Selective laser etching method of display mother board, display substrate and display device

Abstract

The invention discloses a selective laser etching method of a display mother board, a display substrate and a display device. The display mother board comprises a plurality of display substrates and a first modified area surrounding the display substrates, and the first modified area comprises a first alignment part surrounding the display substrates; the reflectivity of the first counterpoint part is greater than that of the other film layers in the first modified area; the method comprises the following steps: emitting an optical signal to a first reformed area from one side, not provided with a film layer, of a substrate, and determining a focal depth position of a first alignment part according to a reflected signal from the first alignment part; determining a first laser restructuring lower limit in the substrate according to the focal depth position; performing laser reformation on the substrate at the first laser reformation lower limit, and forming a first reformation channel which surrounds the display substrate and is positioned on one side, close to the display substrate, of the first alignment part in the substrate; the substrate is etched, so that a first opening is formed in the substrate along the first reformed channel; and taking down the display substrate from the display mother board along the first opening.

Description

Technical Field

[0001] This application relates to, but is not limited to, display technologies, and particularly to a method for selectively laser modifying a display mother board, a display substrate, and a display device. Background Art

[0002] An organic light emitting diode (OLED) is an active light emitting display device, which has the advantages of self-luminescence, wide viewing angle, high contrast ratio, low power consumption, extremely high response speed, etc. With the continuous development of display technologies, a display device using an OLED as a light emitting element and controlled by thin film transistors (TFTs) has become the mainstream product in the current display field. Summary of the Invention

[0003] The following is an overview of the subject matter described in detail in this application. This overview is not intended to limit the scope of protection of the claims.

[0004] Embodiments of the present disclosure provide a method for selectively laser modifying a display mother board, a display substrate, and a display device.

[0005] In a first aspect, embodiments of the present disclosure provide a method for selectively laser modifying a display mother board. The display mother board includes a plurality of display substrates and a first modified area surrounding the display substrates. The first modified area includes a first alignment portion surrounding the display substrates. The reflectivity of the first alignment portion is greater than the reflectivity of the remaining film layers within the first modified area. The method includes: emitting an optical signal from a side of the substrate without a film layer to the first modified area, and determining a focal depth position of a surface of the first alignment portion close to the substrate based on a reflected signal from the first alignment portion; determining a first laser modification lower limit based on the focal depth position of the surface of the first alignment portion close to the substrate, where the first laser modification lower limit is within the substrate; using a laser to modify the substrate at the first laser modification lower limit to form a first modified channel within the substrate; the first modified channel surrounds the display substrate and is located on a side of the first alignment portion close to the display substrate; etching the substrate from the side of the substrate without a film layer to form a first opening in the substrate along the first modified channel; and removing the display substrate from the display mother board along the first opening.

[0006] In an exemplary embodiment, the first alignment portion includes a plurality of first sub-alignment portions that are isolated from each other; determining the depth of focus position of the surface of the first alignment portion close to the substrate based on the reflection signal from the first alignment portion includes: determining the depth of focus position of the surface of the first sub-alignment portion close to the substrate based on the reflection signal from the first sub-alignment portion.

[0007] In an exemplary embodiment, in a plane perpendicular to the substrate, the first laser-modified track includes a plurality of first laser-modified points distributed at intervals; forming the first laser-modified track in the substrate by using a laser at the lower limit of the first laser modification includes: using the laser to form the plurality of first laser-modified points at the lower limit of the first laser modification on the substrate and at a plurality of preset points on the substrate that are away from the first alignment portion and at the lower limit of the first laser modification.

[0008] In an exemplary embodiment, during the process of forming the plurality of first laser-modified points by using the laser, the plurality of first laser-modified points form an arc shape that bends away from the display substrate in a plane perpendicular to the substrate.

[0009] In an exemplary embodiment, in a direction perpendicular to the substrate, the first laser-modified region includes the substrate, the first alignment portion, and a first etching barrier portion arranged in sequence, and the orthographic projection of the first etching barrier portion on the substrate at least covers the orthographic projection of the first laser-modified track on the substrate.

[0010] In an exemplary embodiment, in a direction perpendicular to the substrate, the first laser-modified region further includes a first sacrificial portion, and the first sacrificial portion is located on the side of the first etching barrier portion close to the substrate; the orthographic projection of the first sacrificial portion on the substrate at least covers the orthographic projection of the first laser-modified track on the substrate; the absorption rate of the first sacrificial portion to the laser is greater than the absorption rate of the remaining film layers in the first laser-modified region to the laser.

[0011] In an exemplary embodiment, the display substrate includes a display area, a peripheral area surrounding the display area, and a second modified area, and at least part of the display area surrounds the second modified area; a second alignment portion is disposed in the second modified area, and the reflectivity of the second alignment portion is greater than the reflectivity of the remaining film layers in the second modified area; before etching the substrate, the method further includes: emitting an optical signal from a side of the substrate without a film layer to the second modified area, and determining a focal depth position of a surface of the second alignment portion close to the substrate according to a reflected signal from the second alignment portion; determining a second laser modification lower limit according to the focal depth position of the surface of the second alignment portion close to the substrate, and the second laser modification lower limit is located in the substrate; using a laser to modify the substrate at the second laser modification lower limit to form a second modified track in the substrate; the second modified track has a closed shape surrounding the second alignment portion.

[0012] In an exemplary embodiment, etching the substrate from a side of the substrate without a film layer further includes: forming a second opening in the substrate along the second modified track; removing the film layer of the display substrate within the range of the second opening to form a first opening.

[0013] In an exemplary embodiment, in the plane of the substrate, the second alignment portion is located at the geometric center of the second modified track.

[0014] In an exemplary embodiment, the second alignment portion includes at least two second sub-alignment portions, and at least two of the second sub-alignment portions are isolated from each other.

[0015] In an exemplary embodiment, in a direction away from the geometric center of the second modified track, the size of the second sub-alignment portion is greater than the size of the second modified area.

[0016] In an exemplary embodiment, in a direction perpendicular to the substrate, the second modified area includes the substrate, the second alignment portion, a second etching barrier portion, a light-emitting structure layer, and an upper protective film arranged in sequence, and a positive projection of the second etching barrier portion on the substrate at least covers a positive projection of the second modified track on the substrate.

[0017] In an exemplary embodiment, in a direction perpendicular to the substrate, the second modified region further includes a second sacrificial portion, and the second sacrificial portion is located on a side of the second etching stopper portion close to the substrate; a positive projection of the second sacrificial portion on the substrate at least covers a positive projection of the second modified track on the substrate; an absorption rate of the second sacrificial portion for the laser is greater than an absorption rate of the remaining film layers in the second modified region for the laser.

[0018] In a second aspect, an embodiment of the present disclosure provides a display substrate, and the display substrate is obtained by using the selective laser etching method of the display mother board as described in any one of the above.

[0019] In a third aspect, an embodiment of the present disclosure provides a display device, including the display substrate as described above.

[0020] The selective laser etching method of the display mother board provided by the embodiment of the present disclosure sets a first alignment portion in the first modified region, and a reflectivity of the first alignment portion is greater than a reflectivity of the remaining film layers in the first modified region, so that an intensity of a reflected signal after the optical signal irradiates the first alignment portion is greater, forming a sharp contrast with the remaining reflected signals, and an accurate focal depth position on a surface of the first alignment portion close to the substrate and a first laser modification lower limit can be obtained, improving the precision of laser modification, avoiding damage to other film layers of the display substrate, making less structural changes to the display mother board, and having a simple manufacturing process.

[0021] Other aspects can be understood after reading and understanding the drawings and the detailed description. Description of the Drawings

[0022] The drawings are used to provide an understanding of the technical solutions of the present disclosure, and constitute a part of the specification, and are used to explain the technical solutions of the present disclosure together with the embodiments of the present disclosure, and do not constitute a limitation to the technical solutions of the present disclosure.

[0023] Figure 1 It is a schematic structural diagram of a display mother board;

[0024] Figure 2 It is in an exemplary embodiment Figure 1 a schematic plan view of the dashed area A;

[0025] Figure 3 It is a schematic cross-sectional structure diagram of a display substrate in a display area in an exemplary embodiment;

[0026] Figure 4 It is in an exemplary embodiment Figure 2 a cross-sectional view along the BB direction;

[0027] Figure 5 It is in an exemplary embodiment forFigure 4 Schematic diagram of the principle of laser focusing in the first reformed area;

[0028] Figure 6 is a schematic diagram showing a planar structure of a substrate in yet another exemplary embodiment;

[0029] Figure 7 is a schematic diagram of the shape of the first alignment portion in an exemplary embodiment;

[0030] Figure 8 is a schematic diagram of the principle of using a first alignment portion to perform laser focusing on a first modified area in an exemplary embodiment;

[0031] Figure 9 In an exemplary embodiment Figure 7 A cross-sectional view along the EE direction;

[0032] Figure 10 In an exemplary embodiment Figure 6 A top view of the dashed area C;

[0033] Figure 11 In yet another exemplary embodiment Figure 6 A top view of the dashed area C;

[0034] Figure 12 In an exemplary embodiment Figure 10 Cross-sectional view along EE direction;

[0035] Figure 13 In an exemplary embodiment, Figure 12 A cross-sectional view of a substrate after etching;

[0036] Figure 14 In an exemplary embodiment, Figure 12 A cross-sectional view of a substrate after a first opening is formed;

[0037] Figure 15 In another exemplary embodiment Figure 10 Cross-sectional view along EE direction. DETAILED DESCRIPTION

[0038] The present disclosure describes multiple embodiments, but the description is exemplary rather than restrictive, and it will be apparent to those of ordinary skill in the art that there can be more embodiments and implementation solutions within the scope encompassed by the embodiments described in the present disclosure. Although many possible combinations of features are shown in the drawings and discussed in the detailed description, many other combinations of the disclosed features are also possible. Unless specifically restricted, any feature or element of any embodiment can be used in combination with any other feature or element in any other embodiment, or can replace any other feature or element in any other embodiment.

[0039] The present disclosure includes and contemplates combinations with features and elements known to those of ordinary skill in the art. The embodiments, features, and elements already disclosed in the present disclosure can also be combined with any conventional features or elements to form unique inventive solutions defined by the claims. Any feature or element of any embodiment can also be combined with features or elements from other inventive solutions to form another unique inventive solution defined by the claims. Therefore, it should be understood that any feature shown and / or discussed in the present disclosure can be implemented alone or in any suitable combination. Therefore, the embodiments are not subject to other limitations except those made in accordance with the appended claims and their equivalents. In addition, various modifications and changes can be made within the scope of the appended claims.

[0040] In addition, when describing representative embodiments, the specification may have presented the method and / or process as a specific sequence of steps. However, to the extent that the method or process does not depend on the specific order of the steps described herein, the method or process should not be limited to the specific order of steps described. As will be understood by those of ordinary skill in the art, other step orders are possible. Therefore, the specific order of steps set forth in the specification should not be construed as a limitation on the claims. In addition, the claims directed to the method and / or process should not be limited to performing their steps in the order written, and those skilled in the art can easily understand that these orders can be varied and still remain within the spirit and scope of the embodiments of the present disclosure.

[0041] In the drawings, sometimes for clarity, the size, layer thickness, or area of one or more constituent elements is exaggerated. Therefore, one aspect of the present disclosure is not necessarily limited to that size, and the shape and size of one or more components in the drawings do not reflect the true scale. In addition, the drawings schematically show ideal examples, and one aspect of the present disclosure is not limited to the shapes or values shown in the drawings, etc.

[0042] The ordinal numbers such as "first", "second", "third", etc. in this specification are set to avoid confusion of components, rather than to limit the quantity. "Plural" in this disclosure means two or more quantities.

[0043] In this specification, for convenience, terms indicating orientation or positional relationship such as "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are used to describe the positional relationship of components with reference to the accompanying drawings. This is only for the convenience of describing this specification and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to this disclosure. The positional relationship of components changes appropriately according to the direction of the described components. Therefore, it is not limited to the terms described in the specification and can be replaced appropriately according to the situation.

[0044] In this specification, unless otherwise clearly specified and limited, the terms "mounted", "connected", and "coupled" shall be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate member, or the communication inside two elements. For those of ordinary skill in the art, the meanings of the above terms in this disclosure can be understood according to the situation.

[0045] In this specification, "electrically connected" includes the situation where components are connected together through an element having a certain electrical effect. There is no particular limitation on the "element having a certain electrical effect" as long as it can transmit electrical signals between the components to be connected. Examples of the "element having a certain electrical effect" include not only electrodes and wirings, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements having various functions.

[0046] In this specification, "parallel" means a state where the angle formed by two straight lines is more than -10° and less than 10°, and therefore, it also includes a state where the angle is more than -5° and less than 5°. In addition, "perpendicular" means a state where the angle formed by two straight lines is more than 80° and less than 100°, and therefore, it also includes a state where the angle is more than 85° and less than 95°.

[0047] The embodiments of this disclosure will be described in detail below with reference to the accompanying drawings.

[0048] Hybrid OLED technology is a newly emerging display technology in recent years. It uses the glass substrate of traditional rigid OLED and the thin film encapsulation (TFE) technology of flexible OLED, which can combine the advantages of rigid OLED and flexible OLED, reduce the thickness of the display substrate, and improve the display quality.

[0049] Figure 1 It is a schematic structural diagram of a display mother board. As Figure 1 shown, the display mother board M1 may include a plurality of display substrates J1. Figure 1 Here, taking the example of arranging eight display substrates J1 on a single display mother board M1 for illustration, the present disclosure does not limit the number of display substrates included on the display mother board. After the display mother board M1 is prepared, it is necessary to remove the individual display substrates J1 from the display mother board M1 to facilitate subsequent processing of the individual display substrates J1. In the traditional dicing process, it is necessary to cut along the contour of each display substrate J1 and then grind the cut surface of the display substrate J1. This process takes a long time and is likely to damage the display substrate. For hybrid OLED, after the glass substrate is cut by a dicing wheel, the strength near the cut is low, and it is easy to break during subsequent processes and use, affecting the user experience.

[0050] The inventors of the present application have proposed a new cutting idea through research, that is, using selective laser-induced etching (SLE) technology. First, the glass substrate of the hybrid OLED is laser-modified, and then the glass substrate is chemically etched. Since the etching rate of the glass substrate in the modified area is faster, the etched thicknesses of the glass substrate in the modified area and the unmodified area are different, which facilitates the fracture of the glass substrate at the modified area and facilitates the removal of the display substrate from the display mother board. Compared with the dicing process, the SLE technology is fast in operation, and the morphology of the glass substrate at the fracture is controllable, which helps to ensure the edge strength of the display substrate. However, the inventors of the present application have found in practice that it is not easy to accurately focus the laser during the modification process using the SLE technology.

[0051] Figure 2 For an exemplary embodiment Figure 1 the schematic plan view of the dashed area A. As Figure 2As shown, the display substrate may include a display area AA and a peripheral area PA surrounding the display area AA. The display mother board includes a first modified area Bx1 surrounding the peripheral area PA. After laser modification and chemical etching of the substrate of the display substrate in the first modified area Bx1, the display substrate can be removed from the display mother board. The display area AA at least includes a plurality of pixel units arranged regularly. The peripheral area PA includes a bonding area 200 on one side of the display area AA and a border area 300 on other sides of the display area AA. The bonding area 200 and the border area 300 are connected to each other and surround the display area AA. The first modified area Bx1 can surround the bonding area 200 and the border area 300. The bonding area 200 at least includes a bonding circuit for connecting signal lines of a plurality of display units to an external driving device. The border area 300 may include a gate driving circuit. As Figure 2 shown, the first direction X and the second direction Y may be located in the plane where the display area AA is located, and the first direction X and the second direction Y may intersect. For example, the first direction X and the second direction Y may be perpendicular to each other. The bonding area 200 may be located on one side of the display area AA in the second direction Y. A first modified path (not shown in the figure) is provided in the first modified area Bx1. Subsequently, the glass substrate can be modified along the first modified path, and after etching and other processes, a display substrate including the display area AA and the peripheral area PA is obtained. The shape of the first modified path is similar to the edge shape of the display substrate.

[0052] Figure 3 It is a schematic cross-sectional structure diagram of the display substrate in the display area in an exemplary embodiment, showing the structures of three sub-pixels on the display substrate. As Figure 3 shown, in a plane perpendicular to the display substrate, the display substrate in the display area may include a driving circuit layer 102 provided on the substrate 101, a light-emitting structure layer 103 provided on the side of the driving circuit layer 102 away from the substrate 101, and a packaging layer 104 provided on the side of the light-emitting structure layer 103 away from the substrate 101. In some possible implementation manners, the display substrate may include other film layers, such as spacer posts, etc., which are not limited in the present disclosure.

[0053] In an exemplary embodiment, the material of the substrate 101 may be glass. The driving circuit layer 102 of each sub-pixel may include a plurality of transistors constituting the pixel driving circuit and storage capacitors. In a direction perpendicular to the substrate 101, the driving circuit layer 102 includes a bottom shielding metal layer (BSM, Bottom Shielding Metal), a first semiconductor layer, a first gate metal layer, a second gate metal layer, and a source-drain metal layer arranged in sequence, wherein the bottom shielding metal layer, the first gate metal layer, the second gate metal layer, and the source-drain metal layer are all metal layers. The bottom shielding metal layer may include a plurality of light-shielding portions 11 configured to at least partially cover the active layers of the transistors of the pixel circuit to prevent external light from affecting the performance of the transistors, and the plurality of light-shielding portions 11 are interconnected with each other. The first semiconductor layer may include the active layers 13 of the transistors of the plurality of pixel circuits, the first gate metal layer may include the gate electrodes 15 of the transistors of the plurality of pixel circuits and the first plates 16 of the plurality of storage capacitors, the second gate metal layer may include the second plates 18 of the plurality of storage capacitors, and the corresponding second plates 18 and first plates 16 at least partially overlap in a direction perpendicular to the substrate 101. The source-drain metal layer may include the source electrodes 20 and drain electrodes 21 of the transistors of the plurality of pixel circuits, and the source electrodes 20 and drain electrodes 21 are respectively connected to the active layer 13 through vias. A buffer layer 12 may be provided between the bottom shielding metal layer and the first semiconductor layer. The buffer layer 12 can prevent harmful substances in the substrate 101 from invading the interior of the display substrate and can also increase the adhesion of the film layers in the display substrate to the substrate 101. A first gate insulation (GI) layer 14 may be provided between the first semiconductor layer and the first gate metal layer, a second gate insulation layer 17 may be provided between the first gate metal layer and the second gate metal layer, an interlayer insulation (ILD) layer 19 may be provided between the second gate metal layer and the source-drain metal layer, a passivation (PVX) layer 22 and a planarization (PLN) layer 23 may be sequentially provided on a side of the source-drain metal layer away from the substrate 101, and a light-emitting structure layer 103 may be provided on a side of the planarization layer 23 away from the substrate 101. Among them, the buffer layer 12, the first gate insulation layer 14, the second gate insulation layer 17, and the passivation layer 22 may be inorganic insulation layers, and the planarization layer 23 may be an organic insulation layer. In other embodiments, a third gate metal layer may be provided between the second gate metal layer and the source-drain metal layer, or a larger number of gate metal layers may be provided. The gate electrode 15 and the first plate 16 may be respectively provided on different gate metal layers, and the storage capacitor may also include a larger number of plates, and different plates may be provided on different metal layers. The present disclosure does not limit this.In other embodiments, the source-drain metal layer may include a first source-drain metal layer and a second source-drain metal layer sequentially arranged in a direction away from the substrate 101. The source electrode 20 and the drain electrode 21 may be located in the first source-drain metal layer. A transfer electrode may be provided in the second source-drain metal layer. The transistor may be connected to the corresponding light-emitting element through the transfer electrode. The source-drain metal layer may further include a larger number of metal layers. The transistor may be connected to the corresponding light-emitting element through multiple transfer electrodes located in different metal layers. A passivation layer and a planarization layer may be provided between the multiple source-drain metal layers, or only a planarization layer may be provided between the multiple source-drain metal layers. A passivation layer and a planarization layer may be provided between the light-emitting structure layer 103 and the nearest source-drain metal layer. The present disclosure does not limit this.

[0054] In an exemplary embodiment, the light-emitting structure layer 103 may include an anode 301, a pixel definition layer 304, an organic light-emitting layer 302, and a cathode 303. The anode 301 is connected to the drain electrode 21 of the driving transistor through a via. The organic light-emitting layer 302 is connected to the anode 301, and the cathode 303 is connected to the organic light-emitting layer 302. The organic light-emitting layer 302 emits light of a corresponding color under the drive of the anode 301 and the cathode 303. The pixel definition layer 304 may be disposed on a side of the planarization layer 23 away from the substrate 101. The pixel definition layer 304 may be provided with a plurality of pixel openings. One pixel opening may expose at least a part of the surface of a corresponding anode 301. The anodes 301 of multiple sub-pixels are isolated from each other. At least a part of the organic light-emitting layer 302 may be disposed within one pixel opening. The cathode 303 may entirely cover the substrate 101, that is, the cathodes 303 of multiple sub-pixels may be connected to each other. In an exemplary embodiment, an isolation pillar (PS) 305 may be provided on a side of the pixel definition layer 304 away from the substrate 101. The present disclosure does not limit this.

[0055] In an exemplary embodiment, the organic light-emitting layer 302 may include an emitting layer (EML), and one or more of the following film layers: a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL). For example, the organic light-emitting layer 302 may include a hole injection layer, a hole transport layer, an electron blocking layer, a emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer stacked in sequence in a direction away from the base substrate 101. In an exemplary embodiment, the hole injection layers of all sub-pixels may be a common layer connected together, the electron injection layers of all sub-pixels may be a common layer connected together, the hole transport layers of all sub-pixels may be a common layer connected together, the electron transport layers of all sub-pixels may be a common layer connected together, the hole blocking layers of all sub-pixels may be a common layer connected together, the light-emitting layers of adjacent sub-pixels may have a small amount of overlap, or may be isolated, and the electron blocking layers of adjacent sub-pixels may have a small amount of overlap, or may be isolated.

[0056] In an exemplary embodiment, the encapsulation layer 104 may include a first encapsulation layer 401, a second encapsulation layer 402, and a third encapsulation layer 403 stacked together. The first encapsulation layer 401 and the third encapsulation layer 403 may be made of inorganic materials, and the second encapsulation layer 402 may be made of organic materials. The second encapsulation layer 402 is disposed between the first encapsulation layer 401 and the third encapsulation layer 403 to ensure that external water vapor cannot enter the light-emitting structure layer 103. In an exemplary embodiment, the display substrate may further include a film layer such as a touch layer located on a side of the encapsulation layer 104 away from the base substrate 101, and the present disclosure is not limited thereto.

[0057] Figure 4 In an exemplary embodiment Figure 2 The cross-sectional view along the BB direction shows the film structure of the display substrate near the first reformed area Bx1. Figure 4As shown, in the first reformed area Bx1 and the peripheral area PA, the display substrate includes a base substrate 101, a buffer layer 12 and a flat layer 23 arranged in sequence. The number of film layers in the first reformed area Bx1 is smaller, which is helpful for removing the display substrate from the display motherboard later. The first reformed path Px1 can be located in the first reformed area Bx1 and surround the peripheral area PA. In other embodiments, the buffer layer 12 may not be provided on the display substrate, and the present disclosure is not limited to this.

[0058] like Figure 4 As shown, the first modification path Px1 may include a plurality of discrete first modification points, and the plurality of first modification points are located inside the base substrate 101. In a plane perpendicular to the base substrate 101, the plurality of first modification points may be connected to form an arc shape that bends away from the peripheral area PA. The edge shape of the subsequent single display substrate is similar to the arc shape, which helps to maintain a high edge strength. In this embodiment, a laser may be used to irradiate the surface of the display substrate through a diffractive optical element (DOE) Figure 4 The positions of the first modification points are determined to modify the base substrate 101. The position distribution of the first modification points can be designed as required, and a suitable DOE can be used to make the edge of the display substrate obtain a customized morphology. Figure 4 The first modification path of the shape shown can make the edge of the subsequently obtained display substrate have an arc shape, which helps to improve the edge strength of the display substrate. In other embodiments, the first modification path can be in other shapes such as a broken line or a curve in a plane perpendicular to the display motherboard. The distribution of multiple first modification points can be designed according to actual needs to obtain first modification paths of different shapes. Figure 4 In the description, the first reforming path Px1 including four first reforming points is taken as an example, and for the sake of clarity, each first reforming point is highlighted. The number of first reforming points included in the first reforming path Px1 can be set as needed, and the present disclosure does not limit this.

[0059] Figure 5 In an exemplary embodiment, Figure 4 FIG. 1 is a schematic diagram showing the principle of laser focusing in the first reformed area, omitting the peripheral area PA. Figure 5As shown, during the formation of the first modified track Px1, the side of the substrate 101 without the film layer can be facing upward, and a signal transmitter 21 and a signal receiver 22 can be provided above the substrate 101. The signal transmitter 21 can emit an optical signal to the substrate 101 in the first modified area Bx1, and the signal receiver 22 can receive multiple reflected signals after the optical signal irradiates the first modified area Bx1. According to the intensity difference between the multiple reflected signals, the first depth of focus (DOF) position of the surface of the side of the substrate 101 with the film layer can be determined. For example, the signal transmitter 21 can emit a first optical signal L1 to the substrate 101 in the first modified area Bx1, and the first optical signal L1 is incident on the first modified area Bx1 at a certain angle and is reflected on the surfaces of the respective film layers in the first modified area Bx1. As Figure 5 shown, the first optical signal L1 can generate a first reflected signal L2 on the surface of the substrate 101 on the side away from the film layer, a second reflected signal L3 on the surface of the buffer layer 12, and a third reflected signal L4 on the surface of the planarization layer 23. The first reflected signal L2, the second reflected signal L3, and the third reflected signal L4 are received by the signal receiver 22. It can be considered that the position where the second reflected signal L3 is generated is the first depth of focus position of the surface of the side of the substrate 101 with the film layer. After determining the first depth of focus position, a preset distance can be moved upward based on the first depth of focus position to obtain the first laser modification lower limit o1. Starting from the first laser modification lower limit o1, the corresponding first modification point can be formed, and moving upward along the first laser modification lower limit o1, the remaining multiple first modification points can be formed in sequence. The substrate 101 and the remaining film layers outside the first modified track Px1 will not be laser modified and will not be damaged. During the determination of each first modification point, the substrate 101 at the first modification point can be modified using a laser. After the modification, minute cracks are formed in the substrate 101 at the first modification point. Subsequently, during the etching process of the substrate 101, the etching rate at the first modification point is faster, and a fracture can be formed more quickly at the first modified track Px1, and the substrate 101 can be disconnected along the first modified track Px1.

[0060] However, since the material of the substrate 101 is glass, the material of the buffer layer 12 is generally silicon oxide (SiOx) or silicon nitride (SiNx), and the material of the planarization layer 23 is generally an organic material such as polyimide (PI). The light transmittance of these materials is relatively high, the intensities of the first reflection signal L2, the second reflection signal L3, and the third reflection signal L4 are relatively low, and the intensity differences between them are relatively small. The detector cannot accurately obtain the position of the first focal depth. In the case where the position of the first focal depth is inaccurate, the data of the first laser modification lower limit o1 is also inaccurate, the debugging accuracy of the laser is poor, and it is easy to damage the film layer under the substrate 101 during the modification process. Moreover, organic materials such as polyimide have a high absorption rate for infrared lasers. In the case where the debugging accuracy of the laser is poor, the planarization layer 23 is likely to absorb more laser light and generate microcracks during the modification process, affecting the yield and display effect of the display substrate.

[0061] An embodiment of the present disclosure provides a method for selectively laser etching a display mother board. The display mother board includes a plurality of display substrates and a first modification region surrounding the display substrates. The first modification region includes a first alignment portion surrounding the display substrates; the reflectivity of the first alignment portion is greater than the reflectivity of the remaining film layers in the first modification region; the method includes: emitting an optical signal from the side of the substrate where no film layer is provided to the first modification region, and determining the focal depth position of the surface of the first alignment portion close to the substrate according to the reflection signal from the first alignment portion; determining a first laser modification lower limit according to the focal depth position of the surface of the first alignment portion close to the substrate, and the first laser modification lower limit is located within the substrate; using a laser to modify the substrate at the first laser modification lower limit to form a first modification track within the substrate; the first modification track surrounds the display substrate and is located on the side of the first alignment portion close to the display substrate; etching the substrate from the side of the substrate where no film layer is provided to make the substrate form a first opening along the first modification track; removing the display substrate from the display mother board along the first opening.

[0062] The display substrate provided by the embodiments of the present disclosure is provided with a first alignment portion in the first modified area, and the reflectivity of the first alignment portion is greater than that of the remaining film layers in the first modified area, so that the intensity of the reflected signal of the optical signal after irradiating the first alignment portion is greater, forming a sharp contrast with the remaining reflected signals. The accurate focal depth position of the surface of the first alignment portion close to the substrate and the lower limit of the first laser modification can be obtained, improving the accuracy of laser modification, avoiding damage to other film layers of the display substrate, making less structural changes to the display mother board, and having a simple manufacturing process. Moreover, adopting the SLE technology to remove the display substrate from the display mother board is a brand-new processing idea. This method is simple to operate, has higher efficiency, and helps to obtain a display substrate with better structural strength.

[0063] Figure 6 It is a schematic plan view of the display substrate in yet another exemplary embodiment. Figure 6 and Figure 2 The difference lies in that a first alignment portion 30 and a second modified area Bx2 are added, and the remaining content can be referred to the description of Figure 2 and will not be elaborated here.

[0064] As Figure 6 shown, a first alignment portion 30 is provided on the side of the first modified track Px1 away from the peripheral area PA. The first alignment portion 30 can surround the peripheral area PA. The reflectivity of the first alignment portion 30 is greater than that of the remaining film layers in the first modified area Bx1, and can reflect the optical signal from the side of the substrate 101 with higher intensity. The signal receiver can accurately determine the position of the focal depth of the first alignment portion 30 close to the side of the substrate 101 according to the reflected signal from the first alignment portion 30, so as to accurately determine the lower limit o1 of the first laser modification, ensure the accuracy of the laser modification process, and avoid damage to other film layers of the display substrate.

[0065] Figure 7 It is a schematic view of the shape of the first alignment portion in an exemplary embodiment, briefly showing the display area and the peripheral area. In the exemplary embodiment, the first alignment portion 30 can be in a discontinuous linear shape. As Figure 7 shown, the first alignment portion 30 can include a plurality of first sub-alignment portions 31, and the plurality of first sub-alignment portions 31 are isolated from each other and surround the peripheral area PA. Figure 7Taking the example that the first sub-aligning part 31 is rectangular and the shapes of multiple first sub-aligning parts 31 are the same, in other embodiments, the shape of the first sub-aligning part 31 can be triangular, oval, circular, quadrilateral, and polygonal, as well as character shapes such as "T" shape and "cross" shape, or other irregular shapes. The sides of the first sub-aligning part 31 can be straight lines, curves, or wavy shapes, and the corners of the first sub-aligning part 31 can be rounded corners. The shapes of at least two first sub-aligning parts 31 can be set to be different. Multiple first sub-aligning parts 31 can be arranged in multiple circles around the display area AA and the peripheral area PA. The number and distribution of the first sub-aligning parts 31 can be set as needed, and the present disclosure does not limit this.

[0066] In an exemplary embodiment, in the plane of the substrate 101, the width of the first sub-aligning part 31 is the first width S1, and the first width S1 can be the dimension of the first sub-aligning part 31 in the direction away from the display area AA. For example, when the first direction X and the second direction Y are perpendicular to each other, for the first sub-aligning parts 31 located on both sides of the display area AA along the first direction X, the first width S1 can be the maximum dimension of the first sub-aligning part 31 along the first direction X; for the first sub-aligning parts 31 located on both sides of the display area AA along the second direction Y, the first width S1 can be the maximum dimension of the first sub-aligning part 31 along the second direction Y. The larger the first width S1, the larger the size of the first aligning part 30, the more easily the first optical signal L1 irradiates on the first aligning part 30, and the more easily the signal receiver 22 receives the reflected signal from the first aligning part 30, which helps to quickly and accurately determine the lower limit o1 of the first laser modification and accurately form multiple first modification points. In other embodiments, the dimensional relationship of the first width S1 can be set as needed, and the present disclosure does not limit this.

[0067] In an exemplary embodiment, the first width S1 can be greater than or equal to 180 micrometers. For example, the first width S1 can be greater than or equal to 300 micrometers, and the present disclosure does not limit this.

[0068] In an exemplary embodiment, the orthographic projection of the first sub-aligning part 31 on the substrate 101 can be square, and the side length of the square can be approximately 500 micrometers. As Figure 7 shown, in the extending direction of the first aligning part 30, the distance L1 between adjacent first sub-aligning parts 31 can be less than or equal to 3 millimeters, and the distance L1 between adjacent first sub-aligning parts 31 can be the distance between the opposite surfaces of adjacent first sub-aligning parts 31. By setting the area of the orthographic projection of the first sub-aligning part 31 on the substrate 101 to be relatively large and the distance L1 between adjacent first sub-aligning parts 31 to be relatively small, it helps to improve the detection accuracy and continuity of the rangefinder spot and accurately determine the lower limit o1 of the first laser modification.

[0069] In an exemplary embodiment, the first alignment portion 30 is disposed on a side of the first modification path Px1 away from the peripheral region PA. By disposing the first alignment portion 30 on the side of the first modification path Px1 away from the peripheral region PA, after the display substrate is taken out subsequently, the first alignment portion 30 can be removed together without affecting the remaining structures and trace settings on the display substrate. Moreover, when the material of the first alignment portion 30 includes a metal material, by setting the first alignment portion 30 as a discontinuous pattern, the possibility of generating static electricity on the display substrate can be reduced, ensuring the smooth preparation of the display substrate. After the display substrate is removed from the display mother board, the first alignment portion 30 is removed immediately without affecting the display of the subsequent display substrate.

[0070] Figure 8 FIG. is a schematic diagram of the principle of laser focusing on the first modification region by using the first alignment portion in an exemplary embodiment, showing Figure 6 a cross-sectional structure along the BB direction. Figure 8 and Figure 5 is different in that a first alignment portion 30 is disposed on a side of the first modification path Px1 away from the peripheral region PA. The first alignment portion 30 is disposed between the buffer layer 12 and the planarization layer 23. The first modification region Bx1 may include a plurality of first etch stop portions 231. The first etch stop portions 231 may be disposed on the same layer as the planarization layer 23. The orthographic projection of the first etch stop portions 231 on the substrate substrate 101 at least covers the orthographic projection of the first modification path Px1 on the substrate substrate 101. During the subsequent etching process of the substrate substrate 101, the first etch stop portions 231 can block the etchant (such as hydrofluoric acid) to prevent the etchant from spreading to other positions of the display substrate. As can be seen from Figure 8 when the first optical signal L1 irradiates the surface of the first alignment portion 30, a fifth reflection signal L5 is formed. Since the reflectivities of the substrate substrate 101, the buffer layer 12, and the first etch stop portions 231 are relatively low, the signal attenuation of the first optical signal L1 passing through the substrate substrate 101 and the buffer layer 12 is small. However, the first alignment portion 30 has a high reflectivity to light, and almost all the light is reflected after irradiating the surface of the first alignment portion 30. The intensity of the fifth reflection signal L5 is significantly greater than that of the other reflection signals, and the signal receiver can easily distinguish the fifth reflection signal L5. The detector can obtain the accurate focal depth position of the surface of the first alignment portion 30 close to the substrate substrate 101. As shown in Figure 8 after obtaining the accurate focal depth position, the accurate position of the first laser modification lower limit o1 can be obtained, and when forming a plurality of first modification points by laser modification, the influence on other film layers of the display substrate can be avoided, which helps to ensure the yield and display quality of the display substrate. In Figure 8Among them, the first thickness H0 is the initial thickness of the substrate 101 before etching, and the first thickness H0 is the dimension in the direction perpendicular to the substrate 101.

[0071] In an exemplary embodiment, by arranging the first alignment portion 30 to surround the peripheral area PA, no matter from which direction the first optical signal L1 irradiates near the first modified track Px1, it can be reflected by the plurality of first sub-alignment portions 31, which improves the significance of the first alignment portion 30 as a mark. By arranging the plurality of first sub-alignment portions 31 to be isolated from each other, the first optical signal L1 can irradiate the first sub-alignment portion 31 and the first etching stopper 231 at the same time. Since the reflection signal intensities of the first sub-alignment portion 31 and the first etching stopper 231 are quite different, it is more convenient for the signal receiver 22 to distinguish the received reflection signals.

[0072] In an exemplary embodiment, the first alignment portion 30 can be arranged on the same layer as the first gate metal layer, which helps to save the manufacturing steps. The statement "A and B are arranged on the same layer" in the present disclosure means that when manufacturing the display substrate, A and B are formed simultaneously through the same patterning process.

[0073] In an exemplary embodiment, the material of the first alignment portion 30 can include metal materials such as molybdenum (Mo), aluminum (Al), titanium (Ti), silver (Ag), etc. and their alloys. Alternatively, the first alignment portion 30 can adopt other materials with higher reflectivity. The material of the first alignment portion 30 can be set as needed, and the present disclosure does not limit this.

[0074] Figure 9 In an exemplary embodiment Figure 7 The cross-sectional view along the EE direction in shows the structure of the substrate after etching. As Figure 9 shown, after forming the first modified track Px1, the substrate 101 can be etched from the side of the substrate 101 facing away from the first etching stopper 231. Since the etching rate of the substrate 101 at the first modified track Px1 is greater than that at other positions, after the substrate 101 is etched from the first thickness H0 to the second thickness H1, the substrate 101 at the first modified track Px1 is etched through, forming a first opening X1 surrounding the peripheral area PA. The morphology of the first opening X1 is similar to that of the first modified track Px1 and presents an arc shape in the plane perpendicular to the substrate 101. Subsequently, the display substrate can be removed from the display mother board along the first opening X1, and the morphology at the first opening X1 is the edge morphology of the display substrate. An ideal morphology of the edge of the display substrate can be obtained through the morphology of the first modified track Px1 and the control of the etching process. In Figure 9Among them, the second thickness H1 is the thickness of the substrate 101 after etching, and the second thickness H1 is the dimension in the direction perpendicular to the substrate 101.

[0075] In an exemplary embodiment, the first thickness H0 can be approximately 500 millimeters, and the second thickness H1 can be approximately 200 millimeters. The present disclosure places no limitation thereon.

[0076] In an exemplary embodiment, as Figure 9 shown, the first modified region Bx further includes a first sacrificial portion 33. The first sacrificial portion 33 is located on the side of the first etching stopper 231 close to the substrate 101. The orthographic projection of the first sacrificial portion 33 on the substrate 101 at least covers the orthographic projection of the first modified track Px1 on the substrate 101. The laser absorption rate of the first sacrificial portion 33 is greater than that of other film layers such as the substrate 101, the buffer layer 12, and the first etching stopper 231, and it will not fall off or undergo large deformation after absorbing the heat of the laser. During the laser modification process, the first sacrificial portion 33 can absorb the heat from the laser, thereby preventing the laser from damaging the first etching stopper 231, which helps to improve the yield of the display substrate.

[0077] In an exemplary embodiment, as Figure 6 shown, the display substrate may further include a second modified region Bx2. The display area AA can at least partially surround the second modified region Bx2. For example, the second modified region Bx2 can be located within the display area AA. A second modified track Px2 can be formed in the second modified region Bx2 by laser modification. The second modified track Px2 can be, for example, in a closed shape. Subsequently, modification can be performed along the second modified track Px2. After steps such as etching, the film layer within the range of the second modified track Px2 can be removed by laser, and a first opening is formed on the display substrate. The shape of the first opening can be similar to the shape of the second modified track Px2. In an exemplary embodiment, the position of the first opening can correspond to the position of the optical device, and the first opening is configured to accommodate the optical device. By disposing the optical device within the first opening, it helps to achieve a "full-screen" display of the display substrate, improving the aesthetic degree and user experience of the display substrate. Compared with the process of directly opening TGV holes in the glass, the SLE technology can obtain an ideal edge shape of the first opening by controlling the shape of the second modified track, which helps to ensure the strength of the display substrate near the first opening and can also achieve a customized morphology of the first opening. The position distribution of multiple second modification points can be designed as needed, and appropriate DOE can be used for modification to make the edge of the first opening have a customized morphology.

[0078] In an exemplary embodiment, the position of the second modified area Bx2 in the display area AA is not limited. It can be located in the upper or lower part of the display area AA along the second direction Y, or can be located at the edge position of the display area AA. In an exemplary embodiment, in a plane parallel to the display substrate, the shape of the first opening can be any one or more of the following: square, rectangle, polygon, circle, ellipse, etc. The optical device can be an optical sensor such as a fingerprint recognition device, a camera device, or 3D imaging. The shape and size of the first opening can be set as needed, and the present disclosure does not limit this here.

[0079] In an exemplary embodiment, during the laser modulation process of the second modified area Bx2, there is also a problem that the reflection signal is not obvious and it is not easy to determine the focal depth. Therefore, a second alignment part can be provided on the side of the second modified track Px2 away from the peripheral area PA. The reflectivity of the second alignment part is greater than the reflectivity of other film layers in the second modified track Px2. The function of the second alignment part is similar to that of the first alignment part, and will not be elaborated here.

[0080] Figure 10 In an exemplary embodiment Figure 6 The top view of the dashed area C in the figure schematically shows the structures of the second modified area Bx2, the second modified track Px2, and the second alignment part 40. As Figure 10 shown, the second modified track Px2 can be in an annular shape, and a second alignment part 40 is provided on the side of the second modified track Px2 away from the peripheral area PA. The second alignment part 40 can be in a "cross" shape and can be located at the geometric center of the second modified track Px2. Since the size of the first opening on the display substrate is generally small, by providing the second alignment part 40 at the center of the ring of the second modified track Px2, no matter from which direction the first optical signal L1 irradiates near the second modified track Px2, it can be reflected by the second alignment part 40, and the difference in the reflection signal intensity between the second alignment part 40 and other film layers is relatively large, which is convenient for the signal receiver to distinguish the received reflection signals, so as to accurately determine the focal depth. By providing the second alignment part 40 on the side of the second modified track Px2 away from the peripheral area PA, after the subsequent processing is completed, the second alignment part 40 can be removed together, which will not affect the remaining structures and wiring settings on the display substrate, and helps to prevent static electricity from being generated near the second alignment part 40 and affecting the display substrate.

[0081] In an exemplary embodiment, in the plane of the substrate 101, the dimension of the second alignment part 40 along the first direction X can be the second width S2, and the second width S2 can be about 500 microns. The dimension of the second alignment part 40 along the first direction X can be the maximum dimension of the second alignment part 40 along the first direction X. The dimension of the second alignment part 40 along the second direction Y can be equal to the dimension of the second alignment part 40 along the first direction X, and will not be elaborated here.

[0082] In an exemplary embodiment, in the plane of the substrate 101, the width of the second modified region Bx2 is the third width S3. The third width S3 may be the dimension of the second modified region Bx2 in a direction away from its geometric center. When the second modified region Bx2 is in the shape of a ring, the third width S3 may be the radial width of the ring.

[0083] Figure 11 In yet another exemplary embodiment Figure 6 is a top view of the dashed region C in Figure 11 and Figure 10 The difference lies in the different shape of the second alignment portion 40, and the rest can be referred to the foregoing description of Figure 10 which will not be elaborated here.

[0084] As Figure 11 shown, the second alignment portion 40 may include a plurality of second sub - alignment portions 41. The plurality of second sub - alignment portions 41 may be arranged in a ring shape with gaps, and may be concentric with the ring of the second modified track Px2. By setting the second alignment portion 40 to also be in a ring shape, the shape of the second alignment portion 40 is similar to that of the second modified track Px2. No matter from which direction the first optical signal L1 irradiates near the second modified track Px2, it can be reflected by the plurality of second sub - alignment portions 41. By setting the plurality of second sub - alignment portions 41 to be isolated from each other, the first optical signal L1 can irradiate the second sub - alignment portions 41 and other film layers simultaneously. Since the reflection signal intensities of the second sub - alignment portions 41 and other film layers are quite different, it is convenient for the signal receiver to distinguish the received reflection signals. The shape surrounded by the plurality of second sub - alignment portions 41 can be set according to the shape of the second modified track Px2. For example, when the second modified track Px2 is rectangular, the plurality of second sub - alignment portions 41 can enclose a rectangle with gaps. The present disclosure does not limit this.

[0085] In an exemplary embodiment, the second alignment portion 40 may include four second sub - alignment portions 41, and each of the second sub - alignment portions 41 is in an arc shape. The four second sub - alignment portions 41 may form a ring with four gaps. In other embodiments, the second alignment portion 40 may include a larger number of second sub - alignment portions 41, and there may be a larger number of gaps between the plurality of second sub - alignment portions 41. The second sub - alignment portions 41 may also form other shapes. The shape, material, etc. of the second sub - alignment portions 41 can be referred to the foregoing description of the first sub - alignment portion 31. The present disclosure does not limit this.

[0086] In an exemplary embodiment, within the plane of the base substrate 101, the width of the second sub-alignment portion 41 is a fourth width S4, and the fourth width S4 may be the size of the second sub-alignment portion 41 in a direction away from the display area AA. For example, the fourth width S4 may be the size of the second sub-alignment portion 41 in a direction away from the geometric center of the second reformed area Bx2, and the fourth width S4 may be greater than or equal to the third width S3. By setting the fourth width S4 to be greater than or equal to the third width S3, the size of the second alignment portion 40 is greater than or equal to the size of the second reformed area Bx2, the first light signal L1 is more easily irradiated onto the second alignment portion 40, and the signal receiver 22 is more easily received by the reflected signal from the second alignment portion 40. In other embodiments, the size relationship between the third width S3 and the fourth width S4 may be set as needed, and the present disclosure is not limited thereto.

[0087] In an exemplary embodiment, the third width S3 may be greater than or equal to 180 microns and less than or equal to 220 microns, and the fourth width S4 may be greater than or equal to 180 microns and less than or equal to 220 microns. For example, the third width S3 and the fourth width S4 may be approximately 200 microns, which is not limited in the present disclosure.

[0088] Figure 12 In an exemplary embodiment Figure 10 The cross-sectional view along the EE direction illustrates the film structure of the display substrate in the second reforming area Bx2, and omits illustrating the remaining structure of the display substrate. Figure 12 As shown, in the second reformed area Bx2, the display substrate includes a base substrate 101, a buffer layer 12, a second alignment portion 40, a second etch stop portion 232, a light emitting structure layer 103 and a top protective film (TPF) 501 arranged in sequence, and the orthographic projection of the second etch stop portion 232 on the base substrate 101 can cover the orthographic projection of the second reformed lane Px2 on the base substrate 101. The second reformed lane Px2 may include a plurality of discrete second reformed points, and the positions, arrangements and formation processes of the plurality of second reformed points on the base substrate 101 may refer to the aforementioned description of the first reformed points, which will not be repeated here.

[0089] In an exemplary embodiment, the display substrate may further include a second source-drain metal layer (not shown), a second passivation layer (not shown), and a second planar layer (not shown) disposed on the side of the planar layer 23 away from the base substrate 101, and the light emitting structure layer 103 may be connected to the corresponding transistor through the second source-drain metal layer. Figure 12As shown, the second etch stopper 232 may include a first dam base 410, and at least one of a second dam base 420 and a third dam base 430, wherein the first dam base 410 may be disposed in the same layer as the planar layer 23, the second dam base 420 may be disposed in the same layer as the second planar layer, and the third dam base 430 may be disposed in the same layer as the pixel definition layer 304. In other embodiments, the second etch stopper 232 may further include a fourth dam base (not shown) disposed on a side of the third dam base 430 away from the base substrate 101, and the fourth dam base may be disposed in the same layer as the isolation column 305. In an exemplary embodiment, the orthographic projection areas of the first dam base 410, the second dam base 420, the third dam base 430, and the fourth dam base on the base substrate 101 may increase or decrease in sequence, and the number of film layers included in the second etch stopper 232 and the overlapping relationship may be set as needed, which is not limited by the present disclosure.

[0090] In an exemplary embodiment, if Figure 12 As shown, the orthographic projection of the second alignment portion 40 on the base substrate 101 may be located within the range of the orthographic projection of at least one of the first dam base 410 , the second dam base 420 , the third dam base 430 and the fourth dam base on the base substrate 101 .

[0091] Figure 13 In an exemplary embodiment, Figure 12 A cross-sectional view of the substrate after etching, showing Figure 10 The cross-sectional structure along the EE direction. Figure 13 As shown, after forming the second reformed lane Px2, the substrate substrate 101 can be etched from the side of the substrate substrate 101 away from the second etch stopper 232, and the substrate substrate 101 is etched through at the second reformed lane Px2 to form a ring-shaped second opening X2. After forming the first reformed lane Px1 and the second reformed lane Px2, the substrate substrate 101 can be etched to form the first opening X1 and the second opening X2 at the same time. The process of forming the second opening X2 can refer to the aforementioned description of the process of forming the first opening X1, and will not be repeated here.

[0092] Figure 14 In an exemplary embodiment, Figure 12 A cross-sectional view of a substrate after forming a first opening, showing Figure 10 In an exemplary embodiment, after forming the second opening X2, the display substrate can be irradiated with laser in a direction perpendicular to the base substrate 101 to remove the film layer within the second opening X2, thereby forming a display substrate as shown in FIG. Figure 14 The first opening DA is shown. In other embodiments, other film layers within the second opening X2 may be removed in other ways, and the present disclosure does not limit this.

[0093] Figure 15 In yet another exemplary embodiment Figure 10 A cross-sectional view along the EE direction Figure 15 differs from that of Figure 12 in that a sacrificial part 43 is added. For the rest, reference can be made to the foregoing description of Figure 12 and will not be elaborated here.

[0094] As Figure 15 shown, a second sacrificial part 43 can be provided on the side of the buffer layer 12 close to the flat layer 23. The orthographic projection of the second sacrificial part 43 on the substrate 101 can cover the orthographic projection of the second modified track Px2 on the substrate 101. For the effect of the second sacrificial part 43, reference can be made to the foregoing description of the first sacrificial part 33 and will not be elaborated here.

[0095] In the exemplary embodiment, the laser for laser modification can be an infrared laser, and the present disclosure does not limit this.

[0096] The embodiments of the present disclosure provide a display substrate, which is obtained by using the selective laser etching method of the display mother board as described above.

[0097] The embodiments of the present disclosure further provide a display device, including a display substrate obtained by using the selective laser etching method of the display mother board described in any of the foregoing embodiments. The display device can be: an OLED display, a QLED display, a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, or any product or component with a display function. The embodiments of the present disclosure are not limited thereto.

[0098] Although the embodiments of the present disclosure have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present disclosure. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present disclosure.

Claims

1. A selective laser etching method for a display motherboard, characterized in that The display motherboard includes a plurality of display substrates, and a first modified area surrounding the display substrates. The first modified area includes a first alignment portion surrounding the display substrates; the reflectivity of the first alignment portion is greater than the reflectivity of the remaining film layers in the first modified area; the method includes: Emitting an optical signal from the side of the substrate substrate without a film layer to the first modified area, and determining the focal depth position of the surface of the first alignment portion close to the substrate substrate according to the reflection signal from the first alignment portion; Determining a first laser modification lower limit according to the focal depth position of the surface of the first alignment portion close to the substrate substrate, and the first laser modification lower limit is located in the substrate substrate; Using a laser to modify the substrate substrate at the first laser modification lower limit to form a first modified track in the substrate substrate; the first modified track surrounds the display substrate and is located on the side of the first alignment portion close to the display substrate; Etching the substrate substrate from the side of the substrate substrate without a film layer, so that the substrate substrate forms a first opening along the first modified track; Removing the display substrate from the display motherboard along the first opening.

2. The selective laser etching method for a display mother board according to claim 1, characterized in that, The first alignment portion includes a plurality of first sub-alignment portions, and the plurality of first sub-alignment portions are isolated from each other; determining the focal depth position of the surface of the first alignment portion close to the substrate substrate according to the reflection signal from the first alignment portion includes: Determining the focal depth position of the surface of the first sub-alignment portion close to the substrate substrate according to the reflection signal from the first sub-alignment portion.

3. The selective laser etching method of the display mother board according to claim 2, wherein In a plane perpendicular to the substrate substrate, the first modified track includes a plurality of first modified points distributed at intervals; The using a laser to modify the substrate substrate at the first laser modification lower limit to form a first modified track in the substrate substrate includes: Using the laser to form the plurality of first modified points at the first laser modification lower limit on the substrate substrate and at a plurality of preset points located away from the first alignment portion at the first laser modification lower limit.

4. The selective laser etching method of a display mother board according to claim 3, wherein During the process of forming the plurality of first modified points by using the laser, making the plurality of first modified points form an arc shape bent away from the display substrate in a plane perpendicular to the substrate substrate.

5. The selective laser etching method for a display mother board according to claim 3, characterized in that, In a direction perpendicular to the substrate substrate, the first modified area includes the substrate substrate, the first alignment portion and a first etching blocking portion arranged in sequence. The orthographic projection of the first etching blocking portion on the substrate substrate at least covers the orthographic projection of the first modified track on the substrate substrate.

6. The selective laser etching method for a display mother board according to claim 5, wherein In a direction perpendicular to the substrate substrate, the first modified area further includes a first sacrificial portion, and the first sacrificial portion is located on the side of the first etching blocking portion close to the substrate substrate; the orthographic projection of the first sacrificial portion on the substrate substrate at least covers the orthographic projection of the first modified track on the substrate substrate; the absorption rate of the first sacrificial portion to the laser is greater than the absorption rate of the remaining film layers in the first modified area to the laser.

7. The selective laser etching method of a display mother board according to claim 1, wherein The display substrate includes a display area, a peripheral area surrounding the display area, and a second modified area, and at least part of the display area surrounds the second modified area; a second alignment portion is provided in the second modified area, and the reflectivity of the second alignment portion is greater than the reflectivity of the remaining film layers in the second modified area; before etching the substrate, the method further includes: Emitting an optical signal from a side of the substrate where no film layer is provided to the second modified area, and determining the focal depth position of the surface of the second alignment portion close to the substrate according to the reflected signal from the second alignment portion; Determining a second laser modification lower limit according to the focal depth position of the surface of the second alignment portion close to the substrate, and the second laser modification lower limit is located in the substrate; Modifying the substrate with a laser at the second laser modification lower limit to form a second modified track in the substrate; the second modified track has a closed shape surrounding the second alignment portion.

8. The selective laser etching method of a display mother board according to claim 7, characterized in that Etching the substrate from a side of the substrate where no film layer is provided further includes: Forming a second opening in the substrate along the second modified track; Removing the film layer of the display substrate within the range of the second opening to form a first opening.

9. The selective laser etching method of a display mother board according to claim 7, wherein In the plane of the substrate, the second alignment portion is located at the geometric center of the second modified track.

10. The selective laser etching method of a display motherboard according to claim 7, characterized in that, The second alignment portion includes at least two second sub-alignment portions, and at least two of the second sub-alignment portions are isolated from each other.

11. The selective laser etching method of a display mother board according to claim 10, wherein In a direction away from the geometric center of the second modified track, the size of the second sub-alignment portion is greater than the size of the second modified area.

12. The selective laser etching method of the display mother board according to claim 7, characterized in that, In a direction perpendicular to the substrate, the second modified area includes the substrate, the second alignment portion, a second etching barrier portion, a light-emitting structure layer, and an upper protective film arranged in sequence, and the orthographic projection of the second etching barrier portion on the substrate at least covers the orthographic projection of the second modified track on the substrate.

13. The selective laser etching method for a display mother board according to claim 12, wherein In a direction perpendicular to the substrate, the second modified area further includes a second sacrificial portion, and the second sacrificial portion is located on a side of the second etching barrier portion close to the substrate; the orthographic projection of the second sacrificial portion on the substrate at least covers the orthographic projection of the second modified track on the substrate; the absorption rate of the second sacrificial portion to the laser is greater than the absorption rate of the remaining film layers in the second modified area to the laser.

14. A display substrate, characterized in that, The display substrate is obtained by the selective laser etching method of the display mother board according to any one of claims 1-13.

15. A display device, characterized in that, Including the display substrate according to claim 14.

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