Dielectric resonance metasurface silicon-based InGaAs photoelectric detector based on high aspect ratio limited epitaxy technology and preparation method of dielectric resonance metasurface silicon-based InGaAs photoelectric detector

Abstract

According to the dielectric resonance metasurface silicon-based InGaAs photoelectric detector based on the high aspect ratio limited epitaxy technology and the preparation method of the dielectric resonance metasurface silicon-based InGaAs photoelectric detector based on the high aspect ratio limited epitaxy technology, a quantum well structure and a dielectric resonance metasurface structure in a specific shape are combined, and localization enhancement of a light field and improvement of light absorption efficiency and other performance are achieved. The specific preparation method comprises the following steps: growing a high-quality InGaAs / InP multi-quantum well structure on a silicon substrate based on a high aspect ratio limited epitaxial technology; preparing a ridge-shaped table top through photoetching and etching technologies; preparing a dielectric resonance metasurface structure on the top layer of the mesa by using electron beam exposure and etching technologies; metal layers are deposited on the structural substrate and the top layer of the device through electron beam evaporation and serve as an N electrode and a P electrode of the device respectively, device preparation is completed, and therefore effective optical detection of the 1550 nm optical communication wave band is achieved.

Description

Technical Field

[0001] The present invention relates to a method of combining a dielectric resonant metasurface structure with a silicon (Si)-based InGaAs photodetector by means of an aspect ratio trapping (ART) epitaxial technique, and more particularly to a dielectric resonant metasurface silicon-based InGaAs photodetector based on the aspect ratio trapping epitaxial technique and a method for manufacturing the same. Background Art

[0002] With the rapid evolution of the comprehensive informatization process, a new generation of information technologies represented by data intelligence, blockchain, cloud computing, Internet of Things, artificial intelligence, and high-speed wireless transmission continue to make breakthrough innovations, driving the global information transmission magnitude and network carrying capacity into a geometric progression growth stage. This transformation has prompted the data center and mobile communication fields to actively explore the potential of optical interconnection technologies to replace traditional electrical interconnection means, becoming a highly regarded research focus in the optical communication industry. The optical interconnection solution driven by Si-based photon integration technology, due to its economic advantages, high-density integration characteristics, and high compatibility with traditional complementary metal oxide semiconductor (CMOS) microelectronics processes, has gradually become a key technical path to break through the information transmission bottleneck. The core value of Si-based optical interconnection technology lies in its ability to efficiently achieve high-speed data transmission and significantly reduce energy consumption, which is of great significance for greatly improving the communication efficiency between processors and servers. In the widely applied and rapidly expanding optical communication technology, 1550 nm is an important signal band with low transmission loss, and there is also an urgent need to fabricate an efficient photodetector with good signal reception ability in this band. Traditional flat photodetectors can only excite simple cavity resonance modes and have weak ability to capture detection light, which limits the further improvement of performance indicators such as the responsivity of photodetectors. As a two-dimensional structure array composed of sub-wavelength all-dielectric materials, the dielectric resonant metasurface generates a resonant bound light field through geometric structure and spatial arrangement, and has the characteristics of tuning the polarization, amplitude, and phase of incident electromagnetic waves, as well as generating localization and near-field enhancement.

[0003] Based on the application requirements of Si-based optical interconnection, the present application introduces a dielectric resonant metasurface into a Si-based photodetector to break through the performance ceiling and achieve a high-performance, low-loss Si-based photodetector. By using the ART epitaxial technique to grow high-quality InGaAs / InP multiple quantum well materials on a Si substrate, and by optimizing the parameters of the dielectric resonant metasurface unit structure, the light absorption efficiency, photocurrent, dark current, and responsivity and other characteristics in the near-infrared region are optimized to realize a Si-based photodetector with high responsivity at 1550 nm, providing a theoretical basis and experimental accumulation for Si-based optical interconnection. Summary of the Invention

[0004] The object of the present invention is to overcome the deficiencies of existing Si-based integrated high-performance photodetectors, and to propose a dielectric resonance metasurface Si-based InGaAs photodetector based on deep high-aspect-ratio confinement epitaxy technology and its manufacturing method. By introducing a dielectric resonance metasurface on the top layer of the device, the light confinement ability is effectively improved, the light absorption efficiency is increased, and a 1550 nm Si-based InGaAs photodetector with high responsivity is realized. Under the same conditions, compared with the Si-based InGaAs photodetector without introducing a dielectric resonance metasurface, the performance is greatly improved and enhanced. The research results are expected to provide a new idea for the development of Si-based photodetectors and lay a foundation for practical Si-based photodetectors.

[0005] Based on the above object, the present invention adopts the following technical solutions: A dielectric resonance metasurface Si-based InGaAs photodetector based on deep high-aspect-ratio confinement epitaxy technology includes a Si substrate. A growth buffer layer, a multi-quantum well layer, and a capping layer are sequentially provided on the Si substrate from bottom to top. A dielectric resonance metasurface structure is provided on the upper surface of the capping layer. Metal electrodes are provided on the mesa of the Si substrate and the top of the capping layer.

[0006] Further, the pattern of the dielectric resonance metasurface structure is L-shaped, grid-shaped, triangular, circular, and square; the distance between patterns is one period, the period is 1.0 - 1.5 μm, the radius of the circumscribed circle of the pattern is 200 - 250 nm, and the depth of the pattern is 150 - 300 nm.

[0007] Further, the materials of the growth buffer layer and the capping layer are both InP. The thickness of the growth buffer layer is 400 - 700 nm, and the thickness of the capping layer is 150 - 300 nm; the material of the multi-quantum well layer is InGaAs / InP, and the material of the metal electrode is Au with a thickness of 150 - 200 nm.

[0008] Further, there are 1 - 5 layers of InGaAs / InP multi-quantum well layers. The thickness of the InGaAs layer in the InGaAs / InP multi-quantum well layer is 1 - 5 nm, and the thickness of the InP layer is 5 - 10 nm.

[0009] The manufacturing method of the above-mentioned dielectric resonance metasurface Si-based InGaAs photodetector based on deep high-aspect-ratio confinement epitaxy technology includes the following steps: (1) Grow a silicon dioxide (SiO2) layer on the Si substrate, etch trenches on the SiO2 layer; remove the SiO2 at the bottom of the trenches to expose the Si substrate; (2) Sequentially grow a buffer layer, a multi-quantum well layer, and a capping layer on the Si substrate in the trenches; (3) Use photolithography and ICP etching methods to form periodic ridge-shaped mesas on the substrate; (4) Different-shaped dielectric resonant metasurface structures are etched on the top of the capping layer by using electron beam lithography and RIE etching methods; (5) Metal electrode layers are prepared on the mesa of the Si substrate and the top of the capping layer, serving as the N electrode and P electrode of the device respectively, thus obtaining the device.

[0010] Further, in step (1), the trench width is 200 - 300 nm, and the thickness of the silicon dioxide layer is 600 - 700 nm; in step (2), the growth raw materials of the buffer layer are TMIn and PH3 gases, the input molar flow ratio V / III during the growth process is 660 - 670, and the growth temperature is 545 - 555 °C.

[0011] Further, in step (2), the multi-quantum well layer is 1 - 5 periods of InGaAs / InP. First, a layer of InGaA with a thickness of 1 - 5 nm is grown, and then, the input molar flow ratio of PH3 and TMIn gases is adjusted to grow a layer of InP with a thickness of 5 - 10 nm, obtaining one period of InGaAs / InP layer. This operation is repeated 1 - 4 times to obtain a 2 - 5 period InGaAs / InP multi-quantum well structure.

[0012] Further, in step (2), the raw materials of the capping layer are TMIn and PH3 gases, the input molar flow ratio V / III of TMIn and PH3 gases is 5 - 15, and the growth temperature is 590 - 610 °C.

[0013] Further, in step (3), the photolithography exposure time is 80 - 90 s, the photoresist is DNR-L300-D1, the development time is 12 - 15 s, the etched shape of the mesa is square, and the ICP etching depth is 450 - 550 nm.

[0014] Further, in step (4), the electron beam lithography time is 30 - 90 s, the exposure energy density is (1.0 - 2.0)×10 8 W / cm 2 , the RIE etching depth is 150 - 300 nm, and the etching time is 9 - 11 min.

[0015] The beneficial effects of the present invention are as follows: 1. Starting from the optical detection part of Si-based photon integration, the characteristics of the InGaAs / Si heterointerface under ART epitaxial technology are studied, and a new sub-wavelength local field enhancement structure with high responsivity is introduced, laying a foundation for the miniaturization, high performance and practical application of Si-based photodetectors.

[0016] 2. Through theoretical analysis and simulation design, a high-responsivity Si-based optoelectronic detector with a dielectric resonance metasurface structure is proposed. The process preparation is simple, greatly improving the production efficiency and having great practical value. Description of the Drawings

[0017] Figure 1 It is the step diagram of the present invention; Figure 2 It is the three-dimensional structure schematic diagram of the present invention; Figure 3 It is the process flow diagram of device preparation in the present invention; Figure 4 It is the absorption rate comparison diagram of the presence or absence of dielectric resonance metasurface under different shapes in the present invention; Figure 5 It is the simulation analysis diagram of the responsivity and quantum efficiency of the device in the present invention; Figure 6 It is the optoelectronic characteristic curve of the actually tested Si-based InGaAs optoelectronic detector in the present invention; Figure 7 It is the responsivity diagram of the actually tested Si-based InGaAs optoelectronic detector in the present invention. Detailed Embodiments

[0018] In order to make the technical objectives, technical solutions and beneficial effects of the present invention clearer, the technical solutions of the present invention will be further described below with reference to the drawings and specific embodiments.

[0019] The optoelectronic detector described in the present invention is on a Si substrate. Limited by the bandgap structure of Si material, pure Si cannot achieve effective light detection in the communication band. The high aspect ratio limits the epitaxial technology. III-V materials are grown in high aspect ratio trenches along the

[110] direction. All dislocations originating from the heterointerface will terminate at the oxide sidewalls and be trapped, thus forming a dislocation-free epitaxial layer directly above the Si substrate. Planar defects parallel to the trenches will also be trapped by the oxide sidewalls. Therefore, the present application introduces the ART epitaxial technology to realize high-quality InGaAs / InP multi-quantum well detection functional materials on the Si substrate.

[0020] The Si-based photodetector described is of a PIN-type structure. Although this structure has characteristics such as high sensitivity, wide-band characteristics, low noise, and simple structure, it also has the disadvantages of small output current and low gain, which is contrary to the concept of the high-performance Si-based photodetector studied in this invention. The dielectric resonant metasurface structure can generate a strong resonance effect at a specific wavelength or frequency by precisely designing and regulating dielectric units at the micro-nano scale. It can not only achieve the field enhancement effect at a specific wavelength but also flexibly regulate characteristics such as the amplitude, phase, and polarization of light waves. Therefore, this application combines the PIN-type Si-based photodetector with the dielectric resonant metasurface structure to realize the preparation of a Si-based photodetector with high responsivity.

[0021] The patterns selected for the dielectric resonant metasurface structure in the said structure are L-shaped, grid-shaped, triangular, circular, and square. These several structures can significantly enhance the electromagnetic field intensity inside the dielectric holes by exciting Mie resonances, thereby improving the light absorption efficiency. Resonance occurs when the frequency of the incident light matches the natural frequency of the dielectric holes, resulting in the effective absorption of light energy. At the same time, when light rays are incident on the dielectric surface, part of the light rays enter the dielectric holes and undergo multiple reflections and scatterings, prolonging the residence time of light in the material, increasing the interaction between light and the material, and thus improving the light absorption efficiency. Through these two processes, the dielectric resonant metasurface can significantly improve the light absorption efficiency and the performance of the photodetector. In the research, these five selected patterns belong to relatively classic structures in the dielectric resonant metasurface and the manufacturing process is relatively simple. The three-dimensional structure schematic diagram of the dielectric resonant metasurface structure Si-based photodetector is as Figure 2 shown. From bottom to top, they are an N-type Si substrate, an N-type InP substrate, an InP buffer layer with a thickness of 500 nm and four periods of InGaAs / InP multiple quantum well structures (where the thickness of the InGaAs well is 3 nm and the thickness of the InP barrier is 6 nm) epitaxially grown by MOCVD epitaxy technology, and a 200-nm-thick InP cap layer on the top. Then, a dielectric resonant metasurface structure with a corresponding shape is etched on the surface of its structure through semiconductor processing technology. Finally, electrodes are deposited on the N-type silicon substrate and the P-type cap layer to realize a complete device structure.

[0022] To verify the rationality of the five selected structures, the light absorption rates of the five different shapes were analyzed. Taking the circular dielectric resonant metasurface structure as an example below, the specific preparation process of the Si-based InGaAs photodetector is given.

[0023] Example 1 A preparation method of a dielectric resonant metasurface Si-based InGaAs photodetector based on ART epitaxy technology is as Figure 1 and Figure 3 shown. The process is as follows Step 1: Grow a SiO2 base layer on the Si substrate by a conventional thermal oxidation method. The thickness of the SiO2 base layer is 600 nm. Use a high aspect ratio confinement technique and SiO2 trenches with AR>1 to better confine the formation of misfit dislocations and anti-phase domains (APDs).

[0024] Step 2: Use an ICP dry etching method to etch multiple trenches along the <110> direction of the Si substrate on the SiO2 base layer. The width of the trench 3 is 300 nm, and the depth is approximately the same as the thickness of the SiO2 layer, which is 600 nm. To improve the smoothness of its sidewalls, a 2.5% HF solution (mass percentage, the same below) is selected and used for wet etching treatment for 25 s.

[0025] Step 3: Clean with a 2.5% HF solution (rinse for 2 s) and a large amount of deionized water (rinse for 10 min) respectively to remove the remaining SiO2 layer at the bottom of the trench and expose the Si substrate. In this step, the residual SiO2 layer at the bottom must be cleaned thoroughly to provide excellent growth conditions and growth status for the material grown in the trench later.

[0026] Step 4: Use a MOCVD device to grow a buffer layer, a multi-quantum well layer, and a cap layer in the trench successively, as shown in Figure 3 .. The buffer layer material is InP, with a thickness of 500 nm. The growth raw materials are TMIn and PH3 gases. The molar flow rate of TMIn is 1.34×10 - 5 mol / min. The input molar flow rate ratio V / III during the growth process is 668, the growth temperature is 550 °C, and the growth rate is 0.5 nm / s.

[0027] The multi-quantum well is 4 periods of InGaAs / InP, and the In composition in the multi-quantum well layer is 60%. Among them, the molar flow rate of the raw material TEGa is 8.743×10 -6 mol / min. The input molar flow rate ratio of TEGa to AsH3 is 25, and the molar flow rate of TMIn is 1.34×10 -5 mol / min. The growth temperature is 700 °C, and the growth rate is 0.1 nm / s. First, grow a layer of InGaAs with a thickness of 3 nm. Subsequently, adjust the input molar flow rate ratio of PH3 to TMIn gas to 5, and the molar flow rate of TMIn is 1.34×10 - 5 mol / min. The growth temperature is 450 °C, and the growth rate is 0.1 nm / s. Grow a layer of 6 nm thick InP, and repeat this operation three times to obtain a four-period InGaAs / InP multi-quantum well structure.

[0028] The capping layer is InP with a thickness of 200 nm. The raw materials are TMIn and PH3, where the molar flow rate of TMIn is 1.34×10 - 5 mol / min, the molar flow rate ratio V / III of the TMIn and PH3 gases input is 10, the growth temperature is 600 °C, and the growth rate is 0.8 nm / s.

[0029] Step 5: Use photolithography and ICP etching methods to etch a periodic square ridge mesa extending from the bottom of the trench to the Si substrate, with a length and width of 22 μm, a period of 30 μm, and an etching depth of 500 nm. The photolithography exposure time is 90 s, the selected photoresist is DNR-L300-D1, and the development time is about 12 - 15 s. The etching equipment used is ICP-601, and the etching rates of the upper and lower electrodes are 400 nm / min and 200 nm / min respectively, and the etching time is about 30 min.

[0030] Step 6: Use electron beam lithography and RIE etching methods to etch different-shaped dielectric resonant metasurface structures on the top layer of the structure.

[0031] For electron beam lithography, the exposure time is about 1 min, and the exposure energy density is about 10 8 W / cm 2 , and the electron energy is about 50 keV. The etching method used is RIE etching, the etching shape is circular, the radius is 0.21 μm, the depth is 200 nm, and the period is 1.2 μm. The etching conditions are as follows: the temperature is 60 °C, the etching gas is Cl2 with a flow rate of 8 sccm, the inhibitor gas is CH4 with a flow rate of 6 sccm, the cleaning gas is H2 with a flow rate of 12 sccm, the coil power is 750 W, and the etching time is about 10 min.

[0032] Omit Step 6 to obtain a photodetector without introducing a dielectric resonant metasurface.

[0033] Step 7: Use electron beam evaporation to deposit metallic Au on the mesa of the Si substrate and the top layer of the structure, with a thickness of 180 nm, serving as the N electrode and P electrode of the device respectively. Then improve the ohmic contact of the device through rapid thermal annealing. The temperature of the rapid thermal annealing is 600 °C, and the annealing time is about 15 s. Thus, the fabrication process of the device is completed, and the final device structure is as shown in Figure 2 and Figure 3 shown.

[0034] Step 8: Test and analyze the optical and electrical properties of the device, including performance parameters such as responsivity, quantum efficiency, and optoelectronic characteristics. The results are shown in detail in Figures 4 to 7 .

[0035] As Figure 4 shown, the circular dielectric resonant metasurface has an optical absorption rate of 83%. Due to the influence of its diameter size, the circular dielectric resonant metasurface is more likely to exhibit uniform scattering characteristics at a specific frequency. Secondly, due to the smoothness and symmetry of the circular dielectric resonant metasurface, it is easier to achieve high-efficiency focusing and resonance. The shape and symmetry of the circular dielectric resonant metasurface minimize the optical loss during the diffraction and scattering processes.

[0036] Furthermore, the main characteristic parameters of the device under the circular dielectric resonant metasurface structure were analyzed, namely the change trends of the quantum efficiency (the quantum efficiency is a range, Figure 5 a is) and the responsivity. After introducing the dielectric resonant metasurface, the performance of both increased by about 10%, as Figure 5 shown. There is a trough near 1520 nm. This is because the absorption efficiency is negatively correlated with the quantum efficiency and the responsivity to a certain extent. Therefore, the quantum efficiency and the responsivity show troughs where the absorption efficiency is the highest. In addition, the device without the dielectric resonant metasurface structure also has relatively high quantum efficiency and responsivity, which is due to the promoting effect of the quantum well structure on parameters such as the quantum efficiency and the responsivity. However, in the entire wavelength range, the device performance of the dielectric resonant metasurface structure is still superior to that of the device without the dielectric resonant metasurface structure.

[0037] Example 2 To verify the rationality of the design, relevant test analyses were carried out on the fabricated device. The optoelectronic characteristic curve of the current varying with power of the device under a bias voltage of +3.5 V and irradiated by a 1550 nm laser is as Figure 6 shown. The current of the photodetector without the dielectric resonant metasurface changes relatively smoothly with power, and the curve is almost a straight line and saturates at a power of 18 mW, indicating that the sensitivity of this structure is poor but the linearity is good. The current of the photodetector with the dielectric resonant metasurface changes relatively smoothly when the power is between 8 and 15 mW, and it shows an almost linear increase between 15 and 18 mW, indicating that in this power range, the sensitivity of the device has increased and the linearity is good. This is because introducing the dielectric resonant metasurface structure can optimize the optical field distribution, enhance the interaction between light and matter, capture more optical signals, focus the optical signals on the sensitive area of the device, and reduce the optical signal loss, thereby improving performance such as sensitivity.

[0038] Furthermore, the responsivity curve measured when the bias voltage of the device is +3.5 V is as Figure 7As shown in the figure. From top to bottom in the figure are the responsivity curves of the dielectric resonance metasurface structure, the spine structure, and the planar structure. The spine structure is a structure without a dielectric resonance metasurface and only has an etched mesa. The device fabrication process is as described in the aforementioned steps (1) to (5), (7). The planar structure is a structure without a dielectric resonance metasurface and a ridge mesa, and the steps are as described in the aforementioned steps (1) to (4), (7). From Figure 7 It can be seen that the responsivity of the photodetector with the dielectric resonance metasurface structure is 2.88 mA / W at 1550 nm. Compared with the responsivity of the spine structure of 1.38 mA / W and the responsivity of the planar structure of 0.62 mA / W, it is increased by 2.09 times and 4.65 times respectively. At the same time, there is an obvious characteristic response peak at 1550 nm, which is very consistent with the original intention of the designed Si-based photodetector with a wavelength of 1550 nm. In addition, there are no characteristic resonance peaks in the other two structures. This is because a specific dielectric resonance metasurface structure is introduced. Through the parameters and arrangement of this structure, electromagnetic dipole resonance is excited, affecting the field distribution and intensity, thereby generating resonance peaks in a specific wavelength band. It shows that introducing a dielectric resonance metasurface structure can achieve the effect of tuning the position and intensity of the resonance peak.

[0039] Finally, it should be noted that the above embodiments are only used to illustrate rather than limit the technical solutions of the present invention. Any equivalent replacement of the present invention and modifications or partial replacements that do not depart from the spirit and scope of the present invention shall be covered by the scope of protection of the claims of the present invention.

Claims

1. A silicon-based InGaAs photodetector with a dielectric resonance metasurface based on high aspect ratio confinement epitaxy technology, characterized in that It includes a silicon substrate, on which a growth buffer layer, a multi-quantum well layer, and a cap layer are sequentially provided from bottom to top. A dielectric resonant metasurface structure is provided on the upper surface of the cap layer, and metal electrodes are provided on the mesa of the silicon substrate and the top of the cap layer.

2. The dielectric resonance metasurface silicon-based InGaAs photodetector based on the high aspect ratio confinement epitaxy technology according to claim 1, wherein The patterns of the dielectric resonant metasurface structure are L-shaped, grid-shaped, triangular, circular, and square. The distance between the patterns is one period, and the period is 1.0 - 1.5 μm. The radius of the circumscribed circle of the pattern is 200 - 250 nm, and the depth of the pattern is 150 - 300 nm.

3. The medium resonance metasurface silicon-based InGaAs photodetector based on the high aspect ratio restricted epitaxy technology according to claim 1, wherein The materials of the growth buffer layer and the cap layer are both InP. The thickness of the growth buffer layer is 400 - 700 nm, and the thickness of the cap layer is 150 - 300 nm. The material of the multi-quantum well layer is InGaAs / InP, and the material of the metal electrode is Au with a thickness of 150 - 200 nm.

4. The dielectric resonance metasurface silicon-based InGaAs photodetector based on the high aspect ratio confinement epitaxy technology according to claim 3, characterized in that, There are 1 - 5 layers of InGaAs / InP multi-quantum well layers. The thickness of the InGaAs layer in the InGaAs / InP multi-quantum well layer is 1 - 5 nm, and the thickness of the InP layer is 5 - 10 nm.

5. The preparation method of the dielectric resonance metasurface silicon-based InGaAs photodetector based on the high aspect ratio confinement epitaxy technology according to any one of claims 1 to 4, characterized in that, It includes the following steps: (1) Grow a silicon dioxide layer on the silicon substrate, etch trenches on the silicon dioxide layer; remove the silicon dioxide at the bottom of the trenches to expose the Si substrate; (2) Sequentially grow a buffer layer, a multi-quantum well layer, and a cap layer on the silicon substrate in the trenches; (3) Form periodic ridge-shaped mesas on the substrate by photolithography and ICP etching; (4) Etch different-shaped dielectric resonant metasurface structures on the top of the cap layer by electron beam lithography and RIE etching; (5) Prepare a metal electrode layer on the mesa of the Si substrate and the top of the cap layer, which are respectively used as the N electrode and P electrode of the device, thus obtaining the product.

6. The preparation method of the dielectric resonance metasurface silicon-based InGaAs photodetector based on the high aspect ratio confinement epitaxy technology according to claim 5, wherein, In step (1), the width of the trench is 200 - 300 nm, and the thickness of the silicon dioxide layer is 600 - 700 nm. In step (2), the raw materials for growing the buffer layer are TMIn and PH3 gases, and the input molar flow ratio V / III during the growth process is 660 - 670, and the growth temperature is 545 - 555 °C.

7. The manufacturing method of the dielectric resonance metasurface silicon-based InGaAs photodetector based on the high aspect ratio confinement epitaxy technology according to claim 5, wherein, In step (2), the multi-quantum well layer is 1 - 5 periods of InGaAs / InP. First, grow a layer of InGaA with a thickness of 1 - 5 nm, and then adjust the input molar flow ratio of PH3 and TMIn gases to grow a layer of InP with a thickness of 5 - 10 nm to obtain one period of InGaAs / InP layer. Repeat this operation 1 - 4 times to obtain a 2 - 5 period InGaAs / InP multi-quantum well structure.

8. The preparation method of the dielectric resonance metasurface silicon-based InGaAs photodetector based on the high aspect ratio confinement epitaxy technology according to claim 5, characterized in that, In step (2), the raw materials for the cap layer are TMIn and PH3 gases, and the input molar flow ratio V / III of MIn and PH3 gases is 5 - 15, and the growth temperature is 590 - 610 °C.

9. The preparation method of the silicon-based InGaAs photodetector of the dielectric resonance metasurface according to claim 5, characterized in that In step (3), the photolithography exposure time is 80 - 90 s, the photoresist is DNR-L300-D1, the development time is 12 - 15 s, the etched shape of the mesa is square, and the ICP etching depth is 450 - 550 nm.

10. The manufacturing method of the silicon-based InGaAs photodetector of the dielectric resonance metasurface according to claim 5, characterized in that, In step (4), the electron beam exposure time is 30 - 90 s, and the exposure energy density is (1.0 - 2.0)×10 8 W / cm 2 , the RIE etching depth is 150 - 300 nm, and the etching time is 9 - 11 min.

Images