Method for purifying metal oxide, photoelectric device comprising metal oxide and electronic equipment

Abstract

The invention provides a purification method of a metal oxide, a photoelectric device comprising the metal oxide and electronic equipment, in the purification method of the metal oxide, a first amine compound and a second amine compound are sequentially adopted to carry out ligand exchange on the metal oxide, so that the metal oxide is converted into an oil-phase metal oxide, therefore, impurities dissolved in the polar solvent are removed, and the purity of the metal oxide is improved; when the metal oxide prepared by the purification method of the metal oxide is applied to a photoelectric device, the service life of the photoelectric device is prolonged, and the performance stability of the photoelectric device is improved.

Description

Technical Field

[0001] The present application relates to the field of metal oxide synthesis, and particularly relates to a purification method of metal oxides, a optoelectronic device including metal oxides, and an electronic device. Background Art

[0002] Metal oxides refer to compounds formed by the combination of metal elements and oxygen elements. After the metal oxides are nano-sized, due to their small size, large specific surface area, and many surface active centers, metal oxides have small size effect, surface and interface effect, quantum dot size effect, and macroscopic quantum tunneling effect, and thus are widely used in high-efficiency catalysts, batteries, light-emitting devices, supercapacitors, energy storage devices, magnetic devices, and optical devices.

[0003] In the related art, the solution method is one of the preparation methods of metal oxides. The impurity content of the metal oxides prepared by the solution method is relatively high, and the impurities mainly come from metal precursors and solvents, resulting in poor performance stability of the metal oxides in practical applications. Summary of the Invention

[0004] The present application provides a purification method of metal oxides, a optoelectronic device including metal oxides, and an electronic device to improve the purity of the metal oxides prepared by the solution method.

[0005] The technical solution of the present application is as follows:

[0006] In the first aspect, the present application provides a purification method of metal oxides, including the following steps:

[0007] Providing a dispersion liquid containing metal oxides, mixing the dispersion liquid and a first amine compound to carry out a first reaction to obtain a first reaction product;

[0008] Performing a first solid-liquid separation on the first reaction product, and collecting the obtained solid;

[0009] Mixing the collected solid and a second amine compound to carry out a second reaction to obtain a second reaction product, and then performing a second solid-liquid separation on the second reaction product, and collecting the solid again to obtain purified metal oxides;

[0010] Wherein, the second reaction is carried out at least once, and / or the second solid-liquid separation is carried out at least once.

[0011] In the second aspect, the present application provides a metal oxide, which is prepared by using the purification method of the metal oxide as described in the first aspect.

[0012] In the third aspect, the present application provides an optoelectronic device, which includes:

[0013] A first electrode and a second electrode which are oppositely arranged; and

[0014] A functional layer disposed between the first electrode and the second electrode;

[0015] Wherein, the functional layer includes a plurality of functionally sub - layers arranged in a stacked manner; the material of at least one of the functionally sub - layers includes a metal oxide prepared by the purification method of the metal oxide as described in the first aspect, or the metal oxide as described in the second aspect.

[0016] In a fourth aspect, the present application provides an electronic device, and the electronic device includes a optoelectronic device as described in the third aspect.

[0017] The present application provides a purification method of a metal oxide, an optoelectronic device including the metal oxide, and an electronic device, having the following technical effects:

[0018] In the purification method of the metal oxide, a first amine compound and a second amine compound are sequentially used for ligand exchange of the metal oxide to convert the metal oxide into an oil - phase metal oxide, thereby removing impurities (such as metal precursors, intermediate products, etc.) soluble in polar solvents, improving the purity of the metal oxide, which is beneficial to enhancing the performance stability of the metal oxide, and improving the efficiency and lifespan of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0020] Figure 1 is a flow schematic diagram of a purification method of a metal oxide provided by the present application.

[0021] Figure 2 is a structural schematic diagram of an optoelectronic device provided by the present application.

[0022] Figure 3 is the ultraviolet - visible absorption spectrogram of ZnO prepared in Metal Oxide Example 1 to Metal Oxide Example 3, Metal Oxide Comparative Example 1, and Metal Oxide Comparative Example 2 in Experimental Example 1.

[0023] The reference numerals are as follows:

[0024] 10: Photoelectric device, 101: First electrode, 102: Second electrode, 103: Functional layer, 1031: Electron functional layer, 1032: Hole functional layer, 1033: Light-emitting layer, 10321: Hole injection layer, 10322: Hole transport layer. Detailed implementation manners

[0025] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0026] Unless otherwise defined, all professional and scientific terms used herein have the same meaning as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to the described content can be applied to the present application. The preferred implementation methods and materials described herein are only for demonstration purposes and do not limit the content of the present application.

[0027] It should be noted that the description order of the following embodiments does not limit the preferred order of the embodiments. The various embodiments of the present application may exist in a range form; it should be understood that the description in a range form is only for convenience and simplicity and should not be construed as a rigid limitation on the scope of the present application; therefore, it should be considered that the described range description has specifically disclosed all possible sub-ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the counted range, such as 1, 2, 3, 4, 5, and 6, which applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0028] The term "comprising" means "including but not limited to".

[0029] The term "at least one" means one or more, and "a plurality" means two or more. The term "at least one", "at least one of the following items (pieces)" or similar expressions refer to any combination of these items, including any combination of single items (pieces) or plural items (pieces). For example, "at least one of a, b, or c" or "at least one of a, b, and c" can both be expressed as: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0030] The selection range of the term "and / or" includes any one of two or more related listed items, and also includes any and all combinations of the related listed items. The any and all combinations include combinations of any two related listed items, any more related listed items, or all related listed items. For example, "A and / or B" includes three parallel solutions: A, B, and A + B. Another example is the technical solution of "A, and / or, B, and / or, C, and / or, D", which includes any one of A, B, C, and D (i.e., the technical solutions connected by "logical or"), and also includes any and all combinations of A, B, C, and D, that is, combinations of any two or any three of A, B, C, and D, and also includes the four-item combination of A, B, C, and D (i.e., the technical solutions connected by "logical and").

[0031] The term "particle size" refers to the diameter of nanoparticles.

[0032] The term "solid-liquid separation" refers to an operation that can separate the solid phase and the liquid phase in a mixture from each other, including but not limited to one or more of sedimentation, filtration, and evaporation. Sedimentation includes but not limited to one or more of gravitational sedimentation, centrifugal sedimentation, and electromagnetic sedimentation. Filtration separation includes but not limited to one or more of reverse osmosis, membrane filtration, nanofiltration, ultrafiltration, and microfiltration.

[0033] In this application, descriptions such as "layer A is formed on one side of layer B", "layer A is formed on the side of layer B away from layer C", or similar descriptions can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or it can mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacer structure layers can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B", "layer A is disposed on the side of layer B away from layer C" can mean that layer A is in direct contact with layer B, or it can mean that other spacer structure layers are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can mean that layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and layer A is in direct contact with layer C.

[0034] In the present application, "amino group" refers to a group with the general formula -NR’R”, where R’ and R” are each independently selected from but not limited to a hydrogen atom, a deuterium atom, a cyano group, an isocyano group, a nitro group, a halogen atom, a straight-chain alkyl group having 1 to 10 carbon atoms, a branched-chain alkyl group or a cycloalkyl group having 3 to 10 carbon atoms, an aliphatic cycloalkenyl group having 3 to 10 ring atoms, a heteroalicyclic group having 3 to 10 ring atoms, an aromatic group having 6 to 14 ring atoms, a heteroaryl group having 5 to 14 ring atoms, a silyl group, a carbonyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, a carbamoyl group, a halocarbonyl group, a formyl group, an isocyanate group, a thiocyanate group, an isothiocyanate group, a hydroxyl group, a trifluoromethyl group, and the above groups may also be further substituted by substituents acceptable in the art.

[0035] The term "aliphatic hydrocarbon group" refers to an aliphatic straight-chain hydrocarbon group or an aliphatic branched-chain hydrocarbon group. "Aliphatic hydrocarbon group having 5 to 30 carbon atoms" may be, for example, a straight-chain alkyl group having 5 to 30 carbon atoms, a straight-chain alkenyl group having 5 to 30 carbon atoms, a straight-chain alkynyl group having 5 to 30 carbon atoms, a branched-chain alkyl group having 5 to 30 carbon atoms, a branched-chain alkenyl group having 5 to 30 carbon atoms, or a branched-chain alkynyl group having 5 to 30 carbon atoms. The number of carbon atoms in the aliphatic hydrocarbon group may be, for example, 5 to 8, 5 to 10, 5 to 15, 5 to 20, or 10 to 20, and examples are 5, 8, 10, 15, 20, 25, 30, or a value between any two of the foregoing values.

[0036] The term "aliphatic hydrocarbonoxy" refers to a group with the general formula *-O-aliphatic hydrocarbon group, where * represents the connection site and O represents an oxygen atom.

[0037] The term "aliphatic cycloalkenyl group" refers to an aliphatic cyclic hydrocarbon group. The number of ring atoms in "aliphatic cycloalkenyl group having 3 to 30 ring atoms" may be, for example, 3 to 5, 3 to 8, 3 to 10, 3 to 14, 3 to 20, or 5 to 10, and examples are 3, 5, 6, 8, 10, 14, 20, 24, 28, 30, or a value between any two of the foregoing values. Suitable examples include but are not limited to cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or adamantyl.

[0038] The term "aliphatic heterocyclic hydrocarbon group" refers to a group in which at least one carbon atom in an aliphatic cyclic hydrocarbon group is replaced by a non-carbon atom, and the non-carbon atom can be one or more of N atom, O atom, S atom, Si atom, and P atom. The number of ring atoms in the "aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms" can be, for example, 3 to 5, 3 to 8, 3 to 10, 3 to 14, 3 to 20, or 5 to 10, and examples are 3, 5, 6, 8, 10, 14, 20, 24, 28, 30, or a value between any two of the foregoing values.

[0039] The applicant has found that for the synthesis of metal oxides by the normal temperature solution method, the synthesis reaction generally occurs in a polar solvent environment, and the finally obtained metal oxides are dispersed in the polar solvent for storage, which has the disadvantage of high impurity content. Conventional cleaning means cannot remove impurities soluble in polar solvents (such as metal precursors, intermediate products, etc.), which has a negative impact on the performance stability of the metal oxides.

[0040] Based on this, the embodiments of the present application provide a purification method for metal oxides, as Figure 1 shown, the purification method of the metal oxides includes the following steps:

[0041] (A1) Provide a dispersion containing metal oxides, mix the dispersion with a first amine compound to carry out a first reaction, and obtain a first reaction product;

[0042] (A2) Carry out a first solid-liquid separation on the first reaction product, and collect the obtained solid;

[0043] (A3) Mix the collected solid with a second amine compound to carry out a second reaction, obtain a second reaction product, and then carry out a second solid-liquid separation on the second reaction product, and collect the solid again to obtain purified metal oxides.

[0044] In the purification method of the metal oxides in the embodiments of the present application, a first amine compound and a second amine compound are successively used for ligand exchange on the metal oxides (polar ligands are connected to the surface) so that the metal oxides are transformed into oil-phase metal oxides, thereby removing impurities soluble in polar solvents (such as metal precursors, intermediate products, etc.), improving the purity of the metal oxides, and thus being beneficial to improving the performance stability of the metal oxides.

[0045] In step A1, the dispersion medium of the dispersion liquid is a polar organic solvent. The dispersion liquid can be obtained by dispersing metal oxides prepared by the room-temperature solution method in a polar organic solvent. The first reaction can be carried out at room temperature and normal pressure. It should be noted that since the surface of the metal oxides prepared by the room-temperature solution method is usually connected with polar ligands containing carboxyl groups and / or hydroxyl groups, the metal oxides prepared by the room-temperature solution method are soluble in the polar organic solvent.

[0046] In some embodiments of the present application, to improve the solubility of metal oxides in the dispersion medium, the polarity value of the dispersion medium of the dispersion liquid is 4 to 10, for example, 4, 6, 8, 10 or a value between any two of the foregoing values. As an example, the dispersion medium of the dispersion liquid is selected from one or more of methanol, ethanol, ethylene glycol, acetonitrile, dimethylformamide, and dimethyl sulfoxide.

[0047] In some embodiments of the present application, to promote the precipitation of metal oxides in the dispersion liquid, the step of mixing the dispersion liquid and the first amine compound in step A1 to carry out the first reaction includes: providing a first solution containing the first amine compound, and the solvent of the first solution is an aliphatic alcohol compound with 1 to 8 carbon atoms. Examples of the solvent of the first solution are methanol and / or ethanol.

[0048] In step (A2), the solid-liquid separation is exemplified by centrifugation. In some embodiments of the present application, to further improve the purity of the metal oxides, after the step of collecting the obtained solid and before the step of mixing the collected solid and the second amine compound, the purification method of the metal oxides further includes the step of: dispersing the collected solid in an aliphatic alkane with 5 to 20 carbon atoms, then performing solid-liquid separation, and then collecting the obtained solid. Examples of the aliphatic alkane with 5 to 20 carbon atoms are n-heptane.

[0049] In some embodiments of the present application, the step of providing the first dispersion liquid containing metal oxides includes the following steps:

[0050] S11. Provide a second solution containing a metal precursor and a third solution containing a base;

[0051] S12. Mix the second solution and the third solution to carry out a third reaction to obtain a first dispersion liquid.

[0052] In step S11, the metal element of the metal precursor is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals, and transition metals. Examples of the metal element of the metal precursor are selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ca, Ga, Li, Y, In, Ni, Mo, W, V, Cr, and Cu.

[0053] The metal precursor can be an inorganic salt or an organometallic compound. The anions constituting the inorganic salt include, but are not limited to, halide ions, sulfate ions, carbonate ions, nitrate ions, phosphate ions, monohydrogen phosphate ions, or dihydrogen phosphate ions. Taking the metal element in the metal precursor as Zn for example, the selectable inorganic salts include, but are not limited to, one or more of zinc halides, zinc nitrate, zinc sulfate, zinc carbonate, and zinc phosphate. The organometallic compound can be one or more of organic salts and organic complexes. The anions constituting the organic salt include, but are not limited to, carboxylate ions with 2 to 20 carbon atoms. The carboxylate ions with 2 to 20 carbon atoms can be, for example, oxalate ions, acetate ions, citrate ions, lactate ions, stearate ions, myristate ions, or oleate ions. Taking the metal element in the metal precursor as Zn for example, the organic salts include, but are not limited to, one or more of zinc stearate, zinc acetate, zinc myristate, zinc oleate, zinc citrate, and zinc lactate, and the organic complexes include, but are not limited to, zinc acetylacetonate. The concentration of the metal precursor in the second solution is, for example, 0.01 mmol / mL to 0.5 mmol / mL.

[0054] In step S11, the base includes one or more of organic bases and inorganic bases. The inorganic bases include, but are not limited to, one or more of alkali metal oxides, alkali metal hydroxides, alkali metal bicarbonates, alkali metal carbonates, alkaline earth metal oxides, alkaline earth metal hydroxides, alkaline earth metal bicarbonates, barium hydroxide, and ammonia water. The inorganic bases are, for example, selected from one or more of lithium hydroxide, sodium hydroxide, potassium hydroxide, calcium hydroxide, sodium oxide, potassium oxide, calcium oxide, sodium carbonate, sodium bicarbonate, potassium carbonate, potassium bicarbonate, and calcium bicarbonate. The organic bases include, but are not limited to, one or more of alkanolamine compounds, alkylammonium hydroxides, and urea. The alkyl in the alkylammonium hydroxide contains 1 to 20 carbon atoms. Among them, the alkylammonium hydroxides are, for example, selected from one or more of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and tetrabutylammonium hydroxide, and the alkanolamine compounds are, for example, selected from one or more of ethanolamine, diethanolamine, and triethanolamine.

[0055] The solvents of the second solution and the third solution are independently selected from one or more of water, alkanes, aromatic hydrocarbons, halogenated hydrocarbons, alcohol compounds, ether compounds, furan compounds, pyridine compounds, amide compounds, and sulfone compounds. In order to further improve the purification effect of the metal oxide, in some embodiments of the present application, the solvents of the second solution and the third solution are independently selected from organic solvents with a polarity value of 4 to 10, for example, independently selected from one or more of methanol, ethanol, ethylene glycol, acetonitrile, dimethylformamide, and dimethyl sulfoxide.

[0056] In step S12, the step of mixing the second solution and the third solution may be adding the second solution to the third solution or adding the third solution to the second solution. For example, the third solution is added to the second solution by dropping or injecting with a syringe, or the second solution is added to the third solution by dropping or injecting with a syringe, so as to control the nucleation rate and nucleation quality of crystallization.

[0057] In step S12, the third reaction may be carried out in an atmosphere of an inert gas, and the inert gas includes but is not limited to nitrogen, helium, argon, krypton, xenon or neon. In some embodiments of the present application, the third reaction is carried out at a temperature of 25°C to 80°C, such as 25°C, 30°C, 40°C, 50°C, 60°C, 70°C, 80°C or a value between any two of the foregoing values, and / or the reaction time of the third reaction is 1 h to 5 h.

[0058] In order to further improve the yield of the metal oxide, in some embodiments of the present application, the molar ratio of the metal precursor to the base is 1:(0.8 - 5), for example, it may be 1:0.8, 1:1, 1:2, 1:3, 1:4, 1:5 or a value between any two of the foregoing ratios.

[0059] In order to further improve the purity of the metal oxide, in some embodiments of the present application, before the step of obtaining the first dispersion liquid and after the third reaction, the step of providing the first dispersion liquid containing the metal oxide further includes: washing the product obtained by the third reaction successively with a first cleaning agent and a second cleaning agent. The first cleaning agent is selected from those having the general formula R2COOR3, where R2 and R3 are respectively selected from alkyl groups having 1 to 5 carbon atoms. The polarity of the first cleaning agent is, for example, weaker than that of methyl acetate, and the first cleaning agent is exemplified by ethyl acetate; the second cleaning agent is selected from alkanes having 5 to 16 carbon atoms, and may be, for example, one or more of n-pentane, isopentane, cyclopentane, hexane, cyclohexane, n-heptane, n-octane, isooctane, trimethylpentane, n-nonane, n-decane, n-undecane, n-dodecane, n-tridecane, n-tetradecane, n-pentadecane and n-hexadecane.

[0060] Further, the step of successively washing the product obtained by the third reaction with the first cleaning agent and the second cleaning agent, for example, includes: adding the first cleaning agent to the product obtained by the third reaction, then performing solid-liquid separation and collecting the precipitate; then, dispersing the precipitate in a polar organic solvent (such as an alcohol compound having 1 to 3 carbon atoms), adding the second cleaning agent (the volume ratio of the second cleaning agent to the polar organic solvent is greater than 2:1), and performing solid-liquid separation again and collecting the precipitate. It should be noted that by dispersing the finally collected precipitate in the polar organic solvent, a dispersion liquid containing the metal oxide is obtained.

[0061] Continuing with steps (A1) to (A3), the first amine compound and the second amine compound are each independently selected from the compounds represented by the following general formula (I):

[0062]

[0063] In general formula (I), R1 to R3 are each independently selected from hydrogen, a substituted or unsubstituted hydrocarbon group having 5 to 20 carbon atoms, a substituted or unsubstituted hydrocarbon oxy group having 5 to 20 carbon atoms, a substituted or unsubstituted aliphatic cyclo hydrocarbon group having 3 to 20 ring atoms, a substituted or unsubstituted aliphatic heterocyclic hydrocarbon group having 3 to 20 ring atoms, or a combination of these groups. Among them, the heteroatoms in the aliphatic heterocyclic hydrocarbon group are each independently selected from one or more of N, S, O, P, and Si, and the number of heteroatoms in the aliphatic heterocyclic hydrocarbon group is independently 1 to 20. At least one of R1 to R3 is not hydrogen.

[0064] Furthermore, at least one of R1 to R3 is selected from an amino-substituted or unsubstituted hydrocarbon group having 8 to 20 carbon atoms, an amino-substituted or unsubstituted hydrocarbon oxy group having 8 to 20 carbon atoms, an amino-substituted or unsubstituted aliphatic cyclo hydrocarbon group having 3 to 20 ring atoms, an amino-substituted or unsubstituted aliphatic heterocyclic hydrocarbon group having 3 to 20 ring atoms, or a combination of these groups.

[0065] In order to further improve the purification effect of the metal oxide, in some embodiments of the present application, the first amine compound and the second amine compound are each independently selected from one or more of dodecylamine, tetradecylamine, hexadecylamine, octadecylamine, oleylamine, and eicosylamine.

[0066] In step (A1), the role of the first amine compound is to coordinate and connect to the surface of the metal oxide and remove the impurities adsorbed on the surface of the metal oxide that are soluble in polar solvents. The amount of the first amine compound used is in excess relative to the metal oxide to ensure that the metal oxide is transformed into an oil-phase metal oxide. In some embodiments of the present application, the molar ratio of the metal oxide to the first amine compound is 1:(10 - 50), for example, it can be 1:10, 1:20, 1:30, 1:40, 1:50, or a value between any two of the foregoing ratios.

[0067] The second reaction in step (A3) is carried out at least once, and / or the second solid-liquid separation is carried out at least once. In step (A3), the role of the second amine compound is to coordinately bond to the surface of the metal oxide to further remove the impurities adsorbed on the surface of the metal oxide and soluble in polar solvents. The amount of the second amine compound used is in excess relative to the metal oxide. In some embodiments of the present application, the molar ratio of the metal oxide to the second amine compound is 1:(15-50), for example, it can be 1:15, 1:20, 1:30, 1:40, 1:50 or a value between any two of the foregoing ratios.

[0068] In order to further improve the purity of the metal oxide, in some embodiments of the present application, the second reaction is carried out under the condition of 120°C to 180°C, for example, it can be 120°C, 140°C, 160°C, 180°C or a value between any two of the foregoing values; and / or the time of the second reaction is 1 h to 3 h, for example, it can be 1 h, 2 h, 3 h or a value between any two of the foregoing values, so as to promote the shedding of the impurities bonded to the surface of the metal oxide.

[0069] The embodiments of the present application also provide a metal oxide, and the metal oxide can be prepared by using the purification method of any one of the metal oxides described above.

[0070] In some embodiments of the present application, the metal oxide is nano-spherical, and the average particle size of the metal oxide is 2 nm to 15 nm, for example, it is 2 nm, 5 nm, 8 nm, 10 nm, 12 nm, 15 nm or a value between any two of the foregoing values.

[0071] In some embodiments of the present application, the metal oxide is doped or undoped; wherein, the undoped metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, NiO, MoO3, WO3, V2O5, Cr2O3, CuO or Cu2O, and / or the doped metal oxide is a host metal oxide doped with a first doping element, the host metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, NiO, MoO3, WO3, V2O5, Cr2O3, CuO or Cu2O, the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, Ni, Mo, V, Cr and Cu, and the molar amount of the first doping element accounts for no more than 50% of the total molar amount of the doped metal oxide.

[0072] The embodiments of the present application also provide an optoelectronic device, and the optoelectronic device includes but is not limited to a light-emitting device, a photovoltaic cell or a photodetector, such as Figure 2As shown, the optoelectronic device 10 includes a first electrode 101, a second electrode 102, and a functional layer 103. The functional layer 103 is disposed between the first electrode 101 and the second electrode 102. Among them, the functional layer 103 includes a plurality of stacked functional sub-layers. The plurality of functional sub-layers include, but are not limited to, one or more of an electron functional layer and a hole functional layer. The material of at least one of the functional sub-layers includes a metal oxide prepared by any one of the purification methods of the metal oxides described above, or a metal oxide such as any one of the metal oxides described above.

[0073] In the optoelectronic device according to the embodiment of the present application, the material of at least one functional sub-layer includes a metal oxide prepared by any one of the purification methods of the metal oxides described above, or a metal oxide such as any one of the metal oxides described above. The metal oxide has high purity and good chemical stability, thereby improving the performance stability of the functional sub-layer, and further enhancing the device life and performance stability of the optoelectronic device.

[0074] In some embodiments of the present application, the materials of the first electrode 101 and the second electrode 102 are independently selected from one or more of metals, carbon materials, and metal oxide materials. Among them, the metals include, but are not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg. The carbon materials include, but are not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxide materials can be doped or undoped. The doped metal oxide materials include, but are not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), and magnesium-doped zinc oxide (MZO). The undoped metal oxide materials include, but are not limited to, one or more of TiO2, SnO2, ZnO, and In2O3.

[0075] In some embodiments of the present application, continue to refer to Figure 2 , the plurality of functional sub-layers include an electron functional layer 1031. The material of the electron functional layer 1031 includes a metal oxide prepared by any one of the purification methods of the metal oxides described above, or a metal oxide such as any one of the metal oxides described above. Among them, the metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, magnesium zinc oxide, calcium zinc oxide, zirconium zinc oxide, gallium zinc oxide, aluminum zinc oxide, lithium zinc oxide, titanium zinc oxide, yttrium zinc oxide, indium tin oxide, and lithium titanium oxide.

[0076] It should be noted that the electronic functional layer 1031 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 1031 is, for example, 10 nm to 100 nm. When the electronic functional layer 1031 is a multi-layer structure, the electronic functional layer 1031 includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 1031 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, one of the first electrode 101 and the second electrode 102 is an anode and the other is a cathode, and the electron injection layer is closer to the cathode than the hole blocking layer; for the electronic functional layer 1031 including an electron transport layer and a hole blocking layer, the electron transport layer is closer to the cathode than the hole blocking layer; for the electronic functional layer 1031 including an electron injection layer and an electron transport layer, the electron injection layer is closer to the cathode than the electron transport layer. When the electronic functional layer 1031 is a multi-layer structure, the material of one layer, some layers, or all layers thereof may include the metal oxide prepared by any one of the purification methods of the metal oxides described above, or the metal oxide as described in any one of the above, for example, the material of the layer closest to the cathode may include the metal oxide prepared by any one of the purification methods of the metal oxides described above, or the metal oxide as described in any one of the above.

[0077] In some embodiments of the present application, with continued reference to Figure 2 , the plurality of functional sub-layers include a hole functional layer 1032, and the material of the hole functional layer 1032 includes the metal oxide prepared by any one of the purification methods of the metal oxides described above, or the metal oxide as described in any one of the above. Among them, the metal oxide is selected from one or more of NiO, MoO3, WO3, V2O5, Cr2O3, CuO, and Cu2O.

[0078] It should be noted that the hole functional layer 1032 can be a single-layer structure or a multi-layer structure, and the thickness of the hole functional layer 1032 is, for example, 10 nm to 100 nm. When the hole functional layer 1032 is a multi-layer structure, the hole functional layer 1032 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 1032 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer. One of the first electrode 101 and the second electrode 102 is an anode and the other is a cathode, and the hole injection layer is closer to the anode than the electron blocking layer. For the hole functional layer 1032 including a hole transport layer and an electron blocking layer, the hole transport layer is closer to the anode than the electron blocking layer. For the hole functional layer 1032 including a hole injection layer and a hole transport layer, the hole injection layer is closer to the anode than the hole transport layer. When the hole functional layer 1032 is a multi-layer structure, the material of one layer, some layers, or all layers thereof may include the metal oxide prepared by any one of the purification methods of the metal oxides described above, or the metal oxide as described in any one of the above.

[0079] In some other embodiments of the present application, the material of the hole functional layer does not include the metal oxide prepared by any of the purification methods of the metal oxides described above, or any of the metal oxides described above. The material of the hole functional layer 1032 includes, but is not limited to, one or more of an undoped first inorganic compound, a doped second inorganic compound, and an organic compound. Among them, the organic compound includes, but is not limited to, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (abbreviation: PEDOT:PSS, CAS number 155090-83-8), copper phthalocyanine (CAS number 147-14-8), titanium oxyphthalocyanine (CAS number 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (CAS number 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS number 105598-27-4), polyaniline (CAS number 25233-30-1), polypyrrole (CAS number 30604-81-0), 3-hexyl-substituted polythiophene (CAS number 104934-50-1), poly(9-vinylcarbazole) (abbreviation: PVK, CAS number 25067-59-8), 4,4'-bis(9-carbazolyl)biphenyl (abbreviation: CBP, CAS number 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviation: TAPC, CAS number 58473-78-2), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviation: TFB, CAS number 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorene-2,7-diyl)] (CAS number 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS number 124729-98-2), 4,4',4”-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA, CAS number 139092-78-7), 4,4',4'-tris(2-naphthylphenylamino)triphenylamine (CAS number 185690-41-9), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: NPB, CAS number 123847-85-8), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: TPD, CAS number 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,One or more of N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviation: Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (abbreviation: PTTA, CAS No. 1333317-99-9), and 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (abbreviation: Spiro-omeTAD, CAS No. 207739-72-8); and / or, the non-doped first inorganic compound includes but is not limited to one or more of graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), p-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2), and tungsten sulfide (such as WS2); and / or, the doped second inorganic compound is a host inorganic compound doped with a second doping element, and the host inorganic compound includes but is not limited to one or more of graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), p-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2), and tungsten sulfide (such as WS2), and / or the second doping element includes but is not limited to one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.,

[0080] It can be understood that when the hole functional layer 1032 contains multiple materials and the hole functional layer 1032 is a multi-layer structure, the multiple materials can all be in the same layer, or in different layers respectively, or partially in the same layer. For example, as Figure 2 shown, when the hole functional layer 1032 is composed of a hole injection layer 10321 and a hole transport layer 10322 arranged in a stacked manner, the materials of the hole functional layer 1032 include PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers respectively, the material of the hole injection layer 10321 is PEDOT:PSS, and the material of the hole transport layer 10322 is TFB.

[0081] In some embodiments of the present application, the optoelectronic device 10 is a light-emitting device, and the plurality of functional sub-layers include a light-emitting layer. For the optoelectronic device 10 including a hole functional layer and an electron functional layer, the light-emitting layer is disposed between the hole functional layer and the electron functional layer, and the hole functional layer is closer to the anode than the electron functional layer. For example, continue to refer to Figure 2 , the optoelectronic device 10 is a normal structure, the first electrode 101 is an anode and the second electrode 102 is a cathode. In the linear direction from the first electrode 101 to the second electrode 102, the hole functional layer 1032, the light-emitting layer 1033, and the electron functional layer 1031 are sequentially disposed.

[0082] Among them, the material of the light-emitting layer 1033 includes one or more of an organic light-emitting material and a light-emitting quantum dot. Among them, the organic light-emitting material includes, but is not limited to, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, thermally activated delayed materials, polymers containing B-N covalent bonds, hybrid local charge transfer excited state materials, exciplex luminescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, etc. One or more of them.

[0083] The light-emitting quantum dots include, but are not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and the light-emitting quantum dots include, but are not limited to, one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The core-shell structure quantum dots include one or more shell layers. The average particle size of the light-emitting quantum dots can be 2 nm to 20 nm, for example, it can be 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 15 nm, 20 nm, or a value between any two of the foregoing values.

[0084] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell quantum dots, or the material of the shell of the core-shell quantum dots includes but is not limited to at least one of II-VI group compounds, III-V group compounds, III-VI group compounds, IV-VI group compounds, or I-III-VI group compounds. Among them, the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the III-VI group compounds are selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the I-III-VI group compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.It should be noted that for the materials of the aforementioned single-component quantum dots, or the cores of core-shell quantum dots, or the shells of core-shell quantum dots, the chemical formulas provided only indicate the elemental composition and do not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements, Cd, Zn, and Se. If the content of each element is to be represented, it corresponds to Cd. x Zn 1-x Se, 0 < x < 1.

[0085] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + , M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0086] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, where C is formamidinium, M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0087] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, where B is selected from organic amine cations, and organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) nNH3 2+ (n≥2), M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0088] It should be noted that when the material of the light-emitting layer 1033 includes light-emitting quantum dots, ligands can also be connected to the surface of the light-emitting quantum dots. The ligands include but are not limited to C1-C 30 fatty carboxylic acid ligands, C6-C 30 aromatic carboxylic acid ligands, C1-C 30 fatty thiol ligands, C6-C 30 thiol aromatic ligands, C1-C 30 fatty amine ligands, C6-C 30 aromatic amine ligands, C1-C 30 fatty phosphine ligands, C6-C 30 aromatic phosphine ligands, and C6-C 30 aromatic phosphate ligands and one or more of halogen ligands.

[0089] Among them, the C1-C 30 fatty carboxylic acid ligands include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; the C6-C 30 aromatic carboxylic acid ligands include but are not limited to one or more of benzoic acid, dibenzoic acid, and 1-naphthoic acid. The C1-C 30 fatty thiol ligands include but are not limited to one or more of hexanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol, dodecanethiol, hexadecanethiol, and octadecanethiol, and the C6-C 30 thiol aromatic ligands include but are not limited to one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. The C1-C 30The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, octadecylamine, and oleylamine, C6-C 30 The aromatic amine ligands include, but are not limited to, one or more of aniline, indanylpropylamine, 4-octylaniline, and benzidine. C1-C 30 The fatty phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6-C 30 The aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, C6-C 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. The halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0090] It can be understood that the preparation methods of the respective functional sublayers in the optoelectronic device include, but are not limited to, chemical methods and / or physical methods. Among them, the chemical methods include, but are not limited to, one or more of chemical vapor deposition, sequential ionic layer adsorption and reaction, anodic oxidation, electrolytic deposition, and coprecipitation. The physical methods include, but are not limited to, physical coating methods and solution methods. The physical coating methods include, but are not limited to, one or more of thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. The solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating.

[0091] The embodiments of the present application also provide an electronic device, which includes any one of the optoelectronic devices in the embodiments of the present application. The electronic device can be, for example, any electronic product with a display function, including but not limited to smartphones, tablet personal computers, mobile phones, video telephones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, in-vehicle navigators, electronic billboards, automated teller machines, smart bracelets, smart watches, Virtual Reality (VR) devices or wearable devices.

[0092] The technical solutions and technical effects of the present application will be described in detail below through specific examples, comparative examples and experimental examples. The following examples are only partial examples of the present application and do not specifically limit the present application.

[0093] Example 1 of Metal Oxide

[0094] This example provides a purification method for metal oxides. The obtained metal oxide is ZnO in the form of nanoparticles. The purification method for the metal oxide includes the following steps:

[0095] S1.1: Provide a dispersion liquid containing ZnO: Dissolve 3 mmol of zinc acetate in 30 mL of dimethyl sulfoxide to obtain a second solution containing a zinc precursor; dissolve 3.3 mmol of lithium hydroxide in 30 mL of ethanol to obtain a third solution containing a base; under the condition of introducing nitrogen, inject the third solution into the second solution and mix and stir at 25 °C for 1 h for a third reaction. Then, add ethyl acetate to the reaction product, and then centrifuge at a rotation speed of 12,000 r / min for 5 min, remove the supernatant and collect the first precipitate. Then, disperse the first precipitate in ethanol, and then add n-heptane (the volume ratio of n-heptane to ethanol is 3:1). Then, centrifuge at a rotation speed of 12,000 r / min for 5 min, remove the supernatant and collect the second precipitate. Disperse the second precipitate in ethanol to obtain a dispersion liquid containing ZnO, and the concentration of ZnO in the dispersion liquid is 1 mol / L;

[0096] S1.2. At 25 °C, mix 1 mL of the dispersion and 10 mL of a dodecylamine - ethanol solution (the concentration of dodecylamine is 1 mol / L, and the CAS number of dodecylamine is 124 - 22 - 1) to form a precipitate. Centrifuge at 12000 r / min for 5 min, discard the supernatant and collect the precipitate. Then disperse the precipitate in n - heptane, and then add ethanol (the volume ratio of n - heptane to ethanol is 3:1). Centrifuge again at 12000 r / min for 5 min, discard the supernatant and collect the solid;

[0097] S1.3. Disperse the solid from step S1.2 in 4 mL of dodecylamine, then react at 120 °C for 1 h. Then add ethanol to the reaction product, and centrifuge at 12000 r / min for 5 min. Discard the supernatant and collect the precipitate, and the precipitate is purified ZnO.

[0098] Metal Oxide Example 2

[0099] This example provides a method for purifying a metal oxide, and the obtained metal oxide is nano - particulate ZnO. Compared with the method for purifying the metal oxide in Metal Oxide Example 1, the difference in the method for purifying the metal oxide in this example is that: replace "react at 120 °C for 1 h" in step S1.3 with "react at 120 °C for 2 h".

[0100] Metal Oxide Example 3

[0101] This example provides a method for purifying a metal oxide, and the obtained metal oxide is nano - particulate ZnO. Compared with the method for purifying the metal oxide in Metal Oxide Example 1, the difference in the method for purifying the metal oxide in this example is that: replace "react at 120 °C for 1 h" in step S1.3 with "react at 120 °C for 3 h".

[0102] Metal Oxide Example 4

[0103] This example provides a method for purifying a metal oxide, and the obtained metal oxide is nano - particulate ZnO. Compared with the method for purifying the metal oxide in Metal Oxide Example 1, the difference in the method for purifying the metal oxide in this example is that: replace "react at 120 °C for 1 h" in step S1.3 with "react at 180 °C for 1 h".

[0104] Metal Oxide Example 5

[0105] This embodiment provides a method for purifying metal oxides. The obtained metal oxide is ZnO in the form of nanoparticles. Compared with the method for purifying metal oxides in Embodiment 1 of metal oxides, the difference in the method for purifying metal oxides in this embodiment is that: in step S1.3, "react at 120 °C for 1 h" is replaced with "react at 100 °C for 1 h".

[0106] Metal Oxide Embodiment 6

[0107] This embodiment provides a method for purifying metal oxides. The obtained metal oxide is ZnO in the form of nanoparticles. Compared with the method for purifying metal oxides in Embodiment 1 of metal oxides, the difference in the method for purifying metal oxides in this embodiment is that: in step S1.3, "react at 120 °C for 1 h" is replaced with "react at 200 °C for 1 h".

[0108] Metal Oxide Embodiment 7

[0109] This embodiment provides a method for purifying metal oxides. The obtained metal oxide is ZnO in the form of nanoparticles. Compared with the method for purifying metal oxides in Embodiment 1 of metal oxides, the difference in the method for purifying metal oxides in this embodiment is that: in step S1.2, "10 mL of dodecylamine-ethanol solution" is replaced with "9 mL of dodecylamine-ethanol solution".

[0110] Metal Oxide Embodiment 8

[0111] This embodiment provides a method for purifying metal oxides. The obtained metal oxide is ZnO in the form of nanoparticles. Compared with the method for purifying metal oxides in Embodiment 1 of metal oxides, the difference in the method for purifying metal oxides in this embodiment is that: in step S1.2, "10 mL of dodecylamine-ethanol solution" is replaced with "50 mL of dodecylamine-ethanol solution".

[0112] Metal Oxide Embodiment 9

[0113] This embodiment provides a method for purifying metal oxides. The obtained metal oxide is ZnO in the form of nanoparticles. Compared with the method for purifying metal oxides in Embodiment 1 of metal oxides, the difference in the method for purifying metal oxides in this embodiment is that: in step S1.3, "4 mL of dodecylamine" is replaced with "3 mL of dodecylamine".

[0114] Metal Oxide 10

[0115] This embodiment provides a method for purifying metal oxides. The obtained metal oxide is nano-particle ZnO. Compared with the method for purifying metal oxides in Example 1 of metal oxides, the difference in the method for purifying metal oxides in this embodiment is that all "dodecylamine" in steps S1.1 to S1.3 is replaced with "tetradecylamine (CAS No. 2016-42-4)".

[0116] Example 11 of metal oxides

[0117] This embodiment provides a method for purifying metal oxides. The obtained metal oxide is nano-particle NiO. The method for purifying the metal oxide includes the following steps:

[0118] S2.1: Dissolve 3 mmol of nickel acetate in 30 mL of dimethyl sulfoxide to obtain a second solution containing a nickel precursor; dissolve 3.3 mmol of lithium hydroxide in 30 mL of ethanol to obtain a third solution containing a base; under the condition of introducing nitrogen, inject the third solution into the second solution, and mix and stir at 25 °C for 1 h to carry out a third reaction. Then, add ethyl acetate to the reaction product, and then centrifuge at a rotation speed of 12,000 r / min for 5 min. Remove the supernatant and collect the first precipitate. Then, disperse the first precipitate in ethanol, and then add n-heptane (the volume ratio of n-heptane to ethanol is 3:1). Then, centrifuge at a rotation speed of 12,000 r / min for 5 min. Remove the supernatant and collect the second precipitate. Disperse the second precipitate in ethanol to obtain a dispersion containing NiO, and the concentration of NiO in the dispersion is 1 mol / L;

[0119] S2.2: Refer to step S1.2 for operation.

[0120] S2.3: Refer to step S1.3 for operation.

[0121] Comparative Example 1 of metal oxides

[0122] This comparative example provides a method for purifying metal oxides. The obtained metal oxide is nano-particle ZnO. Compared with the method for purifying metal oxides in Example 1 of metal oxides, the difference in the method for purifying metal oxides in this comparative example is that steps S1.2 and S1.3 are omitted, and the second precipitate prepared in step S1.1 is the purified ZnO.

[0123] Comparative Example 2 of metal oxides

[0124] This comparative example provides a method for purifying metal oxides. The obtained metal oxide is ZnO in the form of nanoparticles. Compared with the method for purifying metal oxides in Example 1 of metal oxides, the difference in the method for purifying metal oxides in this comparative example is that: step S1.3 is omitted, and the precipitate after cleaning in step S1.2 is the purified ZnO.

[0125] Metal Oxide Comparative Example 3

[0126] This comparative example provides a method for purifying metal oxides. The obtained metal oxide is ZnO in the form of nanoparticles. Compared with the method for purifying metal oxides in Example 11 of metal oxides, the difference in the method for purifying metal oxides in this comparative example is that: steps S2.2 and S2.3 are omitted, and the second precipitate prepared in step S2.1 is the purified NiO.

[0127] Device Example 1

[0128] This example provides an optoelectronic device and a method for preparing the same. The optoelectronic device is a quantum dot light-emitting diode with a normal structure, as Figure 2 shown. The optoelectronic device 10 includes a first electrode 101, a hole functional layer 1032, a light-emitting layer 1033, an electron functional layer 1031, and a second electrode 102 that are sequentially stacked. Among them, the first electrode 101 is an anode and the second electrode 102 is a cathode; the hole functional layer 1032 is composed of a hole injection layer 10321 and a hole transport layer 10322 that are sequentially stacked, and the hole injection layer 10321 is closer to the first electrode 101 than the hole transport layer 10322; the electron functional layer 1031 is a single-layer structure. The light-emitting area of the optoelectronic device 10 is 0.04 cm 2 .

[0129] The materials and thicknesses of each layer in the optoelectronic device 10 are as follows:

[0130] The material of the first electrode 101 is ITO, and the average thickness of the first electrode 101 is 20 nm;

[0131] The material of the second electrode 102 is Ag, and the average thickness of the second electrode 102 is 40 nm;

[0132] The material of the light-emitting layer 1033 is Cd 0.4 Zn 0.6 Se (core) / ZnSe (intermediate shell) / ZnS (outer shell) quantum dots, the emission color is green, and the average thickness of the light-emitting layer 1033 is 30 nm;

[0133] The material of the electron functional layer 1031 is ZnO prepared in Metal Oxide Example 1, and the average thickness of the electron functional layer 1031 is 40 nm;

[0134] The material of the hole injection layer 10321 is PEDOT:PSS, and the average thickness of the hole injection layer 10321 is 20 nm;

[0135] The material of the hole transport layer 10322 is TFB, and the average thickness of the hole transport layer 10322 is 18 nm.

[0136] The preparation method of the optoelectronic device in this embodiment includes the following steps:

[0137] S10.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove visible impurities on the surface, and then ultrasonically clean the substrate including ITO in deionized water for 15 min, in acetone for 15 min, in ethanol for 15 min, and in isopropanol for 15 min in sequence. After drying, perform ultraviolet-ozone surface treatment for 20 min to obtain a substrate including a first electrode;

[0138] S10.2. Under the air environment of normal temperature and pressure, spin-coat PEDOT:PSS (CAS No. 155090-83-8) on the side of the first electrode away from the substrate, and then place it in a constant temperature heat treatment at 150 °C to cure into a film to obtain a hole injection layer;

[0139] S10.3. Under the nitrogen environment of normal temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 8 mg / mL on the side of the hole injection layer away from the first electrode, and then place it in a constant temperature heat treatment at 170 °C under a nitrogen atmosphere to cure into a film to obtain a hole transport layer;

[0140] S10.4. Under the nitrogen environment of normal temperature and pressure, spin-coat a quantum dot-n-octane solution with a concentration of 25 mg / mL on the side of the hole transport layer away from the hole injection layer, and then place it in a constant temperature heat treatment at 100 °C under a nitrogen atmosphere to cure into a film, and then perform ultraviolet light irradiation treatment for 10 min (power 500 W) to obtain a light-emitting layer;

[0141] S10.5. Under the nitrogen environment of normal temperature and pressure, spin-coat a ZnO-n-heptane solution with a concentration of 30 mg / mL (ZnO is prepared in Metal Oxide Example 1) on the side of the light-emitting layer away from the hole transport layer, and then place it in a constant temperature heat treatment at 100 °C under a nitrogen atmosphere to cure into a film to obtain an electron functional layer;

[0142] S10.6. Place the stacked structure completed in step S10.5 in an evaporation chamber with a vacuum degree not higher than 3×10 -4 Pa, thermally evaporate Al on the side of the electron functional layer away from the light-emitting layer by using a thermal evaporation process to obtain a second electrode, and then encapsulate it with a non-acidic epoxy resin LOCTITE 3335 to obtain an optoelectronic device.

[0143] Device Embodiment 2

[0144] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the electron functional layer is replaced with "ZnO prepared from Metal Oxide Embodiment 2".

[0145] The method for preparing the optoelectronic device in this embodiment is carried out with reference to Device Embodiment 1.

[0146] Device Embodiment 3

[0147] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the electron functional layer is replaced with "ZnO prepared from Metal Oxide Embodiment 3".

[0148] The method for preparing the optoelectronic device in this embodiment is carried out with reference to Device Embodiment 1.

[0149] Device Embodiment 4

[0150] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the electron functional layer is replaced with "ZnO prepared from Metal Oxide Embodiment 4".

[0151] The method for preparing the optoelectronic device in this embodiment is carried out with reference to Device Embodiment 1.

[0152] Device Embodiment 5

[0153] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the electron functional layer is replaced with "ZnO prepared from Metal Oxide Embodiment 5".

[0154] The method for preparing the optoelectronic device in this embodiment is carried out with reference to Device Embodiment 1.

[0155] Device Embodiment 6

[0156] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the electron functional layer is replaced with "ZnO prepared from Metal Oxide Embodiment 6".

[0157] The method for preparing the optoelectronic device in this embodiment is carried out with reference to Device Embodiment 1.

[0158] Device Embodiment 7

[0159] This embodiment provides an optoelectronic device and a method for manufacturing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment lies in that the material of the electron functional layer is replaced with "ZnO prepared in Metal Oxide Embodiment 7".

[0160] The method for manufacturing the optoelectronic device in this embodiment refers to Device Embodiment 1 for implementation.

[0161] Device Embodiment 8

[0162] This embodiment provides an optoelectronic device and a method for manufacturing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment lies in that the material of the electron functional layer is replaced with "ZnO prepared in Metal Oxide Embodiment 8".

[0163] The method for manufacturing the optoelectronic device in this embodiment refers to Device Embodiment 1 for implementation.

[0164] Device Embodiment 9

[0165] This embodiment provides an optoelectronic device and a method for manufacturing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment lies in that the material of the electron functional layer is replaced with "ZnO prepared in Metal Oxide Embodiment 9".

[0166] The method for manufacturing the optoelectronic device in this embodiment refers to Device Embodiment 1 for implementation.

[0167] Device Embodiment 10

[0168] This embodiment provides an optoelectronic device and a method for manufacturing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment lies in that the material of the electron functional layer is replaced with "ZnO prepared in Metal Oxide Embodiment 10".

[0169] The method for manufacturing the optoelectronic device in this embodiment refers to Device Embodiment 1 for implementation.

[0170] Device Embodiment 11

[0171] This embodiment provides an optoelectronic device and a method for manufacturing the same. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment lies in that the material of the hole transport layer is replaced with "NiO prepared in Metal Oxide Embodiment 11".

[0172] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this example is that: step S10.3 is replaced with "spin-coating a NiO-carbon tetrachloride solution with a concentration of 30 mg / mL (NiO is prepared in Metal Oxide Example 11) on the side of the hole injection layer away from the first electrode under a nitrogen environment at normal temperature and pressure, and then placing it in a constant temperature heat treatment at 170 °C under a nitrogen atmosphere to cure into a film to obtain a hole transport layer".

[0173] Device Example 12

[0174] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference in the optoelectronic device in this example is that: the material of the hole transport layer is replaced with "NiO prepared in Metal Oxide Example 11", and the material of the electron functional layer is replaced with "ZnO prepared in Metal Oxide Comparative Example 1".

[0175] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this example is that: step S10.3 is replaced with "spin-coating a NiO-carbon tetrachloride solution with a concentration of 30 mg / mL (NiO is prepared in Metal Oxide Example 11) on the side of the hole injection layer away from the first electrode under a nitrogen environment at normal temperature and pressure, and then placing it in a constant temperature heat treatment at 170 °C under a nitrogen atmosphere to cure into a film to obtain a hole transport layer", and "30 mg / mL ZnO-n-heptane solution (ZnO is prepared in Metal Oxide Example 1)" in step S10.5 is replaced with "30 mg / mL ZnO-ethanol solution (ZnO is prepared in Metal Oxide Comparative Example 1)".

[0176] Device Comparative Example 1

[0177] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Device Example 1, the difference in the optoelectronic device in this comparative example is that: the material of the electron functional layer is replaced with "ZnO prepared in Metal Oxide Comparative Example 1".

[0178] Compared with the preparation method of the optoelectronic device in Device Example 1, the difference in the preparation method of the optoelectronic device in this comparative example is that: "30 mg / mL ZnO-n-heptane solution (ZnO is prepared in Metal Oxide Example 1)" in step S10.5 is replaced with "30 mg / mL ZnO-ethanol solution (ZnO is prepared in Metal Oxide Comparative Example 1)".

[0179] Device Comparative Example 2

[0180] This embodiment provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this comparative example lies in that the material of the electron functional layer is replaced with "ZnO prepared in Metal Oxide Comparative Example 2".

[0181] Compared with the preparation method of the optoelectronic device in Device Embodiment 1, the difference of the preparation method of the optoelectronic device in this comparative example lies in that "30 mg / mL ZnO-n-heptane solution (ZnO is prepared in Metal Oxide Embodiment 1)" in Step S10.5 is replaced with "30 mg / mL ZnO-n-heptane solution (ZnO is prepared in Metal Oxide Comparative Example 2)".

[0182] Device Comparative Example 3

[0183] This embodiment provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this comparative example lies in that the material of the hole transport layer is replaced with "NiO prepared in Metal Oxide Comparative Example 3", and the material of the electron functional layer is replaced with "ZnO prepared in Metal Oxide Comparative Example 1".

[0184] Compared with the preparation method of the optoelectronic device in Device Embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment lies in that Step S10.3 is replaced with "Under normal temperature and pressure in a nitrogen environment, spin-coat a 30 mg / mL NiO-chlorobenzene solution (NiO is prepared in Metal Oxide Comparative Example 3) on the side of the hole injection layer away from the first electrode, and then place it in a constant temperature heat treatment at 170 °C in a nitrogen atmosphere to cure into a film to obtain the hole transport layer", and "30 mg / mL ZnO-n-heptane solution (ZnO is prepared in Metal Oxide Embodiment 1)" in Step S10.5 is replaced with "30 mg / mL ZnO-ethanol solution (ZnO is prepared in Metal Oxide Comparative Example 1)".

[0185] Experimental Example 1

[0186] Perform ultraviolet-visible absorption spectroscopy analysis on ZnO prepared in Metal Oxide Embodiment 1 to Metal Oxide Embodiment 3 and Metal Oxide Comparative Example 1 to Metal Oxide Comparative Example 2 respectively. Disperse ZnO prepared in Metal Oxide Embodiment 1 to Metal Oxide Embodiment 3 and Metal Oxide Comparative Example 1 to Metal Oxide Comparative Example 2 in n-heptane respectively to obtain a detection sample with a concentration of 1 mg / mL, and judge the relative content of ZnO in the detection sample by the change of the absorption peak intensity. The detection results are as Figure 3 shown.

[0187] From Figure 3It can be seen that, compared with the test samples of ZnO prepared in Comparative Example 1 containing metal oxides and the test samples of ZnO prepared in Comparative Example 2, the absorption intensity of the test samples of ZnO prepared in any one of Metal Oxide Examples 1 to Metal Oxide Examples 3 at a wavelength of 300 nm to 350 nm is significantly increased, indicating that: the ZnO prepared in Metal Oxide Examples 1 to Metal Oxide Examples 3 has a higher purity.

[0188] Experimental Example 2

[0189] The performance of the optoelectronic devices in the state of being encapsulated for 1 h in Device Examples 1 to Device Examples 12 and Device Comparative Examples 1 to Device Comparative Examples 3 was respectively detected. The performance test was carried out in an environment with a temperature of 25 °C and a relative humidity of 45%.

[0190] The detection of optoelectronic performance was carried out using a FushiDa FPD optical property measurement device (including an Ocean Optics USB2000, a LabView-controlled QE-PRO spectrometer, a Keithley 2400, a high-precision digital source meter Keithley 6485, an optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various related connection wires and data cards, an efficiency test dark box, and a data acquisition system, etc., to build an efficiency test system), to obtain parameters such as the turn-on voltage, current, brightness, and emission spectrum of each optoelectronic device, and then calculate key parameters such as the external quantum efficiency and power efficiency.

[0191] Among them, the detection method of current efficiency includes the steps: setting the emission area to 2 mm × 2 mm = 4 mm 2 , under the drive of a constant current (1 mA), intermittently collect the brightness values of the optoelectronic device in the voltage range of 0 V to 8 V. The initial voltage value for collecting brightness is 3 V, and it is collected every 0.2 V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the optoelectronic device under the collection conditions of that time, and obtain the current efficiency (C.E@1000 nit, cd / A) at a brightness of 1000 nit.

[0192] The detection method of device life includes the steps: under the drive of a constant current (2 mA), use a life test device to perform electroluminescence life analysis on each optoelectronic device, and record the time (T95, h) required for each optoelectronic device to decay from the maximum brightness to 95%.

[0193] The detection method of device performance stability includes the steps: perform four consecutive tests using the aforementioned detection method of current efficiency, and record the current density of 40 mA / cm in each test 2The corresponding voltage value is obtained, and the variance σ2 between the four recorded voltage values is calculated. The larger the variance σ2, the higher the performance stability of the optoelectronic device. Conversely, the smaller the variance σ2, the lower the performance stability of the optoelectronic device.

[0194] The performance test results of each optoelectronic device are shown in Table 1 below:

[0195] Table 1

[0196]

[0197] As can be seen from Table 1, compared with the optoelectronic devices in Device Comparative Example 1 and Device Comparative Example 2, the device efficiency, device lifetime, and device stability of the optoelectronic devices in Device Examples 1 to 11 have significant advantages. Taking Device Example 2 and Device Comparative Example 1 as an example, the C.E@1000nit of the optoelectronic device in Device Example 2 is 2.7 times that of the optoelectronic device in Device Comparative Example 1, the T95 of the optoelectronic device in Device Example 2 is 2.5 times that of the optoelectronic device in Device Comparative Example 1, and the σ2 of the optoelectronic device in Device Example 2 is 3.2% of the σ2 of the optoelectronic device in Device Comparative Example 1; compared with the optoelectronic device in Comparative Example 3, the device efficiency, device lifetime, and device stability of the optoelectronic device in Device Example 12 are better.

[0198] This shows that the material of the electron functional layer includes the metal oxide (such as ZnO) prepared by the purification method of the metal oxide provided in the embodiments of the present application, and / or the material of the hole functional layer includes the metal oxide (such as NiO) prepared by the purification method of the metal oxide provided in the embodiments of the present application, which can improve the performance stability of the electron functional layer and / or the hole functional layer, and is beneficial to improving the device efficiency, device lifetime, and device stability of the optoelectronic device.

[0199] In this article, specific examples are used to illustrate the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A method for purifying a metal oxide, characterized in that, It includes the following steps: Providing a dispersion containing a metal oxide, mixing the dispersion with a first amine compound to carry out a first reaction to obtain a first reaction product; Performing a first solid-liquid separation on the first reaction product and collecting the obtained solid; Mixing the collected solid with a second amine compound to carry out a second reaction to obtain a second reaction product, and then performing a second solid-liquid separation on the second reaction product and collecting the solid again to obtain a purified metal oxide; Wherein, the second reaction is carried out at least once, and / or the second solid-liquid separation is carried out at least once.

2. The purification method of the metal oxide according to claim 1, wherein The dispersion medium of the dispersion is a polar organic solvent; and / or The first amine compound and the second amine compound are each independently selected from the compounds represented by the following general formula (Ⅰ): In the general formula (Ⅰ), R1 to R3 are each independently selected from hydrogen, a linear hydrocarbon group having 5 to 20 carbon atoms which is at least substituted by one substituent or unsubstituted, a linear hydrocarbon oxy group having 5 to 20 carbon atoms which is at least substituted by one substituent or unsubstituted, an aliphatic cyclo hydrocarbon group having 3 to 20 ring atoms which is at least substituted by one substituent or unsubstituted, an aliphatic heterocyclic hydrocarbon group having 3 to 20 ring atoms which is at least substituted by one substituent or unsubstituted, or a combination of these groups, and at least one of R1 to R3 is not hydrogen. Among them, the heteroatoms in the aliphatic heterocyclic hydrocarbon group are each independently selected from one or more of N, S, O, P, and Si, and the number of heteroatoms in the aliphatic heterocyclic hydrocarbon group is independently 1 to 20; the substituents are each independently selected from deuterium, amino group, halogen, hydroxyl group, carboxyl group, nitro group, sulfonic acid group, aldehyde group, carbonyl group, mercapto group, or cyano group, or a combination of these groups.

3. The purification method of the metal oxide according to claim 2, wherein At least one of R1 to R3 is selected from a linear hydrocarbon group having 8 to 20 carbon atoms which is substituted or unsubstituted by an amino group, a linear hydrocarbon oxy group having 8 to 20 carbon atoms which is substituted or unsubstituted by an amino group, an aliphatic cyclo hydrocarbon group having 3 to 20 ring atoms which is substituted or unsubstituted by an amino group, an aliphatic heterocyclic hydrocarbon group having 3 to 20 ring atoms which is substituted or unsubstituted by an amino group, or a combination of these groups; and / or The polarity value of the dispersion medium of the dispersion is 4 to 10.

4. The purification method of the metal oxide according to claim 3, characterized in that, The first amine compound and the second amine compound are each independently selected from one or more of dodecylamine, tetradecylamine, hexadecylamine, octadecylamine, oleylamine, and eicosylamine; and / or The dispersion medium of the dispersion is selected from one or more of methanol, ethanol, ethylene glycol, acetonitrile, dimethylformamide, and dimethyl sulfoxide.

5. The purification method of the metal oxide according to claim 1, wherein The second reaction is carried out under the condition of 120°C to 180°C, and / or the time of the second reaction is 1 h to 3 h; and / or In the step of mixing the dispersion with the first amine compound to carry out the first reaction, the molar ratio of the metal oxide in the dispersion to the first amine compound is 1:(10 to 50); and / or The step of mixing the dispersion liquid and the first amine compound for the first reaction includes: providing a first solution containing the first amine compound, wherein the solvent of the first solution is an aliphatic alcohol compound having 1 to 8 carbon atoms, and then mixing the first solution and the dispersion liquid; and / or The molar ratio of the metal oxide to the second amine compound is 1:(15 - 50).

6. The purification method of the metal oxide according to any one of claims 1 to 5, characterized in that, The step of providing the first dispersion liquid containing the metal oxide includes the following steps: providing a second solution containing a metal precursor and a third solution containing a base; and mixing the second solution and the third solution to carry out a third reaction to obtain the first dispersion liquid.

7. The purification method of the metal oxide according to claim 6, characterized in that, The solvents of the second solution and the third solution are independently selected from organic solvents having a polarity value of 4 to 10; optionally, the solvents of the second solution and the third solution are independently selected from one or more of methanol, ethanol, ethylene glycol, acetonitrile, dimethylformamide, and dimethyl sulfoxide; and / or The metal element of the metal precursor is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals, and transition metals; optionally, the metal element of the metal precursor is selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ca, Ga, Li, Y, In, Ni, Mo, W, V, Cr, and Cu; and / or The base includes one or more of an organic base and an inorganic base, wherein the inorganic base is selected from one or more of alkali metal oxides, alkali metal hydroxides, alkali metal bicarbonates, alkali metal carbonates, alkaline earth metal oxides, alkaline earth metal hydroxides, alkaline earth metal bicarbonates, barium hydroxide, and ammonia water; the organic base is selected from one or more of alkanolamine compounds, alkyl ammonium hydroxides, and urea, wherein the alkyl in the alkyl ammonium hydroxide contains 1 to 20 carbon atoms; and / or The molar ratio of the metal precursor to the base is 1:(0.8 - 5); and / or The third reaction is carried out at a temperature of 25°C to 80°C.

8. A metal oxide, characterized in that, The metal oxide is nano-spherical, and the average particle size of the metal oxide is 2 nm to 15 nm.

9. The metal oxide according to claim 8, characterized in that, The metal oxide is doped or undoped; wherein, the undoped metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, NiO, MoO3, WO3, V2O5, Cr2O3, CuO or Cu2O, and / or the doped metal oxide is a host metal oxide doped with a first doping element, the host metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, NiO, MoO3, WO3, V2O5, Cr2O3, CuO or Cu2O, the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, Ni, Mo, V, Cr and Cu, and the molar amount of the first doping element accounts for no more than 50% of the total molar amount of the doped metal oxide.

10. An optoelectronic device, characterized in that, The optoelectronic device includes: A first electrode and a second electrode disposed opposite to each other; and A functional layer disposed between the first electrode and the second electrode; Wherein, the functional layer includes a plurality of stacked functional sub-layers; the material of at least one of the functional sub-layers includes a metal oxide prepared by the purification method of the metal oxide described in any one of claims 1 to 7, or the metal oxide described in claim 8 or 9.

11. The optoelectronic device according to claim 10, characterized in that, The plurality of functional sub-layers include an electron functional layer; the material of the electron functional layer includes a metal oxide prepared by the purification method of the metal oxide described in any one of claims 1 to 7, or the metal oxide described in claim 8 or 9; the metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, magnesium zinc oxide, calcium zinc oxide, zirconium zinc oxide, gallium zinc oxide, aluminum zinc oxide, lithium zinc oxide, titanium zinc oxide, yttrium zinc oxide, indium tin oxide and lithium titanium oxide.

12. The optoelectronic device according to claim 10, wherein, The plurality of functional sub-layers include a hole functional layer; the material of the hole functional layer includes a metal oxide prepared by the purification method of the metal oxide described in any one of claims 1 to 7, or the metal oxide described in claim 8 or 9; the metal oxide is selected from one or more of NiO, MoO3, WO3, V2O5, Cr2O3, CuO and Cu2O.

13. The optoelectronic device according to any one of claims 10 to 12, characterized in that, The multiple functional sub-layers include a light-emitting layer; the material of the light-emitting layer includes an organic light-emitting material or a luminescent quantum dot; the organic light-emitting material is selected from one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III), 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, a polymer containing B-N covalent bonding, a hybrid local charge transfer excited state material, an exciplex luminescent material, polyacetylene and its derivatives, poly(phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or, the luminescent quantum dot is selected from one or more of a single-component quantum dot, a core-shell structure quantum dot, an inorganic perovskite quantum dot, an organic perovskite quantum dot, and an organic-inorganic hybrid perovskite quantum dot, and the core-shell structure quantum dot includes one or more shell layers;The material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots, and the material of the shell of the core-shell structure quantum dots are independently selected from at least one of II-VI group compounds, III-VI group compounds, III-V group compounds, IV-VI group compounds, or I-III-VI group compounds, wherein the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the III-VI group compounds are selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the I-III-VI group compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2; and / or, the structural general formula of the inorganic perovskite quantum dots is AMX3, where A is Cs; + , M is a divalent metal cation, and M is selected from Pb 2 + , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ and Eu 2+ one or more of them, X is a halogen anion; and / or, the structural general formula of the organic perovskite quantum dots is CMX3, C is formamidinium; and / or, the structural general formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, B is an organic amine cation; and / or The materials of the first electrode and the second electrode independently include one or more of a metal, a carbon material and a metal oxide material; wherein, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the metal oxide material is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3.

14. An electronic device, characterized in that, The electronic device includes the optoelectronic device described in any one of claims 10 to 13.

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