Light emitting device

Abstract

Provided is a light emitting device which can be used in a high-definition, high-efficiency, and high-reliability display device. The light-emitting device is manufactured through a photoetching method and comprises a first electrode, a second electrode and a first layer located between the first electrode and the second electrode, the first layer comprises a light-emitting layer and an electron injection layer, the electron injection layer is a mixed layer containing a first organic compound and a second organic compound, the first organic compound has strong basicity, and the second organic compound has strong basicity. The second organic compound has an electron-transporting property, and the LUMO level of the first organic compound is higher than the LUMO level of the second organic compound.

Description

Technical Field

[0001] One aspect of the present invention relates to an organic compound, a light-emitting device, a light-emitting apparatus, a light-receiving apparatus, a display device, an electronic device, a lighting device, and an electronic component. Note that one aspect of the present invention is not limited to the above technical field. One aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. One aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Thus, more specifically, as an example of the technical field of one aspect of the present invention disclosed in this specification, a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a storage device, an imaging device, a driving method of these devices, or a manufacturing method of these devices can be cited. Background Art

[0002] The practical application of a light-emitting device (organic EL device) using an organic compound and utilizing electroluminescence (EL) has been very active. In the basic structure of these light-emitting devices, an organic compound layer (EL layer) containing a light-emitting material is sandwiched between a pair of electrodes. By applying a voltage to this element, carriers are injected, and light emission from the light-emitting material can be obtained using the recombination energy of the carriers.

[0003] Since such a light-emitting device is a self-luminous type light-emitting device, when used for pixels of a display, it has advantages such as higher visibility and no need for a backlight compared to liquid crystals. Therefore, this light-emitting device is suitable for flat panel display elements. In addition, a display using such a light-emitting device can be manufactured to be thin and light, which is also a great advantage. Moreover, a very fast response speed is also one of its characteristics.

[0004] In addition, since the light-emitting layer of such a light-emitting device can be formed continuously in two dimensions, surface light emission can be obtained. Since this characteristic is difficult to obtain in a point light source typified by an incandescent lamp or an LED or a line light source typified by a fluorescent lamp, it also has high utility value as a surface light source applicable to lighting and the like.

[0005] As described above, a display or a lighting device using a light-emitting device is suitable for various electronic devices, and research and development of light-emitting devices with better characteristics are increasingly active.

[0006] As a method for manufacturing a light-emitting device, various methods are known. As one of the methods for forming a high-definition light-emitting device, a method of forming a light-emitting layer without using a fine metal mask is known. As an example thereof, there is a method for manufacturing an organic EL display, including: a step of depositing a first light-emitting organic material containing a mixture of a host material and a dopant material over an electrode array including first and second pixel electrodes formed over an insulating substrate to form a first light-emitting layer as a continuous film provided over the entire display region including the electrode array; a step of irradiating ultraviolet light not to a portion of the first light-emitting layer located above the first pixel electrode but to a portion of the first light-emitting layer located above the second pixel electrode; a step of depositing a second light-emitting organic material containing a mixture of a host material and a dopant material and different from the first light-emitting organic material over the first light-emitting layer to form a second light-emitting layer as a continuous film provided over the entire display region; and a step of forming a counter electrode over the second light-emitting layer (Patent Document 1).

[0007] In addition, as one type of organic EL device, Non-Patent Document 1 discloses a method for manufacturing an organic optoelectronic device using a standard UV lithography method (Non-Patent Document 1). [Prior Art Documents] [Patent Documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-160473 [Non-Patent Documents]

[0009] [Non-Patent Document 1] B. Lamprecht et al., “Organic optoelectronic device fabrication using standard UV photolithography” phys.stat.sol.(RRL) 2, No. 1, p. 16-18 (2008) Summary of the Invention Technical Problem to be Solved by the Invention

[0010] Generally, in an electron injection layer of a light-emitting device, an alkali metal such as lithium (Li) having a small work function or a compound of the alkali metal is used. And, by using the above alkali metal or its compound, good electron injection property can be ensured. In addition, due to the interaction between the above alkali metal or its compound and an electron transporting material, charge injection ability can be ensured and electrons can be injected into the electron transport layer. Therefore, by using the above alkali metal or its compound for the electron injection layer, low voltage of the device can be achieved.

[0011] However, the above-mentioned alkali metal or its compound is a material that is easily oxidized and unstable. Therefore, there are the following problems: If it reacts with atmospheric components such as water or oxygen during the manufacturing process of the light-emitting device, it will cause a significant increase in the driving voltage of the light-emitting device or a significant decrease in the luminous efficiency. Therefore, the organic EL device needs to be manufactured in an atmosphere of vacuum or an inert gas such as nitrogen.

[0012] In recent years, as one of the methods for forming an organic compound layer into a specified shape, a vacuum evaporation method (mask evaporation) using a metal mask has been widely adopted. However, with the progress of high density and high fineness, due to various reasons typified by the problems of positional alignment accuracy and the arrangement interval with the substrate, the further high fineness of mask evaporation is approaching its limit. On the other hand, by processing the shape of the organic compound film using photolithography, a denser pattern can be formed. In this method, since it is also easy to achieve large area, research on the processing of the organic compound film using photolithography has been carried out.

[0013] For example, a light-emitting device according to one embodiment of the present invention can also be manufactured using a lithographic technique such as photolithography. When manufacturing using photolithography, at least the second light-emitting layer and the organic compound layer closer to the first electrode side than the second light-emitting layer are processed simultaneously, so that they have a shape in which their ends are substantially aligned in the vertical direction.

[0014] In addition, when manufacturing a light-emitting device using photolithography, in the case where the electron injection layer is exposed to the atmosphere, a resist resin, water, or a chemical solution during the processing step, in a device in which the electron injection layer contains an alkali metal or a compound of the alkali metal, the electron injection layer deteriorates due to this step, resulting in a significant decrease in characteristics. That is, since the layer of the alkali metal or the compound of the alkali metal in the electron injection layer is exposed to the photolithography process, a significant increase in the driving voltage and a significant decrease in the luminous efficiency occur.

[0015] One of the objects of one embodiment of the present invention is to provide a semiconductor device with a high degree of design freedom. Another object of one embodiment of the present invention is to provide a light-emitting device with a high degree of design freedom in the manufacturing process. Another object of another embodiment of the present invention is to provide a light-emitting device with high reliability. One of the objects of one embodiment of the present invention is to provide a light-emitting device, a light-emitting device, an electronic device, a display device, and an electronic device with low power consumption. One of the objects of one embodiment of the present invention is to provide a light-emitting device, a light-emitting device, an electronic device, a display device, and an electronic device with low power consumption and high reliability.

[0016] Note that the description of these objects does not preclude the existence of other objects. Note that one embodiment of the present invention does not need to achieve all of the above objects. In addition, there are clearly objects other than the above objects in the descriptions of the specification, the drawings, the claims, etc., and objects other than the above objects can be obtained from the descriptions of the specification, the drawings, the claims, etc. Means for solving technical problems

[0017] One embodiment of the present invention is a light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface. The group of light-emitting devices includes a first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices, a second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices, and a first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices. The light-emitting device includes a first electrode that is one of the first electrode group, the second electrode, and a first layer that is one of the first layer group. The second electrode and the first layer overlap the first electrode. The first layer includes a light-emitting layer and an electron injection layer. The electron injection layer is a mixed layer containing a first organic compound and a second organic compound. The first organic compound has strong basicity, the second organic compound has electron-transporting properties, the LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, and the interval between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

[0018] In addition, another embodiment of the present invention is a light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface. The group of light-emitting devices includes a first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices, a second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices, and a first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices. The light-emitting device includes a first electrode that is one of the first electrode group, the second electrode, and a first layer that is one of the first layer group. The second electrode and the first layer overlap the first electrode. The first layer includes a light-emitting layer and an electron injection layer. The electron injection layer is a mixed layer containing a first organic compound and a second organic compound. The first organic compound has strong basicity with an acidity coefficient pKa of 8 or more, the second organic compound has electron-transporting properties, the LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, and the interval between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

[0019] In addition, another aspect of the present invention is a light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface. The group of light-emitting devices includes a first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices, a second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices, and a first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices. The light-emitting device includes a first electrode that is one of the first electrode group, the second electrode, and a first layer that is one of the first layer group. The second electrode and the first layer overlap the first electrode. The first layer includes a light-emitting layer and an electron injection layer. The electron injection layer is a mixed layer containing a first organic compound and a second organic compound. The first organic compound has strong basicity, the second organic compound has electron-transporting properties, the LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, and the HOMO energy level of the first organic compound is higher than the HOMO energy level of the second organic compound. The interval between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

[0020] In addition, another aspect of the present invention is a light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface. The group of light-emitting devices includes a first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices, a second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices, and a first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices. The light-emitting device includes a first electrode that is one of the first electrode group, the second electrode, and a first layer that is one of the first layer group. The second electrode and the first layer overlap the first electrode. The first layer includes a light-emitting layer and an electron injection layer. The electron injection layer is a mixed layer containing a first organic compound and a second organic compound. The first organic compound has strong basicity with an acidity coefficient pKa of 8 or more, the second organic compound has electron-transporting properties, the LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, and the HOMO energy level of the first organic compound is higher than the HOMO energy level of the second organic compound. The interval between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

[0021] In addition, another aspect of the present invention is a light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface. The group of light-emitting devices includes a first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices, a second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices, a first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices, and a second layer located between the first layer group and the second electrode and being a continuous layer shared by the plurality of light-emitting devices. The light-emitting device includes a first electrode that is one of the first electrode group, the second electrode, a first layer that is one of the first layer group, and the second layer. The second electrode, the second layer, and the first layer overlap with the first electrode. The first layer includes a light-emitting layer, and the second layer includes an electron injection layer. The electron injection layer is a mixed layer containing a first organic compound and a second organic compound. The first organic compound has strong basicity, the second organic compound has electron-transporting properties, the LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, and the distance between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

[0022] In addition, another aspect of the present invention is a light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface. The group of light-emitting devices includes a first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices, a second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices, a first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices, and a second layer located between the first layer group and the second electrode and being a continuous layer shared by the plurality of light-emitting devices. The light-emitting device includes a first electrode that is one of the first electrode group, the second electrode, a first layer that is one of the first layer group, and the second layer. The second electrode, the second layer, and the first layer overlap with the first electrode. The first layer includes a light-emitting layer, and the second layer includes an electron injection layer. The electron injection layer is a mixed layer containing a first organic compound and a second organic compound. The first organic compound has strong basicity with an acidity coefficient pKa of 8 or more, the second organic compound has electron-transporting properties, the LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, and the distance between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

[0023] In addition, another aspect of the present invention is a light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface. The group of light-emitting devices includes a first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices, a second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices, a first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices, and a second layer located between the first layer group and the second electrode and being a continuous layer shared by the plurality of light-emitting devices. The light-emitting device includes a first electrode that is one of the first electrode group, the second electrode, a first layer that is one of the first layer group, and the second layer. The second electrode, the second layer, and the first layer overlap with the first electrode. The first layer includes a light-emitting layer, and the second layer includes an electron injection layer. The electron injection layer is a mixed layer containing a first organic compound and a second organic compound. The first organic compound has strong basicity, and the second organic compound has electron transport properties. The LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, and the HOMO energy level of the first organic compound is higher than the HOMO energy level of the second organic compound. The interval between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

[0024] In addition, another aspect of the present invention is a light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface. The group of light-emitting devices includes a first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices, a second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices, a first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices, and a second layer located between the first layer group and the second electrode and being a continuous layer shared by the plurality of light-emitting devices. The light-emitting device includes a first electrode that is one of the first electrode group, the second electrode, a first layer that is one of the first layer group, and the second layer. The second electrode, the second layer, and the first layer overlap with the first electrode. The first layer includes a light-emitting layer, and the second layer includes an electron injection layer. The electron injection layer is a mixed layer containing a first organic compound and a second organic compound. The first organic compound has a strong basicity with an acidity coefficient pKa of 8 or more, and the second organic compound has electron transport properties. The LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, and the HOMO energy level of the first organic compound is higher than the HOMO energy level of the second organic compound. The interval between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

[0025] In addition, another aspect of the present invention is a light-emitting device having the above structure, wherein the first layer further includes an intermediate layer and a second light-emitting layer. The second light-emitting layer is located between the intermediate layer and the first electrode. The intermediate layer includes a mixed layer containing a third organic compound and a fourth organic compound. The third organic compound has strong basicity, and the fourth organic compound has electron transport properties. The LUMO energy level of the third organic compound is higher than the LUMO energy level of the fourth organic compound.

[0026] In addition, another aspect of the present invention is a light-emitting device having the above structure, wherein the first layer further includes an intermediate layer, a second light-emitting layer, and a second electron transport layer. The second light-emitting layer is located between the intermediate layer and the first electrode, and the second electron transport layer is located between the second light-emitting layer and the intermediate layer. The intermediate layer includes a mixed layer containing a third organic compound and a fourth organic compound. The third organic compound has strong basicity, and the fourth organic compound has electron transport properties. The LUMO energy level of the third organic compound is higher than the LUMO energy level of the fourth organic compound.

[0027] In addition, another structure of the present invention is a light-emitting device having the above structure, wherein the intermediate layer includes a P-type layer, and the P-type layer is located between the mixed layer containing the third organic compound and the fourth organic compound and the light-emitting layer.

[0028] In addition, another aspect of the present invention is a light-emitting device having the above structure, wherein the LUMO energy level of the first organic compound is higher than that of the second organic compound by more than 0.05 eV.

[0029] In addition, another aspect of the present invention is a light-emitting device having the above structure, wherein the LUMO energy level of the first organic compound is higher than that of the second organic compound by more than 0.05 eV, and the HOMO energy level of the first organic compound is higher than that of the second organic compound by more than 0.05 eV.

[0030] In addition, another aspect of the present invention is a light-emitting device having the above structure, wherein the LUMO energy level of the first organic compound is -2.50 eV or higher and -1.00 eV or lower.

[0031] In addition, another aspect of the present invention is a light-emitting device having the above structure, wherein the LUMO energy level of the first organic compound is -2.50 eV or higher and -1.00 or lower, and the HOMO energy level of the first organic compound is -5.7 eV or higher and -4.8 eV or lower.

[0032] In addition, another aspect of the present invention is a light-emitting device having the above structure, wherein the LUMO energy level of the first organic compound is -2.50 eV or higher and -1.00 or lower, and the LUMO energy level of the second organic compound is -3.25 eV or higher and -2.50 eV or lower.

[0033] In addition, another aspect of the present invention is a light-emitting device having the above structure, wherein the LUMO energy level of the first organic compound is -2.50 eV or higher and -1.00 or lower, the LUMO energy level of the second organic compound is -3.25 eV or higher and -2.50 eV or lower, the HOMO energy level of the first organic compound is -5.7 eV or higher and -4.8 eV or lower, and the HOMO energy level of the second organic compound is -6.5 eV or higher and -5.7 or lower.

[0034] In addition, another aspect of the present invention is a light-emitting device having the above structure, wherein the second organic compound is a material having an acid dissociation constant pKa of 4 or higher and 8 or lower.

[0035] In addition, another aspect of the present invention is a light-emitting device having the above structure, wherein the first organic compound does not have an electron-donating property to the second organic compound.

[0036] In addition, another aspect of the present invention is a light-emitting device having the above structure, wherein the spin density of the mixed layer containing the first organic compound and the second organic compound measured by electron spin resonance method is 1×10 17 spins / cm 3 Hereinafter, preferably less than 1×10 16 spins / cm 3 . Advantages of the Invention

[0037] According to one aspect of the present invention, a novel light-emitting device can be provided. In addition, according to another aspect of the present invention, a novel light-emitting device can be provided. In addition, according to one aspect of the present invention, a novel light-emitting device with good reliability can be provided. In addition, according to another aspect of the present invention, a novel light-emitting device with good reliability and efficiency can be provided.

[0038] In addition, according to one aspect of the present invention, a semiconductor device with a high degree of design freedom can be provided. Further, according to one aspect of the present invention, a light-emitting device with a high degree of design freedom in the manufacturing process can be provided. Further, according to another aspect of the present invention, a high-definition light-emitting device can be provided. Further, according to another aspect of the present invention, a highly reliable light-emitting device can be provided. Further, according to one aspect of the present invention, a light-emitting device, a light-emitting device, an electronic device, a display device, and an electronic device with low power consumption can be provided. Further, according to one aspect of the present invention, a light-emitting device, a light-emitting device, an electronic device, a display device, an electronic device, and a lighting device with low power consumption and high reliability can be provided.

[0039] Note that the description of these effects does not preclude the existence of other effects. Note that one aspect of the present invention does not necessarily have all of the above effects. Note that effects other than the above can be known and extracted from the descriptions in the specification, drawings, claims, etc. Brief Description of the Drawings

[0040] Figure 1A and Figure 1B are diagrams showing a light-emitting device. Figure 2A and Figure 2B are a top view and a cross-sectional view of a light-emitting device. Figures 3A to 3D are diagrams showing a light-emitting device. Figures 4A to 4E is a cross-sectional view showing an example of a method for manufacturing a light-emitting device. Figures 5A to 5E is a cross-sectional view showing an example of a method for manufacturing a light-emitting device. Figures 6A to 6C It is a cross-sectional view showing an example of a method for manufacturing a light-emitting device. Figures 7A to 7C It is a cross-sectional view showing an example of a method for manufacturing a light-emitting device. Figures 8A to 8C It is a cross-sectional view showing an example of a method for manufacturing a light-emitting device. Figures 9A to 9C It is a cross-sectional view showing an example of a method for manufacturing a light-emitting device. Figure 10A and Figure 10C It is a cross-sectional view showing an example of a method for manufacturing a light-emitting device. Figures 11A to 11G It is a top view showing an example of the structure of a pixel. Figures 12A to 12I It is a top view showing an example of the structure of a pixel. Figure 13A and Figure 13B It is a perspective view showing an example of the structure of a display module. Figure 14A and Figure 14B It is a cross-sectional view showing an example of the structure of a light-emitting device. Figure 15 It is a perspective view showing an example of the structure of a light-emitting device. Figure 16A It is a cross-sectional view showing an example of the structure of a light-emitting device. Figure 16B and Figure 16C It is a cross-sectional view showing an example of the structure of a transistor. Figure 17 It is a cross-sectional view showing an example of the structure of a light-emitting device. Figures 18A to 18D It is a cross-sectional view showing an example of the structure of a light-emitting device. Figure 19A and Figure 19D It is a diagram showing an example of an electronic device. Figure 20A and Figure 20F It is a diagram showing an example of an electronic device. Figures 21A to 21G It is a diagram showing an example of an electronic device. Figure 22A and Figure 22B It is a diagram showing a light-emitting device. Figure 23A and Figure 23B It is an energy band diagram showing the driving mechanism of a light-emitting device. Figure 24 It is a diagram showing the luminance-current density characteristics of a light-emitting device and a comparative light-emitting device. Figure 25It is a diagram showing the luminance-voltage characteristics of a light-emitting device and a comparative light-emitting device. Figure 26 It is a diagram showing the current efficiency-current density characteristics of a light-emitting device and a comparative light-emitting device. Figure 27 It is a diagram showing the current density-voltage characteristics of a light-emitting device and a comparative light-emitting device. Figure 28 It is a diagram showing the external quantum efficiency-current density characteristics of a light-emitting device and a comparative light-emitting device. Figure 29 It is a diagram showing the electroluminescence spectra of a light-emitting device and a comparative light-emitting device. Figure 30 It is a diagram showing the normalized luminance-time change characteristics of a light-emitting device and a comparative light-emitting device. Mode for carrying out the invention

[0041] The embodiments will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and it is easily understood by those skilled in the art that its modes and details can be changed into various forms without departing from the gist and scope of the present invention. Therefore, the present invention should not be construed as being limited only to the content described in the following embodiments.

[0042] Note that in the structure of the invention described below, the same reference numerals are used commonly between different drawings to denote the same parts or parts having the same functions, and the repeated description thereof is omitted. In addition, when denoting parts having the same functions, sometimes the same hatching is used without particularly attaching reference numerals.

[0043] In addition, for ease of understanding, the positions, sizes, ranges, etc. of the respective constituent elements shown in the drawings do not necessarily represent their actual positions, sizes, ranges, etc. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings.

[0044] In the present specification and the like, a light-emitting device (also referred to as a light-emitting element) includes an EL layer between a pair of electrodes. The EL layer includes at least a light-emitting layer. In the present specification and the like, a light-receiving device (also referred to as a light-receiving element) includes at least an active layer serving as a photoelectric conversion layer between a pair of electrodes. In the present specification and the like, sometimes one of the pair of electrodes is denoted as a pixel electrode and the other as a common electrode.

[0045] Note that the light-emitting device in this specification includes an image display device using an organic EL device. In addition, the light-emitting device sometimes further includes the following modules: a module in which an organic EL device is mounted with a connector such as an anisotropic conductive film or a TCP (Tape Carrier Package); a module in which a printed circuit board is provided at an end of the TCP; or a module in which an IC (integrated circuit) is directly mounted on the organic EL device by a COG (Chip On Glass) method. Furthermore, a lighting device or the like sometimes includes the light-emitting device.

[0046] (Embodiment 1) The organic EL element (hereinafter, also referred to as a light-emitting device) includes an organic compound layer containing a light-emitting substance between electrodes (between a first electrode and a second electrode), and emits light by using the energy generated from the recombination of carriers (holes and electrons) injected from the electrodes into the organic compound layer.

[0047] Figure 1A A light-emitting device 130 showing one aspect of the present invention is shown. The light-emitting device of one aspect of the present invention includes an organic compound layer 103 (note that the organic compound layer is also referred to as an EL layer) having a light-emitting layer 113 and an electron injection layer 115 between a first electrode 101 having an anode and a second electrode 102 having a cathode.

[0048] Here, it is preferable to use a mixed layer containing at least the following two organic compounds for the electron injection layer 115: a first organic compound having strong basicity and a second organic compound whose lowest unoccupied molecular orbital energy level (LUMO energy level) is lower than that of the first organic compound. That is, the LUMO energy level of the first organic compound having strong basicity is preferably higher than the LUMO energy level of the second organic compound. By adopting this structure, the occurrence of problems caused by the alkali metal or the compound of the alkali metal used so far can be reduced.

[0049] In the light-emitting device of one aspect of the present invention, when an organic compound having strong basicity with a large acidity coefficient pKa is used for the electron injection layer 115, after the organic compound having strong basicity captures or blocks holes injected from the first electrode 101 (anode) side, electrons are injected from the electron injection layer 115 and driven.

[0050] Note that the organic compound having strong basicity blocks holes because a material with a large pKa has a large dipole moment. Through the interaction between this dipole moment and holes, the electron injection layer 115 can block holes.

[0051] In addition, an organic compound with strong basicity has high nucleophilicity. That is, a material with high nucleophilicity sometimes reacts with a molecule that accepts a hole to become a cation radical to generate a new molecule or an intermediate state. Since this reaction consumes holes, this sometimes significantly reduces the hole transportability of the electron injection layer 115.

[0052] Note that the above-mentioned organic compound with strong basicity preferably does not include an electron transport skeleton. This is to suppress the recombination of electrons injected into the electron injection layer 115 with holes captured by the organic compound with strong basicity to efficiently inject electrons into the first light-emitting unit 501.

[0053] In addition, when holes and electrons are respectively injected into the highest occupied molecular orbital energy level (HOMO energy level) and the lowest unoccupied molecular orbital energy level (LUMO energy level) of the organic compound with strong basicity, carrier recombination easily forms an unstable excited state, resulting in a decrease in reliability, which leads to a decrease in the characteristics of the light-emitting device.

[0054] In view of this, by mixing a second organic compound with electron transportability into the electron injection layer 115 using the first organic compound with strong basicity, molecules that capture or block holes can be separated from molecules that conduct electrons, and the recombination probability of carriers in the electron injection layer 115 can be reduced to suppress the formation of unstable excited states, thereby improving reliability. That is, by including a first organic compound for capturing holes and a second organic compound for transporting electrons in the mixed layer for the electron injection layer 115, the formation of unstable excited states is suppressed and the reliability is improved.

[0055] Therefore, as the second organic compound with electron transportability, it is preferable to use an organic compound whose LUMO energy level is lower than that of the first organic compound with strong basicity. In addition, as the second organic compound with electron transportability, it is preferable to use an organic compound whose HOMO energy level is lower than that of the first organic compound with strong basicity.

[0056] Note that the thicker the thickness of the electron injection layer 115, sometimes the farther the distance between the holes accumulated in the electron injection layer 115 and the electrons accumulated in the electrode, the electric field of the double layer is relaxed, which will lead to a higher voltage of the manufactured light-emitting device. Therefore, it is preferable to set the thickness of the electron injection layer 115 to be 2 nm or more and 13 nm or less, and more preferably 5 nm or more and 10 nm or less.

[0057] Note that as the first organic compound, an organic compound whose LUMO energy level is 0.05 eV or more higher than that of the second organic compound is preferably used. Alternatively, the first organic compound is preferably an organic compound whose LUMO energy level is preferably 0.1 eV or more higher, and more preferably 0.2 eV or more higher than that of the second organic compound. When there is such a difference, the probability that the first organic compound receives electrons due to the influence of energy at room temperature, an electric field, etc. can be reduced.

[0058] In addition, as the first organic compound, an organic compound whose HOMO energy level is 0.05 eV or more higher than that of the second organic compound is preferably used. Alternatively, the first organic compound is preferably an organic compound whose HOMO energy level is preferably 0.1 eV or more higher, and more preferably 0.2 eV or more higher than that of the second organic compound. When there is such a difference, the probability that the second organic compound receives holes due to the influence of energy at room temperature, an electric field, etc. can be reduced.

[0059] <First organic compound> The LUMO energy level of the first organic compound is preferably -2.50 eV or more and -1.00 eV or less. In addition, the HOMO energy level of the first organic compound is preferably -5.7 eV or more and -4.8 eV or less.

[0060] In addition, the first organic compound preferably does not include a skeleton having electron transporting properties. For example, as the first organic compound, there is an organic compound in which the aromatic ring does not contain a nitrogen atom (N).

[0061] In addition, the first organic compound is preferably a strongly basic organic compound having an acidity coefficient pKa of 8 or more. By including a strongly basic organic compound having a pKa of 8 or more, the first organic compound can block holes and accumulate holes in the first electron transport layer.

[0062] The first organic compound is preferably an organic compound having an acidity coefficient pKa of 8 or more, preferably greater than 10. In addition, the first organic compound is preferably an organic compound having an acidity coefficient pKa of 12 or more, more preferably greater than 13. In addition, the first organic compound is an organic compound having a basic skeleton, and the acidity coefficient pKa of the basic skeleton is 8 or more, preferably 10 or more, more preferably 12 or more, and further preferably greater than 13.

[0063] As the acidity coefficient pKa of the basic skeleton, the value of an organic compound in which a part of the skeleton is replaced by hydrogen can be used. In addition, as an acidity index of an organic compound including a basic skeleton, the acidity coefficient pKa of the basic skeleton can be used. In addition, when the organic compound includes a plurality of basic skeletons, the acidity coefficient pKa of the basic skeleton having the largest acidity coefficient pKa can be used as the acidity index of the organic compound.

[0064] Alternatively, the acidity coefficient pKa of an organic compound can also be determined by the following calculation.

[0065] First, the initial structure of the molecular structure of each molecule as the calculation model adopts the most stable structure (singlet ground state) obtained by first-principles calculation.

[0066] As the above first-principles calculation, use Jaguar, a quantum chemistry calculation software manufactured by Inc., to calculate the most stable structure in the singlet ground state through density functional theory (DFT). Use 6-31G** as the basis function and B3LYP-D3 as the functional. As the structure for performing quantum chemistry calculations, use Maestro GUI manufactured by Inc., and perform conformational analysis with Mixed torsional / Low-mode sampling for sampling.

[0067] In the pKa calculation, one or more atoms in each molecule are designated as basic positions, and Macro Model is used to explore the structure in which the protonated molecule is stable in water. The conformational isomer with the lowest energy obtained by conformational exploration using the OPLS2005 force field is used. Use the pKa calculation module of Jaguar to optimize its structure with B3LYP / 6-31G*, and then perform a single-point calculation with cc-pVTZ(+). The pKa value is calculated using the empirical correction for functional groups. Among the molecules in which one or more atoms are designated as basic positions, the largest value in the obtained results is used as the pKa value.

[0068] As a specific example of an organic compound with a large acid dissociation constant pKa, organic compounds having a basic skeleton represented by the following structural formulas (120) to (123) can be cited.

[0069] [Chemical formula 1]

[0070] In addition, preferably, the organic compound having an acidity coefficient pKa of 8 or more specifically has: a bicyclic structure in which the atoms constituting the ring contain two or more nitrogens; and a heteroaromatic ring having 2 to 30 carbon atoms constituting the ring or an aromatic ring having 6 to 30 carbon atoms constituting the ring. More specifically, it has: a 1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine skeleton; and a heteroaromatic ring having 2 to 30 carbon atoms constituting the ring or an aromatic ring having 6 to 30 carbon atoms constituting the ring. More preferably, the above organic compound is an organic compound having a bicyclic structure in which the atoms constituting the ring contain two or more nitrogens and a heteroaromatic ring having 2 to 30 carbon atoms constituting the ring. More specifically, it is an organic compound having a 1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine skeleton and a heteroaromatic ring having 2 to 30 carbon atoms constituting the ring. In addition, an organic compound having a guanidine skeleton is preferred.

[0071] More specifically, the organic compound is preferably an organic compound represented by the following general formula (G1).

[0072] [Chemical formula 2]

[0073] In the organic compound represented by the above general formula (G1), X represents a group represented by the following general formula (G1-1), and Y represents a group represented by the following general formula (G1-2). In addition, R 1 and R 2 each independently represent hydrogen or deuterium, h represents an integer from 1 to 6, and Ar represents a substituted or unsubstituted heteroaromatic ring having 2 to 30 carbon atoms constituting the ring or a substituted or unsubstituted aromatic ring having 6 to 30 carbon atoms constituting the ring. In addition, Ar is preferably a substituted or unsubstituted heteroaromatic ring having 2 to 30 carbon atoms constituting the ring.

[0074] [Chemical formula 3]

[0075] In the above general formulas (G1-1) and (G1-2), R 3 to R 6 each independently represent hydrogen or deuterium, m represents an integer from 0 to 4, n represents an integer from 1 to 5, and m + 1 ≥ n. Note that when m or n is 2 or more, the plurality of R3 to R 6 can be the same as or different from each other.

[0076] In addition, the organic compound represented by the above general formula (G1) is preferably represented by any one of the following general formulas (G2-1) to (G2-6).

[0077] [Chemical formula 4]

[0078] Note that, R 11 to R 26 each independently represents hydrogen or deuterium, h represents an integer from 1 to 6, Ar represents a substituted or unsubstituted heteroaromatic ring having 2 to 30 carbon atoms forming a ring or an aromatic ring having 6 to 30 carbon atoms forming a ring. Further, Ar is preferably a substituted or unsubstituted heteroaromatic ring having 2 to 30 carbon atoms forming a ring.

[0079] Note that, in the above general formula (G1) and general formulas (G2-1) to (G2-6), as the substituted or unsubstituted heteroaromatic ring having 2 to 30 carbon atoms forming a ring or the aromatic ring having 6 to 30 carbon atoms forming a ring represented by Ar, specifically, a pyridine ring, a bipyridine ring, a pyrimidine ring, a bipyrimidine ring, a pyrazine ring, a bipyrazine ring, a triazine ring, a quinoline ring, an isoquinoline ring, a benzoquinoline ring, a phenanthroline ring, a quinoxaline ring, a benzoquinoxaline ring, a dibenzoquinoxaline ring, an azacarbazole ring, a diazacarbazole ring, a carbazole ring, a benzocarbazole ring, a dibenzocarbazole ring, a dibenzofuran ring, a benzonaphthofuran ring, a dinaphthofuran ring, a dibenzothiophene ring, a benzonaphthothiophene ring, a dinaphthothiophene ring, a benzofuranopyridine ring, a benzofuranopyrimidine ring, a benzothiophenopyridine ring, a benzothiophenopyrimidine ring, a naphthofuranopyridine ring, a naphthofuranopyrimidine ring, a naphthothiophenopyridine ring, a naphthothiophenopyrimidine ring, a dibenzoquinoxaline ring, an acridine ring, an xanthene ring, a phenothiazine ring, a phenoxazine ring, a phenazine ring, a triazole ring, an oxazole ring, an oxadiazole ring, a thiazole ring, a thiadiazole ring, an imidazole ring, a benzimidazole ring, a pyrazole ring, a pyrrole ring, etc. can be mentioned. Further, in the above general formula (G1) and general formulas (G2-1) to (G2-6), as the substituted or unsubstituted heteroaromatic ring having 6 to 30 carbon atoms forming a ring represented by Ar, specifically, a benzene ring, a naphthalene ring, a fluorene ring, a dimethylfluorene ring, a diphenylfluorene ring, a spirofluorene ring, an anthracene ring, a phenanthrene ring, a triphenylene ring, a pyrene ring, a tetracene ring, (chrysene) ring, a benzo[a]anthracene ring, etc. are particularly preferably any one of the following structural formulas (Ar-1) to (Ar-27).

[0080] [Chemical formula 5]

[0081] Note that, preferably, the above Ar contains nitrogen as an atom forming a ring, and the Ar is bonded to the skeleton represented in parentheses in the above general formula (G1) by a bond of the nitrogen or a carbon adjacent to the nitrogen.

[0082] As the organometallic compounds represented by the above general formula (G1) and general formulas (G2-1) to (G2-6), specifically, for example, 1,1'-(9,9'-spirobi[9H-fluorene]-2,7-diyl)bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: 2,7hpp2SF) (structural formula 108) and 1-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine (abbreviation: 2hppSF) (structural formula 109) and other organic compounds represented by the following structural formulas (100) to (117) can be cited. Note that among them, organic compounds having a spirofluorene skeleton such as (106) to (109) or organic compounds having one hexahydropyrimidopyrimidine skeleton such as (102), (104), (105), (109), (110), and (115) are preferred, and the organic compound represented by (109) is particularly preferred.

[0083] [Chemical formula 6]

[0084] Note that substances having a strong basicity with a pKa of 8 or more preferably do not include an electron transport skeleton in order to suppress the recombination of injected electrons and blocked holes on substances having a strong basicity with a pKa of 8 or more. As substances having a strong basicity with a pKa of 8 or more, specifically, 1-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine (abbreviation: 2hppSF), 1-(2',7'-di-tert-butyl-9,9'-spirobi[9H-fluorene]-2-yl)-1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine (abbreviation: 2',7'tBu-2hppSF), 2,9-bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidin-1-yl)-1,10-phenanthroline (abbreviation: 2,9hpp2Phen), 4,7-di-1-pyrrolidinyl-1,10-phenanthroline (abbreviation: Pyrrd-Phen), or 8,8'-pyridine-2,6-diyl-bis(5,6,7,8-tetrahydroimidazo[1,2-a]pyrimidine) (abbreviation: 2,6tip2Py) and other organic compounds can be used. Specifically, for example, the acidity coefficient pKa of 2,9hpp2Phen is 13.35, the acidity coefficient pKa of 2hppSF is 13.95, the acidity coefficient pKa of 2,7hpp2SF is 14.83, the acidity coefficient pKa of 2',7'tBu-2hppSF is 14.18, the acidity coefficient pKa of Pyrrd-Phen is 11.23, and the acidity coefficient pKa of 2,6tip2Py is 9.58.

[0085] In addition, in the case of manufacturing a light-emitting device by a process such as atmospheric exposure or a washing process with an aqueous solution, the solubility of the first organic compound is preferably low. For example, the solubility of the first organic compound depends on the number of hydrophilic groups such as hpp groups in the first organic compound and the number of hydrophobic groups such as tert-butyl groups. Therefore, the fewer the hydrophilic groups in the first organic compound, the better, and preferably it is 1. In addition, the number of hydrophobic groups in the first organic compound is preferably larger than the number of hydrophilic groups. Specifically, it is preferably 2 or more.

[0086] Specifically, the solubility of the first organic compound is preferably less than 0.77 mg / ml, more preferably 0.065 mg / ml or less, further preferably 0.0023 mg / ml or less, and still further preferably 1×10-5 mg / ml or less.

[0087] Specifically, for example, the solubility of 1,1'-(9,9'-spirobi[9H-fluorene]-2,7-diyl)bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: 2,7hpp2SF) (structural formula 108) is 0.23 mg / ml or more and less than 0.39 mg / ml, the solubility of 1-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine (abbreviation: 2hppSF) (structural formula 109) is 0.018 mg / ml or more and less than 0.022 mg / ml, the solubility of 1,1'-(2',7'-tert-butyl-9,9'-spirobi[9H-fluorene]-2,7-diyl)bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: 2',7'tBu-2,7hpp2SF) is 0.058 mg / ml or more and less than 0.065 mg / ml, and the solubility of 1-(2',7'-di-tert-butyl-9,9'-spirobi[9H-fluorene]-2-yl)-1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine (abbreviation: 2',7'tBu-2hppSF) is less than 0.0023 mg / ml. Because of their low solubility, they are preferred.

[0088] In addition, in the case of adding a first organic compound with high solubility, a light-emitting device that prevents defects can also be provided by adjusting the concentration of the first organic compound in the electron injection layer 115. Specifically, when the concentration (wt%) of the first organic compound in the electron injection layer 115 is set to y and the water solubility (mg / ml) of the first organic compound is set to x, y is preferably less than or equal to -8.735×ln(x)-2.3154.

[0089] <Second organic compound> On the other hand, the second organic compound is an organic compound having electron transporting properties. As a material having electron transporting properties, it is preferably used when the square root of the electric field strength [V / cm] is 600 and the electron mobility is 1×10 -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2 / Vs or more. In addition, as long as the material has higher electron transporting properties than hole transporting properties, materials other than the above can be used. As the above organic compound, an organic compound containing a π-deficient heteroaromatic ring is preferably used. As an organic compound containing a π-deficient heteroaromatic ring, for example, an organic compound containing a heteroaromatic ring having a triazole skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, an organic compound containing a heteroaromatic ring having a diazine skeleton, and an organic compound containing a heteroaromatic ring having a triazine skeleton are preferably used, any one or more of them. In addition, the second organic compound preferably does not include a hole transporting skeleton. For example, as the second organic compound, there is an organic compound that does not include an amine skeleton or a carbazole skeleton.

[0090] In addition, the LUMO energy level of the second organic compound is preferably -3.25 eV or more and -2.50 eV or less. In addition, the HOMO energy level of the second organic compound is preferably -6.5 eV or more and -5.7 or less.

[0091] In addition, the acid dissociation constant pKa of the second organic compound is preferably 3 or more and 8 or less, more preferably 4 or more and 6 or less.

[0092] The second organic compound preferably includes a skeleton having electron transporting properties. As a material having electron transporting properties, for example, it is preferably used: beryllium(II) bis(10-hydroxybenzo[h]quinoline) (abbreviation: BeBq2), aluminum(III) bis(2-methyl-8-hydroxyquinoline)(4-phenylphenol) (abbreviation: BAlq), zinc(II) bis(8-hydroxyquinoline) (abbreviation: Znq), zinc(II) bis[2-(2-benzoxazolyl)phenol] (abbreviation: ZnPBO), zinc(II) bis[2-(2-benzothiazolyl)phenol] (abbreviation: ZnBTZ) and other metal complexes, organic compounds including π-deficient heteroaromatic rings. As an organic compound including a π-deficient heteroaromatic ring, for example, an organic compound containing a heteroaromatic ring having a triazole skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, an organic compound containing a heteroaromatic ring having a diazine skeleton, and an organic compound containing a heteroaromatic ring having a triazine skeleton can be cited.

[0093] Among them, an organic compound containing a heteroaromatic ring having a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), an organic compound containing a heteroaromatic ring having a pyridine skeleton, or an organic compound containing a heteroaromatic ring having a triazine skeleton has good reliability and is therefore preferred. In particular, an organic compound containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and an organic compound containing a heteroaromatic ring having a triazine skeleton have high electron transport properties and contribute to reducing the driving voltage. In addition, a benzofuranopyrimidine skeleton, a benzothiophenopyrimidine skeleton, a benzofuranopyrazine skeleton, and a benzothiophenopyrazine skeleton have good reliability and are therefore preferred.

[0094] As the organic compound including a π-deficient heteroaromatic ring, the materials exemplified as the organic compound having electron transport properties in the first electron transport layer described below can be used. In particular, an organic compound containing a heteroaromatic ring having a diazine skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, or an organic compound containing a heteroaromatic ring having a triazine skeleton has good reliability and is therefore preferred. In particular, an organic compound containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and an organic compound containing a heteroaromatic ring having a triazine skeleton have high electron transport properties and contribute to reducing the driving voltage. In particular, organic compounds having a phenanthroline skeleton such as mTpPPhen, PnNPhen, and mPPhen2P are preferred, and organic compounds having a phenanthroline dimer structure such as mPPhen2P have excellent stability and are therefore more preferred. In addition, materials having a pyridine skeleton or / and materials having a phenanthroline skeleton have a large pKa, and thus have high hole blocking properties and are particularly suitable as an electron transport material used as the second organic compound in a light-emitting device according to one embodiment of the present invention. Further, the larger the number of pyridine skeletons or phenanthroline skeletons in the molecule, the higher the hole blocking property, and it is particularly suitable as an electron transport material used as the second organic compound in a light-emitting device according to one embodiment of the present invention.

[0095] By co-evaporating the organic compound described in <the first organic compound> and the organic compound described in <the second organic compound>, a mixed layer can be formed. By using this mixed layer as an electron injection layer in the intermediate layer, the reliability of the light-emitting device can be improved.

[0096] <Structure of the light-emitting device> Hereinafter, a specific structure other than the above structure of the light-emitting device 130 including the above organic compound will be described.

[0097] The first light-emitting unit 501 and the second light-emitting unit may also include other functional layers other than the light-emitting layer. Figure 1AThe structure is shown in which, in the organic compound layer 103, in addition to the light-emitting layer 113 and the electron injection layer 115, a hole injection layer 111, a hole transport layer 112, and an electron transport layer 114 are also provided. However, the structure of the organic compound layer 103 of the present invention is not limited thereto, and any of the above layers may not be provided, or other layers may be provided. As other layers, typically, there are a carrier blocking layer, an exciton blocking layer, and the like.

[0098] As described above, the electron injection layer 115 is a layer containing a first organic compound having a basic skeleton and a second organic compound having electron transporting properties. One or more of a metal, a metal compound, and a metal complex may also be mixed in this layer.

[0099] In addition, the first organic compound in the electron injection layer 115 preferably does not have an electron donating property. Further, the first organic compound preferably does not have an electron donating property with respect to the second organic compound having electron transporting properties. When the first organic compound has an electron donating property, it is more likely to react with atmospheric components such as water or oxygen, so the stability decreases. By including the first organic compound and the second organic compound having electron transporting properties, the hole transporting property of the electron injection layer 115 can be significantly reduced, so that even if the first organic compound does not have an electron donating property, it can be used as an electron injection layer. Thus, a light-emitting device stable to atmospheric components such as water or oxygen can be manufactured. In addition, in the electron injection layer 115, preferably, the signal observed by electron spin resonance (ESR: Electron Spin Resonance) is small or no signal is observed. For example, the spin density due to the signal observed around a g value of 2.00 is preferably 1×10 17 spins / cm 3 Hereinafter, more preferably, it is less than 1×10 16 spins / cm 3 .

[0100] [Electrode] Hereinafter, the structures of the first electrode 101 and the second electrode 102 of the light-emitting device 130 will be described.

[0101] The first electrode 101 is an electrode including an anode. The first electrode 101 may also have a laminated structure, in which the layer in contact with the organic compound layer 103 is used as the anode. The anode is preferably formed of a metal, an alloy, a conductive compound, and a mixture thereof having a large work function (specifically, 4.0 eV or more). Specifically, for example, indium tin oxide (ITO), indium tin oxide containing silicon or silicon oxide, indium zinc oxide, indium oxide containing tungsten oxide and zinc oxide (IWZO), etc. can be cited. Although these conductive metal oxide films are usually deposited by sputtering, sol-gel methods or the like can also be applied for formation. As an example of the formation method, a method of forming indium zinc oxide by sputtering using a target in which 1 wt% to 20 wt% of zinc oxide is added to indium oxide can be cited. In addition, indium oxide containing tungsten oxide and zinc oxide (IWZO) can be formed by sputtering using a target in which 0.5 wt% to 5 wt% of tungsten oxide and 0.1 wt% to 1 wt% of zinc oxide are added to indium oxide. In addition, as materials for the anode, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or nitrides of metal materials (for example, titanium nitride) etc. can be cited. In addition, graphene can also be used as a material for the anode. In addition, by using the composite material described later for the layer in contact with the anode (typically, the hole injection layer), there is no need to consider the work function when selecting the electrode material.

[0102] [Organic compound layer] The structure of the organic compound layer 103 will be described below.

[0103] The organic compound layer 103 has a laminated structure. In Figure 1A this case, the laminated structure has a hole injection layer 111, a hole transport layer 112, a light emitting layer 113, an electron transport layer, and an electron injection layer 115. The structure of the organic compound layer 103 is not limited to Figure 1A the structure shown, and various functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a carrier blocking layer (hole blocking layer, electron blocking layer), an exciton blocking layer, and an intermediate layer can be appropriately used to constitute it.

[0104] The hole injection layer 111 is in contact with the anode and has the function of easily injecting holes into the organic compound layer 103 (the first light-emitting unit 501). Phthalocyanine compounds or complexes such as phthalocyanine (abbreviation: H2Pc) and copper phthalocyanine (abbreviation: CuPc) can be used; aromatic amine compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), etc.; or polymers such as poly(3,4-ethylenedioxythiophene) / (polystyrenesulfonic acid) (abbreviation: PEDOT / PSS) can be used to form the hole injection layer 111.

[0105] In addition, the hole injection layer 111 can also be formed using a substance having an electron-accepting property. As the substance having an accepting property, an organic compound having an electron-withdrawing group (halogen group, cyano group, etc.) can be used, and examples thereof include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloroquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile, etc. In particular, compounds such as HAT-CN in which an electron-withdrawing group is bonded to a condensed aromatic ring having a plurality of heteroatoms are thermally stable, so they are preferred. In addition, [3]axylene derivatives having an electron-withdrawing group (especially a halogen group such as a fluorine group, a cyano group, etc.) have a very high electron-accepting property, so they are particularly preferred. Specifically, examples thereof include: α,α',α''-1,2,3-cyclopropanetriylidene tris[4-cyano-2,3,5,6-tetrafluorobenzyl cyanide], α,α',α''-1,2,3-cyclopropanetriyl tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzyl cyanide], α,α',α''-1,2,3-cyclopropanetriyl tris[2,3,4,5,6-pentafluorobenzyl cyanide], etc. As the substance having an accepting property, in addition to the above organic compounds, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can also be used.

[0106] In addition, the hole injection layer 111 can be similarly formed using a composite material containing a material having an acceptor property and a hole-transporting organic compound. The material having an acceptor property preferably has an electron acceptor property with respect to the hole-transporting organic compound. As the material having an acceptor property, the materials exemplified in the above paragraph can be used.

[0107] As the hole-transporting organic compound for the composite material, various organic compounds such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. As the hole-transporting organic compound for the composite material, it is preferable to use an organic compound having a hole mobility of 1×10 -6 cm 2 / Vs or more. The hole-transporting organic compound for the composite material is preferably a compound containing a fused aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. As the fused aromatic hydrocarbon ring, an anthracene ring, a naphthalene ring, etc. are preferable. In addition, as the π-electron-rich heteroaromatic ring, a fused aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, and a thiophene skeleton is preferable, and specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which these rings are further fused with an aromatic ring or a heteroaromatic ring is preferable.

[0108] Such a hole-transporting organic compound more preferably has any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton. In particular, it can be an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine containing a naphthalene ring, or an aromatic monoamine in which 9-fluorenyl is bonded to the nitrogen of the amine through an arylene group. Note that when these hole-transporting organic compounds are substances including N,N-bis(4-biphenyl)amino, a light-emitting device with a long lifetime can be manufactured, so they are preferable.

[0109] As the above-mentioned organic compound having hole-transporting properties, specifically, N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophene-4-yl)phenyl]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthalen-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthalen-2-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-diphenyl-4''-(7-phenyl)naphthalen-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthalen-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthalen-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthalen-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-diphenyl-4''-(5;2'-binaphthalen-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)phenyl]tris(biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazol-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis[(biphenyl)-4-yl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis[(biphenyl)-4-yl]-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-bis(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-Spirobi[9H-fluorene]-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-1-amine, etc.

[0110] In addition, as materials having hole transport properties, as other aromatic amine compounds, N,N'-bis(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), etc. can also be used.

[0111] Note that in the hole injection layer 111, the organic compound having hole transport properties for the composite material is more preferably a substance having a lower HOMO energy level with a HOMO energy level of -5.7 eV or more and -5.4 eV or less. When the organic compound having hole transport properties for the composite material has a lower HOMO energy level, holes are easily injected into the hole transport layer, and a light-emitting device with a long lifetime can be easily obtained. In addition, when the organic compound having hole transport properties for the composite material is a substance having a lower HOMO energy level, the induction of holes is appropriately suppressed, so a light-emitting device with an even longer lifetime can be realized.

[0112] By forming the hole injection layer 111, the hole injection property can be improved, and thus a light-emitting device with a low driving voltage can be obtained.

[0113] In addition, among substances having acceptor properties, the organic compound having acceptor properties can be easily deposited by evaporation, so it is a material that is easy to use.

[0114] The hole transport layer 112 is formed by including an organic compound having hole transport properties. The organic compound having hole transport properties preferably has a hole mobility of 1×10 -6 cm 2 / Vs or more.

[0115] Examples of the hole-transporting material described above include compounds having an aromatic amine skeleton such as 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-bis(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), etc.;1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-bis(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1''-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1''-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1''-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1''-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1''-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylene-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylene-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-bis(triphenylene-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenylene-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylene-2-yl)-9'-[1,1':3',1''-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole and other compounds with a carbazole skeleton;Compounds with a thiophene backbone such as 4,4’,4”-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV); and compounds with a furan backbone such as 4,4’,4”-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among them, compounds with an aromatic amine backbone or a carbazole backbone have good reliability and high hole transportability and help reduce the driving voltage, so they are preferred. Note that substances cited as hole-transporting materials for use as composite materials for the hole injection layer 111 can also be appropriately used as materials for the hole transport layer 112.;

[0116] The light-emitting layer 113 preferably contains a light-emitting substance and a host material. In addition, the light-emitting layer may also contain other materials at the same time. In addition, it may also be a laminate of two layers with different compositions.

[0117] The light-emitting substance can be a fluorescent light-emitting substance, a phosphorescent light-emitting substance, a substance showing thermally activated delayed fluorescence (TADF), or other light-emitting substances.

[0118] In the light-emitting layer, as materials that can be used as fluorescent light-emitting substances, for example, the following substances can be cited. Note that in addition to this, other fluorescent light-emitting substances can also be used.

[0119] Examples include 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenyldistyrene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butyldiperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyl-di-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-benzenediamine) (abbreviation: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-benzenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N''' - octaphenyldibenzo[g,p] (chrysene)-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), Rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]vinyl}-6-methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]vinyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), N,N'-diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. In particular, fused aromatic diamine compounds represented by pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, 1,6BnfAPrn-03, etc. have good hole trapping properties, high luminous efficiency or good reliability, so they are preferred.

[0120] When a phosphorescent light-emitting material is used as a light-emitting substance in the light-emitting layer, examples of usable materials include the following substances.

[0121] Examples include: tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazole)iridium(III) (abbreviation: [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), etc., organometallic iridium complexes having a 4H-triazole skeleton; tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazole]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazole)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), etc., organometallic iridium complexes having a 1H-triazole skeleton; fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), etc., organometallic iridium complexes having an imidazole skeleton; and bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’Iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3’,5’-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4’,6’-difluorophenyl)pyridinato-N,C 2’ iridium(III) acetylacetonate (abbreviation: FIracac), etc., which are organometallic iridium complexes with phenylpyridine derivatives having an electron-withdrawing group as ligands. The above substances are compounds that exhibit blue phosphorescence and are compounds having an emission peak in the wavelength region of 450 nm to 520 nm.

[0122] In addition, examples include: tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-tert-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornanyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), etc., which are organometallic iridium complexes having a pyrimidine skeleton; (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), etc., which are organometallic iridium complexes having a pyrazine skeleton; tris(2-phenylpyridinato-N,C 2' )iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2' )iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2'Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinoline-N,C 2' ) iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), [2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridin-κN]benzofuro[2,3-b]pyridine-7-yl-κC]bis[5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridin-κN]phenyl-κC]iridium(III) (abbreviation: Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridin-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridin-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridin-κN)phenyl-κC]bis[2-(2-pyridin-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mdppy)) and other organometallic iridium complexes having a pyridine skeleton; and rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline) terbium(III) (abbreviation: [Tb(acac)3(Phen)]). The above substances are mainly compounds that exhibit green phosphorescence and have a luminescence peak in the wavelength region of 500 nm to 600 nm. In addition, organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because they have particularly excellent reliability and luminescence efficiency.

[0123] In addition, examples include: bis(4,6-bis(3-methylphenyl)pyrimidinato)(diisobutyrylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis(4,6-bis(3-methylphenyl)pyrimidinato)(dineopentanoylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis(4,6-di(naphthalen-1-yl)pyrimidinato)(dineopentanoylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]) and other organometallic iridium complexes having a pyrimidine skeleton; bis(2,3,5-triphenylpyrazinato)(acetylacetonato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dineopentanoylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), bis(2,3-bis(4-fluorophenyl)quinoxalinato)(acetylacetonato)iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]) and other organometallic iridium complexes having a pyrazine skeleton; tris(1-phenylisoquinoline-N,C 2’ )iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinoline-N,C 2’ )iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]) and other organometallic iridium complexes having a pyridine skeleton; platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP); and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]), tris[1-(2-thienoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]). The above substances are compounds that exhibit red phosphorescence and have a luminescence peak in the wavelength region of 600 nm to 700 nm. In addition, organometallic iridium complexes having a pyrazine skeleton can obtain red luminescence with good chromaticity.

[0124] In addition, in addition to the above phosphorescent compounds, known phosphorescent compounds can also be selected and used.

[0125] As the TADF material, fullerenes and their derivatives, acridine and its derivatives, eosin derivatives, etc. can be used. In addition, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc. can also be cited. As the metal-containing porphyrin, for example, protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), octaethylporphyrin-platinum chloride complex (PtCl2OEP), etc. represented by the following structural formula can also be cited.

[0126] [Chemical formula 7]

[0127] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridin)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviation: ACRSA), etc., which have one or both of a π-rich heteroaromatic ring and a π-deficient heteroaromatic ring, can be used. Such a heterocyclic compound has a π-rich heteroaromatic ring and a π-deficient heteroaromatic ring, and has high electron transportability and hole transportability, so it is preferred. Among them, in the skeleton having a π-deficient heteroaromatic ring, a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton) and a triazine skeleton are stable and have good reliability, so they are preferred. In particular, a benzofuranopyrimidine skeleton, a benzothiophenopyrimidine skeleton, a benzofuranopyrazine skeleton, and a benzothiophenopyrazine skeleton have high acceptor properties and good reliability, so they are preferred. In addition, in the skeleton having a π-rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton and a pyrrole skeleton are stable and have good reliability, so it is preferred to have at least one of the above skeletons. In addition, a dibenzofuran skeleton is preferably used as the furan skeleton, and a dibenzothiophene skeleton is preferably used as the thiophene skeleton. As the pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferably used. In a substance in which a π-rich heteroaromatic ring and a π-deficient heteroaromatic ring are directly bonded, the electron-donating property of the π-rich heteroaromatic ring and the electron-accepting property of the π-deficient heteroaromatic ring are both high, and the energy difference between the S1 energy level and the T1 energy level becomes small, so thermally activated delayed fluorescence can be obtained efficiently, so it is particularly preferred. Note that an aromatic ring bonded with an electron-withdrawing group such as a cyano group can also be used instead of the π-deficient heteroaromatic ring. In addition, as the π-rich skeleton, an aromatic amine skeleton, a phenazine skeleton, etc. can be used.In addition, as the π-deficient electron type skeleton, an oxygen xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane and boranthrene, an aromatic ring or heteroaromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. can be used. Thus, at least one of the π-deficient electron type skeleton and the π-excessive electron type skeleton can be used instead of the π-deficient electron type heteroaromatic ring and the π-excessive electron type heteroaromatic ring.

[0128] [Chemical formula 8]

[0129] In addition, as the TADF material, a TADF material in which the singlet excited state and the triplet excited state are in a thermal equilibrium state can also be used. Since the emission lifetime (excitation lifetime) of this TADF material is short, a decrease in efficiency in the high-brightness region of the light-emitting device can be suppressed. Specifically, materials having the following molecular structures can be cited.

[0130] [Chemical formula 9]

[0131] The TADF material is a material in which the energy difference between the S1 energy level and the T1 energy level is small and has the function of converting triplet excitation energy into singlet excitation energy through reverse intersystem crossing. Therefore, triplet excitation energy can be up-converted into singlet excitation energy (reverse intersystem crossing) by a small thermal energy and singlet excited states can be efficiently generated. In addition, triplet excitation energy can be converted into light emission.

[0132] An exciplex formed by two substances in the excited state has the function of a TADF material that can convert triplet excitation energy into singlet excitation energy because the energy difference between the S1 energy level and the T1 energy level is extremely small.

[0133] Note that, as an index of the T1 energy level, a phosphorescence spectrum observed at a low temperature (for example, 77 K to 10 K) can be used. Regarding the TADF material, preferably, when the wavelength energy of the extrapolated line obtained by drawing a tangent line at the tail on the short-wavelength side of the fluorescence spectrum is the S1 energy level and the wavelength energy of the extrapolated line obtained by drawing a tangent line at the tail on the short-wavelength side of the phosphorescence spectrum is the T1 energy level, the energy difference between the S1 energy level and the T1 energy level is 0.3 eV or less, more preferably 0.2 eV or less.

[0134] In addition, when a TADF material is used as the light-emitting substance, the S1 energy level of the host material is preferably higher than the S1 energy level of the TADF material. In addition, the T1 energy level of the host material is preferably higher than the T1 energy level of the TADF material.

[0135] As the host material of the light-emitting layer, various carrier transport materials such as materials having electron-transporting properties and / or materials having hole-transporting properties, and the above-mentioned TADF materials can be used.

[0136] As a material having hole transporting properties, an organic compound having an amine skeleton or a π - electron - rich heteroaromatic ring skeleton is preferably used. For example, the following can be cited: 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-bis(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF) and other compounds having an aromatic amine skeleton; 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-bis(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP) and other compounds having a carbazole skeleton; 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV) and other compounds having a thiophene skeleton; and 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II) and other compounds having a furan skeleton. Among them, the compound having an aromatic amine skeleton or the compound having a carbazole skeleton has good reliability and high hole transporting properties and helps to reduce the driving voltage, so it is preferred.In addition, an organic compound cited as an example of a material having hole-transporting properties can also be used.

[0137] As materials having electron transporting properties, for example, the following are preferably used: metal complexes such as bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-hydroxyquinolinato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-hydroxyquinolinato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), etc., and organic compounds including π-deficient heteroaromatic rings. As organic compounds including π-deficient heteroaromatic rings, for example, the following can be cited: organic compounds having an oxazole skeleton such as 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), etc.; organic compounds containing heteroaromatic rings having a pyridine skeleton such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tris[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), bathophenanthroline (abbreviation: Bphen), bathocuproine (abbreviation: BCP), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2,2'-biphenyl-4,4'-diylbis(1,10-phenanthroline) (abbreviation: Phen2BP), etc.; 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-Diphenyl-9H-carbazol-9-yl)phenyl]dibenz[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(Dibenzothiophen-4-yl)phenyl]dibenz[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(Dibenzothiophen-4-yl)phenyl]dibenz[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3’-(Dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1’,2’:4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[(3’-Dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1’,2’:4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 4,6-Bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-Bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-Bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9’-[Pyrimidine-4,6-diylbis(biphenyl-3,3’-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(Biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-Bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-Bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3’-(Dibenzothiophen-4-yl)(biphenyl-3-yl)]naphtho[1’,2’:4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2’-Binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2’-(Pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2’-(Pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(Biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-Bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridinyl)phenyl]pyrimidine (abbreviation: 2,Organic compounds with a diazine backbone such as 4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz); 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthryl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3'-(triphenylene-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-(Triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-[8-(1,1’:4’,1”-terphenyl)-4-yl-1-dibenzofuranyl]-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), etc., which are organic compounds containing heteroaromatic rings having a triazine skeleton. Among them, organic compounds containing heteroaromatic rings having a diazine skeleton, organic compounds containing heteroaromatic rings having a pyridine skeleton, or organic compounds containing heteroaromatic rings having a triazine skeleton have good reliability, so they are preferred. In particular, organic compounds containing heteroaromatic rings having a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing heteroaromatic rings having a triazine skeleton have high electron transport properties and contribute to reducing the driving voltage.,

[0138] As the TADF material that can be used as the host material, the same materials as those exemplified above as the TADF material can be used. When the TADF material is used as the host material, the triplet excitation energy generated by the TADF material is converted into singlet excitation energy through reverse intersystem crossing and this energy is transferred to the luminescent material, thereby improving the luminous efficiency of the light-emitting device. At this time, the TADF material is used as the energy donor and the luminescent material is used as the energy acceptor.

[0139] This is very effective when the above luminescent material is a fluorescent luminescent material. In addition, at this time, in order to obtain high luminous efficiency, the S1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent luminescent material. In addition, the T1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent luminescent material. Therefore, the T1 energy level of the TADF material is preferably higher than the T1 energy level of the fluorescent luminescent material.

[0140] In addition, it is preferable to use a TADF material that emits light overlapping with the wavelength of the absorption band on the lowest energy side of the fluorescent luminescent material. Thereby, the excitation energy is smoothly transferred from the TADF material to the fluorescent luminescent material, and high-efficiency light emission can be obtained, so it is preferred.

[0141] In order to efficiently generate singlet excited energy from triplet excited energy through reverse intersystem crossing, it is preferable to generate carrier recombination in the TADF material. In addition, it is preferable that the triplet excited energy generated in the TADF material does not transfer to the triplet excited energy of the fluorescent emitter. For this purpose, the fluorescent emitter preferably has a protecting group around the lumophore (the skeleton that causes luminescence) possessed by the fluorescent emitter. As this protecting group, a substituent having no π bond is preferable, and a saturated hydrocarbon is preferable. Specifically, an alkyl group having 3 or more and 10 or less carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 or more and 12 or less carbon atoms, and a trialkylsilyl group having 3 or more and 10 or less carbon atoms can be cited. More preferably, it has a plurality of protecting groups. Since the substituent having no π bond has almost no function of transporting carriers, it has almost no influence on carrier transport or carrier recombination, and can keep the lumophore of the TADF material and the fluorescent emitter away from each other. Here, the lumophore refers to the atomic group (skeleton) that causes luminescence in the fluorescent emitter. The lumophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring. As the above lumophore, for example, a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, a naphthobisbenzofuran skeleton, etc. In particular, fluorescent emitters having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, a naphthobisbenzofuran skeleton have a high fluorescence quantum yield, so they are preferable.

[0142] When a fluorescent luminescent substance is used as the luminescent substance, as the host material, a material having an anthracene skeleton is preferably used. By using a substance having an anthracene skeleton as the host material of the fluorescent luminescent substance, a luminescent layer with high luminous efficiency and durability can be achieved. Among the substances having an anthracene skeleton used as the host material, a substance having a diphenylanthracene skeleton, especially a substance having a 9,10-diphenylanthracene skeleton, is chemically stable, so it is preferred. In addition, when the host material has a carbazole skeleton, the hole injection / transport property is improved, so it is preferred. However, when there is a benzocarbazole skeleton in which a benzene ring is also fused to the carbazole skeleton, its HOMO energy level is about 0.1 eV higher than that of the host material having a carbazole skeleton and it is easier to inject holes, so it is more preferred. In particular, when the host material has a dibenzocarbazole skeleton, its HOMO energy level is about 0.1 eV higher than that of the host material having a carbazole skeleton. Not only is it easy to inject holes, but also the hole transport property and heat resistance are improved, so it is preferred. Therefore, as the host material, a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or, a benzocarbazole skeleton or a dibenzocarbazole skeleton) is further preferred. Note that from the above viewpoint of hole injection / transport property, a benzofluorene skeleton or a dibenzofluorene skeleton can also be used instead of the carbazole skeleton. Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4-(9-phenyl-9H-fluoren-9-yl)-biphenyl-4'-yl]-anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,β-ADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthryl)benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-[4-(10-biphenyl-4-yl-9-anthryl)phenyl]-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), etc.In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good properties and are thus preferred.

[0143] In addition, the host material may also be a material that mixes multiple substances. When using a mixed host material, it is preferred to mix a material with electron-transporting properties and a material with hole-transporting properties. By mixing a material with electron-transporting properties and a material with hole-transporting properties, it becomes easier to adjust the transport properties of the light-emitting layer 113, and it is also possible to more simply control the recombination region. The weight ratio of the content of the material with hole-transporting properties to the material with electron-transporting properties may be from 1:19 to 19:1.

[0144] Note that, as part of the above-mentioned mixed materials, a phosphorescent light-emitting substance may be used. The phosphorescent light-emitting substance can be used as an energy donor that supplies excitation energy to the fluorescent light-emitting substance when the fluorescent light-emitting substance is used as the light-emitting substance.

[0145] In addition, an exciplex may also be formed using these mixed materials. By selecting a combination of exciplexes that emit light with a wavelength overlapping the absorption band on the lowest energy side of the light-emitting substance, energy transfer can be made smooth, and thus light emission can be obtained efficiently, which is preferred. In addition, by adopting this structure, the driving voltage can be reduced, and thus it is preferred.

[0146] Note that at least any one of the materials forming the exciplex may be a phosphorescent light-emitting substance. Thereby, triplet excitation energy can be efficiently converted into singlet excitation energy via reverse intersystem crossing.

[0147] Regarding the combination of materials that efficiently form an exciplex, the HOMO energy level of the material with hole-transporting properties is preferably higher than the HOMO energy level of the material with electron-transporting properties. In addition, the LUMO energy level of the material with hole-transporting properties is preferably higher than the LUMO energy level of the material with electron-transporting properties. Note that the LUMO energy level and HOMO energy level of the material can be obtained from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0148] Note that the formation of an exciplex can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, the emission spectra of an electron-transporting material, and the emission spectra of a mixed film formed by mixing these materials. When it is observed that the emission spectrum of the mixed film shifts to the longer wavelength side (or has a new peak on the longer wavelength side) compared to the emission spectra of the respective materials, it indicates the formation of an exciplex. Alternatively, by comparing the transient photoluminescence (PL) of a hole-transporting material, the transient PL of an electron-transporting material, and the transient PL of a mixed film formed by mixing these materials, when it is observed that the transient PL lifetime of the mixed film has a longer lifetime component or the ratio of the delayed component becomes larger compared to the transient PL lifetimes of the respective materials, it indicates the formation of an exciplex. In addition, the above transient PL can be referred to as transient electroluminescence (EL). In other words, by comparing the transient EL of a hole-transporting material, the transient EL of an electron-transporting material, and the transient EL of a mixed film of these materials, and observing the difference in transient response, the formation of an exciplex can be confirmed.

[0149] The electron transport layer is a layer containing a material having electron-transporting properties. As the material having electron-transporting properties, it is preferably a material having an electron mobility of 1×10 -7 cm 2 / Vs or more when the square root of the electric field strength [V / cm] is 600, and more preferably 1×10 -6 cm 2 / Vs or more. In addition, as long as the material has higher electron-transporting properties than hole-transporting properties, materials other than the above can be used. As the above organic compound, an organic compound containing a π-deficient heteroaromatic ring is preferably used. As the organic compound containing a π-deficient heteroaromatic ring, for example, an organic compound containing a heteroaromatic ring having a triazole skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, an organic compound containing a heteroaromatic ring having a diazine skeleton, and an organic compound containing a heteroaromatic ring having a triazine skeleton, any one or more of them are preferably used.

[0150] As the organic compound having electron-transporting properties that can be used in the above electron transport layer, the same organic compound having electron-transporting properties that can be used as the electron injection buffer layer in the above intermediate layer 116 can be used. In particular, an organic compound containing a heteroaromatic ring having a diazine skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, and an organic compound containing a heteroaromatic ring having a triazine skeleton have good reliability, so they are preferred. In particular, an organic compound containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and an organic compound containing a heteroaromatic ring having a triazine skeleton have high electron-transporting properties and contribute to reducing the driving voltage.

[0151] In addition, the electron transport layer preferably has an electron mobility of 1×10 -7 cm 2 / Vs or more and 5×10 -5 cm 2 / Vs or less when the square root of the electric field strength [V / cm] is 600. By reducing the transportability of electrons in the electron transport layer 114, the amount of electrons injected into the light-emitting layer can be controlled, thereby preventing the light-emitting layer from becoming a state with an excessive amount of electrons. When using a composite material to form the hole injection layer and the HOMO level of the hole-transporting material in the composite material is a relatively low HOMO level of -5.7 eV or more and -5.4 eV or less, in the case of adopting the above structure, a long lifetime can be obtained, so it is particularly preferred. Note that at this time, the HOMO level of the electron-transporting material is preferably -6.0 eV or more.

[0152] As the electron injection layer 115, a layer containing an alkali metal, an alkaline earth metal, or a compound or complex thereof such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-hydroxyquinoline-lithium (abbreviation: Liq) in addition to the above-mentioned first organic compound can be used. The electron injection layer 115 can be a layer containing an alkali metal, an alkaline earth metal, or a compound thereof in a layer composed of an electron-transporting substance or an electride. As the electride, for example, a substance obtained by adding electrons to a mixed oxide of calcium and aluminum at a high concentration can be cited.

[0153] Note that as the electron injection layer 115, a layer containing a fluoride of the above-mentioned alkali metal or alkaline earth metal at a concentration equal to or higher than the concentration at which the electron-transporting substance (preferably an organic compound having a bipyridine skeleton) becomes a microcrystalline state (50 wt% or more) can also be used. Since this layer is a layer with a low refractive index, a light-emitting device with better external quantum efficiency can be provided.

[0154] The second electrode 102 is an electrode including a cathode. The second electrode 102 may also have a laminated structure, and in this case, the layer in contact with the organic compound layer 103 is used as the cathode. As the material for forming the cathode, metals, alloys, conductive compounds, and mixtures thereof having a small work function (specifically, 3.8 eV or less) can be used. Specific examples of such cathode materials include alkali metals such as lithium (Li) or cesium (Cs), elements belonging to Group 1 or Group 2 of the periodic table such as magnesium (Mg), calcium (Ca), strontium (Sr), alloys containing them (MgAg, AlLi), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing them. However, by providing an electron injection layer between the second electrode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, indium tin oxide containing silicon or silicon oxide, etc. can be used as the cathode regardless of the work function.

[0155] In addition, when the second electrode 102 is made of a material having transparency to visible light, a light-emitting device that emits light from the second electrode 102 side can be formed.

[0156] These conductive materials can be deposited by dry methods such as vacuum evaporation, sputtering, inkjet methods, spin coating methods, etc. In addition, wet methods such as sol-gel methods or wet methods using pastes of metal materials can also be used.

[0157] In addition, as a method for forming the organic compound layer 103, various methods can be used regardless of dry methods or wet methods. For example, vacuum evaporation, gravure printing, offset printing, screen printing, inkjet methods, or spin coating methods can also be used.

[0158] In addition, the above-mentioned respective electrodes or layers can also be formed by using different deposition methods.

[0159] Here, the mechanism of a light-emitting device using an organic compound having strong basicity for the electron injection layer will be described.

[0160] When an organic compound having strong basicity is used instead of alkali metals, alkaline earth metals represented by Li compounds, or these compounds, since the organic compound having strong basicity is not used as a donor, when the difference between the Fermi level (E F ) of the electrode and the LUMO level of the material having electron transportability is large, it is difficult to inject electrons ( Figure 23A ). Therefore, in a light-emitting device using an organic compound having basicity for the electron injection layer instead of a Li compound, the rise in the driving voltage is obvious.

[0161] Here, the inventors have found that by using a mixed layer of an organic compound having electron-transporting properties and an organic compound having hole-transporting properties as an electron transport layer, it is possible to suppress a significant increase in the driving voltage in a light-emitting device in which an organic compound having strong basicity is used for the electron injection layer instead of an Li compound.

[0162] This can be explained based on new knowledge that electrons flow but holes are blocked (do not flow) in the EL layer containing an organic compound having strong basicity, the generation of an electric dipole due to the accumulation of charges, and the drift of the vacuum level caused thereby, etc.

[0163] First, since the electron transport layer blocks holes or the hole-transporting property of the electron transport layer is low, holes injected from the anode into the EL layer accumulate near the interface on the side of the electron injection layer in the light-emitting layer or the electron transport layer. Note that at this time, the electron injection layer is preferably a layer that blocks holes or a layer having a significantly low hole mobility. When the electron injection layer contains an organic compound having strong basicity, holes accumulate near the interface on the first electron transport layer side of the electron injection layer ( Figure 23B ).

[0164] In addition, as described above, in a light-emitting device using an electron injection layer containing an organic compound having strong basicity, even when a voltage is applied, electrons are not easily injected due to the difference between the Fermi level of the electrode and the LUMO level of the material having electron-transporting properties, and electrons accumulate near the interface on the side of the electron injection layer in the cathode (note that when the electron injection layer does not contain a material having electron-transporting properties, that is, when it is a single film of an organic compound having strong basicity, electrons accumulate on the side of the single film of the organic compound having strong basicity).

[0165] Thus, in the light-emitting device of one embodiment of the present invention, holes accumulate near the interface on the electron transport layer side of the electron injection layer and electrons accumulate on the side of the electron injection layer in the cathode. The accumulated charges form a double layer to generate an electric dipole, and a drift of the vacuum level occurs, and the Fermi level of the cathode material approaches the LUMO level of the material having electron-transporting properties in the electron injection layer, and electrons are injected into the EL layer at a low voltage.

[0166] Next, a mode of a light-emitting device having a structure in which a plurality of light-emitting units are stacked (also referred to as a stacked device or a tandem device) will be described with reference to Figure 1B The light-emitting device is a light-emitting device having a plurality of light-emitting units between an anode and a cathode. One light-emitting unit has substantially the same structure as the organic compound layer 103 shown in Figure 1A . That is to say, Figure 1B the light-emitting device shown is a light-emitting device having a plurality of light-emitting units, while Figure 1A the light-emitting device shown is a light-emitting device having one light-emitting unit.

[0167] In Figure 1B Figure 1B , a first light-emitting unit 501 and a second light-emitting unit 502 are stacked between a first electrode 101 and a second electrode 102, and an intermediate layer 116 is provided between the first light-emitting unit 501 and the second light-emitting unit 502. In addition, the first light-emitting unit 501 and the second light-emitting unit 502 may have the same structure or different structures.

[0168] The intermediate layer 116 has a function of injecting electrons into one light-emitting unit and injecting holes into the other light-emitting unit when a voltage is applied to the first electrode 101 and the second electrode 102. That is, in Figure 1B Figure 1B , when a voltage is applied in such a manner that the potential of the anode is higher than the potential of the cathode, the intermediate layer 116 may be a layer that injects electrons into the first light-emitting unit 501 and injects holes into the second light-emitting unit 502.

[0169] The intermediate layer 116 includes a charge generation layer. In addition, the charge generation layer includes at least a P-type layer 117. The P-type layer 117 is preferably formed using the above-described composite material constituting the hole injection layer 111. In addition, the P-type layer 117 may also be formed by laminating a film containing an acceptor material and a film containing a hole transport material, which have been described above as materials constituting the composite material. By applying a potential to the P-type layer 117, electrons and holes are respectively injected into the electron transport layer 114 and the cathode, causing the light-emitting device to operate.

[0170] In addition, the intermediate layer 116 preferably further includes one or both of an electron relay layer 118 and an N-type layer 119 in addition to the P-type layer 117.

[0171] The electron relay layer 118 at least contains a substance having electron-transporting properties, and can prevent the interaction between the N-type layer 119 and the P-type layer 117 and smoothly transfer electrons. It is preferable to set the LUMO energy level of the substance having electron-transporting properties contained in the electron relay layer 118 between the LUMO energy level of the electron acceptor material in the P-type layer 117 and the LUMO energy level of the substance contained in the layer in contact with the intermediate layer 116 in the electron transport layer 114. Specifically, the LUMO energy level of the substance having electron-transporting properties in the electron relay layer 118 is -5.0 eV or more, preferably -5.0 eV or more and -3.0 eV or less. In addition, as the substance having electron-transporting properties in the electron relay layer 118, a phthalocyanine material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.

[0172] The N-type layer 119 can use substances with high electron injection properties such as alkali metals, alkaline earth metals, rare earth metals, and compounds of these substances (alkali metal compounds (including oxides such as lithium oxide, halides, carbonates such as lithium carbonate and cesium carbonate), alkaline earth metal compounds (including oxides, halides, carbonates), or compounds of rare earth metals (including oxides, halides, carbonates)).

[0173] In addition, when the N-type layer 119 contains a substance with electron transport properties and a donor substance, as the donor substance, in addition to alkali metals, alkaline earth metals, rare earth metals, and compounds of these substances (alkali metal compounds (including oxides such as lithium oxide, halides, carbonates such as lithium carbonate and cesium carbonate), alkaline earth metal compounds (including oxides, halides, carbonates), or compounds of rare earth metals (including oxides, halides, carbonates)), organic compounds such as tetrathianaphthacene (abbreviation: TTN), nickelocene, and decamethylnickelocene can also be used. In addition, as the substance with electron transport properties, the same materials as those described above for the electron transport layer 114 can be used.

[0174] In addition, a layer containing a strongly basic organic compound described as the layer used as the electron injection layer in Embodiment 1 can be provided at the same position as the N-type layer 119 instead of the N-type layer 119. A tandem light-emitting device can also be manufactured with this structure.

[0175] At this time, even when a voltage is applied to a tandem light-emitting device using a layer containing a strongly basic organic compound instead of the N-type layer 119, the strongly basic organic compound is not used as a donor and electrons are not generated in the layer containing the strongly basic organic compound (hereinafter, this layer is referred to as DLL). On the other hand, holes injected from the anode accumulate between the DLL or the light-emitting layer in the first light-emitting unit and the electron transport layer.

[0176] Due to the application of voltage and the accumulation of holes, electrons are induced by the P-type layer 117. The electrons induced by the P-type layer 117 accumulate at the interface on the DLL side in the P-type layer 117 due to the large difference in the LUMO energy levels of the acceptor material contained in the P-type layer 117 and the electron transport material contained in the DLL in the initial state (note that when the DLL does not contain an electron transport material, that is, a single film of a strongly basic organic compound, the electrons generated in the P-type layer 117 accumulate on the side of the single film of the strongly basic organic compound). The accumulated electrons and the holes accumulated between the DLL or the light-emitting layer in the first light-emitting unit and the electron transport layer together form a double layer, thereby generating an electric dipole.

[0177] As a result, the vacuum level drifts, the LUMO levels of the acceptor-containing material in the P-type layer 117 and the electron-transporting material in the DLL become close, and electrons generated in the P-type layer 117 are injected into the DLL. Then, the electrons injected into the DLL are also injected into the light-emitting unit 1, reach the first light-emitting layer and recombine, so light emission is obtained in the light-emitting unit 1. Thus, a light-emitting device using a DLL containing a strongly basic organic compound instead of the N-type layer 119 can be used as a tandem light-emitting device.

[0178] Note that, at this time, preferably, the layer containing the strongly basic organic compound has the same structure as the electron injection layer 115. That is to say, a mixed layer containing two or more organic compounds is preferably used as the layer containing the strongly basic organic compound, which contains a third organic compound with strong basicity and a fourth organic compound whose lowest unoccupied molecular orbital energy level (LUMO level) is lower than that of the third organic compound. That is, the LUMO level of the third organic compound with strong basicity is preferably higher than the LUMO level of the fourth organic compound. Thus, the formation of an unstable excited state can be suppressed and the reliability can be improved.

[0179] Note that, when the surface on the anode side of the light-emitting unit is in contact with the intermediate layer 116, the P-type layer of the intermediate layer 116 can also function as the hole injection layer of the light-emitting unit, so the hole injection layer may not be provided in the light-emitting unit. In addition, when the surface on the cathode side of the light-emitting unit is in contact with the intermediate layer 116, the intermediate layer 116 can also function as the electron injection layer of the light-emitting unit, so the electron injection layer may not be provided in the light-emitting unit.

[0180] Although a light-emitting device having two light-emitting units has been described Figure 1B a light-emitting device in which three or more light-emitting units are stacked can be applied in the same manner. As the light-emitting device according to the present embodiment, by separating and arranging a plurality of light-emitting units using the intermediate layer 116 between a pair of electrodes, the device can achieve high-brightness light emission while maintaining a low current density, and can achieve a long-life device. In addition, a light-emitting device capable of low-voltage driving and low power consumption can be realized.

[0181] In addition, by making the light-emitting colors of the respective light-emitting units different, light emission of a desired color can be obtained for the entire light-emitting device. For example, by obtaining red and green light-emitting colors from the first light-emitting unit and a blue light-emitting color from the second light-emitting unit in a light-emitting device having two light-emitting units, a light-emitting device that emits white light throughout the device can be obtained.

[0182] In addition, each layer such as the above-described organic compound layer 103, the first light-emitting unit 501, the second light-emitting unit 502, and the intermediate layer, and the electrodes can be formed, for example, by a vapor deposition method (including a vacuum vapor deposition method), a droplet ejection method (also referred to as an inkjet method), a coating method, a gravure printing method, or the like. Further, it may include a low-molecular material, a medium-molecular material (including an oligomer, a dendrimer), or a high-molecular material.

[0183] Figure 22A FIG. is a diagram showing two adjacent light-emitting devices (light-emitting devices 130a and 130b) included in a display device according to one embodiment of the present invention.

[0184] The light-emitting device 130a includes an organic compound layer 103a between a first electrode 101a on an insulating layer 175 and a second electrode 102 opposite to the first electrode 101a. Although the organic compound layer 103a is shown to have a structure including a hole injection layer 111a, a hole transport layer 112a, a light-emitting layer 113a, an electron transport layer 114a, and an electron injection layer 115a, the organic compound layer 103a may also have a stacked structure different from the above structure.

[0185] The light-emitting device 130b includes an organic compound layer 103b between a first electrode 101b on an insulating layer 175 and a second electrode 102 opposite to the first electrode 101b. Although the organic compound layer 103b is shown to have a structure including a hole injection layer 111b, a hole transport layer 112b, a light-emitting layer 113b, an electron transport layer 114b, and an electron injection layer 115b, the organic compound layer 103b may also have a stacked structure different from the above structure.

[0186] The structures of the electron transport layer 114a and the electron injection layer 115a in the light-emitting device 130a and the structures of the electron transport layer 114b and the electron injection layer 115b in the light-emitting device 130b are preferably the structures described in Embodiment 1.

[0187] The second electrode 102 is preferably a continuous layer shared by the light-emitting device 130a and the light-emitting device 130b. In addition, the organic compound layer 103a and the organic compound layer 103b are processed by photolithography after forming the electron injection layer 115a and after forming the electron injection layer 115b, respectively, and thus are independent of each other. In addition, the end portions (profiles) of the organic compound layer 103a are processed by photolithography, and thus are substantially aligned in the direction perpendicular to the substrate. In addition, the end portions (profiles) of the organic compound layer 103b are processed by photolithography, and thus are substantially aligned in the direction perpendicular to the substrate.

[0188] In addition, due to the processing using photolithography, there is a gap d between the organic compound layer 103a and the organic compound layer 103b. Further, by processing the EL layer using photolithography, the distance between the first electrode 101a and the first electrode 101b can be made smaller than that distance during mask evaporation, and it can be made 2 μm or more and 5 μm or less. In addition, an insulating layer can be provided in the gap d, and this insulating layer is in contact with the second electrode 102.

[0189] Figure 22B It is a diagram of two adjacent tandem light-emitting devices (light-emitting device 130c, light-emitting device 130d) manufactured by photolithography.

[0190] The light-emitting device 130c includes an organic compound layer 103c between the first electrode 101c on the insulating layer 175 and the second electrode 102. The organic compound layer 103c has a structure in which the first light-emitting unit 501c and the second light-emitting unit 502c are stacked with the intermediate layer 116c therebetween. Note that FIG. 22 shows an example in which two light-emitting units are stacked, but a structure in which three or more light-emitting units are stacked may also be employed. The first light-emitting unit 501c includes a hole injection layer 111c, a first hole transport layer 112c_1, a first light-emitting layer 113c_1, and a first electron transport layer 114c_1. The intermediate layer 116c includes a P-type layer 117c, an electron relay layer 118c, and an N-type layer 119c. Regardless of the presence or absence of the electron relay layer 118c. The second light-emitting unit 502c includes a second hole transport layer 112c_2, a second light-emitting layer 113c_2, a second electron transport layer 114c_2, and an electron injection layer 115c.

[0191] The light-emitting device 130d includes an organic compound layer 103d between the first electrode 101d on the insulating layer 175 and the second electrode 102. The organic compound layer 103d has a structure in which the first light-emitting unit 501d and the second light-emitting unit 502d are stacked with the intermediate layer 116d therebetween. Note that FIG. 22 shows an example in which two light-emitting units are stacked, but a structure in which three or more light-emitting units are stacked may also be employed. The first light-emitting unit 501d includes a hole injection layer 111d, a first hole transport layer 112d_1, a first light-emitting layer 113d_1, and a first electron transport layer 114d_1. The intermediate layer 116d includes a P-type layer 117d, an electron relay layer 118d, and an N-type layer 119d. Regardless of the presence or absence of the electron relay layer 118d. The second light-emitting unit 502d includes a second hole transport layer 112d_2, a second light-emitting layer 113d_2, a second electron transport layer 114d_2, and an electron injection layer 115d.

[0192] In the light-emitting devices 130c and 130d, the second electron transport layer 114c_1, the electron injection layer 115c, the second electron transport layer 114d_1, and the electron injection layer 115d preferably have the structures described in Embodiment 1.

[0193] The second electrode 102 is preferably a continuous layer shared by the light-emitting devices 130c and 130d. In addition, since the organic compound layer 103c and the organic compound layer 103d are processed by photolithography after forming the electron injection layer 115c and after forming the electron injection layer 115d, respectively, they are independent of each other. In addition, the end portions (contours) of the organic compound layer 103c are processed by photolithography, so they are substantially aligned in the direction perpendicular to the substrate. In addition, the end portions (contours) of the organic compound layer 103d are processed by photolithography, so they are substantially aligned in the direction perpendicular to the substrate.

[0194] In addition, due to processing by photolithography, there is a gap d between the organic compound layer 103c and the organic compound layer 103d. In addition, by processing the EL layer by photolithography, the distance between the first electrode 101c and the first electrode 101d can be made smaller than that distance during mask evaporation, and it can be made 2 μm or more and 5 μm or less.

[0195] The structure of this embodiment can be used in appropriate combination with other structures.

[0196] (Embodiment 2) As Figure 2A and Figure 2B shown, a light-emitting device is constituted by forming a plurality of the light-emitting devices 130 described in the above embodiments on the insulating layer 175. In this embodiment, a light-emitting device according to one aspect of the present invention will be described in detail.

[0197] The light-emitting device 1000 includes a pixel portion 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 includes a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0198] In this specification and the like, sometimes, for example, the name sub-pixel 110 is used to describe the common content among the sub-pixel 110R, the sub-pixel 110G, and the sub-pixel 110B. In addition, regarding the constituent elements distinguished by letters, sometimes the symbols omitting the letters are used to describe the common content among the constituent elements.

[0199] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. Thus, an image can be displayed on the pixel portion 177. Note that, in the present embodiment, the sub-pixels of three colors, red (R), green (G), and blue (B), are taken as an example for description, but the present invention is not limited to this structure. That is to say, sub-pixels of other colors can also be combined. For example, the number of sub-pixels is not limited to three, and may also be four or more. As four sub-pixels, for example, there can be cited: sub-pixels of four colors, R, G, B, and white (W); sub-pixels of four colors, R, G, B, and Y; and four sub-pixels of R, G, B, and infrared light (IR); and so on.

[0200] In this specification and the like, the row direction is sometimes denoted as the X direction and the column direction is denoted as the Y direction. The X direction intersects the Y direction, for example, perpendicularly.

[0201] In Figure 2A In the example shown, sub-pixels of different colors are arranged and configured in the X direction, and sub-pixels of the same color are arranged and configured in the Y direction. Note that sub-pixels of different colors can also be arranged and configured in the Y direction, and sub-pixels of the same color can also be arranged and configured in the X direction.

[0202] A connection portion 140 and a region 141 may also be provided outside the pixel portion 177. For example, the region 141 is preferably provided between the pixel portion 177 and the connection portion 140. An organic compound layer 103 is provided in the region 141. In addition, a conductive layer 151C is provided in the connection portion 140.

[0203] In the example shown in FIG. 2, the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but there is no particular limitation on the positions of the region 141 and the connection portion 140. In addition, the region 141 and the connection portion 140 may be one or more.

[0204] Figure 2B Is an example of a cross-sectional view along the Figure 2A dashed line A1 - A2 in. As Figure 2A shown, the light-emitting device 1000 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is preferably provided on a substrate (not shown). The insulating layer 175, the insulating layer 174, and the insulating layer 173 are provided with openings reaching the conductive layer 172, and plugs 176 are provided in such a way as to be embedded in the openings.

[0205] In the pixel portion 177, a light-emitting device 130 is provided on an insulating layer 175 and a plug 176. In addition, a protective layer 131 is provided so as to cover the light-emitting device 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. Further, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 may be provided between adjacent light-emitting devices 130.

[0206] Figure 2B A cross-section showing a plurality of inorganic insulating layers 125 and a plurality of insulating layers 127 is shown, but when looking down on the light-emitting device 1000, the inorganic insulating layer 125 and the insulating layer 127 are preferably formed as continuous single layers, respectively. That is to say, the insulating layer 127 is preferably an insulating layer having an opening portion on the first electrode.

[0207] Figure 2B The light-emitting devices 130R, 130G, and 130B are shown as the light-emitting device 130. The light-emitting devices 130R, 130G, and 130B emit light of mutually different colors. For example, the light-emitting device 130R may emit red light, the light-emitting device 130G may emit green light, and the light-emitting device 130B may emit blue light. In addition, the light-emitting device 130R, 130G, or 130B may also emit other visible light or infrared light.

[0208] Note that the organic compound layer 103 includes at least a light-emitting layer and an electron injection layer, and may include other functional layers (such as a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer). In addition, a part of the organic compound layer 103 may be formed as a common layer. As the common layer, an electron transport layer or an electron injection layer may be used. When using them as a common layer, after forming the light-emitting layer, the common layer is processed by photolithography, and the layer to be deposited (electron transport layer, electron injection layer) is deposited after the processing.

[0209] A light-emitting device according to one embodiment of the present invention may have, for example, a top emission structure that emits light in a direction opposite to the substrate on which the light-emitting device is formed. In addition, a light-emitting device according to one embodiment of the present invention may also have a bottom emission structure.

[0210] The light-emitting device 130R has the structure as shown in Embodiment 1. The light-emitting device 130R includes a first electrode (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, and a second electrode (common electrode) 102 on the organic compound layer 103R.

[0211] Here, the light-emitting device 130 has the structure as shown in Embodiment 1. The light-emitting device 130 includes a first electrode (pixel electrode) composed of a conductive layer 151 and a conductive layer 152, an organic compound layer 103 on the first electrode, and a second electrode (common electrode) 102 on the organic compound layer 103G.

[0212] One of the pixel electrode and the common electrode included in the light-emitting device is used as the anode, and the other is used as the cathode. Hereinafter, unless otherwise specified, a case where the pixel electrode is used as the anode and the common electrode is used as the cathode will be described.

[0213] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are each formed independently in an island shape for each light-emitting color. By setting the organic compound layer 103 in an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can also be suppressed in the high-definition light-emitting device. Thereby, crosstalk can be prevented to realize a light-emitting device with extremely high contrast. In particular, a light-emitting device with high current efficiency at low brightness can be realized.

[0214] The organic compound layer 103 can also be provided so as to cover the top surface and the side surface of the first electrode (pixel electrode) of the light-emitting device 130. Thereby, it is easier to increase the aperture ratio of the light-emitting device 1000 compared with a structure in which the end portion of the organic compound layer 103 is located inside the end portion of the pixel electrode. In addition, by covering the side surface of the pixel electrode of the light-emitting device 130 with the organic compound layer 103, contact between the pixel electrode and the second electrode 102 can be suppressed, so that short circuit of the light-emitting device 130 can be suppressed. In addition, the distance between the light-emitting region (i.e., the region overlapping with the pixel electrode) of the organic compound layer 103 and the end portion of the organic compound layer 103 can be increased. And, since the end portion of the organic compound layer 103 may be damaged by processing, by using the region far from the end portion of the organic compound layer 103 as the light-emitting region, the reliability of the light-emitting device 130 can be improved.

[0215] In addition, in the light-emitting device according to one aspect of the present invention, the first electrode (pixel electrode) of the light-emitting device may also have a stacked structure. For example, in Figure 2B the example shown, the first electrode of the light-emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152.

[0216] For example, when the light-emitting device 1000 has a top-emission structure, in the pixel electrode of the light-emitting device 130, preferably, the conductive layer 151 is a layer with a high visible light reflectance, and the conductive layer 152 is a layer with visible light transmissivity and a large work function. The higher the visible light reflectance of the pixel electrode, the higher the extraction efficiency of the light emitted by the organic compound layer 103 can be. In addition, when the pixel electrode is used as an anode, the larger the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. Therefore, by making the pixel electrode of the light-emitting device 130 have a stacked structure of a conductive layer 151 with a high visible light reflectance and a conductive layer 152 with a large work function, the light-emitting device 130 can be a light-emitting device with high light extraction efficiency and low driving voltage.

[0217] Specifically, the visible light reflectance of the conductive layer 151 is preferably, for example, 40% or more and 100% or less, more preferably 70% or more and 100% or less. In addition, when the conductive layer 152 is an electrode with visible light transmissivity, the visible light transmittance is preferably, for example, 40% or more.

[0218] In addition, when removing the film deposited after forming the pixel electrode having a stacked structure by a wet etching method or the like, the chemical solution used for etching sometimes infiltrates into the structure. When the infiltrated chemical solution contacts the pixel electrode, sometimes galvanic corrosion or the like occurs between the multiple layers constituting the pixel electrode, resulting in deterioration of the pixel electrode.

[0219] In view of this, it is preferable to form the conductive layer 152 so as to cover the top surface and side surfaces of the conductive layer 151. By covering the conductive layer 151 with the conductive layer 152, the infiltrated chemical solution does not contact the conductive layer 151, and galvanic corrosion in the pixel electrode can be suppressed. Therefore, the light-emitting device 1000 can be manufactured by a method with a high yield, and thus an inexpensive light-emitting device can be realized. In addition, the occurrence of defects in the light-emitting device 1000 can be suppressed, so the light-emitting device 1000 can be a highly reliable light-emitting device.

[0220] As the conductive layer 151, for example, a metal material can be used. Specifically, for example, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc., and alloys obtained by appropriately combining them can also be used.

[0221] As the conductive layer 152, an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon is preferably used. In particular, the indium tin oxide containing silicon has a relatively large work function, for example, 4.0 eV or more, so it can be suitably used as the conductive layer 152.

[0222] In addition, each of the conductive layer 151 and the conductive layer 152 may also have a laminated structure including a plurality of layers containing different materials. In this case, the conductive layer 151 may also include a layer using a material such as a conductive oxide that can be used for the conductive layer 152, and the conductive layer 152 may also include a layer using a material such as a metal material that can be used for the conductive layer 151. For example, when the conductive layer 151 has a laminated structure of two or more layers, the layer in contact with the conductive layer 152 may be a layer containing the same material as the layer in contact with the conductive layer 151 in the conductive layer 152.

[0223] The end of the conductive layer 151 preferably has a tapered shape. Specifically, the end of the conductive layer 151 preferably has a tapered shape with a taper angle less than 90°. At this time, the conductive layer 152 provided along the side surface of the conductive layer 151 also has a tapered shape. By making the end of the conductive layer 152 have a tapered shape, the coverage of the organic compound layer 103 provided along the side surface of the conductive layer 152 can be improved.

[0224] In addition, when the conductive layer 151 or the conductive layer 152 has a laminated structure, preferably, at least one of the laminated layers has a tapered shape. In addition, in the laminated structure constituting each conductive layer, different tapered shapes may be provided for each layer.

[0225] Figure 3A It is a view when the conductive layer 151 has a laminated structure including a plurality of layers containing different materials. As Figure 3A shown, the conductive layer 151 includes a conductive layer 151_1, a conductive layer 151_2 on the conductive layer 151_1, and a conductive layer 151_3 on the conductive layer 151_2. That is, Figure 3A the shown conductive layer 151 has a three-layer laminated structure. Thus, when the conductive layer 151 has a laminated structure of a plurality of layers, it is only necessary to make the visible light reflectance of at least one of the layers constituting the conductive layer 151 higher than the visible light reflectance of the conductive layer 152.

[0226] In Figure 3AIn the example shown, the conductive layer 151_2 is sandwiched between the conductive layer 151_1 and the conductive layer 151_3. The conductive layer 151_1 and the conductive layer 151_3 are preferably made of materials that are less likely to deteriorate compared to the conductive layer 151_2. For example, the conductive layer 151_1 can be made of a material that is less likely to undergo migration due to contact with the insulating layer 175 compared to the conductive layer 151_2. In addition, the conductive layer 151_3 can be made of a material that is less likely to be oxidized compared to the conductive layer 151_2, and the resistivity of its oxide is lower than that of the oxide of the material used for the conductive layer 151_3.

[0227] As described above, by adopting the structure in which the conductive layer 151_2 is sandwiched between the conductive layer 151_1 and the conductive layer 151_3, the range of material selection for the conductive layer 151_2 can be expanded. Thus, for example, the conductive layer 151_2 can be made into a layer with a higher visible light reflectance than at least one of the conductive layer 151_1 and the conductive layer 151_3. For example, aluminum can be used as the conductive layer 151_2. In addition, an aluminum-containing alloy can also be used as the conductive layer 151_2. In addition, titanium can be used as the conductive layer 151_1. Although the visible light reflectance of titanium is lower than that of aluminum, it is less likely to undergo migration compared to aluminum even when in contact with the insulating layer 175. And, titanium can be used as the conductive layer 151_3. Although the visible light reflectance of titanium is lower than that of aluminum, it is less likely to be oxidized compared to aluminum and the resistivity of its oxide is lower than that of aluminum oxide.

[0228] In addition, silver or a silver-containing alloy can also be used as the conductive layer 151_3. Silver has the characteristic of having a higher visible light reflectance than titanium. Moreover, silver has the following characteristics: it is less likely to be oxidized compared to aluminum, and the resistivity of silver oxide is lower than that of aluminum oxide. Thus, when silver or a silver-containing alloy is used as the conductive layer 151_3, the resistance increase of the pixel electrode due to the oxidation of the conductive layer 151_2 can be suppressed while appropriately increasing the visible light reflectance of the conductive layer 151. Here, as the silver-containing alloy, for example, an alloy of silver, palladium, and copper (Ag-Pd-Cu, also denoted as APC) can be used. In addition, when silver or a silver-containing alloy is used as the conductive layer 151_3 and aluminum is used as the conductive layer 151_2, the visible light reflectance of the conductive layer 151_3 can be increased compared to that of the conductive layer 151_2. Here, silver or a silver-containing alloy can also be used as the conductive layer 151_2. In addition, silver or a silver-containing alloy can also be used as the conductive layer 151_1.

[0229] On the other hand, the etch processability of a film using titanium is superior to that of a film using silver. Therefore, by using titanium as the conductive layer 151_3, the conductive layer 151_3 can be easily formed. In addition, the etch processability of a film using aluminum is also superior to that of a film using silver.

[0230] Thus, by making the conductive layer 151 have a stacked structure of multiple layers, the characteristics of the light-emitting device can be improved. For example, the light-emitting device 1000 can be made into a light-emitting device with high light extraction efficiency and high reliability.

[0231] Here, when the microcavity structure is adopted for the light-emitting device 130, by using silver or a silver-containing alloy, which is a material with high visible light reflectivity, as the conductive layer 151_3, the light extraction efficiency of the light-emitting device 1000 can be appropriately improved.

[0232] In addition, as Figure 3A shown, depending on the material selection or processing method of the conductive layer 151, sometimes the side surface of the conductive layer 151_2 is located inside the side surfaces of the conductive layer 151_1 and the conductive layer 151_3 to form a protrusion. Therefore, there is a concern that the coverage of the conductive layer 152 over the conductive layer 151 is reduced and the conductive layer 152 is disconnected.

[0233] In view of this, it is preferable to provide the insulating layer 156 as Figure 3A shown. Figure 3A An example is shown in which the insulating layer 156 is provided on the conductive layer 151_1 so as to have a region overlapping with the side surface of the conductive layer 151_2. Thereby, the disconnection or thinning of the conductive layer 152 due to the protrusion can be suppressed, and thus the connection failure or the increase in the driving voltage can be suppressed.

[0234] Note that although Figure 3A a structure in which the entire side surface of the conductive layer 151_2 is covered with the insulating layer 156 is shown, a part of the side surface of the conductive layer 151_2 may not be covered with the insulating layer 156. The same applies to the pixel electrode having the following structure, and a part of the side surface of the conductive layer 151_2 may not be covered with the insulating layer 156.

[0235] In addition, as Figure 3A shown, the insulating layer 156 preferably has a curved surface. Thereby, for example, disconnection in the conductive layer 152 covering the insulating layer 156 can be suppressed as compared with the case where the side surface of the insulating layer 156 is perpendicular (parallel to the Z direction). In addition, when the side surface of the insulating layer 156 has a tapered shape, specifically, a tapered shape with a taper angle less than 90°, for example, disconnection in the conductive layer 152 covering the insulating layer 156 can be suppressed as compared with the case where the side surface of the insulating layer 156 is perpendicular. Thereby, the light-emitting device 1000 can be manufactured by a method with a high yield. In addition, the occurrence of defects can be suppressed, and thus a light-emitting device 1000 with high reliability can be realized.

[0236] Note that one aspect of the present invention is not limited to this. For example, Figures 3B to 3D another structure of the first electrode 101 is shown.

[0237] Figure 3B The structure is as follows: In the first electrode 101 of FIG. 1, the insulating layer 156 covers the sides of the conductive layer 151_1, the conductive layer 151_2, and the conductive layer 151_3 in addition to the sides of the conductive layer 151_2.

[0238] Figure 3C The structure in which the insulating layer 156 is not provided in the first electrode 101 of FIG. 1 is shown.

[0239] Figure 3D The following structure is shown: In the first electrode 101 of FIG. 1, the conductive layer 151 does not have a stacked structure and the conductive layer 152 has a stacked structure.

[0240] The conductive layer 152_1 is a layer having, for example, higher adhesion to the conductive layer 152_2 than the insulating layer 175. As the conductive layer 152_1, for example, an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon is preferably used. Thereby, film peeling of the conductive layer 152_2 can be suppressed. In addition, the conductive layer 152_2 can be made not to contact the insulating layer 175.

[0241] The conductive layer 152_2 is a layer having a higher visible light reflectance (for example, reflectance of light having a specified wavelength in the range of 400 nm or more and less than 750 nm) than the conductive layer 151, the conductive layer 152_1, and the conductive layer 152_2. The visible light reflectance of the conductive layer 152_2 can be, for example, 70% or more and 100% or less, preferably 80% or more and 100% or less, more preferably 90% or more and 100% or less. In addition, for example, silver or a silver-containing alloy can be used as the conductive layer 152_2. As the silver-containing alloy, for example, an alloy of silver, palladium, and copper (APC) can be cited. Thereby, the light-emitting device 1000 can be made a light-emitting device with high light extraction efficiency. Note that a metal other than silver can also be used as the conductive layer 152_2.

[0242] When the conductive layer 151 and the conductive layer 152 are used as anodes, the conductive layer 152_1 is preferably a layer having a large work function. The conductive layer 152_3 is, for example, a layer having a larger work function than the conductive layer 152_2. As the conductive layer 152_3, for example, the same material as that which can be used for the conductive layer 152_1 can be used. For example, the same material can be used for the conductive layer 152_1 and the conductive layer 152_3.

[0243] Note that when the conductive layer 151 and the conductive layer 152 are used as the cathode, the conductive layer 152_1 is preferably a layer having a small work function. The conductive layer 152_3 is, for example, a layer having a work function smaller than that of the conductive layer 152_2.

[0244] In addition, the conductive layer 152_3 is preferably a layer having a high visible light transmittance (for example, the transmittance of light at a specified wavelength in the range of 400 nm or more and less than 750 nm). For example, the visible light transmittance of the conductive layer 152_3 is preferably higher than the visible light transmittances of the conductive layer 151 and the conductive layer 152_2. For example, the visible light transmittance of the conductive layer 152_3 may be 60% or more and 100% or less, preferably 70% or more and 100% or less, and more preferably 80% or more and 100% or less. Thereby, the light emitted from the organic compound layer 103 and absorbed by the conductive layer 152_3 can be reduced. In addition, as described above, the conductive layer 152_2 under the conductive layer 152_3 may be a layer having a high visible light reflectance. Therefore, a light-emitting device 1000 with high light extraction efficiency can be realized.

[0245] Next, an example of a method for manufacturing the light-emitting device 1000 having the structure shown in FIG. 2 will be described with reference to FIGS. 4 to 10.

[0246] [Example of Manufacturing Method 1] The thin films (insulating films, semiconductor films, conductive films, etc.) constituting the light-emitting device can be formed by a sputtering method, a chemical vapor deposition (CVD: Chemical Vapor Deposition) method, a vacuum evaporation method, a pulsed laser deposition (PLD: Pulsed Laser Deposition) method, an ALD method, or the like. As the CVD method, there are a plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced CVD) method and a thermal CVD method. In addition, as one of the thermal CVD methods, there is a metal organic chemical vapor deposition (MOCVD: Metal Organic CVD) method.

[0247] In addition, the thin films (insulating films, semiconductor films, conductive films, etc.) constituting the light-emitting device can be formed by wet deposition methods such as a spin coating method, a dipping method, a spraying method, an inkjet method, a dispenser method, a screen printing method, an offset printing method, a doctor knife method, a slot die coating method, a roll coating method, a curtain coating method, or a blade coating method.

[0248] In particular, when manufacturing a light-emitting device, vacuum processes such as evaporation and solution processes such as spin coating and inkjet printing can be utilized. As evaporation methods, physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam evaporation, molecular beam epitaxy, and vacuum evaporation, and chemical vapor deposition (CVD) methods can be cited. In particular, methods such as evaporation (e.g., vacuum evaporation), coating (e.g., dip coating, dye coating, bar coating, spin coating, spray coating), and printing (e.g., inkjet printing, screen printing (stencil printing), offset printing (lithography), flexography (letterpress printing), gravure printing, or microcontact printing) can be used to form functional layers (such as a hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, and electron injection layer) included in the organic compound layer.

[0249] In addition, when processing a thin film constituting a light-emitting device, for example, photolithography can be used for processing. Alternatively, nanoimprinting, sandblasting, lift-off, etc. can also be used to process the thin film. In addition, island-shaped thin films can be directly formed by a deposition method using a masking mask such as a metal mask.

[0250] Typically, there are the following two methods of photolithography. One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching, for example, and removing the resist mask. The other is a method of depositing a photosensitive thin film and then performing exposure and development to process the thin film into a desired shape.

[0251] In the etching of a thin film, dry etching, wet etching, sandblasting, etc. can be used.

[0252] First, as Figure 4A shown, an insulating layer 171 is formed on a substrate (not shown). Next, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layer 172 and the conductive layer 179. Next, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0253] As the substrate, a substrate having at least heat resistance capable of withstanding subsequent heat treatment can be used. When an insulating substrate is used as the substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or an organic resin substrate can be used. In addition, a single-crystal semiconductor substrate or polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate made of silicon germanium, an SOI substrate, etc. can also be used.

[0254] Next, as Figure 4AAs shown, openings reaching the conductive layer 172 are formed in the insulating layer 175, insulating layer 174, and insulating layer 173. Then, a plug 176 is formed in such a way as to embed in the openings.

[0255] Then, as Figure 4A shown, a conductive film 151f that will later become the conductive layers 151R, 151G, 151B, and 151C is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed, for example, by sputtering or vacuum evaporation. Additionally, a metal material can be used as the conductive film 151f, for example.

[0256] Then, as Figure 4A shown, a resist mask 191 is formed on the conductive film 151f, for example. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0257] Then, as Figure 4B shown, for example, using an etching method, specifically a dry etching method, the conductive film 151f in the area that does not overlap with the resist mask 191 is removed. Note that in the case where the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer can also be removed by a wet etching method. Thereby, the conductive layer 151 is formed. Note that, for example, when a part of the conductive film 151f is removed by a dry etching method, recesses (also called depressions) sometimes form in the area of the insulating layer 175 that does not overlap with the conductive layer 151.

[0258] Then, as Figure 4C shown, the resist mask 191 is removed. The resist mask 191 can be removed, for example, by ashing using oxygen plasma. Or, oxygen gas and CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or a Group 18 element such as He can also be used. Or, the resist mask 191 can be removed by wet etching.

[0259] Then, as Figure 4D shown, an insulating film 156f that will later become the insulating layers 156R, 156G, 156B, and 156C is formed on the conductive layers 151R, 151G, 151B, 151C, and the insulating layer 175. The insulating film 156f can be formed, for example, by CVD method, ALD method, sputtering method, or vacuum evaporation method.

[0260] The insulating film 156f can be made of an inorganic material. As the insulating film 156f, for example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitrogen oxide insulating film can be used. For example, as the insulating film 156f, an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitrogen oxide insulating film containing silicon can be used. For example, silicon oxynitride can be used as the insulating film 156f.

[0261] Next, as Figure 4E shown, by processing the insulating film 156f, an insulating layer 156R, an insulating layer 156G, an insulating layer 156B, and an insulating layer 156C are formed. For example, by etching the top surface of the insulating film 156f substantially uniformly, the insulating layer 156 can be formed. The process of etching uniformly in this way for planarization is also called etch-back processing. In addition, the insulating layer 156 can also be formed by photolithography.

[0262] Next, as Figure 5A shown, a conductive film 152f that will later become the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the insulating layer 156C, and the insulating layer 175. Specifically, for example, the conductive film 152f is formed so as to cover the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 156C.

[0263] The conductive film 152f can be formed, for example, by sputtering or vacuum evaporation. In addition, the conductive film 152f can be formed by ALD. In addition, for example, a conductive oxide can be used as the conductive film 152f. Or, as the conductive film 152f, a laminated structure of a film using a metal material and a film using a conductive oxide on this film can be adopted. For example, as the conductive film 152f, a laminated structure of a film using titanium, silver, or a silver-containing alloy and a film using a conductive oxide on this film can be adopted.

[0264] Next, as Figure 5B shown, for example, the conductive film 152f is processed by photolithography, whereby the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C are formed. Specifically, for example, after forming a resist mask, a part of the conductive film 152f is removed by etching. The conductive film 152f can be removed, for example, by wet etching. Note that the conductive film 152f can also be removed by dry etching. Thus, a pixel electrode including the conductive layer 151 and the conductive layer 152 is formed.

[0265] Next, it is preferable to hydrophobize the conductive layer 152. Through the hydrophobization treatment, the surface state of the object to be treated can be changed from hydrophilic to hydrophobic, or the hydrophobicity of the surface of the object to be treated can be improved. By hydrophobizing the conductive layer 152, the adhesion between the conductive layer 152 and the organic compound layer 103 to be formed in the subsequent process can be improved to suppress film peeling. Note that the hydrophobization treatment may not be performed.

[0266] Next, as Figure 5C shown, an organic compound film 103Bf that will later become the organic compound layer 103B is formed on the conductive layer 152B, the conductive layer 152G, the conductive layer 152R, and the insulating layer 175.

[0267] In the present invention, the organic compound film 103Bf includes a plurality of organic compound layers each having at least one light-emitting layer. The specific content can refer to the structure of the light-emitting device 130 described in Embodiment 1. Alternatively, a structure in which a plurality of organic compound layers each having at least one light-emitting layer are stacked with an intermediate layer therebetween can also be adopted.

[0268] As Figure 5C shown, the organic compound film 103Bf is not formed on the conductive layer 152C. For example, by using a mask for defining the deposition range (also referred to as a region mask or a coarse metal mask, etc. to distinguish it from a fine metal mask), the organic compound film 103Bf can be deposited only in a desired region. By adopting a deposition process using a region mask and a processing process using a resist mask, a light-emitting device can be manufactured with a relatively simple process.

[0269] The organic compound film 103Bf can be formed, for example, by vapor deposition, and specifically, by vacuum vapor deposition. Alternatively, the organic compound film 103Bf can also be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0270] Next, as Figure 5D shown, a sacrificial film 158Bf that will later become the sacrificial layer 158B and a mask film 159Bf that will later become the mask layer 159B are sequentially formed on the organic compound film 103Bf.

[0271] The sacrificial film 158Bf and the mask film 159Bf can be formed, for example, by sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum vapor deposition. Alternatively, they can also be formed by the above-described wet deposition methods.

[0272] In addition, the sacrificial film 158Bf and the mask film 159Bf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Bf. The substrate temperature when forming the sacrificial film 158Bf and the mask film 159Bf is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, further preferably 100°C or lower, and even more preferably 80°C or lower.

[0273] Note that, in the present embodiment, an example in which the mask film is composed of a two-layer structure of the sacrificial film 158Bf and the mask film 159Bf is shown, but the mask film may have a single-layer structure or a stacked structure of three or more layers.

[0274] By providing a sacrificial layer on the organic compound film 103Bf, damage to the organic compound film 103Bf during the manufacturing process of the light-emitting device can be reduced, and the reliability of the light-emitting device can be improved.

[0275] As the sacrificial film 158Bf, a film with high resistance to the processing conditions of the organic compound film 103Bf is used, specifically, a film with a large etching selectivity ratio with respect to the organic compound film 103Bf. As the mask film 159Bf, a film with a large etching selectivity ratio with respect to the sacrificial film 158Bf is used.

[0276] As the sacrificial film 158Bf and the mask film 159Bf, a film that can be removed by wet etching is preferably used. By using wet etching, damage to the organic compound film 103Bf during the processing of the sacrificial film 158Bf and the mask film 159Bf can be reduced compared to the case of using dry etching.

[0277] When using wet etching, an acidic chemical solution is particularly preferably used. As the acidic chemical solution, a chemical solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed chemical solution of two or more acids (also referred to as a mixed acid) is preferably used.

[0278] As the sacrificial film 158Bf and the mask film 159Bf, for example, one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film can be used.

[0279] In addition, by using a film containing a material having ultraviolet light-shielding properties as the sacrificial film 158Bf and the mask film 159Bf, for example, ultraviolet light can be prevented from irradiating the organic compound layer during the exposure process. By suppressing damage to the organic compound layer caused by ultraviolet light, the reliability of the light-emitting device can be improved.

[0280] Note that the same effect is also produced when a film containing a material having ultraviolet light-shielding properties is used as the material of the inorganic insulating film 125f described later.

[0281] As the sacrificial film 158Bf and the mask film 159Bf, for example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metal materials can be used respectively. In particular, low melting point materials such as aluminum or silver are preferably used.

[0282] In addition, as the sacrificial film 158Bf and the mask film 159Bf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium-titanium oxide (In-Ti oxide), indium-tin-zinc oxide (In-Sn-Zn oxide), indium-titanium-zinc oxide (In-Ti-Zn oxide), indium-gallium-tin-zinc oxide (In-Ga-Sn-Zn oxide), or indium-tin oxide containing silicon can be used respectively.

[0283] Note that an element M (where M is one or more of aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) can be used instead of the above-mentioned gallium.

[0284] As the sacrificial film 158Bf and the mask film 159Bf, for example, semiconductor materials such as silicon or germanium are used. This has high affinity with the semiconductor manufacturing process, so it is preferred. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, non-metal materials such as carbon or their compounds can be used. In addition, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of them can be used. In addition, oxides containing the above metals such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0285] In addition, as the sacrificial film 158Bf and the mask film 159Bf, various inorganic insulating films can be used respectively. In particular, the adhesion of the oxide insulating film to the organic compound film 103Bf is higher than that of the nitride insulating film to the organic compound film 103Bf, so it is preferred. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, or silicon oxide can be used for the sacrificial film 158Bf and the mask film 159Bf respectively. As the sacrificial film 158Bf and the mask film 159Bf, an aluminum oxide film can be formed by ALD method respectively. By using the ALD method, the damage to the substrate (especially to the organic compound layer) can be reduced, so it is preferred.

[0286] As one or both of the sacrificial film 158Bf and the mask film 159Bf, an organic material can also be used. For example, as the organic material, a material that can be dissolved in a solvent that is at least chemically stable to the film located at the uppermost part of the organic compound layer 103Bf can be used. In particular, a material that can be dissolved in water or alcohol is preferably used. When depositing the above material, it is preferable to coat the material by a wet deposition method in a state where the material is dissolved in a solvent such as water or alcohol, and then perform a heat treatment for evaporating the solvent. At this time, it is preferable to perform the heat treatment in a reduced-pressure atmosphere, whereby the solvent can be removed at a low temperature and in a short time, and the thermal damage to the organic compound film 103Bf can be reduced.

[0287] As the sacrificial film 158Bf and the mask film 159Bf, organic resins such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, a polyamide resin soluble in alcohol, or a fluororesin such as a perfluoropolymer can also be used respectively.

[0288] For example, as the sacrificial film 158Bf, an organic film (for example, a PVA film) formed by any one of a vapor deposition method and the above wet deposition method can be used, and as the mask film 159Bf, an inorganic film (for example, a silicon nitride film) formed by a sputtering method can be used.

[0289] Next, as shown in Figure 5D a resist mask 190B is formed on the mask film 159Bf. The resist mask 190B can be formed by coating a photosensitive material (photoresist) and then performing exposure and development.

[0290] The resist mask 190B can use a positive resist material or a negative resist material.

[0291] The resist mask 190B is formed at a position overlapping with the conductive layer 152B. The resist mask 190B is preferably also provided at a position overlapping with the conductive layer 152C. Thereby, damage to the conductive layer 152C during the manufacturing process of the light-emitting device can be suppressed. Note that the resist mask 190B may not be provided on the conductive layer 152C. In addition, as shown in the cross-sectional view along B1 - B2 in Figure 5C , the resist mask 190B is preferably provided so as to cover the end of the organic compound film 103Bf to the end of the conductive layer 152C (the end on the organic compound film 103Bf side).

[0292] Next, as shown in Figure 5EAs shown, a part of the mask film 159Bf is removed using the resist mask 190B to form the mask layer 159B. The mask layer 159B remains on the conductive layer 152B and the conductive layer 152C. Then, the resist mask 190B is removed. Next, the mask layer 159B is used as a mask (also referred to as a hard mask) to remove a part of the sacrificial film 158Bf to form the sacrificial layer 158B.

[0293] The sacrificial film 158Bf and the mask film 159Bf can be processed by a wet etching method or a dry etching method, respectively. The processing of the sacrificial film 158Bf and the mask film 159Bf is preferably performed by wet etching.

[0294] By using the wet etching method, compared with the case of using the dry etching method, the damage to the organic compound film 103Bf during the processing of the sacrificial film 158Bf and the mask film 159Bf can be reduced. When using the wet etching method, for example, it is preferable to use a developing solution, an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a liquid medicine such as a mixed liquid thereof.

[0295] When processing the mask film 159Bf, the organic compound film 103Bf is not exposed, so the range of choices for the processing method is wider compared with the case of processing the sacrificial film 158Bf. Specifically, when processing the mask film 159Bf, even if an oxygen-containing gas is used as the etching gas, the deterioration of the organic compound film 103Bf can be further suppressed.

[0296] When using the wet etching method, it is particularly preferable to use an acidic liquid medicine. As the acidic liquid medicine, a liquid medicine containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed liquid medicine of two or more acids (also referred to as a mixed acid) can be used.

[0297] In addition, when using the dry etching method in the processing of the sacrificial film 158Bf, the deterioration of the organic compound film 103Bf can be suppressed by not using an oxygen-containing gas as the etching gas. In the case of using the dry etching method, for example, it is preferable to use a gas containing CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or a Group 18 element gas such as He as the etching gas.

[0298] The resist mask 190B can be removed by the same method as the resist mask 191. At this time, since the sacrificial film 158Bf is located on the outermost surface and the organic compound film 103Bf is not exposed, damage to the organic compound film 103Bf during the removal process of the resist mask 190B can be suppressed. In addition, the range of choices for the removal method of the resist mask 190B can be expanded.

[0299] Next, as Figure 5EAs shown, the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as hard masks to remove a part of the organic compound film 103Bf to form the organic compound layer 103B.

[0300] Thus, as Figure 5E shown, a stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. In addition, the conductive layer 152G and the conductive layer 152B are exposed.

[0301] The processing of the organic compound film 103Bf can use dry etching or wet etching. For example, when processing using the dry etching method, an etching gas containing oxygen can be used. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low-power conditions while maintaining a sufficient etching rate. Therefore, damage to the organic compound film 103Bf can be suppressed. Also, defects such as the adhesion of reaction products generated during etching can be suppressed.

[0302] Alternatively, an etching gas not containing oxygen can be used. For example, by using an etching gas not containing oxygen, deterioration of the organic compound film 103Bf can be suppressed.

[0303] As described above, in one aspect of the present invention, the mask layer 159B is formed by forming a resist mask 190B on the mask film 159Bf and removing a part of the mask film 159Bf using the resist mask 190B. Then, the organic compound layer 103B is formed by using the mask layer 159B as a mask to remove a part of the organic compound film 103Bf. Therefore, it can be said that the organic compound layer 103B is formed by processing the organic compound film 103Bf using photolithography. Alternatively, a part of the organic compound film 103Bf can be removed using the resist mask 190B. Then, the resist mask 190B can also be removed.

[0304] Here, a hydrophobization treatment of the conductive layer 152G can be performed as needed. When processing the organic compound film 103Bf, for example, the surface state of the conductive layer 152G sometimes becomes hydrophilic. By performing the hydrophobization treatment of the conductive layer 152G, for example, the adhesion between the conductive layer 152G and a layer (here, the organic compound layer 103G) to be formed in a later process can be improved to suppress film peeling.

[0305] Next, as Figure 6A shown, an organic compound film 103Gf that will later become the organic compound layer 103G is formed on the conductive layer 152G, the conductive layer 152R, the mask layer 159B, and the insulating layer 175.

[0306] The organic compound film 103Gf can be formed in the same manner as the method that can be used when forming the organic compound film 103Bf. Additionally, the organic compound film 103Gf can have the same structure as the organic compound film 103Bf.

[0307] Next, as Figure 6B shown, a sacrificial film 158Gf that will later become the sacrificial layer 158G and a mask film 159Gf that will later become the mask layer 159G are sequentially formed on the organic compound film 103Gf and the mask layer 159B. Then, a resist mask 190G is formed. The materials and formation methods of the sacrificial film 158Gf and the mask film 159Gf are the same as the conditions that can be used for the sacrificial film 158Bf and the mask film 159Bf. The materials and formation methods of the resist mask 190G are the same as the conditions that can be applied to the resist mask 190B.

[0308] The resist mask 190G is disposed at a position overlapping with the conductive layer 152G.

[0309] Next, as Figure 6C shown, a part of the mask film 159Gf is removed using the resist mask 190G to form the mask layer 159G. The mask layer 159G remains on the conductive layer 152G. Then, the resist mask 190G is removed. Next, using the mask layer 159G as a mask, a part of the sacrificial film 158Gf is removed, thereby forming the sacrificial layer 158G. Next, the organic compound film 103Gf is processed to form the organic compound layer 103G. For example, using the mask layer 159G and the sacrificial layer 158G as a hard mask, a part of the organic compound film 103Gf is removed to form the organic compound layer 103G.

[0310] Thus, as Figure 6C shown, a stacked structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G. In addition, the mask layer 159B and the conductive layer 152R are exposed.

[0311] Additionally, for example, a hydrophobization treatment of the conductive layer 152R can also be performed.

[0312] Next, as Figure 7A shown, an organic compound film 103Rf that will later become the organic compound layer 103R is formed on the conductive layer 152R, the mask layer 159G, the mask layer 159B, and the insulating layer 175.

[0313] The organic compound film 103Rf can be formed in the same manner as the method that can be used when forming the organic compound film 103Gf. Additionally, the organic compound film 103Rf can have the same structure as the organic compound film 103Gf.

[0314] Next, as Figure 7B and Figure 7C shown, a sacrificial layer 158 is formed from a sacrificial film 158Rf, a mask layer 159R is formed from a mask film 159Rf, or an organic compound layer 103R is formed from an organic compound film 103Rf. Regarding the formation methods of the sacrificial layer 158R, the mask layer 159R, and the organic compound layer 103R, reference can be made to the description of the organic compound layer 103G.

[0315] Note that the sides of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R are each preferably perpendicular or substantially perpendicular to the formation surface. For example, the angle formed by the formation surface and these sides is preferably 60 degrees or more and 90 degrees or less.

[0316] As described above, the distance between two adjacent organic compound layers among the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R formed by photolithography can be reduced to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, for example, this distance can be defined based on the distance between the opposite ends of two adjacent organic compound layers among the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. In this way, by reducing the distance between the island-shaped organic compound layers, a light-emitting device with high clarity and a large aperture ratio can be provided. In addition, the distance between the first electrodes of adjacent light-emitting devices can be reduced, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less. In addition, the distance between the first electrodes of adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0317] Next, as Figure 8A shown, the mask layer 159B, the mask layer 159G, and the mask layer 159R are removed.

[0318] Note that although the case of removing the mask layer 159B, the mask layer 159G, and the mask layer 159R is described as an example in this embodiment, the mask layer 159B, the mask layer 159G, and the mask layer 159R may not be removed. For example, when the mask layer 159B, the mask layer 159G, and the mask layer 159R contain the above-mentioned material having ultraviolet light-shielding properties, by not removing the above-mentioned mask layer and proceeding to the next process, the organic compound layer can be protected from light irradiation (including illumination light).

[0319] As the mask layer removal process, the same method as the mask layer processing process can be used. In particular, by using a wet etching method, compared with the case of using a dry etching method, the damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R during the removal of the mask layer can be reduced.

[0320] Alternatively, the mask layer can also be removed by dissolving it in a solvent such as water or alcohol. Examples of the alcohol include ethanol, methanol, isopropyl alcohol (IPA), or glycerin.

[0321] After removing the mask layer, a drying process can also be performed to remove the water contained in the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, as well as the water adsorbed on the surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. For example, a heat treatment can be performed in an inert atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. By using a reduced-pressure atmosphere, drying can be performed at a lower temperature, so it is preferred.

[0322] Next, as Figure 8B shown, an inorganic insulating film 125f that will later become the inorganic insulating layer 125 is formed so as to cover the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R.

[0323] As described later, an insulating film that will later become the insulating layer 127 is formed in contact with the top surface of the inorganic insulating film 125f. Therefore, the top surface of the inorganic insulating film 125f preferably has high affinity with the material of the insulating film that will become the insulating layer 127 (for example, a photosensitive resin composition containing an acrylic resin). To improve this affinity, the top surface of the inorganic insulating film 125f can be surface-treated. Specifically, it is preferred to hydrophobize (or increase its hydrophobicity) the top surface of the inorganic insulating film 125f. For example, it is preferred to perform treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the top surface of the inorganic insulating film 125f in this way, the insulating film 127f can be formed with high adhesion.

[0324] Next, as Figure 8C shown, an insulating film 127f that will later become the insulating layer 127 is formed on the inorganic insulating film 125f.

[0325] The inorganic insulating film 125f and the insulating film 127f are preferably deposited by a formation method that causes less damage to the organic compound layers 103B, 103G, and 103R. In particular, since the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layers 103B, 103G, and 103R, the inorganic insulating film 125f is preferably deposited by a formation method that causes less damage to the organic compound layers 103B, 103G, and 103R than when depositing the insulating film 127f.

[0326] In addition, the inorganic insulating film 125f and the insulating film 127f are each formed at a temperature lower than the heat-resistant temperature of the organic compound layers 103B, 103G, and 103R. By increasing the substrate temperature during deposition, an inorganic insulating film 125f with a low impurity concentration and high barrier properties against at least one of water and oxygen can be formed even if its thickness is thin.

[0327] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower.

[0328] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0329] The inorganic insulating film 125f is preferably formed by the ALD method, for example. By using the ALD method, deposition damage can be reduced, and a film with high coverage can be deposited, so it is preferable. As the inorganic insulating film 125f, it is preferable to form an alumina film by the ALD method, for example.

[0330] In addition to this, the inorganic insulating film 125f can also be formed by a sputtering method, a CVD method, or a PECVD method with a deposition rate higher than that of the ALD method. Thereby, a light-emitting device with high reliability can be manufactured with high productivity.

[0331] The insulating film 127f is preferably formed by the above wet deposition method. The insulating film 127f is preferably formed by spin coating using a photosensitive material, for example, and more specifically, it is preferably formed using a photosensitive resin composition containing an acrylic resin.

[0332] For example, it is preferable to form the insulating film 127f using a resin composition containing a polymer, an acid generator, and a solvent. The polymer is formed using one or more monomers and has a structure in which one or more structural units (also referred to as constituent units) are repeated regularly or irregularly. As the acid generator, one or both of a compound that generates an acid upon irradiation with light and a compound that generates an acid upon heating can be used. The resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion promoter, a surfactant, and an antioxidant.

[0333] In addition, it is preferable to perform a heat treatment (also referred to as pre-baking) after forming the insulating film 127f. This heat treatment is performed at a temperature lower than the heat-resistant temperature of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. The substrate temperature during the heat treatment is preferably 50°C or higher and 200°C or lower, more preferably 60°C or higher and 150°C or lower, and further preferably 70°C or higher and 120°C or lower. Thereby, the solvent in the insulating film 127f can be removed.

[0334] Next, exposure is performed to sensitize a part of the insulating film 127f with visible light or ultraviolet light. Here, in the case where a positive photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will not be formed in the subsequent process. The insulating layer 127 is formed in the region sandwiched by any two of the conductive layers 152B, the conductive layer 152G, and the conductive layer 152R and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layers 152B, the conductive layer 152G, the conductive layer 152R, and the conductive layer 152C. Note that in the case where a negative photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will be formed.

[0335] By means of the exposed region of the insulating film 127f, the width of the insulating layer 127 to be formed later can be controlled. In the present embodiment, processing is performed such that the insulating layer 127 has a portion overlapping with the top surface of the conductive layer 151.

[0336] Here, by providing an oxygen barrier insulating layer (such as an alumina film or the like) as one or both of the sacrificial layers 158 (sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R) and the inorganic insulating film 125f, oxygen diffusion into the organic compound layers 103B, 103G, and 103R can be suppressed. When light (visible light or ultraviolet light) irradiates the organic compound layer, the organic compounds contained in the organic compound layer sometimes become excited states and promote reactions with oxygen in the atmosphere. More specifically, when light (visible light or ultraviolet light) irradiates the organic compound layer in an oxygen-containing atmosphere, oxygen may bond to the organic compounds contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, oxygen in the atmosphere can be suppressed from bonding to the organic compounds contained in the organic compound layer.

[0337] Next, as Figure 9A shown, development is performed to remove the exposed regions in the insulating film 127f to form the insulating layer 127a. The insulating layer 127a is formed in the regions sandwiched by any two of the conductive layers 152B, 152G, and 152R and in the region surrounding the conductive layer 152C. Here, when an acrylic resin is used for the insulating film 127f, an alkaline solution such as TMAH can be used as the developer.

[0338] Next, as Figure 9B shown, an etching process is performed using the insulating layer 127a as a mask to remove a part of the inorganic insulating film 125f, thereby reducing the thickness of a part of the sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R. Thereby, the inorganic insulating layer 125 is formed under the insulating layer 127a. Hereinafter, the etching process for processing the inorganic insulating film 125f using the insulating layer 127a as a mask is sometimes referred to as the first etching process.

[0339] That is, in the first etching process, the sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R are not completely removed, and the etching process is stopped in a state where the thickness becomes smaller. Thus, by leaving the corresponding sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R on the organic compound layers 103B, 103G, and 103R, the organic compound layers 103B, 103G, and 103R can be prevented from being damaged during the subsequent process.

[0340] The first etching process can be carried out by dry etching or wet etching. When depositing the inorganic insulating film 125f using the same material as the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R, it is preferable because the processing of the inorganic insulating film 125f and the thinning of the exposed sacrificial layer 158 can be carried out in one go through the first etching process.

[0341] By using the insulating layer 127a with a tapered side shape as a mask for etching, the sides of the inorganic insulating layer 125 and the upper end portions of the sides of the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R can be easily made into a tapered shape.

[0342] For example, when the first etching process is carried out by dry etching, a chlorine-based gas can be used. As the chlorine-based gas, one gas such as Cl2, BCl3, SiCl4, and CCl4 or a mixture of two or more of the above gases can be used. In addition, one gas such as oxygen gas, hydrogen gas, helium gas, and argon gas or a mixture of two or more of the above gases can be appropriately added to the above chlorine-based gas. By using dry etching, regions with a small thickness of the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R can be formed with excellent in-plane uniformity.

[0343] In addition, for example, the first etching process can be carried out by wet etching. By using the wet etching method, the damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be reduced compared to the case of using the dry etching method.

[0344] In wet etching, an acidic chemical solution is preferably used. As the acidic chemical solution, a chemical solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid or a mixed chemical solution of two or more acids (also called a mixed acid) can be used.

[0345] In addition, a basic solution can be used for wet etching. For example, when wet etching an alumina film, the basic solution TMAH can be used. In this case, wet etching can be carried out in a spin coating manner.

[0346] Next, a heat treatment (also called post-baking) is carried out. By carrying out the heat treatment, the insulating layer 127a can be deformed into the insulating layer 127 with a tapered side shape. Figure 9C)。This heat treatment is carried out at a temperature lower than the heat-resistant temperature of the organic compound layer. The heat treatment can be carried out at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, more preferably 70°C or higher and 130°C or lower. The heating atmosphere can be either an air atmosphere or an inert atmosphere. In addition, the heating atmosphere can be an air atmosphere or a reduced-pressure atmosphere. In the heat treatment of this step, it is preferable to increase the substrate temperature compared to the heat treatment (pre-baking) after forming the insulating film 127f.

[0347] Through the heat treatment, the adhesion between the insulating layer 127 and the inorganic insulating layer 125 can be improved, and the corrosion resistance of the insulating layer 127 can also be improved. In addition, through the deformation of the insulating layer 127a, the shape of covering the end portion of the inorganic insulating layer 125 by the insulating layer 127 can be achieved.

[0348] In the first etching treatment, by not completely removing the sacrificial layers 158B, 158G, and 158R and leaving the sacrificial layers 158B, 158G, and 158R in a state where the thickness becomes smaller, it is possible to prevent the organic compound layers 103B, 103G, and 103R from being damaged and deteriorated during this heat treatment. Thereby, the reliability of the light-emitting device can be improved.

[0349] Next, as Figure 10A shown, an etching treatment is performed using the insulating layer 127 as a mask to remove a part of the sacrificial layers 158B, 158G, and 158R. Note that, at this time, sometimes a part of the inorganic insulating layer 125 is also removed. Through this etching treatment, openings are formed in the sacrificial layers 158B, 158G, and 158R, and the top surfaces of the organic compound layers 103B, 103G, 103R, and the conductive layer 152C are exposed from the openings. Hereinafter, the etching treatment of using the insulating layer 127 as a mask to expose the organic compound layers 103B, 103G, and 103R is sometimes referred to as the second etching treatment.

[0350] In addition, the second etching treatment is performed using wet etching. By using the wet etching method, the damage to the organic compound layers 103B, 103G, and 103R can be reduced compared to the case of using the dry etching method. Similar to the first etching treatment, the wet etching can be performed using an acidic chemical solution or an alkaline solution.

[0351] Alternatively, a heat treatment may also be performed after a part of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R is exposed. By this heat treatment, water contained in the organic compound layer and water adsorbed on the surface of the organic compound layer can be removed. In addition, the shape of the insulating layer 127 sometimes changes due to this heat treatment. Specifically, the insulating layer 127 sometimes expands so as to cover at least one of the end portions of the inorganic insulating layer 125, the end portions of the sacrificial layers 158B, 158G, and 158R, and the top surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.

[0352] In addition, Figure 10A An example is shown in which a part of the end portion of the sacrificial layer 158G (specifically, a tapered portion formed by the first etching process) is covered by the insulating layer 127 and a tapered portion formed by the second etching process is exposed (see Figure 3A ).

[0353] Alternatively, the insulating layer 127 may also cover the entire end portion of the sacrificial layer 158G. For example, sometimes the end portion of the insulating layer 127 sags to cover the end portion of the sacrificial layer 158G. In addition, for example, sometimes the end portion of the insulating layer 127 contacts the top surface of at least one of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.

[0354] Next, as Figure 10B shown, a common electrode 155 is formed on the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the conductive layer 152C, and the insulating layer 127. The common electrode 155 can be formed by a method such as sputtering or vacuum evaporation. Alternatively, the common electrode 155 can also be formed by laminating a film formed by evaporation and a film formed by sputtering.

[0355] Next, as Figure 10C shown, a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by a method such as vacuum evaporation, sputtering, CVD, or ALD.

[0356] Next, the substrate 120 is bonded to the protective layer 131 using the resin layer 122, whereby a light-emitting device can be manufactured. As described above, in the manufacturing method of the light-emitting device according to one aspect of the present invention, the insulating layer 156 is provided so as to include a region overlapping with the side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. Thereby, the yield of the light-emitting device can be improved, and the occurrence of defects can be suppressed.

[0357] As described above, in the method for manufacturing a light-emitting device according to one embodiment of the present invention, the island-shaped organic compound layer 103B, the island-shaped organic compound layer 103G, and the island-shaped organic compound layer 103R are not formed using a high-precision metal mask but are formed by processing after depositing a film on one surface. Therefore, the island-shaped layers can be formed with a uniform thickness. Moreover, a high-definition light-emitting device or a light-emitting device with a high aperture ratio can be realized. In addition, even when the definition or aperture ratio is high and the distance between sub-pixels is extremely short, contact between the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R in adjacent sub-pixels can be suppressed. Accordingly, leakage current occurring between sub-pixels can be suppressed. Thereby, crosstalk can be prevented to realize a light-emitting device with an extremely high contrast. Further, even for a light-emitting device including a tandem light-emitting device manufactured by photolithography, a light-emitting device with good characteristics can be provided.

[0358] (Embodiment 3) In the present embodiment, with reference to Figures 11A to 11G and Figures 12A to 12I a light-emitting device according to one embodiment of the present invention will be described.

[0359] [Layout of pixels] In the present embodiment, a pixel layout different from that in FIG. 3 will be mainly described. There is no particular limitation on the arrangement of sub-pixels, and various arrangement methods can be adopted. As the arrangement of sub-pixels, for example, stripe arrangement, S-stripe arrangement, matrix arrangement, Delta arrangement, Bayer arrangement, and Pentile arrangement can be cited.

[0360] In the present embodiment, the top surface shape of the sub-pixels shown in the drawings corresponds to the top surface shape of the light-emitting region.

[0361] In addition, as the top surface shape of the sub-pixels, for example, polygons such as triangles, quadrilaterals (including rectangles and squares), pentagons, etc., the above-mentioned polygon shapes with rounded corners, ellipses, or circles can be cited.

[0362] In addition, the circuit layout constituting the sub-pixels is not limited to the range of the sub-pixels shown in the drawings and can also be arranged outside thereof.

[0363] Figure 11A The pixel 178 shown adopts an S-stripe arrangement. Figure 11A The pixel 178 shown is composed of three sub-pixels, namely a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0364] Figure 11BThe pixel 178 shown includes a sub-pixel 110R having a top surface shape of an approximate trapezoid with rounded corners, a sub-pixel 110G having a top surface shape of an approximate triangle with rounded corners, and a sub-pixel 110B having a top surface shape of an approximate quadrilateral or approximate hexagon with rounded corners. In addition, the light-emitting area of the sub-pixel 110R is larger than that of the sub-pixel 110G. Thus, the shapes and sizes of the respective sub-pixels can be determined independently. For example, the size of a sub-pixel including a highly reliable light-emitting device can be smaller.

[0365] Figure 11C The pixels 124a and 124b shown adopt a Pentile arrangement. In Figure 11C the example shown, pixels 124a including sub-pixels 110R and sub-pixels 110G and pixels 124b including sub-pixels 110G and sub-pixels 110B are alternately arranged.

[0366] Figures 11D to 11F The pixels 124a and 124b shown adopt a Delta arrangement. Pixel 124a includes two sub-pixels (sub-pixels 110R and sub-pixels 110G) in the upper row (the first row) and one sub-pixel (sub-pixel 110B) in the lower row (the second row). Pixel 124b includes one sub-pixel (sub-pixel 110B) in the upper row (the first row) and two sub-pixels (sub-pixels 110R and sub-pixels 110G) in the lower row (the second row).

[0367] Figure 11D An example is shown where each sub-pixel has a top surface shape of an approximate quadrilateral with rounded corners, Figure 11E An example is shown where each sub-pixel has a circular top surface shape, Figure 11F An example is shown where each sub-pixel has a top surface shape of an approximate hexagon with rounded corners.

[0368] In Figure 11F each sub-pixel is arranged inside a hexagonal region arranged in the closest-packed manner. Each sub-pixel is arranged in such a way that when focusing on one sub-pixel, it is surrounded by six sub-pixels. In addition, it is arranged so that sub-pixels emitting light of the same color are not adjacent. For example, each sub-pixel is arranged in such a way that when focusing on the sub-pixel 110R, it is surrounded by three sub-pixels 110G and three sub-pixels 110B arranged alternately.

[0369] Figure 11G An example is shown where the sub-pixels of each color are arranged in a zigzag shape. Specifically, in a top view, the positions of the upper sides of two sub-pixels (for example, sub-pixel 110R and sub-pixel 110G or sub-pixel 110G and sub-pixel 110B) arranged in the column direction are offset.

[0370] In Figures 11A to 11GAmong the pixels shown, for example, it is preferable that sub-pixel 110R is a sub-pixel R that emits red light, sub-pixel 110G is a sub-pixel G that emits green light, and sub-pixel 110B is a sub-pixel B that emits blue light. Note that the structure of the sub-pixels is not limited to this, and the colors presented by the sub-pixels and their arrangement order can be appropriately determined. For example, sub-pixel 110G can be set as sub-pixel R that emits red light, and sub-pixel 110R can be set as sub-pixel G that emits green light.

[0371] In photolithography, the finer the pattern to be processed, the more the influence of light diffraction cannot be ignored. Therefore, when transferring the pattern of the photomask through exposure, the fidelity deteriorates, and it is difficult to process the resist mask into the desired shape. Therefore, even if the pattern of the photomask is rectangular, it is easy to form a pattern with rounded corners. Therefore, the top surface shape of the sub-pixels sometimes has a polygonal shape with rounded corners, an elliptical shape, or a circular shape, etc.

[0372] Moreover, in the manufacturing method of a light-emitting device according to one embodiment of the present invention, the organic compound layer is processed into an island shape using a resist mask. The resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat-resistant temperature of the organic compound layer. Therefore, depending on the heat-resistant temperature of the material of the organic compound layer and the curing temperature of the resist material, the curing of the resist film may sometimes be insufficient. An insufficiently cured resist film may sometimes have a shape that deviates from the desired shape during processing. As a result, the top surface shape of the organic compound layer sometimes has a polygonal shape with rounded corners, an elliptical shape, or a circular shape, etc. For example, when forming a resist mask with a square top surface shape, a resist mask with a circular top surface shape may sometimes be formed, and the top surface shape of the organic compound layer is circular.

[0373] In addition, in order to make the top surface shape of the organic compound layer have the desired shape, a technique of pre-correcting the mask pattern so that the designed pattern and the transferred pattern are consistent (OPC (Optical Proximity Correction) technique) can also be used. Specifically, in the OPC technique, for example, a correction pattern is added to the graphic corners on the mask pattern.

[0374] As Figures 12A to 12I shown, a pixel can include four types of sub-pixels.

[0375] Figures 12A to 12C The pixel 178 shown adopts a stripe arrangement.

[0376] Figure 12A An example is shown in which each sub-pixel has a rectangular top surface shape. Figure 12B An example is shown in which each sub-pixel has a top surface shape connecting two semi-circles and a rectangle. Figure 12CAn example is shown in which each sub-pixel has an elliptical top surface shape.

[0377] Figures 12D to 12F The pixel 178 shown is arranged in a matrix.

[0378] Figure 12D An example is shown in which each sub-pixel has a square top surface shape. Figure 12E An example is shown in which each sub-pixel has an approximately square top surface shape with rounded corners. Figure 12F An example is shown in which each sub-pixel has a circular top surface shape.

[0379] Figure 12G and Figure 12H An example is shown in which one pixel 178 is composed of two rows and three columns.

[0380] Figure 12G The pixel 178 shown includes three sub-pixels (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B) in the upper row (the first row) and one sub-pixel (sub-pixel 110W) in the lower row (the second row). In other words, the pixel 178 includes sub-pixel 110R in the left column (the first column), sub-pixel 110G in the central column (the second column), sub-pixel 110B in the right column (the third column), and sub-pixel 110W spanning these three columns.

[0381] Figure 12H The pixel 178 shown includes three sub-pixels (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B) in the upper row (the first row) and three sub-pixels 110W in the lower row (the second row). In other words, the pixel 178 includes sub-pixel 110R and sub-pixel 110W in the left column (the first column), sub-pixel 110G and sub-pixel 110W in the central column (the second column), and sub-pixel 110B and sub-pixel 110W in the right column (the third column). As Figure 12H shown, by making the configurations of the sub-pixels in the upper and lower rows consistent, for example, dust that may be generated in the manufacturing process can be efficiently removed. Thereby, a light-emitting device with high display quality can be provided.

[0382] In Figure 12G and Figure 12H In the pixel 178 shown, the sub-pixels 110R, 110G, and 110B are arranged in a stripe pattern, so the display quality can be improved.

[0383] Figure 12I An example is shown in which one pixel 178 is composed of three rows and two columns.

[0384] Figure 12IThe pixel 178 shown includes sub-pixel 110R in the upper row (the first row), sub-pixel 110G in the central row (the second row), sub-pixel 110B spanning from the first row to the second row, and one sub-pixel (sub-pixel 110W) in the lower row (the third row). In other words, the pixel 178 includes sub-pixel 110R and sub-pixel 110G in the left column (the first column), sub-pixel 110B in the right column (the second column), and sub-pixel 110W spanning across these two columns.

[0385] In Figure 12I In the pixel 178 shown, the layout of sub-pixel 110R, sub-pixel 110G, and sub-pixel 110B is a so-called S stripe arrangement, so the display quality can be improved.

[0386] Figures 12A to 12I The pixel 178 shown is composed of four sub-pixels: sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, and sub-pixel 110W. For example, sub-pixel 110R can be set as a sub-pixel that emits red light, sub-pixel 110G can be set as a sub-pixel that emits green light, sub-pixel 110B can be set as a sub-pixel that emits blue light, and sub-pixel 110W can be set as a sub-pixel that emits white light. Additionally, at least one of sub-pixel 110R, sub-pixel 110G, sub-pixel 110B, and sub-pixel 110W can be set as a sub-pixel that emits cyan light, magenta light, yellow light, or near-infrared light.

[0387] As described above, in a light-emitting device according to one aspect of the present invention, various layouts can be adopted for pixels composed of sub-pixels including light-emitting devices.

[0388] This embodiment can be appropriately combined with other embodiments or examples. In addition, in this specification, when multiple structural examples are shown in one embodiment, these structural examples can be appropriately combined.

[0389] (Embodiment 4) In this embodiment, a light-emitting device according to one aspect of the present invention will be described.

[0390] The light-emitting device of this embodiment can be a high-definition light-emitting device. Therefore, for example, the light-emitting device of this embodiment can be used as a display unit of information terminal devices (wearable devices) such as watch-type and bracelet-type devices, as well as a display unit of wearable devices that can be worn on the head, such as VR devices like head-mounted displays (HMDs) and glasses-type AR devices.

[0391] In addition, the light-emitting device of the present embodiment can be a high-resolution light-emitting device or a large-sized light-emitting device. Therefore, for example, the light-emitting device of the present embodiment can be used as a display unit of the following devices: electronic devices with a large screen such as a television device, a desktop or notebook personal computer, a display for a computer, etc., a digital signage, and a large-sized game machine such as a pachinko machine; a digital camera; a digital video camera; a digital photo frame; a mobile phone; a portable game machine; a portable information terminal; and a sound reproduction device.

[0392] [Display module] Figure 13A A perspective view showing the display module 280. The display module 280 includes a light-emitting device 100A and an FPC 290. Note that the light-emitting device included in the display module 280 is not limited to the light-emitting device 100A, and it can also be either the light-emitting device 100B or the light-emitting device 100C to be described later.

[0393] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display unit 281. The display unit 281 is an image display area in the display module 280, and light from each pixel provided in the following pixel unit 284 can be seen.

[0394] Figure 13B It is a perspective schematic view of the structure on the side of the substrate 291. A circuit unit 282 is laminated on the substrate 291, a pixel circuit unit 283 is on the circuit unit 282, and a pixel unit 284 is on the pixel circuit unit 283. In addition, a terminal unit 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel unit 284. The terminal unit 285 and the circuit unit 282 are electrically connected through a wiring portion 286 composed of a plurality of wirings.

[0395] The pixel unit 284 includes a plurality of pixels 284a arranged periodically. Figure 13B An enlarged view of one pixel 284a is shown on the right side. The pixel 284a can adopt various structures described in the above embodiments. Figure 13B An example showing a case where the pixel 284a has the same structure as the pixel 178 shown in FIG. 3 is shown.

[0396] The pixel circuit unit 283 includes a plurality of pixel circuits 283a arranged periodically.

[0397] A pixel circuit 283a controls the driving of a plurality of elements included in a pixel 284a. Three circuits for controlling the light emission of a light-emitting device may be provided in the pixel circuit 283a. For example, the pixel circuit 283a may adopt a structure including at least one selection transistor, one current control transistor (driving transistor), and a capacitor for one light-emitting device. At this time, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. Thereby, an active matrix light-emitting device is realized.

[0398] The circuit section 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit section 283. For example, it preferably includes one or both of a gate line driving circuit and a source line driving circuit. In addition, it may further include at least one of an arithmetic circuit, a storage circuit, a power supply circuit, etc.

[0399] The FPC 290 is used as a wiring for supplying a video signal, a power supply potential, etc. from the outside to the circuit section 282. In addition, an IC may be mounted on the FPC 290.

[0400] The display module 280 may adopt a structure in which one or both of the pixel circuit section 283 and the circuit section 282 are laminated on the lower side of the pixel section 284, so the display section 281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display section 281 may be 40% or more and less than 100%, preferably 50% or more and 95% or less, more preferably 60% or more and 95% or less. In addition, the pixels 284a can be arranged with extremely high density, whereby the display section 281 can have extremely high clarity. For example, the display section 281 preferably arranges the pixels 284a with a clarity of 2000 ppi or more, more preferably 3000 ppi or more, further preferably 5000 ppi or more, still more preferably 6000 ppi or more, and 20000 ppi or less or 30000 ppi or less.

[0401] The above display module 280 has extremely high clarity, so it can be suitably used for VR devices such as HMDs or glasses-type AR devices. For example, in the structure of viewing the display section of the display module 280 through a lens, because the display module 280 has a display section 281 with extremely high clarity, even if the user magnifies the display section with the lens, pixels cannot be seen, thereby realizing a display with a high sense of immersion. In addition, the display module 280 is not limited to this, and can also be applied to electronic devices with a relatively small display section. For example, it is suitable for the display section of wearable electronic devices such as watch-type devices.

[0402] [Light-emitting device 100A] Figure 14AThe light-emitting device 100A shown includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.

[0403] The substrate 301 corresponds to Figure 13A and Figure 13B the substrate 291 in. The transistor 310 is a transistor having a channel formation region in the substrate 301. As the substrate 301, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 is used as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and is used as a gate insulating layer. The low-resistance region 312 is a region in the substrate 301 doped with impurities and is used as a source or a drain. The insulating layer 314 covers the side surface of the conductive layer 311.

[0404] In addition, an element isolation layer 315 is provided in the substrate 301 in an embedded manner between two adjacent transistors 310.

[0405] In addition, an insulating layer 261 is provided to cover the transistor 310, and a capacitor 240 is provided on the insulating layer 261.

[0406] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 is used as one electrode in the capacitor 240, the conductive layer 245 is used as the other electrode in the capacitor 240, and the insulating layer 243 is used as the dielectric of the capacitor 240.

[0407] The conductive layer 241 is provided on the insulating layer 261 and is embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 through a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0408] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. The light-emitting devices 130R, 130G, and 130B are provided on the insulating layer 175. Figure 14A The light-emitting devices 130R, 130G, and 130B are shown to have Figure 6A an example of a stacked structure as shown. An insulator is provided in the region between adjacent light-emitting devices. For example, in Figure 14AIn this case, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in this region.

[0409] An insulating layer 156R is provided in such a manner as to have a region overlapping with a side surface of a conductive layer 151R included in the light-emitting device 130R, an insulating layer 156G is provided in such a manner as to have a region overlapping with a side surface of a conductive layer 151G included in the light-emitting device 130G, and an insulating layer 156B is provided in such a manner as to have a region overlapping with a side surface of a conductive layer 151B included in the light-emitting device 130B. In addition, a conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R, a conductive layer 152G is provided so as to cover the conductive layer 151G and the insulating layer 156G, and a conductive layer 152B is provided so as to cover the conductive layer 151B and the insulating layer 156B. Further, a sacrificial layer 158R is located on an organic compound layer 103R included in the light-emitting device 130R, a sacrificial layer 158G is located on an organic compound layer 103G included in the light-emitting device 130G, and a sacrificial layer 158B is located on an organic compound layer 103B included in the light-emitting device 130B.

[0410] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of a source electrode and a drain electrode of the transistor 310 through plugs 256 embedded in an insulating layer 243, an insulating layer 255, an insulating layer 174, and an insulating layer 175, a conductive layer 241 embedded in an insulating layer 254, and a plug 271 embedded in an insulating layer 261. The height of the top surface of the insulating layer 175 is the same as or substantially the same as the height of the top surface of the plug 256. Various conductive materials can be used for the plug.

[0411] In addition, a protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. Details of the components from the light-emitting device 130 to the substrate 120 can be referred to in Embodiment 2. The substrate 120 corresponds to Figure 13A the substrate 292.

[0412] Figure 14B Shows Figure 14A A modified example of the light-emitting device 100A shown. Figure 14B The shown light-emitting device includes a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B, and the light-emitting device 130 has a region overlapping with one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. In Figure 14B In the shown light-emitting device, the light-emitting device 130 can emit white light, for example. In addition, for example, the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B can transmit red light, green light, and blue light, respectively.

[0413] [Light-emitting device 100B] Figure 15 A perspective view showing the light-emitting device 100B is presented. Figure 16A A cross-sectional view showing the light-emitting device 100B is presented.

[0414] The light-emitting device 100B has a structure in which a bonding substrate 352 and a substrate 351 are bonded. In Figure 15 it, the substrate 352 is represented by a dashed line.

[0415] The light-emitting device 100B includes a pixel portion 177, a connection portion 140, a circuit 356, wirings 355, and the like. Figure 15 An example in which an IC 354 and an FPC 353 are mounted on the light-emitting device 100B is presented. Therefore, the structure shown can also be referred to as a display module including the light-emitting device 100B, an IC, and an FPC. Here, the substrate of the light-emitting device on which connectors such as an FPC are mounted or the substrate on which an IC is mounted is referred to as a display module. Figure 15

[0416] The connection portion 140 is provided outside the pixel portion 177. The connection portion 140 can be provided along one or more sides of the pixel portion 177. The connection portion 140 can also be one or more. Figure 15 An example in which the connection portion 140 is provided in a manner surrounding the four sides of the display portion is presented. In the connection portion 140, the common electrode of the light-emitting device is electrically connected to the conductive layer, and a potential can be supplied to the common electrode.

[0417] As the circuit 356, for example, a scan line driving circuit can be used.

[0418] The wirings 355 have a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wirings 355 from the outside via the FPC 353 or from the IC 354 to the wirings 355.

[0419] Figure 15 An example in which an IC 354 is provided on the substrate 351 by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like is presented. As the IC 354, for example, an IC including a scan line driving circuit, a signal line driving circuit, or the like can be used. Note that the light-emitting device 100B and the display module do not necessarily have to be provided with an IC. In addition, for example, the IC can be mounted on the FPC by a COF method.

[0420] Figure 16A An example of a cross-section of a part of the region including the FPC 353, a part of the circuit 356, a part of the pixel portion 177, a part of the connection portion 140, and a part of the region including the end portion of the light-emitting device 100B is presented.

[0421] Figure 16A The light-emitting device 100B shown includes a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, a light-emitting device 130B, etc. between a substrate 351 and a substrate 352.

[0422] Except for the difference in the structure of the pixel electrode, the light-emitting devices 130R, 130G, and 130B all have Figure 6A the stacked structure shown. For the detailed content of the light-emitting device, reference can be made to the above-described Embodiment 1 and Embodiment 2.

[0423] The light-emitting device 130R includes a conductive layer 224R, a conductive layer 151R on the conductive layer 224R, and a conductive layer 152R on the conductive layer 151R. The light-emitting device 130G includes a conductive layer 224G, a conductive layer 151G on the conductive layer 224G, and a conductive layer 152G on the conductive layer 151G. The light-emitting device 130B includes a conductive layer 224B, a conductive layer 151B on the conductive layer 224B, and a conductive layer 152B on the conductive layer 151B. Here, the conductive layer 224R, the conductive layer 151R, and the conductive layer 152R can be collectively referred to as the pixel electrode of the light-emitting device 130R, or the conductive layer 151R and the conductive layer 152R excluding the conductive layer 224R can be referred to as the pixel electrode of the light-emitting device 130R. Similarly, the conductive layer 224G, the conductive layer 151G, and the conductive layer 152G can be collectively referred to as the pixel electrode of the light-emitting device 130G, or the conductive layer 151G and the conductive layer 152G excluding the conductive layer 224G can be referred to as the pixel electrode of the light-emitting device 130G. In addition, the conductive layer 224B, the conductive layer 151B, and the conductive layer 152B can be collectively referred to as the pixel electrode of the light-emitting device 130B, or the conductive layer 151B and the conductive layer 152B excluding the conductive layer 224B can be referred to as the pixel electrode of the light-emitting device 130B.

[0424] The conductive layer 224R is connected to the conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214. The end of the conductive layer 151R is located outside the end of the conductive layer 224R. An insulating layer 156R is provided in such a manner as to have a region in contact with the side surface of the conductive layer 151R, and a conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R.

[0425] The conductive layer 224G, conductive layer 151G, conductive layer 152G, insulating layer 156G in the light-emitting device 130G, the conductive layer 224B, conductive layer 151B, conductive layer 152B, insulating layer 156B in the light-emitting device 130B, and the conductive layer 224R, conductive layer 151R, conductive layer 152R, insulating layer 156R in the light-emitting device 130R are the same, so detailed description is omitted.

[0426] In the conductive layer 224R, conductive layer 224G, and conductive layer 224B, recesses are formed in a manner of covering the openings provided in the insulating layer 214. The recesses are filled with the layer 128.

[0427] The layer 128 has a function of planarizing the recesses of the conductive layer 224R, conductive layer 224G, and conductive layer 224B. On the conductive layer 224R, conductive layer 224G, conductive layer 224B, and layer 128, the conductive layer 151R, conductive layer 151G, and conductive layer 151B electrically connected to the conductive layer 224R, conductive layer 224G, and conductive layer 224B are provided. Therefore, the regions overlapping with the recesses of the conductive layer 224R, conductive layer 224G, and conductive layer 224B can also be used as light-emitting regions, and the aperture ratio of the pixel can be improved.

[0428] The layer 128 can also be an insulating layer or a conductive layer. The layer 128 can appropriately use various inorganic insulating materials, organic insulating materials, and conductive materials. In particular, the layer 128 is preferably formed using an insulating material, and particularly preferably formed using an organic insulating material. For example, the layer 128 can use the organic insulating material that can be used for the insulating layer 127 described above.

[0429] A protective layer 131 is provided on the light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B. The protective layer 131 and the substrate 352 are bonded by the adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. The light-emitting device 130 can be sealed by a solid sealing structure or a hollow sealing structure, etc. In Figure 16A this case, the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, that is, a solid sealing structure is adopted. Alternatively, the space can also be filled with an inert gas (such as nitrogen or argon), that is, a hollow sealing structure is adopted. At this time, the adhesive layer 142 can also be provided in a manner that does not overlap with the light-emitting device. In addition, the space can also be filled with a resin different from the adhesive layer 142 provided in a frame shape.

[0430] Figure 16AThe following examples are shown: The connection part 140 includes a conductive layer 224C obtained by processing the same conductive film as the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, a conductive layer 151C obtained by processing the same conductive film as the conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, and a conductive layer 152C obtained by processing the same conductive film as the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B. In addition, Figure 16A An example is shown in which the insulating layer 156C is provided in such a manner as to have a region overlapping with the side surface of the conductive layer 151C.

[0431] The light-emitting device 100B is a top-emission type display device. The light-emitting element emits light toward the substrate 352 side. The substrate 352 is preferably made of a material having high visible light transmittance. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0432] Both the transistor 201 and the transistor 205 are formed on the substrate 351. These transistors can be formed using the same material and the same process.

[0433] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are sequentially provided on the substrate 351. A part of the insulating layer 211 is used as the gate insulating layer of each transistor. A part of the insulating layer 213 is used as the gate insulating layer of each transistor. The insulating layer 215 is provided so as to cover the transistors. The insulating layer 214 is provided so as to cover the transistors and is used as a planarization layer. In addition, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistors, and it may be one or two or more.

[0434] Preferably, a material in which impurities such as water and hydrogen do not easily diffuse is used for at least one of the insulating layers covering the transistors. Thereby, the insulating layer can be used as a barrier layer. By adopting such a structure, it is possible to effectively suppress the diffusion of impurities from the outside into the transistors, and thus the reliability of the light-emitting device can be improved.

[0435] As the insulating layer 211, the insulating layer 213, and the insulating layer 215, an inorganic insulating film is preferably used. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or an aluminum nitride film can be used. In addition, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film can also be used. In addition, two or more of the above insulating films can be laminated.

[0436] The insulating layer 214 used as a planarization layer preferably uses an organic insulating layer. As materials that can be used for the organic insulating layer, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, silicone resin, benzocyclobutene resin, phenolic resin, and precursors of the above resins can be cited. In addition, the insulating layer 214 may also have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 is preferably used as an etching protection layer. Thereby, when processing the conductive layer 224R, the conductive layer 151R, the conductive layer 152R, etc., the formation of recesses in the insulating layer 214 can be suppressed. Alternatively, when processing the conductive layer 224R, the conductive layer 151R, the conductive layer 152R, etc., recesses can also be provided in the insulating layer 214.

[0437] The transistors 201 and 205 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; conductive layers 222a and 222b serving as source and drain; a semiconductor layer 231; an insulating layer 213 serving as a gate insulating layer; and a conductive layer 223 serving as a gate. Here, multiple layers obtained by processing the same conductive film are represented by the same hatching. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0438] There is no particular limitation on the transistor structure included in the light-emitting device of the present embodiment. For example, a planar transistor, a staggered transistor, an anti-staggered transistor, etc. can be adopted. In addition, the transistors can all have a top-gate structure or a bottom-gate structure. Alternatively, gates can also be provided above and below the semiconductor layer where the channel is formed.

[0439] As the transistors 201 and 205, a structure in which a semiconductor layer forming a channel is clamped by two gates is adopted. In addition, the two gates can also be connected, and the transistors can be driven by supplying the same signal to the two gates. Alternatively, by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other, the threshold voltage of the transistor can also be controlled.

[0440] There is no particular limitation on the crystallinity of the semiconductor material used for the transistors, and an amorphous semiconductor or a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystalline region in a part thereof) can be used. When using a semiconductor having crystallinity, deterioration of the transistor characteristics can be suppressed, so it is preferred.

[0441] The semiconductor layer of the transistor preferably uses a metal oxide. That is, the light-emitting device of the present embodiment preferably uses a transistor (hereinafter, OS transistor) including a metal oxide in the channel formation region.

[0442] Examples of the crystalline oxide semiconductor include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0443] Alternatively, a transistor (Si transistor) using silicon for the channel formation region may be used. Examples of the silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor in which the semiconductor layer contains low temperature polycrystalline silicon (LTPS (Low Temperature Poly Silicon)) (hereinafter, also referred to as an LTPS transistor) may be used. The LTPS transistor has a high field effect mobility and good frequency characteristics.

[0444] By using an Si transistor such as an LTPS transistor, a circuit (for example, a source drive circuit) that needs to be driven at a high frequency and a display unit can be formed on the same substrate. Therefore, the external circuit mounted on the light emitting device can be simplified, and the component cost and the mounting cost can be reduced.

[0445] Compared with a transistor using amorphous silicon, the field effect mobility of the OS transistor is very high. In addition, the leakage current (hereinafter, also referred to as the off-state current) between the source and the drain in the off state of the OS transistor is extremely low, and the charge stored in the capacitor connected in series with the transistor can be maintained for a long time. In addition, by using the OS transistor, the power consumption of the light emitting device can be reduced.

[0446] In addition, when increasing the light emission luminance of the light emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light emitting device. For this purpose, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Since the breakdown voltage between the source and the drain of the OS transistor is higher than that of the Si transistor, a high voltage can be applied between the source and the drain of the OS transistor. Thus, by using the OS transistor as the driving transistor included in the pixel circuit, the amount of current flowing through the light emitting device can be increased to increase the light emission luminance of the light emitting device.

[0447] In addition, when the transistor operates in the saturation region, compared with the Si transistor, the OS transistor can make the change in the source-drain current for the change in the gate-source voltage small. Therefore, by using the OS transistor as the driving transistor included in the pixel circuit, the current flowing through the source-drain can be determined in detail according to the change in the gate-source voltage, so that the amount of current flowing through the light emitting device can be controlled. Thus, the gradation represented by the pixel circuit can be increased.

[0448] In addition, regarding the saturation characteristics of the current flowing when the transistor operates in the saturation region, compared with Si transistors, OS transistors can cause a stable current (saturation current) to flow even when gradually increasing the source-drain voltage. Therefore, by using an OS transistor as a driving transistor, even if, for example, the current-voltage characteristics of a light-emitting device are uneven, a stable current can flow through the light-emitting device. That is to say, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current hardly changes, so the light-emitting brightness of the light-emitting device can be stabilized.

[0449] As described above, by using an OS transistor as the driving transistor included in the pixel circuit, "suppression of black impurity", "increase in light-emitting brightness", "multi-gray scale", "suppression of unevenness of light-emitting devices", etc. can be achieved.

[0450] For example, the semiconductor layer preferably contains indium, M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium). In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0451] In particular, as the semiconductor layer, an oxide containing indium (In), gallium (Ga), and zinc (also denoted as IGZO) is preferably used. Alternatively, an oxide containing indium, tin, and zinc is preferably used. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferably used. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also called IAZO) is preferably used. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also called IAGZO) is preferably used.

[0452] When using In-M-Zn oxide in the semiconductor layer, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of the atomic ratios of the metal elements in such In-M-Zn oxide include compositions such as In:M:Zn = 1:1:1 or in the vicinity thereof, In:M:Zn = 1:1:1.2 or in the vicinity thereof, In:M:Zn = 2:1:3 or in the vicinity thereof, In:M:Zn = 3:1:2 or in the vicinity thereof, In:M:Zn = 4:2:3 or in the vicinity thereof, In:M:Zn = 4:2:4.1 or in the vicinity thereof, In:M:Zn = 5:1:3 or in the vicinity thereof, In:M:Zn = 5:1:6 or in the vicinity thereof, In:M:Zn = 5:1:7 or in the vicinity thereof, In:M:Zn = 5:1:8 or in the vicinity thereof, In:M:Zn = 6:1:6 or in the vicinity thereof, In:M:Zn = 5:2:5 or in the vicinity thereof, etc. Note that the compositions in the vicinity include the range of ±30% of the desired atomic ratio.

[0453] For example, when it is described that the composition has an atomic ratio of In:Ga:Zn = 4:2:3 or in the vicinity thereof, it includes the following cases: when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. In addition, when it is described that the composition has an atomic ratio of In:Ga:Zn = 5:1:6 or in the vicinity thereof, it includes the following cases: when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. In addition, when it is described that the composition has an atomic ratio of In:Ga:Zn = 1:1:1 or in the vicinity thereof, it includes the following cases: when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0454] The transistors included in circuit 356 and the transistors included in pixel section 177 may have the same structure or different structures. The multiple transistors included in circuit 356 may have the same structure or two or more different structures. Similarly, the multiple transistors included in pixel section 177 may have the same structure or two or more different structures.

[0455] All of the transistors included in pixel section 177 may be OS transistors, all of the transistors included in pixel section 177 may be Si transistors, and some of the transistors included in pixel section 177 may be OS transistors while the remaining transistors may be Si transistors.

[0456] For example, by using both LTPS transistors and OS transistors in the pixel section 177, a light-emitting device with low power consumption and high driving ability can be realized. Additionally, a structure combining LTPS transistors and OS transistors is sometimes referred to as LTPO. Further, for example, it is preferable to use an OS transistor as the transistor for controlling conduction and non-conduction of the control wiring and an LTPS transistor as the transistor for controlling current.

[0457] For example, one of the transistors included in the pixel section 177, which is used as the transistor for controlling the current flowing through the light-emitting device, may be referred to as a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. Thus, the current flowing through the light-emitting device in the pixel circuit can be increased.

[0458] On the other hand, the other one of the transistors included in the pixel section 177, which is used as the switch for controlling selection and non-selection of the pixel, may be referred to as a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor as the selection transistor. Thereby, since the gray level of the pixel can be maintained even if the frame frequency is extremely low (for example, 1 fps or less), the power consumption can be reduced by stopping the driver when displaying a static image.

[0459] In this way, the light-emitting device according to one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0460] Note that the light-emitting device according to one embodiment of the present invention adopts a structure including an OS transistor and a light-emitting device having an MML (Metal MaskLess) structure. By adopting this structure, the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (sometimes referred to as lateral leakage current, horizontal leakage current, or transverse leakage current) can be made extremely low. Further, by adopting the above structure, when an image is displayed on the light-emitting device, a viewer can observe one or more of the sharpness of the image, the sharpness of the image, high color saturation, and high contrast. Additionally, by adopting a structure in which the leakage current that can flow through the transistor and the horizontal leakage current between the light-emitting devices are extremely low, display with extremely little light leakage (so-called black impurity) that can occur when displaying black can be performed.

[0461] In particular, when the above SBS structure is adopted in the light-emitting device with an MML structure, the layer provided between the light-emitting devices (for example, also referred to as the organic layer or the common layer commonly used by the light-emitting devices) is disconnected, whereby display without side leakage or with extremely little side leakage can be performed.

[0462] Figure 16B andFigure 16C Shows other structural examples of transistors.

[0463] The transistor 209 and the transistor 210 include: a conductive layer 221 serving as a gate; an insulating layer 211 serving as a gate insulating layer; a semiconductor layer 231 having a channel formation region 231i and a pair of low-resistance regions 231n; a conductive layer 222a connected to one of the pair of low-resistance regions 231n; a conductive layer 222b connected to the other of the pair of low-resistance regions 231n; an insulating layer 225 serving as a gate insulating layer; a conductive layer 223 serving as a gate; and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is at least located between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may also be provided.

[0464] In Figure 16B In the example shown, in the transistor 209, the insulating layer 225 covers the top surface and the side surface of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b is used as a source electrode, and the other is used as a drain electrode.

[0465] On the other hand, in Figure 16C In the transistor 210 shown, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low-resistance region 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, the structure shown in Figure 16C can be formed. In Figure 16C , the insulating layer 215 covers the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are respectively connected to the low-resistance region 231n through openings in the insulating layer 215.

[0466] A connection portion 204 is provided in a region of the substrate 351 that does not overlap with the substrate 352. In the connection portion 204, the wiring 355 is electrically connected to the FPC 353 through the conductive layer 166 and the connection layer 242. The following example is shown: The conductive layer 166 has a laminated structure of a conductive film obtained by processing the same conductive film as the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, a conductive film obtained by processing the same conductive film as the conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, and a conductive film obtained by processing the same conductive film as the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B. The conductive layer 166 is exposed on the top surface of the connection portion 204. Therefore, the connection portion 204 can be electrically connected to the FPC 353 through the connection layer 242.

[0467] Preferably, a light-shielding layer 157 is provided on the surface of the substrate 351 on the side of the substrate 352. The light-shielding layer 157 can be provided between adjacent light-emitting devices, in the connection portion 140, the circuit 356, etc. In addition, various optical members can be arranged outside the substrate 352.

[0468] Each of the substrate 351 and the substrate 352 can adopt a material that can be used for the substrate 120.

[0469] As the adhesive layer 142, a material that can be used for the resin layer 122 can be used.

[0470] As the connection layer 242, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), etc. can be used.

[0471] [Light-emitting device 100H] Figure 17 The main difference between the shown light-emitting device 100H and the light-emitting device 100A shown in FIG. 16 is that the former is a light-emitting device adopting a bottom-emission structure.

[0472] The light-emitting device emits light to the side of the substrate 351. The substrate 351 is preferably made of a material with high transmittance to visible light. On the other hand, there is no limitation on the light transmittance of the material used for the substrate 352.

[0473] Preferably, a light-shielding layer 157 is formed between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. Figure 17 An example is shown in which a light-shielding layer 157 is provided on the substrate 351, an insulating layer 153 is provided on the light-shielding layer 157, and transistors 201, 205, etc. are provided on the insulating layer 153.

[0474] The light-emitting device 130R includes a conductive layer 112R, a conductive layer 126R on the conductive layer 112R, and a conductive layer 129R on the conductive layer 126R.

[0475] The light-emitting device 130B includes a conductive layer 112B, a conductive layer 126B on the conductive layer 112B, and a conductive layer 129B on the conductive layer 126B.

[0476] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B all use materials with high transmittance to visible light. As the common electrode 155, a material that reflects visible light is preferably used.

[0477] Note that although Figure 17 the light-emitting device 130G is not shown in the figure, the light-emitting device 130G is also provided.

[0478] In addition, Figure 17 Examples such as those showing that the top surface of layer 128 has a flat portion are given, but there is no particular limitation on the shape of layer 128.

[0479] [Light-emitting device 100C] Figure 18A The light-emitting device 100C shown is Figure 16A a modified example of the light-emitting device 100B shown. The difference between this light-emitting device 100C and the light-emitting device 100B is that the former includes a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B.

[0480] In the light-emitting device 100C, the light-emitting device 130 has an area overlapping one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. The coloring layer 132R, the coloring layer 132G, and the coloring layer 132B can be provided on the surface of the substrate 351 on the side of the substrate 352. The ends of the coloring layer 132R, the ends of the coloring layer 132G, and the ends of the coloring layer 132B can overlap the light-shielding layer 157.

[0481] In the light-emitting device 100C, the light-emitting device 130 can emit white light, for example. In addition, for example, the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B can transmit red light, green light, and blue light, respectively. In addition, the light-emitting device 100C can also adopt a structure in which the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B are provided between the protective layer 131 and the adhesive layer 142.

[0482] Although Figure 16A and Figure 18A Examples such as those showing that the top surface of layer 128 has a flat portion are given, but there is no particular limitation on the shape of layer 128. Figures 18B to 18D A modified example of layer 128 is shown.

[0483] As Figure 18B and Figure 18D shown, the top surface of layer 128 can have a shape that is concave in the center and its vicinity in cross-section, that is, a shape having a concave curved surface.

[0484] In addition, as Figure 18C shown, the top surface of layer 128 can have a shape that is convex in the center and its vicinity in cross-section, that is, a shape having a convex curved surface.

[0485] In addition, the top surface of layer 128 can also have one or both of a convex curved surface and a concave curved surface. In addition, there is no limitation on the number of convex curved surfaces and concave curved surfaces of the top surface of layer 128, and it can be one or more.

[0486] In addition, the top surface height of layer 128 and the top surface height of conductive layer 224R may be the same or substantially the same, or may be different. For example, the top surface height of layer 128 may be lower than or higher than the top surface height of conductive layer 224R.

[0487] Figure 18B This can also be said to be an example where layer 128 is received inside the recess formed in conductive layer 224R. On the other hand, as Figure 18D shown, layer 128 can also be formed in such a way that it exists outside the recess formed in conductive layer 224R, that is, in such a way that the top surface width of layer 128 is greater than that of the recess.

[0488] This embodiment can be appropriately combined with other embodiments or examples. In addition, in this specification, when multiple structural examples are shown in one embodiment, these structural examples can be appropriately combined.

[0489] (Embodiment 5) In this embodiment, an electronic device of one aspect of the present invention will be described.

[0490] The electronic device of this embodiment includes a light-emitting device of one aspect of the present invention in the display unit. The light-emitting device of one aspect of the present invention has high reliability and is easily capable of high definition and high resolution. Therefore, it can be used for the display units of various electronic devices.

[0491] As electronic devices, for example, in addition to electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, monitors for computers, digital signage, large gaming machines such as pachinko machines, etc., digital cameras, digital video cameras, digital photo frames, mobile phones, portable gaming machines, portable information terminals, sound reproduction devices, etc. can also be cited.

[0492] In particular, since the light-emitting device of one aspect of the present invention can improve clarity, it is suitable for electronic devices including relatively small display units. Examples of such electronic devices include watch-type and bracelet-type information terminal devices (wearable devices), wearable devices that can be worn on the head such as VR devices like head-mounted displays, glasses-type AR devices, and MR devices.

[0493] One embodiment of the light-emitting device of the present invention preferably has an extremely high resolution such as HD (pixel number: 1280×720), FHD (pixel number: 1920×1080), WQHD (pixel number: 2560×1440), WQXGA (pixel number: 2560×1600), 4K (pixel number: 3840×2160), 8K (pixel number: 7680×4320), etc. In particular, it is preferably set to a resolution of 4K, 8K or higher. In addition, the pixel density (clarity) of the light-emitting device according to one embodiment of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, further preferably 1000 ppi or more, still further preferably 2000 ppi or more, still further preferably 3000 ppi or more, even further preferably 5000 ppi or more, and further preferably 7000 ppi or more. By using the above light-emitting device having one or both of high resolution and high clarity, the sense of reality and depth can be further enhanced in personal-use electronic devices such as portable or household devices. In addition, there is no particular limitation on the screen ratio (aspect ratio) of the light-emitting device according to one embodiment of the present invention. For example, the light-emitting device can adapt to various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0494] The electronic device of the present embodiment may also include a sensor (the sensor has a function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, or infrared rays).

[0495] The electronic device of the present embodiment can have various functions. For example, it can have the following functions: a function of displaying various information (static images, dynamic images, text images, etc.) on the display unit; a function of a touch panel; a function of displaying a calendar, date, or time, etc.; a function of executing various software (programs); a function of performing wireless communication; a function of reading programs or data stored in a storage medium; etc.

[0496] Use Figures 19A to 19D An example of a wearable device that can be worn on the head will be described. These wearable devices have at least one of a function of displaying AR content, a function of displaying VR content, a function of displaying SR content, and a function of displaying MR content. When the electronic device has a function of displaying at least one of AR, VR, SR, and MR content, the immersion of the user can be enhanced.

[0497] Figure 19A The illustrated electronic device 700A and Figure 19BThe illustrated electronic device 700B includes a pair of display panels 751, a pair of frames 721, a communication unit (not shown), a pair of mounting portions 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a bezel 757, and a pair of nose pads 758.

[0498] The display panel 751 can apply the light-emitting device of one aspect of the present invention. Thereby, a highly reliable electronic device can be realized.

[0499] Both the electronic device 700A and the electronic device 700B can project the image displayed on the display panel 751 onto the display area 756 in the optical member 753. Since the optical member 753 has translucency, the user can see the image displayed in the display area overlapping with the transmitted image seen through the optical member 753. Therefore, both the electronic device 700A and the electronic device 700B are electronic devices capable of performing AR display.

[0500] On the electronic device 700A and the electronic device 700B, a camera capable of photographing the front can also be provided as the imaging unit. In addition, by providing an acceleration sensor such as a gyro sensor in the electronic device 700A and the electronic device 700B, the direction of the user's head can be detected and the image corresponding to the direction can be displayed on the display area 756.

[0501] The communication unit has a wireless communication device, and an image signal can be supplied through the wireless communication device, for example. In addition, instead of or in addition to the wireless communication device, a connector capable of connecting a cable for supplying an image signal and a power potential may be included.

[0502] In addition, the electronic device 700A and the electronic device 700B are provided with a battery and can be charged in one or both of a wireless manner and a wired manner.

[0503] The frame 721 may also be provided with a touch sensor module. The touch sensor module has a function of detecting whether the outer surface of the frame 721 is touched. Through the touch sensor module, various processes can be executed by detecting a tap operation or a swipe operation of the user, etc. For example, through a tap operation, processes such as temporarily stopping or restarting a moving image can be executed, and through a swipe operation, processes such as fast forward and rewind can be executed, etc. In addition, by providing a touch sensor module on each of the two frames 721, the operation range can be expanded.

[0504] As the touch sensor module, various touch sensors can be used. For example, various methods such as a capacitive method, a resistive film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, or an optical method can be adopted. In particular, it is preferable to apply a capacitive method or an optical method sensor to the touch sensor module.

[0505] When using an optical touch sensor, a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as the light-receiving element. One or both of an inorganic semiconductor and an organic semiconductor can be used in the active layer of the photoelectric conversion device.

[0506] Figure 19C The electronic device 800A shown and Figure 19D The electronic device 800B shown both include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0507] The display unit 820 can apply the light-emitting device of one aspect of the present invention. Thereby, a highly reliable electronic device can be realized.

[0508] The display unit 820 is disposed at a position inside the housing 821 where it can be seen through the lens 832. In addition, by displaying different images on each of the pair of display units 820, three-dimensional display using parallax can be performed.

[0509] Both the electronic device 800A and the electronic device 800B can be referred to as VR-oriented electronic devices. A user wearing the electronic device 800A or the electronic device 800B can see the image displayed on the display unit 820 through the lens 832.

[0510] The electronic device 800A and the electronic device 800B preferably have a mechanism in which the left and right positions of the lens 832 and the display unit 820 can be adjusted so that the lens 832 and the display unit 820 are located at the most suitable positions according to the position of the user's eyes. In addition, it preferably has a mechanism in which the focus is adjusted by changing the distance between the lens 832 and the display unit 820.

[0511] The user can wear the electronic device 800A or the electronic device 800B on the head using the mounting unit 823. For example, in Figure 19C it, the mounting unit 823 has a shape such as the temple of glasses (also referred to as a hinge or wire, etc.), but is not limited thereto. As long as the user can wear it, the mounting unit 823 can have, for example, a helmet type or a band type shape.

[0512] The imaging unit 825 has a function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras can also be provided to be able to correspond to various perspectives such as telephoto and wide angle.

[0513] Note that an example including the imaging unit 825 is shown here, and a distance measurement sensor (hereinafter, also referred to as a detection unit) capable of measuring the distance to an object may be provided. In other words, the imaging unit 825 is one mode of the detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as a lidar (Light Detection and Ranging) may be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be obtained, and a more accurate attitude operation can be achieved.

[0514] The electronic device 800A may also include a vibration mechanism used as a bone conduction headphone. For example, as one or more of the display unit 820, the housing 821, and the mounting unit 823, a structure including the vibration mechanism may be adopted. Thus, there is no need to separately provide audio devices such as a headset, headphones, or speakers, and the user can enjoy images and sounds just by wearing the electronic device 800A.

[0515] Both the electronic device 800A and the electronic device 800B may include input terminals. A cable for supplying an image signal from an image output device or the like and power for charging a battery provided in the electronic device may be connected to the input terminals.

[0516] An electronic device according to one aspect of the present invention may also have a function of wirelessly communicating with the headphone 750. The headphone 750 includes a communication unit (not shown) and has a wireless communication function. The headphone 750 can receive information (such as sound data) from the electronic device through the wireless communication function. For example, Figure 19A The illustrated electronic device 700A has a function of sending information to the headphone 750 through the wireless communication function. Additionally, for example, Figure 19C The illustrated electronic device 800A has a function of sending information to the headphone 750 through the wireless communication function.

[0517] In addition, the electronic device may also include a headphone unit. Figure 19B The illustrated electronic device 700B includes a headphone unit 727. For example, a structure in which the headphone unit 727 and the control unit are connected in a wired manner may be adopted. A part of the wiring connecting the headphone unit 727 and the control unit may also be disposed inside the housing 721 or the mounting unit 723.

[0518] Similarly, Figure 19DThe illustrated electronic device 800B includes a headphone unit 827. For example, a configuration in which the headphone unit 827 and the control unit 824 are connected in a wired manner can be adopted. A part of the wiring connecting the headphone unit 827 and the control unit 824 can also be disposed inside the housing 821 or the mounting portion 823. In addition, the headphone unit 827 and the mounting portion 823 may include magnets. Thus, it is possible to fix the headphone unit 827 to the mounting portion 823 with magnetic force, which makes storage easier, so it is preferable.

[0519] The electronic device may also include a sound output terminal capable of connecting to a headphone or a headset. In addition, the electronic device may include one or both of a sound input terminal and a sound input mechanism. As the sound input mechanism, for example, a sound collection device such as a microphone can be used. By providing the sound input mechanism to the electronic device, the electronic device can have the function of a so-called headset.

[0520] Thus, as the electronic device according to one aspect of the present invention, both the glasses type (such as the electronic devices 700A and 700B) and the goggles type (such as the electronic devices 800A and 800B) are preferable.

[0521] In addition, the electronic device according to one aspect of the present invention can transmit information to the headphone in a wired or wireless manner.

[0522] Figure 20A The illustrated electronic device 6500 is a portable information terminal device that can be used as a smartphone.

[0523] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, etc. The display unit 6502 has a touch panel function.

[0524] The display unit 6502 can use the light-emitting device according to one aspect of the present invention. Thus, a highly reliable electronic device can be realized.

[0525] Figure 20B It is a schematic cross-sectional view of an end portion on the microphone side of the housing 6501.

[0526] A protective member 6510 having translucency is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are provided in a space surrounded by the housing 6501 and the protective member 6510.

[0527] The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 using an adhesive layer (not shown).

[0528] In the region outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded-back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on the printed circuit board 6517.

[0529] The display panel 6511 can be a flexible display in one mode of the present invention. Thus, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic device. Further, by folding a part of the display panel 6511 to provide a connection portion with the FPC 6515 on the back surface of the pixel portion, a narrow-bezel electronic device can be realized.

[0530] Figure 20C An example of a television device is shown. In the television device 7100, a display unit 7000 is assembled in a housing 7171. A structure in which the housing 7171 is supported by a bracket 7173 is shown here.

[0531] The display unit 7000 can be a light-emitting device in one mode of the present invention. Thus, a highly reliable electronic device can be realized.

[0532] The operation of the television device 7100 shown can be performed by using the operation switches provided in the housing 7171 and a separately provided remote controller 7151. Figure 20C Alternatively, a touch sensor can be provided in the display unit 7000, and the operation of the television device 7100 can be performed by touching the display unit 7000 with a finger or the like. In addition, a display unit for displaying information output from the remote controller 7151 can be provided in the remote controller 7151. By using the operation keys or the touch panel provided in the remote controller 7151, the channels and volume can be operated, and the image displayed on the display unit 7000 can be operated.

[0533] In addition, the television device 7100 includes a receiver, a modem, etc. General television broadcasts can be received by using the receiver. Further, by connecting to a communication network in a wired or wireless manner through the modem, one-way (from the sender to the receiver) or two-way (between the sender and the receiver or between the receivers, etc.) information communication can be performed.

[0534] Figure 20D An example of a notebook personal computer is shown. The notebook personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is assembled in the housing 7211.

[0535] The display unit 7000 can use the light-emitting device of one aspect of the present invention. Thereby, an electronic device with high reliability can be realized.

[0536] Figure 20E and Figure 20F shows an example of a digital sign.

[0537] Figure 20E The digital sign 7300 shown includes a housing 7301, a display unit 7000, a speaker 7303, etc. In addition, it may also include an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, etc.

[0538] Figure 20F shows a digital sign 7400 provided on a cylindrical column 7401. The digital sign 7400 includes a display unit 7000 provided along the curved surface of the column 7401.

[0539] In Figure 20E and Figure 20F the light-emitting device of one aspect of the present invention can be used for the display unit 7000. Thereby, an electronic device with high reliability can be realized.

[0540] The larger the display unit 7000 is, the more information can be provided at one time. The larger the display unit 7000 is, the more likely it is to attract people's attention. For example, the advertising effect can be improved.

[0541] By using a touch panel for the display unit 7000, not only can static images or dynamic images be displayed on the display unit 7000, but also the user can operate intuitively, so it is preferable. In addition, when used for providing information such as route information or traffic information, the usability can be improved through intuitive operations.

[0542] As Figure 20E and Figure 20F shown, the digital sign 7300 or the digital sign 7400 can preferably be linked with an information terminal device 7311 or an information terminal device 7411 such as a smart phone carried by the user through wireless communication. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal device 7311 or the information terminal device 7411. In addition, by operating the information terminal device 7311 or the information terminal device 7411, the display of the display unit 7000 can be switched.

[0543] In addition, a game can be executed on the digital sign 7300 or the digital sign 7400 with the screen of the information terminal device 7311 or the information terminal device 7411 as an operation unit (controller). Thereby, an unspecified number of users can participate in the game simultaneously and enjoy the fun of the game.

[0544] Figures 21A to 21G The electronic device shown includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, a sensor 9007 (the sensor has the function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotational spee...

Claims

1. A light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface, the group of light-emitting devices including: A first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices; A second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices; And A first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices, wherein the light-emitting device includes the first electrode, the second electrode, and the first layer, the second electrode and the first layer overlap the first electrode, the first layer includes a light-emitting layer and an electron injection layer, the electron injection layer is a mixed layer containing a first organic compound and a second organic compound, the first organic compound has strong basicity, the second organic compound has electron-transporting properties, the LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, and the distance between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

2. The light-emitting device according to claim 1, wherein the first organic compound has strong basicity with an acidity coefficient pKa of 8 or more.

3. A light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface, the group of light-emitting devices including: A first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices; A second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices; And A first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices, wherein the light-emitting device includes a first electrode that is one of the first electrode group, the second electrode, and a first layer that is one of the first layer group, the second electrode and the first layer overlap the first electrode, the first layer includes a light-emitting layer and an electron injection layer, the electron injection layer is a mixed layer containing a first organic compound and a second organic compound, the first organic compound has strong basicity, the second organic compound has electron-transporting properties, the LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, the HOMO energy level of the first organic compound is higher than the HOMO energy level of the second organic compound, and the distance between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

4. The light-emitting device according to claim 3, wherein the first organic compound has strong basicity with an acidity coefficient pKa of 8 or more.

5. A light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface, the group of light-emitting devices including: A first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices; a second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices; a first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices; and a second layer located between the first layer group and the second electrode and being a continuous layer shared by the plurality of light-emitting devices, wherein the light-emitting device includes a first electrode of one of the first electrode groups, the second electrode, a first layer of one of the first layer groups, and the second layer, the second electrode, the second layer, and the first layer overlap with the first electrode, the first layer includes a light-emitting layer, the second layer includes an electron injection layer, the electron injection layer is a mixed layer containing a first organic compound and a second organic compound, the first organic compound has strong basicity, the second organic compound has electron transport properties, the LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, and the distance between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

6. The light-emitting device according to claim 5, wherein the first organic compound has strong basicity with an acidity coefficient pKa of 8 or more.

7. A light-emitting device that is one of a group of light-emitting devices formed on the same insulating surface, the group of light-emitting devices including: a first electrode group composed of a plurality of first electrodes that are independent of each other among the plurality of light-emitting devices; a second electrode that is opposite to the first electrode group and is a continuous conductive layer shared by the plurality of light-emitting devices; a first layer group located between the first electrode group and the second electrode and composed of a plurality of first layers that are independent of each other among the plurality of light-emitting devices; and a second layer located between the first layer group and the second electrode and being a continuous layer shared by the plurality of light-emitting devices, wherein the light-emitting device includes a first electrode of one of the first electrode groups, the second electrode, a first layer of one of the first layer groups, and the second layer, the second electrode, the second layer, and the first layer overlap with the first electrode, the first layer includes a light-emitting layer, the second layer includes an electron injection layer, the electron injection layer is a mixed layer containing a first organic compound and a second organic compound, the first organic compound has strong basicity, the second organic compound has electron transport properties, the LUMO energy level of the first organic compound is higher than the LUMO energy level of the second organic compound, the HOMO energy level of the first organic compound is higher than the HOMO energy level of the second organic compound, and the distance between the first layer included in the light-emitting device and the first layer included in other light-emitting devices adjacent to the light-emitting device is 2 μm or more and 5 μm or less.

8. The light-emitting device according to claim 7, wherein the first organic compound has strong basicity with an acidity coefficient pKa of 8 or more.

9. The light-emitting device according to any one of claims 1 to 8, The LUMO energy level of the first organic compound is more than 0.05 eV higher than that of the second organic compound.

10. The light-emitting device according to any one of claims 3, 4, 7, and 8, wherein the LUMO energy level of the first organic compound is more than 0.05 eV higher than that of the second organic compound, and the HOMO energy level of the first organic compound is more than 0.05 eV higher than that of the second organic compound.

11. The light-emitting device according to any one of claims 1 to 8, wherein the LUMO energy level of the first organic compound is -2.50 eV or more and -1.00 eV or less, and the LUMO energy level of the second organic compound is -3.25 eV or more and -2.50 eV or less.

12. The light-emitting device according to any one of claims 1 to 8, wherein the second organic compound is a material having an acid dissociation constant pKa of 4 or more and 8 or less.

13. The light-emitting device according to any one of claims 1 to 8, The spin density of the mixed layer containing the first organic compound and the second organic compound, measured by electron spin resonance method, is 1×10 17 spins / cm 3 or less.

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