Formation method of semiconductor structure

Abstract

A forming method of a semiconductor structure comprises the steps that a substrate is provided, target layers are formed on the substrate and extend in the same direction, or the target layers comprise first target layers extending in the first direction and arranged at intervals in the second direction and second target layers extending in the second direction and arranged at intervals in the first direction; the target layers are subjected to laser annealing treatment in a laser beam scanning mode, when the target layers extend in the same direction, the extension direction of the projection of the initial position of the laser beam on the substrate is the same as the extension direction of the target layers, or when the target layers comprise the first target layer and the second target layer, the extension direction of the projection of the initial position of the laser beam on the substrate is the same as the extension direction of the target layers. The projection of the initial position of the laser beam on the substrate is located on the angular bisector of the included angle between the extension direction of the first target layer and the extension direction of the second target layer. According to the embodiment of the invention, the width of the overlapped part of the scanning track of the laser beam and the target layer is relatively small, so that the heating difference degree of the target layers in different areas is reduced.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a method for forming a semiconductor structure. Background Art

[0002] With the rapid development of the semiconductor integrated circuit (IC) industry, semiconductor technology has continuously advanced towards smaller process nodes driven by Moore's law, enabling integrated circuits to develop in the direction of smaller volume, higher circuit precision, and higher circuit complexity.

[0003] During the development of integrated circuits, generally, while the functional density (i.e., the number of internal connection structures per chip) gradually increases, the geometric size (i.e., the minimum element size that can be produced using process steps) gradually decreases, which correspondingly increases the difficulty and complexity of integrated circuit manufacturing.

[0004] Due to the continuous increase in the difficulty and complexity of integrated circuit manufacturing, traditional annealing methods can no longer meet the process requirements, so laser annealing has emerged as the times require.

[0005] However, currently, the performance of semiconductor structures formed by laser annealing processes still needs to be improved. Summary of the Invention

[0006] The problem solved by the embodiments of the present invention is to provide a semiconductor structure and a method for forming the same to improve the performance of the semiconductor structure.

[0007] To solve the above problems, embodiments of the present invention also provide a method for forming a semiconductor structure, including: providing a substrate, on which a target layer is formed, the target layer extends along the same direction, or the target layer includes a first target layer extending along a first direction and arranged at intervals along a second direction, and a second target layer extending along the second direction and arranged at intervals along the first direction; performing laser annealing treatment on the target layer by means of laser beam scanning. When the target layer extends along the same direction, the extending direction of the projection of the initial position of the laser beam on the substrate is the same as the extending direction of the target layer, or when the target layer includes the first target layer and the second target layer, the projection of the initial position of the laser beam on the substrate is located on the angular bisector of the included angle between the extending direction of the first target layer and the extending direction of the second target layer.

[0008] Optionally, in the step of providing the substrate, a notch is provided at the edge position of the substrate, and the center line of the notch has a first angular relationship with the extending direction of the target layer; in the step of performing the laser annealing treatment, based on the first angular relationship, the projection of the initial position of the laser beam on the substrate has a second angular relationship with the center line of the notch.

[0009] Optionally, the steps of the laser annealing process include: based on the first angular relationship, initializing the relative position of the notch and the laser beam so that the projection of the initial position of the laser beam on the substrate is perpendicular to the center line of the notch; after the initialization process, scanning the target layer with the laser beam.

[0010] Optionally, the steps of initializing the relative position of the notch and the laser beam include: rotating the substrate around the center point of the substrate according to the initial position of the laser beam and the initial position of the notch.

[0011] Optionally, in the step of providing the substrate, the target layers all extend in the same direction, and the first angular relationship is: the center line of the notch is perpendicular to the extending direction of the target layer; in the step of performing the laser annealing process, the second angular relationship is: the projection of the initial position of the laser beam on the substrate is perpendicular to the center line of the notch.

[0012] Optionally, in the step of providing the substrate, the target layers all extend in the same direction, and the first angular relationship is: the center line of the notch is the same as the extending direction of the target layer; in the step of performing the laser annealing process, the second angular relationship is: the projection of the initial position of the laser beam on the substrate and the center line of the notch are on the same straight line.

[0013] Optionally, in the step of providing the substrate, the target layer includes a first target layer and a second target layer, and the first angular relationship is: the center line of the notch is the same as the extending direction of the first target layer, and a first included angle is formed between the center line of the notch and the extending direction of the second target layer; in the step of performing the laser annealing process, the second angular relationship is: a second included angle is formed between the projection of the initial position of the laser beam on the substrate and the center line of the notch, and the value of the second included angle is half of the value of the first included angle.

[0014] Optionally, after performing the laser annealing process on the target layer, it further includes: rotating the substrate 180° around the center point of the substrate; after the substrate is rotated 180° around the center point of the substrate, performing the laser annealing process on the target layer again by means of laser beam scanning.

[0015] Optionally, in the step of providing the substrate, the first direction is perpendicular to the second direction.

[0016] Optionally, in the step of providing the substrate, the target layer is an ion-doped gate layer.

[0017] Optionally, the material of the gate layer includes one or more of polysilicon, silicon germanium, and silicon carbide.

[0018] Optionally, in the step of performing laser annealing treatment on the target layer, the target layer is subjected to laser annealing treatment by means of arc scanning of a laser beam.

[0019] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0020] In the method for forming a semiconductor structure provided by the embodiment of the present invention, when the target layers all extend in the same direction, the extending direction of the projection of the initial position of the laser beam on the substrate is the same as the extending direction of the target layer, or, when the target layer includes a first target layer and a second target layer, the projection of the initial position of the laser beam on the substrate is located on the angular bisector of the included angle between the extending direction of the first target layer and the extending direction of the second target layer, so that during the process of scanning the target layer with the laser beam, the width of the overlapping part between the scanning trajectory of the laser beam and the target layer is small, which is beneficial to reducing the degree of thermal difference of the target layer in different regions, improving the thermal uniformity of the target layer in each region, and further improving the uniformity of the quality of the target layer after laser annealing treatment, and correspondingly improving the performance of the semiconductor structure.

[0021] In an alternative embodiment, the target layer is a gate layer doped with ions. Since the width of the overlapping part between the scanning trajectory of the laser beam and the target layer is small, the degree of thermal difference of the target layer in different regions is reduced, and the thermal uniformity of the target layer in each region is improved, so that the diffusion degree of the doped ions in the target layer is relatively consistent, and correspondingly, the uniformity of the resistance value of the gate layer is improved.

[0022] In an alternative embodiment, after the substrate is rotated 180° around the center point of the substrate, laser annealing treatment is performed again. Since the substrate is rotated 180° around the center point of the substrate, that is, the direction of the second laser beam scanning is opposite to the direction of the first laser beam scanning, it is convenient for the laser beam to scan the target layer more comprehensively, thereby further reducing the degree of thermal difference of the target layer in different regions; moreover, scanning the target layer with the laser beam twice is also convenient for the target layer to release part of the stress after the first laser beam scanning, which is beneficial to further improving the quality of the target layer. Description of the Drawings

[0023] Figures 1 to 15 is a schematic structural diagram corresponding to each step in an embodiment of the method for forming a semiconductor structure of the present invention. Detailed Embodiment

[0024] As can be seen from the background art, currently, the performance of the semiconductor structure formed by the laser annealing process still needs to be improved.

[0025] It has been found through research that in the field of semiconductor manufacturing, in order to enable semiconductor devices to meet different requirements, target layers with different extension directions are usually designed according to corresponding requirements. Therefore, in the prior art, it is easy for the width of the overlapping part between the scanning trajectory of the laser beam and the target layer to be relatively large, so that the heating difference degree of the target layer in different regions is relatively large, and further the uniformity of the quality of the target layer after laser beam scanning treatment is poor, and correspondingly the performance of the semiconductor structure formed by the laser annealing process needs to be improved.

[0026] To solve the above technical problems, an embodiment of the present invention provides a method for forming a semiconductor structure, including: providing a substrate, on which a target layer is formed, the target layer extends along the same direction, or the target layer includes a first target layer extending along a first direction and arranged at intervals along a second direction, and a second target layer extending along the second direction and arranged at intervals along the first direction; performing laser annealing treatment on the target layer by means of laser beam scanning. When the target layer extends along the same direction, the extension direction of the projection of the initial position of the laser beam on the substrate is the same as the extension direction of the target layer, or when the target layer includes a first target layer and a second target layer, the projection of the initial position of the laser beam on the substrate is located on the angular bisector of the included angle between the extension direction of the first target layer and the extension direction of the second target layer.

[0027] In the method for forming a semiconductor structure provided by the embodiment of the present invention, when the target layer extends along the same direction, the extension direction of the projection of the initial position of the laser beam on the substrate is the same as the extension direction of the target layer, or when the target layer includes a first target layer and a second target layer, the projection of the initial position of the laser beam on the substrate is located on the angular bisector of the included angle between the extension direction of the first target layer and the extension direction of the second target layer, so that during the process of laser beam scanning of the target layer, the width of the overlapping part between the scanning trajectory of the laser beam and the target layer is relatively small, which is beneficial to reducing the heating difference degree of the target layer in different regions, improving the heating uniformity of each region of the target layer, and further improving the uniformity of the quality of the target layer after laser annealing treatment, and correspondingly also improving the performance of the semiconductor structure.

[0028] In order to make the above objects, features and advantages of the embodiments of the present invention more obvious and understandable, the following detailed description of the specific embodiments of the present invention will be given in conjunction with the accompanying drawings.

[0029] Figures 1 to 15 Schematic structural diagrams corresponding to each step in an embodiment of the method for forming a semiconductor structure of the present invention.

[0030] Reference Figures 1 to 3, a substrate is provided, on which a target layer 110 is formed. The target layers 110 all extend in the same direction, or the target layer 110 includes a first target layer 111 extending along a first direction Y and arranged at intervals along a second direction X, and a second target layer 112 extending along the second direction X and arranged at intervals along the first direction Y.

[0031] Among them, Figure 1 is a schematic diagram of the direction in which the target layers in one embodiment all extend in the same direction. Figure 2 is a schematic diagram of the direction in which the target layers in another embodiment all extend in the same direction. Figure 3 is a schematic diagram of the target layer including a first target layer and a second target layer in yet another embodiment.

[0032] Specifically, Figure 1 the target layers in [[]] all extend in the second direction. Figure 2 the target layers in [[]] all extend in the first direction.

[0033] The substrate 100 is used to provide a platform for subsequent process steps.

[0034] In this embodiment, the substrate 100 is a silicon substrate. In other embodiments, the material of the substrate can also be other materials such as germanium, silicon germanide, silicon carbide, gallium arsenide, or indium gallium, and the substrate can also be other types of substrates such as silicon-on-insulator or germanium-on-insulator substrates.

[0035] It should be noted that the substrate 100 can be a planar substrate or a substrate with a channel protrusion.

[0036] The target layer 110 is a film layer to be scanned by a laser beam.

[0037] In this embodiment, in the step of providing the substrate 100, the target layer 110 is an ion-doped gate layer.

[0038] In subsequent steps, the target layer 110 will be subjected to laser annealing treatment by scanning with a laser beam. Since the width of the overlapping part between the scanning trajectory of the laser beam and the target layer 110 is small, the degree of thermal difference of the target layer 110 in different regions is reduced, and the thermal uniformity of each region of the target layer 110 is improved. As a result, the diffusion degree of the doped ions in the target layer 110 is relatively consistent, and the uniformity of the resistance value of the gate layer is correspondingly improved.

[0039] The material of the gate layer includes one or more of polysilicon, silicon germanium, and silicon carbon.

[0040] In this embodiment, the material of the gate layer includes polysilicon. Correspondingly, the ion-doped polysilicon is used as a polysilicon resistor after laser annealing treatment, such as a square poly (polysilicon) resistor.

[0041] The polysilicon resistor has the advantages of high stability, strong anti-interference ability, and good voltage resistance.

[0042] It should be noted that the gate layer may be doped with N-type ions (such as phosphorus ions, etc.) or P-type ions (such as boron ions, etc.).

[0043] In this embodiment, in the step of providing the substrate 100, a notch 101 is provided at the edge position of the substrate 100, and a first angular relationship exists between the center line C1 of the notch 101 and the extending direction of the target layer 110.

[0044] Specifically, the notch 101 is located at the edge position of the bottommost part of the substrate 100, and the notch 101 is used to mark the wafer direction and crystal orientation, that is, the notch 101 provides a certain reference coordinate system, reducing the difficulty of subsequent process steps and facilitating the performance of the semiconductor structure to meet the design requirements.

[0045] It should be noted that the notch 101 may be a V-shaped or U-shaped groove, or other shapes.

[0046] Here, the center line C1 of the notch 101 refers to the straight line passing through the midpoint of the notch 101 and the center point O of the substrate.

[0047] As Figure 1 shown, in one embodiment, in the step of providing the substrate 100, the target layers 110 all extend in the same direction, and the first angular relationship is that the center line C1 of the notch 101 is perpendicular to the extending direction of the target layer 110. 。

[0048] As Figure 2 shown, in another embodiment, in the step of providing the substrate 100, the target layers 110 all extend in the same direction, and the first angular relationship is that the center line C1 of the notch 101 is the same as the extending direction of the target layer 110.

[0049] The center line C1 of the notch 101 being perpendicular to the extending direction of the target layer 110, or the center line C1 of the notch 101 being the same as the extending direction of the target layer 110, facilitates determining the extending direction of the target layer 110 through the center line C1 of the notch 101 in the subsequent laser annealing treatment step.

[0050] As Figure 3As shown, in yet another specific embodiment, in the step of providing the substrate 100, the target layer 110 includes a first target layer 111 and a second target layer 112. The first angular relationship is that the center line C1 of the notch is the same as the extending direction of the first target layer 111, and a first included angle θ1 is formed between the center line C1 of the notch 101 and the extending direction of the second target layer 112.

[0051] The center line C1 of the notch 101 is the same as the extending direction of the first target layer 111, and a first included angle θ1 is formed between the center line C1 of the notch 101 and the extending direction of the second target layer 112, which is convenient for subsequently determining the extending directions of the first target layer 111 and the second target layer 112 through the center line C1 of the notch 101 in the step of laser annealing treatment.

[0052] In this embodiment, in the step of providing the substrate 100, the first direction Y is perpendicular to the second direction X.

[0053] The first direction Y being perpendicular to the second direction X is beneficial to reducing the process difficulty of forming the first target layer 111 and the second target layer 112. Moreover, in the subsequent step of laser annealing treatment, it is also beneficial to further reduce the difficulty of determining the extending directions of the first target layer 111 and the second target layer 112 through the center line C1 of the notch 101.

[0054] Correspondingly, the first included angle θ1 formed between the center line C1 of the notch 101 and the extending direction of the second target layer 112 is equal to 90°.

[0055] Reference Figures 4 to 9 , the target layer 110 is subjected to laser annealing treatment by means of laser beam scanning. When the target layer 110 extends in the same direction, the extending direction of the projection C2 of the initial position of the laser beam on the substrate 100 is the same as the extending direction of the target layer 110 (as shown in Figure 4 and Figure 6 ), or when the target layer 110 includes a first target layer 111 and a second target layer 112, the projection C2 of the initial position of the laser beam on the substrate is located on the angular bisector of the included angle between the extending direction of the first target layer 111 and the extending direction of the second target layer 112 (as shown in Figure 8 ).

[0056] It is understandable that the projection of the initial position of the laser beam on the substrate 100 lies on the angular bisector of the included angle between the extending directions of the first target layer 111 and the second target layer 112. That is, the included angle θ3 between the projection C2 of the initial position of the laser beam on the substrate 100 and the extending direction of the first target layer 111 is equal to the included angle θ4 between the projection C2 of the initial position of the laser beam on the substrate 100 and the extending direction of the second target layer 112.

[0057] Wherein, Figure 4 is Figure 1 a schematic structural diagram at the start of the laser annealing process, Figure 5 is Figure 4 a schematic diagram of the microstructure of, Figure 6 is Figure 2 a schematic structural diagram at the start of the laser annealing process, Figure 7 is Figure 6 a schematic diagram of the microstructure of, Figure 8 is Figure 3 a schematic structural diagram at the start of the laser annealing process, Figure 9 is Figure 8 a schematic diagram of the microstructure of.

[0058] Here, the schematic diagram of the microstructure refers to the schematic diagram of the structure between the extending direction of the target layer 110 and the scanning track of the laser beam within a relatively small length range, such as a length range less than 1 nanometer.

[0059] When the target layers 110 all extend in the same direction, the extending direction of the projection C2 of the initial position of the laser beam on the substrate 100 is the same as the extending direction of the target layers 110. Or, when the target layer 110 includes the first target layer 111 and the second target layer 112, the projection of the initial position of the laser beam on the substrate lies on the angular bisector of the included angle between the extending directions of the first target layer 111 and the second target layer 112, so that during the process of scanning the target layer 110 with the laser beam, the width of the overlapping part between the scanning track 120 of the laser beam and the target layer 110 is relatively small, which is beneficial to reducing the degree of thermal difference of the target layer 110 in different regions, improving the thermal uniformity of each region of the target layer 110, and further improving the uniformity of the quality of the target layer 110 after the laser annealing process, and correspondingly improving the performance of the semiconductor structure.

[0060] It should be noted that the scanning track 120 of the laser beam may have a certain degree of overlap. For example, the scanning track 120 of the laser beam has a 50% overlap degree, or it may not have an overlap degree, that is, the overlap degree of the scanning track 120 of the laser beam is 0%.

[0061] It should also be noted that the included angle between the extending directions of the first target layer 111 and the second target layer 112 refers to an angle less than 90°.

[0062] Here, the initial position of the laser beam refers to the position where the laser beam is located at the start of the laser annealing process, that is, the position where the laser beam is located at the start of the laser beam scanning.

[0063] In this embodiment, in the step of performing laser annealing on the target layer 110, the target layer 110 is subjected to laser annealing by means of arc-shaped scanning of the laser beam.

[0064] Generally, the edge region of the substrate 100 is first scanned with the laser beam, then the central region of the substrate 100 is scanned with the laser beam, and finally the remaining edge region is scanned with the laser beam. That is, as shown by the arrow direction, the laser beam is scanned in each region in sequence. It can be understood that the arrow direction is also the moving direction of the scanning trajectory 120.

[0065] Laser annealing is a microsecond-level annealing process. It uses the laser beam to quickly scan the surface of the target layer 110, so as to achieve the effect of rapid annealing of a certain differential region on the substrate 100. The scanning method of the laser beam is relatively special, generally arc-shaped scanning. This scanning method is more conducive to the heat dissipation of a certain differential region on the substrate 100, thereby reducing the warpage curvature of the wafer.

[0066] Here, the arc-shaped scanning method refers to the method in which the scanning trajectory 120 of the laser beam is an arc.

[0067] In this embodiment, in the step of providing the substrate 100, there is a notch 101 at the edge position of the bottommost part of the substrate 100, and the center line C1 of the notch 101 has a first angular relationship with the extending direction of the target layer 110. Correspondingly, in the step of performing the laser annealing process, based on the first angular relationship, the projection C2 of the initial position of the laser beam on the substrate 100 has a second angular relationship with the center line C1 of the notch 101.

[0068] When the target layer 110 extends in the same direction, the second angular relationship is used to make the extending direction of the projection C2 of the initial position of the laser beam on the substrate 100 the same as the extending direction of the target layer 110; when the target layer 110 includes a first target layer 111 and a second target layer 112, the second angular relationship is used to make the projection C2 of the initial position of the laser beam on the substrate 100 located on the angular bisector of the included angle between the extending directions of the first target layer 112 and the second target layer 112.

[0069] It can be understood that the center line C1 of the notch 101 has a first angular relationship with the extending direction of the target layer 110. The first angular relationship is usually fixed, and the notch 101 is convenient for positioning. Therefore, through the first angular relationship, a second angular relationship is determined, which facilitates the projection C2 of the initial position of the laser beam on the substrate 100 to satisfy the above requirements with the extending direction of the target layer 110.

[0070] In this embodiment, the steps of the laser annealing treatment include: based on the first angular relationship, initializing the relative positions of the notch 101 and the laser beam, so that the projection C2 of the initial position of the laser beam on the substrate 100 and the center line C2 of the notch 101 reach a second angular relationship; after the initialization process, scanning the target layer 110 with the laser beam.

[0071] First, based on the first angular relationship, initialize the relative positions of the notch 101 and the laser beam, so that the projection C2 of the initial position of the laser beam on the substrate 100 and the center line C1 of the notch 101 reach a second angular relationship, and then scan the target layer 110 with the laser beam, which is beneficial to reducing the difficulty of the laser annealing treatment.

[0072] Specifically, the steps of initializing the relative positions of the notch 101 and the laser beam include: rotating the substrate 100 around the center point O of the substrate according to the initial position of the laser beam and the initial position of the notch 101.

[0073] Rotating the substrate 100 around the center point O of the substrate according to the initial position of the laser beam and the initial position of the notch 101 is beneficial to reducing the relative displacement between the substrate 100 and the initial position of the laser beam, as well as between the target layer 110 and the initial position of the laser beam during the initialization process, thereby reducing the difficulty of the initialization process and further reducing the difficulty of the laser annealing treatment.

[0074] As Figure 1 shown, in one embodiment, in the step of providing the substrate 100, the target layers 110 all extend in the same direction, and the first angular relationship is: the center line C1 of the notch 101 is perpendicular to the extending direction of the target layer 110. Correspondingly, as Figures 4 to 5 shown, in the step of performing the laser annealing treatment, the second angular relationship is: the projection C2 of the initial position of the laser beam on the substrate 100 is perpendicular to the center line C1 of the notch 101.

[0075] As an example, the center line C1 of the notch 101 rotates counterclockwise by 90°, so that the projection C2 of the initial position of the laser beam on the substrate 100 is perpendicular to the center line C1 of the notch 101. In other embodiments, the center line of the notch can also rotate clockwise by 90°, so that the projection of the initial position of the laser beam on the substrate is perpendicular to the center line of the notch.

[0076] As Figure 2 shown, in another embodiment, in the step of providing the substrate 100, the target layer 110 extends in the same direction, and the first angular relationship is: the center line C1 of the notch 101 is the same as the extending direction of the target layer 110. Correspondingly, as Figures 6 to 7 shown, in the step of performing the laser annealing treatment, the second angular relationship is: the projection C2 of the initial position of the laser beam on the substrate 100 and the center line C1 of the notch 101 are on the same straight line 。

[0077] As an example, the center line C1 of the notch 101 rotates by 0°, so that the projection C2 of the initial position of the laser beam on the substrate 100 and the center line C1 of the notch 101 are on the same straight line. The center line C1 of the notch 101 rotates by 0°, that is, no rotation is required, which is beneficial to saving time and improving process efficiency. In other embodiments, the center line C1 of the notch 101 can also rotate by 180°, so that the projection of the initial position of the laser beam on the substrate and the center line of the notch are on the same straight line.

[0078] As Figure 3 shown, in yet another embodiment, in the step of providing the substrate 100, the target layer 110 includes a first target layer 111 and a second target layer 112. The first angular relationship is: the center line C1 of the notch is the same as the extending direction of the first target layer 111, and a first included angle θ1 is formed between the center line C1 of the notch 101 and the extending direction of the second target layer 112. Correspondingly, as Figures 8 to 9 shown, in the step of performing the laser annealing treatment, the second angular relationship is: a second included angle θ2 is formed between the projection C2 of the initial position of the laser beam on the substrate 100 and the center line C1 of the notch 101, and the value of the second included angle θ2 is half of the value of the first included angle θ1.

[0079] As an example, the first included angle θ1 is 90°, and the center line C1 of the notch 101 rotates counterclockwise by 45°. As a result, the included angle θ2 formed between the projection C2 of the initial position of the laser beam on the substrate 100 and the center line C1 of the notch 101 is half of the value of the first included angle θ1, that is, the second included angle θ2 is 45°. When the center line C1 of the notch 101 rotates counterclockwise by 45°, the rotation angle is small, which is beneficial to saving time and improving the process efficiency. In other embodiments, when the first included angle is 90°, the center line of the notch can also rotate counterclockwise by 225°, so that the included angle formed between the projection of the initial position of the laser beam on the substrate and the center line of the notch is half of the value of the first included angle.

[0080] Reference Figures 10 to 15 , in this embodiment, after the laser annealing treatment of the target layer 110, it further includes: rotating the substrate 100 by 180° around the center point O of the substrate; after the substrate 100 rotates by 180° around the center point O of the substrate, the target layer 110 is subjected to laser annealing treatment again by means of laser beam scanning.

[0081] Among them, Figure 10 is Figure 4 the schematic structural diagram during the second laser annealing treatment, Figure 11 is Figure 10 the schematic microstructure diagram of Figure 12 is Figure 6 the schematic structural diagram during the second laser annealing treatment, Figure 13 is Figure 12 the schematic microstructure diagram of Figure 14 is Figure 8 the schematic structural diagram during the second laser annealing treatment, Figure 15 is Figure 14 the schematic microstructure diagram of.

[0082] After the substrate rotates by 180° around the center point O of the substrate and is subjected to laser annealing treatment again, since the substrate 100 rotates by 180° around the center point O of the substrate, that is, the direction of the second laser beam scanning is opposite to the direction of the first laser beam scanning, it is convenient for the laser beam to scan the target layer 110 more comprehensively, thereby further reducing the degree of heat reception difference of the target layer 110 in different regions; moreover, scanning the target layer 110 with the laser beam twice is also convenient for the target layer 110 to release part of the stress after the first laser beam scanning, which is beneficial to further improving the quality of the target layer 110.

[0083] The method of the second laser annealing treatment is the same as that of the first laser annealing treatment, and will not be elaborated here.

[0084] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A method for forming a semiconductor structure, characterized in that, Including: Providing a substrate on which a target layer is formed, the target layer extending in the same direction, or the target layer including a first target layer extending in a first direction and arranged at intervals in a second direction, and a second target layer extending in the second direction and arranged at intervals in the first direction; Performing laser annealing treatment on the target layer by means of laser beam scanning. When the target layer extends in the same direction, the extending direction of the projection of the initial position of the laser beam on the substrate is the same as the extending direction of the target layer. Or, when the target layer includes a first target layer and a second target layer, the projection of the initial position of the laser beam on the substrate is located on the angular bisector of the included angle between the extending direction of the first target layer and the extending direction of the second target layer.

2. The method for forming a semiconductor structure according to claim 1, wherein In the step of providing the substrate, a notch is provided at the edge position of the substrate, and the center line of the notch has a first angular relationship with the extending direction of the target layer; In the step of performing the laser annealing treatment, based on the first angular relationship, the projection of the initial position of the laser beam on the substrate and the center line of the notch have a second angular relationship.

3. The method for forming a semiconductor structure according to claim 2, wherein The step of performing the laser annealing treatment includes: initializing the relative position of the notch and the laser beam based on the first angular relationship, so that the projection of the initial position of the laser beam on the substrate and the center line of the notch reach the second angular relationship; after the initialization process, performing laser beam scanning on the target layer.

4. The method for forming a semiconductor structure according to claim 3, wherein The step of initializing the relative position of the notch and the laser beam includes: rotating the substrate around the center point of the substrate according to the initial position of the laser beam and the initial position of the notch.

5. The method for forming a semiconductor structure according to any one of claims 2 to 4, characterized in that, In the step of providing the substrate, the target layer extends in the same direction, and the first angular relationship is: the center line of the notch is perpendicular to the extending direction of the target layer; In the step of performing the laser annealing treatment, the second angular relationship is: the projection of the initial position of the laser beam on the substrate is perpendicular to the center line of the notch.

6. The method for forming a semiconductor structure according to any one of claims 2 to 4, characterized in that, In the step of providing the substrate, the target layer extends in the same direction, and the first angular relationship is: the center line of the notch is the same as the extending direction of the target layer; In the step of performing the laser annealing treatment, the second angular relationship is: the projection of the initial position of the laser beam on the substrate and the center line of the notch are located on the same straight line.

7. The method for forming a semiconductor structure according to any one of claims 2 to 4, characterized in that, In the step of providing the substrate, the target layer includes a first target layer and a second target layer, and the first angular relationship is: the center line of the notch is the same as the extending direction of the first target layer, and a first included angle is formed between the center line of the notch and the extending direction of the second target layer; In the step of performing the laser annealing treatment, the second angular relationship is: a second included angle is formed between the projection of the initial position of the laser beam on the substrate and the center line of the notch, and the value of the second included angle is half of the value of the first included angle.

8. The method for forming a semiconductor structure according to any one of claims 1 to 4, characterized in that, After performing the laser annealing treatment on the target layer, it further includes: rotating the substrate around the center point of the substrate by 180°; After the substrate is rotated 180° around the center point of the substrate, the target layer is again subjected to laser annealing treatment by means of laser beam scanning.

9. The method for forming a semiconductor structure according to any one of claims 1 to 4, characterized in that, In the step of providing the substrate, the first direction is perpendicular to the second direction.

10. The method for forming a semiconductor structure according to any one of claims 1 to 4, characterized in that, In the step of providing the substrate, the target layer is an ion-doped gate layer.

11. The method for forming a semiconductor structure according to claim 10, wherein The material of the gate layer includes one or more of polysilicon, germanium silicon, and carbon silicon.

12. The method for forming a semiconductor structure according to any one of claims 1 to 4, characterized in that, In the step of performing laser annealing treatment on the target layer, the target layer is subjected to laser annealing treatment by means of arc-shaped scanning of a laser beam.

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