Nuclear reactor piezoelectric sensor sensitive material optimization method, device and medium

By preparing and optimizing sensitive materials for piezoelectric sensors in nuclear reactors, the problem of the sensor's piezoelectric constant decrease in high-temperature nuclear radiation environment is solved, and the sensor's high-sensitivity fault monitoring is realized in harsh environments.

CN120277864APending Publication Date: 2025-07-08NUCLEAR POWER INSTITUTE OF CHINA
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Patent Information

Application Number
CN202510168749.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-17
Publication Date
2025-07-08

AI Technical Summary

Technical Problem

The piezoelectric constant of piezoelectric sensors is significantly reduced in high temperature and nuclear radiation environments, resulting in a decrease in sensitivity and affecting the accuracy and reliability of fault monitoring of key equipment of nuclear reactors.

Method used

The initial sensitive material samples are prepared based on the sensitive material template and the initial element doping scheme, and irradiation experiments and high-temperature performance tests are performed. The element doping scheme is dynamically adjusted until the target of the average sample parameter change rate meets the preset threshold is obtained.

Benefits of technology

The piezoelectric constant of piezoelectric sensors in high-temperature radiation environments has been improved, and the accuracy of fault monitoring of key equipment of nuclear reactors has been improved.

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Abstract

The invention relates to the technical field of nuclear reactors, and provides a nuclear reactor piezoelectric sensor sensitive material optimization method and device and a medium, and the method comprises the steps: 1, determining an initial sensitive material sample based on a sensitive material template and an initial element doping scheme; 2, performing an irradiation experiment on the initial sensitive material sample, and determining irradiation parameters corresponding to the initial sensitive material sample based on an experiment result; 3, determining the average parameter change rate of the sample based on the irradiation parameters corresponding to the plurality of initial sensitive material samples and the high-temperature performance parameters corresponding to the plurality of initial sensitive material samples subjected to the irradiation experiment, and judging whether the average parameter change rate of the sample is smaller than a preset threshold value or not; if yes, determining the initial sensitive material sample as a target optimization sensitive material; and if not, adjusting the initial element doping scheme, and returning to the step 1. According to the embodiment, the piezoelectric coefficient of the piezoelectric sensitive material in a high-temperature nuclear radiation environment is improved, and the fault monitoring precision of key equipment of a nuclear reactor is improved.
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Description

Technical Field

[0001] The present disclosure relates to the technical field of nuclear reactors, and in particular, to an optimization method, device and medium for sensitive materials of piezoelectric sensors in nuclear reactors. Background Technique

[0002] Nuclear reactors are an important part of the modern energy industry and are widely used in fields such as power generation and nuclear power. Reactors operate in high-temperature, high-pressure and strong radiation environments. During long-term use, their core equipment will encounter problems such as wear, jamming, and leakage. These faults not only affect the stability of the system but may also reduce the regulation efficiency of the reactor. To ensure the safety and reliability of nuclear reactors, it is particularly important to monitor the health of their key equipment in a timely manner. The health monitoring system relies on sensor technology. The sensors need to be able to work stably in harsh environments. Piezoelectric sensors such as acceleration sensors, acoustic emission sensors, and pressure pulsation sensors are widely used in the health monitoring of nuclear reactors to achieve precise detection of equipment faults.

[0003] However, in the related art, there are still some challenges in the environmental adaptability of piezoelectric sensors. Especially in high-temperature and nuclear radiation environments, the piezoelectric constants of sensors may decrease significantly, resulting in a decrease in sensitivity, which in turn affects the accuracy and reliability of sensor monitoring of key equipment faults in nuclear reactors. Summary of the Invention

[0004] Embodiments of the present disclosure at least provide an optimization method, device and medium for sensitive materials of piezoelectric sensors in nuclear reactors. By preparing an initial sensitive material sample based on a sensitive material template and an initial element doping scheme, irradiating experiments and high-temperature performance tests are carried out on it, and the element doping scheme is dynamically adjusted in combination with the experimental results until a target optimized sensitive material with an average parameter change rate of the sample meeting a preset threshold is obtained, which realizes the improvement of the piezoelectric constant of the new sensitive material in a high-temperature radiation environment. The piezoelectric sensor made according to this sensitive material has a high sensitivity, which improves the accuracy of monitoring key equipment faults in nuclear reactors.

[0005] Embodiments of the present disclosure provide an optimization method for sensitive materials of piezoelectric sensors in nuclear reactors, including:

[0006] Step 1, determining an initial sensitive material sample based on a sensitive material template and an initial element doping scheme;

[0007] Step 2, performing an irradiating experiment on the initial sensitive material sample, and determining irradiation parameters corresponding to the initial sensitive material sample based on the experimental results;

[0008] Step 3: Determine the average parameter change rate of the samples based on the irradiation parameters corresponding to multiple initial sensitive material samples and the high-temperature performance parameters corresponding to multiple initial sensitive material samples after the irradiation experiment, and determine whether the average parameter change rate of the samples is less than a preset threshold; if so, determine the initial sensitive material sample as the target optimized sensitive material; if not, adjust the initial element doping scheme and return to Step 1.

[0009] In some possible embodiments, before performing the irradiation experiment on the initial sensitive material sample, it includes:

[0010] Determine the piezoelectric coefficient of the initial sensitive material sample; and perform breakdown tests on a preset number of the initial sensitive material samples, and determine the breakdown rate of the initial sensitive material sample based on the experimental results;

[0011] Determine whether the piezoelectric coefficient of the initial sensitive material sample meets the preset piezoelectric condition, and determine whether the breakdown rate of the initial sensitive material sample meets the preset breakdown condition;

[0012] In the case where the piezoelectric coefficient of the initial sensitive material sample does not meet the preset piezoelectric condition, and / or the breakdown rate of the initial sensitive material sample does not meet the preset breakdown condition, the initial sensitive material sample is unqualified, adjust the initial element doping scheme, and return to Step 1 to re-determine the initial sensitive material sample.

[0013] In some possible embodiments, before performing the irradiation experiment on the initial sensitive material sample, it includes:

[0014] Determine the high-temperature performance parameters corresponding to the initial sensitive material sample; wherein, the high-temperature performance parameters include the change curves of the dielectric constant and the dielectric loss value with temperature, the electromechanical coupling coefficient, and the macroscopic ferroelectric performance P-E curve.

[0015] In some possible embodiments, the irradiation parameter includes the maximum change rate of the piezoelectric coefficient; the irradiation experiment on the initial sensitive material sample includes:

[0016] Perform an irradiation experiment on the initial sensitive material sample, and measure the piezoelectric coefficient of the initial sensitive material sample at multiple preset irradiation dose nodes until the cumulative irradiation dose reaches the target maximum cumulative dose;

[0017] Determine the maximum change rate of the piezoelectric coefficient corresponding to the initial sensitive material sample based on the piezoelectric coefficients of the initial sensitive material sample at different irradiation dose nodes.

[0018] In some possible embodiments, the average parameter change rate includes the average maximum change rate of the piezoelectric coefficient of the sample, the average maximum change rate of the dielectric temperature spectrum of the sample, the average maximum change rate of the electromechanical coupling coefficient of the sample, and the average maximum change rate of the ferroelectric properties of the sample; determining the average parameter change rate of the sample based on the irradiation parameters corresponding to a plurality of the initial sensitive material samples and the high-temperature performance parameters corresponding to the plurality of the initial sensitive material samples after the irradiation experiment includes:

[0019] Determining the average maximum change rate of the piezoelectric coefficient of the sample based on the maximum change rates of the piezoelectric coefficients corresponding to a plurality of the initial sensitive material samples;

[0020] Determining the high-temperature performance parameters corresponding to each of the initial sensitive material samples after the irradiation experiment;

[0021] Determining the average maximum change rate of the dielectric temperature spectrum of the sample based on the curves of the dielectric constant and dielectric loss values of the initial sensitive material samples corresponding thereto changing with temperature and the curves of the dielectric constant and dielectric loss values of each of the initial sensitive material samples after the irradiation experiment corresponding thereto changing with temperature;

[0022] Determining the average maximum change rate of the electromechanical coupling coefficient of the sample based on the electromechanical coupling coefficients corresponding to the initial sensitive material samples and the electromechanical coupling coefficients corresponding to each of the initial sensitive material samples after the irradiation experiment;

[0023] Determining the average maximum change rate of the ferroelectric properties of the sample based on the macroscopic ferroelectric property P-E curves corresponding to the initial sensitive material samples and the macroscopic ferroelectric property P-E curves corresponding to each of the initial sensitive material samples after the irradiation experiment.

[0024] In some possible embodiments, determining the initial sensitive material sample as the target optimized sensitive material includes:

[0025] Determining the variance of the initial sensitive material sample based on the average maximum change rate of the piezoelectric coefficient of the sample, the average maximum change rate of the dielectric temperature spectrum of the sample, the average maximum change rate of the electromechanical coupling coefficient of the sample, and the average maximum change rate of the ferroelectric properties of the sample;

[0026] Judging whether the variance meets a preset stability condition; if it meets, determining the initial sensitive material sample as the target optimized sensitive material; if it does not meet, the initial sensitive material sample is unqualified, adjusting the initial element doping scheme, and returning to step 1 to re-determine the initial sensitive material sample.

[0027] In some possible embodiments, the sensitive material template includes Ca 1-x (NaBi) 0.5xBi2Nb2O9 + y mol% LiNbO3, where 0 < x < 1 and y > 0.

[0028] The embodiment of the present disclosure provides an optimization device for the sensitive material of a piezoelectric sensor in a nuclear reactor, including:

[0029] A sample determination module, configured to execute step 1 to determine an initial sensitive material sample based on a sensitive material template and an initial element doping scheme;

[0030] A parameter determination module, configured to execute step 2 to perform an irradiation experiment on the initial sensitive material sample and determine irradiation parameters corresponding to the initial sensitive material sample based on the experimental results;

[0031] A material judgment module, configured to execute step 3 to determine an average parameter change rate of the sample based on the irradiation parameters corresponding to a plurality of the initial sensitive material samples and the high-temperature performance parameters corresponding to the plurality of initial sensitive material samples after the irradiation experiment, and judge whether the average parameter change rate of the sample is less than a preset threshold; if so, determine the initial sensitive material sample as the target optimized sensitive material; if not, adjust the initial element doping scheme and return to step 1.

[0032] In some possible embodiments, the parameter determination module is further configured to:

[0033] Determine the piezoelectric coefficient of the initial sensitive material sample; and perform a breakdown test on a preset number of the initial sensitive material samples and determine the breakdown rate of the initial sensitive material sample based on the experimental results;

[0034] Judge whether the piezoelectric coefficient of the initial sensitive material sample meets a preset piezoelectric condition and judge whether the breakdown rate of the initial sensitive material sample meets a preset breakdown condition;

[0035] In the case where the piezoelectric coefficient of the initial sensitive material sample does not meet the preset piezoelectric condition, and / or the breakdown rate of the initial sensitive material sample does not meet the preset breakdown condition, the initial sensitive material sample is unqualified, adjust the initial element doping scheme and return to step 1 to re-determine the initial sensitive material sample.

[0036] In some possible embodiments, the parameter determination module is further configured to:

[0037] Determine the high-temperature performance parameters corresponding to the initial sensitive material sample; where the high-temperature performance parameters include the curves of the dielectric constant and dielectric loss value varying with temperature, the electromechanical coupling coefficient, and the macroscopic ferroelectric performance P-E curve.

[0038] In some possible embodiments, the irradiation parameters include the maximum change rate of the piezoelectric coefficient; the parameter determination module is specifically configured to:

[0039] Irradiation experiments are carried out on the initial sensitive material sample, and the piezoelectric coefficient of the initial sensitive material sample is tested at multiple preset irradiation dose nodes until the cumulative irradiation dose reaches the target maximum cumulative dose;

[0040] Based on the piezoelectric coefficients of the initial sensitive material sample at different irradiation dose nodes, the maximum change rate of the piezoelectric coefficient corresponding to the initial sensitive material sample is determined.

[0041] In some possible embodiments, the average parameter change rate includes the average maximum change rate of the sample piezoelectric coefficient, the average maximum change rate of the sample dielectric temperature spectrum, the average maximum change rate of the sample electromechanical coupling coefficient, and the average maximum change rate of the sample ferroelectric performance; the material judgment module is specifically configured to:

[0042] Based on the maximum change rates of the piezoelectric coefficients corresponding to multiple initial sensitive material samples, the average maximum change rate of the sample piezoelectric coefficient is determined;

[0043] Determine the high-temperature performance parameters corresponding to each of the initial sensitive material samples after the irradiation experiment;

[0044] Based on the curves of the dielectric coefficient and dielectric loss value of the initial sensitive material sample changing with temperature and the curves of the dielectric coefficient and dielectric loss value of each of the initial sensitive material samples after the irradiation experiment changing with temperature, the average maximum change rate of the sample dielectric temperature spectrum is determined;

[0045] Based on the electromechanical coupling coefficients corresponding to the initial sensitive material sample and the electromechanical coupling coefficients corresponding to each of the initial sensitive material samples after the irradiation experiment, the average maximum change rate of the sample electromechanical coupling coefficient is determined;

[0046] Based on the macroscopic ferroelectric performance P-E curves corresponding to the initial sensitive material sample and the macroscopic ferroelectric performance P-E curves corresponding to each of the initial sensitive material samples after the irradiation experiment, the average maximum change rate of the sample ferroelectric performance is determined.

[0047] In some possible embodiments, the material judgment module is specifically configured to:

[0048] Based on the average maximum change rate of the sample piezoelectric coefficient, the average maximum change rate of the sample dielectric temperature spectrum, the average maximum change rate of the sample electromechanical coupling coefficient, and the average maximum change rate of the sample ferroelectric performance, the variance of the initial sensitive material sample is determined;

[0049] Determine whether the variance satisfies a preset stability condition; if it does, determine the initial sensitive material sample as the target optimized sensitive material; if it does not, the initial sensitive material sample is unqualified, adjust the initial element doping scheme, and return to step 1 to re-determine the initial sensitive material sample.

[0050] In some possible embodiments, the sensitive material template includes Ca 1-x (NaBi) 0.5x Bi2Nb2O9 + y mol% LiNbO3; where 0 < x < 1 and y > 0.

[0051] An embodiment of the present disclosure provides a computer device, including: a processor, a memory, and a bus. The memory stores machine-readable instructions executable by the processor. When the computer device runs, the processor communicates with the memory through the bus. When the machine-readable instructions are executed by the processor, they execute the method for optimizing the sensitive material of the piezoelectric sensor in the nuclear reactor as described in any of the above possible implementation manners.

[0052] An embodiment of the present disclosure provides a computer-readable storage medium, on which a computer program is stored. When the computer program is run by a processor, it implements the method for optimizing the sensitive material of the piezoelectric sensor in the nuclear reactor as described in any of the above possible implementation manners.

[0053] The method, device, and medium for optimizing the sensitive material of the piezoelectric sensor in the nuclear reactor provided in the embodiments of the present disclosure prepare an initial sensitive material sample based on a sensitive material template and an initial element doping scheme, conduct irradiation experiments and high-temperature performance tests on it, and dynamically adjust the element doping scheme in combination with the experimental results until a target optimized sensitive material with an average parameter change rate of the sample satisfying a preset threshold is obtained, realizing the improvement of the piezoelectric constant of the new sensitive material in a high-temperature radiation environment. The piezoelectric sensor made of this sensitive material has a high sensitivity, improving the accuracy of fault monitoring of key equipment in the nuclear reactor.

[0054] To make the above objects, features, and advantages of the present disclosure more obvious and understandable, the following specifically enumerates preferred embodiments and, in conjunction with the accompanying drawings, makes a detailed description as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] To more clearly illustrate the technical solutions of the embodiments of the present disclosure, the attached drawings required to be cited in the embodiments will be briefly introduced below. The attached drawings herein are incorporated into the specification and constitute a part of this specification. These attached drawings show the embodiments that conform to the present disclosure and are used together with the specification to illustrate the technical solutions of the present disclosure. It should be understood that the following attached drawings only show some embodiments of the present disclosure, and thus should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related attached drawings can also be obtained based on these attached drawings.

[0056] Figure 1 It shows a flowchart of a method for optimizing the sensitive material of a piezoelectric sensor in a nuclear reactor provided by an embodiment of the present disclosure;

[0057] Figure 2 It shows a flowchart of a method for conducting an irradiation experiment on an initial sensitive material sample provided by an embodiment of the present disclosure;

[0058] Figure 3 It shows a flowchart of a method for determining the average parameter change rate of a sample provided by an embodiment of the present disclosure;

[0059] Figure 4 It shows a schematic structural diagram of an optimization device for the sensitive material of a piezoelectric sensor in a nuclear reactor provided by an embodiment of the present disclosure;

[0060] Figure 5 It shows a schematic structural diagram of a computer device provided by an embodiment of the present disclosure. Detailed implementation manners

[0061] To make the objectives, technical solutions, and advantages of the embodiments of the present disclosure clearer, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the attached drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only some of the embodiments of the present disclosure, rather than all of the embodiments. Usually, the components of the embodiments of the present disclosure described and shown in the attached drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present disclosure provided in the attached drawings is not intended to limit the scope of the present disclosure to be protected, but only represents the selected embodiments of the present disclosure. Based on the embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present disclosure.

[0062] It should be noted that: similar reference numerals and letters represent similar items in the following attached drawings. Therefore, once an item is defined in one attached drawing, it does not need to be further defined and explained in subsequent attached drawings.

[0063] As used herein, the term "and / or" merely describes an associated relationship, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Additionally, the term "at least one" as used herein means any one of multiple or any combination of at least two of multiple. For example, including at least one of A, B, and C can mean including any one or more elements selected from the set composed of A, B, and C.

[0064] As an important part of the modern energy industry, nuclear reactors are widely used in key fields such as power generation and nuclear power. These reactors usually operate in extremely harsh environments, including high temperature, high pressure, and strong radiation conditions. In such an environment, the core equipment of the reactor (such as fuel assemblies, control rod drive mechanisms, cooling systems, etc.) may encounter complex problems such as wear, jamming, and leakage during long-term use. These problems not only seriously affect the stability of the reactor system but also may significantly reduce its regulation efficiency and safety.

[0065] To ensure the safety and reliability of nuclear reactors, it becomes particularly important to conduct health monitoring on their key equipment in a timely manner. Health monitoring systems usually rely on advanced sensor technologies, and these sensors must be able to work stably in the above-mentioned harsh environment and accurately collect the operation data of key equipment.

[0066] It has been found through research that piezoelectric sensors such as acceleration sensors, acoustic emission sensors, and pressure pulsation sensors are widely used in the health monitoring of nuclear reactors due to their high sensitivity, good dynamic response characteristics, and adaptability. However, in related technologies, there are still some challenges in the environmental adaptability of piezoelectric sensors. Especially in high-temperature and nuclear radiation environments, the piezoelectric constant of the sensor may decrease significantly, resulting in a decrease in sensitivity. This decrease in sensitivity will directly affect the accuracy and reliability of the sensor for monitoring the faults of key equipment in nuclear reactors.

[0067] Based on the above research, embodiments of the present disclosure provide a method, device, and medium for optimizing the sensitive material of a piezoelectric sensor for a nuclear reactor, including: Step 1, determining an initial sensitive material sample based on a sensitive material template and an initial element doping scheme; Step 2, conducting an irradiation experiment on the initial sensitive material sample and determining the irradiation parameters corresponding to the initial sensitive material sample based on the experimental results; Step 3, determining the sample average parameter change rate based on the irradiation parameters corresponding to multiple initial sensitive material samples and the high-temperature performance parameters corresponding to multiple initial sensitive material samples after the irradiation experiment, and determining whether the sample average parameter change rate meets a preset threshold; if it meets, determining the initial sensitive material sample as the target optimized sensitive material; if it does not meet, adjusting the initial element doping scheme and returning to Step 1.

[0068] In the embodiments of the present disclosure, an initial sensitive material sample is prepared based on a sensitive material template and an initial element doping scheme, and an irradiation experiment and a high-temperature performance test are performed on the sample. The element doping scheme is dynamically adjusted in combination with the experimental results until a target optimized sensitive material with an average parameter change rate of the sample meeting a preset threshold is obtained, thereby realizing an increase in the piezoelectric constant of the novel sensitive material in a high-temperature radiation environment. The piezoelectric sensor fabricated based on this sensitive material has a high sensitivity, improving the accuracy of fault monitoring of key equipment in nuclear reactors.

[0069] To facilitate the understanding of this embodiment, the execution subject of the sensitive material optimization method for piezoelectric sensors in nuclear reactors provided by the embodiments of the present disclosure will be introduced in detail first. The execution subject of the sensitive material optimization method for piezoelectric sensors in nuclear reactors provided by the embodiments of the present disclosure is a computer device. This computer device can be a server. Among them, the server can be an independent physical server, or a server cluster or distributed system composed of multiple physical servers, or a cloud server providing basic cloud computing services such as cloud services, cloud databases, cloud computing, cloud storage, big data, and artificial intelligence platforms.

[0070] The following will describe in detail the sensitive material optimization method for piezoelectric sensors in nuclear reactors provided by the embodiments of the present application with reference to the accompanying drawings. Refer to Figure 1 As shown, it is a flowchart of a sensitive material optimization method for piezoelectric sensors in nuclear reactors provided by the embodiments of the present disclosure. The method includes the following S101 to S103:

[0071] S101, determining an initial sensitive material sample based on a sensitive material template and an initial element doping scheme.

[0072] It can be understood that by replacing some ions in the sensitive material with elements having similar ionic radii or valences, due to the differences in chemical valence and ionic radius between the replaced and the replacing ions, A-site doping will cause a certain lattice distortion, thereby improving the piezoelectric coefficient of the sensitive material to a certain extent. Among them, lanthanide rare earth elements are the most commonly used and effective doping elements for improving this type of piezoelectric ceramic sensitive material. When doping, they can replace the volatile Bi at the A-site, reduce the concentration of oxygen vacancies, thereby improving the performance, and can also effectively reduce the microscopic defects caused by nuclear radiation and enhance the radiation resistance. At the same time, the doping of Na + to a certain extent improves the density of the piezoelectric ceramic sample, makes the lattice more uniform, significantly reduces the pore content, and improves the piezoelectric performance of the ceramic sample.

[0073] Meanwhile, when determining the initial sensitive material sample, the present disclosure selects a multi-component system mixing method. The multi-component system mixing refers to solid-soluting two materials with complementary properties and similar structures in a certain proportion to form a composite structure ceramic. The multi-component mixing system is a composite phase structure, which may have better properties than the single-phase structure formed by the symbiotic structure. The most prominent features of the LiNbO3 crystal are its high Curie point, large spontaneous polarization intensity, large electromechanical coupling coefficient, and high mechanical quality factor. As a piezoelectric transducer, there is no obvious depolarization phenomenon even when the temperature rises to 1050°C. Adding an appropriate amount of LiNbO3 to this type of piezoelectric sensitive material is expected to further improve the density, piezoelectric properties, and Curie temperature of the ceramic.

[0074] Therefore, the initial sensitive material sample proposed by the present disclosure is obtained through element doping and multi-source system mixing. The sensitive material template can be expressed as Ca 1-x (NaBi) 0.5x Bi2Nb2O9 + y mol% LiNbO3; where x and y are the doping amounts in the element doping scheme, 0 < x < 1, y > 0. The element doping scheme stipulates the values of x and y. By performing element doping and multi-source system mixing according to the values stipulated in the element doping scheme through the sensitive material template, the initial sensitive material sample can be obtained. Here, the initial element doping scheme can be set such that x takes the value of 0.2, y takes the value of 0.5, or other value schemes, and the specific values are not limited.

[0075] S102. Conduct an irradiation experiment on the initial sensitive material sample, and determine the irradiation parameters corresponding to the initial sensitive material sample based on the experimental results.

[0076] Specifically, the irradiation experiment refers to irradiating a material with radiation (such as X-rays, γ-rays, electron beams, etc.) to study the physical, chemical, and mechanical property changes of the material under the action of radiation. In the present disclosure, in order to comprehensively and accurately evaluate the stability and property changes of the initial sensitive material sample under radiation conditions, γ-irradiation testing is particularly selected as the experimental means. γ-irradiation testing is widely used in many fields such as materials science, biomedicine, and environmental protection because of its advantages such as strong penetration, easy dose control, and repeatable experimental conditions. Through γ-irradiation testing, the actual use situation of the material in the radiation environment of nuclear facilities can be simulated, and then the radiation resistance and long-term stability of the material can be evaluated. Here, the irradiation parameters can include the maximum change rate of the piezoelectric coefficient, mechanical strength, thermal stability, etc. Among them, the piezoelectric coefficient is an important index to measure the performance of piezoelectric materials and can reflect the change of piezoelectric properties of the material under the action of radiation.

[0077] Exemplarily, referring to Figure 2 As shown, when conducting an irradiation experiment on the initial sensitive material sample, the following steps S201 to S202 can be included:

[0078] S201, conduct an irradiation experiment on the initial sensitive material sample, and test the piezoelectric coefficient of the initial sensitive material sample at multiple preset irradiation dose nodes until the cumulative irradiation dose reaches the target maximum cumulative dose.

[0079] Specifically, an irradiation test can be conducted on the initial sensitive material sample. Meanwhile, at multiple preset irradiation dose nodes, a quasi-static tester is used to accurately measure the piezoelectric coefficient of the material to capture the changes in the piezoelectric properties of the material under different irradiation doses. Then, continue the irradiation and testing until the cumulative irradiation dose reaches the preset target maximum cumulative dose.

[0080] S202, determine the maximum change rate of the piezoelectric coefficient corresponding to the initial sensitive material sample based on the piezoelectric coefficients of the initial sensitive material sample at different irradiation dose nodes.

[0081] It can be understood that based on the piezoelectric coefficient data at different irradiation dose nodes collected in step S201, through calculation and analysis, the maximum change rate of the piezoelectric coefficient corresponding to the initial sensitive material sample can be determined. This parameter reflects the maximum fluctuation amplitude of the piezoelectric properties of the material under irradiation conditions and can be used to evaluate the radiation resistance performance of the material.

[0082] Exemplarily, to ensure the performance stability and reliability of the initial sensitive material sample before the irradiation experiment, the present disclosure also proposes that a series of pre-tests need to be conducted before the irradiation experiment on the initial sensitive material sample, specifically including the following (1)-(3):

[0083] (1) Determine the piezoelectric coefficient of the initial sensitive material sample; and conduct a breakdown test on a preset number of the initial sensitive material samples, and determine the breakdown rate of the initial sensitive material sample based on the experimental results;

[0084] (2) Judge whether the piezoelectric coefficient of the initial sensitive material sample meets the preset piezoelectric condition, and judge whether the breakdown rate of the initial sensitive material sample meets the preset breakdown condition;

[0085] (3) In the case where the piezoelectric coefficient of the initial sensitive material sample does not meet the preset piezoelectric condition, and / or the breakdown rate of the initial sensitive material sample does not meet the preset breakdown condition, the initial sensitive material sample is unqualified, adjust the initial element doping scheme, and return to step 1 to re-determine the initial sensitive material sample.

[0086] It is understandable that the piezoelectric coefficient of the initial sensitive material sample can be directly measured by a quasi-static tester, and the electrical strength of the material can be evaluated through a breakdown test, that is, the maximum electric field strength that the material can withstand without being damaged under the action of an electric field. The breakdown rate reflects the consistency of the electrical strength among batches of materials. Among them, the preset quantity can be set according to specific experimental requirements, such as 15, 20, etc., and no specific limitation is made here.

[0087] Here, the preset piezoelectric condition and the preset breakdown condition are performance thresholds set based on actual application requirements, and are used to screen out material samples that meet the requirements in terms of performance. In the present disclosure, the preset piezoelectric condition can be set such that the average piezoelectric coefficient is not less than the piezoelectric performance threshold value, and the preset breakdown condition can be set such that the breakdown rate is not greater than the breakdown rate threshold value.

[0088] Specifically, if the sample fails the pre-test, it indicates that the current element doping scheme may need to be adjusted to optimize the performance of the material. By adjusting the proportion of the doping elements, return to step S101, prepare the sample again and conduct the pre-test until an initial sensitive material sample that meets the performance requirements is obtained, and then proceed to the subsequent steps.

[0089] Exemplarily, before conducting an irradiation experiment on the initial sensitive material sample, a high-temperature performance test of the material can also be carried out to obtain the high-temperature performance parameters corresponding to the initial sensitive material sample. Among them, the high-temperature performance parameters include the change curves of the dielectric constant and the dielectric loss value with temperature, the electromechanical coupling coefficient, and the macroscopic ferroelectric performance P-E curve. Here, a dielectric temperature test system can be used to test the dielectric temperature spectrum of the sample to obtain the change curves of the dielectric constant and the dielectric loss value of the sample with temperature, so as to observe the trends and laws of the changes of the dielectric constant and the dielectric loss value of the sample with temperature; a precision impedance analyzer can be used to test the electromechanical coupling coefficient of the piezoelectric sensitive element sample, which is an important index to measure the conversion efficiency of mechanical energy and electrical energy of the piezoelectric material; a ferroelectric tester is used to test the macroscopic ferroelectric performance of the piezoelectric sensitive element to obtain the macroscopic ferroelectric performance P-E curve, which reflects the polarization state and change trend of the material under the action of an electric field.

[0090] S103, determine the sample average parameter change rate based on the irradiation parameters corresponding to multiple initial sensitive material samples and the high-temperature performance parameters corresponding to multiple initial sensitive material samples after the irradiation experiment, and determine whether the sample average parameter change rate is less than a preset threshold; if so, determine the initial sensitive material sample as the target optimized sensitive material; if not, adjust the initial element doping scheme and return to step S101.

[0091] It can be understood that the average parameter change rate includes the average maximum change rate of the piezoelectric coefficient of the sample, the average maximum change rate of the dielectric temperature spectrum of the sample, the average maximum change rate of the electromechanical coupling coefficient of the sample, and the average maximum change rate of the ferroelectric properties of the sample. Refer to Figure 3 As shown in

[0092] S301, determining the average maximum change rate of the piezoelectric coefficient of the sample based on the maximum change rates of the piezoelectric coefficients of multiple initial sensitive material samples.

[0093] Here, by averaging the maximum change rates of the piezoelectric coefficients of each initial sensitive material sample, the average maximum change rate of the piezoelectric coefficient of the sample can be obtained.

[0094] S302, determining the high-temperature performance parameters corresponding to each of the initial sensitive material samples after the irradiation experiment.

[0095] Specifically, a high-temperature performance test of the material is carried out on each initial sensitive material sample after the irradiation experiment to obtain the high-temperature performance parameters corresponding to each initial sensitive material sample after the irradiation experiment.

[0096] S303, determining the average maximum change rate of the dielectric temperature spectrum of the sample based on the curves of the dielectric constant and dielectric loss values of the initial sensitive material samples changing with temperature and the curves of the dielectric constant and dielectric loss values of each of the initial sensitive material samples after the irradiation experiment changing with temperature.

[0097] Here, the dielectric temperature spectrum reflects the trend of the dielectric constant and dielectric loss of the material changing with temperature. By respectively plotting the curves of the dielectric constant and dielectric loss of the initial sample and the sample after irradiation changing with temperature, the change of the electrical properties of the material at different temperatures can be clearly seen. By calculation, the average maximum change rate of the dielectric temperature spectrum of the sample can be obtained. By calculating the maximum change rates of these change curves and taking the average value, the average maximum change rate of the dielectric temperature spectrum of the sample can be obtained. This step helps to evaluate the impact of irradiation on the dielectric properties of the material.

[0098] S304, determining the average maximum change rate of the electromechanical coupling coefficient of the sample based on the electromechanical coupling coefficients of the initial sensitive material samples and the electromechanical coupling coefficients of each of the initial sensitive material samples after the irradiation experiment.

[0099] Here, the electromechanical coupling coefficient is an important indicator to measure the piezoelectric effect of materials. By comparing the electromechanical coupling coefficients of the initial sensitive material samples and the samples after irradiation, the influence of irradiation on the electromechanical coupling performance of the materials can be evaluated. By calculating the maximum change rate of these coefficients and taking the average value, the average maximum change rate of the electromechanical coupling coefficient of the samples can be obtained, which helps to quantify the influence of irradiation on the piezoelectric conversion efficiency of the materials.

[0100] S305, based on the macroscopic ferroelectric property P-E curve corresponding to the initial sensitive material sample and the macroscopic ferroelectric property P-E curve corresponding to each of the initial sensitive material samples after the irradiation experiment, determines the average maximum change rate of the ferroelectric properties of the samples.

[0101] Here, the ferroelectric property is one of the important characteristics of sensitive materials and is usually described by the macroscopic P-E (polarization-electric field) curve. By comparing the P-E curves of the initial sensitive material samples and the samples after irradiation, the change in the ferroelectric properties of the materials under the action of irradiation can be directly seen. By comparing the P-E curves of the initial sensitive material samples and the samples after irradiation, the change in the ferroelectric properties of the materials under the action of irradiation can be directly seen. By analyzing the maximum change amplitude between the two (such as the change in parameters such as remanent polarization intensity and coercive field), the average maximum change rate of the ferroelectric properties of the samples is finally calculated, which provides a reference for evaluating the long-term reliability of the materials in the irradiation environment.

[0102] In the embodiments of the present disclosure, by systematically evaluating the influence of irradiation on various properties of sensitive materials, a comprehensive quantification and accurate evaluation of the change in material properties are achieved, providing a scientific basis for material selection, optimization, and scientific research progress.

[0103] Specifically, after obtaining the average maximum change rate of the piezoelectric coefficient of the samples, the average maximum change rate of the dielectric temperature spectrum of the samples, the average maximum change rate of the electromechanical coupling coefficient of the samples, and the average maximum change rate of the ferroelectric properties of the samples, it is necessary to judge whether the average change rate of each sample parameter is less than its respective preset threshold. If the average change rate of any of the measured sample parameters is not less than its corresponding preset threshold, the initial sensitive material sample is unqualified, and it is necessary to adjust the initial element doping scheme and return to step S101 to re-determine the initial sensitive material sample.

[0104] Exemplarily, if the average change rate of each sample parameter is less than its corresponding preset threshold, a comprehensive calculation is performed based on the average maximum change rate of the piezoelectric coefficient of the samples, the average maximum change rate of the dielectric temperature spectrum of the samples, the average maximum change rate of the electromechanical coupling coefficient of the samples, and the average maximum change rate of the ferroelectric properties of the samples to obtain the comprehensive optimization coefficient of the initial sensitive material sample, and then the variance of the initial sensitive material sample is determined. Among them, the calculation formula of the comprehensive optimization coefficient can be expressed as:

[0105]

[0106] Among them, Q represents the comprehensive optimization coefficient of the initial sensitive material sample; Q1 represents the weight corresponding to the average maximum change rate of the piezoelectric coefficient of the sample; D1 represents the average maximum change rate of the piezoelectric coefficient of the sample; Q2 represents the weight corresponding to the average maximum change rate of the dielectric temperature spectrum of the sample; D2 represents the average maximum change rate of the dielectric temperature spectrum of the sample; Q3 represents the weight corresponding to the average maximum change rate of the electromechanical coupling coefficient of the sample; D3 represents the average maximum change rate of the electromechanical coupling coefficient of the sample; Q4 represents the weight corresponding to the average maximum change rate of the ferroelectric performance of the sample; D4 represents the average maximum change rate of the ferroelectric performance of the sample.

[0107] Specifically, after obtaining the comprehensive optimization coefficient of the initial sensitive material sample, the comprehensive optimization coefficients of multiple groups of initial sensitive material samples are fitted according to the normal distribution to obtain the mean and variance of the comprehensive optimization coefficient Q of the material. The mean is the main reference parameter, and the smaller the value, the better the comprehensive performance of the material and the better the performance of the material; the variance reflects the degree of dispersion of the comprehensive optimization coefficients of multiple groups of samples, that is, stability. The present disclosure presets a preset stability condition (such as the upper limit value of the variance), and determines whether the actually calculated variance meets this condition. If it is satisfied, it indicates that the performance of these initial sensitive material samples is relatively stable, and the initial sensitive material samples can be determined as the target optimized sensitive material; if not, it indicates that the performance stability of these samples is insufficient, which may be caused by an improper initial element doping scheme. At this time, it is necessary to adjust the initial element doping scheme and return to step S101 to re-prepare and test new initial sensitive material samples until a target optimized sensitive material that meets the requirements is found.

[0108] In the method, device and medium for optimizing the sensitive material of the piezoelectric sensor of the nuclear reactor provided in the embodiments of the present disclosure, by preparing an initial sensitive material sample based on a sensitive material template and an initial element doping scheme, irradiating experiments and high-temperature performance tests are carried out on it, and the element doping scheme is dynamically adjusted in combination with the experimental results until a target optimized sensitive material with an average parameter change rate of the sample meeting the preset threshold is obtained, realizing the improvement of the piezoelectric constant of the new sensitive material in a high-temperature radiation environment. The piezoelectric sensor made of this sensitive material has a high sensitivity, improving the fault monitoring accuracy of key equipment in the nuclear reactor.

[0109] Those skilled in the art can understand that in the above method of the specific embodiment, the writing order of each step does not mean a strict execution order and constitutes any limitation to the implementation process. The specific execution order of each step should be determined according to its function and possible internal logic.

[0110] Based on the same inventive concept, the embodiments of the present disclosure also provide an optimization device for the sensitive material of a piezoelectric sensor in a nuclear reactor corresponding to the optimization method of the sensitive material of the piezoelectric sensor in a nuclear reactor. Since the principle of solving problems by the device in the embodiments of the present disclosure is similar to that of the above optimization method of the sensitive material of the piezoelectric sensor in a nuclear reactor in the embodiments of the present disclosure, the implementation of the device can refer to the implementation of the method, and the repeated parts will not be described again.

[0111] Refer to Figure 4 As shown in the figure, it is a schematic diagram of an optimization device 400 for the sensitive material of a piezoelectric sensor in a nuclear reactor provided by an embodiment of the present disclosure. The device includes:

[0112] A sample determination module 401, configured to execute step 1, and determine an initial sensitive material sample based on a sensitive material template and an initial element doping scheme;

[0113] A parameter determination module 402, configured to execute step 2, perform an irradiation experiment on the initial sensitive material sample, and determine irradiation parameters corresponding to the initial sensitive material sample based on the experimental results;

[0114] A material judgment module 403, configured to execute step 3, determine a sample average parameter change rate based on the irradiation parameters corresponding to a plurality of the initial sensitive material samples and the high-temperature performance parameters corresponding to the plurality of initial sensitive material samples after the irradiation experiment, and judge whether the sample average parameter change rate is less than a preset threshold; if so, determine the initial sensitive material sample as the target optimized sensitive material; if not, adjust the initial element doping scheme, and return to step 1.

[0115] In some possible embodiments, the parameter determination module 402 is further configured to:

[0116] Determine the piezoelectric coefficient of the initial sensitive material sample; and perform a breakdown test on a preset number of the initial sensitive material samples, and determine the breakdown rate of the initial sensitive material sample based on the experimental results;

[0117] Judge whether the piezoelectric coefficient of the initial sensitive material sample meets a preset piezoelectric condition, and judge whether the breakdown rate of the initial sensitive material sample meets a preset breakdown condition;

[0118] In the case that the piezoelectric coefficient of the initial sensitive material sample does not meet the preset piezoelectric condition, and / or, the breakdown rate of the initial sensitive material sample does not meet the preset breakdown condition, the initial sensitive material sample is unqualified, adjust the initial element doping scheme, and return to step 1 to re-determine the initial sensitive material sample.

[0119] In some possible embodiments, the parameter determination module 402 is further configured to:

[0120] Determine the high-temperature performance parameters corresponding to the initial sensitive material sample; wherein, the high-temperature performance parameters include the curves of the dielectric constant and dielectric loss value varying with temperature, the electromechanical coupling coefficient, and the macroscopic ferroelectric performance P-E curve.

[0121] In some possible embodiments, the irradiation parameter includes the maximum change rate of the piezoelectric coefficient; the parameter determination module 402 is specifically configured to:

[0122] Conduct an irradiation experiment on the initial sensitive material sample, and respectively test the piezoelectric coefficient of the initial sensitive material sample at multiple preset irradiation dose nodes until the cumulative irradiation dose reaches the target maximum cumulative dose;

[0123] Determine the maximum change rate of the piezoelectric coefficient corresponding to the initial sensitive material sample based on the piezoelectric coefficients of the initial sensitive material sample at different irradiation dose nodes.

[0124] In some possible embodiments, the average parameter change rate includes the average maximum change rate of the sample piezoelectric coefficient, the average maximum change rate of the sample dielectric temperature spectrum, the average maximum change rate of the sample electromechanical coupling coefficient, and the average maximum change rate of the sample ferroelectric performance; the material judgment module 403 is specifically configured to:

[0125] Determine the average maximum change rate of the sample piezoelectric coefficient based on the maximum change rates of the piezoelectric coefficients corresponding to multiple initial sensitive material samples;

[0126] Determine the high-temperature performance parameters corresponding to each of the initial sensitive material samples after the irradiation experiment;

[0127] Determine the average maximum change rate of the sample dielectric temperature spectrum based on the curves of the dielectric constant and dielectric loss value varying with temperature corresponding to the initial sensitive material sample and the curves of the dielectric constant and dielectric loss value varying with temperature corresponding to each of the initial sensitive material samples after the irradiation experiment;

[0128] Determine the average maximum change rate of the sample electromechanical coupling coefficient based on the electromechanical coupling coefficient corresponding to the initial sensitive material sample and the electromechanical coupling coefficients corresponding to each of the initial sensitive material samples after the irradiation experiment;

[0129] Determine the average maximum change rate of the sample ferroelectric performance based on the macroscopic ferroelectric performance P-E curve corresponding to the initial sensitive material sample and the macroscopic ferroelectric performance P-E curves corresponding to each of the initial sensitive material samples after the irradiation experiment.

[0130] In some possible embodiments, the material judgment module 403 is specifically configured to:

[0131] Determine the variance of the initial sensitive material sample based on the average maximum change rate of the piezoelectric coefficient of the sample, the average maximum change rate of the dielectric temperature spectrum of the sample, the average maximum change rate of the electromechanical coupling coefficient of the sample, and the average maximum change rate of the ferroelectric properties of the sample;

[0132] Determine whether the variance meets the preset stability condition; if it meets, determine the initial sensitive material sample as the target optimized sensitive material; if it does not meet, the initial sensitive material sample is unqualified, adjust the initial element doping scheme, and return to step 1 to re-determine the initial sensitive material sample.

[0133] In some possible embodiments, the sensitive material template includes Ca 1-x (NaBi) 0.5x Bi2Nb2O9 + y mol% LiNbO3; where 0 < x < 1 and y > 0.

[0134] Based on the same inventive concept, the embodiments of the present disclosure also provide a computer device. Referring to Figure 5 As shown, it is a schematic structural diagram of a computer device 500 provided by the embodiments of the present disclosure, including a processor 501, a memory 502, and a bus 503. Among them, the memory 502 is used to store execution instructions, including an internal memory 5021 and an external memory 5022; here, the internal memory 5021 is also called the main memory, which is used to temporarily store the operation data in the processor 501 and the data exchanged with the external memory 5022 such as a hard disk. The processor 501 exchanges data with the external memory 5022 through the internal memory 5021.

[0135] In the embodiments of the present application, the memory 502 is specifically used to store the application program code for executing the solution of the present application and is controlled by the processor 501 to execute. That is, when the computer device 500 runs, the processor 501 communicates with the memory 502 through the bus 503, so that the processor 501 executes the application program code stored in the memory 502, and then executes the method described in any of the foregoing embodiments.

[0136] Among them, the memory 502 can be, but is not limited to, a random access memory (Random Access Memory, RAM), a read-only memory (Read Only Memory, ROM), a programmable read-only memory (Programmable Read-Only Memory, PROM), an erasable programmable read-only memory (Erasable Programmable Read-Only Memory, EPROM), an electrically erasable programmable read-only memory (Electric Erasable Programmable Read-Only Memory, EEPROM), etc.

[0137] The processor 501 may be an integrated circuit chip with signal processing capabilities. The above-mentioned processor may be a general-purpose processor, including a Central Processing Unit (CPU), a Network Processor (NP), etc.; it may also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components. It can implement or execute the various methods, steps, and logic block diagrams disclosed in the embodiments of the present invention. The general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc.

[0138] It can be understood that the structure illustrated in the embodiments of the present application does not constitute a specific limitation on the computer device 500. In other embodiments of the present application, the computer device 500 may include more or fewer components than those illustrated, or combine certain components, or split certain components, or have different component arrangements. The illustrated components may be implemented in hardware, software, or a combination of software and hardware.

[0139] The embodiments of the present disclosure also provide a computer-readable storage medium, on which a computer program is stored. When the computer program is run by a processor, it executes the steps of the method for optimizing the piezoelectric sensor sensitive material in the nuclear reactor described in the above method embodiments. Among them, the storage medium may be a volatile or non-volatile computer-readable storage medium.

[0140] The embodiments of the present disclosure also provide a computer program product, which carries program code. The instructions included in the program code can be used to execute the steps of the method for optimizing the piezoelectric sensor sensitive material in the nuclear reactor described in the above method embodiments. For details, please refer to the above method embodiments and will not be elaborated here.

[0141] Among them, the above computer program product can be specifically implemented in a manner of hardware, software, or a combination thereof. In an optional embodiment, the computer program product is specifically embodied as a computer storage medium. In another optional embodiment, the computer program product is specifically embodied as a software product, such as a Software Development Kit (SDK), etc.

[0142] Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems and devices described above can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein. In several embodiments provided in the present disclosure, it should be understood that the disclosed systems and methods can be implemented in other ways. The device embodiments described above are merely illustrative. For example, the division of the units is only a logical function division, and there may be other division methods in actual implementation. For another example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the couplings or direct couplings or communication connections shown or discussed with each other can be through some communication interfaces, and the indirect couplings or communication connections of the devices or units can be in electrical, mechanical or other forms.

[0143] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0144] In addition, in each embodiment of the present disclosure, the functional units can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit.

[0145] If the functions are implemented in the form of software function units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium executable by a processor. Based on such an understanding, the technical solution of the present disclosure, in essence, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in each embodiment of the present disclosure. The foregoing storage medium includes: various media that can store program codes such as USB flash drives, mobile hard disks, read-only memories (ROM), random access memories (RAM), magnetic disks, or optical discs.

[0146] Finally, it should be noted that the above-described embodiments are only specific implementation manners of the present disclosure, used to illustrate the technical solutions of the present disclosure, rather than limiting it. The protection scope of the present disclosure is not limited thereto. Although the present disclosure has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that any person skilled in the technical field of the present disclosure can still modify the technical solutions recorded in the foregoing embodiments, or can easily think of changes, or perform equivalent replacements on some of the technical features; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present disclosure, and should all be covered by the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. An optimization method for the sensitive material of piezoelectric sensors in nuclear reactors, characterized in that Including: Step 1: Determine an initial sensitive material sample based on a sensitive material template and an initial element doping scheme; Step 2: Conduct an irradiation experiment on the initial sensitive material sample, and determine irradiation parameters corresponding to the initial sensitive material sample based on the experimental results; Step 3: Determine a sample average parameter change rate based on the irradiation parameters corresponding to multiple initial sensitive material samples and the high-temperature performance parameters corresponding to multiple initial sensitive material samples after the irradiation experiment, and determine whether the sample average parameter change rate is less than a preset threshold; If so, determine the initial sensitive material sample as the target optimized sensitive material; if not, adjust the initial element doping scheme and return to Step 1.

2. The method according to claim 1, characterized in that, Before conducting the irradiation experiment on the initial sensitive material sample, it includes: Determine the piezoelectric coefficient of the initial sensitive material sample; and conduct breakdown tests on a preset number of the initial sensitive material samples, and determine the breakdown rate of the initial sensitive material sample based on the experimental results; Determine whether the piezoelectric coefficient of the initial sensitive material sample meets a preset piezoelectric condition, and determine whether the breakdown rate of the initial sensitive material sample meets a preset breakdown condition; In the case where the piezoelectric coefficient of the initial sensitive material sample does not meet the preset piezoelectric condition, and / or the breakdown rate of the initial sensitive material sample does not meet the preset breakdown condition, the initial sensitive material sample is unqualified, adjust the initial element doping scheme and return to Step 1 to re-determine the initial sensitive material sample.

3. The method according to claim 1, characterized in that Before conducting the irradiation experiment on the initial sensitive material sample, it includes: Determine the high-temperature performance parameters corresponding to the initial sensitive material sample; wherein, the high-temperature performance parameters include the curves of the dielectric constant and dielectric loss value changing with temperature, the electromechanical coupling coefficient, and the macroscopic ferroelectric performance P-E curve.

4. The method according to claim 3, characterized in that The irradiation parameters include the maximum change rate of the piezoelectric coefficient; conducting the irradiation experiment on the initial sensitive material sample includes: Conduct an irradiation experiment on the initial sensitive material sample, and test the piezoelectric coefficient of the initial sensitive material sample at multiple preset irradiation dose nodes until the cumulative irradiation dose reaches the target maximum cumulative dose; Determine the maximum change rate of the piezoelectric coefficient corresponding to the initial sensitive material sample based on the piezoelectric coefficients of the initial sensitive material sample at different irradiation dose nodes.

5. The method according to claim 4, characterized in that The average parameter change rate includes the average maximum change rate of the sample piezoelectric coefficient, the average maximum change rate of the sample dielectric temperature spectrum, the average maximum change rate of the sample electromechanical coupling coefficient, and the average maximum change rate of the sample ferroelectric performance; determining the sample average parameter change rate based on the irradiation parameters corresponding to multiple initial sensitive material samples and the high-temperature performance parameters corresponding to multiple initial sensitive material samples after the irradiation experiment includes: Determine the average maximum change rate of the sample piezoelectric coefficient based on the maximum change rates of the piezoelectric coefficients corresponding to multiple initial sensitive material samples; Determine the high-temperature performance parameters corresponding to each initial sensitive material sample after the irradiation experiment; Based on the temperature change curves of the dielectric constant and dielectric loss values corresponding to the initial sensitive material sample and the temperature change curves of the dielectric constant and dielectric loss values corresponding to each of the initial sensitive material samples after the irradiation experiment, determine the average maximum change rate of the sample dielectric temperature spectrum; Based on the electromechanical coupling coefficient corresponding to the initial sensitive material sample and the electromechanical coupling coefficient corresponding to each of the initial sensitive material samples after the irradiation experiment, determine the average maximum change rate of the sample electromechanical coupling coefficient; Based on the macroscopic ferroelectric property P-E curve corresponding to the initial sensitive material sample and the macroscopic ferroelectric property P-E curve corresponding to each of the initial sensitive material samples after the irradiation experiment, determine the average maximum change rate of the sample ferroelectric property.

6. The method according to claim 5, wherein Said determining the initial sensitive material sample as the target optimized sensitive material includes: Determine the variance of the initial sensitive material sample based on the average maximum change rate of the sample piezoelectric coefficient, the average maximum change rate of the sample dielectric temperature spectrum, the average maximum change rate of the sample electromechanical coupling coefficient, and the average maximum change rate of the sample ferroelectric property; Judge whether the variance meets the preset stability condition; if it meets, determine the initial sensitive material sample as the target optimized sensitive material; if it does not meet, the initial sensitive material sample is unqualified, adjust the initial element doping scheme, and return to step 1 to re-determine the initial sensitive material sample.

7. The method according to any one of claims 1 to 6, characterized in that, The sensitive material template includes Ca 1-x (NaBi) 0.5x Bi2Nb2O9 + y mol% LiNbO3; where 0 < x < 1 and y > 0.

8. An optimization device for a piezoelectric sensor sensitive material in a nuclear reactor, characterized in that, Including: A sample determination module, configured to execute step 1 to determine an initial sensitive material sample based on a sensitive material template and an initial element doping scheme; A parameter determination module, configured to execute step 2 to perform an irradiation experiment on the initial sensitive material sample and determine the irradiation parameters corresponding to the initial sensitive material sample based on the experimental results; A material judgment module, configured to execute step 3 to determine the average parameter change rate of the sample based on the irradiation parameters corresponding to multiple initial sensitive material samples and the high-temperature performance parameters corresponding to multiple initial sensitive material samples after the irradiation experiment, and judge whether the average parameter change rate of the sample is less than a preset threshold; If so, determine the initial sensitive material sample as the target optimized sensitive material; if not, adjust the initial element doping scheme and return to step 1.

9. A storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the method according to any one of claims 1 to 7.

10. A computer device, comprising a storage medium, a processor, and a computer program stored on the storage medium and executable on the processor, characterized in that, When the processor executes the computer program, it implements the method according to any one of claims 1 to 7.

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