A computer-aided method for detecting the photoelectric conversion efficiency of plasma devices

Abstract

The present invention relates to the field of computer-aided design technology, and more particularly to a computer-aided method for detecting the photoelectric conversion efficiency of a plasma device. The method comprises: determining an overall electrical performance value corresponding to each preset film thickness based on the film resistance of the plasma device at each preset film thickness under different preset laser energy densities collected at different preset times; segmenting the reflection spectrum curve corresponding to the plasma device at the preset film thickness and performing linear fitting on the segments; determining a photoelectric conversion stability index corresponding to the preset film thickness; and performing photoelectric conversion efficiency detection on the plasma device at each preset film thickness based on the photoelectric conversion stability index and the IPCE value. The present invention comprehensively considers the photoelectric conversion stability index and the IPCE value when performing photoelectric conversion efficiency detection, thereby improving the accuracy of detecting the photoelectric conversion efficiency of plasma devices at different film thicknesses.

Description

Technical Field

[0001] The present invention relates to the technical field of computer-aided design, and in particular to a computer-aided method for detecting the photoelectric conversion efficiency of a plasma device. Background Art

[0002] CZTSSe, commonly referred to as CZTSSe, is a thin-film solar cell material with a built-in thin film. It can be considered a high-efficiency photovoltaic device powered by plasma technology. It is a copper-zinc-tin-sulfur-selenide compound primarily composed of copper (Cu), zinc (Zn), and tin (Sn), with sulfur (S) and selenium (Se) as doping elements. CZTSSe has attracted widespread attention due to its abundant elemental resources, low cost, and high photoelectric conversion efficiency. Because different film thicknesses often have different effects on photoelectric conversion efficiency, testing the photoelectric conversion efficiency of plasma devices such as CZTSSe is crucial. Currently, the method commonly used to test the photoelectric conversion efficiency of plasma devices is to use the IPCE (monochromatic incident photon-to-electron conversion efficiency) value of the plasma device as the photoelectric conversion efficiency of the plasma device.

[0003] However, when the IPCE values of plasma devices with different film thicknesses are used as the photoelectric conversion efficiency of plasma devices with different film thicknesses, the following technical problems often arise:

[0004] Since different film thicknesses often correspond to different electrical properties, which often affect the stability of the photoelectric conversion process and thus the photoelectric conversion efficiency, when testing the photoelectric conversion efficiency of plasma devices with different film thicknesses, if only the IPCE value is considered, the accuracy of the photoelectric conversion efficiency testing of plasma devices with different film thicknesses may be poor. Summary of the Invention

[0005] In order to solve the technical problem of poor accuracy in detecting the photoelectric conversion efficiency of plasma devices with different film thicknesses, the present invention proposes a computer-aided method for detecting the photoelectric conversion efficiency of plasma devices.

[0006] In a first aspect, the present invention provides a computer-aided method for detecting photoelectric conversion efficiency of a plasma device, the method comprising:

[0007] Determining the overall electrical performance value corresponding to each preset film thickness based on the film resistance of the plasma device under different preset laser energy densities collected at different preset times at each preset film thickness;

[0008] Obtaining a reflection spectrum curve corresponding to the plasma device at each preset film thickness, and segmenting each reflection spectrum curve to obtain a target sub-curve;

[0009] Perform a straight line fitting on each target sub-curve to obtain the fitting error corresponding to each target sub-curve;

[0010] Determine the photoelectric conversion stability index corresponding to each preset film thickness based on the overall electrical performance value corresponding to the plasma device under different preset film thicknesses and the fitting errors corresponding to all corresponding target sub-curves;

[0011] According to the photoelectric conversion stability index corresponding to each preset film thickness and the pre-acquired IPCE value corresponding to the plasma device at each preset film thickness, the photoelectric conversion efficiency of the plasma device at each preset film thickness is tested.

[0012] In conjunction with the first aspect above, in one possible implementation, determining the overall electrical performance value corresponding to each preset film thickness based on the film resistance of the plasma device at each preset film thickness under different preset laser energy densities collected at different preset times includes:

[0013] Determining a local electrical performance value of each preset film thickness at each preset time according to the film resistance of the plasma device at each preset film thickness under different preset laser energy densities collected at each preset time;

[0014] The average of the local performance values of the electrical performance of each preset film thickness at all preset moments is determined as the overall performance value of the electrical performance corresponding to each preset film thickness.

[0015] In conjunction with the first aspect above, in one possible implementation, determining the local electrical performance value of each preset film thickness at each preset moment based on the film resistance of the plasma device at each preset film thickness under different preset laser energy densities collected at each preset moment includes:

[0016] The average value of all preset laser energy densities is determined as the overall laser energy density;

[0017] Determine the average value of the sheet resistance of the plasma device at each preset film thickness under all preset laser energy densities collected at each preset time as the overall sheet resistance of each preset film thickness at each preset time;

[0018] The local performance value of the electrical performance of each preset film thickness at each preset moment is determined according to the overall laser energy density and the overall film resistance of each preset film thickness at each preset moment.

[0019] In combination with the first aspect above, in one possible implementation, determining the local electrical performance value of each preset film thickness at each preset moment based on the overall laser energy density and the overall film resistance of each preset film thickness at each preset moment includes:

[0020] The ratio of the overall film resistance of each preset film thickness at each preset moment to the overall laser energy density is normalized to obtain a local electrical performance value of each preset film thickness at each preset moment.

[0021] In conjunction with the first aspect above, in one possible implementation, determining the photoelectric conversion stability index corresponding to each preset film thickness based on the overall electrical performance value corresponding to the plasma device at different preset film thicknesses and the fitting errors corresponding to all corresponding target sub-curves includes:

[0022] Determine the target characteristic value of each preset film thickness under each corresponding target sub-curve according to the overall electrical performance value corresponding to the plasma device under each preset film thickness and the fitting error corresponding to each corresponding target sub-curve;

[0023] The photoelectric conversion stability index corresponding to each preset film thickness is determined according to the difference between the target characteristic values of each preset film thickness and other preset film thicknesses under the corresponding target sub-curves of the same order.

[0024] In conjunction with the first aspect above, in one possible implementation, the photoelectric conversion efficiency test of the plasma device at each preset film thickness is performed based on the photoelectric conversion stability index corresponding to each preset film thickness and the pre-acquired IPCE value corresponding to the plasma device at each preset film thickness, including:

[0025] Normalizing the product of the photoelectric conversion stability index corresponding to each preset film thickness and the IPCE value corresponding to the plasma device thereunder to obtain the target photoelectric conversion efficiency corresponding to each preset film thickness;

[0026] According to the target photoelectric conversion efficiency corresponding to each preset film thickness, the photoelectric conversion efficiency of the plasma device under each preset film thickness is tested.

[0027] In combination with the first aspect above, in one possible implementation, the photoelectric conversion efficiency test of the plasma device at each preset film thickness according to the target photoelectric conversion efficiency corresponding to each preset film thickness includes:

[0028] If the target photoelectric conversion efficiency corresponding to the preset film thickness is greater than the preset efficiency threshold, it is determined that the photoelectric conversion efficiency of the plasma device under the preset film thickness is qualified;

[0029] If the target photoelectric conversion efficiency corresponding to the preset film thickness is less than or equal to the preset efficiency threshold, it is determined that the photoelectric conversion efficiency of the plasma device at the preset film thickness is unqualified.

[0030] In combination with the first aspect above, in a possible implementation, the method further includes:

[0031] Obtaining data values of the plasma device at each preset film thickness and each preset output performance parameter;

[0032] Determine the variance of the data values of the plasma device under each preset film thickness under all preset output performance parameters as a target variance corresponding to each preset film thickness;

[0033] Screening candidate film thicknesses from all preset film thicknesses according to target variances corresponding to different preset film thicknesses;

[0034] Determine the average of the data values of the plasma device under each candidate film thickness under all preset output performance parameters as the target average value corresponding to each candidate film thickness;

[0035] According to the target mean values and photoelectric conversion stability indicators corresponding to different candidate film thicknesses, a reference film thickness is selected from all candidate film thicknesses;

[0036] A reference film thickness with the maximum target photoelectric conversion efficiency is selected from all reference film thicknesses as the target film thickness.

[0037] In combination with the first aspect above, in a possible implementation, screening candidate film thicknesses from all preset film thicknesses according to target variances corresponding to different preset film thicknesses includes:

[0038] Determine any preset film thickness as a marked film thickness, and determine the difference between the target variance corresponding to the marked film thickness and the target variance corresponding to the previous preset film thickness as the variance difference corresponding to the marked film thickness;

[0039] If the variance difference corresponding to the marked film thickness is less than or equal to a constant of 0, the marked film thickness is determined as a candidate film thickness.

[0040] In combination with the first aspect above, in one possible implementation, selecting a reference film thickness from all candidate film thicknesses based on target mean values and photoelectric conversion stability indicators corresponding to different candidate film thicknesses includes:

[0041] Determine the relevant variation index corresponding to each candidate film thickness according to the target mean value and the photoelectric conversion stability index corresponding to each candidate film thickness;

[0042] If the relevant variation index corresponding to the candidate film thickness is less than or equal to a constant 1, the candidate film thickness is determined as the reference film thickness.

[0043] In a second aspect, the present invention provides a computer-aided plasma device photoelectric conversion efficiency detection system, the system comprising:

[0044] an electrical performance overall performance value determination module, configured to determine the electrical performance overall performance value corresponding to each preset film thickness based on the film resistance of the plasma device under different preset laser energy densities collected at different preset times at each preset film thickness;

[0045] A curve acquisition and segmentation module is used to acquire the reflection spectrum curve corresponding to the plasma device under each preset film thickness, and segment each reflection spectrum curve to obtain a target sub-curve;

[0046] A straight line fitting module is used to perform straight line fitting on each target sub-curve to obtain the fitting error corresponding to each target sub-curve;

[0047] A photoelectric conversion stability index determination module is used to determine the photoelectric conversion stability index corresponding to each preset film thickness based on the overall electrical performance value corresponding to the plasma device under different preset film thicknesses and the fitting errors corresponding to all corresponding target sub-curves;

[0048] The photoelectric conversion efficiency detection module is used to detect the photoelectric conversion efficiency of the plasma device at each preset film thickness based on the photoelectric conversion stability index corresponding to each preset film thickness and the IPCE value corresponding to the plasma device at each preset film thickness obtained in advance.

[0049] In a third aspect, a server is provided, comprising a memory and a processor. The memory is configured to store executable program code, and the processor is configured to call and execute the executable program code from the memory, so that the device executes the method of the first aspect or any possible implementation of the first aspect.

[0050] In a fourth aspect, a computer program product is provided, comprising: a computer program code, which, when executed on a computer, enables the computer to execute the method in the first aspect or any possible implementation of the first aspect.

[0051] In a fifth aspect, a computer-readable storage medium is provided, which stores a computer program code. When the computer program code runs on a computer, the computer executes the method in the above-mentioned first aspect or any possible implementation of the first aspect.

[0052] The present invention has the following beneficial effects:

[0053] The present invention provides a computer-aided method for detecting the photoelectric conversion efficiency of a plasma device. This method comprehensively considers the photoelectric conversion stability index and the IPCE value when performing photoelectric conversion efficiency detection, thereby resolving the technical problem of poor accuracy in detecting the photoelectric conversion efficiency of plasma devices at different film thicknesses, thereby improving the accuracy of detecting the photoelectric conversion efficiency of plasma devices at different film thicknesses. Specifically, based on the sheet resistance of the plasma device at each preset film thickness under different preset laser energy densities, collected at different preset times, the present invention quantifies the overall electrical performance value corresponding to each preset film thickness, thereby quantifying the photoelectric conversion stability index corresponding to each preset film thickness. Furthermore, based on the photoelectric conversion stability index corresponding to each preset film thickness and the IPCE value of the plasma device corresponding to that thickness, the present invention achieves precise detection of the photoelectric conversion efficiency of plasma devices at different preset film thicknesses, thereby improving the accuracy of detecting the photoelectric conversion efficiency of plasma devices at different film thicknesses. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] In order to more clearly illustrate the technical solutions and advantages of the embodiments of the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the prior art descriptions. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0055] Figure 1 This is a flow chart of a computer-aided method for detecting photoelectric conversion efficiency of a plasma device according to the present invention;

[0056] Figure 2 A schematic diagram of the structure of a computer-aided plasma device photoelectric conversion efficiency detection system according to the present invention;

[0057] Figure 3 The figure is a structural diagram of a computer device of the present invention. DETAILED DESCRIPTION

[0058] To further illustrate the technical means and effects employed by the present invention to achieve its intended objectives, the following, in conjunction with the accompanying drawings and preferred embodiments, describes in detail the specific implementations, structures, features, and effects of the technical solutions proposed by the present invention. In the following description, references to "one embodiment" or "another embodiment" do not necessarily refer to the same embodiment. Furthermore, specific features, structures, or characteristics of one or more embodiments may be combined in any suitable manner.

[0059] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0060] CZTSSe, commonly referred to as CZTSSe, is a new photovoltaic material and an important material for solving energy problems. It is a copper-zinc-tin-sulfur-selenide compound composed primarily of copper (Cu), zinc (Zn), and tin (Sn), with sulfur (S) and selenium (Se) as dopants. CZTSSe has attracted widespread attention due to its abundant elemental resources, low cost, and high photoelectric conversion efficiency.

[0061] CZTSSe solar cells are essentially thin-film photovoltaic devices, but their fabrication process extensively utilizes plasma technology for material synthesis, defect control, and interface optimization. These techniques significantly enhance cell performance through precise element doping, defect passivation, and local electric field control. Therefore, CZTSSe cells should be considered high-efficiency photovoltaic devices enabled by plasma technology.

[0062] As a potential ideal photovoltaic absorber material, Cu22nSn(S,Se)4 (CZTSSe) holds great research potential in thin-film solar cells due to its stable structure and low cost. However, significant open-circuit voltage loss in devices has limited its development, with heterojunction interface mismatch being a key factor. Therefore, under experimental conditions, a novel approach can be explored by focusing on the p-type absorber and n-type buffer layers that form the CZTSSe cell heterojunction. By manipulating the element distribution and physical properties of the inversion layer (n-type, (Cu,Ag)2ZnSn(S,Se)4) on the absorber surface, while simultaneously employing Ag2ZnSn(S,e)4 of the same structure as a buffer layer, a homogeneous pn junction can be constructed, reducing open-circuit voltage loss and improving photoelectric conversion efficiency.

[0063] Whether the cause of open-circuit voltage loss is heterojunction interface mismatch, defects and impurities, bandgap mismatch, or the impact of interfacial charge accumulation on carrier separation efficiency, computer-assisted simulation and data-driven methods are required to accurately predict interface characteristics, defect formation, and carrier transport behavior, guiding experimental design and efficiency improvement. This allows for in-depth research on homogeneous pn junction interface performance, achieving optoelectronic performance matching at the interface, clarifying the carrier transport mechanism, and obtaining high-efficiency CZTSSe solar cells. Using computer-aided interpolation of results, we analyze the carrier variations caused by specific cell structural changes from multiple perspectives, ultimately achieving accurate photoelectric conversion efficiency testing.

[0064] The carrier transport condition sensing process of CZTSSe solar cells is as follows:

[0065] In CZTSSe solar cells, the main causes of open-circuit voltage loss include: heterojunction interface mismatch, defects and impurities, bandgap mismatch, and interface charge accumulation. Specifically, differences in lattice constants and thermal expansion coefficients at the heterojunction interface can lead to interface mismatch, reducing carrier transport efficiency and triggering carrier recombination caused by interface defects, reducing the number of collectible photogenerated carriers. Crystal defects, impurities, and non-radiative recombination centers in CZTSSe films can further reduce the open-circuit voltage. In particular, excess or deficiency of copper can affect electrical performance. Bandgap mismatch between different materials in the heterojunction can lead to energy band bending and improper energy level arrangement, affecting the separation and collection efficiency of photogenerated carriers and further reducing Voc. Accumulation of interface charge can form an internal electric field, further hindering the effective separation and collection of carriers, resulting in a drop in open-circuit voltage.

[0066] Since the experimental conditions are based on the p-type absorption layer and n-type buffer layer that constitute the CZTSSe battery heterojunction, a homogeneous pn junction is constructed by controlling the element distribution and the physical properties of the inversion layer n--(Cu,Ag)2ZnSn(S,Se)4 on the surface of the absorption layer, and using Ag2ZnSn(S,e)4 with the same structure as the buffer layer. Therefore, it is necessary to use the difference of computer results to analyze the carrier change status caused by the specific battery structure changes from multiple types of factors, so as to ultimately achieve accurate photoelectric conversion efficiency detection.

[0067] The impact of calculating multiple types of data is as follows:

[0068] Since computer-aided analysis is more useful in data analysis, especially in the experimental process of preparing films of different thicknesses, the photoelectric conversion efficiency can be extracted based on the transmittance data of films of different thicknesses.

[0069] The process of preparing thin films of different thicknesses using plasma technology can include the following steps:

[0070] The first step is to prepare the PECVD equipment, including the reaction chamber, gas flow control system, vacuum system, and plasma generator. Next, a suitable substrate material (such as glass or silicon wafer) is selected and cleaned to remove surface contaminants, followed by drying with nitrogen or air.

[0071] In the second step, the appropriate precursor gas (such as silane or nitrogen) is selected based on the target film material, and the gas flow rate is adjusted to ensure a smooth chemical reaction. During the deposition process, the reaction chamber is evacuated and the gas is excited to form a plasma using an RF or microwave source. The deposition time is adjusted to control the film thickness. For example, 10 minutes can produce a 100 nm film, while 30 minutes can produce a 300 nm film. After deposition, the plasma source is turned off and the reaction chamber is cooled.

[0072] The third step is to remove the deposited film substrate. Optional post-processing steps include heat treatment in a specific atmosphere to promote film crystallization, or surface etching and cleaning.

[0073] In the fourth step, the deposited thin films are tested for optical and electrical properties to evaluate their quality.

[0074] refer to Figure 1 , shows the process of some embodiments of a computer-aided method for detecting photoelectric conversion efficiency of a plasma device according to the present invention. The computer-aided method for detecting photoelectric conversion efficiency of a plasma device comprises the following steps:

[0075] Step S1 , determining an overall electrical performance value corresponding to each preset film thickness according to the film resistance of the plasma device under different preset laser energy densities collected at different preset moments at each preset film thickness.

[0076] The preset film thickness may be a preset film thickness in a plasma device used for photoelectric conversion efficiency testing. The preset time may be a preset time for collecting film resistance. The plasma device in the embodiment of the present invention may be CZTSSe. The preset laser energy density may be a preset laser energy density used for thin film performance testing.

[0077] It should be noted that nanosecond pulse laser irradiation with different laser energy densities can cause different melting conditions for mixed films of different thicknesses, leading to differences in the films' electrical properties. In practice, plasma devices with different preset film thicknesses can be irradiated with the same nanosecond pulse laser energy density within the same time period. The sheet resistance of the plasma devices with different preset film thicknesses can then be measured at equal intervals within that time period. The moment of each sheet resistance measurement is the preset moment.

[0078] As an example, this step may include the following steps:

[0079] The first step is to determine the local electrical performance value of each preset film thickness at each preset time based on the film resistance of the plasma device at each preset film thickness under different preset laser energy densities collected at each preset time, which may include the following sub-steps:

[0080] In the first sub-step, the average value of all preset laser energy densities is determined as the overall laser energy density.

[0081] In the second sub-step, the average value of the sheet resistance of the plasma device at each preset film thickness under all preset laser energy densities collected at each preset moment is determined as the overall sheet resistance of each preset film thickness at each preset moment.

[0082] The third sub-step is to determine the local electrical performance value of each preset film thickness at each preset moment according to the overall laser energy density and the overall film resistance of each preset film thickness at each preset moment.

[0083] For example, the ratio of the overall film resistance of each preset film thickness at each preset moment to the overall laser energy density may be normalized to obtain the local electrical performance value of each preset film thickness at each preset moment.

[0084] For example, the formula for determining the local electrical performance value of a preset film thickness at a preset time may be:

[0085] ;

[0086] in, It is i A preset film thickness is j The local performance value of electrical performance at a preset moment. i It is the serial number of the preset film thickness. j It is the serial number of the preset time. is the normalization function. It is i A preset film thickness is j The overall film resistance at a preset moment; that is, i The plasma device with a preset film thickness is j The average value of the thin film resistance under all preset laser energy densities collected at a preset moment. C is the overall laser energy density, which is the average of all preset laser energy densities.

[0087] In the second step, the average of the local performance values of the electrical performance of each preset film thickness at all preset moments is determined as the overall performance value of the electrical performance corresponding to each preset film thickness.

[0088] For example, the formula for determining the overall electrical performance value corresponding to the preset film thickness can be:

[0089] ;

[0090] in, It is i The overall performance value of electrical performance corresponding to a preset film thickness. i It is the serial number of the preset film thickness. n is the number of preset moments. j It is the serial number of the preset time. It is i A preset film thickness is j The local performance value of electrical performance at a preset moment.

[0091] It should be noted that Can characterize the i The electrical performance of the carrier transport of the hybrid thin film circuit with a preset film thickness is shown in Figure 2. The larger the value, the better the electrical performance of the hybrid thin film circuit with a preset film thickness. i The greater the preset film thickness, the more obvious the difference in electrical properties on the mixed film.

[0092] Step S2: obtaining a reflection spectrum curve corresponding to the plasma device at each preset film thickness, and segmenting each reflection spectrum curve to obtain a target sub-curve.

[0093] It's important to note that for the carrier transport process in CZTSSe thin films, and for all other carrier transport processes involving electron movement during the monitoring period, there are multiple transport stage fluctuations at all locations. This means that the probability of hole formation increases, and the corresponding carrier transport condition becomes more pronounced. Reflectance spectra can be obtained for thin-film cells of varying thicknesses at wavelengths λ between 200 and 2500 nm, yielding their respective reflectance spectral curves. Greater transport stage fluctuations indicate inadequate performance parameters for the hybrid film at the given thickness. A more stable reflectance spectral curve indicates better electrical performance at that thickness.

[0094] As an example, this step may include the following steps:

[0095] The first step is to obtain a reflectivity spectrum diagram of the plasma device at each preset film thickness at a light wavelength of λ = 200–2500 nm as a reflection spectrum curve corresponding to the plasma device at each preset film thickness.

[0096] In the second step, each reflectance spectrum curve is segmented to obtain the target sub-curve.

[0097] For example, the reflectance spectrum curve can be segmented using the extreme value data point on the reflectance spectrum curve as a segmentation point, and the segmented segments are recorded as target sub-curves. The extreme value data point can be a data point on the reflectance spectrum curve that has an extreme value.

[0098] Step S3: performing straight line fitting on each target sub-curve to obtain the fitting error corresponding to each target sub-curve.

[0099] The fitting error is a method for measuring the fitting data, also known as the degree of fit or goodness of fit. In the embodiment of the present invention, the fitting error is used to measure the difference between the target sub-curve and its fitting straight line.

[0100] As an example, a linear fit can be performed on each target sub-curve using the least squares method to obtain a fitting straight line corresponding to each target sub-curve. The absolute value of the difference between the value on each target sub-curve and its corresponding value on the fitting straight line is determined as the reference difference, and the mean of all reference differences corresponding to each target sub-curve is determined as the fitting error corresponding to each target sub-curve.

[0101] Step S4 , determining a photoelectric conversion stability index corresponding to each preset film thickness according to the overall electrical performance values corresponding to the plasma device under different preset film thicknesses and the fitting errors corresponding to all corresponding target sub-curves.

[0102] As an example, this step may include the following steps:

[0103] In the first step, the target characteristic value of each preset film thickness under each corresponding target sub-curve is determined according to the overall electrical performance value corresponding to the plasma device under each preset film thickness and the fitting error corresponding to each corresponding target sub-curve.

[0104] For example, the formula for determining the target characteristic value of the preset film thickness under its corresponding target sub-curve may be:

[0105] ;

[0106] in, It is i The preset film thickness corresponds to the a The target eigenvalue under the target sub-curve. i It is the serial number of the preset film thickness. a It is the serial number of the target sub-curve corresponding to the plasma device under the same preset film thickness. It is i The plasma device with a preset film thickness corresponds to the a The fitting error corresponding to each target sub-curve. It is i The overall performance value of electrical performance corresponding to a preset film thickness. It is a pre-set factor greater than 0, mainly used to prevent the denominator from being 0, such as, It can be 0.001.

[0107] In the second step, the photoelectric conversion stability index corresponding to each preset film thickness is determined according to the difference between the target characteristic values of each preset film thickness and other preset film thicknesses under the corresponding target sub-curves of the same order.

[0108] It should be noted that in the embodiment of the present invention, target sub-curves of the same order corresponding to different preset film thicknesses match each other. If the number of target sub-curves corresponding to different preset film thicknesses is the same, the target sub-curves corresponding to the different preset film thicknesses correspond one to one, and the order of the target sub-curves is the order of their on the reflectance spectrum curve. If the number of target sub-curves corresponding to different preset film thicknesses is different, the target sub-curves corresponding to the different preset film thicknesses can be matched using the DTW (Dynamic Time Warping, similarity matching) algorithm, and the target sub-curves corresponding to the different preset film thicknesses that match each other are recorded as target sub-curves of the same order.

[0109] For example, the formula for determining the photoelectric conversion stability index corresponding to the preset film thickness may be:

[0110] ;

[0111] in, It is i The photoelectric conversion stability index corresponding to a preset film thickness. i and b It is the serial number of different preset film thicknesses. M is the number of different preset film thicknesses. is the normalization function. N It is the number of target sub-curves corresponding to the plasma device under the same preset film thickness. a It is the serial number of the target sub-curve corresponding to the plasma device under the same preset film thickness. It is the absolute value function. It is i The preset film thickness corresponds to the a The target eigenvalue under the target sub-curve. It is b The preset film thickness corresponds to thea The target eigenvalue under the target sub-curve.

[0112] It should be noted that Can characterize the i The overall performance of the carrier transport condition of the mixed film with a preset film thickness. The larger the value, the fewer carrier holes there are and the more stable the photoelectric conversion process.

[0113] Step S5 , performing a photoelectric conversion efficiency test on the plasma device at each preset film thickness according to the photoelectric conversion stability index corresponding to each preset film thickness and the pre-acquired IPCE value corresponding to the plasma device at each preset film thickness.

[0114] As an example, this step may include the following steps:

[0115] The first step is to obtain the IPCE value corresponding to the plasma device under the preset film thickness. The corresponding formula can be:

[0116] ;

[0117] in, It is i The IPCE value corresponding to the plasma device under a preset film thickness. i It is the serial number of the preset film thickness. The incident monochromatic light is i The optical power density on the plasmonic device at a preset film thickness. It is i The current density of the plasma device at a preset film thickness. It is i The voltage of the plasma device at a preset film thickness. It is i The FF value corresponding to a plasma device at a preset film thickness. FF, also known as fill factor, is a key parameter for measuring solar cell performance. FF refers to the ratio of the plasma device's maximum output power (Pmax) to the product of its open-circuit voltage (Voc) and short-circuit current (Isc), typically expressed multiplied by 100%. FF reflects the degree of matching between the solar cell's current and voltage. A higher FF value indicates better matching of current and voltage during the plasma device's photoelectric conversion process, minimizing energy losses and, consequently, improving the overall performance of the plasma device.

[0118] In the second step, the product of the photoelectric conversion stability index corresponding to each preset film thickness and the IPCE value corresponding to the plasma device thereunder is normalized to obtain the target photoelectric conversion efficiency corresponding to each preset film thickness.

[0119] For example, the formula for determining the target photoelectric conversion efficiency corresponding to the preset film thickness may be:

[0120] ;

[0121] in, It is i The target photoelectric conversion efficiency corresponding to a preset film thickness. i It is the serial number of the preset film thickness. It is i The photoelectric conversion stability index corresponding to a preset film thickness. It is i The IPCE value corresponding to the plasma device under a preset film thickness.

[0122] The third step, based on the target photoelectric conversion efficiency corresponding to each preset film thickness, is to test the photoelectric conversion efficiency of the plasma device at each preset film thickness, which may include the following sub-steps:

[0123] In the first sub-step, if the target photoelectric conversion efficiency corresponding to the preset film thickness is greater than a preset efficiency threshold, it is determined that the photoelectric conversion efficiency of the plasma device at the preset film thickness is qualified.

[0124] The preset efficiency threshold may be a pre-set threshold, which may be 0.6.

[0125] In the second sub-step, if the target photoelectric conversion efficiency corresponding to the preset film thickness is less than or equal to a preset efficiency threshold, it is determined that the photoelectric conversion efficiency of the plasma device at the preset film thickness is unqualified.

[0126] Optionally, based on the carrier transport performance obtained on the hierarchical carrier transport, an optimization analysis of the actual photoelectric conversion efficiency is achieved. In order to obtain the optimization analysis of the actual photoelectric conversion efficiency, it is necessary to obtain the output performance parameters of the battery's JV characteristic data, including: short-circuit current (ISC), conversion efficiency (η), external quantum efficiency (EQE) and other specific performance parameters, analyze the parameter change restrictions such as film thickness, and achieve the optimization process of the photoelectric conversion efficiency IPCE. This optimization process is an adjustment for the loss of multiple types of data in the open-circuit voltage process during the actual photoelectric conversion process, that is, the optimized photoelectric efficiency that can be measured is a reliable and accurate photoelectric conversion efficiency of the plasma device. Specifically, the optimization process may include the following steps:

[0127] The first step is to obtain data values of the plasma device under each preset film thickness under each preset output performance parameter.

[0128] The preset output performance parameter may be a pre-set output performance parameter, and the data value under the preset output performance parameter may be a preset output performance parameter value.

[0129] It should be noted that the current density-voltage (JV) curves of the plasma device at the preset film thickness were obtained using a Vision VS-6825A-GX solar simulator equipped with a 1000-W xenon lamp in a standard The JV characteristic data of the solar cell is collected and its output performance parameters can be calculated. Output performance parameters may include but are not limited to: short-circuit current (ISC), open-circuit voltage (VOC), fill factor (FF), conversion efficiency (η), maximum power (Pmax), maximum power point current (Imax), maximum power point voltage (Vmax), series resistance (Rseries), and shunt resistance (Rsh).

[0130] Plasma enhanced chemical vapor deposition (PECVD) technology can be used to control the RF power (50-100W) and Mixed gas ratio to prepare high crystallinity films.

[0131] A Bentham PVE300-IVT210-GX quantum efficiency meter was used to obtain external quantum efficiency (EQE) curves for solar cells with wavelengths ranging from 300 to 1800 nm. EQE is the ratio of the number of electrons delivered to the external circuit for each photon incident on the device, and can be directly determined using a quantum efficiency meter. In an ideal cell, each photon typically generates an electron-hole pair. Consequently, these charge carriers travel to the depletion region, where they are separated and collected.

[0132] The photoelectric conversion efficiency (η) of a plasma device can be referred to the basic formula: η=(Pout) / Pin‌, where Pin represents the light power density received per unit area; Pout represents the output electrical power.

[0133] The output power of a plasma device is often affected by the three factors: fill factor (FF) × open circuit voltage (Voc) × short circuit current density (Jsc).

[0134] For example, in an embodiment of the present invention, there may be three preset output performance parameters, which may be a short-circuit current (ISC) parameter, a conversion efficiency (η) parameter, and an external quantum efficiency (EQE) parameter, respectively. The data values under these three preset output performance parameters may be short-circuit current (ISC), conversion efficiency (η), and external quantum efficiency (EQE), respectively.

[0135] In the second step, the variance of the data values of the plasma device under each preset film thickness under all preset output performance parameters is determined as the target variance corresponding to each preset film thickness.

[0136] The third step, based on the target variances corresponding to different preset film thicknesses, screening candidate film thicknesses from all preset film thicknesses may include the following sub-steps:

[0137] In the first sub-step, any preset film thickness is determined as the marked film thickness, and the difference between the target variance corresponding to the marked film thickness and the target variance corresponding to the previous preset film thickness is determined as the variance difference corresponding to the marked film thickness.

[0138] It should be noted that the preset film thicknesses are arranged in ascending order. The previous preset film thickness of the marking film thickness may be a preset film thickness smaller than the marking film thickness.

[0139] In the second sub-step, if the variance difference corresponding to the marked film thickness is less than or equal to a constant of 0, the marked film thickness is determined as a candidate film thickness.

[0140] It should be noted that the variance difference corresponding to the marked film thickness indicates the change in the limiting parameter value when the thickness changes. Since the optimization process is to maximize the photoelectric efficiency, the change in the limiting parameter value often cannot be increased.

[0141] In the fourth step, the average of the data values of the plasma device under each candidate film thickness under all preset output performance parameters is determined as the target average value corresponding to each candidate film thickness.

[0142] The fifth step is to select a reference film thickness from all candidate film thicknesses based on the target mean values and photoelectric conversion stability indicators corresponding to different candidate film thicknesses, which may include the following sub-steps:

[0143] In the first sub-step, a relevant variation index corresponding to each candidate film thickness is determined based on a target mean value and a photoelectric conversion stability index corresponding to each candidate film thickness.

[0144] For example, the formula for determining the relevant variation index corresponding to the candidate film thickness can be: ;

[0145] in, It is k The relevant variation index corresponding to the thickness of each candidate film. k is the sequence number of the candidate film thickness. It is k The target mean value corresponding to the candidate film thickness; that is, kThe average of the data values of the plasma device under all preset output performance parameters at the candidate film thickness. It is k The photoelectric conversion stability index corresponding to the thickness of the candidate film. It is a pre-set factor greater than 0, mainly used to prevent the denominator from being 0, such as, It can be 0.0001.

[0146] It should be noted that Refers to the k The correlation between the carrier transport performance of the film with each candidate film thickness and the average level of the change in the limiting parameter value is shown. The closer the value is to 1, the more stable the carrier transport performance is, the more reliable the change in the film limiting parameter at this thickness is, and the more accurate the corresponding photoelectric efficiency test result is.

[0147] In the second sub-step, if the relevant variation index corresponding to the candidate film thickness is less than or equal to a constant 1, the candidate film thickness is determined as the reference film thickness.

[0148] In the sixth step, a reference film thickness with the maximum target photoelectric conversion efficiency is selected from all reference film thicknesses as the target film thickness.

[0149] It should be noted that the target film thickness is often the preset film thickness for the highest photoelectric conversion efficiency. The correlation between the carrier transport performance of the hybrid film at the preset film thickness and the thickness variation is used as a constraint to maximize the target photoelectric conversion efficiency. In other words, the more stable the carrier transport performance and the highest possible photoelectric conversion efficiency (IPCE), the more likely the preset film thickness is to be the optimal film thickness.

[0150] In this way, the optimization process of photoelectric conversion efficiency is realized, and the optimal film thickness, doping concentration and other parameters of the solar thin-film cell corresponding to the maximum target photoelectric conversion efficiency are obtained. The parameters of multiple groups of samples are obtained under the same experimental conditions, and the optimization process of multiple groups of parameters is realized by the particle swarm optimization algorithm. The photoelectric conversion efficiency corresponding to the final parameters is used as the final accurate photoelectric conversion efficiency result, realizing computer-assisted photoelectric conversion efficiency detection of plasma devices.

[0151] refer to Figure 2 Based on the same inventive concept as the above-mentioned method embodiment, the present invention provides a computer-aided plasma device photoelectric conversion efficiency detection system, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the computer program is executed by the processor, the steps of a computer-aided plasma device photoelectric conversion efficiency detection method may specifically include:

[0152] The electrical performance overall performance value determination module 201 is used to determine the electrical performance overall performance value corresponding to each preset film thickness based on the film resistance of the plasma device under different preset laser energy densities collected at different preset times at each preset film thickness;

[0153] The curve acquisition and segmentation module 202 is used to acquire the reflection spectrum curve corresponding to the plasma device at each preset film thickness, and segment each reflection spectrum curve to obtain a target sub-curve;

[0154] A straight line fitting module 203 is used to perform straight line fitting on each target sub-curve to obtain a fitting error corresponding to each target sub-curve;

[0155] The photoelectric conversion stability index determination module 204 is configured to determine the photoelectric conversion stability index corresponding to each preset film thickness based on the overall electrical performance values corresponding to the plasma device at different preset film thicknesses and the fitting errors corresponding to all corresponding target sub-curves;

[0156] The photoelectric conversion efficiency detection module 205 is used to detect the photoelectric conversion efficiency of the plasma device at each preset film thickness based on the photoelectric conversion stability index corresponding to each preset film thickness and the pre-acquired IPCE value corresponding to the plasma device at each preset film thickness.

[0157] Figure 3 FIG. 1 is a schematic diagram of the structure of a computer device provided by an embodiment of the present invention. For example, Figure 3 As shown, the computer device 300 includes: a memory 301, a processor 302, and a computer program 303 stored in the memory 301 and running on the processor 302, wherein when the processor 302 executes the computer program 303, the computer device can execute any one of the computer-assisted plasma device photoelectric conversion efficiency detection methods introduced above.

[0158] Based on the same inventive concept as the above-described method embodiments, the present invention provides a server comprising a memory and a processor. The memory is configured to store executable program code, and the processor is configured to retrieve and execute the executable program code from the memory, thereby enabling the server to perform any of the above-described computer-assisted methods for detecting photoelectric conversion efficiency of a plasma device.

[0159] Based on the same inventive concept as the above-mentioned method embodiment, the present invention provides a computer program product, which includes: computer program code, which, when executed on a computer, enables the computer to execute any one of the above-mentioned computer-assisted methods for detecting photoelectric conversion efficiency of a plasma device.

[0160] Based on the same inventive concept as the above-mentioned method embodiment, the present invention provides a computer-readable storage medium, which stores computer program code. When the computer program code is run on a computer, the computer executes any one of the above-mentioned computer-assisted plasma device photoelectric conversion efficiency detection methods.

[0161] In summary, the present invention quantifies the overall electrical performance value corresponding to each preset film thickness based on the film resistance under different preset laser energy densities collected at different preset times of the plasma device under each preset film thickness, thereby quantifying the photoelectric conversion stability index corresponding to each preset film thickness, and based on the photoelectric conversion stability index corresponding to each preset film thickness and the IPCE value of the plasma device under it, accurate detection of the photoelectric conversion efficiency of the plasma device under different preset film thicknesses is achieved, thereby improving the accuracy of the detection of the photoelectric conversion efficiency of the plasma device under different film thicknesses.

[0162] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention, and should all be included in the scope of protection of the present invention.

Claims

1. A computer-aided method for detecting the photoelectric conversion efficiency of a plasma device, characterized in that: The following steps are involved: Determining the overall electrical performance value corresponding to each preset film thickness based on the film resistance of the plasma device under different preset laser energy densities collected at different preset times at each preset film thickness; Obtaining a reflection spectrum curve corresponding to the plasma device at each preset film thickness, and segmenting each reflection spectrum curve to obtain a target sub-curve; Perform a straight line fitting on each target sub-curve to obtain the fitting error corresponding to each target sub-curve; Determine the photoelectric conversion stability index corresponding to each preset film thickness based on the overall electrical performance value corresponding to the plasma device under different preset film thicknesses and the fitting errors corresponding to all corresponding target sub-curves; According to the photoelectric conversion stability index corresponding to each preset film thickness and the pre-acquired IPCE value corresponding to the plasma device at each preset film thickness, the photoelectric conversion efficiency of the plasma device at each preset film thickness is tested.

2. The computer-aided method for detecting the photoelectric conversion efficiency of a plasma device according to claim 1, wherein: The determining of the overall electrical performance value corresponding to each preset film thickness according to the film resistance of the plasma device under different preset laser energy densities collected at different preset times at each preset film thickness includes: Determining a local electrical performance value of each preset film thickness at each preset time according to the film resistance of the plasma device at each preset film thickness under different preset laser energy densities collected at each preset time; The average of the local performance values of the electrical performance of each preset film thickness at all preset moments is determined as the overall performance value of the electrical performance corresponding to each preset film thickness.

3. The computer-aided method for detecting the photoelectric conversion efficiency of a plasma device according to claim 2, wherein: The determining of the local electrical performance value of each preset film thickness at each preset moment based on the film resistance of the plasma device at each preset film thickness under different preset laser energy densities collected at each preset moment includes: The average value of all preset laser energy densities is determined as the overall laser energy density; Determine the average value of the sheet resistance of the plasma device at each preset film thickness under all preset laser energy densities collected at each preset time as the overall sheet resistance of each preset film thickness at each preset time; The local performance value of the electrical performance of each preset film thickness at each preset moment is determined according to the overall laser energy density and the overall film resistance of each preset film thickness at each preset moment.

4. The computer-aided method for detecting the photoelectric conversion efficiency of a plasma device according to claim 3, wherein: Determining the local electrical performance value of each preset film thickness at each preset moment based on the overall laser energy density and the overall film resistance of each preset film thickness at each preset moment includes: The ratio of the overall film resistance of each preset film thickness at each preset moment to the overall laser energy density is normalized to obtain a local electrical performance value of each preset film thickness at each preset moment.

5. The computer-aided method for detecting the photoelectric conversion efficiency of a plasma device according to claim 1, wherein: The method of determining the photoelectric conversion stability index corresponding to each preset film thickness according to the overall electrical performance value corresponding to the plasma device under different preset film thicknesses and the fitting errors corresponding to all corresponding target sub-curves thereof includes: Determine the target characteristic value of each preset film thickness under each corresponding target sub-curve according to the overall electrical performance value corresponding to the plasma device under each preset film thickness and the fitting error corresponding to each corresponding target sub-curve; The photoelectric conversion stability index corresponding to each preset film thickness is determined according to the difference between the target characteristic values of each preset film thickness and other preset film thicknesses under the corresponding target sub-curves of the same order.

6. The computer-aided method for detecting the photoelectric conversion efficiency of a plasma device according to claim 1, wherein: The photoelectric conversion efficiency test of the plasma device at each preset film thickness is performed based on the photoelectric conversion stability index corresponding to each preset film thickness and the pre-acquired IPCE value corresponding to the plasma device at each preset film thickness, including: Normalizing the product of the photoelectric conversion stability index corresponding to each preset film thickness and the IPCE value corresponding to the plasma device thereunder to obtain the target photoelectric conversion efficiency corresponding to each preset film thickness; According to the target photoelectric conversion efficiency corresponding to each preset film thickness, the photoelectric conversion efficiency of the plasma device under each preset film thickness is tested.

7. The computer-aided method for detecting the photoelectric conversion efficiency of a plasma device according to claim 6, wherein: The photoelectric conversion efficiency test of the plasma device at each preset film thickness is performed according to the target photoelectric conversion efficiency corresponding to each preset film thickness, including: If the target photoelectric conversion efficiency corresponding to the preset film thickness is greater than the preset efficiency threshold, it is determined that the photoelectric conversion efficiency of the plasma device under the preset film thickness is qualified; If the target photoelectric conversion efficiency corresponding to the preset film thickness is less than or equal to the preset efficiency threshold, it is determined that the photoelectric conversion efficiency of the plasma device at the preset film thickness is unqualified.

8. The computer-aided method for detecting the photoelectric conversion efficiency of a plasma device according to claim 6, wherein: The method further comprises: Obtaining data values of the plasma device at each preset film thickness and each preset output performance parameter; Determine the variance of the data values of the plasma device under each preset film thickness under all preset output performance parameters as a target variance corresponding to each preset film thickness; Screening candidate film thicknesses from all preset film thicknesses according to target variances corresponding to different preset film thicknesses; Determine the average of the data values of the plasma device under each candidate film thickness under all preset output performance parameters as the target average value corresponding to each candidate film thickness; According to the target mean values and photoelectric conversion stability indicators corresponding to different candidate film thicknesses, a reference film thickness is selected from all candidate film thicknesses; A reference film thickness with the maximum target photoelectric conversion efficiency is selected from all reference film thicknesses as the target film thickness.

9. The computer-aided method for detecting the photoelectric conversion efficiency of a plasma device according to claim 8, wherein: The method of screening candidate film thicknesses from all preset film thicknesses according to target variances corresponding to different preset film thicknesses includes: Determine any preset film thickness as a marked film thickness, and determine the difference between the target variance corresponding to the marked film thickness and the target variance corresponding to the previous preset film thickness as the variance difference corresponding to the marked film thickness; If the variance difference corresponding to the marked film thickness is less than or equal to a constant of 0, the marked film thickness is determined as a candidate film thickness.

10. The computer-aided method for detecting photoelectric conversion efficiency of a plasma device according to claim 8, wherein: The method of selecting a reference film thickness from all candidate film thicknesses based on target mean values and photoelectric conversion stability indicators corresponding to different candidate film thicknesses includes: Determine the relevant variation index corresponding to each candidate film thickness according to the target mean value and the photoelectric conversion stability index corresponding to each candidate film thickness; If the relevant variation index corresponding to the candidate film thickness is less than or equal to a constant 1, the candidate film thickness is determined as the reference film thickness.

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