Radio frequency front-end module

Abstract

The invention relates to the technical field of radio frequency, in particular to a radio frequency front-end module, which comprises a substrate provided with a substrate upper surface, a substrate lower surface and a plurality of metal layers, the substrate upper surface and the substrate lower surface are oppositely arranged, and the metal layers are sequentially stacked from the substrate upper surface to the substrate lower surface; the switch chip is arranged on the lower surface of the substrate and comprises a first switch module and a second switch module, the first switch module and the second switch module are connected through a first metal connecting structure, the first metal connecting structure comprises a first wire, and the second metal connecting structure comprises a second wire. The first wire is arranged on any other metal layer except the bottom metal layer, and the bottom metal layer is a metal layer located on the lower surface of the substrate. According to the invention, the size of the radio frequency front-end module is reduced, the manufacturing cost is reduced, and the integration level and reliability of the switch chip are improved.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and particularly to a radio frequency front-end module. Background Art

[0002] With the continuous development of wireless communication technology, the integration degree of radio frequency front-end modules is getting higher and higher, and chips and components are becoming more and more dense. The traditional radio frequency front-end module usually adopts a single-sided packaging structure, integrating all chips and components on the same side of the substrate, which not only increases the substrate area, but also increases the interference between chips and components, affecting the output effect of radio frequency signals. Summary of the Invention

[0003] In view of the above problems, the embodiments of this application provide a radio frequency front-end module to solve the problem that the radio frequency front-end module cannot balance volume and performance at the same time.

[0004] The embodiments of this application provide a radio frequency front-end module, including:

[0005] A substrate having a substrate upper surface and a substrate lower surface disposed opposite to each other, and a plurality of metal layers stacked in sequence from the substrate upper surface to the substrate lower surface; and

[0006] A switch chip disposed on the substrate lower surface, including a first switch module and a second switch module, the first switch module and the second switch module are connected by a first metal connection structure, the first metal connection structure includes a first trace, and the first trace is disposed on any one of the metal layers other than the bottom metal layer, and the bottom metal layer is the metal layer located on the substrate lower surface.

[0007] Optionally, the first metal connection structure further includes a first metal via hole penetrating from the bottom metal layer through any one of the other metal layers and a second metal via hole penetrating from any one of the other metal layers through the bottom metal layer;

[0008] The output end of the first switch module is connected to the first end of the first trace through the first metal via hole, and the second end of the first trace is connected to the input end of the second switch module through the second metal via hole.

[0009] Optionally, the first trace is disposed on the metal layer adjacent to the bottom metal layer.

[0010] Optionally, the radio frequency front-end module further includes a notch module, and the notch module is connected between the first switch module and the second switch module;

[0011] The first metal connection structure further includes a third metal via hole penetrating from the bottom metal layer through any one of the remaining metal layers and a fourth metal via hole penetrating from any one of the remaining metal layers through the bottom metal layer. The output end of the first switch module is connected to the input end of the notch module through the third metal via hole, and the output end of the notch module is connected to the input end of the second switch module through the fourth metal via hole;

[0012] The first metal connection structure includes one first trace. The input end of the notch module is connected to the third metal via hole through the first trace, or the output end of the notch module is connected to the fourth metal via hole through the first trace; or, the first metal connection structure includes two first traces. The input end of the notch module is connected to the third metal via hole through one of the first traces, and the output end of the notch module is connected to the fourth metal via hole through the other first trace.

[0013] Optionally, the notch module is disposed on the upper surface of the substrate;

[0014] The metal layer located on the upper surface of the substrate is the top metal layer, and the first trace is disposed on the top metal layer.

[0015] Optionally, the notch module includes a first surface mount device.

[0016] Optionally, the notch module includes a first inductor and a first capacitor connected in parallel.

[0017] Optionally, the inductance value range of the first inductor is [0.5 nH, 3 nH], and the capacitance value range of the first capacitor is [1 pF, 5 pF].

[0018] Optionally, the height range of the first inductor is [0.2 mm, 0.25 mm].

[0019] Optionally, the notch module is disposed on the lower surface of the substrate;

[0020] The third metal via penetrates from the bottom metal layer through the metal layer adjacent to the bottom metal layer, the fourth metal via penetrates from the metal layer adjacent to the bottom metal layer through the bottom metal layer, the first metal connection structure includes two first traces disposed on the metal layer adjacent to the bottom metal layer, the first metal connection structure further includes a fifth metal via and a sixth metal via, the fifth metal via penetrates from the metal layer adjacent to the bottom metal layer through the bottom metal layer, the sixth metal via penetrates from the bottom metal layer through the metal layer adjacent to the bottom metal layer, the output end of the first switch module is connected to the input end of the notch module through the third metal via, one of the first traces, and the fifth metal via in sequence, and the output end of the notch module is connected to the input end of the second switch module through the sixth metal via, the other first trace, and the fourth metal via in sequence.

[0021] Optionally, the notch module includes an integrated passive device disposed on the substrate, or the notch module is integrated in the switch chip.

[0022] Optionally, the RF front-end module further includes a coupling module, the coupling module is disposed on the switch chip, and the coupling module is disposed between the first switch module and the notch module;

[0023] The input end of the coupling module is connected to the output end of the first switch module, the output end of the coupling module is connected to the input end of the notch module through the third metal via, the coupling end of the coupling module is configured to be connected to the input end of the detection module, and the isolation end of the coupling module is configured to be grounded.

[0024] Optionally, the RF front-end module further includes:

[0025] A signal input port connected to the input end of the first switch module; and

[0026] A filter matching module disposed on the upper surface of the substrate and on the connection path between the first switch module and the signal input port, and the filter matching module includes a second surface-mount device.

[0027] Optionally, the filter matching module and the first switch module are connected through a second metal connection structure, the second metal connection structure includes a second trace and a seventh metal via, the second trace is disposed on the top metal layer located on the upper surface of the substrate, the seventh metal via penetrates from the top metal layer through the bottom metal layer, the first end of the second trace is connected to the filter matching module, and the second end of the second trace is connected to the first switch module through the seventh metal via.

[0028] Optionally, the filtering and matching module includes a first filtering circuit and a second filtering circuit connected in sequence on the connection path;

[0029] The first filtering circuit includes a second capacitor and a second inductor. One end of the second capacitor is connected to the connection path, and the other end of the second capacitor is grounded through the second inductor;

[0030] The second filtering circuit includes a third capacitor and a third inductor. The third inductor is connected between the first filtering circuit and the first switch module. One end of the third capacitor is connected between the third inductor and the first switch module, and the other end of the third capacitor is grounded.

[0031] Optionally, the inductance value range of the second inductor is [0.5 nH, 3 nH], and the capacitance value range of the second capacitor is [1 pF, 5 pF].

[0032] Optionally, the inductance value range of the third inductor is [5 nH, 9 nH], and the capacitance value range of the third capacitor is [2 pF, 6 pF].

[0033] Optionally, the RF front-end module further includes a notch module, and the notch module is connected between the first switch module and the second switch module;

[0034] The projection of the switch chip on the upper surface of the substrate is a first projection, the projection of the notch module on the upper surface of the substrate is a second projection, and the projection of the filtering and matching module on the upper surface of the substrate is a third projection;

[0035] At least part of the first projection coincides with the second projection, or the first projection is close to the second projection; and / or at least part of the first projection coincides with the third projection, or the first projection is close to the third projection.

[0036] Optionally, the first switch module is an antenna switch module, the second switch module is a double-pole double-throw switch module, and the antenna switch module and the double-pole double-throw switch module are arranged in sequence on the RF signal transmission path.

[0037] Optionally, the RF front-end module further includes a signal transmission module, and the signal transmission module is arranged on the upper surface of the substrate. Wherein, the signal transmission module includes at least one of a power amplifier, a filter, and a third surface mount device.

[0038] The radio frequency front-end module provided by the embodiment of the present application includes: a substrate having a substrate upper surface and a substrate lower surface disposed opposite to each other, and a plurality of metal layers stacked in sequence from the substrate upper surface to the substrate lower surface; and a switch chip disposed on the substrate lower surface, including a first switch module and a second switch module, the first switch module and the second switch module are connected by a first metal connection structure, the first metal connection structure includes a first trace, the first trace is disposed on any one of the metal layers other than the bottom metal layer, and the bottom metal layer is the metal layer located on the substrate lower surface; in the above manner, by disposing the switch chip on the lower surface of the substrate, the double-sided space of the substrate can be effectively utilized, the integration degree can be improved, which is beneficial to the miniaturization design of the radio frequency front-end module. Integrating the first switch module and the second switch module inside the same switch chip, and connecting the first switch module and the second switch module through the first trace disposed on any one of the metal layers other than the bottom metal layer not only reduces the manufacturing cost, further reduces the area of the substrate, but also solves the problem of difficult to directly connect different switch modules inside the switch chip, and improves the integration degree and reliability of the switch chip.

[0039] These aspects or other aspects of the present application will be more clearly understood in the following description of the embodiments. Brief Description of the Drawings

[0040] Figure 1 The structural schematic diagram of the radio frequency front-end module provided by the embodiment of the present application is shown.

[0041] Figure 2 The structural block diagram of the radio frequency front-end module provided by the embodiment of the present application is shown.

[0042] Figure 3 Shows Figure 2 The structural schematic diagram of the radio frequency front-end module shown.

[0043] Figure 4 Shows Figure 2 The structural schematic diagram of the radio frequency front-end module shown.

[0044] Figure 5 Shows Figure 2 The structural schematic diagram of the radio frequency front-end module shown.

[0045] Figure 6 Shows Figure 2 The circuit schematic diagram of the radio frequency front-end module shown.

[0046] Figure 7 The structural schematic diagram of the radio frequency front-end module provided by the embodiment of the present application is shown.

[0047] Figure 8Shows the layout schematic diagram of the switch chip in the RF front-end module provided by the embodiment of the present application.

[0048] Figure 9 Shows Figure 8 The circuit schematic diagram of the RF front-end module shown.

[0049] Figure 10 Shows Figure 8 The structural schematic diagram of the RF front-end module shown.

[0050] Figure 11 Shows the structural block diagram of the RF front-end module provided by the embodiment of the present application.

[0051] Figure 12 Shows Figure 11 The structural schematic diagram of the RF front-end module shown.

[0052] Figure 13 Shows Figure 11 The circuit schematic diagram of the RF front-end module shown.

[0053] Figure 14 Shows the layout schematic diagram of the RF front-end module provided by the embodiment of the present application.

[0054] Figure 15 Shows the circuit architecture diagram of the RF front-end module provided by the embodiment of the present application.

[0055] Figure 16 Shows the structural schematic diagram of the RF front-end module provided by the embodiment of the present application. Detailed implementation manners

[0056] The following details the implementation manners of the present application. The examples of the implementation manners are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The implementation manners described below by referring to the accompanying drawings are exemplary only for explaining the present application and should not be construed as a limitation to the present application.

[0057] To enable those skilled in the art to better understand the solution of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts fall within the scope of protection of the present application.

[0058] In the embodiments of the present application, it should be noted that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0059] Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, such that a process, method, article or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising one..." does not exclude the presence of additional identical elements in the process, method, article or device comprising the element.

[0060] In the description of the embodiments of the present application, words such as "example" or "for example" are used to represent examples, explanations or descriptions. Any embodiment or design described as "for example" or "for instance" in the embodiments of the present application is not to be construed as more preferred or having more advantages than another embodiment or design. The use of words such as "example" or "for example" is intended to present relative concepts in a clear manner.

[0061] In addition, "a plurality of" in the embodiments of the present application means two or more. In view of this, "a plurality of" in the embodiments of the present application can also be understood as "at least two". "At least one" can be understood as one or more, for example, understood as one, two or more. For example, including at least one means including one, two or more, and does not limit which ones are included. For example, including at least one of A, B, and C, then what can be included are A, B, C, A and B, A and C, B and C, or A, B, and C.

[0062] It should be noted that in the embodiments of the present application, "and / or" describes the association relationship of associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / ", unless otherwise specified, generally represents an "or" relationship between the front and rear associated objects.

[0063] It should be pointed out that "connection" in the embodiments of the present application can be understood as electrical connection, and the connection of two electrical components can be a direct or indirect connection between the two electrical components. For example, when A is connected to B, it can be either a direct connection between A and B or an indirect connection between A and B through one or more other electrical components.

[0064] An embodiment of the present application provides a radio frequency front-end module 100, including a substrate 110 and a switch chip 120. Please refer to Figure 1As shown in the figure. The substrate 110 has a substrate upper surface 111, a substrate lower surface 112, and a metal layer 113. The substrate upper surface 111 and the substrate lower surface 112 are oppositely arranged. There are multiple layers of the metal layer 113, and the multiple layers of the metal layer 113 are sequentially stacked from the substrate upper surface 111 to the substrate lower surface 112. The switch chip 120 is disposed on the substrate lower surface 112. The switch chip 120 includes a first switch module 121 and a second switch module 122. The first switch module 121 and the second switch module 122 are connected by a first metal connection structure 130. The first metal connection structure 130 includes a first trace 131. The first trace 131 is disposed on any one of the metal layers other than the bottom metal layer 113a. The bottom metal layer 113a is the metal layer 113 located on the substrate lower surface 112.

[0065] In this embodiment, the substrate 110 adopts a double-sided packaging method. The switch chip 120 is disposed on the substrate lower surface 112, which can effectively utilize the double-sided space of the substrate 110, improve the integration degree, reduce the volume of the RF front-end module 100, and is conducive to the miniaturization design of the RF front-end module 100. Integrating the first switch module 121 and the second switch module 122 inside the same switch chip 120 and connecting the first switch module 121 and the second switch module 122 through the first trace 131 on the substrate 110 not only greatly saves the manufacturing cost, but also solves the problem of difficult direct connection of different switch modules inside the switch chip 120, and can also ensure that the performance of the switch chip 120 is not affected. In addition, by disposing the first trace 131 on any one of the metal layers other than the bottom metal layer 113a, it is not only easy to route the trace, but also can avoid interference between the first trace 131 and other components and traces inside the switch chip 120, improving the integration degree and reliability of the switch chip 120.

[0066] As an embodiment, the first switch module 121 is an antenna switch module (ASM, Antenna Switch Module), and the second switch module 122 is a double-pole double-throw (DPDT, Double Pole Double Throw) switch module. The antenna switch module and the double-pole double-throw switch module are sequentially disposed on the RF signal transmission path. The input end of the first switch module 121 can be connected to a signal transmission module and / or a signal input port, etc., to receive RF signals. The two output ends of the second switch module 122 can be connected to their respective corresponding antenna ports, etc.

[0067] As an implementation manner, the switch chip 120 can be a flip-chip, and the switch chip 120 is disposed on the lower surface 112 of the substrate in an upside-down manner. It should be noted that in other implementation manners, the switch chip 120 can also be disposed on the lower surface 112 of the substrate in other ways, which can be set according to actual situations and will not be elaborated here.

[0068] As an implementation manner, please refer to Figure 1 As shown, the substrate 110 may include four metal layers 113. It should be noted that in other implementation manners, the substrate 110 may also include five metal layers, six metal layers or any number of metal layers, which can be set according to actual situations and will not be limited here.

[0069] As an implementation manner, the substrate 110 can be a small-sized substrate.

[0070] Exemplarily, the length range of the substrate 110 can be [5 mm, 15 mm]. For example, the length of the substrate 110 can be, but is not limited to, 5 mm, 6 mm, 8 mm, 10 mm, 12 mm or 15 mm, etc. Exemplarily, the width range of the substrate 110 can be [3 mm, 10 mm]. For example, the width of the substrate 110 can be, but is not limited to, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm or 10 mm, etc. Exemplarily, the height range of the substrate 110 can be [0.5 mm, 1.5 mm]. For example, the height of the substrate 110 can be, but is not limited to, 0.5 mm, 0.6 mm, 0.8 mm, 1.0 mm, 1.1 mm, 1.3 mm or 1.5 mm, etc.

[0071] In some examples, the length of the substrate 110 can be 5.4 mm, the width of the substrate 110 can be 4.95 mm, and the height of the substrate 110 can be 0.8 mm.

[0072] In some implementation manners, please refer to Figure 1 As shown, the first metal connection structure 130 further includes a first metal via 132 and a second metal via 133. The first metal via 132 penetrates through the metal layer where the first trace 131 is located from the bottom metal layer 113a, and the second metal via 133 penetrates through the bottom metal layer 113a from the metal layer where the first trace 131 is located. The output end of the first switch module 121 is connected to the first end of the first trace 131 through the first metal via 132, and the second end of the first trace 131 is connected to the input end of the second switch module 122 through the second metal via 133.

[0073] In some implementation manners, please refer to Figure 1 As shown, the first trace 131 is disposed on the metal layer 113 adjacent to the bottom metal layer 113a.

[0074] In this embodiment, the metal vias can be equivalent to inductors. When the number of metal layers penetrated by the metal vias is larger, the inductance equivalent to the metal vias is larger, and the resulting loss is also larger. Therefore, in the case of no other performance requirements, it is preferable to set the first trace 131 on the adjacent metal layer of the bottom metal layer 113a, which can not only control the length of the first metal connection structure 130 as much as possible to reduce the loss, but also make the spatial layout more reasonable.

[0075] As an example, please refer to Figure 1 As shown, the substrate 110 may include four metal layers 113. From the upper surface 111 of the substrate to the lower surface 112 of the substrate, the four metal layers 113 are respectively the top metal layer 113b, the first intermediate metal layer 113c, the second intermediate metal layer 113d, and the bottom metal layer 113a. The first trace 131 is located on the second intermediate metal layer 113d closest to the bottom metal layer 113a. The first metal via 132 penetrates the second intermediate metal layer 113d from the bottom metal layer 113a, and the second metal via 133 penetrates the bottom metal layer 113a from the second intermediate metal layer 113d.

[0076] In this embodiment, the first trace 131 is located on the second intermediate metal layer 113d closest to the bottom metal layer 113a, which can shorten the lengths of the first metal via 132 and the second metal via 133 as much as possible to reduce the loss, and the spatial layout is more reasonable, which can effectively avoid interference between the first metal via 132 and the second metal via 133 and other components on the substrate 110.

[0077] It should be noted that in other embodiments, the first trace 131 may also be located on other metal layers.

[0078] In some embodiments, please refer to Figure 2 As shown, the RF front-end module 100 further includes a notch module 140. The notch module 140 is connected between the first switch module 121 and the second switch module 122. The notch module 140 can be used to filter out the harmonics generated by the first switch module 121, avoid the RF signal transmitted to the antenna port being doped with unnecessary harmonic signals, and improve the performance and stability of the RF front-end module 100. As an example, the notch module 140 is used to filter out any harmonic signals such as the second-order harmonic signal and the third-order harmonic generated by the first switch module 121.

[0079] In some embodiments, please refer to Figures 3 to 5As shown, the first metal connection structure 130 further includes a third metal via 134 and a fourth metal via 135. The third metal via 134 penetrates through the metal layer where the first trace 131 is located from the bottom metal layer 113a, and the fourth metal via 135 penetrates through the bottom metal layer 113a from the metal layer where the first trace 131 is located. The output end of the first switch module 121 is connected to the input end of the notch module 140 through the third metal via 134, and the output end of the notch module 140 is connected to the input end of the second switch module 122 through the fourth metal via 135.

[0080] As an implementation, please refer to Figure 3 , the first metal connection structure 130 includes a first trace 131. The output end of the first switch module 121 is connected to the first end of the first trace 131 through the third metal via 134. The second end of the first trace 131 is connected to the input end of the notch module 140, and the output end of the notch module 140 is connected to the input end of the second switch module 122 through the fourth metal via 135.

[0081] As an implementation, please refer to Figure 4 , the first metal connection structure 130 includes a first trace 131. The output end of the first switch module 121 is connected to the input end of the notch module 140 through the third metal via 134. The output end of the notch module 140 is connected to the first end of the first trace 131, and the second end of the first trace 131 is connected to the input end of the second switch module 122 through the fourth metal via 135.

[0082] As an implementation, please refer to Figure 5 , the first metal connection structure 130 includes two first traces 131, which are the first trace 131a and the first trace 131b respectively. The output end of the first switch module 121 is connected to the first end of the first trace 131a through the third metal via 134. The second end of the first trace 131a is connected to the input end of the notch module 140. The output end of the notch module 140 is connected to the first end of the first trace 131b, and the second end of the first trace 131b is connected to the input end of the second switch module 122 through the fourth metal via 135.

[0083] In some implementations, the notch module 140 includes a first surface mount device, which not only has a high Q value (Quality Factor), but also can reduce the space occupied by the notch module 140, thereby further improving the integration and reducing the manufacturing cost.

[0084] In some implementations, please refer to Figures 3 to 5, the notch module 140 is disposed on the upper surface 111 of the substrate. The metal layer 113 located on the upper surface 111 of the substrate is the top metal layer 113b. The first trace 131 is disposed on the top metal layer 113b. The third metal via 134 penetrates through the top metal layer 113b from the bottom metal layer 113a, and the fourth metal via 135 penetrates through the bottom metal layer 113a from the top metal layer 113b.

[0085] In this embodiment, the notch module 140 is disposed on the upper surface 111 of the substrate, which can effectively ensure the signal transmission efficiency of the notch module 140.

[0086] In some embodiments, please refer to Figure 6 , the notch module 140 includes a first inductor L1 and a first capacitor C1 connected in parallel.

[0087] As an embodiment, the notch module 140 includes a first inductor L1 and a first capacitor C1 connected in parallel. The first inductor L1 and the first capacitor C1 are arranged on the upper surface 111 of the substrate in a SMD (Surface-Mounted Device) manner.

[0088] In this embodiment, the first inductor L1 and the first capacitor C1 are arranged on the upper surface 111 of the substrate in a SMD manner. It not only has a high Q value, high integration, and small footprint, can solve the problem that the first inductor L1 with a large inductance value cannot be wound on the substrate 110, but also can achieve a high suppression effect (greater than -30 dB), and the third harmonic suppression effect is better.

[0089] As an embodiment, Figures 3 to 6 The shown radio frequency front-end module 100 can be applicable to the transmission of low-frequency radio frequency signals, and the operating frequency of the low-frequency radio frequency signals can be less than 1000 MHZ. The inductance value range of the first inductor L1 is [0.5 nH, 3 nH], the height range of the first inductor L1 is [0.2 mm, 0.25 mm], and the capacitance value range of the first capacitor C1 is [1 pF, 5 pF].

[0090] In this embodiment, the notch module 140 has a high Q value, high integration, and small footprint. Moreover, the height range of the first inductor L1 is [0.2 mm, 0.25 mm], which can further improve the Q value and reduce the insertion loss.

[0091] Exemplarily, the inductance value of the first inductor L1 can be, but not limited to, 0.5 nH, 1 nH, 1.5 nH, 2 nH, 2.5 nH, or 3 nH, etc.

[0092] Exemplarily, the height range of the first inductor L1 can be, but is not limited to, 0.2 mm, 0.21 mm, 0.22 mm, 0.23 mm, 0.24 mm, 0.25 mm, etc.

[0093] Exemplarily, the capacitance value range of the first capacitor C1 can be, but is not limited to, 1 pF, 2 pF, 3 pF, 4 pF, 5 pF, etc.

[0094] In some embodiments, please refer to Figure 7 , the notch module 140 is disposed on the lower surface 112 of the substrate. The third metal via 134 penetrates the second intermediate metal layer 113d from the bottom metal layer 113a, and the second intermediate metal layer 113d is the metal layer 113 adjacent to the bottom metal layer 113a. The fourth metal via 135 penetrates the bottom metal layer 113a from the metal layer 113 adjacent to the bottom metal layer 113a. The first metal connection structure 130 includes two first traces 131, and the two first traces 131 are respectively the first trace 131c and the first trace 131d. Both the first trace 131c and the first trace 131d are disposed on the metal layer 113 adjacent to the bottom metal layer 113a. The first metal connection structure 130 further includes a fifth metal via 136 and a sixth metal via 137. The fifth metal via 136 penetrates the bottom metal layer 113a from the metal layer 113 adjacent to the bottom metal layer 113a, and the sixth metal via 137 penetrates the metal layer 113 adjacent to the bottom metal layer 113a from the bottom metal layer 113a. The output end of the first switch module 121 is connected to the first end of a first trace 131c through the third metal via 134. The second end of the first trace 131c is connected to the input end of the notch module 140 through the fifth metal via 136. The output end of the notch module 140 is connected to the first end of the first trace 131d through the sixth metal via 137. The second end of the first trace 131d is connected to the input end of the second switch module 122 through the fourth metal via 135.

[0095] In Figure 6 and Figure 7 the shown embodiment, the RF front-end module 100 can be applicable to the transmission of high-frequency RF signals, and the operating frequency of the high-frequency RF signals can be greater than or equal to 1000 MHz.

[0096] As an embodiment, the notch module 140 is disposed on the lower surface 112 of the substrate, and the notch module 140 is integrated in the switch chip 120, further improving the integration degree of the switch chip 120.

[0097] As an embodiment, the notch module 140 is disposed on the lower surface 112 of the substrate, and the notch module 140 includes integrated passive devices disposed on the substrate 110, which can reduce the manufacturing difficulty.

[0098] In some embodiments, please refer to Figure 8 and Figure 9 , the RF front-end module 100 further includes a coupling module 123. The coupling module 123 is disposed on the switch chip 120 and is arranged between the first switch module 121 and the notch module 140.

[0099] In this embodiment, the coupling module 123 can transmit the RF signal output by the first switch module 121 to the detection module for detecting the power of the RF signal output by the first switch module 121. Moreover, the first switch module 121, the second switch module 122, and the coupling module 123 are integrated on the same switch chip 120, further improving the integration degree.

[0100] As an embodiment, please refer to Figure 8 and Figure 9 , the input end of the coupling module 123 is connected to the output end of the first switch module 121, the output end of the coupling module 123 is connected to the input end of the notch module 140, the coupling end of the coupling module 123 is configured to be connected to the input end of the detection module, and the isolation end of the coupling module 123 is configured to be grounded.

[0101] As an example, please refer to Figure 10 , the output end of the first switch module 121 is connected to the input end of the coupling module 123, the output end of the coupling module 123 is connected to the input end of the notch module 140 through the third metal via 134. The notch module 140 and the first trace 131 are disposed on the upper surface 111 of the substrate. The output end of the notch module 140 is connected to the first end of the first trace 131, and the second end of the first trace 131 is connected to the input end of the second switch module 122 through the fourth metal via 135.

[0102] In this embodiment, disposing the notch module 140 on the upper surface 111 of the substrate can effectively ensure the signal transmission efficiency of the notch module 140. The coupling module 123 can not only be used for signal coupling and transmission, but also the coupling end of the coupling module 123 can be connected to the input end of the detection module to monitor the power of the RF signal output by the first switch module 121 without interfering with the normal transmission of the RF signal.

[0103] It should be noted that in other embodiments, the input end of the notch module 140 may also be connected to a first trace 131. In other embodiments, the notch module 140 may be disposed on the lower surface 112 of the substrate.

[0104] In some embodiments, please refer to Figure 11, the RF front-end module 100 further includes a signal input port 151 and a filter matching module 160. The signal input port 151 is connected to the input end of the first switch module 121, and the filter matching module 160 is disposed on the connection path between the first switch module 121 and the signal input port 151. Among them, please refer to Figure 12 , the filter matching module 160 is disposed on the upper surface 111 of the substrate, and the filter matching module 160 includes a second surface mount device.

[0105] In this embodiment, the filter matching module 160 is disposed on the upper surface 111 of the substrate in an SMD manner, which not only has a high Q value, high integration, and small footprint, but also has a better harmonic suppression effect. In addition, when the filter matching module 160 includes an inductor with a relatively large inductance value, disposing the filter matching module 160 on the upper surface 111 of the substrate in an SMD manner can solve the problem that an inductor with a relatively large inductance value cannot be wound on the substrate 110.

[0106] As an embodiment, please refer to Figure 12 , the filter matching module 160 and the first switch module 121 are connected through a second metal connection structure 170. The second metal connection structure 170 includes a second trace 171 and a seventh metal via 172. The second trace 171 is disposed on the top metal layer 113b located on the upper surface 111 of the substrate. The seventh metal via 172 penetrates the bottom metal layer 113a from the top metal layer 113b. The first end of the second trace 171 is connected to the filter matching module 160, and the second end of the second trace 171 is connected to the first switch module 121 through the seventh metal via 172.

[0107] As an embodiment, please refer to Figure 12 , the signal input port 151 is disposed on the lower surface 112 of the substrate, which can further improve the utilization rate of the lower surface 112 of the substrate, improve the integration, and reduce the volume.

[0108] As an example, please refer to Figure 12 , the signal input port 151 is disposed on the lower surface 112 of the substrate. The signal input port 151 can receive the RF signal output by the PA (Power Amplifier). The signal input port 151 is connected to the input end of the filter matching module 160 through an eighth metal via 180. The eighth metal via 180 penetrates the top metal layer 113b from the bottom metal layer 113a. The output end of the filter matching module 160 is connected to the first end of the second trace 171. The second end of the second trace 171 is connected to the input end of the first switch module 121 through the seventh metal via 172, thereby effectively filtering the signal input through the signal input port 151.

[0109] In some examples, the radio frequency signal input at the signal input port 151 is a high-power low-frequency signal. For example, the operating frequency of the radio frequency signal can be less than or equal to 915 MHz, and the filtering and matching module 160 can filter out signals with a frequency above 915 MHz.

[0110] As an implementation, please refer to Figure 13 , the filtering and matching module 160 includes a first filtering circuit 161 and a second filtering circuit 162. The first filtering circuit 161 and the second filtering circuit 162 are sequentially connected to the connection path between the signal input port 151 and the first switch module 121. The first filtering circuit 161 includes a second capacitor C2 and a second inductor L2. One end of the second capacitor C2 is connected to the connection path between the signal input port 151 and the first switch module 121, and the other end of the second capacitor C2 is grounded through the second inductor L2. The second filtering circuit 162 includes a third capacitor C3 and a third inductor L3. The third inductor L3 is connected between the first filtering circuit 161 and the first switch module 121. One end of the third capacitor C3 is connected between the third inductor L3 and the first switch module 121, and the other end of the third capacitor C3 is grounded.

[0111] In this implementation, the first filtering circuit 161 can be used to filter out second-order harmonics, and the second filtering circuit 162 can be used to filter out harmonics above the second order, so as to filter out harmonics fully and effectively.

[0112] Exemplarily, the inductance value range of the second inductor L2 is [0.5 nH, 3 nH]. For example, the inductance value of the second inductor L2 can be, but is not limited to, 0.5 nH, 1 nH, 1.5 nH, 2 nH, 2.5 nH, or 3 nH, etc.

[0113] Exemplarily, the capacitance value range of the second capacitor C2 is [1 pF, 5 pF]. For example, the capacitance value of the second capacitor C2 can be, but is not limited to, 1 pF, 2 pF, 3 pF, 4 pF, or 5 pF, etc.

[0114] Exemplarily, the inductance value range of the third inductor L3 is [5 nH, 9 nH]. For example, the inductance value of the third inductor L3 can be, but is not limited to, 5 nH, 5.5 nH, 6 nH, 6.5 nH, 7 nH, 7.5 nH, 8 nH, 8.5 nH, or 9 nH, etc.

[0115] Exemplarily, the capacitance value range of the third capacitor C3 is [2 pF, 6 pF]. For example, the capacitance value of the third capacitor C3 can be, but is not limited to, 2 pF, 3 pF, 4 pF, 5 pF, or 6 pF, etc.

[0116] As an implementation, please refer to Figure 13The second filtering circuit 162 may further include a fourth inductor L4, which is connected between the third capacitor C3 and the first switch module 121 and may be used to improve impedance.

[0117] In some embodiments, please refer to Figure 14 The RF front-end module 100 includes a switch chip 120, a notch module 140 and a filter matching module 160. Without interfering with other components, the switch chip 120 and the notch module 140 are as close as possible, and the switch chip 120 and the filter matching module 160 are as close as possible, which can not only further ensure the integration, but also shorten the length of the first metal connection structure 130 and the second metal connection structure 170 as much as possible to reduce losses.

[0118] Please refer to Figure 14 The projection of the switch chip 120 on the upper surface 111 of the substrate is a first projection 120a, the projection of the notch module 140 on the upper surface 111 of the substrate is a second projection 140a, and the projection of the filter matching module 160 on the upper surface 111 of the substrate is a third projection 160a.

[0119] As an example, the first projection 120a may at least partially overlap with the second projection 140a. Figure 14 , the first projection 120a is close to the second projection 140a.

[0120] As an example, the first projection 120a may at least partially overlap with the third projection 160a. Figure 14 , the first projection 120a is close to the third projection 160a.

[0121] In some embodiments, the first switch module 121 is an antenna switch module (ASM), and the second switch module 122 is a double-pole double-throw (DPDT) switch module. The antenna switch module and the double-pole double-throw switch module are sequentially arranged on the radio frequency signal transmission path.

[0122] As an implementation, please refer to Figure 15, the input end of the first switch module 121 can be connected to the output end of a power amplifier (PA) 191 to receive the radio frequency signal output by the PA. The input end of the first switch module 121 can also be connected to the input port of a low noise amplifier to transmit the radio frequency signal received from the antenna port to the low noise amplifier for amplification. The first input end of the second switch module 122 is connected to the output end of the first switch module 121, the first output end of the second switch module 122 is connected to the first antenna port 152, and the second output end of the second switch module 122 is connected to the second antenna port 153.

[0123] In some embodiments, please refer to Figure 16 , the radio frequency front-end module 100 further includes a signal transmission module 190, and the signal transmission module 190 is disposed on the upper surface 111 of the substrate.

[0124] In this embodiment, the signal transmission module 190 with high signal transmission efficiency can be disposed on the upper surface 111 of the substrate, so as to effectively ensure the signal transmission efficiency of the signal transmission module 190, and further ensure the performance and reliability of the radio frequency front-end module 100.

[0125] As an embodiment, the signal transmission module 190 may include at least one of a power amplifier 191, a filter, and a third surface mount device. It can be understood that in other embodiments, the signal transmission module 190 may further include other devices with high signal transmission efficiency, which can be set according to actual situations and will not be elaborated here.

[0126] In some embodiments, devices with relatively low signal transmission efficiency, such as a low noise amplifier (LNA), may also be disposed on the lower surface 112 of the substrate.

[0127] The above are only the embodiments of the present application. It should be noted here that for those of ordinary skill in the art, without departing from the creative concept of the present application, improvements can still be made, but these all fall within the protection scope of the present application.

Claims

1. A radio frequency front-end module, characterized in that, Comprising: A substrate having a substrate upper surface and a substrate lower surface disposed opposite to each other, and a plurality of metal layers stacked in sequence from the substrate upper surface to the substrate lower surface; And A switching chip disposed on the substrate lower surface, including a first switching module and a second switching module, the first switching module and the second switching module are connected by a first metal connection structure, the first metal connection structure includes a first trace, and the first trace is disposed on any one of the remaining metal layers other than the bottom metal layer, and the bottom metal layer is the metal layer located on the substrate lower surface.

2. The RF front-end module according to claim 1, wherein The first metal connection structure further includes a first metal via hole penetrating through the remaining any one of the metal layers from the bottom metal layer and a second metal via hole penetrating through the bottom metal layer from the remaining any one of the metal layers; The output end of the first switching module is connected to the first end of the first trace through the first metal via hole, and the second end of the first trace is connected to the input end of the second switching module through the second metal via hole.

3. The RF front-end module according to claim 1, wherein The first trace is disposed on the metal layer adjacent to the bottom metal layer.

4. The RF front-end module according to claim 1, wherein The RF front-end module further includes a notch module, and the notch module is connected between the first switching module and the second switching module; The first metal connection structure further includes a third metal via hole penetrating through the remaining any one of the metal layers from the bottom metal layer and a fourth metal via hole penetrating through the bottom metal layer from the remaining any one of the metal layers, the output end of the first switching module is connected to the input end of the notch module through the third metal via hole, and the output end of the notch module is connected to the input end of the second switching module through the fourth metal via hole; The first metal connection structure includes one first trace, the input end of the notch module is connected to the third metal via hole through the first trace, or the output end of the notch module is connected to the fourth metal via hole through the first trace; or, the first metal connection structure includes two first traces, the input end of the notch module is connected to the third metal via hole through one of the first traces, and the output end of the notch module is connected to the fourth metal via hole through the other first trace.

5. The RF front-end module according to claim 4, wherein The notch module is disposed on the substrate upper surface; The metal layer located on the substrate upper surface is the top metal layer, and the first trace is disposed on the top metal layer.

6. The RF front-end module according to claim 5, wherein The notch module includes a first surface mount device.

7. The RF front-end module according to claim 5 or 6, wherein The notch module includes a first inductor and a first capacitor connected in parallel.

8. The RF front-end module according to claim 7, wherein The inductance value range of the first inductor is [0.5 nH, 3 nH], and the capacitance value range of the first capacitor is [1 pF, 5 pF].

9. The radio frequency front-end module according to claim 7, wherein The height range of the first inductor is [0.2 mm, 0.25 mm].

10. The radio frequency front-end module according to claim 4, wherein, The notch module is disposed on the substrate lower surface; The third metal via penetrates from the bottom metal layer through the metal layer adjacent to the bottom metal layer, the fourth metal via penetrates from the metal layer adjacent to the bottom metal layer through the bottom metal layer, the first metal connection structure includes two first traces disposed on the metal layer adjacent to the bottom metal layer, the first metal connection structure further includes a fifth metal via and a sixth metal via, the fifth metal via penetrates from the metal layer adjacent to the bottom metal layer through the bottom metal layer, the sixth metal via penetrates from the bottom metal layer through the metal layer adjacent to the bottom metal layer, the output end of the first switch module is connected to the input end of the notch module through the third metal via, one of the first traces, and the fifth metal via in sequence, and the output end of the notch module is connected to the input end of the second switch module through the sixth metal via, the other first trace, and the fourth metal via in sequence.

11. The RF front-end module according to claim 10, wherein, The notch module includes an integrated passive device disposed on the substrate, or the notch module is integrated in the switch chip.

12. The radio frequency front-end module according to claim 4, wherein The RF front-end module further includes a coupling module, the coupling module is disposed on the switch chip, and the coupling module is disposed between the first switch module and the notch module; The input end of the coupling module is connected to the output end of the first switch module, the output end of the coupling module is connected to the input end of the notch module through the third metal via, the coupling end of the coupling module is configured to be connected to the input end of the detection module, and the isolation end of the coupling module is configured to be grounded.

13. The RF front-end module according to claim 1, wherein The RF front-end module further includes: a signal input port connected to the input end of the first switch module; and a filter matching module disposed on the upper surface of the substrate and on the connection path between the first switch module and the signal input port, and the filter matching module includes a second surface mount device.

14. The RF front-end module according to claim 13, wherein The filter matching module and the first switch module are connected through a second metal connection structure, the second metal connection structure includes a second trace and a seventh metal via, the second trace is disposed on the top metal layer located on the upper surface of the substrate, the seventh metal via penetrates from the top metal layer through the bottom metal layer, the first end of the second trace is connected to the filter matching module, and the second end of the second trace is connected to the first switch module through the seventh metal via.

15. The RF front-end module according to claim 13, characterized in that, The filter matching module includes a first filter circuit and a second filter circuit connected in sequence on the connection path; The first filter circuit includes a second capacitor and a second inductor, one end of the second capacitor is connected to the connection path, and the other end of the second capacitor is grounded through the second inductor; The second filter circuit includes a third capacitor and a third inductor, the third inductor is connected between the first filter circuit and the first switch module, one end of the third capacitor is connected between the third inductor and the first switch module, and the other end of the third capacitor is grounded.

16. The radio frequency front-end module according to claim 15, wherein, The inductance value range of the second inductor is [0.5 nH, 3 nH], and the capacitance value range of the second capacitor is [1 pF, 5 pF].

17. The radio frequency front-end module according to claim 15, wherein The inductance value range of the third inductor is [5 nH, 9 nH], and the capacitance value range of the third capacitor is [2 pF, 6 pF].

18. The radio frequency front-end module according to claim 13, wherein The RF front-end module further includes a notch module, and the notch module is connected between the first switch module and the second switch module; The projection of the switch chip on the upper surface of the substrate is a first projection, the projection of the notch module on the upper surface of the substrate is a second projection, and the projection of the filter matching module on the upper surface of the substrate is a third projection; At least a part of the first projection coincides with the second projection, or the first projection is close to the second projection; and / or at least a part of the first projection coincides with the third projection, or the first projection is close to the third projection.

19. The radio frequency front-end module according to claim 1, wherein, The first switch module is an antenna switch module, the second switch module is a double-pole double-throw switch module, and the antenna switch module and the double-pole double-throw switch module are sequentially arranged on the RF signal transmission path.

20. The radio frequency front-end module according to claim 1, wherein The RF front-end module further includes a signal transmission module, and the signal transmission module is arranged on the upper surface of the substrate, wherein the signal transmission module includes at least one of a power amplifier, a filter, and a third surface mount device.

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