Wafer measurement data combination method, device, equipment and medium

By combining the measurement data at different stages in the micro-light emitting diode control process, the problem of inconsistent data coordinates is solved, and unified data analysis and efficient yield analysis are realized.

CN120280359APending Publication Date: 2025-07-08CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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Patent Information

Application Number
CN202410005183.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-01-02
Publication Date
2025-07-08

AI Technical Summary

Technical Problem

The coordinates of the measurement data at different stages in the existing micro-light emitting diode control process are not uniform, which leads to difficulty in data analysis and affects the analysis and processing efficiency.

Method used

By acquiring the first and second types of measurement data of multiple batches of wafers, data association is established using batch information, and merged them into the same coordinate system to perform data merging, including rotating and matching the coordinates of the block to be measured to achieve data unity.

Benefits of technology

It realizes synchronous viewing of the entire process measurement data based on combined file data, which facilitates yield analysis and problem positioning, and improves analysis and processing efficiency.

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Abstract

The invention provides a wafer measurement data combination method, device and equipment and a medium, and the method comprises the following steps: obtaining multiple batches of wafers, each wafer comprising a plurality of blocks to be measured; performing first type measurement on each to-be-measured block to obtain first measurement data corresponding to each to-be-measured block; wherein the first measurement data is associated with batch information; performing a second type of measurement on the plurality of batches of wafers to obtain second measurement data, the second measurement data being associated with the batch information; and combining the second measurement data and the first measurement data of the same wafer according to the batch information to complete data combination. According to the method and the device, more intuitive file combining data can be provided for subsequent yield analysis, and the analysis processing efficiency is improved.
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Description

Technical Field

[0001] The present invention relates to the field of semiconductor production applications, and particularly to a method, device, equipment and medium for combining wafer measurement data. Background Art

[0002] In the prior art, the micro light-emitting diode (Micro-LED) technology is the latest developed display technology. As a new generation of display technology, Micro-LED has higher brightness, better luminous efficiency and lower power consumption than the existing OLED technology. The Micro-LED display has advantages in terms of good stability, long life and operating temperature, and also inherits the advantages of LED such as low power consumption, high color saturation, fast response speed and strong contrast, and has great application prospects.

[0003] Generally, micro light-emitting diodes are distributed in blocks pre-divided on a wafer. During the production process of micro light-emitting diodes, usually the products are fabricated based on the whole wafer. The measurement directions and output coordinate systems for the measurement of the divided blocks and the finished measurement of the whole wafer are not unified, resulting in the inability to directly correspond the data obtained from different measurements, making it impossible to accurately perform yield analysis and affecting the efficiency of analysis and processing. Summary of the Invention

[0004] In view of the above problems existing in the prior art, the present invention provides a method, device, equipment and medium for combining wafer measurement data, mainly solving the problem that the measurement data coordinates in different stages of the existing micro light-emitting diode manufacturing process are not unified, resulting in difficult data analysis and affecting the analysis and processing efficiency.

[0005] To achieve the above object and other objects, the technical solution adopted by the present invention is as follows.

[0006] The present application provides a method for combining wafer measurement data, including the following steps: obtaining a plurality of batches of wafers, where each wafer includes a plurality of blocks to be measured; respectively performing a first type of measurement on each block to be measured to obtain first measurement data corresponding to each block to be measured; where the first measurement data is associated with batch information; respectively performing a second type of measurement on the plurality of batches of wafers to obtain second measurement data, where the second measurement data is associated with the batch information; and combining the second measurement data and the first measurement data of the same wafer according to the batch information to complete data combination.

[0007] In an embodiment of the present application, before merging the second measurement data and the first measurement data of the same wafer according to the batch information, the following steps are further included: determining the product type of the corresponding wafer according to the batch information associated with the first measurement data; determining the last measurement site for the second type of measurement as the target measurement site according to the product type; obtaining the second measurement data of the corresponding batch stored in the target measurement site, and establishing a correspondence between the second measurement data and the first measurement data of the same wafer according to the production order of the wafer in the batch information.

[0008] In an embodiment of the present application, after establishing the correspondence between the second measurement data and the first measurement data of the same wafer, the following steps are further included: obtaining the extreme values of the abscissa and the extreme values of the ordinate of the corresponding wafer during the second type of measurement; determining the flat edge orientation of the corresponding wafer during the second type of measurement according to the extreme values of the abscissa or the extreme values of the ordinate, so as to map the first measurement data and the second measurement data to the same coordinate system based on the flat edge orientation.

[0009] In an embodiment of the present application, mapping the first measurement data and the second measurement data to the same coordinate system based on the flat edge orientation includes the following steps: if the flat edge orientation of the wafer corresponding to the first measurement data is inconsistent with the flat edge orientation of the wafer corresponding to the second measurement data, rotating the second measurement data so that the flat edge orientations are consistent.

[0010] In an embodiment of the present application, merging the second measurement data and the first measurement data of the same wafer according to the batch information includes the following steps: obtaining the spacing between adjacent grains in the second measurement data; determining the test blocks to which each grain belongs and the index information according to the spacing, where the index information is determined according to the position of the test block in the wafer and is associated with the second measurement data; matching the coordinates of the test blocks corresponding to the first measurement data with the coordinates of the corresponding test blocks in the second test data according to the index information, and merging the data with matching coordinates to generate combined file data.

[0011] In an embodiment of the present application, matching the coordinates of the to-be-tested block corresponding to the first measurement data with the coordinates of the corresponding to-be-tested block in the second test data according to the index information includes the following steps: obtaining the size information of the to-be-tested block in the first measurement data, denoted as the first size; obtaining the size information of the to-be-tested block in the second measurement data, denoted as the second size; determining the distance between adjacent to-be-tested blocks according to the distance between adjacent grains in the second measurement data, denoted as the inter-block distance; performing the coordinate matching according to the first size, the second size and the inter-block distance to determine the endpoint information of the same to-be-tested block; and merging the first test data and the second test data according to the endpoint information.

[0012] In an embodiment of the present application, after generating the combined file data, the following steps are further included: generating a measurement view according to the combined file data; and outputting the measurement view to a preset terminal for display.

[0013] The present application further provides a wafer measurement data combining device, including: a wafer acquisition module for acquiring multiple batches of wafers, where each wafer includes multiple to-be-tested blocks; a first measurement module for respectively performing a first type of measurement on each to-be-tested block to obtain first measurement data corresponding to each to-be-tested block, where the first measurement data is associated with batch information; a second measurement module for respectively performing a second type of measurement on the multiple batches of wafers to obtain second measurement data, where the second measurement data is associated with the batch information; and a combining module for combining the second measurement data and the first measurement data of the same wafer according to the batch information to complete data combination.

[0014] The present application further provides a computer device, including: a memory, a processor, and a computer program stored on the memory and executable on the processor, where when the processor executes the computer program, the steps of the wafer measurement data combining method are implemented.

[0015] The present application further provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the wafer measurement data combining method are implemented.

[0016] As described above, a wafer measurement data combining method, device, equipment, and medium proposed by the present application have the following beneficial effects.

[0017] Based on batch information, the present application automatically combines measurement data at different stages during the product manufacturing process. When performing data analysis, the measurement data of the entire manufacturing process can be synchronously viewed based on the combined file data, which is convenient for yield analysis and problem location, and improves the analysis and processing efficiency. Description of the Drawings

[0018] Figure 1 Schematic flow diagram of the wafer measurement data file combination method in an embodiment of the present application.

[0019] Figure 2 Schematic structural diagram of the wafer.

[0020] Figure 3 Measurement view generated based on the combined data in an embodiment of the present application.

[0021] Figure 4 Module diagram of the wafer measurement data file combination device in an embodiment of the present application.

[0022] Figure 5 Schematic architecture diagram of the computer device in an embodiment of the present application.

[0023] Explanation of the reference numerals in the drawings:

[0024] 40 - Wafer acquisition module; 41 - First measurement module; 42 - Second measurement module; 43 - File combination module; 51 - Memory; 511 - Internal memory; 52 - Processor; 53 - Non-volatile storage medium; 54 - Display screen; 55 - Network interface. Specific implementation manners

[0025] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0026] It should be noted that the drawings provided in the following embodiments only illustrate the basic concept of the present invention in a schematic manner. Therefore, only the components related to the present invention are shown in the drawings, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0027] Terminology analysis:

[0028] PL (Photo luminescence) measurement, also known as photoluminescence measurement, can be used to detect and analyze various technological processes such as silicon wafers, diffusion, etching, electrode printing, and solar cells. It can quickly and effectively locate problems that occur during the production process, providing a reliable guarantee for product quality. The principle of PL photoluminescence is as follows: a laser with a specific wavelength is used as the excitation light source to provide photons with a certain amount of energy. The ground-state electrons in the silicon wafer absorb these photons and enter the excited state, releasing near-infrared light with a peak wavelength of around 1150 nm. Then, a highly sensitive and high-resolution camera is used for photosensing and imaging. After imaging, the light intensity is proportional to the concentration of non-equilibrium minority carriers at the corresponding position. Since defects will cause a decrease in the concentration of minority carriers in this area, weakening its fluorescence effect, it will appear as dark spots, lines, or a certain area after imaging. Therefore, photoluminescence can be used to determine whether there are defects, impurities, etc. in the sample that ultimately affect the battery efficiency.

[0029] AOI (Automated Optical Inspection) is a device that detects common defects encountered in welding production based on optical principles. AOI is a newly emerging type of testing technology, but it has developed rapidly, and many manufacturers have launched AOI testing equipment. When automatically detecting, the machine automatically scans the object to be tested through a camera, collects images, compares the tested solder joints with the qualified parameters in the database, and after image processing, detects the defects on the object to be tested and displays / marks the defects through a display or automatic marking for maintenance personnel to repair.

[0030] The inventor's research found that: the wafers of existing Micro products are usually divided into 12 Blocks. However, in actual products, the entire wafer is used for operation. The MAP diagram measured by AOI is for the entire wafer, and the diagram measured by Micro PL for Micro products is for 12 Blocks. Moreover, there are differences in the format and measurement methods of the data thrown by AOI and Micro PL, resulting in the inability to conduct comparative analysis. The specific problems are as follows:

[0031] 1. The MAP diagram output by AOI is for the entire wafer, while Micro PL is for 12 BLOCKs. The coordinates are inconsistent, and the number of die is inconsistent.

[0032] 2. The measurement directions of AOI and Micro PL are different, and the directions of the output data are also different.

[0033] 3. Micro PL outputs coordinates according to Blocks, and the coordinates of each Block are the same. It is necessary to distinguish Blocks, but the human eye cannot distinguish them.

[0034] 4. The number of particles measured by AOI and Micro PL may be inconsistent for the same wafer due to reasons such as intermediate logistics, resulting in differences in the MAP diagrams.

[0035] 5. Through human eye recognition, only the differences between the two measured MAP diagrams can be seen, and it is impossible to analyze in combination with specific die.

[0036] Based on the problems existing in the above prior art, the present application proposes a method, device, equipment and medium for combining wafer measurement data. The technical solution of the present application will be elaborated in detail below with reference to specific embodiments.

[0037] Please refer to Figure 1 , Figure 1 which is a schematic flowchart of the method for combining wafer measurement data in an embodiment of the present application. The method includes the following steps:

[0038] Step S100, obtain multiple batches of wafers, where each wafer includes multiple blocks to be measured.

[0039] In one embodiment, multiple batches of wafers can flow into the production process synchronously. Each batch may include multiple wafers, and the batch information may include the number of wafers, batch number, product type to be produced, etc. Each wafer in each batch can be divided into multiple blocks to be measured according to actual production requirements. Exemplarily, it can be divided into 12 blocks to be measured, and each block to be measured can be assigned fixed index information. The positions and division methods of the blocks to be measured of the wafers in the same batch are the same.

[0040] Step S110, perform the first type of measurement on each block to be measured respectively, and obtain the first measurement data corresponding to each block to be measured respectively, where the first measurement data is associated with the batch information.

[0041] In one embodiment, the first measurement may be a PL measurement. A station for performing PL measurement may be set up on the production line. After the wafer is transferred to the corresponding station, the wafer is subjected to the first type of measurement by the corresponding Micro PL measurement device. Since multiple measurement blocks have been defined for each wafer before the PL measurement, for example, if there are 12 measurement blocks, the Micro PL measurement device can measure the 12 measurement blocks respectively to obtain the first measurement data corresponding to each measurement block. The first measurement data of the 12 measurement blocks can be stored in a database. Since the first measurement data obtained by the Micro PL measurement device is usually in BLOB format, in order to facilitate the unification of data formats during subsequent merging, the BLOB format data can be converted into CSV format data. At the same time, the first measurement data is associated with the batch information, where the batch information may include batch number, wafer number, measurement machine number, etc. For example, the file storing the first measurement data can be named: batch number + wafer number + measurement machine number + file name, and stored in this form to establish an association relationship for subsequent data search. At the same time, the first measurement data can be backed up, and the backup data can be stored in the cloud so that other applications can directly access the cloud to call the data. For example, the first measurement data can be a near-infrared image of the corresponding measurement block. The near-infrared images are stored in the measurement device and the cloud respectively, and the images are associated with the corresponding batch information.

[0042] Step S120: Perform the second type of measurement on wafers of multiple batches respectively to obtain second measurement data, where the second measurement data is associated with the aforementioned batch information.

[0043] In one embodiment, during the wafer manufacturing process, the wafer may pass through multiple AOI measurement stations. After the wafer arrives at the corresponding AOI measurement station, the AOI measurement device can be used to perform the second type of measurement. By measuring the same product with the AOI measurement device, the second measurement data is output. The second measurement data can be an image of the entire wafer. During the wafer manufacturing process, the wafer is divided into several die. Taking the production of micro light-emitting diodes as an example, each die corresponds to a micro light-emitting diode. When the AOI measurement device performs the second type of measurement, the coordinate information corresponding to each die can be obtained. The AOI measurement device can save the second measurement data as a CSV format file for storage. The specific storage file format can also be adjusted according to real-time application requirements, as long as the formats of the first measurement data and the second measurement data are unified before merging, which is not limited here. Similarly, the second measurement data can be associated with the corresponding batch information. For example, the second measurement data can be associated with information such as batch number and wafer number to facilitate subsequent data query and call. The second measurement data can also be backed up. The data stored in the AOI measurement device is backed up to the cloud, and other devices or applications can obtain the corresponding second measurement data by accessing the cloud database.

[0044] Step S130: Merge the second measurement data and the first measurement data of the same wafer according to the batch information to complete data filing.

[0045] In one embodiment, the first measurement data and the second measurement data in the cloud can be retrieved, and according to the correspondence between the measurement data and the batch information, the first measurement data and the second measurement data of the same wafer are determined.

[0046] In one embodiment, before merging the second measurement data and the first measurement data of the same wafer according to the batch information, the product type of the corresponding wafer can be determined according to the batch information associated with the first measurement data; the last measurement station for the second measurement is determined as the target measurement station according to the product type; the second measurement data of the corresponding batch stored in the target measurement station is obtained, and the correspondence between the second measurement data and the first measurement data of the same wafer is established according to the production order of the wafer in the batch information. Specifically, the target measurement station is provided with equipment for performing AOI measurement. Since the product may go through AOI measurement more than once during the production process, the data of the last AOI measurement can best reflect the product yield situation. Therefore, based on the batch number of the first measurement data, the product type to be produced by the corresponding wafer can be obtained, and based on the product type, the production line for producing this product type can be determined, and then the last AOI measurement station passed by the corresponding product can be determined as the target measurement station. By querying the second measurement data of this station, the first measurement data and the second measurement data of the same wafer are obtained based on the batch number and the wafer number.

[0047] In one embodiment, after establishing the correspondence between the second measurement data and the first measurement data of the same wafer, the following steps are further included: obtaining the extreme values of the abscissa and the extreme values of the ordinate of the corresponding wafer during the second type of measurement; determining the flat edge orientation of the corresponding wafer during the second type of measurement according to the extreme values of the abscissa or the extreme values of the ordinate, so as to map the first measurement data and the second measurement data to the same coordinate system based on the flat edge orientation.

[0048] Please refer to Figure 2 , Figure 2It is a schematic structural diagram of a wafer. A flat edge is provided on the wafer, and die positioning can be performed according to the relative positions of the dies and the flat edge in the wafer. Usually, when performing Micro PL measurement, the flat edge of the wafer is fixed upward. However, due to different production requirements for different products, when performing AOI measurement, there are differences in the flat edge orientations of the wafers of different products. Therefore, after obtaining the second measurement data, the abscissas and ordinates of each die in the second measurement data can be further statistically analyzed to obtain the die with the largest abscissa value, the die with the smallest abscissa value, the die with the largest ordinate value, and the die with the smallest ordinate value. If the number of dies with the largest abscissa value is the largest, it indicates that there is a side perpendicular to the horizontal axis on the rightmost side of the wafer, and the abscissa of this side is equal to the maximum value, that is, the flat edge of the wafer faces right; similarly, if the number of dies with the smallest abscissa value is the largest, it means that the flat edge of the wafer faces left; if the number of dies with the largest ordinate value is the largest, it means that the flat edge of the wafer faces up; if the number of dies with the smallest ordinate value is the largest, it means that the flat edge of the wafer faces down, so as to determine the flat edge orientation of the wafer.

[0049] In one embodiment, mapping the first measurement data and the second measurement data to the same coordinate system based on the flat edge orientation includes the following steps: If the flat edge orientation of the wafer corresponding to the first measurement data is inconsistent with the flat edge orientation of the wafer corresponding to the second measurement data, rotate the second measurement data to make the flat edge orientations consistent.

[0050] Specifically, when the flat edge orientation of the wafer corresponding to the first measurement data is inconsistent with the flat edge orientation of the wafer corresponding to the second measurement data, the second measurement data needs to be rotated. Exemplarily, if the flat edge of the first measurement data faces up and the flat edge of the second measurement data faces right, the second measurement data can be rotated counterclockwise by 90° to ensure that the flat edge orientations are consistent. After the flat edge orientations are consistent, the coordinates of each point in the first measurement data can be mapped to the coordinate system where the second measurement data is located, so as to facilitate operations such as distance calculation based on the coordinates of the same coordinate system.

[0051] In one embodiment, merging the second measurement data and the first measurement data of the same wafer according to the batch information includes the following steps: Obtain the spacing between adjacent dies in the second measurement data; Determine the test blocks and index information to which each die belongs according to the spacing, where the index information is determined according to the position of the test block in the wafer and is associated with the second measurement data; Match the coordinates of the test blocks corresponding to the first measurement data with the coordinates of the corresponding test blocks in the second test data according to the index information, and merge the data with matched coordinates to generate combined data.

[0052] In one embodiment, when the flat edges face in different directions, after rotating to adjust the direction of the flat edges, the grains in the second measurement data can be sorted according to the coordinate axes. By comparing the adjacent coordinates, the distance between points can be obtained (exemplarily, the distance is 1). Furthermore, based on the distance, the distance between different blocks to be measured can be determined. Since there may be cases of grain detachment or bad points during the movement of the wafer, the states of the wafer during the first type of measurement and the second type of measurement may be inconsistent, and there may be missing points between the points on the wafer. A distance threshold can be set. Only when the distance between points is greater than this distance threshold, the corresponding distance is considered to be the distance between the blocks to be measured. Exemplarily, the distance threshold can be set to 5, or it can be set and adjusted according to actual application requirements, which is not limited here. After determining the distance between the blocks to be measured, based on this distance, information such as the edges and endpoints of the blocks to be measured can be determined, and then the coordinate information of the grains belonging to each block to be measured can be determined. The position of each block to be measured in the grains is fixed. Different numbers can be assigned to the blocks to be measured at different positions in the wafer to obtain the index information of the blocks to be measured. In one embodiment, the index information can be set to increase sequentially from left to right and from bottom to top. The specific index information is as Figure 2 shown. The indexes of 12 blocks to be measured are 1 - 12 respectively. The index information can also be adjusted according to actual application requirements, which is not limited here.

[0053] In one embodiment, the method for determining the endpoint coordinates of the block to be measured can be expressed as: if the coordinates of the adjacent points of a certain point are missing and the missing part exceeds the distance between the blocks to be measured, then this point is considered to be the endpoint coordinate of the block to be measured.

[0054] In one embodiment, matching the coordinates of the blocks to be measured corresponding to the first measurement data with the coordinates of the corresponding blocks to be measured in the second test data according to the index information includes the following steps: obtaining the size information of the blocks to be measured in the first measurement data, denoted as the first size; obtaining the size information of the blocks to be measured in the second measurement data, denoted as the second size; determining the distance between adjacent blocks to be measured according to the distance between adjacent grains in the second measurement data, denoted as the inter-block distance; performing coordinate matching according to the first size, the second size, and the inter-block distance to determine the endpoint information of the same block to be measured; and merging the first test data and the second test data according to the endpoint information.

[0055] Specifically, in order to prevent abnormal data processing caused by missing coordinates, it is necessary to calculate the distance AOI_Block_Size between the two endpoints of the block to be measured in the second measurement data and the distance PL_Block_Size between the two endpoints in the first measurement data, and then compare the two. The comparison method is as follows:

[0056] AOI_Block_Size+(AOI_Block_Spac / 2+1)>PL_Block_Size,

[0057] AOI_Block_Size - (AOI_Block_Spac / 2 + 1) < PL_Block_Size

[0058] Wherein, PL_Block_Size is the first size, AOI_Block_Size is the second size, and AOI_Block_Spac is the distance between blocks. When the above two formulas are satisfied simultaneously, the corresponding measured blocks in the first measurement data and the second measurement data are the same measured block, and the endpoints are the endpoints of the same measured block.

[0059] In one embodiment, after determining the first measurement data and the second measurement data corresponding to the same measured block, the data of each measured block can be matched one by one. According to the endpoints of each measured block (exemplarily, B1: (0, 0), (0, 80), (80, 0), (80, 80)), all the points within the B1 coordinate range are taken, sorted, and logical coordinates are generated cyclically. The logical coordinates start from (1, 1), and the logical coordinates (AOI_X_Index, AOI_Y_Index) of the AOI measurement data are generated, thereby obtaining the combined data.

[0060] In one embodiment, after generating the combined data, the following steps are further included: generating a measurement view according to the combined data; outputting the measurement view to a preset terminal for display.

[0061] Specifically, the combined data can be stored in a specified path, such as a cloud network disk, etc. When analysis is required, the combined data can be called to generate a measurement view, and the measurement view is output to a background display device, a mobile terminal, or other terminal devices for display, so that relevant personnel can view the display content for yield analysis and defect location.

[0062] Specifically, please refer to Figure 3 , Figure 3 is the measurement view generated based on the combined data in an embodiment of the present application. Through the foregoing combination method, the first measurement data and the second measurement data can be accurately combined, which is beneficial to subsequent yield analysis based on an intuitive image display and improves the analysis and processing efficiency.

[0063] In one embodiment, such as Figure 4As shown, a wafer measurement data filing device is provided. The device includes: a wafer acquisition module 40 for acquiring wafers of multiple batches, where each wafer includes multiple blocks to be measured; a first measurement module 41 for performing first-type measurements on each block to be measured respectively to obtain first measurement data corresponding to each block to be measured; where the first measurement data is associated with batch information; a second measurement module 42 for performing second-type measurements on wafers of multiple batches respectively to obtain second measurement data, where the second measurement data is associated with the batch information; a filing module 43 for merging the second measurement data and the first measurement data of the same wafer according to the batch information to complete data filing.

[0064] In one embodiment, before the filing module 43 is further configured to merge the second measurement data and the first measurement data of the same wafer according to the batch information, the following steps are performed: determining the product type of the corresponding wafer according to the batch information associated with the first measurement data; determining the last measurement station for performing the second-type measurement as the target measurement station according to the product type; acquiring the second measurement data of the corresponding batch stored in the target measurement station, and establishing a corresponding relationship between the second measurement data and the first measurement data of the same wafer according to the production order of the wafer in the batch information.

[0065] In one embodiment, the filing module 43 is further configured to perform the following steps: acquiring the abscissa extreme value and the ordinate extreme value of the corresponding wafer when performing the second-type measurement; determining the flat-edge orientation of the corresponding wafer when performing the second-type measurement according to the abscissa extreme value or the ordinate extreme value, so as to map the first measurement data and the second measurement data to the same coordinate system based on the flat-edge orientation.

[0066] In one embodiment, the filing module 43 is further configured to perform the following steps: if the flat-edge orientation of the wafer corresponding to the first measurement data is inconsistent with the flat-edge orientation of the wafer corresponding to the second measurement data, rotate the second measurement data to make the flat-edge orientations consistent.

[0067] In one embodiment, the filing module 43 is further configured to perform the following steps: acquiring the spacing between adjacent grains in the second measurement data; determining the blocks to be measured and the index information to which each grain belongs according to the spacing, where the index information is determined according to the position of the block to be measured in the wafer and is associated with the second measurement data; matching the coordinates of the blocks to be measured corresponding to the first measurement data with the coordinates of the corresponding blocks to be measured in the second test data, and merging the data with matched coordinates to generate the filed data.

[0068] In one embodiment, the file combination module 43 is further configured to perform the following steps: obtaining the size information of the to-be-tested block in the first measurement data, denoted as the first size; obtaining the size information of the to-be-tested block in the second measurement data, denoted as the second size; determining the distance between adjacent to-be-tested blocks according to the distance between adjacent grains in the second measurement data, denoted as the inter-block distance; performing the coordinate matching according to the first size, the second size and the inter-block distance to determine the endpoint information of the same to-be-tested block; and merging the first test data and the second test data according to the endpoint information.

[0069] In one embodiment, after generating the file combination data, the file combination module 43 is further configured to generate a measurement view according to the file combination data; and output the measurement view to a preset terminal for display.

[0070] The above wafer measurement data file combination device can be implemented in the form of a computer program, and the computer program can run on a computer device as shown in Figure 5 The computer device includes: a memory 51, a processor 52, and a computer program stored on the memory 51 and executable on the processor 52.

[0071] Each module in the above wafer measurement data file combination device can be implemented in whole or in part by software, hardware, and their combination. Each of the above modules can be embedded in or independent of the memory 51 of the terminal in hardware form, or stored in the memory 51 of the terminal in software form, so as to facilitate the processor 52 to call and execute the operations corresponding to each of the above modules. The processor 52 can be a central processing unit (CPU), a microprocessor, a single-chip microcomputer, etc.

[0072] As Figure 5 shown, it is a schematic internal structure diagram of a computer device in one embodiment. A computer device is provided, including: a memory 51, a processor 52, and a computer program stored on the memory 51 and executable on the processor 52. When the processor 52 executes the computer program, the following steps are implemented: obtaining multiple batches of wafers, where each wafer includes multiple to-be-tested blocks; respectively performing a first type of measurement on each of the to-be-tested blocks to obtain first measurement data corresponding to each of the to-be-tested blocks; where the first measurement data is associated with batch information; respectively performing a second type of measurement on the multiple batches of wafers to obtain second measurement data, where the second measurement data is associated with the batch information; and merging the second measurement data and the first measurement data of the same wafer according to the batch information to complete data file combination.

[0073] In one embodiment, before the processor 52 performs the operation of merging the second measurement data of the same wafer with the first measurement data according to the batch information, the following steps are further included: determining the product type of the corresponding wafer according to the batch information associated with the first measurement data; determining the last measurement site for performing the second type of measurement as the target measurement site according to the product type; obtaining the second measurement data of the corresponding batch stored in the target measurement site, and establishing a corresponding relationship between the second measurement data and the first measurement data of the same wafer according to the production order of the wafer in the batch information.

[0074] In one embodiment, after the processor 52 performs the operation of establishing a corresponding relationship between the second measurement data and the first measurement data of the same wafer, the following steps are further included: obtaining the abscissa extreme value and the ordinate extreme value of the corresponding wafer when performing the second type of measurement; determining the flat edge orientation of the corresponding wafer when performing the second type of measurement according to the abscissa extreme value or the ordinate extreme value, so as to map the first measurement data and the second measurement data to the same coordinate system based on the flat edge orientation.

[0075] In one embodiment, the operation of mapping the first measurement data and the second measurement data to the same coordinate system based on the flat edge orientation includes the following steps: if the flat edge orientation of the wafer corresponding to the first measurement data is inconsistent with the flat edge orientation of the wafer corresponding to the second measurement data, rotating the second measurement data so that the flat edge orientations are consistent.

[0076] In one embodiment, the operation of merging the second measurement data of the same wafer with the first measurement data according to the batch information includes the following steps: obtaining the distance between adjacent grains in the second measurement data; determining the measurement block and index information to which each grain belongs according to the distance, where the index information is determined according to the position of the measurement block in the wafer and is associated with the second measurement data; matching the coordinates of the measurement blocks corresponding to the first measurement data with the coordinates of the corresponding measurement blocks in the second test data according to the index information, and merging the data with matched coordinates to generate combined file data.

[0077] In one embodiment, when the above-mentioned processor 52 executes, the matching of the coordinates of the to-be-tested block corresponding to the first measurement data with the coordinates of the corresponding to-be-tested block in the second test data according to the index information includes the following steps: obtaining the size information of the to-be-tested block in the first measurement data, denoted as the first size; obtaining the size information of the to-be-tested block in the second measurement data, denoted as the second size; determining the distance between adjacent to-be-tested blocks according to the distance between adjacent grains in the second measurement data, denoted as the inter-block distance; performing the coordinate matching according to the first size, the second size and the inter-block distance to determine the endpoint information of the same to-be-tested block; and merging the first test data and the second test data according to the endpoint information.

[0078] In one embodiment, after generating the combined file data when the above-mentioned processor 52 executes, the following steps are further included: generating a measurement view according to the combined file data; and outputting the measurement view to a preset terminal for display.

[0079] In one embodiment, the above computer device can be used as a server, including but not limited to an independent physical server, or a server cluster composed of multiple physical servers. The computer device can also be used as a terminal, including but not limited to mobile phones, tablet computers, personal digital assistants or smart devices, etc. As Figure 5 shown, the computer device includes a processor 52, a non-volatile storage medium 53, an internal memory 511, a display screen 54 and a network interface 55 connected through a system bus.

[0080] Among them, the processor of the computer device is used to provide computing and control capabilities to support the operation of the entire computer device. The non-volatile storage medium 53 of the computer device stores an operating system and computer programs. The computer programs can be executed by the processor 52 to implement a wafer measurement data combination method provided in each of the above embodiments. The internal memory 511 in the computer device provides a high-speed cache operating environment for the operating system and computer programs in the non-volatile storage medium 53. The display interface can display data through the display screen 54. The display screen 54 can be a touch screen, such as a capacitive screen or an electronic screen, and can generate corresponding instructions by receiving click operations on the controls displayed on the touch screen.

[0081] Those skilled in the art can understand that Figure 5 the structure of the computer device shown in

[0082] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the following steps are implemented: obtaining multiple batches of wafers, where each wafer includes multiple blocks to be measured; respectively performing a first type of measurement on each block to be measured to obtain first measurement data corresponding to each block to be measured; where the first measurement data is associated with batch information; respectively performing a second type of measurement on the wafers of the multiple batches to obtain second measurement data, where the second measurement data is associated with the batch information; and merging the second measurement data and the first measurement data of the same wafer according to the batch information to complete data filing.

[0083] In one embodiment, before the computer program, when executed by a processor, merges the second measurement data and the first measurement data of the same wafer according to the batch information, the following steps are further included: determining the product type of the corresponding wafer according to the batch information associated with the first measurement data; determining the last measurement station for performing the second type of measurement as the target measurement station according to the product type; obtaining the second measurement data of the corresponding batch stored in the target measurement station, and establishing a correspondence between the second measurement data and the first measurement data of the same wafer according to the production order of the wafer in the batch information.

[0084] In one embodiment, after the computer program, when executed by a processor, establishes the correspondence between the second measurement data and the first measurement data of the same wafer, the following steps are further included: obtaining the extreme values of the abscissa and the extreme values of the ordinate of the corresponding wafer when performing the second type of measurement; determining the flat edge orientation of the corresponding wafer when performing the second type of measurement according to the extreme values of the abscissa or the extreme values of the ordinate, so as to map the first measurement data and the second measurement data to the same coordinate system based on the flat edge orientation.

[0085] In one embodiment, when the computer program, when executed by a processor, maps the first measurement data and the second measurement data to the same coordinate system based on the flat edge orientation, the following steps are included: if the flat edge orientation of the wafer corresponding to the first measurement data is inconsistent with the flat edge orientation of the wafer corresponding to the second measurement data, rotating the second measurement data so that the flat edge orientations are consistent.

[0086] In one embodiment, when the computer program is executed by a processor, the merging of the second measurement data of the same wafer with the first measurement data according to the batch information is implemented, including the following steps: obtaining the spacing between adjacent die in the second measurement data; determining the die blocks to be measured and the index information to which each die belongs according to the spacing, where the index information is determined according to the position of the die block in the wafer, and the index information is associated with the second measurement data; matching the coordinates of the die blocks to be measured corresponding to the first measurement data with the coordinates of the corresponding die blocks in the second test data according to the index information, and merging the data with matching coordinates to generate merged data.

[0087] In one embodiment, when the computer program is executed by a processor, the matching of the coordinates of the die blocks to be measured corresponding to the first measurement data with the coordinates of the corresponding die blocks in the second test data according to the index information is implemented, including the following steps: obtaining the size information of the die blocks to be measured in the first measurement data, denoted as the first size; obtaining the size information of the die blocks to be measured in the second measurement data, denoted as the second size; determining the spacing between adjacent die blocks to be measured according to the spacing between adjacent die in the second measurement data, denoted as the inter-block distance; performing the coordinate matching according to the first size, the second size, and the inter-block distance to determine the endpoint information of the same die block to be measured; and merging the first test data and the second test data according to the endpoint information.

[0088] In one embodiment, after generating the merged data when the computer program is executed by a processor, the following steps are further included: generating a measurement view according to the merged data; and outputting the measurement view to a preset terminal for display.

[0089] In one embodiment, the above computer device can be used as a server, including but not limited to an independent physical server, or a server cluster composed of multiple physical servers. The computer device can also be used as a terminal, including but not limited to mobile phones, tablets, personal digital assistants, or smart devices, etc. As Figure 5 shown, the computer device includes a processor, a non-volatile storage medium, an internal memory, a display screen, and a network interface connected through a system bus.

[0090] Among them, the processor of the computer device is used to provide computing and control capabilities to support the operation of the entire computer device. The non-volatile storage medium of the computer device stores an operating system and a computer program. The computer program can be executed by the processor to implement the wafer measurement data filing method provided by each of the above embodiments. The internal memory in the computer device provides a cache operating environment for the operating system and the computer program in the non-volatile storage medium. The display interface can display data through a display screen. The display screen can be a touch screen, such as a capacitive screen or an electronic screen, and can generate corresponding instructions by receiving click operations on the controls displayed on the touch screen.

[0091] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The program can be stored in a non-volatile computer-readable storage medium. When the program is executed, it can include the processes of the embodiments of the above methods. Among them, the storage medium can be a magnetic disk, an optical disk, a read-only memory (ROM), etc.

[0092] The above embodiments are only illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A method for combining wafer measurement data, characterized in that Including the following steps: Obtain wafers in multiple batches, where each of the wafers includes multiple blocks to be measured; Perform first-type measurements on each of the blocks to be measured respectively, and obtain first measurement data corresponding to each of the blocks to be measured; wherein the first measurement data is associated with batch information; Perform second-type measurements on the wafers in the multiple batches respectively, and obtain second measurement data, wherein the second measurement data is associated with the batch information; Merge the second measurement data and the first measurement data of the same wafer according to the batch information to complete data filing.

2. The wafer measurement data filing method according to claim 1, wherein Before merging the second measurement data and the first measurement data of the same wafer according to the batch information, the following steps are further included: Determine the product type of the corresponding wafer according to the batch information associated with the first measurement data; Determine the last measurement station for performing the second-type measurement as the target measurement station according to the product type; Obtain the second measurement data of the corresponding batch stored in the target measurement station, and establish the corresponding relationship between the second measurement data and the first measurement data of the same wafer according to the production order of the wafer in the batch information.

3. The wafer measurement data filing method according to claim 2, wherein After establishing the corresponding relationship between the second measurement data and the first measurement data of the same wafer, the following steps are further included: Obtain the extreme value of the abscissa and the extreme value of the ordinate of the corresponding wafer when performing the second-type measurement; Determine the flat-edge orientation of the corresponding wafer when performing the second-type measurement according to the extreme value of the abscissa or the extreme value of the ordinate, so as to map the first measurement data and the second measurement data to the same coordinate system based on the flat-edge orientation.

4. The wafer measurement data filing method according to claim 3, characterized in that, Mapping the first measurement data and the second measurement data to the same coordinate system based on the flat-edge orientation includes the following steps: If the flat-edge orientation of the wafer corresponding to the first measurement data is inconsistent with the flat-edge orientation of the wafer corresponding to the second measurement data, rotate the second measurement data so that the flat-edge orientations are consistent.

5. The wafer measurement data filing method according to claim 4, wherein, Merging the second measurement data and the first measurement data of the same wafer according to the batch information includes the following steps: Obtain the spacing between adjacent grains in the second measurement data; Determine the block to be measured and the index information to which each grain belongs according to the spacing, wherein the index information is determined according to the position of the block to be measured in the wafer, and the index information is associated with the second measurement data; Match the coordinates of the block to be measured corresponding to the first measurement data with the coordinates of the corresponding block to be measured in the second test data, and merge the data with matched coordinates to generate filed data.

6. The wafer measurement data filing method according to claim 5, wherein Matching the coordinates of the block to be measured corresponding to the first measurement data with the coordinates of the corresponding block to be measured in the second test data includes the following steps: Obtain the size information of the block to be measured in the first measurement data, denoted as the first size; Obtain the size information of the block to be measured in the second measurement data, denoted as the second size; Determine the spacing between adjacent blocks to be measured according to the spacing between adjacent grains in the second measurement data, denoted as the inter-block distance; Perform the coordinate matching according to the first dimension, the second dimension, and the distance between the blocks to determine the endpoint information of the same block to be measured; Merge the first test data and the second test data according to the endpoint information.

7. The wafer measurement data filing method according to claim 5, wherein After generating the combined file data, the following steps are further included: Generate a measurement view according to the combined file data; Output the measurement view to a preset terminal for display.

8. A wafer measurement data filing device, characterized in that Include: A wafer acquisition module, configured to acquire wafers of multiple batches, where each of the wafers includes multiple blocks to be measured; A first measurement module, configured to perform a first type of measurement on each of the blocks to be measured respectively, to obtain first measurement data corresponding to each of the blocks to be measured; where the first measurement data is associated with batch information; A second measurement module, configured to perform a second type of measurement on the wafers of the multiple batches respectively, to obtain second measurement data, where the second measurement data is associated with the batch information; A file combination module, configured to combine the second measurement data and the first measurement data of the same wafer according to the batch information to complete file combination.

9. A computer device, comprising: A memory, a processor, and a computer program stored on the memory and executable on the processor, wherein when the processor executes the computer program, the steps of the wafer measurement data file combination method according to any one of claims 1 to 7 are implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, the steps of the wafer measurement data file combination method according to any one of claims 1 to 7 are implemented.