Multi-focus pulse light beam parallel processing method and system based on space beam splitting

Abstract

The invention provides a multi-focus pulse light beam parallel processing method and system based on space beam splitting, and relates to the technical field of semiconductor material laser processing, and the method comprises the steps that a laser generator emits pulse laser to a SiC crystal ingot; the light path adjusting unit performs beam splitting and modulation on the pulse laser to obtain multiple beams of sub-pulse laser; the spatial light modulator performs spherical aberration compensation on the multiple beams of sub-pulse laser, performs phase modulation on the sub-pulse laser by adopting a hologram method to generate various target light fields, and modulates the target light fields in real time by switching holograms to obtain multi-focus pulse laser; the laser processing head unit is used for focusing multi-focus pulse laser in the SiC crystal ingot to set the depth; and the motion base station controls the SiC crystal ingot and the multi-focus pulse laser to perform relative motion and adjusts the relative position between the SiC crystal ingot and the laser processing head unit, scanning processing of the SiC crystal ingot is completed on a preset depth and a preset advancing route, and finally a processed wafer is obtained.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor material laser processing, and specifically relates to a multi-focus pulsed beam parallel processing method and system based on spatial beam splitting. Background Art

[0002] The statements in this part merely provide background technical information related to the present disclosure and do not necessarily constitute prior art.

[0003] As a typical representative of the third-generation semiconductor materials, SiC has characteristics such as a band gap of 3.26 eV, a Mohs hardness as high as 9.5, excellent thermal conductivity, and a high breakdown electric field strength. These excellent properties enable SiC to perform well in high-temperature, high-pressure, high-frequency, and high-power application scenarios. For example, it has broad application prospects in fields such as power electronic devices, electric vehicles, high-voltage power transmission and transformation, rail transit, communication base stations, satellite communications, and national defense and military industries. The main manufacturing processes of silicon carbide power devices include crystal growth, slicing, epitaxy, etching, packaging, etc. Crystal slicing is an important process in the manufacturing process, and the slicing quality, slicing efficiency, and material loss directly affect the processing cost and time of the substrate wafer.

[0004] With the development of laser technology and control technology, the ultrafast laser precision processing technology has developed into one of the most important means for cutting new-generation semiconductor materials. Its basic technical idea is to focus a pulsed laser beam inside the SiC ingot. SiC performs non-linear absorption, conversion, and transmission on the laser. When the laser damage threshold of SiC is reached, the SiC structure near the laser focus is damaged, forming a modified part and cracks. The motion control system is used to scan the pulsed laser along a certain path at a predetermined depth inside the SiC. The cracks expand and connect to form a modified layer. Finally, a certain thickness of wafer is obtained by peeling off a part of the SiC ingot with the modified layer as the interface.

[0005] However, the existing control methods in the process of processing SiC ingots still have the following problems:

[0006] 1) In order to improve the peeling quality, the existing method usually processes it multiple times with the same or different paths, which greatly increases the working time and reduces the working efficiency.

[0007] 2) During the cutting process of large-sized ingots, generally, the laser scans and processes along a "zigzag" path at least twice, which has disadvantages such as long time consumption and low efficiency, greatly limiting the application of laser processing technology in industrialization.

[0008] 3) In the face of the problem of excessive processing time, the common countermeasure is to increase the speed of the motion platform. When the motion platform runs at high speed, its stability often decreases, thus seriously affecting the quality of laser processing. Secondly, increase the scanning width. However, there is an extreme value for the scanning distance width. If the scanning distance is too large, the consolidation effect of cracks near the laser focus is poor, increasing the difficulty of peeling and reducing the peeling quality. Currently, there is a lack of better strategies to solve the problem of long processing time for large SiC ingots. Summary of the Invention

[0009] To solve the above problems, the present disclosure proposes a multi-focus pulsed beam parallel processing method and system based on spatial beam splitting. A polarization beam splitter (PBS) is used to split the laser beam, and a spatial light modulator (SLM) is used to compensate for the spherical aberration of the laser beam. Finally, the laser beam is focused onto the focal plane through an objective lens to form multiple focal points, enabling multiple focal point laser pulses to act on the surface of the silicon carbide ingot simultaneously, so as to shorten the peeling time and improve the peeling efficiency.

[0010] According to some embodiments, the present disclosure adopts the following technical solutions:

[0011] A multi-focus pulsed beam parallel processing device based on spatial beam splitting, comprising:

[0012] A laser generator configured to emit pulsed laser towards the SiC ingot;

[0013] An optical path adjustment unit configured to split and modulate the pulsed laser to obtain multiple sub-pulsed laser beams;

[0014] A spatial light modulator configured to compensate for the spherical aberration of multiple sub-pulsed laser beams, and use the hologram method to perform phase modulation on the sub-pulsed laser beams to generate various target light fields, and obtain multi-focus pulsed laser by switching the hologram to modulate the target light field in real time;

[0015] A laser processing head unit configured to focus the multi-focus pulsed laser at a set depth inside the SiC ingot;

[0016] A motion base configured to control the relative movement between the SiC ingot and the multi-focus pulsed laser, and adjust the relative position between the SiC ingot and the laser processing head unit to complete the scanning processing of the SiC ingot on a preset depth and travel route, and finally obtain the processed wafer.

[0017] Further, the laser generator generates processing pulsed laser with a set wavelength and repetition frequency. The optical path adjustment unit modulates the pulsed laser generated by the laser generator to meet the processing conditions. The optical path adjustment unit includes a half-wave plate, a polarization beam splitter prism, and a beam expander. Among them, the half-wave plate and the polarization beam splitter prism form an attenuator, and the rotation angle of the half-wave plate is controlled by a rotation motor to adjust the power, and the adjusted pulsed laser is split by the beam expander;

[0018] Further, it further includes a reflector. The pulsed laser generated by the laser generator passes through the half-wave plate and the polarization beam splitter prism. Only one polarization state exits along the original direction, and a reflecting mirror is arranged in the exiting direction of the other polarization state to adjust the propagation route of the pulsed laser beam of this path to be parallel to the incident pulsed laser beam;

[0019] Further, the spatial light modulator is made of liquid crystal or other materials, adjusts the phase through an external electric field or an optical signal, designs and loads a phase pattern, and compensates for spherical aberration of the light beam by using a specific phase pattern;

[0020] Further, the distance between each focus is adjusted by using the optical field modulation and shaping function of the spatial light modulator. By controlling the distance between the foci, the single scan time is shortened. Through multi-focus processing, multi-path parallel laser pulse scanning processing of the SiC ingot is realized, and the relative position of the pulsed laser and the SiC ingot is adjusted by the motion base module to realize the control of the scanning path and scanning pitch of the SiC ingot.

[0021] According to some embodiments, the present disclosure adopts the following technical solutions:

[0022] A multi-focus pulsed beam parallel processing method based on spatial beam splitting, including:

[0023] The laser generator emits laser pulses with a set wavelength, pulse width, energy, and repetition frequency. After the laser pulses pass through the optical path adjustment unit, multi-focus pulsed laser is obtained, and the pulsed laser passes through the spatial light modulator for spherical aberration compensation; the laser processing head unit focuses the laser with spherical aberration compensation inside the SiC ingot at a set depth for scanning processing, and realizes precise guidance of the spatial position of the multi-focus pulsed laser by controlling the motion base, so as to realize single-time multi-focus pulsed laser parallel processing.

[0024] According to some embodiments, the present disclosure adopts the following technical solutions:

[0025] A computer program product includes a computer program, and when the computer program is executed by a processor, it implements the multi-focus pulsed beam parallel processing method based on spatial beam splitting described above.

[0026] According to some embodiments, the present disclosure adopts the following technical solutions:

[0027] A non-transitory computer-readable storage medium for storing computer instructions, which when executed by a processor, implement the multi-focus pulsed beam parallel processing method based on spatial beam splitting as described above.

[0028] According to some embodiments, the present disclosure adopts the following technical solutions:

[0029] An electronic device includes: a processor, a memory, and a computer program; wherein, the processor is connected to the memory, the computer program is stored in the memory, and when the electronic device runs, the processor executes the computer program stored in the memory to enable the electronic device to implement the multi-focus pulsed beam parallel processing method based on spatial beam splitting as described above.

[0030] Compared with the prior art, the beneficial effects of the present disclosure are:

[0031] The multi-focus pulsed beam parallel processing device of the present disclosure splits the pulse through a polarization beam splitter prism (PBS) and a half-wave plate, compensates the pulse through a spatial light modulator, and focuses the multi-pulse through an objective lens to achieve multi-path parallel processing of a silicon carbide ingot. Moreover, the relative position between the pulsed laser and the silicon carbide ingot can be adjusted through a moving base to control the scanning path and scanning pitch of the silicon carbide ingot. The present invention can achieve the effect of traditional single-focus pulsed laser scanning processing, that is, the scanning times can be reduced each time, the processing time can be greatly reduced, and the processing efficiency can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The accompanying drawings forming a part of this disclosure are used to provide a further understanding of the present disclosure. The schematic embodiments and descriptions thereof of the present disclosure are used to explain the present disclosure and do not constitute an improper limitation of the present disclosure.

[0033] Figure 1 It is a structural diagram of the multi-focus pulsed beam parallel processing device according to an embodiment of the present disclosure;

[0034] Figure 2 It is the scanning path according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0035] The present disclosure will be further described below in conjunction with the accompanying drawings and embodiments.

[0036] It should be noted that the following detailed descriptions are all illustrative and are intended to provide a further description of the present disclosure. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which the present disclosure belongs.

[0037] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present disclosure. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they specify the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0038] Embodiment 1

[0039] In one embodiment of the present disclosure, a multi-focus pulsed beam parallel processing device based on spatial beam splitting is provided, including a laser generator 100 configured to emit pulsed laser towards a SiC ingot;

[0040] An optical path adjustment unit 200 configured to split and modulate the pulsed laser to obtain multiple sub-pulsed lasers;

[0041] A spatial light modulator 300 configured to perform spherical aberration compensation on the multiple sub-pulsed lasers, and use the hologram method to perform phase modulation on the sub-pulsed lasers to generate various target light fields, and obtain multi-focus pulsed laser by switching the hologram to modulate the target light field in real time;

[0042] A laser processing head unit 400 configured to focus the multi-focus pulsed laser at a set depth inside the SiC ingot;

[0043] A motion base 500 configured to control the relative motion between the SiC ingot and the multi-focus pulsed laser, and adjust the relative position between the SiC ingot and the laser processing head unit, and complete the scanning processing of the SiC ingot on a preset depth and travel route, and finally obtain the processed wafer.

[0044] As an embodiment, as Figure 1 shown, the multi-focus pulsed beam parallel processing device includes a laser generator 100, an optical path adjustment unit 200, a spatial light modulator unit 300, a laser processing head unit 400, and a motion base 500. The laser generator 100 is used to generate processing laser pulses with a certain wavelength and repetition frequency; the optical path design unit 200 is used to modulate the processing laser generated by the laser generator 100 to meet the processing conditions. The optical path adjustment unit includes a half-wave plate, a polarization beam splitter prism, and a beam expander. Among them, the half-wave plate and the polarization beam splitter prism form an attenuator, and the rotation angle of the half-wave plate is controlled by a rotation motor to adjust the power, and the adjusted pulsed laser is split by the beam expander.

[0045] It also includes a rearview mirror. The pulsed laser generated by the laser generator passes through a half-wave plate and a polarization beam splitter prism. Only one polarization state exits along the original direction, and the pulsed laser beam of this path is adjusted to be parallel to the incident pulsed laser beam after passing through a reflector in the exit direction of the other polarization state.

[0046] The spatial light modulator unit 300 is used to compensate for the spherical aberration of the laser pulse. Without the spatial light modulator, as the depth increases, the focal point will be elongated. With the spatial light modulator, the focal point can be focused at the target depth.

[0047] The laser processing head unit 400 is used to focus the multi-focus laser compensated by the spatial light modulator 300 at a set depth inside the SiC ingot for scanning processing; by controlling the motion base 500, the silicon carbide ingot is moved in a preset direction, so as to perform scanning processing along the set route.

[0048] The traditional method of laser scanning processing of silicon carbide ingots is to focus the processing laser at a certain depth inside the silicon carbide ingot to form a modified layer, and scan the silicon carbide ingot with the pulsed laser along a preset path, and finally obtain the processed wafer. As Figure 2 shown, the scanning path of the present disclosure is in an "S" shape.

[0049] As an embodiment, as Figure 1 shown, after the laser is emitted by the laser, it passes through a half-wave plate and a PBS. Due to the polarization effect, the laser is divided into two beams. One beam exits along the original direction, and the other beam is perpendicular to the original incident direction. After being reflected by a 45° mirror, the two beams of light are parallel and pass through two beam expanders respectively. After being reflected by the liquid crystal head of the spatial light modulator, they are focused at the center of the 4f lens group, and then reflected by a 45-degree mirror and pass through the center of the numerical aperture of the objective lens, and finally exit from the objective lens.

[0050] As an embodiment, the working principle of the multi-focus pulsed beam parallel processing device based on spatial beam splitting is: the laser generator emits laser pulses with a certain wavelength, pulse width, energy, and repetition frequency. After the laser pulses pass through the optical path adjustment unit, multi-focus pulsed laser is obtained, and the pulsed laser passes through the spatial light modulator unit 300 for spherical aberration compensation. As Figure 2 shown in the processing path, the laser processing head unit focuses the processing laser at a set depth inside the SiC ingot for scanning processing. By controlling the motion base to achieve precise guidance of the spatial position of the multi-focus pulsed laser, single-shot multi-focus pulsed laser parallel processing can be realized.

[0051] In the optical path adjustment unit, there is a half-wave plate and a PBS, and the two constitute an attenuator. By rotating the motor, the rotation angle of the half-wave plate can be precisely controlled to achieve the adjustment of power, and the power between pulsed lasers can be changed. The spatial light modulator (SLM) is an optical device capable of modulating a light beam and can be used to compensate for spherical aberration of the light beam. Specifically, the working process of the multi-focus pulsed beam parallel processing device based on spatial beam splitting is as follows:

[0052] First, prepare a single-focus beam, which can be a high-quality beam from a laser. Then the beam passes through the half-wave plate and the PBS. Only one polarization state exits along the original direction. Add a mirror in the exit direction of the other polarization state to adjust the propagation route of this path of the beam to be parallel to the incident light, and then enter the spatial light modulator, and place the spatial light modulator on the beam path. The SLM is usually made of liquid crystal or other materials and can adjust its phase through an external electric field or an optical signal. Design and load a phase pattern. By using a specific phase pattern, spherical aberration compensation can be performed on the beam. In this way, a compensated double-focus pulse can be obtained. These phase patterns can be generated by a computer and then loaded onto the SLM through an electronic device. Adjust the phase pattern, and use a control system to adjust the phase pattern so that each focus can form the required shape and position. Place a lens system behind the SLM device to focus the compensated foci on the silicon carbide ingot. By selecting an appropriate phase, different required focus positions and focus shapes can be obtained.

[0053] As an embodiment, the above process describes how to obtain a compensated multi-focus beam from a single-focus beam. The specific implementation methods and adjustment steps may vary depending on the actual application and equipment. In addition, to achieve double-pulse parallel processing, the distance between pulses needs to be less than the numerical aperture of the objective lens. Without changing the hardware device, the present invention can meet various processing requirements, improve the processing freedom, and achieve efficient processing of silicon carbide ingots.

[0054] In summary, compared with the traditional single-focus scanning processing method, the multi-focus pulsed beam parallel processing method based on spatial beam splitting only requires half the number of scanning times, greatly shortening the processing time, while also improving the processing stability. Moreover, the present invention can also control the number and energy of foci according to needs, realize controlled and selective scanning processing, greatly improving the processing efficiency and greatly solving the problems of low existing processing efficiency and long processing time.

[0055] Embodiment 2

[0056] An embodiment of the present disclosure provides a multi-focus pulsed beam parallel processing method based on spatial beam splitting, including:

[0057] The laser generator emits laser pulses with a set wavelength, pulse width, energy, and repetition frequency. After passing through the optical path adjustment unit, the laser pulses are converted into multi-focus pulsed lasers. The pulsed lasers are compensated for spherical aberration by a spatial light modulator. The laser processing head unit focuses the laser with spherical aberration compensation inside the SiC ingot at a set depth for scanning processing. By controlling the motion stage, precise guidance of the spatial position of the multi-focus pulsed laser is achieved, realizing single-shot multi-focus pulsed laser parallel processing.

[0058] Among them, a polarizer and a polarization beam splitter prism are used to form an attenuator, which adjusts a single pulsed laser to form multiple sub-pulsed lasers. Subsequently, after spherical aberration compensation by the spatial light modulator, hologram technology is used to perform phase modulation on the incident light to generate various target light fields, and the target light field is modulated in real time by switching the hologram for fast processing.

[0059] As an embodiment, based on the moving speed of the motion stage and the required thickness of the SiC sample, the focal position and the phase compensation map of the spatial light modulator are determined.

[0060] A polarizer and a PBS are used to divide a pulsed laser into multiple sub-pulsed lasers. After compensation by the spatial light modulator, the crack areas at each point of the SiC ingot are scanned.

[0061] The relative motion between the SiC ingot and the multi-focus pulsed laser is controlled by the motion stage to complete the scanning processing of the SiC ingot at a preset depth and travel route. The relative position between the SiC ingot above it and the laser processing head unit is adjusted by the motion stage.

[0062] In this specific embodiment, a polarizer and a PBS are used to form an attenuator, which causes a single pulsed laser to form multiple sub-pulsed lasers. Subsequently, after spherical aberration compensation by the spatial light modulator, a modulated pulsed laser is obtained. The spatial light modulator uses hologram technology to perform phase modulation on the incident light. Through iterative algorithms such as Gerchberg-Saxton, the target phase distribution is converted into a computer-generated hologram in the form of interference fringes. Various target light fields are generated, and the target light field is modulated in real time by switching the hologram for fast processing.

[0063] The light field modulation and shaping function of the spatial light modulator can be used to adjust the distance between the focal points. The distance between the focal points is the scanning pitch of the traditional processing method. In this embodiment, by controlling the distance between the focal points, the focal point pitch is made equal to the scanning pitch of the traditional processing method, and the line pitch is twice the focal point pitch, shortening the single-shot scanning time by half and greatly reducing the processing time.

[0064] Compared with the prior art, in this embodiment, through multi-focus processing, multi-path parallel laser pulses are used to scan and process the SiC ingot, and the relative position between the pulsed laser and the SiC ingot can be adjusted through the motion base module to control the scanning path and scanning spacing of the SiC ingot. The present invention can achieve the effect of traditional single-focus pulsed laser scanning processing in a short time, that is, the processing effect can be achieved with only half of the original number of scans, greatly reducing the processing time and improving the processing efficiency.

[0065] Embodiment 3

[0066] In an embodiment of the present disclosure, a computer program product is provided, including a computer program, and when the computer program is executed by a processor, the multi-focus pulsed beam parallel processing method based on spatial beam splitting as described above is implemented.

[0067] Embodiment 4

[0068] In an embodiment of the present disclosure, a non-transitory computer-readable storage medium is provided, and the non-transitory computer-readable storage medium is used to store computer instructions, and when the computer instructions are executed by a processor, the multi-focus pulsed beam parallel processing method based on spatial beam splitting as described above is implemented.

[0069] Embodiment 5

[0070] In an embodiment of the present disclosure, an electronic device is provided, including: a processor, a memory, and a computer program; wherein, the processor is connected to the memory, the computer program is stored in the memory, and when the electronic device runs, the processor executes the computer program stored in the memory so that the electronic device executes the multi-focus pulsed beam parallel processing method based on spatial beam splitting as described above.

[0071] The present disclosure is described with reference to the flowcharts and / or block diagrams of methods, apparatuses (systems), and computer program products according to embodiments of the present disclosure. It should be understood that each process and / or block in the flowcharts and / or block diagrams, and the combination of processes and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing devices generate a device for implementing the specified functions in one process Figure 1 one process or multiple processes and / or blocks Figure 1 one block or multiple blocks.

[0072] These computer program instructions can also be loaded onto a computer or other programmable data processing apparatus, so that a series of operation steps are executed on the computer or other programmable apparatus to generate a computer-implemented process, thereby the instructions executed on the computer or other programmable apparatus provide steps for realizing the functions specified in one process or a plurality of processes and / or blocks Figure 1 one process or a plurality of processes and / or blocks Figure 1 and / or steps for realizing the functions specified in one block or a plurality of blocks.

[0073] Although the specific embodiments of the present disclosure have been described above in conjunction with the accompanying drawings, they are not intended to limit the protection scope of the present disclosure. Those skilled in the art should understand that, based on the technical solutions of the present disclosure, various modifications or deformations that can be made by those skilled in the art without creative efforts are still within the protection scope of the present disclosure.

Claims

1. A multi-focus pulsed beam parallel processing device based on spatial beam splitting, characterized in that Including: A laser generator configured to emit pulsed laser towards a SiC ingot; An optical path adjustment unit configured to split and modulate the pulsed laser to obtain multiple sub-pulsed lasers; A spatial light modulator configured to perform spherical aberration compensation on the multiple sub-pulsed lasers, and use the hologram method to perform phase modulation on the sub-pulsed lasers, generate various target light fields, and obtain multi-focus pulsed laser by switching the hologram to modulate the target light field in real time; A laser processing head unit configured to focus the multi-focus pulsed laser at a set depth inside the SiC ingot; A moving base configured to control the relative movement between the SiC ingot and the multi-focus pulsed laser, and adjust the relative position between the SiC ingot and the laser processing head unit, and complete the scanning processing of the SiC ingot on a preset depth and travel route to finally obtain the processed wafer.

2. The multi-focus pulsed beam parallel processing device based on spatial beam splitting according to claim 1, characterized in that, The laser generator generates processing pulsed laser with a set wavelength and repetition frequency. The optical path adjustment unit modulates the pulsed laser generated by the laser generator to meet the processing conditions. The optical path adjustment unit includes a half-wave plate, a polarization beam splitter prism, and a beam expander. The half-wave plate and the polarization beam splitter prism form an attenuator, and the power is adjusted by controlling the rotation angle of the half-wave plate by a rotating motor. The adjusted pulsed laser is split by the beam expander.

3. The multi-focus pulsed beam parallel processing device based on spatial beam splitting according to claim 2, wherein, It further includes a reflector. The pulsed laser generated by the laser generator passes through the half-wave plate and the polarization beam splitter prism. Only one polarization state exits along the original direction, and passes through a reflector in the exit direction of the other polarization state to adjust the propagation route of the pulsed laser beam of this path to be parallel to the incident pulsed laser beam.

4. The multi-focus pulsed beam parallel processing device based on spatial beam splitting according to claim 1, wherein, The spatial light modulator is made of liquid crystal or other materials, adjusts the phase through an external electric field or optical signal, designs and loads a phase pattern, and performs spherical aberration compensation on the light beam by using a specific phase pattern.

5. The multi-focus pulsed beam parallel processing device based on spatial beam splitting according to claim 1, characterized in that, Utilize the light field modulation and shaping function of the spatial light modulator to adjust the distance between each focus. By controlling the distance between the foci, the single scan time is shortened. Through multi-focus processing, multi-path parallel laser pulses are used to perform scanning processing on the SiC ingot, and the relative position between the pulsed laser and the SiC ingot is adjusted by the moving base module to achieve the control of the scanning path and scanning pitch of the SiC ingot.

6. A multi-focus pulsed beam parallel processing method based on spatial beam splitting, which is realized by the multi-focus pulsed beam parallel processing device according to any one of claims 1-5, characterized in that, Including: The laser generator emits laser pulses with a set wavelength, pulse width, energy, and repetition frequency. After the laser pulses pass through the optical path adjustment unit, multi-focus pulsed laser is obtained. The pulsed laser passes through the spatial light modulator for spherical aberration compensation. The laser processing head unit focuses the laser with spherical aberration compensation at a set depth inside the SiC ingot for scanning processing, and realizes the precise guidance of the spatial position of the multi-focus pulsed laser by controlling the moving base to achieve single-shot multi-focus pulsed laser parallel processing.

7. The multi-focus pulsed beam parallel processing method based on spatial beam splitting according to claim 6, characterized in that, Including: Use a polarizer and a polarization beam splitter prism to form an attenuator to adjust a single pulsed laser to form multiple sub-pulsed lasers. Subsequently, spherical aberration compensation is performed via the spatial light modulator, and hologram technology is used to perform phase modulation on the incident light to generate various target light fields, and the target light field is modulated in real time by switching the hologram for rapid processing.

8. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the method for parallel processing of a multi-focus pulsed beam based on spatial beam splitting according to any one of claims 6-7.

9. A non-transitory computer-readable storage medium, characterized in that, The non-transitory computer-readable storage medium is used to store computer instructions, which, when executed by a processor, implement the method for parallel processing of a multi-focus pulsed beam based on spatial beam splitting according to any one of claims 6-7.

10. An electronic device, characterized in that, Comprising: A processor, a memory, and a computer program; wherein, the processor is connected to the memory, the computer program is stored in the memory, and when the electronic device runs, the processor executes the computer program stored in the memory, so that the electronic device executes and implements the method for parallel processing of a multi-focus pulsed beam based on spatial beam splitting according to any one of claims 6-7.

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