Cutting-up method of substrate structure

Abstract

The invention provides a cutting-up method of a substrate structure, relates to the technical field of semiconductor manufacturing, and aims to solve the problem that the cutting-up method in the prior art can cause cracks to extend towards the interior of a glass core plate, so that the quality of a cut glass substrate is influenced. The cutting-up method of the substrate structure comprises the following steps: obtaining the substrate structure which comprises a glass core plate, a dielectric layer and a removed stop layer and is positioned between the dielectric layer and the glass core plate; presetting a first cutting-up channel, wherein the projection of the first cutting-up channel is located in the removal stop layer; removing the dielectric layer in the first cutting channel to expose the glass core plate or removing the stop layer; corroding to remove the exposed removal stop layer so as to expose the glass core plate and obtain a processed substrate structure; presetting a second cutting-up channel in the first cutting-up channel, wherein the second cutting-up channel and the dielectric layer closest to the second cutting-up channel are distributed at intervals or abut against each other; the width of the second cutting-up channel is smaller than that of the first cutting-up channel; and cutting up the processed substrate structure along the second cutting-up channel to obtain a substrate sub-structure.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to a method for dicing a substrate structure. Background Art

[0002] With the development of artificial intelligence and high-performance computing, the chip size supporting computing power is constantly increasing, and the requirements for the substrate size are also rapidly rising. Compared with organic substrates, glass substrates have gradually become a more concerned solution due to their superior flatness, low coefficient of thermal expansion (CTE), high stiffness, and good electrical properties. However, as a brittle material, the strength of glass is extremely sensitive to defects, especially during the manufacturing process, especially during the dicing process, there is a very high risk of failure.

[0003] In the prior art, ABF with a certain thickness is provided on two opposite surfaces of a glass core board. The stress generated during the actual dicing process will cause cracks at the cutting edge of the glass core board, and the cracks will further extend into the glass core board along the length direction of the glass core board, thereby affecting the quality of the glass substrate obtained after segmentation. Summary of the Invention

[0004] The purpose of the present invention is to provide a method for dicing a substrate structure, which is used to reduce the probability of cracks extending into the glass core board and improve the quality of the structure obtained after segmentation.

[0005] In order to achieve the above purpose, the present invention provides the following technical solutions: The present invention provides a method for dicing a substrate structure. The method for dicing the substrate structure includes:

[0006] Obtain a substrate structure; the substrate structure includes a glass core board, a dielectric layer, and a removal stop layer; the glass core board includes a first surface and a second surface opposite to each other along its thickness direction; the dielectric layer is provided on the first surface and the second surface of the glass core board; the removal stop layer is provided on the first surface and / or the second surface of the glass core board, and the removal stop layer is located between the dielectric layer and the glass core board;

[0007] Preset a first dicing track extending along the direction from the first surface to the second surface on the substrate structure; along the direction from the first surface to the second surface, the projection of the first dicing track is located within the removal stop layer;

[0008] Process the substrate structure to remove the dielectric layer located in the first dicing track and expose the glass core board or the removal stop layer;

[0009] Use etching to remove the exposed removal stop layer to expose the glass core board and obtain a processed substrate structure;

[0010] A second scribing channel extending in the direction from the first surface to the second surface is preset on the substrate structure; the second scribing channel is located within the first scribing channel; the second scribing channel is spaced apart from or in contact with the dielectric layers on both sides of the second scribing channel and closest to it; in a direction perpendicular to the thickness of the glass core board, the width of the second scribing channel is smaller than the width of the first scribing channel.

[0011] The substrate structure is scribed along the second scribing channel to obtain a plurality of spaced-apart substrate sub-structures.

[0012] In the scribing method of the substrate structure provided by the present invention, since in the direction from the first surface to the second surface, the projection of the first scribing channel is located within the removal stop layer, and the removal stop layer is located between the dielectric layer and the glass core board. Therefore, most or all of the stress generated when removing the dielectric layer within the first scribing channel acts on the removal stop layer and the dielectric layers around the dielectric layer within the first scribing channel, and very little or no stress acts on the glass core board. Further, the exposed removal stop layer is removed by etching later, and the glass core board will not be affected during the process of etching the removal stop layer (for example, the glass core board will not be etched, and no stress will be applied to the glass core board). Still further, the substrate structure is scribed along the second scribing channel to obtain a plurality of spaced-apart substrate sub-structures; the second scribing channel is spaced apart from or in contact with the dielectric layers on both sides of the second scribing channel and closest to it, and in a direction perpendicular to the thickness of the glass core board, the width of the second scribing channel is smaller than the width of the first scribing channel. Taking the boundary line of the first scribing channel as the demarcation line, among them, the substrate sub-structure includes a substrate unit and a crack propagation unit distributed along its length direction. The substrate unit is the part for forming components normally in the later stage or for subsequent packaging, and the crack propagation unit is the area between the boundary line of the first scribing channel and the scribed edge of the substrate sub-structure. At this time, even if cracks are generated during the process of scribing the substrate structure along the second scribing channel, since the above crack propagation unit reserves space for the expansion of the cracks, only a small part of the cracks or no cracks will expand to the substrate unit, and at this time, the influence of the cracks on the substrate unit is very small or basically none. Based on this, the probability of cracks extending into the glass core board is reduced, and the quality of the structure (i.e., the substrate sub-structure) obtained after segmentation is improved.

[0013] In one implementation, the method of removing the dielectric layer within the first scribing channel includes: removing it with a soft knife or by laser; and / or, scribing the substrate structure along the second scribing channel to obtain a plurality of spaced-apart substrate sub-structures includes: scribing the substrate structure along the second scribing channel with a soft knife or by laser to obtain a plurality of spaced-apart substrate sub-structures.

[0014] In one implementation, removing the exposed removal stop layer by etching includes: removing the exposed removal stop layer by wet etching.

[0015] In one implementation, the difference between the coefficient of thermal expansion of the removal stop layer and that of the glass core board is less than the difference between the coefficient of thermal expansion of the dielectric layer and that of the glass core board.

[0016] In one implementation, the removal stop layer includes at least one or more of a copper removal stop layer, a zinc removal stop layer, a nickel removal stop layer, or a silver removal stop layer; the dielectric layer includes at least one or more of ABF, PI, or ABF-like.

[0017] In one implementation, along the direction perpendicular to the thickness of the glass core board, the maximum width of the removal stop layer is equal to the maximum width of the first scribe lane.

[0018] In one implementation, along the direction from the first surface to the second surface, the center line of the second scribe lane coincides with the center line of the first scribe lane.

[0019] In one implementation, the difference between the width of the second scribe lane and the width of the first scribe lane is greater than or equal to 10 microns and less than or equal to 300 microns.

[0020] In one implementation, along the direction perpendicular to the thickness of the glass core board, the removal stop layer includes: a first sub-layer disposed on the surface of the glass core board and a second sub-layer disposed on the side of the first sub-layer away from the glass core board; the width of the first sub-layer, the width of the second sub-layer, and the width of the first scribe lane are all equal; and / or, the width of the first sub-layer is greater than the width of the second sub-layer and the width of the second scribe lane respectively; the width of the first sub-layer is equal to the maximum width of the first scribe lane; and / or, the width of the first sub-layer is less than the width of the second sub-layer, and the width of the second scribe lane is less than or equal to the width of the first sub-layer; the width of the second sub-layer is equal to the width of the first scribe lane.

[0021] In one implementation, the glass core board has a through hole penetrating the glass core board along the direction from the first surface to the second surface; the substrate structure further includes: a conductive layer formed on the inner wall of the through hole; the conductive layer located in the through hole has pores; the pores penetrate the glass core board along the direction from the first surface to the second surface; a plugging material formed on the conductive layer and located in the pores; the dielectric layer close to the glass core board is disposed on the first surface and the second surface of the glass core board, and covers the conductive layer and the plugging material located in the opening area of the through hole; a circuit layer disposed on the side of the dielectric layer away from the glass core board; the dielectric layer and the circuit layer disposed in sequence along the direction away from the glass core board form a combined structure, and the substrate structure includes at least one combined structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation to the present invention. In the drawings:

[0023] Figure 1 It is a relationship diagram of the substrate structure and the substrate sub-structure in the embodiment of the present invention;

[0024] Figure 2 It is the C-C' cross-section of the substrate structure in Example 1 during the dicing process in the embodiment of the present invention Figure 1 ;

[0025] Figure 3 It is the C-C' cross-section of the substrate structure in Example 1 during the dicing process in the embodiment of the present invention Figure 2 ;

[0026] Figure 4 It is the C-C' cross-section of the substrate structure in Example 1 during the dicing process in the embodiment of the present invention Figure 3 ;

[0027] Figure 5 It is the C-C' cross-section of the substrate structure in Example 1 during the dicing process in the embodiment of the present invention Figure 4 ;

[0028] Figure 6 It is the C-C' cross-section of the substrate structure in Example 1 during the dicing process in the embodiment of the present invention Figure 5 ;

[0029] Figure 7 In the embodiment of the present invention Figure 6 An enlarged schematic diagram of a partial structure;

[0030] Figure 8 It is the C-C' cross-section of the substrate structure in Example 2 during the dicing process in the embodiment of the present invention Figure 1 ;

[0031] Figure 9 It is the C-C' cross-section of the substrate structure in Example 2 during the dicing process in the embodiment of the present invention Figure 2 ;

[0032] Figure 10 It is the C-C' cross-section of the substrate structure in Example 2 during the dicing process in the embodiment of the present invention Figure 3 ;

[0033] Figure 11 It is the C-C' cross-section of the substrate structure in Example 2 during the dicing process in the embodiment of the present invention Figure 4 ;

[0034] Figure 12 It is the C-C' cross-section of the substrate structure in Example 2 during the dicing process in the embodiment of the present invention Figure 5 ;

[0035] Figure 13 In the embodiment of the present inventionFigure 12 Enlarged schematic diagram of a partial structure;

[0036] Figure 14 C-C' cross-section of the substrate structure in Example 3 of the embodiments of the present invention during dicing; Figure 1 ;

[0037] Figure 15 C-C' cross-section of the substrate structure in Example 3 of the embodiments of the present invention during dicing; Figure 2 ;

[0038] Figure 16 C-C' cross-section of the substrate structure in Example 3 of the embodiments of the present invention during dicing; Figure 3 ;

[0039] Figure 17 C-C' cross-section of the substrate structure in Example 3 of the embodiments of the present invention during dicing; Figure 4 ;

[0040] Figure 18 C-C' cross-section of the substrate structure in Example 3 of the embodiments of the present invention during dicing; Figure 5 ;

[0041] Figure 19 In the embodiments of the present invention Figure 18 Enlarged schematic diagram of a partial structure;

[0042] Figure 20 C-C' cross-section of the substrate structure in Example 4 of the embodiments of the present invention during dicing; Figure 4 ;

[0043] Figure 21 C-C' cross-section of the substrate structure in Example 4 of the embodiments of the present invention during dicing; Figure 5 ;

[0044] Figure 22 In the embodiments of the present invention Figure 21 Enlarged schematic diagram of a partial structure;

[0045] Figure 23 C-C' cross-section of the substrate structure in Example 5 of the embodiments of the present invention during dicing; Figure 1 ;

[0046] Figure 24 C-C' cross-section of the substrate structure in Example 5 of the embodiments of the present invention during dicing; Figure 2 ;

[0047] Figure 25 C-C' cross-section of the substrate structure in Example 5 of the embodiments of the present invention during dicing; Figure 3 ;

[0048] Figure 26 The C-C' cross-section of the substrate structure in Example 5 of the embodiments of the present invention during dicing Figure 4 ;

[0049] Figure 27 The C-C' cross-section of the substrate structure in Example 5 of the embodiments of the present invention during dicing Figure 5 ;

[0050] Figure 28 In the embodiments of the present invention Figure 27 An enlarged schematic diagram of a partial structure;

[0051] Figure 29 A cross-sectional view of the substrate structure after dicing in the prior art.

[0052] Reference numerals:

[0053] 1 - Substrate structure, 10 - Glass core board, 11 - Dielectric layer; 12 - Removal stop layer, 120 - First sub-layer, 121 - Second sub-layer; 13 - Plug hole stack, 14 - Circuit layer; 15 - Substrate sub-structure, 150 - Substrate unit, 151 - Crack propagation unit, 152 - Stress concentration area, 153 - Stress release area, 154 - Crack; 2 - First dicing lane, 3 - Second dicing lane. Detailed implementation manners

[0054] For the convenience of clearly describing the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, terms such as "first" and "second" are used to distinguish identical items or similar items with basically the same functions and roles. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and do not limit their sequence. Those skilled in the art can understand that terms such as "first" and "second" do not limit the quantity and execution order, and terms such as "first" and "second" do not necessarily limit being different.

[0055] It should be noted that in the present invention, words such as "exemplary" or "for example" are used to represent examples, illustrations or explanations. Any embodiment or design solution described as "exemplary" or "for example" in the present invention should not be construed as being more preferred or having more advantages than other embodiments or design solutions. Exactly speaking, using words such as "exemplary" or "for example" aims to present relevant concepts in a specific manner.

[0056] In the present invention, "at least one" means one or more, and "a plurality" means two or more. "And / or" describes the relationship between related objects and indicates that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, or B exists alone, where A and B can be singular or plural. The character " / " generally represents an "or" relationship between the related objects before and after. "At least one (item)" or a similar expression refers to any combination of these items, including any combination of a single item or multiple items. For example, at least one (item) of a, b, or c can represent: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b, and c, where a, b, and c can be single or multiple.

[0057] Combined with the background art, during the scribing process, especially when the glass is cut by tools such as lasers and mechanical blades, due to reasons such as heat and mechanical stress, the edge of the glass substrate may show a reverse or retraction phenomenon in the direction opposite to the scribing direction. The edge area of the glass substrate after cutting may deform or slightly shrink due to temperature changes or mechanical forces during the cutting process, resulting in a retraction effect at the cutting edge. This effect is a factor that needs to be controlled during the cutting of glass because it may lead to a decrease in the accuracy of the cutting surface of the glass substrate, affect the cutting quality, and even may cause cracks or breakage of the glass substrate after scribing.

[0058] To solve the above technical problems, the present invention provides a scribing method for a substrate structure. Combined Figures 1 to 28 , the scribing method for the substrate structure includes:

[0059] Step 101: Refer to Figure 2 , obtain the substrate structure 1; the substrate structure 1 includes a glass core board 10, a dielectric layer 11, and a removal stop layer 12; the glass core board 10 includes a first surface and a second surface opposite to each other in its thickness direction; the dielectric layer 11 is disposed on the first surface and the second surface of the glass core board 10; the removal stop layer 12 is disposed on the first surface and / or the second surface of the glass core board 10, and the removal stop layer 12 is located between the dielectric layer 11 and the glass core board 10;

[0060] Step 102: Refer to Figure 3 , preset a first scribing track 2 extending in the direction from the first surface to the second surface on the substrate structure 1; along the direction from the first surface to the second surface, the projection of the first scribing track 2 is located within the removal stop layer 12;

[0061] It should be noted that regarding the order of Step 101 and Step 102, Step 101 can be executed first and then Step 102, or Step 102 can be executed first and then Step 101.

[0062] Exemplarily, when step 101 is executed first and then step 102, the substrate structure can be fabricated first, and then the position and size of the first scribe lane can be determined according to the position and size of the removed stop layer in the substrate structure.

[0063] When step 102 is executed first and then step 101, the number and size of the substrate sub-structures obtained by scribing can be preset in advance according to the size of the substrate structure to be fabricated. At this time, the first scribe lane can be basically determined. Then, the position and size of the removed stop layer in the substrate structure can be determined according to the position and size of the first scribe lane.

[0064] Step 103: Refer to Figure 4 , process the substrate structure 1 to remove the dielectric layer 11 located within the first scribe lane 2 and expose the glass core board 10 or the stop layer 12;

[0065] Exemplarily, a soft knife or laser is used to remove the dielectric layer 11 located within the first scribe lane 2 and on the stop layer 12, and expose the glass core board 10 or the stop layer 12;

[0066] Step 104: Refer to Figure 5 , use etching to remove the exposed stop layer 12 to expose the glass core board 10 and obtain the processed substrate structure; it should be noted that when the exposed stop layer 12 is removed by etching, the etchant will not damage the glass core board 10. In other words, in terms of material selection, the above stop layer 12 only allows the etchant to act on the stop layer 12 and will not corrode the glass core board 10.

[0067] Exemplarily, wet etching is used to remove the exposed stop layer 12 to expose the glass core board 10 and obtain the processed substrate structure.

[0068] As a possible implementation, the difference between the thermal expansion coefficient of the stop layer and the thermal expansion coefficient of the glass core board is less than the difference between the thermal expansion coefficient of the dielectric layer and the thermal expansion coefficient of the glass core board. That is, the thermal expansion coefficient of the stop layer is closer to the thermal expansion coefficient of the glass core board than the thermal expansion coefficient of the dielectric layer.

[0069] As can be seen from the background art section, in the prior art, ABF with a certain thickness is provided on two opposite surfaces of the glass core board. In particular, the cutting channels are entirely filled with ABF. According to common knowledge, the coefficient of thermal expansion of ABF is quite different from that of the glass core board. Therefore, during the formation of the substrate structure (such as electroplating and curing), due to temperature changes, a relatively large thermal stress is generated between the ABF and the glass core board, which in turn causes cracks in the glass core board, resulting in the failure of the glass core board. However, in the present application, the projection of the first cutting channel is located within the removal stop layer, and the removal stop layer is located between the dielectric layer and the glass core board. Since the dielectric layer within the first cutting channel does not directly contact the glass core board, and the coefficient of thermal expansion of the removal stop layer is closer to that of the glass core board than that of the dielectric layer. Therefore, during the formation of the substrate structure, the thermal stress generated between the removal stop layer and the glass core board is relatively small. Combining the foregoing description, the above removal stop layer can not only reduce the stress on the glass core board during the process of scribing and dividing the substrate structure, but also reduce the thermal stress on the glass core board during the formation of the substrate structure. Based on this, the probability of cracks extending into the glass core board is further reduced, and the quality of the structure obtained after division (i.e., the substrate sub-structure) is further improved.

[0070] In some embodiments, the dielectric layer includes at least one or more of ABF, PI (Polyimide, translated as: polyimide), or ABF-like materials. Among them, ABF is an interlayer insulating resin material for substrates developed by Ajinomoto Co., Inc. in Japan, and ABF-like materials are interlayer insulating resins with functions equivalent to ABF developed by other material suppliers. The above removal stop layer 12 includes at least one or more of a copper removal stop layer, a zinc removal stop layer, a nickel removal stop layer, or a silver removal stop layer.

[0071] Step 105: Refer to Figure 5 , a second cutting channel 3 extending in the direction from the first surface to the second surface is preset on the substrate structure 1; the second cutting channel 3 is located within the first cutting channel 2; the second cutting channel is spaced apart from or in contact with the dielectric layers on both sides of the second cutting channel and closest to it; along the direction perpendicular to the thickness of the glass core board 10, the width of the second cutting channel 3 is smaller than the width of the first cutting channel 2. The width direction of the second cutting channel 3 and the width direction of the first cutting channel 2 are both perpendicular to the thickness direction of the glass core board 10, that is, the Figure 5 A direction in

[0072] As a possible implementation, the difference between the width of the second cutting channel and the width of the first cutting channel is greater than or equal to 10 microns and less than or equal to 300 microns. Exemplarily, the difference can be 10 microns, 20 microns, 50 microns, 80 microns, 100 microns, 120 microns, 150 microns, 180 microns, 200 microns, 220 microns, 250 microns, 280 microns, or 300 microns, etc.

[0073] Step 106: Refer to Figure 6 , and scribe the processed substrate structure along the second scribing track 3 to obtain a plurality of spaced-apart substrate sub-structures 15. Exemplarily, a soft knife or a laser is used to scribe the processed substrate structure along the second scribing track 3 to obtain a plurality of spaced-apart substrate sub-structures 15.

[0074] Refer to Figure 7 , Figure 13 , Figure 19 , Figure 22 and Figure 28 , in the scribing method of the substrate structure provided by the embodiment of the present invention, since the projection of the first scribing track 2 is located within the removal stop layer 12 along the direction from the first surface to the second surface, and the removal stop layer 12 is located between the dielectric layer 11 and the glass core board 10; therefore, most or all of the stress generated when removing the dielectric layer 11 within the first scribing track 2 acts on the removal stop layer 12 and the dielectric layer 11 around the dielectric layer 11 within the first scribing track 2, and very little or no stress acts on the glass core board 10. Further, the exposed removal stop layer 12 is removed by etching later, and the glass core board 10 will not be affected during the process of etching the removal stop layer 12 (for example, the glass core board 10 will not be etched, and no stress effect will be generated on the glass core board 10). Still further, the processed substrate structure is scribed along the second scribing track 3 to obtain a plurality of spaced-apart substrate sub-structures 15; the second scribing track 3 is spaced apart from or abuts against the dielectric layer 11 on both sides of the second scribing track 3 and closest to it, and along the direction perpendicular to the thickness of the glass core board 10, the width of the second scribing track 3 is smaller than the width of the first scribing track 2. Taking the boundary line of the first scribing track 2 as the demarcation line, wherein, the substrate sub-structure 15 includes a substrate unit 150 and a crack propagation unit 151 distributed along its length direction, the substrate unit 150 is the part for normally forming components later or for subsequent packaging, and the crack propagation unit 151 is the area between the boundary line of the first scribing track 2 and the scribing edge of the substrate sub-structure 15. At this time, even if cracks 154 are generated during the process of scribing the processed substrate structure along the second scribing track 3, since the above crack propagation unit 151 reserves space for the expansion of the cracks 154, only a small part of the cracks 154 or no cracks 154 expand to the substrate unit 150, and at this time, the influence of the cracks 154 on the substrate unit 150 is very small or basically none. Based on this, the probability of the cracks 154 extending into the glass core board 10 is reduced, and the quality of the structure (i.e., the substrate sub-structure 15) obtained after segmentation is improved.

[0075] As a possible implementation, when the stop layer 12 is removed and only disposed on the first surface or the second surface of the glass core board 10, for a substrate sub-structure 15, it is divided into an upper part and a lower part along the length direction of the substrate sub-structure 15, and the upper part or the lower part has a crack propagation unit 151. At this time, even if a crack 154 is generated during the process of dicing the substrate structure along the second dicing track 3, since the above-mentioned crack propagation unit 151 reserves space for the expansion of the crack 154, only a small part of the crack 154 or no crack 154 expands to the upper part or the lower part of the substrate unit 150. Compared with the prior art where the crack 154 expands in the entire area of the substrate unit 150, the solution provided by the present application reduces the area (or area) where the crack 154 expands, and improves the quality of the structure (i.e., the substrate sub-structure 15) obtained after segmentation.

[0076] As another possible implementation, when the stop layer 12 removed is disposed on the first surface and the second surface of the glass core board 10, for a substrate sub-structure 15, it is divided into two parts along the length direction of the substrate sub-structure 15, and both parts have crack propagation units. At this time, the probability of the crack extending into the glass core board 10 can be further reduced to further improve the quality of the structure (i.e., the substrate sub-structure) obtained after segmentation.

[0077] As a possible implementation, along the direction perpendicular to the thickness of the glass core board, the maximum width of the removed stop layer is equal to the maximum width of the first dicing track.

[0078] For example, when both the removed stop layer and the first dicing track are irregular figures, along the direction perpendicular to the thickness of the glass core board, the maximum width of the removed stop layer is equal to the maximum width of the first dicing track. It should be noted that the maximum width of the removed stop layer here refers to the same removed stop layer, rather than the maximum width of the two removed stop layers included in a substrate structure; the same applies to the first dicing track.

[0079] As a possible implementation, along the direction from the first surface to the second surface, the center line of the second dicing track 3 coincides with the center line of the first dicing track 2.

[0080] When along the direction from the first surface to the second surface, the center line of the second dicing track 3 coincides with the center line of the first dicing track 2, the structures on both sides of the second dicing track 3 are evenly stressed, and the sizes of the crack propagation units 151 included in the two substrate sub-structures 15 obtained by dicing are basically equal or equal, so as to reserve sufficient space for the expansion of the crack 154, thereby ensuring the quality and reliability of the two substrate sub-structures.

[0081] See Figure 29, in the prior art, in the substrate structure 1, the dielectric layer 11 covers the glass core board 10. During actual dicing, the soft knife directly dices the dielectric layer 11 and the glass core board 10 along the direction from the first surface to the second surface of the glass core board 10 to obtain the separated substrate sub-structure 15. During this process, there is a stress concentration at the dicing corner (such as the stress concentration area 152 shown in Figure 29 ), and this stress cannot be released outward because there is a dielectric layer 11 above the glass core board 10, so this stress will be released into the interior of the glass core board 10, which will cause cracks 154 in the glass core board 10 and affect its reliability.

[0082] See Figure 7 , Figure 13 , Figure 19 and Figure 28 , in the present application, when the second dicing track 3 is spaced apart from the dielectric layer 11 located on both sides of the second dicing track and closest to it, there is no dielectric layer 11 closely attached to the glass core board 10 above at least a part of the glass core board 10 close to the second dicing track. Therefore, during the dicing process, even if there is stress concentration at the corner, or even if the corner breaks, it does not affect the reliability of the substrate unit 150 included in the substrate sub-structure 15, and thus the reliability of the substrate sub-structure 15 can be ensured. That is, the stress concentration area 152 shown in the prior art Figure 29 becomes the stress release area 153 shown in the present application Figure 7 , Figure 13 , Figure 19 and Figure 28 , thereby avoiding the problem of stress concentration generating cracks 154 inside the glass core board 10. Further, when the second dicing track 3 is spaced apart from the dielectric layer 11, the probability of delamination and cracking of the dielectric layer 11 and the glass core board 10 can be reduced.

[0083] As a possible implementation, see Figure 2 , the above-mentioned glass core board 10 has through holes penetrating the glass core board 10 along the direction from the first surface to the second surface. The substrate structure 1 may further include: a conductive layer, a via filling material, and a circuit layer 14. The conductive layer is formed on the inner wall of the through hole, and the conductive layer located in the through hole has pores, and the pores penetrate the glass core board 10 along the direction from the first surface to the second surface. The via filling material is formed on the conductive layer and located in the pores. The dielectric layer 11 close to the glass core board 10 is disposed on the first surface and the second surface of the glass core board 10, and covers the conductive layer and the via filling material located in the opening area of the through hole. The circuit layer 14 is disposed on the surface of the dielectric layer 11 away from the glass core board 10, and the circuit layer is electrically connected to the conductive layer; the dielectric layer 11 and the circuit layer 14 sequentially disposed along the direction away from the glass core board 10 form a combined structure, and the substrate structure 1 includes at least one combined structure.

[0084] Exemplarily, the above through-hole is a TGV (Through-Glass Via) hole.

[0085] The material of the conductive layer is not limited to metals (such as copper), and can also be other materials that meet the actual requirements.

[0086] The size, shape, etc. of the pores only need to meet the actual requirements, and no specific limitations are made here.

[0087] As a possible implementation, the plugging material can be a material with a coefficient of thermal expansion matching that of other parts in the substrate structure, such as a high-temperature resistant resin material. In this way, during the subsequent high-temperature lamination process of manufacturing the substrate structure, it can be ensured that the plugging material will not cause the board to burst due to mismatched expansion coefficients, and avoid problems that affect reliability such as the metal lines on the surface of the plugging material bursting and causing an open circuit. For a two-layer circuit board, since high-temperature lamination is not required, solder mask green oil with a relatively large coefficient of thermal expansion can be used as the plugging material. It should be understood that the specific material of the plugging material can also be adjusted according to the actual requirements of the prepared substrate structure. As a possible implementation, the above plugging material is a dry film type plugging resin material, such as the resin of ABF or the resin of RCC.

[0088] As another possible implementation, the above plugging material can also be a conductive material, such as a conductive metal. The above conductive metal can be copper, tungsten, titanium, etc. Or, the material of the plugging material is the same as that of the conductive layer, and in this case, a structure is formed inside the through-hole. It should be noted that for the convenience of identification in the drawings, the conductive layer and the plugging material are combined into one structure and defined as the plugging laminate 13.

[0089] The above circuit layer can include an inner circuit layer and an outer circuit layer. As for its specific division and structure, no detailed description is made here, as long as it can meet the actual requirements.

[0090] As a possible implementation, after the dielectric layer covers the conductive layer and the plugging material in the through-hole opening area, in order to realize the electrical connection between the circuit layer and the conductive layer, a communication hole is opened in the dielectric layer, and the communication hole penetrates to the conductive layer at the through-hole. Then, a conductive material is filled in the communication hole to form a connector electrically connected to the conductive layer. One end of the connector is electrically connected to the circuit layer, and the other end is electrically connected to the conductive layer to ensure the electrical connection and conduction of the circuit layers on both sides of the substrate structure.

[0091] The following describes the division method of the substrate structure by taking multiple cases as examples. It should be noted that the following description is only for understanding and not for specific limitation.

[0092] Example 1: Refer to Figures 2 to 7 , step 101: Obtain substrate structure 1;

[0093] Refer to Figure 2, the substrate structure 1 includes a glass core board 10, a dielectric layer 11, and a removal stop layer 12; the glass core board 10 includes a first surface and a second surface opposite to each other along its thickness direction; the dielectric layer 11 is disposed on the first surface and the second surface of the glass core board 10; the removal stop layer 12 is disposed on the first surface and the second surface of the glass core board 10, and the removal stop layer 12 is located between the dielectric layer 11 and the glass core board 10. Among them, along the direction perpendicular to the thickness of the glass core board 10, the removal stop layer 12 includes: a first sub-layer 120 disposed on the surface of the glass core board 10 and a second sub-layer 121 disposed on the surface of the first sub-layer 120 away from the glass core board 10, and the width of the first sub-layer 120 is equal to the width of the second sub-layer 121. That is, the cross-sectional shape of the removal stop layer 12 is a rectangle. The width direction of the first sub-layer 120 and the width direction of the second sub-layer 121 are both perpendicular to the thickness direction of the glass core board 10, that is, the Figure 2 A direction in []. It should be noted that since the width of the first sub-layer 120 is equal to the width of the second sub-layer 121, the two layers are not distinguished in the [] Figures 2 to 7 and are labeled as the removal stop layer 12.

[0094] Step 102: Refer to Figure 3 , a first scribe line 2 extending in the direction from the first surface to the second surface is preset on the substrate structure 1; along the direction from the first surface to the second surface, the width of the first scribe line 2 is equal to the width of the removal stop layer 12. The cross-sectional shape of the above-mentioned first scribe line 2 is a rectangle.

[0095] When the width of the first scribe line 2 is equal to the width of the removal stop layer 12, the position and size of the removal stop layer 12 limit the position and size of the first scribe line 2. During the actual process of removing the dielectric layer 11 located in the first scribe line 2, the accuracy of the removal can be ensured.

[0096] Step 103: Refer to Figure 4 , use a soft knife to remove the dielectric layer 11 located in the first scribe line 2 and on the removal stop layer 12, and expose the removal stop layer 12.

[0097] Step 104: Refer to Figure 5 , use wet etching to remove the exposed removal stop layer 12 to expose the glass core board 10 and obtain the processed substrate structure.

[0098] Step 105: Refer to Figure 5, a second scribing channel 3 extending in the direction from the first surface to the second surface is preset on the substrate structure 1, and the second scribing channel 3 is located within the first scribing channel 2. Along the direction perpendicular to the thickness of the glass core board, the difference between the width of the second scribing channel 3 and the width of the first scribing channel 2 is greater than or equal to 10 microns and less than or equal to 300 microns. Further, along the direction from the first surface to the second surface, the center line of the second scribing channel 3 coincides with the center line of the first scribing channel 2. At this time, the second scribing channel 3 must be spaced apart from the dielectric layers 11 located on both sides of the second scribing channel and closest to it.

[0099] Step 106: Refer to Figure 6 , and use a soft knife to scribe the substrate structure along the second scribing channel 3 to obtain a plurality of spaced-apart substrate sub-structures 15.

[0100] Refer to Figure 7 , taking the boundary line of the first scribing channel 2 as the dividing line, wherein the substrate sub-structure 15 includes a substrate unit 150 and a crack propagation unit 151 distributed along its length direction. The substrate unit 150 is the part for forming components normally in the later stage or for subsequent packaging, and the crack propagation unit 151 is the area between the boundary line of the first scribing channel 2 and the scribed edge of the substrate sub-structure 15. At this time, even if cracks 154 are generated during the process of scribing the substrate structure along the second scribing channel 3, since the above-mentioned crack propagation unit 151 reserves space for the expansion of the cracks 154, only a small part of the cracks 154 or no cracks 154 extend to the substrate unit 150. Based on this, the probability of the cracks 154 extending into the glass core board 10 is reduced, and the quality of the structure obtained after segmentation (i.e., the substrate sub-structure 15) is improved. Further, there is no dielectric layer 11 closely attached to the glass core board 10 above the glass core board 10 within the crack propagation unit 151. Therefore, during the scribing process, even if there is stress concentration at the corners, and even if the corners break, it does not affect the reliability of the substrate unit 150 included in the substrate sub-structure 15, and thus the reliability of the substrate sub-structure 15 can be ensured. That is, the stress concentration region 152 shown in the prior art Figure 29 becomes the stress release region 153 shown in this application Figure 7 , thereby avoiding the problem of stress concentration generating cracks 154 inside the glass core board 10. Further, when scribing after removing the dielectric layer 11 in contact with the glass core board 10 on the first scribing channel 2, the probability of delamination and cracking between the dielectric layer 11 and the glass core board 10 can be reduced.

[0101] Example two: Refer to Figures 8 to 13 , step 101: Obtain the substrate structure 1;

[0102] Refer to Figure 8, the substrate structure 1 includes a glass core board 10, a dielectric layer 11, and a removal stop layer 12; the glass core board 10 includes a first surface and a second surface opposite to each other along its thickness direction; the dielectric layer 11 is disposed on the first surface and the second surface of the glass core board 10; the removal stop layer 12 is disposed on the first surface and the second surface of the glass core board 10, and the removal stop layer 12 is located between the dielectric layer 11 and the glass core board 10. Among them, along the direction perpendicular to the thickness of the glass core board 10, the removal stop layer 12 includes: a first sub-layer 120 disposed on the surface of the glass core board 10 and a second sub-layer 121 disposed on the side of the first sub-layer 120 away from the glass core board 10, and the width of the first sub-layer 120 is greater than the width of the second sub-layer 121. The width directions of the first sub-layer 120 and the second sub-layer 121 are both perpendicular to the thickness direction of the glass core board 10, that is, the attached Figure 8 in the A direction in

[0103] Step 102: Refer to Figure 9 , a first scribe line 2 extending in the direction from the first surface to the second surface is preset on the substrate structure 1; along the direction from the first surface to the second surface, the maximum width of the first scribe line 2 is equal to the width of the first sub-layer 120. For example, the cross-section of the structure formed by the removal stop layer 12 and the first scribe line 2 disposed on a single surface of the glass core board 10 is rectangular.

[0104] Step 103: Refer to Figure 10 , use a soft knife to remove the dielectric layer 11 located in the first scribe line 2 and on the removal stop layer 12, and expose the removal stop layer 12.

[0105] Step 104: Refer to Figure 11 , use wet etching to remove the exposed removal stop layer 12 to expose the glass core board 10 and obtain the processed substrate structure.

[0106] Step 105: Refer to Figure 11 , a second scribe line 3 extending in the direction from the first surface to the second surface is preset on the substrate structure 1, and the second scribe line 3 is located within the first scribe line 2. The difference between the width of the second scribe line 3 and the width of the first scribe line 2 is greater than or equal to 10 microns and less than or equal to 300 microns. Further, along the direction from the first surface to the second surface, the center line of the second scribe line 3 coincides with the center line of the first scribe line 2. At this time, the second scribe line 3 must be spaced apart from the dielectric layer 11 located on both sides of the second scribe line 3 and closest to it. Further, combining the foregoing, the width of the first sub-layer 120 is greater than the width of the second scribe line 3.

[0107] Step 106: Refer to Figure 12 , use a soft knife to scribe the processed substrate structure along the second scribe line 3 to obtain a plurality of spaced-apart substrate sub-structures 15.

[0108] Refer toFigure 13 , taking the boundary line of the first scribing channel 2 as the demarcation line, wherein the substrate sub-structure 15 includes substrate units 150 and crack propagation units 151 distributed along its length direction. The substrate units 150 are the parts for forming components normally in the later stage or for subsequent packaging, and the crack propagation units 151 are the regions between the boundary line of the first scribing channel 2 and the scribing edge of the substrate sub-structure 15. At this time, even if cracks 154 are generated during the scribing process of the substrate structure along the second scribing channel 3, since the above-mentioned crack propagation units 151 reserve space for the expansion of the cracks 154, only a small part of the cracks 154 or no cracks 154 expand into the substrate units 150. Based on this, the probability of the cracks 154 extending into the glass core board 10 is reduced, and the quality of the structure obtained after segmentation (i.e., the substrate sub-structure 15) is improved. Further, there is no dielectric layer 11 closely attached to the glass core board 10 above the glass core board 10 within the crack propagation units 151. Therefore, during the scribing process, even if there is stress concentration at the corners, or even if the corners are chipped, it does not affect the reliability of the substrate units 150 included in the substrate sub-structure 15, and thus the reliability of the substrate sub-structure 15 can be ensured. That is, the stress concentration region 152 shown in the prior art Figure 1 becomes the stress release region 153 shown in the present application Figure 13 , thereby avoiding the problem of cracks 154 being generated in the glass core board 10 due to stress concentration. Further, when scribing after removing the dielectric layer 11 in contact with the glass core board 10 on the first scribing channel 2, the probability of delamination and cracking between the dielectric layer 11 and the glass core board 10 can be reduced.

[0109] Example 3: Refer to Figures 14 to 19 , step 101: Obtain the substrate structure 1;

[0110] Refer to Figure 14 , the substrate structure 1 includes a glass core board 10, a dielectric layer 11, and a removal stop layer 12; the glass core board 10 includes a first surface and a second surface opposite to each other in its thickness direction; the dielectric layer 11 is disposed on the first surface and the second surface of the glass core board 10; the removal stop layer 12 is disposed on the first surface and the second surface of the glass core board 10, and the removal stop layer 12 is located between the dielectric layer 11 and the glass core board 10. Among them, along the direction perpendicular to the thickness of the glass core board 10, the removal stop layer 12 includes: a first sub-layer 120 disposed on the surface of the glass core board 10 and a second sub-layer 121 disposed on the surface of the first sub-layer 120 away from the glass core board 10, and the width of the first sub-layer 120 is smaller than the width of the second sub-layer 121. The width directions of both the first sub-layer 120 and the second sub-layer 121 are perpendicular to the thickness direction of the glass core board 10, that is, the Figure 14 A direction in

[0111] Step 102: Refer toFigure 15 , a first scribe line 2 extending in the direction from the first surface to the second surface is preset on the substrate structure 1; along the direction from the first surface to the second surface, the width of the first scribe line 2 is equal to the width of the second sub-layer 121. The cross-sectional shape of the first scribe line 2 is a rectangle.

[0112] Step 103: Refer to Figure 16 , a soft knife is used to remove the dielectric layer 11 located within the first scribe line 2 and on the removal stop layer 12, and the removal stop layer 12 is exposed.

[0113] Step 104: Refer to Figure 17 , wet etching is used to remove the exposed removal stop layer 12 to expose the glass core board 10 and obtain the processed substrate structure.

[0114] Step 105: Refer to Figure 17 , a second scribe line 3 extending in the direction from the first surface to the second surface is preset on the substrate structure 1, and the second scribe line 3 is located within the first scribe line 2. The difference between the width of the second scribe line 3 and the width of the first scribe line 2 is greater than or equal to 10 micrometers and less than or equal to 300 micrometers. Further, along the direction from the first surface to the second surface, the center line of the second scribe line 3 coincides with the center line of the first scribe line 2. Still further, the width of the second scribe line 3 is less than the width of the first sub-layer 120. At this time, the second scribe line 3 and the dielectric layers 11 located on both sides of the second scribe line and closest to it are spaced apart.

[0115] Step 106: Refer to Figure 18 , a soft knife is used to scribe the processed substrate structure along the second scribe line 3 to obtain a plurality of spaced-apart substrate sub-structures 15.

[0116] Refer to Figure 19, taking the boundary line of the first scribe lane 2 as the demarcation line, wherein the substrate sub-structure 15 includes substrate units 150 and crack propagation units 151 distributed along its length direction. The substrate units 150 are the parts for forming components normally in the later stage or for subsequent packaging, and the crack propagation units 151 are the regions between the boundary line of the first scribe lane 2 and the scribe edge of the substrate sub-structure 15. At this time, even if cracks 154 are generated during the process of scribing the substrate structure along the second scribe lane 3, since the above-mentioned crack propagation units 151 reserve space for the expansion of the cracks 154, only a small part of the cracks 154 or no cracks 154 expand into the substrate units 150. Based on this, the probability of the cracks 154 extending into the glass core board 10 is reduced, and the quality of the structure obtained after segmentation (i.e., the substrate sub-structure 15) is improved. Further, in the glass core board 10 located in the crack propagation unit 151, there is no dielectric layer 11 closely attached to the glass core board 10 above a partial area near the scribe edge. Therefore, during the scribing process, even if there is stress concentration at the corners, and even if the corners are chipped, it does not affect the reliability of the substrate units 150 included in the substrate sub-structure 15, and thus the reliability of the substrate sub-structure 15 can be ensured. That is, the stress concentration region 152 shown in the prior art Figure 1 becomes the stress release region 153 shown in the present application Figure 19 , thereby avoiding the problem of stress concentration generating cracks 154 inside the glass core board 10. Further, when scribing after removing the dielectric layer 11 in contact with the glass core board 10 on the first scribe lane 2, the probability of delamination and cracking between the dielectric layer 11 and the glass core board 10 can be reduced.

[0117] Example 4: Steps 101 to 104 in Example 4 are the same as those in Example 3, and the differences are as follows:

[0118] Step 105: Refer to Figure 20 , a second scribe lane 3 extending in the direction from the first surface to the second surface is preset on the substrate structure 1, and the second scribe lane 3 is located inside the first scribe lane 2. The difference between the width of the second scribe lane 3 and the width of the first scribe lane 2 is greater than or equal to 10 microns and less than or equal to 300 microns. Further, along the direction from the first surface to the second surface, the center line of the second scribe lane 3 coincides with the center line of the first scribe lane 2. Still further, the width of the second scribe lane 3 is equal to the width of the first sub-layer 120. At this time, the second scribe lane 3 abuts against the dielectric layers 11 located on both sides of the second scribe lane and closest to it.

[0119] Step 106: Refer to Figure 21 , use a soft knife to scribe the substrate structure along the second scribe lane 3 to obtain a plurality of spaced-apart substrate sub-structures 15.

[0120] Refer to Figure 22, taking the boundary line of the first scribing lane 2 as the demarcation line, wherein the substrate sub-structure 15 includes substrate units 150 and crack propagation units 151 distributed along its length direction. The substrate units 150 are the parts for forming components normally in the later stage or for subsequent packaging, and the crack propagation units 151 are the regions between the boundary line of the first scribing lane 2 and the scribing edge of the substrate sub-structure 15. At this time, even if cracks 154 are generated during the scribing process of the substrate structure along the second scribing lane 3, since the above-mentioned crack propagation units 151 reserve space for the expansion of the cracks 154, only a small part of the cracks 154 or no cracks 154 expand into the substrate units 150. Based on this, the probability of the cracks 154 extending into the glass core board 10 is reduced, and the quality of the structure (i.e., the substrate sub-structure 15) obtained after segmentation is improved.

[0121] Example 5: Refer to Figures 23 to 28 , step 101: Obtain the substrate structure 1;

[0122] Refer to Figure 23 , the substrate structure 1 includes a glass core board 10, a dielectric layer 11, and a removal stop layer 12; the glass core board 10 includes a first surface and a second surface opposite to each other along its thickness direction; the dielectric layer 11 is disposed on the first surface and the second surface of the glass core board 10; the removal stop layer 12 is disposed on the first surface and the second surface of the glass core board 10, and the removal stop layer 12 is located between the dielectric layer 11 and the glass core board 10. Wherein, along the direction perpendicular to the thickness of the glass core board 10, the removal stop layer 12 includes: a first sub-layer 120 disposed on the surface of the glass core board 10 and a second sub-layer 121 disposed on the surface of the first sub-layer 120 away from the glass core board 10. The width of the first sub-layer 120 is equal to the width of the second sub-layer 121. That is, the cross-sectional shape of the removal stop layer 12 is a rectangle. The width directions of both the first sub-layer 120 and the second sub-layer 121 are perpendicular to the thickness direction of the glass core board 10, that is, the Figure 23 A direction in the attached Figures 23 to 28 . It should be noted that since the width of the first sub-layer 120 is equal to the width of the second sub-layer 121, the two layers are not distinguished in the attached

[0123] Step 102: Refer to Figure 24 , preset a first scribing lane 2 extending along the direction from the first surface to the second surface on the substrate structure 1; along the direction from the first surface to the second surface, the width of the first scribing lane 2 is smaller than the width of the removal stop layer 12. The cross-sectional shape of the above-mentioned first scribing lane 2 is a rectangle.

[0124] Step 103: Refer to Figure 25 , use a soft knife to remove the dielectric layer 11 located in the first scribing lane 2 and on the removal stop layer 12, and expose the removal stop layer 12.

[0125] Step 104: Refer to Figure 26 , and remove the exposed removal stop layer 12 by wet etching to expose the glass core board 10 and obtain the processed substrate structure.

[0126] Step 105: Refer to Figure 26 , preset a second scribe line 3 extending along the direction from the first surface to the second surface on the substrate structure 1, and the second scribe line 3 is located within the first scribe line 2. The difference between the width of the second scribe line 3 and the width of the first scribe line 2 is greater than or equal to 10 micrometers and less than or equal to 300 micrometers. Further, along the direction from the first surface to the second surface, the center line of the second scribe line 3 coincides with the center line of the first scribe line 2. At this time, the second scribe line 3 and the dielectric layers 11 located on both sides of the second scribe line and closest to it are spaced apart.

[0127] Step 106: Refer to Figure 27 , and scribe the processed substrate structure along the second scribe line 3 with a soft knife to obtain a plurality of spaced-apart substrate sub-structures 15.

[0128] Refer to Figure 28 , taking the boundary line of the first scribe line 2 as the demarcation line. Among them, the substrate sub-structure 15 includes a substrate unit 150 and a crack propagation unit 151 distributed along its length direction. The substrate unit 150 is the part for forming components normally in the later stage or for subsequent packaging, and the crack propagation unit 151 is the area between the boundary line of the first scribe line 2 and the scribe edge of the substrate sub-structure 15. At this time, even if a crack 154 is generated during the process of scribing the processed substrate structure along the second scribe line 3, since the above crack propagation unit 151 reserves space for the expansion of the crack 154, only a small part of the crack 154 or no crack 154 extends to the substrate unit 150. Based on this, the probability of the crack 154 extending into the glass core board 10 is reduced, and the quality of the structure (i.e., the substrate sub-structure 15) obtained after segmentation is improved. Further, there is no dielectric layer 11 closely attached to the glass core board 10 above the glass core board 10 within the crack propagation unit 151. Therefore, during the scribing process, even if there is stress concentration at the corner, and even if the corner breaks, it does not affect the reliability of the substrate unit 150 included in the substrate sub-structure 15, and thus the reliability of the substrate sub-structure 15 can be ensured. That is, the stress concentration area 152 shown in the prior art Figure 1 becomes the stress release area 153 shown in the present application Figure 28 , thereby avoiding the problem of stress concentration generating cracks 154 inside the glass core board 10. Further, when scribing after removing the dielectric layer 11 in contact with the glass core board 10 on the first scribe line 2, the probability of delamination and cracking between the dielectric layer 11 and the glass core board 10 can be reduced.

[0129] It should be noted that the above five examples are only for explanation and are not all embodiments of the present application.

[0130] Although the present invention has been described in connection with various embodiments, however, in the process of implementing the claimed invention, those skilled in the art can understand and achieve other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "one" does not exclude a plurality. A single processor or other unit may implement several functions recited in the claims. Certain measures are recited in mutually different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0131] Although the present invention has been described in connection with specific features and their embodiments, it is obvious that various modifications and combinations can be made without departing from the spirit and scope of the present invention. Accordingly, the present specification and the drawings are merely exemplary illustrations of the invention defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the present invention. Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention is also intended to include these changes and modifications.

Claims

1. A dicing method for a substrate structure, characterized in that, Including: Obtaining a substrate structure; the substrate structure includes a glass core board, a dielectric layer, and a removal stop layer; the glass core board includes a first surface and a second surface opposite to each other in its thickness direction; the dielectric layer is disposed on the first surface and the second surface of the glass core board; the removal stop layer is disposed on the first surface and / or the second surface of the glass core board, and the removal stop layer is located between the dielectric layer and the glass core board; Presetting a first scribe line extending in the direction from the first surface to the second surface on the substrate structure; in the direction from the first surface to the second surface, the projection of the first scribe line is located within the removal stop layer; Processing the substrate structure to remove the dielectric layer within the first scribe line and expose the glass core board or the removal stop layer; Using etching to remove the exposed removal stop layer to expose the glass core board and obtain a processed substrate structure; Presetting a second scribe line extending in the direction from the first surface to the second surface on the substrate structure; the second scribe line is located within the first scribe line; the second scribe line is spaced apart from or abuts against the dielectric layers on both sides of the second scribe line and closest to it; in the direction perpendicular to the thickness of the glass core board, the width of the second scribe line is smaller than the width of the first scribe line; Scribing the processed substrate structure along the second scribe line to obtain a plurality of spaced-apart substrate sub-structures.

2. The dicing method of the substrate structure according to claim 1, wherein The method of removing the dielectric layer within the first scribe line includes: removing it with a soft knife or laser; And / or, scribing the processed substrate structure along the second scribe line to obtain a plurality of spaced-apart substrate sub-structures includes: scribing the processed substrate structure along the second scribe line with a soft knife or laser to obtain a plurality of spaced-apart substrate sub-structures.

3. The scribing method of the substrate structure according to claim 1, characterized in that, Using etching to remove the exposed removal stop layer includes: using wet etching to remove the exposed removal stop layer.

4. The dicing method of the substrate structure according to claim 1, wherein The difference between the thermal expansion coefficient of the removal stop layer and the thermal expansion coefficient of the glass core board is smaller than the difference between the thermal expansion coefficient of the dielectric layer and the thermal expansion coefficient of the glass core board.

5. The dicing method of the substrate structure according to claim 1, wherein, The removal stop layer includes at least one or more of a copper removal stop layer, a zinc removal stop layer, a nickel removal stop layer, or a silver removal stop layer; The dielectric layer includes at least one or more of ABF, PI, or ABF-like; 6. The dicing method of the substrate structure according to claim 1, characterized in that, In the direction perpendicular to the thickness of the glass core board, the maximum width of the removal stop layer is equal to the maximum width of the first scribe line.

7. The dicing method of the substrate structure according to claim 1, characterized in that In the direction from the first surface to the second surface, the center line of the second scribe line coincides with the center line of the first scribe line.

8. The dicing method of the substrate structure according to claim 1, characterized in that The difference between the width of the second scribe line and the width of the first scribe line is greater than or equal to 10 microns and less than or equal to 300 microns.

9. The dicing method of the substrate structure according to any one of claims 1 to 8, characterized in that, In the direction perpendicular to the thickness of the glass core board, the removal stop layer includes: a first sub-layer disposed on the surface of the glass core board and a second sub-layer disposed on the surface of the first sub-layer away from the glass core board; The width of the first sub-layer, the width of the second sub-layer, and the width of the first scribe line are all equal; And / or, the width of the first sub-layer is respectively greater than the width of the second sub-layer and the width of the second scribe lane; the width of the first sub-layer is equal to the maximum width of the first scribe lane; And / or, the width of the first sub-layer is less than the width of the second sub-layer, the width of the second scribe lane is less than or equal to the width of the first sub-layer; the width of the second sub-layer is equal to the width of the first scribe lane.

10. The scribing method of the substrate structure according to claim 1, characterized in that, The glass core board has a through hole penetrating the glass core board in the direction from the first surface to the second surface; The substrate structure further includes: A conductive layer formed on the inner wall of the through hole; the conductive layer located in the through hole has pores; the pores penetrate the glass core board in the direction from the first surface to the second surface; A plugging material formed on the conductive layer and located in the pores; The dielectric layer adjacent to the glass core board is disposed on the first surface and the second surface of the glass core board, and covers the conductive layer and the plugging material located in the opening area of the through hole; A circuit layer disposed on the surface of the dielectric layer away from the glass core board; the circuit layer is electrically connected to the conductive layer; The dielectric layer and the circuit layer sequentially disposed in the direction away from the glass core board form a combined structure, and the substrate structure includes at least one such combined structure.

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