SiO2 layer stress regulation and control method based on silicon-containing polymer

Abstract

The invention relates to a SiO2 layer stress regulation and control method based on a silicon-containing polymer, and belongs to the technical field of silicon-containing polymers. According to the method, the boron-containing compound is adopted to modify the silicon-containing polymer, the modified silicon-containing polymer can avoid common defects such as pores and differentials in thermal annealing treatment, the density of the dielectric layer is improved, the stress of the SiO2 layer is reduced, and the electrical performance and reliability of the SiO2 layer are improved. The preparation method is simple in process and easy in large-scale production, the stress of the SiO2 layer can be freely regulated and controlled in a wide range, and the SiO2 layer prepared by the preparation method can provide higher performance in microelectronic devices and has a good application prospect.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon-containing polymers, and particularly to a method for stress regulation of SiO2 layers based on silicon-containing polymers. Background Art

[0002] In electronic devices, the SiO2 layer, as a key material for insulation, isolation, protection, and performance improvement of devices, ensures the independence of different functional layers, preventing crosstalk and electron migration. However, during the conversion of silicon-containing polymers into SiO2 layers, volume shrinkage occurs, resulting in stress generation. Appropriate stress helps enhance the structural stability of the dielectric layer, but excessive stress can lead to a decline in device performance, reduced reliability, and even device failure. Generally, excessive tensile or compressive stress can cause cracking or peeling of the dielectric layer, destroying its isolation function and even triggering device failure. Therefore, during the design and manufacturing process of the SiO2 layer, it is necessary to control the generation of stress, select appropriate materials and structures, and optimize the film-forming process to ensure the high performance and reliability of the SiO2 layer.

[0003] In addition, in certain application scenarios, introducing stress into the dielectric layer and precisely regulating it can synergistically optimize the mechanical, electrical, optical, and thermal properties of the material: compressive stress can reconstruct the lattice symmetry to improve the carrier transport efficiency, and gradient stress can induce band bending to enhance the separation of photo-generated carriers. Therefore, achieving stress regulation of the dielectric layer is of great significance. However, the methods of the prior art cannot achieve free regulation of stress. Summary of the Invention

[0004] In view of the above analysis, the present invention aims to provide a method for stress regulation of SiO2 layers based on silicon-containing polymers to solve at least one of the problems that the existing methods cannot achieve wide-range free regulation of the stress of the SiO2 layer, the performance of the prepared microelectronic devices is low, and the reliability is poor.

[0005] In a first aspect, the present invention provides a method for stress regulation of SiO2 layers based on silicon-containing polymers, including the following steps: (1) Reacting a solution of a boron-containing compound and a silicon-containing polymer under an inert atmosphere to obtain a boron-modified silicon-containing polymer precursor; (2) Adding a catalyst to the boron-modified silicon-containing polymer precursor, mixing, coating and forming a film on a substrate, baking, and performing thermal annealing treatment to obtain the SiO2 layer.

[0006] Further, in step (1), the structural formula of the silicon-containing polymer is as follows: ; Among them, R1, R2, and R3 are each independently selected from one of H, halogen, C1-C6 aliphatic hydrocarbons and their derivatives, and C6-C12 aromatic hydrocarbons and their derivatives, and the value of n is 20-1000.

[0007] Furthermore, the weight-average molecular weight Mw of the silicon-containing polymer is 2000-50000 g / mol, and the PDI is 2-10.

[0008] Furthermore, in step (1), the boron-containing compound includes one or more of boric acid, sodium borate, borane complex, trimethyl borate, triborane, tetraborane, boron tetrafluoride, boron trifluoride, boron chloride, boron trichloride, boron dichloride, boron fluoride, sodium borohydride, perboric acid, phenylboronic acid, triphenylboron.

[0009] Furthermore, in step (1), the mass fraction of the silicon-containing polymer in the solution of the silicon-containing polymer is 1-100%.

[0010] Furthermore, in step (1), the reaction is specifically as follows: The solution of the silicon-containing polymer and the boron-containing compound are fully stirred and mixed evenly until no bubbles are generated, and then heated for reaction until bubbles are generated again in the solution, and then stirred to obtain a boron-modified silicon-containing polymer precursor.

[0011] Furthermore, the temperature of the heating reaction is 30-120 °C, and the stirring time is 0.1-24 h.

[0012] Furthermore, in step (1), the molar ratio of the Si element in the silicon-containing polymer to the B element in the boron-containing compound is 0.5:1-20:1.

[0013] Furthermore, the mass fraction of the catalyst in the boron-modified silicon-containing polymer precursor is 0-1%.

[0014] In the second aspect, the present invention provides a microelectronic device including the SiO2 layer obtained in the above application.

[0015] Compared with the prior art, the present invention can at least achieve one of the following beneficial effects: In the present invention, a boron-containing compound is used to modify the silicon-containing polymer. The modified silicon-containing polymer can avoid common defects such as pores and microphase separation during thermal annealing treatment, improve the density of the dielectric layer, reduce the stress of the SiO2 layer, improve its electrical properties and reliability. The application process of the present invention is simple and easy to scale up. The method of the present invention can freely adjust the stress of the SiO2 layer in a wide range. The SiO2 layer prepared in the present invention can provide higher performance in microelectronic devices, and has good application prospects.

[0016] In the present invention, the above technical solutions can also be combined with each other to achieve more preferred combination solutions. Other features and advantages of the present invention will be described in the following specification, and some advantages can be made obvious from the specification or understood by implementing the present invention. The objectives and other advantages of the present invention can be achieved and obtained from the content specifically pointed out in the specification and the drawings. Description of the Drawings

[0017] The drawings are only for the purpose of showing specific embodiments and are not considered as limiting the present invention. Throughout the drawings, the same reference signs represent the same components. Figure 1 It is the infrared spectrogram of the boron-modified silicon-containing polymer precursor prepared in Example 1 of the present invention. Figure 2 It is the electron microscope image after filling the trench structure by the method of Example 3 of the present invention. Figure 3 It is the electron microscope image after filling the trench structure by the method of Comparative Example 1 of the present invention. Detailed Embodiments

[0018] The following will specifically describe the preferred embodiments of the present invention in conjunction with the drawings. Among them, the drawings form a part of the present invention and are used together with the embodiments of the present invention to explain the principle of the present invention, rather than to limit the scope of the present invention.

[0019] A specific embodiment of the present invention discloses a method for stress regulation of the SiO2 layer based on a silicon-containing polymer, including the following steps: (1) Under an inert atmosphere, react a solution of a boron-containing compound and a silicon-containing polymer to obtain a boron-modified silicon-containing polymer precursor. (2) Add a catalyst to the boron-modified silicon-containing polymer precursor, mix, coat and form a film on a substrate, bake, and perform thermal annealing treatment to obtain the SiO2 layer.

[0020] Compared with the prior art, in the present invention, a boron-containing compound is used to modify the silicon-containing polymer. The modified silicon-containing polymer can avoid common defects such as pores and microdomain phases during thermal annealing treatment, improve the density of the dielectric layer, reduce the stress of the SiO2 layer, improve its electrical performance and reliability. The process of the present invention is simple and easy to scale up production. The method of the present invention can freely regulate the stress of the SiO2 layer in a wide range. The SiO2 layer prepared in the present invention can provide higher performance and longer service life in microelectronic devices, and has good application prospects.

[0021] Specifically, in step (1), the structural formula of the silicon-containing polymer is as follows: ; Among them, R1, R2, and R3 are each independently selected from one of H, halogen, C1-C6 aliphatic hydrocarbons and their derivatives, and C6-C12 aromatic hydrocarbons and their derivatives, and the value of n is 20-1000. For example, 100, 200, 300, 400, 500, 600, 700, 800, 900.

[0022] It should be noted that the silicon-containing polymers of the present invention are all prepared from commercially available raw materials or existing methods.

[0023] Preferably, the weight-average molecular weight Mw of the silicon-containing polymer is 2000-50000 g / mol. For example, 5000 g / mol, 10000 g / mol, 15000 g / mol, 20000 g / mol, 25000 g / mol, 30000 g / mol, 35000 g / mol, 40000 g / mol, 45000 g / mol, and the PDI is 2-10. For example, 3, 4, 5, 6, 7, 8, 9.

[0024] Specifically, the boron-containing compound includes one or more of boric acid, sodium borate, borane complex, trimethyl borate, triborane, tetraborane, boron tetrafluoride, boron trifluoride, boron chloride, boron trichloride, boron dichloride, boron fluoride, sodium borohydride, perboric acid, phenylboronic acid, triphenylboron.

[0025] Preferably, the borane complex includes a dimethyl sulfide complex of borane.

[0026] Specifically, in step (1), the inert atmosphere includes nitrogen and / or argon.

[0027] Specifically, in step (1), the mass fraction of the silicon-containing polymer in the solution of the silicon-containing polymer is 1-100%. For example, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%.

[0028] Preferably, the solvent in the solution of the silicon-containing polymer is one or more of aromatic compounds, saturated hydrocarbon compounds, chlorinated solvents, esters, and ketones.

[0029] More preferably, the aromatic compounds include one or more of benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, and triethylbenzene; The saturated hydrocarbon compounds include one or more of cyclohexane, decahydronaphthalene, dipentene, n-pentane, isopentane, n-hexane, isohexane, isoheptane, n-heptane, n-octane, isooctane, n-nonane, isononane, n-decane, ethylcyclohexane, methylcyclohexane, cyclohexane, and p-menthane; The chlorinated solvents include one or more of chloroform, carbon tetrachloride, and dichloroethylene; The esters include one or more of n-butyl acetate, n-amyl acetate, isoamyl acetate, and ethyl acetate; The ketones include methyl isobutyl ketone and / or cyclohexanone.

[0030] Specifically, in step (1), the reaction is as follows: The solution of the silicon-containing polymer and the boron-containing compound are fully stirred and mixed evenly until no bubbles are generated, and then heated for reaction until bubbles are generated again in the solution, and then stirred to obtain a boron-modified silicon-containing polymer precursor.

[0031] Preferably, the temperature of the heating reaction is 30-120 °C, for example, 40 °C, 50 °C, 60 °C, 70 °C, 80 °C, 90 °C, 100 °C, 110 °C, and the stirring time is 0.1-24 h, for example, 1 h, 2 h, 3 h, 4 h, 5 h, 6 h, 7 h, 8 h, 9 h, 10 h, 11 h, 12 h, 13 h, 14 h, 15 h, 16 h, 17 h, 18 h, 19 h, 20 h, 21 h, 22 h, 23 h.

[0032] Specifically, in step (1), the molar ratio of Si element in the silicon-containing polymer to B element in the boron-containing compound is 0.5:1-20:1, for example, 1:1, 2:1, 3:1, 4:1, 5:1, 6:1, 7:1, 8:1, 9:1, 10:1, 11:1, 12:1, 13:1, 14:1, 15:1, 16:1, 17:1, 18:1, 19:1.

[0033] It should be noted that different mixing ratios of the boron-containing compound and the silicon-containing polymer will have a significant impact on the properties of the obtained boron-modified silicon-containing polymer precursor, especially the stress performance of the SiO2 layer. As the mixing ratio changes, the stress of the obtained SiO2 layer will also change.

[0034] Specifically, in step (2), the catalyst is a metal catalyst and / or an amine catalyst.

[0035] Preferably, the metal catalyst is an organotin catalyst and / or a palladium catalyst; More preferably, the organotin catalyst is one or more of dibutyltin dilaurate, triphenyltin, and stannous octoate; The palladium catalyst is one or more of carbon / palladium, palladium propionate salt, and palladium chloride.

[0036] Preferably, the amine catalyst is one or more of aliphatic amines, alicyclic amines, alkanolamines, and aromatic amines.

[0037] More preferably, the aliphatic amines include one or more of diethylamine, triethylamine, and triethylenetetramine; The alicyclic amines include one or more of triethylenediamine, piperazine, piperidine, and morpholine; The alkanolamines include one or more of N,N'-diethylethanolamine, N,N'-dimethylethanolamine, and diisopropanolamine; The aromatic amines include one or more of aniline, benzidine, o-phenylenediamine, and N,N'-dimethylaniline.

[0038] Specifically, the mass fraction of the catalyst in the boron-modified silicon-containing polymer precursor is 0 to 1%, for example, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%.

[0039] Specifically, in step (2), the substrate is a silicon wafer or a glass wafer.

[0040] It should be noted that the substrate surface needs to be pretreated before coating. Specifically, cleaning, drying and other treatment processes can be selected according to the properties of the material to improve the adhesion of the SiO2 layer.

[0041] Preferably, the coating is selected as a spin coating process, and the spin coating speed is set at 100 to 12000 rpm, for example, 1000 rpm, 2000 rpm, 3000 rpm, 4000 rpm, 5000 rpm, 6000 rpm, 7000 rpm, 8000 rpm, 9000 rpm, 10000 rpm, 11000 rpm, and the spin coating time is 5 to 120 s, for example, 10 s, 20 s, 30 s, 40 s, 50 s, 60 s, 70 s, 80 s, 90 s, 100 s, 110 s.

[0042] It should be noted that at the above spin coating speed, the uniformity and appropriate thickness of the film can be ensured, and the film can be formed within the above spin coating time, and the solution will not volatilize too fast or be uneven due to too long spin coating time.

[0043] Specifically, in step (2), the baking temperature is 30~200°C, for example, 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C, 180°C, 190°C, and the baking time is 1~60 min, for example, 5 min, 10 min, 15 min, 20 min, 25 min, 30 min, 35 min, 40 min, 45 min, 50 min, 55 min. The purpose of this step is to remove the solvent and avoid the influence of solvent volatilization on the densification and uniformity of the dielectric layer during the subsequent conversion process. If the temperature is too low, the solvent is difficult to volatilize, resulting in defects introduced during the subsequent curing process. If the temperature is too high, premature conversion of the silicon polymer may occur, affecting the subsequent densification.

[0044] Specifically, in step (2), the temperature of the thermal annealing treatment is 100~1000°C, for example, 200°C, 300°C, 400°C, 500°C, 600°C, 700°C, 800°C, 900°C, the heating rate is 1~20°C / min, for example, 2°C / min, 4°C / min, 6°C / min, 8°C / min, 10°C / min, 12°C / min, 14°C / min, 16°C / min, 18°C / min, and the total time of the thermal annealing treatment is 5~300 min, for example, 30 min, 60 min, 90 min, 120 min, 150 min, 180 min, 210 min, 240 min, 270 min.

[0045] Preferably, in step (2), the thermal annealing treatment further includes a constant temperature zone.

[0046] The holding time of the constant temperature zone is 1~80 min, for example, 10 min, 20 min, 30 min, 40 min, 50 min, 60 min, 70 min.

[0047] It should be noted that the constant temperature zone refers to the period of continued heat preservation after the target temperature is reached during the thermal annealing treatment.

[0048] Preferably, in step (2), the atmosphere in the thermal annealing treatment is one or more of oxygen, air, nitrogen, and water vapor.

[0049] In another specific embodiment of the present invention, a microelectronic device is disclosed, including the SiO2 layer obtained by the above method.

[0050] Preferably, the microelectronic device includes one of a memristor, a transistor, and a solar cell.

[0051] The technical solution of the present invention will be further explained and illustrated below in conjunction with specific embodiments.

[0052] Example 1 The method for regulating the stress of the SiO2 layer based on the silicon-containing polymer in this example includes the following steps: (1) Under the protection of a nitrogen atmosphere, the dimethyl sulfide complex of borane and a 10% n-butyl ether solution of the silicon-containing polymer are mixed at a silicon-boron element molar ratio of 20:1, stirred at room temperature for 30 min. Among them, the structure of the silicon-containing polymer is such that R1, R2, and R3 are all H atoms. After the solution has no bubbles, it is heated at 50 °C. When the solution generates bubbles again, continue stirring for 1 h to obtain a boron-modified silicon-containing polymer precursor; Among them, the weight-average molecular weight of the perhydropolysiloxane is 4500 g / mol, and the PDI is 5.5; (2) Add 0.1% dibutyltin dilaurate as a catalyst to the boron-modified silicon-containing polymer precursor, mix well, spin-coat on a silicon wafer at a spin-coating speed of 1000 rpm for 60 s. After heating and baking at 120 °C for 5 min to volatilize the solvent, transfer it to a high-temperature furnace with a heating rate of 10 °C / min to 600 °C, and keep it at this temperature for 2 h to obtain the SiO2 layer.

[0053] The infrared spectrum of the boron-modified silicon-containing polymer precursor prepared in this example is as Figure 1 shown, and the B-N characteristic absorption peak is at 1375 cm -1 .

[0054] Example 2 The method for regulating the stress of the SiO2 layer based on the silicon-containing polymer in this example is the same as that in Example 1, except that in step (1), the dimethyl sulfide complex of borane and a 10% n-butyl ether solution of the silicon-containing polymer are mixed at a silicon-boron element molar ratio of 10:1, heated at 30 °C, and continue stirring for 24 h; In step (2), the mass fraction of the catalyst is 1%.

[0055] Example 3 The method for regulating the stress of the SiO2 layer based on the silicon-containing polymer in this example is the same as that in Example 1, except that in step (1), the dimethyl sulfide complex of borane and a 10% n-butyl ether solution of the silicon-containing polymer are mixed at a silicon-boron element molar ratio of 5:1, heated at 120 °C, and continue stirring for 1 min; In step (2), the catalyst is N,N'-dimethylethanolamine.

[0056] Example 4 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this embodiment is the same as that in Embodiment 1. The difference lies in that in step (1), the dimethyl sulfide complex of borane is mixed with the n-butyl ether solution of the silicon-containing polymer with a mass fraction of 1% at a molar ratio of silicon to boron elements of 2:1; In step (2), no catalyst is added.

[0057] Embodiment 5 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this embodiment is the same as that in Embodiment 1. The difference lies in that in step (1), the dimethyl sulfide complex of borane is mixed with the n-butyl ether solution of the silicon-containing polymer with a mass fraction of 10% at a molar ratio of silicon to boron elements of 1:1.

[0058] Embodiment 6 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this embodiment is the same as that in Embodiment 1. The difference lies in that in step (1), the dimethyl sulfide complex of borane is mixed with the n-butyl ether solution of the silicon-containing polymer with a mass fraction of 10% at a molar ratio of silicon to boron elements of 0.5:1.

[0059] Embodiment 7 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this embodiment is the same as that in Embodiment 1. The difference lies in that in step (1), the dimethyl sulfide complex of borane is replaced by boron trichloride.

[0060] Embodiment 8 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this embodiment is the same as that in Embodiment 1. The difference lies in that in step (1), the dimethyl sulfide complex of borane is replaced by trimethyl borate.

[0061] Embodiment 9 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this embodiment is the same as that in Embodiment 1. The difference lies in that in step (1), the dimethyl sulfide complex of borane is replaced by triborane.

[0062] Embodiment 10 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this embodiment is the same as that in Embodiment 1. The difference lies in that in step (1), the silicon-containing polymer is replaced by a silicon-containing polymer with R1 being methyl and R2, R3 being hydrogen atoms, having a weight-average molecular weight of 3300 g / mol and a PDI of 4.5.

[0063] Embodiment 11 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this example is the same as that in Example 1, except that the silicon-containing polymer is replaced with a silicon-containing polymer where R1 is vinyl, R2 is methyl, and R3 is a hydrogen atom, with a weight-average molecular weight of 4200 and a PDI of 3.9.

[0064] Example 12 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this example is the same as that in Example 1, except that n-butyl ether is replaced with ethyl acetate.

[0065] Example 13 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this example is the same as that in Example 1, except that n-butyl ether is replaced with toluene.

[0066] Example 14 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this example is the same as that in Example 1, except that in step (2), the heating rate in the high-temperature furnace is 10 °C / min to 800 °C, and it is kept at this temperature for 2 h to obtain the SiO2 layer.

[0067] Comparative Example 1 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this example is the same as that in Example 1, except that in step (1), dimethyl sulfide complex of borane is not added.

[0068] Comparative Example 2 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this example is the same as that in Example 10, except that in step (1), dimethyl sulfide complex of borane is not added.

[0069] Comparative Example 3 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this example is the same as that in Example 11, except that in step (1), dimethyl sulfide complex of borane is not added.

[0070] Comparative Example 4 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this example is the same as that in Example 1, except that in step (1), the dimethyl sulfide complex of borane and the n-butyl ether solution of perhydropolysilazane with a mass fraction of 10% are mixed at a silicon-boron element molar ratio of 30:1.

[0071] Comparative Example 5 The method for stress regulation of the SiO2 layer based on the silicon-containing polymer in this example is the same as that in Example 1, except that in step (1), the temperature of the heating reaction is 20 °C and the stirring time is 48 h.

[0072] Test Example 1 The thickness of the films before the annealing treatment in Steps (2) of Examples 1-14 and Comparative Examples 1-5 was measured by an ellipsometer (M-2000V, J. A. Woollam), and the radius of curvature R1 was measured by a film stress meter (Toho FLX-2320-S). The thickness and radius of curvature R2 of the formed SiO2 layer after the annealing treatment were measured again. According to the thickness and curvature changes of the film before and after annealing, the shrinkage rate and stress during the film conversion process were calculated, and the results are shown in Table 1.

[0073] Shrinkage rate = (thickness before annealing - thickness after annealing) / thickness before annealing × 100%; The stress calculation formula is as follows: ; where σ is the average stress of the dielectric layer (Pa); E / (1 - ν) is the biaxial elastic modulus of the substrate. For a 100-crystalline silicon wafer, its value is 1.805×10 11 Pa; h is the substrate thickness (m); T is the dielectric layer thickness (m); R is the radius of curvature (m).

[0074] ; Note: In Table 1, negative stress values represent compressive stress, and positive stress values represent tensile stress.

[0075] Compared with Example 1, for Comparative Example 1, compared with Example 10 for Comparative Example 2, and compared with Example 11 for Comparative Example 3, the stress of the SiO2 layer obtained without B doping showed tensile stress. From the comparison of Examples 1-6, it can be seen that as the B doping amount increases, that is, the Si / B ratio decreases, the stress of the SiO2 layer decreases, and the stress of the SiO2 layer can be freely adjusted. Moreover, Example 3 shows that after the Si / B ratio is less than 5, the stress state of the dielectric layer changes from tensile stress to compressive stress, and the stress increases as the Si / B ratio decreases. In addition, from the examples and comparative examples, it can be seen that the solvent type, heat preservation temperature, and reaction conditions all have certain effects on the shrinkage rate and stress of the dielectric layer. Generally speaking, a larger shrinkage rate will show tensile stress, and a smaller shrinkage rate may show compressive stress.

[0076] The shrinkage rate of the SiO2 layer prepared by the present invention is 14.5~18.9%, and the stress is -29.7~66.3 MPa.

[0077] Test Example 2 The methods of Example 3 and Comparative Example 1 were respectively applied to the filling of the trench structure. The trench structure to be filled had a depth of 500 nm, a width of 100 nm, and a period of 200 nm. The specific filling process was as follows: The boron-modified silicon-containing polymer precursor prepared in Example 3 and Comparative Example 1 was spin-coated on the trench wafer (silicon wafer) by spin coating, and then successively passed through the baking and high-temperature annealing steps as described in Example 3 to complete the filling of the trench structure. The filling effect of Example 3 was as Figure 2 shown. Since the stress was low, there were no obvious defects such as separation and pores in the filling layer. The filling effect of Comparative Example 1 was as Figure 3 shown, and there was an obvious interfacial separation phenomenon, which was caused by its excessive stress.

[0078] The above tests were carried out on other examples and comparative examples of the present invention, and the results were basically the same. Due to limited space, they will not be listed one by one.

[0079] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed by the present invention should be covered by the protection scope of the present invention.

Claims

1. A method for stress regulation of SiO2 layer based on silicon-containing polymer, characterized in that It includes the following steps: (1) Under an inert atmosphere, react a solution of a boron-containing compound and a silicon-containing polymer to obtain a boron-modified silicon-containing polymer precursor; (2) Add a catalyst to the boron-modified silicon-containing polymer precursor, mix, coat and form a film on a substrate, bake, and perform a thermal annealing treatment to obtain the SiO2 layer.

2. The stress regulation method of the SiO2 layer based on the silicon-containing polymer according to claim 1, wherein In step (1), the structural formula of the silicon-containing polymer is as follows: ； Among them, R1, R2, and R3 are each independently selected from one of H, halogen, C1-C6 aliphatic hydrocarbons and their derivatives, and C6-C12 aromatic hydrocarbons and their derivatives, and the value of n is 20-1000.

3. The method for regulating the stress of the SiO2 layer based on the silicon-containing polymer according to claim 2, wherein The weight-average molecular weight Mw of the silicon-containing polymer is 2000-50000 g / mol, and the PDI is 2-10.

4. The method for stress regulation of the SiO2 layer based on the silicon-containing polymer according to any one of claims 1-3, characterized in that, In step (1), the boron-containing compound includes one or more of boric acid, sodium borate, borane complex, trimethyl borate, triborane, tetraborane, boron tetrafluoride, boron trifluoride, boron chloride, boron trichloride, boron dichloride, boron fluoride, sodium borohydride, perboric acid, phenylboronic acid, triphenylboron.

5. The method for stress regulation of the SiO2 layer based on the silicon-containing polymer according to any one of claims 1-3, characterized in that, In step (1), the mass fraction of the silicon-containing polymer in the solution of the silicon-containing polymer is 1-100%.

6. The method for stress regulation of the SiO2 layer based on a silicon-containing polymer according to claim 1, wherein, In step (1), the specific reaction is as follows: Stir and mix the solution of the silicon-containing polymer and the boron-containing compound evenly until no bubbles are generated, then heat for reaction until bubbles are generated again in the solution, and stir to obtain a boron-modified silicon-containing polymer precursor.

7. The method for stress regulation of the SiO2 layer based on the silicon-containing polymer according to claim 6, characterized in that, The temperature of the heating reaction is 30-120 °C, and the stirring time is 0.1-24 h.

8. The method for regulating the stress of the SiO2 layer based on a silicon-containing polymer according to claim 1, characterized in that, In step (1), the molar ratio of the Si element in the silicon-containing polymer to the B element in the boron-containing compound is 0.5:1-20:

1.

9. The method for regulating the stress of the SiO2 layer based on a silicon-containing polymer according to claim 1, characterized in that, In step (2), the mass fraction of the catalyst in the boron-modified silicon-containing polymer precursor is 0-1%.

10. An electronic device, characterized in that, It includes the SiO2 layer obtained by the method according to any one of claims 1-9.

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