the etching image standard value, which is recorded as an etching ratio; Comparing the etching ratio with an etching ratio threshold, and determining whether to adjust the initial etching rate according to the comparison result; When the etching ratio is greater than or equal to the etching ratio threshold, determining not to adjust the initial etching rate; When the etching ratio is less than the etching ratio threshold, it is determined that the initial etching rate is to be adjusted.

5. The etching rate control system for laser double-sided etching of quartz crystal according to claim 4, characterized in that: The rate adjustment unit determines the adjustment coefficient of the initial etching rate based on the angle data and the environmental data, and obtains the final etching rate, including: Analyzing the angle data to obtain the laser incident angle and the laser reflection angle; Analyzing the environmental data to obtain the ambient temperature and humidity; Calculating an angle deviation value based on the laser incident angle and the laser reflection angle, and calculating an environmental deviation value based on the ambient temperature and ambient humidity; Calculating a comprehensive deviation value based on the angle deviation value and the environmental deviation value; An adjustment coefficient of the initial etching rate is determined according to the comprehensive deviation value, and a product value of the adjustment coefficient and the initial etching rate is used as the final etching rate.

6. The etching rate control system for laser double-sided etching of quartz crystal according to claim 5, characterized in that: When the rate adjustment unit determines the adjustment coefficient of the initial etching rate according to the comprehensive deviation value, it includes: Comparing the comprehensive deviation value with a first comprehensive deviation value and a second comprehensive deviation value, and determining an adjustment coefficient of the initial etching rate according to the comparison result; wherein the first comprehensive deviation value is smaller than the second comprehensive deviation value; When the comprehensive deviation value is less than or equal to the first comprehensive deviation value, determining the adjustment coefficient to be the first adjustment coefficient; When the comprehensive deviation value is greater than the first comprehensive deviation value and less than the second comprehensive deviation value, determining the adjustment coefficient to be the second adjustment coefficient; When the comprehensive deviation value is greater than or equal to the second comprehensive deviation value, the adjustment coefficient is determined to be a third adjustment coefficient.

7. A method for controlling the etching rate of laser double-sided etching of a quartz crystal, applied to the etching rate controlling system for laser double-sided etching of a quartz crystal according to any one of claims 1 to 6, characterized in that: include: Collecting quartz crystal characteristic data of the quartz crystal to be etched and target data of laser double-sided etching, analyzing the quartz crystal characteristic data and target data, and determining an initial etching rate of the laser double-sided etching based on the analysis results; Performing laser double-sided etching on the quartz crystal to be etched at the initial etching rate, collecting real-time etching image data of the quartz crystal to be etched, and determining whether to adjust the initial etching rate based on the real-time etching image data; When it is determined that the initial etching rate is to be adjusted, collecting angle data and environmental data of laser double-sided etching, determining an adjustment coefficient of the initial etching rate based on the angle data and environmental data, and obtaining a final etching rate; Laser double-sided etching is performed on the quartz crystal to be etched at the final etching rate.

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