Packaging structure for improving reliability of silicon bridge and manufacturing method thereof
By covering the insulating layer and indium layer on the first metal column of the silicon bridge, the reliability and heat dissipation performance of the silicon bridge are enhanced, and the problem of easy damage in the plastic sealing process is solved, and reliable interconnection of high-density chip integration is achieved.
Patent Information
- Application Number
- CN202411711948.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-27
- Publication Date
- 2025-07-08
AI Technical Summary
In the existing chip packaging technology, silicon bridges are prone to cracks and tilts at the bottom of Cu columns during the plastic packaging process, resulting in poor interconnection reliability and difficult to meet the high-performance requirements of modern integrated circuits.
The first metal column of the silicon bridge is coated with the first insulating layer and the indium layer to enhance its binding force with the silicon substrate and the transition layer, and to protect it through the plastic sealing layer, and use a high thermal conductivity indium layer to improve heat dissipation problems.
It improves the reliability of the silicon bridge, prevents Cu columns from collapsing or breaking in the plastic sealing process, enhances the interconnection reliability between chips, and improves the heat dissipation performance of the silicon bridge.
Smart Images
Figure CN120280435A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and particularly to a packaging structure for improving the reliability of a silicon bridge and a manufacturing method thereof. Background Art
[0002] The current development of integrated circuits is restricted by the "four walls" of the "memory wall", "area wall", "power consumption wall", and "function wall". When the chip manufacturing process is the same, more transistors can be integrated by increasing the chip area, thereby improving the chip performance. However, the chip size is limited by the mask limit of the lithography machine. To break through the mask area limit, the cost is extremely high. Currently, integrating multiple chips through advanced packaging is a low-cost solution to break through the chip "area wall".
[0003] Integrating multiple chips at high density requires the wiring of the connection between chips to have a small line width and line pitch. In the existing chip packaging technology, the interconnection between chips is usually achieved by means of a lead frame or a redistribution layer (RDL), etc., but there are problems of low interconnection density and slow signal transmission rate, and it is difficult to meet the high-performance requirements of modern integrated circuits. For example, the maximum line width / line pitch of the existing RDL can only reach 2um / 2um, while the silicon bridge can replace part of the interconnection function of the RDL to achieve high-density integration of multiple chips.
[0004] In order to achieve the interconnection between chips through a silicon bridge, it is necessary to pre-fabricate high Cu pillars on the surface of the silicon bridge, then embed the silicon bridge in the encapsulant, and thin it to expose the Cu pillars. However, the too-high Cu pillars are impacted by the encapsulant during the encapsulation process, and cracks are easily formed at the bottom of the Cu pillars, resulting in the inclination or even collapse of the Cu pillars. Summary of the Invention
[0005] In view of some or all of the problems in the prior art, the present invention provides a packaging structure for improving the reliability of a silicon bridge, and the structure includes:
[0006] A substrate;
[0007] An adhesion layer disposed on the upper surface of the substrate;
[0008] A silicon bridge disposed on the upper surface of the adhesion layer, the silicon bridge includes a silicon substrate, a first metal pillar, a first insulating layer, and an indium layer, the first insulating layer covers the side surface of the first metal pillar, and the indium layer is disposed on the upper surface of the first insulating layer;
[0009] A second metal pillar disposed on the upper surface of the adhesion layer;
[0010] A plastic encapsulation layer that plastic-encapsulates and covers the bonding layer, the silicon bridge, and the second metal pillar, with the upper surfaces of the first metal pillar and the second metal pillar exposed from the plastic encapsulation layer.
[0011] Further, the bonding layer includes multiple dielectric layers and / or multiple metal layers.
[0012] Further, the silicon bridge further includes a transition layer disposed on the upper surface of the silicon substrate;
[0013] The transition layer includes multiple dielectric layers and / or multiple metal layers.
[0014] Further, the material of the first metal pillar includes one or more of copper, tungsten, aluminum, and titanium; and / or
[0015] The material of the second metal pillar includes one or more of copper, tungsten, aluminum, and titanium.
[0016] Further, the material of the first insulating layer includes one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, zirconium oxide, tantalum oxide, and lanthanum oxide.
[0017] The present invention also provides a manufacturing method for a packaging structure that improves the reliability of a silicon bridge. The method includes the following steps:
[0018] On the upper surface of the silicon substrate, fabricate a transition layer and a first metal pillar;
[0019] Fabricate a first insulating layer that covers the first metal pillar;
[0020] Fabricate an indium layer that covers the first insulating layer to form a silicon bridge;
[0021] On the upper surface of the substrate, fabricate a bonding layer and a second metal pillar, and attach the silicon bridge to the upper surface of the substrate;
[0022] Fabricate a plastic encapsulation layer to plastic-encapsulate and cover the bonding layer, the silicon bridge, and the second metal pillar;
[0023] Thin the plastic encapsulation layer to expose the upper surfaces of the first metal pillar and the second metal pillar, forming a packaging structure that improves the reliability of the silicon bridge.
[0024] Further, the transition layer includes multiple dielectric layers and / or multiple metal layers.
[0025] Further, the material of the first metal pillar includes one or more of copper, tungsten, aluminum, and titanium; and / or
[0026] The material of the second metal pillar includes one or more of copper, tungsten, aluminum, or titanium.
[0027] Furthermore, the substrate is a glass substrate, a silicon substrate, or a metal substrate.
[0028] Furthermore, the plastic encapsulation is by injection molding; and / or
[0029] The material of the plastic encapsulation layer is epoxy resin.
[0030] The technical solution provided by the present invention has the following beneficial effects:
[0031] 1. The packaging structure for improving the reliability of the silicon bridge provided by the present invention wraps the first metal pillar of the silicon bridge with the first insulating layer and the indium layer, and protects the bottom of the first metal pillar, enhancing the bonding force between the first metal pillar and the silicon substrate and the transition layer, preventing the first metal pillar from collapsing or even breaking under the impact of the plastic encapsulation process, and enhancing the reliability of the silicon bridge.
[0032] 2. The packaging structure for improving the reliability of the silicon bridge provided by the present invention fabricates an indium layer on the first metal pillar of the silicon bridge. Since the thermal conductivity of the indium layer is much greater than that of the plastic encapsulation layer, the heat dissipation problem of the embedded silicon bridge can be significantly improved. BRIEF DESCRIPTION OF THE DRAWINGS
[0033] To further clarify the above and other advantages and features of the embodiments of the present invention, more specific descriptions of the embodiments of the present invention will be presented with reference to the drawings. It can be understood that these drawings only depict typical embodiments of the present invention and will not be considered as limiting its scope. In the drawings, for clarity, the same or corresponding components will be denoted by the same or similar reference numerals.
[0034] Figure 1 Shows a schematic diagram of a packaging structure for improving the reliability of a silicon bridge according to an embodiment of the present invention;
[0035] Figure 2 Shows a schematic flow diagram of a manufacturing method of a packaging structure for improving the reliability of a silicon bridge according to an embodiment of the present invention; and
[0036] Figures 3a - 3f Shows a schematic cross-sectional view of the process of forming a packaging structure for improving the reliability of a silicon bridge according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0037] In the following description, the present invention is described with reference to various embodiments. However, those skilled in the art will recognize that the embodiments can be implemented without one or more specific details or in combination with other alternative and / or additional methods, materials, or components. In other cases, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring the inventive points of the present invention. Similarly, for purposes of explanation, specific quantities, materials, and configurations are set forth in order to provide a thorough understanding of the embodiments of the present invention. However, the present invention is not limited to these specific details. In addition, it should be understood that the embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.
[0038] In this specification, the reference to "an embodiment" or "the embodiment" means that the specific features, structures, or characteristics described in connection with that embodiment are included in at least one embodiment of the present invention. The phrase "in an embodiment" that appears throughout this specification does not necessarily all refer to the same embodiment.
[0039] In this specification, unless otherwise specified, "disposed on", "disposed above", and "disposed thereon" do not exclude the presence of an intermediate between the two. In addition, "disposed on or above" only represents the relative positional relationship between two components, and in certain cases, such as after reversing the product direction, it can also be converted to "disposed under or below", and vice versa.
[0040] In this specification, unless otherwise specified, "upper surface", "lower surface", and "side surface" are only used to describe and distinguish the surfaces of the same component.
[0041] In this specification, unless otherwise specified, the quantifiers "a" and "one" do not exclude the scenario of multiple elements, and the quantifiers "multiple" and "many" refer to one or more than one element.
[0042] It should be noted that the embodiments of the present invention describe the method steps in a specific order. However, this is only for the purpose of explaining the specific embodiment and does not limit the order of the steps. On the contrary, in different embodiments of the present invention, the order of the steps can be adjusted according to actual requirements.
[0043] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
[0044] Figure 1 A schematic diagram of a packaging structure for improving the reliability of a silicon bridge according to an embodiment of the present invention is shown. As Figure 1As shown, the packaging structure for improving the reliability of the silicon bridge includes a substrate 106, an adhesion layer 107, second metal posts 108, a molding compound layer 109, and a silicon bridge. The silicon bridge includes a silicon substrate 101, a transition layer 102, first metal posts 103, a first insulating layer 104, and an indium layer 105.
[0045] In one embodiment of the present invention, the substrate 106 can be a glass substrate, a silicon substrate, a metal substrate, or a substrate of other materials. In one embodiment of the present invention, the adhesion layer 107 is disposed on the upper surface of the substrate 106. The adhesion layer 107 can include multiple dielectric layers and / or multiple metal layers. The metal layers can penetrate the adhesion layer 107, and the second metal posts 108 can be interconnected through the metal layers in the adhesion layer 107. In one embodiment of the present invention, the material of the second metal posts 108 can include one or more of copper, tungsten, aluminum, and titanium.
[0046] As Figure 1 shown, the silicon bridge is disposed on the upper surface of the adhesion layer 107. The transition layer 102 is disposed on the upper surface of the silicon substrate 101. The first insulating layer 104 covers the sides of the first metal posts 103, and the indium layer 105 is disposed on the upper surface of the first insulating layer 104. In one embodiment of the present invention, the transition layer 102 can include multiple dielectric layers and / or multiple metal layers. The metal layers can penetrate the transition layer 102, and the first metal posts 103 can be interconnected through the metal layers in the transition layer 102. In one embodiment of the present invention, the material of the first metal posts 103 can include one or more of copper, tungsten, aluminum, and titanium. The first insulating layer 104 covers the transition layer 102 between the first metal posts 103. In one embodiment of the present invention, the material of the first insulating layer 104 can include one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, zirconium oxide, tantalum oxide, and lanthanum oxide.
[0047] The molding compound layer 109 molds and covers the adhesion layer 107, the silicon bridge, and the second metal posts 108. The molding compound layer 109 exposes the upper surfaces of the first metal posts 103 and the second metal posts 108. In one embodiment of the present invention, the material of the molding compound layer 109 is epoxy resin.
[0048] In an embodiment of the present invention, on a packaging structure for improving the reliability of a silicon bridge, multiple chips can also be attached. The multiple chips can be electrically connected through a first metal pillar 103 and a second metal pillar 108. The multiple chips can include multiple identical chips, or multiple chips of the same type, or multiple chips of different types. In an embodiment of the present invention, the chips can be logic chips such as CPUs, DSPs, GPUs, FPGAs, etc., or memory chips such as DRAMs, Flashs, HBMs, etc., or other types of chips such as SOCs or sensors (such as MEMS sensors, etc.).
[0049] The packaging structure for improving the reliability of the silicon bridge provided by the present invention wraps the first metal pillar of the silicon bridge with a first insulating layer and an indium layer, and protects the bottom of the first metal pillar, enhancing the bonding force between the first metal pillar and the silicon substrate and the transition layer, preventing the first metal pillar from collapsing or even breaking under the impact of the plastic encapsulation process, and enhancing the reliability of the silicon bridge; since the thermal conductivity of the indium layer is much greater than that of the plastic encapsulation layer, the heat dissipation problem of the embedded silicon bridge can be significantly improved.
[0050] Figure 2 The flowchart shows the manufacturing method of a packaging structure for improving the reliability of a silicon bridge according to an embodiment of the present invention. Figures 3a - 3f The cross-sectional view shows the process of forming a packaging structure for improving the reliability of a silicon bridge according to an embodiment of the present invention.
[0051] Next, in conjunction with Figure 2 and Figures 3a - 3f A manufacturing method of a packaging structure for improving the reliability of a silicon bridge according to the present invention will be described.
[0052] First, on the upper surface of the silicon substrate 101, a transition layer 102 and a first metal pillar 103 are fabricated, as Figure 3a shown. In an embodiment of the present invention, in an embodiment of the present invention, the transition layer 102 can include multiple dielectric layers and / or multiple metal layers. The metal layers can penetrate through the transition layer 102, and the first metal pillars 103 can be interconnected through the metal layers in the transition layer 102. In an embodiment of the present invention, the material of the first metal pillar 103 can include one or more of copper, tungsten, aluminum, or titanium.
[0053] Next, a first insulating layer 104 is fabricated. The first insulating layer 104 wraps the first metal pillar 103, as Figure 3bAs shown. In an embodiment of the present invention, the material of the first insulating layer 104 may include one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, zirconium oxide, tantalum oxide, and lanthanum oxide. In an embodiment of the present invention, the first insulating layer 104 may be fabricated by plasma enhanced chemical vapor deposition (PECVD).
[0054] Next, an indium layer 105 is fabricated. The indium layer 105 coats the first insulating layer 104 to form a silicon bridge, as Figure 3c shown. In an embodiment of the present invention, the indium layer 105 may be fabricated by physical vapor deposition (PVD).
[0055] Next, on the upper surface of the substrate 106, an adhesion layer 107 and a second metal pillar 108 are fabricated, and the silicon bridge is mounted on the upper surface of the substrate 106, as Figure 3d shown. In an embodiment of the present invention, the adhesion layer 107 may include multiple dielectric layers and / or multiple metal layers. The metal layer may penetrate through the adhesion layer 107, and the second metal pillars 108 may be interconnected through the metal layers in the adhesion layer 107. In an embodiment of the present invention, the material of the second metal pillar 108 may include one or more of copper, tungsten, aluminum, and titanium.
[0056] Next, a molding layer 109 is fabricated to mold and coat the adhesion layer 107, the silicon bridge, and the second metal pillar 108, as Figure 3e shown. In an embodiment of the present invention, the molding may be injection molding; the material of the molding layer 109 may be epoxy resin.
[0057] Finally, the molding layer 109 is thinned to expose the upper surfaces of the first metal pillar 103 and the second metal pillar 108, forming a packaging structure that improves the reliability of the silicon bridge.
[0058] Although the embodiments of the present invention have been described above, it should be understood that they are presented only as examples and not as limitations. It will be apparent to those skilled in the relevant art that various combinations, variations, and changes can be made thereto without departing from the spirit and scope of the present invention. Therefore, the width and scope of the present invention disclosed herein should not be limited by the exemplary embodiments disclosed above, but should be defined only by the appended claims and their equivalents.
Claims
1. A packaging structure for improving the reliability of a silicon bridge, characterized in that, Comprising: A substrate; An adhering layer disposed on the upper surface of the substrate; A silicon bridge disposed on the upper surface of the adhering layer, the silicon bridge including a silicon substrate, a first metal pillar, a first insulating layer, and an indium layer, the first insulating layer covering the side surface of the first metal pillar, and the indium layer disposed on the upper surface of the first insulating layer; A second metal pillar disposed on the upper surface of the adhering layer; A plastic encapsulation layer that plastic-encapsulates and covers the adhering layer, the silicon bridge, and the second metal pillar, and the plastic encapsulation layer exposes the upper surfaces of the first metal pillar and the second metal pillar.
2. The encapsulation structure for improving the reliability of a silicon bridge according to claim 1, wherein The adhering layer includes a plurality of dielectric layers and / or a plurality of metal layers.
3. The encapsulation structure for improving the reliability of a silicon bridge according to claim 1, wherein The silicon bridge further includes a transition layer disposed on the upper surface of the silicon substrate; The transition layer includes a plurality of dielectric layers and / or a plurality of metal layers.
4. The encapsulation structure for improving the reliability of a silicon bridge according to claim 1, wherein The material of the first metal pillar includes one or more of copper, tungsten, aluminum, or titanium; and / or The material of the second metal pillar includes one or more of copper, tungsten, aluminum, or titanium.
5. The encapsulation structure for improving the reliability of a silicon bridge according to claim 1, wherein The material of the first insulating layer includes one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, zirconium oxide, tantalum oxide, or lanthanum oxide.
6. A manufacturing method of a packaging structure for improving the reliability of a silicon bridge, characterized in that Including the following steps: On the upper surface of the silicon substrate, fabricate a transition layer and a first metal pillar; Fabricate a first insulating layer that covers the first metal pillar; Fabricate an indium layer that covers the first insulating layer to form a silicon bridge; On the upper surface of the substrate, fabricate an adhering layer and a second metal pillar, and mount the silicon bridge on the upper surface of the substrate; Fabricate a plastic encapsulation layer to plastic-encapsulate and cover the adhering layer, the silicon bridge, and the second metal pillar; Thin the plastic encapsulation layer to expose the upper surfaces of the first metal pillar and the second metal pillar, thereby forming an encapsulation structure for improving the reliability of a silicon bridge.
7. The manufacturing method of the encapsulation structure for improving the reliability of a silicon bridge according to claim 6, wherein The transition layer includes a plurality of dielectric layers and / or a plurality of metal layers.
8. The manufacturing method of the encapsulation structure for improving the reliability of a silicon bridge according to claim 6, wherein The material of the first metal pillar includes one or more of copper, tungsten, aluminum, or titanium; and / or The material of the second metal pillar includes one or more of copper, tungsten, aluminum, or titanium.
9. The manufacturing method of the encapsulation structure for improving the reliability of a silicon bridge according to claim 6, wherein The substrate is a glass substrate, a silicon substrate, or a metal substrate.
10. The manufacturing method of the encapsulation structure for improving the reliability of a silicon bridge according to claim 6, wherein The plastic encapsulation is injection molding; and / or The material of the plastic encapsulation layer is epoxy resin.