Bearing device and semiconductor process equipment

Abstract

The invention provides a bearing device and semiconductor process equipment, the bearing device comprises a bearing main body and a plurality of sealing parts, the bearing main body is used for bearing a wafer, the bearing main body is provided with a plurality of first hole channels, the first hole channels are used for allowing liftable supporting parts to pass through, and the plurality of supporting parts can rise and extend out of the first hole channels to support the wafer. The sealing component comprises sealing films, the multiple sealing films cover the multiple first hole channels in a one-to-one correspondence mode to seal the multiple first hole channels in a one-to-one correspondence mode, and the sealing films have preset elongation at break; and the elongation at break meets the requirement that the sealing film can maintain covering and sealing of the first pore channel when the supporting part extends out of the first pore channel and rises to the highest state. According to the bearing device and the semiconductor process equipment provided by the invention, the temperature uniformity of the wafer in the semiconductor process can be improved on the basis of realizing the sealing of the first hole channel, so that the result uniformity of the semiconductor process can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular, to a carrier device and a semiconductor processing apparatus. Background Art

[0002] In semiconductor processing apparatuses, an electrostatic chuck can be used as a carrier device to carry a wafer. In semiconductor processes, the electrostatic chuck can adsorb the wafer through electrostatic adsorption force, and moreover, by applying a radio frequency bias voltage to the electrostatic chuck, plasma can be attracted to accelerate the bombardment of the wafer to etch the wafer.

[0003] In the prior art, a plurality of support protrusions and a plurality of sealing protrusions are provided on the electrostatic chuck. A plurality of first channels and second channels are arranged inside the electrostatic chuck. The plurality of support protrusions are spaced apart to support the wafer and provide a preset gap between the wafer and the electrostatic chuck. The second channel is used to introduce back gas into the preset gap to form a back gas layer in the preset gap. With the aid of the back gas layer, uniform heat conduction between the wafer and the electrostatic chuck can be achieved, so that the temperature of the wafer is uniform. The plurality of first channels are spaced apart, and a liftable ejector pin is arranged in each first channel. The plurality of ejector pins can realize the transfer of the wafer between the transfer robot and the electrostatic chuck through lifting. The sealing protrusions are annular, and the plurality of sealing protrusions are arranged in one-to-one correspondence with the plurality of first channels and protrude into the preset gap from the first channels. The sealing protrusions are used to seal the corresponding first channels, separate the first channels from the back gas layer, and prevent the back gas from entering the first channels, so as to form plasma under the action of the radio frequency bias voltage applied to the electrostatic chuck, thereby avoiding the occurrence of arcing due to the formation of a grounding circuit of the wafer caused by the plasma in the first channels.

[0004] However, in the prior art, the part of the wafer corresponding to the sealing protrusion does not conduct heat through the back gas, but through the sealing protrusion. The material of the sealing protrusion is usually a material with a heat conduction ability greater than that of the back gas. Moreover, in semiconductor processes, the ejector pin holes are also evacuated. Since the sealing protrusions separate the first channels from the back gas layer, the part of the wafer corresponding to the first channels cannot conduct heat through the back gas in semiconductor processes, and vacuum cannot conduct heat, resulting in poor temperature uniformity of the wafer in semiconductor processes, and further poor uniformity of semiconductor process results such as etching. Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and provides a carrier device and a semiconductor processing apparatus, which can improve the temperature uniformity of the wafer in semiconductor processes on the basis of realizing the sealing of the first channels, thereby improving the uniformity of semiconductor process results.

[0006] To achieve the object of the present invention, a carrying device is provided, which includes a carrying body and a plurality of sealing components. The carrying body is used to carry a wafer. The carrying body is provided with a plurality of first channels, and the first channels are used for a liftable support component to pass through. A plurality of the support components can rise out of the first channels to support the wafer, or descend and retract into the first channels. The sealing components include sealing films, and a plurality of the sealing films respectively cover a plurality of the first channels in a one-to-one correspondence to seal the first channels in a one-to-one correspondence. The sealing film has a preset elongation at break, and the elongation at break satisfies that the sealing film can maintain the covering and sealing of the first channel when the support component rises out of the first channel to the highest state.

[0007] Optionally, the sealing component further includes a fixing ring. The carrying body is provided with a plurality of assembly grooves, which are recessed relative to the carrying body, and a plurality of the assembly grooves communicate with a plurality of the first channels in a one-to-one correspondence. The fixing ring is embedded in the assembly groove and can be passed through by the support component. The sealing film covers the side of the fixing ring facing away from the first channel and is hermetically connected to the fixing ring.

[0008] Optionally, the radial dimension of the assembly groove is larger than the radial dimension of the first channel, and the outer diameter dimension of the fixing ring is equal to the radial dimension of the assembly groove.

[0009] Optionally, the inner diameter dimension of the fixing ring is larger than or equal to the radial dimension of the first channel, and the fixing ring is coaxially arranged with the first channel.

[0010] Optionally, the edge of the sealing film is flush with the outer edge of the fixing ring.

[0011] Optionally, the sealing film is flush with the notch end face of the assembly groove.

[0012] Optionally, when there are a plurality of the sealing films, the plurality of the sealing films are stacked on the fixing ring.

[0013] Optionally, the sealing film and the fixing ring are bonded to each other, and / or the fixing ring and the assembly groove are bonded to each other.

[0014] Optionally, the material of the sealing film includes silane, and / or the range of the elongation at break is 300%-700%.

[0015] The present invention also provides a semiconductor process equipment, which includes a process chamber and the carrying device provided by the present invention. The carrying device is arranged in the process chamber and is used to carry a wafer.

[0016] The present invention has the following beneficial effects:

[0017] The carrier device provided by the present invention seals the multiple first channels one by one by arranging multiple sealing films to cover the multiple first channels one by one. Since the sealing film has a preset elongation at break, and the elongation at break satisfies the requirement that the sealing film can maintain the covering and sealing of the first channel when the supporting component extends out of the first channel and rises to the highest state, the sealing film can cover and seal the first channel when the supporting component rises and extends out of the first channel to support the wafer, or when the supporting component descends and retracts into the first channel, thereby achieving the sealing of the first channel. Moreover, compared with the prior art, through the covering and sealing of the first channel by the sealing film, there is no need to arrange an annular sealing protrusion corresponding to the ejector pin hole to seal the ejector pin hole, thereby avoiding the influence of the sealing protrusion on the back gas, so that the part of the wafer on the carrier body corresponding to the first channel and the rest of the wafer can conduct heat through the back gas, thereby improving the temperature uniformity of the wafer in the semiconductor process, and further improving the uniformity of the semiconductor process results.

[0018] The semiconductor process equipment provided by the present invention uses the carrier device provided by the present invention to carry the wafer, thereby being able to improve the temperature uniformity of the wafer in the semiconductor process on the basis of achieving the first channel sealing, thereby being able to improve the uniformity of the semiconductor process results. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of the structure of the carrying device provided by the embodiment of the present invention when the sealing film is not lifted up;

[0020] Figure 2 A schematic diagram of the structure of the carrying device provided by the embodiment of the present invention when the sealing film is lifted up;

[0021] Figure 3 A schematic diagram of the structure of a sealing component provided by an embodiment of the present invention;

[0022] Description of reference numerals:

[0023] 1-carrying body; 2-sealing component; 21-sealing film; 22-fixing ring; 3-first channel;

[0024] 4-support component; 5-back air layer; 61-top adhesive; 62-bottom adhesive; 100-wafer. DETAILED DESCRIPTION

[0025] In order to enable those skilled in the art to better understand the technical solution of the present invention, the carrier device and semiconductor process equipment provided by the present invention are described in detail below with reference to the accompanying drawings.

[0026] like Figures 1 - 3As shown in the figure, an embodiment of the present invention provides a carrier device, which includes a carrier body 1 and a plurality of sealing components 2. The carrier body 1 is used to carry a wafer 100. The carrier body 1 is provided with a plurality of first channels 3, and the first channels 3 are used for a liftable support component 4 to pass through. A plurality of support components 4 can rise out of the first channels 3 to support the wafer 100, or descend and retract into the first channels 3. The sealing component 2 includes a sealing film 21. A plurality of sealing films 21 respectively cover a plurality of first channels 3 in a one-to-one correspondence to seal the plurality of first channels 3 in a one-to-one correspondence. The sealing film 21 has a preset elongation at break, and the elongation at break satisfies that the sealing film 21 can maintain the covering and sealing of the first channel 3 when the support component 4 rises out of the first channel 3 to the highest state.

[0027] For the carrier device provided by the embodiment of the present invention, by providing a plurality of sealing films 21 to respectively cover a plurality of first channels 3 in a one-to-one correspondence to seal the plurality of first channels 3 in a one-to-one correspondence. Since the sealing film 21 has a preset elongation at break, and the elongation at break satisfies that the sealing film 21 can maintain the covering and sealing of the first channel 3 when the support component 4 rises out of the first channel 3 to the highest state, the sealing film 21 can cover and seal the first channel 3 both when the support component 4 rises out of the first channel 3 to support the wafer 100 and when the support component 4 descends and retracts into the first channel 3, so as to realize the sealing of the first channel 3. Compared with the prior art, by covering and sealing the first channel 3 with the sealing film 21, there is no need to provide an annular sealing protrusion corresponding to the thimble hole to seal the thimble hole, thus avoiding the influence of the sealing protrusion on the back gas, enabling the part of the wafer 100 on the carrier body 1 corresponding to the first channel 3 and the rest of the wafer 100 to conduct heat through the back gas, then improving the temperature uniformity of the wafer 100 in the semiconductor process, and further improving the uniformity of the semiconductor process results.

[0028] In practical applications, before the semiconductor process starts, multiple support components 4 can be located in the first channel 3. The transfer manipulator can carry the wafer 100 into the process chamber of the semiconductor process equipment and be located above the carrier body 1. Then, the multiple support components 4 can rise from the first channel 3 and extend out of the first channel 3 to support the wafer 100 on the transfer manipulator, lift the wafer 100 from the transfer manipulator. After that, the transfer manipulator can withdraw to the outside of the process chamber. Then, the multiple support components 4 can support the wafer 100 to descend and retract into the first channel 3 so that the wafer 100 can descend and be placed on the carrier body 1 and be carried by the carrier body 1. When the carrier body 1 carries the wafer 100, there can be a preset gap between the wafer 100 and the carrier body 1. Then, the semiconductor process can be carried out. During the semiconductor process, back gas can be introduced into the preset gap to form a back gas layer 5 in the preset gap, so as to achieve uniform heat conduction between the wafer 100 and the electrostatic chuck by means of the back gas. After the semiconductor process is completed, the multiple support components 4 can rise from the first channel 3 and extend out of the first channel 3 to support the wafer 100 on the carrier body 1, lift the wafer 100 from the carrier body 1. After that, the transfer manipulator can enter the process chamber of the semiconductor process equipment and be located below the wafer 100. Then, the multiple support components 4 can descend and retract into the first channel 3 so that the wafer 100 can descend and be placed on the transfer manipulator and be carried by the transfer manipulator. After that, the transfer manipulator can carry the wafer 100 and withdraw to the outside of the process chamber.

[0029] When the support component 4 is in the first channel 3, the sealing film 21 can be in a flat state (as Figure 1 shown), and can cover and seal the first channel 3. During the process of the support component 4 rising from the first channel 3 and extending out of the first channel 3 to support the wafer 100, the support component 4 will also lift the sealing film 21 covering the first channel 3 (as Figure 2 shown). Since the sealing film 21 has a preset elongation at break, and the elongation at break satisfies that the sealing film 21 can maintain the covering and sealing of the first channel 3 when the support component 4 extends out of the first channel 3 and rises to the highest state. That is to say, the sealing film 21 will not rupture due to being lifted by the support component 4, and the sealing film 21 can still maintain the covering and sealing of the first channel 3 when the support component 4 rises and extends out of the first channel 3 to support the wafer 100. During the process of the support component 4 descending and retracting into the first channel 3, the lifted sealing film 21 gradually returns to a flat state, that is, returns to the flat state when the support component 4 is in the first channel 3 and has not risen and extended out of the first channel 3 (as Figure 1As shown), the first channel 3 can still be covered and sealed at this time, so that the sealing film 21 can cover and seal the first channel 3 when the supporting component 4 rises and extends out of the first channel 3 to support the wafer 100, or when the supporting component 4 descends and retracts into the first channel 3, thereby enabling the sealing of the first channel 3 to be achieved with the help of the sealing film 21.

[0030] During the semiconductor process, the carrier device provided in the embodiment of the present invention covers and seals the first channel 3 through the sealing film 21. Therefore, compared with the prior art, there is no need to set a ring-shaped sealing convexity corresponding to the ejector hole to seal the ejector hole, which can avoid the influence of the sealing convexity in the preset gap on the flow of the back gas, so that the back gas introduced into the preset gap can flow to the bottom of the part of the wafer 100 corresponding to the first channel 3 on the carrier body 1 (that is, above the sealing film 21), so that the part of the wafer 100 on the carrier body 1 corresponding to the first channel 3 and the rest of the wafer 100 can be heat-conducted by the back gas, thereby improving the temperature uniformity of the wafer 100 in the semiconductor process, and further improving the uniformity of the semiconductor process results.

[0031] Optionally, the carrier body 1 may include an electrostatic chuck.

[0032] Optionally, the supporting component 4 may include a ejector pin.

[0033] Optionally, the support component 4 may be made of ceramic.

[0034] Optionally, the number of the first channels 3 may be three.

[0035] Optionally, the backgas may include helium.

[0036] In one embodiment of the present invention, the sealing component 2 also includes a fixing ring 22, the supporting body 1 is provided with a plurality of assembly grooves, the assembly grooves are recessed relative to the supporting body 1, and the plurality of assembly grooves are connected to the plurality of first channels 3 one by one, the fixing ring 22 is embedded in the assembly groove, and can allow the supporting component 4 to pass through, and the sealing membrane 21 covers the side of the fixing ring 22 away from the first channel 3, and is sealed and connected to the fixing ring 22.

[0037] Specifically, the assembly groove is located at the top of the first channel 3, and the first channel 3 communicates with the bottom of the assembly groove. The fixing ring 22 is embedded in the assembly groove, the sealing film 21 covers the top of the fixing ring 22, and the sealing film 21 is sealed with the fixing ring 22, so that the sealing film 21 can cover and seal the first channel 3. That is to say, the sealing film 21 is fixedly assembled in the first channel 3 through the fixing ring 22, and the sealing film 21 is sealed with the fixing ring 22, so that the sealing member 2 can seal the first channel 3. By recessing the assembly groove relative to the carrier body 1 and embedding the fixing ring 22 in the assembly groove, it is possible to prevent the fixing ring 22 from protruding into the preset gap between the wafer 100 and the carrier body 1, thereby avoiding the influence of the fixing ring 22 on the back gas introduced into the preset gap, and then further improving the temperature uniformity of the wafer 100 in the semiconductor process, and further improving the uniformity of the semiconductor process results. By enabling the support member 4 to pass through the fixing ring 22, it is possible to prevent the fixing ring 22 from interfering with the lifting of the support member 4, so that when the support member 4 lifts and lowers in the first channel 3, it can pass through the inside of the fixing ring 22.

[0038] Optionally, the material of the fixing ring 22 can be ceramic.

[0039] In an embodiment of the present invention, the radial dimension of the assembly groove can be greater than the radial dimension of the first channel 3, and the outer diameter dimension of the fixing ring 22 (such as Figure 3 shown as dimension A) can be equal to the radial dimension of the assembly groove.

[0040] In this way, on the one hand, the connection area between the bottom surface of the fixing ring 22 and the assembly groove can be increased, and on the other hand, the outer peripheral wall of the fixing ring 22 can be fitted with the inner peripheral wall of the assembly groove, so as to improve the connection stability between the fixing ring 22 and the assembly groove and the sealing performance between the fixing ring 22 and the assembly groove.

[0041] Optionally, the outer diameter dimension of the fixing ring 22 can be greater than 10 mm.

[0042] Optionally, the outer diameter dimension of the fixing ring 22 can be 13 mm.

[0043] In an embodiment of the present invention, the inner diameter dimension of the fixing ring 22 (such as Figure 3 shown as dimension B) can be greater than or equal to the radial dimension of the first channel 3, and the fixing ring 22 and the first channel 3 are coaxially arranged.

[0044] In this way, in the radial direction of the first channel 3, the inner edge of the fixing ring 22 can be located outside the inner peripheral wall of the first channel 3, so as to prevent the fixing ring 22 from interfering with the lifting of the support member 4 and enable the support member 4 to lift and lower smoothly.

[0045] Optionally, the radial dimension of the first channel 3 may be 3 mm, and the inner diameter dimension of the fixing ring 22 may be greater than or equal to 3 mm.

[0046] In an embodiment of the present invention, the edge of the sealing film 21 may be flush with the outer edge of the fixing ring 22.

[0047] In this way, the connection area between the sealing film 21 and the fixing ring 22 can be increased, thereby improving the connection stability between the sealing film 21 and the fixing ring 22 and enhancing the sealing performance between the sealing film 21 and the fixing ring 22.

[0048] In an embodiment of the present invention, the sealing film 21 may be flush with the notch end face of the assembly groove.

[0049] This can prevent the sealing film 21 from protruding into the assembly groove and entering the preset gap between the wafer 100 and the carrier body 1, thus avoiding the influence of the sealing film 21 on the back gas introduced into the preset gap. Subsequently, the temperature uniformity of the wafer 100 in the semiconductor process can be further improved, and the uniformity of the semiconductor process results can be further enhanced.

[0050] In an embodiment of the present invention, when there are multiple sealing films 21, the multiple sealing films 21 may be stacked on the fixing ring 22.

[0051] Optionally, two sealing films 21 may be stacked on the fixing ring 22. That is to say, one of the two sealing films 21 covers the fixing ring 22, and the other sealing film 21 among the two sealing films 21 covers the one sealing film 21. However, the number of the sealing films 21 stacked on the fixing ring 22 is not limited to this. For example, the number of the sealing films 21 stacked on the fixing ring 22 may be three, four or more.

[0052] Optionally, the combined thickness of the fixing ring 22 and the two sealing films 21 stacked on the fixing ring 22 (as shown by the middle thickness E) may be 4 mm. Figure 3 shown by the middle thickness E) may be 4 mm.

[0053] Optionally, the thickness of the fixing ring 22 may be 3.8 mm.

[0054] Optionally, the thickness of the sealing film 21 may be 20 μm - 200 μm.

[0055] Optionally, the thickness of the sealing film 21 may be 100 μm.

[0056] In an embodiment of the present invention, the sealing film 21 and the fixing ring 22 may be bonded.

[0057] Optionally, a top adhesive 61 may be provided on the top of the fixed ring 22, and the bottom surface of the sealing film 21 may be bonded to the top of the fixed ring 22 through the top adhesive 61.

[0058] Optionally, a receiving groove may be provided on the top of the fixed ring 22 for receiving the top adhesive 61.

[0059] Receiving the top adhesive 61 through the receiving groove can improve the stability of the top adhesive 61 to enhance the bonding stability between the sealing film 21 and the fixed ring 22.

[0060] Optionally, the radial dimension of the top adhesive 61 (such as Figure 3 shown as dimension C) may be 2 mm.

[0061] In an embodiment of the present invention, the fixed ring 22 and the assembly groove may be bonded.

[0062] Optionally, a bottom adhesive 62 may be provided on the bottom surface of the fixed ring 22, and the bottom of the fixed ring 22 may be bonded to the bottom of the assembly groove through the bottom adhesive 62.

[0063] Optionally, the radial dimension of the bottom adhesive 62 (such as Figure 3 shown as dimension D) may be equal to the difference between the outer and inner diameters of the fixed ring 22.

[0064] This can increase the area of the bottom adhesive 62 as much as possible to improve the bonding stability between the fixed ring 22 and the assembly groove as much as possible.

[0065] Optionally, the radial dimension of the bottom adhesive 62 may be 5 mm.

[0066] Optionally, the base materials of the top adhesive 61 and the bottom adhesive 62 may both be polyethylene glycol terephthalate (abbreviated as PET).

[0067] Optionally, the thicknesses of the top adhesive 61 and the bottom adhesive 62 may both be 115 μm.

[0068] Optionally, the top adhesive 61 and the bottom adhesive 62 may both be transparent.

[0069] Optionally, the light release types of the top adhesive 61 and the bottom adhesive 62 may both be silicone.

[0070] Optionally, the heavy release types of the top adhesive 61 and the bottom adhesive 62 may both be modified acrylic acid.

[0071] Optionally, the light release type of the release paper of the top binder 61 and the light release type of the release paper of the bottom binder 62 can both be polyethylene terephthalate (PET) films.

[0072] In an embodiment of the present invention, the material of the sealing film 21 can include silane. That is to say, the sealing film 21 can include a silane film. This design is because the sealing film 21 made of a metal material will generate metal atoms, causing serious contamination to the wafer 100, while the product of the silane film after plasma corrosion is a silicon compound, which will not corrode and contaminate the wafer 100.

[0073] Optionally, the material of the sealing film 21 can include siloxane. That is to say, the sealing film 21 can include a siloxane film. By adjusting the oxygen content of the siloxane film, the performance of the siloxane film can be adjusted. The higher the oxygen content of the siloxane film, the stronger the gas barrier property, but the worse the flexibility. A better gas barrier property and flexibility can be achieved simultaneously by laminating multiple siloxane films with a lower oxygen content and a poorer gas barrier property.

[0074] Optionally, the material of the sealing film 21 can include polydimethylsiloxane. That is to say, the sealing film 21 can be a polydimethylsiloxane film. The lifting acceleration of the support member 4 is small, and the polydimethylsiloxane film has excellent flexibility, can be lifted by the support member 4 without breaking, and can return to its original state when the support member 4 retracts into the first channel 3.

[0075] In an embodiment of the present invention, the range of the elongation at break can be 300%-700%.

[0076] When the support member 4 extends out of the first channel 3 and rises to the highest state, the maximum length of the support member 4 extending out of the first channel 3 is usually 10 mm. By making the range of the elongation at break be 300%-700%, a sealing film 21 with a radial dimension of 10 mm can be satisfied.

[0077] Optionally, the Shore A hardness of the sealing film 21 can be 30-55.

[0078] Optionally, the tear strength of the sealing film 21 can be 10 KN / m.

[0079] An embodiment of the present invention also provides a semiconductor process equipment, including a process chamber and a carrying device as provided in the embodiment of the present invention. The carrying device is arranged in the process chamber and is used to carry the wafer 100.

[0080] The semiconductor process equipment provided by the embodiment of the present invention uses the carrying device provided by the embodiment of the present invention to carry the wafer 100, so that on the basis of realizing the sealing of the first channel 3, the temperature uniformity of the wafer 100 in the semiconductor process can be improved, and further the uniformity of the semiconductor process result can be improved.

[0081] In summary, the carrier device and semiconductor process equipment provided by the embodiments of the present invention can improve the temperature uniformity of the wafer 100 in the semiconductor process on the basis of realizing the sealing of the first channel 3, thereby improving the uniformity of the semiconductor process results.

[0082] It can be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principle of the present invention. However, the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims

1. A carrying device, characterized in that, The invention comprises a carrying body and a plurality of sealing components, wherein the carrying body is used for carrying a wafer, the carrying body is provided with a plurality of first channels, the first channels are used for a liftable supporting component to pass through, the plurality of supporting components can rise and extend out of the first channels to support the wafer, or descend and retract into the first channels, the sealing component comprises a sealing film, the plurality of sealing films seal the plurality of first channels one by one by covering the plurality of first channels one by one, the sealing film has a preset elongation at break, and the elongation at break satisfies that the sealing film can maintain the covering and sealing of the first channels when the supporting component extends out of the first channels and rises to the highest state.

2. The carrying device according to claim 1, wherein The sealing component also includes a fixing ring, the bearing body is provided with a plurality of assembly grooves, the assembly grooves are recessed relative to the bearing body, and the plurality of assembly grooves are connected with the plurality of first channels in a one-to-one correspondence, the fixing ring is embedded in the assembly grooves, and the supporting component can pass through, the sealing film covers the side of the fixing ring away from the first channel, and is sealingly connected to the fixing ring.

3. The bearing device according to claim 2, characterized in that, The radial dimension of the assembly groove is larger than the radial dimension of the first hole, and the outer diameter of the fixing ring is equal to the radial dimension of the assembly groove.

4. The carrying device according to claim 2, characterized in that, The inner diameter of the fixing ring is greater than or equal to the radial dimension of the first hole, and the fixing ring is coaxially arranged with the first hole.

5. The carrying device according to claim 2, characterized in that, The edge of the sealing film is flush with the outer edge of the fixing ring.

6. The bearing device according to claim 2, characterized in that, The sealing film is flush with the notch end surface of the assembly groove.

7. The carrying device according to claim 2, wherein When there are a plurality of sealing films, the plurality of sealing films are stacked on the fixing ring.

8. The carrying device according to claim 2, characterized in that, The sealing film is bonded to the fixing ring, and / or the fixing ring is bonded to the assembly groove.

9. The bearing device according to claim 1, characterized in that, The material of the sealing film includes silane, and / or the elongation at break ranges from 300% to 700%.

10. A semiconductor process equipment, characterized in that, It comprises a process chamber and a carrying device as described in any one of claims 1 to 9, wherein the carrying device is arranged in the process chamber and is used for carrying wafers.

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