Shadow eliminating touch structure and touch screen

Abstract

The invention relates to a shadow elimination touch structure and a touch screen, which can ensure the low reflectivity of the touch screen and improve the use experience of a user while eliminating the visibility of a touch pattern and an electrode bridge point. The shadow elimination touch control structure comprises a substrate; the transparent conductive structure comprises a touch pattern layer and an electrode bridge point layer which are overlapped above the substrate and are electrically connected with each other; the disapparation film system structure comprises a first disapparation film system located between the substrate and the transparent conductive structure, a second disapparation film system located between the touch control pattern layer and the electrode bridge point layer, and a third disapparation film system located above the transparent conductive structure; the refractive indexes of the first vanishing film system, the second vanishing film system and the third vanishing film system are not higher than the refractive index of the transparent conductive structure and are not lower than the refractive index of the substrate; refractive indexes of areas which respectively take the touch pattern layer and the electrode bridge point layer as centers in the shadow eliminating touch structure are in gradient change of increasing and then decreasing.

Description

Technical Field

[0001] The present application relates to the field of touch control technology, and particularly to an anti-reflection touch control structure and a touch screen. Background Art

[0002] As an interactive input device with both display and instruction input functions, a touch screen allows users to directly touch the screen with their hands, and corresponding responses are made according to the touched areas. That is, the touch screen technology has the characteristics of simple operation and flexible use, and has become a very attractive new multimedia interaction device.

[0003] However, since the touch screen has conductive areas and non-conductive areas, and there are differences in reflectivity between the two, the appearance of the touch pattern in the touch screen is easily visible to users, which is not conducive to improving the display quality. Especially in the overall trend of the gradually decreasing reflectivity of the touch screen, the visibility of the touch pattern becomes more obvious, seriously affecting the user experience.

[0004] In order to eliminate the visibility of the touch pattern, the currently commonly used technical means is to stack film layers, that is, an anti-reflection (abbreviated as IM) layer is set on the touch pattern. Although this technical means can eliminate the visibility of the touch pattern, due to electrode etching in both directions of the touch screen, the bridge points at the electrode intersections are still visible, which still affects the user experience. Summary of the Invention

[0005] Aiming at the problem that the existing technical means of film layer stacking can only eliminate the visibility of the touch pattern, but cannot eliminate the visibility of the electrode bridge points, which still affects the user experience; the present application provides an anti-reflection touch control structure and a touch screen, which can eliminate the visibility of the touch pattern and the electrode bridge points while ensuring the low reflectivity of the touch screen, and improve the user experience.

[0006] According to one aspect of the present application, the present application provides an anti-reflection touch control structure, including:

[0007] A substrate;

[0008] A transparent conductive structure, including a touch pattern layer and an electrode bridge point layer that are stacked above the substrate and electrically connected to each other; and

[0009] The anti-reflection film system structure includes a first anti-reflection film system between the substrate and the transparent conductive structure, a second anti-reflection film system between the touch pattern layer and the electrode bridge point layer, and a third anti-reflection film system above the transparent conductive structure; the refractive indices of the first anti-reflection film system, the second anti-reflection film system, and the third anti-reflection film system are all not higher than the refractive index of the transparent conductive structure and not lower than the refractive index of the substrate; in the anti-reflection touch structure, the refractive index in the regions centered on the touch pattern layer and the electrode bridge point layer respectively changes in a gradient manner of first increasing and then decreasing.

[0010] According to an embodiment of the present application, the first anti-reflection film system includes M1 first sub-anti-reflection film layers stacked between the substrate and the transparent conductive structure, where M1 is a positive integer greater than or equal to 1 and less than or equal to 5.

[0011] According to an embodiment of the present application, when M1>1, the refractive indices of the multiple first sub-anti-reflection film layers change in a monotonically increasing gradient along the direction away from the substrate.

[0012] According to an embodiment of the present application, when M1>2, the thicknesses of the multiple first sub-anti-reflection film layers first increase and then decrease along the direction away from the substrate.

[0013] According to an embodiment of the present application, the second anti-reflection film system includes M2 second sub-anti-reflection film layers stacked between the touch pattern layer and the electrode bridge point layer, where M2 is a positive integer greater than or equal to 1 and less than or equal to 5.

[0014] According to an embodiment of the present application, when M2>2, the refractive indices of the multiple second sub-anti-reflection film layers change in a gradient manner of first decreasing and then increasing along the direction away from the substrate.

[0015] According to an embodiment of the present application, when M2>2, the thicknesses of the multiple second sub-anti-reflection film layers first increase and then decrease along the direction away from the substrate.

[0016] According to an embodiment of the present application, when M2 = 1, the refractive index of the second sub-anti-reflection film layer is equal to the geometric mean of the refractive indices of the touch pattern layer and the electrode bridge point layer.

[0017] According to an embodiment of the present application, the third anti-reflection film system includes M3 third sub-anti-reflection film layers stacked above the transparent conductive structure, where M3 is a positive integer greater than or equal to 1 and less than or equal to 5.

[0018] According to an embodiment of the present application, when M3>1, the refractive indices of the multiple third sub-anti-reflection film layers change in a monotonically decreasing gradient along the direction away from the substrate.

[0019] According to an embodiment of the present application, when M3 > 2, the thicknesses of multiple third sub-anti-reflection film layers show a trend of first increasing and then decreasing along the direction away from the substrate.

[0020] According to an embodiment of the present application, along the direction away from the substrate: the materials of the three first sub-anti-reflection film layers in the first anti-reflection film system are SiO7N3, SiO5N5, and SiO3N7 in sequence; the materials of the three second sub-anti-reflection film layers in the second anti-reflection film system are SiO2N8, SiO5N5, and SiO2N8 in sequence; the materials of the three third sub-anti-reflection film layers in the third anti-reflection film system are SiO4N6, SiO5N5, and SiO7N3 in sequence.

[0021] According to an embodiment of the present application, along the direction away from the substrate: the materials of the three first sub-anti-reflection film layers in the first anti-reflection film system are SiO8N2, SiO7N3, and SiO5N5 in sequence; the material of the second sub-anti-reflection film layer in the second anti-reflection film system is SiO2N8; the materials of the three third sub-anti-reflection film layers in the third anti-reflection film system are SiO3N7, SiO4N6, and SiO7N3 in sequence.

[0022] According to an embodiment of the present application, the anti-reflection touch structure further includes a cover plate and an adhesive layer disposed between the cover plate and the third anti-reflection film system; when the refractive index of the adhesive layer is the same as that of the substrate, the refractive indices of all sub-anti-reflection film layers in the first anti-reflection film system and those in the third anti-reflection film system are mirror-symmetric.

[0023] According to an embodiment of the present application, when the refractive index of the touch pattern layer is the same as that of the electrode bridge point layer, the refractive indices of all sub-anti-reflection film layers in the first anti-reflection film system, the second anti-reflection film system, and the third anti-reflection film system are symmetrically distributed, and the middle second sub-anti-reflection film layer in the second anti-reflection film system is the center of symmetry.

[0024] According to another aspect of the present application, the present application further provides a touch screen, including:

[0025] A display panel; and

[0026] The anti-reflection touch structure described in any one of the above, wherein the anti-reflection touch structure is stacked above the display panel.

[0027] In summary, the shadow elimination touch control structure of the present application simultaneously sets shadow elimination film systems on the upper and lower sides of the touch control pattern layer and the electrode bridge point layer, ensuring that the refractive index in the regions centered on the touch control pattern layer and the electrode bridge point layer in the shadow elimination touch control structure changes in a gradient manner of first increasing and then decreasing; that is, in the direction away from the substrate, the refractive indices centered on the touch control pattern layer and the electrode bridge point layer both show a gradient change of first increasing and then decreasing, making the refractive index gradients of the three regions of the bridge point region, the pattern region, and the etching seam region on the touch screen change smoothly, which is beneficial to reducing the refractive index difference between both sides of each interface in the shadow elimination touch control structure, ensuring that the reflectivities of the above three regions are as consistent as possible, not only enabling the touch control pattern and the electrode bridge point to be invisible, but also obtaining an ultra-low reflectivity, so as to obtain a better hue and improve the user experience. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1A FIG. is a schematic structural diagram of a touch screen according to an embodiment of the present invention;

[0029] Figure 1B FIG. is a schematic structural diagram of a touch screen according to a modified embodiment of the present invention;

[0030] Figure 2 FIG. shows a first example of the shadow elimination touch control structure in the touch screen according to the above embodiment of the present invention;

[0031] Figure 3A FIG. shows a schematic diagram of the reflectance spectrum of the shadow elimination touch control structure according to the above first example of the present invention;

[0032] Figure 3B FIG. shows a schematic diagram of the reflection hue coordinate of the shadow elimination touch control structure according to the above first example of the present invention;

[0033] Figure 4A FIG. shows a schematic diagram of the reflection hue distribution of the shadow elimination touch control structure according to the above first example of the present invention;

[0034] Figure 4B FIG. shows a schematic diagram of the reflectance distribution of the shadow elimination touch control structure according to the above first example of the present invention;

[0035] Figure 5 FIG. shows a second example of the shadow elimination touch control structure in the touch screen according to the above embodiment of the present invention;

[0036] Figure 6A FIG. shows a schematic diagram of the reflectance spectrum of the shadow elimination touch control structure according to the above second example of the present invention;

[0037] Figure 6BShows a schematic diagram of the reflection hue coordinates of the anti-glare touch structure according to the above second example of the present invention;

[0038] Figure 7A Shows a schematic diagram of the reflection hue distribution of the anti-glare touch structure according to the above second example of the present invention;

[0039] Figure 7B Shows a schematic diagram of the reflectance distribution of the anti-glare touch structure according to the above second example of the present invention;

[0040] Figure 8 Shows a third example of the anti-glare touch structure in the touch screen according to the above embodiment of the present invention;

[0041] Figure 9 Shows a fourth example of the anti-glare touch structure in the touch screen according to the above embodiment of the present invention.

[0042] Description of main component symbols:

[0043] 1. Anti-glare touch structure; 10. Substrate; 20. Transparent conductive structure; 21. Touch pattern layer; 22. Electrode bridge point layer; 30. Anti-glare film system structure; 31. First anti-glare film system; 310. First sub-anti-glare film layer; 32. Second anti-glare film system; 320. Second sub-anti-glare film layer; 33. Third anti-glare film system; 330. Third sub-anti-glare film layer; 40. Cover plate; 50. Adhesive layer; 2. Display panel.

[0044] The above description of main component symbols further elaborates on the present invention in conjunction with the accompanying drawings and specific embodiments. Detailed Description of the Invention

[0045] In order to make the above objects, features, and advantages of the present invention more apparent and understandable, the following detailed description of the specific embodiments of the present invention is provided in conjunction with the accompanying drawings. Many specific details are set forth in the following description in order to fully understand the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the spirit of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0046] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present invention.

[0047] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0048] In the present invention, unless otherwise clearly specified and defined, the terms "mounted", "connected", "coupled", "fixed", etc. should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0049] In the present invention, unless otherwise clearly specified and defined, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "underneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0050] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or there can also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are only for illustrative purposes and do not represent the only implementation.

[0051] Considering that although the existing film stack technology can eliminate the visibility of the touch pattern, due to the electrode etching in both directions of the touch screen, the bridge points at the electrode intersections are still visible, which will still affect the user experience. To solve this problem, the present application provides an anti-reflection touch structure and a touch screen, which can eliminate the visibility of the touch pattern and the electrode bridge points while ensuring the low reflectivity of the touch screen and improving the user experience.

[0052] Specifically, according to one aspect of the present application, as Figure 1A and Figure 1B shown, an embodiment of the present application provides a touch screen, which may include a display panel 2 and an anti-reflection touch structure 1 stacked above the display panel 2, so that the user can correspondingly contact the anti-reflection touch structure 1 based on the image displayed on the display panel 2 to achieve human-computer interaction.

[0053] More specifically, as Figure 1A and Figure 1B shown, the anti-reflection touch structure 1 may include a substrate 10, a transparent conductive structure 20, and an anti-reflection film system structure 30. The transparent conductive structure 20 includes a touch pattern layer 21 and an electrode bridge point layer 22 stacked above the substrate 10 and electrically connected to each other. The anti-reflection film system structure 30 includes a first anti-reflection film system 31 located between the substrate 10 and the transparent conductive structure 20, a second anti-reflection film system 32 located between the touch pattern layer 21 and the electrode bridge point layer 22, and a third anti-reflection film system 33 located above the transparent conductive structure 20. The refractive indices of the first anti-reflection film system 31, the second anti-reflection film system 32, and the third anti-reflection film system 33 are not higher than the refractive index of the transparent conductive structure 20 and not lower than the refractive index of the substrate 10. In the anti-reflection touch structure 1, the refractive index of the region centered on the touch pattern layer 21 and the electrode bridge point layer 22 changes in a gradient manner of first increasing and then decreasing. It can be understood that Figure 1A and Figure 1B are only schematic diagrams of the distribution order of the functional layers in the touch screen. In actual products, the second anti-reflection film system 32 and the third anti-reflection film system 33 are not like Figure 1A and Figure 1BRather than being a flat film layer as shown, it changes conformally with the structure to be coated, which is not elaborated in this application.

[0054] It should be noted that there are usually three regions in this touch screen, namely the bridging point region S1, the pattern region S2, and the etching slit region S3. In the bridging point region S1, there are both electrode bridge points and touch patterns, that is, there are two conductive layers; in the pattern region S2, there are only touch patterns and no electrode bridge points, that is, there is one conductive layer; in the etching slit region S3, there are neither electrode bridge points nor touch patterns, that is, there is no conductive layer. If no anti-reflection treatment is performed, due to the inconsistent reflectivities of the three regions of the bridging point region S1, the pattern region S2, and the etching slit region S3 on this touch screen, users will see the etching pattern, which is not conducive to improving the display quality.

[0055] However, the anti-reflection touch structure 1 of this application simultaneously sets anti-reflection film systems on both the upper and lower sides of the touch pattern layer 21 and the electrode bridge point layer 22, ensuring that the refractive index of the region centered on the touch pattern layer 21 and the electrode bridge point layer 22 in the anti-reflection touch structure 1 changes in a gradient manner of first increasing and then decreasing; that is to say, in the direction away from the substrate 10, the refractive index centered on the touch pattern layer 21 and the electrode bridge point layer 22 both shows a gradient change of first increasing and then decreasing, making the refractive index gradients of the three regions of the bridging point region S1, the pattern region S2, and the etching slit region S3 on this touch screen all change smoothly, which is conducive to reducing the refractive index difference between both sides of each interface in the anti-reflection touch structure 1, ensuring that the reflectivities of the above three regions are as consistent as possible, not only enabling both the touch pattern and the electrode bridge point to be invisible, but also being able to obtain an ultra-low reflectivity in order to obtain a better hue and improve the user experience.

[0056] In addition, the upper and lower positions of the touch pattern layer 21 and the electrode bridge point layer 22 in the transparent conductive structure 20 can be interchanged, that is, in the direction away from the substrate 10: there can be the touch pattern layer 21 first and then the electrode bridge point layer 22 to form a "top bridging" structure; or there can be the electrode bridge point layer 22 first and then the touch pattern layer 21 to form a "bottom bridging" structure. For example, as Figure 1B shown, taking the "top bridging" structure as an example, the first anti-reflection film system 31 is located between the substrate 10 and the touch pattern layer 21, and the third anti-reflection film system 33 is located above the electrode bridge point layer 22; as Figure 1A shown, taking the "bottom bridging" structure as an example, the first anti-reflection film system 31 is located between the substrate 10 and the electrode bridge point layer 22, and the third anti-reflection film system 33 is located above the touch pattern layer 21.

[0057] It can be understood that the substrate 10 can be prepared from a transparent material such as glass or a transparent resin. The transparent conductive structure 20 can be prepared from a (doped) metal oxide such as ITO (Indium Tin Oxide) or ATO (Arsenic Tri Oxide); it can also be prepared from a metal material such as a metal wire, a nanowire, or a nanorod; it can also be prepared from a polymer material such as PEDOT (a polymer of 3,4-ethylenedioxythiophene monomer) or PEDOT:PSS (polystyrene sulfonic acid).

[0058] In addition, considering the conductivity and actual requirements, the thickness of the touch pattern layer 21 in the transparent conductive structure 20 is not less than 30 nm and not more than 200 nm. Preferably, the thickness of the touch pattern layer 21 is between 50 nm and 150 nm.

[0059] Similarly, considering the sheet resistance, conductivity, and actual requirements, the thickness of the electrode bridge layer 22 in the transparent conductive structure 20 is not less than 50 nm and not more than 200 nm. Preferably, the thickness of the electrode bridge layer 22 is between 75 nm and 150 nm.

[0060] Optionally, the material of the anti-reflection film system structure 30 is implemented as one or more combinations of silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy).

[0061] Optionally, as Figure 2 and Figure 5 shown, the first anti-reflection film system 31 includes M1 first sub-anti-reflection film layers 310 stacked between the substrate 10 and the transparent conductive structure 20, where M1 is a positive integer greater than or equal to 1 and less than or equal to 5, so as to avoid excessively increasing the number of the first sub-anti-reflection film layers 310 while ensuring a good anti-reflection effect, which is beneficial to ensuring the low manufacturing cost of the first anti-reflection film system 31.

[0062] Preferably, as Figure 2 and Figure 5As shown, when M1 > 1, the refractive indices of multiple first sub - anti - reflection film layers 310 change in a monotonically increasing gradient along the direction away from the substrate 10, such that the refractive index gradient change in the portion between the substrate 10 and the electrode bridge point layer 22 in the anti - reflection touch structure 1 is relatively small, ensuring an ultra - low reflectivity. It can be understood that when M1 > 1, the refractive index of the first sub - anti - reflection film layer 310 closest to the substrate 10 in the first anti - reflection film system 31 can be greater than or equal to the refractive index of the substrate 10, and the refractive index of the first sub - anti - reflection film layer 310 closest to the transparent conductive structure 20 in the first anti - reflection film system 31 can be less than or equal to the refractive index of the transparent conductive structure 20. In addition, when M1 = 1, the refractive index of the first sub - anti - reflection film layer 310 is greater than the refractive index of the substrate 10 and less than the refractive index of the transparent conductive structure 20.

[0063] More preferably, as Figure 2 and Figure 5 shown, when M1 > 2, the thicknesses of multiple first sub - anti - reflection film layers 310 change in a trend of first increasing and then decreasing along the direction away from the substrate 10, so as to correspondingly adjust the equivalent refractive index of the first anti - reflection film system 31 and further reduce the interface reflectivity. That is to say, the thickness of the first sub - anti - reflection film layer 310 in the middle of the first anti - reflection film system 31 is greater than the thicknesses of the first sub - anti - reflection film layers 310 on the upper and lower sides.

[0064] Optionally, as Figure 2 and Figure 5 shown, the second anti - reflection film system 32 includes M2 second sub - anti - reflection film layers 320 stacked between the touch pattern layer 21 and the electrode bridge point layer 22, where M2 is a positive integer greater than or equal to 1 and less than or equal to 5, so as to avoid excessive increase in the number of second sub - anti - reflection film layers 320 while ensuring a good anti - reflection effect, which is beneficial to ensuring the low manufacturing cost of the second anti - reflection film system 32.

[0065] Preferably, as Figure 2 shown, when M2 > 2, the refractive indices of multiple second sub - anti - reflection film layers 320 change in a gradient of first decreasing and then increasing along the direction away from the substrate 10, such that the refractive index gradient change in the portion between the electrode bridge point layer 22 and the touch pattern layer 21 in the anti - reflection touch structure 1 is relatively small, ensuring an ultra - low reflectivity. It can be understood that when M2 > 1, the refractive index of the second sub - anti - reflection film layer 320 closest to the touch pattern layer 21 in the second anti - reflection film system 32 can be less than or equal to the refractive index of the touch pattern layer 21, and the refractive index of the second sub - anti - reflection film layer 320 closest to the electrode bridge point layer 22 in the second anti - reflection film system 32 can be less than or equal to the refractive index of the electrode bridge point layer 22.

[0066] In addition, when M2 = 1, the refractive index of the second sub-anti-reflection film layer 320 is preferably equal to the geometric mean of the refractive index of the touch pattern layer 21 and the refractive index of the electrode bridge layer 22 in the transparent conductive structure 20, so as to minimize the change in the refractive index gradient at the position between the electrode bridge layer 22 and the touch pattern layer 21 in the anti-reflection touch structure 1 and obtain a lower reflectivity when using one second sub-anti-reflection film layer 320.

[0067] More preferably, as Figure 2 shown, when M2 > 2, the thickness of the multiple second sub-anti-reflection film layers 320 first increases and then decreases along the direction away from the substrate 10, so as to correspondingly adjust the equivalent refractive index of the second anti-reflection film system 32 and further reduce the interface reflectivity. That is to say, the thickness of the second sub-anti-reflection film layer 320 in the middle of the second anti-reflection film system 32 is greater than the thickness of the second sub-anti-reflection film layers 320 on the upper and lower sides.

[0068] Optionally, as Figure 2 and Figure 5 shown, the third anti-reflection film system 33 includes M3 third sub-anti-reflection film layers 330 stacked above the transparent conductive structure 20, where M3 is a positive integer greater than or equal to 1 and less than or equal to 5, so as to avoid excessive increase in the number of the third sub-anti-reflection film layers 330 while ensuring a good anti-reflection effect, which is beneficial to ensuring the low manufacturing cost of the third anti-reflection film system 33.

[0069] Preferably, as Figure 2 and Figure 5 shown, when M3 > 1, the refractive indices of the multiple third sub-anti-reflection film layers 330 change monotonically and decrease along the direction away from the substrate 10, so that the change in the refractive index gradient at the position above the touch pattern layer 21 in the anti-reflection touch structure 1 is small, ensuring an ultra-low reflectivity. It can be understood that when M3 > 1, the refractive index of the third sub-anti-reflection film layer 330 closest to the transparent conductive structure 20 in the third anti-reflection film system 33 can be less than or equal to the refractive index of the transparent conductive structure 20, and the refractive index of the third sub-anti-reflection film layer 330 farthest from the transparent conductive structure 20 in the third anti-reflection film system 33 can be greater than or equal to the refractive index of the substrate 10. In addition, when M3 = 1, the refractive index of the third sub-anti-reflection film layer 330 is greater than the refractive index of the substrate 10 and less than the refractive index of the transparent conductive structure 20.

[0070] More preferably, as Figure 2 and Figure 5As shown, when M3 > 2, the thickness of multiple third sub-anti-reflection film layers 330 first increases and then decreases along the direction away from the substrate 10, so as to correspondingly adjust the equivalent refractive index of the third anti-reflection film system 33 and further reduce the interface reflectivity. That is to say, the thickness of the third sub-anti-reflection film layer 330 in the middle of the third anti-reflection film system 33 is greater than the thickness of the third sub-anti-reflection film layers 330 on the upper and lower sides.

[0071] It should be noted that the film-forming method of each sub-anti-reflection film layer in the anti-reflection film system structure 30 can be but is not limited to physical vapor deposition (PVD), chemical vapor deposition (CVD), spraying, coating or other film-forming methods. Considering the existence of various refractive index combinations, the film-forming method of each sub-anti-reflection film layer in the anti-reflection film system structure 30 is preferably chemical vapor deposition (CVD). In this way, no matter how many sub-film layers with different refractive indices each anti-reflection film system includes, it is a single film-forming process for the CVD process, and macroscopically it appears as a single layer of film, which is beneficial for mass production. Thus, in the actual film coating process: as Figure 1B shown, for the "top bridge" structure, the first anti-reflection film system 31, the touch pattern layer 21, the second anti-reflection film system 32, the electrode bridge point layer 22 and the third anti-reflection film system 33 are sequentially prepared on the substrate 10; as Figure 1A shown, for the "bottom bridge" structure, the first anti-reflection film system 31, the electrode bridge point layer 22, the second anti-reflection film system 32, the touch pattern layer 21 and the third anti-reflection film system 33 are sequentially prepared on the substrate 10.

[0072] Optionally, as Figure 1A and Figure 1B shown, the anti-reflection touch structure 1 further includes a cover plate 40 stacked above the third anti-reflection film system 33 and an adhesive layer 50 disposed between the cover plate 40 and the third anti-reflection film system 33, so as to hold the transparent conductive structure 20 and the anti-reflection film system structure 30 between the substrate 10 and the cover plate 40, which is beneficial for protecting the transparent conductive structure 20 and the anti-reflection film system structure 30. It can be understood that the material of the cover plate 40 can be the same as that of the substrate 10. In addition, the cover plate 40 can be adhered to the third anti-reflection film system 33 through an adhesive layer 50 such as optical clear adhesive (OCA) or the like.

[0073] Exemplarily, as Figure 2As shown, in the first example of the present application, along the direction away from the substrate 10: in the bridging point region S1, there are successively the substrate 10, the first anti-reflection film system 31, the electrode bridging point layer 22, the second anti-reflection film system 32, the touch pattern layer 21, and the third anti-reflection film system 33; in the pattern region S2, there are successively the substrate 10, the first anti-reflection film system 31, the second anti-reflection film system 32, the touch pattern layer 21, and the third anti-reflection film system 33; in the etching slit region S3, there are successively the substrate 10, the first anti-reflection film system 31, the second anti-reflection film system 32, and the third anti-reflection film system 33. In particular, each anti-reflection film system in the anti-reflection film system structure 30 includes three sub-anti-reflection film layers to form a "3-3-3 film system".

[0074] Specifically, as Figure 2 shown, in the above first example of the present application, the first anti-reflection film system 31 includes three first sub-anti-reflection film layers 310, and the refractive indices of the three first sub-anti-reflection film layers 310 show a gradient change of monotonically increasing along the direction away from the substrate 10. The second anti-reflection film system 32 includes three second sub-anti-reflection film layers 320, and the refractive indices of the three second sub-anti-reflection film layers 320 show a gradient change of first decreasing and then increasing along the direction away from the substrate 10. The third anti-reflection film system 33 includes three third sub-anti-reflection film layers 330, and the refractive indices of the three third sub-anti-reflection film layers 330 show a gradient change of monotonically decreasing along the direction away from the substrate 10.

[0075] More specifically, as Figure 2 shown, along the direction away from the substrate 10: the materials of the three first sub-anti-reflection film layers 310 in the first anti-reflection film system 31 are successively implemented as SiO7N3, SiO5N5, SiO3N7; the materials of the three second sub-anti-reflection film layers 320 in the second anti-reflection film system 32 are successively implemented as SiO2N8, SiO5N5, SiO2N8; the materials of the three third sub-anti-reflection film layers 330 in the third anti-reflection film system 33 are successively implemented as SiO4N6, SiO5N5, SiO7N3.

[0076] Optionally, the thickness of each first sub-anti-reflection film layer 310 in the first anti-reflection film system 31 is not less than 30 nm and not more than 300 nm.

[0077] Optionally, the thickness of each second sub-anti-reflection film layer 320 in the second anti-reflection film system 32 is not less than 100 nm and not more than 600 nm.

[0078] Optionally, the thickness of each third sub-anti-reflection film layer 330 in the third anti-reflection film system 33 is not less than 30 nm and not more than 300 nm.

[0079] Furthermore, through simulation experiments on the "3-3-3 film system" in the anti-reflection touch structure 1 of the above first example, as shown in Figure 3AThe shown reflectance spectrum diagram and as Figure 3B the shown reflection hue coordinate diagram. In addition, from Figure 3A the shown reflectance spectrum diagram and as Figure 3B the shown reflection hue coordinate diagram, the reflectance and hue coordinate data of the bridging point region S1, the pattern region S2, and the etching slit region S3 are as shown in Table 1 below:

[0080] Table 1: Reflectance and hue coordinates of the anti-glare touch structure 1 in the three regions S1, S2, and S3 in the above first example

[0081] Region item Y a＊ b＊ Pattern region S2 0.11 -0.94 -1.26 Etching slit region S3 0.11 -0.18 -0.29 Bridge point region S1 0.09 -0.29 -0.67

[0082] In summary, from Figure 3A it can be seen that: under the combined action of the first anti-glare film system 31, the second anti-glare film system 32, and the third anti-glare film system 33, the reflectance spectral line values of the bridging point region S1, the pattern region S2, and the etching slit region S3 are relatively low and close to each other. At the same time, considering that the human eye's relative luminosity function reaches its peak near green light, it can be predicted that the reflected light intensities caused by the bridging point region S1, the pattern region S2, and the etching slit region S3 to the human eye are very close. At the same time, from Figure 3B it can be seen that: the reflected colors of the bridging point region S1, the pattern region S2, and the etching slit region S3 are also relatively close.

[0083] In other words, Y in the above Table 1 is the convolution result of the reflectance spectrum and the human eye's relative luminosity function, that is, it represents the magnitude of its reflectance intensity. It can be seen from this table that: under the combined action of the first anti-glare film system 31, the second anti-glare film system 32, and the third anti-glare film system 33, the reflectance intensities and reflected hues between the bridging point region S1, the pattern region S2, and the etching slit region S3 are very close. Therefore, the human eye is also insensitive to the differences in these three regions and can achieve the purpose of anti-glare. At the same time, since the reflectance contribution of the anti-glare touch structure 1 in the above first example is only about 0.1%, the anti-glare touch structure 1 is also friendly to the overall reflectance of the touch screen.

[0084] In addition, considering that there are process fluctuations in the actual processing process, the present application further conducts five hundred tolerance fluctuation experiments through a computer to obtain as Figure 4A the shown reflection hue distribution diagram and as Figure 4B the shown reflectance distribution diagram. Furthermore, from Figure 4A the shown reflection hue distribution diagram and as Figure 4B the shown reflectance distribution diagram, the average values of the reflectance and reflected hues of the bridging point region S1, the pattern region S2, and the etching slit region S3 are as shown in Table 2 below:

[0085] Table 2: Reflectance and average hue value of the shadow elimination touch structure 1 in the three regions S1, S2, and S3 in the above first example

[0086] Region item Y_ave a*_ave b*_ave Pattern region S2 0.11 -0.84 -1.67 Etching slit region S3 0.11 -0.16 -0.38 Bridge point region S1 0.10 -0.20 -1.47

[0087] Thus, it can be easily seen from Table 2 above that after undergoing 500 tolerance fluctuation experiments, the reflectance and reflection hue distribution in the bridging point region S1, the pattern region S2, and the etching slit region S3 are relatively concentrated, and their respective average values are very close, which indicates that considering process tolerances, the shadow elimination touch structure 1 of the present application can still achieve the purpose of low-reflection shadow elimination.

[0088] It should be noted that in order to reduce the number of sub-film layers to improve the process friendliness while ensuring the low-reflection shadow elimination effect; as Figure 5 shown, in the second example of the present application, in the shadow elimination film system structure 30, both the first shadow elimination film system 31 and the third shadow elimination film system 33 include three sub-shadow elimination film layers, while the second shadow elimination film system 32 only includes one sub-shadow elimination film layer to form a "one-three-one film system".

[0089] Specifically, as Figure 5 shown, in the above second example of the present application, the first shadow elimination film system 31 includes three first sub-shadow elimination film layers 310, and the refractive indices of the three first sub-shadow elimination film layers 310 show a gradient change of monotonically increasing along the direction away from the substrate 10. The second shadow elimination film system 32 includes one second sub-shadow elimination film layer 320, and the refractive index of the second sub-shadow elimination film layer 320 is less than or equal to the geometric mean of the refractive index of the touch pattern layer 21 and the refractive index of the electrode bridging point layer 22. The third shadow elimination film system 33 includes three third sub-shadow elimination film layers 330, and the refractive indices of the three third sub-shadow elimination film layers 330 show a gradient change of monotonically decreasing along the direction away from the substrate 10. Preferably, the refractive index of the second sub-shadow elimination film layer 320 is substantially equal to the geometric mean of the refractive index of the touch pattern layer 21 and the refractive index of the electrode bridging point layer 22.

[0090] More specifically, as Figure 5 shown, along the direction away from the substrate 10: the materials of the three first sub-shadow elimination film layers 310 in the first shadow elimination film system 31 are successively implemented as SiO8N2, SiO7N3, SiO5N5; the material of the second sub-shadow elimination film layer 320 in the second shadow elimination film system 32 is implemented as SiO2N8; the materials of the three third sub-shadow elimination film layers 330 in the third shadow elimination film system 33 are successively implemented as SiO3N7, SiO4N6, SiO7N3.

[0091] Optionally, the thickness of each first sub-shadow elimination film layer 310 in the first shadow elimination film system 31 is not less than 50 nm and not higher than 600 nm.

[0092] Optionally, the thickness of the second sub-anti-reflection film layer 320 in the second anti-reflection film system 32 is not less than 300 nm and not higher than 600 nm.

[0093] Optionally, the thickness of each third sub-anti-reflection film layer 330 in the third anti-reflection film system 33 is not less than 50 nm and not higher than 500 nm.

[0094] Furthermore, through simulation experiments on the "1-3-1 film system" in the anti-reflection touch structure 1 of the above second example, a reflectivity spectrum diagram as shown in Figure 6A and a reflection hue coordinate diagram as shown in Figure 6B can be obtained. In addition, from the reflectivity spectrum diagram as shown in Figure 6A and the reflection hue coordinate diagram as shown in Figure 6B , the reflectivity and hue coordinate data of the bridging point region S1, the pattern region S2, and the etching slit region S3 are as shown in Table 3 below:

[0095] Table 3: Reflectivity and hue coordinates of the anti-reflection touch structure 1 in the above second example in the three regions S1, S2, and S3

[0096] Region item Y a＊ b＊ Pattern region S2 0.13 -1.05 -1.38 Etching slit region S3 0.09 -0.24 -0.20 Bridge point region S1 0.11 -0.48 -0.68

[0097] In summary, from Figure 6A , Figure 6B and Table 3, it can be seen that: under the combined action of the first anti-reflection film system 31, the second anti-reflection film system 32, and the third anti-reflection film system 33, the reflectivity intensity and reflection hue between the bridging point region S1, the pattern region S2, and the etching slit region S3 are very close, so the human eye is also insensitive to the differences in these three regions, and the purpose of anti-reflection can be achieved; at the same time, although the reflectivity contribution of the anti-reflection touch structure 1 in the above second example is slightly higher than that of the anti-reflection touch structure 1 in the above first example, it is still less than about 0.15%, so the anti-reflection touch structure 1 in the above second example is still friendly to the overall reflectivity of the touch screen.

[0098] In addition, considering the process fluctuations in the actual processing, the present application further conducts five hundred tolerance fluctuation experiments by computer, and obtains a reflection hue distribution diagram as shown in Figure 7A and a reflectivity distribution diagram as shown in Figure 7B . Furthermore, from the reflection hue distribution diagram as shown in Figure 7A and the reflectivity distribution diagram as shown in Figure 7B , the average values of the reflectivity and reflection hue of the bridging point region S1, the pattern region S2, and the etching slit region S3 are as shown in Table 4 below:

[0099] Table 4: Average values of reflectivity and hue of the anti-reflection touch structure 1 in the above second example in the three regions S1, S2, and S3

[0100] Region item Y_ave a*_ave b*_ave Pattern region S2 0.13 -0.91 -1.64 Etching slit region S3 0.09 -0.22 -0.16 Bridge point region S1 0.12 -0.35 -1.01

[0101] In this way, it can be easily seen from Table 4 above that after undergoing 500 tolerance fluctuation experiments, the reflectance and reflection hue distributions in the bridging point region S1, the pattern region S2, and the etching slit region S3 are still relatively concentrated, and their respective average values are very close. This indicates that considering process tolerances, the anti-reflection touch structure 1 of the present application can still achieve the purpose of low-reflection anti-shadowing.

[0102] According to the above embodiments of the present application, when the refractive index of the substrate 10 is the same as that of the adhesive layer 50, the refractive indices of all the first sub-anti-reflection film layers 310 in the first anti-reflection film system 31 and the refractive indices of all the third sub-anti-reflection film layers 330 in the third anti-reflection film system 33 are preferably mirror-symmetric, so as to ensure that the refractive index gradient changes on the upper and lower sides of the transparent conductive structure 20 are mirror-symmetric, which is beneficial to improving the reflectance consistency of the three regions of the bridging point region S1, the pattern region S2, and the etching slit region S3 on the touch screen and obtaining a better hue.

[0103] For example, in the third example of the present application, as Figure 8 shown, in the direction away from the substrate 10: the materials of the three first sub-anti-reflection film layers 310 in the first anti-reflection film system 31 are successively implemented as SiO8N2, SiO7N3, and SiO5N5; the material of the second sub-anti-reflection film layer 320 in the second anti-reflection film system 32 is implemented as SiO2N8; the materials of the three third sub-anti-reflection film layers 330 in the third anti-reflection film system 33 are successively implemented as SiO5N5, SiO7N3, and SiO8N2.

[0104] In addition, when the refractive index of the touch pattern layer 21 is the same as that of the electrode bridging point layer 22, the refractive indices of all the sub-anti-reflection film layers in the first anti-reflection film system 31, the second anti-reflection film system 32, and the third anti-reflection film system 33 are symmetrically distributed, and the middle second sub-anti-reflection film layer 320 in the second anti-reflection film system 32 is the center of symmetry, so as to ensure that the refractive index gradient change of the entire anti-reflection touch structure 1 is mirror-symmetric, which is beneficial to further improving the reflectance consistency of the three regions of the bridging point region S1, the pattern region S2, and the etching slit region S3 on the touch screen and obtaining a better hue.

[0105] For example, in the fourth example of the present application, as Figure 9As shown, in the direction away from the substrate 10: the materials of the three first sub-anti-reflection film layers 310 in the first anti-reflection film system 31 are successively implemented as SiO7N3, SiO5N5, and SiO3N7; the materials of the three second sub-anti-reflection film layers 320 in the second anti-reflection film system 32 are successively implemented as SiO2N8, SiO5N5, and SiO2N8; the materials of the three third sub-anti-reflection film layers 330 in the third anti-reflection film system 33 are successively implemented as SiO3N7, SiO5N5, and SiO7N3.

[0106] It should be noted that, in the above embodiments of the present application, the lower surface of the substrate 10 in the anti-reflection touch structure 1 can be, but is not limited to, pasted and fixed on the upper surface of the display panel 2 through an adhesive layer 50 such as optical adhesive OCA, and the present application will not elaborate on this.

[0107] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0108] The above embodiments only represent several implementation manners of the present invention, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the invention patent. It should be pointed out that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all belong to the protection scope of the present invention.

Claims

1. Shadow elimination touch structure, characterized in that, Comprising: A substrate; A transparent conductive structure, including a touch pattern layer and an electrode bridge layer which are stacked above the substrate and electrically connected to each other; And An anti-reflection film system structure, including a first anti-reflection film system located between the substrate and the transparent conductive structure, a second anti-reflection film system located between the touch pattern layer and the electrode bridge layer, and a third anti-reflection film system located above the transparent conductive structure; the refractive indices of the first anti-reflection film system, the second anti-reflection film system, and the third anti-reflection film system are all not higher than the refractive index of the transparent conductive structure and not lower than the refractive index of the substrate; in the anti-reflection touch structure, the refractive index of the region centered on the touch pattern layer and the electrode bridge layer respectively changes in a gradient manner of first increasing and then decreasing.

2. The shadow elimination touch control structure according to claim 1, wherein The first anti-reflection film system includes M1 first sub-anti-reflection film layers stacked between the substrate and the transparent conductive structure, where M1 is a positive integer greater than or equal to 1 and less than or equal to 5; when M1 > 1, the refractive indices of the multiple first sub-anti-reflection film layers change in a monotonically increasing gradient manner along the direction away from the substrate.

3. The shadow elimination touch control structure according to claim 2, wherein, When M1 > 2, the thicknesses of the multiple first sub-anti-reflection film layers show a trend of first rising and then falling along the direction away from the substrate.

4. The shadow-eliminating touch structure according to claim 1, wherein The second anti-reflection film system includes M2 second sub-anti-reflection film layers stacked between the touch pattern layer and the electrode bridge layer, where M2 is a positive integer greater than or equal to 1 and less than or equal to 5; when M2 > 2, the refractive indices of the multiple second sub-anti-reflection film layers change in a gradient manner of first decreasing and then increasing along the direction away from the substrate; when M2 = 1, the refractive index of the second sub-anti-reflection film layer is equal to the geometric mean of the refractive indices of the touch pattern layer and the electrode bridge layer.

5. The shadow elimination touch control structure according to claim 4, wherein When M2 > 2, the thicknesses of the multiple second sub-anti-reflection film layers show a trend of first rising and then falling along the direction away from the substrate.

6. The shadow elimination touch control structure according to claim 1, wherein The third anti-reflection film system includes M3 third sub-anti-reflection film layers stacked above the transparent conductive structure, where M3 is a positive integer greater than or equal to 1 and less than or equal to 5; when M3 > 1, the refractive indices of the multiple third sub-anti-reflection film layers change in a monotonically decreasing gradient manner along the direction away from the substrate.

7. The shadow elimination touch control structure according to claim 6, wherein When M3 > 2, the thicknesses of the multiple third sub-anti-reflection film layers show a trend of first rising and then falling along the direction away from the substrate.

8. The shadow elimination touch control structure according to claim 1, wherein In the direction away from the substrate: the materials of the three first sub-anti-reflection film layers in the first anti-reflection film system are SiO7N3, SiO5N5, and SiO3N7 in sequence; the materials of the three second sub-anti-reflection film layers in the second anti-reflection film system are SiO2N8, SiO5N5, and SiO2N8 in sequence; the materials of the three third sub-anti-reflection film layers in the third anti-reflection film system are SiO4N6, SiO5N5, and SiO7N3 in sequence; Alternatively, in the direction away from the substrate: the materials of the three first sub-anti-reflection film layers in the first anti-reflection film system are SiO8N2, SiO7N3, and SiO5N5 in sequence; the material of the second sub-anti-reflection film layer in the second anti-reflection film system is SiO2N8; the materials of the three third sub-anti-reflection film layers in the third anti-reflection film system are SiO3N7, SiO4N6, and SiO7N3 in sequence.

9. The shadow elimination touch control structure according to any one of claims 1 to 7, wherein The anti-reflection touch structure further includes a cover plate and an adhesive layer disposed between the cover plate and the third anti-reflection film system; when the refractive index of the adhesive layer is consistent with the refractive index of the substrate, the refractive indices of all the sub-anti-reflection film layers in the first anti-reflection film system are mirror-symmetric with the refractive indices of all the sub-anti-reflection film layers in the third anti-reflection film system.

10. The shadow elimination touch control structure according to claim 9, wherein, When the refractive index of the touch pattern layer is consistent with the refractive index of the electrode bridge point layer, the refractive indices of all the sub-anti-reflection film layers in the first anti-reflection film system, the second anti-reflection film system, and the third anti-reflection film system are symmetrically distributed, and the middle second sub-anti-reflection film layer in the second anti-reflection film system is the center of symmetry.

11. Touch screen, characterized in that, Comprising: A display panel; And An anti-reflection touch structure according to any one of claims 1 to 10, wherein the anti-reflection touch structure is stacked above the display panel.

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