Composite electrode, preparation method thereof and photoelectric device

Abstract

The invention relates to the technical field of photoelectricity, in particular to a composite electrode, a preparation method of the composite electrode and a photoelectric device, and the composite electrode comprises a seed layer and a conductive layer which are arranged in a stacked mode. The seed layer comprises a first sub-seed layer, and the first sub-seed layer is a discontinuous seed layer. The conductive layer in the composite electrode is good in continuity, high in transmittance and low in sheet resistance.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technologies, and particularly to a composite electrode, a preparation method thereof, and an optoelectronic device. Background Art

[0002] Currently, the electrodes of optoelectronic devices are generally made of metal conductive materials. However, since there is a threshold thickness when forming the electrodes, when the thickness is lower than the threshold thickness, it is easy to cause the electrodes to be in a discontinuous thin film form, thereby reducing the electrical and optical transmission performance of the electrodes. Summary of the Invention

[0003] Based on this, the present application provides a composite electrode, a preparation method thereof, and an optoelectronic device.

[0004] In order to solve the above technical problems, the embodiments of the present application provide a composite electrode, adopting the following technical solutions:

[0005] A composite electrode, the composite electrode includes a seed layer and a conductive layer which are stacked;

[0006] The seed layer includes a first sub-seed layer, and the first sub-seed layer is a discontinuous seed layer.

[0007] Further, the first sub-seed layer includes a plurality of island-shaped units arranged at intervals; and / or,

[0008] The seed layer further includes a second sub-seed layer and a third sub-seed layer, the third sub-seed layer is arranged close to the conductive layer, and the first sub-seed layer is arranged between the second sub-seed layer and the third sub-seed layer.

[0009] Further, the average height of the island-shaped units is 0.3 - 3 nm; and / or,

[0010] The average diameter of the island-shaped units is 0.03 - 30 μm; and / or,

[0011] The interval between adjacent island-shaped units is 1 - 200 μm; and / or,

[0012] The thickness of the second sub-seed layer is 0.3 - 20 nm; and / or,

[0013] The thickness of the third sub-seed layer is 0.3 - 5 nm; and / or,

[0014] The thickness of the third sub-seed layer is greater than or equal to the thickness of the first sub-seed layer; and / or,

[0015] The sheet resistance of the second sub-seed layer is 0.1 - 100 Ω / □; and / or,

[0016] The sheet resistance of the third sub-seed layer is 0.1 to 100 Ω / sq; and / or,

[0017] The mobility of the second sub-seed layer is 5 to 400 cm 2 / (V·s); and / or,

[0018] The mobility of the third sub-seed layer is 5 to 400 cm 2 / (V·s); and / or,

[0019] Optionally, the second sub-seed layer and the third sub-seed layer are made of the same material; and / or,

[0020] The materials of the second sub-seed layer and the third sub-seed layer are independently selected from at least one of metal oxides, metals, and organic conductive materials;

[0021] Wherein, the metal compound includes one or more of doped metal oxides, undoped metal oxides, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials;

[0022] Optionally, the metal oxides include one or more of MoO3, ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, NbO, V2O5, ZnAl2O4, ZnGa2O4, ZnIn2O4, WO3; the doping elements in the doped metal oxides include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn; the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS; the IIIA-VA group semiconductor materials include one or more of InP, GaP; the IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS;

[0023] Optionally, the metal is selected from at least one of aluminum, copper, germanium, silver, platinum, and gold;

[0024] Optionally, the organic conductive material is selected from at least one of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, doped graphene, undoped graphene, and C60.

[0025] Furthermore, the thickness of the conductive layer is 18 - 25 nm; and / or,

[0026] the average thickness of the first sub-seed layer is 0.3 - 3 nm; and / or,

[0027] the transmittance of the first sub-seed layer is 80 - 100%; and / or,

[0028] the refractive index of the first sub-seed layer is 1.7 - 2.5; and / or,

[0029] the materials of the conductive layer and the first sub-seed layer are independently selected from at least one of silver, gold, aluminum, copper, and platinum; and / or,

[0030] the material of the first sub-seed layer is the same as that of the conductive layer.

[0031] Furthermore, the composite electrode further includes a dielectric layer laminated on the conductive layer;

[0032] Optionally, the thickness of the dielectric layer is 10 - 100 nm; and / or,

[0033] the transmittance of the dielectric layer is 80 - 100%; and / or,

[0034] the refractive index of the dielectric layer is 1.7 - 2.5; and / or,

[0035] Optionally, the material of the dielectric layer is selected from at least one of metal oxides, metals, and organic conductive materials;

[0036] wherein, the metal compound includes one or more of doped metal oxides, undoped metal oxides, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials;

[0037] Optionally, the metal oxides include one or more of MoO3, ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, NbO, V2O5, ZnAl2O4, ZnGa2O4, ZnIn2O4, WO3, the doping elements in the doped metal oxides include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn, the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS, the IIIA-VA group semiconductor materials include one or more of InP, GaP, and the IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS;

[0038] Optionally, the metal is selected from at least one of aluminum, copper, germanium, silver, platinum, and gold;

[0039] Optionally, the organic conductive material is selected from at least one of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, doped graphene, undoped graphene, and C60.

[0040] To solve the above technical problems, the embodiments of the present application further provide a method for preparing a composite electrode, adopting the following technical solutions:

[0041] A method for preparing a composite electrode, comprising the following steps:

[0042] Providing a first metal vapor;

[0043] Introducing the first metal vapor to deposit and form a first sub-seed layer to obtain a seed layer, and the first sub-seed layer is a discontinuous seed layer;

[0044] Depositing a conductive layer on the seed layer to obtain a composite electrode.

[0045] Further, in the step of introducing the first metal vapor to deposit and form the first sub-seed layer, the deposition time is 1 to 20 s; and / or,

[0046] The first metal vapor is selected from at least one of silver vapor, gold vapor, aluminum vapor, copper vapor, and platinum vapor; and / or,

[0047] The average thickness of the first sub-seed layer is 0.3 to 3 nm; and / or,

[0048] The transmittance of the first sub-seed layer is 80 to 100%; and / or,

[0049] The refractive index of the first sub-seed layer is 1.7 to 2.5; and / or,

[0050] The first sub-seed layer includes a plurality of island-shaped units arranged at intervals;

[0051] Optionally, the average height of the island-shaped unit is 0.3 to 3 nm;

[0052] Optionally, the average diameter of the island-shaped unit is 0.03 to 30 μm;

[0053] Optionally, the interval between adjacent island-shaped units is 1 to 200 μm.

[0054] Further, before the step of introducing the first metal vapor to deposit and form the first sub-seed layer, the following steps are further included:

[0055] Provide a first metal precursor;

[0056] Deposit the first metal precursor to form a second sub-seed layer;

[0057] The step of introducing the first metal vapor to deposit and form the first sub-seed layer includes:

[0058] Introduce the first metal vapor to deposit and form the first sub-seed layer on the second sub-seed layer;

[0059] And / or, before the step of obtaining the seed layer, the following steps are further included:

[0060] Provide a second metal precursor;

[0061] Deposit the second metal precursor on the first sub-seed layer to form a third sub-seed layer.

[0062] Further, the first metal precursor and the second metal precursor are each independently selected from at least one of aluminum acetylacetonate, dimethylaluminum amide, triisobutylaluminum, triethylaluminum, trimethylaluminum, molybdenum hexafluoride, molybdenum hexacarbonyl, copper perfluoropyruvate, copper acetylacetonate, tetramethylgermanium, diethylzinc, zinc ethoxide, titanium tetrapyruvate, pentaacetyl compound, vanadium succinate, tungsten hexacarbonyl, triisopropylaluminum, and trimethylgallium; and / or,

[0063] The first metal precursor and the second metal precursor are made of the same material; and / or,

[0064] The thickness of the second sub-seed layer is 0.3 - 20 nm; and / or,

[0065] The thickness of the third sub-seed layer is greater than or equal to the thickness of the first sub-seed layer;

[0066] The thickness of the third sub-seed layer is 0.3 - 5 nm; and / or,

[0067] The sheet resistance of the second sub-seed layer is 0.1 - 100 Ω / □; and / or,

[0068] The sheet resistance of the third sub-seed layer is 0.1 - 100 Ω / □; and / or,

[0069] The mobility of the second sub-seed layer is 5 - 400 cm 2 / (V·s); and / or,

[0070] The mobility of the third sub-seed layer is 5 - 400 cm 2 / (V·s).

[0071] Further, the step of depositing a conductive layer on the seed layer includes:

[0072] Providing a second metal vapor;

[0073] Introducing the second metal vapor to deposit a conductive layer on the seed layer;

[0074] Optionally, the second metal vapor is selected from at least one of silver vapor, gold vapor, aluminum vapor, copper vapor, and platinum vapor;

[0075] Optionally, the metal material in the second metal vapor is the same as that in the first metal vapor;

[0076] Optionally, the thickness of the conductive layer is 18 - 25 nm.

[0077] Further, before the step of obtaining the composite electrode, the following steps are further included:

[0078] Providing a third metal precursor;

[0079] Depositing the third metal precursor on the conductive layer to form a dielectric layer;

[0080] Optionally, the thickness of the dielectric layer is 10 - 100 nm;

[0081] Optionally, the transmittance of the dielectric layer is 80 - 100%;

[0082] Optionally, the refractive index of the dielectric layer is 1.7 - 2.5.

[0083] To solve the above technical problems, an embodiment of the present application further provides an optoelectronic device, which adopts the following technical solutions:

[0084] An optoelectronic device includes a first electrode and a second electrode stacked;

[0085] The first electrode and / or the second electrode includes a composite electrode, and the composite electrode is the composite electrode as described above or is prepared by using the preparation method of the composite electrode as described above.

[0086] Compared with the prior art, the conductive layer in the composite electrode provided by the present application has good continuity, high transmittance, and low sheet resistance. Description of the Drawings

[0087] To more clearly illustrate the solutions of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.

[0088] Figure 1 is a schematic structural diagram of a composite electrode according to an embodiment of the present application;

[0089] Figure 2 is a flowchart of a preparation method of a composite electrode according to an embodiment of the present application;

[0090] Figure 3 is a schematic structural diagram of an optoelectronic device according to an embodiment of the present application;

[0091] Reference numerals:

[0092] 100, composite electrode; 110, seed layer; 111, first sub-seed layer; 112, second sub-seed layer; 113, third sub-seed layer; 120, conductive layer; 130, dielectric layer; 200, optoelectronic device; 210, first electrode; 220, hole injection layer; 230, hole transport layer; 240, optoelectronic conversion layer; 250, electron transport layer; 270, electron injection layer; 270, second electrode. Detailed embodiments

[0093] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs; the terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above drawings are intended to cover non-exclusive inclusion. The terms "first", "second", etc. in the specification and claims of this application or the above drawings are used to distinguish different objects and not to describe a specific order.

[0094] Reference to "embodiment" herein means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of this application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0095] Based on this, as Figure 1 shown, an embodiment of the present application provides a composite electrode, including a seed layer 110 and a conductive layer 120 arranged in a stacked manner; the seed layer 110 includes a first sub-seed layer 111, and the first sub-seed layer 111 is a discontinuous seed layer.

[0096] In this embodiment, since the surface of the discontinuous seed layer close to the conductive layer 120 is a discontinuous surface, this discontinuous surface not only has a large surface area, but also reduces the spacing between the discontinuous seed layer 110 and the conductive layer 120, making the metal particles used to prepare the conductive layer 120 more likely to form van der Waals attraction with the discontinuous seed layer, thereby effectively improving the speed of forming a continuous thin film of the conductive layer 120, and further enabling the conductive layer 120 to form a highly continuous metal thin film when the thickness is relatively thin.

[0097] In some embodiments, the thickness of the conductive layer 120 is 18 - 25 nm.

[0098] Optionally, the thickness of the conductive layer 120 is selected from any one or any range formed by any two of 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm.

[0099] In some embodiments, the average thickness of the first sub-seed layer 111 is 0.3 - 3 nm.

[0100] Optionally, the average thickness of the first sub-seed layer 111 is selected from any one or any range formed by any two of 0.3 mm, 1 mm, 2 mm, 3 mm.

[0101] In some embodiments, the transmittance of the first sub-seed layer 111 is 80 - 100%.

[0102] Optionally, the transmittance of the first sub-seed layer 111 is selected from any one or any range formed by any two of 80%, 85%, 90%, 95%, 100%.

[0103] In some embodiments, the refractive index of the first sub-seed layer 111 is 1.7 - 2.5.

[0104] Optionally, the refractive index of the first sub-seed layer 111 is selected from any one or any range formed by any two of 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5.

[0105] In some embodiments, the materials of the conductive layer 120 and the first sub-seed layer 111 are independently selected from at least one of silver, gold, aluminum, copper, and platinum.

[0106] In some embodiments, the material of the first sub-seed layer 111 is the same as that of the conductive layer 120. Understandably, since the material of the first sub-seed layer 111 is the same as that of the conductive layer 120, the first sub-seed layer 111 and the conductive layer 120 have similar charge distributions and molecular structures, thereby causing stronger van der Waals attraction, further enhancing the speed at which the conductive layer 120 forms a continuous thin film morphology on the seed layer 110, such that when the thickness of the prepared conductive layer 120 is relatively thin, the conductive layer 120 has already formed a continuous thin film morphology. In this way, the thinning of the conductive layer 120 and the formation of a continuous thin film morphology are achieved, and while maintaining the transmittance of the composite electrode 100, the path length of the current flow is reduced, the electrical conductivity of the composite electrode 100 is enhanced, and thus the electrical and optical properties of the composite electrode 100 are improved.

[0107] In some embodiments, the first sub-seed layer 111 includes a plurality of island units arranged at intervals. In other words, the first sub-seed layer 111 has a discontinuous island structure.

[0108] In some embodiments, the average height of the island units is 0.3 to 3 nm.

[0109] Optionally, the average height of the island units is selected from any one or any range formed by any two of 0.3 nm, 0.3 nm, 0.5 nm, 1 nm, 1.5 nm, 2 nm, 2.5 nm, 3 nm.

[0110] In some embodiments, the average diameter of the island units is 0.03 to 30 μm.

[0111] Optionally, the average diameter of the island units is selected from any one or any range formed by any two of 0.03 μm, 0.05 μm, 0.1 μm, 0.5 μm, 1 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm.

[0112] In some embodiments, the distance between adjacent island units is 1 to 200 μm.

[0113] Optionally, the distance between adjacent island units is selected from any one or any range formed by any two of 1 μm, 10 μm, 20 μm, 50 μm, 80 μm, 100 μm, 120 μm, 150 μm, 180 μm, 200 μm. It can be understood that the distance between adjacent island units refers to the shortest straight-line distance between one island unit and other island units.

[0114] In some embodiments, the seed layer 100 further includes a second sub-seed layer 112, and the second sub-seed layer 112 is disposed on a side of the first sub-seed layer 111 away from the conductive layer 120.

[0115] In this embodiment, the second sub-seed layer 112 is a continuous thin film. Correspondingly, the surface of the first sub-seed layer 111 away from the conductive layer 120 is a continuous surface. In this way, the second sub-seed layer 112 can cooperate with the first sub-seed layer 111 to improve the diffusion ability of the conductive layer on the seed layer, and further enhance the speed of forming a continuous thin film of the conductive layer 120.

[0116] In some embodiments, the thickness of the second sub-seed layer 112 is 0.3 - 20 nm.

[0117] Optionally, the thickness of the second sub-seed layer 112 is selected from any one or any range formed by any two of 0.3 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, 11 mm, 12 mm, 13 mm, 14 mm, 15 mm, 16 mm, 17 mm, 18 mm, 19 mm, 20 mm.

[0118] In some embodiments, the sheet resistance of the second sub-seed layer 112 is 0.1 - 100 Ω / □.

[0119] Optionally, the second sub-seed layer 112 is selected from any one or any range formed by any two of 0.1 Ω / □, 1 Ω / □, 5 Ω / □, 10 Ω / □, 15 Ω / □, 20 Ω / □, 25 Ω / □, 30 Ω / □, 35 Ω / □, 40 Ω / □, 45 Ω / □, 50 Ω / □, 55 Ω / □, 60 Ω / □, 65 Ω / □, 70 Ω / □, 75 Ω / □, 80 Ω / □, 85 Ω / □, 90 Ω / □, 95 Ω / □, 100 Ω / □.

[0120] In some embodiments, the mobility of the second sub-seed layer 112 is 5 - 400 cm 2 / (V·s).

[0121] Optionally, the mobility of the second sub-seed layer 112 is selected from 5 cm 2 / (V·s), 20 cm 2 / (V·s), 40 cm 2 / (V·s), 60 cm 2 / (V·s), 80 cm 2 / (V·s), 100 cm 2 / (V·s), 120 cm 2 / (V·s), 140 cm 2 / (V·s), 160 cm 2 / (V·s), 180 cm 2 / (V·s), 200 cm 2 / (V·s), 220 cm 2 / (V·s), 240 cm 2 / (V·s), 260 cm 2 / (V·s), 280 cm 2 / (V·s), 300 cm 2 / (V·s), 320 cm 2 / (V·s), 340 cm 2 / (V·s), 360 cm 2 / (V·s), 380 cm 2 / (V·s), 400 cm 2 The range formed by any one or both of / (V·s).

[0122] In some embodiments, the seed layer 110 further includes a third sub-seed layer 113, the third sub-seed layer 113 is disposed close to the conductive layer 120, and the first sub-seed layer 111 is disposed between the second sub-seed layer 112 and the third sub-seed layer 113. Understandably, the surface of the third sub-seed layer 113 close to the first sub-seed layer 111 corresponds to the discontinuous surface shape on the first sub-seed layer 111, so that the surface of the third sub-seed layer 113 close to the first sub-seed layer 111 is spliced with the discontinuous surface on the first sub-seed layer 111. In this way, on the one hand, the third sub-seed layer 113 provides a flat growth surface for the conductive layer 120, and on the other hand, it can cooperate with the second sub-seed layer 112 and the first sub-seed layer 111 to further improve the diffusion ability of the conductive layer 120 on the seed layer 110, thereby further enhancing the speed of forming a continuous thin film of the conductive layer 120.

[0123] In some embodiments, the thickness of the third sub-seed layer 113 is 0.3 - 5 nm.

[0124] Optionally, the thickness of the third sub-seed layer 113 is selected from the range formed by any one or both of 0.3 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm.

[0125] In some embodiments, the thickness of the third sub-seed layer 113 is greater than the thickness of the first sub-seed layer 111. At this time, the third sub-seed layer 113 covers the discontinuous surface on the first sub-seed layer 111, so that the surface of the formed third sub-seed layer 113 close to the first sub-seed layer 111 is a flat and continuous surface, which is beneficial to the growth of the conductive layer 120.

[0126] In some other embodiments, the thickness of the third sub-seed layer 113 is equal to the thickness of the first sub-seed layer 111. At this time, not only does the third sub-seed layer 113 contact the conductive layer 120, but also the top surface of the discontinuous surface on the first sub-seed layer 111 contacts the conductive layer 120. This is beneficial to further improving the diffusion ability of the conductive layer 120 on the seed layer 110, and thus further enhancing the speed of forming a continuous thin film of the conductive layer 120.

[0127] Exemplarily, the discontinuous surface of the first sub-seed layer 111 is an island structure, and the first sub-seed layer 111 is made of the same material as the conductive layer 120. When the thickness of the third sub-seed layer 113 is equal to the thickness of the first sub-seed layer 111, the top surface of the island structure of the first sub-seed layer 111 contacts the conductive layer 120. And because the first sub-seed layer 111 and the conductive layer 120 are made of the same material, when the metal material for preparing the conductive layer 120 grows, stronger van der Waals attraction can be generated between the metal particles and the first sub-seed layer 111. With the nucleation sites and diffusion activation energy provided by the third sub-seed layer 113, the speed of forming a continuous thin film of the conductive layer 120 is further enhanced.

[0128] In some embodiments, the sheet resistance of the third sub-seed layer 113 is 0.1 to 100 Ω / sq.

[0129] Optionally, the sheet resistance of the third sub-seed layer 113 is selected from any one or any range formed by any two of 0.1 Ω / sq, 1 Ω / sq, 5 Ω / sq, 10 Ω / sq, 15 Ω / sq, 20 Ω / sq, 25 Ω / sq, 30 Ω / sq, 35 Ω / sq, 40 Ω / sq, 45 Ω / sq, 50 Ω / sq, 55 Ω / sq, 60 Ω / sq, 65 Ω / sq, 70 Ω / sq, 75 Ω / sq, 80 Ω / sq, 85 Ω / sq, 90 Ω / sq, 95 Ω / sq, 100 Ω / sq.

[0130] In some embodiments, the mobility of the third sub-seed layer 113 is 5 to 400 cm 2 / (V·s).

[0131] Optionally, the mobility of the third sub-seed layer 113 is selected from 5 cm 2 / (V·s), 20 cm 2 / (V·s), 40 cm 2 / (V·s), 60 cm 2 / (V·s), 80 cm 2 / (V·s), 100 cm 2 / (V·s), 120 cm 2 / (V·s), 140 cm 2 / (V·s), 160 cm 2 / (V·s), 180 cm 2 / (V·s), 200 cm 2 / (V·s), 220 cm 2 / (V·s), 240 cm 2 / (V·s), 260 cm 2 / (V·s), 280 cm 2 / (V·s), 300 cm 2 / (V·s), 320 cm 2 / (V·s), 340 cm 2 / (V·s), 360 cm 2 / (V·s), 380 cm 2 / (V·s), 400 cm 2 The range formed by any one or both of them in / (V·s).

[0132] In some embodiments, the materials of the second sub-seed layer 112 and the third sub-seed layer 113 are independently selected from at least one of metal oxides, metals, and organic conductive materials respectively.

[0133] Optionally, the metal compound includes one or more of doped metal oxides, undoped metal oxides, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials.

[0134] Optionally, the metal oxide includes one or more of MoO3, ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, NbO, V2O5, ZnAl2O4, ZnGa2O4, ZnIn2O4, WO3; the doping elements in the doped metal oxide include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn; the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, CdS; the IIIA-VA group semiconductor material includes one or more of InP, GaP; the IB-IIIA-VIA group semiconductor material includes one or more of CuInS, CuGaS.

[0135] Optionally, the metal is selected from at least one of aluminum, copper, germanium, silver, platinum, and gold.

[0136] Optionally, the organic conductive material is selected from at least one of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, doped graphene, undoped graphene, and C60.

[0137] Understandably, within this material range, the second sub-seed layer 112 and the third sub-seed layer 113 can select materials with the same or similar functions, such that the second sub-seed layer 112 and the third sub-seed layer 113 have the same or similar functions, so that the number of nucleation sites and the interfacial behavior of the diffusion activation energy of the two tend to be consistent, and further, it is easier for the conductive layer 120 to form a continuous thin film.

[0138] Preferably, the second sub-seed layer 112 and the third sub-seed layer 113 are independently selected from at least one of aluminum, copper, zinc oxide, and molybdenum oxide, which are materials with relatively high conductivity, so as to reduce the sheet resistance of the second sub-seed layer 112 and the third sub-seed layer 113, and further reduce the sheet resistance of the composite electrode 100, thereby improving the conductivity of the composite electrode 100; moreover, these materials have relatively high wettability with the particles during the deposition of the conductive layer 120, and can provide more nucleation sites and diffusion activation energy for the deposition of the conductive layer 120, thus facilitating the rapid formation of a continuous thin film of the conductive layer 120 and realizing the thinning and continuous morphology of the conductive layer 120.

[0139] In some embodiments, the composite electrode 100 further includes a dielectric layer 130 laminated on the conductive layer 120.

[0140] In this embodiment, by disposing the conductive layer 120 between the first sub-seed layer 111 and the dielectric layer 130, a dielectric-metal-dielectric layer 130 (DMD) sandwich structure is formed, so as to reduce the resistance through the parallel connection of the conductive layer 120 and the dielectric layer, thereby further improving the conductivity of the composite electrode 100.

[0141] In some embodiments, the thickness of the dielectric layer 130 is selected from 10 to 100 nm.

[0142] Optionally, the thickness of the dielectric layer 130 is selected from any one or any range formed by any two of 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, and 100 nm.

[0143] In some embodiments, the transmittance of the dielectric layer 130 is 80-100%.

[0144] Optionally, the transmittance of the dielectric layer 130 is any one or the range formed by any two of 80%, 85%, 90%, 95%, 100%.

[0145] In some embodiments, the refractive index of the dielectric layer 130 is 1.7-2.5. Thus, since both the dielectric layer 130 and the conductive layer 120 have high transmittance, the composite electrode 100 has a high light extraction effect.

[0146] Optionally, the refractive index of the dielectric layer 130 is selected from any one or the range formed by any two of 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2.5.

[0147] In some embodiments, the material of the dielectric layer 130 is selected from at least one of metal oxides, metals, and organic conductive materials.

[0148] Optionally, the metal compound includes one or more of doped metal oxides, undoped metal oxides, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials.

[0149] Optionally, the metal oxides include one or more of MoO3, ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, NbO, V2O5, ZnAl2O4, ZnGa2O4, ZnIn2O4, WO3; the doping elements in the doped metal oxides include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn; the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS; the IIIA-VA group semiconductor materials include one or more of InP, GaP; the IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS.

[0150] Optionally, the metal is selected from at least one of aluminum, copper, germanium, silver, platinum, and gold.

[0151] Optionally, the organic conductive material is selected from at least one of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, doped graphene, undoped graphene, and C60.

[0152] As Figure 2 shown, an embodiment of the present application further provides a method for preparing a composite electrode for preparing the composite electrode as described above; the method for preparing the composite electrode includes the following steps:

[0153] Step S210: Provide a first metal vapor.

[0154] Step S220: Introduce the first metal vapor to deposit and form a first sub-seed layer to obtain a seed layer, and the first sub-seed layer is a discontinuous seed layer.

[0155] Step S230: Deposit a conductive layer on the seed layer to obtain a composite electrode.

[0156] In this embodiment, since one side of the discontinuous seed layer close to the conductive layer is a discontinuous surface, this discontinuous surface not only has a large surface area, but also reduces the distance between the discontinuous seed layer and the conductive layer, making it easier for metal particles used to prepare the conductive layer to form van der Waals attraction with the discontinuous seed layer, thereby effectively increasing the speed of forming a continuous thin film of the conductive layer, and further enabling the conductive layer to form a highly continuous metal thin film when the thickness is relatively thin.

[0157] The above step S210:

[0158] In some embodiments, the first metal vapor is selected from at least one of silver vapor, gold vapor, aluminum vapor, copper vapor, and platinum vapor.

[0159] The above step S220:

[0160] In some embodiments, in the step of introducing the first metal vapor to deposit and form a first sub-seed layer, the deposition time is 5 to 60 s.

[0161] It can be understood that since the metal thin film has a threshold thickness, when it is below this threshold thickness, the deposited metal thin film is in a discontinuous film form; therefore, in the present application, by controlling the deposition time of the first sub-seed layer within the range of 1 to 20 s, the deposited first sub-seed layer is a discontinuous seed layer.

[0162] Optionally, in the step of introducing the first metal vapor for deposition to form the first sub-seed layer, the deposition time is selected from any one or any range formed by any two of 1 s, 5 s, 10 s, 15 s, and 20 s.

[0163] In some embodiments, before the step of introducing the first metal vapor for deposition to form the first sub-seed layer, the method further includes: providing a first metal precursor, and introducing the first metal precursor for deposition to form a second sub-seed layer; correspondingly, the step of introducing the first metal vapor for deposition to form the first sub-seed layer includes: introducing the first metal vapor to deposit on the second sub-seed layer to form the first sub-seed layer.

[0164] In this embodiment, the deposited second seed layer is a continuous thin film, which provides a plane for the growth of the first sub-seed layer, and the second sub-seed layer can cooperate with the first sub-seed layer to improve the diffusion ability of the conductive layer on the seed layer, and further improve the speed of forming a continuous thin film of the conductive layer.

[0165] In some embodiments, the specific method for depositing the second sub-seed layer may adopt conventional techniques in the art, such as chemical methods or physical methods. Among them, chemical methods include chemical vapor deposition, sequential ionic layer adsorption and reaction, anodic oxidation, electrodeposition, coprecipitation. Physical methods include physical coating methods and solution methods. Among them, physical coating methods include: thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method, etc.; solution methods can be spin coating method, printing method, inkjet printing method, scraping method, printing method, dip coating method, immersion method, spraying method, roll coating method, casting method, slot die coating method, and bar coating method, etc.

[0166] Preferably, the second sub-seed layer is prepared by atomic layer deposition.

[0167] Specifically, after introducing the first metal precursor, a plasma gas reaction source is introduced, a preset radio frequency power is loaded and maintained for a preset time to cause the first metal precursor to react, and after repeating the above steps a preset number of times, the second sub-seed layer is deposited.

[0168] It can be understood that the more the preset number of repetitions, the thicker the deposited second sub-seed layer; therefore, the thickness of the second sub-seed layer with different thicknesses can be finally deposited by adjusting the preset number of times.

[0169] Furthermore, the first metal precursor is selected from at least one of aluminum acetylacetonate, dimethylaluminum amide, triisobutylaluminum, triethylaluminum, trimethylaluminum, molybdenum hexafluoride, molybdenum hexacarbonyl, copper perfluoropyruvate, copper acetylacetonate, tetramethylgermanium, diethylzinc, zinc ethanolate, titanium tetrapyruvate, pentaacetyl compound, vanadium succinate, tungsten hexacarbonyl, triisopropylaluminum, and trimethylgallium.

[0170] Further, the plasma reaction source includes hydrogen, nitrogen, helium, argon, neon, krypton, and xenon.

[0171] Further, the gas flow rate of the plasma reaction source is 6000 - 24000 sccm / m 2 .

[0172] Optionally, the gas flow rate of the plasma reaction source is 6000 sccm / m 2 , 8000 sccm / m 2 , 10000 sccm / m 2 , 12000 sccm / m 2 , 14000 sccm / m 2 , 16000 sccm / m 2 , 18000 sccm / m 2 , 20000 sccm / m 2 , 22000 sccm / m 2 , 24000 sccm / m 2 or any range formed by any two of them.

[0173] Further, the introduction time of the plasma reaction source is 0.2 - 10 s.

[0174] Optionally, the introduction time of the plasma reaction source is any range formed by any one or any two of 0.2 s, 1 s, 2 s, 3 s, 4 s, 5 s, 6 s, 7 s, 8 s, 9 s, 10 s.

[0175] In some embodiments, the RF power of the plasma reaction source is 30 - 120 kW / m 2 .

[0176] Optionally, the RF power of the plasma reaction source is selected from 30 kW / m 2 , 60 kW / m 2 , 90 kW / m 2 , 120 kW / m 2 or any range formed by any one or any two of them.

[0177] In some embodiments, the RF time of the plasma reaction source is 0.5 - 20 s.

[0178] Optionally, the RF time of the plasma reaction source is any range formed by any one or any two of 0.5 s, 1 s, 4 s, 8 s, 12 s, 16 s, 20 s.

[0179] In some embodiments, in the step S222 of introducing the first metal precursor to deposit and form the second sub-seed layer, a carrier gas is further introduced to bring the above-mentioned precursor to the surface of the substrate.

[0180] Optionally, the carrier gas includes one or more of nitrogen, helium, argon, neon, krypton, and xenon.

[0181] In some embodiments, before the step S220 of obtaining the seed layer, the following steps are further included: providing a second metal precursor; introducing the second metal precursor to deposit and form a third sub-seed layer on the first sub-seed layer.

[0182] In this embodiment, one side of the third sub-seed layer close to the first sub-seed layer corresponds to the shape of the discontinuous surface on the first sub-seed layer, so that one side of the third sub-seed layer close to the first sub-seed layer is spliced with the discontinuous surface on the first sub-seed layer. In this way, on the one hand, the third sub-seed layer provides a flat growth surface for the conductive layer, and on the other hand, it can cooperate with the second sub-seed layer and the first sub-seed layer to further improve the diffusion ability of the conductive layer on the seed layer, thereby further increasing the speed of forming a continuous thin film of the conductive layer.

[0183] In some embodiments, the third sub-seed layer can be prepared by the above-mentioned chemical method or physical method for preparing the second seed layer, which will not be elaborated here.

[0184] It should be noted that when using different preparation processes to prepare the third sub-seed layer, the corresponding process parameters can be adjusted to adjust the thickness of the finally prepared third sub-seed layer. For example, when the third sub-seed layer is prepared by atomic layer deposition, the thickness of the finally prepared third sub-seed layer can be adjusted by adjusting the number of repetitions; when the third sub-seed layer is prepared by magnetron sputtering, the thickness of the finally prepared third sub-seed layer can be adjusted by adjusting the deposition time.

[0185] The above step S230:

[0186] In some embodiments, in the step S230 of depositing the conductive layer on the seed layer, the following steps are included: providing a second metal vapor, and introducing the second metal vapor to deposit the conductive layer.

[0187] In some embodiments, the second metal vapor is selected from at least one of silver vapor, gold vapor, aluminum vapor, copper vapor, and platinum vapor.

[0188] In some embodiments, the metal material in the second metal vapor is the same as that in the first metal vapor. In this way, the obtained conductive layer has a similar charge distribution and molecular structure to the first sub-seed layer, thereby causing a stronger van der Waals attraction, further enhancing the speed at which the conductive layer forms a continuous film morphology on the seed layer, so that when the thickness of the prepared conductive layer is relatively thin, the conductive layer has formed a continuous film morphology, realizing the thinning of the conductive layer and presenting a continuous film morphology, and while maintaining the transmittance of the composite electrode, reducing the path length of the current flowing through, improving the conductivity of the composite electrode, and further improving the electrical and optical properties of the composite electrode.

[0189] In some embodiments, before the step S230 of obtaining the composite electrode, the following steps are further included: providing a third metal precursor, and introducing the third metal precursor to deposit a dielectric layer on the conductive layer.

[0190] In this embodiment, by disposing the conductive layer between the second sub-seed layer and the dielectric layer, a dielectric-metal-dielectric layer (DMD) sandwich structure is formed to reduce the resistance through the parallel connection of the conductive layer and the dielectric layer, thereby further improving the conductivity of the composite electrode.

[0191] In some embodiments, the third metal precursor and the second metal precursor are each independently selected from at least one of aluminum acetylacetonate, dimethylaluminum amide, triisobutylaluminum, triethylaluminum, trimethylaluminum, molybdenum hexafluoride, molybdenum hexacarbonyl, copper perfluoropyruvate, copper acetylacetonate, tetramethylgermanium, diethylzinc, zinc ethoxide, titanium tetrapyruvate, pentaacetyl compound, vanadium succinate, tungsten hexacarbonyl, triisopropylaluminum, and trimethylgallium.

[0192] As Figure 1 and Figure 3 shown, an embodiment of the present application further provides an optoelectronic device, including a first electrode 210 and a second electrode 270 which are stacked;

[0193] The first electrode 210 and / or the second electrode 270 includes a composite electrode 100, and the composite electrode 100 is the composite electrode 100 as described above, or is prepared by using the preparation method of the composite electrode 100 as described above.

[0194] In this embodiment, since the surface of the discontinuous seed layer adjacent to the conductive layer 120 is a discontinuous surface, this discontinuous surface not only has a large surface area, but also reduces the spacing between the discontinuous seed layer 110 and the conductive layer 120, making it easier for the metal particles used to prepare the conductive layer 120 to form van der Waals attraction with the discontinuous seed layer, thereby effectively increasing the speed of forming a continuous thin film of the conductive layer 120. Furthermore, the conductive layer 120 can form a highly continuous metal thin film when the thickness is relatively thin. In this way, the conductive layer 120 is thinned and in the form of a continuous thin film, further improving the electrical and optical properties of the composite electrode 100, and thus improving the electrical and optical properties of the optoelectronic device 200.

[0195] In some embodiments, the optoelectronic device 200 further includes a photoelectric conversion layer 240 disposed between the first electrode 210 and the second electrode 270.

[0196] In some embodiments, the optoelectronic device 200 is a light-emitting device, and the photoelectric conversion layer 240 is a quantum dot light-emitting layer or an organic light-emitting layer; the material of the quantum dot light-emitting layer includes at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are each independently selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. Among them, the II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; the I-III-VI group compounds are selected from at least one of CuInS2, CuInSe2, and AgInS2;And / or, the material of the organic light-emitting layer includes at least one of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine-C2,N]iridium(III), 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine-C2,N]iridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, and DBP fluorescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;

[0197] In some other embodiments, the optoelectronic device 200 is a photovoltaic device, and the photoelectric conversion layer 240 includes a P-type material and an N-type material; the P-type material is selected from at least one of polythiophene and its derivatives, polypyrrole and its derivatives, pyrazoline derivatives, arylamine derivatives, triphenyl diamine derivatives, oligothiophene and its derivatives, polyvinylcarbazole and its derivatives, polysilane and its derivatives, aromatic polysiloxane derivatives, polyaniline and its derivatives, phthalocyanine derivatives, porphyrin and its derivatives, poly(p-phenylene vinylene) and its derivatives, poly(thiophene vinylene) and its derivatives; and / or, the N-type material is selected from at least one of fullerene and its derivatives, non-fullerene small molecule acceptors, and non-fullerene polymer acceptor materials.

[0198] In some embodiments, the optoelectronic device 200 further includes a hole functional layer disposed between the first electrode 210 and the photoelectric conversion layer 240, and the hole functional layer is selected from at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal stannides, doped graphene, undoped graphene, C60, copper polyester carbonate, and molybdenum trioxide.

[0199] Further, the hole functional layer includes a hole injection layer 220 and / or a hole transport layer 230; when the hole functional layer includes a hole injection layer 220 and a hole transport layer 230, the hole injection layer 220 and the hole transport layer 230 are sequentially stacked between the first electrode 210 and the photoelectric conversion layer 240.

[0200] In some embodiments, the optoelectronic device 200 further includes an electron functional layer disposed between the optoelectronic conversion layer 240 and the second electrode 270, and the electron functional layer is selected from inorganic materials and / or organic materials; the inorganic materials include one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanate oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, and the doped elements include at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium; the organic materials include at least one of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, polythiophene compounds, perylene diimide compounds, fullerene compounds.

[0201] Further, the electron functional layer includes an electron injection layer 270 and / or an electron transport layer 250; when the electron functional layer includes an electron injection layer 270 and an electron transport layer 250, the electron transport layer 250 and the electron injection layer 270 are sequentially stacked between the first electrode 210 and the optoelectronic conversion layer 240.

[0202] In some embodiments, the optoelectronic device 200 is a normal optoelectronic device 200 or an inverted optoelectronic device 200.

[0203] When the optoelectronic device 200 is a normal optoelectronic device 200, the normal optoelectronic device 200 includes a first electrode 210, a hole functional layer, an optoelectronic conversion layer 240, an electron functional layer, and a second electrode 270 that are sequentially stacked.

[0204] When the optoelectronic device 200 is an inverted optoelectronic device 200, the normal optoelectronic device 200 includes a second electrode 270, an electron functional layer, an optoelectronic conversion layer 240, a hole functional layer, and a first electrode 210 that are sequentially stacked.

[0205] The technical solutions and technical effects of the present application will be described in detail below through specific examples and comparative examples. The following examples are only partial examples of the present application and do not specifically limit the present application.

[0206] Composite Electrode Example 1:

[0207] Step 1, provide a substrate;

[0208] Step 2: Control the chamber vacuum to be less than 1E-4 Pa, heat the crucible with high-purity silver plating material to 950 - 1000 °C, monitor the silver evaporation rate using a crystal oscillator. When the rate is stable and within the range of 1 angstrom per second, open the baffle between the substrate and the crucible, introduce Au vapor to the substrate, and form a first sub-seed layer with a thickness of 1 nm on the substrate using the evaporation method. The evaporation time is 10 s; among them, the first seed layer is a discontinuous seed layer.

[0209] Step 3: Control the chamber vacuum to be less than 1E-4 Pa, heat the crucible with high-purity silver plating material to 950 - 1000 °C, monitor the silver evaporation rate using a crystal oscillator. When the rate is stable and within the range of 1 angstrom per second, open the baffle between the substrate and the crucible, introduce Ag vapor to the first sub-seed layer, and form a conductive layer with a thickness of 8 nm on the first sub-seed layer using the evaporation method to obtain a composite electrode. The evaporation time is 80 s.

[0210] Composite electrode Example 2:

[0211] The difference from the above Composite electrode Example 1 is that in Step 2 of this example, the Au vapor is changed to Cu vapor.

[0212] Composite electrode Example 3:

[0213] The difference from the above Composite electrode Example 1 is that before Step 2 of this example, it further includes Step 4: forming a second seed layer on the substrate. Specifically, keep the chamber pressure at 0.2 - 1.5 Torr and the substrate spacing at 20 - 50 mm; introduce trimethylaluminum, and at the same time use Ar as the carrier gas to bring the trimethylaluminum in the cylinder into the chamber. The introduction time is 1 s and the flow rate is about 20000 sccm / m 2 ; Stop the introduction of the precursor trimethylaluminum, evacuate the residual side reaction gases in the chamber environment, and only retain the reactive trimethylaluminum reaction groups adsorbed on the substrate and the chamber wall. The evacuation time is about 3 s; introduce the reducing gas reaction source H2, with a flow rate of about 18000 sccm / m 2 , the introduction time is about 5 s, and the radio frequency power of 80 kW / m 2 , the duration is about 10 s; evacuate for 2 s; repeat the above steps 15 times to form a second sub-seed layer with a thickness of 0.5 nm, where the second sub-seed layer is an aluminum thin film.

[0214] Correspondingly, in Step 2 of this example, a first sub-seed layer is formed on the second sub-seed layer.

[0215] Composite electrode Example 4:

[0216] The difference from the above-mentioned Composite Electrode Example 1 is as follows: Before Step 3 of this example, it further includes Step 5: forming a third sub-seed layer on the first sub-seed layer. Specifically, keep the chamber pressure at 0.2 - 1.5 Torr and the substrate spacing at 20 - 50 mm; introduce trimethylaluminum, and at the same time use Ar as the carrier gas to bring the trimethylaluminum in the cylinder into the chamber. The introduction time is 1 s and the flow rate is about 20000 sccm / m 2 ; stop the introduction of the precursor trimethylaluminum; evacuate the residual side reaction gases in the chamber environment, and only retain the reactive trimethylaluminum reaction groups adsorbed on the first sub-seed layer and the chamber wall. The evacuation time is about 3 s; introduce the reducing gas reaction source H2, and the flow rate is about 18000 sccm / m 2 , the introduction time is about 5 s, and the RF power is 80 kW / m 2 , and the duration is about 10 s; evacuate for 2 s; repeat the above steps 25 times to form a third sub-seed layer with a thickness of 1 nm, where the third sub-seed layer is an aluminum thin film.

[0217] Correspondingly, in Step 3 of this example, a conductive layer is formed on the third sub-seed layer, and the first seed layer is in contact with the conductive layer.

[0218] Composite Electrode Example 5:

[0219] The difference from the above-mentioned Composite Electrode Example 4 is as follows: In Step 5 of this example, the number of times of repeating the above steps 25 times is changed to 35 times; correspondingly, the thickness of the prepared third sub-seed layer is 1.5 nm, and the third sub-seed layer covers the first sub-seed layer;

[0220] Correspondingly, in Step 3 of this example, the third sub-seed layer is not in contact with the conductive layer.

[0221] Composite Electrode Example 6:

[0222] The difference from the above-mentioned Composite Electrode Example 4 is as follows: In Step 5 of this example, trimethylaluminum is modified to diethylzinc; correspondingly, the finally prepared second sub-seed layer is a zinc oxide thin film.

[0223] Composite Electrode Example 7:

[0224] The difference from the above-mentioned Composite Electrode Example 4 is as follows: Step 3 of this example further includes: after forming a dielectric layer on the conductive layer, a composite electrode is obtained. Specifically, keep the chamber pressure at 0.2 - 1.5 Torr and the substrate spacing at 20 - 50 mm; introduce diethylzinc, and at the same time use Ar as the carrier gas to bring the diethylzinc in the cylinder into the chamber. The introduction time is 1 s and the flow rate is about 20000 sccm / m 2; Stop the introduction of the precursor diethylzinc; Pump out the residual side reaction gases in the chamber environment, only retaining the reactive diethylzinc reaction groups adsorbed on the substrate and the chamber wall. The pumping time is about 3 s; Introduce the reducing gas reaction source H2, with a flow rate of about 18,000 sccm / m 2 , introduce it for about 5 s, with a radio frequency power of 80 kW / m 2 , and the duration is about 10 s; Pump out the gas for 2 s; Repeat the above steps 130 times to form a dielectric layer with a thickness of 10 nm, where the dielectric layer is a zinc oxide thin film.

[0225] Composite electrode Example 8:

[0226] The difference from the above Composite electrode Example 1 is that: before Step 3 of this example, a third seed layer is formed on the first seed layer. Specifically, maintain the chamber pressure at 0.2 - 1.5 Torr and the substrate spacing at 20 - 50 mm; Introduce trimethylaluminum, and at the same time use Ar as the carrier gas to bring the trimethylaluminum in the cylinder into the chamber. The introduction time is 1 s, and the flow rate is about 20,000 sccm / m 2 ; Stop the introduction of the precursor trimethylaluminum; Pump out the residual side reaction gases in the chamber environment, only retaining the reactive trimethylaluminum reaction groups adsorbed on the first sub-seed layer and the chamber wall. The pumping time is about 3 s; Introduce the reducing gas reaction source H2, with a flow rate of about 18,000 sccm / m 2 , introduce it for about 5 s, with a radio frequency power of 80 kW / m 2 , and the duration is about 10 s; Pump out the gas for 2 s; Repeat the above steps 25 times to form a third sub-seed layer with a thickness of 1 nm, where the third sub-seed layer is an aluminum thin film.

[0227] Correspondingly, in Step 3 of this example, a conductive layer is formed on the third sub-seed layer, and the first seed layer is in contact with the conductive layer.

[0228] Composite electrode Comparative Example 1:

[0229] The difference from the above Composite electrode Example 1 is that: this comparative example omits Step 2; Correspondingly, Step 3 of this comparative example is: Use the evaporation method to form a conductive layer with a thickness of 8 nm on the substrate.

[0230] Experimental test analysis 1:

[0231] Perform sheet resistance and transmittance tests on the composite electrodes prepared in Composite electrode Examples 1 to 8 and Composite electrode Comparative Example 1 respectively, and obtain the test results shown in Table 1. Among them:

[0232] Transmittance test method: UV-vis spectrophotometer, instrument model Lambda365; Test the thin film + glass sample and subtract the transmittance of the glass.

[0233] Sheet resistance test method: four-probe tester, model RTS-8; take the average value of the sheet resistance at 5 points within the glass surface for testing.

[0234] Table 1

[0235]

[0236] Refer to Table 1:

[0237] It can be seen from Composite Electrode Examples 1 to 3 and 8 and Composite Electrode Comparative Example 1 that, compared with directly preparing a conductive layer on the substrate in Composite Electrode Comparative Example 1, in the composite electrode prepared by this solution, by providing a discontinuous first sub-seed layer for the preparation of the conductive layer, the contact area between the first sub-seed layer and the vapor used to prepare the conductive layer is increased, and the spacing between the discontinuous seed layer and the conductive layer is reduced, making it easier for the metal particles used to prepare the conductive layer to form van der Waals attraction with the discontinuous seed layer, effectively improving the speed of forming a continuous thin film of the conductive layer, enabling the composite electrode to form a continuous thin film when it is relatively thin, and thus, while the thickness and transmittance of Composite Electrode Examples 1 to 3 and 8 are close to those of Composite Electrode Comparative Example 1, the sheet resistance of Composite Electrode Examples 1 to 3 and 8 is reduced.

[0238] Furthermore, it can be seen from Composite Electrode Examples 4 to 6 and Composite Electrode Comparative Example 1 that, compared with directly preparing a conductive layer on the substrate in Composite Electrode Comparative Example 1, in the composite electrode prepared by this solution, through the synergistic effect of the second sub-seed layer, the third sub-seed layer and the first sub-seed layer, more nucleation sites and diffusion activation energy can be provided, thereby improving the speed of forming a continuous thin film morphology of the conductive layer on the seed layer during the preparation process, and since the material of the first sub-seed layer is the same as that of the conductive layer, the first sub-seed layer and the conductive layer have similar charge distributions and molecular structures, thus triggering van der Waals attraction and further improving the speed of forming a continuous thin film morphology of the conductive layer on the seed layer; in this way, while Composite Electrode Examples 4 to 6 have a total thickness and transmittance similar to those of Composite Electrode Comparative Example 1, they have a lower sheet resistance, improving the conductive performance of the composite electrode.

[0239] Furthermore, it can be seen from Composite Electrode Example 8 and Composite Electrode Comparative Example 1 that, since the conductive layer is disposed between the second sub-seed layer and the dielectric layer, forming a dielectric-metal-dielectric layer (DMD) sandwich structure, thereby reducing the resistance in parallel between the conductive layer and the dielectric layer, and thus, compared with Composite Electrode Comparative Example 1, the composite electrode of Composite Electrode Example 8 has a lower sheet resistance.

[0240] Obviously, the embodiments described above are only a part of the embodiments of this application, rather than all of them. The preferred embodiments of this application are shown in the accompanying drawings, but they do not limit the patent scope of this application. This application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosed content of this application more thorough and comprehensive. Although this application has been described in detail with reference to the foregoing embodiments, for those skilled in the art, they can still modify the technical solutions described in the foregoing specific embodiments, or perform equivalent replacements on some of the technical features. Any equivalent structure that makes use of the content of the specification and drawings of this application, directly or indirectly applied in other related technical fields, is equally within the scope of patent protection of this application.

Claims

1. A composite electrode, characterized in that, The composite electrode includes a seed layer and a conductive layer which are stacked; The seed layer includes a first sub-seed layer, and the first sub-seed layer is a discontinuous seed layer.

2. The composite electrode according to claim 1, characterized in that, The first sub-seed layer includes a plurality of island-shaped units arranged at intervals; and / or, The seed layer further includes a second sub-seed layer and a third sub-seed layer. The third sub-seed layer is arranged close to the conductive layer, and the first sub-seed layer is arranged between the second sub-seed layer and the third sub-seed layer.

3. The composite electrode according to claim 2, wherein The average height of the island-shaped units is 0.3 - 3 nm; and / or, The average diameter of the island-shaped units is 0.03 - 30 μm; and / or, The interval between adjacent island-shaped units is 1 - 200 μm; and / or, The thickness of the second sub-seed layer is 0.3 - 20 nm; and / or, The thickness of the third sub-seed layer is 0.3 - 5 nm; and / or, The thickness of the third sub-seed layer is greater than or equal to the thickness of the first sub-seed layer; and / or, The sheet resistance of the second sub-seed layer is 0.1 - 100 Ω / square; and / or, The sheet resistance of the third sub-seed layer is 0.1 - 100 Ω / square; and / or, The mobility of the second sub-seed layer is 5 to 400 cm 2 / (V·s); and / or, The mobility of the third sub-seed layer is 5 to 400 cm 2 / (V·s); and / or, The second sub-seed layer and the third sub-seed layer are made of the same material; and / or, The materials of the second sub-seed layer and the third sub-seed layer are independently selected from at least one of metal compounds, metals, and organic conductive materials; Optionally, the metal is selected from at least one of aluminum, copper, germanium, silver, platinum, and gold; Optionally, the organic conductive material is selected from at least one of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, doped graphene, undoped graphene, and C60; Optionally, the metal compound includes one or more of doped metal oxides, undoped metal oxides, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials; Preferably, the metal oxide includes one or more of MoO3, ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, NbO, V2O5, ZnAl2O4, ZnGa2O4, ZnIn2O4, and WO3; the doping elements in the doped metal oxide include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn; the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor materials include one or more of InP and GaP; the IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

4. The composite electrode according to any one of claims 1 to 3, characterized in that, The thickness of the conductive layer is 18 to 25 nm; and / or, The average thickness of the first sub-seed layer is 0.3 to 3 nm; and / or, The transmittance of the first sub-seed layer is 80 to 100%; and / or, The refractive index of the first sub-seed layer is 1.7 to 2.5; and / or, The materials of the conductive layer and the first sub-seed layer are independently selected from at least one of silver, gold, aluminum, copper, and platinum; and / or, The material of the first sub-seed layer is the same as that of the conductive layer.

5. The composite electrode according to any one of claims 1 to 3, characterized in that The composite electrode further includes a dielectric layer laminated on the conductive layer; Optionally, the thickness of the dielectric layer is 10 to 100 nm; and / or, The transmittance of the dielectric layer is 80 to 100%; and / or, The refractive index of the dielectric layer is 1.7 to 2.5; and / or, The material of the dielectric layer is selected from at least one of metal oxides, metals, and organic conductive materials; Wherein, the metal compound includes one or more of doped metal oxides, undoped metal oxides, ceramic semiconductor materials, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials; Optionally, the metal oxide includes one or more of MoO3, ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, NbO, V2O5, ZnAl2O4, ZnGa2O4, ZnIn2O4, WO3, the doping elements in the doped metal oxide include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, Sn, the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS, the IIIA-VA group semiconductor materials include one or more of InP, GaP, and the IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS; Optionally, the metal is selected from at least one of aluminum, copper, germanium, silver, platinum, and gold; Optionally, the organic conductive material is selected from at least one of polyetherimide, TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, doped graphene, undoped graphene, and C60.

6. A preparation method of a composite electrode, characterized in that, Including the following steps: Providing a first metal vapor; Introducing the first metal vapor to deposit and form a first sub-seed layer to obtain a seed layer, and the first sub-seed layer is a discontinuous seed layer; Depositing a conductive layer on the seed layer to obtain a composite electrode.

7. The preparation method of the composite electrode according to claim 6, characterized in that, In the step of introducing the first metal vapor to deposit and form the first sub-seed layer, the deposition time is 1 to 20 s; and / or, The first metal vapor is selected from at least one of silver vapor, gold vapor, aluminum vapor, copper vapor, and platinum vapor; and / or, The average thickness of the first sub-seed layer is 0.3 - 3 nm; and / or, The transmittance of the first sub-seed layer is 80 - 100%; and / or, The refractive index of the first sub-seed layer is 1.7 - 2.5; and / or, The first sub-seed layer includes a plurality of island-shaped units arranged at intervals; Optionally, the average height of the island-shaped unit is 0.3 - 3 nm; Optionally, the average diameter of the island-shaped unit is 0.03 - 30 μm; Optionally, the interval between adjacent island-shaped units is 1 - 200 μm.

8. The preparation method of the composite electrode according to claim 6, characterized in that, Before the step of depositing the first metal vapor to form the first sub-seed layer, it further includes: Providing a first metal precursor; Depositing the first metal precursor to form a second sub-seed layer; The step of depositing the first metal vapor to form the first sub-seed layer includes: Introducing the first metal vapor to deposit a first sub-seed layer on the second sub-seed layer; and / or, before the step of obtaining the seed layer, it further includes: Providing a second metal precursor; Depositing the second metal precursor on the first sub-seed layer to form a third sub-seed layer.

9. The preparation method of the composite electrode according to claim 8, characterized in that, The first metal precursor and the second metal precursor are each independently selected from at least one of aluminum acetylacetonate, dimethylaluminum amide, triisobutylaluminum, triethylaluminum, trimethylaluminum, molybdenum hexafluoride, molybdenum hexacarbonyl, copper perfluoropyruvate, copper acetylacetonate, tetramethylgermanium, diethylzinc, zinc ethoxide, titanium tetrapyruvate, pentaacetyl compound, vanadium succinate, tungsten hexacarbonyl, triisopropylaluminum, and trimethylgallium; and / or, The materials of the first metal precursor and the second metal precursor are the same; and / or, The thickness of the second sub-seed layer is 0.3 - 20 nm; and / or, The thickness of the third sub-seed layer is greater than or equal to the thickness of the first sub-seed layer; The thickness of the third sub-seed layer is 0.3 - 5 nm; and / or, The sheet resistance of the second sub-seed layer is 0.1 - 100 Ω / sq; and / or, The sheet resistance of the third sub-seed layer is 0.1 - 100 Ω / sq; and / or, The mobility of the second sub-seed layer is 5 to 400 cm 2 / (V·s); and / or, The mobility of the third sub-seed layer is 5 to 400 cm 2 / (V·s).

10. The preparation method of the composite electrode according to any one of claims 6 to 9, characterized in that, The step of depositing a conductive layer on the seed layer includes: Providing a second metal vapor; Introducing the second metal vapor to deposit a conductive layer on the seed layer; Optionally, the second metal vapor is selected from at least one of silver vapor, gold vapor, aluminum vapor, copper vapor, and platinum vapor; Optionally, the metal material in the second metal vapor is the same as that in the first metal vapor; Optionally, the thickness of the conductive layer is 18 - 25 nm.

11. The preparation method of the composite electrode according to any one of claims 6 to 9, characterized in that, Before the step of obtaining the composite electrode, it further includes: Providing a third metal precursor; Depositing the third metal precursor on the conductive layer to form a dielectric layer; Optionally, the thickness of the dielectric layer is 10 - 100 nm; Optionally, the transmittance of the dielectric layer is 80 - 100%; Optionally, the refractive index of the dielectric layer is 1.7 - 2.

5.

12. An optoelectronic device, characterized in that, Including a first electrode and a second electrode arranged in a stacked manner; The first electrode and / or the second electrode includes a composite electrode, which is the composite electrode according to any one of claims 1 to 5, or is prepared by using the preparation method of the composite electrode according to any one of claims 6 to 11.

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