Luminescent material composition, ink, luminescent device, display panel and display device

Abstract

The invention discloses a luminescent material composition, ink, a luminescent device, a display panel and a display device. The luminescent material composition comprises a first host material and a second host material, and the second host material is configured to be capable of forming an exciplex under the action of external energy. The luminescent material composition provided by the invention can meet the requirements of products with high comprehensive performance.

Description

Technical Field

[0001] The present application relates to the technical field of luminescent materials, and in particular, to a luminescent material composition, an ink, a light-emitting device, a display panel, and a display device. Background Art

[0002] Organic Light Emitting Diodes (OLEDs) have advantages such as a wide color gamut, high color saturation and contrast, and active light emission. They are favored and widely used in display fields and lighting fields of different sizes. In future display and lighting technologies, organic light-emitting devices will become the mainstream with their absolute advantages.

[0003] A typical OLED device has a sandwich structure. Specifically, a stacked structure composed of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer is sandwiched between positive and negative electrodes. When a certain voltage is applied to the two electrodes of the OLED, positively charged carriers (holes) are injected from the anode and the hole injection layer into the light-emitting layer through the hole transport layer, and negatively charged carriers (electrons) are injected from the cathode and the electron injection layer into the light-emitting layer through the electron transport layer. The electrons and holes meet and recombine in the light-emitting layer to generate excitons, and the energy transition of the excitons generates photons, thereby emitting light of a certain wavelength.

[0004] Based on the non-contact Ink-jet Printing (IJP) technology, it is a patterning film-forming technology under atmospheric pressure without a high-precision mask. Due to its simple processing steps, low material loss, lower manufacturing cost, simpler structure, and more convenient patterning process, the IJP technology is very attractive for realizing lightweight, thin, flexible, large-area, and low-cost flexible display devices.

[0005] However, currently, in the face of the demand for high-comprehensive-performance products, there is still a large room for development for IJP OLEDs based on existing luminescent material compositions. Summary of the Invention

[0006] In view of this, the present application provides a luminescent material composition, an ink, a light-emitting device, a display panel, and a display device.

[0007] The embodiments of the present application are implemented as follows:

[0008] In a first aspect, the present application provides a luminescent material composition, including a first host material and a second host material, wherein the second host material is configured to be able to form an exciplex under the action of external energy.

[0009] In a second aspect, the present application further provides an ink, including a solvent and the luminescent material composition.

[0010] In a third aspect, the present application also provides a light-emitting device, including an anode, a light-emitting layer, and a cathode stacked in sequence, wherein the material of the light-emitting layer includes the light-emitting material composition.

[0011] In a fourth aspect, the present application also provides a display panel, where the display panel includes a red pixel unit, and the material of the red pixel unit includes the light-emitting material composition.

[0012] In a fifth aspect, the present application also provides a display device, including the light-emitting device or the display panel.

[0013] The light-emitting material composition described in the present application can meet the product requirements of high comprehensive performance. Description of the Drawings

[0014] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0015] Figure 1 It is a schematic structural diagram of a light-emitting device provided by an embodiment of the present application;

[0016] Figure 2 It is a schematic structural diagram of another light-emitting device provided by an embodiment of the present application.

[0017] Reference Signs:

[0018] Anode 10; Light-emitting layer 20; Cathode 30; Hole transport layer 40; Hole injection layer 50; Electron transport layer 60; Electron injection layer 70. Detailed Embodiments

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, rather than all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this invention belongs. The terms used in the description of the present invention herein are for the purpose of describing specific embodiments only and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0021] In this application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "comprising" means "including but not limited to". The use of terms such as first, second, third, etc. is only for marking purposes and does not impose numerical requirements or establish an order.

[0022] In this application, "and / or" describes the association relationship of associated objects and indicates that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, or B exists alone. Where A and B can be singular or plural.

[0023] In this application, "at least one" means one or more, and "a plurality" means two or more. "One or more", "at least one of the following (items)" or similar expressions refer to any combination of these items, including any combination of single (item) or plural items (items). For example, "at least one of (item) a, b, or c", or, "at least one of (item) a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0024] In this application, when forming another layer "on" a certain layer, the so-called "on" is a broad concept, which can mean that the formed another layer is adjacent to a certain layer, or there may be other spacer structure layers between another layer and a certain layer. For example, when forming a second electrode "on" the first charge carrier functional layer, the so-called "on" can mean that the formed second electrode is adjacent to the first charge carrier functional layer, or there may be other spacer structure layers between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0025] The various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of the present application; therefore, it should be considered that the described range description has specifically disclosed all possible sub-ranges and the individual values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and the individual numbers within that range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0026] In the present invention, "substituted" means that a hydrogen atom in the substituent is replaced by a substituent.

[0027] In the present application, when the connection site is not specified in a group, it means that any optional connection site in the group can be used as the connection site.

[0028] In the present invention, when the same substituent appears multiple times, it can be independently selected from different groups. For example, if the general formula contains multiple R1s, then R1 can be independently selected from different groups.

[0029] In the present invention, "substituted or unsubstituted" means that the defined group can be substituted or unsubstituted. When the defined group is substituted, it should be understood that the defined group can be substituted by one or more substituents R, and the R is selected from but not limited to: deuterium atom, cyano group, isocyano group, nitro group or halogen, C1-30 alkyl group, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, heteroaromatic group containing 5-20 ring atoms, -NR’R”, silyl group, carbonyl group, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, halocarbonyl group, formyl group, isocyanate group, thiocyanate group, isothiocyanate group, hydroxyl group, trifluoromethyl group, and the above groups can also be further substituted by substituents acceptable in the art; it can be understood that in -NR’R”, R’ and R” are independently selected from but not limited to: H, deuterium atom, cyano group, isocyano group, nitro group or halogen, C1-10 alkyl group, heterocyclic group containing 3-20 ring atoms, aromatic group containing 6-20 ring atoms, heteroaromatic group containing 5-20 ring atoms.

[0030] In the present invention, "the number of ring atoms" refers to the number of atoms among the atoms constituting the ring itself in a structural compound obtained by bonding atoms into a ring (for example, a monocyclic compound, a fused-ring compound, a crosslinked compound, a carbocyclic compound, a heterocyclic compound). When the ring is substituted with a substituent, the atoms contained in the substituent are not included in the ring-forming atoms. The same applies to the "number of ring atoms" described below unless otherwise specified. For example, the number of ring atoms in a benzene ring is 6, the number of ring atoms in a naphthalene ring is 10, and the number of ring atoms in a thienyl group is 5.

[0031] "Aryl or aromatic group" refers to an aromatic hydrocarbon group derived by removing one hydrogen atom from an aromatic ring compound, which can be a monocyclic aryl group, a fused-ring aryl group, or a polycyclic aryl group. For polycyclic ring species, at least one is an aromatic ring system. For example, "substituted or unsubstituted aryl group having 6 to 40 ring atoms" refers to an aryl group containing 6 to 40 ring atoms, preferably a substituted or unsubstituted aryl group having 6 to 30 ring atoms, more preferably a substituted or unsubstituted aryl group having 6 to 18 ring atoms, particularly preferably a substituted or unsubstituted aryl group having 6 to 14 ring atoms, and the aryl group is optionally further substituted; suitable examples include but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthryl, phenanthryl, fluoranthenyl, triphenylenyl, pyrenyl, perylenyl, tetracenyl, fluorenyl, binaphthylenyl, acenaphthylenyl and their derivatives. It can be understood that multiple aryl groups can also be interrupted by short non-aromatic units (for example, <10% non-H atoms, such as C, N or O atoms), specifically such as acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, diaryl ether systems should also be included in the definition of aryl groups.

[0032] "Heteroaryl or heteroaromatic group" means that on the basis of an aryl group, at least one carbon atom is replaced by a non-carbon atom, and the non-carbon atom can be an N atom, an O atom, an S atom, etc. For example, "substituted or unsubstituted heteroaryl having 5 to 40 ring atoms" means a heteroaryl having 5 to 40 ring atoms, preferably a substituted or unsubstituted heteroaryl having 6 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl having 6 to 18 ring atoms, particularly preferably a substituted or unsubstituted heteroaryl having 6 to 14 ring atoms, and the heteroaryl is optionally further substituted. Suitable examples include, but are not limited to: thienyl, furyl, pyrrolyl, imidazolyl, triazolyl, imidazolyl, dioxazolyl, triazolyl, pyridyl, bipyridyl, pyrimidinyl, triazinyl, triazolyl, acridinyl, pyridazinyl, pyrazinyl, quinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, pyrazinopyrazinyl, isoquinolinyl, indolyl, carbazolyl, benzothienyl, benzofuryl, indolyl, carbazolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienothienyl, furanopyrrolyl, furanofuryl, thienofuryl, benzisoxazolyl, benzisothiazolyl, benzimidazolyl, quinolinyl, isoquinolinyl, phthalazinyl, quinoxalinyl, phenanthridinyl, peridinyl, quinazolinyl, quinazolinone, dibenzothienyl, dibenzofuryl, carbazolyl and its derivatives.

[0033] In the present invention, "alkyl" may represent a straight-chain or branched-chain alkyl. The number of carbon atoms in the alkyl may be 1 to 50, 1 to 30, 1 to 20, 1 to 10, or 1 to 6. A phrase containing this term, for example, "C1-9 alkyl" refers to an alkyl containing 1 to 9 carbon atoms, and each occurrence may independently be a C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyl octyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, 2-ethylhexadecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, 2-ethyleicosyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-heneicosyl, n-docosyl, n-tricosyl, n-tetracosyl, n-pentacosyl, n-hexacosyl, n-heptacosyl, n-octacosyl, n-nonacosyl, n-triacontyl, adamantane, etc.

[0034] In the present application, "alkoxy" refers to a group having the structure "-O-alkyl", that is, the alkyl as defined above is connected to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), and tert-butoxy (-O-C(CH3)3 or -OtBu).

[0035] Current OLEDs are mainly prepared based on vacuum evaporation technology, which requires high-cost and high-energy-consuming equipment such as high-vacuum evaporation machines and high-cost consumables such as high-precision metal masks. There are still challenges in the low-cost, large-area, and energy-saving manufacturing of medium and large-sized display panels. The non-contact ink-jet printing technology (IJP) is a pattern-forming film technology under atmospheric pressure without a mask. Due to its simple processing steps, low material loss, lower manufacturing cost, simpler structure, and more convenient patterning process, the ink-jet printing technology is very attractive for realizing flexible display devices that are light, thin, flexible, large-area, and low-cost. At present, in the face of the product requirements of high efficiency and long life, IJP OLED (printed OLED) still has certain room for development.

[0036] In an actual display panel, the materials of the hole functional layer and the electron functional layer remain fixed in terms of material and ratio according to the final panel performance requirements and mass production process technology, and only the thickness is adjusted. However, in fact, the charge balance required for each functional color R / G / B is different. Therefore, for actual display requirements, there will be certain trade-offs. Since the lifetime of the blue unit in the current IJP OLED panel is relatively the lowest, it is necessary to prevent color shift of the panel caused by the decay of the blue unit lifetime. Therefore, the current charge balance scheme tends to ensure the device performance of the blue unit. Among the R / G / B three light-emitting units, the main material of green phosphorescence is currently a mixture of p-type and n-type materials, so the charge balance can be adjusted by changing the ratio of the main materials. The red phosphorescent material is a single host material, and under the unified evaporation structure, it is still difficult to adjust the charge balance, and the charge balance limits the comprehensive performance of the current red phosphorescent devices.

[0037] In solution-processed devices, the exciton recombination region is generally dispersed throughout the light-emitting layer. However, the recombination region is affected by the electron-hole balance. A single red host material is prone to triplet energy accumulation, which may cause serious TTA (triplet-triplet annihilation upconversion) and TPQ (triplet-polaron annihilation). Severe TTA and TPQ will greatly reduce the performance and lifetime of the device, thereby reducing the device performance in many aspects.

[0038] The technical solution of this application is as follows:

[0039] In a first aspect, an embodiment of this application provides a luminescent material composition, including a first host material and a second host material, wherein the second host material is configured to be able to form an exciplex under the action of external energy.

[0040] The second host material includes an electron donor material (EDM) and an electron acceptor material (EAM). The electron donor material and the electron acceptor material are configured to be able to form an exciplex under the action of external energy.

[0041] It is understood that the external energy includes one or more of photoexcitation and thermal activation.

[0042] In some embodiments, the luminescent material composition further includes a dopant material.

[0043] In some embodiments, the emission peak wavelength of the dopant material is 580 - 650 nm, for example, 580 nm, 590 nm, 600 nm, 610 nm, 620 nm, 630 nm, 640 nm, 650 nm, etc.

[0044] In some embodiments, the triplet energy of the first host material is 2.0 - 3.0 eV, for example, 2 eV, 2.1 eV, 2.2 eV, 2.3 eV, 2.4 eV, 2.5 eV, 2.6 eV, 2.7 eV, 2.8 eV, 2.9 eV, 3.0 eV, etc.

[0045] In some embodiments, the triplet energy of the second host material is 2.3 - 3.0 eV, for example, 2.3 eV, 2.4 eV, 2.5 eV, 2.6 eV, 2.7 eV, 2.8 eV, 2.9 eV, 3.0 eV, etc.

[0046] The triplet energy of the exciplex is higher than that of the first host material.

[0047] The luminescent material composition described in this application includes the first host material, the second host material, and the dopant material, that is, the luminescent material composition of this application includes a dual host material and a dopant material. When the luminescent material composition is used for luminescence, the energy transfer paths during the luminescence process include at least the following 3 paths: the first path is that energy is directly transferred from the first host material to the dopant material, the second path is that energy is transferred from the second host material to the first host material and then to the dopant material, and the third path is that energy is directly transferred from the second host material to the dopant material. Such energy transfer will not cause large - area energy accumulation. The second host material acts as a diluent, diluting the triplet energy with too high a concentration, and at the same time avoiding the inevitable energy loss during the transfer of a single exciplex.

[0048] In addition, for a single host material, for carrier injection, the carriers only need to cross the potential barrier between the transport layer and the light-emitting layer, and a large number of carriers will be injected into the light-emitting layer relatively quickly and smoothly, which will cause certain difficulties in adjusting the carrier balance. At the same time, due to the unified evaporation conditions of the printed display panel including the three light-emitting units of R / G / B without a blocking layer, there will be a phenomenon of charge imbalance caused by too many electrons or holes in the red light-emitting unit; and the present application introduces a second host material into the first host material, so that the carriers need to cross different potential barriers to finally reach the exciton recombination center, which can increase additional carrier pathways and effectively improve the charge balance inside the device.

[0049] In some embodiments, the first body material includes one or more of a P-type body material, an N-type body material, and a bipolar body material.

[0050] It should be noted that the P-type main material is a main material with hole transport polarity, in other words, the P-type main material refers to a main material that can accept holes; the N-type main material is a main material with electron transport polarity, in other words, the N-type main material refers to a main material that can accept electrons; the bipolar main material refers to a main material that has both hole transport polarity and electron transport polarity, in other words, the bipolar main material refers to a main material that can accept both electrons and holes.

[0051] In some embodiments, in the luminescent material composition, the content of the first host material is 1-30wt%, for example, 1wt%, 3wt%, 5wt%, 8wt%, 10wt%, 12wt%, 13wt%, 15wt%, 16wt%, 18wt%, 20wt%, 22wt%, 23wt%, 25wt%, 28wt%, 30wt% and the like; the content of the second host material is 55-84wt%, for example, 55wt%, 58wt%, 60wt%, 65wt%, 70wt%, 75wt%, 80wt%, 82wt%, 84wt% and the like; the content of the guest material is 1-15wt%, for example, 1wt%, 2wt%, 3wt%, 5wt%, 6wt%, 8wt%, 10wt%, 12wt%, 13wt%, 15wt% and the like. Within the range, the high-concentration triplet state of the first host material can be effectively diluted, TTA can be avoided, an auxiliary effect can be provided on the carrier balance inside the device, and the device performance can be improved.

[0052] In some embodiments, in the second host material, the content of the electron donor material is 10-90 wt%, for example, 10 wt%, 20 wt%, 30 wt%, 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt%, 90 wt%, etc.; the content of the electron acceptor material is 10-90 wt%, for example, 10 wt%, 20 wt%, 30 wt%, 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt%, 90 wt%, etc. Within this content range, during the light emission process, an exciplex can be effectively formed, thereby synergistically transferring energy.

[0053] The highest occupied molecular orbital (HOMO) energy of the first host material is E HOMO (H), and the lowest unoccupied molecular orbital (LUMO) energy is E LUMO (H).

[0054] The highest occupied molecular orbital (HOMO) energy of the EDM is E HOMO (D), and the lowest unoccupied molecular orbital (LUMO) energy of the EDM is E LUMO (D).

[0055] The highest occupied molecular orbital (HOMO) energy of the EAM is E HOMO (A), and the lowest unoccupied molecular orbital (LUMO) energy of the EAM is E LUMO (A).

[0056] In some embodiments, |E LUMO (D)-E LUMO (A)|≥0.25 eV, |E HOMO (D)-E HOMO (A)|≥0.25 eV. In other words, the absolute value of the difference between the LUMO energy level of the electron donor material and the LUMO energy level of the electron acceptor material is greater than or equal to 0.25 eV, and the absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the electron acceptor material is greater than or equal to 0.25 eV. In this way, it can be ensured that a sufficient amount of exciplex can be efficiently generated.

[0057] In some embodiments, the absolute value of the difference between the LUMO energy level of the electron donor material and the LUMO energy level of the electron acceptor material is greater than or equal to 0.25 eV, and the absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the electron acceptor material is greater than or equal to 0.25 eV.

[0058] In some embodiments, |E HOMO (D)-E HOMO (H)|≤0.3 eV, |E LUMO (A)-ELUMO (H)∣≤0.3eV. In this way, it is possible to ensure that there is no potential barrier hindering carrier injection.

[0059] In some embodiments, the absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first host material is less than or equal to 0.3eV, and the absolute value of the difference between the LUMO energy level of the electron acceptor material and the LUMO energy level of the first host material is less than or equal to 0.3eV.

[0060] In some embodiments, the triplet energy (T1D) of the electron donor material, the triplet energy (T1A) of the electron acceptor material, and the triplet energy (T1H) of the first host material are all greater than the triplet energy (T1ph) of the guest material, that is, T1D>T1ph, T1A>T1ph, T1H>T1ph. In this way, it is possible to prevent the exciton of the guest material from transferring energy to the host triplet state and quenching.

[0061] In some embodiments, the triplet energy of the exciplex and the triplet energy of the first host material are both greater than the triplet energy of the guest material.

[0062] The electron donor material has a structure shown in the following formula (I):

[0063]

[0064] Wherein,

[0065] Ar1 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms;

[0066] K is a hole transport unit;

[0067] m1 is selected from any integer from 1 to 6.

[0068] In some embodiments, K is selected from one or more of the following structures:

[0069]

[0070] Wherein, Ar 11 is selected from a substituted or unsubstituted aromatic group having 6 to 40 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 40 carbon atoms;

[0071] Y1 and Y2 are each independently selected from a single bond, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4), or P(R3); wherein, R1, R2, R3, and R4 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

[0072] In at least some embodiments, each of Ar1 and K is independently selected from one or more of the following structures:

[0073]

[0074] Wherein,

[0075] Y1 and Y2 are selected from a single bond, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4), or P(R3);

[0076] R1, R3, and R4 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

[0077] It should be noted that any connectable site in the above groups can be used as a connection site.

[0078] As an example, in some embodiments, the electron donor material includes at least one of the compounds represented by the following structural formulas:

[0079]

[0080]

[0081] The electron acceptor material has the structure shown in the following formula (II):

[0082]

[0083] Wherein, Ar2 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms;

[0084] A is an electron transport unit;

[0085] m2 is an integer selected from 1 to 6.

[0086] In some of these embodiments, the electron transport unit A in general formula (II) is selected from one or more of F, cyano, or the following groups:

[0087]

[0088] wherein,

[0089] a is 1, 2, or 3;

[0090] X 1 to X 8 are each independently selected from CR7 or N, and at least one of them is N;

[0091] M 1 、M 2 、M 3 each independently represents N(R7), C(R7R8), Si(R7R8), O, C═N(R7), C═C(R7R8), P(R7),

[0092] P(═O)R7, S, S═O, SO2, or none;

[0093] R5, R6, R7, R8 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

[0094] It should be noted that "none" means that there is no such group, and the benzene rings are not connected.

[0095] In at least some embodiments, the electron transport unit A is selected from

[0096] It should be noted that any connectable site in the above groups can be used as a connection site.

[0097] As an example, in some embodiments, the electron acceptor material includes one or more of the compounds represented by the following structural formulas:

[0098]

[0099]

[0100] In some embodiments, the first host material includes one or more of the following groups:

[0101]

[0102] Wherein:

[0103] Each occurrence of v and n is independently an integer from 1 to 10;

[0104] Each occurrence of X1 is independently selected from C and N, and at least one of the rings having X1 is N;

[0105] Y is selected from a single bond, N(R9), C(R9R 10 ), Si(R9R 10 ), O, S, C=N(R9), C=C(R9R 10 ), or P(R9), wherein R9 and R 10 are each independently selected from substituted or unsubstituted alkyl groups having 1 to 30 carbon atoms, substituted or unsubstituted alkoxy groups having 1 to 30 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 30 carbon atoms, substituted or unsubstituted aromatic groups having 6 to 60 ring atoms, or substituted or unsubstituted heteroaromatic groups having 5 to 60 ring atoms;

[0106] Ar 1 、Ar 2 、Ar 3 are each independently selected from substituted or unsubstituted aromatic groups or heteroaromatic groups having 5 to 30 ring atoms, or substituted or unsubstituted non-aromatic ring groups having 5 to 30 ring atoms;

[0107] R is selected from hydrogen, deuterium, halogen atoms, cyano groups, alkyl groups, alkoxy groups, amino groups, alkenyl groups, alkynyl groups, aralkyl groups, heteroalkyl groups, aryl groups or heteroaryl groups. The halogen atoms are selected from F, Cl, Br or I.

[0108] It should be noted that any connectable site in the above groups can be used as a connection site.

[0109] In some embodiments, the bipolar host material contains one or more of the groups represented by the following formulas (III-1), (III-2) and (III-3):

[0110]

[0111] Wherein, X is selected from C and N, and at least one X is N;

[0112] When R 11 、R 12 each occurrence is selected from substituted or unsubstituted aromatic groups or heteroaromatic groups having 5 to 40 ring atoms, or aryloxy or heteroaryloxy groups having 5 to 40 ring atoms, or a combination of these systems, and adjacent R1 and R2 can be connected to form a ring;

[0113] When R13 , R 14 , R 15 , R 16 , R 17 , R 18 , R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 Each time it appears, it is independently selected from H, or D, or a straight-chain alkyl, alkoxy or thioalkoxy group having 1 to 20 C atoms, or a branched or cyclic alkyl, alkoxy or thioalkoxy group having 3 to 20 C atoms, or a silyl group, or a keto group having 1 to 20 C atoms, or an alkoxycarbonyl group having 2 to 20 C atoms, or an aryloxycarbonyl group having 7 to 20 C atoms, CF3, Cl, Br, F, or a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 40 ring atoms, or an aryloxy or heteroaryloxy group having 5 to 40 ring atoms, or a combination of these systems. Adjacent R 13 , R 14 , R 15 , R 16 , R 17 , R 18 can be connected to each other to form a ring. Adjacent R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 can be connected to each other to form a ring.

[0114] R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 At least one of them has the following structural formula (III-4);

[0115]

[0116] wherein, Ar3 and Ar4 are each independently selected from a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 30 ring atoms, or a substituted or unsubstituted non-aromatic cyclic group having 5 to 30 ring atoms;

[0117] L1 is selected from a single bond, a substituted or unsubstituted aryl or heteroaryl having 5 to 30 ring atoms, or a substituted or unsubstituted non-aromatic cyclic group having 5 to 30 ring atoms;

[0118] Any two adjacent groups among Ar3, Ar4, and L1 can be connected to each other to form a ring.

[0119] In some embodiments, the bipolar host material includes one or more of the compounds represented by the following structural formulas:

[0120]

[0121]

[0122] Wherein, the hydrogen atoms in the above structural formulas can be further substituted by any substituent.

[0123] In some embodiments, the N-type host material includes one or more of the compounds represented by the following structural formulas:

[0124]

[0125] Wherein, the hydrogen atoms in the above structural formulas can be further substituted by any substituent.

[0126] In some embodiments, the P-type host material includes one or more of the compounds represented by the following structural formulas:

[0127]

[0128] Wherein, the hydrogen atoms in the above structural formulas can be further substituted by any substituent.

[0129] In some embodiments, the guest material is selected from one or more of a phosphorescent guest material, a fluorescent guest material, and a thermally activated delayed fluorescence (TADF) material.

[0130] The phosphorescent guest material can be selected from, but not limited to, one or more of an iridium-containing phosphorescent guest material and a platinum-containing phosphorescent guest material.

[0131] As an example, in some embodiments, the iridium-containing phosphorescent guest material can be selected from, but not limited to, one or more of Ir(piq)2acac, Ir(hpiq)3, (pq)2Ir(acac), and (bpiq)2Ir(acac).

[0132] In a second aspect, embodiments of the present application further provide an ink, including a solvent and the luminescent material composition described above.

[0133] In the ink, the mass percentage content of the luminescent material composition is 1-10%, for example, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, etc. Within this concentration range, the ink can have a good film-forming effect.

[0134] The solvent is selected from at least one of aromatic or heteroaromatic-based solvents, ester-based solvents, aromatic ketone-based solvents, aromatic ether-based solvents, aliphatic ketones, aliphatic ethers, alicyclic compounds, olefinic compounds, borate compounds, and phosphate compounds.

[0135] In at least one embodiment, the solvent is selected from aromatic or heteroaromatic-based solvents.

[0136] The aromatic or heteroaromatic-based solvent can be selected from, but not limited to, p-diisopropylbenzene, pentylbenzene, tetralin, cyclohexylbenzene, chloronaphthalene, 1,4-dimethylnaphthalene, 3-isopropylbiphenyl, p-methylcumene, dipentylbenzene, tripentylbenzene, amyltoluene, o-diethylbenzene, m-diethylbenzene, p-diethylbenzene, 1,2,3,4-tetramethylbenzene, 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, butylbenzene, dodecylbenzene, dihexylbenzene, dibutylbenzene, p-diisopropylbenzene, cyclohexylbenzene, benzylbutylbenzene, dimethylnaphthalene, 3-isopropylbiphenyl, p-methylcumene, 1-methylnaphthalene, 1,2,4-trichlorobenzene, 4,4-difluorodiphenylmethane, 1,2-dimethoxy-4-(1-propenyl)benzene, diphenylmethane, 2-phenylpyridine, 3-phenylpyridine, N-methyldiphenylamine, 4-isopropylbiphenyl, α,α-dichlorodiphenylmethane, 4-(3-phenylpropyl)pyridine, benzyl benzoate, 1,1-bis(3,4-dimethylphenyl)ethane, 2-isopropylnaphthalene, quinoline, isoquinoline, methyl 2-furoate, and ethyl 2-furoate.

[0137] The ester-based solvent can be selected from, but not limited to, alkyl octanoates, alkyl sebacates, alkyl stearates, alkyl benzoates, alkyl phenylacetates, alkyl cinnamates, alkyl oxalates, alkyl maleates, alkanolactones, alkyl oleates, etc. At least one of octyl octanoate, diethyl sebacate, diallyl phthalate, and isononyl isononanoate is particularly preferred.

[0138] The aromatic ketone-based solvent can be selected from, but not limited to, 1-tetralone, 2-tetralone, 2-(phenyloxiranyl)tetralone, 6-(methoxy)tetralone, acetophenone, propiophenone, benzophenone, and their derivatives. Among them, as examples, the derivatives can be selected from, but not limited to, 4-methylacetophenone, 3-methylacetophenone, 2-methylacetophenone, 4-methylpropiophenone, 3-methylpropiophenone, and 2-methylpropiophenone.

[0139] The aromatic ether-based solvent may be selected from, but not limited to, at least one of 3-phenoxytoluene, butoxybenzene, anisaldehyde dimethyl acetal, tetrahydro-2-phenoxy-2H-pyran, 1,2-dimethoxy-4-(1-propenyl)benzene, 1,4-benzodioxane, 1,3-dipropylbenzene, 2,5-dimethoxytoluene, 4-ethylbenzyl ether, 1,3-dipropoxybenzene, 1,2,4-trimethoxybenzene, 4-(1-propenyl)-1,2-dimethoxybenzene, 1,3-dimethoxybenzene, glycidyl phenyl ether, dibenzyl ether, 4-tert-butylanisole, trans-p-anisylpropene, 1,2-dimethoxybenzene, 1-methoxynaphthalene, diphenyl ether, 2-phenoxymethyl ether, 2-phenoxytetrahydrofuran, and ethyl-2-naphthyl ether.

[0140] The aliphatic ketone-based solvent may be selected from, but not limited to, at least one of 2-nonanone, 3-nonanone, 5-nonanone, 2-decanone, 2,5-hexanedione, 2,6,8-trimethyl-4-nonanone, fenchone, phorone, isophorone, di-n-pentyl ketone, etc.; or aliphatic ethers, such as pentyl ether, hexyl ether, dioctyl ether, ethylene glycol dibutyl ether, diethylene glycol diethyl ether, diethylene glycol butyl methyl ether, diethylene glycol dibutyl ether, triethylene glycol dimethyl ether, triethylene glycol ethyl methyl ether, triethylene glycol butyl methyl ether, tripropylene glycol dimethyl ether, and tetraethylene glycol dimethyl ether.

[0141] It can be understood that the solvent can be used alone or as a mixed solvent of two or more solvents.

[0142] In some embodiments, the solvent suitable for the present application is a solvent with Hansen solubility parameters in the following ranges:

[0143] δd (dispersion force) is in the range of 17.0 - 23.2 MPa1 / 2, especially in the range of 18.5 - 21.0 MPa1 / 2;

[0144] δp (polar force) is in the range of 0.2 - 12.5 MPa1 / 2, especially in the range of 2.0 - 6.0 MPa1 / 2;

[0145] δh (hydrogen bonding force) is in the range of 0.9 - 14.2 MPa1 / 2, especially in the range of 2.0 - 6.0 MPa1 / 2.

[0146] In some embodiments, for the composition of the present application, the boiling point of the solvent needs to be considered when selecting the solvent. In at least some embodiments, the boiling point of the solvent ≥ 150 °C; preferably ≥ 180 °C; more preferably ≥ 200 °C; even more preferably ≥ 250 °C. The boiling points within these ranges are beneficial for preventing nozzle blockage of the inkjet print head.

[0147] It is understandable that the solvent can evaporate from the solvent system to form a thin film including the organic compound.

[0148] In some embodiments, the surface tension of the ink at 25 °C ranges from 19 dyne / cm to 60 dyne / cm, for example, from 22 dyne / cm to 55 dyne / cm, or from 25 dyne / cm to 40 dyne / cm, or from 30 dyne / cm to 40 dyne / cm.

[0149] In some embodiments, the viscosity of the ink at 25 °C ranges from 1 cps to 100 cps, for example, from 1 cps to 10 cps, from 1 cps to 50 cps, or from 1.5 cps to 20 cps, or from 2.0 cps to 15 cps.

[0150] In a third aspect, an embodiment of the present application further provides a light-emitting thin film, which includes the above-mentioned light-emitting material composition, or the light-emitting thin film is prepared from the above-mentioned ink through a film-forming process.

[0151] In at least one embodiment, the film-forming process is a solution method, and the solution method can be spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion method, spraying, roll coating, casting, slot die coating, bar coating, etc.

[0152] In a fourth aspect, please refer to Figure 1 , in some embodiments, an embodiment of the present application further provides a light-emitting device 100, which includes an anode 10, a light-emitting layer 20, and a cathode 30. The material of the light-emitting layer 20 includes the above-mentioned light-emitting material composition.

[0153] Please refer to Figure 2 , in one embodiment, the light-emitting device 100 further includes a hole transport layer 40 located between the anode 10 and the light-emitting layer 20. In other words, the light-emitting device 100 includes an anode 10, a hole transport layer 40, a light-emitting layer 20, and a cathode 30 stacked in sequence.

[0154] In one embodiment, the light-emitting device 100 further includes a hole injection layer 50 located between the anode 10 and the hole transport layer 40.

[0155] In one embodiment, the light-emitting device 100 further includes an electron transport layer 60 located between the light-emitting layer 20 and the cathode 30.

[0156] In one embodiment, the light-emitting device 100 further includes an electron injection layer 70 located between the electron transport layer 60 and the cathode 30.

[0157] The anode 10 and the cathode 30 are electrodes known in the art for light-emitting devices. For example, they can independently include, but are not limited to, doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The materials of the doped metal oxide electrodes can include, but are not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by laminating two or more conductive material layers. For example, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / APC / ITO, IZO / Ag / IZO, IZO / APC / IZO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. Herein, " / " represents a laminated structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer, and an AZO layer laminated in sequence. The materials of the elemental metal electrodes can include, but are not limited to, one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrodes include, but are not limited to, Au:Mg alloy electrodes and Ag:Mg alloy electrodes.

[0158] In some embodiments, the anode is an electrode with a relatively high work function. For example, it can include, but is not limited to, a doped metal oxide electrode with a relatively high work function, an elemental metal electrode with a relatively high work function, and a carbon nanotube electrode. The elemental metal electrode with a relatively high work function can be selected from, but is not limited to, Ni, Pt, Au, Ag, Ir, etc.

[0159] In some embodiments, the cathode is an electrode with a relatively low work function. For example, it can include, but is not limited to, an elemental metal electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The elemental metal electrode with a relatively low work function can be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function can be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrodes with a relatively low work function are Au:Mg and Ag:Mg, etc.

[0160] The material of the hole transport layer 40 can be a material known in the art for hole transport layers, and can also be a hole transport material sold by commercial companies. For example, it can be selected from, but not limited to, HTM014 (manufactured by Merck), HTM081 (manufactured by Merck), HTM163 (manufactured by Merck), HTM222 (manufactured by Merck), NHT-5 (manufactured by Novaled), NHT-18 (manufactured by Novaled), NHT-49 (manufactured by Novaled), NHT-51 (manufactured by Novaled), EL-301 (manufactured by Hodogaya), EL-22T (manufactured by Hodogaya), 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro-NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctoxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',One or more of N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO.,

[0161] The material of the hole injection layer 50 may be a material known in the art for hole injection layers, and may also be a hole injection material sold by commercial companies. For example, it may be selected from, but not limited to, NDP-2 (manufactured by Novaled), NDP-9 (manufactured by Novaled), NHT-51 (manufactured by Novaled), F4-TCNQ, F6-TCNNQ, tetrafluorotetracyanoquinodimethane, 7,7,8,8-tetracyano-p-benzoquinodimethane, 4,4',4”-tris(2-naphthylphenylamino)triphenylamine (m-MTDATA), perylene tetracarboxylic dianhydride, pentacene, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetrafluorotetracyanoquinodimethane (F4-TCQN), copper phthalocyanine, copper hexadecafluorophthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide, and one or more of them.

[0162] The material of the electron transport layer 60 is a material known in the art for electron transport layers and can also be an electron transport material sold by commercial companies. For example, it can be selected from one or more of inorganic electron transport materials and organic electron transport materials. The inorganic electron transport materials include, but are not limited to, one or more of doped metal oxide particles, undoped metal oxide particles, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The metal oxides in the undoped metal oxide particles include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxide include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, and the doping elements in the doped metal oxide include, but are not limited to, one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn. By way of example, the doped metal oxide can be aluminum-doped zinc oxide (AZO), lithium-doped zinc oxide (LZO), magnesium-doped zinc oxide (MZO), tin-doped zinc oxide (Sn-ZnO), etc. The ceramic semiconductor materials include, but are not limited to, barium titanate. The IIB-VIA group semiconductor materials include, but are not limited to, one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include, but are not limited to, one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include, but are not limited to, one or more of CuInS, CuGaS. The organic electron transport materials include, but are not limited to, one or more of NET-164 (manufactured by Novaled), NDN-87 (manufactured by Novaled), NDN-45 (manufactured by Novaled), NDN-18 (manufactured by Novaled), NDN-218 (manufactured by Novaled), ET093 (manufactured by Idemitsu Kosan), ETM020 (manufactured by Merck), ETM033 (manufactured by Merck), ETM034 (manufactured by Merck), ETM036 (manufactured by Merck), 4,6-bis(3,5-bis(pyridin-3-yl)phenyl)-2-methylpyrimidine, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, 1,3,5-tris(1-phenyl-1H-benzoimidazol-2-yl)benzene, tris(8-hydroxyquinoline)aluminum, lithium 8-hydroxyquinolate, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-olato)aluminum, ionic conjugated polyelectrolytes.

[0163] The material of the electron injection layer 70 may be a material known in the art for electron injection layers, and may be selected from, for example, but not limited to, one or more of Yb (ytterbium), yttrium fluoride, Li, LiF, NaF, CsCO3, Cs, KBH4, and KH.

[0164] It can be understood that the light-emitting device 100 may further be provided with some functional layers that are conventionally used in light-emitting devices and are helpful for improving the performance of the light-emitting device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0165] It can be understood that the materials of the respective layers of the light-emitting device 100 can be adjusted according to the light-emitting requirements of the light-emitting device 100.

[0166] In some embodiments, the light-emitting device 100 further includes a substrate, and the substrate is disposed on a side of the anode 10 away from the light-emitting layer 20, or the substrate is disposed on a side of the cathode 30 away from the light-emitting layer 20.

[0167] The substrate may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may include, but is not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0168] It can be understood that the light-emitting device 100 may be a normal light-emitting device or an inverted light-emitting device. The light-emitting device 100 may be an organic light-emitting device.

[0169] The light-emitting layer 20 of the light-emitting device 100 includes the light-emitting material composition described in the present application, and thus has a long lifespan.

[0170] In a fifth aspect, an embodiment of the present application further provides a display panel, the display panel includes a red pixel unit, and the material of the red pixel unit includes the light-emitting material composition.

[0171] In some embodiments, the display panel further includes one or more of a green pixel unit and a blue pixel unit.

[0172] In a sixth aspect, the present application further relates to a display device, and the display device includes the light-emitting device 100.

[0173] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0174] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application. The raw materials used in the following embodiments are all commercially available products unless otherwise specified.

[0175] Embodiment 1

[0176] Provide an ITO / Ag / ITO anode 10 with layer thicknesses of 7 nm / 110 nm / 10 nm respectively;

[0177] Deposit an NHT-51:NDP-9 hybrid material on the anode 10 and anneal it at 230 °C for 30 min to obtain a hole injection layer 50 with a thickness of 120 nm;

[0178] Deposit an NHT-51 material on the hole injection layer 50 and anneal it at 230 °C for 30 min to obtain a hole transport layer 40 with a thickness of 100 nm;

[0179] Deposit an ink on the hole transport layer 40 to obtain a light-emitting layer 20 with a thickness of 55 nm. The ink includes a light-emitting material composition and a solvent. The light-emitting material composition includes a first host material H01, a second host material, and a red phosphorescent guest material Ir(btp)2(acac). The second host material includes EDM1 and EAM1. The solvent is methyl benzoate. In the light-emitting material composition, the content of the first host material is 15 wt%, the content of the second host material is 70 wt%, and the content of the guest material is 10 wt%. Among them, the mass ratio of EDM1 to EAM1 in the second host material is 5:5;

[0180] Transfer the substrate to a vacuum chamber with a vacuum degree of 9*10 -7 torr, and deposit ETM036:LiQ on the light-emitting layer 20 to obtain an electron transport layer 60 with a thickness of 22 nm;

[0181] Evaporate Yb on the electron transport layer 60 to obtain an electron injection layer 70 with a thickness of 1 nm;

[0182] Evaporate Ag on the electron injection layer 70 to obtain a cathode 30 with a thickness of 18 nm;

[0183] The CPL008 (manufactured by Huari Optoelectronics) is evaporated on the cathode 30 to form a light extraction layer with a thickness of 80 nm, and the light-emitting device 100 is obtained.

[0184] Example 2

[0185] This example is basically the same as Example 1, except that in this example, the mass ratio of EDM1 to EAM1 is 1:9.

[0186] Example 3

[0187] This example is basically the same as Example 1, except that in this example, the mass ratio of EDM1 to EAM1 is 9:1.

[0188] Example 4

[0189] This example is basically the same as Example 1, except that in this example, in the light-emitting material composition, the content of the first host material is 30 wt%, the content of the second host material is 55 wt%, and the content of the guest material is 15 wt%.

[0190] Example 5

[0191] This example is basically the same as Example 1, except that in this example, in the light-emitting material composition, the content of the first host material is 1 wt%, the content of the second host material is 84 wt%, and the content of the guest material is 15 wt%.

[0192] Example 6

[0193] This example is basically the same as Example 1, except that in this example, EDM4 is used to replace EDM1 in Example 1, EAM2 is used to replace EAM1 in Example 1, and the mass ratio of EDM4 to EAM2 is 1:1.

[0194] Example 7

[0195] This example is basically the same as Example 1, except that in this example, EDM12 is used to replace EDM1 in Example 1, EAM3 is used to replace EAM1 in Example 1, and the mass ratio of EDM12 to EAM3 is 1:1.

[0196] Example 8

[0197] This example is basically the same as Example 1, except that in this example, EDM19 is used to replace EDM1 in Example 1, EAM4 is used to replace EAM1 in Example 1, and the mass ratio of EDM19 to EAM4 is 1:1.

[0198] Example 9

[0199] This embodiment is basically the same as Embodiment 1, except that in this embodiment, EDM21 is used to replace EDM1 in Embodiment 1, EAM5 is used to replace EAM1 in Embodiment 1, and the mass ratio of EDM21 to EAM5 is 1:1.

[0200] Embodiment 10

[0201] This embodiment is basically the same as Embodiment 1, except that in this embodiment, EDM25 is used to replace EDM1 in Embodiment 1, EAM14 is used to replace EAM1 in Embodiment 1, and the mass ratio of EDM25 to EAM14 is 1:1.

[0202] Embodiment 11

[0203] This embodiment is basically the same as Embodiment 1, except that in this embodiment, H02 is used to replace H01 in Embodiment 1.

[0204] Embodiment 12

[0205] This embodiment is basically the same as Embodiment 1, except that in this embodiment, H07 is used to replace H01 in Embodiment 1.

[0206] Embodiment 13

[0207] This embodiment is basically the same as Embodiment 1, except that in this embodiment, H22 is used to replace H01 in Embodiment 1.

[0208] Embodiment 14

[0209] This embodiment is basically the same as Embodiment 1, except that in this embodiment, H24 is used to replace H01 in Embodiment 1.

[0210] Embodiment 15

[0211] This embodiment is basically the same as Embodiment 1, except that in this embodiment, H26 is used to replace H01 in Embodiment 1.

[0212] Embodiment 16

[0213] This embodiment is basically the same as Embodiment 1, except that in this embodiment, H63 is used to replace H01 in Embodiment 1.

[0214] Embodiment 17

[0215] This embodiment is basically the same as Embodiment 1, except that in this embodiment, H68 is used to replace H01 in Embodiment 1.

[0216] Comparative Example 1

[0217] Comparative Example 1 is basically the same as Example 1, except that the ink in this comparative example includes a luminescent material composition and a solvent. The luminescent material composition includes a first host material H01 and a red phosphorescent guest material Ir(btp)2(acac). The solvent is methyl benzoate. In the luminescent material composition, the content of the first host material is 60 wt%, and the content of the red phosphorescent guest material is 40 wt%.

[0218] That is, the ink in this comparative example includes a red host material H01 and does not include a second host material.

[0219] Comparative Example 2

[0220] This comparative example is basically the same as Comparative Example 1, except that this comparative example uses H02 to replace H01 in Comparative Example 1.

[0221] Comparative Example 3

[0222] This comparative example is basically the same as Comparative Example 1, except that this comparative example uses H07 to replace H01 in Comparative Example 1.

[0223] Comparative Example 4

[0224] This comparative example is basically the same as Comparative Example 1, except that this comparative example uses H22 to replace H01 in Comparative Example 1.

[0225] Comparative Example 5

[0226] This comparative example is basically the same as Comparative Example 1, except that this comparative example uses H24 to replace H01 in Comparative Example 1.

[0227] Comparative Example 6

[0228] This comparative example is basically the same as Comparative Example 1, except that this comparative example uses H26 to replace H01 in Comparative Example 1.

[0229] Comparative Example 7

[0230] This comparative example is basically the same as Example 1, except that the ink in this comparative example includes the second host material in Example 1, the red phosphorescent guest material Ir(btp)2(acac) in Example 1, and the solvent methyl benzoate in Example 1, and does not include the first host material H01 in Example 1.

[0231] Comparative Example 8

[0232] This comparative example is basically the same as Comparative Example 1, except that this comparative example uses H63 to replace H01 in Comparative Example 1.

[0233] Comparative Example 9

[0234] This comparative example is basically the same as Comparative Example 1, except that in this comparative example, H68 is used to replace H01 in Comparative Example 1.

[0235] In the above embodiments, the LUMO energy levels and HOMO energy levels of the first host material, the electron donor material, and the electron acceptor material are shown in Table 1 below.

[0236] In this application, the determination method of the HOMO energy level and the LUMO energy level is as follows: Using TD-DFT (time-dependent density functional theory) through Gaussian 09W (Gaussian Inc.), first use the semi-empirical method "Ground State / Semi-empirical / Default Spin / AM1" (Charge 0 / Spin Singlet) to optimize the molecular geometry structure, and then the energy structure of the organic molecule is calculated by the TD-DFT (time-dependent density functional theory) method "TD-SCF / DFT / Default Spin / B3PW91" and the basis set "6-31G(d)" (Charge 0 / Spin Singlet). The HOMO and LUMO energy levels are calculated according to the following calibration formula:

[0237] HOMO (eV) = ((HOMO(G) × 27.212) - 0.9899) / 1.1206;

[0238] LUMO (eV) = ((LUMO(G) × 27.212) - 2.0041) / 1.385.

[0239] Among them, HOMO and LUMO are the direct calculation results of Gaussian 09W, and the unit is Hartree.

[0240] Table 1:

[0241] Material LUMO energy level (eV) HOMO energy level (eV) H01 -2.75 -5.39 H02 -2.80 -5.34 H07 -2.84 -5.34 H22 -2.78 -5.37 H24 -2.81 -5.35 H26 -2.80 -5.36 H63 -2.80 -5.87 H68 -2.72 -5.40 EDM1 -2.21 -5.33 EDM4 -2.20 -5.35 EDM12 -2.23 -5.34 EDM19 -2.12 -5.40 EDM21 -2.21 -5.37 EDM25 -2.16 -5.37 EAM1 -2.86 -6.14 EAM2 -2.87 -6.08 EAM3 -2.81 -6.10 EAM4 -2.85 -6.10 EAM5 -2.84 -6.07 EAM14 -2.85 -6.02

[0242] The color coordinates, current efficiency CE@1000nit, voltage at a current density of 10 mA / cm 2 (Voltage@J10), and lifetime T95@1000nit of the light-emitting devices of Examples 1 to 17 and Comparative Examples 1 to 9 were tested, and the test results are shown in Table 2.

[0243] Among them, the current efficiency CE@1000nit uses a FushiDA FPD optical property measurement device, and through an efficiency test system built by controlling a QE PRO spectrometer, a Keithley 2400, and a Keithley 6485 by LabView, parameters such as voltage, current, brightness, and emission spectrum are measured, and the current efficiency is obtained through calculation.

[0244] The test method for the lifetime T95 is as follows: When the device is driven at a constant current density, the time required for the device brightness to decrease to a certain proportion of the maximum brightness. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the test cycle, the device lifetime test is usually carried out by accelerating device aging at high brightness, and the lifetime at high brightness is obtained by fitting with an extended exponential decay brightness decay fitting formula. For example, the lifetime at 1000 nit is denoted as T95@1000 nit. The specific calculation formula is as follows:

[0245]

[0246] where T95 L is the converted lifetime at 1000 nit, T95 H is the measured lifetime at a certain constant current density, L H is the actual brightness of the device at a certain constant current density, L L is 1000 nit, A is the acceleration factor. In this experiment, the lifetimes of several groups of red OLED devices are measured. Among them, the constant current density is 25 mA / cm 2 , and the value of A is 1.7.

[0247] Table 2:

[0248]

[0249]

[0250] As can be seen from Table 2:

[0251] Compared with the light-emitting devices of Comparative Examples 1 to 6, 8 to 9, the light-emitting devices of Examples 1 to 17 have similar color coordinates, higher CE@1000 nit, and longer lifetimes; compared with the light-emitting device of Comparative Example 7, the light-emitting devices of Examples 1 to 17 have similar color coordinates, higher CE@1000 nit, and longer lifetimes. It can be seen that the light-emitting device using the light-emitting material composition of the present application as the light-emitting layer material can have a longer lifetime on the basis of ensuring that the light-emitting device has good current efficiency and voltage@J10. The reason may be that the light-emitting material composition includes a first host material and a second host material. When the light-emitting material composition is used in the light-emitting layer, the first host material serves as the main energy transfer path during the light-emitting process, and the second host material is equivalent to adding an additional energy transfer path. Thus, the energy transfer paths during the light-emitting process include at least the following three: the first path is that energy is directly transferred from the first host material to the guest material, the second path is that energy is transferred from the second host material to the first host material and then to the guest material, and the third path is that energy is directly transferred from the second host material to the guest material. Such energy transfer does not cause large-area energy accumulation. The second host material is equivalent to acting as a diluent to dilute the triplet energy with too high a concentration and at the same time avoid the inevitable energy loss in the single exciplex transfer process.

[0252] The technical solutions provided by the embodiments of the present application have been introduced in detail above. Specific examples are used in this article to elaborate on the principles and implementation manners of the present application. The descriptions of the above embodiments are only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A luminescent material composition, characterized in that, It includes a first host material and a second host material, wherein the second host material is configured to form an exciplex under the action of external energy.

2. The luminescent material composition according to claim 1, wherein the luminescent material composition further includes a guest material; and / or the second host material includes an electron donor material and an electron acceptor material; and / or the external energy includes one or more of photoexcitation and thermal activation; and / or the triplet energy of the first host material is 2.0 - 3.0 eV; and / or the triplet energy of the exciplex is 2.3 - 3.0 eV; and / or the triplet energy of the exciplex is higher than the triplet energy of the first host material; and / or the first host material includes one or more of a P-type host material, an N-type host material, and a bipolar host material.

3. The luminescent material composition according to claim 2, wherein the emission peak wavelength of the guest material is 580 - 650 nm; and / or in the luminescent material composition, the content of the first host material is 1 - 30 wt%, the content of the second host material is 55 - 84 wt%, and the content of the guest material is 1 - 15 wt%; and / or in the second host material, the content of the electron donor material is 10 - 90 wt%, and the content of the electron acceptor material is 10 - 90 wt%; and / or the absolute value of the difference between the LUMO energy level of the electron donor material and the LUMO energy level of the electron acceptor material is greater than or equal to 0.25 eV, and the absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the electron acceptor material is greater than or equal to 0.25 eV; and / or the absolute value of the difference between the HOMO energy level of the electron donor material and the HOMO energy level of the first host material is less than or equal to 0.3 eV, and the absolute value of the difference between the LUMO energy level of the electron acceptor material and the LUMO energy level of the first host material is less than or equal to 0.3 eV; and / or the triplet energy of the exciplex and the triplet energy of the first host material are both greater than the triplet energy of the guest material.

4. The luminescent material composition according to claim 2, wherein The electron donor material has the structure shown in formula (I): Wherein, m1 is selected from any integer from 1 to 6; Ar1 is selected from a substituted or unsubstituted aromatic group with 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group with 3 to 60 carbon atoms; K is a hole transport unit, and K is selected from one or more of the following structures: wherein, Ar 11 is selected from a substituted or unsubstituted aromatic group having 6 to 40 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 40 carbon atoms; Y1 and Y2 are each independently selected from a single bond, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4) or P(R3); wherein, R1, R2, R3, and R4 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

5. The luminescent material composition according to claim 4, characterized in that The Ar1 and the K are each independently selected from one or more of the following structures: Wherein, Y1 and Y2 are selected from a single bond, N(R3), C(R3R4), Si(R3R4), O, S, C=N(R3), C=C(R3R4) or P(R3); Wherein, R1, R3, and R4 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

6. The luminescent material composition according to claim 2, characterized in that, The electron donor material includes one or more of the compounds represented by the following structural formula:

7. The luminescent material composition according to claim 2, wherein The electron acceptor material has the structure shown in the following formula (II): Wherein, m2 is an integer selected from 1 to 6; Ar2 is selected from a substituted or unsubstituted aromatic group having 6 to 60 carbon atoms, or a substituted or unsubstituted heteroaromatic group having 3 to 60 carbon atoms; A is an electron transport unit, and the A is selected from F, a cyano group or one or more of the following groups: Wherein, a is 1, 2 or 3; X 1 to X 8 each independently selected from CR7 or N, and at least one is N; M 1 、M 2 、M 3 independently represent N(R7), C(R7R8), Si(R7R8), O, C=N(R7), C=C(R7R8), P(R7), P(=O)R7, S, S=O, SO2 or none; R5, R6, R7, and R8 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms.

8. The luminescent material composition according to claim 2, characterized in that, The electron acceptor material includes one or more of the compounds represented by the following structural formula:

9. The luminescent material composition according to claim 2, wherein The first host material includes one or more of the following groups: Wherein: v and n are each independently an integer from 1 to 10 each time they appear; X1 is each independently selected from C and N each time it appears, and at least one of the rings having X1 is N; Y is selected from a single bond, N(R9), C(R9R 10 ), Si(R9R 10 ), O, S, C═N(R9), C═C(R9R 10 ), or P(R9), where R9 and R 10 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 60 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 60 ring atoms; Ar 1 、Ar 2 、Ar 3 Each independently selected from a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 30 ring atoms, or a substituted or unsubstituted non-aromatic ring group having 5 to 30 ring atoms; R is selected from hydrogen, deuterium, a halogen atom, a cyano group, an alkyl group, an alkoxy group, an amino group, an alkenyl group, an alkynyl group, an aralkyl group, a heteroalkyl group, an aryl group or a heteroaryl group.

10. The luminescent material composition according to claim 9, characterized in that, The bipolar host material contains one or more of the groups represented by the following formula (III-1), formula (III-2) and formula (III-3): Wherein, X is selected from C and N, and at least one X is N; When R 11 and R 12 each occur, they are selected from substituted or unsubstituted aromatic or heteroaromatic groups having 5 to 40 ring atoms, or aryloxy or heteroaryloxy groups having 5 to 40 ring atoms, or combinations of these systems, and adjacent R1 and R2 may be joined to form a ring; When R 13 、R 14 、R 15 、R 16 、R 17 、R 18 、R 1 、R 2 、R 3 、R 4 、R 5 、R 6 、R 7 、R 8 、R 9 appears each time, it is independently selected from H, or D, or a straight-chain alkyl, alkoxy or thioalkoxy group having 1 to 20 C atoms, or a branched or cyclic alkyl, alkoxy or thioalkoxy group having 3 to 20 C atoms, or a silyl group, or a keto group having 1 to 20 C atoms, or an alkoxycarbonyl group having 2 to 20 C atoms, or an aryloxycarbonyl group having 7 to 20 C atoms, CF3, Cl, Br, F, or a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 40 ring atoms, or an aryloxy or heteroaryloxy group having 5 to 40 ring atoms, or a combination of these systems. Adjacent R 13 、R 14 、R 15 、R 16 、R 17 、R 18 can be connected to each other to form a ring. Adjacent R 1 、R 2 、R 3 、R 4 、R 5 、R 6 、R 7 、R 8 、R 9 can be connected to each other to form a ring; Among them, R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 at least one of them has the following structural formula (III-4); Wherein, Ar3 and Ar4 are each independently selected from a substituted or unsubstituted aromatic group or heteroaromatic group having 5 to 30 ring atoms, or a substituted or unsubstituted non-aromatic cyclic group having 5 to 30 ring atoms; L1 is selected from a single bond, a substituted or unsubstituted aryl or heteroaryl group having 5 to 30 ring atoms, or a substituted or unsubstituted non-aromatic cyclic group having 5 to 30 ring atoms; Any two adjacent groups among Ar3, Ar4, and L1 can be connected to each other to form a ring.

11. The luminescent material composition according to claim 10, wherein It includes at least one of the following features (1) to (3): (1) The bipolar host material includes one or more of the compounds represented by the following structural formulas: (2) The N-type host material includes one or more of the compounds represented by the following structural formulas: (3) The P-type host material includes one or more of the compounds represented by the following structural formulas:

12. The luminescent material composition according to claim 2, wherein The guest material includes one or more of a phosphorescent guest material, a fluorescent guest material, and a thermally activated delayed fluorescence emitting material.

13. An ink, characterized in that, It includes a solvent and the luminescent material composition according to any one of claims 1 to 12.

14. The ink according to claim 13, wherein in the ink, the mass percentage content of the luminescent material composition is 1 to 30%; and / or the solvent includes one or more of aromatic hydrocarbon compounds, aromatic ester compounds, alkane compounds, aromatic hydrocarbon compounds, ether compounds, ketone compounds, and amine compounds.

15. A light-emitting device includes an anode, a light-emitting layer, and a cathode stacked in sequence, characterized in that, The material of the light-emitting layer includes the luminescent material composition according to any one of claims 1 to 12.

16. The light-emitting device according to claim 15, wherein the anode and the cathode each independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode, or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, zinc-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / APC / AZO, ITO / Ag / ITO, ITO / APC / ITO, IZO / Ag / IZO, IZO / APC / IZO, ZnO / Ag / ZnO, ZnO / APC / ZnO, TiO2 / Ag / TiO2, TiO2 / APC / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, or BaF2 / Ca / Al. The material of the metal elemental electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrode includes an Au:Mg alloy electrode or an Ag:Mg alloy electrode; and / or The light-emitting device further includes a hole transport layer, which is located between the anode and the light-emitting layer. The material of the hole transport layer includes one or more of HTM014, HTM081, HTM163, HTM222, NHT-5, NHT-18, NHT-49, NHT-51, EL-301, EL-22T, 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiro-NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The light-emitting device further includes a hole injection layer located between the anode and the light-emitting layer. The material of the hole injection layer includes one or more of NDP-2, NDP-9, F4-TCNQ, F6-TCNNQ, tetrafluorotetracyanoquinodimethane, 7,7,8,8-tetracyanoquinodimethane, 4,4',4”-tris(2-naphthylphenylamino)triphenylamine, perylene-3,4,9,10-tetracarboxylic dianhydride, pentacene, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, derivatives of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, copper hexadecafluorophthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide; and / or The light-emitting device further includes an electron transport layer, which is located between the light-emitting layer and the cathode. The material of the electron transport layer is selected from one or more of inorganic electron transport materials and organic electron transport materials. The inorganic electron transport materials include one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3. The doping elements in the doped metal oxide particles include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS. The organic electron transport materials include one or more of NET-164, NDN-87, NDN-45, NDN-18, NDN-218, ET093, ETM020, ETM033, ETM034, ETM036, 4,6-bis(3,5-bis(pyridin-3-yl)phenyl)-2-methylpyrimidine, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, 1,3,5-tris(1-phenyl-1H-benzoimidazol-2-yl)benzene, tris(8-hydroxyquinoline)aluminum, lithium 8-hydroxyquinolate, bis(2-methyl-8-hydroxyquinolinato-N1,O8)-(1,1'-biphenyl-4-olato)aluminum, ionic conjugated polyelectrolytes; and / or The light-emitting device further includes an electron injection layer, which is located between the electron transport layer and the cathode. The material of the electron injection layer includes one or more of Yb, yttrium fluoride, Li, LiF, NaF, CsCO3, Cs, KBH4, and KH.

17. A display panel, characterized in that, The display panel includes a red pixel unit, and the material of the red pixel unit includes the light-emitting material composition according to any one of claims 1 to 12.

18. A display device, characterized in that, The display device includes the light-emitting device according to any one of claims 15 to 16, or the display device includes the display panel according to claim 17.

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