Crimping structure on-chip system vertical power supply and distribution structure and preparation method

Abstract

The invention relates to a vertical power supply and distribution structure of a crimping structure on-chip system and a preparation method, and belongs to the technical field of semiconductor manufacturing, the vertical power supply and distribution structure comprises a front-stage substrate, a top plate and a bottom plate which are sequentially stacked, the front-stage substrate is provided with a front-stage power supply and distribution module, the top plate is provided with a plurality of top plate power supply and distribution sub-modules connected in parallel, and the bottom plate is provided with a plurality of bottom plate power supply and distribution sub-modules connected in parallel. The bottom plate is provided with a plurality of groups of parallel bottom plate power supply and distribution sub-modules for generating multiple voltage domains, and the multiple voltage domains which are high in integration level and current density and meet the power supply and distribution requirements of different loads are obtained through step-by-step parallel extension from the front-stage power supply and distribution module to the top plate power supply and distribution sub-modules and then to the bottom plate power supply and distribution sub-modules; the front-stage bottom electrode is connected with the top plate top electrode through the first-stage electrical interconnection structure, and the top plate bottom electrode and the bottom plate top electrode are correspondingly connected through the second-stage electrical interconnection structure, so that the problem of high stress service reliability under high integration of the multi-voltage domain power supply and distribution module of the crimping structure on-chip system in the prior art is solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and particularly to a vertical power supply and distribution structure and a preparation method for a press-fit structure die-level system. Background Art

[0002] The press-fit structure die-level system is an application technology used in semiconductor device manufacturing. It mainly divides the die-level system into different voltage power supply and distribution units to form multiple voltage domains, connects the multiple voltage domain power supply and distribution units in parallel, and then realizes the electrical connection between the chip and the motor through the press-fit process, replacing the traditional lead or welding method, thereby shortening the current transmission path, increasing the device layout density, reducing the complexity of electrical connection design, improving parasitic effects, and enhancing heat dissipation. It is being increasingly applied in the field of semiconductor device manufacturing.

[0003] Due to processing technology limitations, the press-fit structure die-level system requires the overall structure to have good stress service reliability. In the prior art, such as Tesla Dojo and Cerebras wafer-level engines, the pressure-bearing capacity can reach 500N, but it basically stagnates at this level. Once the integration degree is increased, the pressure-bearing capacity becomes worse, and the problem of high stress service reliability of the multi-voltage domain power supply and distribution module under high integration cannot be solved. Summary of the Invention

[0004] In view of the above analysis, embodiments of the present invention aim to provide a vertical power supply and distribution structure and a preparation method for a press-fit structure die-level system to solve the problem of high stress service reliability of the multi-voltage domain power supply and distribution module of the existing press-fit structure die-level system under high integration.

[0005] On the one hand, embodiments of the present invention provide a vertical power supply and distribution structure for a press-fit structure die-level system. The structure includes a pre-stage substrate, a top plate, and a bottom plate that are sequentially stacked. The pre-stage substrate is provided with a pre-stage power supply and distribution module. The top plate is provided with a plurality of parallel top plate power supply and distribution sub-modules. The bottom plate is provided with multiple groups of parallel bottom plate power supply and distribution sub-modules. Each group of bottom plate power supply and distribution sub-modules includes at least one bottom plate power supply and distribution unit. Among them,

[0006] The pre-stage power supply and distribution module and the top plate power supply and distribution sub-modules are connected through a first-level electrical interconnection structure. The pre-stage power supply and distribution module steps down the input voltage and then outputs a first-level output voltage, and then outputs the first-level output voltage to all the top plate power supply and distribution sub-modules through the first-level electrical interconnection structure;

[0007] The top plate power supply and distribution sub-modules and the corresponding bottom plate power supply and distribution sub-modules are connected through a second-level electrical interconnection structure. Each top plate power supply and distribution sub-module steps down the first-level output voltage and then outputs a second-level output voltage, and then outputs the second-level output voltage to the corresponding bottom plate power supply and distribution sub-module through the second-level electrical interconnection structure;

[0008] The power supply and distribution unit in the power supply and distribution sub-module on the bottom plate is used to convert the secondary output voltage into a load output voltage, and then output the load output voltage through the corresponding external output interface.

[0009] Based on a further improvement of the above system, the pre-stage power supply and distribution module includes a pre-stage top electrode arranged on the upper surface of the pre-stage substrate, a pre-stage bottom electrode arranged on the lower surface of the pre-stage substrate, and a high-voltage power supply unit arranged above the pre-stage top electrode;

[0010] The pre-stage top electrode and the pre-stage bottom electrode are connected through metal holes arranged in the pre-stage substrate.

[0011] Based on a further improvement of the above system, the top plate power supply and distribution sub-module includes a top plate top electrode arranged on the upper surface of the top plate, a top plate bottom electrode arranged on the lower surface of the top plate, and a low-voltage power supply unit arranged above the top plate top electrode;

[0012] Corresponding metal lines are respectively arranged below the top plate top electrode and above the top plate bottom electrode. The metal line connecting the top plate top electrode and the metal line connecting the top plate bottom electrode are both connected through metal holes arranged in the top plate.

[0013] Based on a further improvement of the above system, each bottom plate power supply and distribution unit includes a bottom plate top electrode, a buried capacitor, and a bottom plate bottom electrode that are connected in sequence and arranged vertically in correspondence. Among them, the bottom plate top electrode is arranged on the upper surface of the bottom plate, the buried capacitor is arranged inside the bottom plate, and the bottom plate bottom electrode is arranged on the lower surface of the bottom plate;

[0014] The bottom plate top electrode and the bottom plate bottom electrode are connected through corresponding metal holes arranged in the bottom plate;

[0015] The bottom plate bottom electrode is correspondingly connected to the external output interface below.

[0016] Based on a further improvement of the above system, the buried capacitor has at least one layer; the single-layer buried capacitor is uniformly arranged in a core board with a thickness not exceeding 0.5 mm.

[0017] Based on a further improvement of the above system, the input voltage range is [40V, 60V], the primary output voltage range is [4V, 6V], and the secondary output voltage range is [0.5V, 3.3V].

[0018] Based on further improvements to the above system, both the primary electrical interconnection structure and the secondary electrical interconnection structure include a plurality of uniformly distributed and vertically arranged connection units. Among them, the number of connection units in the primary electrical interconnection structure is the same as the number of power supply and distribution sub-modules on the top plate, and the number of connection units in the secondary electrical interconnection structure is the same as the number of power supply and distribution units on the bottom plate; one end of each connection unit in the primary electrical interconnection structure is connected to the bottom electrode of the previous stage, and the other end is connected to the top electrode of the top plate; one end of each connection unit in the secondary electrical interconnection structure is connected to the bottom electrode of the top plate, and the other end is connected to the top electrode of the bottom plate.

[0019] Based on further improvements to the above system, a heat dissipation and voltage equalization structure is provided on the top of all power supply and distribution sub-modules on the top plate; an insulating and heat-conducting layer is provided at the bottom of the heat dissipation and voltage equalization structure, and a metal coating is provided at the top; the insulating and heat-conducting layer of the heat dissipation and voltage equalization structure is connected to the bottom of the low-voltage power supply unit, and the bottom of the heat dissipation and voltage equalization structure is also mechanically connected to the top of the top plate.

[0020] Based on further improvements to the above system, the thickness of the previous stage substrate ≥ 2.5 mm; the thickness of the top plate ≥ 1 mm; the thickness of the bottom plate ≥ 1.6 mm; the length of the primary electrical interconnection structure ≤ 10 cm; the length of the secondary electrical interconnection structure ≤ 5 mm.

[0021] On the other hand, an embodiment of the present invention provides a method for preparing a vertical power supply and distribution structure of a wafer-level system with a crimping structure, and the method specifically includes:

[0022] S1: Prepare the previous stage substrate and the previous stage power supply and distribution module;

[0023] S2: Prepare the top plate and the power supply and distribution sub-module on the top plate;

[0024] S3: Prepare the bottom plate and the power supply and distribution unit on the bottom plate;

[0025] S4: Apply crimping to connect all the power supply and distribution sub-modules on the top plate and the corresponding power supply and distribution units on the bottom plate through the secondary electrical interconnection structure, and set a heat dissipation and voltage equalization structure on the power supply and distribution sub-modules on the top plate;

[0026] S5: Apply crimping to connect the previous stage power supply and distribution module and the corresponding power supply and distribution sub-module on the top plate through the primary electrical interconnection structure.

[0027] Compared with the prior art, the present invention can achieve at least one of the following beneficial effects:

[0028] 1. A vertical power supply and distribution structure for a wafer-level system with a press-fit structure composed of a pre-stage substrate, a top plate, and a bottom plate stacked in sequence. The pre-stage substrate is provided with a pre-stage power supply and distribution module. The top plate is provided with multiple parallel top plate power supply and distribution sub-modules. The bottom plate is provided with multiple groups of parallel bottom plate power supply and distribution sub-modules. The pre-stage power supply and distribution module and the top plate power supply and distribution sub-modules are connected through a first-level electrical interconnection structure, and the top plate power supply and distribution sub-modules and the bottom plate power supply and distribution sub-modules are connected through a second-level electrical interconnection structure to form a vertical power supply and distribution structure. Moreover, the pre-stage power supply and distribution modules of each vertical power supply and distribution unit are all arranged on the same pre-stage substrate, the top plate power supply and distribution sub-modules are all arranged on the same top plate substrate, and the bottom plate power supply and distribution sub-modules are all arranged on the same bottom plate substrate. The thickness of the pre-stage substrate is ≥2.5 mm, the thickness of the top plate substrate is ≥1 mm, and the thickness of the bottom plate substrate is ≥1.6 mm. The distance between the pre-stage substrate and the top plate substrate does not exceed 10 cm, and the distance between the top plate substrate and the bottom plate substrate does not exceed 5 mm, which strengthens the overall rigidity of the vertical power supply and distribution structure. A heat dissipation and voltage equalization structure is arranged on the top plate power supply and distribution sub-modules, further improving the overall structural stability and heat dissipation effect. Combining with the manufacturing process, it achieves the reliability of serving under high stress (exceeding 10,000 N), and the structural stability far exceeds the prior art.

[0029] 2. The input voltage range of the pre-stage substrate is [40, 60], and the output voltage range is [4V, 6V], enabling the top plate power supply and distribution sub-modules to adopt low-voltage power supply units with smaller sizes, and more units can be deployed on the same surface area, thereby improving the integration degree. The bottom plate substrate is composed of at least one single-layer buried capacitor core plate. The capacitors in the single-layer buried capacitor core plate are uniformly arranged in a core plate with a thickness not exceeding 0.5 mm. The power distribution network formed by the buried capacitors has a higher integration degree, which not only supports a single-layer core plate but also supports multiple single-layer core plates laminated to obtain a multi-layer buried capacitor. Compared with the prior art, while achieving structural stability and high-stress service reliability, it can also meet the power supply requirements of multiple voltage domains and realize high current density applications.

[0030] 3. The press-fit process shortens the metal line path, reduces the distances of the first-level electrical interconnection structure, the second-level electrical interconnection structure, and the interlayer connection, further reducing the parasitic effect, which is beneficial to achieving a higher integration degree and obtaining a better heat dissipation effect.

[0031] In the present invention, the above technical solutions can also be combined with each other to achieve more preferred combination solutions. Other features and advantages of the present invention will be described in the subsequent specification, and some advantages can be made obvious from the specification or understood by implementing the present invention. The objectives and other advantages of the present invention can be realized and obtained through the content specifically pointed out in the specification and the drawings. Description of the Drawings

[0032] The accompanying drawings are only for the purpose of showing specific embodiments and are not considered to be a limitation of the present invention. Throughout the drawings, the same reference signs denote the same components;

[0033] Figure 1 This is a schematic diagram of the principle of the vertical power supply and distribution structure of Embodiment 1 of the present invention.

[0034] Figure 2 This is a schematic cross-sectional view of the vertical power supply and distribution structure of Embodiment 1 of the present invention.

[0035] Figure 3 This is a flow chart of preparing the pre-stage substrate and the pre-stage power supply and distribution module in Embodiment 2 of the present invention.

[0036] Figure 4 This is a flow chart of preparing the top plate and the top plate power supply and distribution sub-module in Embodiment 2 of the present invention.

[0037] Figure 5 This is a flow chart of preparing the bottom plate and the bottom plate power supply and distribution unit in Embodiment 2 of the present invention.

[0038] Figure 6 This is a flow chart of the assembly process in Embodiment 2 of the present invention.

[0039] Reference signs:

[0040] 001 - High-voltage power supply unit; 002 - Passive device; 003 - Pre-stage substrate; 004 - First-level electrical interconnection structure; 005 - Low-voltage power supply unit; 006 - Top plate; 007 - Second-level electrical interconnection structure; 008 - Bottom plate; 009 - Pre-stage top electrode; 010 - Pre-stage bottom electrode; 011 - Top plate top electrode; 012 - Top plate bottom electrode; 013 - Bottom plate top electrode; 014 - Bottom plate bottom electrode; 015 - External output port; 016 - Heat dissipation and voltage equalization structure; 017 - Metal hole; 018 - Embedded capacitor; 019 - Single-layer core board; 020 - Single-layer embedded capacitor core board; 021 - Multi-layer embedded capacitor substrate obtained by laminating multiple single-layer embedded capacitor core boards. Specific embodiments

[0041] The following will specifically describe the preferred embodiments of the present invention in conjunction with the accompanying drawings, where the accompanying drawings form a part of this application and are used together with the embodiments of the present invention to explain the principle of the present invention, rather than to limit the scope of the present invention.

[0042] A specific embodiment of the present invention discloses a vertical power supply and distribution structure for a wafer-level system with a press-fit structure, as Figure 1 shown.

[0043] The structure includes a pre-stage substrate, a top plate, and a bottom plate that are stacked in sequence. The pre-stage substrate is provided with a pre-stage power supply and distribution module. The top plate is provided with multiple parallel-connected top plate power supply and distribution sub-modules. The bottom plate is provided with multiple groups of parallel-connected bottom plate power supply and distribution sub-modules. Each group of bottom plate power supply and distribution sub-modules includes at least one bottom plate power supply and distribution unit. Among them,

[0044] The pre-stage power supply and distribution module and the top plate power supply and distribution sub-modules are connected through a first-level electrical interconnection structure. The pre-stage power supply and distribution module steps down the input voltage and outputs a first-level output voltage, and then outputs the first-level output voltage to all the top plate power supply and distribution sub-modules through the first-level electrical interconnection structure;

[0045] The top plate power supply and distribution sub-modules and the corresponding bottom plate power supply and distribution sub-modules are connected through a second-level electrical interconnection structure. Each top plate power supply and distribution sub-module steps down the first-level output voltage and outputs a second-level output voltage, and then outputs the second-level output voltage to the corresponding bottom plate power supply and distribution sub-module through the second-level electrical interconnection structure;

[0046] The power supply and distribution unit in the bottom plate power supply and distribution sub-module is used to convert the second-level output voltage into a load output voltage, and then output the load output voltage through the corresponding external output interface.

[0047] Principally, the power supply and distribution structure of the system-on-chip usually adopts an intermediate bus architecture composed of a pre-stage power supply and distribution structure and a post-stage power supply and distribution structure that can achieve multi-level voltage conversion. Among them, the pre-stage power supply and distribution structure uses a transformer with a fixed turns ratio to convert a higher input bus voltage into a lower intermediate bus voltage and output it to the post-stage power supply and distribution structure; the post-stage power supply and distribution structure usually first adopts synchronous buck conversion to obtain a lower voltage output, and then converts the voltage into multiple final output voltages required by the load through a voltage stabilization control circuit composed of PDN (Power Distribution Network) capacitors; the voltage output by the pre-stage power supply and distribution structure can provide input voltage for multiple parallel-connected power supply and distribution sub-structures in the post-stage power supply and distribution structure at the same time. After the parallel-connected power supply and distribution sub-structures in the post-stage power supply and distribution structure are synchronously stepped down, they can also provide input voltage for the voltage stabilization control circuits composed of multiple groups of parallel-connected PDN capacitors respectively, so as to step down layer by layer while gradually increasing the power distribution density to form multi-voltage domain synchronous power supply.

[0048] Specifically, the vertical power supply and distribution structure of the crimped structure system-on-chip disclosed in this embodiment is a structural improvement based on the intermediate bus architecture of the existing system-on-chip power supply and distribution structure, including a pre-stage substrate (003), a top plate (006), and a bottom plate (008) that are stacked in sequence.

[0049] Optionally, the pre-stage substrate (003), the top plate (006), and the bottom plate (008) are all core substrates or non-core substrates.

[0050] The pre-stage substrate (003) is provided with a pre-stage power supply and distribution module.

[0051] Further, as Figure 2 shown, the pre-stage power supply and distribution module includes a pre-stage top electrode (009) disposed on the upper surface of the pre-stage substrate (003), a pre-stage bottom electrode (010) disposed on the lower surface of the pre-stage substrate (003), and a high-voltage power supply unit (001) disposed above the pre-stage top electrode (009);

[0052] The pre-stage top electrode (009) and the pre-stage bottom electrode (010) are connected through a metal hole (017) disposed within the pre-stage substrate (003).

[0053] In order to achieve single-stage synchronous buck, for the high-voltage power supply unit (001) of the pre-stage power supply and distribution module, the input voltage of the common pre-stage power supply and distribution module varies from 12V to 70V. When the input voltage is lower, the power conversion efficiency is not high, which not only easily causes high losses but also degrades the overall integration.

[0054] The high-voltage power supply unit (001) adopted by the pre-stage power supply and distribution module of this embodiment has an input voltage range of [40, 60], preferably an input voltage of 50V, a primary output voltage range of [4, 6], preferably a primary output voltage of 5V, and a maximum power consumption of more than 10W, facilitating a higher-integration power supply and distribution structure for the subsequent-stage power supply and distribution module.

[0055] The circuit topology structure of the pre-stage power supply and distribution module further includes metal lines connecting the pre-stage top electrode (009) and the pre-stage bottom electrode (010), and passive devices for realizing other electrical functions. Based on the purpose of establishing a vertical electrical structure, minimizing the circuit wiring as much as possible, improving the power transmission and conversion efficiency, and reducing losses, the pre-stage top electrode (009) of the pre-stage power supply and distribution module is disposed on the upper surface of the pre-stage substrate (003), the pre-stage bottom electrode (010) is disposed on the lower surface of the pre-stage substrate (003), the pre-stage top electrode (009) and the pre-stage bottom electrode (010) are connected through a metal hole (017) disposed within the pre-stage substrate (003), the circuit topology is realized by metal lines in blind buried holes within the pre-stage substrate (003), forming a circuit topology structure arranged from top to bottom and vertically corresponding and connected, and electrical passive devices with other functions are disposed around the high-voltage power supply unit (001) on the pre-stage top electrode (009) or the pre-stage bottom electrode (010), shortening the distance from the high-voltage power supply unit (001) as much as possible on the premise of avoiding mutual interference, so as to reduce the power transmission loss.

[0056] Based on realizing the electrical topology structure of the pre-stage power supply and distribution module and meeting the structural rigidity requirements, the thickness of the pre-stage substrate (003) is preferably ≥2.5 mm.

[0057] The top plate (006) is provided with a plurality of parallel-connected top plate power supply and distribution sub-modules.

[0058] All the top plate power supply and distribution sub-modules are connected in parallel, and the primary output voltage output by the pre-stage power supply and distribution module is used as the unified input voltage. Therefore, there is a one-to-many connection relationship between the pre-stage power supply and distribution module and the top plate electronic module.

[0059] Preferably, the thickness of the top plate (006) is ≥1 mm. While meeting the requirements of structural stability and the electrical topology and components of the top plate power supply and distribution sub-module, the plate thickness is reduced as much as possible to enhance heat dissipation.

[0060] Further, the top plate power supply and distribution sub-module includes a top plate top electrode (011) provided on the upper surface of the top plate (006), a top plate bottom electrode (012) provided on the lower surface of the top plate (006), and a low-voltage power supply unit (005) provided above the top plate top electrode;

[0061] Corresponding metal lines are respectively provided below the top plate top electrode (011) and above the top plate bottom electrode (012). The metal line connecting the top plate top electrode (011) and the metal line connecting the top plate bottom electrode (012) are connected through metal holes provided in the top plate (006).

[0062] Specifically, the primary output voltage output by the pre-stage power supply and distribution module is input to the top plate power supply and distribution sub-module.

[0063] Based on the application requirements of multi-voltage domain loads, a plurality of parallel-connected top plate power supply and distribution sub-modules are provided on the top plate (006). Each top plate power supply and distribution sub-module uses the primary output voltage as the input voltage, and after synchronous buck conversion, the same secondary output voltage is respectively output. Each output secondary output voltage is respectively used as one of the input voltages for multiple subsequent voltage domains. Therefore, each top plate power supply and distribution sub-module includes a low-voltage power supply unit (005). The secondary output voltage range output by the low-voltage power supply unit (005) is [0.5V, 3.3V]. In this embodiment, the secondary output voltage <1V, and the maximum power consumption is about 5W.

[0064] All the top plate power supply and distribution sub-modules are evenly arranged on the top plate (006). Each top plate power supply and distribution sub-module further includes a metal circuit connecting the top electrode (011) and the bottom electrode (012) of the top plate, as well as passive devices for realizing other electrical functions. Also for the purpose of establishing a vertical electrical structure, minimizing the circuit wiring as much as possible to reduce the power transmission loss and improve the power transmission and conversion efficiency, the top electrode (011) of each top plate power supply and distribution sub-module is arranged on the upper surface of the top plate (006), and the bottom electrode (012) of the top plate is arranged on the lower surface of the top plate (006). The circuit topology is realized by the metal circuits layered in the blind buried holes in the top plate (006). The metal circuits are Figure 2 marked as gray in and connected to the top electrode (011) or the bottom electrode (012) of the top plate. The metal circuit connecting the top electrode (011) of the top plate and the metal circuit connecting the bottom electrode (012) of the top plate are respectively connected through corresponding metal holes, thereby respectively forming an electrical connection structure arranged vertically and connected vertically in sequence from top to bottom. All other functional passive devices (002) in each top plate power supply and distribution sub-module surround their respective low-voltage power supply units (005) and are respectively arranged on the corresponding top electrode (011) or bottom electrode (012) of the top plate. Among them, the edge gap between the bottom electrodes (012) of the top plate power supply and distribution sub-modules on the top plate is ≥0.4 mm.

[0065] Furthermore, a heat dissipation and voltage equalization structure (016) is arranged on the top of the top plate power supply and distribution sub-module; an insulating and heat-conducting layer is arranged at the bottom of the heat dissipation and voltage equalization structure (016), and a metal coating is arranged at the top; the insulating and heat-conducting layer of the heat dissipation and voltage equalization structure (016) is connected to the top of the low-voltage power supply unit (005), and the bottom of the heat dissipation and voltage equalization structure (016) is also mechanically connected to the top of the top plate (006).

[0066] For the multiple parallel-connected top plate power supply and distribution sub-modules arranged on the top plate, due to the denser circuit structure, larger number of low-voltage power supply units, and more heat generated, there are higher requirements for heat dissipation. Therefore, an integrated heat dissipation and voltage equalization structure (016) is arranged on the top of the low-voltage power supply unit (005) of each top plate power supply and distribution sub-module on the top plate.

[0067] The heat dissipation and voltage equalization structure (016) is preferably a copper metal plate with a thickness ≥10 mm.

[0068] An insulating and heat-conducting layer is provided on the lower surface of the heat dissipation and voltage equalizing structure (016). The top of each low-voltage power supply unit (005) of the top plate power distribution sub-module is connected to the insulating and heat-conducting layer on the lower surface of the heat dissipation and voltage equalizing structure (016), facilitating the heat conduction of the low-voltage power supply unit (005) to the heat dissipation and voltage equalizing structure (016). A metal coating is also used on the upper surface of the heat dissipation and voltage equalizing structure (016), which is not only more conducive to heat dissipation but also can prevent the problem of increased thermal resistance caused by the oxidation of the copper metal plate. The bottom of the heat dissipation and voltage equalizing structure (016) is also mechanically connected to the top of the top plate (006). Preferably, the mechanical connection is a bolt connection. A plurality of fixing points are provided on the heat dissipation and voltage equalizing structure (016), and corresponding fixing points are provided on the top of the top plate (006). The fixing points provided on the heat dissipation and voltage equalizing structure (016) and the corresponding fixing points provided on the top of the top plate (006) are respectively connected and fixed by bolts, thereby further enhancing the structural stability.

[0069] The pre-stage power distribution module and the top plate power distribution sub-module are connected through a primary electrical interconnection structure (004). The pre-stage power distribution module steps down the input voltage and outputs a primary output voltage, and then outputs the primary output voltage to the top plate power distribution sub-module through the primary electrical interconnection structure (004).

[0070] Specifically, the primary electrical interconnection structure (004) is used to connect the pre-stage power distribution module and the top plate power distribution sub-module, and output the primary output voltage output by the pre-stage power distribution module to the top plate power distribution sub-module; it is also used to provide structural support, so that the pre-stage substrate (003) and the top plate (006) form a stable structure.

[0071] Furthermore, the primary electrical interconnection structure (004) includes a plurality of connection units that are evenly distributed and vertically arranged. The number of connection units of the primary electrical interconnection structure (004) is the same as the number of top plate power distribution sub-modules. One end of each connection unit of the primary electrical interconnection structure (004) is connected to the bottom of the corresponding pre-stage bottom electrode (010), and the other end is connected to the top of the corresponding top plate top electrode (011).

[0072] Optionally, the connection unit is a spring pin, a metal post, or a substrate.

[0073] Preferably, the connection unit (004) uses a spring pin. One end of the spring pin is connected to the bottom of the pre-stage bottom electrode (010) by crimping, and the other end is connected to the top of the top plate top electrode (011). Both the pre-stage bottom electrode (010) and the top plate top electrode (011) use electroplated hard gold to enhance the reliability when coping with high stress after connecting the spring pin.

[0074] In a specific embodiment, the bottom electrodes of the pre-stage are evenly arranged on both sides or around the bottom of the pre-stage substrate, and the top electrodes of the top plate are respectively arranged on both sides or around the top of the top plate and are vertically corresponding to the positions of the bottom electrodes of the pre-stage. Each spring pin is vertically connected to the corresponding bottom electrode of the pre-stage and the top electrode of the top plate, so that the spring pins uniformly support the pre-stage substrate and the top plate from both sides.

[0075] In a specific embodiment, the bottom electrodes of the pre-stage are evenly arranged around the bottom of the pre-stage substrate, and the top electrodes of the top plate are respectively arranged around the top of the top plate and are vertically corresponding to the positions of the bottom electrodes of the pre-stage. Each spring pin is vertically connected to the corresponding bottom electrode of the pre-stage and the top electrode of the top plate, so that the spring pins uniformly support the pre-stage substrate and the top plate from all around.

[0076] Preferably, the thickness of the hard gold ≥ 0.76um.

[0077] In a specific embodiment, the first-level electrical interconnection structure (004) can be two rows of vertically arranged and evenly arranged spring pins. The bottom electrodes (010) of the pre-stage are arranged on both sides of the bottom of the pre-stage substrate (003), and the top electrodes (011) of the top plate are correspondingly arranged on both sides of the top of the top plate (006). The bottom electrodes (010) of the pre-stage, the first-level electrical interconnection structure (004), and the top electrodes (011) of the top plate are connected into a whole by crimping.

[0078] Furthermore, the length of the first-level electrical interconnection structure (004) ≤ 10cm.

[0079] The length of the first-level electrical interconnection structure (004) reflects the longest distance between the bottom of the pre-stage substrate (003) and the top of the top plate (006). Enough space needs to be left at the bottom of the pre-stage substrate (003) and the top of the top plate (006) to facilitate the setting of the heat dissipation and pressure equalization structure (016) on the top of the top plate (006), and to dissipate heat for the low-voltage power supply unit (005) in each top plate power supply and distribution sub-module arranged on the top plate (006).

[0080] The bottom plate (008) is provided with multiple groups of parallel bottom plate power supply and distribution sub-modules, and each group of bottom plate power supply and distribution sub-modules includes at least one bottom plate power supply and distribution unit.

[0081] Furthermore, each bottom plate power supply and distribution unit includes a bottom plate top electrode (013), a buried capacitor (018), and a bottom plate bottom electrode (014) that are sequentially connected and vertically corresponding. Among them, the bottom plate top electrode (013) is arranged on the upper surface of the bottom plate (008), the buried capacitor (018) is arranged inside the bottom plate (008), and the bottom plate bottom electrode (014) is arranged on the lower surface of the bottom plate;

[0082] The top electrode (013) and the bottom electrode (014) of the base plate are connected through corresponding metal holes provided in the base plate (008).

[0083] The bottom electrode (014) of the base plate is correspondingly connected to the external output interface (015) below.

[0084] Multiple groups of parallel base plate power supply and distribution sub-modules provided on the base plate (008) are used to respectively provide the required output voltage for different loads, constituting multiple voltage domains. Among them, each voltage domain is a separate power supply and distribution structure. Specifically, the required output voltage of the load is output through the respectively provided PDN capacitors. Classifying and paralleling the base plate power supply and distribution sub-modules with the same output is beneficial to obtaining a better layout structure of the base plate power supply and distribution sub-modules, thereby improving the power transmission efficiency and reducing losses.

[0085] The secondary output voltage of a top plate power supply and distribution sub-module is correspondingly output to a group of parallel base plate power supply and distribution sub-modules, and based on the respective independent power supply and distribution topological structures of each base plate power supply and distribution sub-module, the output powers the corresponding load.

[0086] Specifically, all the base plate power supply and distribution sub-modules are evenly arranged on the base plate (008). Each base plate power supply and distribution sub-module includes a top electrode (013) of the base plate provided on the upper surface of the base plate (008), a buried capacitor (018) provided in the base plate (008), and a bottom electrode (014) of the base plate provided on the lower surface of the base plate (008); the top electrode (013), the buried capacitor (018), and the bottom electrode (014) of each base plate power supply and distribution sub-module are vertically corresponding. The top electrode (013) and the bottom electrode (014) of the base plate are connected through metal holes (017) provided in the base plate (008).

[0087] Each base plate power supply and distribution sub-module further includes metal lines connecting the top electrode (013) and the bottom electrode (014) of the base plate, and passive devices for realizing other electrical functions. The passive devices are arranged as close as possible to the vertical position of the buried capacitor (018) of the same base plate power supply and distribution sub-module on the corresponding top electrode (013) of the base plate, so as to realize a vertical electrical interconnection structure, minimize the circuit wiring as much as possible, reduce the power transmission loss, and improve the power transmission and conversion efficiency. The circuit topology is respectively realized by the metal lines provided in the blind buried holes in the base plate (008), thereby respectively forming a metal line structure arranged in sequence from top to bottom and vertically corresponding and connected.

[0088] Based on different load power supply requirements, each base plate power supply and distribution sub-module is respectively provided with different numbers of buried capacitors.

[0089] Further, the embedded capacitor (018) has at least one layer; the single-layer embedded capacitor (018) is uniformly arranged in a core board with a thickness not exceeding 0.5 mm. In each single-layer embedded capacitor core board, metal lines corresponding to connecting each embedded capacitor (018) and metal vias (017) for realizing interlayer metal line connection are respectively arranged through blind vias.

[0090] Based on different load power supply requirements, the embedded capacitor (018) can also have multiple layers. Specifically, a multi-layer embedded capacitor structure is formed by correspondingly laminating multiple single-layer embedded capacitors, and a complete PDN capacitor power supply network is formed by the metal lines in the core board and the interlayer connection metal vias for the multi-layer embedded capacitor.

[0091] Further, the thickness of the bottom board (008) is ≥ 1.6 mm.

[0092] Each bottom board power supply and distribution sub-module arranged on the bottom board (008) is respectively connected to an external output interface (015) for providing power distribution for the corresponding load.

[0093] Specifically, each bottom board power supply and distribution sub-module is provided with a corresponding bottom board bottom electrode (014) on the lower surface of the bottom board (008), and the bottom of the bottom board bottom electrode (014) is connected to the corresponding external output interface (015).

[0094] The top board power supply and distribution sub-module and the bottom board power supply and distribution sub-module are connected through a secondary electrical interconnection structure (007). Each top board power supply and distribution sub-module steps down the first-stage output voltage to output a second-stage output voltage, and then outputs the second-stage output voltage to the corresponding bottom board power supply and distribution module through the secondary electrical interconnection structure (007).

[0095] Specifically, each bottom board power supply and distribution sub-module includes at least one power supply and distribution unit; the output voltages of the power supply and distribution voltages in the same bottom board power supply and distribution sub-module are the same;

[0096] Specifically, the secondary electrical interconnection structure (007) is used to connect the top board power supply and distribution sub-module and the corresponding bottom board power supply and distribution sub-module, and output the second-stage output voltage output by the top board power supply and distribution sub-module to the corresponding bottom board power supply and distribution sub-module; it is also used to provide structural support so that the top board (006) and the bottom board (008) form a stable structure.

[0097] Further, the secondary electrical interconnection structure (007) all includes a plurality of connection units that are uniformly distributed and vertically arranged. The number of connection units of the secondary electrical interconnection structure (007) is the same as the number of bottom board power supply and distribution units; one end of each connection unit of the secondary electrical interconnection structure (007) is connected to the bottom of the corresponding top board bottom electrode (012), and the other end is connected to the top of the corresponding bottom board top electrode (013).

[0098] It can be understood that each top - plate power supply and distribution sub - module is connected to a corresponding set of bottom - plate power supply and distribution sub - modules on the bottom plate, that is, each top - plate power supply and distribution sub - module is connected to all the power supply and distribution units in the corresponding set of bottom - plate power supply and distribution sub - modules on the bottom plate; therefore, the number of connection units of the secondary electrical interconnection structure is the same as the number of power supply and distribution units on the bottom plate.

[0099] Optionally, the secondary electrical interconnection structure can be a spring pin, a metal post, or a substrate.

[0100] Preferably, the secondary electrical interconnection structure (007) uses a spring pin.

[0101] The bottom - plate power supply and distribution units have a higher distribution density compared to the top - plate power supply and distribution modules, and a large number of PDN capacitors are provided in the bottom plate, making it unsuitable for press - fitting.

[0102] In a specific embodiment, one end of the spring pin is first welded to the top of the bottom - plate top electrode (013), and then the other end of the spring pin is press - fitted to the bottom of the top - plate bottom electrode (012).

[0103] Furthermore, the length of the secondary electrical interconnection structure (007) ≤ 5 mm.

[0104] Each bottom - plate power supply and distribution sub - module on the same voltage domain outputs the same output load voltage. Therefore, they are classified into the same group and set in the same area of the bottom plate (008). Based on the electrical characteristics of generating multiple voltage domains by the bottom - plate power supply and distribution sub - modules on the bottom plate (008), there is no need to set passive devices with a large thickness on the upper surface of the bottom plate (008), nor to focus on heat dissipation. Therefore, the distance between the top plate (006) and the bottom plate (008) can be further shortened, which can not only reduce the power transmission loss generated by the secondary electrical interconnection structure (007), but also further improve the structural rigidity.

[0105] Based on the uniform distribution structure of the bottom - plate power supply and distribution units on the bottom plate (008), each bottom - plate top electrode (013) of the bottom - plate power supply and distribution unit is connected to the corresponding top - plate bottom electrode (012) through the secondary electrical interconnection structure (007), thus obtaining an array of secondary electrical interconnection structures (007) with a large number, uniformly arranged, and vertically set, forming a structural support for the top plate (006) and the bottom plate (008), and enhancing the stability performance under high - stress service.

[0106] Optionally, in this embodiment, the high - voltage power supply unit (001) and the low - voltage power supply unit (005) can be voltage - conversion devices composed of circuit combinations such as LLC (resonant converter), BUCK (step - down converter), BUCK - BOOST (buck - boost converter), LDO (low - dropout linear regulator), etc. that can achieve voltage - conversion functions.

[0107] Preferably, in this embodiment, the top electrode (009) of the front stage, the bottom electrode (010) of the front stage, the top electrode (011) of the top plate, the bottom electrode (012) of the top plate, the top electrode (013) of the bottom plate, and the bottom electrode (014) of the bottom plate are all copper metals with a mounted layer thickness exceeding 35 μm.

[0108] Preferably, in this embodiment, the mechanical through-hole aperture of the metal hole (017) is ≤ 0.2 mm.

[0109] Optionally, in this embodiment, the passive device (002) is a resistor, a capacitor, or a magnetic bead.

[0110] A vertical power supply and distribution structure of a wafer-level system with a crimping structure disclosed in this embodiment includes a front-stage substrate, a top plate, and a bottom plate stacked in sequence. The front-stage substrate is provided with a front-stage power supply and distribution module. The top plate is provided with a plurality of parallel top-plate power supply and distribution sub-modules. The bottom plate is provided with multiple groups of parallel bottom-plate power supply and distribution sub-modules that generate multiple voltage domains. Among them, the front-stage power supply and distribution module steps down the input voltage in the range of [40V, 60V] and outputs a first-stage output voltage in the range of [4V, 6V], improving the power conversion efficiency and reducing losses. The top-plate power supply and distribution sub-module then synchronously steps down based on the first-stage output voltage and outputs a second-stage output voltage in the range of [0.5V, 3.3V]. Not only is the power loss reduced by increasing the input voltage, but also a multi-voltage domain with high integration, high current density, and meeting the power supply and distribution requirements of different loads is obtained through the step-by-step parallel expansion from the front-stage power supply and distribution module to the top-plate power supply and distribution sub-module and then to the bottom-plate power supply and distribution sub-module; the front-stage power supply and distribution module, the top-plate power supply and distribution sub-module, and the bottom-plate power supply and distribution sub-module all adopt a vertical electrical structure, not only shortening the metal line path as much as possible, reducing the power transmission path loss, and further improving the integration; a heat dissipation and voltage equalization structure is also provided on the top of the top-plate power supply and distribution sub-module, further improving heat dissipation and enhancing the structural stability; the bottom electrode of the front stage is connected to the top electrode of the top plate through a first-level electrical interconnection structure, and the front-stage substrate and the top plate are connected as a whole by crimping, not only meeting the heat dissipation requirements but also improving the structural stability; the bottom electrode of the top plate and the top electrode of the bottom plate are correspondingly connected through a second-level electrical interconnection structure, further improving the structural stability and the high-stress service stability of the overall structure. Compared with the prior art, the vertical power supply and distribution structure of the wafer-level system with a crimping structure disclosed in this embodiment can not only achieve higher integration and obtain a multi-voltage domain that meets the requirements of various loads, but also significantly improve the high reliability of high-stress service and can cope with high stresses above 10,000 N.

[0111] Another specific embodiment of the present invention discloses a method for preparing a vertical power supply and distribution structure of a wafer-level system with a crimping structure, and the method specifically includes:

[0112] S1: Prepare the front-stage substrate and the front-stage power supply and distribution module, specifically including:

[0113] S2: Prepare the top plate and the top plate power supply and distribution electronic module, specifically including:

[0114] S3: Prepare the bottom plate and the bottom plate power supply and distribution electronic module, specifically including:

[0115] S4: Apply crimping to connect all the top plate power supply and distribution electronic modules and the corresponding bottom plate power supply and distribution units through a secondary electrical interconnection structure, and set a heat dissipation and voltage equalization structure on the top plate power supply and distribution electronic module;

[0116] S5: Apply crimping to connect the pre-stage power supply and distribution module and the corresponding top plate power supply and distribution electronic module through a primary electrical interconnection structure.

[0117] The detailed implementation process of the preparation method of the above-mentioned crimping structure wafer-level system vertical power supply and distribution structure includes the preparation of the pre-stage substrate and the pre-stage power supply and distribution module, the preparation of the top plate and the top plate power supply and distribution electronic module, the preparation of the bottom plate and the bottom plate power supply and distribution electronic module, and the assembly. Among them, the preparation of the pre-stage substrate and the pre-stage power supply and distribution module, the preparation of the top plate and the top plate power supply and distribution electronic module, and the preparation of the bottom plate and the bottom plate power supply and distribution electronic module can be executed in parallel, and the assembly is executed at the end. The specific process includes:

[0118] Prepare the pre-stage substrate and the pre-stage power supply and distribution module, as Figure 3 shown, specifically including the following steps:

[0119] S11: Press multiple core boards together to obtain the pre-stage substrate (003);

[0120] S12: Generate metal holes on the pre-stage substrate (003), and set the pre-stage top electrode (009) and the pre-stage bottom electrode (010);

[0121] S13: Set the high-voltage power supply unit (001) and the passive device (002).

[0122] Specifically, first press multiple chips together to obtain the pre-stage substrate (003), Figure 3 In the figure, the pre-stage substrate (003) formed by pressing 2 core boards together is only for illustration. During implementation, the number of core boards can be selected according to actual needs to press and obtain the pre-stage substrate (003);

[0123] Next, perform mechanical drilling on the upper and lower surfaces of the pre-stage substrate (003) to obtain through holes, then electroplate the inner walls of the through holes with metal to obtain metal holes, then plug the metal holes with solder mask material, and then, mount the pre-stage top electrode (009) on the upper surface of the pre-stage substrate (003) and mount the pre-stage bottom electrode (010) on the lower surface;

[0124] After that, mount the high-voltage power supply unit (001) and the passive device (002) on the top electrode (009) of the front stage, then the preparation of the front-stage substrate and the front-stage power supply and distribution module is completed, where Figure 3 The mounting of the passive device (002) shown in Figure 3 on the top electrode (009) of the front stage is only for illustration. During implementation, according to actual design requirements, the passive device (002) can also be mounted on the bottom electrode (010) of the front stage.

[0125] Prepare the top plate and the top plate power supply and distribution sub-module, as Figure 4 shown, specifically including the following steps:

[0126] S21: Use a new core board as the top plate. On the top plate, respectively demarcate the distribution areas of each top plate power supply and distribution sub-module, and after generating metal holes for each top plate power supply and distribution sub-module area, layer by layer generate insulating layers on the upper and lower surfaces of the top plate. For each generated insulating layer, generate a metal wiring layer and metal holes connecting the metal wiring layers in the insulating layer until the preparation of the corresponding circuit structure is completed;

[0127] S22: Set the top electrode of the top plate and the bottom electrode of the top plate;

[0128] S23: Set the low-voltage power supply unit, the passive device, and the secondary electrical interconnection structure;

[0129] Specifically, first use a new core board as the top plate (006). Based on the connection relationship between the front-stage power supply and distribution module and multiple parallel top plate power supply and distribution sub-modules, first demarcate the distribution areas of each top plate power supply and distribution sub-module on the top plate (006), then perform mechanical drilling on each top plate power supply and distribution sub-module area to generate through holes, and then electroplate the hole walls of the through holes with metal to obtain metal holes (017); then, based on the circuit topology of each top plate power supply and distribution sub-module, layer by layer press insulating materials on the upper and lower surfaces of the top plate (006) to generate insulating layers, and then after laser drilling the newly generated insulating layers, metallize the hole walls, and then etch metal lines on the surface of the metallized hole walls. Repeat the process steps of pressing insulating layers, drilling and then metallizing, and etching metal lines until the preparation of the circuit structures on the upper and lower surfaces of the top plate (006) is completed; preferably, the insulating material is ABF material;

[0130] Next, mount the top electrode (011) of the top plate on the upper surface of the top plate (006) and mount the bottom electrode (012) of the top plate on the lower surface;

[0131] After that, a low-voltage power supply unit (005) is mounted on the top electrode (011) of the top plate, a passive device (002) is mounted on the top electrode (011) of the top plate, a passive device (002) is mounted on the bottom electrode (012) of the top plate, and a secondary electrical interconnection structure (007) is welded. Preferably, the secondary electrical interconnection structure (007) is a spring pin. Then, the preparation of the top plate and the top plate power supply and distribution sub-module is completed. Among them, Figure 4 The mounting of the passive device (002) shown in Figure 4 on the top electrode (011) and the bottom electrode (012) of the top plate is only for illustration. During implementation, according to actual design requirements, the passive device (002) can be mounted at the corresponding positions on the top electrode (011) or the bottom electrode (012) of the top plate.

[0132] Prepare the bottom plate and the bottom plate power supply and distribution unit, as Figure 5 shown, which specifically includes the following steps:

[0133] S31: In a new core board, the areas of each bottom plate power supply and distribution sub-module are correspondingly divided, and slots with upper and lower openings are opened at the corresponding positions of the buried capacitors in each bottom plate power supply and distribution sub-module area;

[0134] S32: Set a barrier film on the lower opening surface of the slot;

[0135] S33: After placing the buried capacitor into the corresponding slot, press a layer of insulating layer on the upper opening surface of the slot;

[0136] S34: Remove the barrier film, and then press a layer of insulating layer on the lower opening surface of the slot;

[0137] S35: Generate metal holes and metal lines connecting the buried capacitors in the insulating layer;

[0138] S36: If it is necessary to prepare multiple single-layer buried capacitor core boards, repeat S31 - S35 until the preparation of multiple single-layer buried capacitor core boards is completed and then execute S37. Otherwise, use the single-layer buried capacitor core board as the bottom plate and execute S38;

[0139] S37: Press multiple single-layer buried capacitor core boards together in sequence to obtain the bottom plate;

[0140] S38: Generate insulating layers layer by layer on the upper and lower surfaces of the bottom plate. For each generated insulating layer, generate a metal line layer and metal holes connecting the metal line layers in the generated insulating layer until the preparation of the corresponding circuit structure is completed;

[0141] S39: Set the top electrode and bottom electrode of the bottom plate;

[0142] S310: Set an external output interface corresponding to the bottom electrode of the bottom plate of the bottom plate power supply and distribution unit.

[0143] The first step in fabricating the baseboard and its power supply and distribution unit is to fabricate a single-layer embedded capacitor core board, which specifically includes:

[0144] Divide the areas for each baseboard power supply and distribution sub-module in a new core board, and open slots with upper and lower openings at the corresponding positions of the embedded capacitors in each area for the baseboard power supply and distribution sub-module. Figure 5 Shown in is the side cross-section of the core board after slotting. The two blank positions are the slots opened in the core board.

[0145] Mount a temporary blocking film on the bottom surface of the core board to block the lower openings of the opened slots.

[0146] Place the PDN capacitors in the corresponding slots, and press and bond an insulating material on the upper surface of the core board to form an insulating layer, so as to complete the filling of the upper openings of the slots and fix the PDN capacitors.

[0147] Remove the temporary blocking film and form an insulating layer on the lower surface of the core board.

[0148] Laser-machine vias connecting the embedded capacitors, electroplate the upper and lower surfaces of the core board and then etch metal lines, electroplate the vias to obtain metal holes, thus obtaining the fabricated single-layer embedded capacitor core board.

[0149] Repeat the steps for fabricating the single-layer embedded capacitor core board to obtain all single-layer embedded capacitor core boards.

[0150] Then, press and bond all the single-layer embedded capacitor core boards correspondingly to obtain the baseboard (008). If only one single-layer embedded capacitor core board is needed, use one single-layer embedded capacitor core board as the baseboard (008).

[0151] Next, mechanically drill holes on the upper and lower surfaces of the baseboard (008), electroplate the hole walls with metal to obtain metal holes (017) connecting the metal lines on the upper surface and the lower surface of the baseboard (008), and then use a solder resist material to plug the metal holes (017).

[0152] Then, based on the circuit topology of each baseboard power supply and distribution unit, layer by layer, press and bond an insulating material on the upper and lower surfaces of the baseboard (008) to form an insulating layer. Then, after laser-drilling holes in the newly formed insulating layer, metallize the hole walls, and then etch metal lines on the surface of the metallized hole walls. Repeat the process steps of pressing and bonding the insulating layer, drilling holes and then metallizing, and etching metal lines until the circuit structures on the upper and lower surfaces of the baseboard (008) are fabricated. Then, mount a baseboard top electrode (013) on the upper surface of the baseboard (008) and a baseboard bottom electrode (014) on the lower surface.

[0153] Preferably, the insulating material is an ABF material.

[0154] After that, solder balls are implanted at the bottom of the bottom electrode (014) of the bottom plate to generate an external output interface (015), thus completing the preparation of the bottom plate and the bottom plate power supply and distribution unit.

[0155] In the final assembly step, as Figure 6 shown, it specifically includes:

[0156] First, the processed top plate and the top plate power supply and distribution sub-module, the bottom plate and the bottom plate power supply and distribution unit are press-connected, and the other end of the spring needle serving as the secondary electrical interconnection structure (007) is connected to the corresponding position of the top electrode of the bottom plate, so that the top plate and the bottom plate form an integral body. Then, a copper metal plate serving as a heat dissipation and voltage equalization structure is bonded to the low-voltage power supply unit of the top plate power supply and distribution sub-module, and the copper metal plate and the top plate are connected and fixed by bolts;

[0157] Then, one end of the primary electrical interconnection structure (004) is press-connected to the bottom electrode of the previous stage (010), and the other end is connected to the top electrode of the top plate (011). Among them, the primary electrical interconnection structure is preferably a spring needle, and a copper column or a substrate can also be used, thus completing the assembly of the overall structure.

[0158] Those skilled in the art can understand that all or part of the processes for implementing the methods of the above embodiments can be completed by instructing relevant hardware through a computer program, and the program can be stored in a computer-readable storage medium. Among them, the computer-readable storage medium is a magnetic disk, an optical disk, a read-only memory or a random access memory, etc.

[0159] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention should be covered within the protection scope of the present invention.

Claims

1. A vertical power supply and distribution structure for a die - mounted system with a crimping structure, characterized in that, The structure includes a pre-stage substrate, a top plate, and a bottom plate that are stacked in sequence. The pre-stage substrate is provided with a pre-stage power supply and distribution module. The top plate is provided with a plurality of parallel-connected top plate power supply and distribution sub-modules. The bottom plate is provided with multiple groups of parallel-connected bottom plate power supply and distribution sub-modules. Each group of bottom plate power supply and distribution sub-modules includes at least one bottom plate power supply and distribution unit. Among them, the pre-stage power supply and distribution module and the top plate power supply and distribution sub-modules are connected through a first-level electrical interconnection structure. The pre-stage power supply and distribution module steps down the input voltage and then outputs a first-level output voltage, and then outputs the first-level output voltage to all the top plate power supply and distribution sub-modules through the first-level electrical interconnection structure; the top plate power supply and distribution sub-modules and the corresponding bottom plate power supply and distribution sub-modules are connected through a second-level electrical interconnection structure. Each top plate power supply and distribution sub-module steps down the first-level output voltage and then outputs a second-level output voltage, and then outputs the second-level output voltage to the corresponding bottom plate power supply and distribution sub-module through the second-level electrical interconnection structure; the power supply and distribution unit in the bottom plate power supply and distribution sub-module is used to convert the second-level output voltage into a load output voltage, and then output the load output voltage through the corresponding external output interface.

2. The vertical power supply and distribution structure of a flip-chip structure on-chip system according to claim 1, wherein the pre-stage power supply and distribution module includes a pre-stage top electrode disposed on the upper surface of the pre-stage substrate, a pre-stage bottom electrode disposed on the lower surface of the pre-stage substrate, and a high-voltage power supply unit disposed above the pre-stage top electrode; the pre-stage top electrode and the pre-stage bottom electrode are connected through a metal hole disposed in the pre-stage substrate.

3. The vertical power supply and distribution structure of a flip-chip structure on-chip system according to claim 2, wherein the top plate power supply and distribution sub-module includes a top plate top electrode disposed on the upper surface of the top plate, a top plate bottom electrode disposed on the lower surface of the top plate, and a low-voltage power supply unit disposed above the top plate top electrode; corresponding metal lines are respectively disposed below the top plate top electrode and above the top plate bottom electrode. The metal line connecting the top plate top electrode and the metal line connecting the top plate bottom electrode are both connected through a metal hole disposed in the top plate.

4. The vertical power supply and distribution structure of a flip-chip structure on-chip system according to claim 1, wherein each bottom plate power supply and distribution unit includes a bottom plate top electrode, a buried capacitor, and a bottom plate bottom electrode that are connected in sequence and vertically corresponding. Among them, the bottom plate top electrode is disposed on the upper surface of the bottom plate, the buried capacitor is disposed inside the bottom plate, and the bottom plate bottom electrode is disposed on the lower surface of the bottom plate; the bottom plate top electrode and the bottom plate bottom electrode are connected through a corresponding metal hole disposed in the bottom plate; the bottom plate bottom electrode is correspondingly connected to the external output interface below.

5. The vertical power supply and distribution structure of the chip-on-board system with a crimping structure according to claim 4, characterized in that, The buried capacitor has at least one layer; the single-layer buried capacitor is uniformly disposed in a core board with a thickness not exceeding 0.5 mm.

6. The vertical power supply and distribution structure of the die - mounted system with a crimping structure according to claim 5, characterized in that, The input voltage range is [40V, 60V], the first-level output voltage range is [4V, 6V], and the second-level output voltage range is [0.5V, 3.3V].

7. A vertical power supply and distribution structure for a wafer-level system with a crimping structure, characterized in that, The first-level electrical interconnection structure and the second-level electrical interconnection structure both include a plurality of connection units that are evenly distributed and vertically arranged. Among them, the number of connection units of the first-level electrical interconnection structure is the same as the number of power supply and distribution sub-modules on the top plate, and the number of connection units of the second-level electrical interconnection structure is the same as the number of power supply and distribution units on the bottom plate; one end of each connection unit of the first-level electrical interconnection structure is connected to the bottom electrode of the previous stage, and the other end is connected to the top electrode of the top plate; one end of each connection unit of the second-level electrical interconnection structure is connected to the bottom electrode of the top plate, and the other end is connected to the top electrode of the bottom plate.

8. A vertical power supply and distribution structure of a wafer-level system with a crimping structure according to claim 7, characterized in that, A heat dissipation and voltage equalization structure is provided on the top of all the power supply and distribution sub-modules on the top plate; an insulating and heat-conducting layer is provided at the bottom of the heat dissipation and voltage equalization structure, and a metal coating is provided at the top; the insulating and heat-conducting layer of the heat dissipation and voltage equalization structure is connected to the bottom of the low-voltage power supply unit, and the bottom of the heat dissipation and voltage equalization structure is also mechanically connected to the top of the top plate.

9. The vertical power supply and distribution structure of the chip-on system with a crimping structure according to claim 8, characterized in that, The thickness of the previous-stage substrate ≥ 2.5 mm; the thickness of the top plate ≥ 1 mm; the thickness of the bottom plate ≥ 1.6 mm; the length of the first-level electrical interconnection structure ≤ 10 cm; the length of the second-level electrical interconnection structure ≤ 5 mm.

10. A preparation method for a vertical power supply and distribution structure of a wafer-level system with a crimping structure, characterized in that, The method specifically includes: S1: Prepare the previous-stage substrate and the previous-stage power supply and distribution module; S2: Prepare the top plate and the power supply and distribution sub-module on the top plate; S3: Prepare the bottom plate and the power supply and distribution unit on the bottom plate; S4: Apply crimping to connect all the power supply and distribution sub-modules on the top plate and the corresponding power supply and distribution units on the bottom plate through the second-level electrical interconnection structure, and set a heat dissipation and voltage equalization structure on the power supply and distribution sub-modules on the top plate; S5: Apply crimping to connect the previous-stage power supply and distribution module and the corresponding power supply and distribution sub-modules on the top plate through the first-level electrical interconnection structure.

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